Silicon rod cutting method and cutting system

Abstract

The embodiment of the invention relates to the field of silicon rod cutting, and provides a silicon rod cutting method and system. The method comprises the steps that after a silicon rod is cut into silicon wafers and before material lifting, a cutting line is controlled to be arranged at a first preset speed, and a spraying mechanism is controlled to be started to spray lubricating liquid to the cutting line; the spraying mechanism is controlled to be closed, material lifting operation is started to be executed, the cutting line is controlled to run at a second preset speed in the material lifting process, and the second preset speed is larger than the first preset speed; the actual material lifting torque and the maximum line bow value in the material lifting process are obtained, the actual material lifting torque is the torsional moment for enabling the silicon wafer to move in the direction away from the cutting line in the material lifting process, and the maximum line bow value is the maximum deformation amount of the cutting line in the moving direction of the silicon wafer; and according to the maximum wire bow value and the actual material lifting torque, the working state of the spraying mechanism in the material lifting process is controlled. The invention is at least beneficial to improving the cutting line hanging problem of the silicon rod.

Description

Technical Field

[0001] The present application relates to the field of silicon rod cutting, and in particular to a silicon rod cutting method and a cutting system. Background Art

[0002] The silicon ingot cutting process is a critical step in solar production. During the process, after the ingots are cut through, the wire mesh often becomes snagged during the ingot lifting process. This means that one or more wires can become snagged on the plastic sheet, adhesive layer, or silicon wafers. This can easily damage the wafers and break the wires, resulting in wire loss. This also forces operators to re-lay the wire mesh, wasting time and reducing production capacity. Summary of the Invention

[0003] The embodiments of the present application provide a silicon rod cutting method and a cutting system, which at least help to improve the problem of silicon rod hanging during cutting.

[0004] According to some embodiments of the present application, on the one hand, the embodiments of the present application provide a method for cutting silicon rods, comprising: after cutting the silicon rods into silicon wafers and before lifting the material, controlling the cutting line to move at a first preset speed, and controlling the spray mechanism to open to spray lubricating liquid onto the cutting line; controlling the spray mechanism to close and starting the lifting operation, and controlling the cutting line to move at a second preset speed during the lifting process, the second preset speed being greater than the first preset speed; obtaining the actual lifting torque and the maximum line bow value during the lifting process, the actual lifting torque being the torsional torque that causes the silicon wafer to move away from the cutting line during the lifting process, and the maximum line bow value being the maximum deformation of the cutting line in the moving direction of the silicon wafer; controlling the working state of the spray mechanism during the lifting process according to the maximum line bow value and the actual lifting torque.

[0005] In some embodiments, the working state of the spray mechanism during the lifting process is controlled according to the maximum line bow value and the actual lifting torque, including: determining the friction coefficient of the cutting line according to the maximum line bow value and the actual lifting torque; when the friction coefficient is greater than a first threshold and less than or equal to a second threshold, controlling the spray mechanism to open to spray the lubricating fluid to the cutting line; when the friction coefficient is greater than the second threshold, at least stopping the lifting operation and controlling the spray mechanism to open to spray the lubricating fluid to the cutting line; when the friction coefficient is less than or equal to a third threshold, controlling the spray mechanism to close, and the third threshold is less than or equal to the first threshold.

[0006] In some embodiments, when the friction coefficient is greater than the second threshold value, at least the material lifting operation is stopped and the spraying mechanism is controlled to open to spray the lubricating fluid onto the cutting line, including: when the friction coefficient is greater than the second threshold value, the material lifting operation is stopped, the cutting line is controlled to move at a third preset speed and the spraying mechanism is opened so that the spraying mechanism sprays the lubricating fluid onto the cutting edge of the cutting line, and the third preset speed is less than the second preset speed; when the opening time of the spraying mechanism reaches a first time length, the spraying mechanism is controlled to close, the material lifting operation is continued and the cutting line is controlled to move at the second preset speed.

[0007] In some embodiments, controlling the spray mechanism to close and starting the material lifting operation includes: when the time duration of the cutting line moving at the first preset speed reaches a second time duration, controlling the spray mechanism to close and starting the material lifting operation, the second time duration is greater than or equal to the first time duration, controlling the cutting line to move at the first preset speed, and controlling the spray mechanism to open to spray lubricating fluid to the cutting line, including: controlling the cutting line to move at the first preset speed and opening the spray mechanism, so as to control the spray mechanism to spray the lubricating fluid to the intersection position of the cutting line and the carrier, and the silicon rod is bonded to the carrier through the adhesive layer.

[0008] In some embodiments, the friction coefficient is determined based on the maximum line bow value and the actual lifting torque, including one of the following: based on the maximum line bow value and the actual lifting torque, the friction coefficient is determined as the quotient of the maximum line bow value and the actual lifting torque multiplied by a preset factor; the maximum line bow value and the actual lifting torque are input into a preset model so that the preset model outputs the friction coefficient, and the preset model is trained through machine learning using multiple sets of data, and each set of data in the multiple sets of data includes: historical maximum line bow value, historical lifting torque and historical friction coefficient; the friction coefficient is determined based on the maximum line bow value, the actual lifting torque and a preset relationship, and the preset relationship represents the correspondence between the maximum line bow value, the actual lifting torque and the friction coefficient.

[0009] In some embodiments, obtaining the actual lifting torque and the maximum line bow value during the lifting process includes: obtaining image information of the cutting line, and determining multiple deformation amounts of the cutting line in the moving direction of the silicon wafer based on the image information; determining the maximum value of the multiple deformation amounts as the maximum line bow value; and reading the torque value of the torque sensor on the lifting drive shaft to obtain the actual lifting torque.

[0010] In some embodiments, the silicon rod cutting method further includes: obtaining the maximum wire bow value during the cutting process of the silicon rod; when the maximum wire bow value is greater than a fourth threshold, performing at least one of the following: controlling the mortar mechanism to open to spray cutting fluid to the cutting wire and reducing the cutting torque.

[0011] In some embodiments, the first preset speed is 2-3 m / s.

[0012] In some embodiments, the first duration is greater than or equal to 1 minute, and the second duration is greater than or equal to 2 minutes.

[0013] According to some embodiments of the present application, another aspect of the embodiments of the present application provides a silicon rod cutting system, comprising: a silicon rod; a silicon rod cutting device, comprising a cutting line, a spray mechanism, one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include methods for executing any one of the silicon rod cutting methods.

[0014] The technical solution provided by the embodiment of the present application has at least the following advantages: before the silicon rod is lifted after being cut through, the cutting line is first controlled to run at a smaller first preset speed, and the spray mechanism is controlled to spray lubricating liquid onto the running cutting line; then, the lubricating liquid is stopped from being sprayed onto the cutting line, and the lifting operation is started, and the cutting line is controlled to run at a larger second preset speed during the lifting process; finally, the actual lifting torque and the maximum wire bow value of the cutting line during the lifting process are obtained, and the working state of the spray mechanism during the lifting process is controlled according to the two values obtained. The present application sprays lubricating liquid onto the cutting line and controls the cutting line to move slowly before lifting after cutting, so that the lubricating liquid can be brought into the carrier plate through the cutting line, thereby reducing the friction between the cutting line and the carrier plate and improving the wire hanging problem; during the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting line, the switch of the spray mechanism is controlled according to the two, so as to regulate the friction between the cutting line and the carrier plate, the adhesive layer or the wafer during the lifting process, which can further reduce the risk of the cutting line hanging during the lifting process. In addition, during the material lifting process, controlling the rapid movement of the cutting line can reduce adhesion with the carrier, adhesive layer or wafer, which is conducive to separating the cutting line from the silicon wafer and ensuring the smooth execution of the material lifting operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] One or more embodiments are exemplified by the figures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise stated, the figures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present application or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 A hardware structure block diagram of a mobile terminal for executing a silicon rod cutting method provided in an embodiment of the present application is shown;

[0017] Figure 2 A schematic flow chart of a silicon rod cutting method according to an embodiment of the present application is shown;

[0018] Figure 3 A schematic structural diagram of a spray mechanism provided according to an embodiment of the present application is shown;

[0019] Figure 4 A front view schematic diagram of a connection structure of a spray mechanism and a mortar mechanism provided according to an embodiment of the present application is shown;

[0020] Figure 5 A schematic back view of a connection structure between a spray mechanism and a mortar mechanism provided according to an embodiment of the present application is shown.

[0021] The accompanying drawings include the following reference numerals:

[0022] 102. Processor; 104. Memory; 106. Transmission device; 108. Input / output device; 10. Spray pipe; 11. Liquid inlet pipe; 12. Fixing component; 13. Limiting component; 14. Nozzle; 15. Mortar mechanism; 16. Mortar pipe. DETAILED DESCRIPTION

[0023] As can be seen from the background art, after a silicon rod is cut into wafers, it is necessary to lift the material, that is, to separate the silicon wafers from the wire mesh. During the lifting process, the wire mesh can easily get caught on the carrier board, adhesive layer, or wafer, resulting in wire snags, causing problems such as silicon wafer strain or wire mesh snags. To address the problems of silicon wafer strain and wire mesh snags caused by wire snags, embodiments of the present application provide a silicon rod cutting method and cutting system.

[0024] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0025] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0026] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0027] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0028] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0029] In the description of the embodiments of the present application, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connect," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and they can refer to internal connectivity between two components or interaction between two components. Those skilled in the art can understand the specific meanings of these terms in the embodiments of the present application based on specific circumstances.

[0030] In the accompanying drawings corresponding to the embodiments of the present application, the thickness and area of the layers are exaggerated for better understanding and ease of description. When describing a component (such as a layer, film, region or substrate) on another component or on the surface of another component, the component can be "directly" located on the surface of the other component, or there can be a third component between the two components. On the contrary, when describing a component on the surface of another component or when another component is formed or provided on the surface of a component, it means that there is no third component between the two components. In addition, when describing a component as "approximately" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a partial edge of the entire surface.

[0031] In the description of the embodiments of the present application, when a component "includes" another component, unless otherwise specified, other components are not excluded, and other components may be further included. In addition, when a component such as a layer, film, region, or plate is referred to as being "on / located on" another component, it can be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or another component may be present between it. In addition, when a component such as a layer, film, region, or plate is "directly located on" another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it means that no other components are located between it.

[0032] The terms used herein in the description of the various embodiments are intended only to describe the specific embodiments and are not intended to be limiting. As used in the description of the various embodiments and the appended claims, "part" is intended to include the plural form unless the context clearly indicates otherwise. A component includes a layer, film, region, or plate.

[0033] The following detailed description of the various embodiments of the present application is provided in conjunction with the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in the various embodiments of the present application to facilitate a better understanding of the present application. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the present application can still be implemented.

[0034] The method embodiments provided in the embodiments of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device. Taking running on a mobile terminal as an example, Figure 1 FIG1 is a hardware structure block diagram of a mobile terminal for a silicon rod cutting method according to an embodiment of the present invention. As shown in FIG1 , the mobile terminal may include one or more ( Figure 1Only one is shown) a processor 102 (the processor 102 may include but is not limited to a microprocessor MCU or a programmable logic device FPGA and other processing devices) and a memory 104 for storing data, wherein the mobile terminal may also include a transmission device 106 and an input and output device 108 for communication functions. It will be understood by those skilled in the art that Figure 1 The structure shown is only for illustration and does not limit the structure of the mobile terminal. Figure 1 More or fewer components than shown, or with Figure 1 Different configurations shown.

[0035] The memory 104 can be used to store computer programs, such as software programs and modules of application software, such as the computer program corresponding to the silicon rod cutting method in the embodiment of the present invention. The processor 102 executes the computer programs stored in the memory 104 to perform various functional applications and data processing, thereby implementing the described method. The memory 104 may include high-speed random access memory and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include memory remotely located relative to the processor 102, and these remote memories may be connected to the mobile terminal via a network. Examples of such networks include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof. The transmission device 106 is used to receive or transmit data via a network. Specific examples of such networks may include a wireless network provided by the mobile terminal's telecommunications provider. In one example, the transmission device 106 includes a network interface controller (NIC), which can be connected to other network devices via a base station to enable communication with the Internet. In one example, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0036] In this embodiment, a method for cutting silicon rods that runs on a mobile terminal, a computer terminal, or a similar computing device is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0037] Figure 2 FIG. 1 is a flow chart of a method for cutting a silicon rod according to an embodiment of the present application. Figure 2 As shown, the method includes the following steps:

[0038] Step S201, after the silicon rod is cut into silicon wafers and before the wafers are removed, controlling the cutting line to move at a first preset speed, and controlling the spray mechanism to start to spray lubricating liquid onto the cutting line;

[0039] For example, during the silicon rod cutting process, the upper surface of the silicon rod is bonded to the lower surface of the carrier by an adhesive layer, and the cutting line cuts the silicon rod from bottom to top until the cutting line cuts into the carrier, cutting through the silicon rod and forming multiple silicon wafers. Lifting is the process of lifting the carrier so that the carrier moves with the silicon wafer so that the silicon wafer is separated from the wire mesh. While the cutting line is moving at a first preset speed, a lubricating liquid is sprayed onto the cutting line so that the cutting line brings the lubricating liquid into the carrier. The cutting line moving at the first preset speed reciprocates in a predetermined direction, which is perpendicular to the moving direction of the silicon wafer. For example, when the moving direction of the silicon wafer is from bottom to top, the predetermined direction is a horizontal direction.

[0040] Step S202, controlling the spray mechanism to close and starting the material lifting operation, during which the cutting line is controlled to move at a second preset speed, which is greater than the first preset speed;

[0041] Exemplarily, the cutting wire moving at the second preset speed reciprocates along the predetermined direction.

[0042] Step S203, obtaining an actual lifting torque and a maximum wire bow value during the lifting process, wherein the actual lifting torque is a torsional moment that causes the silicon wafer to move away from the cutting line during the lifting process, and the maximum wire bow value is a maximum deformation of the cutting line in the moving direction of the silicon wafer;

[0043] Specifically, the actual lifting torque is the torque generated by the various resistances that the lifting mechanism must overcome to lift the cut silicon wafer. During the lifting process, the friction between the cutting wire and the carrier, adhesive layer, and silicon wafer causes the cutting wire to deform. The maximum deformation in the direction of silicon wafer movement is the maximum wire bow value.

[0044] Step S204: controlling the working state of the spray mechanism during the material lifting process according to the maximum line bow value and the actual material lifting torque.

[0045] Specifically, the spray mechanism has two operating states: on and off. When the spray mechanism is on, the spray mechanism sprays lubricating liquid onto the cutting line during the material feeding process, and the lubricating liquid can be carried into the carrier plate, the adhesive layer, and the silicon wafer through the cutting line. When the spray mechanism is off, no lubricating liquid is sprayed.

[0046] Through the embodiment, before the silicon rod is lifted after being cut through, the cutting line is first controlled to move at a smaller first preset speed, and the spray mechanism is controlled to spray lubricating liquid onto the moving cutting line; then, the lubricating liquid is stopped from being sprayed onto the cutting line, and the lifting operation is started, and the cutting line is controlled to move at a larger second preset speed during the lifting process; finally, the actual lifting torque and the maximum wire bow value of the cutting line during the lifting process are obtained, and the working state of the spray mechanism during the lifting process is controlled according to the two values obtained. The present application sprays lubricating liquid onto the cutting line and controls the cutting line to move slowly before lifting the material after cutting, and can bring the lubricating liquid into the carrier plate through the cutting line, thereby reducing the friction between the cutting line and the carrier plate and improving the problem of hanging wire; during the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting line, the switch of the spray mechanism is controlled according to the two, so as to regulate the friction between the cutting line and the carrier plate, the glue layer or the wafer during the lifting process, and can further reduce the risk of the cutting line hanging during the lifting process. In addition, during the material lifting process, controlling the rapid movement of the cutting line can reduce adhesion with the carrier, adhesive layer or wafer, which is conducive to separating the cutting line from the silicon wafer and ensuring the smooth execution of the material lifting operation.

[0047] In some embodiments, the first preset speed is 2 to 3 m / s. For example, the first preset speed can be 2 m / s, 2.3 m / s, 2.5 m / s, 2.7 m / s, or 3 m / s. This speed range is determined based on the characteristics of the cutting wire and the performance of the lubricant. When the cutting wire is moved at the first preset speed, the cutting wire (such as a diamond wire) has a good ability to carry liquid, and 70% to 80% of the lubricant on the cutting wire can enter the carrier plate as the cutting wire moves. In some embodiments, the lubricant can be a cutting fluid or other liquid that can act as a lubricant.

[0048] Illustratively, controlling the spray mechanism to open to spray the lubricating liquid onto the cutting line may include: controlling the spray mechanism to open to spray the lubricating liquid onto the cutting line at a spray flow rate of 200 to 300 mL / min.

[0049] According to some embodiments of the present application, the actual lifting torque can be obtained by testing a torque sensor installed between the drive motor and the transmission component of the lifting mechanism; the actual lifting torque can also be estimated based on parameters such as the current or voltage of the drive motor, combined with the motor's characteristic curve and mechanical formula. For example, since the output torque of the motor is proportional to the current, the actual lifting torque can be calculated using the motor's actual current, rated torque, and rated current. The maximum wire bow value can be obtained by measuring the displacement change of the cutting wire during the routing process using a non-contact measuring device.

[0050] In some embodiments, step S204: controlling the working state of the spray mechanism during the material lifting process according to the maximum line bow value and the actual material lifting torque, includes:

[0051] Step S2041: determining the friction coefficient of the cutting line according to the maximum wire bow value and the actual material lifting torque;

[0052] Specifically, the friction coefficient represents a parameter representing the magnitude of the friction force between the cutting line and the carrier, the adhesive layer or the silicon wafer during the material lifting process.

[0053] Step S2042: When the friction coefficient is greater than a first threshold value and less than or equal to a second threshold value, controlling the spray mechanism to start so as to spray the lubricating liquid onto the cutting line;

[0054] Specifically, when it is determined that the friction coefficient of the cutting line during the material lifting process is greater than the first threshold and not greater than the second threshold, it means that the friction between the cutting line and the carrier, glue layer or silicon wafer is large at this time, and there is a risk of hanging the line. At this time, the spray mechanism is controlled to spray lubricating liquid onto the cutting line, and the lubricating liquid is brought into the carrier, glue layer or silicon wafer through the routing of the cutting line.

[0055] Step S2043: when the friction coefficient is greater than the second threshold, at least stop the material lifting operation and control the spraying mechanism to start so as to spray the lubricating liquid onto the cutting line;

[0056] Specifically, when it is determined that the friction coefficient of the cutting line during the lifting process is greater than the second threshold, it means that the friction between the cutting line and the carrier, glue layer or silicon wafer is greater than that in step S2042, and the risk of hanging the line is greater. At this time, at least stop the lifting operation, that is, stop the lifting operation of the carrier, so that the silicon wafer no longer moves.

[0057] Step S2044: When the friction coefficient is less than or equal to a third threshold, controlling the spray mechanism to be closed, and the third threshold is less than or equal to the first threshold.

[0058] Specifically, when it is determined that the friction coefficient of the cutting line during the material lifting process is not greater than the third threshold, it means that the friction between the cutting line and the carrier, glue layer or silicon wafer is small, and the risk of hanging the line is small. At this time, lubricating liquid is no longer sprayed on the cutting line.

[0059] In the embodiment, the friction coefficient is calculated based on the maximum wire bow value and the actual material lifting torque. This parameter can reflect the force and deformation degree of the cutting wire during the material lifting process. When the friction coefficient is within a specific range, the spray mechanism is turned on in time to increase the supply of lubricating fluid, which can effectively reduce the direct contact between the cutting wire and the carrier, glue layer or silicon wafer, reduce friction, further improve the wire hanging problem, and further protect the silicon wafer from damage during the material lifting process; if the friction coefficient is abnormally high, the material lifting is immediately stopped and the lubricating fluid spray is increased at least until the friction coefficient returns to normal before continuing the material lifting, further avoiding the risk of cutting wire breakage caused by excessive friction; on the contrary, if the friction coefficient is low, indicating that the current wire hanging risk is low, the spray mechanism is turned off at this time, which can save lubricating fluid and reduce the cost of the cutting process. This intelligent control strategy of the present embodiment can more accurately control the friction state between the cutting wire and the carrier, glue layer or silicon wafer, thereby further optimizing the cutting process and significantly improving cutting quality and production efficiency.

[0060] In some embodiments, the first threshold may be greater than or equal to 0.12, the second threshold may be greater than or equal to 0.15, and the third threshold may be less than or equal to 0.1.

[0061] In some other embodiments, when the friction coefficient is greater than the second threshold, at least the material lifting operation is stopped and the spray mechanism is controlled to be turned on to spray the lubricant onto the cutting line, including: when the friction coefficient is greater than the second threshold, the material lifting operation is stopped, the cutting line is controlled to run at a third preset speed, and the spray mechanism is turned on so that the spray mechanism sprays the lubricant onto the cutting line's entry point, the third preset speed being less than the second preset speed; when the spray mechanism is turned on for a first time, the spray mechanism is controlled to be turned off, the material lifting operation is continued, and the cutting line is controlled to run at the second preset speed. In this embodiment, when it is detected that the friction coefficient is abnormally increased and exceeds the set second threshold, the material lifting operation is stopped and the running speed of the cutting line is reduced to the third preset speed (usually slower), while the lubricant spraying is increased, with a focus on the cutting line's entry point area, which is the area with the highest friction concentration and the highest probability of wire hanging during the cutting process. In this way, the friction coefficient can be quickly reduced in a short time, avoiding the problem of wire hanging or even breaking caused by the continued material lifting operation, and restoring normal working conditions between the cutting line and the silicon wafer. The set spraying time ensures sufficient lubrication time, after which the normal speed of the material feeding and cutting line is restored. This whole process not only further ensures the cutting quality, but also further avoids unnecessary downtime, further improving the continuity and stability of the production line.

[0062] In some embodiments, the third preset speed may be equal to the first preset speed, or may be any speed value that is not equal to the first preset speed and is less than the second preset speed.

[0063] According to some optional schemes of the present application, the spray mechanism is controlled to be closed and the material lifting operation is started, including: when the time duration of the cutting line moving at the first preset speed reaches a second time duration, the spray mechanism is controlled to be closed and the material lifting operation is started, the second time duration is greater than or equal to the first time duration, the cutting line is controlled to move at the first preset speed, and the spray mechanism is controlled to be turned on to spray lubricating liquid to the cutting line, including: controlling the cutting line to move at the first preset speed and turning on the spray mechanism, so as to control the spray mechanism to spray the lubricating liquid to the intersection position of the cutting line and the carrier, and the silicon rod is bonded to the carrier by the adhesive layer. In this embodiment, after the cutting line runs at a lower first preset speed for a period of time (i.e., the second time period), the spraying mechanism is turned off and the material lifting is started. This strategy ensures sufficient lubrication of the cutting line surface, which can reduce the initial friction when the cutting line contacts the carrier, glue layer or silicon wafer during the subsequent material lifting process; and since the probability of the cutting line hanging at the intersection of the cutting line and the carrier is high, the friction in this area can be effectively reduced by accurately spraying the lubricating liquid at the intersection of the cutting line and the carrier. In addition, spraying the lubricating liquid at the intersection of the cutting line and the carrier facilitates the introduction of the lubricating liquid into the carrier during the routing process of the cutting line, further ensuring a better lubrication effect, thereby further ensuring the smooth progress of the subsequent material lifting operation, further avoiding damage to the silicon wafer caused by instantaneous high friction and the risk of the cutting line hanging, and further improving the cutting yield and production efficiency.

[0064] In some further exemplary schemes, the friction coefficient is determined based on the maximum line bow value and the actual material lifting torque, including one of the following: determining the friction coefficient based on the maximum line bow value and the actual material lifting torque as the quotient of the maximum line bow value and the actual material lifting torque multiplied by a preset factor; inputting the maximum line bow value and the actual material lifting torque into a preset model so that the preset model outputs the friction coefficient, the preset model is trained through machine learning using multiple sets of data, each of the multiple sets of data including: historical maximum line bow values, historical material lifting torques, and historical friction coefficients; determining the friction coefficient based on the maximum line bow value, the actual material lifting torque, and a preset relationship, the preset relationship representing the corresponding relationship between the maximum line bow value, the actual material lifting torque, and the friction coefficient. This technical solution calculates the friction coefficient through multiple methods such as direct calculation, machine learning model prediction, and preset relationship mapping, providing a flexible and accurate means of friction state assessment. Specifically, the direct calculation method considers the combined effects of maximum wire bow, actual lifting torque, and empirical factors to rapidly determine the friction coefficient. The machine learning model, trained on extensive historical data, accurately predicts friction coefficient trends, particularly excelling in complex working conditions. Pre-set relationship mapping establishes intuitive friction coefficient estimation rules, facilitating rapid friction coefficient decision-making. These methods ensure real-time monitoring and intelligent control of the friction state between the cutting wire and the wafer, effectively avoiding production failures caused by friction anomalies, improving cutting accuracy and product quality, and providing data support for subsequent process optimization.

[0065] In some embodiments, obtaining the actual lifting torque and maximum wire bow value during the lifting process includes: acquiring image information of the cutting line, determining multiple deformations of the cutting line in the direction of movement of the silicon wafer based on the image information; determining the maximum value of the multiple deformations as the maximum wire bow value; and reading the torque value of a torque sensor on the lifting drive shaft to obtain the actual lifting torque. By collecting and analyzing the image information, the slight deformation of the cutting line in the direction of movement of the silicon wafer can be accurately captured, and the torque sensor can accurately measure the actual lifting torque of the drive shaft, facilitating the subsequent determination of a more accurate friction coefficient.

[0066] For example, the image information may be captured by a radar camera, collected by a laser scanning device, or detected by an infrared thermal imaging device. The radar camera, laser scanning device, or infrared thermal imaging device may be installed on the spray mechanism.

[0067] In other embodiments, the silicon rod cutting method further includes: obtaining the maximum wire bow value during the cutting process of the silicon rod; and when the maximum wire bow value is greater than a fourth threshold, performing at least one of the following: controlling the mortar mechanism to open to spray cutting fluid onto the cutting wire, or reducing the cutting torque. In addition to controlling the wire hanging during the material feeding stage, this embodiment also focuses on the wire bow deformation during the entire cutting process. When the monitored maximum wire bow value exceeds a set fourth threshold, the cutting parameters are automatically adjusted, such as increasing the spraying of cutting fluid and / or reducing the cutting torque, to address and avoid wire hanging during the cutting process.

[0068] In some embodiments, the mortar mechanism can be reused as a spray mechanism, and the cutting fluid can be reused as a lubricating fluid. In other embodiments, the mortar mechanism can also be provided separately from the spray mechanism, that is, the cutting device of the present application is provided with both a mortar mechanism for spraying cutting fluid onto the cutting line during the cutting process and a spray mechanism for spraying lubricating fluid onto the cutting line after cutting.

[0069] According to some embodiments of the present application, the first duration is greater than or equal to 1 minute, for example, the first duration may be 1 minute, 2 minutes, 3 minutes, or 5 minutes, etc. The second duration is greater than or equal to 2 minutes, for example, the second duration may be 2 minutes, 3 minutes, 4 minutes, 5 minutes, or 6 minutes.

[0070] In actual application, the specific values of the first preset speed, second preset speed routing, third preset speed, preset factor, first threshold, second threshold, third threshold, first duration and second duration mentioned in this application can be obtained through a limited number of experimental verifications, or can be determined based on empirical values.

[0071] The silicon rod cutting method of the present application will be described in detail below with reference to specific embodiments and comparative examples.

[0072] Example 1

[0073] This embodiment provides a method for cutting a silicon rod, comprising:

[0074] After the silicon rods are cut into silicon wafers and before the wafers are removed, the cutting line is controlled to move at a first preset speed, and the spray mechanism is controlled to start so as to spray lubricating liquid onto the cutting line;

[0075] Controlling the spray mechanism to close and start the material lifting operation, and controlling the cutting line to move at a second preset speed during the material lifting process, wherein the second preset speed is greater than the first preset speed;

[0076] Obtaining an actual material lifting torque and a maximum wire bow value during the material lifting process, wherein the actual material lifting torque is a torsional moment that causes the silicon wafer to move away from the cutting line during the material lifting process, and the maximum wire bow value is a maximum deformation of the cutting line in the moving direction of the silicon wafer;

[0077] According to the maximum line bow value and the actual material lifting torque, the working state of the spray mechanism during the material lifting process is controlled until the material lifting operation is completed.

[0078] Comparative Example 1

[0079] This comparative example provides a method for cutting a silicon rod, comprising:

[0080] The silicon rods are cut into silicon wafers, and then the material lifting operation is performed. During the material lifting operation, the cutting line is not flushed until the material lifting operation is completed.

[0081] Comparative Example 2

[0082] This comparative example provides a method for cutting a silicon rod, comprising:

[0083] The silicon rods are cut into silicon wafers, and then the lifting operation is performed. During the lifting operation, a high-pressure water gun is used to spray water to flush the cutting line until the lifting operation is completed.

[0084] Comparative Example 3

[0085] This comparative example provides a method for cutting a silicon rod, comprising:

[0086] The silicon rods are cut into silicon wafers, and then the lifting operation is performed. During the lifting operation, a spray pipe is used to spray water to flush the cutting line until the lifting operation is completed.

[0087] 1000 pieces of silicon rods were cut using the methods of Example 1 and Comparative Examples 1 to 3, and the hanging wire conditions of these silicon rods during the material extraction process were tested, and the test results shown in Table 1 were obtained.

[0088] Table 1

[0089] Test Number Carrier board hanging rate Glue layer hanging line rate Wafer hanging rate Example 0.91％ 1.81％ 3.67％ Comparative Example 1 14.81％ 18.52％ 29.63％ Comparative Example 2 7.14％ 5.36％ 16.07％ Comparative Example 3 7.27％ 3.64％ 14.55％

[0090] It can be seen from the experimental data that the carrier board hanging rate, the adhesive layer hanging rate and the silicon wafer hanging rate in Example 1 are all significantly lower than those in Comparative Examples 1 to 3, indicating that the present application can effectively reduce the probability of hanging during the silicon rod cutting and material extraction process, which is beneficial to improving production capacity and reducing cutting line loss and silicon wafer loss.

[0091] The present application also provides a silicon rod cutting system, comprising:

[0092] Silicon rods;

[0093] The silicon rod cutting equipment includes a cutting line, a spraying mechanism, one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include methods for executing any one of the silicon rod cutting methods.

[0094] In the embodiment, the cutting system includes a silicon rod and a cutting device thereof, and the cutting device is used to run any of the methods described to control the cutting line to cut the silicon rod and control the process of separating the cutting line from the silicon rod after cutting. In this process, by spraying lubricating liquid on the cutting line before lifting the material after cutting and controlling the cutting line to move slowly, the lubricating liquid can be brought into the carrier through the cutting line, thereby reducing the friction between the cutting line and the carrier and improving the problem of hanging wire. During the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting line, the switch of the spray mechanism is controlled according to the two, so as to regulate the friction between the cutting line and the carrier, the glue layer or the wafer during the lifting process, thereby further reducing the risk of the cutting line hanging during the lifting process. In addition, during the lifting process, controlling the cutting line to move quickly can reduce the adhesion with the carrier, the glue layer or the wafer, which is conducive to separating the cutting line from the silicon wafer and ensuring the smooth execution of the lifting operation.

[0095] In an exemplary embodiment of the present application, the cutting device of the present application further includes a mortar mechanism. Figure 3 A schematic structural diagram of the spray mechanism in this application is shown as an example. Figure 4 as well as Figure 5 The schematic diagram of the connection structure of the spray mechanism and the mortar mechanism is shown as an example, wherein: Figure 4 This is a front view of the connection structure. Figure 4 In the middle, the mortar mechanism is located on the front and the spray mechanism is located on the back; Figure 5 This is a front view of the connection structure. Figure 5 In the example, the spray mechanism is located at the front and the mortar mechanism is located at the back. Figure 3 、 Figure 4 and Figure 5As shown, the spray mechanism of the present application includes a spray pipe 10, a liquid inlet pipe 11, a fixing component 12 and a limiter 13. Specifically, the spray pipe 10 is provided with a plurality of nozzles 14, and the plurality of nozzles 14 can be arranged in a straight line on the spray pipe 10, and the nozzles 14 are directly facing the entry edge of the cutting line, so that the sprayed lubricating liquid can be evenly sprinkled on the entry edge of the cutting line and the carrier board, adhesive layer or silicon wafer; one end of the liquid inlet pipe 11 is connected to the water pump outlet hose (not shown in the figure), and the other end is connected to the spray pipe 10; one end of the fixing component 12 is connected to the limiter 13, and the other end is connected to the back of the mortar mechanism 15, and the mortar mechanism 15 includes a mortar pipe 16 for spraying cutting liquid.

[0096] The spray mechanism may also include a water pump and a liquid storage structure connected to the water pump, wherein the liquid storage structure is used to store the lubricating liquid. The liquid inlet pipe is connected to the liquid storage structure through the water pump outlet hose and the water pump. By controlling the opening of the water pump, the injection flow rate and injection time of the lubricating liquid can be controlled.

[0097] For example, the mortar mechanism and the spray mechanism may share a water pump and a liquid storage structure connected to the water pump. The liquid storage structure stores cutting fluid, which can also serve as a lubricant. The other end of the water pump outlet hose may be connected to the middle of a spray pipe, and the three nozzles are respectively provided on the left and right sides of the middle of the spray pipe.

[0098] From the above description, it can be seen that the embodiments described in this application achieve the following technical effects:

[0099] In the silicon rod cutting method of the present application, before the silicon rod is lifted after being cut through, the cutting line is first controlled to run at a smaller first preset speed, and the spray mechanism is controlled to spray lubricating liquid onto the running cutting line; then, the lubricating liquid is stopped to be sprayed onto the cutting line, and the lifting operation is started, and the cutting line is controlled to run at a larger second preset speed during the lifting process; finally, the actual lifting torque and the maximum wire bow value of the cutting line during the lifting process are obtained, and the working state of the spray mechanism during the lifting process is controlled according to the two obtained values. The present application sprays lubricating liquid onto the cutting line and controls the cutting line to move slowly before lifting after cutting, and the lubricating liquid can be brought into the carrier plate through the cutting line, thereby reducing the friction between the cutting line and the carrier plate and improving the problem of hanging wire; during the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting line, the switch of the spray mechanism is controlled according to the two, so as to regulate the friction between the cutting line and the carrier plate, the glue layer or the wafer during the lifting process, which can further reduce the risk of the cutting line hanging during the lifting process. In addition, during the material lifting process, controlling the rapid movement of the cutting line can reduce adhesion with the carrier, adhesive layer or wafer, which is conducive to separating the cutting line from the silicon wafer and ensuring the smooth execution of the material lifting operation.

[0100] Those skilled in the art will understand that the various embodiments described are specific examples for implementing the present application, and that in actual applications, various changes in form and detail may be made thereto without departing from the spirit and scope of the present application. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be based on the scope defined in the claims.

Claims

1. A method for cutting a silicon rod, characterized in that: include: After the silicon rods are cut into silicon wafers and before the wafers are removed, the cutting line is controlled to move at a first preset speed, and the spray mechanism is controlled to start so as to spray lubricating liquid onto the cutting line; Controlling the spray mechanism to close and start the material lifting operation, and controlling the cutting line to move at a second preset speed during the material lifting process, wherein the second preset speed is greater than the first preset speed; Obtaining an actual material lifting torque and a maximum wire bow value during the material lifting process, wherein the actual material lifting torque is a torsional moment that causes the silicon wafer to move away from the cutting line during the material lifting process, and the maximum wire bow value is a maximum deformation of the cutting line in the moving direction of the silicon wafer; According to the maximum line bow value and the actual material lifting torque, the working state of the spray mechanism during the material lifting process is controlled.

2. The method for cutting silicon rods according to claim 1, wherein: According to the maximum line bow value and the actual material lifting torque, the working state of the spray mechanism during the material lifting process is controlled, including: Determining the friction coefficient of the cutting wire according to the maximum wire bow value and the actual material lifting torque; When the friction coefficient is greater than a first threshold value and less than or equal to a second threshold value, controlling the spray mechanism to start so as to spray the lubricating liquid onto the cutting line; When the friction coefficient is greater than the second threshold, at least the material lifting operation is stopped and the spraying mechanism is controlled to start so as to spray the lubricating liquid onto the cutting line; When the friction coefficient is less than or equal to a third threshold, the spray mechanism is controlled to be closed, and the third threshold is less than or equal to the first threshold.

3. The method for cutting silicon rods according to claim 2, wherein: When the friction coefficient is greater than the second threshold, at least the material lifting operation is stopped and the spraying mechanism is controlled to start so as to spray the lubricating liquid onto the cutting line. include: When the friction coefficient is greater than the second threshold, the material raising operation is stopped, the cutting line is controlled to move at a third preset speed, and the spray mechanism is turned on so that the spray mechanism sprays the lubricating liquid toward the cutting edge of the cutting line, and the third preset speed is less than the second preset speed; When the opening time of the spray mechanism reaches the first time, the spray mechanism is controlled to be closed, the material lifting operation is continued, and the cutting line is controlled to move at the second preset speed.

4. The method for cutting silicon rods according to claim 3, wherein: Controlling the spray mechanism to close and start the material lifting operation includes: when the time duration for the cutting line to run at the first preset speed reaches a second time duration, controlling the spray mechanism to close and start the material lifting operation, and the second time duration is greater than or equal to the first time duration, Controlling the cutting line to move at a first preset speed and controlling the spray mechanism to open to spray lubricating liquid onto the cutting line includes: controlling the cutting line to move at the first preset speed and opening the spray mechanism to control the spray mechanism to spray the lubricating liquid onto the intersection of the cutting line and the carrier, wherein the silicon rod is bonded to the carrier by an adhesive layer.

5. The method for cutting silicon rods according to claim 2, wherein: Determining the friction coefficient according to the maximum wire bow value and the actual material lifting torque includes one of the following: According to the maximum line bow value and the actual material lifting torque, the friction coefficient is determined as the quotient of the maximum line bow value and the actual material lifting torque multiplied by a preset factor; Inputting the maximum line bow value and the actual lifting torque into a preset model so that the preset model outputs the friction coefficient, wherein the preset model is trained through machine learning using multiple sets of data, each set of data in the multiple sets of data including: a historical maximum line bow value, a historical lifting torque, and a historical friction coefficient; The friction coefficient is determined according to the maximum line bow value, the actual material lifting torque and a preset relationship, and the preset relationship represents the corresponding relationship between the maximum line bow value, the actual material lifting torque and the friction coefficient.

6. The method for cutting silicon rods according to claim 1, wherein: Obtaining the actual lifting torque and the maximum wire bow value during the lifting process, including: acquiring image information of the cutting line, and determining, based on the image information, a plurality of deformation amounts of the cutting line in a moving direction of the silicon wafer; determining a maximum value among the plurality of deformation amounts as the maximum line bow value; The torque value of the torque sensor on the material lifting drive shaft is read to obtain the actual material lifting torque.

7. The method for cutting silicon rods according to claim 1, wherein: The silicon rod cutting method further comprises: Obtaining the maximum wire bow value during the cutting process of the silicon rod; When the maximum wire bow value is greater than a fourth threshold value, at least one of the following is performed: controlling the mortar mechanism to open to spray cutting fluid to the cutting wire, and reducing the cutting torque.

8. The method for cutting a silicon rod according to any one of claims 1 to 7, characterized in that: The first preset speed is 2-3 m / s.

9. The method for cutting silicon rods according to claim 4, wherein: The first duration is greater than or equal to 1 minute, and the second duration is greater than or equal to 2 minutes.

10. A silicon rod cutting system, characterized in that: include: Silicon rods; The silicon rod cutting equipment includes a cutting line, a spraying mechanism, one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include a method for executing the silicon rod cutting method according to any one of claims 1 to 9.

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