Quantum fluorescence detector
By introducing an ultralens structure into the quantum fluorescence detector, the problems of process compatibility and cost are solved, and higher detection sensitivity and lower manufacturing costs are achieved.
Patent Information
- Application Number
- CN202510511614.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-22
- Publication Date
- 2025-08-19
AI Technical Summary
Existing quantum fluorescence detectors have poor process compatibility and high manufacturing costs.
The quantum fluorescence detector design includes a semiconductor substrate, photodiode and ultralens structure, and the incident fluorescence is regulated through a sub-wavelength-scale micro-nano structure to converge as much as possible on the photodiode to improve detection sensitivity.
It improves the detection sensitivity and working performance of the quantum fluorescence detector, while enhancing compatibility with CMOS processes and reducing manufacturing costs.
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Figure CN120512960A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of photoelectric detection technology, and in particular to a quantum fluorescence detector. Background Art
[0002] A quantum fluorescence detector is a highly sensitive device that combines quantum technology with fluorescence detection. It is primarily used to detect, identify, or image fluorescence signals. The core of a quantum fluorescence detector is to utilize quantum effects to enhance the performance of traditional fluorescence technology.
[0003] However, existing ion fluorescence detectors have poor process compatibility and high manufacturing costs. Summary of the Invention
[0004] The present invention aims to provide a quantum fluorescence detector for improving the compatibility of the quantum fluorescence detector with CMOS technology, increasing the yield of the quantum fluorescence detector, and reducing the manufacturing cost of the quantum fluorescence detector.
[0005] To achieve the above objectives, the present invention provides a quantum fluorescence detector comprising: a semiconductor substrate, a photodiode, a cladding, and a superlens structure. The photodiode is disposed on the semiconductor substrate. The cladding covers the semiconductor substrate and the photodiode. The superlens structure is disposed on the portion of the cladding corresponding to the photodiode. The superlens structure comprises a plurality of superlenses spaced and cascaded along the thickness direction of the semiconductor substrate. Furthermore, in the same superlens structure, the superlens located on the upper layer is used to unidirectionally transmit the incident fluorescence and focus it onto the next adjacent superlens layer; and the superlens located on the bottom layer transmits the incident fluorescence unidirectionally and focuses it onto the photodiode.
[0006] Using the above technical solution, the quantum fluorescence detector provided by the present invention includes a metalens structure. Based on semiconductor optics and nanotechnology, it uses subwavelength-scale micro-nanostructures to control incident fluorescence, thereby converging as much fluorescence as possible onto a photodiode, thereby improving the detection sensitivity of the quantum fluorescence detector. Furthermore, the metalens structure includes multiple layers of metalens spaced and cascaded along the thickness of the semiconductor substrate, which facilitates converging more fluorescence onto the photodiode, further improving the detection sensitivity of the quantum fluorescence detector and enhancing its performance.
[0007] In one example, at least one photodiode is an avalanche photodiode. With this configuration, the photodiode can utilize the avalanche multiplication effect of carriers to amplify the photoelectric signal, further improving the detection sensitivity of the quantum fluorescence detector and enhancing the performance of the quantum fluorescence detector.
[0008] In one example, the semiconductor substrate is a silicon substrate.
[0009] In one example, at least one photodiode is a silicon-based photodiode. With this configuration, when the quantum fluorescence detector provided by the present invention is manufactured based on a silicon semiconductor substrate and the photodiode is also manufactured based on silicon, it can be manufactured using a traditional, more mature CMOS process. This improves the compatibility of the quantum fluorescence detector with the CMOS process and increases the yield of the quantum fluorescence detector. Furthermore, it reduces the manufacturing cost of the quantum fluorescence detector, facilitating chip-scale applications of ion trap systems.
[0010] In one example, at least one photodiode is a surface-incident avalanche photodiode. This configuration allows incident fluorescence to enter the absorption layer directly from the top of the device, reducing light loss and improving detection sensitivity. Furthermore, compared to edge-incident avalanche photodiodes, surface-incident avalanche photodiodes have a more compact structure, which facilitates increased integration of quantum fluorescence detectors.
[0011] In one example, the top metalens of the metalens structure is continuous with the cladding. This arrangement allows the metalens at the top to be formed by etching the cladding, eliminating the need for deposition and etching processes to form the metalens at the top with additional materials. This simplifies the manufacturing process of the quantum fluorescence detector, improves manufacturing efficiency, and reduces manufacturing costs.
[0012] In one example, in a metalens structure, except for the top metalens, all other metalens have interfaces with the cladding. This arrangement reduces the interference of the cladding on the transmission and convergence of fluorescence by the remaining metalens, further improving the sensitivity and performance of the quantum fluorescence detector.
[0013] In one example, in a metalens structure, except for the metalens located on the top layer, the material of the remaining metalens is different from the material of the cladding layer.
[0014] In one example, in the superlens structure, except for the superlens located on the top layer, the material of the remaining superlenses includes silicon nitride.
[0015] In one example, the quantum fluorescence detector further includes a first contact structure and a first extraction electrode disposed within the cladding. The first contact structure is in electrical contact with the photodiode. The first extraction electrode is in electrical contact with the first contact structure. The first contact structure is made of tungsten. The first extraction electrode is made of aluminum and / or copper.
[0016] In one example, the quantum fluorescence detector further includes a surface ion trap electrode disposed on the cladding, the surface ion trap electrode being electrically connected to the photodiode, and the material of the surface ion trap electrode including chromium and / or gold.
[0017] In one example, the cladding material includes silicon dioxide. This configuration allows the silicon dioxide material to have high transmittance to fluorescent light, such as visible light or ultraviolet light, allowing more fluorescent light to be focused on the photodiode, further increasing the sensitivity of the quantum fluorescence detector and improving its performance.
[0018] In one example, the quantum fluorescence detector is used to detect at least ultraviolet light and / or blue light. This configuration improves the detection accuracy of ultraviolet and blue light, as these are weaker than fluorescent light, such as infrared light. When the quantum fluorescence detector provided by the present invention is used to detect at least ultraviolet and / or blue light, it can improve the detection precision and accuracy of these two types of fluorescence. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:
[0020] Figure 1 A schematic longitudinal cross-sectional view of a first structure of a quantum fluorescence detector provided by an embodiment of the present invention;
[0021] Figure 2 A schematic longitudinal cross-sectional view of a second structure of a quantum fluorescence detector provided by an embodiment of the present invention;
[0022] Figure 3 Schematic diagram of the transmission and focusing principle of the metalens in an embodiment of the present invention;
[0023] Figure 4 Schematic diagram of the transmission and focusing principles between the multilayer metalenses in an embodiment of the present invention.
[0024] Reference numerals: 11 is a semiconductor substrate, 12 is a photodiode, 13 is a cladding layer, 14 is a super lens structure, 15 is a super lens, 16 is a first contact structure, 17 is a first extraction electrode, and 18 is a surface ion trap electrode. DETAILED DESCRIPTION
[0025] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present invention. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present invention.
[0026] The accompanying drawings illustrate various structural schematics according to embodiments of the present invention. These figures are not drawn to scale; certain details are exaggerated and may be omitted for clarity. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positions, are merely exemplary and may deviate in practice due to manufacturing tolerances or technical limitations. Those skilled in the art may design regions / layers with different shapes, sizes, and relative positions as needed.
[0027] In the context of the present invention, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or an intervening layer / element may exist between them. Furthermore, if a layer / element is "on" another layer / element in one orientation, it may be "below" the other layer / element when the orientation is reversed. To further clarify the technical problems, technical solutions, and beneficial effects of the present invention, the present invention is further described below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are intended solely to illustrate the present invention and are not intended to limit the present invention.
[0028] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined. "Several" means one or more, unless otherwise specifically defined.
[0029] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and may encompass internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.
[0030] Quantum fluorescence detectors are highly sensitive devices that combine quantum technology with fluorescence detection. They are primarily used to detect, identify, or image fluorescence signals. Their core principle is to leverage quantum effects to enhance the performance of traditional fluorescence technology. However, existing quantum fluorescence detectors have limited process compatibility and high manufacturing costs.
[0031] To address the aforementioned technical issues, embodiments of the present invention provide a quantum fluorescence detector. The quantum fluorescence detector includes a photodiode and a superlens structure. The superlens structure comprises multiple layers of superlenses spaced and cascaded along the thickness of a semiconductor substrate to enhance the detection sensitivity of the quantum fluorescence detector.
[0032] In the first aspect, the quantum fluorescence detector provided by the embodiment of the present invention is as follows. Figures 1 to 4 As shown, the quantum fluorescence detector includes: a semiconductor substrate 11, a photodiode 12, a cladding 13, and a super lens structure 14. The photodiode 12 is disposed on the semiconductor substrate 11. The cladding 13 covers the semiconductor substrate 11 and the photodiode 12. The super lens structure 14 is disposed on the portion of the cladding 13 corresponding to the photodiode 12.
[0033] When the above technical solution is adopted, Figure 1 As shown, the quantum fluorescence detector provided in the embodiment of the present invention includes a super lens structure 14, which is based on semiconductor optics and nanotechnology, and regulates the incident fluorescence through a sub-wavelength-scale micro-nano structure, so as to converge as much fluorescence as possible onto the photodiode 12, thereby improving the detection sensitivity of the quantum fluorescence detector.
[0034] In actual application, the embodiment of the present invention does not specifically limit the types of fluorescence that can be detected by the provided quantum fluorescence detector, and can be set according to actual needs.
[0035] Exemplarily, quantum fluorescence detectors can be used to detect at least ultraviolet light and / or blue light. It should be noted that in the field of photoelectric detection, active devices used in visible light (especially blue light) and ultraviolet light bands are in an earlier stage of development. Especially in silicon-based material systems, it is more difficult to achieve single-photon efficient detection of blue light and ultraviolet light. The structure provided by the embodiment of the present invention can greatly enhance photon absorption, improve the device response while maintaining the bandwidth without decreasing, and can improve the detection accuracy of ultraviolet fluorescence and blue fluorescence, thereby improving detection accuracy. Of course, the structure provided by the embodiment of the present invention is also applicable to other bands.
[0036] Of course, the quantum fluorescence detector provided by the embodiment of the present invention can also be used to detect red light, yellow light or green light.
[0037] In addition, the embodiment of the present invention does not specifically limit the structure of the semiconductor substrate. The semiconductor substrate can be a substrate made of any semiconductor material, such as a silicon substrate, a silicon-on-insulator, etc. Optionally, the semiconductor substrate is a silicon substrate.
[0038] For the above-mentioned photodiode, the photodiode is arranged on a semiconductor substrate. The photodiode includes a PN junction. In addition, in the actual application process, as Figure 1As shown, the quantum fluorescence detector may further include a first contact structure 16 and a first extraction electrode 17 disposed within the cladding 13. The first contact structure 16 is in electrical contact with the photodiode 12. The first extraction electrode 17 is in electrical contact with the first contact structure 16. When the quantum fluorescence detector provided in the embodiment of the present invention is in operation, a suitable high reverse bias is applied to the PN junction included in the photodiode 12 via the first contact structure 16 and the first extraction electrode 17, so that the photogenerated carriers in the depletion layer are accelerated by the strong electric field and obtain sufficiently high kinetic energy. These carriers collide with the lattice to generate new electron-hole pairs, which in turn continuously cause new collision ionization, resulting in avalanche multiplication of carriers and current gain.
[0039] The materials of the first contact structure and the first extraction electrode may include any conductive material as long as it can be applied to the quantum fluorescence detector provided by the embodiment of the present invention.
[0040] Exemplarily, the material of the first contact structure may include tungsten.
[0041] Exemplarily, the material of the first extraction electrode may include aluminum and / or copper.
[0042] As for the type of photodiode, the quantum fluorescence detector provided by the embodiment of the present invention includes at least one photodiode which can be an avalanche photodiode, which can utilize the avalanche multiplication effect of carriers to amplify the photoelectric signal, which can further improve the detection sensitivity of the quantum fluorescence detector and improve the working performance of the quantum fluorescence detector.
[0043] Secondly, in terms of material, at least one photodiode can be a silicon-based photodiode. With this configuration, the quantum fluorescence detector provided by the embodiments of the present invention can be manufactured based on a silicon substrate, and the photodiode can also be manufactured based on silicon materials. In this case, it can be manufactured using traditional, more mature CMOS processes, improving the compatibility of the quantum fluorescence detector with CMOS processes and increasing the yield of the quantum fluorescence detector. Furthermore, the manufacturing cost of the quantum fluorescence detector can be reduced, facilitating the chip-level application of ion trap systems.
[0044] Of course, the photodiode can also be manufactured based on other semiconductor materials, as long as it can be applied to the quantum fluorescence detector provided by the embodiment of the present invention.
[0045] In addition, at least one photodiode may be an edge-incident avalanche photodiode, a surface-incident avalanche photodiode, or the like, as long as the sensitivity of the quantum fluorescence detector provided by the embodiment of the present invention can be improved.
[0046] It is worth noting that when at least one photodiode is a surface-incident avalanche photodiode, such as Figure 1 and Figure 2 As shown in the figure, since the surface-incident avalanche photodiode is an avalanche photodetector in which light is incident vertically from the device surface, the incident fluorescence can directly enter the absorption layer from the top of the device, reducing light loss. Moreover, compared with the edge-incident avalanche photodiode, the surface-incident avalanche photodiode has a more compact structure, which is conducive to improving the integration of quantum fluorescence detectors. In addition, as Figure 3 As shown, due to the focusing characteristics of the metalens 15, its focal point will shift in the x-direction as the incident light tilt angle θ changes, but the light will always be focused on the same focal plane (set as the photodiode 12). Therefore, based on the phase modulation principle of the metalens 15, the size and period of the cells are precisely designed to ensure that as much fluorescence as possible is focused on the photodiode 12, thereby improving detection sensitivity.
[0047] For the above cladding, if Figure 2 As shown, the cladding layer 13 is used to isolate the photodiode from the semiconductor substrate 11, preventing light from the photodiode from leaking into the semiconductor substrate 11, thereby improving the detection sensitivity and performance of the quantum fluorescence detector. At the same time, the cladding layer 13 isolates the photodiode from the superlens structure 14, ensuring a suitable distance between the two. This allows the focal plane of the superlens structure 14 to be on the photodiode, which helps to maximize the focus of fluorescence on the photodiode 12 and improve the detection sensitivity of the quantum fluorescence detector.
[0048] The material of the cladding layer may include any light-transmitting material, and its specific type may be determined according to the wavelength of the fluorescence to be detected by the quantum fluorescence detector and actual needs, and is not specifically limited here.
[0049] For example, the cladding material may include silicon dioxide and / or silicon nitride. Because silicon dioxide has high transmittance to fluorescent light, such as visible light or ultraviolet light, the inclusion of silicon dioxide in the cladding facilitates focusing more fluorescent light onto the photodiode, further increasing the sensitivity of the quantum fluorescence detector and improving its performance.
[0050] For the above-mentioned super lens structure, Figure 1 and Figure 2 As shown, the super lens structure 14 is provided on the portion of the cladding layer 13 corresponding to the photodiode 12 . The super lens structure 14 is used to focus the incident fluorescence onto the photodiode 12 .
[0051] From a structural perspective, Figure 1 As shown, the metalens structure 14 may include only a single layer of metalens 15. Alternatively, as shown in FIG. Figure 2 and Figure 4As shown, the metalens structure 14 also includes multiple layers of metalens 15 spaced apart and cascaded along the thickness direction of the semiconductor substrate 11. Furthermore, within the same metalens structure 14, the upper metalens 15 is used to unidirectionally transmit and focus incident fluorescence onto the adjacent metalens 15 in the next layer; and the metalens 15 in the bottom layer transmits and focuses incident fluorescence onto the photodiode 12 in a unidirectional manner. This arrangement facilitates the convergence of more fluorescence onto the photodiode 12, further improving the detection sensitivity and performance of the quantum fluorescence detector.
[0052] In actual applications, when the metalens structure includes multiple layers of metalens spaced and cascaded along the thickness direction of the semiconductor substrate, the upper and lower adjacent layers of metalens can have characteristic phase delay distributions by setting the parameters such as the size, spacing, and period of the nanocolumns included in the metalens according to the metalens phase modulation principle. The two layers are interrelated to ensure that the incident light at different positions can be propagated and focused according to the established design. Among them, the multi-layer cascaded metalens setting enhances the focusing intensity of fluorescence, reduces the interference of reflection and multiple scattering of the incident light wave, and to a certain extent increases the possibility of secondary absorption detection, which is conducive to improving detection efficiency. The number of layers of metalens included in the metalens structure can be set according to actual needs and is not specifically limited here.
[0053] Specifically, the core principle of the metalens is to introduce a specific phase delay through nanostructure units (meta-atoms) to achieve wavefront control. The phase distribution can be designed according to the following formula:
[0054]
[0055] Where φ(x,y) is the phase value of any point on the metalens, (x,y) is the coordinate of any point on the metalens relative to the center of the metalens, λ is the wavelength of the incident light, and f is the focal length of the metalens.
[0056] According to the Fermat principle, the phase difference between any two optical paths is zero. Therefore, each micro-nano unit must compensate for the phase difference between the optical path from its position (x, y) to the focal spot and the optical path from the lens center to the focal spot. Target phase control is achieved by changing the height and radius of the micro-nano unit.
[0057] The determination of parameters such as the size, spacing, and period of single-layer metalens nanopillars can be based on electromagnetic theory, equivalent medium models, and numerical simulation optimization. Some parameters can be derived through parameter approximation. The following are the theoretical basis and design methods for key parameters:
[0058] 1) Determination of period (P):
[0059] The nanopillar period needs to meet the subwavelength condition, that is, the spacing between adjacent units is small enough to allow only zero-order diffraction (transmission / reflection main mode) to exist and suppress higher-order diffraction. See the following formula:
[0060]
[0061] where n eff is the equivalent refractive index of the substrate or surrounding medium (e.g. n = 1 for air and n = 1.45 for SiO2 substrate). If the metalens works in transmission mode and the substrate is SiO2, then P <n SiO2
[0062] 2) Determination of diameter (D) and height (H):
[0063] When light passes through the nanorods, its phase delay is determined by the equivalent refractive index n eff and the structure height H, the following formula can be obtained according to the propagation phase control principle:
[0064]
[0065] where n eff is the equivalent refractive index of the nanorod, which is related to the diameter D and period P; n0 is the refractive index of the substrate. There are two key steps in the specific design:
[0066] ① According to the Effective Medium Theory (EMT): For the structure of D<<P, the nanorod array can be regarded as a uniform medium, and its equivalent refractive index n eff Fill factor Approximate calculation:
[0067]
[0068] ② To achieve the 0-2π phase coverage condition, the following conditions must be met:
[0069]
[0070] where n eff,max and n eff,min are the equivalent refractive index extremes when the diameter changes.
[0071] In addition, according to the geometric phase (Pancharatnam-Berry phase) control principle, for anisotropic structures (such as elliptical or rotated nanorods), the phase delay is determined by the rotation angle θ:
[0072] φ=2σθ
[0073] where σ is the spin angular momentum of the incident light (±1 corresponds to left-handed or right-handed circularly polarized light). The phase is independent of the structure size; simply rotating the unit can cover phases from 0 to 2π.
[0074] 3) Half-wave condition of height (H):
[0075] To maximize the phase control range, H is usually designed to be the half-wavelength height in the material:
[0076]
[0077] 4) Spacing (S=PD) limitation:
[0078] ① Processing constraints: The minimum spacing must meet the resolution of lithography technology (for example, electron beam lithography usually requires S>20nm).
[0079] ② Electromagnetic coupling suppression: Too small a spacing will lead to near-field coupling between adjacent nanopillars, destroying phase independence. Empirically, the following conditions must be met:
[0080]
[0081] For example, Figure 1 and Figure 2 As shown, in the metalens structure 14, the metalens 15 at the top layer can be continuous with the cladding 13. This configuration allows the metalens 15 at the top layer to be formed by etching the cladding 13, eliminating the need to use deposition and etching processes to form the metalens 15 at the top layer using additional materials. This simplifies the manufacturing process of the quantum fluorescence detector, improves manufacturing efficiency, and reduces manufacturing costs.
[0082] Of course, in the metalens structure, the metalens located at the top layer may also have an interface with the cladding. In this case, the metalens and the cladding can be formed separately in different operation steps, which facilitates the selection of appropriate materials and / or methods for manufacturing the metalens and the cladding separately according to different actual application requirements, thereby improving the applicability of the quantum fluorescence detector provided by the embodiment of the present invention.
[0083] In addition, in actual application, when the metalens structure includes multiple layers of metalens arranged at intervals, the materials of different layers of metalens can be the same or different.
[0084] For example, Figure 2 As shown, in the metalens structure 14, except for the metalens 15 located on the top layer, the remaining metalens 15 have interfaces with the cladding 13. This arrangement reduces the interference of the cladding 13 on the transmission and convergence of fluorescence by the remaining metalens 15, further improving the sensitivity of the quantum fluorescence detector and enhancing its performance.
[0085] Alternatively, in a metalens structure, except for the metalens at the top layer, the remaining metalens can be continuous with the cladding layer. In this case, other materials can be filled between adjacent nanopillars in the remaining metalens layers to achieve the transmission and focusing effects of the metalens.
[0086] Furthermore, in a metalens structure, except for the metalens at the top layer, the material of the remaining metalens can be different from the material of the cladding. The application principle of the beneficial effect in this case can be referred to the application principle of the beneficial effect of the interface between the remaining metalens and the cladding described above, and will not be repeated here.
[0087] Among them, when the material of the remaining metalens is different from the material of the cladding, the materials of the remaining metalens can be set according to actual needs and are not specifically limited here.
[0088] For example, in a metalens structure, except for the metalens on the top layer, the materials of the remaining metalens may include silicon nitride, which is beneficial for ensuring high transparency in the visible wavelength range and reducing light loss.
[0089] In one example, Figure 1 and Figure 2 As shown, the quantum fluorescence detector further includes a surface ion trap electrode 18 disposed on the cladding 13 . The surface ion trap electrode 18 is electrically connected to the photodiode 12 .
[0090] The surface ion trap electrode 18 may be made of any conductive material such as chromium and / or gold.
[0091] While the above description does not provide detailed technical details regarding patterning and etching of each layer, those skilled in the art will appreciate that various technical means can be employed to form layers, regions, and the like in desired shapes. Furthermore, those skilled in the art may devise methods that differ from those described above to form the same structure. Furthermore, while each embodiment has been described separately, this does not mean that the measures in each embodiment cannot be advantageously combined.
[0092] The above describes the embodiments of the present invention. However, these embodiments are merely for illustrative purposes and are not intended to limit the scope of the present invention. The scope of the present invention is defined by the appended claims and their equivalents. Various substitutions and modifications may be made by those skilled in the art without departing from the scope of the present invention, and such substitutions and modifications are intended to fall within the scope of the present invention.
Claims
1. A quantum fluorescence detector, characterized in that: include: semiconductor substrates; a photodiode, disposed on the semiconductor substrate; a cladding layer covering the semiconductor substrate and the photodiode; A superlens structure is provided on a portion of the cladding corresponding to the photodiode; the superlens structure comprises a plurality of superlenses spaced apart and cascaded along the thickness direction of the semiconductor substrate; in the same superlens structure, the superlens located on the upper layer is used to unidirectionally transmit the incident fluorescence and focus it onto the superlens of the next adjacent layer; and the superlens located on the bottom layer transmits the incident fluorescence unidirectionally and focuses it onto the photodiode.
2. The quantum fluorescence detector according to claim 1, characterized in that At least one of the photodiodes is an avalanche photodiode; And / or, the semiconductor substrate is a silicon substrate.
3. The quantum fluorescence detector according to claim 1 or 2, characterized in that At least one of the photodiodes is a surface-incident avalanche photodiode; And / or, at least one of the photodiodes is a silicon-based photodiode.
4. The quantum fluorescence detector according to claim 1, characterized in that In the super lens structure, the super lens located at the top layer is integrally continuous with the cladding.
5. The quantum fluorescence detector according to claim 1, characterized in that In the superlens structure, except for the superlens located on the top layer, interfaces are formed between the remaining superlenses and the cladding.
6. The quantum fluorescence detector according to claim 1, characterized in that In the superlens structure, except for the superlens located on the top layer, the material of the remaining superlenses is different from the material of the cladding.
7. The quantum fluorescence detector according to claim 6, characterized in that In the super lens structure, except for the super lens located on the top layer, the materials of the remaining super lenses include silicon nitride.
8. The quantum fluorescence detector according to claim 1, characterized in that The quantum fluorescence detector further includes a first contact structure and a first extraction electrode disposed in the cladding; the first contact structure is in electrical contact with the photodiode; the first extraction electrode is in electrical contact with the first contact structure; the material of the first contact structure includes tungsten; the material of the first extraction electrode includes aluminum and / or copper; And / or, the quantum fluorescence detector further comprises a surface ion trap electrode arranged on the cladding; the surface ion trap electrode is electrically connected to the photodiode; the material of the surface ion trap electrode comprises chromium and / or gold.
9. The quantum fluorescence detector according to claim 1, characterized in that The material of the cladding layer includes silicon dioxide.
10. The quantum fluorescence detector according to claim 1, characterized in that The quantum fluorescence detector is used at least to detect ultraviolet light and / or blue light.