Vapor chamber liquid absorption core and preparation method and application thereof

Abstract

The invention discloses a vapor chamber wick as well as a preparation method and application thereof, and relates to the technical field of polymers. According to the preparation method of the vapor chamber wick provided by the invention, Na2S2O8 and H2O2 are compounded to serve as a microetchant of the polymer wick, so that the surface roughness of the polymer wick is improved, the deformation of the obtained wick is small, the hydrophilicity of the surface of the polymer is improved, and the performance of the polymer wick is improved. Therefore, the bonding force and uniformity between the polymer and the metal coating can be improved, the thermal resistance of the liquid absorption core is fully reduced, meanwhile, the bonding capacity between the polymer liquid absorption core and the metal substrate of the vapor chamber is improved, and the thermal resistance of the obtained liquid absorption core can be reduced to 0.27 K.W <-1 > or below.

Description

Technical Field

[0001] The present invention relates to the field of polymer technology, and in particular to a vapor chamber wick and a preparation method and application thereof. Background Art

[0002] With the rapid development of electronic information technology, modern electronic technology, represented by communications and detection technologies, is undergoing revolutionary breakthroughs. This technological innovation has promoted the widespread use of consumer electronic products such as smartphones and micro base stations, and has changed people's lives. However, as the performance of electronic devices continues to improve, their power requirements are increasing, and therefore the need for heat dissipation has also doubled. In electronic devices, heat sinks are widely used for heat dissipation. Among them, wicks are key functional components that directly affect the overall thermal conductivity efficiency of the device. Wick materials can be divided into metal and non-metal. Metal wicks are currently the most commonly used wicks. However, in special scenarios with insulation requirements, non-metallic wicks can play a more effective role. However, the industry has not yet established a unified, complete, and efficient process for the preparation of non-metallic wicks. Heat sinks constructed with non-metallic wicks often have high thermal resistance, making them unable to meet the heat dissipation requirements of 5G base stations. The thermal resistance of wicks can be reduced through etching and copper plating. However, while the existing etching process can etch the wick surface, it can also cause significant deformation, which in turn weakens the bond between the wick and conventional vapor chambers, making them susceptible to detachment. Therefore, a new fabrication method is urgently needed to ensure that non-metallic wicks have lower thermal resistance while also improving their bond to the vapor chamber. Summary of the Invention

[0003] To address the deficiencies of the prior art, the present invention provides a method for preparing a vapor chamber wick. A composite of Na2S2O8 and H2O2 is used as a micro-etching agent for the polymer wick. While increasing the surface roughness of the polymer wick, the resulting wick exhibits minimal deformation and improves the hydrophilicity of the polymer surface. Consequently, the present invention can enhance the bonding strength and uniformity between the polymer and the metal coating, substantially reduce the thermal resistance of the wick, and simultaneously improve the bonding ability between the polymer wick and the vapor chamber metal substrate.

[0004] Another object of the present invention is to provide a vapor chamber wick.

[0005] Another object of the present invention is to provide an application of a vapor chamber wick.

[0006] The above-mentioned purpose of the present invention is achieved through the following technical solutions:

[0007] A method for preparing a vapor chamber wick comprises the following steps:

[0008] S1. Etching the polymer wick using a microetchant to obtain an etched polymer wick, wherein the polymer comprises a resin, the microetchant comprises Na2S2O8 and H2O2, and the mass ratio of Na2S2O8 to H2O2 in the microetchant is (1 to 4):1;

[0009] S2. The surface of the etched polymer wick obtained in step S1 is plated with metal to obtain a vapor chamber wick; the metal comprises copper.

[0010] Existing non-metallic wicks, especially polymer wicks, are usually coated with a layer of metal with good thermal conductivity on the surface to reduce the thermal resistance of the wick while ensuring the intrinsic insulation performance. In order to improve the bonding ability between metal and polymer, etching the polymer is a conventional method. The rough surface formed by etching can provide active sites for the deposition of metal coating. However, existing polymer surface etchants are usually strong oxidants such as potassium permanganate, which have a great impact on the surface of polymer wicks, causing the polymer wick to produce excessive deformation and excessive roughness, which in turn leads to a decrease in its bonding ability with the heat spreader during the subsequent assembly process. If a milder etchant is used, the etching effect on the resin surface will make the copper coating weak in bonding, the coating uneven, and the thermal resistance increased.

[0011] The preparation method of the heat spreader wick provided by the present invention first uses a micro-etching agent including Na2S2O8 and H2O2 to etch the polymer wick substrate in step S1, which can form micropores and grooves on the surface of the polymer wick, increase the roughness of the wick surface, and the etching process can improve the hydrophilicity of the polymer surface. Although the roughness of the polymer wick surface is also increased, the etching process in step S1 of the present invention is relatively gentle and simultaneously increases the hydrophilicity of the polymer surface. Therefore, it can not only ensure that the deformation of the polymer surface is small, but also improve the bonding ability between the metal coating and the polymer after etching. Therefore, after the metal plating process in step S2, the surface of the heat spreader wick provided by the present invention can form a metal coating with high uniformity, which greatly reduces the thermal resistance of the polymer wick while reducing the deformation and improving the bonding ability to the heat spreader.

[0012] The micro-etching agent used in the present invention includes Na2S2O8 and H2O2, wherein NaS2O8 can be "activated" under the catalytic conditions of H2O2 to produce sulfate radicals to etch the resin surface. The inventors of this application have found through a large number of experimental studies that only when the mass ratio of Na2S2O8 to H2O2 in the micro-etching agent is (1 to 4): 1, the resulting heat spreader wick can take into account higher metal coating bonding and heat spreader bonding. If the proportion of H2O2 is too high, the etching property is too strong. Although the number of sites for the metal coating to bind to the polymer surface increases, the bonding ability between the resulting wick and the heat spreader decreases; if the proportion of Na2S2O8 is too high, the etching effect will be too mild and the hydrophilicity of the polymer surface will be insufficient. The metal coating formed subsequently will have poor and uneven bonding, and the thermal resistance will increase.

[0013] In a specific embodiment of the present invention, the polymer absorbent core in step S1 is produced by 3D printing. More specifically, the structure of the polymer absorbent core is a conventional reticular structure in the field of absorbent cores.

[0014] In a specific embodiment of the present invention, the metal plating method in step S2 includes at least one of chemical plating and electroplating.

[0015] Preferably, the mass ratio of Na2S2O8 to H2O2 in the micro-etching agent in step S1 is (1.5-2.5):1.

[0016] Preferably, the mass ratio of the micro-etching agent to the polymer wick in step S1 is (0.5-3):1.

[0017] More preferably, the concentration of Na2S2O8 in the micro-etching agent in step S1 is 1-10 g / L.

[0018] Preferably, the etching time in step S1 is 0.5 to 10 minutes.

[0019] More preferably, the etching time in step S1 is 1 to 3 minutes.

[0020] Preferably, the etching temperature in step S1 is 15-40°C.

[0021] More preferably, the etching temperature in step S1 is 25-35°C.

[0022] Preferably, the resin in step S1 includes at least one of acrylic resin and silicone resin.

[0023] More preferably, the organic silicone resin includes at least one of polymethyl silicone resin and silicone resin.

[0024] Preferably, the thickness of the polymer absorbent core in step S1 is 0.5-1 mm.

[0025] After extensive experimental research, the inventors of the present application found that when the thickness of the polymer wick is within the range of 0.5 to 1 mm, the plating solution in step S2 can fully infiltrate the wick structure, forming a complete thermally conductive structure, thereby further reducing the thermal resistance of the wick.

[0026] Preferably, step S1 further includes a cleaning step before etching, and the cleaning includes at least one of alkaline cleaning, degreasing, and acid cleaning.

[0027] More preferably, the alkali washing is performed using an alkaline washing solution, the alkaline washing solution includes sodium hydroxide, and the concentration of sodium hydroxide in the alkaline washing solution is 16 to 20 g / L.

[0028] In a specific embodiment of the present invention, the solvent of sodium hydroxide in the alkaline washing solution includes water.

[0029] More preferably, the temperature of the alkali washing is 50-60°C.

[0030] More preferably, the mass ratio of the alkaline washing solution to the polymer liquid absorbent core is (1-3):1.

[0031] More preferably, the alkali washing time is 2 to 10 minutes.

[0032] More preferably, the degreasing is performed using a degreasing agent, the degreasing agent includes sodium dihydrogen phosphate (NaH2PO4), and the concentration of sodium dihydrogen phosphate in the degreasing agent is 1 to 10 g / L.

[0033] More preferably, the concentration of sodium dihydrogen phosphate in the degreasing agent is 6 g / L.

[0034] In a specific embodiment of the present invention, the solvent of sodium dihydrogen phosphate in the degreasing agent includes water.

[0035] More preferably, the degreasing temperature is 50-60°C.

[0036] More preferably, the mass ratio of the degreasing agent to the polymer liquid absorbent core is (1-3):1.

[0037] More preferably, the degreasing time is 2 to 10 minutes.

[0038] More preferably, the pickling is performed using an acidic washing solution, the acidic washing solution includes sulfuric acid, and the concentration of sulfuric acid in the acidic washing solution is 0.5 to 2 mol / L.

[0039] More preferably, the concentration of sulfuric acid in the acidic washing solution is 1 mol / L.

[0040] In a specific embodiment of the present invention, the solvent of sulfuric acid in the acidic washing solution includes water.

[0041] More preferably, the pickling temperature is 15-40°C.

[0042] More preferably, the mass ratio of the acidic lotion to the polymer absorbent core is (1-3):1.

[0043] More preferably, the pickling time is 1 to 3 minutes.

[0044] Preferably, the etched polymer wick obtained in step S1 is subjected to a roughening treatment with a roughening agent before metal is plated on the surface, and the roughening agent includes chromic acid.

[0045] In this field, roughening is a process that mechanically or chemically treats the surface of a workpiece (by mechanical abrasion or chemical etching) to create a microscopic roughness. This process can further increase the surface roughness of the polymer wick, increasing the number of active sites for metal deposition. However, the grooves or channels formed during roughening are smaller in size and do not significantly affect the bonding between the wick and the vapor chamber.

[0046] In a specific embodiment of the present invention, the roughening agent is a chromic acid solution prepared by reacting chromic anhydride with dilute sulfuric acid, and the dilute sulfuric acid is a sulfuric acid aqueous solution with a mass fraction of 10 wt%.

[0047] More preferably, the concentration of chromic acid in the roughening agent is 20-40 g / L.

[0048] More preferably, the concentration of chromic acid in the roughening agent is 30 g / L.

[0049] More preferably, the roughening temperature is 50-60°C.

[0050] More preferably, the mass ratio of the roughening agent to the etched polymer wick is (1-3):1.

[0051] More preferably, the roughening time is 0.5 to 2 minutes.

[0052] More preferably, the etched polymer wick obtained in step S1 is subjected to a roughening treatment with a roughening agent and then a sensitizing treatment with a sensitizer, wherein the sensitizer includes tin ions.

[0053] Sensitization can form a tin ion layer on the polymer surface, thereby increasing the subsequent reaction activity of the polymer absorbent core.

[0054] More preferably, the sensitizer comprises SnCl2.

[0055] More preferably, the sensitizer is prepared by dispersing SnCl2 in a hydrochloric acid aqueous solution, and the concentration of the hydrochloric acid solution is 10 vol%.

[0056] More preferably, the sensitization temperature is 50-60°C.

[0057] More preferably, the concentration of tin ions in the sensitizer is 1 g / L.

[0058] More preferably, the mass ratio of the sensitizer to the roughened polymer liquid-absorbing core is (1-3):1.

[0059] More preferably, the sensitization time is 1 to 3 minutes.

[0060] More preferably, the etched polymer wick obtained in step S1 is further activated with an activator after being sensitized with a sensitizer, and the activator includes at least one of silver ions and palladium ions.

[0061] The activation described herein forms a layer of elemental silver and / or palladium on the surface of the polymer wick, enhancing the reactivity of the subsequent metal plating process. The silver and / or palladium ions in the activator are reduced by the tin ions on the polymer surface to form elemental silver and / or palladium. The silver and palladium act as catalysts to promote metal deposition during the subsequent plating process.

[0062] More preferably, the activator includes at least one of silver ions and palladium ions.

[0063] In a specific embodiment of the present invention, the activator is silver ions, which are provided by a mixed solution of silver nitrate dissolved in aqueous ammonia. More preferably, the concentration of silver ions in the mixed solution is 1 to 2 g / L. More specifically, the concentration of aqueous ammonia is 0.5 to 2 mol / L.

[0064] More preferably, the activation temperature is 50-60°C.

[0065] More preferably, the mass ratio of the activator to the sensitized polymer liquid-absorbing core is (1-3):1.

[0066] More preferably, the activation time is 1 to 3 minutes.

[0067] Preferably, the metal plating method in step S2 is chemical plating.

[0068] More preferably, the electroless plating comprises mixing and reacting the etched polymer wick with copper ions. More preferably, the copper ions are provided by a copper ion solution. More preferably, the copper ion solution further comprises an additive. More preferably, the additive comprises at least one of a complexing agent and a surfactant. More preferably, the complexing agent comprises ethylenediaminetetraacetic acid. More preferably, the surfactant comprises sodium dodecylbenzenesulfonate. More preferably, the copper ion solution comprises an aqueous solution of copper sulfate.

[0069] More preferably, the concentration of the copper ion solution is 10-20 g / L.

[0070] More preferably, the concentration of the complexing agent is 20-30 g / L.

[0071] More preferably, the concentration of the surfactant is 2 to 10 g / L.

[0072] Preferably, the temperature of the metal plating in step S2 is 40-50°C.

[0073] Preferably, the metal plating time in step S2 is 30 to 60 minutes.

[0074] In a specific embodiment of the present invention, the alkali washing in step S1 includes a step of washing with water to neutrality.

[0075] In a specific embodiment of the present invention, the oil removal in step S1 includes a step of washing with water to neutrality.

[0076] In a specific embodiment of the present invention, the acid washing in step S1 includes a step of washing with water to neutrality.

[0077] In a specific embodiment of the present invention, step S1 includes a step of washing with water to neutrality after etching.

[0078] In a specific embodiment of the present invention, the step S1 includes a step of washing with water to neutrality after the roughening.

[0079] In a specific embodiment of the present invention, step S1 includes a step of washing with water to neutrality after the sensitization.

[0080] In a specific embodiment of the present invention, step S1 includes a step of washing with water to neutrality after the activation.

[0081] In a specific embodiment of the present invention, step S2 includes a step of washing with water to neutrality after the metal plating.

[0082] The present invention also protects a vapor chamber wick prepared by the above preparation method.

[0083] The present invention also protects the use of the vapor chamber wick in a vapor chamber.

[0084] In a specific embodiment of the present invention, the cooling medium in the vapor chamber includes at least one of water and acetone.

[0085] In a specific embodiment of the present invention, the vapor chamber includes a bottom plate, a top plate, support columns, and a vapor chamber wick. The top and bottom plates are connected by a plurality of support columns extending through the vapor chamber wick, and the edges of the bottom and top plates are welded. More specifically, the bottom and / or top plates are made of oxygen-free copper.

[0086] Compared with the prior art, the present invention has the following beneficial effects:

[0087] The preparation method of the vapor chamber wick provided by the present invention uses a compound of Na2S2O8 and H2O2 as a micro-etching agent for the polymer wick. While improving the surface roughness of the polymer wick, the deformation of the obtained wick is small, and the hydrophilicity of the polymer surface is improved. Therefore, the thermal resistance of the wick obtained in this application can be reduced to 0.27K·W. -1 The following has excellent thermal conductivity and excellent bonding ability with the heat spreader. BRIEF DESCRIPTION OF THE DRAWINGS

[0088] Figure 1 This is a physical picture of the polymer absorbent core described in step S1 in Example 1 of the present invention.

[0089] Figure 2 This is a physical picture of the etched polymer wick obtained in step S1 in Example 1 of the present invention.

[0090] Figure 3 This is a SEM image of the etched polymer wick obtained in step S1 in Example 1 of the present invention.

[0091] Figure 4 This is a physical picture of the vapor chamber wick obtained in step S2 of Example 1 of the present invention.

[0092] Figure 5 This is a thermal resistance diagram of the vapor chamber wick obtained in Example 1 of the present invention.

[0093] Figure 6 Figure 1 is a graph showing the binding capacity test results of the vapor chamber wick obtained in Example 1 of the present invention, wherein Figure (a) shows a wick with "poor" binding capacity, Figure (b) shows a wick with "good" binding capacity, and Figure (c) is a microscopic image of the wick with "good" binding capacity. DETAILED DESCRIPTION

[0094] The present invention will be further described below in conjunction with specific embodiments, but the examples do not limit the present invention in any form. Unless otherwise specified, the raw materials and reagents used in the examples of the present invention are conventionally purchased raw materials and reagents. Among them, the raw material information used in each example and comparative example is as follows:

[0095] Acrylic resin: Tough resin from Shenzhen Mofang New Materials Technology Co., Ltd.

[0096] Silicone resin: Light-curing silicone resin 1206C from Wuhan Kemik Biopharmaceutical Technology Co., Ltd.

[0097] Example 1

[0098] A method for preparing a vapor chamber wick comprises the following steps:

[0099] S1. Use a sodium hydroxide aqueous solution with a concentration of 18g / L to perform alkaline washing on the polymer absorbent core, wherein the polymer is acrylic resin, the temperature of the alkaline washing is 55℃, the time is 5min, and after the alkaline washing, the washing liquid is washed with water until it is neutral; use a sodium dihydrogen phosphate aqueous solution with a concentration of 6g / L to degrease the polymer absorbent core, the temperature of the degreasing is 55℃, the time is 5min, and after the degreasing, the washing liquid is washed with water until it is neutral; use a sulfuric acid aqueous solution with a concentration of 1mol / L to perform acid washing at room temperature, the acid washing time is 2min, and after the acid washing, the washing liquid is washed with water until it is neutral; use a micro-etching agent to etch the polymer absorbent core at room temperature to obtain the etched polymer absorbent core, wherein the micro-etching agent is Na+ / -HPO with a mass ratio of 2:1. 2S2O8 and H2O2, wherein the concentration of Na2S2O8 is 6g / L; the mass ratio of the microetchant to the polymer absorbent core is 1:1, and the etching time is 2 minutes; after etching, a chromic acid solution with a concentration of 30g / L is mixed with the etched polymer absorbent core, and the reaction is carried out at 55°C for 1 minute to obtain a roughened polymer absorbent core, and the core is washed with water until the washing liquid is neutral; a tin ion sensitizer is mixed with the roughened polymer absorbent core, and the reaction is carried out at 55°C for 2 minutes to obtain a sensitized polymer absorbent core, and the core is washed with water until the washing liquid is neutral; a silver ion activator is mixed with the sensitized polymer absorbent core, and the reaction is carried out at 55°C for 2 minutes to obtain an activated polymer absorbent core, and the core is washed with water until the washing liquid is neutral;

[0100] S2. The activated polymer wick obtained in step S1 is placed in a 15 g / L copper sulfate aqueous solution containing 25 g / L and 5 g / L ethylenediaminetetraacetic acid and sodium dodecylbenzenesulfonate, respectively. The mixture is reacted at 45°C for 45 minutes and washed with water until the washing solution is neutral to obtain a vapor chamber wick.

[0101] Example 2

[0102] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0103] The polymer in step S1 is silicone resin.

[0104] Example 3

[0105] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0106] The mass ratio of Na2S2O8 to H2O2 in the microetching agent in step S1 is 4:1.

[0107] Example 4

[0108] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0109] The mass ratio of Na2S2O8 to H2O2 in the microetching agent in step S1 is 1:1.

[0110] Example 5

[0111] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0112] The mass ratio of the microetching agent to the polymer wick in step S1 is 0.5:1.

[0113] Example 6

[0114] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0115] The mass ratio of the microetchant to the polymer wick in step S1 is 5:1.

[0116] Example 7

[0117] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0118] The mass ratio of the microetching agent to the polymer wick in step S1 is 3:1.

[0119] Example 8

[0120] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0121] The mass ratio of the microetching agent to the polymer wick in step S1 is 0.2:1.

[0122] Example 9

[0123] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0124] The etching temperature in step S1 is 45°C.

[0125] Example 10

[0126] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0127] The etching time in step S1 is 10 minutes.

[0128] Comparative Example 1

[0129] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0130] The mass ratio of Na2S2O8 to H2O2 in the microetching agent in step S1 is 1:3.

[0131] Comparative Example 2

[0132] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0133] The mass ratio of Na2S2O8 to H2O2 in the microetching agent in step S1 is 5:1.

[0134] Comparative Example 3

[0135] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0136] The microetchant in step S1 is replaced with alkaline potassium permanganate.

[0137] Comparative Example 4

[0138] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0139] The microetchant in step S1 is replaced with alkaline copper chloride.

[0140] Comparative Example 5

[0141] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0142] The microetchant in step S1 is replaced with ferric chloride.

[0143] Comparative Example 6

[0144] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0145] The H2O2 in the microetchant in step S1 is replaced with alkaline potassium permanganate.

[0146] Comparative Example 7

[0147] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0148] The Na2S2O8 in the microetchant of step S1 is replaced with alkaline copper chloride.

[0149] Comparative Example 8

[0150] A method for preparing a vapor chamber wick, wherein the method differs from Example 1 only in that:

[0151] The Na2S2O8 in the microetchant in step S1 is replaced with ferric chloride.

[0152] Performance Testing

[0153] Thermal Resistance Test: The thermal resistance of the vapor chamber wicks obtained in the Examples and Comparative Examples was measured using a thermal resistance tester. The thermal resistance tester contains seven sensors, and the thermal resistance data obtained is the average of the readings of the seven sensors. The test power is 65W.

[0154] Bonding Test: The vapor chamber wicks obtained in the Examples and Comparative Examples were cut diagonally and rinsed three times with deionized water. The cross-sections were visually inspected for any coating shedding. If no coating shedding occurred, the vapor chamber wick-to-coating bond was considered "excellent." If coating shedding occurred but the shedding area was less than 50%, the vapor chamber wick-to-coating bond was considered "good." If coating shedding occurred and the shedding area exceeded 50%, the vapor chamber wick-to-coating bond was considered "poor."

[0155] The test results are shown in Table 1 below:

[0156] Table 1. Performance test data of the vapor chamber wick obtained in the examples and comparative examples

[0157]

[0158]

[0159] From the experimental data in Table 1, it can be seen that the thermal resistance of the vapor chamber wick prepared by the preparation method provided by the present invention can be reduced to 0.27K·W. -1 The following has excellent thermal conductivity and excellent bonding ability with the heat spreader.

[0160] According to the data of Examples 1, 3-4, and Comparative Examples 1-2 in Table 1, it can be seen that when the mass ratio of Na2S2O8 to H2O2 in the micro-etching agent is (1-4):1 (Examples 1, 3-4), the technical effects of the present application can be achieved. Among them, when the mass ratio of Na2S2O8 to H2O2 in the micro-etching agent is the preferred (1.5-2.5):1 (Example 1), the thermal resistance of the resulting vapor chamber wick is lower.

[0161] According to the data of Examples 1, 5 to 8, when the mass ratio of the microetching agent to the polymer wick in step S1 is the preferred (0.5-3):1 (Examples 1, 5, 7), the thermal resistance of the obtained vapor chamber wick is lower.

[0162] According to Comparative Examples 3 to 8, replacing any component in the micro-etching agent, or replacing the micro-etching agent with a similar component, will result in excessively rough surface of the resulting vapor chamber wick, thereby affecting not only the bonding strength between the wick and the metal coating, but also the thermal conductivity of the resulting vapor chamber.

[0163] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A method for preparing a vapor chamber wick, characterized in that: The steps include: S1. Etching the polymer wick using a microetchant to obtain an etched polymer wick, wherein the polymer comprises a resin, the microetchant comprises Na2S2O8 and H2O2, and the mass ratio of Na2S2O8 to H2O2 in the microetchant is (1 to 4):1; S2. The surface of the etched polymer wick obtained in step S1 is plated with metal to obtain a vapor chamber wick; the metal comprises copper.

2. The method for preparing the vapor chamber wick according to claim 1, wherein: The mass ratio of the micro-etching agent to the polymer wick in step S1 is (0.5-3):

1.

3. The method for preparing the vapor chamber wick according to claim 1 or 2, wherein: Include at least one of the following (a) to (c): (a) The etching time in step S1 is 0.5 to 10 minutes; (b) The etching temperature in step S1 is 15 to 40° C.; (c) the resin in step S1 comprises at least one of an acrylic resin and a silicone resin; (d) The thickness of the polymer wick in step S1 is 0.5 to 1 mm.

4. The method for preparing the vapor chamber wick according to claim 1, wherein: The etched polymer wick obtained in step S1 is further subjected to a roughening treatment with a roughening agent before metal is plated on the surface. The roughening agent includes chromic acid.

5. The method for preparing the vapor chamber wick according to claim 4, wherein: The concentration of chromic acid in the roughening agent is 20-40 g / L.

6. The method for preparing the vapor chamber wick according to claim 5, wherein: The etched polymer wick obtained in step S1 is subjected to a roughening treatment with a roughening agent and then a sensitizing treatment with a sensitizing agent, wherein the sensitizer includes tin ions.

7. The method for preparing the vapor chamber wick according to claim 6, wherein: The etched polymer wick obtained in step S1 is subjected to sensitization treatment with a sensitizer and activation treatment with an activator, wherein the activator includes at least one of silver ions and palladium ions.

8. The method for preparing the vapor chamber wick according to claim 7, wherein: Include at least one of the following (d) and (k): (d) the roughening temperature is 50-60° C.; (e) the mass ratio of the roughening agent to the etched polymer wick is (1-3):1; (f) the sensitization temperature is 50-60° C.; (g) the concentration of tin ions in the sensitizer is 1 to 2 g / L; (h) the mass ratio of the sensitizer to the roughened polymer wick is (1-3):1; (i) the activation temperature is 50-60° C.; (j) the concentration of silver ions in the activator is 1 to 2 g / L; (k) The mass ratio of the activator to the sensitized polymer liquid-absorbing core is (1-3):

1.

9. A vapor chamber wick prepared by the preparation method according to any one of claims 1 to 8.

10. Use of the vapor chamber wick according to claim 9 in a vapor chamber.

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