Laser annealing method

Abstract

The invention provides a laser annealing method which is applied to the field of laser annealing. In the laser annealing method, according to position information of a gap and a protection area on a wafer, the gap and the protection area at different positions of a laser scanning path can be subjected to laser annealing; an annealing scanning path which is based on a linear (or arc-shaped) scanning mode and does not scan the area where the notch or the protection area on the wafer is located is respectively formulated, so that the phenomenon that laser beams hit the notch and the protection area due to the fact that a conventional scanning path carries out scanning exposure on each position or area in an exposure field is avoided; the problem that the lens of laser annealing equipment is polluted due to the fact that the suction cup at the notch position is polluted, the thermal stress at the notch position is increased and pollution particles are generated in a protection area is solved, namely, the performance of the wafer annealing process is improved.

Description

Technical Field

[0001] The present invention relates to the field of laser annealing, in particular to a laser annealing method. Background Art

[0002] In the existing laser annealing process, the wafer generally has a notch used to determine the annealing direction and a special area where annealing cannot be performed (also called a protection area). If the conventional scanning path is followed, the laser beam emitted by the laser will hit the notch and the special area, causing contamination of the suction cup at the notch position, increased thermal stress at the notch, and generation of contaminated particles in the special area, thereby contaminating the laser annealing equipment lens and affecting the product process. Summary of the Invention

[0003] The object of the present invention is to provide a laser annealing method to avoid the problems of suction cup contamination, wafer fragmentation and laser annealing equipment lens contamination caused by improper handling of non-annealing areas on the wafer during the laser annealing process.

[0004] To solve the above technical problems, the present invention provides a laser annealing method, which comprises at least the following steps:

[0005] Providing a wafer, wherein the wafer includes a non-annealed area, wherein the non-annealed area includes a protective area and / or a notch;

[0006] determining position information of the non-annealing area;

[0007] formulating an annealing scanning path for the wafer based on the position information to avoid the non-annealing area;

[0008] Laser scanning is performed according to the annealing scanning path to complete annealing of the wafer.

[0009] In some optional examples, formulating an annealing scanning path of the wafer based on the position information to avoid the non-annealing area includes:

[0010] determining, based on the position information, whether the non-annealing region is located at a middle position, a starting position, or an ending position of a laser scanning path;

[0011] Acquiring an exposure field passing through the non-annealing region, including at least one of a first exposure field, a second exposure field, and a third exposure field, wherein the non-annealing region is located at a starting position of a laser scanning path in the first exposure field, the non-annealing region is located at an ending position of the laser scanning path in the second exposure field, and the non-annealing region is located at a middle position of the laser scanning path in the third exposure field;

[0012] When the first exposure field is acquired, delaying the laser emission of the first exposure field by a first time to avoid the non-annealing area;

[0013] When the second exposure field is acquired, turning off the laser of the second exposure field in advance for a second time to avoid the non-annealing area;

[0014] When the third exposure field is acquired, the laser of the third exposure field is controlled to turn off the light when it reaches the non-annealing area and to emit the light again when it leaves the non-annealing area, or the third exposure field is divided into two scanning fields with the same scanning direction as the original laser according to the position of the non-annealing area to avoid the non-annealing area.

[0015] In some optional examples, the notch is located at the edge of the wafer, the position information of the notch includes the notch direction, the scanning mode of the laser scanning includes a linear scanning mode, and when the non-annealed area includes the notch, the determining whether the non-annealed area is located at the middle position, the starting position, or the ending position of the laser scanning path based on the position information includes:

[0016] Obtaining the linear scanning direction;

[0017] If the notch is oriented in the same direction as the linear scanning direction, the notch is located at the starting position of the laser scanning path;

[0018] If the notch is oriented opposite to the linear scanning direction, the notch is located at the end of the laser scanning path;

[0019] If the notch is oriented perpendicular to the linear scanning direction, the notch is located in the middle of the laser scanning path.

[0020] In some optional examples, the notch is located at the edge of the wafer, the position information of the notch includes the notch direction, the scanning mode of the laser scanning includes an arc scanning mode, and when the non-annealed area includes the notch, the determining whether the non-annealed area is located at the middle position, the starting position, or the ending position of the laser scanning path based on the position information includes:

[0021] Obtaining the arc scanning direction;

[0022] If the notch is parallel to the tangent direction of the arc scanning and forms an acute angle with the arc scanning direction, then the notch is located at the starting position of the laser scanning path;

[0023] If the notch is parallel to the tangent direction of the arc scanning and forms an obtuse angle with the arc scanning direction, the notch is located at the end position of the laser scanning path;

[0024] If the notch is perpendicular to the tangent direction of the arc scanning, the notch is located at the end position of the laser scanning path.

[0025] In some optional examples, the protection area is located inside the wafer, and when the non-annealing area includes the protection area, the protection area is located in the middle of the laser scanning path; the exposure field passing through the protection area includes the third exposure field.

[0026] In some optional examples, when the linear scanning method is selected, the preset conditions that the exposure field passing through the non-annealing area must meet include:

[0027] Field-PositionX j1 -(SpotSizeXj1) / 2 <NotchArea-X min ,and

[0028] Field-PositionX j1 +(SpotSizeX j1 ) / 2>NotchArea-X min ;or,

[0029] Field-PositionX j1 -(SpotSizeX j1 ) / 2 <NotchArea-X max ,and

[0030] Field-PositionX j1 +(SpotSizeX j1 ) / 2>NotchArea-X max ;or,

[0031] Field-PositionX j1 -(SpotSizeX j1 ) / 2>NotchArea-X min ,and

[0032] Field-PositionX j1 +(SpotSizeX j1 ) / 2 <NotchArea-X max ;

[0033] Among them, the Field-PositionX j1 is the coordinate of the center position of the exposure field j1 in the X direction, the SpotSizeX j1The NotchArea-X is the width of the laser spot in the X direction. min The minimum value of the boundary of the non-annealing area in the X direction, the NotchArea-X max is the maximum value of the boundary of the non-annealing area in the X direction.

[0034] In some optional examples, when the arc scanning method is used, the exposure field passing through the non-annealing area must meet the following preset conditions:

[0035] NotchPoint-ArcCenterPos-Distance(i)>ArcRudis-SpotSizeYj2, and

[0036] NotchPoint-ArcCenterPos-Distance(i) <ArcRudis

[0037] Wherein, the NotchPoint-ArcCenterPos-Distance(i) is the distance from a vertex of the non-annealing area to the center of the circle where the exposure site is located, the i is a vertex of the non-annealing area, and the value of i is 1, 2, 3 or 4, the SpotSizeX j2 is the width of the laser spot in the Y direction, and ArcRudis is the scanning radius of the exposure field.

[0038] In some optional examples, when screening the exposure field that passes through the non-annealing area in the arc scanning mode, the distance from the center of the exposure field to the non-annealing area is determined by the following formula:

[0039] D=sqrt{pow[(NotchPointX i -ArcCenterPosX j2 ),2]+pow[(NotchPointY i -ArcCenterPosY j2 ),2]}

[0040] Wherein, D is the NotchPoint-ArcCenterPos-Distance(i), i.e., the distance from the center of the circle where the exposure site is located to the non-annealing area, and the NotchPointX i The NotchPointY is the coordinate of a vertex of the non-annealing area in the X direction. iis the coordinate of a vertex of the non-annealing area in the Y direction, i is a vertex of the non-annealing area, j2 is an arc exposure field, the value of i is 1, 2, 3 or 4, the ArcCenterPosX j2 The ArcCebterPosY is the coordinate of the center of the circle where the arc exposure site is located in the X direction. j2 is the coordinate of the center of the circle where the arc exposure site is located in the Y direction.

[0041] In some optional examples, the calculation formulas for the first time and the second time are as follows:

[0042] Δt=(L1-L2) / Vscan

[0043] Wherein, Δt is the first time or the second time, L1 is the total length of the exposure field passing through the non-annealing area, L2 is the length of the exposure field excluding the non-annealing area it passes through, and Vscan is the scanning speed of the annealing scan.

[0044] In some optional examples, when the third exposure field is acquired, controlling the laser of the third exposure field to turn off when reaching the non-annealing area and to turn on again when leaving the non-annealing area includes:

[0045] When the laser reaches the starting position of the third exposure field, the laser emits light for the first time;

[0046] Turning off the light for the first time when the laser reaches the non-annealing area passing through the third exposure field;

[0047] Performing a second light emission when the laser leaves the non-annealing area;

[0048] Turning off the light for the second time when the laser reaches the end position of the third exposure field;

[0049] The first light-on time is Time-start(j), the first light-off time is Time-start(j)+[NotchArea(i)-min-max-Fielded-start] / Vscan, the second light-on time is Time-start(j)+[NotchArea(i)-max-min-Fielded-start] / Vscan, and the second light-off time is Time-end(j).

[0050] The NotchArea(i)-min-max is the minimum boundary value or the maximum boundary value of the non-annealing area in the scanning direction, the NotchArea(i)-max-min is the maximum boundary value or the minimum boundary value of the non-annealing area in the scanning direction, the Vscan is the scanning speed of the annealing scan, the value of j is j1 or j2, and the Field-start is the scanning start position of the exposure field j1 or the exposure field j2.

[0051] Compared with the prior art, the technical solution of the present invention has at least one of the following beneficial effects:

[0052] In the laser annealing method provided in an embodiment of the present invention, the method includes providing a wafer, the wafer including a non-annealing area, the non-annealing area including a protective area and / or a notch; obtaining position information of the non-annealing area; formulating an annealing scanning path for the wafer based on the position information to avoid the non-annealing area; and performing laser scanning according to the annealing scanning path to complete annealing of the wafer. In the present invention, based on the position information of the notch and the protective area on the wafer, a set of annealing scanning paths based on a linear (or arc) scanning method can be formulated for the notch and the protective area at different positions of the laser scanning path, and the annealing scanning paths will not scan the area where the notch or the protective area on the wafer is located. This avoids the problem that the conventional scanning path scans and exposes every position or area in the exposure field, causing the laser beam to hit the notch and the protective area, causing contamination of the suction cup at the notch position, increase of thermal stress at the notch, and generation of contaminated particles in the protective area, thereby contaminating the lens of the laser annealing equipment, thereby improving the performance of the wafer annealing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0054] Figure 1 Schematic diagram of an annealing scanning path for linear scanning of a wafer having a first notch 11 on its edge in the prior art;

[0055] Figure 2 Schematic diagram of an annealing scanning path for linear scanning of a wafer having a second notch 22 on its edge in the prior art;

[0056] Figure 3A schematic diagram of a scanning path of an annealing path for linearly scanning a wafer having a protection area 33 provided in the middle thereof in the prior art;

[0057] Figure 4 A schematic flow chart of a laser annealing method provided in one embodiment of the present invention;

[0058] Figure 5 A schematic structural diagram of a laser annealing device provided in one embodiment of the present invention;

[0059] Figure 6 Schematic diagram of a 0-degree wafer with a first notch 11 provided on the edge provided in one embodiment of the present invention;

[0060] Figure 7 Schematic diagram of a 90-degree wafer with a second notch 22 provided on the edge provided in one embodiment of the present invention;

[0061] Figure 8 A schematic diagram of an annealing scanning path corresponding to a linear scanning method for a wafer edge provided with a first notch 11 provided in an embodiment of the present invention;

[0062] Figure 9 A schematic diagram of an annealing scanning path corresponding to an arc scanning method for a wafer edge provided with a first notch 11 provided in an embodiment of the present invention;

[0063] Figure 10 for Figure 9 A partial enlarged view of the annealing scan path shown;

[0064] Figure 11 Schematic diagram of an annealing scanning path corresponding to a linear scanning method for a wafer edge provided with a second notch 22 provided in one embodiment of the present invention;

[0065] Figure 12 for Figure 11 A partial enlarged view of

[0066] Figure 13 for Figure 11 A partial enlarged view of

[0067] Figure 14 Schematic diagram of an annealing scanning path corresponding to an arc scanning method when a second notch 22 is provided on the edge of a wafer according to an embodiment of the present invention;

[0068] Figure 15 A schematic diagram of an annealing scanning path corresponding to a linear scanning method when a protection area is provided in the middle of a wafer provided in one embodiment of the present invention;

[0069] Figure 16 A schematic diagram of an annealing scanning path corresponding to an arc scanning method when a protective area is set at the middle position of a wafer provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0070] The following will clearly and completely describe the technical solutions of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0071] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0072] According to the prior art, the scanning methods performed by laser annealing equipment can be roughly divided into: linear scanning method and arc scanning method. The linear scanning method or arc scanning method can specifically be a scanning method of stepping motion along the X direction and moving up and down along the Y direction, or a scanning method of stepping motion along the Y direction and moving left and right along the X direction.

[0073] To simplify the description, the following describes in detail the laser annealing method provided in the embodiment of the present invention and its differences from the prior art by taking the linear scanning mode as being set to step motion along the Y direction and up and down motion along the X direction, and the arc scanning mode as being set to step motion along the Y direction and left and right motion along the X direction as an example.

[0074] See also Figures 1 to 3 , Figure 1 This is a schematic diagram of an annealing scanning path for performing linear scanning on an exposure field where a notch is located at the start or end position of the laser scanning path of the exposure field in the prior art. Figure 2 Schematic diagram of an annealing scanning path for performing linear scanning on an exposure field with a notch located in the middle of the laser scanning path of the exposure field in the prior art. Figure 3Schematic diagram of the scanning path of the annealing path in the prior art for performing linear scanning on an exposure field in which the protection area 33 is located in the middle of the laser scanning path of the exposure field.

[0075] according to Figure 1 and Figure 2 As shown, in the prior art, during the annealing scanning exposure process of a wafer with a notch, the laser beam will scan along the starting position to the ending position of each exposure field. During this process, the area where the notch is located will definitely be scanned, which will inevitably lead to the problem of local overtemperature in the notch where the stress release point exists, and excessive thermal stress causing the wafer to be fragmented. In addition, the laser light emitted by the laser will also pass through the notch and further scan the suction cup at the notch, thereby causing contamination of the suction cup at the notch, affecting the subsequent process technology of the wafer.

[0076] according to Figure 3 As shown, during the annealing scanning exposure process of the wafer with the protection area 33, the laser beam will scan along the starting position to the end position of each exposure field. During this process, the protection area will definitely be scanned, which will inevitably cause the local temperature of the protection area to rise and generate contamination particles, thereby causing contamination of the exposure lens of the laser annealing equipment.

[0077] In response to the above problems, the researchers of the present invention proposed a method for developing a set of annealing scanning paths that can avoid the notches and / or the protection areas based on the location information of the notches and protection areas on the wafer, as well as a laser annealing method including the annealing scanning paths.

[0078] The following will further describe in detail the laser annealing method provided by the present invention for the notches and protection areas at different positions on the wafer. Figure 4 To the attached Figure 16 The present invention will be described in more detail, wherein preferred embodiments of the present invention are shown. It should be understood that those skilled in the art may modify the present invention as described herein and still achieve the beneficial effects of the present invention. Therefore, the following description should be understood as a general guide for those skilled in the art and not as a limitation of the present invention.

[0079] It can be understood that the embodiment of the present invention refers to the special area located in the middle of the wafer that cannot be annealed as a protection area, and the protection area and the notch located at the edge of the wafer are collectively referred to as a non-annealing area, and the exposure field divided by the wafer when adopting the arc scanning method is referred to as an arc scanning field, and according to the different positions of the notch or the protection area on the wafer, the exposure fields divided by the wafer are defined as the first exposure field, the second exposure field and the third exposure field, wherein the notch and / or the protection area are located at the starting position of the laser scanning path in the first exposure field, the notch and / or the protection area are located at the end position of the laser scanning path in the second exposure field, and the notch and / or the protection area are located in the middle position of the laser scanning path in the third exposure field.

[0080] See also Figure 4 , Figure 4 FIG. 1 is a flow chart of a laser annealing method provided in one embodiment of the present invention, as shown in FIG. Figure 4 As shown, the laser annealing method may include at least the following steps:

[0081] Step S401, providing a wafer, wherein the wafer includes a non-annealed area, and the non-annealed area includes a protection area and / or a notch;

[0082] Step S402, obtaining position information of the non-annealing area;

[0083] Step S403, formulating an annealing scanning path for the wafer based on the position information to avoid the non-annealing area;

[0084] Step S404 , performing laser scanning according to the annealing scanning path to complete annealing of the wafer.

[0085] See also Figure 5 , Figure 5 FIG. 1 is a schematic structural diagram of a laser annealing device provided in one embodiment of the present invention. Figure 5 As shown, the laser annealing device may include at least: a pre-alignment stage 10, a workpiece stage 20, a laser including an exposure lens 30, and a control system; wherein,

[0086] The pre-alignment stage 10 is specifically used to carry a wafer and rotate the wafer to a specified angle to achieve pre-alignment of the wafer, wherein the wafer has a non-annealing area, and the non-annealing area includes a notch and / or a protective area.

[0087] The workpiece stage 20 is specifically used to carry the wafer after angle adjustment (or pre-alignment).

[0088] The laser including the exposure lens 30 is specifically used to emit a laser beam using the exposure lens 30 , and the laser beam is projected onto the workpiece stage 20 to form a light spot.

[0089] The control system is specifically used to execute the laser annealing method proposed in the embodiment of the present invention.

[0090] At present, a notch is usually opened on the edge of the wafer along its circumference, and a protective area may also be set in other areas of the wafer. The notch on the wafer is specifically used to ensure whether there is any problem with the annealing scanning direction subsequently performed on the wafer, that is, it plays a role in identifying the annealing scanning direction, and the protective area on the wafer is an area with special functions. For example, the protective area can be an area that supports the wafer, or can be an area with a specific material or semiconductor structure.

[0091] In order to simplify the description, in some of the drawings provided in the specification of the present invention, only one notch is set on the edge of the wafer by way of example, and the notch is a triangle with an opening facing outward away from the center of the wafer, a height of 2 mm, and a base of 2 mm; and in other parts of the drawings provided in the specification of the present invention, only three protection areas are set on the non-edge of the wafer by way of example, and the shape of the protection area is a regular quadrilateral.

[0092] In this embodiment, for the wafer with the notch and / or the protection area, it is necessary to pre-align the wafer according to the notch. Specifically, the wafer can be pre-aligned from a wafer library (such as Figure 5 Find the wafer to be annealed in the cassette 1 or cassette 2 shown in FIG. Figure 5 The pre-alignment stage 10 is shown, and then the detection part located above the pre-alignment stage 10, such as CCD, is turned on, and light is irradiated to the pre-alignment stage 10. When the light source is received by the sensor under the wafer carried on the pre-alignment stage 10, it can be determined that this is the position of the notch. Then, the wafer is rotated so that the notch on the wafer is located in a specific direction. After that, the rotated wafer is placed on the workpiece table 20 for subsequent annealing treatment.

[0093] Wherein, the specific direction includes a first direction having an angle of 0 degrees with the Y direction of the rectangular coordinate system where the wafer is located and a second direction having an angle of 90 degrees with the Y direction of the rectangular coordinate system where the wafer is located (or an angle of 0 degrees with the X direction of the rectangular coordinate system). Exemplarily, the present invention defines the notch located in the first direction as a first notch, such as Figure 6As shown in 11, the boundary value of the area corresponding to the first notch on the wafer and the notch direction are defined as the position information of the first notch, and the wafer with the first notch 11 on the edge is called a 0-degree top wafer, and the notch located in the second direction of the wafer is defined as a second notch, as shown in Figure 7 As shown in 22 , the boundary value of the area corresponding to the second notch on the wafer and the notch direction are defined as the position information of the second notch 22 , and the wafer with the second notch 22 on the edge is called a 90-degree wafer.

[0094] The following will introduce different annealing scanning paths proposed by the present invention respectively for the first notch, the second notch, and the protection area with different notch positions on the wafer.

[0095] Example 1

[0096] See Figure 8 , Figure 8 Schematic diagram of an annealing scanning path when a linear scanning method is performed on a 0-degree wafer with a first notch 11 on its edge provided in one embodiment of the present invention.

[0097] Specifically, for a wafer having a first notch 11 on its edge, the laser annealing method provided in one embodiment of the present invention may include the following steps:

[0098] In step S1 , a wafer is provided. The wafer includes a first notch 11 formed at an edge of the wafer.

[0099] Step S2: determining the position information of the first notch 11 .

[0100] In this step, the size of the notch on the wafer is specified, and due to the problem of light diffraction, the size of the area where the notch is located needs to be set larger than its actual size, such as a rectangular area. Based on this, the position information of the first notch 11 set at the edge of the wafer can be determined by obtaining the configuration data of the wafer. Specifically, the position information includes the length and width of the area (rectangular area) corresponding to the first notch 11 and the minimum and maximum values ​​of the area in the X and Y directions.

[0101] As an example, Figure 8 As shown, the area corresponding to the first notch 11 can be set as a rectangular area 111, and the width NotchSize-Y of the rectangular area 111 is set to 2 mm, the length NotchSize-X is set to 2 mm, and the radius of the wafer provided with the first notch 11 is set to Rwafer.

[0102] Under this setting, the center position coordinates (NotchArea-sCenterPos-X, NotchArea-sCenterPos-Y) of the rectangular area 111 corresponding to the first notch 11 can be specifically: {0, -(Rwafer-NotchSize-Y / 2)}; and the minimum boundary value of the rectangular area 111 in the X direction is: NotchArea-X min =NotchArea-sCenterPos-X-(NotchSize-X) / 2, the maximum value of the boundary of the rectangular area 111 in the X direction: NotchArea-X max =NotchArea-sCenterPos-X+(NotchSize-X) / 2; the minimum boundary value of the rectangular area 111 in the Y direction: NotchArea-Y min =NotchArea-sCenterPos-Y-(NotchSize-Y) / 2, the maximum value of the boundary of the rectangular area 111 in the Y direction: NotchArea-Y max =NotchArea-sCenterPos-Y+(NotchSize-Y) / 2.

[0103] The NotchArea is the rectangular area corresponding to the first notch, NotchArea-X max The maximum value of the boundary of the rectangular area corresponding to the first notch in the X direction, NotchArea-X min The minimum value of the boundary of the rectangular area corresponding to the first notch in the X direction, NotchArea-Y max The maximum value of the boundary of the rectangular area corresponding to the first notch in the Y direction: NotchArea-Y mi n It is the minimum boundary value of the rectangular area corresponding to the first gap in the Y direction.

[0104] Step S3 , formulating a linear scanning path for the wafer according to the position information of the first notch 11 to avoid the first notch 11 .

[0105] In this step, after determining the position information of the first notch 11, a straight scanning path or an arc scanning path of the wafer with the first notch 11 on the edge can be formulated according to different scanning methods. This embodiment 1 only introduces the straight scanning path of the wafer with the first notch 11 on the edge, and the arc scanning path of the wafer with the first notch 11 on the edge will be introduced in the following embodiment 2.

[0106] Specifically, the step of formulating a linear scanning path of the wafer having the first notch 11 provided on the edge thereof includes:

[0107] Step S3.1: Based on the position information of the first notch 11, determine whether the first notch 11 is located at the middle position, the starting position, or the ending position of the laser scanning path.

[0108] In this step, when linear scanning exposure is performed on the wafer with the first notch 11 on the edge, the wafer can be exemplarily divided into a plurality of exposure fields arranged in a step-by-step manner along the X direction. Then, the linear scanning direction of the exposure field when performing the linear scanning mode is obtained. If the orientation of the first notch 11 is the same as the linear scanning direction, it is determined that the first notch 11 is located at the starting position of the laser scanning path. If the orientation of the first notch 11 is opposite to the linear scanning direction, it is determined that the first notch 11 is located at the end position of the laser scanning path. If the orientation of the first notch 11 is perpendicular to the linear scanning direction, it is determined that the first notch 11 is located in the middle position of the laser scanning path.

[0109] As an example, based on Figure 8 The first gap 11 shown is specifically located at the starting position or the ending position of the laser scanning path of an exposure field. When the first gap 11 is located at the starting position of the laser scanning path of an exposure field, the exposure field is the first exposure field. When the first gap 11 is located at the ending position of the laser scanning path, the exposure field is the second exposure field.

[0110] Step S3.2: Acquire a first exposure field or a second exposure field passing through the first gap 11.

[0111] In this step, based on the determination method provided by the present invention, at least one first exposure field or second exposure field in which the laser spot passes through the rectangular area 111 corresponding to the first notch 11 during the exposure process performed in a linear scanning manner is screened out. Then, the scanning path of the screened out first exposure field or second exposure field is optimized so that the first notch 11 is not exposed. For the first exposure field or second exposure field that has not been screened out, exposure is performed in a conventional linear scanning manner, that is, scanning from the starting position of the first exposure field or the second exposure field to its ending position.

[0112] As an example, when performing a linear scanning mode, if the exposure field where the laser spot passes through the rectangular area 111 corresponding to the first notch 11 satisfies any one of the following three groups of conditions, the exposure field is screened out.

[0113] The first set of conditions: If the minimum boundary value of a certain exposure field j1 in the X direction is less than the minimum boundary value of the rectangular area 111 corresponding to the first gap 11 in the X direction, and its maximum boundary value in the X direction is greater than the minimum boundary value of the rectangular area 111 corresponding to the first gap 11 in the X direction, that is, Field-PositionX j1 -(SpotSizeX j1 ) / 2 <NotchArea-X min And Field-PositionX j1 +(SpotSizeX j1 ) / 2>NotchArea-X min , it means that the exposure field j1 partially overlaps with the left part of the rectangular area 111 corresponding to the first gap 11;

[0114] The second set of conditions: If the maximum value of the boundary of a certain exposure field j1 in the X direction is greater than the maximum value of the boundary of the rectangular area 111 corresponding to the first gap 11 in the X direction, and its maximum value of the boundary in the X direction is less than the maximum value of the boundary of the rectangular area 111 corresponding to the first gap 11 in the X direction, that is, Field-PositionX j1 -(SpotSizeX j1 ) / 2 <NotchArea-X max , and Field-PositionX j1 +(SpotSizeX j1 ) / 2>NotchArea-X max , it means that the exposure field j1 partially overlaps with the right side of the rectangular area 111 corresponding to the first notch 11;

[0115] The third set of conditions is that if the minimum boundary value of a certain exposure field j1 in the X direction is greater than the minimum boundary value of the rectangular area 111 corresponding to the first gap 11 in the X direction, and its maximum boundary value in the X direction is less than the maximum boundary value of the rectangular area 111 corresponding to the first gap 11 in the X direction, that is, Field-PositionX j1 -(SpotSizeX j1 ) / 2>NotchArea-X min , and Field-PositionX j1 +(SpotSizeX j1 ) / 2 <NotchArea-X max , it means that a part of the exposure field j1 along the Y direction completely overlaps with the rectangular area 111 corresponding to the first notch 11 in the X direction.

[0116] Specifically, in the above three groups of conditions, the Field-PositionX j1 is the coordinate of the center position of the exposure field j1 in the X direction, the SpotSizeX j1 The NotchArea-X is the width of the laser spot emitted by the laser in the X direction when scanning and exposing the exposure field j1. min is the minimum value of the boundary of the rectangular area 111 corresponding to the first notch 11 in the X direction, the NotchAr ea-X max is the maximum value of the boundary of the rectangular area 111 corresponding to the first notch 11 in the X direction.

[0117] Step S3.3, when the first exposure field is obtained, the laser light output of the first exposure field is delayed for a first time to avoid the rectangular area 111 corresponding to the first gap 11, and when the second exposure field is obtained, the laser light output of the second exposure field is advanced for a second time to avoid the rectangular area 111 corresponding to the first gap 11.

[0118] In this step, after screening out which exposure fields have the laser beam spot passing through the rectangular area 111 corresponding to the first notch 11, the exposure time (i.e., the first time) required for scanning and exposing the exposure field can be calculated if the rectangular area 111 corresponding to the first notch 11 is scanned. Then, the exposure time is adjusted according to whether the rectangular area 111 corresponding to the first notch 11 is located at the screened start position or end position. For other exposure fields that have not been screened out, they are exposed according to the preset exposure time, wherein the preset exposure time may specifically include a preset exposure start time and a preset exposure end time.

[0119] Specifically, if the rectangular area 111 corresponding to the first notch 11 is located at the exposure starting position of the screened exposure field, that is, the exposure field screened at this time is the first exposure field, then when the first exposure field is linearly scanned, the light emission time of the laser can be delayed for a period of time, and the delayed time is the exposure time (that is, the first time) required to expose the rectangular area 111 corresponding to the first notch 11, that is, the preset exposure start time of the first exposure field with the rectangular area 111 corresponding to the first notch 11 as the exposure starting position is added to the first time. It can also be understood as: when the workpiece stage drives the wafer with the first notch 11 on the edge to avoid the rectangular area 111 corresponding to the first notch 11 along the Y direction, the wafer after removing the rectangular area 111 corresponding to the first notch 11 from the first exposure field is scanned up and down for exposure.

[0120] If the rectangular area 111 corresponding to the first notch 11 is located at the end position of the screened exposure field, that is, the exposure field screened at this time is the first exposure field, then when performing a linear scan on the second exposure field, the laser light emission time can be ended in advance for a period of time, and the advanced time is the exposure time required to expose the rectangular area 111 corresponding to the first notch 11 (that is, the second time), that is, the preset exposure end time of the second exposure field with the rectangular area 111 corresponding to the first notch 11 as the exposure end position is subtracted from the second time.

[0121] As an example, if the preset exposure start time is Time-start, the preset exposure end time is Time-end, the first time or the second time is Δt, the total length of the first exposure field or the second exposure field of the laser spot passing through the rectangular area 111 corresponding to the first notch 11 along the Y direction is L1, and the length of the first exposure field or the second exposure field after removing the rectangular area 111 corresponding to the first notch 11 it passes through is L2, then, the first time or the second time Δt = (L1-L2) / Vscan, wherein L2 = NotchSize-Y, NotchSize-Y is the width of the rectangular area 111 corresponding to the first notch 11, and Vscan is the scanning speed of the workpiece stage 20 for annealing scanning.

[0122] Step S4 , performing laser scanning along the linear scanning path to complete annealing of the wafer.

[0123] The following will introduce the scanning path corresponding to the arc scanning method when the wafer with the first notch 11 on the edge is scanned.

[0124] Example 2

[0125] Specifically, the laser annealing method for the wafer having the first notch 11 provided on the edge thereof may include the following steps:

[0126] In step S1 , a wafer is provided. The wafer includes a first notch 11 formed at an edge of the wafer.

[0127] Step S2: determining the position information of the first notch 11 .

[0128] In this step, the method of determining the position information of the first notch 11 is the same as that in the first embodiment, and will not be repeated here.

[0129] Step S3 , formulating an arc-shaped scanning path for the wafer according to the position information of the first notch 11 to avoid the first notch 11 .

[0130] In this step, it can be determined whether the first gap 11 is located at the middle position, starting position or end position of the laser scanning path of the arc exposure field based on the orientation of the first gap 11, and then at least one arc exposure field passing through the first gap 11 is screened out, and different arc scanning paths are set for it based on the position of the first gap in the arc exposure field.

[0131] As an example, the step of determining whether the first notch 11 is located at the middle position, the starting position, or the ending position of the laser scanning path of the arc-shaped exposure field according to the orientation of the first notch 11 includes:

[0132] Obtain the arc scanning direction of the arc exposure field. If the direction of the first notch 11 is parallel to the tangent direction of the arc scanning and the angle between the first notch 11 and the arc scanning direction is an acute angle, then the first notch 11 is located at the starting position of the laser scanning path. At this time, the arc exposure field passing through the first notch 11 is the first exposure field. If the direction of the first notch 11 is parallel to the tangent direction of the arc scanning and the angle between the first notch 11 and the arc scanning direction is an obtuse angle, then the first notch 11 is located at the end position of the laser scanning path. At this time, the arc exposure field passing through the first notch 11 is the second exposure field. If the direction of the first notch 11 is perpendicular to the tangent direction of the arc scanning, then the first notch 11 is located in the middle position of the laser scanning path. At this time, the arc exposure field passing through the first notch 11 is the third exposure field.

[0133] Furthermore, when the arc scanning method is adopted, if the arc exposure field passing through the first gap 11 is the first exposure field, the annealing scanning path formulated is to delay the laser emission of the first exposure field by a first time to avoid the first gap 11; if the arc exposure field passing through the first gap 11 is the second exposure field, the annealing scanning path formulated is to advance the laser shut-off of the second exposure field by a second time to avoid the first gap 11; if the arc exposure field passing through the first gap 11 is the third exposure field, the annealing scanning path formulated is to control the laser of the third exposure field to shut off when reaching the first gap 11 and to emit light again when leaving the first gap 11, or to divide the third exposure field into two scanning fields with the same original laser scanning direction according to the position of the rectangular area 111 corresponding to the first gap 11 to avoid the first gap 11.

[0134] For example, the present invention only uses Figures 9 and 10 As shown in the figure, the first notch 11 is located in the middle of the arc exposure field as an example, and the arc scanning path corresponding to the wafer with the first notch 11 on the edge when the arc scanning method is adopted is described in detail.

[0135] See also Figures 9 and 10 , Figure 9 FIG. 1 is a flow chart of a laser annealing method for a wafer having the first notch 11 provided on its edge according to an embodiment of the present invention. Figure 10 for Figure 9 A partial enlarged view of the annealing scan path is shown.

[0136] In this embodiment, when the first notch 11 is located in the middle position of the arc exposure field, that is, the exposure field obtained in this step S3 is the third exposure field, the arc scanning path can be formulated based on the method of increasing the number of on and off times of the laser (method one), or the arc scanning path can be formulated based on the method of redividing the screened arc exposure field and then increasing the arc exposure field (method two). The two implementation methods mentioned above will be introduced separately below.

[0137] Method 1: An arc scanning path is formulated based on increasing the number of times the laser is turned on and off. Specifically, the laser of the third exposure field is controlled to turn off when it reaches the rectangular area 111 corresponding to the first gap 11 and to emit light again when it leaves the rectangular area 111 corresponding to the first gap 11.

[0138] In this embodiment, when it is determined that a wafer is to be scanned and exposed using an arc scanning method, the wafer can be divided into a plurality of arc exposure fields arranged in a step-by-step manner along the Y direction. When performing specific exposure, each of the arc exposure fields adopts a left-to-right or right-to-left scanning method along the X direction. Then, it is necessary to screen out which arc exposure fields will pass through the rectangular area 111 corresponding to the first notch 11 during scanning exposure, and optimize the scanning paths of these arc exposure fields. For arc exposure fields that do not pass through the rectangular area 111 corresponding to the first notch 11, they are scanned left-to-right from the exposure start position to the exposure end position according to a conventional arc scanning method.

[0139] As an example, an embodiment of the present invention provides a specific method for determining which arc-shaped exposure fields will pass through the rectangular area 111 corresponding to the first notch 11 during exposure scanning. That is, first, a first distance from the center of the arc-shaped exposure field to the rectangular area 111 corresponding to the first notch 11 is determined. Specifically, the following formula can be used:

[0140] D1=sqrt{pow[(NotchPointX i -ArcCenterPosX j2 ),2]+pow[(NotchPointY i -ArcCenterPosY i2 ),2]}

[0141] Wherein, D1 is the first distance, NotchPointX i The NotchPointY is the coordinate of a vertex of the rectangular area 111 corresponding to the first notch 11 in the X direction. i is the coordinate of a vertex of the rectangular area 111 corresponding to the first notch 11 in the Y direction, i is a vertex of the rectangular area 111 corresponding to the first notch, j2 is an arc exposure field, the value of i is 1, 2, 3 or 4, the ArcCenterPosX j2 The ArcCenterPosY is the coordinate of the center of the circle where the arc exposure site is located in the X direction. j2 is the coordinate of the center of the circle where the arc exposure site is located in the Y direction.

[0142] As an example, the coordinates of the lower left vertex of the rectangular area 111 corresponding to the first notch 11 are: (NotchPointX1, NotchPointX1) = (NotchArea-X min , NotchArea-Y min ), the coordinates of the upper left vertex of the rectangular area 111 corresponding to the first notch 11 are: (NotchPointX2, NotchPointY2) = (NotchArea-X min , NotchArea-Y max ), the coordinates of the lower right vertex of the rectangular area 111 corresponding to the first notch 11 are: (NotchPointX3, NotchPointY3) = (NotchArea-X max ,NotchArea-Y min ), the coordinates of the upper right vertex of the rectangular area 111 corresponding to the first notch 11 are: (NotchPointX4, NotchPointY4) = (NotchArea-X max ,NotchArea-Y max ).

[0143] Then, it is determined whether the first distance D1 from the center of the arc-shaped exposure field to the rectangular area 111 corresponding to the first gap 11 satisfies the following formula:

[0144] ArcRudis-SpotSize_Y <D1<ArcRudis

[0145] If the conditions are met, it is determined that the arc exposure field will pass through the rectangular area 111 corresponding to the first notch 11 during scanning exposure. For this arc exposure field, the number of on-off times of the laser can be changed from the preset 2 times to 4 times. Specifically, for any arc exposure field that will pass through the rectangular area 111 corresponding to the first notch 11 during scanning exposure, the laser can be turned on for the first time at its original exposure start position while its original scanning direction remains unchanged, so that it emits a laser beam, i.e., emits light for the first time, to perform left and right scanning. Then, when scanning to the first notch 11, the laser can be turned on for the first time at its original exposure start position. 1 is at the position of the boundary maximum or boundary minimum of the rectangular area 111 corresponding to the first notch 11 in the X direction, the laser is turned off for the first time, that is, the light is turned off for the first time. Then, when the workpiece stage 20 drives the wafer to move to the position of the boundary minimum or boundary maximum of the rectangular area 111 corresponding to the first notch 11 in the X direction, the laser is turned on for the second time, that is, the light is emitted for the second time, so that it continues to emit laser spots until it reaches the exposure end position of the arc exposure field, and then the laser is turned off for the second time, that is, the light is turned off for the second time, so as to complete the four-time on-off laser annealing process for the arc exposure field.

[0146] Method 2: dividing the third exposure field into two scanning fields having the same scanning direction as the original laser according to the position of the rectangular area 111 corresponding to the first notch 11 .

[0147] In this step, the screened arc exposure field can be re-divided into two sub-arc exposure fields having the same scanning direction as the arc exposure field before re-division, and arc scanning exposure scans are performed on them in sequence.

[0148] Step S4 , performing laser scanning along the arc scanning path to complete annealing of the wafer.

[0149] It can be understood that the modification scanning of the laser on-off times of the screened arc exposure field in the first method can be specifically reflected by setting the exposure time, while the modification scanning of the screened arc exposure field by re-dividing the arc exposure field in the second method can be specifically reflected by setting the exposure start position and exposure end position of each sub-arc exposure field. A detailed introduction to this content is given in the following Example 3.

[0150] The following will introduce the annealing scanning path provided by the present invention when performing a linear scanning method on the wafer having the second notch 22 .

[0151] Example 3

[0152] See Figures 11 to 13 , Figure 11Schematic diagram of the annealing scanning path for a 90-degree upper wafer with a second notch 22 provided in one embodiment of the present invention when a linear scanning method is performed. Figure 12 for Figure 11 A partial enlarged view of the Figure 13 for Figure 11 A partial enlarged view of .

[0153] Specifically, for example Figure 7 For a wafer having the second notch 22 provided on its edge, the laser annealing method provided in one embodiment of the present invention may specifically include the following steps:

[0154] Step S1 : providing a wafer, wherein the second notch 22 is provided on the edge of the wafer.

[0155] Step S2: determining the position information of the second notch 22 .

[0156] In this step, the method for determining the position information of the second notch 22 is the same as the method for determining the position information of the first notch 11 , which is detailed in step S2 of the first embodiment and will not be repeated here.

[0157] Step S3 , formulating a linear scanning path for the wafer according to the position information of the second notch 22 to avoid the second notch 22 .

[0158] In this embodiment, similar to the wafer with the first notch 11 on its edge, the wafer with the second notch 22 on its edge can also perform both linear scanning and arc scanning exposure scanning. However, the difference from the wafer with the first notch 11 on its edge is that when the wafer with the second notch 22 on its edge performs linear scanning exposure scanning, for the exposure field where the laser spot passes through the rectangular area 222 corresponding to the second notch 22, the optimized scanning path is based on increasing the number of laser on-off times (method three) and redividing the screened exposure field to increase the exposure field (method four). For details, see this embodiment (embodiment three). When the wafer with the second notch 22 on its edge performs arc scanning exposure scanning, the optimized scanning path is adjusted according to whether the distance from the center of the arc exposure field to the rectangular area 222 corresponding to the second notch 22 meets a threshold. For details, see the following embodiment four.

[0159] Method three: Based on the rectangular area 222 corresponding to the second notch 22, the coordinates of the center position of the exposure field in the Y direction, and the width of the laser spot in the Y direction, it can be determined whether there is an exposure field in which the laser spot passes through the rectangular area 222 corresponding to the second notch 22 when a linear scanning method is adopted. If so, the number of on-off times of the laser when scanning the exposure field is modified; otherwise, each exposure field is scanned and exposed according to the preset on-off times of the laser.

[0160] In this step, the specific method of judging whether there is an exposure field in which the laser spot passes through the rectangular area 222 corresponding to the second notch 22 when the linear scanning method is adopted is the same as the method of determining whether the laser spot of the exposure field passes through the rectangular area 111 corresponding to the first notch 11 in Example 1, and will not be repeated here. For the exposure field in which the screened laser spot passes through the rectangular area 222 corresponding to the second notch 22, the method of modifying the number of on-off times of the laser is the same as Method 1 in Example 2, that is, the number of on-off times of the laser in the screened exposure field during scanning exposure is increased from 2 times to 4 times, while other unselected exposure fields still perform scanning exposure with the laser on-off number of 2 times.

[0161] Specifically, the on-off times of the laser are modified and scanned for the selected exposure fields, which can be specifically reflected by setting the exposure time.

[0162] As an example, for Figure 11 For the wafer with the second notch 22 at the edge shown, if the scanning direction of the exposure field j1 of the screened laser spot passing through the rectangular area 222 corresponding to the second notch 22 is from bottom to top, the time when the laser first emits light is the preset exposure start time Time-start, and the time when the laser first turns off light is: Time-start+(NotchArea-Y min -Field-start) / Vscan), the time for the laser to emit light for the second time is: Time-start+(NotchArea-Y max -Filed-start)) / Vscan.

[0163] As another example, for Figure 11 For a wafer with a second notch 22 at its edge, if the scanning direction of an exposure field j1 of the screened laser spot passing through the rectangular area 222 corresponding to the second notch 22 is from top to bottom, the time when the laser first emits light is the preset exposure start time Time-start, and the time when the laser first turns off light is: Time-start+(NotchArea-Y max-Field-start) / Vscan), the time when the laser emits light for the second time is: Time-start+(No tchArea-Y mix -Filed-start)) / Vscan, the second laser shut-off time is: Time-end.

[0164] The field-start is the exposure start position of the exposure field j1 where the screened laser spot passes through the rectangular area 222 corresponding to the second notch 22 .

[0165] Method 4: Based on the rectangular area 222 corresponding to the second notch 22, the coordinates of the center position of the exposure field in the Y direction, and the width of the laser spot in the Y direction, it can be determined whether there is an exposure field in which the laser spot passes through the rectangular area 222 corresponding to the second notch 22 when a linear scanning method is used. If so, the exposure field is divided into 2N sub-exposure fields, and the 2N sub-exposure fields are scanned and exposed according to the preset scanning direction before division. Otherwise, each exposure field is scanned and exposed according to the preset scanning direction, where N ≥ 1.

[0166] In this step, when a linear scanning method is adopted, the method for determining which exposure fields have laser spots passing through the rectangular area 222 corresponding to the second notch 22 is the same as the method for determining whether the laser spot of the exposure field passes through the rectangular area 111 corresponding to the first notch 11 in Example 1, and will not be repeated here. However, for the exposure fields in which the screened laser spots pass through the rectangular area 222 corresponding to the second notch 22, the method for modifying the redivision of the exposure fields is the same as Method 2 in Example 2, and will not be repeated here.

[0167] Specifically, the modified scanning for re-dividing the screened exposure field can be specifically reflected by setting the exposure start position and the exposure end position of each sub-exposure field.

[0168] As an example, for Figure 11 For the wafer shown in FIG1 , in which the second notch 22 is provided on the edge, if the scanning modes of the three exposure fields screened out are from bottom to top, from top to bottom, and from bottom to top, respectively, then after the exposure field is re-divided using the fourth method provided in this embodiment, six sub-exposure fields can be obtained, that is, each exposure field is specifically divided into two sub-exposure fields, and the two sub-exposure fields have the same scanning direction as the exposure field before re-division, that is, it can be as follows Figure 13 As shown, the exposure start position is: Field-start(1), and the exposure end position is NotchArea-Y min The first sub-exposure field of Figure 13Exposure field 1 in the exposure start position is: NotchArea-Y max , the exposure end position is the second sub-exposure field of Filed-end(1), that is, Figure 13 In the exposure field 2, the exposure start position is: Field-start(2), and the exposure end position is NotchArea-Y max The third sub-exposure field is Figure 13 Exposure field 3 in the exposure start position is: NotchArea-Y min , the exposure end position is the fourth sub-exposure field of Filed-end(2), that is, Figure 13 In the exposure field 4, the exposure start position is: Field-start(3), and the exposure end position is NotchArea-Y min The fifth exposure field is as follows Figure 13 Exposure field 5 in the exposure, the exposure starting position is: NotchArea-Y max , the exposure end position is the sixth sub-exposure field of Filed-end(3), that is, Figure 13 Exposure field 6 in.

[0169] Among them, the Fielded-start(1) to Fielded-start(3) are the exposure start positions of the three selected exposure fields before they are redivided, and the Fielded-end(1) to Fielded-end(3) are the exposure end positions of the three selected exposure fields before they are redivided.

[0170] The following will introduce the annealing scanning path provided by the present invention when performing arc scanning on a wafer having a second notch 22 on its edge.

[0171] See Figure 14 , Figure 14 Schematic diagram of an annealing scanning path when performing an arc scanning method on a wafer having the second notch 22 provided on its edge according to an embodiment of the present invention.

[0172] Specifically, the laser annealing method for the wafer having the second notch 22 provided on the edge thereof may include the following steps:

[0173] In step S1 , a wafer is provided. The wafer includes a second notch 22 opened at an edge.

[0174] Step S2: determining the position information of the second notch 22 .

[0175] In this embodiment, the method for determining the position information of the second notch 22 is the same as the method for determining the position information of the first notch 11 in the first embodiment, and will not be repeated here.

[0176] Step S3 , formulating an arc-shaped scanning path for the wafer according to the position information of the second notch 22 .

[0177] In this step, when the wafer with the second notch 22 on the edge is subjected to exposure scanning in an arc scanning manner, it can be screened out according to whether the second distance from the center of the circle where the arc exposure field is located to the rectangular area 222 corresponding to the second notch 22 meets the second threshold value, and then the arc exposure field that needs to change the laser exposure start time and exposure end time is optimized. Then, the scanning path is optimized for each screened arc exposure field.

[0178] As an example, based on the rectangular area 222 corresponding to the second notch 22, the coordinates of the center position of the arc exposure field in the Y direction, and the width of the laser spot in the Y direction, it can be determined whether there is an arc exposure field in which the second distance from the center of the circle to the rectangular area 222 corresponding to the second notch 22 does not meet the second threshold when the arc scanning method is adopted. If so, the exposure time for exposing the rectangular area 222 corresponding to the second notch 22 is determined, and the exposure time is used as the first time or the second time of the preset exposure time of the arc exposure field. The preset exposure time of the arc exposure field in which the second distance does not meet the second threshold is adjusted according to the first time or the second time, and the arc exposure field is exposed with the adjusted exposure time. Otherwise, each arc exposure field is scanned and exposed according to the preset exposure time.

[0179] In this step, based on the rectangular area 222 corresponding to the second notch 22, the coordinates of the center position of the arc exposure field in the Y direction, and the width of the laser spot in the Y direction, it is determined whether there is an arc exposure field in which the second distance from the center of the circle to the rectangular area 222 corresponding to the second notch 22 does not meet the second threshold when the arc scanning method is adopted. The specific implementation method is the same as the method for determining whether the first distance does not meet the first threshold in Example 2, and will not be repeated here.

[0180] Afterwards, after determining the arc exposure field whose exposure time needs to be adjusted based on the judgment, the first time can be added to the preset exposure start time of the arc exposure field with the rectangular area 222 corresponding to the second gap 22 as the starting position, or the second time can be subtracted from the preset exposure end time of the arc exposure field with the rectangular area 222 corresponding to the second gap 22 as the ending position. The calculation method of the first time and the second time is the same as the calculation method of the first time and the second time in Example 1, and will not be repeated here.

[0181] The following describes an optimized scanning path for a wafer with a protective region in the middle.

[0182] Example 5

[0183] See also Figure 15 and Figure 16 , Figure 15 Schematic diagram of an annealing scanning path when a linear scanning method is performed on a non-annealing area 333 on a wafer according to an embodiment of the present invention. Figure 16 A schematic diagram of an annealing scanning path corresponding to an arc scanning method when a protective area is set at the middle position of a wafer provided in an embodiment of the present invention.

[0184] Specifically, the laser annealing method for a wafer having a protection area provided in the middle may include the following steps:

[0185] In step S1 , a wafer is provided. The wafer includes at least one protection region 33 .

[0186] In this step, the area corresponding to the protection area 33 may also be a rectangular area.

[0187] Step S2: Determine the location information of the protection area 33.

[0188] In this step, the method of determining the position information of the protection area 33 is the same as the method of determining the rectangular area 111 corresponding to the first notch 11 in the first embodiment, and will not be repeated here.

[0189] Step S3 , formulating an annealing scanning path for the wafer according to the position information of the protection area 33 to avoid the protection area 33 .

[0190] In this step, when the wafer only includes the protection area 33, it can be scanned and exposed by either a linear scanning method or an arc scanning method. However, no matter whether it adopts a linear scanning method or an arc scanning method, it can only adopt the optimized scanning path scheme of modifying the number of times the laser is on and off during the exposure field scanning in method one, method two, or method three, and method four, and the optimized scanning path scheme of re-dividing the exposure field.

[0191] It should be noted that when an arc scanning method is performed on the wafer having the protection area 33, the method of screening which arc exposure fields need to be optimized for the scanning path is the same as the method one in the second embodiment, and will not be repeated here. When a linear scanning method is performed on the wafer having the non-annealing area 33, the method of screening which exposure fields need to be optimized for the scanning path is the same as the method of determining whether the laser spot passes through the exposure field of the first notch 11 in the first embodiment, and will not be repeated here.

[0192] It can be understood that in other embodiments, the wafer may have a first notch or a second notch opened at the edge and a protective area set in the middle position. In this case, the methods of optimizing the scanning path in the above-mentioned embodiments one to five can be combined in multiple ways to ensure that no matter how the scanning is performed, the rectangular area corresponding to the first notch, the second notch and the protective area will not be scanned and exposed.

[0193] In summary, the laser annealing method provided in an embodiment of the present invention includes providing a wafer, wherein the wafer includes a non-annealing area, wherein the non-annealing area includes a protective area and / or a notch; obtaining position information of the non-annealing area; based on the position information, formulating an annealing scanning path for the wafer to avoid the non-annealing area; and performing laser scanning according to the annealing scanning path to complete annealing of the wafer. In the present invention, according to the position information of the notch and the protective area on the wafer, a set of annealing scanning paths based on a linear (or arc) scanning method can be formulated for the notch and the protective area at different positions of the laser scanning path, and the annealing scanning paths will not scan the area where the notch or the protective area on the wafer is located. This avoids the problem that the conventional scanning path scans and exposes every position or area in the exposure field, causing the laser beam to hit the notch and the protective area, causing contamination of the suction cup at the notch position, increase of thermal stress at the notch, and generation of contaminated particles in the protective area, thereby contaminating the lens of the laser annealing equipment, thereby improving the performance of the wafer annealing process.

[0194] An embodiment of the present invention further provides an electronic device, comprising a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other via the communication bus.

[0195] Memory for storing computer programs;

[0196] The processor is configured to implement a laser annealing method or a photolithography method provided by an embodiment of the present invention when executing a program stored in the memory.

[0197] In addition, the implementation steps of the laser annealing method or the photolithography method implemented by the processor executing the program stored in the memory will not be repeated here.

[0198] The communication bus mentioned in the control terminal can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EIS) bus. This communication bus can be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, only one thick line is used in the figure, but this does not mean that there is only one bus or only one type of bus.

[0199] The communication interface is used for communication between the above electronic device and other devices.

[0200] The memory may include random access memory (RnM) or non-volatile memory (NVM), such as at least one disk memory. Optionally, the memory may also be at least one storage device located away from the aforementioned processor.

[0201] The above-mentioned processor can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGn) or other programmable logic devices, discrete gate or transistor logic devices, and discrete hardware components.

[0202] In another embodiment provided by the present invention, a computer-readable storage medium is also provided, which stores instructions. When the computer-readable storage medium is run on a computer, it enables the computer to execute the laser annealing method or photolithography method described in any of the above embodiments.

[0203] In the above embodiments, all or part of the embodiments can be implemented using software, hardware, firmware, or any combination thereof. When implemented using software, all or part of the embodiments can be implemented in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of the present invention are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via a wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) method. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that includes one or more available media. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive (SSD)).

[0204] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0205] Each embodiment in this specification is described in a related manner. Similar portions between the various embodiments can be referenced to each other. Each embodiment focuses on the differences between the other embodiments. In particular, the device, electronic device, and computer-readable storage medium embodiments are generally similar to the method embodiments, so their descriptions are relatively simple. For related portions, reference can be made to the descriptions of the method embodiments.

[0206] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention are included in the scope of protection of the present invention.

Claims

1. A laser annealing method, characterized in that: include: Providing a wafer, wherein the wafer includes a non-annealed area, wherein the non-annealed area includes a protective area and / or a notch; Acquiring position information of the non-annealing area; formulating an annealing scanning path for the wafer based on the position information to avoid the non-annealing area; Laser scanning is performed according to the annealing scanning path to complete annealing of the wafer.

2. The laser annealing method according to claim 1, wherein: Formulating an annealing scanning path for the wafer based on the position information to avoid the non-annealing area includes: determining, based on the position information, whether the non-annealing region is located at a middle position, a starting position, or an ending position of a laser scanning path; Acquiring an exposure field passing through the non-annealing region, including at least one of a first exposure field, a second exposure field, and a third exposure field, wherein the non-annealing region is located at a starting position of a laser scanning path in the first exposure field, the non-annealing region is located at an ending position of the laser scanning path in the second exposure field, and the non-annealing region is located at a middle position of the laser scanning path in the third exposure field; When the first exposure field is acquired, delaying the laser emission of the first exposure field by a first time to avoid the non-annealing area; When the second exposure field is acquired, turning off the laser of the second exposure field in advance for a second time to avoid the non-annealing area; When the third exposure field is acquired, the laser of the third exposure field is controlled to turn off the light when it reaches the non-annealing area and to emit the light again when it leaves the non-annealing area, or the third exposure field is divided into two scanning fields with the same scanning direction as the original laser according to the position of the non-annealing area to avoid the non-annealing area.

3. The laser annealing method according to claim 2, wherein: The notch is located at the edge of the wafer, the position information of the notch includes the notch direction, the scanning mode of the laser scanning includes a linear scanning mode, and when the non-annealed area includes the notch, the determining whether the non-annealed area is located at a middle position, a starting position, or an ending position of a laser scanning path based on the position information includes: Obtaining the linear scanning direction; If the notch is oriented in the same direction as the linear scanning direction, the notch is located at the starting position of the laser scanning path; If the notch is oriented opposite to the linear scanning direction, the notch is located at the end of the laser scanning path; If the notch is oriented perpendicular to the linear scanning direction, the notch is located in the middle of the laser scanning path.

4. The laser annealing method according to claim 2, wherein: The notch is located at the edge of the wafer, the position information of the notch includes the notch direction, the scanning mode of the laser scanning includes an arc scanning mode, and when the non-annealed area includes the notch, the determining whether the non-annealed area is located at a middle position, a starting position, or an ending position of a laser scanning path based on the position information includes: Obtaining the arc scanning direction; If the notch is parallel to the tangent direction of the arc scanning and forms an acute angle with the arc scanning direction, then the notch is located at the starting position of the laser scanning path; If the notch is parallel to the tangent direction of the arc scanning and forms an obtuse angle with the arc scanning direction, the notch is located at the end position of the laser scanning path; If the notch is perpendicular to the tangent direction of the arc scanning, the notch is located at the end position of the laser scanning path.

5. The laser annealing method according to claim 2, wherein: The protection area is located inside the wafer. When the non-annealing area includes the protection area, the protection area is located in the middle of the laser scanning path; the exposure field passing through the protection area includes the third exposure field.

6. The laser annealing method according to claim 3 or 5, characterized in that: When the linear scanning method is used, the exposure field that passes through the non-annealing area must meet the following preset conditions: Field_PositionX j1 -(SpotSizeX j1 ) / 2 <NotchArea_X min ,and Field_PositionX j1 +(SpotSizeX j1 ) / 2>NotchArea_X min ;or, Field_PositionX j1 -(SpotSizeX j1 ) / 2 < NotchArea_X max and Field_PositionX j1 +(SpotSizeX j1 ) / 2>NotchArea_X max ;or, Field_PositionX j1 -(SpotSizeX j1 ) / 2 > NotchArea_X min and Field_PositionX j1 +(SpotSizeX j1 ) / 2<NotchArea_X max ; Among them, the Field_PositionX j1 is the coordinate of the center position of the exposure field j1 in the X direction, the SpotSizeX j1 The NotchArea_X is the width of the laser spot in the X direction. min The NotchArea_X is the minimum value of the boundary of the non-annealing area in the X direction. max is the maximum value of the boundary of the non-annealing area in the X direction.

7. The laser annealing method according to claim 4 or 5, characterized in that: When the arc scanning method is used, the exposure field that passes through the non-annealing area must meet the following preset conditions: NotchPoint_ArcCenterPos_Distance(i)>ArcRudis_SpotSizeY j2 and NotchPoint_ArcCenterPos_Distance(i)<ArcRudis Wherein, the NotchPoint_ArcCenterPos_Distance(i) is the distance from a vertex of the non-annealing area to the center of the circle where the exposure site is located, the i is a vertex of the non-annealing area, and the value of i is 1, 2, 3 or 4, the SpotSizeY j2 is the width of the laser spot in the Y direction, and ArcRudis is the scanning radius of the exposure field.

8. The laser annealing method according to claim 7, wherein: When screening the exposure field passing through the non-annealing area using the arc scanning method, the distance between the center of the exposure field and the non-annealing area is determined by the following formula: D=sqrt{pow[(NotchPointX i -ArcCenterPosX j2 ),2]+pow[(NotchPointY i -ArcCenterPosY j2 ),2]} Wherein, D is the NotchPoint_ArcCenterPos_Distance(i), i.e., the distance from the center of the circle where the exposure site is located to the non-annealing area, and the NotchPointX i The NotchPointY is the coordinate of a vertex of the non-annealing area in the X direction. i is the coordinate of a vertex of the non-annealing area in the Y direction, i is a vertex of the non-annealing area, i2 is an arc exposure field, the value of i is 1, 2, 3 or 4, the ArcCenterPosX j2 The ArcCenterPosY is the coordinate of the center of the circle where the arc exposure site is located in the X direction. j2 is the coordinate of the center of the circle where the arc exposure site is located in the Y direction.

9. The laser annealing method according to claim 2, wherein: The calculation formulas for the first time and the second time are as follows: Δt=(L1-L2) / Vscan Wherein, Δt is the first time or the second time, L1 is the total length of the exposure field passing through the non-annealing area, L2 is the length of the exposure field excluding the non-annealing area it passes through, and Vscan is the scanning speed of the annealing scan.

10. The laser annealing method according to claim 2, wherein: When the third exposure field is acquired, controlling the laser of the third exposure field to turn off the light when reaching the non-annealing area and to turn on the light again when leaving the non-annealing area includes: When the laser reaches the starting position of the third exposure field, the laser emits light for the first time; Turning off the light for the first time when the laser reaches the non-annealing area passing through the third exposure field; Performing a second light emission when the laser leaves the non-annealing area; Turning off the light for the second time when the laser reaches the end position of the third exposure field; The first light-on time is Time_start(j), the first light-off time is Time_start(j)+[NotchArea(i)_min_max-Fielded_start] / Vscan, the second light-on time is Time_start(j)+[NotchArea(i)_max_min_Fielded_start] / Vscan, and the second light-off time is Time_end(j). The NotchArea(i)_min_max is the minimum boundary value or the maximum boundary value of the non-annealing area in the scanning direction, the NotchArea(i)_max_min is the maximum boundary value or the minimum boundary value of the non-annealing area in the scanning direction, the Vscan is the scanning speed of the annealing scan, the value of j is j1 or j2, and the Field_start is the scanning start position of the exposure field j1 or the exposure field j2.

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