A combustion reaction cavity structure applied to a semiconductor tail gas treatment device

By designing an inner-retracting cylinder and a multi-stage reaction cylinder structure in the semiconductor exhaust gas treatment equipment, the problems of uneven gas heating and dust accumulation were solved, achieving uniform gas heating and dust removal, extending the equipment maintenance cycle, and improving production efficiency.

CN120488281BActive Publication Date: 2025-11-25ZHONGKEYI (GUANGZHOU) SEMICONDUCTOR EQUIPMENT CO LTD
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Patent Information

Application Number
CN202510740115.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-06-05
Publication Date
2025-11-25
Estimated Expiration
2045-06-05

AI Technical Summary

Technical Problem

In existing semiconductor exhaust gas treatment equipment, the excessively large aperture of the porous ceramic brick chamber leads to uneven heating of the gas, poor treatment effect near the inner wall, and dust accumulation and blockage of the combustion reaction chamber during high dust processes, resulting in a shortened equipment maintenance cycle.

Method used

Design a combustion reaction chamber structure that includes an upper, middle and lower reaction cylinder and an inner constricted cylinder. The inner constricted cylinder forms a constricted structure, allowing the gas to pass through the inner constricted cylinder before entering the middle and lower reaction cylinders. Combined with a two-stage overflow water curtain, this ensures that the gas is heated evenly and effectively removes dust or particulate byproducts.

Benefits of technology

It achieves uniform heating and combustion of gas, reduces the risk of blockage, extends equipment maintenance cycle, and improves production efficiency, making it suitable for processes with high dust and high flow rates.

✦ Generated by Eureka AI based on patent content.

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    Figure CN120488281B_ABST
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Abstract

The application belongs to the technical field of semiconductor waste gas treatment, and particularly relates to a combustion reaction cavity structure applied to a semiconductor tail gas treatment equipment, which comprises an upper cover, a burner, a waste gas connecting pipe, an upper reaction cylinder, a middle reaction cylinder, a lower reaction cylinder and an inner close-up cylinder, one end of the upper reaction cylinder is communicated with a plurality of water inlet pipes A, and one end of the middle reaction cylinder is communicated with a plurality of water inlet pipes B. The application can make the flame emitted by the gas and the flame emitting end of the burner first pass through the inner close-up cylinder, enter the inner cavity of the middle reaction cylinder, and then enter the lower reaction cylinder, so that the gas close to the inner wall of the inner close-up cylinder can also be fully and reliably heated and combusted when the gas passes through the inner close-up cylinder with a relatively small caliber; and two-stage overflow water curtains can be formed, which can more effectively carry away dust or other particulate byproducts through water flow, reduce the risk of blockage, prolong the equipment maintenance cycle, and improve the production efficiency.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor waste gas treatment, and particularly relates to a combustion reaction cavity structure applied to a semiconductor tail gas treatment device. BACKGROUND

[0002] In the prior art document with the publication number CN118623330A, a combustion cavity structure applied to a semiconductor tail gas treatment device is disclosed, which comprises a waste gas pipeline, a burner, an air curtain ring, a reaction cavity, a porous ceramic brick chamber and an upper cover. The flame generated by the combustion cavity structure is located in the porous ceramic brick chamber. However, the pore diameter of the porous ceramic brick chamber is relatively large compared with the size of the generated flame, which makes it difficult for the gas near the pore wall at the top of the porous ceramic brick chamber to be reliably and uniformly heated, resulting in poor gas treatment effect near the inner wall of the porous ceramic brick chamber. In addition, when processing large dust, the above-mentioned prior art document will produce a large amount of dust accumulation and cause the combustion reaction cavity to be blocked, which will cause the equipment to be shut down and the equipment maintenance cycle to be shortened. SUMMARY

[0003] In view of the above problems, the purpose of the present application is to provide a combustion reaction cavity structure applied to a semiconductor tail gas treatment device.

[0004] The purpose of the present application is achieved by the following technical solutions:

[0005] A combustion reaction cavity structure applied to a semiconductor tail gas treatment device, comprising an upper cover, a burner and a waste gas connector, wherein the burner is arranged in the middle of the upper cover, the lower end of each waste gas connector is uniformly arranged on the outer periphery of the burner on the upper cover, the upper end of each waste gas connector is located above the upper cover, and further comprising an upper reaction cylinder, a middle reaction cylinder, a lower reaction cylinder and an inner recessed cylinder.

[0006] The top of the upper reaction cylinder is open, the top of the upper reaction cylinder is fixed to the lower side of the upper cover, the flame emitting end of the burner and the lower end of each waste gas connector are respectively connected with the inner cavity of the upper reaction cylinder, and the bottom of the upper reaction cylinder is provided with an inner recessed cylinder mounting port.

[0007] The top of the middle reaction cylinder is open, the top of the middle reaction cylinder is fixed to the lower side of the upper reaction cylinder, and the bottom of the middle reaction cylinder is provided with a lower reaction cylinder mounting port.

[0008] The outer periphery of the lower reaction cylinder is fixed to the lower reaction cylinder mounting port, the upper and lower ends of the lower reaction cylinder are open, the upper end opening of the lower reaction cylinder is higher than the inner cavity bottom surface of the middle reaction cylinder, and the lower end opening of the lower reaction cylinder is located below the middle reaction cylinder.

[0009] The outer peripheral surface of the inner-restricted cylinder body is fixed to the inner-restricted cylinder body mounting port, both upper and lower ends of the inner-restricted cylinder body are open, the upper end opening of the inner-restricted cylinder body is higher than the inner cavity bottom surface of the upper reaction cylinder body and corresponds to the setting position of the flame emitting end of the burner, the lower end opening of the inner-restricted cylinder body extends into the inner cavity of the middle reaction cylinder body, and the inner diameter of the inner-restricted cylinder body is smaller than the inner diameter of the lower reaction cylinder body.

[0010] The upper reaction cylinder body is connected with one end of a plurality of water inlet pipes A, and the middle reaction cylinder body is connected with one end of a plurality of water inlet pipes B.

[0011] The upper reaction cylinder body, the middle reaction cylinder body, the lower reaction cylinder body and the inner-restricted cylinder body are integrated structures.

[0012] The axial center lines of the flame emitting end of the burner, the upper reaction cylinder body, the middle reaction cylinder body, the lower reaction cylinder body and the inner-restricted cylinder body are collinear.

[0013] The outer diameters of the upper reaction cylinder body, the middle reaction cylinder body, the lower reaction cylinder body and the inner-restricted cylinder body gradually decrease in size.

[0014] The outer periphery of the top opening of the upper reaction cylinder body extends to form a connecting flange portion.

[0015] The lower ends of the exhaust gas connecting pipes are located outside the upper end opening of the inner-restricted cylinder body.

[0016] The number of the water inlet pipes A and the number of the water inlet pipes B are both at least two.

[0017] The water inlet pipes A are uniformly arranged along the circumference of the upper reaction cylinder body, and the water inlet pipes B are uniformly arranged along the circumference of the middle reaction cylinder body.

[0018] The outer peripheral contours of the inner cavities of the upper reaction cylinder body and the middle reaction cylinder body are circular, the water inlet pipes A are parallel to the tangential direction of the outer peripheral contour of the inner cavity of the upper reaction cylinder body, and the water inlet pipes B are parallel to the tangential direction of the outer peripheral contour of the inner cavity of the middle reaction cylinder body.

[0019] The height of one end of each of the water inlet pipes A is lower than the height of the upper end opening of the inner-restricted cylinder body, and one end of each of the water inlet pipes B is lower than the height of the upper end opening of the lower reaction cylinder body.

[0020] The advantages and positive effects of this invention are as follows:

[0021] This invention, by setting an inner constricted cylinder to form a constricted structure, allows the gas and the flame emitted from the burner's flame-emitting end to first pass through the inner constricted cylinder into the inner cavity of the intermediate reaction cylinder, and then into the lower reaction cylinder. This ensures that when the gas passes through the relatively small-diameter inner constricted cylinder, the gas near the inner wall of the inner constricted cylinder can also be fully and reliably heated and burned. Furthermore, it can form a two-stage overflow water curtain, which can more effectively remove dust or other particulate byproducts through water flow, reducing the risk of blockage, extending equipment maintenance cycles, improving production efficiency, and making it more suitable for processes with high dust and high flow rates. Attached Figure Description

[0022] Fig. 1 This is a three-dimensional structural diagram of the present invention;

[0023] Fig. 2 This is a schematic diagram of the external structure of the present invention;

[0024] Fig. 3 This is a cross-sectional structural diagram of the present invention.

[0025] In the diagram: 1 is the upper stage reaction cylinder, 2 is the middle stage reaction cylinder, 3 is the lower stage reaction cylinder, 4 is the inner constriction cylinder, 5 is the water inlet pipe A, and 6 is the water inlet pipe B.

[0026] 001 is the top cover, 002 is the burner, and 003 is the exhaust gas connection. Detailed Implementation

[0027] The following is in conjunction with the appendix Figs. 1-3 The present invention will be described in further detail below.

[0028] A combustion reaction chamber structure for use in semiconductor exhaust gas treatment equipment, such as Figs. 1-3 As shown, this embodiment includes a top cover 001, a burner 002, and exhaust gas connection pipes 003. The burner 002 is located in the middle of the top cover 001. Six exhaust gas connection pipes 003 are evenly distributed on the top cover 001 and around the outer periphery of the burner 002, with the upper ends of each exhaust gas connection pipe 003 located above the top cover 001. In this embodiment, the burner 002 is a conventional product, and the installation structure of the burner 002 and exhaust gas connection pipes 003 on the top cover 001 also adopts conventional technology. Each exhaust gas connection pipe 003 is connected to the exhaust pipe of the corresponding equipment.

[0029] The combustion reaction chamber structure of the semiconductor exhaust gas treatment equipment in this embodiment also includes an upper reaction cylinder 1, a middle reaction cylinder 2, a lower reaction cylinder 3, and an inner constriction cylinder 4.

[0030] The top of the upper reaction cylinder 1 is open, the top of the upper reaction cylinder 1 is fixed to the lower side of the upper cover 001, the flame emitting end of the burner 002 and the lower end of each exhaust pipe 003 are respectively connected with the inner cavity of the upper reaction cylinder 1, and the bottom of the upper reaction cylinder 1 is provided with an inner-receiving cylinder mounting opening. In the embodiment, the outer periphery of the top opening of the upper reaction cylinder 1 extends to form a connecting flange part, which can be conveniently connected with the upper cover 001 through the connecting flange part and bolts.

[0031] The top of the middle reaction cylinder 2 is open, the top of the middle reaction cylinder 2 is fixed to the lower side of the upper reaction cylinder 1, and the bottom of the middle reaction cylinder 2 is provided with a lower reaction cylinder mounting opening.

[0032] The outer periphery of the lower reaction cylinder 3 is fixed to the lower reaction cylinder mounting opening, and the upper and lower ends of the lower reaction cylinder 3 are open. The upper end opening of the lower reaction cylinder 3 is higher than the inner cavity bottom surface of the middle reaction cylinder 2, and the lower end opening of the lower reaction cylinder 3 is located below the middle reaction cylinder 2. The lower end opening of the lower reaction cylinder 3 is used to be connected with the subsequent prior art spray structure, and the connection arrangement mode adopts the prior art.

[0033] The outer periphery of the inner-receiving cylinder 4 is fixed to the inner-receiving cylinder mounting opening, and the upper and lower ends of the inner-receiving cylinder 4 are open. The upper end opening of the inner-receiving cylinder 4 is higher than the inner cavity bottom surface of the upper reaction cylinder 1 and corresponds to the setting position of the flame emitting end of the burner 002 in the vertical direction. The lower end opening of the inner-receiving cylinder 4 extends into the inner cavity of the middle reaction cylinder 2, and the inner diameter of the inner-receiving cylinder 4 is smaller than the inner diameter of the lower reaction cylinder 3. By arranging the inner-receiving cylinder 4 to form a receiving structure, the gas and the flame emitted by the flame emitting end of the burner 002 can first pass through the inner-receiving cylinder 4 into the inner cavity of the middle reaction cylinder 2 and then into the lower reaction cylinder 3, so that the gas near the inner wall of the inner-receiving cylinder 4 can also be fully and reliably heated and burned when passing through the relatively small inner-receiving cylinder 4.

[0034] Specifically, the upper reaction cylinder 1, the middle reaction cylinder 2, the lower reaction cylinder 3 and the inner chamfered cylinder 4 are integrated structures, which are convenient for manufacturing and subsequent disassembly. The outer diameter of the upper reaction cylinder 1, the outer diameter of the middle reaction cylinder 2, the outer diameter of the lower reaction cylinder 3 and the outer diameter of the inner chamfered cylinder 4 gradually decrease in size, so that the overall space occupied by the upper reaction cylinder 1, the middle reaction cylinder 2, the lower reaction cylinder 3 and the inner chamfered cylinder 4 is minimized. The axial center line of the flame emitting end of the burner 002, the axial center line of the upper reaction cylinder 1, the axial center line of the middle reaction cylinder 2, the axial center line of the lower reaction cylinder 3 and the axial center line of the inner chamfered cylinder 4 are collinear, so as to ensure uniform combustion of the exhaust gas in the overall space formed by the upper reaction cylinder 1, the middle reaction cylinder 2, the lower reaction cylinder 3 and the inner chamfered cylinder 4. The lower end of each exhaust gas connector 003 is located outside the upper end opening of the inner chamfered cylinder 4, and each exhaust gas connector 003 can collect the collected exhaust gas into the inner cavity of the upper reaction cylinder 1 and then uniformly flow to the upper end opening of the inner chamfered cylinder 4 to be fully burned by the flame emitted by the flame emitting end of the burner 002.

[0035] Specifically, one end of each of the two water inlet pipes A 5 is communicated with the upper reaction cylinder 1, one end of each of the two water inlet pipes B 6 is communicated with the middle reaction cylinder 2, and the other end of each of the water inlet pipes A 5 and the other end of each of the water inlet pipes B 6 are both communicated with an external water source. By making the water inlet pipes A 5 and the water inlet pipes B 6 enter the whole formed by the upper reaction cylinder 1, the middle reaction cylinder 2, the lower reaction cylinder 3 and the inner flared cylinder 4, the dust or other particulate by-products generated by the combustion reaction can be carried away by the water flow, effectively reducing the risk of reaction cavity blockage, prolonging the equipment maintenance cycle and improving production efficiency. The height position of one end of each of the water inlet pipes A 5 is lower than the height position of the upper end opening of the inner flared cylinder 4, and the height position of one end of each of the water inlet pipes B 6 is lower than the height position of the upper end opening of the lower reaction cylinder 3, thereby effectively ensuring that the water input into the upper reaction cylinder 1 and the middle reaction cylinder 2 through the water inlet pipes A 5 and the water inlet pipes B 6 respectively forms overflow under the blocking action of the inner flared cylinder 4 and the lower reaction cylinder 3, and forms a reliable water curtain on the inner wall of the inner flared cylinder 4 and the inner wall of the lower reaction cylinder 3 respectively, thereby ensuring that the dust or other particulate by-products are carried away, while reducing the temperature of the whole formed by the upper reaction cylinder 1, the middle reaction cylinder 2, the lower reaction cylinder 3 and the inner flared cylinder 4, preventing personnel from being scalded by touching the outer surface, and avoiding the problem that the parts are easily corroded at high temperature. Each of the water inlet pipes A 5 is uniformly arranged along the circumference of the upper reaction cylinder 1, each of the water inlet pipes B 6 is uniformly arranged along the circumference of the middle reaction cylinder 2, the outer peripheral contour of the inner cavity of the upper reaction cylinder 1 and the outer peripheral contour of the inner cavity of the middle reaction cylinder 2 are both circular, the water input direction of each of the water inlet pipes A 5 to the upper reaction cylinder 1 is parallel to the tangential direction of the outer peripheral contour of the inner cavity of the upper reaction cylinder 1, and the water input direction of each of the water inlet pipes B 6 to the middle reaction cylinder 2 is parallel to the tangential direction of the outer peripheral contour of the inner cavity of the middle reaction cylinder 2, so that the water input into the upper reaction cylinder 1 and the middle reaction cylinder 2 can first form a vortex before overflowing, thereby ensuring the formation of a uniform water curtain.

Claims

1. A combustion reaction chamber structure for a semiconductor exhaust gas treatment device, comprising a top cover (001), a burner (002), and exhaust gas inlets (003), wherein the burner (002) is disposed in the middle of the top cover (001), and a plurality of exhaust gas inlets (003) are uniformly disposed on the top cover (001) and on the outer periphery of the burner (002), the upper ends of each exhaust gas inlet (003) being located above the top cover (001), characterized in that: It also includes an upper reaction cylinder (1), an intermediate reaction cylinder (2), a lower reaction cylinder (3), and an inner-closing cylinder (4); The upper stage reaction cylinder (1) has an opening at the top, and the top of the upper stage reaction cylinder (1) is fixed to the lower side of the upper cover (001). The flame-emitting end of the burner (002) and the lower ends of each of the exhaust gas pipes (003) are respectively connected to the inner cavity of the upper stage reaction cylinder (1). The bottom of the upper stage reaction cylinder (1) is provided with an inner constricted cylinder installation port. The intermediate reaction cylinder (2) has an opening at the top, and the top of the intermediate reaction cylinder (2) is fixed to the lower side of the upper reaction cylinder (1). The bottom of the intermediate reaction cylinder (2) has an installation port for the lower reaction cylinder. The outer circumferential surface of the lower-level reaction cylinder (3) is fixed to the installation port of the lower-level reaction cylinder. Both the upper and lower ends of the lower-level reaction cylinder (3) are open. The upper opening of the lower-level reaction cylinder (3) is higher than the bottom surface of the inner cavity of the intermediate-level reaction cylinder (2). The lower opening of the lower-level reaction cylinder (3) is located below the intermediate-level reaction cylinder (2). The outer circumferential surface of the inner constricted cylinder (4) is fixed to the inner constricted cylinder mounting port. Both the upper and lower ends of the inner constricted cylinder (4) are open. The upper opening of the inner constricted cylinder (4) is higher than the bottom surface of the inner cavity of the upper stage reaction cylinder (1) and corresponds vertically to the position of the flame emission end of the burner (002). The lower opening of the inner constricted cylinder (4) extends into the inner cavity of the intermediate stage reaction cylinder (2). The inner diameter of the inner constricted cylinder (4) is smaller than the inner diameter of the lower stage reaction cylinder (3). The upper-stage reaction cylinder (1) is connected to one end of several water inlet pipes A (5), and the middle-stage reaction cylinder (2) is connected to one end of several water inlet pipes B (6).

2. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: The upper-level reaction cylinder (1), the middle-level reaction cylinder (2), the lower-level reaction cylinder (3), and the inner-closing cylinder (4) are an integral structure.

3. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: The axial centerline of the flame-emitting end of the burner (002), the axial centerline of the upper reaction cylinder (1), the axial centerline of the middle reaction cylinder (2), the axial centerline of the lower reaction cylinder (3), and the axial centerline of the inner constriction cylinder (4) are all collinear.

4. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: The outer diameter of the upper reaction cylinder (1), the outer diameter of the middle reaction cylinder (2), the outer diameter of the lower reaction cylinder (3), and the outer diameter of the inner constriction cylinder (4) gradually decrease in sequence.

5. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: A connecting flange is formed on the outer periphery of the top opening of the upper reaction cylinder (1).

6. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: The lower end of each of the exhaust gas inlets (003) is located outside the upper opening of the inner constricted cylinder (4).

7. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: The number of water inlet pipes A (5) and B (6) is at least two.

8. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: Each of the water inlet pipes A (5) is uniformly arranged along the circumference of the upper reaction cylinder (1), and each of the water inlet pipes B (6) is uniformly arranged along the circumference of the middle reaction cylinder (2).

9. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: The outer periphery of the inner cavity of the upper reaction cylinder (1) and the outer periphery of the inner cavity of the intermediate reaction cylinder (2) are both circular. The water supply direction of each water inlet pipe A (5) to the upper reaction cylinder (1) is parallel to the tangential direction of the outer periphery of the inner cavity of the upper reaction cylinder (1). The water supply direction of each water inlet pipe B (6) to the intermediate reaction cylinder (2) is parallel to the tangential direction of the outer periphery of the inner cavity of the intermediate reaction cylinder (2).

10. The combustion reaction chamber structure for a semiconductor exhaust gas treatment device according to claim 1, characterized in that: The height of one end of each of the water inlet pipes A (5) is lower than the height of the upper opening of the inner constriction cylinder (4), and the height of one end of each of the water inlet pipes B (6) is lower than the height of the upper opening of the lower stage reaction cylinder (3).

Citation Information

Patent Citations

  • Equipment for treating VOCs (volatile organic chemicals) exhaust gases and use method of equipment

    CN107131508A

  • Combustion cavity structure applied to semiconductor tail gas treatment equipment

    CN118623330A