Solar cell module and preparation method and device thereof

Abstract

The invention provides a solar cell module and a preparation method and device thereof. The preparation method at least comprises the following steps: S1, dividing a reserved P2 area and a semiconductor coating area on the surface of a bottom electrode provided with a P1 wire slot in a penetrating manner; s2, the reserved P2 area is coated with nano-particle turbid liquid, and a discontinuous lyophobic part of the island-shaped nano lattice structure is formed after drying; s3, the semiconductor coating area is coated with a semiconductor solution, a semiconductor film layer is formed after drying, and the semiconductor film layer forms a P2 wire groove in the reserved P2 area; s4, a top electrode is arranged on the surface of the semiconductor film layer, and the top electrode and the bottom electrode are communicated with each other through the P2 wire duct; s5, at least arranging a P3 wire slot for the top electrode in a penetrating manner; wherein the surface of the discontinuous lyophobic part and the surface of the semiconductor film layer have adaptability difference. According to the preparation method provided by the invention, a P2 wire slot setting procedure is not needed, the equipment cost is reduced, and the production efficiency is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of solar cells and relates to a solar cell assembly, in particular to a solar cell assembly and a preparation method and device thereof. Background Art

[0002] Currently, for large-scale solar cell modules, technicians generally use a slot-coating method to apply semiconductor liquid films. While this method can ensure uniformity across the entire surface of the ultra-thin film, due to the self-leveling properties of the film and the limitations of the coating knife's ability to control the liquid flow, it currently cannot achieve patterned semiconductor film coverage.

[0003] Currently, for solar cell modules larger than 1cm x 1cm, three laser lines (P1, P2, and P3) are typically used to create a series-connected cell structure. Laser P1 carves the bottom electrode, laser P2 carves the semiconductor layer, leaving space for the top and bottom electrodes to contact each other, and laser P3 carves the top electrode, creating a bow-shaped series cell structure.

[0004] However, the above preparation process requires multiple engraving steps, which has the problems of low production efficiency and high equipment cost. In addition, the semiconductor layer is easily sintered to form a cross-section during the laser P2 engraving process, and the cross-section will induce the decomposition and degradation of the semiconductor material, thereby affecting the power generation efficiency. At the same time, the sintering of the semiconductor layer will also affect the smooth preparation of the subsequent top electrode layer. Summary of the Invention

[0005] In view of the shortcomings of the existing technology, the purpose of the present invention is to provide a solar cell module and its preparation method and device, which do not require full coating of semiconductor solution. The P2 wire groove setting process is omitted by patterning the semiconductor film layer, thereby reducing equipment costs and improving production efficiency.

[0006] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a method for preparing a solar cell module, comprising at least the following steps:

[0008] S1. Divide the surface of the bottom electrode through which the P1 line groove is provided into a reserved P2 area and a semiconductor coating area, and the P1 line groove is located in the semiconductor coating area;

[0009] S2, coating the reserved P2 area with a nanoparticle suspension to form a discontinuous lyophobic portion of an island-like nano-lattice structure after drying;

[0010] S3, coating the semiconductor solution on the semiconductor coating area, forming a semiconductor film layer after drying, and the semiconductor film layer forms a P2 line groove in the reserved P2 area;

[0011] S4, disposing a top electrode on the surface of the semiconductor film layer, and the top electrode and the bottom electrode are electrically connected to each other through the P2 line groove;

[0012] S5. Provide a P3 wire groove at least through the top electrode.

[0013] There is a difference in adaptability between the surface energies of the discontinuous lyophobic portion and the semiconductor film layer.

[0014] The preparation method provided by the present invention utilizes the difference in surface energy adaptability between the discontinuous lyophobic portion and the semiconductor film layer to inhibit the semiconductor solution from extending into the reserved P2 area, thereby eliminating the need for full coating of the semiconductor solution. With the help of patterning of the semiconductor film layer, the P2 line groove setting process is omitted, thereby reducing equipment costs, shortening production cycles, and improving production efficiency.

[0015] In addition, the present invention adopts the idea of surface energy regulation to prepare P2 wire grooves, which effectively replaces traditional laser etching and has significant advantages in process simplification, cost control and performance improvement. Its innovation lies in breaking through the traditional path dependence of laser etching and introducing the discontinuous liquid-repellent part of the island-like nano-lattice structure into the semiconductor film layer to achieve patterning of the film layer. After all, in the preparation process of solar cell modules, laser etching (such as P1, P2, and P3 wire groove etching) is a mature technical means. Those skilled in the art usually solve the wire groove preparation problem from the perspective of "physical etching", but it is difficult to break the inertia of thinking and turn to the chemical / physical combination path of "surface energy regulation". The present invention provides a new technical idea for the preparation of P2 wire grooves.

[0016] As a preferred technical solution of the first aspect of the present invention, the surfaces of the discontinuous lyophobic portion and the semiconductor film layer can satisfy the following conditions:

[0017] The discontinuous lyophobic portion and the adjacent region of the semiconductor film layer can repel each other to form the distinct reserved P2 region and the semiconductor coating region.

[0018] And / or, setting the contact angle of the semiconductor solution in the discontinuous lyophobic portion to θ1, and setting the contact angle of the semiconductor solution in the semiconductor coating area to θ2, then satisfying: θ1>θ2, that is, the present invention increases the contact angle between the semiconductor solution and the discontinuous lyophobic portion, thereby worsening its wettability in the reserved P2 area, thereby effectively inhibiting the semiconductor solution from extending to the reserved P2 area, and ultimately omitting the P2 line groove setting process.

[0019] Wherein, the contact angle θ1 satisfies: 70°≤θ1≤90°, for example, it can be θ1=70°, 71°, 72°, 73°, 74°, 75°, 76°, 77°, 78°, 79°, 80°, 81°, 82°, 83°, 84°, 85°, 86°, 87°, 88°, 89° or 90°, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.

[0020] And / or, the contact angle θ2 satisfies: θ2≤20°, for example, it can be θ2=1°, 2°, 3°, 4°, 5°, 6°, 7°, 8°, 9°, 10°, 11°, 12°, 13°, 14°, 15°, 16°, 17°, 18°, 19° or 20°, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.

[0021] In the present invention, a larger contact angle indicates poorer wettability of the semiconductor solution at the corresponding interface. By rationally limiting the contact angle ranges of the semiconductor solution in the discontinuous lyophobic portion and the semiconductor coating area, the present invention effectively defines the semiconductor solution's extended area, reserving space for the formation of the P2 trench.

[0022] As a preferred technical solution of the first aspect of the present invention, the P1 wire trough in step S1, the P2 wire trough in step S3, and the P3 wire trough in step S5 are independently linear.

[0023] As a preferred technical solution of the first aspect of the present invention, the material of the nanoparticles in the nanoparticle suspension described in step S2 includes any one or a combination of at least two of metal oxides, small molecule organic matter or high molecular polymers. Typical but non-limiting combinations include a combination of metal oxides and small molecule organic matter, a combination of small molecule organic matter and high molecular polymers, a combination of metal oxides and high molecular polymers, or a combination of metal oxides, small molecule organic matter and high molecular polymers.

[0024] Wherein, the metal oxide includes SnO2 and / or TiO2; the small molecule organic matter includes stearic acid and / or oleic acid; and the high molecular polymer includes polyethyleneimine and / or polyimide.

[0025] And / or, the size of the nanoparticles in the nanoparticle suspension in step S2 is ≤200 nm, for example, it can be 20 nm, 40 nm, 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm or 200 nm, but is not limited to the listed values, and other unlisted values within this numerical range are also applicable.

[0026] And / or, the solvent in the nanoparticle suspension in step S2 is a volatile solvent.

[0027] And / or, the solvent in the nanoparticle suspension in step S2 includes ethanol and / or isopropanol.

[0028] In the present invention, the solvent used in the nanoparticle suspension can be a single solvent or multiple solvents. As long as the volatility function can be guaranteed, that is, the rapid formation of the discontinuous lyophobic portion can be achieved, the solvent composition is not particularly limited.

[0029] And / or, the concentration of the nanoparticle suspension in step S2 is ≤5 mg / mL, for example, it can be 0.5 mg / mL, 1 mg / mL, 1.5 mg / mL, 2 mg / mL, 2.5 mg / mL, 3 mg / mL, 3.5 mg / mL, 4 mg / mL, 4.5 mg / mL or 5 mg / mL, but is not limited to the listed values, and other values not listed within this numerical range are also applicable.

[0030] And / or, the semiconductor solution in step S3 includes a perovskite solution.

[0031] As a preferred technical solution of the first aspect of the present invention, the coating method in step S2 includes any one of piezoelectric inkjet coating, slit coating, electrostatic spraying, ultrasonic spraying, electrofluid spraying, screen printing or vapor deposition.

[0032] And / or, the drying method in step S2 includes air knife drying.

[0033] And / or, the P1 wire groove in step S1 and the P3 wire groove in step S5 are each independently provided by laser etching.

[0034] In a second aspect, the present invention provides a solar cell assembly comprising at least a stacked bottom electrode, a semiconductor film layer, and a top electrode; the bottom electrode is penetrated by a P1 wire groove, and the semiconductor film layer is filled in the P1 wire groove; the semiconductor film layer is penetrated by a P2 wire groove, and the bottom electrode and the top electrode are electrically connected to each other through the P2 wire groove; at least the top electrode is penetrated by a P3 wire groove.

[0035] The P2 slots are formed by means of a discontinuous lyophobic portion of an island-shaped nano-lattice structure, and there is a difference in adaptability between the discontinuous lyophobic portion and the surface energy of the semiconductor film layer.

[0036] As a preferred technical solution of the second aspect of the present invention, the surfaces of the discontinuous lyophobic portion and the semiconductor film layer can satisfy the following conditions:

[0037] The discontinuous lyophobic portion and the adjacent region of the semiconductor film layer can repel each other to form the distinct P2 line groove and the semiconductor film layer.

[0038] Specifically, the semiconductor solution required to form the semiconductor film layer meets the following conditions:

[0039] By setting the contact angle of the semiconductor solution in the discontinuous lyophobic portion to θ1 and the contact angle of the semiconductor solution in the corresponding area of the semiconductor film layer to θ2, it satisfies: θ1>θ2, that is, the present invention increases the contact angle between the semiconductor solution and the discontinuous lyophobic portion, thereby worsening the wettability of the semiconductor solution in the corresponding area of the P2 line groove, thereby effectively inhibiting the semiconductor solution from extending to this area, and ultimately omitting the P2 line groove setting process.

[0040] As a preferred technical solution of the second aspect of the present invention, the P1 wire trough, the P2 wire trough and the P3 wire trough are independently linear.

[0041] As a preferred technical solution of the second aspect of the present invention, the material of the nanoparticles in the discontinuous liquid-repellent portion includes any one or a combination of at least two of metal oxides, small molecule organic matter or high molecular polymers. Typical but non-limiting combinations include a combination of metal oxides and small molecule organic matter, a combination of small molecule organic matter and high molecular polymers, a combination of metal oxides and high molecular polymers, or a combination of metal oxides, small molecule organic matter and high molecular polymers.

[0042] Wherein, the metal oxide includes SnO2 and / or TiO2; the small molecule organic matter includes stearic acid and / or oleic acid; and the high molecular polymer includes chitosan and / or polystyrene.

[0043] And / or, the size of the nanoparticles in the discontinuous liquid-repellent portion is ≤200 nm, for example, it can be 20 nm, 40 nm, 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm or 200 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.

[0044] And / or, the semiconductor film layer includes a perovskite film layer.

[0045] In a third aspect, the present invention provides an apparatus for preparing a solar cell module, comprising at least a carrier, a first coating assembly, and a second coating assembly; the carrier is used to fix a bottom electrode, the surface of the bottom electrode being divided into a reserved P2 area and a semiconductor coating area; the first coating assembly is used to coat a nanoparticle suspension on the reserved P2 area to form a discontinuous liquid-repellent portion of an island-like nano-lattice structure; the second coating assembly is used to coat a semiconductor solution on the semiconductor coating area to form a semiconductor film layer.

[0046] As a preferred technical solution of the third aspect of the present invention, a substrate is stacked on a surface of the bottom electrode close to the carrier, and the substrate is directly fixed to the surface of the carrier.

[0047] And / or, the first coating assembly includes a first liquid storage box and a first nozzle that are interconnected, the first liquid storage box is used to store the nanoparticle suspension, and the first nozzle is used to coat the nanoparticle suspension along a preset trajectory.

[0048] And / or, the second coating assembly includes a second liquid storage box and a second nozzle that are interconnected, the second liquid storage box is used to store the semiconductor solution, and the second nozzle is used to coat the semiconductor solution along a preset trajectory.

[0049] And / or, an air knife is provided between the first coating assembly and the second coating assembly for drying the nanoparticle suspension.

[0050] Compared with the prior art, the present invention has the following beneficial effects:

[0051] The preparation method provided by the present invention utilizes the difference in surface energy adaptability between the discontinuous lyophobic portion and the semiconductor film layer to inhibit the semiconductor solution from extending into the reserved P2 area, thereby eliminating the need for full coating of the semiconductor solution. With the help of patterning of the semiconductor film layer, the P2 line groove setting process is omitted, thereby reducing equipment costs, shortening production cycles, and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 This is a flow chart of the method for preparing a solar cell module provided by the present invention;

[0053] Figure 2 is a schematic cross-sectional view of a solar cell assembly provided by the present invention;

[0054] Figure 3 is a top view of the solar cell assembly provided by the present invention;

[0055] Figure 4 This is a schematic diagram of the preparation process of the solar cell module provided by the present invention;

[0056] Figure 5 Schematic diagram of the contact angle θ1 of the perovskite solution on the discontinuous lyophobic portion in the present invention;

[0057] Figure 6 Schematic diagram of the contact angle θ2 of the perovskite solution in the semiconductor coating area in the present invention;

[0058] Figure 7 It is a partial schematic diagram of the device used for preparing solar cell modules of the present invention.

[0059] Among them: 10-bottom electrode; 11-P1 line groove; 20-perovskite film layer; 21-P2 line groove; 22-discontinuous liquid-repellent portion; 23-perovskite solution; 30-top electrode; 31-P3 line groove; 40-substrate; 51-first nozzle; 52-second nozzle; 53-air knife. DETAILED DESCRIPTION

[0060] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0061] Example 1

[0062] This embodiment provides a solar cell assembly and a method for preparing the same. Figure 2 As shown, the solar cell assembly includes a stacked substrate 40, a bottom electrode 10, a perovskite film layer 20, and a top electrode 30. The bottom electrode 10 is penetrated by a P1 wire groove 11, and the perovskite film layer 20 is filled in the P1 wire groove 11; the perovskite film layer 20 is penetrated by a P2 wire groove 21, and the bottom electrode 10 and the top electrode 30 are electrically connected to each other through the P2 wire groove 21; the perovskite film layer 20 and the top electrode 30 are penetrated by a P3 wire groove 31.

[0063] like Figure 4 As shown, the P2 slot 21 is formed by means of a discontinuous lyophobic portion 22 of an island-like nano-lattice structure, and there is a difference in adaptability between the surface energy of the discontinuous lyophobic portion 22 and the perovskite film layer 20; Figure 3 As shown, the P1 wire trough 11 , the P2 wire trough 21 and the P3 wire trough 31 are independently linear.

[0064] like Figure 1 and Figure 4 As shown, the method for preparing the solar cell assembly includes the following steps:

[0065] S1, divide the surface of the bottom electrode 10 with the P1 line groove 11 into a reserved P2 area and a semiconductor coating area ( Figure 4 (not shown), and the P1 line slot 11 is located in the semiconductor coating area;

[0066] S2, coating the reserved P2 area with a nanoparticle suspension to form a discontinuous lyophobic portion 22 with an island-like nano-lattice structure after drying;

[0067] S3, coating the semiconductor coating area with a perovskite solution 23, and forming a perovskite film layer 20 after drying, and the perovskite film layer 20 forms a P2 line groove 21 in the reserved P2 area;

[0068] S4, disposing a top electrode 30 on the surface of the perovskite film layer 20, and the top electrode 30 and the bottom electrode 10 are electrically connected to each other through the P2 line groove 21;

[0069] S5 , providing a P3 line groove 31 through the perovskite film layer 20 and the top electrode 30 .

[0070] Among them, the setting methods of the P1 wire groove 11 in step S1 and the P3 wire groove 31 in step S5 are both laser etching; the nanoparticle material in the nanoparticle suspension in step S2 is SnO2, the average size is 185nm, the solvent is ethanol, and the concentration is 0.98mg / mL; the coating methods in step S2 and step S3 are both piezoelectric inkjet coating; the drying in step S2 is air knife drying; the drying in step S3 is natural air drying.

[0071] The contact angle tester shows that the contact angle θ1 of the perovskite solution 23 on the discontinuous lyophobic portion 22 is 84° (see Figure 5 ), the contact angle of the perovskite solution 23 in the semiconductor coating area is θ2=8° (see Figure 6 ).

[0072] In this embodiment, the material and thickness of the substrate 40, the bottom electrode 10, and the top electrode 30 have no significant effect on the formation of the P2 line groove 21. As long as the wettability of the perovskite solution 23 and the relevant interface meets the above conditions, the above condition parameters are not specifically explained here.

[0073] Example 2

[0074] This embodiment provides a solar cell assembly and a method for preparing the same. Figure 2 As shown, the solar cell assembly includes a stacked substrate 40, a bottom electrode 10, a perovskite film layer 20, and a top electrode 30. The bottom electrode 10 is penetrated by a P1 wire groove 11, and the perovskite film layer 20 is filled in the P1 wire groove 11; the perovskite film layer 20 is penetrated by a P2 wire groove 21, and the bottom electrode 10 and the top electrode 30 are electrically connected to each other through the P2 wire groove 21; the perovskite film layer 20 and the top electrode 30 are penetrated by a P3 wire groove 31.

[0075] like Figure 4 As shown, the P2 slot 21 is formed by means of a discontinuous lyophobic portion 22 of an island-like nano-lattice structure, and there is a difference in adaptability between the surface energy of the discontinuous lyophobic portion 22 and the perovskite film layer 20; Figure 3 As shown, the P1 wire trough 11 , the P2 wire trough 21 and the P3 wire trough 31 are independently linear.

[0076] like Figure 1 and Figure 4 As shown, the method for preparing the solar cell assembly includes the following steps:

[0077] S1, divide the surface of the bottom electrode 10 with the P1 line groove 11 into a reserved P2 area and a semiconductor coating area ( Figure 4 (not shown), and the P1 line slot 11 is located in the semiconductor coating area;

[0078] S2, coating the reserved P2 area with a nanoparticle suspension to form a discontinuous lyophobic portion 22 with an island-like nano-lattice structure after drying;

[0079] S3, coating the semiconductor coating area with a perovskite solution 23, and forming a perovskite film layer 20 after drying, and the perovskite film layer 20 forms a P2 line groove 21 in the reserved P2 area;

[0080] S4, disposing a top electrode 30 on the surface of the perovskite film layer 20, and the top electrode 30 and the bottom electrode 10 are electrically connected to each other through the P2 line groove 21;

[0081] S5 , providing a P3 line groove 31 through the perovskite film layer 20 and the top electrode 30 .

[0082] Among them, the setting method of the P1 wire groove 11 in step S1 and the P3 wire groove 31 in step S5 are both laser etching; the nanoparticle material in the nanoparticle suspension in step S2 is TiO2, the average size is 180nm, the solvent is isopropyl alcohol, and the concentration is 0.91mg / mL; the coating method in step S2 and step S3 is piezoelectric inkjet coating; the drying in step S2 is air knife drying; the drying in step S3 is natural air drying.

[0083] The contact angle tester shows that the contact angle θ1 of the perovskite solution 23 on the discontinuous lyophobic portion 22 is 78° (see Figure 5 ), the contact angle of the perovskite solution 23 in the semiconductor coating area is θ2=6° (see Figure 6 ).

[0084] In this embodiment, the material and thickness of the substrate 40, the bottom electrode 10, and the top electrode 30 have no significant effect on the formation of the P2 line groove 21. As long as the wettability of the perovskite solution 23 and the relevant interface meets the above conditions, the above condition parameters are not specifically explained here.

[0085] Example 3

[0086] This embodiment provides an apparatus for preparing a solar cell module, comprising a carrier, a first coating assembly, and a second coating assembly. The carrier is used to secure a substrate 40, and a bottom electrode 10 is provided on the surface of the substrate 40. The surface of the bottom electrode 10 is divided into a reserved P2 region and a semiconductor coating region. The first coating assembly is used to apply a nanoparticle suspension to the reserved P2 region to form a discontinuous lyophobic portion 22 of an island-like nanolattice structure. The second coating assembly is used to apply a perovskite solution 23 to the semiconductor coating region to form a perovskite film layer 20.

[0087] like Figure 7 As shown, the first coating component includes a first liquid storage box (not shown in the figure) and a first nozzle 51 that are interconnected. The first liquid storage box is used to store the nanoparticle suspension, and the first nozzle 51 is used to coat the nanoparticle suspension along a preset trajectory; the second coating component includes a second liquid storage box (not shown in the figure) and a second nozzle 52 that are interconnected. The second liquid storage box is used to store the perovskite solution 23, and the second nozzle 52 is used to coat the perovskite solution 23 along a preset trajectory; an air knife 53 is provided between the first coating component and the second coating component for drying the nanoparticle suspension.

[0088] It can be seen that the preparation method provided by the present invention utilizes the difference in surface energy adaptability between the discontinuous lyophobic portion and the semiconductor film layer to inhibit the semiconductor solution from extending to the reserved P2 area, thereby eliminating the need for full coating of the semiconductor solution. With the help of patterning of the semiconductor film layer, the P2 line groove setting process is omitted, thereby reducing equipment costs, reducing production cycle, and improving production efficiency.

[0089] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for preparing a solar cell module, characterized in that: The preparation method comprises at least the following steps: S1. Divide the surface of the bottom electrode through which the P1 line groove is provided into a reserved P2 area and a semiconductor coating area, and the P1 line groove is located in the semiconductor coating area; S2, coating the reserved P2 area with a nanoparticle suspension to form a discontinuous lyophobic portion of an island-like nano-lattice structure after drying; S3, coating the semiconductor solution on the semiconductor coating area, forming a semiconductor film layer after drying, and the semiconductor film layer forms a P2 line groove in the reserved P2 area; S4, disposing a top electrode on the surface of the semiconductor film layer, and the top electrode and the bottom electrode are electrically connected to each other through the P2 line groove; S5. Setting a P3 wire groove through at least the top electrode; There is a difference in adaptability between the surface energies of the discontinuous lyophobic portion and the semiconductor film layer.

2. The method for preparing a solar cell assembly according to claim 1, wherein: The surfaces of the discontinuous lyophobic portion and the semiconductor film layer can satisfy the following conditions: The discontinuous lyophobic portion and the adjacent area of the semiconductor film layer can repel each other to form the distinguished reserved P2 area and the semiconductor coating area; And / or, setting the contact angle of the semiconductor solution in the discontinuous lyophobic portion to θ1 and setting the contact angle of the semiconductor solution in the semiconductor coating region to θ2, then: θ1>θ2; Wherein, the contact angle θ1 satisfies: 70°≤θ1≤90°; And / or, the contact angle θ2 satisfies: θ2≤20°.

3. The method for preparing a solar cell assembly according to claim 1 or 2, characterized in that: The P1 wire trough, the P2 wire trough, and the P3 wire trough are independently linear.

4. The method for preparing a solar cell assembly according to claim 1 or 2, characterized in that: The nanoparticles in the nanoparticle suspension in step S2 are made of any one of metal oxides, small molecule organic matter, or high molecular polymers, or a combination of at least two thereof; Wherein, the metal oxide includes SnO2 and / or TiO2; and / or, the size of the nanoparticles in the nanoparticle suspension in step S2 is ≤ 200 nm; and / or, the solvent in the nanoparticle suspension in step S2 is a volatile solvent; And / or, the solvent in the nanoparticle suspension in step S2 includes ethanol and / or isopropanol; and / or, the concentration of the nanoparticle suspension in step S2 is ≤5 mg / mL; And / or, the semiconductor solution in step S3 includes a perovskite solution.

5. The method for preparing a solar cell assembly according to claim 1 or 2, characterized in that: The coating method in step S2 includes any one of piezoelectric inkjet coating, slit coating, electrostatic spraying, ultrasonic spraying, electrofluid spraying, screen printing or vapor deposition; And / or, the drying method in step S2 includes air knife drying; And / or, the P1 wire groove in step S1 and the P3 wire groove in step S5 are each independently provided by laser etching.

6. A solar cell module, characterized in that: The solar cell assembly at least comprises a bottom electrode, a semiconductor film layer and a top electrode which are stacked; The bottom electrode is provided with a P1 line groove through it, and the semiconductor film layer is filled in the P1 line groove; The semiconductor film layer is provided with a P2 line groove, and the bottom electrode and the top electrode are connected to each other through the P2 line groove; At least the top electrode is provided with a P3 line groove; The P2 slots are formed by means of a discontinuous lyophobic portion of an island-shaped nano-lattice structure, and there is a difference in adaptability between the discontinuous lyophobic portion and the surface energy of the semiconductor film layer.

7. The solar cell assembly according to claim 6, characterized in that: The surfaces of the discontinuous lyophobic portion and the semiconductor film layer can meet the following conditions: the adjacent areas of the discontinuous lyophobic portion and the semiconductor film layer can repel each other to form the distinct P2 line groove and the semiconductor film layer; And / or, the P1 wire trough, the P2 wire trough and the P3 wire trough are each independently linear.

8. The solar cell assembly according to claim 6 or 7, characterized in that: The nanoparticles in the discontinuous lyophobic portion are made of any one of metal oxides, small molecule organic matter, or high molecular polymers, or a combination of at least two thereof; Wherein, the metal oxide includes SnO2 and / or TiO2; and / or, the size of the nanoparticles in the discontinuous lyophobic portion is ≤200 nm; And / or, the semiconductor film layer includes a perovskite film layer.

9. A device for preparing a solar cell module, characterized in that: The device comprises at least a carrier, a first coating component and a second coating component; The carrier is used to fix the bottom electrode, and the surface of the bottom electrode is divided into a reserved P2 area and a semiconductor coating area; The first coating component is used to coat the nanoparticle suspension on the reserved P2 area to form a discontinuous lyophobic portion of an island-like nano-lattice structure; The second coating assembly is used to coat a semiconductor solution on the semiconductor coating area to form a semiconductor film layer.

10. The device for preparing a solar cell module according to claim 9, characterized in that: A substrate is stacked on a surface of the bottom electrode close to the carrier, and the substrate is directly fixed to the surface of the carrier; And / or, the first coating assembly includes a first liquid storage box and a first nozzle that are interconnected, the first liquid storage box is used to store the nanoparticle suspension, and the first nozzle is used to coat the nanoparticle suspension along a preset trajectory; And / or, the second coating assembly includes a second liquid storage box and a second nozzle that are interconnected, the second liquid storage box is used to store the semiconductor solution, and the second nozzle is used to coat the semiconductor solution along a preset trajectory; And / or, an air knife is provided between the first coating assembly and the second coating assembly for drying the nanoparticle suspension.

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