Flow guide part, semiconductor process equipment and control method of semiconductor process equipment

Abstract

The invention discloses a flow guide part, semiconductor process equipment and a control method thereof, and relates to the technical field of semiconductors, the flow guide part comprises an annular flow guide structure, the annular flow guide structure comprises an annular flow guide surface, the radial inner edge of the annular flow guide surface is enclosed to form an opening for a rotary objective table to pass through, and the annular flow guide surface extends outwards in the radial direction; the annular flow guide surface is inclined downwards; and the annular flow blocking wall is connected with the radial outer edge of the annular flow guide structure, and the annular flow blocking wall and the annular flow guide structure define a flow guide cavity. The flow guide effect on the fluid on the flow guide part can be improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a flow guide, semiconductor process equipment, and a control method thereof. Background Art

[0002] In related technologies, when a fluid is guided through a guide structure, part of the fluid will adhere to the surface of the guide structure, affecting the guide efficiency. If the solute in the fluid that is easy to crystallize crystallizes on the surface of the guide structure, it will further affect the guide effect of the guide structure, making it impossible for the guide structure to guide the fluid normally.

[0003] Public content

[0004] In order to overcome the problems existing in the related art, the present disclosure provides a flow guide, a semiconductor process equipment and a control method thereof.

[0005] According to a first aspect of an embodiment of the present disclosure, there is provided a flow guide, the flow guide comprising:

[0006] An annular flow-guiding structure, comprising an annular flow-guiding surface, the radial inner edge of which encloses an opening for the rotating stage to pass through, and the annular flow-guiding surface is arranged to be inclined downward in a radially outward direction;

[0007] The annular flow-blocking wall is connected to the radial outer edge of the annular flow-guiding structure, and the annular flow-blocking wall and the annular flow-guiding structure enclose a flow-guiding cavity.

[0008] In some embodiments of the present disclosure, an angle α is formed between a line connecting the top and bottom points of the annular guide surface at a preset cross section and a horizontal plane, and the angle α is 30°≤α≤50°;

[0009] Wherein, the preset cross section is a plane passing through the central axis of the annular flow guide structure.

[0010] In some embodiments of the present disclosure, the annular guide surface includes a plurality of guide units connected to each other and arranged along the circumferential direction. In the circumferential direction, the height of the middle area of ​​the guide unit is lower than the height of the two end areas of the guide unit, and the connection between any two adjacent guide units is a seamless connection and a sealed connection.

[0011] In some embodiments of the present disclosure, the flow guiding unit includes:

[0012] a first edge line, provided on a side of the guide unit away from the opening;

[0013] a second edge line, provided on a side of the guide unit close to the opening;

[0014] The guide unit has multiple preset connecting lines, which are straight lines passing through the first edge line, the second edge line and the central axis of the annular guide structure. In the direction from the two end areas along the circumference to the middle area, the angles between different preset connecting lines and the horizontal plane gradually increase.

[0015] In some embodiments of the present disclosure, the curvature radius at each point of the guide unit gradually increases in the direction from the two end regions to the middle region along the circumferential direction.

[0016] In some embodiments of the present disclosure, the flow guide further includes:

[0017] The vibration device is arranged on the annular flow guide structure and is close to the opening.

[0018] In some embodiments of the present disclosure, the vibration device includes an ultrasonic device, the frequency of the ultrasonic waves emitted by the ultrasonic device is 50-80 kHz, and the vibration part of the ultrasonic device is separately provided from the annular guide structure.

[0019] In some embodiments of the present disclosure, the flow guide further includes:

[0020] An annular collecting portion, wherein the radial inner edge of the annular collecting portion is connected to the radial outer edge of the annular flow guide structure, and the radial outer edge of the annular collecting portion is connected to the annular flow baffle wall, and the annular collecting portion comprises:

[0021] an annular flow collecting surface, wherein the highest point of the annular flow collecting surface is not higher than the lowest point of the annular flow guiding surface;

[0022] The liquid discharge port is arranged on the annular collecting surface.

[0023] In some embodiments of the present disclosure, the annular collecting surface is arranged at an angle, and the drain port is arranged at the lowest point of the annular collecting surface.

[0024] In some embodiments of the present disclosure, a top end of the annular flow-blocking wall is higher than a top end of the annular flow-guiding structure.

[0025] In some embodiments of the present disclosure, the material of the annular guide structure includes at least one of plastic, ceramic, aluminum nitride and silicon carbide.

[0026] According to a second aspect of the embodiments of the present disclosure, there is provided a semiconductor process equipment, comprising: a rotating stage for carrying a semiconductor structure and at least one guide member as described above, wherein the rotating stage can pass through the opening.

[0027] In some embodiments of the present disclosure, a plurality of the guide members are spaced apart from top to bottom, and the semiconductor process equipment further includes a lifting mechanism, which is used to drive the rotating stage to rise and fall so that the rotating stage can pass through the openings of each of the guide members.

[0028] In some embodiments of the present disclosure, the semiconductor process equipment further includes:

[0029] A liquid retaining platform is arranged in a one-to-one correspondence with the guide member, and the liquid retaining platform is arranged above the corresponding guide member. The liquid retaining platform is arranged along the circumference of the annular guide surface. The liquid retaining platform includes a liquid retaining surface arranged toward the corresponding annular guide surface, and the liquid retaining surface is arranged to be inclined downward in the direction away from the opening.

[0030] According to a third aspect of the present disclosure, a control method for semiconductor process equipment is provided, which is applied to the semiconductor process equipment described above. The control method includes:

[0031] Controlling the rotating stage to pass through the opening of the guide member so that the semiconductor structure on the rotating stage is higher than the annular guide surface;

[0032] The fluid is sprayed onto the semiconductor structure, and the rotation of the rotating stage is controlled so that the fluid thrown out by the rotating stage enters the guide cavity.

[0033] In some embodiments of the present disclosure, the flow guide of the semiconductor process equipment further includes: a vibration device disposed on the annular flow guide structure and disposed near the opening; the control method includes a semiconductor manufacturing process and a semiconductor non-manufacturing process, and the control method further includes:

[0034] The vibration device of the flow guide is turned on during the semiconductor non-manufacturing process to drive the fluid on the annular flow guide surface to flow downward, and the vibration device of the flow guide is not turned on during the semiconductor manufacturing process.

[0035] The technical solution provided by the embodiments of the present disclosure may include the following beneficial effects: the annular baffle wall and the annular guide structure enclose a guide cavity, the rotating stage throws the fluid into the guide cavity, the fluid falls on the annular guide surface, and flows along the inclined annular guide surface. The annular baffle wall can prevent the fluid from splashing, so that the fluid falls into the guide cavity. The annular guide surface is tilted downward, so that fluid with higher viscosity can also flow smoothly and discharge from the guide cavity, avoiding the fluid from being retained on the annular guide surface, and further avoiding the fluid from crystallizing on the annular guide surface, thereby improving the guide efficiency of the guide component.

[0036] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0038] Figure 1 is a structural diagram of a flow guide according to an exemplary embodiment;

[0039] Figure 2 is a top view of a flow guide according to an exemplary embodiment;

[0040] Figure 3 yes Figure 2 Cross-sectional view along the AA axis;

[0041] Figure 4 is a cross-sectional view of a flow guide according to an exemplary embodiment;

[0042] Figure 5 is a structural diagram of an annular flow guide structure in a flow guide according to an exemplary embodiment;

[0043] Figure 6 is a top view of a flow guide according to an exemplary embodiment;

[0044] Figure 7 yes Figure 6 Cross-sectional view along the BB direction;

[0045] Figure 8 yes Figure 6 Cross-sectional view in CC direction;

[0046] Figure 9 is a schematic structural diagram of an annular flow-blocking wall and an annular flow collecting portion of a flow guide according to an exemplary embodiment;

[0047] Figure 10 is a schematic structural diagram of a semiconductor process equipment according to an exemplary embodiment;

[0048] Figure 11 is a side view of a semiconductor process equipment according to an exemplary embodiment;

[0049] Figure 12 yes Figure 11 Cross-sectional view in the middle DD direction;

[0050] Figure 13 is a cross-sectional view of a semiconductor process equipment according to an exemplary embodiment;

[0051] Figure 14 The flowchart of a method for controlling semiconductor process equipment is shown according to an exemplary embodiment.

[0052] In the figure: 1- flow guide; 11- annular flow guide structure; 111- annular flow guide surface; 1111a- top point; 1112b- bottom point; 1113- flow guide unit; 11131- first edge line; 11132- second edge line; 11133- preset connection line; 11134- center line; 11135- circumferential edge; 112- opening; 113- center axis; 12- annular flow-blocking wall; 13- flow-guide cavity; 14- vibration device; 15- annular flow collecting part; 151- annular flow collecting surface; 152- drain outlet; 2- rotating stage; 3- liquid blocking stage; 31- liquid blocking surface; 4- spray pipe; 5- drain pipe; 6- horizontal plane. DETAILED DESCRIPTION

[0053] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all possible embodiments consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.

[0054] In related technologies, when a fluid is guided through a guide structure, part of the fluid will adhere to the surface of the guide structure, affecting the guide efficiency. If the solute in the fluid that is easy to crystallize crystallizes on the surface of the guide structure, it will further affect the guide effect of the guide structure, making it impossible for the guide structure to guide the fluid normally.

[0055] The exemplary embodiment of the present disclosure provides a flow guide 1, referring to Figure 1-Figure 2 The flow guide 1 includes: an annular flow guide structure 11 and an annular flow baffle wall 12. The annular flow guide structure 11 includes an annular flow guide surface 111, which is arranged in an annular shape. The radial inner edge of the annular flow guide surface 111 encloses an opening 112 for the rotating stage 2 to pass through. In the radial outward direction, the annular flow guide surface 111 is arranged to be tilted downward, which is conducive to the fluid on the annular flow guide surface 111 flowing along the annular flow guide surface 111 to the outer edge of the annular flow guide surface 111, thereby avoiding the fluid from being adsorbed on the annular flow guide surface 111. The annular flow baffle wall 12 is connected to the radial outer edge of the annular flow guide structure 11. The annular flow baffle wall 12 and the annular flow guide structure 11 enclose a flow guide cavity 13. The fluid in the flow guide cavity 13 can flow along the annular flow guide surface 111 which is arranged to be tilted downward.

[0056] In the embodiment of the present disclosure, the annular baffle wall 12 and the annular guide structure 11 are combined to form a guide cavity 13. The rotating stage 2 throws the fluid into the guide cavity 13. The fluid falls on the annular guide surface 111 and flows along the inclined annular guide surface 111. The annular baffle wall 12 can prevent the fluid from splashing, so that the fluid falls into the guide cavity 13. The annular guide surface 111 is tilted downward, so that fluid with higher viscosity can also flow smoothly and discharge from the guide cavity 13, avoiding the fluid from being retained on the annular guide surface 111, and further avoiding the fluid from crystallizing on the annular guide surface 111, thereby improving the guide efficiency of the guide member 1.

[0057] In some embodiments, reference Figure 2-Figure 3 An angle α is formed between the line connecting the top point 1111a and the bottom point 1112b of the annular guide surface 111 under the preset section AA and the horizontal plane 6, and the angle is 30°≤α≤50°. The preset section is a plane passing through the central axis 113 of the annular guide structure 11, and the preset section coincides with the central axis 113 of the annular guide structure 11.

[0058] In the embodiment of the present disclosure, setting the angle α to be ≥30° and ≤50° can effectively reduce the flow resistance of the fluid on the annular guide surface 111, so that the fluid can flow more smoothly from the radial inner edge to the radial outer edge of the annular guide surface 111, reducing the fluid accumulation or backflow problems caused by poor flow, greatly improving the diversion efficiency, and avoiding the problem of fluid crystallization on the annular guide surface 111.

[0059] In some embodiments, reference Figure 2-Figure 5 The annular guide surface 111 includes a plurality of interconnected guide units 1113 arranged along the circumference. The height of the middle region of a given guide unit 1113 is lower than the height of the end regions of the same guide unit 1113 in the circumferential direction, and the connection between any two adjacent guide units 1113 is seamless and sealed. It is understood that the middle region of a guide unit 1113 refers to the region near the centerline 11134 of the guide unit 1113, and the end regions refer to the region near the circumferential edge 11135 of the guide unit 1113. For example, the number of guide units 1113 within an annular guide surface 1111 can be 8, 10, or 12.

[0060] In an embodiment of the present disclosure, in the circumferential direction, the height of the middle area of ​​the same guide unit 1113 is lower than the height of the two end areas of the guide unit 1113, so that the fluid converges to the middle area of ​​the guide unit 1113 during the flow on the annular guide surface 111, thereby converging and guiding the fluid on the guide unit 1113. The volume and weight of the fluid after convergence are larger, and it is more conducive to flowing downward along the annular guide surface 111 under the action of gravity, thereby facilitating the overall guidance of the fluid, avoiding the fluid from adhering to the annular guide surface 111, and improving the fluid guidance effect. The seamless and sealed connection between adjacent guide units 1113 means that no dead corners will be formed between the two adjacent guide units 1113, and no fluid will accumulate and remain in the dead corners, further improving the fluid guidance effect. For example, the seamless and sealed connection can be laser welding or an integrated molding setting.

[0061] In some embodiments, reference Figure 6-Figure 8 The air guide unit 1113 includes a first edge line 11131 and a second edge line 11132. The first edge line 11131 is located on a side of the air guide unit 1113 away from the opening 112. The second edge line 11132 is located on a side of the air guide unit 1113 closer to the opening 112. For example, the first edge line 11131 and the second edge line 11132 can each be configured in an arc shape with higher ends and a lower center.

[0062] The air guide unit 1113 has multiple preset connecting lines 11133. These are straight lines passing through the first edge line 11131, the second edge line 11132, and the central axis 113 of the annular air guide structure 11. The angles between the different preset connecting lines 11133 and the horizontal plane 6 gradually increase from the two end regions toward the middle region along the circumference. For example, the preset connecting lines 11133 and the central axis 113 of the annular air guide structure 11 are simultaneously located within the same preset cross-section. Figure 7 The preset connection line 11133 is located at the two end areas of the diversion unit 1113. Figure 8 The preset connection line 11133 is located in the middle area of ​​the same guide unit 1113. Figure 7 There is an angle β between the preset connecting line 11133 and the horizontal plane 6, Figure 8 There is an included angle γ between the preset connecting line 11133 in and the horizontal plane 6, satisfying β<γ.

[0063] In the embodiment of the present disclosure, the angle between different preset connection lines 11133 and the horizontal plane 6 gradually increases along the circumferential direction from the two end areas to the middle area, which can promote the fluid to accelerate the flow toward the middle area with the help of gravity and quickly converge to the middle area, and guide the fluid in the middle area, which can prevent the fluid from adhering to the annular guide surface 111. The angle between the preset connection line 11133 in the middle area and the horizontal plane 6 is relatively large, which can improve the fluid diversion efficiency in the middle area and prevent the fluid from being retained and crystallized on the annular guide surface 111.

[0064] In some embodiments, reference Figure 5 The guide unit 1113 is set as a curved surface, and the curvature radius at each point of the guide unit 1113 gradually increases in the direction from the two end areas to the middle area along the circumferential direction.

[0065] In the embodiment of the present disclosure, when the fluid flows from the two end areas to the middle area, it will gradually move toward the middle area due to the change in curvature. The curvature radius of the guide unit 1113 in the middle area is large, so that the middle area with a large curvature radius forms a smoothly transitioned guide surface, reducing the generation of vortices when the fluid converges in the middle area, thereby reducing the resistance to fluid diversion and improving the fluid diversion efficiency.

[0066] In some embodiments, the flow guide 1 further includes a vibration device 14, which is connected to the bottom of the annular flow guide structure 11. The vibration device 14 is disposed on the annular flow guide structure 11 and is located near the opening 112. This facilitates the vibration device 14 to disturb the fluid on the annular flow guide surface 111, thereby promoting fluid flow and preventing the fluid from adhering to the annular flow guide surface 111. The vibration device 14 is disposed at the bottom of the annular flow guide structure 11 and is located near the opening 112. This can enhance the disturbance effect on the fluid on the annular flow guide surface 111 near the opening 112, thereby promoting the fluid on the annular flow guide surface 111 away from the opening 112 to simultaneously flow during the flow process, thereby facilitating the collection and diversion of the fluid.

[0067] In some embodiments, reference Figure 7 and Figure 8 The vibration device 14 includes a vibration unit, which can vibrate to drive the guide member 1 to vibrate, thereby causing the fluid on the guide surface to move.

[0068] In some embodiments, the vibration device 14 includes an ultrasonic device that emits ultrasonic waves, which disturb the air within the fluid on the annular guide surface 111. The disturbed air causes the fluid to acquire kinetic energy and flow. The ultrasonic waves emitted by the ultrasonic device have a frequency of 50-80 kHz. The vibration portion of the ultrasonic device is separated from the annular guide structure 11. At this ultrasonic frequency, even fluids with high viscosity can be disturbed, thereby causing the fluid to flow and converge.

[0069] In the embodiment of the present disclosure, the ultrasonic device only emits ultrasonic waves and does not produce a vibration effect on the guide member 1, which can avoid the reduction of the sealing performance of the various sealing connections of the guide member 1 due to vibration, prevent the formation of gaps at the various sealing connections of the guide member 1, and avoid the accumulation of fluid in the gaps.

[0070] In some embodiments, reference Figure 6-Figure 9 The flow guide 1 also includes an annular collecting portion 15, which is configured as an annular structure. The radial inner edge of the annular collecting portion 15 is connected to the radial outer edge of the annular flow guide structure 11, and the radial outer edge of the annular collecting portion 15 is connected to the annular baffle wall 12. The annular collecting portion 15, the annular flow guide structure 11, and the annular flow baffle wall 12 can be integrally formed. The annular collecting portion 15 includes an annular collecting surface 151 and a drain port 152. The highest point of the annular collecting surface 151 is not higher than the lowest point of the annular flow guide surface 111, which can ensure that the fluid guided by the annular flow guide structure 11 flows smoothly to the collecting surface, avoiding the situation where part of the annular collecting surface 151 is higher than the annular flow guide surface 111, causing the fluid flowing to the annular collecting surface 151 to flow back to the annular flow guide surface 111, thereby avoiding the backflow of the fluid and the accumulation of the fluid on the annular flow guide surface 111, making the flow guide 1 have a smoother flow guiding effect on the fluid. The drain port 152 is provided on the annular collecting surface 151 , so that the fluid flowing onto the annular collecting surface 151 can be discharged from the guide member 1 through the drain port 152 .

[0071] In some embodiments, reference Figure 6-Figure 9 The annular collecting surface 151 is annular and inclined, and a drain port 152 is provided on the annular collecting surface 151 at its lowest point. This allows the fluid on the annular collecting surface 151 to flow to the drain port 152 under the action of gravity. This reduces the amount of fluid remaining on the annular collecting surface 151, prevents fluid from being retained on the annular collecting surface 151 and crystallizing, and improves the diversion efficiency of the diversion member 1. The drain port 152 is connected to a drain pipe 5, through which the fluid guided by the annular diversion structure 11 is discharged.

[0072] In some embodiments, reference Figure 6-Figure 9 The top of annular baffle 12 is higher than the top of annular guide structure 11. This prevents fluid from splashing out of guide cavity 13, thereby preventing contamination and corrosion of surrounding equipment or the environment. For example, the fluid may include hydrofluoric acid, ammonium fluoride, ammonia, or the like, facilitating etching or cleaning of semiconductor structures.

[0073] In some embodiments, the material of the annular flow-guiding structure 11 includes at least one of plastic, ceramic, aluminum nitride, and silicon carbide. The plastic may include polytetrafluoroethylene or polyvinylidene fluoride. The low surface energy of the plastic makes it difficult for the fluid to adsorb on the plastic surface, thereby reducing the adsorption and crystallization of the fluid on the surface of the annular flow-guiding structure 11 and improving the flow-guiding efficiency of the annular flow-guiding structure 11. The ceramic may include at least one of aluminum nitride and silicon nitride. Ceramic materials, aluminum nitride, and silicon nitride have low surface energy and a relatively smooth surface. The smooth surface can inhibit the fluid from being retained on the surface of the annular flow-guiding structure 11, thereby improving the flow-guiding efficiency of the annular flow-guiding structure 11.

[0074] The present disclosure provides a semiconductor process equipment according to an exemplary embodiment of the present disclosure. Figure 10-13 , the semiconductor process equipment includes a rotating stage 2 and at least one flow guide 1. The rotating stage 2 is used to carry wafers, and the wafers are etched by spraying the fluid for etching onto the rotating stage 2. The flow guide 1 adopts the flow guide 1 described above. Therefore, the semiconductor process equipment in the embodiment of the present disclosure has all the beneficial effects of the above-mentioned flow guide 1. The rotating stage 2 can pass through the opening 112 and rise and fall back and forth along the direction of the central axis 113 of the flow guide 1. By lifting and lowering the rotating stage 2, the semiconductor structure corresponds to the flow guide cavity 13 of different flow guides 1, thereby throwing different fluids used in the semiconductor manufacturing process into different flow guide cavities 13, which can prevent different fluids from reacting in the same flow guide cavity 13.

[0075] In some embodiments, reference Figure 10-13 A plurality of flow guides 1 are arranged at intervals from top to bottom. The rotating stage 2 can be raised and lowered to the corresponding different flow guides 1 to carry out different semiconductor manufacturing processes. The fluid sprayed during the semiconductor manufacturing process is thrown into the corresponding flow guide cavity 13 through the rotation of the rotating stage 2, and then the fluid is guided out of the flow guide cavity 13 through the flow guide 1 and recovered.

[0076] The semiconductor process equipment further includes a lifting mechanism, which is used to drive the rotating stage 2 to move up and down so that the rotating stage 2 can pass through the openings 112 of each guide member 1 .

[0077] During the semiconductor structure manufacturing process, different process links have different requirements for the relative position of the wafer and the guide member 1. The lifting mechanism can accurately adjust the height of the rotating stage 2 so that the wafer can be switched to different process areas accordingly, shortening the process switching time and improving the manufacturing efficiency of the semiconductor structure.

[0078] In some embodiments, reference Figure 10-13The semiconductor processing equipment further includes a liquid retaining platform 3, which is disposed in a one-to-one correspondence with the flow guide member 1. The liquid retaining platform 3 is disposed above the corresponding flow guide member 1 and is disposed along the circumference of the annular flow guide surface 111. A through opening is disposed in the middle of the liquid retaining platform 3, which corresponds to the opening 112 of the annular flow guide structure 11. The rotating stage 2 can pass through the through opening and the opening 112 by being raised or lowered.

[0079] The liquid retaining platform 3 includes a liquid retaining surface 31 arranged toward the corresponding annular guide surface 111. The liquid retaining surface 31 is used to prevent the fluid from splashing out of the guide cavity 13, thereby preventing the fluid from splashing and polluting the equipment or the surrounding environment. In the direction away from the opening 112, the liquid retaining surface 31 is tilted downward so that the fluid splashed onto the liquid retaining surface 31 slides down along the liquid retaining surface 31 to the annular guide surface 111 under the action of gravity, thereby preventing the fluid from accumulating and crystallizing on the liquid retaining surface 31 and improving the guide efficiency. The downward tilt of the liquid retaining surface 31 prevents the fluid from remaining on the liquid retaining surface 31, reduces the adhesion of the fluid, avoids the disassembly and cleaning of the semiconductor process equipment, and facilitates the cleaning and maintenance of the semiconductor process equipment.

[0080] In some embodiments, the semiconductor process equipment also includes a sealing ring, which is arranged between two adjacent upper and lower flow guide members 1. A sealing ring is arranged between the annular flow guide structure 11 of the upper flow guide member 1 and the annular flow baffle wall 12 of the lower flow guide member 1. The sealing ring is used to seal and connect the two adjacent flow guide members 1 to prevent the fluid from splashing out of the semiconductor process equipment.

[0081] In some embodiments, semiconductor process equipment includes three flow guides 1, which are connected in sequence up and down. The three flow guides 1 include: a first flow guide located at the bottom, a second flow guide located in the middle, and a third flow guide located at the top. A first flow guide cavity is formed in the first flow guide. By raising and lowering the rotating stage 2, the semiconductor structure on the rotating stage 2 is controlled to be higher than the first flow guide. Ammonia water is sprayed onto the rotating stage 2 to etch the semiconductor structure or clean and remove particles on the semiconductor structure. At the same time, the rotating stage 2 is controlled to rotate to throw the ammonia water on the rotating stage 2 into the first flow guide cavity, and the ammonia water is guided and recovered through the first flow guide.

[0082] A second guide cavity is formed in the second guide member. By raising and lowering the rotating stage 2, the semiconductor structure on the rotating stage 2 is controlled to be higher than the second guide member. By spraying hydrofluoric acid and ammonium fluoride fluid onto the rotating stage 2 to clean the residues on the surface of the wafer of the previous process, such as silicon nitride residues, the rotating stage 2 is controlled to rotate at the same time, and the hydrofluoric acid and ammonium fluoride fluid on the rotating stage 2 are thrown into the second guide cavity. The hydrofluoric acid and ammonium fluoride fluid distributed in the second guide cavity are easy to crystallize into ammonium fluoride. The height of the middle area of ​​the guide unit passing through the second guide member is lower than the height of the two end areas of the guide unit, so that the fluids distributed in the two end areas of the guide surface can converge to the middle area under the action of gravity, preventing the hydrofluoric acid and ammonium fluoride fluids from adhering to the second guide member, thereby preventing the hydrofluoric acid and ammonium fluoride fluids from crystallizing into ammonium fluoride on the second guide member, thereby improving the diversion and recovery efficiency of the hydrofluoric acid and ammonium fluoride fluids.

[0083] A third guide cavity is formed within the third guide member. By raising and lowering the rotating stage 2, the semiconductor structure on the rotating stage 2 is controlled to be higher than the third guide member. A cleaning agent is sprayed onto the rotating stage 2 while the semiconductor structure is dried with nitrogen gas to clean and dry the semiconductor structure. Simultaneously, the rotating stage 2 is controlled to rotate, flinging the cleaning agent on the rotating stage 2 into the third guide cavity, where it is then channeled and recovered through the third guide member.

[0084] This embodiment can improve the fluid guiding efficiency of semiconductor process equipment and reduce the problem of fluid accumulation on the guide member 1. By improving the fluid guiding efficiency, the acid gas generated by the acidic fluid in the guide member 1 is reduced, and the acid gas is prevented from overflowing from the guide member 1 through the connection gap of the sealing ring. The problem of crystallization on the outer surface of the guide member 1 and contamination of semiconductor industrial equipment is prevented, and the acid gas is prevented from corroding the sealing ring, thereby improving the service life of the sealing ring.

[0085] The present disclosure provides a method for controlling semiconductor process equipment according to an exemplary embodiment of the present disclosure. Figure 10-14 , the control method is applied to the above-mentioned semiconductor process equipment, and the control method includes:

[0086] S100 , controlling the rotating stage to pass through the opening of the guide member so that the semiconductor structure on the rotating stage is higher than the annular guide surface.

[0087] When a semiconductor structure is manufactured using semiconductor processing equipment, the semiconductor structure, which can be a wafer, is placed on a rotating stage 2. The semiconductor structure on the rotating stage 2 is raised above the annular guide surface 111 to prevent the fluid on the rotating stage 2 from being thrown outside the guide member 1 after the rotating stage 2 rotates. For example, the lowest point of the rotating stage is 1-1.5 cm higher than the highest point of the annular guide surface.

[0088] S200 , spraying fluid onto the semiconductor structure, while controlling the rotation of the rotating stage so that the fluid thrown out by the rotating stage enters the guide cavity.

[0089] The semiconductor process equipment also includes a spray pipe 4, which sprays a fluid used to etch or clean wafers onto the rotating stage 2 through the spray pipe 4. The fluid can contain hydrofluoric acid or ammonia, etc., and the wafers can be etched or cleaned according to the different etching selectivities of the wafer materials. The fluid is sprayed and the rotation of the rotating stage 2 is controlled at the same time so that the rotating stage 2 throws the etched fluid into the guide cavity 13. After the liquid is thrown into the guide cavity 13, it falls on the annular guide surface 111. The annular guide surface 111 includes multiple guide units 1113. In the circumferential direction, the height of the middle area of ​​the guide unit 1113 is lower than the height of the two end areas of the guide unit 1113, so that the fluid distributed in the two end areas of the guide surface can converge to the middle area under the action of gravity. The converged fluid flows to the annular collecting surface 151 and is discharged from the semiconductor process equipment through the drain port 152 and the drain pipe 5.

[0090] In some embodiments, the flow guide 1 of the semiconductor process equipment further includes a vibration device 14, which is disposed on the annular flow guide structure 11 and is located near the opening 112. The control method of the semiconductor process equipment includes a semiconductor manufacturing process and a semiconductor non-manufacturing process. During the semiconductor manufacturing process, the rotary stage 2 starts rotating and a fluid is sprayed onto the semiconductor structure on the rotary stage 2 to etch the semiconductor structure. During the semiconductor non-manufacturing process, the fluid is stopped from being sprayed onto the semiconductor structure, and the rotary stage 2 stops rotating.

[0091] The control method further includes:

[0092] The vibration device of the flow guide is turned on during the non-manufacturing process of the semiconductor to drive the fluid on the annular flow guide surface to flow downward, and the vibration device of the flow guide is not turned on during the manufacturing process of the semiconductor.

[0093] During the non-semiconductor manufacturing process, the vibrating device 14 of the flow guide 1 is activated. The vibrating device 14 includes an ultrasonic device that emits ultrasonic waves. The ultrasonic waves disturb the air within the fluid on the annular flow guide surface 111. The disturbed air causes the fluid to acquire kinetic energy and flow, preventing the fluid from dispersing and stagnating on the surface of the flow guide 1. The ultrasonic device only emits ultrasonic waves and does not vibrate the flow guide 1. This prevents vibration from degrading the sealing properties of the various sealing joints of the flow guide 1. Furthermore, the vibration does not cause the wafer pattern to collapse, thereby preventing damage to the semiconductor structure's manufacturing process.

[0094] During the semiconductor manufacturing process, fluid drips onto the wafer surface, and bubbles are mixed in the fluid. Activating the vibration device in this situation can disturb the bubbles in the fluid on the wafer surface, leading to collapse and damage to the wafer pattern, which is detrimental to semiconductor structure fabrication. Therefore, not activating the vibration device 14 of the flow guide 1 during the semiconductor manufacturing process can improve the success rate and yield of semiconductor structure fabrication.

[0095] The control method of the semiconductor process equipment disclosed in the present invention performs a semiconductor manufacturing process by turning on the semiconductor process equipment. Specifically, it can be: performing a batch of manufacturing process, and a batch of manufacturing process can be every fixed number of semiconductor structures manufactured, or every fixed semiconductor structure manufacturing time. After performing a batch of manufacturing process, a semiconductor non-manufacturing process is performed, and the vibration device 14 is turned on at this time, and the air in the fluid on the annular guide surface 111 is disturbed by ultrasonic waves. The disturbed air causes the fluid to obtain kinetic energy and flow, and prevents the problem of the fluid being dispersed and not flowing on the surface of the guide member 1, thereby improving the fluid diversion efficiency. After the semiconductor non-manufacturing process is performed, the fluid on the surface of the guide member 1 is diverted and discharged, and then the next semiconductor manufacturing process is performed. The above semiconductor manufacturing process and semiconductor non-manufacturing process are circulated until the entire manufacturing process of the semiconductor structure is completed.

[0096] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the claims.

[0097] It should be understood that the present disclosure is not limited to the exact structures that have been described above and shown in the drawings, and that various modifications and changes can be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A flow guide, characterized in that: include: An annular flow-guiding structure, comprising an annular flow-guiding surface, the radial inner edge of which encloses an opening for the rotating stage to pass through, and the annular flow-guiding surface is arranged to be inclined downward in a radially outward direction; The annular flow-blocking wall is connected to the radial outer edge of the annular flow-guiding structure, and the annular flow-blocking wall and the annular flow-guiding structure enclose a flow-guiding cavity.

2. The flow guide according to claim 1, characterized in that: The angle α between the line connecting the top point and the bottom point of the annular guide surface at the preset cross section and the horizontal plane is 30°≤α≤50°; Wherein, the preset cross section is a plane passing through the central axis of the annular flow guide structure.

3. The flow guide according to claim 1, characterized in that: The annular guide surface includes a plurality of guide units connected to each other and arranged along the circumferential direction. In the circumferential direction, the height of the middle area of ​​the guide unit is lower than the height of the two end areas of the guide unit, and the connection between any two adjacent guide units is seamless and sealed.

4. The flow guide according to claim 3, characterized in that: The flow guiding unit comprises: a first edge line, provided on a side of the guide unit away from the opening; a second edge line, provided on a side of the guide unit close to the opening; The guide unit has multiple preset connecting lines, which are straight lines passing through the first edge line, the second edge line and the central axis of the annular guide structure. In the direction from the two end areas along the circumference to the middle area, the angles between different preset connecting lines and the horizontal plane gradually increase.

5. The flow guide according to claim 3, characterized in that: In the direction from the two end areas to the middle area along the circumferential direction, the curvature radius at each point of the guide unit gradually increases.

6. The flow guide according to any one of claims 1 to 5, characterized in that: The flow guide also includes: The vibration device is arranged on the annular flow guide structure and is close to the opening.

7. The flow guide according to claim 6, characterized in that: The vibration device includes an ultrasonic device. The frequency of the ultrasonic waves emitted by the ultrasonic device is 50-80 kHz. The vibration part of the ultrasonic device is separated from the annular guide structure.

8. The flow guide according to any one of claims 1 to 5, characterized in that: The flow guide also includes: An annular collecting portion, wherein the radial inner edge of the annular collecting portion is connected to the radial outer edge of the annular flow guide structure, and the radial outer edge of the annular collecting portion is connected to the annular flow baffle wall, and the annular collecting portion comprises: an annular flow collecting surface, wherein the highest point of the annular flow collecting surface is not higher than the lowest point of the annular flow guiding surface; The liquid discharge port is arranged on the annular collecting surface.

9. The flow guide according to claim 8, characterized in that: The annular collecting surface is arranged at an inclination, and the drain port is arranged at the lowest point of the annular collecting surface.

10. The flow guide according to any one of claims 1 to 5, characterized in that: The top end of the annular flow-blocking wall is higher than the top end of the annular flow-guiding structure.

11. A semiconductor process equipment, characterized in that: include: A rotating stage for carrying a semiconductor structure and at least one guide member according to any one of claims 1 to 10, wherein the rotating stage can pass through the opening.

12. The semiconductor process equipment according to claim 11, wherein: A plurality of the guide members are arranged at intervals from top to bottom. The semiconductor process equipment further includes a lifting mechanism, which is used to drive the rotating stage to rise and fall so that the rotating stage can pass through the openings of the guide members.

13. The semiconductor process equipment according to claim 11 or 12, characterized in that: The semiconductor process equipment further comprises: A liquid retaining platform is arranged in a one-to-one correspondence with the guide member, and the liquid retaining platform is arranged above the corresponding guide member. The liquid retaining platform is arranged along the circumference of the annular guide surface. The liquid retaining platform includes a liquid retaining surface arranged toward the corresponding annular guide surface, and the liquid retaining surface is arranged to be inclined downward in the direction away from the opening.

14. A method for controlling semiconductor process equipment, characterized in that: Applied to the semiconductor process equipment according to any one of claims 11 to 13, the control method comprises: Controlling the rotating stage to pass through the opening of the guide member so that the semiconductor structure on the rotating stage is higher than the annular guide surface; The fluid is sprayed onto the semiconductor structure, and the rotation of the rotating stage is controlled so that the fluid thrown out by the rotating stage enters the guide cavity.

15. The control method according to claim 14, characterized in that: The flow guide of the semiconductor process equipment further includes: a vibration device, which is arranged on the annular flow guide structure and is arranged near the opening; the control method includes a semiconductor manufacturing process and a semiconductor non-manufacturing process, and the control method further includes: The vibration device of the flow guide is turned on during the semiconductor non-manufacturing process to drive the fluid on the annular flow guide surface to flow downward, and the vibration device of the flow guide is not turned on during the semiconductor manufacturing process.

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