Wave optical simulation-electrical simulation coupling method for solar cell design

Abstract

The invention discloses a wave optical simulation-electrical simulation coupling method for solar cell design, and relates to a solar cell simulation technology. Comprising the following steps: (1) calculating light field distribution under standard AM1.5 wide-spectrum sunlight under a multi-period structure; (2) dividing the obtained light field distribution into two parts; and (3) finally, a photoelectric coupling method is adopted, and an I-V curve and related parameters of the device are obtained through simulation calculation. According to the method, photoelectric coupling simulation is combined, the influence of light field distribution on the electrical performance is systematically analyzed, the conversion efficiency of the solar cell is remarkably improved, and specific application includes optimization design of TOPCon and SHJ cell structures and micro-nano structures (such as black silicon and photonic crystals) of the TOPCon and SHJ cell structures. Through a computer model and simulation tools such as Silvaco-Atlas, detailed simulation is carried out on the crystalline silicon solar cell, cell design is optimized, and key parameters such as short-circuit current, open-circuit voltage, fill factors and conversion efficiency are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a solar cell design and optimization method based on the combination of wave optics and electrical simulation. Background Art

[0002] Solar cell simulation is a method that uses computer models to simulate solar cell performance. With the growing global demand for energy and the emphasis on renewable energy, solar energy, as a representative of clean energy, has garnered widespread attention. Simulation technology is widely used in solar cell research. Simulation allows for rapid evaluation of the impact of different materials, structures, and processes on cell performance during the design phase, saving significant time and R&D costs. Simulation also helps optimize solar cell design, improving conversion efficiency and stability. It can also simulate cell performance under varying environmental conditions, such as light intensity and temperature variations, providing reliable data support for practical applications.

[0003] In recent years, solar cells have been widely used in the photovoltaic industry due to their high efficiency and stability. Traditional optical simulation methods primarily rely on ray optics. For example, existing commercial device simulation software (such as Quokka and Silvaco) already has built-in ray light field simulation capabilities. However, ray optics cannot effectively reflect the effects of micro-nano optical structures (such as photonic crystals) on the light field. Compared to ray optics, wave optics can reflect the interference and diffraction of light, providing higher accuracy in device simulation and greater adaptability to complex micro-nano optical structures.

[0004] However, during the wave optics simulation process, commercial device simulation software is unable to complete the optical and electrical coupling simulation of wave optics, and lacks a coupling method for wave optics simulation and device simulation. Secondly, such tools generally ignore the light field distribution caused by micro-nano optical structures. When calculating the light field distribution of pyramid structures, they use planar structures to realize the electrical simulation of micro-nano optical structures. In this case, the simulation results show that the light field distribution in the pyramid area is extremely uneven, which indicates that traditional simulation methods cannot reflect the light field changes brought about by wave optics.

[0005] Therefore, in order to solve the shortcomings of traditional solar cell design methods, it is necessary to propose an optimization design method based on the combination of wave optics and electrical simulation. Summary of the Invention

[0006] In order to solve the problem that traditional optical simulation methods (mainly using ray optics) mentioned in the above background technology cannot reflect the interference and diffraction problems caused by micro-nano optical structures, a coupling method of wave optical simulation and electrical simulation in solar cells is proposed, aiming to solve the limitations of traditional optical simulation methods when dealing with complex structures (such as multi-periodic structures, etc.) and high-precision requirements.

[0007] The purpose of the present invention can be achieved through the following technical solutions:

[0008] (1) Calculate the light field distribution (including wave optics light field distribution and ray optics light field distribution) of standard AM1.5 wide-spectrum sunlight under a multi-period structure. The method used is: linear superposition of the light field distributions of each monochromatic light; for the multi-period solar cell pyramid structure, a single row arrangement is adopted, and the arrangement is recorded along the x direction.

[0009] However, due to the non-uniform spatial distribution of the light field data points of each monochromatic light, it is impossible to directly perform linear superposition of the corresponding points. Therefore, the scattered data of the light field are first gridded and interpolated: Step 1: Input the known scattered point coordinates (x, y) and the corresponding light field (z, including direction and size) to prepare for interpolation; Step 2: Generate regular grid point coordinates, specify x v and y v Vector (where x v Represents the unit grid point in the x direction, y v Represents the unit grid point in the y direction), use the meshgrid function, according to the x v 、y v The vector generates regular grid point coordinate matrices X and Y (where the generated X and Y represent the horizontal and vertical coordinates of the grid points, respectively); Step 3: Take the coordinate points and light field from the first step as input parameters, call the scatteredInterpolant function, and create a scattered point interpolation object F (F is mainly used to interpolate irregularly distributed scattered point data). The purpose is to be able to estimate the light field value at the unknown point based on the known scattered point data; Step 4: Input the X and Y converted in the second step into the scattered point interpolation object F for interpolation calculation to obtain the light field estimation value z at each grid point. v ; Step 5: Interpolate the grid point coordinates (X, Y) and the light field estimation value z v Combined into a complete output data matrix;

[0010] After the grid interpolation processing is completed, the light field distribution of each monochromatic light is linearly superimposed to obtain the light field distribution under standard AM1.5 wide-spectrum sunlight: Step 1: Initialize relevant variables and parameters (such as vectors storing wavelength information, matrices storing light intensity, etc.); Step 2: Read the light intensity data at each wavelength; Step 3: Process the light intensity data. Since the problem of excessive calculation volume is encountered many times during the three-dimensional device simulation process, the calculation model is simplified to a 2D model. The method is to divide the pyramid corresponding to the solar cell into n sections for light intensity calculation. The cutting direction of the n sections is: the section is perpendicular to the bottom surface of the pyramid and parallel to the x-axis, and multiple parallel cutting surfaces perpendicular to the bottom surface are obtained, such as Figure 1However, during the simulation, it was found that there was a certain difference in the light intensity of the sections at different pyramid positions, especially the light intensity of the section at the middle pyramid was higher, which would lead to an overestimation of the short-circuit current, as shown in Figure 1. Figure 1 As shown in b, the simulation is inaccurate, so the light intensity of the sections at different positions is superimposed on a section of the pyramid, referred to as the concentrated section, for calculation. Due to the symmetry of the pyramid, only half of the situation needs to be considered. The specific steps are to set the weight distribution of each section, and then perform weighted superposition on each section. For each wavelength, the interpolated light intensity of each section is multiplied by the weight corresponding to each section, and the superposition is performed to obtain the light field of the corresponding wavelength inside the pyramid, which is reflected in the corresponding monochromatic wavelength light field at each point along the x direction of the concentrated section; then the above light field inside the pyramid is repeated for all wavelengths, and all wavelengths are superimposed to obtain the light field distribution under standard AM1.5 broadband sunlight, that is, the light field of all wavelengths at each point along the x direction of the concentrated section.

[0011] The above-mentioned weights are preferably: a symmetrical oblique side is cut into 8 parts using 9 faces on average. Due to symmetry, one side of the oblique side is considered. The first face corresponds to the bottom of the pyramid's oblique side, and the fifth face corresponds to the top of the pyramid. The weights of the first to fifth faces are 1 / 8, 2 / 8, 2 / 8, 2 / 8, and 1 / 8 respectively.

[0012] Finally, to address the problem of excessive computational complexity caused by the pyramid structure of multi-period solar cell devices, a method is adopted to integrate the pyramids of multiple periods into the first period pyramid for calculation. The specific method is to keep the ordinate (the coordinate corresponding to the column if multiple periods are arranged in a single column) y and the light field data z unchanged, and divide the abscissa x (the abscissa corresponding to each period if multiple periods are arranged in a single column) of each point along the concentrated section of other periods by the length of one period. The remainder obtained is the abscissa corresponding to this point on the concentrated section of the first pyramid. The light field data corresponding to the abscissa are then added together. This process is repeated to obtain the light field required for the electrical calculations of all period pyramids.

[0013] (2) The obtained light field distribution is divided into two parts: for the light field inside the solar cell pyramid, the wave optics and ray optics light field distribution are selected, that is, the light field obtained in step (1); for the light field outside the solar cell pyramid (that is, the part below the pyramid in the solar cell), based on the light intensity attenuation formula Calculations are performed where I(x0) is the light intensity at the initial point at the bottom of the first period pyramid (x0, which can be considered the original point), I(x) is the light intensity at point x, and L is the absorption depth of crystalline silicon at a wavelength of 300-1200nm.

[0014] (3) Finally, the photoelectric coupling method is adopted: using the relationship between the light field and the carrier generation rate, based on the formula (λ is the wavelength; 1240nm·eV is the photon energy constant; I is the light intensity corresponding to each wavelength within a pyramid period or the light intensity corresponding to each wavelength outside the pyramid period obtained by using the light intensity calculation in step (2); Q is the electron charge, usually 1.6e-19; 1e12 is the unit conversion coefficient: μm -3 Convert to cm -3 ) to obtain the rate of change of carrier generation rate with wavelength ΔG; then the light intensity inside and outside the device is integrated by wavelength to calculate the carrier generation rate G inside and outside the pyramid respectively. Then the carrier generation rate G is introduced into the device structure, and the electrical simulation calculation of the device is performed using semiconductor device simulation tools to obtain the electrical parameters of the device, including the short-circuit current (J sc ), open circuit voltage (V oc ), fill factor (FF) and efficiency (E ff ).

[0015] Beneficial effects of the present invention:

[0016] The present invention proposes a photoelectric coupling method to calculate the electrical characteristics of a device under wave optics, solving the problem that traditional simulation methods cannot reflect the changes in the light field caused by wave optics. The main features are: (1) In order to solve the problem of high computational complexity in directly simulating the wide-spectrum light field distribution of sunlight, a multi-spectral light field superposition synthesis method is used to simulate the light field distribution of sunlight at different wavelengths, solving the computational complexity problem caused by the non-uniform spatial distribution of monochromatic light data points corresponding to different wavelengths; (2) In order to solve the problem of multi-cycle computational complexity, a multi-cycle light field synthesis method is proposed, which not only improves the accuracy of light field simulation, but also can more realistically reflect the light field distribution characteristics of solar cells under actual working conditions, providing more reliable data support for electrical performance simulation; (3) In order to solve the problem that interference and diffraction in wave optics will increase the computational complexity of the model, the pyramid model light field is divided into two parts, the inner and outer parts of the pyramid, solving the problem of high computational consumption in wave optics; (4) Traditional ray optics methods have limitations when dealing with complex structures and high precision requirements. The present invention combines photoelectric coupling simulation technology to systematically analyze the influence of light field distribution on electrical performance and obtain more accurate electrical performance data. For the application of the present invention, the light field distribution and electrical performance of solar cells with different structures (such as TOPCon and SHJ) are simulated in detail, the cell design is optimized, and their performance advantages under wave optics are studied. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1Schematic diagram of the slicing-based 2D model simplification method; (a) Schematic diagram of the slicing method; (b) The light field intensity obtained by slicing at different positions, showing that the light field distribution of the central slice overestimates the overall light field intensity;

[0018] Figure 2 This is the TOPCon solar cell structure diagram of the present invention

[0019] Figure 3 This is the structural diagram of the SHJ solar cell of the present invention

[0020] Figure 4 This is the four-period structure diagram of the solar cell of the present invention

[0021] Figure 5 Schematic diagram of the simplified method adopted by the present invention based on the symmetry of the pyramid

[0022] Figure 6 Schematic diagram of the method for integrating the four-cycle pyramid into the first-cycle pyramid

[0023] Figure 7 Cross-sectional comparison between positive pyramid device and inverted pyramid device

[0024] Figure 8 is the short-circuit current J of eight device models under wave optics and ray optics SC

[0025] Figure 9 is the open-circuit voltage V of eight device models under wave optics and ray optics OC

[0026] Figure 10 The filling factors FF of eight device models under wave optics and ray optics are

[0027] Figure 11 is the efficiency E of eight device models under wave optics and ray optics ff DETAILED DESCRIPTION

[0028] In order to make the present invention more easily understood, the present invention is further described below with reference to the accompanying drawings and examples, but the present invention is not limited thereto.

[0029] Example 1

[0030] This example is as follows: Figure 2 、 3 The device structure diagram of this example is shown in FIG.

[0031] The solar cell designed in this example includes two basic structures: four-cycle TOPCon and SHJ. The four-cycle schematic diagram is shown in the figure. Figure 4As shown, each structure is designed in two forms: a positive pyramid and an inverted pyramid, and black silicon and photonic crystal structures, namely micro-nano optical structures, are introduced on this basis.

[0032] The simulation steps for the four-period TOPCon and SHJ positive pyramid structures, black silicon TOPCon and SHJ positive pyramid structures, and photonic crystal TOPCon and SHJ positive pyramids under wave optics conditions are as follows:

[0033] The first step is to input the known scattered point coordinates (x, y) and the corresponding light field (z, including direction and size) to prepare for interpolation;

[0034] The second step is to generate regular grid point coordinates, specify x v and y v Vector (where x v Represents the unit grid point in the x direction, y v Represents the unit grid point in the y direction), use the meshgrid function, according to the x v 、y v The vector generates regular grid point coordinate matrices X and Y (where the generated X and Y represent the horizontal and vertical coordinates of the grid points, respectively);

[0035] The third step is to use the coordinate points and light field from the first step as input parameters, call the scatteredInterpolant function, and create a scattered point interpolation object F (F is mainly used to interpolate irregularly distributed scattered point data). The purpose is to estimate the light field value at the unknown point based on the known scattered point data.

[0036] The fourth step is to input the X and Y converted in the second step into the scattered point interpolation object F for interpolation calculation to obtain the light field estimation value z at each grid point. v ;

[0037] The fifth step is to interpolate the grid point coordinates (X, Y) and the light field estimation value z v Combined into a complete output data matrix;

[0038] The sixth step is to initialize related variables and parameters, including the empty matrix combineddata for storing the spliced original data, the variable longestdata for recording the longest data length, the vector lambda_vector for storing wavelength information, and the light intensity matrix tabularfieldtensor;

[0039] The seventh step is to read the light field distribution at each wavelength of 300-1200nm from the external file (45 wavelengths in total);

[0040] The eighth step is to simplify the 2D model of TOPCon and SHJ models by dividing the pyramid corresponding to the solar cell into n sections for light intensity calculation. The cutting direction of the n sections is: the section is perpendicular to the bottom surface of the pyramid and parallel to the x-axis to obtain multiple parallel cutting surfaces perpendicular to the bottom surface, such as Figure 1 As shown in a;

[0041] The ninth step is to consider the light field distribution of 9 sections for the structures of TOPCon and SHJ positive pyramid and inverted pyramid. Since the pyramid has symmetry, only half of the pyramid can be considered to simplify the calculation. Figure 5 As shown, five slices (#1 to #5) with x = 0, 0.5, 1, 1.5, and 2 microns are considered, and weights are assigned to these slices, with weights of 1 / 8, 2 / 8, 2 / 8, 2 / 8, and 1 / 8, respectively. For each wavelength, the interpolated light intensity of each slice is multiplied by the corresponding weight of each slice, and the superposition is performed to obtain the light field inside the pyramid for the corresponding wavelength; then the above light field inside the pyramid is repeated for all wavelengths, and all wavelengths are superimposed to obtain the light field distribution under standard AM1.5 broadband sunlight;

[0042] The tenth step is to integrate the light field of the four-period structure into the first period for calculation: set the vertical coordinates and light field data of each point inside the device unchanged, divide the horizontal coordinates of each point in the second, third, and fourth periods by the length of one period, and the remainder obtained is the horizontal coordinate of the point on the concentrated section, such as Figure 6 As shown, in this way, the light fields of all periodic points are superimposed in the first period to obtain the light fields required for the electrical calculation of the pyramid in all periods;

[0043] In the eleventh step, the obtained light field distribution is divided into two parts: for the light field inside the solar cell pyramid, the wave optics and ray optics light field distribution are selected, that is, the light field obtained in the tenth step; for the light field outside the solar cell pyramid (that is, the part below the pyramid in the solar cell), based on the light intensity attenuation formula Calculate, where I(x0) is the light intensity at the initial point x0 at the bottom of the first period pyramid, I(x) is the light intensity at point x, and L is the absorption depth of crystalline silicon at a specific wavelength.

[0044] Step 12: Calculate the carrier generation rate: For the inner area of the pyramid, based on the formula (λ is the wavelength; 1240nm·eV is the photon energy constant; I is the light intensity corresponding to each wavelength within a pyramid period or the light intensity corresponding to each wavelength outside the pyramid period obtained by the light intensity calculation in step 11; Q is the electron charge, usually 1.6e-19; 1e12 is the unit conversion coefficient: μm -3 Convert to cm-3 ) obtain the rate of change of the carrier generation rate with wavelength ΔG, then integrate the light intensity inside and outside the device by wavelength, and obtain the carrier generation rate distribution of the inner and outer regions of the pyramid as tabularfield_wave.spec and deep_tabularfield_wave.spec respectively;

[0045] In the thirteenth step, the carrier generation rate distribution tabularfield_wave.spec and deep_tabularfield_wave.spec are imported into the device model, and the semiconductor device simulation tool is used for electrical calculation. The following seven models are considered: (1) Klaassen (KLA) model: unified low field mobility model for electron and hole related calculations; (2) SRH recombination model: trap-assisted recombination model; (3) RICHTER.AUG: Auger recombination model based on silicon doping concentration; (4) Fermi: Fermi Dirac distribution; (5) BGN: bandgap narrowing effect; (6) QTUNNSC: quantum tunneling model; (7) TAT.NONLOCAL: non-localized trap-assisted tunneling model. Through simulation, the electrical parameters are finally obtained: short-circuit current (J sc ), open circuit voltage (V oc ), fill factor (FF) and efficiency (E ff ).

[0046] For the simulation of the four-period TOPCon and SHJ inverted pyramid structures under wave optics conditions, their two-dimensional cross-sections are similar to those of the regular pyramid structures, which are actually the same cross-sections offset by half a period, such as Figure 7 As shown, in the simulation method of this example, the models of the two device structures are actually equivalent, so there is no need to re-establish the model. The same device model as the positive pyramid structure can be directly used to simulate the inverted pyramid structure. It is only necessary to change the light field distribution inside the device; because the starting and ending points of the cross-section of the inverted pyramid and the positive pyramid differ by half a period, when processing the light field distribution of the inverted pyramid, the horizontal axis image can be moved to the right by half a period.

[0047] Simulation results analysis

[0048] By simulating solar cells with different structures, it is found that the impact of wave optics on solar cells is indeed different from that of ray optics.

[0049] Table 1 Electrical parameters of eight device models under wave optics and ray optics

[0050]

[0051]

[0052] From the results, it can be seen that the electrical performance indicators (J sc 、V oc , FF, E ff ) are higher than the performance indicators obtained by ray optics simulation. This is because the photogenerated carrier field of wave optics is more concentrated on the pyramid surface, which improves the light absorption rate of the battery. Therefore, the electrical performance indicators obtained by wave optics are higher. For the photonic crystal TOPCon, the electrical performance indicators obtained by wave optics simulation are closer to those of ray optics. This is because ray optics will reduce the light absorption rate when processing photonic crystals and inverted pyramid models (this is similar to the performance in photonic crystal SHJ and inverted pyramid SHJ). For the TOPCon inverted pyramid structure, the V oc , FF is higher, this is because the photogenerated carrier field of wave optics is more concentrated on the pyramid surface.

[0053] In SHJ, the electrical performance indicators (J sc 、V oc , FF, E ff ) are very similar to the results of ray optics simulations. In the black silicon SHJ, the electrical performance indicators obtained by wave optics simulation are all higher than those obtained by ray optics simulation. This is because the black silicon SHJ has a higher light absorption rate under wave optics conditions.

[0054] In summary, the present invention improves the design accuracy and electrical performance of solar cells by introducing the wave optics simulation method; the proposed optoelectronic coupling simulation method is suitable for the optimized design of various solar cell structures, especially for high-efficiency solar cells containing micro-nano structures, and has a significant optimization effect.

Claims

1. A coupling method of wave optics simulation and electrical simulation for solar cell design, characterized in that: The method comprises the following steps: (1) Calculate the light field distribution of the standard AM1.5 wide-spectrum sunlight under the multi-period structure by linearly superimposing the light field distribution of each monochromatic light; for the multi-period solar cell pyramid structure, a single row arrangement is used, and the arrangement is recorded along the x direction; The spatial distribution of the light field data points of each monochromatic light is not uniform, and the corresponding points cannot be directly linearly superimposed. Therefore, the scattered data of the light field are first gridded and interpolated: Step 1: Input the known scattered point coordinates (x, y) and the corresponding light field (z, including direction and size) to prepare for interpolation; Step 2: Generate regular grid point coordinates, specify x v and y v Vector (where x v Represents the unit grid point in the x direction, y v Represents the unit grid point in the y direction), use the meshgrid function, according to the x v 、y v The vector generates regular grid point coordinate matrices X and Y (where the generated X and Y represent the horizontal and vertical coordinates of the grid points, respectively); Step 3: Take the coordinate points and light field from the first step as input parameters, call the scatteredInterpolant function, and create a scattered point interpolation object F (F is mainly used to interpolate irregularly distributed scattered point data). The purpose is to be able to estimate the light field value at the unknown point based on the known scattered point data; Step 4: Input the X and Y converted in the second step into the scattered point interpolation object F for interpolation calculation to obtain the light field estimation value z at each grid point. v ; Step 5: Interpolate the grid point coordinates (X, Y) and the light field estimation value z v Combined into a complete output data matrix; After the grid interpolation processing is completed, the light field distribution of each monochromatic light is linearly superimposed to obtain the light field distribution under standard AM1.5 wide-spectrum sunlight: Step 1: Initialize relevant variables and parameters (such as vectors storing wavelength information, matrices storing light intensity, etc.); Step 2: Read the light intensity data at each wavelength; Step 3: Process the light intensity data. Since the problem of too much calculation is encountered many times during the simulation of three-dimensional devices, the calculation model is simplified to a 2D model. The method is to divide the pyramid corresponding to the solar cell into n sections for light intensity calculation. The cutting direction of the n sections is: the section is perpendicular to the bottom surface of the pyramid and parallel to the x-axis to obtain multiple parallel vertical bottom surface cutting surfaces; During the simulation process, there is a certain gap in the light intensity of the sections at different pyramid positions, especially the section at the middle pyramid. The high light intensity of the surface will lead to overestimation of the short-circuit current and inaccurate simulation. Therefore, it is considered to superimpose the light intensity of the sections at different positions on a section of the pyramid, referred to as the concentrated section, for calculation. Since the pyramid is symmetrical, only half of the situation needs to be considered. The specific steps are to set the weight distribution of each section, and then perform weighted superposition on each section. For each wavelength, the interpolated light intensity of each section is multiplied by the weight corresponding to each section, and the superposition is obtained to obtain the light field of the corresponding wavelength inside the pyramid, which is reflected in the corresponding monochromatic wavelength light field at each point along the x direction of the concentrated section; then repeat the above light field inside the pyramid for all wavelengths, and superimpose all wavelengths to obtain the light field distribution under standard AM1.5 broadband sunlight, that is, the light field of all wavelengths at each point along the x direction of the concentrated section; Finally, to address the problem of excessive computational complexity caused by the pyramid structure of multi-period solar cell devices, a method is adopted to integrate the pyramids of multiple periods into the first period pyramid for calculation. The specific method is to keep the ordinate (the coordinate corresponding to the column if multiple periods are arranged in a single column) y and the light field data z unchanged, and divide the abscissa x (the abscissa corresponding to each period if multiple periods are arranged in a single column) of each point along the concentrated section of other periods by the length of one period. The remainder obtained is the abscissa corresponding to this point on the concentrated section of the first pyramid. The light field data corresponding to the abscissa are then added together. This process is repeated to obtain the light field required for the electrical calculations of all period pyramids. (2) The obtained light field distribution is divided into two parts: for the light field inside the solar cell pyramid, the wave optics and ray optics light field distribution are selected, that is, the light field obtained in step (1); for the light field outside the solar cell pyramid (that is, the part below the pyramid in the solar cell), based on the light intensity attenuation formula Calculation is performed, where I(x0) is the light intensity at the initial point at the bottom of the first period pyramid, I(x) is the light intensity at point x, and L is the absorption depth of crystalline silicon at wavelengths of 300-1200nm; (3) Finally, the photoelectric coupling method is adopted: using the relationship between the light field and the carrier generation rate, based on the formula (λ is the wavelength; 1240nm·eV is the photon energy constant; I is the light intensity corresponding to each wavelength within a pyramid period or the light intensity corresponding to each wavelength outside the pyramid period obtained by using the light intensity calculation in step (2); Q is the electron charge, usually 1.6e-19; 1e12 is the unit conversion coefficient: μm -3 Convert to cm -3 ) to obtain the rate of change of carrier generation rate with wavelength ΔG; then the light intensity inside and outside the device is integrated by wavelength to calculate the carrier generation rate G inside and outside the pyramid respectively. Then the carrier generation rate G is introduced into the device structure, and the electrical simulation calculation of the device is performed using semiconductor device simulation tools to obtain the electrical parameters of the device, including the short-circuit current (J sc ), open circuit voltage (V oc ), fill factor (FF) and efficiency (E ff ).

2. The method according to claim 1, characterized in that Weight: Cut a symmetrical oblique side surface into 8 parts using 9 equal faces. Due to symmetry, one side of the oblique side surface is considered. The first facet corresponds to the bottom of the pyramid's oblique side surface, and the fifth facet corresponds to the top of the pyramid. The weights of the first to fifth faces are 1 / 8, 2 / 8, 2 / 8, 2 / 8, and 1 / 8 respectively.

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