Evaporation mask, evaporation mask with frame, method for manufacturing evaporation mask, method for manufacturing organic device, and method for manufacturing evaporation mask with frame

Abstract

The present application provides an evaporation mask, an evaporation mask with a frame, a method for manufacturing an evaporation mask, a method for manufacturing an organic device, and a method for manufacturing an evaporation mask with a frame. The evaporation mask includes a mask substrate containing silicon, a mask layer having a first surface and a second surface located on the opposite side of the first surface and facing the mask substrate, and a through-hole penetrating the mask layer. The mask substrate has a substrate opening. In a plan view, the through-hole is located within the substrate opening. The mask layer has a mask main layer forming the first surface and a mask intermediate layer located between the mask main layer and the mask substrate. The mask main layer contains a metal material. In a plan view, the outer edge of the mask main layer is located closer to the inner side than the outer edge of the mask intermediate layer.

Description

Evaporation mask, framed evaporation mask, method for manufacturing evaporation mask, method for manufacturing organic devices, and method for manufacturing framed evaporation mask.

[0001] This application is a divisional application. The original application has the application number 202380019193.2, the application date is January 30, 2023, and the invention title is "evaporation mask, evaporation mask with frame, method for manufacturing evaporation mask, method for manufacturing organic device and method for manufacturing evaporation mask with frame". Technical Field

[0002] This invention relates to vapor deposition masks, framed vapor deposition masks, methods for manufacturing vapor deposition masks, methods for manufacturing organic devices, and framed vapor deposition masks. Background Technology

[0003] Display devices used in portable devices such as smartphones and tablets are preferably high-definition, for example, with a pixel density of 400 ppi or higher. Furthermore, the demand for ultra-high definition (UHD) in portable devices is also increasing; in this case, a pixel density of 800 ppi or higher is preferred, for example.

[0004] In display devices, organic EL (Organic Electron) displays, as an example of organic devices, have attracted attention due to their good responsiveness, low power consumption, and high contrast. As a method for forming pixels in an organic EL display device, a method is known to form pixels using a vapor deposition mask with through-holes arranged in the desired pattern. Specifically, firstly, a vapor deposition mask is assembled onto a vapor deposition substrate for an organic EL display device. Next, a vapor deposition material containing organic material is deposited onto the vapor deposition substrate through the through-holes of the vapor deposition mask. Thus, a vapor deposition layer (or a light-emitting layer of the organic EL display device) containing vapor deposition material can be formed on the vapor deposition substrate as pixels with the same pattern as the through-holes of the vapor deposition mask (see, for example, Patent Documents 1-3).

[0005] As an example of the manufacturing method of such vapor deposition masks, it is known to form through holes in a metal plate by using an etching process of photolithography.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent No. 5382259

[0009] Patent Document 2: Korean Patent No. 10-1812772

[0010] Patent Document 3: Japanese Patent Application Publication No. 2010-116579 Summary of the Invention

[0011] The problem that the invention aims to solve

[0012] The purpose of this invention is to provide vapor deposition masks that can improve precision, framed vapor deposition masks, methods for manufacturing vapor deposition masks, methods for manufacturing organic devices, and methods for manufacturing framed vapor deposition masks.

[0013] Methods for solving problems

[0014] The vapor deposition mask of the present invention comprises: a mask substrate comprising silicon; a mask layer having a first surface and a second surface located opposite the first surface and facing the mask substrate; and a through-hole penetrating the mask layer. The mask substrate has a substrate opening. In plan view, the through-hole is located within the substrate opening. The mask layer comprises: a mask body layer forming the first surface; and a mask intermediate layer located between the mask body layer and the mask substrate. The mask body layer comprises a metallic material.

[0015] The framed vapor deposition mask of the present invention comprises: the vapor deposition mask described above; and a frame that supports a mask substrate of the vapor deposition mask.

[0016] The method for manufacturing a vapor deposition mask according to the present invention includes: a substrate preparation step, preparing a mask substrate comprising silicon; a mask layer formation step; a mask layer formation step; a substrate opening formation step; and a through-hole formation step. In the mask layer formation step, a mask layer is formed on the mask substrate, the mask layer having a first surface and a second surface located opposite to the first surface and facing the mask substrate. In the substrate opening formation step, a substrate opening is formed on the mask substrate. In the through-hole formation step, a through-hole is formed penetrating the mask layer. Viewed from above, the through-hole is located within the substrate opening. The mask layer formation step includes: a mask intermediate layer formation step, forming a mask intermediate layer on the surface of the mask substrate facing the mask layer; and a mask body layer formation step, forming a mask body layer on the surface of the mask intermediate layer opposite to the mask substrate. The mask body layer comprises a metallic material.

[0017] The method for manufacturing a vapor deposition mask according to the present invention includes: a substrate preparation step for preparing a mask substrate comprising silicon; a mask layer formation step; a substrate opening formation step; and a mask layer opening formation step. In the mask layer formation step, a mask layer is formed on the mask substrate, the mask layer having a first surface and a second surface located opposite to the first surface and facing the mask substrate. In the substrate opening formation step, a substrate opening is formed on the mask substrate. In the mask layer opening formation step, a mask layer opening is formed along the substrate opening in the mask layer when viewed from top view. The mask layer formation step includes: a mask intermediate layer formation step for forming a mask intermediate layer on the surface of the mask substrate facing the mask layer; and a mask body layer formation step for forming a mask body layer on the surface of the mask intermediate layer opposite to the mask substrate, and forming a through-hole penetrating the mask body layer. In the mask layer opening formation step, the mask layer opening is formed in the mask intermediate layer. When viewed from top view, the through-hole is located within the substrate opening. The mask body layer comprises a metallic material.

[0018] The method for manufacturing an organic EL device according to the present invention includes: a vapor deposition mask preparation step, wherein a vapor deposition mask is prepared by the above-described vapor deposition mask manufacturing method; a sealing step; and a vapor deposition step. In the sealing step, a first surface of the metal layer of the vapor deposition mask is sealed to a vapor deposition substrate. In the vapor deposition step, a vapor deposition material is deposited onto the vapor deposition substrate through through-holes in the vapor deposition mask to form a vapor deposition layer.

[0019] The method for manufacturing a framed vapor deposition mask of the present invention comprises: a vapor deposition mask preparation step, wherein a vapor deposition mask is prepared by the above-described vapor deposition mask manufacturing method; and a frame mounting step, wherein a frame is mounted on the mask substrate of the vapor deposition mask.

[0020] The effects of the invention

[0021] According to the present invention, precision can be improved. Attached Figure Description

[0022] Figure 1 is a diagram showing a vapor deposition apparatus equipped with a vapor deposition mask according to an embodiment of the present invention.

[0023] Figure 2 is a top view illustrating an embodiment of the vapor deposition mask of the present invention.

[0024] Figure 3 is a schematic diagram showing a cross section along line AA in Figure 2.

[0025] Figure 4 is a partially enlarged top view of the vapor deposition mask in Figure 2.

[0026] Figure 5A is a partially enlarged top view showing the through-hole group of the vapor deposition mask in Figure 4.

[0027] Figure 5B is a partially enlarged top view showing a modified example of the through-hole assembly of Figure 5A.

[0028] Figure 6 is a diagram illustrating the substrate preparation process of the method for manufacturing a vapor deposition mask according to an embodiment of the present invention.

[0029] Figure 7 is a diagram illustrating the second metal layer formation step in the manufacturing method of the vapor deposition mask according to an embodiment of the present invention.

[0030] Figure 8 is a diagram illustrating the first metal layer formation step in the manufacturing method of the vapor deposition mask according to an embodiment of the present invention.

[0031] Figure 9 is a diagram illustrating the resist layer formation process in the substrate opening formation process of the method for manufacturing a vapor deposition mask according to an embodiment of the present invention.

[0032] Figure 10 is a diagram illustrating the substrate etching process in the substrate opening formation process of the method for manufacturing a vapor deposition mask according to an embodiment of the present invention.

[0033] Figure 11A is a diagram showing the process of forming the first recess in the substrate etching process of Figure 10.

[0034] Figure 11B is a diagram illustrating the process of forming the first protective layer in the substrate etching process of Figure 10.

[0035] Figure 11C is a diagram showing the process of forming the second recess in the substrate etching process of Figure 10.

[0036] Figure 11D is a diagram showing the process of forming the second protective layer in the substrate etching process of Figure 10.

[0037] Figure 11E is a diagram showing the process of forming the fourth recess in the substrate etching process of Figure 10.

[0038] Figure 12 is a diagram illustrating the resist layer removal process in the substrate opening formation process of the method for manufacturing a vapor deposition mask according to an embodiment of the present invention.

[0039] Figure 13A is a diagram showing the state of laser irradiation on the metal layer during the through-hole formation process in the manufacturing method of the vapor deposition mask according to an embodiment of the present invention.

[0040] Figure 13B is a diagram showing a variation of Figure 13A.

[0041] Figure 13C is a schematic diagram showing the laser generating device of Figure 13B.

[0042] Figure 14 is a diagram showing the state in which a through hole is formed during the through hole forming process in the method for manufacturing a vapor deposition mask according to an embodiment of the present invention.

[0043] Figure 15A is a top view showing an example of an organic EL display device fabricated using a vapor deposition mask in an embodiment of the present invention, and is a top view showing the organic layer vapor-deposited in the vapor deposition process.

[0044] Figure 15B is a cross-sectional view of the organic EL display device of Figure 15A viewed from the BB direction.

[0045] Figure 16 is a cross-sectional schematic diagram showing a modified example of the vapor deposition mask shown in Figure 3.

[0046] Figure 17 is a diagram showing the resist layer formation process as a manufacturing method of the vapor deposition mask shown in Figure 16.

[0047] Figure 18 is a diagram showing the first metal layer formation process as a manufacturing method of the vapor deposition mask shown in Figure 16.

[0048] Figure 19 is a diagram showing the resist layer removal process as a manufacturing method of the vapor deposition mask shown in Figure 16.

[0049] Figure 20 is a diagram showing the substrate opening formation process as a manufacturing method of the vapor deposition mask shown in Figure 16.

[0050] Figure 21 is a diagram showing the mask layer opening formation process as a manufacturing method of the vapor deposition mask shown in Figure 16.

[0051] Figure 22A is a cross-sectional schematic diagram showing a modified example of the vapor deposition mask shown in Figure 3.

[0052] Figure 22B is a cross-sectional schematic diagram showing another variation of the vapor deposition mask shown in Figure 3.

[0053] Figure 23 is a top view showing a modified example of the vapor deposition mask shown in Figure 2.

[0054] Figure 24 is a partially enlarged top view showing a modified example of the vapor deposition mask shown in Figure 4.

[0055] Figure 25 is a top view showing a modified example of the vapor deposition mask shown in Figure 2.

[0056] Figure 26 is a schematic diagram showing a cross section along line CC of Figure 25.

[0057] Figure 27 is a top view showing a modified example of the vapor deposition mask shown in Figure 25.

[0058] Figure 28 is a top view showing a modified example of the vapor deposition mask shown in Figure 25.

[0059] Figure 29 is an enlarged top view showing a modified example of the substrate opening of the vapor deposition mask according to an embodiment of the present invention.

[0060] Figure 30 is an enlarged top view showing another variation of the substrate opening of the vapor deposition mask according to an embodiment of the present invention.

[0061] Figure 31 is an enlarged top view showing another variation of the substrate opening of the vapor deposition mask according to an embodiment of the present invention.

[0062] Figure 32 is a top view showing a modified example of the vapor deposition mask shown in Figure 25.

[0063] Figure 33 is a schematic diagram showing a cross section along line DD of Figure 32.

[0064] Figure 34 is a cross-sectional schematic diagram showing another variation of the vapor deposition mask shown in Figure 3.

[0065] Figure 35 is a top view showing another variation of the vapor deposition mask shown in Figure 25.

[0066] Figure 36 is a schematic diagram showing a cross section along line EE in Figure 35.

[0067] Figure 37 is a top view showing another variation of the vapor deposition mask shown in Figure 25.

[0068] Figure 38 is a schematic diagram showing a cross section along line FF of Figure 37.

[0069] Figure 39 is a diagram showing the insulating layer formation process as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0070] Figure 40 is a diagram showing the process of forming an insulating opening as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0071] Figure 41 is a diagram showing the first metal layer formation process as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0072] Figure 42 is a diagram showing the grinding process as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0073] Figure 43 is a diagram showing the process of forming the first mask protective layer as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0074] Figure 44 is a diagram showing the process of removing the insulating layer as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0075] Figure 45 is a diagram showing the process of forming the second mask protective layer as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0076] Figure 46 is a diagram showing the substrate opening formation process as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0077] Figure 47 is a diagram showing the mask layer opening formation process as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0078] Figure 48 is a diagram showing the second protective layer removal process as a manufacturing method of the vapor deposition mask shown in Figure 38.

[0079] Figure 49 is an enlarged top view showing a modified example of the first metal layer of the vapor deposition mask according to an embodiment of the present invention.

[0080] Figure 50 is a top view showing another variation of the vapor deposition mask shown in Figure 25.

[0081] Figure 51 is a schematic diagram showing a cross section along line GG of Figure 50. Detailed Implementation

[0082] In this specification and accompanying drawings, unless otherwise specified, the terms “substrate,” “material,” “plate,” “sheet,” or “film,” etc., which refer to the material that forms the basis of a structure, are not distinguished from each other merely based on different names.

[0083] In this specification and accompanying drawings, unless otherwise specified, terms such as “parallel”, “orthogonal”, or values ​​of length and angle that define shape, geometric conditions, and their degree are not limited to their strict meaning, but are interpreted to include the range of degrees to which the same function can be expected.

[0084] In this specification and accompanying drawings, unless otherwise specified, the terms "above" or "below," "on the upper side" or "on the lower side," or "above" or "below" refer to situations where a component or region is in direct contact with other structures. This also includes situations where one structure is indirectly in contact with another structure, where another structure is involved between them. Furthermore, unless otherwise specified, the vertical direction in terms such as "above," "on the upper side," "above," "below," "below," or "below" can be reversed.

[0085] In this specification and accompanying drawings, unless otherwise specified, the state of "facing each other" between the faces of element A and element B includes not only the case where the faces of element A and element B are in contact, but also the case where element C is located between the faces of element A and element B. That is, the term "facing each other" is used to indicate the orientation of the two faces.

[0086] In this specification and accompanying drawings, unless otherwise specified, the same or similar symbols are used to denote the same part or parts with the same function, and sometimes repeated descriptions are omitted. Additionally, for ease of explanation, the dimensions in the drawings may differ from the actual scale, and sometimes a part of the structure may be omitted from the drawings.

[0087] In this specification and accompanying drawings, unless otherwise specified, other embodiments or modifications may be combined within a scope that does not create contradiction. Furthermore, other embodiments, as well as other embodiments and modifications, may also be combined with each other within a scope that does not create contradiction. Additionally, modifications may also be combined with each other within a scope that does not create contradiction.

[0088] In this specification and accompanying drawings, unless otherwise specified, when multiple steps are disclosed regarding manufacturing methods or other methods, other undisclosed steps may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary as long as it does not create contradictions.

[0089] In this specification and accompanying drawings, unless otherwise specified, the numerical range indicated by the symbol “~” includes the numerical values ​​placed before and after the symbol “~”. For example, the numerical range defined by the expression “34 to 38% by mass” is the same as the numerical range defined by the expression “more than 34% by mass and less than 38% by mass”.

[0090] In this specification and accompanying drawings, unless otherwise specified, examples of vapor deposition masks and methods for manufacturing such masks for patterning organic materials on a substrate in a desired pattern during the manufacture of organic devices are described in one embodiment of this specification. However, this embodiment is not limited to such applications and can be applied to vapor deposition masks for various purposes.

[0091] Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings. The embodiments shown below are examples of embodiments of the present invention, and the present invention is not limited to these embodiments.

[0092] The first aspect of the present invention is a vapor deposition mask comprising:

[0093] A mask substrate containing silicon;

[0094] A mask layer having a first surface and a second surface located opposite the first surface and facing the mask substrate; and

[0095] A through hole that penetrates the aforementioned mask layer.

[0096] The aforementioned mask substrate has a substrate opening.

[0097] When viewed from above, the aforementioned through-hole is located within the aforementioned opening in the substrate.

[0098] The aforementioned mask layer comprises: a mask body layer forming the first surface; and a mask intermediate layer located between the mask body layer and the mask substrate.

[0099] The aforementioned mask body layer contains metallic material.

[0100] As a second aspect of the present invention, the vapor deposition mask in the first aspect described above can be:

[0101] The thickness of the intermediate layer of the mask is less than the thickness of the main body layer of the mask.

[0102] As a third aspect of the present invention, the vapor deposition mask in the first or second aspect described above may be:

[0103] The aforementioned mask intermediate layer includes a substrate side layer, which comprises gold, aluminum, chromium, nickel, titanium, titanium nitride, neodymium-containing aluminum alloy, silicon oxide, or silicon dioxide.

[0104] The aforementioned substrate side layer is in contact with the aforementioned mask body layer and with the aforementioned mask substrate.

[0105] As a fourth aspect of the present invention, the vapor deposition mask in the first or second aspect described above may be:

[0106] The aforementioned mask intermediate layer includes a main body side layer facing the aforementioned mask main body layer and a substrate side layer facing the aforementioned mask substrate.

[0107] The aforementioned main body side layer and the aforementioned substrate side layer are made of different metallic materials.

[0108] As a fifth aspect of the present invention, the vapor deposition mask in the fourth aspect described above can be:

[0109] The side layer of the aforementioned substrate contains gold, aluminum, chromium, nickel, titanium, titanium nitride, neodymium-containing aluminum alloy, silicon oxide, or silicon dioxide.

[0110] As a sixth aspect of the present invention, the vapor deposition mask in the fourth or fifth aspect described above may be:

[0111] The aforementioned main body side layer contains titanium, copper, nickel, or gold.

[0112] As a seventh aspect of the present invention, the vapor deposition mask in each of the fourth to sixth aspects described above may be:

[0113] The aforementioned mask intermediate layer includes an intermediate layer located between the aforementioned substrate side layer and the aforementioned body side layer.

[0114] The aforementioned intermediate layer is made of a different metallic material than the aforementioned main body side layer and the aforementioned substrate side layer.

[0115] As an eighth aspect of the present invention, the vapor deposition mask in the seventh aspect described above can be:

[0116] The aforementioned intermediate layer comprises titanium, titanium nitride, aluminum, neodymium-containing aluminum alloy, silicon oxide, silicon dioxide, nickel, copper, chromium, or gold.

[0117] As a ninth aspect of the present invention, the vapor deposition mask in each of the first to eighth aspects described above may be:

[0118] The metal material of the mask body layer is a magnetic metal material.

[0119] As a tenth aspect of the present invention, the vapor deposition mask in each of the first to ninth aspects described above may be:

[0120] The aforementioned mask substrate has a substrate body that defines the opening of the aforementioned substrate.

[0121] The aforementioned mask intermediate layer includes: a main body region located between the mask main body layer and the substrate main body; and an opening region located within the opening of the substrate when viewed from above.

[0122] The aforementioned through hole penetrates the aforementioned mask body layer and the aforementioned opening area.

[0123] As the eleventh aspect of the present invention, the vapor deposition mask in the above-described tenth aspect may be:

[0124] The opening size of the through hole in the second surface is larger than the opening size of the through hole in the first surface in the specified direction.

[0125] As a 12th aspect of the present invention, the vapor deposition mask in each of the first to ninth aspects described above may be:

[0126] The aforementioned mask substrate has a substrate body that defines the opening of the aforementioned substrate.

[0127] The aforementioned mask intermediate layer includes: a main body region located between the aforementioned mask main body layer and the aforementioned substrate main body; and

[0128] The mask layer opening is formed along the opening in the aforementioned substrate when viewed from above.

[0129] The aforementioned through hole penetrates the aforementioned mask body layer.

[0130] As a 13th aspect of the present invention, the vapor deposition mask in the above-described 12th aspect may be:

[0131] The opening size of the through hole in the face of the mask body layer facing the mask substrate in the specified direction is larger than the opening size of the through hole in the specified direction in the first face.

[0132] As a 14th aspect of the present invention, the vapor deposition mask in each of the first to 13th aspects described above may be:

[0133] The aforementioned mask layer has two or more of the aforementioned through holes.

[0134] When viewed from above, two or more of the aforementioned through holes are located within the aforementioned substrate opening.

[0135] As a 15th aspect of the present invention, the vapor deposition mask in the above-described 14th aspect may be:

[0136] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0137] When viewed from above, two or more of the aforementioned through-hole groups are located within the aforementioned substrate opening.

[0138] As a 16th aspect of the present invention, the vapor deposition mask in the above-described 14th aspect may be:

[0139] The aforementioned mask substrate has two or more of the aforementioned substrate openings.

[0140] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0141] When viewed from above, two or more of the aforementioned through-hole groups are located within each of the aforementioned substrate openings.

[0142] As a 17th aspect of the present invention, the vapor deposition mask in the above-described 14th aspect may be:

[0143] The aforementioned mask substrate has two or more of the aforementioned substrate openings.

[0144] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0145] When viewed from above, one of the aforementioned through-hole groups is located within each of the aforementioned substrate openings.

[0146] As the 18th aspect of the present invention, the vapor deposition mask in each of the first to 17 aspects described above may be:

[0147] The aforementioned substrate opening appears rectangular when viewed from above.

[0148] The four corners of the above-mentioned substrate opening outline are provided with curved portions when viewed from above.

[0149] As a 19th aspect of the present invention, the vapor deposition mask in each of the above-described aspects 1 to 9 can be:

[0150] A first alignment mark is provided on the side of the mask substrate opposite to the mask layer.

[0151] As a 20th aspect of the present invention, the vapor deposition mask in the above-described 19th aspect may be:

[0152] The aforementioned mask substrate has: a substrate body that defines the substrate opening; and an inner protrusion that protrudes inward from the substrate body when viewed from above.

[0153] The first alignment mark is located on the inner protrusion.

[0154] As a 21st aspect of the present invention, in the vapor deposition mask of the 19th aspect or the 20th aspect described above, it may be:

[0155] A second alignment mark is provided at a position closer to the through hole than the first alignment mark mentioned above.

[0156] As a 22nd aspect of the present invention, the vapor deposition mask in the above-described 21st aspect may be:

[0157] The aforementioned mask layer has: two or more through holes; two or more groups of through holes, each consisting of two or more through holes; and mask crossbars disposed between adjacent groups of through holes.

[0158] The second alignment mark mentioned above is located on the mask crossbar mentioned above.

[0159] As a 23rd aspect of the present invention, the vapor deposition mask in the above-described 22nd aspect may be:

[0160] The aforementioned mask crossbars include a first mask crossbar and a second mask crossbar that extend in mutually orthogonal directions when viewed from above.

[0161] The second alignment mark is located at the intersection of the first mask crossbar and the second mask crossbar.

[0162] As a 24th aspect of the present invention, the vapor deposition mask in each of the above-described first to 23rd aspects may be:

[0163] When viewed from above, the outer edge of the main mask layer is located closer to the inside than the outer edge of the middle mask layer.

[0164] As a 25th aspect of the present invention, the vapor deposition mask in each of the above-described aspects 1 to 24 can be:

[0165] The aforementioned mask main body layer contains more than two main islands.

[0166] The groove that runs through the main body of the mask is located between two adjacent main islands.

[0167] As a 26th aspect of the present invention, the vapor deposition mask in each of the above-described aspects 1 to 25 can be:

[0168] The aforementioned mask layer has a mask insulating layer forming the first surface.

[0169] The aforementioned mask main body layer contains more than two main islands.

[0170] The aforementioned mask insulating layer is located between two adjacent main islands.

[0171] As a 27th aspect of the present invention, the vapor deposition mask in each of the above-described aspects 1 to 26 can be:

[0172] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0173] The aforementioned mask layer has a mask insulating layer forming the first surface.

[0174] The aforementioned mask insulating layer is located between two adjacent sets of the aforementioned through holes.

[0175] As the 28th aspect of the present invention, the vapor deposition mask in each of the above-described aspects 1 to 27 can be:

[0176] The aforementioned mask body layer includes a dummy body island, which is located at a position that does not overlap with the aforementioned substrate opening when viewed from above.

[0177] The 29th aspect of the present invention is a framed vapor deposition mask comprising:

[0178] The vapor deposition masks for each of the methods 1 to 28 mentioned above; and

[0179] A frame that supports the aforementioned mask substrate of the vapor deposition mask.

[0180] The 30th aspect of the present invention is a method for manufacturing a vapor deposition mask, comprising:

[0181] The substrate preparation process involves preparing a mask substrate containing silicon.

[0182] In the mask layer forming process, a mask layer is formed on the mask substrate, the mask layer having a first surface and a second surface located on the opposite side of the first surface and facing the mask substrate;

[0183] In the substrate opening forming process, a substrate opening is formed on the aforementioned mask substrate; and

[0184] The through-hole forming process forms a through-hole that penetrates the aforementioned mask layer.

[0185] When viewed from above, the aforementioned through-hole is located within the aforementioned opening in the substrate.

[0186] The mask layer forming process includes: a mask intermediate layer forming process, in which a mask intermediate layer is formed on the surface of the mask substrate facing the mask layer; and a mask main body layer forming process, in which a mask main body layer is formed on the surface of the mask intermediate layer opposite to the mask substrate.

[0187] The aforementioned mask body layer contains metallic material.

[0188] As a 31st aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 30th aspect may be:

[0189] In the above-mentioned through-hole forming process, the through-hole is formed by irradiating the above-mentioned mask layer with a laser.

[0190] As a 32nd aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 31st aspect may be:

[0191] The through-hole forming process is performed after the above-mentioned substrate opening forming process.

[0192] The laser beam irradiates the second surface of the mask layer through the opening in the substrate.

[0193] As a 33rd aspect of the present invention, in the manufacturing method of the vapor deposition mask in the 31st aspect or the 33rd aspect described above, it may be:

[0194] The laser mentioned above is a femtosecond laser.

[0195] As a 34th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the 31st to 32nd aspects described above may be:

[0196] In the above-mentioned through-hole forming process, the laser irradiates the above-mentioned mask layer through the mask hole corresponding to the through-hole of the photomask.

[0197] As a 35th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 34th aspect may be:

[0198] The aforementioned photomask has multiple of the aforementioned mask holes.

[0199] In the above-mentioned through-hole forming process, the laser irradiates the mask layer through the multiple mask holes of the photomask.

[0200] As a 36th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the 30th to 35th aspects described above may be:

[0201] The aforementioned mask substrate has a substrate body that defines the opening of the aforementioned substrate.

[0202] The aforementioned mask intermediate layer includes: a main body region located between the mask main body layer and the substrate main body; and an opening region located within the opening of the substrate when viewed from above.

[0203] In the above-mentioned through-hole forming process, the through-hole is formed in such a way that it penetrates the above-mentioned mask body layer and the above-mentioned opening area.

[0204] As the 37th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 36th aspect may be:

[0205] The opening size of the through hole in the second surface is larger than the opening size of the through hole in the first surface in the specified direction.

[0206] As a 38th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the 30th to 35th aspects described above may be:

[0207] After the above-described substrate opening formation process, a mask layer opening formation process is performed: a mask layer opening is formed in the intermediate layer of the mask along the substrate opening when viewed from above.

[0208] In the above-mentioned through-hole forming process, the through-hole is formed in a manner that penetrates the above-mentioned mask body layer.

[0209] As a 39th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 38th aspect may be:

[0210] The opening size of the through hole in the face of the mask body layer facing the mask substrate in the specified direction is larger than the opening size of the through hole in the specified direction in the first face.

[0211] The 40th aspect of the present invention is a method for manufacturing a vapor deposition mask, comprising:

[0212] The substrate preparation process involves preparing a mask substrate containing silicon.

[0213] In the mask layer forming process, a mask layer is formed on the mask substrate, the mask layer having a first surface and a second surface located on the opposite side of the first surface and facing the mask substrate;

[0214] In the substrate opening forming process, a substrate opening is formed on the aforementioned mask substrate; and

[0215] In the mask layer opening formation process, when viewed from above, an opening in the mask layer is formed along the opening in the substrate.

[0216] The mask layer forming process includes: a mask intermediate layer forming process, in which a mask intermediate layer is formed on the surface of the mask substrate facing the mask layer; and a mask body layer forming process, in which a mask body layer is formed on the surface of the mask intermediate layer opposite to the mask substrate, and a through hole is formed through the mask body layer.

[0217] In the above-mentioned mask layer opening forming process, the mask layer opening is formed in the middle layer of the mask.

[0218] When viewed from above, the aforementioned through-hole is located within the aforementioned opening in the substrate.

[0219] The aforementioned mask body layer contains metallic material.

[0220] As a 41st aspect of the present invention, the method for manufacturing the vapor deposition mask in the 40th aspect described above may include:

[0221] In the above-mentioned mask body layer forming process, a resist layer is formed in a pattern on the side of the intermediate layer of the mask opposite to the mask substrate, in a manner corresponding to the through hole.

[0222] As a 42nd aspect of the present invention, in the manufacturing method of the vapor deposition mask in the 40th aspect or the 41st aspect described above, it may be:

[0223] The opening size of the through hole in the face of the mask body layer facing the mask substrate in the specified direction is larger than the opening size of the through hole in the specified direction in the first face.

[0224] As a 43rd aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the 40th to 42nd aspects described above may be:

[0225] In the above-mentioned mask body layer forming process, a mask insulating layer is formed in a pattern on the side of the intermediate layer of the mask opposite to the mask substrate, corresponding to the through holes.

[0226] The aforementioned mask main body layer contains more than two main islands.

[0227] The aforementioned mask insulating layer is located between two adjacent main islands.

[0228] As a 44th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the 30th to 43rd aspects described above may be:

[0229] The metal material of the mask body layer is a magnetic metal material.

[0230] As a 45th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 44th aspects may be:

[0231] The thickness of the intermediate layer of the mask is less than the thickness of the main body layer of the mask.

[0232] As the 46th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 45th aspects may be:

[0233] The above-mentioned substrate opening forming process includes: a resist layer forming process, in which a resist layer having a resist opening is formed on the side of the mask substrate opposite to the mask layer; and a substrate etching process, in which the mask substrate is etched through the resist opening to form the substrate opening.

[0234] As the 47th aspect of the present invention, the method for manufacturing the vapor deposition mask in the 46th aspect described above may include:

[0235] The aforementioned mask intermediate layer includes a substrate side layer, which contains a material that ensures adhesion to the aforementioned mask substrate and is resistant to the etching medium used in the aforementioned substrate etching process.

[0236] As the 48th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 47th aspect may be:

[0237] The aforementioned mask intermediate layer includes a main side layer facing the aforementioned mask main layer, and the aforementioned main side layer includes a material that can ensure a tight fit with the aforementioned mask main layer.

[0238] As the 49th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 48th aspect may be:

[0239] In the above-mentioned mask layer formation process, the main mask layer is formed by plating.

[0240] The aforementioned mask intermediate layer includes an intermediate layer located between the aforementioned substrate side layer and the aforementioned main body side layer, and includes a material capable of protecting the aforementioned substrate side layer from the plating solution used to form the aforementioned mask main body layer.

[0241] As the 50th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 47th aspect may be:

[0242] The aforementioned substrate side layer is in contact with the aforementioned mask body layer and with the aforementioned mask substrate.

[0243] As the 51st aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 50th aspects may be:

[0244] In the above-mentioned mask layer formation process, the above-mentioned mask intermediate layer is formed by sputtering.

[0245] As the 52nd aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 50th aspects may be:

[0246] In the above-mentioned mask layer forming process, the above-mentioned mask intermediate layer is formed by vapor deposition.

[0247] As the 53rd aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 52nd aspects may be:

[0248] The aforementioned mask layer has two or more of the aforementioned through holes.

[0249] When viewed from above, two or more of the aforementioned through holes are located within the aforementioned substrate opening.

[0250] As the 54th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 53rd aspect may be:

[0251] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0252] When viewed from above, two or more of the aforementioned through-hole groups are located within the aforementioned substrate opening.

[0253] As the 55th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 53rd aspect may be:

[0254] The aforementioned mask substrate has two or more of the aforementioned substrate openings.

[0255] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0256] When viewed from above, two or more of the aforementioned through-hole groups are located within each of the aforementioned substrate openings.

[0257] As the 56th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 53rd aspect may be:

[0258] The aforementioned mask substrate has two or more of the aforementioned substrate openings.

[0259] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0260] When viewed from above, one of the aforementioned through-hole groups is located within each of the aforementioned substrate openings.

[0261] As the 57th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 56th aspects may be:

[0262] The aforementioned substrate opening appears rectangular when viewed from above.

[0263] The four corners of the above-mentioned substrate opening outline are provided with curved portions when viewed from above.

[0264] As the 58th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 57th aspects may be:

[0265] It includes a process of forming a first alignment mark on the surface of the mask substrate opposite to the mask layer.

[0266] As the 59th aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 58th aspect may be:

[0267] The aforementioned mask substrate has: a substrate body that defines the substrate opening; and an inner protrusion that protrudes inward from the substrate body when viewed from above.

[0268] The first alignment mark is located on the inner protrusion.

[0269] As a 60th aspect of the present invention, in the method for manufacturing the vapor deposition mask in the above-described 58th aspect or the above-described 59th aspect, it may be:

[0270] It includes a process of forming a second alignment mark at a position closer to the through hole than the first alignment mark.

[0271] As a 61st aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 60th aspect may include:

[0272] The aforementioned mask layer has: two or more through holes; two or more groups of through holes, each consisting of two or more through holes; and mask crossbars disposed between adjacent groups of through holes.

[0273] The second alignment mark mentioned above is located on the mask crossbar mentioned above.

[0274] As a 62nd aspect of the present invention, the method for manufacturing the vapor deposition mask in the above-described 61st aspect may include:

[0275] The aforementioned mask crossbars include a first mask crossbar and a second mask crossbar that extend in mutually orthogonal directions when viewed from above.

[0276] The second alignment mark is located at the intersection of the first mask crossbar and the second mask crossbar.

[0277] As the 63rd aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 62nd aspects may be:

[0278] When viewed from above, the outer edge of the main mask layer is located closer to the inside than the outer edge of the middle mask layer.

[0279] As the 64th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 63rd aspects may be:

[0280] The aforementioned mask main body layer contains more than two main islands.

[0281] The groove that runs through the main body of the mask is located between two adjacent main islands.

[0282] As a 65th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 64th aspects may be:

[0283] The aforementioned mask layer has two or more through-hole groups consisting of two or more of the aforementioned through-holes.

[0284] The aforementioned mask layer has a mask insulating layer forming the first surface.

[0285] The aforementioned mask insulating layer is located between two adjacent sets of the aforementioned through holes.

[0286] As the 66th aspect of the present invention, the manufacturing method of the vapor deposition mask in each of the above-described 30th to 65th aspects may be:

[0287] The aforementioned mask body layer includes a dummy body island, which is located at a position that does not overlap with the aforementioned substrate opening when viewed from above.

[0288] The aforementioned methods 30 to 66 can also be vapor deposition masks manufactured by the respective vapor deposition mask manufacturing methods of methods 30 to 66.

[0289] The 67th aspect of the present invention is a method for manufacturing an organic device, comprising:

[0290] The vapor deposition mask preparation process involves preparing the vapor deposition mask using the manufacturing methods for vapor deposition masks described in each of the above-described methods 30 to 66.

[0291] The sealing process ensures that the first surface of the mask layer of the vapor deposition mask is sealed to the vapor deposition substrate; and

[0292] In the vapor deposition process, vapor deposition material is deposited onto the vapor deposition substrate through the through-hole of the vapor deposition mask to form a vapor deposition layer.

[0293] The aforementioned method 67 can also be an organic device manufactured using the manufacturing method of the organic device described in method 67.

[0294] The 68th aspect of the present invention is a method for manufacturing a framed vapor deposition mask, comprising:

[0295] The vapor deposition mask preparation process involves preparing the vapor deposition mask using the manufacturing methods described in methods 30 through 66 above; and

[0296] The frame mounting process involves mounting a frame onto the mask substrate of the aforementioned vapor-deposited mask.

[0297] The aforementioned method 68 can also be a framed vapor deposition mask manufactured by the manufacturing method of the framed vapor deposition mask of method 68.

[0298] Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings. The embodiments shown below are examples of embodiments of the present invention, and the present invention is not limited to these embodiments.

[0299] First, the vapor deposition apparatus 80 for performing the vapor deposition process of depositing vapor deposition material onto an object will be described with reference to FIG1. ​​As shown in FIG1, the vapor deposition apparatus 80 may include a vapor deposition source (e.g., a crucible 81), a heater 83, and a vapor deposition mask 10. Additionally, the vapor deposition apparatus 80 may further include an exhaust unit (not shown). The exhaust unit is capable of reducing the internal pressure of the vapor deposition apparatus 80 to a vacuum atmosphere. The crucible 81 is disposed inside the vapor deposition apparatus 80 and is configured to contain a vapor deposition material 82, such as an organic light-emitting material. The heater 83 is configured to heat the crucible 81. By heating the crucible 81 under a vacuum atmosphere, the vapor deposition material 82 evaporates.

[0300] A vapor deposition mask 10 is disposed within the vapor deposition apparatus 80 facing the crucible 81. The vapor deposition mask 10 may also be disposed above the crucible 81. A vapor deposition substrate 110 is disposed facing the vapor deposition mask 10. The vapor deposition substrate 110 is the object to which the vapor deposition material 82 is attached. The vapor deposition substrate 110 may also be disposed above the vapor deposition mask 10. Vapor deposition material arriving from the crucible 81 adheres to the vapor deposition substrate 110 through the through-hole 40 of the vapor deposition mask 10 (described later).

[0301] As shown in Figure 1, the vapor deposition apparatus 80 may include a magnet 85 disposed on the side of the vapor deposition substrate 110 opposite to the vapor deposition mask 10. The magnetic force of the magnet 85 attracts the vapor deposition mask 10 toward the magnet 85, enabling the vapor deposition mask 10 to adhere tightly to the vapor deposition substrate 110. This suppresses shadowing during the vapor deposition process (described later). Therefore, the shape and positional accuracy of the vapor deposition layer (or the organic layers 130A, 130B, 130C of the organic device 100 described later, see Figures 15A and 15B) formed by the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved. A cooling plate (not shown) may also be sandwiched between the vapor deposition substrate 110 and the magnet 85 to cool the vapor deposition substrate 110 during vapor deposition.

[0302] Next, the vapor deposition mask 10 of this embodiment will be described in more detail with reference to Figures 1 to 5B.

[0303] As shown in Figures 1 to 3, the vapor deposition mask 10 may include a mask layer 20 having a through hole 40 (described later) and a mask substrate 15 supporting the mask layer 20. The mask substrate 15 may also be located on the second surface 20b of the mask layer 20 (described later).

[0304] As shown in Figure 2, when viewed in a direction perpendicular to the first surface 20a described later (hereinafter referred to as top view), the vapor deposition mask 10 of this embodiment can have the same planar shape as a silicon wafer used in semiconductor manufacturing. In this case, both the mask layer 20 and the mask substrate 15 can have the same shape as the silicon wafer. The silicon wafer can also have a planar shape, similar to a general wafer shape, where a portion of a circle called the orientation flat is cut into a straight line (see Figure 2). Alternatively, the silicon wafer can have a planar shape where a portion of a circle called a notch is cut into a concave shape.

[0305] As shown in FIG3, the mask substrate 15 may also have a first substrate surface 15a facing the mask layer 20 and a second substrate surface 15b located on the opposite side of the first substrate surface 15a. The mask layer 20 (more specifically, the substrate side layer 26 described later) may be attached to the first substrate surface 15a or fixed to the first substrate surface 15a. The mask layer 20 and the mask substrate 15 may also be attached to each other in a non-separable manner by forming a layer of the mask layer 20 (e.g., the second metal layer 22 described later) using sputtering, vapor deposition, or the like. FIG3 is a schematic cross-section of line AA in FIG2. For ease of understanding of the figure, the number of through-hole groups 30 and through-holes 40 has been reduced.

[0306] As shown in Figures 2 and 3, the mask substrate 15 may also have a substrate opening 16 that exposes the through-holes 40 of the mask layer 20. The substrate opening 16 extends from the first substrate surface 15a to the second substrate surface 15b and penetrates the mask substrate 15. In plan view, the through-holes 40 may be located within the substrate opening 16 or may be located within a plurality of through-holes 40. In one embodiment, the mask substrate 15 may also have a frame shape in plan view. As shown in Figure 2, the mask substrate 15 may also have a substrate frame 17 located outside the through-hole group 30, having a planar shape along the outer edge 15c of the mask substrate 15. This substrate frame 17 is an example of a substrate body. The substrate opening 16 may also be defined on the inner side of the substrate frame 17. As shown in Figure 2, the substrate opening 16 may have an outline similar in shape to the outer edge 15c of the mask substrate 15 in plan view, or it may have a circular outline.

[0307] The diameter of the mask substrate 15 is not particularly limited, and can be, for example, 150mm (6 inches), 200mm (8 inches), 300mm (12 inches), or 450mm (18 inches).

[0308] The thickness H1 of the mask substrate 15 is not particularly limited. It can be 0.625 mm when the diameter is 150 mm, and 0.725 mm when the diameter is 200 mm. In addition, when the diameter is 300 mm, the thickness H1 can be 0.775 mm.

[0309] The mask substrate 15 may contain silicon. For example, when a glass substrate is used as the evaporation substrate 110, the coefficient of thermal expansion of the mask substrate 15 can be adjusted to be equal to or close to that of the glass substrate. During the evaporation process, the shape accuracy and positional accuracy of the organic layers 130A, 130B, and 130C formed on the evaporation substrate 110 may sometimes be reduced due to the difference in the coefficients of thermal expansion between the evaporation mask 10 with the mask layer 20 and the evaporation substrate 110. Hereinafter, this reduction will sometimes be referred to as accuracy reduction. By adjusting the coefficient of thermal expansion of the mask substrate 15 to be equal to or close to that of the glass substrate, accuracy reduction can be suppressed. In addition, when a silicon substrate is used as the evaporation substrate 110, the mask substrate 15 can be made of the same material as or the same material as the evaporation substrate 110. In this case, the difference in the coefficient of thermal expansion between the mask substrate 15 and the evaporation substrate 110 can be reduced. Furthermore, the coefficient of thermal expansion of the mask substrate 15 can be made equal to that of the evaporation substrate 110. This allows for further suppression of accuracy reduction.

[0310] As shown in Figure 3, the mask layer 20 may have a first surface 20a and a second surface 20b located on the opposite side of the first surface 20a and facing the mask substrate 15. The first surface 20a may also be the surface that is tightly bonded to the vapor deposition substrate 110 during vapor deposition. The second surface 20b may be attached to the mask substrate 15.

[0311] The thickness H2 of the mask layer 20 can be, for example, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more. By making the thickness H2 2 μm or more, the mechanical strength of the mask layer 20 can be ensured, and deformation or breakage during operation can be suppressed. Alternatively, the thickness H2 can be, for example, 6 μm or less, 7 μm or less, 8 μm or less, or 9 μm or less. By making the thickness H2 9 μm or less, the generation of shadows can be suppressed. The range of thickness H2 can also be determined by a first group consisting of 2 μm, 3 μm, 4 μm, and 5 μm and / or a second group consisting of 6 μm, 7 μm, 8 μm, and 9 μm. The range of thickness H2 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H2 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness H2 can also be determined by a combination of any two of the values ​​included in the second group. For example, it can be 2μm or higher than 9μm, 2μm or higher than 8μm, 2μm or higher than 7μm, 2μm or higher than 6μm, 2μm or higher than 5μm, 2μm or higher than 4μm, 2μm or higher than 3μm, 3μm or higher than 9μm, 3μm or higher than 8μm, 3μm or higher than 7μm, 3μm or higher than 6μm, 3μm or higher than 5μm, 3μm or higher than 4μm, and 4μm or higher than 9μm. It can be 4μm or higher than 8μm, or 4μm or higher than 7μm, or 4μm or higher than 6μm, or 4μm or higher than 5μm, or 5μm or higher than 9μm, or 5μm or higher than 8μm, or 5μm or higher than 7μm, or 5μm or higher than 6μm, or 6μm or higher than 9μm, or 6μm or higher than 8μm, or 6μm or higher than 7μm, or 7μm or higher than 9μm, or 7μm or higher than 8μm, or 8μm or higher than 9μm.

[0312] In one embodiment, the mask layer 20 may have a first metal layer 21 located on the side of the first surface 20a and a second metal layer 22 located closer to the side of the second surface 20b than the first metal layer 21. The first metal layer 21 may also be a layer forming the first surface 20a. The first metal layer 21 is an example of a mask body layer and may also be referred to as a metal body layer. The first metal layer 21 may be attached to and deposited on the second metal layer 22. The second metal layer 22 is an example of a mask intermediate layer and may also be referred to as a metal intermediate layer. The second metal layer 22 is located between the first metal layer 21 and the mask substrate 15. The thickness H4 of the second metal layer 22 may be less than the thickness H3 of the first metal layer 21. The first metal layer 21 may be formed by a plating process as described later. The second metal layer 22 may be formed by a sputtering process as described later.

[0313] The second metal layer 22 may include: a main body region 22a located between the first metal layer 21 and the substrate frame 17; and an opening region 22b located within the substrate opening 16 when viewed from above. In the example shown in FIG3, the second metal layer 22 is formed on the entire surface of the first metal layer 21 facing the mask substrate 15. Both the main body region 22a and the opening region 22b may be composed of the main body side layer 25, the substrate side layer 26, and the intermediate layer 27, which will be described later.

[0314] As shown in Figure 3, in a top view, at least a portion of the outer edge 21c of the first metal layer 21 can be located at a position overlapping with the outer edge 22c of the second metal layer 22. The outer edge 21c of the first metal layer 21 can also be located entirely at a position overlapping with the outer edge 22c of the second metal layer 22. The outer edges of the main body side layer 25, the substrate side layer 26, and the intermediate layer 27 (described later) can overlap in a top view to form the outer edge 22c of the second metal layer 22. In a top view, at least a portion of the outer edge 21c of the first metal layer 21 and at least a portion of the outer edge 22c of the second metal layer 22 can be located at a position overlapping with the outer edge 15c of the aforementioned mask substrate 15. The outer edges 21c of the first metal layer 21 and 22c of the second metal layer 22 can also be located entirely at a position overlapping with the outer edge 15c of the mask substrate 15.

[0315] The second metal layer 22 may include a main side layer 25 located on the side of the first metal layer 21 and a substrate side layer 26 located closer to the mask substrate 15 than the main side layer 25. The main side layer 25 may be located closer to the first metal layer 21 than the substrate side layer 26. The main side layer 25 may face the first metal layer 21. The substrate side layer 26 may face the mask substrate 15. The surface of the substrate side layer 26 facing the mask substrate 15 may form the aforementioned second surface 20b. An intermediate layer 27 may be located between the main side layer 25 and the substrate side layer 26. The second metal layer 22 may have a three-layer structure.

[0316] The materials constituting the main side layer 25, the substrate side layer 26, and the intermediate layer 27 can be different. The main side layer 25, the substrate side layer 26, and the intermediate layer 27 can be made of different metallic materials. The main side layer 25, the substrate side layer 26, and the intermediate layer 27 can be configured as layers with specific purposes. The main side layer 25, for example, can be a layer that ensures adhesion to the first metal layer 21. The substrate side layer 26, for example, can be a layer that ensures adhesion to the mask substrate 15. Furthermore, the substrate side layer 26 can be a layer resistant to the etching medium used in the substrate etching process described later. More specifically, the substrate side layer 26 can be a layer that inhibits the erosion of the etching medium. The intermediate layer 27, for example, can be a layer that protects the substrate side layer 26 from the plating solution used in the first metal layer formation process. More specifically, the main side layer 25 is formed of copper as described later, and when the thickness H5 (described later) of the main side layer 25 is thin, the main side layer 25 may be formed in a porous manner. In this case, the plating solution can reach the intermediate layer 27 through the main body side layer 25, so the intermediate layer 27 can be resistant to the plating solution. For example, if the main body side layer 25 is formed of copper and the substrate side layer 26 is formed of a neodymium-containing aluminum alloy, the intermediate layer 27 can be a layer that can ensure the adhesion between the main body side layer 25 and the substrate side layer 26.

[0317] The thickness H3 of the first metal layer 21 can be, for example, 0.5 μm or more, 1.0 μm or more, 1.5 μm or more, or 2.0 μm or more. By making the thickness H3 0.5 μm or more, mechanical strength can be ensured, deformation or breakage during operation can be suppressed, and defects such as pinholes can be suppressed. Alternatively, the thickness H3 can be, for example, 10.0 μm or less, 15.0 μm or less, 20.0 μm or less, or 25.0 μm or less. By making the thickness H3 25.0 μm or less, the generation of shadows can be suppressed. The range of thickness H3 can also be determined by a first group consisting of 0.5 μm, 1.0 μm, 1.5 μm, and 2.0 μm and / or a second group consisting of 10.0 μm, 15.0 μm, 20.0 μm, and 25.0 μm. The range of thickness H3 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H3 can also be determined by any two of the values ​​included in group 1 above. The range of thickness H3 can also be determined by any two of the values ​​included in group 2 above. For example, it can be 0.5μm or higher than 25.0μm, 0.5μm or higher than 20.0μm, 0.5μm or higher than 15.0μm, 0.5μm or higher than 10.0μm, 0.5μm or higher than 2.0μm, 0.5μm or higher than 1.5μm, 0.5μm or higher than 1.0μm, 1.0μm or higher than 25.0μm, 1.0μm or higher than 20.0μm, 1.0μm or higher than 15.0μm, 1.0μm or higher than 10.0μm, 1.0μm or higher than 2.0μm, 1.0μm or higher than 1.5μm, 1.5μm or higher than 25.0μm, or 1. 0.5μm to 20.0μm, can be 1.5μm to 15.0μm, can be 1.5μm to 10.0μm, can be 1.5μm to 2.0μm, can be 2.0μm to 25.0μm, can be 2.0μm to 20.0μm, can be 2.0μm to 15.0μm, can be 2.0μm to 10.0μm, can be 10.0μm to 25.0μm, can be 10.0μm to 20.0μm, can be 10.0μm to 15.0μm, can be 15.0μm to 25.0μm, can be 15.0μm to 20.0μm, or can be 20.0μm to 25.0μm.

[0318] Alternatively, the thickness H3 of the first metal layer 21 can be, for example, 3.2 μm or more, 3.4 μm or more, 3.6 μm or more, or 3.8 μm or more. By making the thickness H3 3.2 μm or more, the first metal layer 21, which ensures mechanical strength and suppresses deformation or breakage during operation, can be stably formed by the plating process described later. Furthermore, the thickness H3 can be, for example, 4.2 μm or less, 4.4 μm or less, 4.6 μm or less, or 4.8 μm or less. By making the thickness H3 4.8 μm or less, the first metal layer 21 can be formed efficiently. The range of thickness H3 can also be determined by a first group consisting of 3.2 μm, 3.4 μm, 3.6 μm, and 3.8 μm and / or a second group consisting of 4.2 μm, 4.4 μm, 4.6 μm, and 4.8 μm. The range of thickness H3 can also be determined by a combination of any one of the values ​​included in group 1 above and any one of the values ​​included in group 2 above. The range of thickness H3 can also be determined by a combination of any two of the values ​​included in group 1 above. The range of thickness H3 can also be determined by a combination of any two of the values ​​included in group 2 above. For example, it can be 3.2μm or higher than 4.8μm, 3.2μm or higher than 4.6μm, 3.2μm or higher than 4.4μm, 3.2μm or higher than 4.2μm, 3.2μm or higher than 3.8μm, 3.2μm or higher than 3.6μm, 3.2μm or higher than 3.4μm, 3.4μm or higher than 4.8μm, 3.4μm or higher than 4.6μm, 3.4μm or higher than 4.4μm, 3.4μm or higher than 4.2μm, 3.4μm or higher than 3.8μm, 3.4μm or higher than 3.6μm, and 3.6μm or higher than 4.8μm. It can be 3.6μm or higher than 4.6μm, or 3.6μm or higher than 4.4μm, or 3.6μm or higher than 4.2μm, or 3.6μm or higher than 3.8μm, or 3.8μm or higher than 4.8μm, or 3.8μm or higher than 4.6μm, or 3.8μm or higher than 4.4μm, or 3.8μm or higher than 4.2μm, or 4.2μm or higher than 4.8μm, or 4.2μm or higher than 4.6μm, or 4.2μm or higher than 4.4μm, or 4.4μm or higher than 4.8μm, or 4.4μm or higher than 4.6μm.

[0319] The thickness H4 of the second metal layer 22 can be, for example, 100 nm or more, 200 nm or more, 300 nm or more, or 400 nm or more. By making the thickness H4 100 nm or more, the second metal layer 22 can be stably formed by the sputtering process described later. Alternatively, the thickness H4 can be, for example, 800 nm or less, 1000 nm or less, 1200 nm or less, or 1500 nm or less. By making the thickness H4 1500 nm or less, the second metal layer 22 can be formed efficiently. The range of thickness H4 can also be determined by a first group consisting of 100 nm, 200 nm, 300 nm, and 400 nm and / or a second group consisting of 800 nm, 1000 nm, 1200 nm, and 1500 nm. The range of thickness H4 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H4 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness H4 can also be determined by any combination of any two values ​​included in the second group above. For example, it can be 100nm to 1500nm, 100nm to 1200nm, 100nm to 1000nm, 100nm to 800nm, 100nm to 400nm, 100nm to 300nm, 100nm to 200nm, 200nm to 1500nm, 200nm to 1200nm, 200nm to 1000nm, 200nm to 800nm, 200nm to 400nm, 200nm to 300nm, 200nm to 300nm, 300nm to 1500nm, etc. It can be 300nm or higher than 1200nm, or 300nm or higher than 1000nm, or 300nm or higher than 800nm, or 300nm or higher than 400nm, or 400nm or higher than 1500nm, or 400nm or higher than 1200nm, or 400nm or higher than 1000nm, or 400nm or higher than 800nm, or 800nm ​​or higher than 1500nm, or 800nm ​​or higher than 1200nm, or 800nm ​​or higher than 1000nm, or 1000nm or higher than 1500nm, or 1000nm or higher than 1200nm, or 1200nm or higher than 1500nm.

[0320] Alternatively, the thickness H4 of the second metal layer 22 can be, for example, 100 nm or more, 200 nm or more, 300 nm or more, or 400 nm or more. By making the thickness H4 100 nm or more, the second metal layer 22 can be stably formed by the sputtering process described later. Furthermore, the thickness H4 can be, for example, 500 nm or less, 600 nm or less, 700 nm or less, or 800 nm or less. By making the thickness H4 800 nm or less, the second metal layer 22 can be formed more efficiently. The range of thickness H4 can also be determined by a first group consisting of 100 nm, 200 nm, 300 nm, and 400 nm and / or a second group consisting of 500 nm, 600 nm, 700 nm, and 800 nm. The range of thickness H4 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H4 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness H4 can also be determined by any combination of any two values ​​included in the second group above. For example, it can be 100nm to 800nm, 100nm to 700nm, 100nm to 600nm, 100nm to 500nm, 100nm to 400nm, 100nm to 300nm, 100nm to 200nm, 200nm to 800nm, 200nm to 700nm, 200nm to 600nm, 200nm to 500nm, 200nm to 400nm, 200nm to 400nm, 200nm to 300nm, and 300nm to 800nm. It can be 300nm or higher than 700nm, 300nm or higher than 600nm, 300nm or higher than 500nm, 300nm or higher than 400nm, 400nm or higher than 800nm, 400nm or higher than 700nm, 400nm or higher than 600nm, 400nm or higher than 500nm, 500nm or higher than 800nm, 500nm or higher than 700nm, 500nm or higher than 600nm, 600nm or higher than 800nm, 600nm or higher than 700nm, or 700nm or higher than 800nm.

[0321] The thickness H5 of the main body side layer 25 can be, for example, 180 nm or more, 185 nm or more, 190 nm or more, or 195 nm or more. By making the thickness H5 180 nm or more, the main body side layer 25 can be stably formed by the sputtering process described later. Alternatively, the thickness H5 can be, for example, 800 nm or less, 1000 nm or less, 1200 nm or less, or 1500 nm or less. By making the thickness H5 1500 nm or less, the main body side layer 25 can be efficiently formed by the sputtering process described later. The range of thickness H5 can also be determined by a first group consisting of 180 nm, 185 nm, 190 nm, and 195 nm and / or a second group consisting of 800 nm, 1000 nm, 1200 nm, and 1500 nm. The range of thickness H5 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H5 can also be determined by any two of the values ​​included in the first group above. The range of thickness H5 can also be determined by any two of the values ​​included in the second group above. For example, it can be 180nm to 1500nm, 180nm to 1200nm, 180nm to 1000nm, 180nm to 800nm, 180nm to 195nm, 180nm to 190nm, 180nm to 185nm, 185nm to 1500nm, 185nm to 1200nm, 185nm to 1000nm, 185nm to 800nm, 185nm to 195nm, 185nm to 190nm, 190nm to 1500nm, etc. It can be 190nm to 1200nm, or 190nm to 1000nm, or 190nm to 800nm, or 190nm to 195nm, or 195nm to 1500nm, or 195nm to 1200nm, or 195nm to 1000nm, or 195nm to 800nm, or 800nm ​​to 1500nm, or 800nm ​​to 1200nm, or 800nm ​​to 1000nm, or 1000nm to 1500nm, or 1000nm to 1200nm, or 1200nm to 1500nm.

[0322] Alternatively, the thickness H5 of the main body side layer 25 can be, for example, 180 nm or more, 185 nm or more, 190 nm or more, or 195 nm or more. By making the thickness H5 180 nm or more, the main body side layer 25 can be stably formed by the sputtering process described later. Furthermore, the thickness H5 can be, for example, 205 nm or less, 210 nm or less, 215 nm or less, or 220 nm or less. By making the thickness H5 220 nm or less, the main body side layer 25 can be formed more efficiently by the sputtering process described later. The range of thickness H5 can also be determined by a first group consisting of 180 nm, 185 nm, 190 nm, and 195 nm and / or a second group consisting of 205 nm, 210 nm, 215 nm, and 220 nm. The range of thickness H5 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H5 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness H5 can also be determined by any two of the values ​​included in the second group above. For example, it can be 180nm to 220nm, 180nm to 215nm, 180nm to 210nm, 180nm to 205nm, 180nm to 195nm, 180nm to 190nm, 180nm to 185nm, 185nm to 220nm, 185nm to 215nm, 185nm to 210nm, 185nm to 205nm, 185nm to 195nm, 185nm to 190nm, or 190nm to 220nm. It can be 190nm or higher than 215nm, it can be 190nm or higher than 210nm, it can be 190nm or higher than 205nm, it can be 190nm or higher than 195nm, it can be 195nm or higher than 220nm, it can be 195nm or higher than 215nm, it can be 195nm or higher than 210nm, it can be 195nm or higher than 205nm, it can be 205nm or higher than 220nm, it can be 205nm or higher than 215nm, it can be 205nm or higher than 210nm, it can be 210nm or higher than 220nm, it can be 210nm or higher than 215nm, or it can be 215nm or higher than 220nm.

[0323] The thickness H6 of the substrate side layer 26 can be, for example, 90 nm or more, 92 nm or more, 94 nm or more, or 96 nm or more. By making the thickness H6 90 nm or more, the substrate side layer 26 can be stably formed by the sputtering process described later. Alternatively, the thickness H6 can be, for example, 104 nm or less, 106 nm or less, 108 nm or less, or 110 nm or less. By making the thickness H6 110 nm or less, the substrate side layer 26 can be formed efficiently. The range of thickness H6 can also be determined by a first group consisting of 90 nm, 92 nm, 94 nm, and 96 nm and / or a second group consisting of 104 nm, 106 nm, 108 nm, and 110 nm. The range of thickness H6 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H6 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness H6 can also be determined by a combination of any two of the values ​​included in the second group. For example, it can be 90nm or higher than 110nm, 90nm or higher than 108nm, 90nm or higher than 106nm, 90nm or higher than 104nm, 90nm or higher than 96nm, 90nm or higher than 94nm, 90nm or higher than 92nm, 92nm or higher than 110nm, 92nm or higher than 108nm, 92nm or higher than 106nm, 92nm or higher than 104nm, 92nm or higher than 96nm, 92nm or higher than 94nm, 94nm or higher than 110nm, and 94nm or higher. It can be 4nm or above and below 108nm, or 94nm or above and below 106nm, or 94nm or above and below 104nm, or 94nm or above and below 96nm, or 96nm or above and below 110nm, or 96nm or above and below 108nm, or 96nm or above and below 106nm, or 96nm or above and below 104nm, or 104nm or above and below 110nm, or 104nm or above and below 108nm, or 104nm or above and below 106nm, or 106nm or above and below 110nm, or 106nm or above and below 108nm, or 108nm or above and below 110nm.

[0324] The thickness H7 of the intermediate layer 27 can be, for example, 45 nm or more, 50 nm or more, 55 nm or more, or 65 nm or more. By making the thickness H7 45 nm or more, the intermediate layer 27 can be stably formed by the sputtering process described later. Alternatively, the thickness H7 can be, for example, 80 nm or less, 90 nm or less, 100 nm or less, or 110 nm or less. By making the thickness H7 110 nm or less, the intermediate layer 27 can be formed efficiently. The range of thickness H7 can also be determined by a first group consisting of 45 nm, 50 nm, 55 nm, and 65 nm and / or a second group consisting of 80 nm, 90 nm, 100 nm, and 110 nm. The range of thickness H7 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H7 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness H7 can also be determined by a combination of any two of the values ​​included in the second group. For example, it can be 45nm or higher but less than 110nm, 45nm or higher but less than 100nm, 45nm or higher but less than 90nm, 45nm or higher but less than 80nm, 45nm or higher but less than 65nm, 45nm or higher but less than 55nm, 45nm or higher but less than 50nm, 50nm or higher but less than 110nm, 50nm or higher but less than 100nm, 50nm or higher but less than 90nm, 50nm or higher but less than 80nm, 50nm or higher but less than 65nm, 50nm or higher but less than 55nm, 55nm or higher but less than 110nm, etc. It can be 55nm or higher than 100nm, or 55nm or higher than 90nm, or 55nm or higher than 80nm, or 55nm or higher than 65nm, or 65nm or higher than 110nm, or 65nm or higher than 100nm, or 65nm or higher than 90nm, or 65nm or higher than 80nm, or 80nm or higher than 110nm, or 80nm or higher than 100nm, or 80nm or higher than 90nm, or 90nm or higher than 110nm, or 90nm or higher than 100nm, or 100nm or higher than 110nm.

[0325] Alternatively, the thickness H7 of the intermediate layer 27 can be, for example, 45 nm or more, 46 nm or more, 47 nm or more, or 48 nm or more. By making the thickness H7 45 nm or more, the intermediate layer 27 can be stably formed by the sputtering process described later. Furthermore, the thickness H7 can be, for example, 52 nm or less, 53 nm or less, 54 nm or less, or 55 nm or less. By making the thickness H7 55 nm or less, the intermediate layer 27 can be formed efficiently. The range of thickness H7 can also be determined by a first group consisting of 45 nm, 46 nm, 47 nm, and 48 nm and / or a second group consisting of 52 nm, 53 nm, 54 nm, and 55 nm. The range of thickness H7 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness H7 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness H7 can also be determined by a combination of any two of the values ​​included in the second group. For example, it can be 45nm or higher but below 55nm, 45nm or higher but below 54nm, 45nm or higher but below 53nm, 45nm or higher but below 52nm, 45nm or higher but below 48nm, 45nm or higher but below 47nm, 45nm or higher but below 46nm, 46nm or higher but below 55nm, 46nm or higher but below 54nm, 46nm or higher but below 53nm, 46nm or higher but below 52nm, 46nm or higher but below 48nm, 46nm or higher but below 47nm, and 47nm or higher but below 55nm. It can be 47nm or higher than 54nm, or 47nm or higher than 53nm, or 47nm or higher than 52nm, or 47nm or higher than 48nm, or 48nm or higher than 55nm, or 48nm or higher than 54nm, or 48nm or higher than 53nm, or 48nm or higher than 52nm, or 52nm or higher than 55nm, or 52nm or higher than 54nm, or 52nm or higher than 53nm, or 53nm or higher than 55nm, or 53nm or higher than 54nm, or 54nm or higher than 55nm.

[0326] The first metal layer 21 may contain a metallic material. The metallic material may also be a magnetic metallic material. For example, a nickel-containing iron alloy can be used as a material constituting the first metal layer 21. The iron alloy may also contain cobalt in addition to nickel. For example, an iron alloy with a total nickel and cobalt content of 30% to 54% by mass and a cobalt content of 0% to 6% by mass can be used as the material for the first metal layer 21. The nickel-containing iron alloy may include an Invar alloy containing 34% to 38% by mass of nickel, or a low-thermal-expansion Fe-Ni plating alloy containing 38% to 54% by mass of nickel. The nickel- and cobalt-containing iron alloy may include a super-Invar alloy containing cobalt in addition to 30% to 34% by mass of nickel. By using such an iron alloy, the coefficient of thermal expansion of the first metal layer 21 can be reduced. For example, when using a glass substrate as the vapor deposition substrate 110, the coefficient of thermal expansion of the mask layer 20 can be adjusted to a value equal to or close to that of the glass substrate. Therefore, it is possible to suppress the reduction in accuracy.

[0327] Instead of the aforementioned nickel-containing iron alloy, nickel, or a cobalt-containing nickel alloy, can be used as the material constituting the first metal layer 21. When using a cobalt-containing nickel alloy, a nickel alloy with a cobalt content of 8% to 10% by mass can also be used as the material for the first metal layer 21. Using such nickel or nickel alloys can suppress component decomposition of the plating solution used in the subsequent first metal layer formation process, thereby improving the stability of the plating solution.

[0328] The material constituting the main side layer 25 is not particularly limited, as long as it ensures adhesion to the first metal layer 21. The material constituting the main side layer 25 can also function as a seed layer when the first metal layer 21 is formed by electroplating or electroless plating. In the case of electroplating, the material constituting the main side layer 25 can be a material with low electrical resistance or a material resistant to plating solutions. For example, the main side layer 25 during electroplating can contain titanium (Ti), copper (Cu), nickel (Ni), or gold (Au). In the case of electroless plating, the material constituting the main side layer 25 can be a material with catalyst adsorption capacity or a material resistant to plating solutions. For example, the main side layer 25 during electroless plating can contain silicon oxide (SiO), silicon dioxide (SiO2), siloxane (SiOR2), zinc (Zn), titanium (Ti), copper (Cu), or nickel (Ni).

[0329] The material constituting the substrate side layer 26 is not particularly limited, as long as it ensures good adhesion to the mask substrate 15 and suppresses erosion caused by the etching medium used in the substrate etching process described later. For example, the substrate side layer 26 may contain gold (Au), aluminum (Al), chromium (Cr), nickel (Ni), titanium (Ti), titanium nitride (TiN), neodymium-containing aluminum alloy (Al-Nd), silicon oxide (SiO), or silicon dioxide (SiO2). When the substrate side layer 26 is made of a neodymium-containing aluminum alloy, an aluminum alloy with a neodymium content of 0.5 atomic% or more and 2 atomic% or less can be used. Here, atomic% is obtained by compositional analysis of the substrate side layer 26 using the XPS method. The XPS method is a method that obtains insights related to the types and amounts of constitutive elements in a region within a few nm from the sample surface by measuring the energy distribution of photoelectrons emitted from the sample after irradiating it with X-rays. In this case, the amount of each constituent element present in the spectrum measured by X-ray photoelectron spectroscopy is proportional to the peak area value calculated by integrating the area of ​​the peak corresponding to each constituent element. Therefore, the peak area value corresponding to each constituent element is first calculated. Next, the total peak area values ​​of each constituent element are calculated, and then the peak area value of the constituent element in question is divided by the total value and multiplied by 100, thereby allowing the atomic percentage of the constituent element in question to be calculated. The relationship between the amount of a constituent element present and the peak area value sometimes varies for each constituent element depending on factors such as the sensitivity to X-rays. In this case, a corrected peak area value can also be calculated by multiplying the relative sensitivity coefficient used to correct for sensitivity differences by the peak area value of each constituent element, and then the aforementioned total value and atomic percentage can be calculated.

[0330] The material constituting the intermediate layer 27 is not particularly limited, as long as it ensures adhesion to both the main body side layer 25 and the substrate side layer 26, and protects the substrate side layer 26 from the plating solution used in the first metal layer formation process. The material constituting the intermediate layer 27 can be a material with a coefficient of thermal expansion between that of the main body side layer 25 and the substrate side layer 26. The material constituting the intermediate layer 27 can also be a material with a surface free energy between that of the main body side layer 25 and the substrate side layer 26. For example, the intermediate layer 27 can contain titanium (Ti), titanium nitride (TiN), aluminum (Al), neodymium-containing aluminum alloy (Al-Nd), silicon oxide (SiO), silicon dioxide (SiO2), nickel (Ni), copper (Cu), chromium (Cr), or gold (Au).

[0331] Through holes 40 may be provided in the mask layer 20. Two or more through holes 40 may be provided in the mask layer 20. The through holes 40 can penetrate the mask layer 20. In this embodiment, the through holes 40 extend from the first surface 20a to the second surface 20b and penetrate the mask layer 20. In this case, the through holes 40 can penetrate the first metal layer 21 and the second metal layer 22.

[0332] The opening size of the through hole 40 in the second surface 20b in a predetermined direction (e.g., the first direction D11 or the second direction D12 described later) can be larger than the opening size of the through hole 40 in the first surface 20a in that predetermined direction. In one embodiment, the cross-sectional opening of the through hole 40 in a direction parallel to the first surface 20a can gradually increase from the first surface 20a toward the second surface 20b. In other words, the cross-sectional area of ​​each through hole 40 in a cross section parallel to the first surface 20a at each location along the normal direction of the mask layer 20 can gradually increase from the first surface 20a toward the second surface 20b. In this case, the through hole 40 can have a wall surface 41 formed away from the central axis CL of the through hole 40 from the first surface 20a toward the second surface 20b. In FIG3, an example is shown where the wall surface 41 of the through hole 40 is inclined linearly relative to the central axis CL from the first surface 20a toward the second surface 20b away from the central axis CL.

[0333] As shown in Figures 2 and 4, the through-holes 40 can form two or more through-hole groups 30. Each through-hole group 30, when viewed from above, is located within the substrate opening 16 of the mask substrate 15. That is, the through-hole group 30 (or the effective area 23 described later) can be located within the substrate opening 16, or multiple through-hole groups 30 (or multiple effective areas 23) can be located within the substrate opening 16. Furthermore, all through-hole groups 30 can be located within one substrate opening 16. As shown in Figure 4, each through-hole group 30 can be configured as a group of two or more through-holes 40. The term "through-hole group 30" is used to refer to an assembly of multiple through-holes 40 arranged in a regular pattern. The through-hole 40 constituting the outer edge of a through-hole group 30 is the outermost through-hole 40 among the multiple through-holes 40 arranged in the same regular pattern. Further out of the outermost through hole 40 in a through hole group 30, there may be no through holes 40 arranged in the same regular pattern to allow the vapor-deposited material 82 to pass through.

[0334] As shown in Figures 2 and 4, mask crossbars 28a and 28b may be provided between adjacent through-hole groups 30. Through-holes 40 for allowing vapor-deposited material 82 to pass through may not be provided in mask crossbars 28a and 28b. Mask crossbars 28a and 28b may include a first mask crossbar 28a and a second mask crossbar 28b extending in mutually orthogonal directions. The first mask crossbar 28a may extend along a second direction D12, and the second mask crossbar 28b may extend along a first direction D11. Multiple first mask crossbars 28a may be arranged along the first direction D11. Multiple second mask crossbars 28b may be arranged along the second direction D12. The first mask crossbars 28a and 28b intersect at an intersection 29. Through-holes and recesses (not shown) for other purposes may be provided in mask crossbars 28a and 28b. These other through holes and recesses may not be arranged in a regular pattern with the through holes 40, or may not be considered part of the through hole group 30. The mask crossbars 28a and 28b may form part of the surrounding area 24, which will be described later.

[0335] As shown in Figure 4, multiple through-hole groups 30 can be arranged at predetermined intervals (with predetermined spacing). The through-hole groups 30 can be arranged at predetermined intervals in the first direction D11 and in the second direction D12. The through-hole groups 30 can be arranged with a first mask crossbar 28a between them in the first direction D11, and with a second mask crossbar 28b between them in the second direction D12. The spacing between the through-hole groups 30 in the first direction D11 and the second direction D12 can be different, or they can be equal. Figure 4 shows an example where the spacing in the first direction D11 is equal to the spacing in the second direction D12. As shown in Figure 4, the through-hole groups 30 can be arranged side-by-side. That is, each through-hole group 30 constituting one column along the first direction D11 and each through-hole group 30 constituting other columns adjacent to that column in the second direction D12 can be arranged in the second direction D12.

[0336] In Figure 4, C1 represents the distance between adjacent through-hole groups 30 in the first direction D11. Distance C1 corresponds to the width of the first mask crossbar 28a. Similarly, C2 represents the distance between adjacent through-hole groups 30 in the second direction D12. Distance C2 corresponds to the width of the second mask crossbar 28b. Distances C1 and C2 can be different, but in the example shown in Figure 4, distances C1 and C2 are equal. Distances C1 and C2 can be set according to the width of the cutting saw used when cutting the vapor-deposited substrate 110 (see Figure 15A) containing multiple organic devices 100 including organic layers 130A, 130B, 130C, etc., for each organic device 100. The cutting of the vapor-deposited substrate 110 can be performed by a single cut that divides the region between adjacent organic devices 100. Single-cutting allows for efficient segmentation of the vapor-deposited substrate 110 through a single cut. Single-cutting can also be applied when the distances C1 and C2 are relatively small. In the case of single-cutting, the distances C1 and C2 can be set to values ​​equal to or similar to the width of the cutting saw. Regarding the cutting of the vapor-deposited substrate 110, instead of single-cutting, double-cutting can be performed by dividing the region between adjacent organic devices 100 using two cuts. For example, two cuts can be made: one along the edge of one organic device 100 and another along the edge of another organic device 100. Such double-cutting can be applied when the distances C1 and C2 are large or when the width of the cutting saw is small. When using double-cutting, the cutting time of the vapor-deposited substrate 110 can be shortened by applying a narrow double cut.

[0337] The distances C1 and C2 can be, for example, 30 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. By making the distances C1 and C2 30 μm or more, the cutting width for cutting the vapor-deposited substrate 110 using a single cut with a cutting saw can be ensured, and the strength of the vapor-deposited mask 10 can be improved. Alternatively, the distances C1 and C2 can be, for example, 240 μm or less, 260 μm or less, 280 μm or less, or 300 μm or less. By making the distances C1 and C2 300 μm or less, the surface adhesion efficiency to the vapor-deposited substrate 110 can be improved. The range of distances C1 and C2 can also be determined by a first group consisting of 30 μm, 50 μm, 100 μm, and 150 μm and / or a second group consisting of 240 μm, 260 μm, 280 μm, and 300 μm. The ranges of distances C1 and C2 can also be determined by a combination of any one of the values ​​contained in group 1 and any one of the values ​​contained in group 2. Similarly, the ranges of distances C1 and C2 can be determined by a combination of any two values ​​contained in group 1 and group 2. For example, it can be 30μm or higher than 300μm, 30μm or higher than 280μm, 30μm or higher than 260μm, 30μm or higher than 240μm, 30μm or higher than 150μm, 30μm or higher than 100μm, 30μm or higher than 50μm, 50μm or higher than 300μm, 50μm or higher than 280μm, 50μm or higher than 260μm, 50μm or higher than 240μm, 50μm or higher than 150μm, 50μm or higher than 100μm, 100μm or higher than 300μm, or 100μm or higher than 300μm. μm above 280μm, can be 100μm above 260μm, can be 100μm above 240μm, can be 100μm above 150μm, can be 150μm above 300μm, can be 150μm above 280μm, can be 150μm above 260μm, can be 150μm above 240μm, can be 240μm above 300μm, can be 240μm above 280μm, can be 240μm above 260μm, can be 260μm above 300μm, can be 260μm above 280μm, or can be 280μm above 300μm.

[0338] As shown in Figures 4 and 5A, in a single through-hole group 30, multiple through holes 40 can be arranged at predetermined intervals or with predetermined spacing. The through holes 40 can also be arranged at predetermined spacing (symbol C3 in Figure 5A) in the first direction D11 and at predetermined spacing (symbol C4 in Figure 5A) in the second direction D12. The spacing C3 and C4 of the through holes 40 can be different in the first direction D11 and the second direction D12, but they can also be equal. Figure 5A shows an example where the spacing C3 in the first direction D11 is equal to the spacing C4 in the second direction D12. As shown in Figure 5A, the through holes 40 can be arranged side-by-side. That is, the through holes 40 constituting one column along the first direction D11 and the through holes 40 constituting other columns adjacent to that column in the second direction D12 can be arranged in the second direction D12. The spacing C3 and C4 of the through holes 40 can be determined according to the pixel density of the display device or projection device, for example, as follows.

[0339] • For pixel densities above 600ppi: pixel pitch below 42.3μm

[0340] • For pixel densities of 1200ppi or higher: pixel pitch below 21.2μm

[0341] • For pixel densities above 3000ppi: pixel pitch below 8.5μm

[0342] • For pixel densities above 5000ppi: pixel pitch below 5.1μm

[0343] A display or projection device with a pixel density of 600 ppi can be used to display images or videos at a distance of approximately 15 cm from the eye, for example, it can be used in smartphones. A display or projection device with a pixel density of 1200 ppi can be used to display images or videos at a distance of approximately 8 cm from the eye, for example, it can be used to display or project images or videos used to represent virtual reality (VR). A display or projection device with a pixel density of 3000 ppi can be used to display images or videos at a distance of approximately 3 cm from the eye, for example, it can be used to display or project images or videos used to represent augmented reality (AR). A display or projection device with a pixel density of 5000 ppi can be used to display images or videos at a distance of approximately 2 cm from the eye, for example, it can be used to display or project images or videos used to represent augmented reality.

[0344] The through holes 40 in a through hole group 30 may not be arranged side-by-side, but rather staggered as shown in FIG. 5B. That is, the through holes 40 constituting one column along the first direction D11 and the through holes 40 constituting other columns adjacent to that column in the second direction D12 may not be arranged in the second direction D12. In the example shown in FIG. 5B, the through holes 40 constituting one column and the through holes 40 constituting other adjacent columns are staggered in the first direction D11 by an offset of half the arrangement spacing C3 in the first direction. However, the present invention is not limited to this, and the aforementioned offset is not limited to half the arrangement spacing C3. In addition, FIG. 5B shows an example in which a column of two adjacent through holes 40 in the second direction D12 is staggered in the first direction D11, but it is also possible for a column of two adjacent through holes 40 in the first direction D11 to be staggered in the second direction D12.

[0345] As shown in Figure 5A, the through-hole 40 can have a roughly rectangular outline when viewed from above. In this case, the four corners of the outline of the through-hole 40 can be curved. The shape of the outline can be arbitrarily determined according to the shape of the pixels. For example, it can have the shape of other polygons such as hexagons and octagons, or it can have a circular shape. In addition, the shape of the outline can also be a combination of multiple shapes. Furthermore, the through-hole 40 can each have a different outline shape. The opening size of the through-hole 40 in the first direction D11 can be the size between the two intersection points of the straight line (equivalent to the first intermediate line ML1 described later in Figure 5A) extending from the center point O of the opening in the first direction D11 and the outline of the opening. The opening size of the through-hole 40 in the second direction D12 can be the size between the two intersection points of the straight line (equivalent to the second intermediate line ML2 described later in Figure 5A) extending from the center point O of the opening in the second direction D12 and the outline of the opening. The center point O of the opening of the through hole 40 in the first surface 20a and the second surface 20b can be set as the intersection of the first intermediate line ML1 and the second intermediate line ML2. The first intermediate line ML1 can be a line located at an equal distance from two lines extending along the first direction D11 and circumscribed by the outline of the opening. The second intermediate line ML2 can be a line located at an equal distance from two lines extending along the second direction D12 and circumscribed by the outline of the opening. When the through hole 40 has a polygonal outline including an even number of vertices, as shown in FIG5A, the opening size of the through hole 40 can be the interval between a pair of opposing sides in the polygon.

[0346] In Figure 5A, the opening size of the through-hole 40 in the first surface 20a of the mask layer 20 is represented by the symbol S1. Similarly, the opening size of the through-hole 40 in the second surface 20b of the mask layer 20 is represented by the symbol S2. The opening size S2 is larger than the opening size S1. In Figure 5A, the planar shape of the through-hole 40 is square; therefore, the opening size of the through-hole 40 in the first direction D11 is equal to the opening size of the through-hole 40 in the second direction D12. The dimensions of the through-hole 40 in the second direction D12 are representatively represented by the symbols S1 and S2. The symbol S3 represents the distance between adjacent through-holes 40 in the first surface 20a.

[0347] Size S1, size S2 and size S3 can be determined according to the pixel density of the display device or projection device, for example as shown in Table 1 below.

[0348] [Table 1]

[0349]

[0350] As shown in Figure 3, the wall 41 of the through hole 40 can be tilted at an angle θ1 relative to the first surface 20a of the mask layer 20.

[0351] Angle θ1 can be, for example, 60° or more, 65° or more, 70° or more, or 75° or more. By making angle θ1 60° or more, as described later, the arrangement spacing C3 and C4 of the through holes 40 can be reduced. Alternatively, angle θ1 can be, for example, 80° or less, 83° or less, 85° or less, or 90° or less. By making angle θ1 90° or less, the generation of shadows can be suppressed. The range of angle θ1 can also be determined by a first group consisting of 60°, 65°, 70°, and 75° and / or a second group consisting of 80°, 83°, 85°, and 90°. The range of angle θ1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of angle θ1 can also be determined by a combination of any two of the values ​​included in the first group. The range of angle θ1 can also be determined by a combination of any two of the values ​​included in the second group. For example, it can be 60° to 90°, 60° to 85°, 60° to 83°, 60° to 80°, 60° to 75°, 60° to 70°, 60° to 65°, 65° to 90°, 65° to 85°, 65° to 83°, 65° to 80°, 65° to 75°, 65° to 70°, and 70° to 90°. It can be 70° or higher than 85°, it can be 70° or higher than 83°, it can be 70° or higher than 80°, it can be 70° or higher than 75°, it can be 75° or higher than 90°, it can be 75° or higher than 85°, it can be 75° or higher than 83°, it can be 75° or higher than 80°, it can be 80° or higher than 85°, it can be 80° or higher than 83°, it can be 83° or higher than 90°, it can be 83° or higher than 85°, or it can be 85° or higher than 90°.

[0352] The technical meaning of angle θ1 will be explained below. The directional composition of the vapor deposition material 82 flying from the vapor deposition material 82 in the vapor deposition process of depositing the vapor deposition material 82 onto the vapor deposition substrate 110 using the vapor deposition mask 10 will be explained. According to the structure of the crucible 81 shown in FIG. 1, in addition to the component flying from the vapor deposition source (crucible 81) toward the vapor deposition substrate 110 along the thickness direction D2 of the vapor deposition mask 10, the vapor deposition material 82 sometimes also contains a component flying in a direction inclined relative to the thickness direction D2 of the vapor deposition mask 10. In this case, a portion of the vapor deposition material 82 flying in the inclined direction adheres to the second surface 20b of the mask layer 20, the wall surface 41 of the through-hole 40, before reaching the vapor deposition substrate 110. Therefore, the thickness of the vapor deposition layer (or the layers 130A, 130B, 130C described later) formed on the vapor deposition substrate 110 becomes thinner the closer it is to the wall surface 41 of the through-hole 40. The phenomenon where the adhesion of this vapor-deposited material 82 to the vapor-deposited substrate 110 is hindered by the wall 41 of the through-hole 40 is also called shadowing. As a countermeasure to suppress shadowing, reducing the aforementioned angle θ1 and reducing the thickness H2 of the mask layer 20 are considered.

[0353] Reducing the angle θ1 means that the opening of the through-hole 40 in the second surface 20b becomes larger. In this case, the walls 41 of the through-holes 40 adjacent to each other on the second surface 20b are connected, and there is no second surface 20b between these through-holes 40. That is, the material between the through-holes 40 adjacent to each other on the second surface 20b is removed by laser irradiation during the through-hole forming process described later. Therefore, the angle θ1 does not need to be too small. In this case, it is possible to reduce the arrangement spacing C3 and C4 of the through-holes 40 while ensuring the mechanical strength of the mask layer 20.

[0354] If the suppression angle θ1 is too small, the thickness H2 of the mask layer 20 can be reduced. This can suppress the generation of shadows. However, simply reducing the thickness H2 means a decrease in the mechanical strength of the mask layer 20. Therefore, the thickness H2 does not need to be too small. In this case, the mechanical strength of the mask layer 20 can be ensured.

[0355] Therefore, in this embodiment, the angle θ1 is relatively large, for example, 60° or more. This angle θ1 is larger than that of conventional vapor deposition masks, for example, 50° or less. Therefore, the wall surface 41 of the through-hole 40 can be formed in a shape that is nearly perpendicular to the first surface 20a and the second surface 20b of the mask layer 20, and the material of the mask layer 20 can remain around the through-hole 40. Therefore, the mechanical strength of the mask layer 20 can be improved. In addition, by increasing the angle θ1, the spacing C3 and C4 of the through-hole 40 can be reduced.

[0356] Thus, the angle θ1 of the vapor deposition mask 10 in this embodiment is 60° or more and 90° or less. Therefore, the vapor deposition mask 10 of this embodiment can be used in a vapor deposition apparatus 80 having a crucible 81 with a vapor deposition angle of 90° or close to 90° (e.g., 60° or more and 90° or less), or it can be used in a surface vapor deposition apparatus (not shown). In the vapor deposition apparatus 80 having the crucible 81 shown in FIG1, the vapor deposition material 82 sometimes contains components that fly in a direction inclined relative to the thickness direction D2. In contrast, in a surface vapor deposition apparatus, the vapor deposition source disposed below the vapor deposition substrate 110 has a planar extension facing the vapor deposition mask 10. As a result, the vapor deposition material 82 can fly towards the vapor deposition substrate 110 along the thickness direction D2. Therefore, the vapor deposition material 82 can fly in equally in the first direction D11 and the second direction D12, respectively. Its vapor deposition angle is 90° or close to 90°.

[0357] Additionally, a single through-hole group 30 is sometimes referred to as an effective region 23. The region surrounding the effective region 23 is sometimes referred to as the surrounding region 24. In this case, the surrounding region 24 surrounds multiple effective regions 23.

[0358] When using a vapor deposition mask 10 to fabricate display devices such as organic devices 100 (described later), one effective area 23 corresponds to the display area of ​​one organic device 100. Therefore, according to the vapor deposition mask 10 shown in FIG. 2, multiple organic devices 100 can be deposited on one vapor deposition substrate 110. Such vapor deposition is also called multi-sided deposition. One effective area 23 sometimes also corresponds to the display area of ​​multiple organic devices 100.

[0359] For example, as shown in Figure 4, the effective area 23 can have a generally rectangular outline when viewed from above. The outline of the effective area 23 can be defined by a line connecting from the outside to the outermost through hole 40 in the corresponding through hole group 30. More specifically, the outline of the effective area 23 can be defined by a line connecting to the opening of the through hole 40. In the example shown in Figure 4, since the through holes 40 are arranged side by side, the outline of the effective area 23 is a generally rectangular outline. Although not shown, each effective area 23 can also have an outline of various shapes depending on the shape of the display area of ​​the organic device 100. For example, each effective area 23 can have a circular outline.

[0360] Additionally, as shown in Figures 2 and 3, a first alignment mark 45 for aligning with the vapor deposition substrate 110 can be provided on the mask substrate 15. The first alignment mark 45 can be positioned anywhere as long as it allows alignment of the through-hole 40 of the vapor deposition mask 10 with the vapor deposition substrate 110. For example, as shown in Figures 2 and 3, the first alignment mark 45 can be formed on the substrate frame 17 in the second substrate surface 15b of the mask substrate 15. When the vapor deposition substrate 110 has light transmittance, meaning it allows visible light to pass through, the first alignment mark 45 provided on the mask substrate 15 can be visually confirmed through the vapor deposition substrate 110, and alignment of the vapor deposition substrate 110 with the through-hole 40 of the vapor deposition mask 10 can be easily achieved. When the vapor deposition substrate 110 is not light transmittant, for example, the first alignment mark 45 can be visually confirmed by irradiating the vapor deposition substrate 110 with infrared light. Figure 2 shows an example where the planar shape of the first alignment mark 45 is circular, but it is not limited to this and can also be any shape such as rectangular or cross-shaped. Alternatively, the first alignment mark 45 can also be formed into a concave shape by etching the second substrate surface 15b of the mask substrate 15 in the substrate etching process described later.

[0361] Additionally, as shown in Figures 3 and 4, a second alignment mark 46 for aligning with the vapor deposition substrate 110 can be provided on the first surface 20a of the mask layer 20. The second alignment mark 46 can be positioned arbitrarily, as long as it allows alignment of the through-hole 40 of the vapor deposition mask 10 with the vapor deposition substrate 110. For example, the second alignment mark 46 can be positioned closer to the through-hole 40 than the first alignment mark 45. For example, as shown in Figures 3 and 4, the second alignment mark 46 can be formed within the substrate opening 16 of the mask substrate 15 in the first surface 20a of the mask layer 20 when viewed from above. For example, the second alignment mark 46 can be located between mask crossbars 28a and 28b formed between adjacent through-hole groups 30. For example, the second alignment mark 46 can be located at the intersection 29 where the first mask crossbar 28a and the second mask crossbar 28b intersect. In Figure 4, a second alignment mark 46 is provided at each intersection 29 where the first mask crossbar 28a and the second mask crossbar 28b intersect. In other words, the second alignment mark 46 is provided at each first mask crossbar 28a and at each second mask crossbar 28b. In this case, the second alignment mark 46 is provided at a position corresponding to each corner of each through-hole group 30.

[0362] When the vapor deposition substrate 110 is transparent to visible light, the second alignment mark 46 disposed on the mask layer 20 can be visually confirmed through the vapor deposition substrate 110, and the through hole 40 of the vapor deposition mask 10 can be easily aligned. When the vapor deposition substrate 110 is not transparent, the second alignment mark 46 can be visually confirmed by irradiating infrared light through the vapor deposition substrate 110, for example. In FIG4, an example of the planar shape of the second alignment mark 46 being circular is shown, but it is not limited to this, and any shape such as a rectangle or cross can be formed. In addition, the second alignment mark 46 can be formed into a concave shape, for example, by irradiating the first surface 20a of the first metal layer 21 with a laser. However, the present invention is not limited to this, and the second alignment mark 46 can also be formed into a concave shape, for example, by etching the first surface 20a of the first metal layer 21. Alternatively, the second alignment mark 46 can also be formed on the first metal layer 21 by plating during the first metal layer formation process, thus having the second alignment mark 46. In this case, the first metal layer 21 can be formed by plating while a resist (not shown) is formed at the position corresponding to the second alignment mark 46 on the surface of the second metal layer 22 opposite to the mask substrate 15. This allows the second alignment mark 46 to be formed through the first metal layer 21.

[0363] Next, the manufacturing method of the vapor deposition mask 10 with this structure will be described with reference to FIGS. 6 to 14. Here, an example in which the mask substrate 15 is a silicon substrate will be described. The manufacturing method of the vapor deposition mask 10 of this embodiment may include a substrate preparation process, a mask layer formation process, a substrate opening formation process, and a through-hole formation process. In FIGS. 13 and 14, the number of through holes 40 has been reduced compared to FIG. 3 for easier understanding of the drawings.

[0364] First, as shown in FIG6, as a substrate preparation process, a mask substrate 15 having a first substrate surface 15a and a second substrate surface 15b can be prepared. For example, as the mask substrate 15, a silicon wafer with a surface orientation (110) where the first substrate surface 15a and the second substrate surface 15b are polished into a mirror shape can be used.

[0365] Following the substrate preparation process, as a mask layer formation process, a mask layer 20 having a first surface 20a and a second surface 20b can be formed on the mask substrate 15. The second surface 20b of the mask layer 20 faces the mask substrate 15 and is attached to the first substrate surface 15a of the mask substrate 15. In the mask layer formation process of this embodiment, firstly, a second metal layer formation process for forming a second metal layer 22 is performed, and then a first metal layer formation process for forming a first metal layer 21 is performed. The first metal layer formation process is an example of a mask body layer formation process, and the second metal layer formation process is an example of a mask intermediate layer formation process.

[0366] In the second metal layer formation process, as shown in FIG7, a second metal layer 22 is formed on the first substrate surface 15a of the mask substrate 15. More specifically, a second metal layer 22 comprising a main body side layer 25, a substrate side layer 26 and an intermediate layer 27 is formed on the mask substrate 15.

[0367] First, a substrate side layer 26 is formed. The substrate side layer 26 can be formed entirely on the first substrate surface 15a of the mask substrate 15. The substrate side layer 26 can be formed, for example, by sputtering using a sputtering target made of the material of the substrate side layer 26. The formed substrate side layer 26 is attached to the mask substrate 15.

[0368] Next, an intermediate layer 27 is formed on the substrate side layer 26. The intermediate layer 27 can be formed over the entire surface of the substrate side layer 26. The intermediate layer 27 can be formed, for example, by sputtering using a sputtering target made of a material of the intermediate layer 27 (e.g., titanium). The formed intermediate layer 27 is attached to the substrate side layer 26.

[0369] Next, a main body side layer 25 is formed on the intermediate layer 27. The main body side layer 25 can be formed on the entire surface of the intermediate layer 27. The main body side layer 25 can be formed, for example, by sputtering a sputtering target made of a material of the main body side layer 25 (e.g., copper). The formed main body side layer 25 is attached to the intermediate layer 27.

[0370] Thus, the second metal layer 22, which includes the main body side layer 25, the substrate side layer 26 and the intermediate layer 27, is attached to the mask substrate 15.

[0371] In the first metal layer formation process, as shown in FIG8, the first metal layer 21 is formed on the side of the second metal layer 22 opposite to the mask substrate 15. More specifically, the first metal layer 21 is formed on the main body side layer 25. The first metal layer 21 can be formed, for example, by a plating process. Here, the second metal layer 22 is used as a power supply electrode, and the first metal layer 21 is formed by electroplating. More specifically, a plating solution is supplied to the side of the main body side layer 25 opposite to the mask substrate 15. For example, the mask substrate 15 on which the second metal layer 22 is formed is immersed in a plating tank filled with plating solution. The main body side layer 25 of the second metal layer 22 functions as a plated power supply electrode. Thus, the plating solution is separated on the side of the main body side layer 25 opposite to the mask substrate 15 to form the first metal layer 21. The first metal layer 21 can be formed on the entire side of the main body side layer 25 opposite to the mask substrate 15. Thus, the first metal layer 21 is attached to the main body side layer 25.

[0372] The composition of the plating solution used is appropriately determined according to the required characteristics of the first metal layer 21. For example, if the first metal layer 21 is composed of an iron alloy containing nickel, a mixed solution containing a nickel compound and a solution containing an iron compound can be used as the plating solution. For example, a mixed solution containing nickel sulfamate, nickel bromide, and ferrous sulfamate can be used. Alternatively, if the first metal layer 21 is composed of nickel, a solution containing a nickel compound can be used as the plating solution. For example, a nickel sulfamate solution can be used. Furthermore, if the first metal layer 21 is composed of a nickel alloy containing cobalt, a mixed solution containing a nickel compound and a solution containing a cobalt compound can be used as the plating solution. For example, a cobalt sulfamate solution can be used. Various additives can be included in each of the above plating solutions. Examples of additives include pH buffering materials such as boric acid, malonic acid, and saccharin.

[0373] After the first metal layer 21 is formed, it can be annealed (sintered). This allows the first metal layer 21, formed by the plating process, to recrystallize, thereby reducing its coefficient of thermal expansion. In general, even if a rolled material and a plating material have the same material composition, the coefficient of thermal expansion of the plating material tends to be higher than that of the rolled material. Therefore, the first metal layer 21 can be recrystallized, reducing its coefficient of thermal expansion. During such annealing, the first metal layer 21 can be heated to 600°C for 5 minutes, for example.

[0374] In the first metal layer formation process, the specific method of plating is not particularly limited as long as the first metal layer 21 can be formed. For example, electroless plating can be performed instead of electroplating. In the case of electroless plating, since there are no electrodes as in electroplating, the thickness of the first metal layer 21 formed by electroless plating can be made uniform. In the case of electroless plating, a catalyst layer (not shown) can be provided on the side of the second metal layer 22 opposite to the mask substrate 15. Even in the case of electroplating, the same catalyst layer can be provided on the second metal layer 22.

[0375] After the mask layer formation process, as a substrate opening formation process, a substrate opening 16 can be formed on the mask substrate 15 to expose the second surface 20b of the mask layer 20. In the substrate opening formation process of this embodiment, a resist layer formation process, a substrate etching process, and a resist layer removal process are performed sequentially.

[0376] In the resist layer formation process, as shown in FIG9, a resist layer 50 is formed on the second substrate surface 15b of the mask substrate 15. The resist layer 50 has a resist opening 51 corresponding to the substrate opening 16. More specifically, firstly, a liquid resist is applied to the second substrate surface 15b of the mask substrate 15 using a spin coater, and then dried and cured to form the resist layer 50. The resist layer 50 can be formed entirely on the second substrate surface 15b. Next, the resist layer 50 is patterned by photolithography. For example, if the resist layer 50 is a negative resist, an exposure mask (not shown) is disposed on the resist layer 50 to prevent light from illuminating the portion of the resist layer 50 corresponding to the resist opening 51. Then, the resist layer 50 is exposed through this exposure mask. Then, the exposed resist layer 50 is developed to remove the unexposed portions of the resist layer 50, forming the resist opening 51. After development, the resist layer 50 can be heated to improve the adhesion between the resist layer 50 and the mask substrate 15. For example, a phenolic varnish-based resist can be used as a negative resist. A positive resist can be used as the resist layer 50. Alternatively, a dry film resist can be adhered to the mask substrate 15 as the resist layer 50.

[0377] The thickness H8 of the resist layer 50 can be, for example, 0.1 μm or more, 0.5 μm or more, 1.0 μm or more, or 1.5 μm or more. By making the thickness H8 0.1 μm or more, etching of the portion covered by the resist layer 50 can be suppressed during the substrate etching process described later. Alternatively, the thickness H8 can be, for example, 20.0 μm or less, 30.0 μm or less, 40.0 μm or less, or 50.0 μm or less. By making the thickness H8 50.0 μm or less, availability can be ensured in the case of dry film resists, and efficient formation of the resist layer 50 can be achieved in the case of liquid resists. The range of thickness H8 can also be determined by a first group consisting of 0.1 μm, 0.5 μm, 1.0 μm, and 1.5 μm and / or a second group consisting of 20.0 μm, 30.0 μm, 40.0 μm, and 50.0 μm. The range of thickness H8 can also be determined by a combination of any one of the values ​​included in group 1 above and any one of the values ​​included in group 2 above. The range of thickness H8 can also be determined by a combination of any two values ​​included in group 1 above. The range of thickness H8 can also be determined by a combination of any two values ​​included in group 2 above. For example, it can be 0.1μm or higher than 50.0μm, 0.1μm or higher than 40.0μm, 0.1μm or higher than 30.0μm, 0.1μm or higher than 20.0μm, 0.1μm or higher than 1.5μm, 0.1μm or higher than 1.0μm, 0.1μm or higher than 0.5μm, 0.5μm or higher than 50.0μm, 0.5μm or higher than 40.0μm, 0.5μm or higher than 30.0μm, 0.5μm or higher than 20.0μm, 0.5μm or higher than 1.5μm, 0.5μm or higher than 1.0μm, 1.0μm or higher than 50.0μm, or 1. 0μm to 40.0μm, can be 1.0μm to 30.0μm, can be 1.0μm to 20.0μm, can be 1.0μm to 1.5μm, can be 1.5μm to 50.0μm, can be 1.5μm to 40.0μm, can be 1.5μm to 30.0μm, can be 1.5μm to 20.0μm, can be 20.0μm to 50.0μm, can be 20.0μm to 40.0μm, can be 20.0μm to 30.0μm, can be 30.0μm to 50.0μm, can be 30.0μm to 40.0μm, or can be 40.0μm to 50.0μm.

[0378] Alternatively, the thickness H8 of the resist layer 50 can be, for example, 0.1 μm or more, 0.2 μm or more, 0.3 μm or more, or 0.4 μm or more. By making the thickness H8 0.1 μm or more, it is possible to suppress the etching of the portion covered by the resist layer 50 during the substrate etching process described later. Furthermore, H8 can be, for example, 0.6 μm or less, 0.7 μm or less, 0.8 μm or less, or 0.9 μm or less. By making the thickness H8 0.9 μm or less, in the case of dry film resists, availability can be further ensured, and in the case of liquid resists, the resist layer 50 can be formed more efficiently. The range of H8 can also be determined by a first group consisting of 0.1 μm, 0.2 μm, 0.3 μm, and 0.4 μm and / or a second group consisting of 0.6 μm, 0.7 μm, 0.8 μm, and 0.9 μm. The range of H8 can also be determined by a combination of any one of the values ​​contained in group 1 above and any one of the values ​​contained in group 2 above. The range of H8 can also be determined by a combination of any two values ​​contained in group 1 above. The range of H8 can also be determined by a combination of any two values ​​contained in group 2 above. For example, it can be 0.1μm or higher than 0.9μm, 0.1μm or higher than 0.8μm, 0.1μm or higher than 0.7μm, 0.1μm or higher than 0.6μm, 0.1μm or higher than 0.4μm, 0.1μm or higher than 0.3μm, 0.1μm or higher than 0.2μm, 0.2μm or higher than 0.9μm, 0.2μm or higher than 0.8μm, 0.2μm or higher than 0.7μm, 0.2μm or higher than 0.6μm, 0.2μm or higher than 0.4μm, 0.2μm or higher than 0.3μm, or 0.3μm or higher than 0.9μm. It can be 0.3μm or higher than 0.8μm, or 0.3μm or higher than 0.7μm, or 0.3μm or higher than 0.6μm, or 0.3μm or higher than 0.4μm, or 0.4μm or higher than 0.9μm, or 0.4μm or higher than 0.8μm, or 0.4μm or higher than 0.7μm, or 0.4μm or higher than 0.6μm, or 0.6μm or higher than 0.9μm, or 0.6μm or higher than 0.8μm, or 0.6μm or higher than 0.7μm, or 0.7μm or higher than 0.9μm, or 0.7μm or higher than 0.8μm, or 0.8μm or higher than 0.9μm.

[0379] In the substrate etching process, as shown in FIG10, the mask substrate 15 is etched through the resist opening 51 to form the substrate opening 16. As a result, a portion of the second surface 20b of the mask layer 20 is exposed in the substrate opening 16. The etching process of the mask substrate 15 can be a dry etching process using an etching gas. An example of an etching gas is an etching medium. In this case, for example, the mask substrate 15 can be etched using etching gases such as DEEP-RIE, ICP (Inductively Coupled Plasma), SF6 gas, CF-based gas, or chlorine-based gas. In the case of dry etching, the etching rate can be increased, and the wall of the substrate opening 16 can be formed substantially perpendicular to the first substrate surface 15a. If the substrate side layer 26 is formed of a material capable of suppressing the erosion of the etching medium, it functions as a barrier layer to stop the etching. The etching of the mask substrate 15 can also be a wet etching process using an etching solution. An example of an etching solution is an etching medium. For example, a 35% by weight aqueous solution of potassium hydroxide at 80°C can be used as the etching solution, and the mask substrate 15 can be immersed in the etching solution for a specified time. The portion of the mask substrate 15 exposed from the resist layer 50 can also be anisotropically etched in a manner dependent on planar orientation (or crystal orientation).

[0380] The substrate etching process will be described in more detail. Here, an example of forming the substrate opening 16 shown in FIG3 by means of so-called deep RIE (deep reactive ion etching) will be described using FIG11A to FIG11E. FIG11A to FIG11E show schematic partial enlarged cross sections of the substrate opening 16 shown in FIG3.

[0381] First, as shown in FIG11A, anisotropic etching is performed on the portion of the resist layer 50 exposed by the resist opening 51. This forms a first recess 16a1 on the second substrate surface 15b. The first recess 16a1 includes a wall surface 16b1 extending from the resist opening 51 toward the first substrate surface 15a and an end surface 16c1. The wall surface 16b1 is formed to extend toward the first substrate surface 15a. That is, as shown in FIG11A, the angle θ2 formed by the wall surface 16b1 and the first substrate surface 15a can be slightly larger than 90°.

[0382] In anisotropic dry etching, a plasma of etching gas is generated inside a vapor deposition chamber (not shown) where a mask substrate 15 is disposed, and the plasma is irradiated onto the second substrate surface 15b of the mask substrate 15. The etching gas described above can be used as the etching gas for generating the plasma. Etching occurs not only in the thickness direction of the mask substrate 15, but also slightly along the direction of the second substrate surface 15b. However, by setting a shorter etching time, the etching along the direction of the second substrate surface 15b can be suppressed.

[0383] After the first recess 16a1 is formed, as shown in FIG11B, a first protective layer 16d1 is formed on the wall surface 16b1 and the end surface 16c1 of the first recess 16a1. The first protective layer 16d1 is formed on the wall surface 16b1 and the end surface 16c1 by supplying a raw material gas such as C4F8 gas to the first recess 16a1.

[0384] After the first protective layer 16d1 is formed, as shown in FIG11C, the first recess 16a1 is subjected to anisotropic dry etching. This removes the portion of the first protective layer 16d1 located at the end face 16c1, forming the second recess 16a2. More specifically, the end face 16c1 of the first recess 16a1 is subjected to anisotropic dry etching in the same manner as the process for forming the first recess 16a1, forming the second recess 16a2 connected to the first recess 16a1. At this time, similar to the wall surface 16b1 of the first recess 16a1, the wall surface 16b2 of the second recess 16a2 is also formed to extend towards the first substrate surface 15a.

[0385] The first protective layer 16d1 formed on the wall surface 16b1 of the first recess 16a1 can be removed by anisotropic dry etching used to form the second recess 16a2, or it can remain intact. Even if the first protective layer 16d1 is removed, erosion of the wall surface 16b1 of the first recess 16a1 by etching can be suppressed before the first protective layer 16d1 is removed. Furthermore, if the first protective layer 16d1 remains intact, erosion of the wall surface 16b of the first recess 16a1 by etching can be further suppressed. Even if the first protective layer 16d1 is not removed, it can be partially removed by etching.

[0386] Furthermore, as shown in FIG11D, a second protective layer 16d2 is formed on the wall surface 16b2 and end surface 16c2 of the second recess 16a2. The second protective layer 16d2 can be formed in the same way as the first protective layer 16d1.

[0387] As shown in FIG11E, the formation of this recess and the protective layer are repeated multiple times until the etching of the mask substrate 15 reaches the substrate side layer 26. In FIG11E, for the sake of simplicity, an example is shown where a third recess 16a3 containing a wall surface 16b3 and a fourth recess 16a4 containing a wall surface 16b4 are formed after the second recess 16a2. The fourth recess 16a4 reaches the substrate side layer 26, which functions as an etching barrier layer. The substrate side layer 26 in this embodiment is formed of a material capable of suppressing the erosion of etching gases. Therefore, the substrate side layer 26 can function as an etching barrier layer and remains unetched. A third protective layer 16d3 is formed on the wall surface 16b3, but no protective layer is formed on the wall surface 16b4.

[0388] Then, a treatment solution is used to remove the protective layers 16d1-16d3 remaining on the wall surfaces 16b1-16b3 of each recess 16a1-16a3. For example, hydrofluoroether (HFE) can be used as the treatment solution. Alternatively, the protective layers 16d1-16d3 can be immersed in a treatment solution at a temperature of, for example, around 25°C to 70°C for 30 minutes. The treatment solution can be used without dilution.

[0389] Thus, a substrate opening 16 as shown in FIG. 10 is formed on the mask substrate 15. The wall surface of the substrate opening 16 is formed by the wall surfaces 16b1 to 16b4 of each recess 16a1 to 16a4. The dry etching time for forming the recesses 16a1 to 16a4 can be shortened, and the number of times the formation of the recesses 16a1 to 16a4 and the formation of the protective film can be repeated can be increased. In this case, the wall surface of the substrate opening 16 formed by the wall surfaces 16b1 to 16b4 of each recess 16a1 to 16a4 can be formed substantially perpendicular to the second substrate surface 15b. In addition, a small height difference can be generated on the wall surfaces 16b1 to 16b4 of adjacent recesses 16a1 to 16a4, but this height difference can be reduced by reducing the thickness of the protective layers 16d1 to 16d3. In this case, in the cross-section shown in FIG10, the wall surface of the substrate opening 16 can be formed as a straight line substantially perpendicular to the first substrate surface 15a.

[0390] In the substrate etching process, the process of forming the first alignment mark 45 shown in FIG2 and FIG3 can be performed. That is, the first alignment mark 45 can be formed in the substrate etching process.

[0391] In the resist layer removal process, as shown in FIG12, the resist layer 50 is removed from the mask substrate 15. For example, the resist layer 50 can be removed from the mask substrate 15 by using an alkaline stripping solution.

[0392] Thus, as shown in FIG12, a mask substrate 15 with substrate opening 16 is obtained.

[0393] The substrate opening formation process is not limited to the processes described above. For example, in the substrate opening formation process, a resistive layer (not shown), such as a silicon oxide layer, a silicon nitride layer, or a silicon carbide layer, can be formed on the second substrate surface 15b of the mask substrate 15. In this case, a resistive layer opening can be formed in the resistive layer, and then the mask substrate 15 can be etched through the resistive layer opening. The resistive layer opening can be formed by forming a resist layer with resist openings in the resistive layer using photolithography, and then etching the resistive layer through the resist openings. Furthermore, the mask substrate 15 can be etched through the resistive layer openings to form the substrate opening 16. After forming the substrate opening 16, the resistive layer can be removed.

[0394] After the substrate opening formation process, as a through-hole formation process, a plurality of through-holes 40 can be formed in the mask layer 20 such that they are exposed in the substrate opening 16. The through-holes 40 can be formed by irradiating the mask layer 20 with a laser L. The through-holes 40 can be formed to penetrate the first metal layer 21 and the opening region 22b.

[0395] For example, as shown in Figure 13A, through holes 40 can be formed one by one by irradiation with laser L.

[0396] More specifically, firstly, as shown in FIG13A, the mask substrate 15 and mask layer 20 obtained as described above are placed on the moving stage 60.

[0397] Next, multiple through holes 40 can be formed by repeatedly forming the through holes 40 and moving the moving stage 60. In this case, the irradiation head H does not need to be moved.

[0398] For example, the location where the through-hole 40 should be formed (the center of the through-hole 40) is aligned with the irradiation head H. Next, laser L is irradiated onto the second surface 20b of the mask layer 20 through the substrate opening 16 in the direction from the mask substrate 15 toward the first metal layer 21. As a result, the material in the portion of the mask layer 20 irradiated by laser L is sublimated and removed, forming the through-hole 40 as shown in FIG. 13A. In FIG. 13A, the material of each of the layers 25 to 27 constituting the first metal layer 21 and the second metal layer 22 of the mask layer 20 is removed. In this case, the wall surface 41 of the through-hole 40 tends to be formed perpendicular to the second surface 20b. However, depending on the intensity of laser L, pulse width, and thickness of the mask layer 20, as shown in FIG. 13A, the wall surface 41 of the through-hole 40 can be tilted.

[0399] The laser L irradiating the mask layer 20 can be a femtosecond laser. A femtosecond laser is a pulsed laser with a short pulse width, capable of outputting high-intensity laser light with a relatively short pulse width. The femtosecond laser can irradiate the mask layer 20 with a high-output laser L for a short time. Therefore, it is possible to evaporate material molecules and form a through-hole 40 in a short time. In this case, the formation of burrs on the first surface 20a of the mask layer 20 can be suppressed. Burrs are protrusions produced by processing the metal material. The output of this femtosecond laser L can be, for example, 5W or more and 100W or less. The pulse width of the laser L can be, for example, 1fs or more and 10ns or less. The wavelength of the laser L can be, for example, 250nm or more and 1100nm or less, such as 513nm, which is considered a green laser. The oscillation frequency of the laser L can be, for example, 1Hz or more and 10MHz or less. As an example, when a through-hole 40 is formed by directly irradiating a mask layer 20 with a thickness H2 of 4 μm with laser L without using the photomask 65 described later, the pulse width of laser L can be 260 fs. In this case, the wavelength of laser L can be 513 nm. The number of irradiations of laser L used to form a through-hole 40 can be once or multiple times.

[0400] After forming one through-hole 40, the irradiation of the laser L is stopped. Then, the moving stage 60 is moved so that the position where the next through-hole 40 should be formed (the center of the through-hole 40) faces the irradiation head H. Then, the laser L is irradiated in the same way as described above. By repeating this operation, a plurality of through-holes 40 are formed in the vapor deposition mask 10 of this embodiment.

[0401] As described above, when a through hole 40 is formed by irradiating laser L, the irradiation head H can be moved without moving the moving stage 60.

[0402] The method of forming the through hole 40 is not limited to this. For example, as shown in FIG13B, multiple through holes 40 can be formed in parallel by irradiation with laser L. For example, as shown in FIG13B and FIG13C, laser L can be irradiated from laser generating device 61.

[0403] The laser generating device 61 shown in Figure 13C includes a laser source 62, a first lens 63, a second lens 64 (also called a collimating lens), a photomask 65, a third lens 66 (also called a focusing lens), and a reflector 67. The laser L generated from the laser source 62 is amplified by the first lens 63 and becomes parallel light through the second lens 64. The parallel laser L passes through the mask aperture 65a of the photomask 65 and is focused by the third lens 66. The focused laser L is reflected by the reflector 67 and its direction is changed, illuminating the second surface 20b of the mask layer 20. Although simplified in Figure 13C, the laser L passing through the photomask 65 and the third lens 66 becomes a patterned light corresponding to the through-hole 40, as shown in Figure 13B.

[0404] The photomask 65 has multiple mask holes 65a at positions corresponding to the multiple through holes 40. In the example shown in FIG13B, a corresponding through hole 40 is formed by a laser L passing through one mask hole 65a. In this case, one mask hole 65a can be assigned to one through hole 40. The photomask 65 may comprise a light-transmitting substrate such as glass, and a layer of a metallic material such as chromium formed in a pattern on the substrate, i.e., a layer having the aforementioned mask holes 65a. In FIG13C, the aforementioned substrate is omitted for the sake of simplicity.

[0405] Next, the moving stage 60 can be moved to adjust the irradiation position of the laser L. If the laser generating device 61 is movable, it can also be moved.

[0406] Next, laser L is irradiated onto the second surface 20b of the mask layer 20 from the laser generating device 61. As a result, the material in multiple portions of the mask layer 20 irradiated by laser L is sublimated and removed, forming multiple through-holes 40 in parallel, as shown in FIG13B. Each through-hole 40 is formed by laser L passing through a designated mask hole 65a. The number of irradiations of laser L for forming each through-hole 40 can be once or multiple times. Furthermore, the photomask 65 is not limited to the case of forming multiple through-holes 40 in parallel; it can also be used to form through-holes 40 one by one by passing laser L through a single mask hole 65a. In this case, the through-holes 40 are formed one by one by irradiation with laser L.

[0407] Multiple mask holes 65a can be assigned to a single through-hole 40. In this case, a mask hole 65a with a relatively large planar shape can be arranged in the center of the through-hole 40. Furthermore, mask holes 65a with a relatively small planar shape can be arranged around it. The planar shape of the mask holes 65a can gradually decrease from the center of the through-hole 40 outwards. Such a pattern of mask holes 65a is sometimes referred to as a halftone pattern or a gradient pattern. That is, a mask hole 65a with a relatively large planar shape can be assigned in the center of the through-hole 40, and mask holes 65a with a relatively small planar shape can be assigned around it. In this case, the laser L passing through the large central mask hole 65a irradiates the mask layer 20 with a relatively high intensity. Therefore, a hole penetrating the mask layer 20 can be formed by the laser L passing through this mask hole 65a. The laser L passing through the smaller surrounding mask holes 65a irradiates the mask layer 20 with a relatively low intensity. Therefore, at the location irradiated by the laser L passing through the mask hole 65a, the material is removed in a concave shape without penetrating the mask layer 20. By making the planar shape of the mask hole 65a assigned to one through hole 40 gradually decrease from the center outward, multiple through holes 40 with inclined wall surfaces as shown in FIG3 can be formed in parallel.

[0408] Figure 13B illustrates an example of forming multiple through-holes 40 in parallel by irradiation with laser L using a photomask 65. However, the invention is not limited to this; the laser L can also be irradiated through multiple mask holes 65a of the photomask 65, thereby forming through-holes 40 one by one. That is, when multiple mask holes 65a are allocated to one through-hole 40, the laser L can be irradiated only through these mask holes 65a. In this case, through-holes 40 with inclined wall surfaces 41 can be formed one by one.

[0409] In the through-hole forming process, the second alignment mark 46 shown in Figures 3 and 4 can be formed. That is, the vapor deposition mask 10 is reversed in the vertical direction so that the first surface 20a faces the irradiation head H. Furthermore, a laser can be irradiated onto the first surface 20a of the first metal layer 21 to form the concave second alignment mark 46.

[0410] Thus, the vapor deposition mask 10 of this embodiment, as shown in FIG14, is obtained.

[0411] As described above, the first metal layer 21 in this embodiment is formed by a plating process. In this case, the first metal layer 21 retains stress that acts in the direction of contraction when viewed from above. Therefore, even if the temperature of the first metal layer 21 rises and the first metal layer 21 thermally expands, for example during vapor deposition, the positional accuracy of the through-hole 40 can be maintained as long as the aforementioned stress remains. This is equivalent to setting up a general vapor deposition mask, which is made solely by etching or plating processes, on a frame.

[0412] Next, the manufacturing method of the organic EL display device using the vapor deposition mask 10 of this embodiment will be described with reference to FIG1, FIG15A and FIG15B.

[0413] The constituent elements and display area of ​​the organic device 100 will be described in detail. FIG15A is a top view showing an example of the organic device 100, which is a top view showing the organic layer deposited in the vapor deposition process. FIG15B is a cross-sectional view of the organic device 100 of FIG15A along line BB. FIG15A is a top view showing the organic layer deposited in the vapor deposition process, omitting the second electrode 140 formed after the vapor deposition process (described later). As an example of the organic device 100, an organic EL display device can be cited. The organic device 100 has a light-emitting layer formed on the vapor deposition substrate 110 (described later) by using the vapor deposition mask 10 of this embodiment described above. One organic device 100 can correspond to one display area.

[0414] As shown in Figures 15A and 15B, the organic device 100 includes a vapor deposition substrate 110 and an element 115 located on the vapor deposition substrate 110. The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0415] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 when viewed from above. The insulating layer 160 may, for example, comprise polyimide. The insulating layer 160 may overlap with the ends of the first electrodes 120.

[0416] Organic device 100 can be an active matrix type. For example, although not shown, organic device 100 can have switches electrically connected to multiple elements 115 respectively. The switches are, for example, transistors. The switches can control the on / off switching of voltage or current to the corresponding elements 115.

[0417] The vapor deposition substrate 110 may have a first surface 110a forming the first electrode 120 and a second surface 110b located on the opposite side of the first surface 110a. The vapor deposition substrate 110 may be a plate-shaped component with insulating properties. The vapor deposition substrate 110 may have light transmittance that allows visible light to pass through.

[0418] When the vapor-deposited substrate 110 has a specified transmittance, the transmittance of the vapor-deposited substrate 110 can be such that light emitted from the organic layer 130 can pass through and be displayed. For example, the transmittance of the vapor-deposited substrate 110 in the visible light region can be 80% or more, or it can be 90% or more. The transmittance of the vapor-deposited substrate 110 can be determined by the test method for the total transmittance of plastic-transparent materials according to JIS K7361-1.

[0419] The vapor deposition substrate 110 may or may not be flexible. The vapor deposition substrate 110 may be appropriately selected according to the application of the organic device 100.

[0420] The vapor deposition substrate 110 may contain silicon, for example, and can be a silicon substrate. Alternatively, the vapor deposition substrate 110 may contain glass, for example, a glass substrate. Furthermore, the material of the vapor deposition substrate 110 may be a rigid material without flexibility, such as quartz glass, Pyrex glass, or synthetic quartz. Alternatively, the material of the vapor deposition substrate 110 may be a flexible material with flexibility, such as a resin film (e.g., a polyimide film or a liquid crystal polymer), an optical resin plate, or thin glass. Additionally, the vapor deposition substrate 110 may be a laminate with a barrier layer on one or both sides of the resin film.

[0421] When the vapor deposition substrate 110 is made of a material other than a silicon substrate, the thickness of the vapor deposition substrate 110 can be appropriately selected according to the material used in the vapor deposition substrate 110, the application of the organic device 100, etc. In this case, the thickness of the vapor deposition substrate 110 can be, for example, 0.005 mm or more. Alternatively, the thickness of the vapor deposition substrate 110 can be 5 mm or less.

[0422] Element 115 is configured to perform a certain function by applying a voltage between the first electrode 120 and the second electrode 140 or by flowing current between the first electrode 120 and the second electrode 140. For example, if element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.

[0423] The first electrode 120 comprises a conductive material. For example, the first electrode 120 comprises a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may comprise a transparent and conductive metal oxide such as indium tin oxide.

[0424] The material constituting the first electrode 120 can be metals such as Au, Cr, Mo, Ag, or Mg. Alternatively, the material constituting the first electrode 120 can also be indium tin oxide (ITO), indium zinc oxide (IZO), or inorganic oxides such as zinc oxide or indium oxide. The material constituting the first electrode 120 can also be a conductive polymer such as metal-doped polythiophene. These conductive materials can be used alone or in combination of two or more. When using two or more, a layer composed of each material can be deposited on the conductive material. Furthermore, the conductive material can also be an alloy containing two or more materials. For example, the conductive material can be a magnesium alloy such as MgAg.

[0425] Organic layer 130 contains organic materials. When an electric current is applied to organic layer 130, it can perform certain functions. Applying an electric current means applying a voltage to organic layer 130 or allowing current to flow through it. Organic layer 130 can be a light-emitting layer that emits light when an electric current is applied, or a layer that changes the transmittance or refractive index of light when an electric current is applied. Organic layer 130 may contain organic semiconductor materials.

[0426] As shown in Figure 15B, organic layer 130 may include a first organic layer 130A and a second organic layer 130B. Additionally, as shown in Figure 15A, organic layer 130 may also include a third organic layer 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C are, for example, a red emitting layer, a blue emitting layer, and a green emitting layer. In the following description, the term "organic layer 130" will be used when describing the common structure of the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C.

[0427] The laminated structure comprising the first electrode 120, the first organic layer 130A, and the second electrode 140 is also referred to as the first element 115A. The laminated structure comprising the first electrode 120, the second organic layer 130B, and the second electrode 140 is also referred to as the second element 115B. The laminated structure comprising the first electrode 120, the third organic layer 130C, and the second electrode 140 is also referred to as the third element 115C. In the case where the organic device 100 is an organic EL display device, the first element 115A, the second element 115B, and the third element 115C are each a sub-pixel.

[0428] In the following description, the term "element 115" will be used as a reference numeral when describing the common structure of the first element 115A, the second element 115B, and the third element 115C in the component structure. In a top view such as FIG15A, the outline of element 115 may be the outline of the organic layer 130 that overlaps with the first electrode 120 and the second electrode 140 when viewed from above. When the organic device 100 has an insulating layer 160, the outline of element 115 may be the outline of the organic layer 130 that overlaps with the first electrode 120 and the second electrode 140 when viewed from above but does not overlap with the insulating layer 160.

[0429] The arrangement of the first element 115A, the second element 115B, and the third element 115C is explained. As shown in Figure 15A, the first element 115A, the second element 115B, and the third element 115C can be arranged along the first element direction F1, respectively. The first element 115A, the second element 115B, and the third element 115C can also be arranged along the second element direction F2, respectively.

[0430] If a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is extracted to the outside from the side of the second electrode 140 or the side of the first electrode 120.

[0431] When the organic layer 130 includes a light-emitting layer that emits light when energized, the organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc.

[0432] For example, when the first electrode 120 is the anode, the organic layer 130 may have a hole injection and transport layer between the light-emitting layer and the first electrode 120. The hole injection and transport layer may be a hole injection layer with hole injection function, a hole transport layer with hole transport function, or a layer with both hole injection and hole transport functions. Alternatively, the hole injection and transport layer may be a layer formed by laminating a hole injection layer and a hole transport layer.

[0433] When the second electrode 140 is a cathode, the organic layer 130 may have an electron injection transport layer between the light-emitting layer and the second electrode 140. The electron injection transport layer may be an electron injection layer with electron injection function, an electron transport layer with electron transport function, or a layer with both electron injection and electron transport functions. Alternatively, the electron injection transport layer may be a layer formed by laminating an electron injection layer and an electron transport layer.

[0434] The light-emitting layer contains light-emitting materials. The light-emitting layer may contain additives that improve leveling properties.

[0435] Luminescent materials can be made of known materials, such as pigment-based materials, metal complex-based materials, polymer-based materials, etc.

[0436] There is no particular limitation on the thickness of the light-emitting layer, as long as it provides a recombination site for electrons and holes to exhibit light emission. For example, the thickness of the light-emitting layer can be 1 nm or more. Alternatively, the thickness can be 500 nm or less.

[0437] The second electrode 140 comprises a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 using a vapor deposition method with a mask described later. Materials constituting the second electrode 140 may include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, etc. These conductive materials may be used individually or in combination of two or more. When using two or more materials, a layer composed of each material can be deposited on the conductive material. Alternatively, an alloy containing two or more materials may be used as the conductive material. For example, conductive materials may include magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg, alkali metal alloys, and alkaline earth metal alloys.

[0438] As shown in Figure 15B, the organic device 100 may include a sealing layer (not shown) covering elements on the vapor-deposited substrate 110, such as organic layers 130A, 130B, and 130C. The sealing layer prevents external water vapor or other contaminants from entering the interior of the organic device 100. This prevents the organic layers 130A, 130B, and 130C from deteriorating due to moisture. The sealing layer may, for example, comprise a layer made of an organic material. To suppress light refraction in the sealing layer, the organic material may have a refractive index equal to or close to that of the organic layers 130A, 130B, and 130C. The organic material may, for example, be an inorganic material such as silicon nitride (SiN). In this case, the sealing layer may have a laminated structure formed by layering organic and inorganic materials. A planarization layer (not shown) may be sandwiched between the second electrode 140 and the sealing layer. The planarization layer may be a layer used to improve the adhesion of the sealing layer to the irregularities of elements on the vapor-deposited substrate 110.

[0439] The manufacturing method of such an organic device 100 may include a step of using a vapor deposition mask 10 to attach a vapor deposition material 82 to a vapor deposition substrate 110 to form organic layers 130A, 130B, and 130C. More specifically, the manufacturing method of the organic EL display device of this embodiment may include a vapor deposition mask preparation step, an alignment step, a bonding step, a vapor deposition step, and a cutting step.

[0440] First, as a process for preparing the vapor deposition mask, the aforementioned vapor deposition mask 10 can be prepared.

[0441] After the vapor deposition mask preparation process, as an alignment process, the vapor deposition mask 10 is aligned with the vapor deposition substrate 110. In the alignment process, the position of the through-hole 40 of the vapor deposition mask 10 relative to the vapor deposition substrate 110 is confirmed. At this time, the position of the through-hole 40 of the vapor deposition mask 10 relative to the vapor deposition substrate 110 can be adjusted. For example, the first alignment mark 45 of the substrate frame 17 provided on the mask substrate 15 is aligned with the corresponding substrate alignment mark 111 (see Figure 3) of the vapor deposition substrate 110. Additionally, the second alignment mark 46 of the mask crossbars 28a and 28b provided on the mask layer 20 is aligned with the corresponding alignment mark (not shown) of the vapor deposition substrate 110. For example, firstly, the first alignment mark 45 can be used for approximate alignment of the vapor deposition substrate 110 and the through-hole 40, and then the second alignment mark 46 can be used for fine alignment of the vapor deposition substrate 110 and the through-hole 40. Therefore, the position of the through hole 40 of the vapor deposition mask 10 relative to the vapor deposition substrate 110 can be adjusted with high precision.

[0442] Following the alignment process, as a sealing process, the first surface 20a of the mask layer 20 of the vapor deposition mask 10 is sealed to the vapor deposition substrate 110. More specifically, within the vapor deposition apparatus 80, the first surface 20a of the mask layer 20 of the vapor deposition mask 10 is sealed to the first surface 110a of the vapor deposition substrate 110 (see Figure 3) in an aligned state. At this time, the vapor deposition substrate 110 is positioned between the vapor deposition mask 10 and the magnet 85, and the magnetic force of the magnet 85 attracts the vapor deposition mask 10 to the vapor deposition substrate 110. Thus, the vapor deposition substrate 110 and the first surface 20a of the vapor deposition mask 10 are sealed together.

[0443] Following the sealing process, as a vapor deposition process, the vapor deposition material 82 is deposited onto the first electrode 120 formed on the vapor deposition substrate 110 through the through-holes 40 of the vapor deposition mask 10 to form organic layers 130A, 130B, and 130C (see Figure 15B). The organic layers 130A, 130B, and 130C are formed on the corresponding hole transport layers. More specifically, the internal pressure of the vapor deposition apparatus 80 is reduced to a vacuum atmosphere. Then, the vapor deposition material 82 is evaporated and flies towards the hole transport layer. The flying vapor deposition material 82 adheres to the desired hole transport layer through the through-holes 40 of the vapor deposition mask 10. Thus, organic layers 130A, 130B, and 130C are formed on the first electrode 120 and the insulating layer 160 with a pattern corresponding to the pattern of the through-holes 40.

[0444] Here, organic layers 130A, 130B, and 130C are formed across the first electrode 120 and the insulating layer 160 adjacent to the first electrode 120. Although not shown, adjacent organic layers 130A, 130B, and 130C on the insulating layer 160 may also overlap.

[0445] As described above, in this embodiment, through-holes 40 are arranged in a predetermined pattern in each effective region 23. When displaying multiple colors, a vapor deposition mask 10 is prepared having through-holes 40 formed in patterns corresponding to the organic layers 130A, 130B, and 130C of each color. In each vapor deposition mask 10, vapor deposition material 82 of each color is attached to the corresponding hole transport layer. Thus, for example, organic light-emitting materials for red, green, and blue can be vapor-deposited onto a single vapor deposition substrate 110, and organic layers 130A, 130B, and 130C can be formed respectively.

[0446] After forming organic layers 130A, 130B, and 130C, an electron transport layer and an electron injection layer are formed on organic layers 130A, 130B, and 130C. Then, a second electrode 140 is formed. The second electrode 140 is formed to cover each of the organic layers 130A, 130B, and 130C, and is formed on organic layers 130A, 130B, and 130C such that it spans the first electrode 120 and the insulating layer 160 adjacent to the first electrode 120. For example, the second electrode 140 can be formed continuously, spanning two adjacent organic layers 130A, 130B, and 130C when viewed from above.

[0447] The planarization layer and sealing layer described above are formed on the second electrode 140. In this way, the organic layers 130A, 130B, 130C and other elements disposed on the vapor deposition substrate 110 are sealed by the sealing layer.

[0448] Following the vapor deposition process, as a cutting process, the vapor-deposited substrate 110 is cut for each organic device 100. In this case, for example, a cutting saw is used to cut the vapor-deposited substrate 110 between adjacent organic devices 100. Depending on the distance between adjacent organic devices 100 and the width of the cutting saw, a single cut or a double cut can be used to cut the vapor-deposited substrate 110.

[0449] Thus, an organic device 100 is obtained in which organic layers 130A, 130B, and 130C of various colors are formed on the vapor deposition substrate 110.

[0450] Thus, according to this embodiment, the vapor deposition mask 10 includes a mask layer 20 having through holes 40 and a mask substrate 15 located on the second surface 20b of the mask layer 20. By placing the mask substrate 15 on the mask layer 20 in this way, the strength of the vapor deposition mask 10 can be improved, and it can be tightly bonded to the vapor deposition substrate 110 in this state. As a result, the shape accuracy and position accuracy of the through holes 40 in the mask layer 20 can be maintained at the shape accuracy and position accuracy at the time of forming the through holes 40, and the fineness of the through holes 40 can be improved. High fineness of the through holes 40 can also be achieved. In addition, the vapor deposition material 82 can be attached to the vapor deposition substrate 110 while the shape accuracy and position accuracy of the through holes 40 are improved. Therefore, the fineness of the organic layers 130A, 130B, and 130C of the organic device 100 can be improved. In this case, high fineness of pixels composed of elements including organic layers 130A, 130B, and 130C can also be achieved.

[0451] Furthermore, according to this embodiment, the mask substrate 15 comprises silicon. When the vapor deposition substrate 110 is a silicon substrate, the mask substrate 15 can be constructed from the same material as or the same material as the vapor deposition substrate 110. This reduces the difference in thermal expansion coefficient between the mask substrate 15 and the vapor deposition substrate 110. Therefore, it is possible to suppress the reduction in accuracy. Here, for example, when the pixel density of the organic device 100 is high, it is required to improve the shape accuracy and positional accuracy of the through-hole 40. The mask substrate 15 of this embodiment comprises silicon, thus reducing the difference in thermal expansion coefficient between it and the vapor deposition substrate 110 as described above. Therefore, even when the vapor deposition mask 10, which is precisely aligned with the vapor deposition substrate 110, undergoes thermal expansion, it is possible to suppress the positional displacement of the through-hole 40 relative to the vapor deposition substrate 110. Therefore, it is possible to improve the shape accuracy and positional accuracy of the organic layers 130A, 130B, and 130C formed on the vapor deposition substrate 110. As a result, it is possible to easily fabricate organic devices 100 with highly precise organic layers 130A, 130B, and 130C.

[0452] Furthermore, according to this embodiment, the second surface 20b of the mask layer 20 is attached to the mask substrate 15. This further improves the strength of the vapor deposition mask 10. Here, when the mask layer 20 is fabricated separately from the mask substrate 15, the mask layer 20 is mounted on a frame such as the mask substrate 15 under tension and then fixed by welding or the like. However, in this embodiment, since the mask layer 20 is attached to the mask substrate 15, such mounting is unnecessary. Therefore, the shape and position accuracy of the through-holes 40 of the mask layer 20 attached to the mask substrate 15 can be maintained at the same level as when the through-holes 40 were formed. Thus, the fineness of the through-holes 40 can be further improved.

[0453] Furthermore, according to this embodiment, the mask layer 20 has a first metal layer 21 forming the first surface 20a and a second metal layer 22 located between the first metal layer 21 and the mask substrate 15. Thus, the second metal layer 22 can be configured as a layer with a specific purpose. For example, the second metal layer 22 can be formed of a material capable of ensuring adhesion between the first metal layer 21 and the mask substrate 15. In this case, the vapor deposition mask 10 can be attached to the mask substrate 15, and the strength of the vapor deposition mask 10 can be further improved. Alternatively, the second metal layer 22 can be formed of a material resistant to the etching medium used in the substrate etching process. In this case, during the substrate etching process, the etching of the first metal layer 21 by the etching medium can be suppressed.

[0454] Furthermore, according to this embodiment, the thickness of the second metal layer 22 forming the second surface 20b of the mask layer 20 is less than the thickness of the first metal layer 21 forming the first surface 20a. Therefore, the second metal layer 22 can be configured as a layer with a specific purpose. That is, when the second metal layer 22 is configured as a layer with a specific purpose, the possibility of difficulty in reducing the coefficient of thermal expansion is considered. For example, the purpose of the second metal layer 22 can be to ensure adhesion to the first metal layer 21, to ensure adhesion to the mask substrate 15, to suppress erosion caused by the etching medium used in the substrate etching process, or to protect the substrate side layer 26 from the effects of plating solution containing the material constituting the first metal layer 21. The material used to achieve such purposes is considered to have a large coefficient of thermal expansion. However, even in this case, by reducing the thickness of the second metal layer 22, the effect of thermal expansion of the second metal layer 22 can be suppressed. Therefore, it is possible to suppress the reduction in precision.

[0455] Furthermore, according to this embodiment, the first metal layer 21 comprises a metallic material. Therefore, through-holes 40 can be formed in the mask layer 20 made of metallic material. Thus, when cleaning the vapor deposition mask 10 after the vapor deposition process of forming organic layers 130A, 130B, and 130C on the vapor deposition substrate 110, the absorption of cleaning solution by the layer containing the through-holes 40 can be suppressed. Therefore, misalignment of the through-holes 40 and deformation of the through-holes 40 can be suppressed. As a result, the precision of the through-holes 40 in the cleaned vapor deposition mask 10 can be improved. Additionally, when the first metal layer 21 comprises a magnetic metallic material, the vapor deposition mask 10 can be tightly bonded to the vapor deposition substrate 110 by using a magnet 85. In this case, the vapor deposition mask 10 can be attracted towards the magnet 85 by magnetic force, improving the adhesion between the vapor deposition mask 10 and the vapor deposition substrate 110. Therefore, the precision of the organic layers 130A, 130B, and 130C of the organic device 100 can be improved.

[0456] Furthermore, according to this embodiment, the second metal layer 22 includes: a main body region 22a located between the first metal layer 21 and the substrate frame 17; and an opening region 22b located within the substrate opening 16 when viewed from above. Therefore, in the substrate etching process, the second metal layer 22 can be configured as an etching barrier layer. Additionally, the through-hole 40 penetrates the first metal layer 21 and the opening region 22b. Therefore, it is not necessary to remove the opening region 22b. Furthermore, by including the opening region 22b in the second metal layer 22, the strength of the vapor deposition mask 10 can be improved.

[0457] Furthermore, according to this embodiment, the opening size of the through hole 40 in the second surface 20b in a predetermined direction is larger than the opening size of the through hole 40 in the first surface 20a in the same predetermined direction. Therefore, when the vapor deposition substrate 110 is tightly sealed to the first surface 20a during vapor deposition, the generation of shadows can be suppressed. Thus, the shape and positional accuracy of the organic layers 130A, 130B, and 130C formed from the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, thereby enhancing the precision of the organic device 100.

[0458] Furthermore, according to this embodiment, two or more through-holes 40 are located within the substrate opening 16 of the mask substrate 15. This suppresses shadowing on the mask substrate 15 during vapor deposition. Therefore, the shape and positional accuracy of the organic layers 130A, 130B, and 130C formed from the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, thereby enhancing the precision of the organic device 100. Additionally, according to this embodiment, since the multiple through-hole groups 30 are located within the substrate opening 16, shadowing is further suppressed.

[0459] Furthermore, according to this embodiment, a first alignment mark 45 is provided on the surface of the mask substrate 15 opposite to the mask layer 20. Therefore, during the alignment process of aligning the vapor deposition mask 10 with the vapor deposition substrate 110, the first alignment mark 45 can be used to align the vapor deposition mask 10 with the vapor deposition substrate 110. Since the first alignment mark 45 is provided on the mask substrate 15, the vapor deposition mask 10 can be aligned entirely with the vapor deposition substrate 110.

[0460] Furthermore, according to this embodiment, a second alignment mark 46 is provided at a position closer to the through-hole 40 than the first alignment mark 45. Therefore, during the alignment process of aligning the vapor deposition mask 10 with the vapor deposition substrate 110, the second alignment mark 46 can be used to align the vapor deposition mask 10 and the vapor deposition substrate 110. Moreover, since the second alignment mark 46 is positioned closer to the through-hole 40 than the first alignment mark 45, the alignment accuracy between the vapor deposition mask 10 and the vapor deposition substrate 110 can be improved. Furthermore, by providing the second alignment mark 46 on the first surface 20a of the mask layer 20, the second alignment mark 46 can be visually confirmed via the vapor deposition substrate 110 even when the first metal layer 21 is not transparent.

[0461] Furthermore, according to this embodiment, the second alignment mark 46 is located on the mask crossbars 28a and 28b disposed between adjacent through-hole groups 30. This allows the second alignment mark 46 to be positioned closer to the through-hole 40. Therefore, the alignment accuracy between the vapor deposition mask 10 and the vapor deposition substrate 110 can be further improved. Additionally, according to this embodiment, the second alignment mark 46 is located at the intersection 29 where the first mask crossbar 28a and the second mask crossbar 28b intersect. This allows for efficient alignment of the through-holes 40 in adjacent through-hole groups 30.

[0462] Furthermore, according to this embodiment, the through-hole 40 is formed by irradiating the mask layer 20 with laser L. This improves the shape and positional accuracy of the through-hole 40, thereby enhancing the precision of the vapor deposition mask 10.

[0463] Furthermore, according to this embodiment, after the substrate opening 16 is formed, the laser L irradiates the second surface 20b of the mask layer 20 through the substrate opening 16. This allows the opening size of the through-hole 40 in the second surface 20b in a predetermined direction to be larger than the opening size of the through-hole 40 in the first surface 20a in the same predetermined direction. Therefore, when the vapor deposition substrate 110 is tightly bonded to the first surface 20a during vapor deposition, through-holes 40 capable of suppressing shadow generation can be easily formed. Thus, the shape and positional accuracy of the organic layers 130A, 130B, and 130C formed from the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, thereby enhancing the precision of the organic device 100.

[0464] Furthermore, according to this embodiment, the laser L is a femtosecond laser. This allows for the output of a high-intensity laser to the mask layer 20 with a short pulse width. Consequently, burr formation on the first surface 20a of the mask layer 20 can be suppressed, improving adhesion to the vapor deposition substrate 110. Therefore, the shape and positional accuracy of the organic layers 130A, 130B, and 130C formed from the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, thereby enhancing the precision of the organic device 100.

[0465] Various modifications can be made to the above-described embodiment. Hereinafter, variations will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the description, parts that can be constructed in the same way as those in the above-described embodiment are represented by the same symbols used for the corresponding parts in the above-described embodiment, and repeated descriptions are omitted. Furthermore, where it is clear that the effects obtained in the above-described embodiment can also be obtained in the variations, their descriptions are sometimes omitted as well.

[0466] Next, the first variation will be explained.

[0467] In the above embodiment, an example was described in which the second metal layer 22 includes a main body region 22a located between the first metal layer 21 and the substrate frame 17, and an opening region 22b located within the substrate opening 16 when viewed from above. However, the present invention is not limited thereto.

[0468] For example, as shown in FIG16, the second metal layer 22 may include a main body region 22a and a mask layer opening 22d formed along the substrate opening 16 when viewed from above. The mask layer opening 22d may penetrate the main body side layer 25, the substrate side layer 26, and the intermediate layer 27. The mask layer opening 22d may have the same planar shape as the substrate opening 16. In the example shown in FIG16, the through hole 40 penetrates the first metal layer 21. That is, the through hole 40 extends from the first surface 20a toward the surface of the first metal layer 21 facing the mask substrate 15 and penetrates the first metal layer 21.

[0469] The opening size of the through-hole 40 in a predetermined direction (e.g., first direction D11 or second direction D12) of the surface of the first metal layer 21 facing the mask substrate 15 can be larger than the opening size of the through-hole 40 in the predetermined direction of the first surface 20a. In one embodiment, the cross-sectional opening of the through-hole 40 in a direction parallel to the first surface 20a can gradually increase from the first surface 20a toward the surface of the first metal layer 21 facing the mask substrate 15. In other words, the cross-sectional area of ​​each through-hole 40 in a cross section parallel to the first surface 20a at each location along the normal direction of the mask layer 20 can gradually increase from the first surface 20a toward the surface of the first metal layer 21 facing the mask substrate 15. In this case, the through-hole 40 can have a wall 41 formed away from the central axis CL of the through-hole 40 from the first surface 20a toward the surface of the first metal layer 21 facing the mask substrate 15. Figure 16 shows an example where the wall surface 41 of the through-hole 40 is inclined linearly relative to the central axis CL, such that it is away from the central axis CL from the first surface 20a toward the surface of the first metal layer 21 facing the mask substrate 15. For example, the opening size of the through-hole 40 in the first surface 20a of the mask layer 20 can be represented by the symbol S1 shown in Figure 5A. The opening size of the through-hole 40 in the surface of the first metal layer 21 facing the mask substrate 15 can be represented by the symbol S2 shown in Figure 5A.

[0470] The mask layer opening 22d shown in Figure 16 can be formed in the second metal layer 22 as a mask layer opening formation process after the substrate opening formation process. The mask layer opening 22d can be formed by etching the second metal layer 22. More specifically, by etching the second metal layer 22, the region in the second metal layer 22 corresponding to the substrate opening 16 is removed. In this way, the mask layer opening 22d can be formed. For example, N-methylpyrrolidone (NMP) can be used as the etching solution. The second metal layer 22 can be immersed in the etching solution at, for example, a temperature above room temperature and below 70°C for 20 minutes. N-methylpyrrolidone can be used without dilution of the stock solution. In addition, the body side layer 25, the substrate side layer 26, and the intermediate layer 27 can be removed using different etching solutions.

[0471] After the mask layer opening formation process, a through-hole formation process can be performed. In this case, a mask layer opening 22d is formed in the second metal layer 22. Therefore, the laser L irradiates the surface of the first metal layer 21 facing the mask substrate 15 through the substrate opening 16 and the mask layer opening 22d. As a result, a through-hole 40 penetrating the first metal layer 21 is formed.

[0472] Thus, according to the first modification, by including the mask layer opening 22d in the second metal layer 22, the thickness of the portion of the mask layer 20 in which the through hole 40 is formed can be reduced. Therefore, the generation of shadows can be suppressed.

[0473] Next, the second variation will be explained.

[0474] In the first modified example described above, the through hole 40 was formed by irradiating the first metal layer 21 with laser L. However, the present invention is not limited thereto. For example, the through hole 40 may also be formed when the first metal layer 21 is plated during the first metal layer formation process.

[0475] The method for manufacturing the vapor deposition mask 10 in this modified example can include a substrate preparation step, a mask layer formation step, a substrate opening formation step, and a mask layer opening formation step. In the mask layer formation step, first, a second metal layer formation step is performed, followed by a resist layer formation step, and then a first metal layer formation step. In the first metal layer formation step, a through-hole formation step can be performed. After the first metal layer formation step, a resist layer removal step is performed.

[0476] In the resist layer formation process, as shown in FIG17, a resist layer 55 is formed on the second metal layer 22. The resist layer 55 is formed in a pattern corresponding to the through hole 40.

[0477] More specifically, firstly, a liquid resist is applied to the side of the main body side layer 25 opposite to the mask substrate 15 using a spinner. Then, the liquid resist is heated to dry and cure. This forms a resist layer 55. The resist layer 55 can be integrally formed on the main body side layer 25. The heat treatment of the liquid resist can, for example, be performed at a temperature of 90°C for 90 seconds.

[0478] Next, a photoresist layer 55 is patterned by photolithography, having multiple resist lands 56 formed at positions corresponding to the through-holes 40. For example, if the resist layer 55 is a positive resist, an exposure mask (not shown) is disposed on the resist layer 55 to prevent light from illuminating the portion of the resist layer 55 corresponding to the through-holes 40. Then, the resist layer 55 is exposed through this exposure mask. Exposure can be performed using an i-line step exposure apparatus. The exposure time can be 420 milliseconds. In this case, the amount of light irradiated can be reduced by adjusting the focus during exposure near the periphery of the area being irradiated. Thus, after development, the walls 57 of the resist lands 56 are formed in an inclined manner. As shown in FIG17, the walls 57 of the resist lands 56 can be inclined at an angle θ3 relative to the second surface 20b of the mask layer 20. The angle θ3 of the walls 57 can be the same as the angle θ1 shown in FIG3. That is, the through hole 40 is formed along the wall surface 57. In this case, the wall surface 41 of the through hole 40 is the same as the angle θ1 shown in FIG3. For example, when the angle θ3 is 70°, the angle θ1 of the wall surface 41 can be 70°.

[0479] Next, the exposed resist layer 55 is developed. This removes the exposed portion of the resist layer 55. Therefore, as shown in FIG17, the resist layer 55 is patterned with a plurality of resist bosses 56 disposed at positions corresponding to the through-holes 40.

[0480] After development, the resist layer 55 can be heated. This improves the adhesion of the resist layer 55 to the body side layer 25. The heat treatment of the resist layer 55 can be performed, for example, at a temperature of 110°C for 90 seconds.

[0481] Positive resists, for example, can be iP5700 manufactured by Tokyo Ohka Kogyo Co., Ltd. However, negative resists can also be used as resist layer 55. Alternatively, dry film resists can be adhered to the main body side layer 25 as resist layer 55.

[0482] The thickness H9 of the resist layer 55 can be thicker than the thickness H3 of the first metal layer 21 formed in the subsequent first metal layer formation process.

[0483] The thickness H9 of the resist layer 55 can be, for example, 4.0 μm or more, 4.4 μm or more, 4.8 μm or more, or 5.2 μm or more. By making the thickness H9 4.0 μm or more, a thickness greater than that of the first metal layer 21 can be ensured in the first metal layer formation process, and a through hole 40 penetrating the first metal layer 21 can be formed. Alternatively, the thickness H9 can be, for example, 5.8 μm or less, 6.2 μm or less, 6.6 μm or less, or 7.0 μm or less. By making the thickness H9 7.0 μm or less, availability can be ensured in the case of dry film resist, and efficient formation of the resist layer 55 can be achieved in the case of liquid resist. The range of thickness H9 can also be determined by a first group consisting of 4.0 μm, 4.4 μm, 4.8 μm, and 5.2 μm and / or a second group consisting of 5.8 μm, 6.2 μm, 6.6 μm, and 7.0 μm. The range of thickness H9 can also be determined by a combination of any one of the values ​​included in group 1 above and any one of the values ​​included in group 2 above. The range of thickness H9 can also be determined by a combination of any two of the values ​​included in group 1 above. The range of thickness H9 can also be determined by a combination of any two of the values ​​included in group 2 above. For example, it can be 4.0μm or higher than 7.0μm, 4.0μm or higher than 6.6μm, 4.0μm or higher than 6.2μm, 4.0μm or higher than 5.8μm, 4.0μm or higher than 5.2μm, 4.0μm or higher than 4.8μm, 4.0μm or higher than 4.4μm, 4.4μm or higher than 7.0μm, 4.4μm or higher than 6.6μm, 4.4μm or higher than 6.2μm, 4.4μm or higher than 5.8μm, 4.4μm or higher than 5.2μm, 4.4μm or higher than 4.8μm, and 4.8μm or higher than 7.0μm. It can be 4.8μm or higher than 6.6μm, or 4.8μm or higher than 6.2μm, or 4.8μm or higher than 5.8μm, or 4.8μm or higher than 5.2μm, or 5.2μm or higher than 7.0μm, or 5.2μm or higher than 6.6μm, or 5.2μm or higher than 6.2μm, or 5.2μm or higher than 5.8μm, or 5.8μm or higher than 7.0μm, or 5.8μm or higher than 6.6μm, or 5.8μm or higher than 6.2μm, or 6.2μm or higher than 7.0μm, or 6.2μm or higher than 6.6μm, or 6.6μm or higher than 7.0μm.

[0484] In the first metal layer formation process, as shown in FIG18, the first metal layer 21 is formed on the side of the second metal layer 22 opposite to the mask substrate 15. The first metal layer 21 can be formed by plating in the same manner as the first metal layer formation process shown in FIG8. In this case, since a resist layer 55 is formed on the side of the second metal layer 22 opposite to the mask substrate 15, the components of the plating solution are precipitated in the resist bosses 56 in the main body side layer 25 where the resist layer 55 is not formed. The first metal layer 21 is formed by the components precipitated in this way. Through holes 40 are formed in the first metal layer 21 formed in this way. That is, through holes 40 are formed in the first metal layer formation process. The first metal layer 21 can be annealed as described above.

[0485] In the resist layer removal process, as shown in FIG19, the resist layer 55 is removed. For example, the resist bosses 56 of the resist layer 55 can be removed from the second metal layer 22 by using an alkaline stripping solution. After removing the resist layer 55, the first metal layer 21 can be polished by chemical mechanical polishing as shown in FIG42 (described later). In this case, the uniformity of the thickness H3 of the first metal layer 21 can be improved. Therefore, the accuracy of the opening size S1 of the through hole 40 (refer to FIG5A) can be improved, and the shape accuracy of the through hole 40 can be improved.

[0486] Following the mask layer formation process, as a substrate opening formation process, as shown in FIG20, a substrate opening 16 is formed on the mask substrate 15. The substrate opening formation process shown in FIG20 can be performed in the same manner as the substrate opening formation processes shown in FIGS. 9 to 12.

[0487] Following the substrate opening formation process, as a mask layer opening formation process, as shown in FIG21, a mask layer opening 22d is formed on the second metal layer 22. For example, the portion of the second metal layer 22 located within the substrate opening 16 when viewed from above can be removed by etching. This allows the mask layer opening 22d to be formed. More specifically, the mask layer opening 22d is formed by etching the main body side layer 25, the substrate side layer 26, and the intermediate layer 27. The etchant used in the mask layer opening formation process can be an etchant capable of preventing the first metal layer 21 from being etched and capable of etching the second metal layer 22. Such an etchant can, for example, be a mixed aluminum acid etchant. The main body side layer 25, the substrate side layer 26, and the intermediate layer 27 can, for example, be immersed in a mixed aluminum acid etchant at room temperature. For example, if the thickness of each layer 25 to 27 is 100 nm, each layer 25 to 27 can be immersed in the mixed aluminum acid etchant for 2 minutes. The mixed aluminum acid etchant can be used without dilution. Mixed acid aluminum etching solution, for example, can be the product manufactured by Kanto Chemical Industry Co., Ltd. under the trade name "Mixed Acid Al Etching Solution".

[0488] Thus, the through hole 40 is exposed from the substrate opening 16. This yields the vapor deposition mask 10 of this modified example.

[0489] Thus, according to the second modification, through-holes 40 can be formed regardless of the material type of the first metal layer 21. That is, for example, depending on the material type of the first metal layer 21, such as nickel, laser processing using a laser L can sometimes become difficult. However, by forming a resist layer 55 in a patterned manner corresponding to the through-hole 40, through-holes 40 can be formed in the first metal layer 21 formed by plating. Therefore, through-holes 40 can be formed regardless of the material type of the first metal layer 21.

[0490] Next, the third variation will be explained.

[0491] In the above embodiment, an example was described in which the second metal layer 22 includes a main body side layer 25, a substrate side layer 26, and an intermediate layer 27. However, the present invention is not limited thereto.

[0492] For example, as shown in FIG22A, the second metal layer 22 may include a main body side layer 25 and a substrate side layer 26, but not an intermediate layer 27. The second metal layer 22 may have a two-layer structure. The main body side layer 25 and the substrate side layer 26 may be configured as layers with a specific purpose. In this case, the main body side layer 25 and the substrate side layer 26 may be in direct contact with each other.

[0493] The main body side layer 25 shown in Figure 22A may contain a material that ensures adhesion to the first metal layer 21, such as copper. The substrate side layer 26 may contain a material that ensures adhesion to the mask substrate 15 and suppresses erosion caused by the etching medium used in the substrate etching process, such as a neodymium-containing aluminum alloy. For example, if the substrate side layer 26 is resistant to the plating solution used to form the first metal layer 21, the main body side layer 25 and the substrate side layer 26 may be made of such a material. Alternatively, even if the substrate side layer 26 is not resistant to the plating solution, if it has a thickness that can be retained in the first metal layer formation process, the main body side layer 25 and the substrate side layer 26 may be made of such a material.

[0494] Alternatively, the main body side layer 25 shown in FIG22A may contain a material capable of protecting the substrate side layer 26 from the plating solution used in the first metal layer formation process, such as titanium. The substrate side layer 26 may contain a material capable of ensuring adhesion to the mask substrate 15 and suppressing erosion caused by the etching medium used in the substrate etching process, such as a neodymium-containing aluminum alloy. For example, if the main body side layer 25 can ensure adhesion to the first metal layer 21, then the main body side layer 25 and the substrate side layer 26 may be made of such materials.

[0495] Alternatively, the main body side layer 25 shown in FIG22A may contain a material that ensures adhesion to the first metal layer 21, such as copper. The substrate side layer 26 may contain a material that is resistant to the plating solution used in the first metal forming process, such as titanium. For example, if the substrate side layer 26 is a material that ensures adhesion to the mask substrate 15 and can suppress erosion caused by the etching medium used in the substrate etching process, then the main body side layer 25 and the substrate side layer 26 may be made of such materials.

[0496] Furthermore, as shown in FIG22B, the second metal layer 22 can be composed of a single metal layer. This single metal layer can be composed of a material that provides adhesion to the first metal layer 21, adhesion to the mask substrate 15, resistance to etching media, and resistance to plating solutions. In this case, the second metal layer 22 can be composed of the same material as the aforementioned substrate side layer 26. In other words, the second metal layer 22 can be composed solely of the aforementioned substrate side layer 26. In this case, the substrate side layer 26 is in direct contact with the first metal layer 21 and also in direct contact with the mask substrate 15. By forming the substrate side layer 26 in this case with the desired thickness H10 shown in FIG22B, adhesion to the first metal layer 21, adhesion to the mask substrate 15, and erosion caused by the etching media can be suppressed. If the thickness H10 can be ensured, the substrate side layer 26 can be formed by sputtering or by vapor deposition, as described later.

[0497] In this case, the thickness H10 of the substrate side layer 26 can be, for example, 0.6 μm or more, 0.8 μm or more, 1.0 μm or more, or 1.2 μm or more. By making the thickness H10 0.6 μm or more, erosion caused by the etching medium used in the substrate etching process can be suppressed, and resistance to plating solution can be ensured. Therefore, the main side layer 25 and the intermediate layer 27 can be omitted. In addition, the thickness H10 can be, for example, 1.4 μm or less, 1.6 μm or less, 1.8 μm or less, or 2.0 μm or less. By making the thickness H10 2.0 μm or less, the substrate side layer 26 can be formed efficiently by sputtering. The range of thickness H10 can also be determined by a first group consisting of 0.6 μm, 0.8 μm, 1.0 μm, and 1.2 μm and / or a second group consisting of 1.4 μm, 1.6 μm, 1.8 μm, and 2.0 μm. The range of thickness H10 can also be determined by a combination of any one of the values ​​included in group 1 above and any one of the values ​​included in group 2 above. The range of thickness H10 can also be determined by a combination of any two values ​​included in group 1 above. The range of thickness H10 can also be determined by a combination of any two values ​​included in group 2 above. For example, it can be 0.6μm or higher and 2.0μm or lower, 0.6μm or higher and 1.8μm or lower, 0.6μm or higher and 1.6μm or lower, 0.6μm or higher and 1.4μm or lower, 0.6μm or higher and 1.2μm or lower, 0.6μm or higher and 1.0μm or lower, 0.6μm or higher and 0.8μm or lower, 0.8μm or higher and 2.0μm or lower, 0.8μm or higher and 1.8μm or lower, 0.8μm or higher and 1.6μm or lower, 0.8μm or higher and 1.4μm or lower, 0.8μm or higher and 1.2μm or lower, 0.8μm or higher and 1.0μm or lower, and 1.0μm or higher and 2.0μm or lower. It can be 1.0μm or higher than 1.8μm, 1.0μm or higher than 1.6μm, 1.0μm or higher than 1.4μm, 1.0μm or higher than 1.2μm, 1.2μm or higher than 2.0μm, 1.2μm or higher than 1.8μm, 1.2μm or higher than 1.6μm, 1.2μm or higher than 1.4μm, 1.4μm or higher than 2.0μm, 1.4μm or higher than 1.8μm, 1.4μm or higher than 1.6μm, 1.6μm or higher than 2.0μm, 1.6μm or higher than 1.8μm, or 1.8μm or higher than 2.0μm.

[0498] Next, the fourth variation will be explained.

[0499] In the above embodiment, an example of the second metal layer 22 being formed on the mask substrate 15 by sputtering was described. However, the present invention is not limited thereto, and the main body side layer 25, the substrate side layer 26, and the intermediate layer 27 may also be formed by vapor deposition processes such as physical vapor deposition (PVD) and chemical vapor deposition (CVD).

[0500] Next, the fifth variation will be explained.

[0501] In the above embodiment, an example of performing the through-hole formation process after the substrate opening formation process has been described. However, the present invention is not limited to this, and the through-hole formation process can also be performed before the substrate opening formation process. In this case, the laser L can irradiate the first surface 20a of the mask layer 20. The wall surface 41 of the through-hole 40 can be formed perpendicular to the first surface 20a (the angle θ is 90°). Such a vapor deposition mask 10 can be used in the above-described surface vapor deposition apparatus.

[0502] Next, the sixth variation will be explained.

[0503] Furthermore, in the above embodiment, an example of forming the first metal layer 21 of the mask layer 20 by a plating process has been described. However, the present invention is not limited thereto. For example, the first metal layer 21 may also be formed and attached to the second metal layer 22 by a sputtering process. In this case, a metal layer identical to the substrate side layer 26 described above may be provided as the second metal layer between the first metal layer 21 formed by sputtering and the mask substrate 15.

[0504] Next, the seventh variation will be explained.

[0505] In the above embodiment, an example of forming the through-hole 40 by irradiating the first metal layer 21 and the second metal layer 22 with laser L has been described. However, the present invention is not limited to this, and the through-hole 40 can also be formed by etching the first metal layer 21 and the second metal layer 22. In this case, for example, the area not covered by the patterned resist (not shown) can be etched to form the through-hole 40 penetrating the mask layer 20. In the case of wet etching, the etching solution can be, for example, a liquid containing ferric chloride solution and hydrochloric acid. The temperature of the etching solution is, for example, 25°C or 80°C. In the case of dry etching, the etching gas can be methane gas (CH4) or carbon dioxide gas (CO2).

[0506] Next, the eighth variation will be explained.

[0507] In the above embodiment, an example of a substrate frame 17 of a mask substrate 15 having a first alignment mark 45 for alignment with the vapor-deposited substrate 110 has been described. However, the present invention is not limited thereto. For example, as shown in FIG23, the mask substrate 15 may include an inner protrusion 19 extending inward from the substrate frame 17 when viewed from above, with the first alignment mark 45 located on the inner protrusion 19. The inner protrusion 19 may include a sidewall 19a facing a through-hole group 30 adjacent in the first direction D11, and a sidewall 19b facing a through-hole group 30 adjacent in the second direction D12. Alternatively, when viewed from above, the sidewall 19a may extend along the second direction D12, and the sidewall 19b may extend along the first direction D11. By providing the first alignment mark 45 on the inner protrusion 19, the first alignment mark 45 can be positioned close to the through-hole group 30, thereby improving the alignment accuracy of the through-hole 40.

[0508] Next, the ninth variation will be explained.

[0509] In the above embodiment, an example was described where the second alignment mark 46 for alignment with the vapor-deposited substrate 110 is provided at each intersection 29 where the first mask crossbar 28a and the second mask crossbar 28b intersect in the mask layer 20. However, the present invention is not limited thereto. As shown in FIG. 24, the second alignment mark 46 may not be provided at all intersections 29. For example, the second alignment mark 46 may be arranged in the first direction D11 for every plurality of through-hole groups 30. In FIG. 24, the second alignment mark 46 is arranged in the first direction D11 and the second direction D12 for every two through-hole groups 30, respectively. More specifically, the second alignment mark 46 may be provided on one of two adjacent first mask crossbars 28a in the first direction D11, and the second alignment mark 46 may not be provided on the other. Alternatively, the second alignment mark 46 may be configured on one of the two adjacent second mask crossbars 28b in the second direction D12, while the second alignment mark 46 may not be configured on the other. In this case, the second alignment mark 46 is configured at a position corresponding to the corner of the four through-hole groups 30.

[0510] Although not shown in the figures, the second alignment mark 46 may also be provided on the substrate crossbars 18a and 18b of the mask substrate 15 (described later) instead of the mask layer 20 (see Figures 25 and 26). When the second alignment mark 46 is formed as a concave shape, it can be formed on the second substrate surface 15b within the substrate crossbars 18a and 18b. In this case, the second alignment mark 46 can be visually confirmed through the vapor-deposited substrate 110 and the mask layer 20 by irradiating it with infrared light. When viewed from above, the second alignment mark 46 can be positioned either in the same location as the second alignment mark 46 shown in Figure 3 or in the same location as the second alignment mark 46 shown in Figure 24; it is arbitrary. Such a concave second alignment mark 46 can be formed by etching the second substrate surface 15b on the substrate crossbars 18a and 18b during a substrate etching process.

[0511] Next, the 10th variation will be explained.

[0512] In the above embodiment, an example was described where all through-hole groups 30 are located within one substrate opening 16 of the mask substrate 15. However, the present invention is not limited thereto, and the mask substrate 15 may also have multiple substrate openings 16. For example, as shown in FIGS. 25 and 26, substrate crossbars 18a and 18b may be provided between adjacent substrate openings 16. The substrate crossbars 18a and 18b may include a first substrate crossbar 18a arranged along a first direction D11 and a second substrate crossbar 18b arranged along a second direction D12. The first substrate crossbar 18a may also extend along the second direction D12. The first substrate crossbar 18a may overlap with the first mask crossbar 28a when viewed from above. The second substrate crossbar 18b may also extend along the first direction D11. The second substrate crossbar 18b may overlap with the second mask crossbar 28b when viewed from above. Figure 26 is a schematic diagram showing the CC line cross section of Figure 25. To facilitate understanding of the figure, the number of through hole groups 30 and through holes 40 has been reduced.

[0513] In the examples shown in Figures 25 and 26, a corresponding through-hole group 30 (or effective region 23) is located within each substrate opening 16. The substrate opening 16 shown in Figures 25 and 26 may have a shape that follows the outline of the corresponding through-hole group 30 (or corresponding effective region 23). Substrate crossbars 18a and 18b are connected to the substrate frame 17 and are located between adjacent through-hole groups 30 when viewed from above. Figure 26 shows the first substrate crossbar 18a, which extends in a direction perpendicular to the plane of the paper. The two ends of the first substrate crossbar 18a are continuously connected to the substrate frame 17. Although not shown in Figure 26, the second substrate crossbar 18b extends in the left-right direction in Figure 26. The two ends of the second substrate crossbar 18b are continuously connected to the substrate frame 17. Thus, when viewed from above, a plurality of substrate openings 16 are defined by the first substrate crossbar 18a extending along the second direction D12 and the second substrate crossbar 18b extending along the first direction D11.

[0514] In the example shown in FIG25, the substrate opening 16 has a generally rectangular outline when viewed from above. Here, the four corners of the outline of the substrate opening 16 can be formed by the direct intersection of the side 16f (see FIG27) extending along the first direction D11 and the side 16g extending along the second direction D12. However, there may also be slightly curved outlines formed unintentionally between these sides. However, the present invention is not limited to this.

[0515] For example, as shown in FIG27, the substrate opening 16 may have curved portions 16e at the four corners of the generally rectangular outline of the substrate opening 16 when viewed from above. The curved portions 16e are portions in which the side 16f extending along the first direction D11 and the side 16g extending along the second direction D12 of the outline of the substrate opening 16 are connected in a curved shape. The curved portions 16e may be intentionally formed in a way that constitutes a curved shape. For example, the curved portions 16e may be formed in an arc shape. Such curved portions 16e may be included in the substrate opening 16 shown in FIGS. 29 to 31.

[0516] The radius R of the bent portion 16e shown in Figure 27 can be, for example, 0.3 mm or more, 0.6 mm or more, 0.9 mm or more, or 1.2 mm or more. By making the radius R 0.3 mm or more, stress concentration at the four corners of the substrate opening 16 can be suppressed. Alternatively, the radius R can be, for example, 1.5 mm or less, 2.0 mm or less, 2.5 mm or less, or 3.0 mm or less. By making the radius R 3.0 mm or less, the number of through holes 40 that can be disposed within the substrate opening 16 can be suppressed. The range of radius R can also be determined by a first group consisting of 0.3 mm, 0.6 mm, 0.9 mm, and 1.2 mm and / or a second group consisting of 1.5 mm, 2.0 mm, 2.5 mm, and 3.0 mm. The range of radius R can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of radius R can also be determined by a combination of any two of the values ​​included in the first group. The range of radius R can also be determined by any combination of two values ​​included in group 2 above. For example, it can be 0.3mm to 3.0mm, 0.3mm to 2.5mm, 0.3mm to 2.0mm, 0.3mm to 1.5mm, 0.3mm to 1.2mm, 0.3mm to 0.9mm, 0.3mm to 0.6mm, 0.6mm to 3.0mm, 0.6mm to 2.5mm, 0.6mm to 2.0mm, 0.6mm to 1.5mm, 0.6mm to 1.2mm, 0.6mm to 0.9mm, or 0.9mm to 3.0mm. It can be 0.9mm or more and less than 2.5mm, it can be 0.9mm or more and less than 2.0mm, it can be 0.9mm or more and less than 1.5mm, it can be 0.9mm or more and less than 1.2mm, it can be 1.2mm or more and less than 3.0mm, it can be 1.2mm or more and less than 2.5mm, it can be 1.2mm or more and less than 2.0mm, it can be 1.2mm or more and less than 1.5mm, it can be 1.5mm or more and less than 3.0mm, it can be 1.5mm or more and less than 2.5mm, it can also be 2.5mm or more and less than 3.0mm.

[0517] Additionally, as shown in FIG28, the substrate opening 16 can have a circular outline when viewed from above. In the substrate etching process shown in FIG10, the substrate crossbars 18a and 18b can be formed by leaving the portions of the mask substrate 15 corresponding to the substrate crossbars 18a and 18b un-etched.

[0518] Thus, the mask substrate 15 has a plurality of substrate openings 16, thereby enabling the mask layer 20 to be supported by the material of the mask substrate 15 (substrate crossbars 18a, 18b) remaining between the substrate openings 16. Therefore, the mechanical strength of the vapor deposition mask 10 can be improved.

[0519] Furthermore, when the mask substrate 15 has multiple substrate openings 16, as shown in Figures 25 to 27, it is not limited to one through-hole group 30 located within one substrate opening 16. For example, as shown in Figure 29, two or more through-hole groups 30 (or effective regions 23) may be located within one substrate opening 16. In Figure 29, an example is shown where four through-hole groups 30 are located within one substrate opening 16. Alternatively, it is not limited to all through holes 40 constituting one through-hole group 30 being located within one substrate opening 16. For example, one through-hole group 30 may span two or more substrate openings 16 when viewed from above. For example, as shown in Figure 30, one through hole 40 may be located within one substrate opening 16. In the example shown in Figure 30, each through hole 40 is provided with a substrate opening 16. Furthermore, as shown in Figure 31, two or more through holes 40 may be located within one substrate opening 16. In the example shown in Figure 31, two through holes 40 are located within a substrate opening 16.

[0520] Next, the 11th variation will be explained.

[0521] In the above embodiment, an example of a vapor deposition mask 10 comprising a mask layer 20 and a mask substrate 15 has been described. However, the present invention is not limited thereto. For example, as shown in FIGS. 32 and 33, the mask substrate 15 may also be supported by a frame 201. In this case, a framed vapor deposition mask 200 can be constructed using the vapor deposition mask 10 and the frame 201.

[0522] More specifically, the framed vapor deposition mask 200 includes a vapor deposition mask 10 and a frame 201 that supports the vapor deposition mask 10 on a mask substrate 15. The frame 201 is mounted on the mask substrate 15 of the vapor deposition mask 10 for the purpose of holding it during processing, for example, when moving the vapor deposition mask 10. Therefore, the vapor deposition mask 10 can be processed while holding the frame 201, and damage to the vapor deposition mask 10 can be suppressed. As a result, the operation of the vapor deposition mask 10 can be improved.

[0523] The frame 201 may include a first frame surface 201a and a second frame surface 201b. The first frame surface 201a faces the mask substrate 15 and the second substrate surface 15b of the mask substrate 15. The second frame surface 201b is located on the opposite side to the first frame surface 201a. The first frame surface 201a is connected to the substrate frame 17 of the mask substrate 15. In a top view, the frame 201 does not overlap with the substrate opening 16. In a top view, at least a portion of the frame 201 extends outward beyond the outer edge 15c of the mask substrate 15. This forms a region for holding the frame 201 when processing the vapor deposition mask 10. In the example shown in FIG. 32, the frame 201 extends outward beyond the outer edge 15c of the mask substrate 15 as a whole.

[0524] Frame 201 can be made of glass or metal. Glass materials can be quartz glass, borosilicate glass, alkali-free glass, or soda glass, etc. Metal materials can be Invar alloy, aluminum, or stainless steel such as SUS430 or SUS304. By using such materials for frame 201, the rigidity of frame 201 can be made higher than that of the mask substrate 15. Frame 201 can be made of silicon or resin. The material of frame 201 can be determined by considering the holding force of the operator or robot arm handling the framed vapor deposition mask 200, in a way that gives frame 201 the required rigidity.

[0525] The coefficient of thermal expansion of the frame 201 can be equal to or close to that of the mask substrate 15. This ensures that the elongation of the frame 201 and the mask substrate 15 is similar when the vapor deposition mask 200 with the frame is heated. As a result, breakage of the mask substrate 15 can be suppressed. Furthermore, the positional accuracy of the through-hole 40 can be improved, thus enhancing the vapor deposition accuracy. More specifically, the absolute value of the difference between the coefficient of thermal expansion of the frame 201 and the coefficient of thermal expansion of the mask substrate 15 can be less than 15 ppm / ℃, less than 10 ppm / ℃, or less than 5.0 ppm / ℃. The material of the frame 201 can be a material with high thermal conductivity. In this case, the vapor deposition mask 10 can be cooled efficiently.

[0526] In the illustrated example, the frame 201 is formed in a ring shape. The portion of the frame 201 located outside the outer edge 15c of the mask substrate 15 when viewed from above is formed in a ring shape. This effectively suppresses damage to the substrate frame 17 of the mask substrate 15 during the processing of the vapor deposition mask 10. More specifically, a frame opening 202 is formed in the center of the frame 201, extending from the first frame surface 201a to the second frame surface 201b and penetrating the frame 201. In the illustrated example, the planar shape of the frame opening 202 is similar to the planar shape of the outer edge 15c of the mask substrate 15. When viewed from above, the frame opening 202 overlaps with each substrate opening 16 of the mask substrate 15. In the illustrated example, the mask substrate 15, like the examples shown in Figures 25 and 26, includes the aforementioned first substrate crossbar 18a and second substrate crossbar 18b, with each substrate crossbar 18a, 18b dividing a plurality of substrate openings 16. When viewed from above, the frame opening 202 overlaps with the first substrate crossbar 18a and the second substrate crossbar 18b of the mask substrate 15.

[0527] The planar shape of the outer edge 201c of the frame 201 is arbitrary. In the example shown, when viewed from above, the outer edge 201c of the frame 201 is rectangular, but it can also be formed into other polygonal or circular shapes, etc.

[0528] In the 11th variation described above, an example was given where the mask substrate 15 of the vapor deposition mask 10 shown in Figures 25 and 26 was supported by the frame 201. However, the present invention is not limited thereto. The mask substrate 15 of the vapor deposition mask 10 shown in Figure 3 may be supported by the frame 201, or the mask substrate 15 of the vapor deposition mask 10 shown in another variation may be supported by the frame 201. For example, the second metal layer 22 shown in Figure 33 may not have a mask layer opening 22d, and the second metal layer 22 may include an opening region 22b (see Figure 3).

[0529] Next, the 12th variation will be explained.

[0530] In the above embodiment, an example was described where the outer edge 21c of the first metal layer 21 overlaps with the outer edge 22c of the second metal layer 22 when viewed from above. However, the present invention is not limited to this. For example, as shown in FIG34, the outer edge 21c of the first metal layer 21 may also be located closer to the inside than the outer edge 22c of the second metal layer 22. In other words, the second metal layer 22 extends outward beyond the outer edge 21c of the first metal layer 21 and is exposed. As a result, a height difference can be formed between the first metal layer 21 and the second metal layer 22, and the thickness H3 of the first metal layer 21 can be easily measured (see FIG3). When viewed from above, a portion of the second metal layer 22 may also extend outward beyond the outer edge 21c of the first metal layer 21. In this case, a height difference can be formed on a portion of the outer edge 21c of the first metal layer 21 when viewed from above. However, when viewed from above, the second metal layer 22 may also extend outward entirely beyond the outer edge 21c of the first metal layer 21. In this case, a height difference can be formed throughout the entire circumference of the outer edge 21c of the first metal layer 21 when viewed from above.

[0531] In the first metal layer formation process that forms such a first metal layer 21, a resist layer (not shown) can be pre-formed on the side of the second metal layer 22 opposite to the mask substrate 15. This resist layer is located in a region close to the outer edge 22c of the second metal layer 22. Thus, a first metal layer 21 including the aforementioned outer edge 21c can be formed.

[0532] In this way, by positioning the outer edge 21c of the first metal layer 21 closer to the inside than the outer edge 22c of the second metal layer 22, the thickness H3 of the first metal layer 21 can be easily measured.

[0533] In the 12th variation described above, an example was given of a vapor deposition mask 10 in FIG. 25 and FIG. 26 where the outer edge 21c of the first metal layer 21 was located closer to the inner side than the outer edge 22c of the second metal layer 22. However, the present invention is not limited thereto. For example, the outer edge 21c of the first metal layer 21 of the vapor deposition mask 10 shown in FIG. 3 may be located closer to the inner side than the outer edge 22c of the second metal layer 22, and another variation of the vapor deposition mask 10 may show the outer edge 21c of the first metal layer 21 located closer to the inner side than the outer edge 22c of the second metal layer 22. For example, the second metal layer 22 shown in FIG. 34 may not have a mask layer opening 22d, and the second metal layer 22 may include an opening region 22b (see FIG. 3).

[0534] Next, the 13th variation will be explained.

[0535] In the above embodiment, an example was described in which mask crossbars 28a and 28b, on the first substrate crossbar 18a and the second substrate crossbar 18b of the mask substrate 15, have a first metal layer 21 formed thereon. However, the present invention is not limited thereto. For example, as shown in FIGS. 35 and 36, metal trenches 210a and 210b may also be formed on the mask crossbars 28a and 28b of the first metal layer 21. The metal trenches 210a and 210b may penetrate through the first metal layer 21. The metal trenches 210a and 210b may also not be formed on the second metal layer 22.

[0536] As shown in Figures 35 and 36, a plurality of first metal trenches 210a and a plurality of second metal trenches 210b can be formed in the first metal layer 21. The first metal trenches 210a can be formed on the first mask crossbar 28a, or, when viewed from above, can be located at a position overlapping with the first substrate crossbar 18a. The first metal trenches 210a can extend along the second direction D12, or can be arranged along the first direction D11. The second metal trenches 210b can be formed on the second mask crossbar 28b, or, when viewed from above, can be located at a position overlapping with the second substrate crossbar 18b. The second metal trenches 210b can extend along the first direction D11, or can be arranged along the second direction D12.

[0537] In the examples shown in Figures 35 and 36, the first metal layer 21 may contain multiple metal islands 211. Each metal island 211 is an example of a main island. The metal islands 211 may be divided by a first metal groove 210a and a second metal groove 210b. The metal islands 211 may be formed for each through-hole group 30 (or effective region 23). One through-hole group 30 may be formed on one metal island 211. Alternatively, two or more through-hole groups 30 may be located on one metal island 211. The metal islands 211 may be rectangular in top view. In the example shown in Figure 35, multiple metal islands 211 are formed on the second metal layer 22. The first metal layer 21 may not be formed further outward from the outermost metal island 211 in top view. In this case, the second metal layer 22 is exposed, and the first metal layer 21 and the second metal layer 22 form the same height difference as in Figure 34.

[0538] Metal trenches 210a and 210b can be formed by etching the first metal layer 21. Alternatively, metal trenches 210a and 210b can be formed by irradiating the first metal layer 21 with a laser.

[0539] In this way, by forming metal trenches 210a and 210b in the first metal layer 21, the first metal layer 21 can be segmented. Therefore, warpage generated in the first metal layer 21 can be segmented, and warpage of the vapor deposition mask 10 can be suppressed.

[0540] In the 13th variation described above, an example of forming metal trenches 210a and 210b in the first metal layer 21 of the vapor deposition mask 10 shown in Figures 25 and 26 was described. However, the present invention is not limited thereto. For example, metal trenches 210a and 210b may be formed in the first metal layer 21 of the vapor deposition mask 10 shown in Figure 3, or in the first metal layer 21 of the vapor deposition mask 10 shown in another variation. For example, the second metal layer 22 shown in Figure 36 may not have a mask layer opening 22d, and the second metal layer 22 may include an opening region 22b (see Figure 3).

[0541] Next, the 14th variation will be explained.

[0542] In the 13th variation described above, an example in which metal grooves 210a and 210b are formed in the first metal layer 21 was illustrated. However, the present invention is not limited thereto. For example, as shown in Figures 37 and 38, a mask insulating layer 220 may be formed in the metal grooves 210a and 210b.

[0543] More specifically, the mask layer 20 of the vapor deposition mask 10 shown in Figures 37 and 38 may include a mask insulating layer 220. The mask insulating layer 220 is located on the first surface 20a side of the mask layer 20. The mask insulating layer 220 may be a layer constituting the first surface 20a. The mask insulating layer 220 may be located between two adjacent metal islands 211. In other words, the mask insulating layer 220 may be located between two adjacent through-hole groups 30 (or effective regions 23). The mask insulating layer 220 may penetrate the first metal layer 21.

[0544] More specifically, the mask insulating layer 220 is formed within each of the first metal trenches 210a and each of the second metal trenches 210b of the first metal layer 21. In other words, the mask insulating layer 220 is formed between the two adjacent metal islands 211. The mask insulating layer 220 is also formed further outward from the outermost metal island 211 in a top view. Thus, the mask insulating layer 220 is formed around the metal islands 211. The mask insulating layer 220 can be formed continuously without being segmented.

[0545] The thickness H11 of the mask insulating layer 220 can be the same as the thickness H3 of the first metal layer 21 (see Figure 3), and the difference between the thickness H11 and the thickness H3 can be less than 1.0 μm.

[0546] The mask insulating layer 220 may have different properties from the first metal layer 21 in terms of stress. For example, when the first metal layer 21 applies tensile stress to the mask substrate 15, the mask insulating layer 220 may be configured to apply compressive stress to the mask substrate 15. In this case, the mask insulating layer 220 can at least partially eliminate the force exerted by the first metal layer 21 on the mask substrate 15. Therefore, warping of the vapor deposition mask 10 can be suppressed. The material of the mask insulating layer 220 may be insulating. For example, the mask insulating layer 220 may contain an insulating oxide. The oxide may be, for example, silicon oxide or silicon dioxide.

[0547] Next, the manufacturing method of the vapor deposition mask 10 shown in Figures 37 and 38 will be described.

[0548] First, a mask substrate 15 is prepared to form a second metal layer 22 by means of the second metal layer forming process shown in FIG7 above.

[0549] Next, as shown in FIG39, as an insulating layer forming process, a mask insulating layer 220 is formed on the second metal layer 22. The mask insulating layer 220 can be formed on the entire surface of the second metal layer 22 opposite to the mask substrate 15. The mask insulating layer 220 can be formed by chemical vapor deposition. For example, the mask insulating layer 220 is formed by chemical vapor deposition using tetraethyl orthosilicate (Si(OC2H5)4) as a raw material. Tetraethyl orthosilicate is also known as TEOS.

[0550] Following the insulating layer formation process, as an insulating opening formation process, as shown in FIG40, a plurality of insulating openings 221 are formed in the mask insulating layer 220. The plurality of insulating openings 221 can be arranged in the first direction D11 and the second direction D12. When viewed from above, the plurality of insulating openings 221 have an outline corresponding to the metal islands 211 of the first metal layer 21 described above. The planar shape of the outline of the insulating opening 221 can be rectangular. Although not shown, the four corners of the outline of the insulating opening 221 can be curved. The outline of the insulating opening 221 can also be circular or other shapes. The outline of the insulating opening 221 can be configured to surround the substrate opening 16 formed in a subsequent process. The planar shape of the outline of the insulating opening 221 can be similar to the planar shape of the outline of the substrate opening 16.

[0551] The mask insulating layer 220 may include: an insulating frame 222 having a planar shape along the outer edge 220c of the mask insulating layer 220; and insulating crossbars 223a, 223b defining the outline of the insulating opening 221. The insulating frame 222 is an example of an insulating body. The insulating opening 221 may be defined on the inner side of the insulating frame 222.

[0552] Insulating crossbars 223a and 223b may include a first insulating crossbar 223a arranged in the first direction D11 and a second insulating crossbar 223b arranged in the second direction D12. The first insulating crossbar 223a may extend along the second direction D12. The first insulating crossbar 223a may overlap with the first substrate crossbar 18a when viewed from above. The second insulating crossbar 223b may extend along the first direction D11. The second insulating crossbar 223b may overlap with the second substrate crossbar 18b when viewed from above. The insulating crossbars 223a and 223b may penetrate the first metal layer 21.

[0553] Insulating crossbars 223a and 223b are connected to the insulating frame 222. In a top view, the insulating crossbars 223a and 223b are located between adjacent insulating openings 221. Figure 38 shows the first insulating crossbar 223a, which extends in a direction perpendicular to the plane of the paper. Both ends of the first insulating crossbar 223a are continuously connected to the insulating frame 222. Although not shown in Figure 38, a second insulating crossbar 223b extends in the left-right direction of Figure 38. Both ends of the second insulating crossbar 223b are continuously connected to the insulating frame 222. Thus, in a top view, a plurality of insulating openings 221 are defined by the first insulating crossbar 223a extending along the second direction D12 and the second insulating crossbar 223b extending along the first direction D11.

[0554] As shown in Figure 40, the mask insulating layer 220 may include a plurality of insulating islands 224 located within the insulating openings 221. The aforementioned through-holes 40 of the mask layer 20 are formed at the locations of the insulating islands 224. The method for forming the insulating openings 221 in the mask insulating layer 220 is not particularly limited. For example, the insulating openings 221 may also be formed by using dry etching with an etching gas. The dry etching may be reactive ion etching.

[0555] Following the insulating layer formation process, as a first metal layer formation process, as shown in FIG41, the first metal layer 21 is formed in the insulating opening 221. More specifically, the first metal layer 21 is formed on the side of the second metal layer 22 opposite to the mask substrate 15. The first metal layer 21 can be formed by plating in the same manner as the first metal layer formation process shown in FIG8 and FIG18. In this case, the components of the plating solution are precipitated in the portion of the insulating opening 221 of the mask insulating layer 220 where the insulating islands 224 are not formed. Through the components precipitated in this way, metal islands 211 of the first metal layer 21 are formed on the second metal layer 22. Through holes 40 are formed in the metal islands 211 formed in this way, corresponding to the insulating islands 224. That is, through holes 40 are formed in the first metal layer formation process. The metal islands 211 of the first metal layer 21 can protrude upward from the insulating opening 221 in the thickness direction D2 of the mask layer 20.

[0556] After the first metal layer 21 is formed, the first metal layer 21 can be annealed in the same way as the first metal layer formation process shown in FIG8.

[0557] Following the formation of the first metal layer, as a polishing process, as shown in FIG42, the first metal layer 21 can be polished by chemical mechanical polishing. The polishing process can be performed until the polishing surface of the polishing tool reaches the side of the mask insulating layer 220 opposite to the second metal layer 22 in the thickness direction D2. Thus, the side of the first metal layer 21 opposite to the second metal layer 22 can be located in the same plane as the side of the mask insulating layer 220 opposite to the second metal layer 22. This improves the uniformity of the thickness H3 of the first metal layer 21 and the flatness of the first surface 20a of the mask layer 20.

[0558] Following the grinding process, a portion of the mask insulating layer 220 is removed as an insulating layer removal process. During the insulating layer removal process, as a first mask protective layer formation process, as shown in FIG43, a first mask protective layer 225 covering the insulating frame 222 and insulating crossbars 223a, 223b of the mask insulating layer 220 can be formed. The first mask protective layer 225 may not cover the insulating islands 224. The first mask protective layer 225 may not cover the first metal layer 21 surrounding the plurality of insulating islands 224.

[0559] The first mask protective layer 225 may be resistant to the etching solution used to remove the mask insulating layer 220. For example, if the etching solution contains buffered hydrofluoric acid, the first mask protective layer 225 may contain a resin resistant to hydrofluoric acid. For example, the first mask protective layer 225 may contain a photoresist resistant to hydrofluoric acid. The photoresist may contain polyimide, etc. The buffered hydrofluoric acid solution may be a solution containing hydrofluoric acid and ammonium fluoride.

[0560] Next, in the insulation layer removal process, the mask insulation layer 220 is immersed in an etching solution such as a buffered hydrofluoric acid solution. As a result, as shown in FIG44, the plurality of insulating islands 224 not covered by the first mask protective layer 225 are removed. Afterwards, the first mask protective layer 225 can be removed.

[0561] After the insulating layer removal process, as a substrate opening formation process, a substrate opening 16 is formed on the mask substrate 15. In the substrate opening formation process, as shown in FIG45, a resist layer 50 can be formed on the second substrate surface 15b of the mask substrate 15, similar to the resist layer formation process shown in FIG9. As shown in FIG45, as a second mask protective layer formation process, a second mask protective layer 226 covering the first metal layer 21 and the mask insulating layer 220 can be formed.

[0562] Next, as a substrate opening formation process, as shown in FIG46, the mask substrate 15 can be etched in the same way as the substrate etching process shown in FIG10 to form the substrate opening 16.

[0563] Following the substrate opening formation process, as a mask layer opening formation process, as shown in FIG47, a mask layer opening 22d is formed on the second metal layer 22. In the mask layer opening formation process, the second metal layer 22 can be etched in the same manner as the mask layer opening formation process shown in FIG21 to form the mask layer opening 22d.

[0564] After the mask layer opening formation process, as a second protective layer removal process, as shown in Figure 48, the resist layer 50 and the second mask protective layer 226 can be removed.

[0565] Thus, the vapor deposition mask 10 shown in Figures 37 and 38 is obtained.

[0566] The first metal layer 21 is sometimes formed on the mask substrate 15 at a temperature higher than room temperature. For example, a plating process or an annealing process is performed at a temperature higher than room temperature. If the temperature of the mask substrate 15 and the first metal layer 21 drops to room temperature, the mask substrate 15 and the first metal layer 21 shrink. If the coefficient of thermal expansion of the first metal layer 21 is greater than that of the mask substrate 15, the shrinkage of the first metal layer 21 is greater than that of the mask substrate 15. Therefore, the first metal layer 21 applies tensile stress to the mask substrate 15.

[0567] The mask insulating layer 220 is formed on the mask substrate 15 at a temperature higher than room temperature. For example, a chemical vapor deposition process is performed at a temperature higher than room temperature. If the temperature of the mask substrate 15 and the mask insulating layer 220 drops to room temperature, the mask substrate 15 and the mask insulating layer 220 shrink. When the coefficient of thermal expansion of the mask insulating layer 220 is less than that of the mask substrate 15, the shrinkage of the mask insulating layer 220 is less than that of the mask substrate 15. Therefore, the mask insulating layer 220 applies compressive stress to the mask substrate 15.

[0568] In the vapor deposition mask 10 shown in Figures 37 and 38, a first metal layer 21 and a mask insulating layer 220 are formed on the mask substrate 15. Therefore, the compressive stress exerted by the mask insulating layer 220 on the mask substrate 15 can at least partially eliminate the tensile stress exerted by the first metal layer 21 on the mask substrate 15. As a result, warping of the vapor deposition mask 10 can be suppressed.

[0569] In the first metal layer formation process shown in Figure 41 above, the first metal layer 21 can be formed by a process other than plating. For example, the first metal layer 21 can be formed by a physical film deposition method. Physical film deposition methods can include sputtering, vapor deposition, ion plating, etc. In the physical film deposition process, the first metal layer 21 can be formed not only on the insulating opening 221, but also on the insulating frame 222 and the insulating crossbars 223a and 223b of the mask insulating layer 220.

[0570] Alternatively, an oxide film can be formed on the first substrate surface 15a and the second substrate surface 15b of the mask substrate 15 prepared before the insulating layer formation process shown in FIG. 39. The oxide film can be formed by performing a thermal oxidation process on the mask substrate 15. The thermal oxidation process refers to the process of oxidizing the first substrate surface 15a and the second substrate surface 15b of the mask substrate 15 by heating the mask substrate 15. The oxide film formed on the second substrate surface 15b can be removed after the first metal layer formation process.

[0571] Next, the 15th variation will be explained.

[0572] In the 14th variation described above, an example was given in which the mask insulating layer 220 includes the first insulating crossbar 223a and the second insulating crossbar 223b. However, the present invention is not limited thereto. For example, as shown in FIG49, the mask insulating layer 220 may not include the first insulating crossbar 223a and the second insulating crossbar 223b. The mask insulating layer 220 may or may not include the insulating frame 222, or it may include the insulating frame 222.

[0573] More specifically, as shown in FIG49, through-holes 42 are formed on the substrate crossbars 18a and 18b of the mask substrate 15 in the first metal layer 21. The through-holes 42 are designed not to overlap with the substrate openings 16 of the mask substrate 15 when viewed from above. The through-holes 42 can be located between two adjacent through-hole groups 30 (or effective regions 23). The through-holes 42 can be configured in the same way as the through-holes 40. The through-holes 42 can penetrate the first metal layer 21.

[0574] The mask insulating layer 220 may include a plurality of insulating crossbar islands 227 located within the corresponding crossbar through-holes 42. The insulating crossbar islands 227 may be embedded in the crossbar through-holes 42. The insulating crossbar islands 227 may be located between two adjacent metal islands 211. The insulating crossbar islands 227 may penetrate the first metal layer 21.

[0575] In the insulating layer formation process shown in FIG40, insulating crossbar islands 227 are formed at positions corresponding to the substrate crossbars 18a and 18b of the mask substrate 15. The insulating crossbar islands 227 may have the same shape as the insulating islands 224 described above. In the first mask protection layer formation process shown in FIG43, a first mask protection layer 225 is formed on the insulating crossbar islands 227. Then, by performing the processes shown in FIGS. 44 to 48, a vapor deposition mask 10 with the insulating crossbar islands 227 formed on the substrate crossbars 18a and 18b is obtained.

[0576] In this modified example, through-holes 42 are formed on the substrate crossbars 18a and 18b of the mask substrate 15 in the first metal layer 21. This allows the region between two adjacent through-hole groups 30 in the first metal layer 21 to be formed in the same manner as the structure of the first metal layer 21 within the through-hole group 30 (or effective region 23). Therefore, the uniformity of the structure of the first metal layer 21 can be improved. As a result, the uniformity of the plated power supply current can be improved, and the uniformity of the thickness H3 of the first metal layer 21 can be improved. In the above-described polishing process, the uniformity of the chemical mechanical polishing of the first metal layer 21 can be improved.

[0577] Next, the 16th variation will be explained.

[0578] In the 14th variation described above, an example was given in which the first metal layer 21 includes a plurality of metal islands 211. However, the present invention is not limited thereto. For example, as shown in Figures 50 and 51, the first metal layer 21 may also include dummy metal islands 230.

[0579] More specifically, in the examples shown in Figures 50 and 51, the first metal layer 21 includes a plurality of metal islands 211 and a plurality of dummy metal islands 230. Through-holes 40 located on the metal islands 211 overlap with substrate openings 16. The dummy metal islands 230 are examples of dummy main islands. In top view, the dummy metal islands 230 are located between the metal islands 211 and the outer edge 15c of the mask substrate 15. The dummy metal islands 230 can be located in a position that does not overlap with the substrate openings 16 of the mask substrate 15 in top view. The dummy metal islands 230 can overlap with the substrate frame 17 of the mask substrate 15.

[0580] A virtual through-hole 43 can be formed in the virtual metal island 230, which penetrates the first metal layer 21. When viewed from above, the virtual through-hole 43 may not overlap with the substrate opening 16 of the mask substrate 15, or it may overlap with the substrate frame 17.

[0581] The dummy metal island 230 can be separated from the adjacent metal island 211 when viewed from above. The mask insulating layer 220 can be located between the dummy metal island 230 and the metal island 211. However, the dummy metal islands 230 and the metal island 211 that are adjacent to each other can be connected or formed continuously.

[0582] As shown in Figure 42, in the case of grinding the first metal layer 21 by chemical mechanical polishing, the thickness H3 of the first metal layer 21 after polishing sometimes varies depending on its location. For example, when multiple metal islands 211 are formed on the mask substrate 15, the thickness of the metal islands 211 near the outer edge 15c of the mask substrate 15 can be greater than the thickness of the metal islands 211 near the center point of the mask substrate 15. In other words, the metal islands 211 near the outer edge 15c of the mask substrate 15 are sometimes not sufficiently polished.

[0583] In this modified example, the dummy metal island 230 is located further outward than the metal island 211 when viewed from above. Therefore, areas that are not sufficiently polished are more likely to occur in the dummy metal island 230 compared to the metal island 211. Thus, according to this modified example, insufficient polishing of the metal island 211 can be prevented. Furthermore, in the first metal layer formation process described above, the first metal layer 21 can also be formed in the area of ​​the mask substrate 15 overlapping with the substrate frame 17. Therefore, the first metal layer 21 can be formed over a wider area on the surface of the second metal layer 22 opposite to the mask substrate 15. In this case, the uniformity of the plating current and the uniformity of the thickness H3 of the first metal layer 21 can be improved. In the polishing process described above, the uniformity of the chemical mechanical polishing of the first metal layer 21 can be improved.

[0584] Several variations of the above-described embodiments have been described, but of course, multiple variations can be combined appropriately for application.

Claims

1. A vapor deposition mask comprising: a mask substrate comprising silicon; a mask layer having a first surface and a second surface located opposite to the first surface and facing the mask substrate; and a through-hole penetrating the mask layer, the mask substrate having a substrate opening, wherein, in plan view, the through-hole is located within the substrate opening, the mask layer comprising: a mask body layer forming the first surface; and a mask intermediate layer located between the mask body layer and the mask substrate, the mask body layer comprising a metallic material, wherein, in plan view, the outer edge of the mask body layer is located closer to the inside than the outer edge of the mask intermediate layer.

2. The vapor deposition mask as described in claim 1, wherein, The thickness of the intermediate layer of the mask is less than the thickness of the main body layer of the mask.

3. The vapor deposition mask as described in claim 1 or 2, wherein, The mask intermediate layer includes a substrate side layer, which contains gold, aluminum, chromium, nickel, titanium, titanium nitride, neodymium-containing aluminum alloy, silicon monoxide, or silicon dioxide. The substrate side layer is in contact with the mask body layer and the mask substrate.

4. The vapor deposition mask as described in claim 1 or 2, wherein, The mask intermediate layer includes a main side layer facing the main mask layer and a substrate side layer facing the mask substrate, wherein the main side layer and the substrate side layer are made of different metal materials.

5. The vapor deposition mask as described in claim 4, wherein, The side layer of the substrate comprises gold, aluminum, chromium, nickel, titanium, titanium nitride, neodymium-containing aluminum alloy, silicon monoxide, or silicon dioxide.

6. The vapor deposition mask as described in claim 4, wherein, The main body side layer contains titanium, copper, nickel, or gold.

7. The vapor deposition mask as described in claim 4, wherein, The mask intermediate layer includes an intermediate layer located between the substrate side layer and the main body side layer, the intermediate layer being made of a different metallic material than the main body side layer and the substrate side layer.

8. The vapor deposition mask as described in claim 7, wherein, The intermediate layer comprises titanium, titanium nitride, aluminum, neodymium-containing aluminum alloy, silicon monoxide, silicon dioxide, nickel, copper, chromium, or gold.

9. The vapor deposition mask as described in claim 1 or 2, wherein, The metal material of the mask body layer is a magnetic metal material.

10. The vapor deposition mask as described in claim 1 or 2, wherein, The mask substrate has a substrate body that defines the opening of the substrate, and the mask intermediate layer includes: a main body region located between the mask main body layer and the substrate body; and an opening region located within the substrate opening when viewed from above, and the through hole penetrates the mask main body layer and the opening region.

11. The vapor deposition mask as claimed in claim 10, wherein, The opening size of the through hole in the second face in a specified direction is larger than the opening size of the through hole in the first face in the specified direction.

12. The vapor deposition mask as described in claim 1 or 2, wherein, The mask substrate has a substrate body defining the substrate opening, and the mask intermediate layer includes: a main body region located between the mask main body layer and the substrate body; and a mask layer opening formed along the substrate opening when viewed from above, and the through hole penetrating the mask main body layer.

13. The vapor deposition mask as described in claim 12, wherein, The opening size of the through hole in the face of the mask body layer facing the mask substrate in a predetermined direction is larger than the opening size of the through hole in the first face in the predetermined direction.

14. The vapor deposition mask as described in claim 1 or 2, wherein, The mask layer has two or more through holes, which are located within the opening of the substrate when viewed from above.

15. The vapor deposition mask as described in claim 14, wherein, The mask layer has two or more through-hole groups consisting of two or more of the aforementioned through holes, and when viewed from above, the two or more through-hole groups are located within the opening of the substrate.

16. The vapor deposition mask as claimed in claim 14, wherein, The mask substrate has two or more substrate openings, and the mask layer has two or more through-hole groups composed of two or more through holes. When viewed from above, the two or more through-hole groups are located within each of the substrate openings.

17. The vapor deposition mask as claimed in claim 14, wherein, The mask substrate has two or more substrate openings, and the mask layer has two or more through-hole groups composed of two or more through holes. When viewed from above, one of the through-hole groups is located within each of the substrate openings.

18. The vapor deposition mask as described in claim 1 or 2, wherein, The substrate opening is rectangular when viewed from above, and curved portions are provided at the four corners of the outline of the substrate opening when viewed from above.

19. The vapor deposition mask as described in claim 1 or 2, wherein, A first alignment mark is provided on the surface of the mask substrate opposite to the mask layer.

20. The vapor deposition mask as claimed in claim 19, wherein, The mask substrate has: a substrate body that defines the substrate opening; and an inner protrusion that protrudes inward from the substrate body when viewed from above, wherein the first alignment mark is located on the inner protrusion.

21. The vapor deposition mask as claimed in claim 19, wherein, A second alignment mark is provided at a position closer to the through hole than the first alignment mark.

22. The vapor deposition mask as claimed in claim 21, wherein, The mask layer has: two or more through holes; two or more through hole groups consisting of two or more through holes; and mask crossbars disposed between adjacent through hole groups, wherein the second alignment mark is located on the mask crossbars.

23. The vapor deposition mask as described in claim 22, wherein, The mask crossbars include a first mask crossbar and a second mask crossbar extending in mutually orthogonal directions when viewed from above, and the second alignment mark is located at the intersection of the first mask crossbar and the second mask crossbar.

24. The vapor deposition mask as described in claim 1 or 2, wherein, The mask body layer comprises two or more body islands, and the slots penetrating the mask body layer are located between two adjacent body islands.

25. The vapor deposition mask as described in claim 1 or 2, wherein, The mask layer has a mask insulating layer forming the first surface, and the mask body layer comprises two or more body islands, with the mask insulating layer located between two adjacent body islands.

26. The vapor deposition mask as claimed in claim 14, wherein, The mask layer has two or more through-hole groups consisting of two or more through-holes, and the mask layer has a mask insulating layer forming the first surface, the mask insulating layer being located between two adjacent through-hole groups.

27. The vapor deposition mask as described in claim 1 or 2, wherein, The mask body layer includes a dummy body island, which is located in a position that does not overlap with the opening of the substrate when viewed from above.

28. A framed vapor deposition mask comprising: the vapor deposition mask of claim 1 or 2; and a frame supporting the mask substrate of the vapor deposition mask.

29. A method for manufacturing a vapor deposition mask, comprising: a substrate preparation step of preparing a mask substrate comprising silicon; a mask layer formation step of forming a mask layer on the mask substrate, the mask layer having a first surface and a second surface located opposite to the first surface and facing the mask substrate; a substrate opening formation step of forming a substrate opening on the mask substrate; and a through-hole formation step of forming a through-hole penetrating the mask layer, wherein, in plan view, the through-hole is located within the substrate opening, the mask layer formation step comprising: a mask intermediate layer formation step of forming a mask intermediate layer on the surface of the mask substrate facing the mask layer; and a mask body layer formation step of forming a mask body layer on the surface of the mask intermediate layer opposite to the mask substrate, the mask body layer comprising a metallic material, wherein, in plan view, the outer edge of the mask body layer is located closer to the inner side than the outer edge of the mask intermediate layer.

30. The method for manufacturing a vapor deposition mask as described in claim 29, wherein, In the through-hole forming process, the through-hole is formed by irradiating the mask layer with a laser.

31. The method for manufacturing a vapor deposition mask as described in claim 30, wherein, The through-hole forming process is performed after the substrate opening forming process, and the laser irradiates the second surface of the mask layer through the substrate opening.

32. The method for manufacturing a vapor deposition mask as described in claim 30 or 31, wherein, The laser in question is a femtosecond laser.

33. The method for manufacturing a vapor deposition mask as described in claim 30 or 31, wherein, In the through-hole forming process, the laser irradiates the mask layer through the mask hole corresponding to the through-hole of the photomask.

34. The method for manufacturing a vapor deposition mask as described in claim 33, wherein, The photomask has a plurality of the aforementioned mask holes. In the through-hole forming process, the laser irradiates the mask layer through the plurality of the aforementioned mask holes of the photomask.

35. The method for manufacturing a vapor deposition mask as described in claim 29 or 30, wherein, The mask substrate has a substrate body that defines the opening of the substrate. The mask intermediate layer includes: a main body region located between the mask main body layer and the substrate body; and an opening region located within the substrate opening when viewed from above. In the through-hole forming process, the through-hole is formed in such a way that it penetrates the mask main body layer and the opening region.

36. The method for manufacturing a vapor deposition mask as described in claim 35, wherein, The opening size of the through hole in the second face in a specified direction is larger than the opening size of the through hole in the first face in the specified direction.

37. The method for manufacturing a vapor deposition mask as described in claim 29 or 30, wherein, After the substrate opening formation process, a mask layer opening formation process is provided: a mask layer opening is formed in the intermediate layer of the mask along the substrate opening when viewed from above, and in the through-hole formation process, the through-hole is formed in such a way that it penetrates the mask body layer.

38. The method for manufacturing a vapor deposition mask as described in claim 37, wherein, The opening size of the through hole in the face of the mask body layer facing the mask substrate in a predetermined direction is larger than the opening size of the through hole in the first face in the predetermined direction.

39. A method for manufacturing a vapor deposition mask, comprising: a substrate preparation step of preparing a mask substrate comprising silicon; a mask layer formation step of forming a mask layer on the mask substrate, the mask layer having a first surface and a second surface located opposite to the first surface and facing the mask substrate; a substrate opening formation step of forming a substrate opening on the mask substrate; and a mask layer opening formation step of forming a mask layer opening on the mask layer along the substrate opening when viewed from above, the mask layer formation step comprising: a mask intermediate layer formation step of forming a mask intermediate layer on the mask substrate... A mask intermediate layer is formed on the surface of the substrate facing the mask layer; and a mask body layer forming process is performed in which a mask body layer is formed on the surface of the mask intermediate layer opposite to the mask substrate, and a through hole is formed through the mask body layer. In the mask layer opening forming process, the mask layer opening is formed in the mask intermediate layer. When viewed from above, the through hole is located inside the substrate opening. The mask body layer contains a metallic material. When viewed from above, the outer edge of the mask body layer is located closer to the inside than the outer edge of the mask intermediate layer.

40. The method for manufacturing a vapor deposition mask as described in claim 39, wherein, In the mask body layer forming process, a resist layer is patterned on the side of the middle layer of the mask opposite to the mask substrate, corresponding to the through hole.

41. The method for manufacturing a vapor deposition mask as described in claim 39 or 40, wherein, The opening size of the through hole in the face of the mask body layer facing the mask substrate in a predetermined direction is larger than the opening size of the through hole in the first face in the predetermined direction.

42. The method for manufacturing a vapor deposition mask as described in claim 38, wherein, In the mask body layer forming process, a mask insulating layer is patterned on the side of the intermediate layer of the mask opposite to the mask substrate, corresponding to the through hole. The mask body layer includes two or more main islands, and the mask insulating layer is located between two adjacent main islands.

43. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, The metal material of the mask body layer is a magnetic metal material.

44. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, The thickness of the intermediate layer of the mask is less than the thickness of the main body layer of the mask.

45. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, The substrate opening forming process includes: a resist layer forming process, wherein a resist layer with resist openings is formed on the surface of the mask substrate opposite to the mask layer; In the substrate etching process, the substrate opening is formed by etching the mask substrate through the resist opening.

46. ​​The method for manufacturing a vapor deposition mask as described in claim 45, wherein, The mask intermediate layer includes a substrate side layer, which contains a material that ensures adhesion to the mask substrate and is resistant to the etching medium used in the substrate etching process.

47. The method for manufacturing a vapor deposition mask as described in claim 46, wherein, The mask intermediate layer includes a main side layer facing the mask main layer, and the main side layer includes a material that can ensure a tight fit with the mask main layer.

48. The method for manufacturing a vapor deposition mask as described in claim 47, wherein, In the mask layer forming process, the mask body layer is formed by plating, and the mask intermediate layer includes an intermediate layer located between the substrate side layer and the body side layer, containing a material capable of protecting the substrate side layer from the plating solution used to form the mask body layer.

49. The method for manufacturing a vapor deposition mask as described in claim 46, wherein, The substrate side layer is in contact with the mask body layer and with the mask substrate.

50. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, In the mask layer formation process, the intermediate mask layer is formed by sputtering.

51. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, In the mask layer forming process, the intermediate mask layer is formed by vapor deposition.

52. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, The mask layer has two or more through holes, which are located within the opening of the substrate when viewed from above.

53. The method for manufacturing a vapor deposition mask as described in claim 52, wherein, The mask layer has two or more through-hole groups consisting of two or more of the aforementioned through holes, and when viewed from above, the two or more through-hole groups are located within the opening of the substrate.

54. The method for manufacturing a vapor deposition mask as described in claim 52, wherein, The mask substrate has two or more substrate openings, and the mask layer has two or more through-hole groups composed of two or more through holes. When viewed from above, the two or more through-hole groups are located within each of the substrate openings.

55. The method for manufacturing a vapor deposition mask as described in claim 52, wherein, The mask substrate has two or more substrate openings, and the mask layer has two or more through-hole groups composed of two or more through holes. When viewed from above, one of the through-hole groups is located within each of the substrate openings.

56. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, The substrate opening is rectangular when viewed from above, and curved portions are provided at the four corners of the outline of the substrate opening when viewed from above.

57. The method for manufacturing a vapor deposition mask as claimed in claim 29 or 39, comprising a step of forming a first alignment mark on the surface of the mask substrate opposite to the mask layer.

58. The method for manufacturing a vapor deposition mask as described in claim 57, wherein, The mask substrate has: a substrate body that defines the substrate opening; and an inner protrusion that protrudes inward from the substrate body when viewed from above, wherein the first alignment mark is located on the inner protrusion.

59. The method for manufacturing a vapor deposition mask as claimed in claim 57, comprising a step of forming a second alignment mark at a position closer to the through hole than the first alignment mark.

60. The method for manufacturing a vapor deposition mask as described in claim 59, wherein, The mask layer has: two or more through holes; two or more through hole groups consisting of two or more through holes; and mask crossbars disposed between adjacent through hole groups, wherein the second alignment mark is located on the mask crossbars.

61. The method for manufacturing a vapor deposition mask as described in claim 60, wherein, The mask crossbars include a first mask crossbar and a second mask crossbar extending in mutually orthogonal directions when viewed from above, and the second alignment mark is located at the intersection of the first mask crossbar and the second mask crossbar.

62. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, The mask body layer comprises two or more body islands, and the slots penetrating the mask body layer are located between two adjacent body islands.

63. The method for manufacturing a vapor deposition mask as described in claim 39, wherein, The mask layer has two or more through-hole groups consisting of two or more through-holes, and the mask layer has a mask insulating layer forming the first surface, the mask insulating layer being located between two adjacent through-hole groups.

64. The method for manufacturing a vapor deposition mask as described in claim 29 or 39, wherein, The mask body layer includes a dummy body island, which is located in a position that does not overlap with the opening of the substrate when viewed from above.

65. A method for manufacturing an organic device, comprising: a vapor deposition mask preparation step, preparing the vapor deposition mask by the vapor deposition mask manufacturing method of claim 29 or 39; a sealing step, sealing the first surface of the mask layer of the vapor deposition mask with a vapor deposition substrate; and a vapor deposition step, depositing vapor deposition material through the through-hole of the vapor deposition mask onto the vapor deposition substrate to form a vapor deposition layer.

66. A method for manufacturing a framed vapor deposition mask, comprising: a vapor deposition mask preparation step, preparing the vapor deposition mask by the method for manufacturing a vapor deposition mask according to claim 29 or 39; and a frame mounting step, mounting a frame on the mask substrate of the vapor deposition mask.

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