Wafer taking and placing deviation motion method and system under high-temperature expansion of wafer box

Abstract

The invention provides a wafer taking and placing offset motion method and system under high-temperature expansion of a wafer box, and the method comprises the steps: obtaining a real-time temperature value in a reaction chamber, a first material type of a wafer box support, and a second material type of each wafer separation groove in the wafer box; then calculating the temperature difference between the real-time temperature value and the initial temperature value, and calculating the size when the wafer box bracket expands and the size when the wafer separation grooves expand under the temperature difference based on the temperature difference in combination with the material types of the wafer box bracket and the separation grooves in the wafer box; and then the existing wafer box transmission system is calibrated based on the expansion size, so that the wafer box transmission system accurately takes and places the wafer in the wafer separation groove based on the expansion size, the problems of collision and rubbing caused by taking and placing the wafer based on the size before expansion in the existing scheme are avoided, and the quality of wafer production is effectively guaranteed.

Description

Technical Field

[0001] The present application relates to the field of general control or regulation control technology, and in particular to a method and system for offset movement of wafers for taking and placing wafers under high-temperature expansion of a wafer box. Background Art

[0002] Atomic layer deposition (ALD) equipment is an advanced technology used to deposit ultra-thin films on material surfaces. It uses gaseous precursor substances to alternately enter the reaction chamber, causing self-limiting chemical reactions on the substrate surface of the wafer, thereby achieving atomic layer film growth on the wafer surface.

[0003] The wafers of ALD equipment are usually neatly placed in wafer cassettes, which are mostly located at the wafer loading system of the ALD equipment. For example, the wafer loading system of some equipment is similar to a support structure that can accommodate multiple wafer cassettes, which is convenient for storing and managing a large number of wafers to be processed. The wafer cassette of existing ALD equipment can store up to 25 wafers. Before the process operation, the wafers are transferred to the corresponding layer of the wafer cassette by a vacuum robot. During each transfer process, the position of the vacuum robot remains unchanged. The motor under the wafer cassette drives the wafer cassette to move up and down to ensure that the vacuum robot picks up and places wafers with precisely corresponding layers.

[0004] However, since the ALD process is carried out in a high-temperature environment, the wafer box will undergo thermal expansion. At this time, if the wafer box is still placed and taken out according to the position set at normal temperature, it is easy for the wafers to collide and scratch each other, affecting the wafer process production quality. Summary of the Invention

[0005] In view of this, the embodiments of the present application provide a method and system for wafer offset movement when taking and placing wafers under high-temperature expansion of the wafer box, so as to reduce collisions and scratches caused by the high-temperature expansion of the wafer box when taking and placing wafers, thereby reducing the negative impact of the degradation of wafer quality caused by high-temperature expansion.

[0006] In a first aspect, an embodiment of the present application provides a method for offset movement of wafers for loading and unloading under high-temperature expansion of a wafer cassette, wherein the method comprises:

[0007] Acquire a real-time temperature value in the reaction chamber, a first material type of the wafer box support, and a second material type of each wafer separation slot in the wafer box;

[0008] Calculating the temperature difference between the real-time temperature value and the initial temperature value;

[0009] Based on the temperature difference and the first material type and the second material type, respectively calculating a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value;

[0010] The first expansion size and the second expansion size are used as calibration factors to calibrate the wafer box transmission system of the reaction chamber, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors.

[0011] In combination with the first aspect, in a second possible embodiment, the calculating, based on the temperature difference and the first material type and the second material type, a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value, respectively, includes:

[0012] Based on the first material type and the second material type, respectively determining a first expansion coefficient of the material of the wafer box holder and a second expansion coefficient of the material of each of the wafer separation slots;

[0013] Obtaining a first original length of the wafer box support at the initial temperature value and a second original length of each of the wafer separation grooves at the initial temperature value;

[0014] Based on the first original length and the second original length, the first expansion size and the second expansion size are calculated respectively according to a preset material expansion formula, wherein the preset material expansion formula is a mathematical formula set in advance according to the expansion of the material at different temperatures.

[0015] In combination with the second possible embodiment of the first aspect, in a third possible embodiment, the preset material expansion formula satisfies:

[0016]

[0017] Wherein, L is the first original length, α is the first expansion coefficient, ΔT is the temperature difference, ΔL is the first expansion dimension, l is the second original length, β is the second expansion coefficient, and Δl is the second expansion dimension of each of the wafer separation grooves.

[0018] In combination with the third possible embodiment of the first aspect, in a fourth possible embodiment, a change value of the wafer holder at the layer where the wafer separation groove is located after expansion satisfies:

[0019]

[0020] Wherein, Lx is the first original length of the wafer holder at the position of the wafer separation groove of the x-th layer, and ΔLx is the first expansion size of the wafer holder at the position of the wafer separation groove of the x-th layer;

[0021] The method of calibrating a wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors, includes:

[0022] The vertical offset θ of the vertical motor in the wafer box transmission system is determined according to the following formula: x :

[0023]

[0024] Among them, θ x is the vertical offset corresponding to the wafer separation groove of the x-th layer.

[0025] In combination with the first aspect, in a fifth possible embodiment, each of the wafer separation slots is a slot-shaped structure space in a multi-wafer box, each of the wafer separation slots is used to hold each wafer respectively, and the size of each of the wafer separation slots is the vertical size of each of the wafer separation slots; the length of the wafer box bracket is the vertical height between the upper top and the bottom of the wafer box bracket, and the initial temperature value is a preset normal temperature value.

[0026] In combination with the first aspect, in a sixth possible embodiment,

[0027] The method further comprises:

[0028] According to the offset θ corresponding to each of the wafer separation grooves x , calibrating the movement displacement of the vertical motor;

[0029] The target moving position of the vertical motor = the displacement of the vertical motor at room temperature + the offset θ x .

[0030] In a second aspect, an embodiment of the present application provides a method system for offset movement of wafers for picking up and placing wafers under high-temperature expansion of a wafer cassette, the system comprising:

[0031] An input module is used to obtain a real-time temperature value in the reaction chamber, a first material type of the wafer box support, and a second material type of each wafer separation slot in the wafer box;

[0032] a calculation module, configured to calculate a temperature difference between the real-time temperature value and the initial temperature value; and based on the temperature difference and the first material type and the second material type, respectively calculate a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value;

[0033] The control module is configured to calibrate the wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors.

[0034] In conjunction with the second aspect, in a second possible embodiment, the calculation module is specifically configured to:

[0035] Based on the first material type and the second material type, respectively determining a first expansion coefficient of the material of the wafer box holder and a second expansion coefficient of the material of each of the wafer separation slots;

[0036] Obtaining a first original length of the wafer box support at the initial temperature value and a second original length of each of the wafer separation grooves at the initial temperature value;

[0037] Based on the first original length and the second original length, the first expansion size and the second expansion size are calculated respectively according to a preset material expansion formula, wherein the preset material expansion formula is a mathematical formula set in advance according to the expansion of the material at different temperatures.

[0038] In conjunction with the second possible embodiment of the second aspect, in a third possible embodiment, the preset material expansion formula satisfies:

[0039]

[0040] Wherein, L is the first original length, α is the first expansion coefficient, ΔT is the temperature difference, ΔL is the first expansion dimension, l is the second original length, β is the second expansion coefficient, and Δl is the second expansion dimension of each of the wafer separation grooves.

[0041] In combination with the third possible embodiment of the second aspect, in a fourth possible embodiment, a change value of the wafer holder at the layer where the wafer separation groove is located after expansion satisfies:

[0042]

[0043] Wherein, Lx is the first original length of the wafer holder at the position of the wafer separation groove of the x-th layer, and ΔLx is the first expansion size of the wafer holder at the position of the wafer separation groove of the x-th layer;

[0044] The method of calibrating a wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors, includes:

[0045] The vertical offset θ of the vertical motor in the wafer box transmission system is determined according to the following formula: x :

[0046]

[0047] Among them, θ x is the vertical offset corresponding to the wafer separation groove of the x-th layer.

[0048] In combination with the second aspect, in a fifth possible embodiment, each of the wafer separation grooves is a groove-shaped structural space in a multi-wafer box, each of the wafer separation grooves is used to hold each wafer respectively, and the size of each of the wafer separation grooves is the vertical size of each of the wafer separation grooves; the length of the wafer box bracket is the vertical height between the upper top and the bottom of the wafer box bracket, and the initial temperature value is a preset normal temperature value.

[0049] In combination with the second aspect, in a sixth possible embodiment, the control module is specifically configured to:

[0050] Based on the second expanded size, the original size of each wafer separation slot in the wafer box transmission system is corrected to obtain a second actual size of each wafer separation slot;

[0051] According to the offset θ corresponding to each of the wafer separation grooves x , calibrating the movement displacement of the vertical motor;

[0052] The target moving position of the vertical motor = the displacement of the vertical motor at room temperature + the offset θ x .

[0053] In a third aspect, an embodiment of the present application provides an electronic device, wherein the electronic device includes: a processor; and a memory for storing a program; wherein the program includes instructions, and when the instructions are executed by the processor, the processor executes the method for wafer placement and wafer offset movement under high-temperature expansion of the wafer box described in the first aspect.

[0054] In a fourth aspect, an embodiment of the present application provides a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to enable a computer to execute the method for wafer placement and wafer offset movement under high-temperature expansion of a wafer box as described in the first aspect.

[0055] Beneficial effects of this application:

[0056] The present application provides a method and system for wafer offset movement during high-temperature expansion of a wafer cassette. The method obtains the real-time temperature value within a reaction chamber, the first material type of the wafer cassette holder, and the second material type of each wafer separation slot within the wafer cassette. The method then calculates the temperature difference between the real-time temperature value and the initial temperature value. Based on this temperature difference and the material types of the wafer cassette holder and each separation slot within the wafer cassette, the dimensions of the wafer cassette holder and the wafer separation slot when expanded under this temperature difference are calculated. The existing wafer cassette transmission system is then calibrated based on this expanded dimension, allowing the wafer cassette transmission system to accurately retrieve and place wafers in the wafer separation slot based on this expanded dimension. This avoids the bumps and scratches that occur when wafers are retrieved and placed based on the pre-expansion dimensions in existing solutions, effectively ensuring the quality of wafer production. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0058] Figure 1 A schematic diagram of the structure of the transfer chamber and reaction chamber of a multi-wafer ALD device provided in an embodiment of the present application is shown;

[0059] Figure 2 A schematic structural diagram of a wafer box provided in an embodiment of the present application is shown;

[0060] Figure 3 A schematic diagram of a flow chart of a method for offsetting wafer placement and loading under high-temperature expansion of a wafer cassette provided in an embodiment of the present application is shown;

[0061] Figure 4 A schematic diagram of the size structure of a wafer box provided in an embodiment of the present application is shown;

[0062] Figure 5 A schematic diagram of a system architecture of a wafer pick-up and placement offset motion system under high-temperature expansion of a wafer cassette provided in an embodiment of the present application is shown;

[0063] Figure 6 A structural block diagram of an exemplary electronic device that can be used to implement the embodiments of the present application is shown. DETAILED DESCRIPTION

[0064] The following describes embodiments of the present application in more detail with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are for illustrative purposes only and are not intended to limit the scope of protection of the present application.

[0065] It should be understood that the various steps described in the method embodiments of the present application can be performed in different orders and / or in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this respect.

[0066] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the description below. It should be noted that the concepts of "first", "second", etc. mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0067] It should be noted that the modifications of "one" and "multiple" mentioned in this application are illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly indicated in the context, they should be understood as "one or more".

[0068] As described in the background, atomic layer deposition (ALD) is an advanced thin-film deposition technology that deposits single-atom films layer by layer onto a substrate. Existing ALD equipment primarily consists of a transfer chamber, vacuum manipulator, gate valve, inner and outer reaction chambers, source cabinet, gas cabinet, vacuum system, and heating system. Stable temperature control in the reaction chamber plays a crucial role in determining the outcome of thin-film deposition. Advanced processes typically require a reaction chamber temperature above 300°C.

[0069] ALD equipment can be divided into single-wafer ALD equipment and batch ALD equipment. The existing ALD equipment is a batch ALD equipment. The structure of the transfer chamber and reaction chamber of the batch ALD equipment can be as follows: Figure 1 As shown, it includes the following parts:

[0070] ① The outer reaction cavity plays the role of protecting the inner cavity, maintaining pressure and heat insulation.

[0071] ②The reaction chamber is a physically isolated space whose main function is to ensure a stable reaction environment for the wafer.

[0072] ③ Wafer box, used to load wafers during process production, with a total of 25 layers, and 25 wafers when fully loaded.

[0073] ④ Wafer, mainly the reactants react on the surface of the wafer to grow into the required thin film layer.

[0074] ⑤Wafer box transmission system, used to drive the wafer box up and down.

[0075] ⑥ Wafer box tray, used to carry wafer boxes.

[0076] ⑦ The gate valve between the transfer chamber and the reaction chamber is used to isolate the transfer chamber and the reaction chamber.

[0077] ⑧Transmission cavity.

[0078] ⑨ Vacuum robot, used to pick up and place wafers.

[0079] ⑩ The heating wire of the reaction chamber is used to provide a controllable heat source for heating the entire reaction chamber and maintain the chamber temperature within the set range.

[0080] Among them, the structure of the wafer box can be as follows Figure 2 As shown, it includes the following two parts:

[0081] Wafer separation grooves are used to hold wafers.

[0082] Wafer box holder, the arrows represent the direction of wafer placement.

[0083] like Figure 1 、 Figure 2 As shown, the specific execution process of the existing wafer pick-and-place control system when placing the wafer is as follows:

[0084] After the heating wire reaches the set temperature, the wafer is ready to be placed. At this point, the wafer cassette drive system moves to the predetermined position, the gate valve opens, and the vacuum robot extends and places the wafer in the wafer separation slot corresponding to the number of layers in the wafer cassette. The vacuum robot then retracts and closes the gate valve. Next, to place the next wafer, the wafer cassette drive system moves to the new set position and repeats the above steps: the gate valve opens, the vacuum robot extends and places the wafer in the corresponding position, the vacuum robot retracts, and the gate valve closes. This process repeats until all wafers have been placed. Finally, the wafer cassette drive system moves upward until it aligns with the inner reaction chamber, completing the cavity and completely isolating it from the outer reaction chamber.

[0085] The existing wafer pick-and-place control system has the following process when taking wafers:

[0086] The cassette's transport system first moves to a preset position, opens the gate valve, and the vacuum robot extends to remove a wafer from the corresponding wafer slot in the cassette. The vacuum robot then retracts, closing the gate valve. To remove the next wafer, the cassette's transport system moves to a new preset position, and the process repeats: the gate valve opens, the vacuum robot extends to remove the wafer, the vacuum robot retracts, and the gate valve closes. This process repeats until all wafers have been removed.

[0087] In existing wafer pick-and-place control systems, the positions of the vacuum manipulator and wafer cassette transmission system for picking and placing wafers are taught at room temperature. This does not take into account the changes in hardware status at high temperatures, resulting in the following shortcomings:

[0088] Wafer boxes and wafer box trays will experience thermal expansion under high temperature conditions, and the vertical dimensions of the wafer box bracket will change. Correspondingly, the position of the wafer separation slots on the wafer box will also change with the expansion. The vacuum robot will perform the pick-and-place process based on the wafer pick-and-place positions that have been taught at normal temperature, which will cause scratches between the vacuum robot and the wafers, and between the wafers and the wafer separation slots, thereby damaging the wafers and the wafer box. This will easily cause cost losses in wafer production and make it impossible to guarantee the quality of the produced wafers.

[0089] In view of this, the present application provides a method and system for wafer offset movement for picking up and placing wafers under high-temperature expansion of a wafer box, wherein the method is applied to the wafer offset movement system for picking up and placing wafers under high-temperature expansion of a wafer box provided in the present application, or applied to any electronic device capable of picking up and placing wafers under high-temperature expansion of a wafer box, the types of which include but are not limited to: industrial computers, industrial control computers, servers, etc.

[0090] In the first aspect, the present application provides a method for wafer offset movement when a wafer box is expanded at high temperature, such as Figure 3 As shown, the method includes the following steps:

[0091] S31, obtaining a real-time temperature value in the reaction chamber, a first material type of the wafer box holder, and a second material type of each wafer separation slot in the wafer box;

[0092] S32, calculating the temperature difference between the real-time temperature value and the initial temperature value;

[0093] S33, calculating a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value based on the temperature difference and the first material type and the second material type;

[0094] S34. Using the first expansion size and the second expansion size as calibration factors, calibrate the wafer box transmission system of the reaction chamber, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors.

[0095] In an embodiment of the present application, the real-time temperature value in the reaction chamber, the first material type of the wafer cassette holder, and the second material type of each wafer separation slot in the wafer cassette are obtained. The temperature difference between the real-time temperature value and the initial temperature value is then calculated. Based on this temperature difference and the material types of the wafer cassette holder and each separation slot in the wafer cassette, the dimensions of the wafer cassette holder and the wafer separation slot when expanded under this temperature difference are calculated. Then, based on this expanded dimension, the existing wafer cassette transmission system is calibrated so that the wafer cassette transmission system can accurately pick up and place wafers in the wafer separation slots based on this expanded dimension, thereby avoiding the bumps and scratches caused by the existing solution of picking up and placing wafers based on the dimensions before expansion, helping to reduce the problem of wafer quality degradation caused by high-temperature expansion, and effectively ensuring the quality of wafer production.

[0096] The following will describe the above steps S31 to S34 in detail with reference to specific figures and examples:

[0097] In the embodiment of the present application, when executing step S31, the real-time temperature value in the reaction chamber is obtained by obtaining the temperature value sent back by the temperature control sensor in the temperature control system of the reaction chamber to obtain the real-time temperature value in the reaction chamber. Specifically, the real-time temperature value in the reaction chamber can be determined by obtaining the temperature value collected by the thermocouple in the reaction chamber. Further, step S32 is executed to calculate the temperature difference between the real-time temperature value and the initial temperature value. The initial temperature difference can be a preset room temperature value, for example, 25°C. As another possible embodiment, the initial temperature difference can be the temperature value of the reaction chamber corresponding to the last time the wafer box transmission system was calibrated, or the temperature value under any known actual size of the wafer box holder and the actual size of the wafer separation slot.

[0098] The first material type of the wafer box holder and the second material type of each wafer separation slot in the wafer box can be obtained by reading a preset material information configuration file, wherein the preset material information configuration file records the pre-configured material type and material name of the wafer box holder and each separation slot in the wafer box. Among them, if the entire wafer box is made of the same material as a whole, then the material type of the wafer box holder and each wafer separation slot in the wafer box is the same material. For example, the material of the wafer box holder and each wafer separation slot in the wafer box is 1Cr18Ni9Ti stainless steel. This example is only an example and does not mean that this type of material must be used to produce the wafer box holder and the wafer separation slot in the actual process production.

[0099] If the entire wafer cassette is machined from different materials and assembled through a mechanical structure, the wafer cassette support and the wafer separation slots within the wafer cassette may be made of different materials. For ease of distinction, this application designates the material type of the wafer cassette support as the first material type and the material type of the wafer separation slots as the second material type. For example, if the wafer cassette support is made of 1Cr18Ni9Ti stainless steel and the wafer separation slots are made of 18-8 stainless steel, the first material type is 1Cr18Ni9Ti stainless steel and the second material type is 18-8 stainless steel.

[0100] In the embodiment of the present application, the first material type of the wafer cassette holder and the second material type of the wafer separation slot are determined by the material types selected during their production and processing. Therefore, when executing step S31, the specific material types of the wafer cassette holder and the wafer separation slot can be obtained by accessing the processing material type used in the production and processing order associated with the wafer cassette holder and the wafer separation slot via a data interface with the enterprise's production and processing management system. The purpose of obtaining the material type is to facilitate determining whether the wafer cassette holder and the wafer separation slot will expand in a high-temperature environment, and the specific degree of expansion.

[0101] As a preferred embodiment, the first thermal expansion coefficient of the material of the wafer cassette holder and the second thermal expansion coefficient of the material of each wafer separation slot can be determined based on the first material type and the second material type, respectively. In this application, it is assumed that the material of each wafer separation slot is the same, so the second thermal expansion coefficient of all wafer separation slots should be the same. If the material of the wafer cassette holder and the material of the wafer separation slots are the same, then the thermal expansion coefficient of the wafer cassette holder material and the material coefficient of the wafer separation slots should be the same.

[0102] In the embodiment of the present application, the expansion coefficient refers to: a physical quantity of the thermal expansion property of an object, that is, a physical quantity that characterizes the degree of increase in the length, area, and volume of an object when heated. It can be divided into linear expansion coefficient, surface expansion coefficient, and volume expansion coefficient. In the embodiment of the present application, the wafer scratch depends on the specific operating size of the vacuum manipulator, and is combined with the following: Figure 1 It can be understood from the mechanical structure diagram shown that the length of the object after thermal expansion directly affects the specific operating dimensions of the vacuum manipulator. Therefore, in the embodiment of the present application, the expansion coefficient specifically refers to the linear expansion coefficient.

[0103] In some possible embodiments, if the materials of the wafer box holder and the wafer separation groove are known, the step of obtaining the material types of the wafer box holder and the wafer separation groove can be directly omitted, and the first expansion coefficient of the wafer box holder and the second expansion coefficient of the wafer separation groove can be directly obtained. As a preferred implementation method, the first expansion coefficient of the wafer box holder and the second expansion coefficient of the wafer separation groove can be obtained by reading a preset expansion coefficient configuration file or from a host computer.

[0104] Because material expansion at high temperatures is a linear change relative to its original dimensions, given a known temperature difference and expansion coefficient, the dimensional change per unit size caused by that temperature difference can be determined. This can be understood as the dimensional change per unit size being equal to the product of the expansion coefficient and the temperature difference. Based on this, in some possible embodiments, it is necessary to obtain the first original length of the wafer cassette holder at the initial temperature and the second original length of each wafer separation slot at the initial temperature.

[0105] Then, based on the first original length and the second original length, the first expanded size and the second expanded size are calculated respectively according to a preset material expansion formula.

[0106] The preset material expansion formula is a mathematical formula pre-set based on the material's expansion at different temperatures. As an embodiment, the preset material expansion formula is a mathematical formula pre-fitted based on the material's expansion at different temperatures from multiple historical tests. The preset material expansion formula can be a linear or non-linear mathematical formula, a simple length expansion formula, or a complex surface expansion or volume expansion formula.

[0107] As a preferred embodiment, in the present application, the preset material expansion formula may be a linear length expansion mathematical formula. Wherein, the preset material expansion formula satisfies:

[0108]

[0109] Wherein, L is the first original length, α is the first expansion coefficient, ΔT is the temperature difference, ΔL is the first expansion dimension, l is the second original length, β is the second expansion coefficient, and Δl is the second expansion dimension of each wafer separation groove.

[0110] That is, when executing step S33, the unit first expansion dimension is the product of the first expansion coefficient of the wafer box holder and the temperature difference, and the unit second expansion dimension is the product of the second expansion coefficient and the temperature difference. Then, combined with the original size of the wafer box holder, the specific size change of the wafer box holder under this temperature difference can be determined, that is, the size change of the wafer box holder is the product of the original length of the wafer box holder and the unit first expansion dimension.

[0111] In this application, the size relationship between the wafer box support and the wafer separation slot can be based on Figure 4 In the embodiment of the present application, the wafer box is a multi-wafer box that can accommodate up to 25 wafers, such as Figure 4 or Figure 2 As shown, each wafer separation slot is a slot-shaped structure space in a multi-wafer box, and each wafer separation slot is used to hold each wafer, that is, one wafer separation slot can hold one wafer. Figure 4 As shown, the size of each wafer separation groove in the present application is the vertical distance between the lower boundary of each wafer separation groove and the bottom of the wafer box holder (or the bottom of the entire wafer box); the length of the wafer box holder is the vertical height between the upper top and bottom of the wafer box holder.

[0112] Among them, regardless of whether the wafer holder and the wafer separation groove are made of the same material, the dimensions of the wafer holder and the wafer separation groove will affect the offset dimension of the wafer holder. At this time, the change value of the wafer holder at the layer where the wafer separation groove is located after expansion satisfies:

[0113]

[0114] Wherein, Lx is the first original length of the wafer holder at the position of the wafer separation groove of the x-th layer, and ΔLx is the first expansion size of the wafer holder at the position of the wafer separation groove of the x-th layer;

[0115] The method of calibrating a wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors, includes:

[0116] The vertical offset θ of the vertical motor in the wafer box transmission system is determined according to the following formula: x :

[0117]

[0118] Among them, θ x is the vertical offset corresponding to the wafer separation groove of the x-th layer.

[0119] Based on this, when executing step S34, the first and second expansion dimensions calculated above can be used as calibration factors to calibrate the operating space dimensions of the vacuum manipulator in the wafer transmission system. This is essentially calibrating the displacement of the vertical motor in the conventional wafer transmission system. It can be understood that the vertical motor moves in the vertical direction to ensure that the vacuum manipulator is in the correct position for wafer placement when it reaches the wafer separation slot. During this process, if the displacement of the vertical motor cannot ensure that the vacuum manipulator is in the incorrect position for wafer placement in the wafer separation slot, it will cause the wafer placed by the vacuum manipulator to scratch the wafer separation slot, or the wafer to scratch the wafer separation slot when removing the wafer. Based on this, the vertical motor's vertical offset is calculated using the above formula. The offset of each layer of wafer separation slot is different. Based on this offset, the vertical motor's displacement is compensated to ensure that the vertical motor can move to the position where the vacuum manipulator can try to pick up and place the wafer, avoiding wafer scratches.

[0120] In the above formula

[0121]

[0122] The expanded size of the wafer support at each wafer separation slot can be calculated, and then the vertical size change of each layer of wafer separation slots after high-temperature expansion can be calculated based on the formula Δl=l*α*ΔT. Furthermore, since the wafer separation slots have no contact with other objects in the upper and lower directions, they expand evenly in the upper and lower directions during high-temperature expansion, so the size change values ​​are the same.

[0123] As an implementation method, when executing the above step S13, it can be achieved through the following steps:

[0124] According to the offset θ corresponding to each of the wafer separation grooves x , calibrating the movement displacement of the vertical motor;

[0125] The target moving position of the vertical motor = the displacement of the vertical motor at room temperature + the offset θ x .

[0126] Based on this, the vertical motor's vertical offset is calculated using the formula above. The offset varies for each layer of wafer separation slots, and this offset is used to compensate for the vertical motor's displacement at room temperature. This ensures the vertical motor can move to a position where the vacuum robot can access and place wafers, preventing scratches on the wafers. This offset is then added to the vacuum robot's normal temperature access position to accurately determine the wafer placement position. This prevents friction and collision between the wafers and the wafer separation slots when the vacuum robot accesses and places them, reducing wafer damage.

[0127] By selecting an embodiment of the present application, the specific position changes of the wafer box bracket and the wafer separation slot under high-temperature expansion are calculated, and then the actual position of the wafer separation slot after high-temperature expansion is calculated, and the motion position value of the wafer box transmission system is adjusted in real time to ensure that the position of each wafer is taken and placed is accurate, to ensure that the wafer separation slot will not scratch the wafer, and to reduce the problem of being unable to take and place the wafer normally due to the expansion of the wafer separation slot.

[0128] In a second aspect, the present application provides a wafer pick-up and placement offset motion system under high temperature expansion of a wafer box, wherein, Figure 5 As shown, the system 50 includes:

[0129] An input module 501 is configured to obtain a real-time temperature value in the reaction chamber, a first material type of the wafer cassette support, and a second material type of each wafer separation slot in the wafer cassette;

[0130] a calculation module 502 for calculating a temperature difference between the real-time temperature value and the initial temperature value; and calculating, based on the temperature difference and the first material type and the second material type, a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value;

[0131] The control module 503 is configured to calibrate the wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors.

[0132] In conjunction with the second aspect, in a second possible embodiment, the calculation module is specifically configured to:

[0133] Based on the first material type and the second material type, respectively determining a first expansion coefficient of the material of the wafer box holder and a second expansion coefficient of the material of each of the wafer separation slots;

[0134] Obtaining a first original length of the wafer box support at the initial temperature value and a second original length of each of the wafer separation grooves at the initial temperature value;

[0135] Based on the first original length and the second original length, the first expansion size and the second expansion size are calculated respectively according to a preset material expansion formula, wherein the preset material expansion formula is a mathematical formula set in advance according to the expansion of the material at different temperatures.

[0136] In conjunction with the second possible embodiment of the second aspect, in a third possible embodiment, the preset material expansion formula satisfies:

[0137]

[0138] Wherein, L is the first original length, α is the first expansion coefficient, ΔT is the temperature difference, ΔL is the first expansion dimension, l is the second original length, β is the second expansion coefficient, and Δl is the second expansion dimension of each of the wafer separation grooves.

[0139] In combination with the third possible embodiment of the second aspect, in a fourth possible embodiment, a change value of the wafer holder at the layer where the wafer separation groove is located after expansion satisfies:

[0140]

[0141] Wherein, Lx is the first original length of the wafer holder at the position of the wafer separation groove of the x-th layer, and ΔLx is the first expansion size of the wafer holder at the position of the wafer separation groove of the x-th layer;

[0142] The method of calibrating a wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors, includes:

[0143] The vertical offset θ of the vertical motor in the wafer box transmission system is determined according to the following formula: x :

[0144]

[0145] Among them, θ x is the vertical offset corresponding to the wafer separation groove of the x-th layer.

[0146] In combination with the second aspect, in a fifth possible embodiment, each of the wafer separation grooves is a groove-shaped structural space in a multi-wafer box, each of the wafer separation grooves is used to hold each wafer respectively, and the size of each of the wafer separation grooves is the vertical size of each of the wafer separation grooves; the length of the wafer box bracket is the vertical height between the upper top and the bottom of the wafer box bracket, and the initial temperature value is a preset normal temperature value.

[0147] In combination with the second aspect, in a sixth possible embodiment, the control module is specifically configured to:

[0148] According to the offset θ corresponding to each of the wafer separation grooves x , calibrating the movement displacement of the vertical motor;

[0149] The target moving position of the vertical motor = the displacement of the vertical motor at room temperature + the offset θ x .

[0150] The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0151] In a third aspect, exemplary embodiments of the present application further provide an electronic device, comprising: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program executable by the at least one processor, wherein the computer program, when executed by the at least one processor, causes the electronic device to perform a method according to an embodiment of the present application.

[0152] An exemplary embodiment of the present application further provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor of a computer, is used to cause the computer to perform a method according to an embodiment of the present application.

[0153] An exemplary embodiment of the present application further provides a computer program product, including a computer program, wherein when the computer program is executed by a processor of a computer, it is used to cause the computer to perform the method according to the embodiment of the present application.

[0154] refer to Figure 6, a block diagram of an electronic device 600 that can serve as a server or client of the present application will now be described, which is an example of a hardware device that can be applied to various aspects of the present application. The electronic device is intended to represent various forms of digital electronic computer equipment, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present application described and / or required herein.

[0155] like Figure 6 As shown, the electronic device 600 includes a computing unit 601, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM 602) or a computer program loaded from a storage unit 608 into a random access memory (RAM 603). In the RAM 603, various programs and data required for the operation of the electronic device 600 can also be stored. The computing unit 601, the ROM 602, and the RAM 603 are connected to each other via a bus 604. An input / output interface (I / O interface 605) is also connected to the bus 604.

[0156] Multiple components within electronic device 600 are connected to I / O interface 605, including an input unit 606, an output unit 607, a storage unit 608, and a communication unit 609. Input unit 606 can be any type of device capable of inputting information into electronic device 600. Input unit 606 can receive input numeric or character information and generate key input signals related to user settings and / or function control of the electronic device. Output unit 607 can be any type of device capable of presenting information and may include, but is not limited to, a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. Storage unit 608 may include, but is not limited to, a magnetic disk or an optical disk. Communication unit 609 allows electronic device 600 to exchange information / data with other devices via computer networks such as the Internet and / or various telecommunication networks and may include, but is not limited to, a modem, a network card, an infrared communication device, a wireless communication transceiver and / or a chipset, such as a Bluetooth™ device, a WiFi device, a WiMax device, a cellular communication device, and / or the like.

[0157] The computing unit 601 can be a variety of general and / or specialized processing components with processing and computing capabilities. Some examples of the computing unit 601 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units that run machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The computing unit 601 performs the various methods and processes described above. For example, in some embodiments, the aforementioned method for shifting the movement of wafers for picking and placing wafers under high-temperature expansion of the wafer cassette can be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as a storage unit 608. In some embodiments, part or all of the computer program can be loaded and / or installed on the electronic device 600 via the ROM 602 and / or the communication unit 609. In some embodiments, the computing unit 601 can be configured to perform the aforementioned method for shifting the movement of wafers for picking and placing wafers under high-temperature expansion of the wafer cassette by any other appropriate means (e.g., by means of firmware).

[0158] The program code for implementing the methods of the present application can be written in any combination of one or more programming languages. Such program code can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the program code is executed by the processor or controller, the functions / operations specified in the flow charts and / or block diagrams are implemented. The program code can be executed entirely on the machine, partially on the machine, as a stand-alone software package, partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0159] In the context of the present application, a machine-readable medium can be a tangible medium that can contain or store a program for use by an instruction execution system, device or equipment or used in combination with an instruction execution system, device or equipment. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared or semiconductor system, device or equipment, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium can include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0160] As used herein, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, apparatus, and / or device (e.g., a magnetic disk, an optical disk, a memory, a programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0161] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0162] The systems and techniques described herein can be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include a local area network (LAN), a wide area network (WAN), and the Internet.

[0163] Computer systems may include clients and servers. A client and server are generally remote from each other and typically interact through a communication network. The client and server relationship arises through computer programs running on the respective computers and having a client-server relationship to each other.

Claims

1. A method for offsetting wafer placement during wafer cassette high temperature expansion, characterized in that: The method comprises: Acquire a real-time temperature value in the reaction chamber, a first material type of the wafer box support, and a second material type of each wafer separation slot in the wafer box; Calculating the temperature difference between the real-time temperature value and the initial temperature value; Based on the temperature difference and the first material type and the second material type, respectively calculating a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value; The first expansion size and the second expansion size are used as calibration factors to calibrate the wafer box transmission system of the reaction chamber, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors.

2. The method according to claim 1, characterized in that The calculating, based on the temperature difference and the first material type and the second material type, respectively, a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value includes: Based on the first material type and the second material type, respectively determining a first expansion coefficient of the material of the wafer box holder and a second expansion coefficient of the material of each of the wafer separation slots; Obtaining a first original length of the wafer box support at the initial temperature value and a second original length of each of the wafer separation grooves at the initial temperature value; Based on the first original length and the second original length, the first expansion size and the second expansion size are calculated respectively according to a preset material expansion formula, wherein the preset material expansion formula is a mathematical formula set in advance according to the expansion of the material at different temperatures.

3. The method according to claim 2, characterized in that The preset material expansion formula satisfies: Wherein, L is the first original length, α is the first expansion coefficient, ΔT is the temperature difference, ΔL is the first expansion dimension, l is the second original length, β is the second expansion coefficient, and Δl is the second expansion dimension of each of the wafer separation grooves.

4. The method according to claim 3, characterized in that The change value of the wafer support at the layer where the wafer separation groove is located after expansion satisfies: Wherein, Lx is the first original length of the wafer holder at the position of the wafer separation groove of the x-th layer, and ΔLx is the first expansion size of the wafer holder at the position of the wafer separation groove of the x-th layer; The method of calibrating a wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors, includes: The vertical offset θ of the vertical motor in the wafer box transmission system is determined according to the following formula: x : Among them, θ x is the vertical offset corresponding to the wafer separation groove of the x-th layer.

5. The method according to claim 1, wherein Each of the wafer separation slots is a slot-shaped structure space in a multi-wafer box, and each of the wafer separation slots is used to hold each wafer respectively. The size of each of the wafer separation slots is the vertical size of each of the wafer separation slots; the length of the wafer box bracket is the vertical height between the upper top and the bottom of the wafer box bracket, and the initial temperature value is a preset normal temperature value.

6. The method according to claim 4, characterized in that The method further comprises: According to the offset corresponding to each of the wafer separation grooves calibrating the movement displacement of the vertical motor; The target moving position of the vertical motor = the displacement of the vertical motor at room temperature + the offset 7. A wafer loading and unloading displacement motion system under high temperature expansion of a wafer box, characterized in that: The system comprises: An input module is used to obtain a real-time temperature value in the reaction chamber, a first material type of the wafer box support, and a second material type of each wafer separation slot in the wafer box; a calculation module, configured to calculate a temperature difference between the real-time temperature value and the initial temperature value; and based on the temperature difference and the first material type and the second material type, respectively calculate a first expansion dimension of the wafer box holder at the real-time temperature value and a second expansion dimension of each of the wafer separation slots at the real-time temperature value; The control module is configured to calibrate the wafer box transmission system of the reaction chamber using the first expansion size and the second expansion size as calibration factors, so that the wafer box transmission system can pick up and place each wafer in the wafer box based on the calibration factors.

8. The system according to claim 7, characterized in that The computing module is further configured to: Based on the first material type and the second material type, respectively determining a first expansion coefficient of the material of the wafer box holder and a second expansion coefficient of the material of each of the wafer separation slots; Obtaining a first original length of the wafer box support at the initial temperature value and a second original length of each of the wafer separation grooves at the initial temperature value; Based on the first original length and the second original length, the first expansion size and the second expansion size are calculated respectively according to a preset material expansion formula, wherein the preset material expansion formula is a mathematical formula set in advance according to the expansion of the material at different temperatures.

9. An electronic device, characterized in that: The electronic device comprises: a processor and a memory storing a program; wherein the program comprises instructions, and when the instructions are executed by the processor, the processor is caused to perform the method according to any one of claims 1 to 6.

10. A non-transitory computer-readable storage medium storing computer instructions, characterized in that: The computer instructions are used to enable a computer to execute the method according to any one of claims 1 to 6.

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