Radiation-proof memory based on two-dimensional transistor

Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to an anti-radiation memory based on a two-dimensional transistor. The radiation-proof memory based on the two-dimensional transistor is constructed by using the excellent radiation-proof characteristic of the ultrathin two-dimensional semiconductor material, and the radiation of high-energy particles such as protons, electrons, gamma rays and the like in space or special environments can be effectively resisted. In an irradiation environment as high as 10 Mrad, the anti-irradiation memory can keep stable electrical performance and storage characteristics, the problems of storage data change or loss and the like of the memory caused by high-dose irradiation are effectively avoided, and long-term stable storage of the data is ensured. After the anti-radiation memory works on a low earth orbit of about 500km for half a year, the data storage capability of the anti-radiation memory is kept stable. The radiation-proof memory based on the two-dimensional transistor provides a solution for satellite data storage, and has a wide application prospect in the fields of aerospace communication, satellite edge calculation and the like.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuits, and in particular relates to a memory and a preparation process thereof. Background Art

[0002] Onboard memory, especially non-volatile memory, is a crucial component for satellites storing critical data and instructions, and must operate stably in the high-intensity radiation environment of space. However, traditional silicon-based memory has poor radiation resistance. When exposed to radiation, cosmic rays, high-energy particles, and other radiation sources can cause ionization and displacement damage to devices and chips, leading to transistor threshold voltage drift and a significant reduction in the on-off ratio. This can severely affect the accurate reading and storage of data, and may even cause data loss.

[0003] Ultrathin two-dimensional semiconductor materials, due to their unique physical properties, hold enormous potential for application in radiation-resistant applications. Two-dimensional semiconductor materials, exemplified by molybdenum disulfide, possess atomic-level thickness and ultra-flat surfaces, effectively reducing the accumulation effect of radiation within the material and exhibiting excellent radiation resistance. Furthermore, using high-irradiation-resistance sapphire materials and SOI structures as memory substrates can further minimize radiation damage. This approach aims to address the performance bottlenecks and reliability challenges of memory devices exposed to radiation, fulfilling the urgent need for highly reliable, radiation-resistant memory devices in the aerospace industry. Summary of the Invention

[0004] The purpose of the present invention is to provide a radiation-resistant memory based on two-dimensional transistors.

[0005] The radiation-resistant memory based on two-dimensional transistors proposed in the present invention uses radiation-resistant two-dimensional transistors as basic device units, and the memory structures that can be realized include read-only memory (ROM), random access memory (RAM), flash memory (Flash), etc.

[0006] The radiation-resistant memory based on a two-dimensional transistor proposed in the present invention has a radiation-resistant dose exceeding 10 Mrad (Si).

[0007] In the present invention, the two-dimensional radiation-resistant transistor of the memory uses a radiation-resistant high-resistance material as a substrate and a radiation-resistant two-dimensional semiconductor material as a channel, effectively improving the memory's radiation resistance. The two-dimensional semiconductor materials include graphene, molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, while the radiation-resistant high-resistance substrate materials include sapphire substrates, high-resistance silicon substrates, and SOI substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 This is a design roadmap for the radiation-resistant memory based on two-dimensional transistors of the present invention.

[0009] Figure 2 Schematic diagram of the structure of a read-only memory based on radiation-resistant two-dimensional transistors in Example 1 of the present invention.

[0010] Figure 3 Graphs showing different storage state data of the radiation-resistant two-dimensional transistor memory before and after irradiation in Example 1 of the present invention. DETAILED DESCRIPTION

[0011] The present invention will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, identical elements are represented by similar reference numerals. For the sake of clarity, the various parts in the accompanying drawings are not drawn to scale. In addition, some well-known parts may not be shown in the drawings.

[0012] Many specific details of the present invention are described below, such as device structures, materials, dimensions, processing techniques, and technologies, to provide a clearer understanding of the present invention. However, as will be appreciated by those skilled in the art, the present invention may be practiced without these specific details.

[0013] Example 1

[0014] Figure 1 The design roadmap of the radiation-resistant memory based on two-dimensional transistors of the present invention is shown. Figure 1 As shown, a radiation-hardened memory device based on a two-dimensional transistor uses a radiation-hardened two-dimensional semiconductor material 101 as the core channel material. Using a mature two-dimensional semiconductor device manufacturing process, a radiation-hardened two-dimensional transistor 102 is fabricated. Using the radiation-hardened two-dimensional transistor as the basic device prototype, radiation-hardened two-dimensional memories 103 with various structures can be designed, such as read-only memory, random access memory, and flash memory.

[0015] Figure 2 FIG. 4 is a schematic structural diagram of a read-only memory based on radiation-resistant two-dimensional transistors according to this embodiment.

[0016] like Figure 2 As shown, the radiation-resistant two-dimensional transistor-based read-only memory of this embodiment adopts a top-gate structure, uses radiation-resistant and high-resistance sapphire material as the substrate, uses a radiation-resistant single-layer two-dimensional molybdenum disulfide as the channel, uses hafnium oxide as the dielectric layer, and uses gold electrodes as the source, drain, and gate electrodes of the transistor. This read-only memory stores 0 and 1 states. The specific write-read operation method is as follows: the 0 state is written by applying a voltage to the source and drain to cause the channel to fuse, while the 1 state is written without any processing. The reading process is to apply an appropriate operating voltage to the source and drain. The read current corresponding to the 0 state is a small current, while the read current corresponding to the 1 state is a large current.

[0017] Figure 3Graphs showing different storage state data of the radiation-resistant two-dimensional transistor memory before and after irradiation in this embodiment.

[0018] like Figure 3 As shown, the radiation-resistant two-dimensional transistor memory clearly distinguishes between different 0 and 1 storage states, showing excellent storage performance. Furthermore, after irradiation with 10 Mrad gamma rays, the storage performance of the radiation-resistant two-dimensional transistor memory remains almost unchanged, demonstrating excellent radiation resistance.

[0019] The radiation-resistant two-dimensional transistor memory in this embodiment also boarded the "Fudan-1 Lancang-Mekong Future Satellite" to enter a low-Earth orbit of ~500 km for in-orbit testing and verification. After more than half a year of in-orbit operation, according to the data returned by the satellite, it can be seen that the radiation-resistant two-dimensional transistor memory can still work normally and its data storage capacity remains stable.

[0020] As used herein, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a list of elements (such as a process, method, article, or apparatus) includes not only those elements but also other elements not explicitly listed. In the absence of further limitations, an element defined by the phrase "comprises a..." does not exclude the presence of additional identical elements in addition to the elements included.

[0021] The examples herein do not exhaustively describe all details, nor do they limit the invention to the specific embodiments described. Numerous variations are possible based on the above description. These examples are selected and described in detail herein to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to utilize and modify the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A radiation-resistant memory based on a two-dimensional transistor, characterized in that: The memory uses radiation-resistant two-dimensional transistors as basic device units.

2. The radiation-resistant memory based on two-dimensional transistors according to claim 1, characterized in that: Its radiation dose resistance exceeds 10Mrad(Si).

3. The radiation-resistant two-dimensional transistor according to claim 1, wherein: The two-dimensional transistor memory uses radiation-resistant high-resistance material as a substrate and uses radiation-resistant two-dimensional semiconductor material as a transistor channel.

4. The two-dimensional semiconductor material according to claim 2, characterized in that The two-dimensional semiconductor materials include graphene, molybdenum disulfide, tungsten disulfide, molybdenum diselenide, tungsten diselenide and other two-dimensional materials with semiconductor properties.

5. The two-dimensional semiconductor material according to claim 2, characterized in that The preparation methods of the two-dimensional semiconductor materials include chemical vapor deposition, atomic layer deposition, mechanical stripping, etc.

6. The radiation-resistant high-resistance substrate material according to claim 2, characterized in that: The radiation-resistant high-resistance substrate material includes a sapphire substrate, a high-resistance silicon substrate, an SOI substrate, etc.

7. The radiation-resistant memory based on two-dimensional transistors according to claim 1, characterized in that: The structure of the memory includes read-only memory (ROM), random access memory (RAM), flash memory (Flash), etc.

Images