Sandwich structure thermal field of sapphire furnace and method

Abstract

The invention relates to an interlayer structure thermal field and method of a sapphire furnace, the interlayer structure thermal field is applied to the sapphire furnace, the interlayer structure thermal field comprises a heat preservation structure, the heat preservation structure comprises a plurality of interlayer units, the adjacent interlayer units are mutually connected, and the peripheries of the interlayer units are encircled to form the peripheral side face of the heat preservation structure; the interlayer unit is provided with a hollow cavity, and the cavity is filled with heat preservation particles. The top surface insulation board is connected to the top of the peripheral side surface; the bottom surface insulation board is connected to the bottom of the peripheral side surface; a heat preservation cavity is formed by the peripheral side surface, the top surface heat preservation plate and the bottom surface heat preservation plate; and the heater is located in the heat preservation cavity and used for heating the crucible. The interlayer units of the heat preservation structure are filled with the heat preservation particles, the heat preservation effect of the heat preservation structure is improved, the stability of a thermal field in a sapphire furnace is improved, and then the growth quality of sapphire crystals is improved.

Description

Technical Field

[0001] The present application relates to the field of crystal growth, and in particular to a sandwich structure thermal field and method of a sapphire furnace. Background Art

[0002] As a specialized piece of equipment, the core function of a sapphire crystal growth furnace is to synthesize high-quality sapphire crystals by precisely controlling key parameters such as temperature, solution concentration, and growth rate through high-temperature melting and crystal growth principles. The uniformity and accuracy of the temperature distribution within the furnace play a crucial role in the crystal growth process. Failure to meet process standards for temperature distribution will directly lead to abnormal increases in thermal stress within the crystal, potentially causing crystal defects or affecting the overall crystal structure. Furthermore, an undesirable temperature distribution is detrimental to the stable formation of the crystal's convex interface, which can also significantly negatively impact the crystal's growth quality and ultimate performance.

[0003] In the existing technology, sapphire furnaces usually need to operate in a high-temperature, high-vacuum environment, and the heating system, insulation structure, and crucible diameter are large, resulting in the temperature distribution in the thermal field structure inside the furnace not meeting the process requirements, which in turn leads to poor quality of sapphire crystal growth.

[0004] Therefore, the technical problem of the prior art is that the growth quality of sapphire crystal is relatively poor. Summary of the Invention

[0005] The present application provides a sandwich structure thermal field and method for a sapphire furnace, which improves the stability of the thermal field in the sapphire furnace by filling the sandwich unit of the thermal insulation structure with thermal insulation particles, thereby improving the growth quality of sapphire crystals.

[0006] In the first aspect, the present application provides a sandwich structure thermal field and method for a sapphire furnace, which adopts the following technical solutions: A sandwich structure thermal field of a sapphire furnace, applied in the sapphire furnace, comprises: a thermal insulation structure, the thermal insulation structure comprising: a plurality of sandwich units, adjacent sandwich units being connected to each other, and the plurality of sandwich units being circumferentially surrounded to form a peripheral side surface of the thermal insulation structure; the sandwich units having a hollow chamber filled with thermal insulation particles; a top thermal insulation plate connected to the top of the peripheral side surface; and a bottom thermal insulation plate connected to the bottom of the peripheral side surface; a thermal insulation cavity being formed by the peripheral side surface, the top thermal insulation plate and the bottom thermal insulation plate; and a heater located in the thermal insulation cavity and used for heating a crucible.

[0007] Preferably, the interlayer unit includes: a switching plate, which is located inside the chamber, and the switching plate divides the chamber into a first chamber facing the inside of the thermal field and a second chamber facing the outside of the thermal field, and the thermal insulation particles are filled in the first chamber.

[0008] Preferably, the chamber is a rectangular chamber, the switching plate is the same length as the chamber, and the interlayer unit further includes: a driving member, the driving member is located outside the insulation structure, the driving member is connected to and acts on the switching plate, and the driving member is used to drive the switching plate so that the switching plate has a first state and a second state: in the first state, the switching plate is in a vertical state, so that the first chamber is of equal width at the top and bottom, so that the distribution thickness of the insulation particles is uniform; in the second state, the switching plate is in an inclined state, so that the first chamber is wide at the bottom and narrow at the top, so that the distribution thickness of the insulation particles is wide at the bottom and narrow at the top.

[0009] Preferably, the switching plate includes: a first plate, the first plate is located at the bottom of the switching plate, and the first end of the first plate is rotatably connected to the bottom surface of the interlayer unit; a second plate, the second plate is located above the first plate, the second plate is rotatably connected to the second end of the first plate, and the top of the second plate passes through the top insulation plate and extends to the outside of the insulation cavity.

[0010] Preferably, the height of the first plate is less than or equal to the width of the second cavity.

[0011] Preferably, the driving member comprises: A motor, wherein the motor is fixedly connected to the outer wall of the sapphire furnace; a tungsten wire rope, the tungsten wire rope being passed through the sapphire furnace and connected to the motor and the top of the switching plate; Or, the driving member includes: A motor, wherein the motor is fixedly connected to the inner wall of the sapphire furnace; a tungsten wire rope connected to the motor and the top of the switching plate; Or, the driving member includes: An electric cylinder, the electric cylinder being fixedly connected to the outer wall of the sapphire furnace; a tungsten wire rope, the tungsten wire rope being passed through the sapphire furnace and connected to the electric cylinder and the top of the switching plate; Or, the driving member includes: An electric cylinder fixedly connected to the inner wall of the sapphire furnace; a tungsten wire rope connected to the electric cylinder and the top of the switching plate; Or, the driving member includes: An electric cylinder, the electric cylinder being fixedly connected to the outer wall of the sapphire furnace; A connecting rod, the connecting rod passing through the sapphire furnace and connected to the electric cylinder and the top of the switching plate; Or, the driving member includes: An electric cylinder fixedly connected to the inner wall of the sapphire furnace; A connecting rod is connected to the electric cylinder and the top of the switching plate.

[0012] Preferably, a through hole is provided on the top insulation plate, and the through hole is used to allow the seed crystal to pass through. One of the interlayer units also includes a cover plate assembly, and the cover plate assembly is used to cooperate with the switching plate to form a first position and a second position, so that the cover plate assembly is blocked in the through hole or detached from the through hole: when the cover plate assembly is in the first position, the switching plate is in the first state, and the switching plate drives the cover plate assembly to move so that the cover plate assembly covers the through hole; when the cover plate assembly is in the second position, the switching plate is in the second state, and the switching plate resets the cover plate assembly so that the cover plate assembly detaches from the through hole.

[0013] Preferably, the cover plate assembly includes: a cover plate, which is used to cooperate with the through hole; an elastic member, which is connected between the cover plate and the top insulation plate, and the elastic member is elastic, and is used to cooperate with the switching plate to make the cover plate cover the through hole or detach from the through hole.

[0014] Preferably, a slope is provided on the top of the switching plate, and the slope is used to cooperate with the elastic member in a sliding manner, so that the elastic member slides on the slope to switch to the first position or the second position.

[0015] In a second aspect, the present application provides a method for a sandwich structure thermal field of a sapphire furnace, which adopts the following technical solution: A sandwich structure thermal field method for a sapphire furnace is applicable to the sandwich structure thermal field of the sapphire furnace, comprising: in the material boiling stage, placing the switching plate in a first state; in the crystal growing stage, placing the switching plate in a second state.

[0016] In summary, this application includes at least one of the following beneficial technical effects: 1. This application improves the thermal insulation effect of the thermal insulation structure by filling thermal insulation particles in the interlayer unit of the thermal insulation structure, thereby improving the stability of the thermal field in the sapphire furnace and thus improving the growth quality of sapphire crystals.

[0017] 2. This application changes the state of the insulation particles by switching the plate, and is suitable for the cooking stage and crystal growth stage of the sapphire furnace, which is beneficial to improving the insulation effect in the cooking stage and the formation of a temperature gradient in the crystal growth stage, thereby improving the growth quality of sapphire crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a schematic diagram of the thermal field described in this application; Figure 2 is a top view of the thermal insulation structure of the thermal field described in this application; Figure 3 is a schematic diagram of a sandwich unit in the thermal insulation structure of the thermal field described in this application; Figure 4 This is a schematic diagram of a first state of a switching plate in the thermal insulation structure of the thermal field described in this application; Figure 5 This is a schematic diagram of the second state of the switching plate in the thermal insulation structure of the thermal field described in this application; Figure 6 This is a schematic diagram of the first position of the cover plate assembly in the thermal insulation structure of the thermal field described in this application; Figure 7 This is a schematic diagram of the second position of the cover plate assembly in the thermal insulation structure of the thermal field described in this application; Description of reference numerals: 100. Insulation structure; 110. Interlayer unit; 111. Cavity; 1111. First cavity; 1112. Second cavity; 112. Insulation material; 113. Switching plate; 1131. First plate; 1132. Second plate; 1133. Inclined surface; 114. Cover plate assembly; 1141. Elastic member; 1142. Cover plate; 120. Side surface; 130. Top insulation plate; 131. Through hole; 140. Bottom insulation plate; 150. Insulation cavity; 200. Heater; 300. Crucible. DETAILED DESCRIPTION

[0019] The serial numbers assigned to the components herein, such as "first," "second," etc., are used solely to distinguish the objects being described and do not convey any order or technical meaning. The terms "connection" and "coupling" used in this application, unless otherwise specified, include both direct and indirect connections (couplings). In the description of this application, it should be understood that the terms "upper," "lower," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inside," "outside," "clockwise," "counterclockwise," and the like, indicating positions or positional relationships, are based on the positions or positional relationships shown in the accompanying drawings and are intended solely to facilitate the description of this application and simplify the description. They are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0020] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0021] The embodiment of the present application provides a sandwich structure thermal field and method for a sapphire furnace, which improves the stability of the thermal field in the sapphire furnace by filling the sandwich unit 110 of the insulation structure 100 with insulation particles, thereby improving the growth quality of sapphire crystals.

[0022] In order to better understand the above technical solution, the following will be described in detail with reference to the accompanying drawings and specific implementation methods. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0023] The present application aims to provide a sandwich structure thermal field and method for a sapphire furnace, which realizes flexible control of the temperature distribution of the thermal field through a dynamically adjustable thermal insulation structure 100 in the thermal field, meets the temperature gradient requirements of different stages of sapphire crystal growth, and improves the quality of crystal growth.

[0024] The present application provides a sandwich structure thermal field of a sapphire furnace, which is applied to a sapphire furnace, such as Figure 1 、 2 As shown, it includes an insulation structure 100 and a heater 200. The insulation structure 100 is used to insulate the internal environment. The insulation structure 100 includes an interlayer unit 110, a top insulation layer and a bottom insulation layer. There are multiple interlayer units 110, adjacent interlayer units 110 are connected to each other, and multiple interlayer units 110 are surrounded to form a peripheral side surface 120 of the insulation structure 100; the interlayer unit 110 has a hollow chamber, and the chamber is filled with insulation particles; the top insulation plate 130 is connected to the top of the peripheral side surface 120; the bottom insulation plate 140 is connected to the bottom of the peripheral side surface 120, and an insulation cavity 150 is formed by the peripheral side surface 120, the top insulation plate 130 and the bottom insulation plate 140; the heater 200 is used to heat the internal environment to create a suitable crystal growth environment. The heater 200 is located in the insulation cavity 150, and the heater 200 is used to heat the crucible 300.

[0025] In other words, if Figure 1 、 2As shown, the insulation structure 100 includes a plurality of interlayer units 110 connected to each other, and the plurality of interlayer units 110 are enclosed in a circumferential direction to form a peripheral side surface 120 of the insulation structure 100; the top of the peripheral side surface 120 is connected to a top insulation plate 130, and the bottom is connected to a bottom insulation plate 140, thereby forming a relatively closed insulation cavity 150; the heater 200 is located in the insulation cavity 150, and is used to heat the crucible 300 to provide the required high temperature environment for the growth of sapphire crystals.

[0026] Further, such as Figure 3 As shown, the interlayer unit 110 includes a switching plate 113, which is located inside the chamber. The switching plate 113 divides the chamber into a first chamber 1111 facing the inside of the thermal field and a second chamber 1112 facing the outside of the thermal field, and the thermal insulation particles are filled in the first chamber 1111. In other words, each interlayer unit 110 is a hollow rectangular chamber, and a switching plate 113 is provided inside the chamber. The switching plate 113 divides the chamber into a first chamber 1111 and a second chamber 1112. In the circumferential radial direction of the thermal field, the first chamber 1111 is located near the center, and the second chamber 1112 is located away from the center, that is, the first chamber 1111 and the second chamber 1112 are separated by the switching plate 113, and the thermal insulation particles are filled in the first chamber 1111. The switching plate 113 is the same length as the chamber, so that the thermal insulation particles located in the first chamber 1111 will not be transferred to the second chamber 1112. That is to say, the switching plate 113 divides the rectangular sandwich unit 110 into a first cavity 1111 close to the center of the circle and a second cavity 1112 away from the center of the circle; the first cavity 1111 is filled with flowable thermal insulation particles, and the thermal insulation particles are made of high-temperature resistant and low thermal conductivity materials, such as alumina particles or graphite particles.

[0027] Furthermore, if Figure 4 、 5 As shown, the chamber is a rectangular chamber, the switching plate 113 is the same length as the chamber, and the interlayer unit 110 also includes a driving member (the driving member is not shown in the figure), which is located outside the insulation structure 100, and the driving member is connected to and acts on the switching plate 113. The driving member is used to drive the switching plate 113 so that the switching plate 113 has a first state and a second state: in the first state, the switching plate 113 is in a vertical state, so that the first chamber 1111 is of equal width at the top and bottom, so that the distribution thickness of the insulation particles is uniform; in the second state, the switching plate 113 is in an inclined state, so that the first chamber 1111 is wide at the bottom and narrow at the top, so that the distribution thickness of the insulation particles is wide at the bottom and narrow at the top.

[0028] In other words, if Figure 4 、 5As shown, the switching plate 113 can be moved under the action of the driving member to form a first state and a second state. In the first state, the switching plate 113 remains vertical, so that the first cavity 1111 and the second cavity 1112 are of equal width from top to bottom, that is, the heat-insulating particles filled in the first cavity 1111 are also distributed based on the shape of the first cavity 1111, that is, they are distributed with equal width from top to bottom in the height direction, which is suitable for the cooking stage in the sapphire process. It can be understood that in the cooking stage, the internal environment needs to be well insulated and the temperature must be kept constant and uniform. By evenly arranging the heat-insulating particles from top to bottom in the first cavity 1111, it is beneficial to the uniform configuration of the internal environment temperature in the cooking stage.

[0029] like Figure 4 、 5 As shown, in the second state, the switching plate 113 is switched to an inclined state. Specifically, the bottom of the first cavity 1111 is wider and the top is narrower, that is, the first cavity 1111 forms a accommodating space that is narrow at the top and wide at the bottom. Since the thermal insulation particles are fluid, the original switching plate 113 can provide lateral support for the thermal insulation particles, and the current switching plate 113 is in an inclined state. Under the action of gravity, the thermal insulation particles surge downward to fill the expanded part below, so that the thermal insulation particles in the first cavity 1111 are arranged in a manner of narrow at the top and wide at the bottom. That is, at this time in the first cavity 1111, the thermal insulation particles located at the bottom are thicker, while the thermal insulation particles located at the top are thinner, that is, the thermal insulation effect at the bottom is better, and the thermal insulation effect at the top is poor, so as to form a temperature gradient in the vertical direction, which is suitable for the sapphire crystal growth stage.

[0030] Specifically, such as Figure 4 、 5 As shown, the switching plate 113 includes a first plate 1131 and a second plate 1132. The first plate 1131 is located at the bottom of the switching plate 113, and the first end of the first plate 1131 is rotatably connected to the bottom surface of the interlayer unit 110. The second plate 1132 is located above the first plate 1131 and is rotatably connected to the second end of the first plate 1131. The top of the second plate 1132 passes through the top insulation plate 130 and extends to the outside of the insulation chamber 150. It should be noted that the passage through which the switching plate 113 or the second plate 1132 passes through the top insulation plate 130 is slightly larger than the second plate 1132, so that the second plate 1132 does not interfere with the top insulation plate 130 during the downward tilting process. When the switching plate 113 is in the first state, the switching plate 113 extends to the outside of the insulation chamber 150, that is, the switching plate 113 is raised relative to the top insulation plate 130; and when the switching plate 113 is in the second state, the top of the switching plate 113 or the second plate 1132 is flush with or slightly raised to the top insulation plate 130.

[0031] Among them, the switching plate 113 includes a first plate 1131 and a second plate 1132 arranged from top to bottom; the first plate 1131 is located at the bottom of the switching plate 113, and the first end of the first plate 1131 is connected to the bottom surface of the interlayer unit 110 by a hinge; the second plate 1132 is located above the first plate 1131, and the second plate 1132 is connected to the second end of the first plate 1131 by a hinge, and the top of the second plate 1132 passes through the top insulation plate 130 and extends to the outside of the insulation cavity 150; the extension part passing through the top insulation plate 130 is used to connect with the driving member; further, the height of the first plate 1131 is less than or equal to the width of the second cavity 1112, so that the switching plate 113 can, under the action of the driving member, make the first plate 1131 rotate and fit to the bottom surface of the interlayer unit 110, so that the first cavity 1111 forms a cone with a narrow top and a wide bottom.

[0032] It should be noted that the material of the switching plate 113 can be selected to be a high-temperature resistant material, such as a metal tungsten thin plate, a quartz thin plate, an alumina thin plate, etc.

[0033] The driving member includes a motor and a tungsten wire rope. The motor is fixedly connected to the outer wall of the sapphire furnace, and the tungsten wire rope passes through the sapphire furnace and is connected to the motor and the top of the switching plate 113; or, the motor is fixedly connected to the inner wall of the sapphire furnace, and the tungsten wire rope is connected to the motor and the top of the switching plate 113; Alternatively, the driving member includes an electric cylinder and a tungsten wire rope, the electric cylinder is fixedly connected to the outer wall of the sapphire furnace, the tungsten wire rope passes through the sapphire furnace and is connected to the electric cylinder and the top of the switching plate 113; or, the electric cylinder is fixedly connected to the inner wall of the sapphire furnace, and the tungsten wire rope is connected to the electric cylinder and the top of the switching plate 113; Alternatively, the driving member includes an electric cylinder and a connecting rod, the electric cylinder is fixedly connected to the outer wall of the sapphire furnace, and the connecting rod passes through the sapphire furnace and is connected to the electric cylinder and the top of the switching plate 113; or, the electric cylinder is fixedly connected to the inner wall of the sapphire furnace, and the connecting rod is connected to the electric cylinder and the top of the switching plate 113.

[0034] The drive element is used to drive the switching plate 113, so that the switching plate 113 has a first state and a second state. The structure of the drive element can be implemented in various ways. The following uses the combination of an electric cylinder and a tungsten wire rope as an example to illustrate: the electric cylinder is fixedly mounted on the outer wall of the sapphire furnace, and the piston rod of the electric cylinder can move linearly in the vertical direction. One end of the tungsten wire rope is connected to the piston rod, and the other end passes through the sapphire furnace and is fixedly connected to the top of the second plate 1132 of the switching plate 113. When the piston rod of the cylinder is extended, the tungsten wire rope is tightened, driving the second plate 1132 to rise, while the first plate 1131 remains in a vertical state under the influence of the second plate 1132. When the piston rod of the cylinder is retracted, the tungsten wire rope is relaxed, and the second plate 1132 descends under its own weight. The first plate 1131 rotates outward due to its own weight and the compression of the insulation particles, and finally contacts the bottom surface of the second cavity 1112.

[0035] Furthermore, if Figure 6 、 7 As shown, a through hole 131 is provided on the top insulation plate 130, and the through hole 131 is used to allow the seed crystal to pass through. One of the interlayer units 110 also includes a cover assembly 114, and the cover assembly 114 is used to cooperate with the switching plate 113 to form a first position and a second position, so that the cover assembly 114 is blocked in the through hole 131 or detached from the through hole 131: when the cover assembly 114 is in the first position, the switching plate 113 is in the first state, and the switching plate 113 drives the cover assembly 114 to move so that the cover assembly 114 covers the through hole 131; when the cover assembly 114 is in the second position, the switching plate 113 is in the second state, and the switching plate 113 resets the cover assembly 114 to detach from the through hole 131.

[0036] Specifically, if Figure 6 、 7 As shown, a cover plate assembly 114 is further provided on one of the interlayer units 110, which is used to cooperate with the switching plate 113 to achieve blocking or disengagement of the through hole 131 on the top surface insulation plate 130. The cover plate assembly 114 includes a cover plate 1142 and an elastic member 1141. The cover plate 1142 is connected to the top surface insulation plate 130 via the elastic member 1141, and the cover plate 1142 is used to cooperate with the through hole 131; the elastic member 1141 is connected between the cover plate 1142 and the top surface insulation plate 130, and the elastic member 1141 is elastic. The elastic member 1141 is used to cooperate with the switching plate 113 to cover the through hole 131 or disengage the cover plate 1142 from the through hole 131. The elastic member 1141 can be a spring, an elastic plate, or an elastic rod. As an example, the top of the switching plate 113 is provided with an inclined surface 1133, and the inclined surface 1133 is used to slide with the elastic member 1141 so that the elastic member 1141 slides on the inclined surface 1133 to switch the first position or the second position. Figure 6 As shown, when the second plate 1132 rises to a vertical state (i.e., when the switching plate 113 is in the first state), the inclined surface 1133 contacts and squeezes the elastic member 1141, causing the elastic member 1141 to deform, thereby pushing the cover plate 1142 to move above the through hole 131 and block the hole, i.e., the cover plate 1142 is in the first position; Figure 6 As shown, when the second plate 1132 descends (when the switching plate 113 is in the second state), the inclined surface 1133 disengages from the elastic member 1141, and the elastic member 1141 returns to its original shape without being affected by the second plate 1132, driving the cover plate 1142 to leave the through hole 131, that is, the cover plate 1142 is in the second position.

[0037] The present application also provides a sandwich structure thermal field method for a sapphire furnace, which is applicable to the sandwich structure thermal field of the above-mentioned sapphire furnace, including: During the cooking stage, the switching plate 113 is placed in the first state; During the crystal growth stage, the switching plate 113 is placed in the second state.

[0038] Specifically, during the cooking stage: the driver is activated, and the switching plate 113 is pulled to a vertical position via a tungsten wire rope or connecting rod, that is, the switching plate 113 is in the first position, and the insulation particles are evenly distributed in the first chamber 1111, forming a uniform insulation layer. At the same time, the inclined surface 1133 of the switching plate 113 pushes the elastic member 1141, causing the cover plate 1142 to block the through hole 131 of the top insulation plate 130, preventing molten material from splashing and impurities from entering, and maintaining a stable temperature field. During the crystal growth stage: the driver relaxes the tension, and the switching plate 113 tilts under the action of gravity and the insulation particles, that is, the switching plate 113 is in the second position, and the first chamber 1111 becomes wider at the bottom and narrower at the top, and the insulation particles are redistributed to form a temperature gradient that is thicker at the bottom and thinner at the top. At this time, the elastic member 1141 is reset, and the cover plate 1142 is separated from the through hole 131, allowing the seed crystal to descend and contact the melt for crystal growth.

[0039] It should be noted that width refers to the distance value in the outward direction from the center of the thermal field, for example: the width of the first cavity 1111 and the width of the second cavity 1112 both refer to the distance in the outward direction from the center of the thermal field; height refers to the distance value in the vertical direction, for example: the height of the first plate 1131 and the height of the second plate 1132 both refer to the distance in the vertical direction; length refers to the distance value in the tangential direction of the thermal field circumference or parallel to the tangential direction, for example: the length of the switching plate 113, the length of the first plate 1131, and the length of the second plate 1132 both refer to the distance in the tangential direction of the thermal field circumference or parallel to the tangential direction.

[0040] Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0041] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A sandwich structure thermal field of a sapphire furnace, used in a sapphire furnace, characterized in that: include: A heat-insulating structure (100), comprising: A plurality of sandwich units (110), wherein adjacent sandwich units (110) are connected to each other, and the plurality of sandwich units (110) are circumferentially enclosed to form a peripheral side surface (120) of the thermal insulation structure (100); the sandwich unit (110) has a hollow cavity, and the cavity is filled with thermal insulation particles; a top surface insulation board (130), the top surface insulation board (130) being connected to the top of the peripheral side surface (120); and a bottom surface insulation board (140), the bottom surface insulation board (140) being connected to the bottom of the peripheral side surface (120); A heat preservation cavity (150) is formed by the peripheral side surface (120), the top heat preservation plate (130), and the bottom heat preservation plate (140); a heater (200), the heater (200) being located in the heat preservation chamber (150), and the heater (200) being used to heat the crucible (300); The chamber includes a first chamber (1111) and a second chamber (1112). In the circumferential radial direction of the thermal field, the first chamber (1111) is located close to the center, and the second chamber (1112) is located away from the center. The thermal insulation particles are filled in the first chamber (1111).

2. The sandwich structure thermal field of a sapphire furnace according to claim 1, characterized in that: The interlayer unit (110) comprises: A switching plate (113) is located inside the chamber, and the switching plate (113) divides the chamber into a first chamber (1111) facing the inside of the thermal field and a second chamber (1112) facing the outside of the thermal field, wherein the thermal insulation particles are filled in the first chamber (1111).

3. The sandwich structure thermal field of a sapphire furnace according to claim 2, characterized in that: The chamber is a rectangular chamber, the switching plate (113) is of the same length as the chamber, and the interlayer unit (110) further comprises: A driving member, the driving member being located outside the heat-insulating structure (100), the driving member being connected to and acting on the switching plate (113), the driving member being used to drive the switching plate (113) so that the switching plate (113) has a first state and a second state: In the first state, the switching plate (113) is in a vertical state, so that the first cavity (1111) has the same width at the top and bottom, so that the distribution thickness of the heat-insulating particles is uniform; In the second state, the switching plate (113) is in an inclined state, so that the first cavity (1111) is wider at the bottom and narrower at the top, so that the distribution thickness of the heat-insulating particles is wider at the bottom and narrower at the top.

4. The sandwich structure thermal field of a sapphire furnace according to claim 3, characterized in that: The switching plate (113) includes: a first plate (1131), the first plate (1131) being located at the bottom of the switching plate (113), and a first end of the first plate (1131) being rotatably connected to the bottom surface of the interlayer unit (110); A second plate (1132), the second plate (1132) is located above the first plate (1131), the second plate (1132) is rotatably connected to the second end of the first plate (1131), and the top of the second plate (1132) passes through the top insulation plate (130) and extends to the outside of the insulation chamber (150).

5. The sandwich structure thermal field of a sapphire furnace according to claim 4, characterized in that: The height of the first plate (1131) is less than or equal to the width of the second cavity (1112).

6. The sandwich structure thermal field of a sapphire furnace according to claim 3, characterized in that: The driving member includes: A motor, wherein the motor is fixedly connected to the outer wall of the sapphire furnace; a tungsten wire rope, the tungsten wire rope being passed through the sapphire furnace and connected to the motor and the top of the switching plate (113); Or, the driving member includes: A motor, wherein the motor is fixedly connected to the inner wall of the sapphire furnace; a tungsten wire rope connected to the motor and the top of the switching plate (113); Or, the driving member includes: An electric cylinder, the electric cylinder being fixedly connected to the outer wall of the sapphire furnace; a tungsten wire rope, the tungsten wire rope being passed through the sapphire furnace and connected to the electric cylinder and the top of the switching plate (113); Or, the driving member includes: An electric cylinder fixedly connected to the inner wall of the sapphire furnace; a tungsten wire rope connected to the electric cylinder and the top of the switching plate (113); Or, the driving member includes: An electric cylinder, the electric cylinder being fixedly connected to the outer wall of the sapphire furnace; A connecting rod, the connecting rod passing through the sapphire furnace and connected to the electric cylinder and the top of the switching plate (113); Or, the driving member includes: An electric cylinder fixedly connected to the inner wall of the sapphire furnace; A connecting rod is connected to the electric cylinder and the top of the switching plate (113).

7. The sandwich structure thermal field of a sapphire furnace according to claim 3, characterized in that: A through hole (131) is provided on the top surface insulation plate (130), and the through hole (131) is used to allow a seed crystal to pass through. One of the interlayer units (110) further includes a cover plate assembly (114), and the cover plate assembly (114) is used to cooperate with the switching plate (113) to form a first position and a second position, so that the cover plate assembly (114) is blocked in the through hole (131) or separated from the through hole (131): When the cover plate assembly (114) is in the first position, the switching plate (113) is in the first state, and the switching plate (113) drives the cover plate assembly (114) to move so that the cover plate assembly (114) covers the through hole (131); When the cover plate assembly (114) is in the second position, the switching plate (113) is in the second state, and the switching plate (113) resets the cover plate assembly (114) so that the cover plate assembly (114) is separated from the through hole (131).

8. The sandwich structure thermal field of a sapphire furnace according to claim 7, characterized in that: The cover plate assembly (114) includes: a cover plate (1142), the cover plate (1142) being used to cooperate with the through hole (131); An elastic member (1141), the elastic member (1141) is connected between the cover plate (1142) and the top surface insulation plate (130), the elastic member (1141) is elastic, and the elastic member (1141) is used to cooperate with the switching plate (113) to enable the cover plate (1142) to cover the through hole (131) or to be separated from the through hole (131).

9. The sandwich structure thermal field of a sapphire furnace according to claim 8, characterized in that: The top of the switching plate (113) is provided with an inclined surface (1133), and the inclined surface (1133) is used to slide and cooperate with the elastic member (1141), so that the elastic member (1141) slides on the inclined surface (1133) to switch between the first position and the second position.

10. A method for applying a sandwich structure thermal field of a sapphire furnace, characterized in that: A sandwich structure thermal field suitable for a sapphire furnace according to any one of claims 2 to 9, comprising: In the cooking stage, the switching plate (113) is placed in a first state; During the crystal growth stage, the switching plate (113) is placed in the second state.

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