Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

The present invention is provided with: a processing chamber for processing a substrate; a dielectric plate provided in the processing chamber; an electromagnetic wave supply unit that supplies electromagnetic waves to the dielectric plate; a heating medium supply unit capable of supplying a heating medium to the dielectric plate; and a control unit configured so as to be able to control the supply of the heating medium to the dielectric plate if the temperature of the dielectric plate is equal to or less than a predetermined temperature before processing the substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As an apparatus for manufacturing semiconductor devices, there is an apparatus that uses plasma generated by electromagnetic waves to process substrates (for example, Patent Document 1). In addition, when processing multiple substrates, it is required to make the processing uniform among the multiple substrates (for example, Patent Document 2).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2022-21458

[0006] Patent Document 2: Japanese Patent Application Laid-Open No. 2020-25024 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] When processing multiple substrates, substrates may need to be replaced. However, due to factors such as a drop in chamber temperature during replacement, the processing environment may change before and after the replacement. This can result in variations in film quality between substrates.

[0009] The present disclosure provides a technology that can process film quality uniformly between substrates even if the processing environment between substrates varies.

[0010] Means for solving problems

[0011] According to one embodiment of the present disclosure, a technology is provided, comprising:

[0012] a processing chamber for processing a substrate;

[0013] a dielectric plate disposed in the processing chamber;

[0014] an electromagnetic wave supplying unit that supplies electromagnetic waves to the dielectric plate;

[0015] a heating medium supply unit capable of supplying a heating medium to the dielectric plate; and

[0016] The control unit is configured to control the supply of the heating medium to the dielectric plate if the temperature of the dielectric plate is equal to or lower than a predetermined temperature before processing the substrate.

[0017] Effects of the Invention

[0018] According to the present technology, it is possible to provide a technology capable of uniformly processing film quality between substrates even if the processing environment between substrates varies. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to a first embodiment of the present disclosure.

[0020] Figure 2 (A) is an explanatory diagram showing a schematic configuration example of a first gas supply unit according to a first embodiment of the present disclosure. Figure 2 (B) is an explanatory diagram showing a schematic configuration example of the second gas supply unit according to the first embodiment of the present disclosure. Figure 2 (C) is an explanatory diagram showing a schematic configuration example of the third gas supply unit according to the first embodiment of the present disclosure.

[0021] Figure 3 This is an explanatory diagram for explaining the controller according to the first embodiment of the present disclosure.

[0022] Figure 4 This is an explanatory diagram for explaining a table included in the controller according to the first aspect of the present disclosure.

[0023] Figure 5 This is an explanatory diagram for explaining a table included in the controller according to the first aspect of the present disclosure.

[0024] Figure 6 This is a flowchart illustrating the substrate processing step according to the first embodiment of the present disclosure.

[0025] Figure 7 This is a flowchart illustrating the film forming process according to the first embodiment of the present disclosure.

[0026] Figure 8 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to a second embodiment of the present disclosure.

[0027] Figure 9 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to a second embodiment of the present disclosure.

[0028] Figure 10 It is an explanatory diagram showing a schematic configuration example of a gas supply unit according to a second embodiment of the present disclosure.

[0029] Figure 11 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to a third aspect of the present disclosure. DETAILED DESCRIPTION

[0030] The following mainly refers to Figures 1 to 11The present disclosure is described. The drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings may not necessarily be consistent with actual conditions. Furthermore, the dimensional relationships and proportions of the elements shown in the drawings may not necessarily be consistent across multiple drawings.

[0031] [First aspect of the present disclosure]

[0032] Main reference Figures 1 to 7 A first aspect of the present disclosure will be described.

[0033] Figure 1 It is a cross-sectional view showing a structural example of a substrate processing apparatus.

[0034] like Figure 1 As shown, the substrate processing apparatus includes a container 202. Container 202 is, for example, a sealed container having a circular, flat cross-section. Container 202 is made of a metal material, such as aluminum (Al) or stainless steel (SUS). Within container 202 is a processing chamber 201, which forms a processing space 205 for processing substrates S, such as silicon wafers.

[0035] A substrate loading / unloading port 148 is provided on the side of the container 202, adjacent to the gate valve 149. Substrates S are loaded and unloaded through the substrate loading / unloading port 148. The space adjacent to the substrate loading / unloading port 148 is referred to as a transfer space 206. A plurality of lift pins 207 are provided at the bottom of the container 202. An exhaust pipe 272, described below, is also provided.

[0036] A substrate support unit 210 supporting the substrate S is disposed in the container 202. The substrate support unit 210 mainly includes a support surface 211 supporting the substrate S, a substrate support table 212 having the support surface 211 on its surface, and a heater 213 serving as a heating unit disposed within the substrate support table 212. Through holes 214 for the lift pins 207 to pass through are provided in the substrate support table 212 at positions corresponding to the respective lift pins 207.

[0037] Furthermore, substrate support table 212 includes a temperature measuring device 216, which is a first temperature measuring device for measuring the temperature of heater 213. Temperature measuring device 216 is connected to temperature measuring unit 221, which is a first temperature measuring unit, via wiring 220. Heater 213 is connected to wiring 222 for supplying power. Wiring 222 is connected to heater control unit 223.

[0038] The temperature measuring unit 221 and the heater control unit 223 are electrically connected to a controller 400 described later. The controller 400 sends control information to the heater control unit 223 based on the temperature information measured by the temperature measuring unit 221. The heater control unit 223 controls the heater 213 by referring to the received control information.

[0039] The substrate support table 212 is supported by a shaft 217. The shaft 217 passes through the bottom of the container 202 and is connected to a lift 218 outside the container 202. The lift 218 raises and lowers or rotates the shaft 217. The lower end of the shaft 217 is covered by a bellows 219, thereby maintaining an airtight interior of the processing space 205.

[0040] When the substrate S is transported, the substrate support table 212 is lowered to a transport position where the support surface 211 faces the substrate loading / unloading port 148. Figure 1 As shown, the substrate S is raised until it reaches the processing position in the processing space 205.

[0041] Next, the electromagnetic wave supply unit 250 will be described. The electromagnetic wave supply unit 250 is provided above the processing space 205 .

[0042] A container 251, which constitutes the electromagnetic wave supply unit 250, is placed on the top plate 202a of the container 202. A dielectric plate 252, made of a dielectric, is placed between the container 251 and the substrate support 212. The dielectric plate 252 is configured to have a hole formed in the upper wall of the top plate 202a and to block the hole. A slit plate 256 is placed above the dielectric plate 252. The slit plate 256 is provided with a plurality of radiation holes. The main surface of the dielectric plate 252 is configured to be parallel to the main surface (surface) of the substrate S supported by the substrate support 210. A second temperature measuring device, namely a temperature measuring device 235, capable of measuring the temperature of the dielectric plate 252 is placed near the dielectric plate 252, for example, on the top plate 202a. The temperature measuring device 235 is connected to a second temperature measuring unit, namely a temperature measuring unit 237.

[0043] A space 255 is defined between the upper surface of the slot plate 256 and the inner wall of the container 251. The container 251 is connected to a waveguide 258. The waveguide 258 is connected to a microwave supply source 257, and microwaves, which are electromagnetic waves generated by the microwave supply source 257, are supplied to the space 255 via the waveguide 258. The container 251 and the waveguide 258 are collectively referred to as a microwave supply unit. The microwave supply source 257 may also be included in the microwave supply unit.

[0044] A gas supply pipe 240 is provided in the container 202 to supply gas to the bottom of the dielectric plate 252. A circumferential gas supply hole 231 is provided at the tip of the gas supply pipe 240 along the side wall of the container 202. Gas passing through the gas supply pipe 240 is supplied from the gas supply hole 231 toward the bottom of the dielectric plate 252.

[0045] The gas supply hole 231 is configured to communicate with a first gas supply unit 241, a second gas supply unit 242, and a third gas supply unit 243, which will be described later. Figure 1Only one gas supply hole 231 is shown in FIG. 1 , but supply holes may be provided for each gas supply portion. A first gas supply pipe 241 a , a second gas supply pipe 242 a , and a third gas supply pipe 243 a , which will be described later, are connected to the gas supply pipe 240 .

[0046] use Figure 2 (A) The first gas supply unit 241 will be described.

[0047] The first gas supply pipe 241a is provided with a first gas source 241b, a mass flow controller (MFC) 241c as a flow controller (flow control unit), and a valve 241d as an opening and closing valve in this order from the upstream direction.

[0048] The first gas source 241b is a source of a first gas (also referred to as "first-element-containing gas") containing a first element. The first-element-containing gas is a raw material gas, i.e., one of the process gases. Here, the first element is, for example, silicon (Si). That is, the first-element-containing gas is, for example, a silicon-containing gas. Specifically, dichlorosilane (SiH2Cl2, also referred to as DCS) gas is used as the silicon-containing gas. The first gas supply unit 241 (also referred to as the silicon-containing gas supply unit) is primarily composed of the first gas supply pipe 241a, the MFC 241c, and the valve 241d.

[0049] use Figure 2 (B) The second gas supply unit 242 will be described.

[0050] The second gas supply pipe 242a is provided with a second gas source 242b, an MFC 242c, and a valve 242d in this order from the upstream direction.

[0051] The second gas source 242b is a source of a second gas containing a second element (hereinafter also referred to as "second element-containing gas"). The second element-containing gas is one of the process gases. In addition, the second element-containing gas can be considered as a reaction gas or a reforming gas.

[0052] Here, the second-element-containing gas contains a second element different from the first element. The second element can be, for example, one of oxygen (O), nitrogen (N), and carbon (C). In the present technology, the second-element-containing gas is, for example, a nitrogen-containing gas. Specifically, ammonia (NH3) gas is used as the nitrogen-containing gas. The second gas supply unit 242 (also referred to as the reaction gas supply unit) is primarily composed of the second gas supply pipe 242a, the MFC 242c, and the valve 242d.

[0053] use Figure 2 (C) The third gas supply unit 243 is described.

[0054] The third gas supply pipe 243 a is provided with a third gas source 243 b , an MFC 243 c , and a valve 243 d serving as an opening and closing valve in this order from the upstream direction.

[0055] The third gas source 243b is an inert gas source. The inert gas is, for example, nitrogen (N2) gas. A heating mechanism 243e capable of heating the gas passing through the third gas supply pipe 243a may also be provided in the third gas supply pipe 243a. The third gas supply unit 243 primarily comprises the third gas supply pipe 243a, the MFC 243c, and the valve 243d. The third gas supply unit 243 supplies the heating medium described below and is therefore also referred to as the heating medium supply unit.

[0056] The inert gas supplied from the third gas source (inert gas source) 243b functions as a purge gas during the substrate processing step to purge gas remaining in the container 202. The inert gas functions as a heating medium capable of heating the dielectric plate 252 during the temperature adjustment step described below.

[0057] In this specification, any combination of the first gas supply unit 241, the second gas supply unit 242, and the third gas supply unit 243, or the first gas supply unit 241, the second gas supply unit 242, and the third gas supply unit 243 are collectively referred to as a gas supply unit. Furthermore, since a heating medium may be supplied from a gas supply unit, any combination of the first gas supply unit 241, the second gas supply unit 242, and the third gas supply unit 243, or the first gas supply unit 241, the second gas supply unit 242, and the third gas supply unit 243 may also be collectively referred to as a heating medium supply unit.

[0058] The processing space 205 is connected to the exhaust pipe 272. The exhaust pipe 272 is connected to the container 202 in a manner that is connected to the processing space 205. A pressure controller, namely an APC (Auto Pressure Controller) 273, which controls the pressure in the processing space 205 to a specified pressure is provided in the exhaust pipe 272. The APC 273 has a valve body (not shown) capable of adjusting the opening, and adjusts the flow conductance of the exhaust pipe 272 according to instructions from the controller 400. In addition, in the exhaust pipe 272, a valve 274 is provided on the upstream side of the APC 273. The exhaust pipe 272, the valve 274, and the APC 273 are collectively referred to as the exhaust section 271. In addition, a DP (Dry Pump) 275 is provided downstream of the exhaust pipe 272. The DP 275 exhausts the atmosphere of the processing space 205 via the exhaust pipe 272. The DP 275 may also be included in the exhaust section 271.

[0059] The substrate processing apparatus 100 includes a controller 400 that controls the operation of each unit of the substrate processing apparatus 100 .

[0060] Figure 3 The controller 400 is schematically shown. The controller 400, serving as a control unit, is configured as a computer having a CPU (Central Processing Unit) 401, RAM (Random Access Memory) 402, a storage unit 403 serving as a storage device, and an I / O port 404. The RAM 402, storage unit 403, and I / O port 404 are configured to exchange data with the CPU 401 via an internal bus 405. Data transmission and reception within the substrate processing apparatus 100 is performed by instructions from a transmission / reception instruction unit 406, which is also a function of the CPU 401.

[0061] The CPU 401 further includes an analyzing unit 407 . The analyzing unit 407 has a function of analyzing the relationship between the table stored in the storage unit 403 and the temperature information measured by the temperature measuring units 221 and 237 .

[0062] A network transceiver 283 is provided which is connected to the host device 270 via a network. The network transceiver 283 can receive processing history information of the substrates S in a lot (Lot), information on processing schedules, and the like.

[0063] The storage unit 403 is composed of, for example, a flash memory or a hard disk drive (HDD). A process recipe 409 describing the substrate processing process and conditions, and a control program 410 for controlling the operation of the substrate processing apparatus are recorded and stored in a readable manner within the storage unit 403. Furthermore, a first dielectric plate temperature table 411 and a second dielectric plate temperature table 412, described later, are recorded and stored in a readable manner within the storage unit 403.

[0064] Furthermore, the process recipe 409 is assembled so that the controller 400 can execute each process in the substrate processing step described later to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe 409, control program 410, etc. will also be referred to as a program. Furthermore, in this specification, when the term "program" is used, it may include only the process recipe 409, only the control program 410, or both. Furthermore, the RAM 402 serves as a storage area (work area) for temporarily storing programs, data, etc. read by the CPU 401.

[0065] The I / O port 404 is connected to components of the substrate processing apparatus 100 , such as the gate valve 149 , the lift unit 218 , pressure regulators, pumps, and the heater controller 223 .

[0066] The CPU 401 is configured to read and execute a control program 410 from the storage unit 403, and to read a process recipe 409 from the storage unit 403 in response to input of an operation command from the input / output device 281. Furthermore, the CPU 401 is configured to control the opening and closing operations of the gate valve 149, the raising and lowering operations of the lifting unit 218, the temperature measuring units 221 and 237, the heater control unit 223, the on / off control of each pump, the flow rate adjustment operation of the MFC, valves, and the like, in accordance with the contents of the read process recipe.

[0067] In addition, the controller 400 can constitute the controller 400 of the present technology by installing the program on the computer using an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) 282 that records and stores the above-mentioned program. In addition, the method of supplying the program to the computer is not limited to the case of supplying it via the external storage device 282. For example, a communication unit such as the Internet or a dedicated line can also be used to supply the program without going through the external storage device 282. In addition, the storage unit 403 and the external storage device 282 are configured as a computer-readable storage medium. Hereinafter, they will be collectively referred to as storage media. In addition, in this specification, when the term storage medium is used, there is a case where only the storage unit 403 is included, a case where only the external storage device 282 is included, or a case where both are included.

[0068] Next, use Figure 4 The first dielectric plate temperature table 411 is described below. The vertical axis represents the lot number, and the horizontal axis represents the temperature of the dielectric plate 252 corresponding to the substrate number. The first dielectric plate temperature table 411 records the temperature of the dielectric plate 252 measured by the temperature measuring unit 237.

[0069] Here, the number of substrates S processed in one batch is set to m (m is an arbitrary number). Furthermore, the number of batches is shown to be greater than n+1 (n is an arbitrary number). However, the number of substrates S varies from batch to batch. For example, the first batch may contain m substrates S, while the nth batch may contain m-2 substrates S.

[0070] The first dielectric plate temperature table 411 records the temperature of the dielectric plate 252 measured in the first temperature measurement step S104, described later. In the first temperature measurement step S104, for example, the temperature of the dielectric plate 252 is measured during the final substrate processing in a batch. In other words, the temperature is measured during the substrate processing prior to the next batch processing setting step S108, described later. For the first batch, the temperature is measured during the processing of the mth substrate; for the nth batch, the temperature is measured during the processing of the m-2th substrate.

[0071] Next, use Figure 5The second dielectric plate temperature table 412 is described below. It indicates information about the previously processed lot number and the corresponding dielectric plate temperature information. This dielectric plate temperature information is the temperature of the dielectric plate 252 measured in the second temperature measurement step S110, described later. The second dielectric plate temperature table 412 records the temperature of the dielectric plate 252 measured by the temperature measuring unit 237.

[0072] Next, as one step of the semiconductor manufacturing process, a process of forming a thin film on a substrate S using the substrate processing apparatus 100 having the above-described structure will be described. In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 400 .

[0073] First, use Figure 6 The substrate processing steps in batch units will be described.

[0074] (nth batch processing step: S102)

[0075] The n-th batch processing step S102 will be described. n is 1 or greater.

[0076] In the nth batch processing step S102, the nth batch of substrates S is processed. Here, a predetermined number of substrates S from the nth batch undergo film formation in the processing space 205. After film formation is completed, the processed substrates S are unloaded from the substrate processing apparatus 100 and replaced with unprocessed substrates S to be replaced with the next substrate S. The film formation process will be described in detail later.

[0077] (First Temperature Measurement Step: S104)

[0078] Next, the first temperature measuring step S104 will be described.

[0079] In the first temperature measurement step S104, the temperature measuring device 235 measures the temperature of the dielectric plate 252 in the n-th lot processing step S102. The temperature measuring unit 237 records the value measured by the temperature measuring device 235 in the first dielectric plate temperature table 411 as reference data.

[0080] Next, the timing of measuring the temperature will be described.

[0081] As described above, in the nth batch processing step S102, multiple substrates S are processed. This step is performed, for example, after the final substrate of the nth batch has been processed. For the first batch, the temperature is measured after the mth substrate has been processed; for the nth batch, the temperature is measured after the m-th substrate has been processed. This simultaneous measurement allows for stable temperature measurement. Furthermore, this step can also be performed in parallel with the final substrate of the batch.

[0082] (Judgment: S106)

[0083] Next, determination S106 will be described.

[0084] After the n-th batch processing step S102 and the first temperature measurement step S104 are completed, the process proceeds to determination S106. Here, a determination is made as to whether the predetermined number of batches has been processed. If so, the process ends. If not, the process proceeds to the next batch processing setting step S108.

[0085] (Next batch processing setting step: S108)

[0086] Next, the next batch processing setting step S108 will be described.

[0087] Here, the substrate processing apparatus 100 is configured to be compatible with the next batch to be processed. For example, after processing batch n, the apparatus is configured to be able to process batch n+1. As an example of this configuration, the transfer robot is switched to be able to access the FOUP (Front Opening Unified Pod) storing the substrates S of batch n+1.

[0088] Here, since the substrates S of the nth batch have been unloaded from the substrate processing apparatus 100, the substrate support table 212 is in a standby state at the transfer position. The next batch processing setting step S108 is also simply referred to as a setting step.

[0089] (Second Temperature Measurement Step: S110)

[0090] Next, the second temperature measuring step S110 will be described.

[0091] After the next batch processing setting step S108 , the second temperature measurement step S110 is performed. Specifically, the temperature of the dielectric plate 252 is measured before the next batch of substrates S is loaded. Here, the temperature measurement unit 237 records the measured value measured by the temperature measuring device 235 in the second dielectric plate temperature table 412 .

[0092] As described above, during the next batch processing setup step S108, the substrate support table 212 is in a standby state at the transfer position. Therefore, the dielectric plate 252 is less affected by the heater 213. Consequently, the temperature of the dielectric plate 252 measured in the second temperature measurement step S110 is lower than the temperature recorded in the first dielectric plate temperature table 411 during the process. Other possible causes of variations in the temperature drop include, for example, differences in the timing of the next batch processing setup step S108 or variations in the temperature of the previous batch, the nth batch.

[0093] (Temperature difference calculation step: S112)

[0094] Next, the temperature difference calculation step S112 will be described.

[0095] The temperature difference here refers to the temperature difference (Δt) between the temperature measured in the first temperature measuring step S104 and the temperature measured in the second temperature measuring step S110 .

[0096] For example, the difference between the temperature of the lot number n in the first dielectric plate temperature table 411 and the temperature of the lot number n processed previously in the second dielectric plate temperature table 412 is calculated.

[0097] (Judgment: S114)

[0098] Next, determination S114 will be described.

[0099] If the temperature of the dielectric plate 252 decreases, it is considered that the reproducibility of substrate processing will be affected. For example, the temperature of the dielectric plate 252 is considered to be different between the last substrate processed in the nth batch and the first substrate processed in the (n+1)th batch.

[0100] The temperature of dielectric plate 252 affects the state of plasma generation. Therefore, the state of plasma varies depending on the temperature of dielectric plate 252. Furthermore, if the temperature within the plane of dielectric plate 252 varies, for example, if the temperature differs between the center and edge of dielectric plate 252, the plasma generated below center portion 252C of dielectric plate 252 and the plasma generated below edge portion 252E will differ in state, such as plasma density and activity.

[0101] Due to such influence, it is considered that when the substrate S is processed at different temperatures, the film quality of the substrate S may vary. Therefore, in this embodiment, the temperature adjustment step S116 described later is performed.

[0102] In this step, a determination is made as to whether to proceed to the temperature adjustment step S116. This determination is made using the difference calculated in the temperature difference calculation step S112. For example, if Δt is within a specified range (e.g., less than 5°C), meaning that the temperature of the dielectric plate 252 is higher than the specified temperature, the temperature deviation is deemed to have no impact on substrate processing, and the process is not considered to proceed to the temperature adjustment step S116, described later. If this determination is not made, the process proceeds to the nth batch processing step S102 within the n+1th batch, and processing of the substrate S begins.

[0103] For example, when Δt is outside a predetermined range (eg, 5° C. or higher), that is, when the temperature of the dielectric plate 252 is below a predetermined temperature, it is determined that the process should proceed to the temperature adjustment step S116 .

[0104] (Temperature adjustment step: S116)

[0105] Next, the temperature adjustment step S116 will be described.

[0106] As described above, when switching to the next batch, the temperature of the dielectric plate 252 decreases. Therefore, the processing conditions of the substrates S processed subsequently differ from those of the previous batch. Therefore, in this step, the temperature of the dielectric plate 252 is adjusted to approximately the same temperature as that of the previous batch. Specifically, a heat treatment is performed to heat the dielectric plate 252. The specific method is described below.

[0107] Here, a heating medium is supplied from a gas supply unit toward dielectric plate 252. For example, an inert gas is supplied from third gas supply unit 243. Microwaves are then supplied from microwave supply source 257 to container 251, generating plasma of the heating medium (inert gas) on the surface of dielectric plate 252 facing processing space 205. The heat from the generated plasma heats dielectric plate 252.

[0108] Next, a comparative example of a heating method will be described. Consider, for example, a heating configuration in which a resistive heater is disposed on the periphery of dielectric plate 252. However, in this configuration, center portion 252C of dielectric plate 252 is located away from the resistive heater. Therefore, the temperature of edge portion 252E of dielectric plate 252 is higher than that of center portion 252C. Consequently, it is believed that the surface temperature of dielectric plate 252 becomes non-uniform, and thus the generated plasma becomes non-uniform.

[0109] In contrast, when a heating medium is used, the heating medium can be uniformly supplied to the surface of dielectric plate 252, thereby preventing a temperature difference between center portion 252C and edge portion 252E. Consequently, dielectric plate 252 can be uniformly heated, thereby generating uniform plasma.

[0110] (Next batch processing transfer process: S118)

[0111] Next, the next batch transfer step S118 will be described. After the temperature adjustment step S116 is completed, or after it is determined in step S114 that temperature adjustment is not necessary, the process proceeds to the next batch transfer step S118. Here, the substrate processing apparatus 100 is controlled based on the settings made in the next batch setting step S108. For example, the next batch of substrates S is loaded into the substrate processing apparatus 100.

[0112] (Film Forming Process)

[0113] Next, as a step in the semiconductor manufacturing process, Figure 7 The process of forming a thin film on a substrate S using the substrate processing apparatus 100 having the above-described structure will now be described. This process is a process in which one substrate is processed within the n-th batch processing step S102. Specifically, in the n-th batch processing step S102, the film forming process is repeated for the number of substrates processed in the batch.

[0114] Here, an example of forming a silicon nitride (SiN) film as a semiconductor thin film on a substrate S by alternately supplying DCS gas as a first process gas and NH 3 gas as a second process gas will be described.

[0115] (Substrate carrying and supporting process)

[0116] The substrate support table 212 is lowered to the transfer position for the substrate S, and the lift pins 207 are passed through the through-holes 214 of the substrate support table 212. As a result, the lift pins 207 protrude a predetermined height from the surface of the substrate support table 212. Simultaneously with these operations, the atmosphere in the transfer space 206 is exhausted to a pressure equal to or lower than that of an adjacent vacuum transfer chamber (not shown).

[0117] Next, the gate valve 149 is opened to allow the transfer space 206 to communicate with the adjacent vacuum transfer chamber. Then, the transfer robot (not shown) is used to support the transfer robot 207 from the vacuum transfer chamber.

[0118] (Substrate processing position moving step)

[0119] After a predetermined time has passed, the substrate support table 212 is raised to support the substrate S on the support surface 211. Figure 1 As shown, it rises to the substrate processing position.

[0120] (Gas supply process)

[0121] Next, the film forming process will be described. Figure 7 The film forming process is a cyclic process in which different process gases are alternately supplied repeatedly.

[0122] (First Processing Gas Supplying Step: S202)

[0123] After the substrate support table 212 is moved to the substrate processing position, the atmosphere in the processing chamber 201 is exhausted through the exhaust pipe 272 to adjust the pressure in the processing chamber 201 .

[0124] After the pressure is adjusted to a predetermined value and the temperature of the substrate S reaches a predetermined temperature, for example, 500°C to 600°C, DCS gas is supplied from the gas supply pipe 240 into the processing chamber. The supplied DCS gas forms a silicon-containing layer on the substrate S. After a predetermined time has passed, the supply of DCS gas is stopped.

[0125] (Purge process: S204)

[0126] After stopping the supply of DCS gas, N2 gas is supplied from the third gas supply pipe 243a to purge the atmosphere in the processing chamber 201. Thus, the DCS gas that failed to bond to the substrate S in the first processing gas supply step S202 is removed from the processing chamber 201 through the exhaust pipe 272.

[0127] (Second Processing Gas Supplying Step: S206)

[0128] After the atmosphere in the processing chamber 201 is purged, the second processing gas supply step S206 is performed. In the second processing gas supply step S206, valve 242d is opened to start the supply of NH3 gas. At this time, MFC 242c is adjusted to achieve a predetermined flow rate of NH3 gas. The supply flow rate of NH3 gas is, for example, between 1000 and 10,000 sccm. Microwaves are then supplied to the container 251 to generate NH3 gas plasma within the processing space 205.

[0129] The NH3 gas plasma reacts with the silicon-containing layer on the substrate S. Furthermore, the already formed silicon-containing layer is modified by the NH3 gas plasma. This forms, for example, a SiN layer containing silicon and nitrogen elements on the substrate S. After a predetermined time has passed since the start of the NH3 gas supply, the NH3 gas supply is stopped.

[0130] (Purge process: S208)

[0131] After the supply of NH 3 gas is stopped, a purge step S208 similar to the above-mentioned purge step S204 is executed. The operation of each part in the purge step S208 is similar to that of the above-mentioned purge step S204, and therefore, the description thereof is omitted here.

[0132] (Judgment step: S210)

[0133] The first process gas supply step S202, the purge step S204, the second process gas supply step S206, and the purge step S208 are considered one cycle, and the controller 400 determines whether the cycle has been performed a predetermined number of times (n cycles). When the predetermined number of cycles has been performed, a SiN layer having a desired film thickness is formed on the substrate S.

[0134] (Substrate unloading process)

[0135] After the SiN layer having a desired film thickness is formed, the substrate support table 212 is lowered to move the substrate S to the transfer position. After moving to the transfer position, the substrate S is unloaded from the transfer space 206.

[0136] By maintaining the temperature of dielectric plate 252 within a predetermined range between batches, substrates can be processed uniformly between batches. Furthermore, by heating dielectric plate 252 with a heating medium, the surface of dielectric plate 252 can be heated uniformly. Consequently, film quality can be made uniform between batches (more specifically, between substrates S).

[0137] [Second aspect of the present disclosure]

[0138] Next, mainly use Figures 8 to 10 The second aspect of the present disclosure will be described. Figure 8 This is a schematic cross-sectional view of the substrate processing apparatus 200 as viewed from above. Figure 9 This is a schematic longitudinal sectional view of the substrate processing apparatus 200 of this embodiment. Figure 8 The α-α′ line of the chamber is shown. The α-α′ line is a line running from α through the center of the chamber 302 toward α′. Figure 10 This is a diagram illustrating the fourth gas supply unit 361 provided in the substrate processing apparatus 200 .

[0139] The specific structure of the substrate processing apparatus 200 will be described. The substrate processing apparatus 200 is controlled by the controller 400 in the same manner as the substrate processing apparatus 100. Figure 9 In, with Figure 1 Elements that are substantially the same as those described in are denoted by the same reference numerals, and their description is omitted.

[0140] like Figure 8 and Figure 9 As shown, the substrate processing apparatus 200 mainly comprises a cylindrical airtight container, namely a chamber 302. The chamber 302 comprises a processing chamber 301 for processing a substrate S. A gate valve (not shown) is connected to the chamber 302, and the substrate S is loaded and unloaded through the gate valve.

[0141] The processing chamber 301 includes a processing area 306 for supplying a processing gas and a purge area 307 for supplying a purge gas, serving as a processing space. The processing area 306 and the purge area 307 are arranged in a circular pattern. For example, the processing area 306a and the purge area 307 are arranged in the order of a first processing area 306a, a first purge area 307a, a second processing area 306b, a second purge area 307b, a third processing area 306c, and a third purge area 307c.

[0142] A nozzle 325 connected to the first gas supply unit 241 is provided in the first processing area 306a, a nozzle 326 connected to the second gas supply unit 242 is provided in the second processing area 306b, and a nozzle 327 connected to a fourth gas supply unit 361, described later, is provided in the third processing area 306c. Furthermore, a nozzle 345 is provided in the first purge area 307a, a nozzle 346 is provided in the second purge area 307b, and a nozzle 347 is provided in the third purge area 307c, each of which is connected to the third gas supply unit 243.

[0143] Next, use Figure 10 The fourth gas supply unit 361 will be described.

[0144] The fourth gas supply pipe 361 a is provided with a fourth gas source 361 b , an MFC 361 c , and a valve 361 d in this order from the upstream direction.

[0145] The fourth gas source 361b is a source of a second gas containing a fourth element (hereinafter also referred to as "fourth element-containing gas"). The fourth element-containing gas is one type of processing gas. Furthermore, the fourth element-containing gas can be considered a reaction gas or a reforming gas.

[0146] The fourth element is, for example, hydrogen (H). In this technology, the gas containing the fourth element is, for example, an H-containing gas. Specifically, hydrogen (H2) gas is used as the H-containing gas. The fourth gas supply unit 361 (also referred to as the second reaction gas supply unit) is primarily composed of a fourth gas supply pipe 361a, an MFC 361c, and a valve 361d.

[0147] A first gas is supplied from nozzle 325 to the first processing area 306a, a second gas is supplied from nozzle 326 to the second processing area 306b, and a fourth gas is supplied from nozzle 327 to the third processing area 306c. Furthermore, an inert gas is supplied from nozzle 345 to the first purge area 307a, an inert gas is supplied from nozzle 346 to the second purge area 307b, and an inert gas is supplied from nozzle 347 to the third purge area 307c. Thus, the substrate S is subjected to a predetermined process based on the gases supplied to each area.

[0148] The purge region 307 is a region that spatially separates the first processing region 306a from the second processing region 306b and the third processing region 306c. The adjacent processing regions 306 are divided by supplying purge gas to these spaces.

[0149] A substrate support plate 317, which is a rotatable substrate support portion and has a rotation axis, is provided in the center of the chamber 302. The substrate support plate 317 has a heat-transmitting property and transmits heat emitted from a heater 380 (described later as a heating portion). The transmitted heat heats the substrate S.

[0150] The substrate support plate 317 has multiple support surfaces 311, which enable multiple (e.g., five) substrates S to be arranged on the same surface and in the same circular shape along the rotation direction. The substrates S are supported on each support surface 311. The substrate support plate 317 is a structure that supports the substrates and is therefore also called a support portion.

[0151] The substrate support plate 317 is supported on a shaft 322 via a core 321. The lower portion of the shaft 322 passes through a hole 323 provided in the bottom of the chamber 302 and is covered by an airtight bellows 304 outside the chamber 302. Furthermore, a rotating portion 319 is provided at the lower end of the shaft 322. The rotating portion 319 is configured to rotate the substrate support plate 317 in response to instructions from the controller 400.

[0152] A heater unit 381 containing a heater 380 serving as a heating unit is disposed below the substrate support plate 317. The heater 380 heats each substrate S supported on the substrate support plate 317. The heaters 380 are arranged in a circular pattern along the shape of the chamber 302. The heaters 380 are connected to a heater control unit 387. The heaters 380 are electrically connected to a controller 400, and the power supply to the heaters 380 is controlled according to instructions from the controller 400 to control the temperature.

[0153] An exhaust structure 386 is disposed on the outer periphery of the substrate support plate 317. The exhaust structure 386 includes an exhaust groove 388 and an exhaust buffer space 389. The exhaust groove 388 and the exhaust buffer space 389 are formed into a circular shape along the shape of the chamber 302. An exhaust hole 392 is provided at the bottom of the exhaust structure 386. The exhaust hole 392 exhausts the gas supplied into the chamber 302. The gases are discharged from the exhaust hole 392 via the exhaust groove 388 and the exhaust buffer space 389.

[0154] The exhaust section 330 is connected to the exhaust hole 392. The exhaust section 330 has an exhaust pipe 331, and a valve 332 and a pressure regulating section 333 are provided on the exhaust pipe 331. A pump 334 is connected to the exhaust pipe 331. The exhaust section 330 is mainly composed of the exhaust pipe 331 and the valve 332. The pressure regulating section 333 and the pump 334 can be included in the exhaust section 330. The exhaust section 330 can be as follows Figure 8 Thus, the exhaust hole 392 is provided. In this case, the exhaust portion communicating with the exhaust hole 392a is referred to as the exhaust portion 330a, and the exhaust portion communicating with the exhaust hole 392b is referred to as the exhaust portion 330b.

[0155] Next, the electromagnetic wave supply unit 250 will be described. The electromagnetic wave supply unit 250 has the same structure as the electromagnetic wave supply unit 250 installed in the substrate processing apparatus 100. The electromagnetic wave supply unit 250 is installed in the second processing area 306b and the third processing area 306c, respectively, to generate plasma in each area. The electromagnetic wave supply unit 250 in the second processing area 306b will be referred to as the electromagnetic wave supply unit 250b, and the electromagnetic wave supply unit 250 in the third processing area 306c will be referred to as the electromagnetic wave supply unit 250c. Similarly, the components of the electromagnetic wave supply unit 250 are denoted by the symbol "b" for components associated with the second processing area 306b, and by the symbol "c" for components associated with the third processing area. Similarly, the dielectric plate 252, temperature measuring device 235, and temperature measuring unit 237 are denoted by the symbols "b" and "c" for components associated with the third processing area. Furthermore, the slit plate 256 is denoted by the symbol "b" for components associated with the dielectric plate 252b, and by the symbol "c" for components associated with the dielectric plate 252c. Regarding plate container 251, the reference to electromagnetic wave supply unit 250b is labeled "b," and the reference to electromagnetic wave supply unit 250c is labeled "c." Regarding space 255, the reference to container 251b is labeled "b," and the reference to container 251c is labeled "c." The same applies to microwave supply source 257, waveguide 258, and gate 259.

[0156] Nozzles are provided in chamber 302 to supply gas below dielectric plate 252. Specifically, nozzle 326 is provided below dielectric plate 252b in second processing area 306b. Furthermore, nozzle 327 is provided below dielectric plate 252c in third processing area 306c. Nozzle 326 is connected to second gas supply unit 242. Nozzle 327 is connected to fourth gas supply unit 361.

[0157] The substrate processing step of this embodiment is substantially the same as that of the first embodiment, so the description will focus on the differences.

[0158] (nth batch processing step S102)

[0159] In the nth batch processing step S102, the nth batch of substrates S is processed. Here, a predetermined number of substrates S from the nth batch undergo film formation processing in the processing area 306. Specifically, the substrate support plate 317 is rotated while supporting the plurality of substrates S on the support surface 311, and the substrates S pass through the first processing area 306a, the second processing area 306b, and the third processing area 306c.

[0160] The first process gas supply step is performed by passing the substrate S through the first process area 306a while a first gas (e.g., DCS gas) is supplied. The second process gas supply step is performed by passing the substrate S through the second process area 306b while a plasma of a second gas (e.g., NH3 gas) is generated. This is repeated a predetermined number of times, i.e., after passing through the substrate S a predetermined number of times, a SiN film is formed. To further modify the SiN film, a fourth gas (H2 gas) is passed through the substrate S in a plasma state in the third process area 306c while the supply of the first and second gases is stopped, thereby modifying the SiN film. Specifically, the H plasma is used to remove impurities (Cl components) contained in the SiN film formed by the first and second gases.

[0161] (First Temperature Measurement Step S104)

[0162] This is substantially the same as the first embodiment, but differs in that the temperature of each dielectric plate 252 is measured. Specifically, the temperature measuring device 235b measures the temperature of the dielectric plate 252b, and the temperature measuring device 235c measures the temperature of the dielectric plate 252c.

[0163] (Determination S106, Next Batch Processing Setting Step S108)

[0164] Since it is the same as the first embodiment, the description is omitted.

[0165] (Second Temperature Measurement Step S110)

[0166] This is substantially the same as the first embodiment, but differs in that the temperature of each dielectric plate 252 is measured. Specifically, the temperature measuring device 235b measures the temperature of the dielectric plate 252b, and the temperature measuring device 235c measures the temperature of the dielectric plate 252c.

[0167] (Temperature Difference Calculation Step S112)

[0168] Here, the difference between the temperature measured in the first temperature measurement step S104 and the temperature measured in the second temperature measurement step S110 is calculated for each dielectric plate 252. Specifically, the temperature difference (Δt) between the dielectric plates 252b and 252c is calculated.

[0169] (Judgment S114)

[0170] If the temperature difference (Δt) between the dielectric plates 252 is within a predetermined range (e.g., less than 5°C), the process does not proceed to the temperature adjustment step S116 but instead proceeds to the next batch processing transfer step S118. If the temperature difference (Δt) between at least one dielectric plate 252 is outside the predetermined range (e.g., greater than 5°C), that is, if the temperature of the dielectric plate 252 is below the predetermined temperature, it is determined that the process should proceed to the temperature adjustment step S116, and the process proceeds to the temperature adjustment step S116.

[0171] The following describes examples of conditions, but they vary depending on the content of the processing and are not limited to these examples.

[0172] Dielectric plate 252b: Δt(252b)<5°C

[0173] Dielectric plate 252c: Δt(252c)<5°C

[0174] (Temperature Adjustment Step S116)

[0175] Next, the temperature adjustment step S116 will be described.

[0176] Here, the temperature is adjusted for each dielectric plate 252. During this adjustment, the same treatment as in the first embodiment is performed on each dielectric plate 252. Specifically, first, inert gas, serving as a heating medium, is supplied from nozzles 346 and 347, such that inert gas is present below dielectric plates 252b and 252c. Next, microwaves are supplied from microwave source 257b to container 251b, generating an inert gas plasma on the surface of dielectric plate 252b facing the processing region 306. Similarly, microwaves are supplied from microwave source 257c to container 251c, generating an inert gas plasma on the surface of dielectric plate 252c facing the processing region 306. The heat from the generated plasma heats dielectric plates 252b and 252c. This heating allows the surfaces of each dielectric plate 252b and 252c to be uniformly heated.

[0177] After heating, the temperature of each dielectric plate 252 is compared with the temperature measured in the first temperature measurement step S104. If the temperature difference is within a specified range, that is, if the target temperature is reached, the process moves to the next batch in step S118. By keeping the temperature difference between this step and the first temperature measurement step S104 within the specified range for each dielectric plate 252, the plasma generation state in each dielectric plate 252 can be maintained consistent with that of the previous batch. In particular, when the timing of plasma generation differs between the electromagnetic wave supply units 250b and 250c, as in this embodiment, the temperature of each dielectric plate 252 may differ. Therefore, it is preferable to adjust the temperature individually.

[0178] To individually adjust the temperature of each dielectric plate 252, the microwave irradiation time can be adjusted. The microwave supply time is linked to the plasma generation time. Therefore, by individually adjusting the microwave supply time, the temperature of each dielectric plate 252 can be individually adjusted. The irradiation time is adjusted by turning the microwave supply source 257 on and off. Furthermore, a gate 259, which serves as a movement restriction to limit microwave movement, can be provided in the waveguide 258. The irradiation time can be adjusted by opening and closing the gate 259.

[0179] During at least a portion of the time that the plasma of the heating medium (inert gas) is generated, the support surface 311 is preferably not maintained directly below the dielectric plate 252. To this end, the dielectric plate 252 and the support surface 311 are moved relative to each other. Specifically, the substrate support plate 317 is rotated, causing the support surface 311 to move from below the dielectric plate 252. If the substrate support plate 317 were fixed without rotation, the same support surface 311 would always be located directly below the dielectric plate 252. Therefore, if the plasma energy is high, this support surface 311 could be etched. This would result in a different state from the other support surfaces 311, potentially causing uneven heating of the heater 380 across the entire substrate support plate 317 or generating particles due to etching. In contrast, by rotating the substrate support plate 317 using at least a portion of the internal combustion engine that generates the plasma, a specific surface of the substrate support plate 317 is no longer always located directly below the dielectric plate 252, thereby maintaining a constant state on the surface of the substrate support plate 317.

[0180] As described above, the film quality between batches, specifically, between substrates S can be made uniform.

[0181] [Third aspect of the present disclosure]

[0182] Next, use Figure 11 The third embodiment of the present disclosure is described. The main difference between the third embodiment and the first embodiment is that each embodiment has a plurality of dielectric plates 512, an electromagnetic wave supply unit 510, and a temperature measuring unit 521. The following description will focus on the differences. Figure 11 In, with Figure 1 Elements that are substantially the same as those described in are denoted by the same reference numerals, and their description is omitted.

[0183] The relationship between the dielectric plate 512, the electromagnetic wave supply unit 510, and the temperature measuring unit 521 will be described. Figure 11 , three combinations of the dielectric plates 512, the electromagnetic wave supplying units 510, and the temperature measuring units 521 are described respectively. However, since they have the same structure, one combination will be described as an example.

[0184] In the substrate processing apparatus 300, there are a plurality of electromagnetic wave supply units 510. The container 511 constituting the electromagnetic wave supply unit 510 is provided on the top plate 202a of the container 202. A plurality of dielectric plates 512 are provided between the container 511 and the substrate support table 212. A slit plate 513 is provided above each dielectric plate 512. A temperature measuring device 522 capable of measuring the temperature of the dielectric plate 512 is provided near the dielectric plate 512, for example, on the top plate 202a. The temperature measuring devices 522 are connected to the temperature measuring units 521, respectively. In addition, Figure 11 , a plurality of temperature measuring units 521 are described, but the invention is not limited thereto, and information measured by the temperature measuring devices 522 may be collected in one temperature measuring unit 521 .

[0185] A space 515 is defined between the upper surface of the slit plate 513 and the inner wall of the container 511. The container 511 is connected to a waveguide 518. The waveguide 518 is connected to a microwave supply source 517, and microwaves generated by the microwave supply source 517 are supplied to the space 515 via the waveguide 518. Furthermore, a gate 519 may be provided in the waveguide 518. The electromagnetic wave supply unit is primarily composed of the container 511, but may also include the slit plate 513, the gate 519, a portion of the microwave supply source 517, or a combination thereof.

[0186] In this manner, since the electromagnetic wave supply unit 510 is provided for each dielectric plate 512 , each dielectric plate 512 can be heated independently as described later.

[0187] A gas supply pipe 542 capable of supplying gas to the bottom of each dielectric plate 512 is provided between the top plate 202a of the container 202 and each dielectric plate 512. The gas supply pipe 542 can be any type as long as it can supply gas to the dielectric plate 512. Figure 11 A plurality of gas supply pipes 542 are provided. Here, two gas supply pipes 542 (542a, 542b) are described. The gas supply pipes 542 are configured to communicate with the first gas supply unit 241, the second gas supply unit 242, and the third gas supply unit 243.

[0188] Of the plurality of dielectric plates 512, the first dielectric plate 512a is located at the center of the top plate 202a, and the second dielectric plates 512b and 512c are arranged in a surrounding pattern around the dielectric plate 512a. The center of the top plate 202a is located opposite the center of the substrate S supported on the support surface 211. This arrangement allows the surface temperature of the substrate S to be uniform. Figure 11 In FIG. 5 , two dielectric plates 512 b and 512 c are shown around the dielectric plate 512 a , but three or more dielectric plates may be provided.

[0189] The electromagnetic wave supply unit 510 is provided so as to correspond to each dielectric plate 512. Figure 11 In the electromagnetic wave supply unit 510 and the temperature measuring unit 521, the corresponding dielectric plate 512a is labeled "a", the corresponding dielectric plate 512b is labeled "b", and the corresponding dielectric plate 512c is labeled "c". Furthermore, regarding the slot plate 513, the corresponding dielectric plate 512a is labeled "a", the corresponding dielectric plate 512b is labeled "b", and the corresponding dielectric plate 512c is labeled "c". Regarding the temperature measuring device 522, the corresponding temperature measuring unit 521a is labeled "a", the corresponding temperature measuring unit 521b is labeled "b", and the corresponding temperature measuring unit 521c is labeled "c". Regarding the container 511, the corresponding electromagnetic wave supply unit 510a is labeled "a", the corresponding electromagnetic wave supply unit 510b is labeled "b", and the corresponding electromagnetic wave supply unit 510c is labeled "c". Regarding the space 515, the corresponding container 511a is labeled "a", the corresponding container 511b is labeled "b", and the corresponding container 511c is labeled "c". The same applies to the microwave supply source 517, the waveguide 518 and the gate 519.

[0190] The substrate processing step of this embodiment is substantially the same as that of the first embodiment, so the description will focus on the differences.

[0191] (nth batch processing step S102)

[0192] In the nth batch processing step S102, the nth batch of substrates S is processed. Here, a predetermined number of substrates S in the nth batch are subjected to film formation processing in the processing space 205. Specifically, a plurality of electromagnetic wave supply units 510 are used to generate plasma in the processing space 205 to process the substrates S.

[0193] (First Temperature Measurement Step S104)

[0194] This method is substantially the same as the first method, but differs in that the temperature of each of dielectric plates 512, namely, the temperature of dielectric plate 512a, dielectric plate 512b, and dielectric plate 512c, is measured. Specifically, temperature measuring device 522a measures the temperature of dielectric plate 512a, temperature measuring device 522b measures the temperature of dielectric plate 512b, and temperature measuring device 522c measures the temperature of dielectric plate 512c.

[0195] (Determination S106, Next Batch Processing Setting Step S108)

[0196] This is the same as the first embodiment, and therefore, description thereof will be omitted.

[0197] (Second Temperature Measurement Step S110)

[0198] As in the first temperature measurement step S104, the temperature of each dielectric plate 512 is measured. Specifically, the temperature measuring device 522a measures the temperature of the dielectric plate 512a, the temperature measuring device 522b measures the temperature of the dielectric plate 512b, and the temperature measuring device 522c measures the temperature of the dielectric plate 512c.

[0199] (Temperature Difference Calculation Step S112)

[0200] Here, the temperature difference is calculated in each dielectric plate 512. Specifically, the temperature difference between the temperature measured in the first temperature measuring step S104 and the temperature measured in the second temperature measuring step S110 is calculated in each of the dielectric plates 512a, 512b, and 512c.

[0201] (Judgment S114)

[0202] In terms of the relationship with each dielectric plate 512 , when the following conditions are satisfied, the process does not proceed to the temperature adjustment step S116 but proceeds to the next lot process transfer step S118 .

[0203] The first condition is that the temperature difference between each dielectric plate 512 in the first temperature measurement step S104 and the second temperature measurement step S110 is within a first range (predetermined range). For example, for dielectric plate 512a, this is the case where the temperature difference between the first temperature measurement step S104 and the second temperature measurement step S110 is within the first range. The same applies to dielectric plates 512b and 512c. Furthermore, the second condition is that the temperature difference between each dielectric plate 512 in the second temperature measurement step S110 is within a second range (predetermined range). If either the first or second condition is not met, the process proceeds to the temperature adjustment step S116. For example, this is the case where the temperature difference between dielectric plates 512a, 512b, and 512c in the second temperature measurement step S110 is within the second range. If the temperature difference between at least one dielectric plate 512 is outside the predetermined range (eg, 5° C. or greater), that is, if the temperature of the dielectric plate 512 is below the predetermined temperature, it is determined that the process should proceed to the temperature adjustment step S116 .

[0204] (Temperature Adjustment Step S116)

[0205] Next, the temperature adjustment step S116 will be described. If the above conditions are not met, the process proceeds to the temperature adjustment step S116. Here, the temperature is adjusted for each dielectric plate 512. This allows for appropriate temperature adjustment for each dielectric plate 512.

[0206] First, inert gas is supplied from gas supply pipe 542, so that inert gas, serving as a heating medium, is present below dielectric plates 512a, 512b, and 512c. Next, microwaves are supplied from microwave supply source 517a to container 511a, generating inert gas plasma on the surface of dielectric plate 512a facing processing space 205, thereby heating dielectric plate 512a. Dielectric plates 512b and 512c are also heated in the same manner.

[0207] After heating, if the aforementioned conditions are met, i.e., if each dielectric plate 512 reaches the target temperature, the process proceeds to the next batch processing step S118. By ensuring that the temperature difference between this step and the first temperature measurement step S104 is within a first range (predetermined range) for each dielectric plate 512, the plasma generation state in each dielectric plate 512 can be made the same as that of the previous batch. Furthermore, by ensuring that the temperature between the plurality of dielectric plates 512 is within a second range (predetermined range), the plasma generation state in each dielectric plate 512 can be made uniform.

[0208] However, the temperature of each dielectric plate 512 measured in the second temperature measurement step S110 may vary. For example, this may depend on the positional relationship with the exhaust portion 271. Figure 11 As described above, when the exhaust unit 271 is configured to exhaust the atmosphere from the periphery of the substrate support unit 210, the gas flow rate is higher below the dielectric plate 512b near the periphery of the substrate support unit 210 than at the center of the substrate support unit 210. Therefore, when exhausting the atmosphere in the processing space 205 after substrate processing, it is believed that the dielectric plate 512b is more likely to lose heat than the dielectric plate 512a. The same is true for the dielectric plate 512c. Therefore, in this process, the dielectric plate 512 can be heated independently depending on its condition.

[0209] When the temperature of each dielectric plate 512 is independently heated, the time for supplying microwaves from each electromagnetic wave supply unit 510 is adjusted. For example, if the temperature of dielectric plate 512b is lower than that of dielectric plate 512a, the heating time for dielectric plate 512b is set longer than that for dielectric plate 512. Alternatively, the amount of microwaves supplied to each dielectric plate 512 can be adjusted by opening and closing gate 519.

[0210] As described above, the film quality between batches, specifically, between substrates S can be made uniform.

[0211] <Other aspects of the present disclosure>

[0212] As mentioned above, although the aspect of this disclosure was demonstrated concretely, this disclosure is not limited to each said aspect, Various changes are possible within the range which does not deviate from the spirit.

[0213] For example, in each of the above-mentioned methods, a case is cited in which a SiN film is formed on a substrate S by alternately supplying DCS gas as the first gas and NH3 gas as the second gas in a film forming process performed by a substrate processing device, but the present disclosure is not limited to this. That is, the processing gas used for the film forming process is not limited to DCS gas, NH3 gas, etc., and other types of gases can also be used to form other types of thin films. Moreover, even in the case of using more than three processing gases, the present disclosure can be applied as long as they are alternately supplied to perform the film forming process. Specifically, the first element may be various elements such as titanium (Ti), zirconium (Zr), and hafnium (Hf) instead of Si. In addition, the second element may be argon (Ar) instead of N.

[0214] For example, the temperature adjustment step can be performed as follows. For example, heater 213 can be operated in processing chamber 201 while inert gas is filled between dielectric plate 252 and heater 213 and in processing space 205. This allows convection of heat generated by heater 213 to uniformly heat dielectric plate 252.

[0215] In addition, for example, in each of the above-mentioned methods, a film forming process is cited as an example of a process performed by a substrate processing device, but the present disclosure is not limited to this. That is, in addition to the film forming processes exemplified in each method, the present disclosure can also be applied to film forming processes other than the thin films exemplified in each method. In addition, the specific content of the substrate processing is not limited, and in addition to the film forming process, it can also be applied to other substrate processing such as annealing, diffusion, oxidation, nitridation, and photolithography. Moreover, the present disclosure can also be applied to other substrate processing devices, such as annealing devices, etching devices, oxidation devices, nitridation devices, exposure devices, coating devices, drying devices, heating devices, and other substrate processing devices using plasma. In addition, the present disclosure can also be mixed with these devices. In addition, a part of the structure of a certain method can be replaced with the structure of another method, and the structure of another method can be added to the structure of a certain method. In addition, for a part of the structure of each method, other structures can also be added, deleted, or replaced.

[0216] The recipe used in each process is preferably prepared individually according to the process content, and recorded and stored in the storage unit 403 via the electrical communication line and the external storage device 282. Furthermore, when each process is started, the CPU 401 preferably selects an appropriate recipe from the multiple recipes recorded and stored in the storage unit 403 based on the process content. This allows a single substrate processing apparatus to be used to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility. Furthermore, this reduces the burden on operators, prevents operational errors, and allows each process to be started quickly.

[0217] The above-mentioned process is not limited to newly created processes; for example, it can also be prepared by modifying an existing process already installed in a substrate processing apparatus. When modifying a process, the modified process can be installed in the substrate processing apparatus via an electrical communication line or a storage medium containing the modified process. Alternatively, the input / output device 281 of the existing substrate processing apparatus can be used to directly modify the existing process installed in the substrate processing apparatus.

[0218] The above-described method describes an example of film formation using a single-substrate processing apparatus that processes one or more substrates at a time. The present disclosure is not limited to the above-described method and, for example, can also be appropriately applied to film formation using a batch-type substrate processing apparatus that processes multiple substrates at a time. Furthermore, the above-described method describes an example of film formation using a substrate processing apparatus with a hot-wall processing furnace. The present disclosure is not limited to the above-described method and can also be appropriately applied to film formation using a substrate processing apparatus with a cold-wall processing furnace.

[0219] When these substrate processing apparatuses are used, each process can be performed using the same process procedures and process conditions as those of the above-described embodiment or modified examples, and the same effects as those of the above-described embodiment or modified examples can be obtained.

[0220] The above-mentioned embodiments or modified examples may be used in combination as appropriate. The processing procedure and processing conditions in this case may be, for example, the same as those in the above-mentioned embodiments or modified examples.

[0221] Explanation of symbols

[0222] 100, 200, 300...substrate processing equipment

[0223] 400…Controller

[0224] S…Substrate.

Claims

1. A substrate processing device, characterized in that: have: a processing chamber for processing a substrate; a dielectric plate disposed in the processing chamber; an electromagnetic wave supplying unit that supplies electromagnetic waves to the dielectric plate; a heating medium supply unit capable of supplying a heating medium to the dielectric plate; and The control unit is configured to control the supply of the heating medium to the dielectric plate if the temperature of the dielectric plate is equal to or lower than a predetermined temperature before processing the substrate.

2. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus further includes a temperature measuring unit capable of measuring a temperature of the dielectric plate.

3. The substrate processing apparatus according to claim 1, wherein: In a state where the heating medium is supplied from the heating medium supply unit to the dielectric plate, plasma of the heating medium is generated in the processing chamber.

4. The substrate processing apparatus according to claim 3, wherein: A substrate support portion having a plurality of support surfaces is further provided in the processing chamber, wherein the support surfaces are capable of supporting the substrate. During the generation of the plasma, the support surface is not maintained directly below the dielectric plate.

5. The substrate processing apparatus according to claim 3, wherein: A substrate support portion having a support surface is further provided in the processing chamber, wherein the support surface is capable of supporting the substrate. The support surface and the dielectric plate move relative to each other during at least a portion of a period during which the plasma is generated.

6. The substrate processing apparatus according to claim 3, wherein: A substrate support portion having a plurality of support surfaces is further provided in the processing chamber, wherein the support surfaces are capable of supporting the substrate. The substrate support portion is rotatable, The support surface is rotated during at least a portion of a period during which the plasma is generated.

7. The substrate processing apparatus according to claim 1, wherein: The substrate processing device further includes a heating unit. The space between the heating portion and the dielectric plate is filled with the heating medium, and the heating portion heats the heating medium.

8. The substrate processing apparatus according to claim 1, wherein: providing a plurality of the dielectric plates, The control unit can adjust the temperature of each dielectric plate.

9. The substrate processing apparatus according to claim 8, wherein: providing a plurality of the dielectric plates, After each of the dielectric plates reaches a target temperature, the control unit carries in the next substrate.

10. The substrate processing apparatus according to claim 1, wherein providing a plurality of the dielectric plates, The control unit can control the irradiation amount of the electromagnetic wave irradiated to the dielectric plate for each dielectric plate.

11. The substrate processing apparatus according to claim 1, wherein: The substrate processing device is further provided with a waveguide corresponding to the dielectric plate. A gate capable of limiting the movement of the electromagnetic wave is provided in each of the waveguides.

12. The substrate processing apparatus according to claim 1, wherein: providing a plurality of the dielectric plates, The heating medium supply unit can supply the heating medium to each of the dielectric plates.

13. The substrate processing apparatus according to claim 1, wherein A substrate support portion having a support surface is further provided in the processing chamber, wherein the support surface is capable of supporting the substrate. The dielectric plate includes: a first dielectric plate located opposite to the substrate supported on the substrate support portion and facing the center of the substrate; and a second dielectric plate arranged in a surrounding shape with the first dielectric plate as the center. The control unit can independently increase the temperature of the first dielectric plate and the temperature of the second dielectric plate.

14. The substrate processing apparatus according to claim 13, wherein: The substrate processing apparatus further includes an exhaust unit configured to exhaust the atmosphere in the processing chamber from the outer periphery of the substrate support unit. The heating time for the second dielectric plate is controlled to be longer than that for the first dielectric plate.

15. The substrate processing apparatus according to claim 13, wherein: The plurality of second dielectric plates are arranged in a surrounding shape with the first dielectric plate as the center.

16. The substrate processing apparatus according to claim 2, wherein: providing a plurality of the dielectric plates, The temperature measuring unit is provided next to the dielectric plate.

17. The substrate processing apparatus according to claim 1, wherein: providing a plurality of the dielectric plates, If the temperature difference between the plurality of dielectric plates is within a predetermined range, the substrate to be processed next is loaded into the processing chamber.

18. A substrate processing method, characterized in that: Has the following processes: Before processing the substrate, if the temperature of the dielectric plate is below a predetermined temperature, supplying a heating medium to the dielectric plate; and While the substrate is held in a processing chamber, electromagnetic waves are supplied to the dielectric plate and a processing gas is supplied to the processing chamber to process the substrate.

19. A method for manufacturing a semiconductor device, characterized in that: Has the following processes: Before processing the substrate, if the temperature of the dielectric plate is below a predetermined temperature, supplying a heating medium to the dielectric plate; and While the substrate is held in a processing chamber, electromagnetic waves are supplied to the dielectric plate and a processing gas is supplied to the processing chamber to process the substrate.

20. A program, characterized in that The computer enables the substrate processing device to perform the following process: Before processing the substrate, if the temperature of the dielectric plate is below a predetermined temperature, supplying a heating medium to the dielectric plate; and While the substrate is held in a processing chamber, electromagnetic waves are supplied to the dielectric plate and a processing gas is supplied to the processing chamber to process the substrate.

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