Gallium nitride power device structure

Abstract

The invention relates to the technical field of semiconductors, in particular to a gallium nitride power device structure. The gallium nitride power device structure is a gallium nitride power device with negative voltage, when a first driving signal is changed from high level to low level, the first output end of the negative voltage generation module is changed into low level, a negative voltage turn-off signal is generated at the other end of the negative voltage generation module, and the voltage of the control end of the gallium nitride main tube module is clamped at a negative voltage value. The negative pressure is generated at the control end of the gallium nitride main tube module in the gallium nitride power device structure, and the usability of the gallium nitride power device is improved. Meanwhile, the gallium nitride main tube module, the isolation module and the negative voltage driving module are integrated based on the same gallium nitride process platform, parasitic inductance caused by wiring connection among components is eliminated, oscillation generated by a loop at the control end of the gallium nitride main tube module is further reduced, and mistaken starting of the gallium nitride power device is better restrained.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a gallium nitride power device structure. Background Art

[0002] Compared to Si power devices, gallium nitride high electron mobility transistors (GaN HEMTs) offer superior quality factors and broader application prospects in high-power and high-frequency applications. The lateral device structure of GaN devices results in extremely low parasitic capacitance, and the absence of a body diode with a reverse recovery charge Qrr = 0 makes them ideally suited for high-frequency, miniaturized power systems, with significant advantages in applications above 500kHz. Due to their superior performance, GaN devices can increase system switching frequency compared to traditional Si power devices, improving power density and reducing power consumption while reducing system size. GaN devices hold enormous potential.

[0003] In the circuit, due to the physical layout and connection method of the device, some unexpected parasitic inductance will inevitably be generated. These parasitic inductances are particularly significant in the packaging and PCB (printed circuit board) layout of GaN devices. In addition, the threshold voltage of GaN devices is low, such as Figure 1~Figure 2 As shown, in scenarios with large current change rates (di / dt), the parasitic inductance in the gate loop of the GaN device produces a large voltage change at the moment of shutdown, causing voltage oscillation in the gate loop of the GaN device. When the oscillating voltage exceeds the threshold voltage of the GaN device, the GaN device will be mistakenly turned on, which may seriously cause the device to burn out and lead to system failure. How to prevent the mistaken turn-on of the GaN device is one of the key technical issues in the application of GaN devices. Summary of the Invention

[0004] In order to solve the above technical problems, the present invention provides a gallium nitride power device structure.

[0005] The present application provides a gallium nitride power device structure, comprising: Negative pressure generation module, isolation module, negative pressure drive module, gallium nitride main module; The first output end of the negative pressure generating module is connected to the first input end of the isolation module and the first input end of the negative pressure driving module, and the second output end of the negative pressure generating module is connected to the second input end of the negative pressure driving module; the first output end of the negative pressure driving module is connected to the second input end of the isolation module and the control end of the gallium nitride supervisor module, and the second output end of the negative pressure driving module is connected to the source end of the gallium nitride supervisor module. The isolation module, the negative pressure driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform; The negative pressure generating module obtains a first driving signal. When the first driving signal changes from a high level to a low level, the first output end of the negative pressure generating module changes to a low level, and the second output end of the negative pressure generating module generates a negative pressure shutdown signal. The negative pressure driving module drives the isolation module based on the negative pressure shutdown signal to isolate the gallium nitride supervisor module from the first driving signal, thereby driving the gallium nitride supervisor module to shut down.

[0006] Optionally, the negative pressure generating module includes a first capacitor, one end of the first capacitor is used to obtain a first driving signal and is connected to the first input end of the isolation module and the first input end of the negative pressure driving module, and the other end of the first capacitor is connected to the second input end of the negative pressure driving module.

[0007] Optionally, the negative pressure generating module further includes a first on resistor and a first off resistor; One end of the first turn-on resistor is used to obtain a first drive signal, and the other end of the first turn-on resistor is connected to one end of the first capacitor, the first input end of the isolation module, and the first input end of the negative voltage driving module. One end of the first turn-off resistor is connected to the other end of the first capacitor, and the other end of the first turn-off resistor is connected to the second input end of the negative voltage driving module. The first capacitor, the first turn-on resistor, the first turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and packaged based on the same gallium nitride process platform to form the gallium nitride power device structure; or the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform, and then integrated with the first capacitor, the first turn-on resistor, and the first turn-off resistor on a PCB board to form the gallium nitride power device structure; or the first capacitor, the first turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform, and then connected to the first turn-on resistor to form the gallium nitride power device structure.

[0008] Optionally, the negative voltage generating module further includes a second turn-on resistor and a second turn-off resistor; one end of the second turn-on resistor is used to obtain the first drive signal and is connected to one end of the first capacitor, the other end of the second turn-on resistor is connected to the first input end of the negative voltage driving module and the first input end of the isolation module, one end of the second turn-off resistor is connected to the other end of the first capacitor, and the other end of the second turn-off resistor is connected to the second input end of the negative voltage driving module; the first capacitor, the first turn-on resistor, the first turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and packaged based on the same gallium nitride process platform to form the gallium nitride power device structure; or the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and prepared based on the same gallium nitride process platform, and then integrated with the first capacitor, the second turn-on resistor, and the second turn-off resistor on a PCB board to form the gallium nitride power device structure; the first capacitor, the second turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and prepared based on the same gallium nitride process platform, and then connected to the second turn-on resistor to form a gallium nitride power device structure.

[0009] Optionally, the negative voltage driving module includes a first enhancement-mode gallium nitride device, a second enhancement-mode gallium nitride device, and a first current-limiting resistor; one end of the first current-limiting resistor is connected to the first output of the negative voltage generating module and the first input of the isolation module, the other end of the first current-limiting resistor is connected to the drain of the first enhancement-mode gallium nitride device, the gate of the first enhancement-mode gallium nitride device, and the source of the second enhancement-mode gallium nitride device, the source of the first enhancement-mode gallium nitride device is connected to the gate of the second enhancement-mode gallium nitride device and the source end of the gallium nitride supervisor module, and the drain of the second enhancement-mode gallium nitride device is connected to the second input of the isolation module and the control end of the gallium nitride supervisor module.

[0010] Optionally, the isolation module includes a first depletion-mode gallium nitride device and a first voltage-divider resistor; one end of the first voltage-divider resistor is connected to the drain of the first depletion-mode gallium nitride device, the first output of the negative voltage generating module, and the first input of the negative voltage driving module, and the other end of the first voltage-divider resistor is connected to the gate of the first depletion-mode gallium nitride device, the source of the first depletion-mode gallium nitride device, the first output of the negative voltage driving module, and the control end of the gallium nitride supervisor module.

[0011] Optionally, the isolation module includes a second depletion-mode gallium nitride device, a third enhancement-mode gallium nitride device, and a second voltage-divider resistor; one end of the second voltage-divider resistor is connected to the drain of the second depletion-mode gallium nitride device, the drain of the third enhancement-mode gallium nitride device, the first output of the negative voltage generating module, and the first input of the negative voltage driving module; the other end of the second voltage-divider resistor is connected to the gate of the second depletion-mode gallium nitride device, the gate of the third enhancement-mode gallium nitride device, and the first output of the negative voltage driving module; the source of the second depletion-mode gallium nitride device is connected to the source of the third enhancement-mode gallium nitride device, the control end of the gallium nitride supervisor module, and the first output of the negative voltage driving module.

[0012] Optionally, the negative voltage driving module includes a fourth enhancement-mode gallium nitride device, a fifth enhancement-mode gallium nitride device, a sixth enhancement-mode gallium nitride device, and a second current-limiting resistor; one end of the second current-limiting resistor is connected to the first output of the negative voltage generating module and the first input of the isolation module, and the other end of the second current-limiting resistor is connected to the drain of the fourth enhancement-mode gallium nitride device, the gate of the fourth enhancement-mode gallium nitride device, the source of the fifth enhancement-mode gallium nitride device, and the source of the sixth enhancement-mode gallium nitride device; the source of the fourth enhancement-mode gallium nitride device is connected to the gate of the fifth enhancement-mode gallium nitride device, the gate of the sixth enhancement-mode gallium nitride device, and the source of the gallium nitride main module; the drain of the fifth enhancement-mode gallium nitride device is connected to the second input of the isolation module; and the drain of the sixth enhancement-mode gallium nitride device serves as the third output of the negative voltage driving module and is connected to the third input of the isolation module. The isolation module includes a third depletion-mode gallium nitride device, a seventh enhancement-mode gallium nitride device, and a third voltage-dividing resistor; one end of the third voltage-dividing resistor is connected to the drain of the third depletion-mode gallium nitride device, the drain of the seventh enhancement-mode gallium nitride device, the first output of the negative voltage generating module, and the first input of the negative voltage driving module; the other end of the third voltage-dividing resistor is connected to the gate of the third depletion-mode gallium nitride device, the gate of the seventh enhancement-mode gallium nitride device, and is connected to the third output of the negative voltage driving module as the third input of the isolation module; the source of the third depletion-mode gallium nitride device is connected to the source of the seventh enhancement-mode gallium nitride device, the control end of the gallium nitride supervisor module, and the first output of the negative voltage driving module.

[0013] Optionally, it further includes a first ESD protection module, one end of which is connected to the control end of the gallium nitride supervisor module, and the other end of the first ESD protection module is connected to the source end of the gallium nitride supervisor module; or it further includes a second ESD protection module, one end of which is connected to the first input end of the isolation module and the first output end of the negative pressure generating module, and the other end of the second ESD protection module is connected to the source end of the gallium nitride supervisor module; or it further includes a third ESD protection module, one end of the third ESD protection module is connected to the second output end of the negative pressure generating module and the second input end of the negative pressure driving module, and the other end of the third ESD protection module is connected to the source end of the gallium nitride supervisor module.

[0014] Optionally, the gallium nitride supervisor module includes a first gallium nitride supervisor, a gate of the first gallium nitride supervisor is connected to the first input end of the isolation module and the first output end of the negative voltage driving module, a source end of the first gallium nitride supervisor is connected to the second output end of the negative voltage driving module, and the first gallium nitride supervisor is an enhancement-mode gallium nitride device.

[0015] The present invention also provides a gallium nitride power device structure, comprising: A negative pressure generating module and a gallium nitride power device IC; the gallium nitride power device IC includes an isolation module, a negative pressure driving module, and a gallium nitride supervisor module. The first output end of the negative pressure generating module is connected to the first input end of the isolation module and the first input end of the negative pressure driving module, and the second output end of the negative pressure generating module is connected to the second input end of the negative pressure driving module; the first output end of the negative pressure driving module is connected to the second input end of the isolation module and the control end of the gallium nitride supervisor module, and the second output end of the negative pressure driving module is connected to the source end of the gallium nitride supervisor module. The gallium nitride power device IC is integrated and manufactured based on a gallium nitride process platform. The negative pressure generating module obtains a first driving signal. When the first driving signal changes from a high level to a low level, the first output end of the negative pressure generating module changes to a low level, and the second output end of the negative pressure generating module generates a negative pressure shutdown signal. The negative pressure driving module drives the isolation module based on the negative pressure shutdown signal to isolate the gallium nitride supervisor module from the first driving signal, thereby driving the gallium nitride supervisor module to shut down.

[0016] In summary, the advantages and beneficial effects of the present invention are: The present application provides a gallium nitride power device structure, comprising: a negative voltage generating module, an isolation module, a negative voltage driving module, and a gallium nitride (GaN) supervisor module; a first output end of the negative voltage generating module is connected to a first input end of the isolation module and a first input end of the negative voltage driving module, and a second output end of the negative voltage generating module is connected to a second input end of the negative voltage driving module; the first output end of the negative voltage driving module is connected to a second input end of the isolation module and a control end of the GaN supervisor module, and the second output end of the negative voltage driving module is connected to a source end of the GaN supervisor module; the isolation module, the negative voltage driving module, and the GaN supervisor module are integrated and manufactured based on the same GaN process platform; the negative voltage generating module obtains a first driving signal, and when the first driving signal changes from a high level to a low level, the first output end of the negative voltage generating module changes to a low level, and the second output end of the negative voltage generating module generates a negative voltage shutdown signal. Based on the negative voltage shutdown signal, the negative voltage driving module drives the isolation module to isolate the GaN supervisor module from the first driving signal, thereby driving the GaN supervisor module to shut down.

[0017] The GaN power device structure is a GaN power device with built-in negative voltage. When the first drive signal changes from a high level to a low level, the first output terminal of the negative voltage generating module changes to a low level, and the second output terminal of the negative voltage generating module changes to a negative voltage. That is, a negative voltage shutdown signal is generated at the other end of the negative voltage generating module. The negative voltage shutdown signal clamps the voltage at the control terminal of the GaN supervisor module to a negative voltage value, causing the GaN supervisor module to shut down. This generates a negative voltage at the control terminal of the GaN supervisor module within the GaN power device structure, improves the usability of the GaN power device, and avoids the GaN power device from being mistakenly turned on when the oscillation voltage generated by the control terminal circuit of the GaN supervisor module exceeds the threshold voltage of the GaN supervisor module at the moment of shutdown in a large di / dt scenario. This thereby avoids burning of the GaN power device or even system failure.

[0018] Furthermore, integrating the GaN supervisor module, isolation module, and negative voltage driver module on the same GaN process platform eliminates parasitic inductance introduced by wiring connections between components, compared to existing designs that rely on additional negative voltage circuits. This further reduces oscillations generated by the GaN supervisor module's control-side loop, effectively suppressing false activation of the GaN power device. Furthermore, integrating the GaN supervisor module, isolation module, and negative voltage driver module on the same GaN process platform significantly reduces the number and size of external components, improving system integration and compactness, and facilitating device miniaturization and thinness. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 Schematic diagram of existing gallium nitride power devices; Figure 2 for Figure 1 Schematic diagram of the gate waveform of the GaN power device; Figure 3 A negative voltage shutdown drive circuit for existing gallium nitride power devices; Figure 4 A schematic diagram of a gallium nitride power device structure provided by an embodiment of the present invention; Figure 5 A schematic diagram of a negative pressure generating module of a gallium nitride power device structure provided by an embodiment of the present invention; Figure 6 A schematic diagram of a negative pressure generating module of a gallium nitride power device structure provided by another embodiment of the present invention; Figure 7 A schematic diagram of an isolation module, a negative voltage driving module, and a gallium nitride main module of a gallium nitride power device structure provided by another embodiment of the present invention; Figure 8 A schematic diagram of an isolation module of a gallium nitride power device structure provided by another embodiment of the present invention; Figure 9 A schematic diagram of an isolation module, a negative voltage driving module, and a gallium nitride main module of a gallium nitride power device structure provided by another embodiment of the present invention; Figure 10 A schematic diagram of a first ESD protection module, a second ESD protection module, and a third ESD protection module of a gallium nitride power device structure provided by another embodiment of the present invention; Figure 11 for Figure 10 Schematic diagram of the measured waveform of a gallium nitride power device structure. DETAILED DESCRIPTION

[0020] The current methods to suppress the false start of GaN power devices include optimizing the PCB layout and reducing the parasitic parameters of the PCB layout wiring; using surface mount packaging or substrate packaging to reduce the parasitic parameters of the device itself; and using an external negative voltage generating circuit to generate a negative voltage shutdown signal, such as Figure 3As shown, the negative voltage generating circuit generates negative voltage when the gate of the GaN device is turned off through the principle of voltage difference and the voltage across the capacitor cannot suddenly change. The typical gate driving voltage of the GaN device is 6V. The driving voltage of the negative voltage generating circuit needs to be higher than 6V to form a voltage difference, typically 12V, and the constructed negative voltage generating circuit needs to use resistors, capacitors, diodes, etc. Although the negative voltage generated at the gate can be seen from the outside, the device packaging will introduce parasitic inductance, so the gate signal at the internal terminal of the device still has certain oscillations, and the ability to suppress di / dt interference is limited. The above methods have a certain inhibitory effect on the voltage oscillation of the gate loop of the gallium nitride power device to a certain extent, but they are all based on the optimization of the application end of the gallium nitride power device. Therefore, in order to generate a negative voltage shutdown signal near the internal gate of the GaN device and improve the usability of the GaN device, the present invention provides a gallium nitride power device structure.

[0021] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0022] It should be understood that as used herein, terms such as "first" and "second" describe various elements, components, regions, layers and / or sections, and these elements, components, regions, layers and / or sections should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer or section from another element, component, region, layer or section. For example, terms such as "first" and "second" do not imply a sequence or order when used herein unless the context clearly indicates. For ease of description, spatially relative terms such as "upper" and "lower" may be used herein to describe the relationship of one element or feature to other elements or features as shown in the accompanying drawings. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientations shown in the accompanying drawings.

[0023] In this application, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediate medium; internal communication between two elements, or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0024] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory. It should be noted that the terms "including" and "having" and their variations involved in this application are intended to cover non-exclusive inclusions.

[0025] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention and are not to be construed as limiting the present invention.

[0026] The present invention provides a gallium nitride power device structure, such as Figure 4 Shown, including: Negative pressure generating module 100, isolation module 200, negative pressure driving module 300, GaN main module 400; The first output end of the negative pressure generating module 100 is connected to the first input end of the isolation module 200 and the first input end of the negative pressure driving module 300, and the second output end of the negative pressure generating module 100 is connected to the second input end of the negative pressure driving module 300; the first output end of the negative pressure driving module 300 is connected to the second input end of the isolation module 200 and the control end of the gallium nitride supervisor module 400, and the second output end of the negative pressure driving module 300 is connected to the source end of the gallium nitride supervisor module 400. The isolation module 200, the negative pressure driving module 300, and the gallium nitride supervisor module 400 are integrated and manufactured based on the same gallium nitride process platform; The negative pressure generating module 100 obtains a first driving signal. When the first driving signal changes from a high level to a low level, the first output terminal of the negative pressure generating module 100 changes to a low level, and the second output terminal of the negative pressure generating module 100 generates a negative pressure shutdown signal. The negative pressure driving module 300 drives the isolation module 200 based on the negative pressure shutdown signal to isolate the gallium nitride main module 400 from the first driving signal, thereby driving the gallium nitride main module 400 to shut down.

[0027] Specifically, in an embodiment of the present invention, the GaN supervisor module 400, the isolation module 200, and the negative voltage driver module 300 are integrated on a single chip based on the same GaN process platform. Compared to the existing method of building an additional negative voltage circuit, this eliminates the parasitic inductance caused by the wiring connections between components, reduces the oscillation generated by the control-end loop of the GaN supervisor module 400, and better suppresses the erroneous start-up of the GaN power device.

[0028] In the embodiment of the present invention, the negative pressure generating module 100 includes a first capacitor C 101 , the first capacitor C 101 One end is used to obtain the first driving signal and is connected to the first input end of the isolation module 200 and the first input end of the negative pressure driving module 300. The first capacitor C 101 The other end is connected to the second input end of the negative pressure driving module 300; When the first driving signal obtained by the negative pressure generating module 100 changes from a high level to a low level, the first capacitor C 101 The voltage cannot suddenly change, and it takes a certain amount of time to discharge. During this process, the first capacitor C 101 One end of the first capacitor C 101 The other end of the capacitor C 101 A negative voltage shutdown signal is generated at the other end of the GaN supervisor module 400. The negative voltage shutdown signal clamps the voltage at the control end of the GaN supervisor module 400 to a negative voltage value, causing the GaN supervisor module 400 to be shut down. This generates a negative pressure inside the GaN power device structure, improves the usability of the GaN power device, and avoids the GaN power device from being mistakenly turned on when the oscillation voltage generated in the control end circuit of the GaN supervisor module 400 exceeds the threshold voltage of the GaN supervisor module 400 at the moment of shutdown in a large di / dt scenario, thereby avoiding burning of the GaN power device or even system failure.

[0029] In the embodiment of the present invention, the first capacitor C 101 It is a type of P-type gallium nitride junction capacitor or a flat plate capacitor.

[0030] In the embodiment of the present invention, Figure 5 As shown, the negative pressure generating module 100 further includes a first opening resistor R 101 and the first off resistor R 102 The first turn-on resistor R 101 One end is used to obtain the first driving signal, and the first turn-on resistor R 101 The other end of the first capacitor C 101One end of the isolation module 200, the first input end of the negative voltage driving module 300 are connected, and the first turn-off resistor R 102 One end of the first capacitor C 101 The other end is connected to the first off resistor R 102 The other end is connected to the second input end of the negative pressure driving module 300.

[0031] When the gallium nitride power device structure is applied, when the first driving signal is at a high level, the first turn-on resistor R 101 By adjusting the voltage divider ratio, the rising rate of the voltage at the control terminal of the GaN supervisor module 400 is precisely controlled, thereby adjusting the opening speed of the GaN supervisor module 400; when the first driving signal changes from a high level to a low level, the first turn-off resistor R 102 Limit current discharge.

[0032] In the embodiment of the present invention, the first capacitor C in the negative pressure generating module 100 101 , the first turn-on resistor R 101 The first off-resistance R 102 The isolation module 200 , the negative voltage driving module 300 , and the gallium nitride main module 400 are integrated, manufactured, and packaged into the gallium nitride power device structure based on the same gallium nitride process platform.

[0033] In the embodiment of the present invention, the first off resistor R 102 The first off-resistance R 102 It is a two-dimensional electron gas resistor or a metal film resistor.

[0034] Since the first capacitor C 101 A certain packaging area is required. In order to control the overall area of ​​the GaN power device structure, the negative pressure generating module 100 can also be set on an external PCB board and connected to the isolation module 200, the negative pressure driving module 300, and the GaN main module 400 through leads or wiring layers to form a GaN power device structure.

[0035] Furthermore, the isolation module 200, the negative pressure driving module 300, and the gallium nitride main module 400 are integrated and manufactured based on the same gallium nitride process platform, and then connected to the first capacitor C 101 , the first turn-on resistor R 101 The first off-resistance R 102 Integrated on the PCB board to form the gallium nitride power device structure, the first capacitor C 101 With the first turn-on resistor R 101 The first off-resistance R102 connected so that the first capacitor C 101 The first capacitor C 101 value and the first turn-on resistor R 101 and the first off resistance R 102 The resistance value is easy to adjust, and the overall area of ​​the gallium nitride power device structure is reduced.

[0036] In another embodiment, the first capacitor C 101 The first off-resistance R 102 The isolation module 200, the negative pressure driving module 300, and the gallium nitride main module 400 are integrated and manufactured based on the same gallium nitride process platform, and then integrated with the first turn-on resistor R 101 Integrated on the PCB board to form a gallium nitride power device structure.

[0037] In another embodiment of the present invention, Figure 6 As shown, the negative pressure generating module 100 further includes a second opening resistor R 103 and the second off resistor R 104 The second turn-on resistor R 103 One end is used to obtain the first driving signal and is connected to the first capacitor C 101 One end of the second turn-on resistor R 103 The other end is connected to the first input end of the negative pressure driving module 300 and the first input end of the isolation module 200, and the second off-resistance R 104 One end of the first capacitor C 101 The other end is connected to the second off resistor R 104 The other end is connected to the second input end of the negative pressure driving module 300.

[0038] When the gallium nitride power device structure is applied, when the first driving signal is at a high level, the second turn-on resistor R 103 By adjusting the voltage divider ratio, the rising rate of the voltage at the control terminal of the GaN supervisor module 400 is precisely controlled, thereby adjusting the opening speed of the GaN supervisor module 400; when the first driving signal changes from a high level to a low level, the second turn-off resistor R 104 Limit current discharge.

[0039] In the embodiment of the present invention, the first capacitor C in the negative pressure generating module 100 101 The second turn-on resistor R 103 The second off-resistance R 104The isolation module 200 , the negative voltage driving module 300 , and the gallium nitride main module 400 are integrated, manufactured, and packaged into the gallium nitride power device structure based on the same gallium nitride process platform.

[0040] In the embodiment of the present invention, the second turn-on resistor R 103 The second off-resistance R 104 It is a two-dimensional electron gas resistor or a metal film resistor.

[0041] Since the first capacitor C 101 A certain packaging area is required. In order to control the overall area of ​​the GaN power device structure, the negative pressure generating module 100 can also be set on an external PCB board and connected to the isolation module 200, the negative pressure driving module 300, and the GaN main module 400 through leads or wiring layers to form a GaN power device structure.

[0042] Furthermore, the isolation module 200, the negative pressure driving module 300, and the gallium nitride main module 400 are integrated and manufactured based on the same gallium nitride process platform, and then connected to the first capacitor C 101 The second turn-on resistor R 103 The second off-resistance R 104 Integrated on the PCB board to form the gallium nitride power device structure, so that the first capacitor C 101 The capacitance value and the second turn-on resistor R 103 and the second off resistance R 104 The resistance value is easy to adjust, and the overall area of ​​the gallium nitride power device structure is reduced.

[0043] In another embodiment, the first capacitor C 101 The second off-resistance R 104 The isolation module 200, the negative pressure driving module 300, and the gallium nitride main module 400 are integrated and manufactured based on the same gallium nitride process platform. 103 Integrated on the PCB board to form a gallium nitride power device structure.

[0044] In the embodiment of the present invention, Figure 7 As shown, the GaN supervisor module 400 includes a first GaN supervisor F 41 , the first GaN competent F 41 The gate is connected to the first input terminal of the isolation module 200 and the first output terminal of the negative voltage driving module 300, and the first gallium nitride main body F 41 The source terminal is connected to the second output terminal of the negative voltage driving module 300.

[0045] In the embodiment of the present invention, the first gallium nitride main body F 41 It is an enhancement-mode GaN device.

[0046] In the embodiment of the present invention, the GaN supervisor module 400 further includes a pull-down resistor R 401 , the pull-down resistor R 401 One end of the first gallium nitride head F 41 The gate is connected to the pull-down resistor R 401 The other end is connected to the first GaN head F 41 When the first driving signal is not output, the pull-down resistor R 401 The first GaN-based 41 The gate is pulled down so that the first GaN supervisor F 41 closure.

[0047] In the embodiment of the present invention, Figure 7 As shown, the negative voltage driving module 300 includes a first enhancement mode gallium nitride device F 31 , the second enhancement-mode gallium nitride device F 32 and the first current limiting resistor R 301 The first current limiting resistor R 301 One end is connected to the first output of the negative pressure generating module 100 and the first input end of the isolation module 200, and the first current limiting resistor R 301 The other end is connected to the first enhancement-mode gallium nitride device F 31 The drain of the first enhancement-mode gallium nitride device F 31 The gate of the second enhancement-mode gallium nitride device F 32 The source of the first enhancement-mode gallium nitride device F 31 The source of the second enhancement-mode gallium nitride device F 32 The gate of the GaN module 400 is connected to the source terminal of the GaN module 400, and the second enhancement-mode GaN device F 32 The drain is connected to the second input terminal of the isolation module 200 and the control terminal of the gallium nitride supervisor module 400; The isolation module 200 includes a first depletion-mode gallium nitride device F 21 , the first voltage divider resistor R 201 The first voltage divider resistor R 201 One end of the first depletion-mode gallium nitride device F 21 The drain of the negative voltage generating module 100, the first output of the negative voltage driving module 300 are connected, and the first voltage dividing resistor R 201 The other end is connected to the first depletion-mode GaN device F 21The gate of the first depletion-mode gallium nitride device F 21 The source electrode of the negative voltage driving module 300 is connected to the first output terminal of the negative voltage driving module 300, and the control terminal of the gallium nitride supervisor module 400; When the first driving signal is at a high level, the first depletion-mode gallium nitride device F 21 The voltage at the control end of the GaN supervisor module 400 follows the first driving signal, thereby offsetting the voltage at the control end of the GaN supervisor module 400 due to the first voltage divider resistor R 201 The presence of the first driving signal and the voltage difference between the control terminal of the GaN supervisor module 400 causes the GaN supervisor module 400 to turn on quickly; the first enhancement-mode GaN device F 31 The second enhancement-mode gallium nitride device F 32 The negative pressure generating module 100 is turned off, and the negative pressure generating module 100 is charged. Both ends of the negative pressure generating module 100 are high level and the gallium nitride main module 400 is turned on. 301 The other end and the first enhancement-mode gallium nitride device F 31 The gate of the first enhancement-mode gallium nitride device F is connected to 31 The gate current is too large, causing the first enhancement mode gallium nitride device F 31 damage; When the first driving signal changes from high level to low level, the first output terminal of the negative voltage generating module 100 changes to low level, and the second output terminal of the negative voltage generating module 100 changes to the first enhancement-mode gallium nitride device F 31 The first driving signal is subtracted from the turn-on voltage of the negative voltage generating module 100 so that the second output terminal of the negative voltage generating module 100 becomes a negative voltage, that is, a negative voltage shutdown signal is generated at the second output terminal of the negative voltage generating module 100. Based on the negative voltage shutdown signal, the first enhancement-mode gallium nitride device F 31 Turn off, the second enhancement-mode gallium nitride device F 32 Reverse conduction, the negative pressure shutdown signal is output to the isolation module 200 and the gallium nitride main module 400, based on the negative pressure shutdown signal, the first voltage divider resistor R of the isolation module 200 201 The first voltage dividing resistor R 201The divided voltage generated on the GaN supervisor module 400 turns off the second depletion-mode GaN device, isolating the GaN supervisor module 400 from the first drive signal. Based on the negative voltage shutdown signal, the control-end voltage of the GaN supervisor module 400 is clamped at a negative voltage value, turning off the GaN supervisor module 400. This generates a negative voltage at the control-end of the GaN supervisor module 400 within the GaN power device structure, thereby improving the usability of the GaN power device and avoiding the erroneous start-up of the GaN power device caused by the oscillation voltage generated by the control-end loop of the GaN supervisor module 400 exceeding the threshold voltage of the GaN supervisor module 400 at the moment of shutdown in a large di / dt scenario. This thereby avoids burning of the GaN power device or even system failure.

[0048] In another embodiment of the present invention, Figure 8 As shown, the isolation module 200 includes a second depletion-mode gallium nitride device F 22 , the third enhancement-mode gallium nitride device F 33 , the second voltage divider resistor R 202 The second voltage divider resistor R 202 One end of the second depletion-mode gallium nitride device F 22 The drain of the third enhancement-mode gallium nitride device F 33 The drain of the negative voltage generating module 100, the first output of the negative voltage driving module 300 are connected, and the second voltage dividing resistor R 202 The other end is connected to the second depletion-mode GaN device F 22 The gate of the third enhancement-mode gallium nitride device F 33 The gate of the negative voltage driving module 300 is connected to the first output terminal, and the second depletion-mode gallium nitride device F 22 The source of the third enhancement-mode gallium nitride device F 33 The source electrode, the control end of the gallium nitride supervisor module 400, and the first output end of the negative voltage driving module 300 are connected.

[0049] When the first driving signal is at a high level, the third enhancement-mode gallium nitride device F 33 The second depletion-mode GaN device F is turned on to control 22 The voltage at the control terminal of the GaN supervisor module 400 follows the first driving signal, thereby offsetting the voltage at the control terminal of the GaN supervisor module 400 due to the second voltage divider resistor R 202 The presence of causes a voltage difference between the first driving signal and the control terminal of the GaN supervisor module 400, so that the GaN supervisor module 400 is quickly turned on; When the first driving signal changes from a high level to a low level, the first output terminal of the negative pressure generating module 100 changes to a low level, the second output terminal of the negative pressure generating module 100 changes to a negative voltage, and a negative pressure shutdown signal is generated at the second output terminal of the negative pressure generating module 100. Based on the negative pressure shutdown signal output from the second output terminal of the negative pressure generating module 100, the first voltage divider resistor R 201 The first voltage divider resistor R 201 The voltage division generated on the third enhancement-mode gallium nitride device F 33 Turn off and control the second depletion-mode gallium nitride device F 22 The GaN supervisor module 400 is turned off to isolate the GaN supervisor module 400 from the first driving signal.

[0050] In another embodiment of the present invention, Figure 9 As shown, the negative voltage driving module 300 includes a fourth enhancement-mode gallium nitride device F 34 , the fifth enhancement-mode gallium nitride device F 35 , the sixth enhancement-mode gallium nitride device F 36 and the second current limiting resistor R 302 The second current limiting resistor R 302 One end of the negative pressure generating module 100 is connected to the first output and the first input of the isolation module 200, and the second current limiting resistor R 302 The other end is connected to the fourth enhancement mode gallium nitride device F 34 The drain of the fourth enhancement-mode gallium nitride device F 34 The gate of the fifth enhancement-mode gallium nitride device F 35 The source of the sixth enhancement-mode gallium nitride device F 36 The source of the fourth enhancement-mode gallium nitride device F 34 The source of the fifth enhancement-mode gallium nitride device F 35 The gate of the sixth enhancement-mode gallium nitride device F 36 The gate of the gallium nitride supervisor module 400 is connected to the source terminal, and the fifth enhancement-mode gallium nitride device F 35 The drain of the sixth enhancement-mode gallium nitride device F is connected to the second input terminal of the isolation module 200. 36 The drain of the negative voltage driving module 300 is connected to the third input terminal of the isolation module 200 as the third output terminal of the negative voltage driving module 300; The isolation module 200 includes a third depletion-mode gallium nitride device F 23 、The seventh enhancement-mode gallium nitride device F 37 , the third voltage divider resistor R 203 The third voltage divider resistor R 203One end of the third depletion-mode gallium nitride device F 23 The drain of the seventh enhancement-mode gallium nitride device F 37 The drain of the negative voltage generating module 100, the first output of the negative voltage driving module 300 are connected, and the third voltage dividing resistor R 203 The other end is connected to the third depletion-mode gallium nitride device F 23 The gate of the seventh enhancement-mode gallium nitride device F 37 The gate of the third depletion-mode gallium nitride device F is connected to the third output terminal of the negative voltage driving module 300 as the third input terminal of the isolation module 200. 23 The source of the seventh enhancement-mode gallium nitride device F 37 The source electrode, the control end of the gallium nitride supervisor module 400, and the first output end of the negative voltage driving module 300 are connected.

[0051] When the first driving signal is at a high level, the seventh enhancement-mode gallium nitride device F 37 Turn on, control the third depletion-mode gallium nitride device F 23 The voltage at the control terminal of the GaN supervisor module 400 follows the first driving signal, thereby offsetting the voltage at the control terminal of the GaN supervisor module 400 due to the third voltage divider resistor R 203 The presence of the first driving signal and the voltage difference between the control terminal of the GaN supervisor module 400 causes the GaN supervisor module 400 to turn on quickly; the fourth enhancement-mode GaN device F 34 The fifth enhancement-mode gallium nitride device F 35 , the sixth enhancement-mode gallium nitride device F 36 The negative pressure generating module 100 is turned off, and the negative pressure generating module 100 is charged. Both ends of the negative pressure generating module 100 are high level and the gallium nitride main module 400 is turned on. 302 The other end and the fourth enhancement-mode gallium nitride device F 34 connected to the gate of the fourth enhancement-mode gallium nitride device F 34 The gate current is too large, causing the fourth enhancement-mode gallium nitride device F 34 damage; When the first driving signal changes from high level to low level, the first output terminal of the negative voltage generating module 100 changes to low level, and the second output terminal of the negative voltage generating module 100 changes to the first enhancement-mode gallium nitride device F 31 The first driving signal is subtracted from the turn-on voltage of the negative voltage generating module 100, so that the second output terminal of the negative voltage generating module 100 becomes a negative voltage, that is, a negative voltage shutdown signal is generated at the second output terminal of the negative voltage generating module 100. Based on the negative voltage shutdown signal, the fourth enhancement-mode gallium nitride device F 34Turn off, the fifth enhancement-mode gallium nitride device F 35 , the sixth enhancement-mode gallium nitride device F 36 Reverse conduction, the negative pressure shutdown signal is output to the isolation module 200 and the gallium nitride main module 400, based on the negative pressure shutdown signal, the third voltage divider resistor R of the isolation module 200 203 The third voltage-dividing resistor R 203 The voltage divider generated on the third depletion-mode GaN device F 23 The GaN supervisor module 400 is shut down, isolating the GaN supervisor module 400 from the first drive signal; based on the negative voltage shutdown signal, the control terminal voltage of the GaN supervisor module 400 is clamped at a negative voltage value, shutting down the GaN supervisor module 400, thereby generating a negative voltage at the control terminal of the GaN supervisor module 400 within the GaN power device structure, improving the usability of the GaN power device, and avoiding the GaN power device from being mistakenly turned on when the oscillation voltage generated by the control terminal circuit of the GaN supervisor module 400 exceeds the threshold voltage of the GaN supervisor module 400 at the moment of shutdown in a large di / dt scenario, thereby avoiding the burning of the GaN power device or even system failure.

[0052] In the embodiment of the present invention, Figure 10 As shown, the gallium nitride power device structure further includes a first ESD protection module 501, a second ESD protection module 502 and a third ESD protection module 503. One end of the first ESD protection module 501 is connected to the control end of the gallium nitride supervisor module 400, and the other end of the first ESD protection module 501 is connected to the source end of the gallium nitride supervisor module 400; the second ESD protection module 502, one end of the second ESD protection module 502 is connected to the first input end of the isolation module 200 and the third input end of the negative pressure generating module 100. The first output terminal of the negative voltage generating module 100 and the second input terminal of the negative voltage driving module 300 are connected to the second ESD protection module 502, and the other end of the second ESD protection module 502 is connected to the source terminal of the GaN main module 400; the third ESD protection module 503, one end of the third ESD protection module 503 is connected to the second output terminal of the negative voltage generating module 100 and the second input terminal of the negative voltage driving module 300, and the other end of the third ESD protection module 503 is connected to the source of the GaN main module 400, so as to protect the GaN power device structure when an electrostatic discharge (ESD) event occurs in the GaN power device structure.

[0053] In other embodiments, the gallium nitride power device structure includes one or two of the first ESD protection module, the second ESD protection module, and the third ESD protection module.

[0054] In the embodiment of the present invention, Figure 11As shown, Figure 10 The measured waveform diagram of the gallium nitride power device structure shown in the figure shows that the function of the gallium nitride power device structure provided by the present application is normal, and when the high level of the gallium nitride power device structure changes to a low level (that is, the gallium nitride power device structure is turned off), the first gallium nitride main pipe F 41 The lowest voltage of the negative voltage turn-off signal generated near the gate of the GaN power device is about -3.7V, indicating that the GaN power device structure is a GaN power device structure with a built-in negative voltage. When the first driving signal changes from a high level to a low level, the first GaN main electrode F inside the GaN power device structure is realized. 41 The negative voltage is generated near the gate of the GaN device, which improves the usability of the GaN power device and avoids the first GaN main F in the case of large di / dt. 41 The gate loop generates an oscillating voltage that exceeds the first GaN lead F 41 When the threshold voltage is exceeded, the GaN power device is mistakenly turned on, thereby avoiding the burning of the GaN power device and even system failure.

[0055] An embodiment of the present invention further provides a gallium nitride power device structure, including: A negative pressure generating module 100 and a gallium nitride power device IC; the gallium nitride power device IC includes an isolation module 200, a negative pressure driving module 300, and a gallium nitride supervisor module 400. The first output end of the negative pressure generating module 100 is connected to the first input end of the isolation module 200 and the first input end of the negative pressure driving module 300, and the second output end of the negative pressure generating module 100 is connected to the second input end of the negative pressure driving module 300; the first output end of the negative pressure driving module 300 is connected to the second input end of the isolation module 200 and the control end of the gallium nitride supervisor module 400, and the second output end of the negative pressure driving module 300 is connected to the source end of the gallium nitride supervisor module 400. The gallium nitride power device IC is integrated and manufactured based on a gallium nitride process platform. The negative pressure generating module 100 obtains a first driving signal. When the first driving signal changes from a high level to a low level, the first output terminal of the negative pressure generating module 100 changes to a low level, and the second output terminal of the negative pressure generating module 100 generates a negative pressure shutdown signal. The negative pressure driving module 300 drives the isolation module 200 based on the negative pressure shutdown signal to isolate the gallium nitride main module 400 from the first driving signal, thereby driving the gallium nitride main module 400 to shut down.

[0056] Finally, it should be noted that any modification or equivalent replacement of part or all of the technical features based on the device structure of the present invention and the technical solutions of the embodiments, which does not deviate from the essence of the corresponding technical solutions of the present invention, falls within the patent scope of the device structure of the present invention and the implementation scheme.

Claims

1. A gallium nitride power device structure, characterized in that: include: Negative pressure generation module, isolation module, negative pressure drive module, gallium nitride main module; The first output end of the negative pressure generating module is connected to the first input end of the isolation module and the first input end of the negative pressure driving module, and the second output end of the negative pressure generating module is connected to the second input end of the negative pressure driving module; the first output end of the negative pressure driving module is connected to the second input end of the isolation module and the control end of the gallium nitride supervisor module, and the second output end of the negative pressure driving module is connected to the source end of the gallium nitride supervisor module. The isolation module, the negative pressure driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform; The negative pressure generating module obtains a first driving signal. When the first driving signal changes from a high level to a low level, the first output end of the negative pressure generating module changes to a low level, and the second output end of the negative pressure generating module generates a negative pressure shutdown signal. The negative pressure driving module drives the isolation module based on the negative pressure shutdown signal to isolate the gallium nitride supervisor module from the first driving signal, thereby driving the gallium nitride supervisor module to shut down.

2. A gallium nitride power device structure according to claim 1, characterized in that: The negative pressure generating module includes a first capacitor, one end of which is used to obtain a first driving signal and is connected to the first input end of the isolation module and the first input end of the negative pressure driving module, and the other end of the first capacitor is connected to the second input end of the negative pressure driving module.

3. A gallium nitride power device structure according to claim 2, characterized in that: The negative pressure generating module further includes a first on resistor and a first off resistor; One end of the first turn-on resistor is used to obtain a first drive signal, the other end of the first turn-on resistor is connected to one end of the first capacitor, the first input end of the isolation module, and the first input end of the negative voltage drive module, one end of the first turn-off resistor is connected to the other end of the first capacitor, and the other end of the first turn-off resistor is connected to the second input end of the negative voltage drive module.

4. A gallium nitride power device structure according to claim 3, characterized in that: The first capacitor, the first turn-on resistor, the first turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and packaged based on the same gallium nitride process platform to form the gallium nitride power device structure; or the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform, and then integrated with the first capacitor, the first turn-on resistor, and the first turn-off resistor on a PCB board to form the gallium nitride power device structure; or the first capacitor, the first turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform, and then connected with the first turn-on resistor to form the gallium nitride power device structure.

5. The gallium nitride power device structure according to claim 2, wherein: The negative pressure generating module also includes a second turn-on resistor and a second turn-off resistor; one end of the second turn-on resistor is used to obtain the first drive signal and is connected to one end of the first capacitor, the other end of the second turn-on resistor is connected to the first input end of the negative pressure driving module and the first input end of the isolation module, one end of the second turn-off resistor is connected to the other end of the first capacitor, and the other end of the second turn-off resistor is connected to the second input end of the negative pressure driving module.

6. A gallium nitride power device structure according to claim 5, characterized in that: The first capacitor, the first turn-on resistor, the first turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and packaged based on the same gallium nitride process platform to form the gallium nitride power device structure; or the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform, and then integrated with the first capacitor, the second turn-on resistor, and the second turn-off resistor on a PCB board to form the gallium nitride power device structure; the first capacitor, the second turn-off resistor, the isolation module, the negative voltage driving module, and the gallium nitride supervisor module are integrated and manufactured based on the same gallium nitride process platform, and then connected with the second turn-on resistor to form the gallium nitride power device structure.

7. The gallium nitride power device structure according to claim 1, wherein: The negative voltage driving module includes a first enhancement-mode gallium nitride device, a second enhancement-mode gallium nitride device, and a first current-limiting resistor; one end of the first current-limiting resistor is connected to the first output of the negative voltage generating module and the first input of the isolation module, and the other end of the first current-limiting resistor is connected to the drain of the first enhancement-mode gallium nitride device, the gate of the first enhancement-mode gallium nitride device, and the source of the second enhancement-mode gallium nitride device; the source of the first enhancement-mode gallium nitride device is connected to the gate of the second enhancement-mode gallium nitride device and the source terminal of the gallium nitride supervisor module; and the drain of the second enhancement-mode gallium nitride device is connected to the second input of the isolation module and the control terminal of the gallium nitride supervisor module.

8. The gallium nitride power device structure according to claim 1, wherein: The isolation module includes a first depletion-mode gallium nitride device and a first voltage-dividing resistor; one end of the first voltage-dividing resistor is connected to the drain of the first depletion-mode gallium nitride device, the first output of the negative voltage generating module, and the first input of the negative voltage driving module, and the other end of the first voltage-dividing resistor is connected to the gate of the first depletion-mode gallium nitride device, the source of the first depletion-mode gallium nitride device, the first output of the negative voltage driving module, and the control end of the gallium nitride supervisor module.

9. The gallium nitride power device structure according to claim 1, wherein: The isolation module includes a second depletion-mode gallium nitride device, a third enhancement-mode gallium nitride device, and a second voltage-dividing resistor; one end of the second voltage-dividing resistor is connected to the drain of the second depletion-mode gallium nitride device, the drain of the third enhancement-mode gallium nitride device, the first output of the negative voltage generating module, and the first input of the negative voltage driving module; the other end of the second voltage-dividing resistor is connected to the gate of the second depletion-mode gallium nitride device, the gate of the third enhancement-mode gallium nitride device, and the first output of the negative voltage driving module; the source of the second depletion-mode gallium nitride device is connected to the source of the third enhancement-mode gallium nitride device, the control end of the gallium nitride supervisor module, and the first output of the negative voltage driving module.

10. The gallium nitride power device structure according to claim 1, wherein: The negative voltage driving module includes a fourth enhancement-mode gallium nitride device, a fifth enhancement-mode gallium nitride device, a sixth enhancement-mode gallium nitride device, and a second current-limiting resistor; one end of the second current-limiting resistor is connected to the first output of the negative voltage generating module and the first input of the isolation module, and the other end of the second current-limiting resistor is connected to the drain of the fourth enhancement-mode gallium nitride device, the gate of the fourth enhancement-mode gallium nitride device, the source of the fifth enhancement-mode gallium nitride device, and the source of the sixth enhancement-mode gallium nitride device; the source of the fourth enhancement-mode gallium nitride device is connected to the gate of the fifth enhancement-mode gallium nitride device, the gate of the sixth enhancement-mode gallium nitride device, and the source of the gallium nitride main module; the drain of the fifth enhancement-mode gallium nitride device is connected to the second input of the isolation module; and the drain of the sixth enhancement-mode gallium nitride device, serving as the third output of the negative voltage driving module, is connected to the third input of the isolation module; The isolation module includes a third depletion-mode gallium nitride device, a seventh enhancement-mode gallium nitride device, and a third voltage-dividing resistor; one end of the third voltage-dividing resistor is connected to the drain of the third depletion-mode gallium nitride device, the drain of the seventh enhancement-mode gallium nitride device, the first output of the negative voltage generating module, and the first input of the negative voltage driving module; the other end of the third voltage-dividing resistor is connected to the gate of the third depletion-mode gallium nitride device, the gate of the seventh enhancement-mode gallium nitride device, and is connected to the third output of the negative voltage driving module as the third input of the isolation module; the source of the third depletion-mode gallium nitride device is connected to the source of the seventh enhancement-mode gallium nitride device, the control end of the gallium nitride supervisor module, and the first output of the negative voltage driving module.

11. The gallium nitride power device structure according to claim 1, wherein: It also includes a first ESD protection module, one end of which is connected to the control end of the gallium nitride supervisor module, and the other end of the first ESD protection module is connected to the source end of the gallium nitride supervisor module; or it also includes a second ESD protection module, one end of which is connected to the first input end of the isolation module and the first output end of the negative pressure generating module, and the other end of the second ESD protection module is connected to the source end of the gallium nitride supervisor module; or it also includes a third ESD protection module, one end of the third ESD protection module is connected to the second output end of the negative pressure generating module and the second input end of the negative pressure driving module, and the other end of the third ESD protection module is connected to the source end of the gallium nitride supervisor module.

12. The gallium nitride power device structure according to claim 1, wherein: The gallium nitride supervisor module includes a first gallium nitride supervisor, a gate of the first gallium nitride supervisor is connected to the first input end of the isolation module and the first output end of the negative voltage driving module, a source end of the first gallium nitride supervisor is connected to the second output end of the negative voltage driving module, and the first gallium nitride supervisor is an enhancement-mode gallium nitride device.

13. A gallium nitride power device structure, characterized in that: include: A negative pressure generating module and a gallium nitride power device IC; the gallium nitride power device IC includes an isolation module, a negative pressure driving module, and a gallium nitride supervisor module. The first output end of the negative pressure generating module is connected to the first input end of the isolation module and the first input end of the negative pressure driving module, and the second output end of the negative pressure generating module is connected to the second input end of the negative pressure driving module; the first output end of the negative pressure driving module is connected to the second input end of the isolation module and the control end of the gallium nitride supervisor module, and the second output end of the negative pressure driving module is connected to the source end of the gallium nitride supervisor module. The gallium nitride power device IC is integrated and manufactured based on a gallium nitride process platform. The negative pressure generating module obtains a first driving signal. When the first driving signal changes from a high level to a low level, the first output end of the negative pressure generating module changes to a low level, and the second output end of the negative pressure generating module generates a negative pressure shutdown signal. The negative pressure driving module drives the isolation module based on the negative pressure shutdown signal to isolate the gallium nitride supervisor module from the first driving signal, thereby driving the gallium nitride supervisor module to shut down.

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