Peeling method and peeling system

By absorbing infrared light in the adhesive layer to form a peeling area and combining it with mechanical force, the peeling problem of the thinned wafer and the supporting wafer is solved, achieving an efficient and low-damage peeling effect, and improving productivity and equipment utilization.

CN120600657APending Publication Date: 2025-09-05TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202510204046.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-11-21
Filing Date
2025-02-24
Publication Date
2025-09-05

AI Technical Summary

Technical Problem

In the prior art, when peeling the thinned semiconductor wafer and the support wafer, the wafer is easily cracked, the processing time is long, the productivity is low, and the formation process of the light-to-heat conversion layer during laser peeling affects the productivity.

Method used

By absorbing infrared light in the adhesive layer to cause it to deteriorate, the first peeling area and the second peeling area are formed, and combined with mechanical force peeling to reduce the load on the wafer, a method combining laser irradiation and blade insertion is used to optimize the peeling process.

Benefits of technology

This enables efficient and low-damage wafer stripping, reduces processing time and cleaning time, improves productivity, and reduces equipment contamination risk and maintenance frequency.

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Abstract

The invention provides a peeling method and a peeling system. The peeling method and the peeling system are used for efficiently peeling a second substrate from a superposed body formed by bonding a first substrate and the second substrate through an adhesive layer. In a peeling method in which a first substrate and a second substrate, which transmit light, are peeled from a composite body in which the first substrate and the second substrate are bonded with an adhesive layer therebetween, the adhesive layer is deteriorated by absorbing the light, the peeling method includes a process of irradiating the adhesive layer with the light through the second substrate, and peeling the second substrate from the composite body in which the first substrate and the second substrate are bonded with each other through the adhesive layer. A first peeling region and a second peeling region are formed at the interface between the adhesive layer and the second substrate, the first peeling region being generated by deterioration of the adhesive layer that has absorbed the light, and the second peeling region being generated by deterioration of the adhesive layer that has absorbed the light. The second peeling region is a peeling region extending from the first peeling region at least in the radial direction of the adhesive layer; and stripping the second substrate from the overlapping body.
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Citation Information

Patent Citations

  • Member peeling method, member processing method and semiconductor chip manufacture method

    JP2015122370A