Branch argon control method and device, electronic equipment and medium

Abstract

The invention discloses a branch argon gas control method and system, electronic equipment and a medium, and the method comprises the following steps: obtaining the diameter of a throat flange of a single crystal furnace and the diameter of a single crystal to be pulled, determining the introduction mode of branch argon gas based on the diameter of the throat flange and the diameter of the single crystal to be pulled, and then controlling the introduction of the branch argon gas based on the introduction mode. With the adoption of the method, shaking caused by blowing of branch argon to the steel cable / single crystal can be reduced, so that the problem that the single crystal cannot stably grow is reduced, and the crystal forming quality of the single crystal is improved; and moreover, the problem that oxides are accumulated at the throat flange can be avoided, the growth of single crystals in the single crystal furnace is protected, the stable growth of the single crystals is further ensured, and the crystal forming quality of the single crystals is improved.

Description

Technical Field

[0001] The present invention relates to the field of single crystal manufacturing, and in particular to a method, device, electronic equipment and medium for controlling branch argon gas during single crystal pulling. Background Art

[0002] At present, in addition to the argon vent hole on the top of the auxiliary chamber, a branch argon vent hole 20 (such as Figure 1 As shown), and the outlet of the branch argon vent 20 faces the inner annular space of the throat flange. Summary of the Invention

[0003] The purpose of the present invention is to overcome the above-mentioned shortcomings and provide a method, system, electronic equipment and medium for controlling branch argon gas, which can ensure the stable growth of crystals and the quality of single crystals.

[0004] To achieve the above purpose, the technical approach adopted by the present invention is:

[0005] A method for controlling branch argon gas, comprising:

[0006] Obtain the throat flange diameter of the single crystal furnace and the diameter of the single crystal to be pulled;

[0007] Determine the branch argon gas introduction method based on the throat flange diameter and the diameter of the single crystal to be pulled;

[0008] The introduction of the branch argon gas is controlled based on the introduction method.

[0009] Optionally, the introduction method includes the introduction of the entire process of the single crystal pulling process and the introduction of part of the process steps.

[0010] Optionally, the partial process steps include a slag sticking process step and a re-investment process step.

[0011] Optionally, determining the branch argon gas introduction method based on the throat flange diameter and the diameter of the single crystal to be pulled includes:

[0012] If the throat flange diameter is greater than the first preset value, or the throat flange diameter is less than or equal to the first preset value and the diameter of the single crystal to be pulled is greater than or equal to the second preset value, it is determined that the branch argon gas introduction method is full-process introduction; if the throat flange diameter is less than or equal to the first preset value, and the diameter of the single crystal to be pulled is less than the second preset value, it is determined that the introduction method is partial-step introduction.

[0013] Optionally, when the branch argon gas is introduced in a partial process step, when performing a process step that does not require the introduction of branch argon gas, the amount of argon gas introduced into the top of the single crystal furnace is immediately adjusted to the sum of the original top argon gas introduction amount and the branch argon gas introduction amount.

[0014] Optionally, during the process of pulling a single crystal, the shaking amplitude of the steel cable or the single crystal is detected throughout the entire process. If the shaking amplitude of the steel cable or the single crystal is greater than a preset value, an alarm is triggered.

[0015] Optionally, visual inspection is used to detect the shaking amplitude of the steel cable or single crystal.

[0016] A branch argon gas control device includes: an information acquisition module for acquiring information about the diameter of a single crystal furnace throat flange and the diameter of a single crystal to be pulled;

[0017] The method determination module determines the branch argon gas introduction method based on the single crystal furnace throat flange diameter and the diameter of the single crystal to be pulled;

[0018] The branch argon gas control module controls the introduction of branch argon gas based on the introduction method of branch argon gas.

[0019] An electronic device comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the branch argon gas control method when executing the program; or, the processor is configured to be configured to be configured in the branch argon gas control device.

[0020] A computer-readable storage medium, characterized in that a computer program is stored thereon, which implements the branch argon gas control method when executed by a processor, or the computer program is used to enable the processor to be configured in the branch argon gas control device.

[0021] Because the present invention adopts the above technical approach, it has the following beneficial effects:

[0022] The method of introducing branch argon gas is determined based on the diameter of the throat flange and the diameter of the single crystal to be pulled, and the branch argon gas is selectively introduced. This not only reduces the shaking caused by the branch argon gas blowing on the steel cable / single crystal, thereby reducing the problem of unstable growth of the single crystal caused by this, and thus improving the quality of single crystal crystallization; it also avoids the problem of oxide accumulation at the throat flange, protects the growth of single crystals in the single crystal furnace, further ensures the stable growth of single crystals, and improves the quality of single crystal crystallization. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of setting a branch argon vent hole for a conventional throat flange;

[0024] Figure 2 This is a schematic flow chart of the branch argon gas control method of the present invention;

[0025] Figure 3 Schematic diagram of the branch argon control device of the present invention. DETAILED DESCRIPTION

[0026] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0027] However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the detailed description below, for ease of explanation, many specific details have been set forth to provide a comprehensive understanding of the embodiments of the present invention. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, the description of known techniques has been omitted to avoid unnecessarily confusing the concept of the present invention.

[0028] The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The term "comprising" used herein indicates the presence of features, steps, or steps, but does not exclude the presence or addition of one or more other features.

[0029] When expressions such as “at least one of A, B, and C, etc.” are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (e.g., “a system having at least one of A, B, and C” should include but is not limited to systems having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, and C, etc.). When expressions such as “at least one of A, B, or C, etc.” are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (e.g., “a system having at least one of A, B, or C” should include but is not limited to systems having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, and C, etc.).

[0030] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0031] It should be noted that, unless it is clearly stated that there is a sequence of execution between different steps shown in the flowchart in the embodiment of the present invention, or there is a sequence of execution between different steps in technical implementation, otherwise, the execution order between multiple steps may not be prioritized, and multiple steps may also be executed simultaneously.

[0032] The throat flange is the smallest point in the single crystal furnace, making it a prone location for oxides to accumulate within the furnace. Introducing argon into the inner annular space of the flange through the branch argon vent 2 can prevent this accumulation and the resulting single crystal quality issues. However, current single crystal pulling generally utilizes a full-process branch argon flow, meaning branch argon is purged throughout the entire single crystal pulling process. Direct purging of the steel cable / crystal with branch argon can cause it to wobble, introducing instability to crystal growth and affecting single crystal quality.

[0033] like Figure 2 As shown, the present invention discloses a method for controlling branch argon gas, which is characterized by comprising:

[0034] Obtain the throat flange diameter of the single crystal furnace and the diameter of the single crystal to be pulled;

[0035] Determine the branch argon gas introduction method based on the throat flange diameter and the diameter of the single crystal to be pulled;

[0036] The introduction of the branch argon gas is controlled based on the introduction method.

[0037] It can be understood that the argon gas outputted from the branch argon gas vent is the branch argon gas.

[0038] After one single crystal is pulled, the next one is pulled. The above branch argon gas control method is repeated until the pulling process of the single crystal furnace is completed. During the pulling process of multiple single crystals, if the crucible is insufficient, the established single crystal pulling process determines whether to re-feed. This re-feed can be a single operation or multiple times.

[0039] In this embodiment, the introduction method includes the introduction of the entire process of the single crystal pulling process and the introduction of part of the process steps.

[0040] It is understandable that, under the premise of being able to achieve the effect of reducing crystal shaking, the introduction method can also be other situations, such as adjusting the flow ratio of branch argon gas and regular argon gas in steps.

[0041] The method of determining the branch argon gas introduction method based on the throat flange diameter and the diameter of the single crystal to be pulled includes: if the throat flange diameter is greater than the first preset value, or the throat flange diameter is less than or equal to the first preset value and the diameter of the single crystal to be pulled is greater than or equal to the second preset value, determining that the branch argon gas introduction method is full-process introduction; if the throat flange diameter is less than or equal to the first preset value, and the diameter of the single crystal to be pulled is less than the second preset value, determining that the introduction method is partial-step introduction.

[0042] Specifically, a judgment is first made based on the diameter of the single crystal furnace throat flange. If the diameter of the single crystal furnace throat flange is greater than a first preset value, the branch argon gas is introduced throughout the entire single crystal pulling process, that is, the branch argon gas is kept open throughout the entire single crystal pulling process. If the diameter of the single crystal furnace throat flange is ≤ the first preset value, a judgment is then made based on the diameter of the single crystal to be pulled. That is, on the basis that the diameter of the single crystal furnace throat flange is ≤ the first preset value, if the specification of the single crystal to be pulled is ≥ the second preset value, the branch argon gas is introduced throughout the entire single crystal pulling process, that is, the branch argon gas is kept open throughout the entire process. If the diameter of the single crystal to be pulled is less than the second preset value, the branch argon gas is introduced in such a way that some steps in the single crystal pulling process require the introduction of branch argon gas.

[0043] The diameter of the throat flange is generally determined by the model of the single crystal furnace. In the current CZ single crystal pulling industry, different models of single crystal furnaces have different factory-set throat flange diameters. This means that single crystal furnaces of the same model have the same throat flange diameter when they leave the factory. Currently, single crystal furnaces on the market typically have models of 105, 110, 120S, 140, 160, 160S, and 180. Larger numbers indicate larger throat flange diameters. The factory-set throat flange diameter for a 120S single crystal furnace is set to a maximum allowable single crystal size of 295.

[0044] In a preferred embodiment of the present invention, the first preset throat flange diameter is the factory-set throat flange diameter for a 120S single crystal furnace. This means that, among the single crystal furnace models listed above, without equipment modification, for single crystal furnaces 120S and above, i.e., models 140, 160, 160S, and 180, the branch argon gas flow remains open throughout the entire single crystal pulling process, regardless of the diameter of the single crystal being pulled. For models 105, 110, and 120S, the preset value is determined based on the diameter of the single crystal being pulled.

[0045] The second preset value of the diameter of the single crystal to be pulled is the diameter of the single crystal corresponding to the single crystal specification of 256.

[0046] The single crystal diameters corresponding to the single crystal specifications in the current single crystal field are shown in Table 1 below:

[0047]

[0048] During actual production, the throat flange of the single crystal furnace may be modified based on actual needs. Therefore, when acquiring information, the latest throat flange diameter information for the corresponding single crystal furnace must be obtained. In other words, each time the throat flange of the single crystal furnace is modified, the relevant information must be stored to ensure the accuracy of subsequent information acquisition and, therefore, the accuracy of the branch argon gas introduction method.

[0049] In addition, because the single crystal pulling process will also be updated and the production of the single crystal furnace itself will continue to develop, in other embodiments, the first preset value and the second preset value can be adaptively modified according to the subsequent single crystal pulling process, the update of the single crystal furnace itself and actual needs.

[0050] The present invention relies on the above-mentioned determination sequence and conditions because a larger throat flange diameter indicates a larger single crystal furnace and a larger maximum diameter of the single crystal that can be pulled. In this case, when the diameter of the pulled single crystal is larger, that is, greater than or equal to the second preset value, the single crystal is heavy, and the argon gas output from the branch argon vent will not cause the single crystal to shake. When the diameter of the pulled single crystal is less than the second preset value, the distance between the steel cable or single crystal and the branch argon vent is still relatively far, and the branch argon gas is insufficient to cause the single crystal rod to shake. Therefore, when the throat flange diameter is greater than the first preset value, branch argon gas can be provided throughout the process. When the throat flange diameter is relatively small, that is, less than or equal to the first preset value, the single crystal has a large diameter and correspondingly large weight, and is not easily affected by the branch argon gas and shakes. When the single crystal has a small diameter and correspondingly small weight, and because the throat flange diameter is relatively small, the distance between the steel cable or single crystal and the branch argon vent is relatively small, and is easily affected by the branch argon gas and shakes. Therefore, when the diameter of the throat flange is less than or equal to the first preset value, it is set to determine whether the branch argon gas is introduced in the entire process or in part of the process steps according to the diameter of the single crystal to be pulled.

[0051] In this embodiment, when the partial-step introduction method is used, the partial steps preferably include the slag sticking step and the re-feeding step. That is, when the partial-step introduction method is used, the argon branch gas flow must be turned on during the re-feeding and slag sticking steps, while the argon branch gas flow must be turned off during other steps, such as temperature stabilization, seeding, shoulder expansion, shoulder rotation, diameter equalization, and finishing. This setting is based on experience gained through verification of numerous actual single crystal pulling processes and the data collected from the pulling process and single crystal performance data obtained from countless single crystal test pulls.

[0052] The reason why branch argon gas is introduced in the re-throwing step is that the re-throwing barrel needs to pass through the throat flange and then be re-thrown in a fixed position. The gap between the outer wall of the re-throwing barrel and the inner wall of the throat flange is small, and the oxides in the furnace are more likely to accumulate here. Therefore, it is necessary to introduce branch argon gas for purging in the re-throwing step to prevent the oxides in the furnace from accumulating between the outer wall of the re-throwing barrel and the inner wall of the throat flange, thereby making the single crystal growth environment in the single crystal furnace better.

[0053] The branch argon gas is introduced into the slag sticking step because when sticking slag, the slag sticking device is suspended at the lower end of the steel cable to stick slag. If the argon gas purge can make the steel cable shake, it will not only not affect the slag sticking effect, but the shaking steel cable can drive the slag sticking device to move to different positions to stick slag, thereby making the slag sticking effect better.

[0054] During specific execution, if the branch argon gas is introduced in a manner that the branch argon gas is introduced throughout the entire process of the single crystal pulling process, there is no need to identify the work steps, and the branch argon gas is directly turned on during the entire process of pulling the single crystal; if the branch argon gas is introduced in a manner that the branch argon gas is introduced in some of the work steps of the single crystal pulling process, it is necessary to identify the work steps, and then the branch argon gas is turned on and off based on the work step identification results. That is to say, when it is identified that a work step that requires the introduction of branch argon gas is entered or when the previous work step of the work step is identified to have ended, the branch argon gas is turned on; when it is identified that a work step that requires the closing of branch argon gas is entered or when the previous work step of the work step is identified to have ended, the branch argon gas is turned off. In this way, the control of the branch argon gas is achieved.

[0055] Specifically, if the branch argon gas is introduced in a manner such that some steps in the single crystal pulling process require opening the branch argon gas, during the specific implementation, if it is detected that the re-feeding process or the slag sticking process has begun, the branch argon gas will be opened. Or if it is detected that the previous step of the re-feeding process or the slag sticking process has ended, the branch argon gas will be opened. This principle is also used when the branch argon gas needs to be closed in other steps.

[0056] As mentioned above, in any single process step, the state of the branch argon gas remains unchanged. If the branch argon gas is to be closed, the branch argon gas is in the closed state from the beginning to the end of the process step. If the branch argon gas is to be introduced, the branch argon gas is in the open state from the beginning to the end of the process step. Instead of the branch argon gas being opened and closed in a certain process step, this setting is because after the branch argon gas is opened, the argon gas is blown towards the inner ring of the throat flange. In addition to blowing away the oxides and dust there, the gas blow will inevitably bring about temperature changes. If the branch argon gas is opened and closed, the temperature at the throat flange will fluctuate. For the growing single crystal, the temperature felt at the throat flange will also fluctuate, which will seriously affect the growth quality of the single crystal in this process step and even affect the crystallization.

[0057] As described above, the present invention determines the method of introducing branch argon gas based on the diameter of the throat flange and the diameter of the single crystal to be pulled, that is, selectively introducing branch argon gas. In this way, it can not only reduce the shaking caused by the branch argon gas blowing on the steel cable / single crystal, thereby reducing the problem of unstable growth of the single crystal caused by this, and thus improving the quality of single crystal crystallization; it can also avoid the problem of oxide accumulation at the throat flange, protect the growth of single crystals in the single crystal furnace, further ensure the stable growth of single crystals, and improve the quality of single crystal crystallization.

[0058] To further ensure the stability of single crystal growth, when the branch argon gas injection method is partial process step, the argon gas injection rate at the top of the single crystal furnace is immediately adjusted to the sum of the original top argon gas injection rate and the branch argon gas injection rate during the process step that does not require argon gas injection. In this way, the total argon gas injection rate in the single crystal furnace is maintained constant, ensuring the pressure in the single crystal furnace remains constant, thereby ensuring the stability of single crystal growth.

[0059] In some preferred embodiments of the present invention, during the process of pulling a single crystal, the shaking amplitude of the steel cable or the single crystal is detected throughout the entire process. If the shaking amplitude of the steel cable or the single crystal is greater than a preset value, it indicates an abnormality and an alarm is triggered.

[0060] The wobble amplitude refers to the offset of the cable or crystal's central axis relative to a preset initial position on the fixed surface. This initial position is the position of the cable or crystal's central axis on the fixed surface before crystal pulling begins, assuming no wobble. A typical preset value is 2 mm.

[0061] For example, visual inspection can be used to determine the amplitude of the wobbling of the steel cable or single crystal. Alternatively, visual inspection can be performed using the CCD camera and controller included in the single crystal furnace. It is understood that in the early stages of crystal pulling, the length of the single crystal is relatively small, and the CCD camera's field of view primarily contains the steel cable. Later, as the length of the single crystal increases, the single crystal replaces the steel cable and appears within the CCD camera's field of view. Given that both the steel cable and the single crystal are approximately circular, the displacement of their outer edges aligns with the displacement of their corresponding central axes. To facilitate detection, the distance between the outer edge of the steel cable or single crystal and the lower edge of the guide tube at a selected position on a fixed plane can be used as the wobbling amplitude, determined through image processing. The fixed plane is the plane of the lower edge of the guide tube, and the selected position is a visible position on the lower edge of the guide tube within the image. For accurate detection, the positional relationship between the guide tube and the steel cable must be calibrated before testing, so that the central axis of the steel cable coincides with the central axis of the guide tube. This calibration method is conventional in the art and will not be detailed here.

[0062] Optionally, after an alarm, the single crystal furnace and single crystal pulling process are first inspected. If any abnormalities are detected, corrections are made. After corrections, single crystal pulling is restarted from the temperature stabilization step. If two consecutive alarms occur and no abnormalities are detected, it means that the offset setting does not meet the actual requirements and the preset offset value needs to be readjusted. The preset offset value should be adjusted reasonably based on empirical data.

[0063] like Figure 3 As shown, the present invention also discloses a branch argon gas control device, which includes:

[0064] Information acquisition module 1, used to obtain the throat flange diameter of the single crystal furnace and the diameter of the single crystal to be pulled;

[0065] Method determination module 2, based on the throat flange diameter and the diameter of the single crystal to be pulled, determines the branch argon gas introduction method;

[0066] The branch argon gas control module 3 controls the introduction of the branch argon gas based on the introduction method of the branch argon gas during the single crystal pulling process.

[0067] When a single crystal is to be pulled, the system starts to operate to implement the branch argon gas control method. When the pulling of a single crystal furnace is completed, the system is exited.

[0068] The branch argon control device also includes a single crystal pulling step identification module 4, which is used to identify the current single crystal pulling step of the single crystal furnace, so that when the branch argon is introduced in a manner such that some steps in the single crystal pulling process require the branch argon to be turned on, the branch argon control module 3 executes the switching of the branch argon at the corresponding step according to the step identification result.

[0069] In some embodiments of the present invention, the information module obtains information from an MES system, which is an existing master control system. The MES system stores all relevant information about single crystal pulling. Each time a single crystal furnace is modified, the relevant information is uploaded to the MES system for storage. The MES updates and saves different versions of information. This ensures that the information acquisition module 1 subsequently obtains the latest information about the single crystal furnace, thereby preventing the method determination module 2 from incorrectly obtaining source information and causing errors in the branch argon gas introduction method, thereby leading to single crystal pulling quality problems. The MES system is existing technology, and the information exchange between the information acquisition module 1 and the MES system can also be any known technology, so it will not be described in detail here.

[0070] In some embodiments of the present invention, the branch argon gas control module is a PLC, each PLC controlling a single crystal furnace. The PLC executes the single crystal pulling process for the corresponding single crystal furnace. That is, before single crystal pulling, the PLC has already acquired the single crystal pulling process information and thus executes the single crystal pulling process according to the corresponding process. Furthermore, the PLC is configured to exchange information with the method determination module 2. After the method determination module 2 transmits the branch argon gas introduction method to the PLC, the PLC, while executing the single crystal pulling process, turns on the branch argon gas throughout the entire process according to the branch argon gas introduction method, or turns on or off the branch argon gas at the corresponding process step.

[0071] Because the PLC has acquired the single crystal pulling process information, it can identify the single crystal working steps by itself, that is, the PLC has the functions of both the branch argon gas control module and the single crystal pulling step identification module.

[0072] In some other embodiments of the present invention, a single crystal pulling step identification module may be provided in addition to the PLC. When the PLC executes the single crystal pulling process according to the predetermined step, the single crystal pulling step identification module monitors and identifies the step in real time, and compares the monitoring and identification information with the predetermined single crystal pulling process. Only when the step identified by the single crystal pulling step identification module is consistent with the step actually executed by the PLC can the PCL start and stop the branch argon gas at the predetermined time. If there is a discrepancy, it indicates a problem with the relevant equipment or system, and single crystal pulling must be suspended. Normal single crystal pulling operations can only be resumed after comprehensive maintenance. This ensures that the single crystal furnace is not damaged and further guarantees the quality of single crystal pulling.

[0073] In this embodiment, the opening / closing of the branch argon gas is not achieved by switching a float flowmeter as conventionally done, but by directly switching a valve that controls the branch argon gas. The valve may be an electromagnetic valve, which is more convenient to control on or off.

[0074] The branch argon gas control device also includes a visual detection system for detection. The visual detection system includes a CCD camera arranged on the main chamber and a processor connected to the CCD camera. The processor determines the shaking amplitude of the steel cable based on the steel cable situation photographed by the CCD camera.

[0075] The present invention also discloses an electronic device, which includes a memory, a processor and a computer program stored in the memory and runnable on the processor. When the processor executes the program, the above-mentioned branch argon gas control method is implemented, or the processor is configured to be configured in the above-mentioned branch argon gas control device, so that the branch argon gas control device can automatically control the branch argon gas switch.

[0076] The electronic device can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using a software program, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer-executable instructions. When the computer-executable instructions are loaded and executed on a computer, the process or function according to the above method is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer-executable instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer-executable instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means.

[0077] The present invention also discloses a storage medium having a computer program stored therein, which, when executed by a processor, implements the above-mentioned branch argon gas control method. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that includes one or more servers that can be integrated with the medium. The available medium can be any feasible medium, such as a magnetic medium (e.g., a floppy disk, a hard disk, or a magnetic tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid state disk (SSD)).

[0078] So far, the embodiments of the present invention have been described in detail with reference to the accompanying drawings. It should be noted that any implementations not shown or described in the accompanying drawings or the main text of the specification are known to those skilled in the art and are not described in detail.

[0079] Those skilled in the art will appreciate that various combinations and / or combinations of features described in the various embodiments and / or claims of the present invention may be made, even if such combinations and / or combinations are not explicitly described in the present invention. In particular, various combinations and / or combinations of features described in the various embodiments and / or claims of the present invention may be made, without departing from the spirit and teachings of the present invention. All such combinations and / or combinations fall within the scope of the present invention.

[0080] The specific embodiments described above further illustrate the objectives, technical methods and beneficial effects of the present invention in detail. It should be understood that the above are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for controlling branch argon gas, characterized in that: include: Obtain the throat flange diameter of the single crystal furnace and the diameter of the single crystal to be pulled; Determine the branch argon gas introduction method based on the throat flange diameter and the diameter of the single crystal to be pulled; The introduction of the branch argon gas is controlled based on the introduction method.

2. The method for controlling branch argon gas according to claim 1, characterized in that: The introduction method includes the introduction of the entire process of the single crystal pulling process and the introduction of part of the process steps.

3. The method for controlling branch argon gas according to claim 2, characterized in that: The partial working steps include a slag sticking step and a re-investing step.

4. The method for controlling branch argon gas according to claim 2 or 3, characterized in that: The method of introducing branch argon gas based on the throat flange diameter and the diameter of the single crystal to be pulled includes: If the diameter of the throat flange is greater than the first preset value, or the diameter of the throat flange is less than or equal to the first preset value and the diameter of the single crystal to be pulled is greater than or equal to the second preset value, it is determined that the branch argon gas introduction mode is full-process introduction; If the diameter of the throat flange is less than or equal to the first preset value, and the diameter of the single crystal to be pulled is less than the second preset value, it is determined that the feeding method is partial step feeding.

5. The method for controlling branch argon gas according to claim 4, characterized in that: When the branch argon gas is introduced in a partial process step, the argon gas introduction amount at the top of the single crystal furnace is immediately adjusted to the sum of the original top argon gas introduction amount and the branch argon gas introduction amount during the process step that does not require the introduction of branch argon gas.

6. The method for controlling branch argon gas according to any one of claims 1 to 3 and 5, characterized in that: During the process of pulling single crystals, the shaking amplitude of the steel cable or single crystal is detected throughout the entire process. If the shaking amplitude of the steel cable or single crystal is greater than the preset value, an alarm will be issued.

7. The method for controlling branch argon gas according to claim 6, characterized in that: Use visual inspection to detect the shaking amplitude of the steel cable or single crystal.

8. A branch argon gas control device, characterized by: It includes The information acquisition module is used to obtain the diameter of the single crystal furnace throat flange and the diameter of the single crystal to be pulled; A mode determination module determines a mode for introducing branch argon gas based on the diameter of the single crystal furnace throat flange and the diameter of the single crystal to be pulled; The branch argon gas control module controls the introduction of the branch argon gas based on the introduction method of the branch argon gas.

9. An electronic device, characterized in that: It comprises a memory, a processor and a computer program stored in the memory and running on the processor, wherein when the processor executes the program, the branch argon control method of any one of claims 1 to 7 is implemented; or, the processor is configured to be configured in the branch argon control device according to claim 8.

10. A computer-readable storage medium, characterized in that: A computer program is stored thereon, which implements the method described in any one of claims 1 to 7 when executed by a processor, or the computer program is used to enable the processor to be configured in the branch argon gas control device described in claim 8.

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