Wafer edge washing method, edge washing equipment, device and electronic equipment

Abstract

The invention relates to a wafer edge washing method, edge washing equipment, a wafer edge washing device and electronic equipment, and relates to the technical field of semiconductors. The wafer edge washing method comprises the steps that a first area of the edge of a wafer is washed, washing liquid collected from each sub-area is detected, current data information of the washing liquid of the multiple sub-areas is obtained, and the current data information comprises current volume information of the washing liquid of the sub-areas and current concentration information of copper ions in the washing liquid; determining the edge washing uniformity of the wafer according to the current data information of the cleaning liquid of the plurality of sub-regions; according to the method, the current data information of the cleaning fluid of each sub-region in the edge cleaning process of the wafer is utilized to detect the edge cleaning uniformity of each sub-region in real time, and the edge cleaning effect of each sub-region is quantified through the current data information of the cleaning fluid of the plurality of sub-regions, so that optical detection is not needed, and the detection efficiency is improved. The detection process is not interfered by the surface quality and smoothness of the wafer, the detection difficulty is reduced, and the detection reliability is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer edge cleaning method and edge cleaning equipment, a device, and an electronic device. Background Art

[0002] The copper electroplating process in the copper manufacturing process will deposit a portion of copper on the edge of the wafer. In order to prevent the copper on the edge of the wafer from affecting the process and causing problems such as device short circuits, the copper on the edge of the wafer needs to be removed through a subsequent edge bevel removal (EBR). The edge bevel removal process is crucial to ensuring product quality and process stability.

[0003] Currently, optical methods are used to detect the accuracy and reliability of the edge cleaning process. However, due to the interference of wafer surface quality and finish, the reliability of optical edge cleaning process is low. Summary of the Invention

[0004] Based on this, it is necessary to provide a wafer edge cleaning method, edge cleaning equipment, and electronic equipment to address the problems in the prior art.

[0005] In a first aspect, the present disclosure provides a wafer edge cleaning method, the edge cleaning method comprising:

[0006] Cleaning a first area at an edge of a wafer, wherein the first area includes a plurality of sub-areas uniformly arranged along a circumference of the wafer;

[0007] detecting the cleaning fluid collected from each of the sub-regions to obtain current data information of the cleaning fluid in the sub-regions, the current data information including current volume information of the cleaning fluid in the sub-regions and current concentration information of copper ions in the cleaning fluid;

[0008] The edge cleaning uniformity of the wafer is determined based on the current data information of the cleaning liquid in the plurality of sub-areas.

[0009] In one embodiment, determining the detection result of the edge cleaning uniformity of the wafer according to the current data information of the cleaning liquid of the plurality of sub-areas includes:

[0010] Acquire current volume deviations of the cleaning solutions in the plurality of sub-areas, and current concentration deviations of copper ions in the cleaning solutions in the plurality of sub-areas;

[0011] If the current volume deviation of the cleaning fluid in at least two of the sub-areas exceeds the first preset deviation range, or the current concentration deviation of copper ions in the cleaning fluid in at least two of the sub-areas exceeds the second preset deviation range, the detection result of the edge cleaning uniformity of the wafer is unqualified.

[0012] In one embodiment, it further includes:

[0013] When the detection result of the edge cleaning uniformity of the wafer is unqualified, the cleaning parameters of the wafer are adjusted according to the detection result.

[0014] In one embodiment, it further includes:

[0015] Obtaining information on the total amount of copper in the cleaning solution of the plurality of sub-areas;

[0016] The edge cleaning width of the wafer is detected based on the total amount of copper information.

[0017] In one embodiment, determining the detection result of the wafer edge cleaning completion degree based on the total amount of copper information includes:

[0018] Obtaining total amount information of copper in the first area;

[0019] The total amount of copper in the cleaning solution of the plurality of sub-areas is compared with the total amount of copper in the first area. When the comparison result exceeds a third preset deviation range, the detection result of the edge cleaning width of the wafer is unqualified.

[0020] In a second aspect, the present disclosure provides a wafer edge cleaning device, comprising:

[0021] An edge cleaning machine is used to clean a first area of ​​an edge of a wafer, wherein the first area includes a plurality of sub-areas uniformly arranged along the circumference of the wafer;

[0022] A collecting tank, the collecting tank comprising a plurality of sub-collecting tanks distributed along the circumference of the wafer, wherein during the edge washing process, the plurality of sub-collecting tanks correspondingly collect the cleaning liquid dripping from the plurality of sub-areas;

[0023] a plurality of data acquisition mechanisms, respectively provided in the plurality of sub-collecting tanks, for detecting current data information of the cleaning liquid collected by the sub-collecting tanks, the data information including current volume information of the cleaning liquid in the sub-regions and current concentration information of copper ions in the cleaning liquid;

[0024] A controller is communicatively connected to the plurality of data acquisition mechanisms, and is used to receive the current data information of the cleaning fluid in the sub-areas detected by the plurality of data acquisition mechanisms, and determine the edge cleaning uniformity of the wafer based on the current data information of the cleaning fluid in the plurality of sub-areas.

[0025] In one embodiment, the data collection mechanism includes:

[0026] a liquid level sensor, disposed in the sub-collecting tank, for detecting current volume information of the cleaning liquid collected in the sub-collecting tank;

[0027] A copper ion detection sensor is provided in the sub-collecting tank, and is used to detect current copper ion concentration information of the cleaning liquid in the sub-collecting tank.

[0028] In one embodiment, the wafer edge cleaning equipment further includes:

[0029] a first driving mechanism, configured to drive the wafer to rotate so that the edge cleaning machine cleans the first area;

[0030] a second driving mechanism, drivingly connected to the collecting trough, and driving the collecting trough to rotate, so that the positions of the collecting trough and the wafer are relatively fixed during the process of the edge cleaning machine cleaning the wafer;

[0031] The controller is respectively connected to the first driving mechanism and the second driving mechanism, and the controller associates the first driving mechanism with the second driving mechanism so that the second driving mechanism drives the collecting trough and the wafer to rotate at the same speed.

[0032] In a third aspect, the present disclosure provides a wafer edge cleaning device, comprising:

[0033] A driving module, configured to drive the edge cleaning machine to clean a first area of ​​an edge of the wafer, wherein the first area includes a plurality of sub-areas uniformly arranged along the circumference of the wafer;

[0034] a detection module, configured to detect the cleaning fluid collected from each of the sub-regions, and obtain current data information of the cleaning fluid of the plurality of sub-regions, wherein the current data information includes current volume information of the cleaning fluid in the sub-regions and current concentration information of copper ions in the cleaning fluid;

[0035] A determination module is used to determine the edge cleaning uniformity of the wafer according to the current data information of the cleaning liquid in the multiple sub-areas.

[0036] In one embodiment, the determining module includes:

[0037] a first acquiring unit, configured to acquire current volume deviations of the cleaning solutions in the plurality of sub-regions and current concentration deviations of copper ions in the cleaning solutions in the plurality of sub-regions;

[0038] The first comparison unit is used to judge that the detection result of the edge cleaning uniformity of the wafer is unqualified when the current volume deviation of the cleaning fluid in at least two of the sub-areas exceeds the first preset deviation range, or the current concentration deviation of copper ions in the cleaning fluid in at least two of the sub-areas exceeds the second preset deviation range.

[0039] In one embodiment, the wafer edge cleaning device further includes:

[0040] The control module is used to adjust the cleaning parameters of the wafer cleaning machine according to the detection result when the detection result of the edge cleaning uniformity of the wafer is unqualified.

[0041] In one embodiment, the detection module is further used to obtain information on the total amount of copper in the cleaning solution of the plurality of sub-areas;

[0042] The determination module is further configured to detect the edge washing width of the wafer according to the total amount information of copper.

[0043] In one embodiment, the determining module further includes:

[0044] a second acquiring unit, configured to acquire information on the total amount of copper in the first area;

[0045] The second comparison module is used to compare the total amount of copper in the cleaning solution of the plurality of sub-areas with the total amount of copper in the first area. When the comparison result exceeds a third preset deviation range, the detection result of the edge cleaning width of the wafer is unqualified.

[0046] In a fourth aspect, the present disclosure provides an electronic device comprising a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the steps of the wafer edge cleaning method described in any one of the first aspects are implemented.

[0047] The unexpected effect of the present disclosure is: by cleaning the first area of ​​the edge of the wafer, detecting the cleaning liquid collected from each sub-area, obtaining current data information of the cleaning liquid in multiple sub-areas, the current data information includes the current volume information of the cleaning liquid in the sub-area and the current concentration information of copper ions in the cleaning liquid, and determining the uniformity of the edge cleaning of the wafer based on the current data information of the cleaning liquid in the multiple sub-areas; using the current data information of the cleaning liquid in each sub-area during the edge cleaning process of the wafer, the edge cleaning uniformity of each sub-area is detected in real time, and the edge cleaning effect of each sub-area is quantified based on the current data information of the cleaning liquid in multiple sub-areas, without the need for optical detection, the detection process will not be affected by the surface quality and smoothness of the wafer, reducing the detection difficulty and improving the detection reliability; by regularly collecting and analyzing the current data information of the cleaning liquid in each sub-area, the changing trend of the cleaning effect can be monitored in real time, which is conducive to timely discovering potential quality problems so as to facilitate the adoption of effective preventive measures. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0049] Figure 1 is a flow chart of a wafer edge cleaning method provided in one embodiment;

[0050] Figure 2 is a schematic diagram of a wafer provided in one embodiment;

[0051] Figure 3 A schematic diagram of the arrangement of a collection tank and wafers provided in one embodiment;

[0052] Figure 4 A schematic diagram of uneven edge cleaning of a wafer provided in an embodiment;

[0053] Figure 5 A schematic diagram of a qualified wafer edge cleaning width provided in an embodiment;

[0054] Figure 6 A schematic diagram of a wafer edge cleaning width that is too wide provided in an embodiment;

[0055] Figure 7 A schematic diagram of a wafer edge cleaning process with an overly narrow width provided in an embodiment;

[0056] Figure 8 A flowchart of a wafer edge cleaning method provided in another embodiment;

[0057] Figure 9 Schematic diagram of the structure of a wafer edge cleaning device provided in one embodiment;

[0058] Figure 10 is a block diagram of a wafer edge cleaning device provided in one embodiment;

[0059] Figure 11 FIG. 4 is a block diagram of an electronic device provided in one embodiment. DETAILED DESCRIPTION

[0060] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0061] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0062] As described in the background art, optical methods are used to detect the edge cleaning process in related technologies. However, due to the interference of wafer surface quality and smoothness, the optical method has low detection reliability for the edge cleaning process.

[0063] In particular, edge cleaning width control is the key to the edge cleaning process. If the edge is too wide, it will lead to loss of effective wafer area and affect production; if the edge is too narrow or the edge cleaning capacity is insufficient, it will cause copper residue in the edge area of ​​the wafer, increasing the risk of copper contamination.

[0064] According to an exemplary embodiment, the present disclosure provides a wafer edge cleaning method, and this embodiment is illustrated by applying the method to a terminal, wherein the terminal may be, but is not limited to, an edge cleaning device, various personal computers, laptops, smart phones, tablet computers, Internet of Things devices, and portable wearable devices. The Internet of Things devices may be smart speakers, smart TVs, smart air conditioners, smart car-mounted devices, projection devices, etc. Portable wearable devices may be smart watches, smart bracelets, head-mounted devices, etc. The head-mounted devices may be virtual reality (VR) devices, augmented reality (AR) devices, smart glasses, etc. It is understandable that the method may also be applied to servers, and may also be applied to systems including terminals and servers, and may be implemented through the interaction between the terminals and servers. As Figure 1 As shown, the wafer edge cleaning method includes the following steps S101 to S103:

[0065] Step S101 : cleaning a first area at the edge of a wafer, where the first area includes a plurality of sub-areas uniformly arranged along the circumference of the wafer.

[0066] In this embodiment, referring to Figure 2 、 Figure 3 The terminal controls the edge cleaning machine 410 to clean the first area 310 of the edge of the wafer 300. The edge cleaning machine applies cleaning liquid to the first area 310 of the wafer 300 through a nozzle, and cleans the wafer 300 with preset cleaning parameters (such as power, flow rate, and time) to remove copper metal in the first area 310.

[0067] The wafer 300 cleaned by the edge cleaning machine 410 has been subjected to a copper electroplating process, and a copper metal layer is deposited on the surface of the wafer 300. The first region 310 of the wafer 300 is an annular region at the circumferential edge of the wafer 300. The width of the first region 310 is defined according to process requirements.

[0068] In this embodiment, referring to Figure 2 The first region 310 of the wafer 300 is defined as a plurality of sub-regions 311 uniformly arranged along the circumference of the wafer 300. The number of sub-regions 311 is greater than or equal to two. For example, the first region 310 may include two sub-regions 311, three sub-regions 311, five sub-regions 311, eight sub-regions 311, or more sub-regions 311. In this embodiment, the first region 310 includes eight sub-regions 311-1 to 311-8.

[0069] Step S102: detecting the cleaning liquid collected from each sub-region to obtain current data information of the cleaning liquid in the multiple sub-regions, the current data information including current volume information of the cleaning liquid in the sub-region and current concentration information of copper ions in the cleaning liquid.

[0070] In this embodiment, the terminal collects the cleaning liquid used to clean the first area 310 by controlling a collection device, such as a collection tank 420. Figure 3 The collection tank 420 includes a plurality of sub-collection tanks 421. The number of sub-collection tanks 421 is the same as the number of sub-regions 311 in the first region 310. Each sub-collection tank 421 is used to collect cleaning liquid dripping from a corresponding sub-region 311. In this embodiment, the sub-collection tank 421 includes eight sub-collection tanks 421-1 to 421-8.

[0071] The terminal detects the current data information of the cleaning liquid collected from each sub-area 311 in real time to obtain the current data information of the cleaning liquid in the multiple sub-areas 311. In this embodiment, the current data information includes the current volume information of the cleaning liquid in the sub-area 311 and the current concentration information of the copper ions in the cleaning liquid.

[0072] It is understood that if the edge cleaning machine 410 uniformly cleans the edge of the wafer 300, then the cleaning solution used to clean each sub-area 311 and the copper ion concentration in the cleaning solution should be the same or similar. In this embodiment, the current data information includes the current volume information of the cleaning solution in the sub-area 311 and the current copper ion concentration information in the cleaning solution. The current data information is a key indicator for evaluating the edge cleaning effect of the edge cleaning machine 410 on the wafer 300.

[0073] Step S103: determining the edge cleaning uniformity of the wafer according to the current data information of the cleaning liquid in the plurality of sub-areas.

[0074] In this embodiment, the terminal determines whether the edge-washing width of the wafer 300 is uniform by comparing the current data information of the cleaning liquid in the multiple sub-areas 311 and according to the degree of difference in the current data information of the cleaning liquid in the multiple sub-areas 311. If the degree of difference in the current data information of the cleaning liquid in the multiple sub-areas 311 meets the edge-washing uniformity requirement of the wafer 300, the terminal determines that the edge-washing width of the wafer 300 is uniform, and the terminal controls the edge-washing machine to continue cleaning the first area 310 according to the current cleaning parameters until all the copper metal in the first area 310 is cleaned and removed. Figure 4 As shown, if the degree of difference in the current data information of the cleaning liquid in at least two sub-areas 311 among the multiple sub-areas 311 does not meet the edge cleaning uniformity requirements of the wafer 300, the terminal determines that the edge cleaning width of the wafer 300 is uneven, and the edge cleaning widths of each sub-area 311 are different. The terminal adjusts the cleaning parameters of the edge cleaning machine 410 to optimize the edge cleaning quality and the consistency of the edge cleaning width.

[0075] The above-mentioned wafer edge cleaning method cleans a first area of ​​the edge of the wafer, detects the cleaning liquid collected from each sub-area, and obtains current data information of the cleaning liquid in multiple sub-areas, wherein the current data information includes current volume information of the cleaning liquid in the sub-area and current concentration information of copper ions in the cleaning liquid. The edge cleaning uniformity of the wafer is determined based on the current data information of the cleaning liquid in the multiple sub-areas; the edge cleaning uniformity of each sub-area is detected in real time by using the current data information of the cleaning liquid in each sub-area during the wafer edge cleaning process, and the edge cleaning effect of each sub-area is quantified by the current data information of the cleaning liquid in the multiple sub-areas. There is no need to use optical detection, and the detection process will not be affected by the surface quality and smoothness of the wafer, which reduces the detection difficulty and improves the detection reliability; the above-mentioned wafer edge cleaning method can monitor the changing trend of the cleaning effect in real time by regularly collecting and analyzing the current data information of the cleaning liquid in each sub-area, which is conducive to timely discovering potential quality problems so as to take effective preventive measures.

[0076] In some embodiments, step S103 determines the detection result of the edge cleaning uniformity of the wafer based on the current data information of the cleaning liquid in the multiple sub-areas, including steps S1031 and S1032:

[0077] Step S1031: obtaining current volume deviations of the cleaning solutions in the plurality of sub-regions and current concentration deviations of copper ions in the cleaning solutions in the plurality of sub-regions;

[0078] In this embodiment, the terminal compares the collected current volume information of the cleaning fluid in each sub-area 311, calculates the current volume deviation of the cleaning fluid in each sub-area 311, and obtains the current volume deviation of the cleaning fluid in the multiple sub-areas 311. The current volume deviation of the cleaning fluid in the multiple sub-areas 311 includes the current volume deviation of the cleaning fluid in any two sub-areas 311 in the multiple sub-areas 311.

[0079] The terminal compares the collected current concentration information of the copper ions in the cleaning solution of each sub-area 311, calculates the current concentration deviation of the copper ions in the cleaning solution of each sub-area 311, and obtains the current concentration deviation of the copper ions in the cleaning solution of the multiple sub-areas 311. The current concentration deviation of the copper ions in the cleaning solution of the multiple sub-areas 311 includes the current concentration deviation of the copper ions in the cleaning solution of any two sub-areas 311 in the multiple sub-areas 311.

[0080] Step S1032: If the current volume deviation of the cleaning solution in at least two sub-areas exceeds the first preset deviation range, or the current concentration deviation of copper ions in the cleaning solution in at least two sub-areas exceeds the second preset deviation range, the detection result of the wafer edge cleaning uniformity is unqualified.

[0081] In this embodiment, the terminal compares the current volume deviation of the cleaning fluid in multiple sub-areas 311 with the first preset deviation range. If the current volume deviation of the cleaning fluid in at least two sub-areas 311 exceeds the first preset deviation range, the terminal determines that the detection result of the edge cleaning uniformity of the wafer 300 is unqualified, that is, the terminal determines that the widths of the sub-areas 311 of the first area 310 cleaned by the edge cleaning machine are uneven.

[0082] The terminal compares the current concentration deviation of copper ions in the cleaning solution of multiple sub-areas 311 with the second preset deviation range. The current concentration deviation of copper ions in the cleaning solution of at least two sub-areas 311 exceeds the second preset deviation range. The terminal determines that the detection result of the edge cleaning uniformity of the wafer 300 is unqualified, that is, the terminal determines that the width of each sub-area 311 of the first area 310 cleaned by the edge cleaning machine 410 is uneven.

[0083] In this embodiment, the current volume deviations of the cleaning liquids of the multiple sub-areas 311 are all within the first preset deviation range, and the current concentration deviations of the cleaning liquids of the multiple sub-areas 311 are all within the second preset deviation range, then the terminal judges that the detection result of the edge cleaning uniformity of the wafer 300 is qualified, that is, the terminal judges that the widths of the sub-areas 311 of the first area 310 cleaned by the edge cleaning machine 410 are uniform, and the terminal controls the edge cleaning machine 410 to continue cleaning the first area 310 according to the current cleaning parameters.

[0084] In this embodiment, the terminal can use an algorithm model (such as machine learning, deep learning, etc.) to analyze the historical edge washing data of the edge washing process, such as the historical volume deviation of the cleaning liquid in each sub-area 311, the historical concentration deviation of copper ions in the cleaning liquid in each sub-area 311, and the historical edge washing detection results, and set the first deviation range and the second deviation range according to the output result of the algorithm model.

[0085] Based on the above scheme, the terminal determines whether the edge cleaning uniformity of the wafer is qualified based on the current volume deviation of the cleaning fluid and the current concentration deviation of copper ions collected in each sub-area. This not only improves the accuracy and reliability of the detection, but also provides data support for the performance optimization and fault prediction of the edge cleaning machine, so as to timely discover and correct problems in the cleaning process and ensure the cleanliness and consistency of the wafer edge.

[0086] In some embodiments, after determining the wafer edge cleaning uniformity test result based on the current data information of the cleaning liquid in the multiple sub-areas in step S103, if the wafer edge cleaning uniformity test result is unqualified, the terminal further executes step S104:

[0087] Step S104: When the detection result of the wafer edge cleaning uniformity is unqualified, the cleaning parameters of the wafer are adjusted according to the detection result.

[0088] In this embodiment, when the terminal determines that the detection result of the edge cleaning uniformity of the wafer 300 is unqualified, the terminal adjusts the cleaning parameters of the edge cleaning machine 410 for cleaning the wafer based on the current volume deviation of the cleaning fluid in multiple sub-areas 311, the first preset deviation range, the current concentration deviation of copper ions in the cleaning fluid in multiple sub-areas 311, and the second preset deviation range.

[0089] In this embodiment, the terminal can use an algorithm model (such as machine learning, deep learning, etc.) to analyze the unevenness of the edge cleaning of each sub-area 311, obtain the adjusted cleaning parameters of the edge cleaning machine 410 for cleaning the wafer, and adjust the edge cleaning machine 410 according to the adjusted cleaning parameters, so that the edge cleaning machine 410 cleans the first area 310 according to the adjusted cleaning parameters (such as power, flow, time).

[0090] In this embodiment, when the detection result of the wafer edge cleaning uniformity is unqualified, the terminal adjusts the cleaning parameters of the edge cleaning machine to help improve the uniformity of the wafer edge cleaning width, thereby improving the quality of the wafer and the reliability of subsequent processing; at the same time, the terminal can accumulate and record edge cleaning data and optimize cleaning parameters, which can further improve the efficiency and effectiveness of wafer cleaning.

[0091] In some embodiments, the wafer edge cleaning method of this embodiment further performs steps S105 to S106 after edge cleaning is completed:

[0092] Step S105: obtaining information on the total amount of copper in the cleaning solution of the multiple sub-areas.

[0093] In this embodiment, after the terminal controls the edge cleaning machine 410 to complete edge cleaning of the first area 310 of the wafer 300, the terminal obtains the total amount of copper in the cleaning liquid collected in each sub-area 311, wherein the total amount of copper in the cleaning liquid is the total mass of metallic copper collected in each sub-area 311.

[0094] In this embodiment, the terminal can obtain the volume of the cleaning fluid of each sub-region 311 and the copper ion concentration of the cleaning fluid of each sub-region 311, calculate the mass of copper in the cleaning fluid of each sub-region 311 according to the volume of the cleaning fluid of each sub-region 311 and the copper ion concentration of the cleaning fluid of each sub-region, and accumulate the mass of copper in the cleaning fluid of each sub-region 311 to obtain the total amount of copper in the cleaning fluid of multiple sub-regions 311.

[0095] Step S106: Detecting the edge width of the wafer after cleaning based on the total amount of copper.

[0096] In this embodiment, the terminal calculates the edge cleaning width of the wafer 300 based on the total amount of copper in the cleaning solution of the multiple sub-areas 311 .

[0097] It is understood that the total amount of copper in the cleaning solution can reflect the area of ​​metallic copper removed from the wafer 300 during the edge cleaning process. Since the edge cleaning width is proportional to the area of ​​metallic copper removed (under consistent cleaning conditions), the edge cleaning width can be estimated by detecting the total amount of copper in the cleaning solution.

[0098] In this embodiment, the terminal can obtain the wash edge width based on the correspondence between the total amount of copper in the cleaning liquid and the wash edge width. The correspondence between the total amount of copper in the cleaning liquid and the wash edge width can be stored in an external database. The terminal can directly obtain the correspondence between the total amount of copper in the cleaning liquid and the wash edge width from the database and obtain the wash edge width based on the total amount of copper in the cleaning liquid. Alternatively, the terminal can calculate the wash edge width by establishing a mathematical model.

[0099] In this embodiment, the terminal can effectively detect the edge-washing width of the wafer, thereby improving the reliability of wafer edge-washing detection.

[0100] In some embodiments, step S106 determines the wafer edge cleaning completion test result based on the total amount of copper information, including steps S1061 and S1062:

[0101] Step S1061: Obtaining the total amount of copper in the first area.

[0102] In this embodiment, the terminal obtains thickness information of the copper metal layer in the first region 310. For example, the terminal can obtain the thickness information of the copper metal layer in the first region 310 through physical measurement or optical measurement. The terminal also obtains area information of the first region 310. For example, the terminal can obtain the area information of the first region 310 through image processing or laser scanning. Based on the thickness information of the copper metal layer in the first region 310 and the area information of the first region 310, the terminal calculates the total amount of copper in the first region 310. The total amount of copper in the first region 310 is the total mass of the metallic copper in the area to be cleaned during the edge cleaning process.

[0103] Step S1062: comparing the total amount of copper in the cleaning solution of the plurality of sub-regions with the total amount of copper in the first region. If the comparison result exceeds a third preset deviation range, the detection result of the edge width of the wafer is unqualified.

[0104] Reference Figure 5-Figure 7 As shown, the shaded area in the figure is the area without edge cleaning, the white area in the figure is the area after the copper metal layer is removed by edge cleaning, and the area between the dotted line and the outer boundary of the wafer 300 is the preset edge cleaning area.

[0105] In this embodiment, Figure 5 As shown, the terminal compares the total amount information of copper in the cleaning liquid of multiple sub-areas 311 with the total amount information of copper in the first area 310, and determines whether the comparison result exceeds the third preset deviation range. If the deviation between the total amount information of copper in the cleaning liquid of multiple sub-areas 311 and the total amount information of copper in the first area 310 is within the third preset deviation range, the detection result of the edge washing width of the wafer 300 is qualified.

[0106] The total amount of copper in the cleaning solution of the plurality of sub-areas 311 and the total amount of copper in the first area 310 exceed the third preset deviation range. Figure 7 As shown, the total amount of copper in the cleaning solution of the plurality of sub-areas 311 is greater than the total amount of copper in the first area 310 and exceeds the third preset deviation range, then the terminal determines that the edge cleaning width is too wide, and the detection result of the edge cleaning width of the wafer 300 is unqualified; Figure 6As shown, the total amount of copper in the cleaning liquid of multiple sub-areas 311 is smaller than the total amount of copper in the first area 310 and exceeds the third preset deviation range. The terminal determines that the edge cleaning width is too small, and the detection result of the edge cleaning width of the wafer 300 is unqualified.

[0107] In this embodiment, the terminal obtains the detection result of the edge washing width of the wafer 300 based on the total amount information of copper in the cleaning liquid of multiple sub-areas 311 and the total amount information of copper in the first area 310. The detection process is simpler and more intuitive, and effective detection of the edge washing width of the wafer 300 can be achieved, thereby improving the detection reliability of the edge washing of the wafer 300.

[0108] In some embodiments, when the detection result of the edge washing width of the wafer 300 is unqualified, the terminal adjusts the starting position of the edge washing machine 410 for cleaning the wafer 300 according to the detection result of the edge washing width. For example, if the edge washing width is detected to be too large, the terminal can adjust the starting position of the nozzle of the edge washing machine 410 to be further away from the center of the wafer 300; if the edge washing width is detected to be too small, the starting position of the nozzle of the edge washing machine 410 is adjusted to be closer to the center of the wafer 300.

[0109] In addition, the terminal can also adjust other edge cleaning parameters, such as the cleaning power of the edge cleaning machine 410, the flow rate of the cleaning liquid, the spray angle of the nozzle, the rotation speed of the wafer, etc., to further optimize the edge cleaning effect.

[0110] When the edge cleaning operation is performed on the wafer 300 next time, after adjusting the parameters, the terminal controls the edge cleaning machine 410 to perform the edge cleaning process on the next wafer 300 according to the adjusted edge cleaning parameters, so as to continuously improve and optimize the quality and efficiency of the edge cleaning of the wafer 300.

[0111] According to an exemplary embodiment, the wafer edge cleaning method of this embodiment is as follows: Figure 8 As shown, it includes steps S201 to S207:

[0112] Step S201: cleaning a first area at the edge of a wafer, where the first area includes a plurality of sub-areas uniformly arranged along the circumference of the wafer.

[0113] Step S202: Detect the cleaning liquid collected from each sub-region to obtain current data information of the cleaning liquid in the multiple sub-regions, where the current data information includes current volume information of the cleaning liquid in the sub-region and current concentration information of copper ions in the cleaning liquid.

[0114] Step S203: Determine the wafer edge cleaning uniformity based on the current data information of the cleaning solution in the multiple sub-regions. In this embodiment, the terminal obtains the current volume deviation of the cleaning solution in the multiple sub-regions and the current copper ion concentration deviation of the cleaning solution in the multiple sub-regions. If the current volume deviation of the cleaning solution in at least two sub-regions exceeds a first preset deviation range, or the current copper ion concentration deviation of the cleaning solution in at least two sub-regions exceeds a second preset deviation range, the terminal determines that the wafer edge cleaning uniformity test result is unqualified.

[0115] Step S204: When the detection result of the wafer edge cleaning uniformity is unqualified, the cleaning parameters of the wafer are adjusted according to the detection result.

[0116] Step S205: obtaining information on the total amount of copper in the cleaning solution of the multiple sub-areas.

[0117] Step S206: Detecting the wafer edge width based on the total copper content information. In this embodiment, the terminal obtains the total copper content information for the first region. The terminal compares the total copper content information in the cleaning solution of the multiple subregions with the total copper content information for the first region. If the comparison result exceeds a third preset deviation range, the terminal determines that the wafer edge width detection result is unqualified.

[0118] Step S207: When the detection result of the edge-wash width of the wafer is unqualified, the initial position of the wafer for cleaning is adjusted according to the detection result of the edge-wash width.

[0119] The wafer edge cleaning method disclosed herein collects cleaning liquid dripping during the edge cleaning process, and detects the removal of copper metal in the first area of ​​the wafer edge during the edge cleaning process by using the volume of the collected cleaning liquid and the concentration of copper ions, thereby achieving real-time monitoring of the edge cleaning width. The monitoring process has the advantages of being non-destructive and highly real-time, and can promptly detect and correct defects such as uneven edge cleaning width during the production process.

[0120] At the same time, the present disclosure can obtain more detailed and accurate data related to the edge cleaning process by real-time monitoring of the copper ion concentration and the volume of the cleaning liquid during the wafer edge cleaning process. These data can not only evaluate the edge cleaning efficiency (the amount of copper metal removed per unit time), but also promptly detect abnormal fluctuations in the edge cleaning process, such as sudden increase or decrease in concentration, abnormal changes in volume, etc., thereby effectively avoiding the problem of large-scale product scrapping due to process abnormalities.

[0121] The wafer edge cleaning method disclosed herein can also construct an advanced process control (APC) model based on the copper ion concentration information and solution volume information of each wafer after edge cleaning. The APC model is used to analyze the trends and correlations of edge cleaning data, identify key factors affecting the edge cleaning effect, and automatically adjust edge cleaning process parameters such as nozzle position and wafer rotation speed accordingly. The APC model can achieve refined control of the edge cleaning process, improve equipment production efficiency, optimize process stability, and ultimately enhance product quality.

[0122] It should be understood that, although the various steps in the flowcharts involved in the various embodiments described above are displayed in sequence according to the instructions of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the various embodiments described above can include multiple steps or multiple stages, and these steps or stages are not necessarily executed and completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0123] According to an exemplary embodiment, the present disclosure provides a wafer edge cleaning device for implementing the above-mentioned wafer edge cleaning method, such as Figure 9 As shown, the wafer edge cleaning equipment includes an edge cleaning machine 410 , a collection tank 420 , a plurality of data acquisition mechanisms 430 and a controller 440 .

[0124] like Figure 9 As shown, the edge cleaning machine 410 is used to clean the first area 310 of the edge of the wafer 300, and the first area 310 includes a plurality of sub-areas 311 uniformly arranged along the circumference of the wafer 300. The wafer cleaned by the edge cleaning machine 410 is a wafer 300 that has undergone a copper electroplating process, and a copper metal layer is deposited on the surface of the wafer 300. The first area 310 of the wafer 300 refers to the annular area at the circumferential edge of the wafer 300, and the width of the first area 310 is defined according to the process requirements. In this embodiment, the first area 310 of the wafer 300 is defined as a plurality of sub-areas 311 uniformly arranged along the circumference of the wafer, and the number of sub-areas 311 is greater than or equal to two. The edge cleaning machine 410 can spray cleaning liquid to the first area 310 of the wafer 300 through a nozzle to clean and remove the copper metal in the first area 310.

[0125] The collection tank 420 includes multiple sub-collection tanks 421 distributed along the circumference of the wafer 300. During the edge cleaning process of the wafer 300, the multiple sub-collection tanks 421 collect cleaning fluid dripping from the multiple sub-regions 311. When the edge cleaning machine 410 is cleaning the wafer, the collection tank 420 is located on the periphery of the wafer 300. The multiple sub-collection tanks 421 of the collection tank 420 are all adjacent to the peripheral edge of the wafer 300. Each sub-collection tank 421 is used to collect cleaning fluid dripping from each sub-region 311. The cleaning fluid contains dissolved copper ions.

[0126] Multiple data acquisition mechanisms 430 are respectively arranged in multiple sub-collection tanks 421, for detecting current data information of the cleaning liquid collected by the sub-collection tanks 421, the data information including the current volume information of the cleaning liquid in the sub-area 311 and the current concentration information of copper ions in the cleaning liquid.

[0127] The controller 440 is in communication connection with the plurality of data acquisition mechanisms 430 . The controller 440 is used to receive the current data information of the cleaning liquid in the sub-areas 311 detected by the plurality of data acquisition mechanisms 430 , and determine the edge cleaning uniformity of the wafer 300 based on the current data information of the cleaning liquid in the plurality of sub-areas 311 .

[0128] The wafer edge cleaning equipment of this embodiment collects the cleaning liquid dripping from multiple sub-areas 311 during the edge cleaning process of the wafer 300 through multiple sub-collection tanks 421 of the collection tank 420, and detects the current data information of the cleaning liquid collected by the sub-collection tank 421 through the data acquisition mechanism 430. The controller 440 obtains the edge cleaning effect of each sub-area 311 through the current data information of the cleaning liquid in the multiple sub-areas 311. There is no need to use optical detection, and the detection process will not be affected by the surface quality and smoothness of the wafer 300, which reduces the difficulty of detection and improves the detection reliability.

[0129] In some embodiments, as Figure 9 As shown, the data acquisition mechanism 430 includes a liquid level sensor 431 and a copper ion detection sensor 432; wherein, the liquid level sensor 431 is arranged in the sub-collection tank 421, and the liquid level sensor 431 is used to detect the current volume information of the cleaning liquid collected in the sub-collection tank 421; the copper ion detection sensor 432 is arranged in the sub-collection tank 421, and the copper ion detection sensor is used to detect the current copper ion concentration information of the cleaning liquid in the sub-collection tank 421.

[0130] In some embodiments, as Figure 9 As shown, the wafer edge cleaning equipment also includes:

[0131] The first driving mechanism 450 is used to drive the wafer 300 to rotate, so that the edge cleaning machine 410 cleans the first area 310 .

[0132] The second driving mechanism 460 is driven and connected to the collection tank 420. The second driving mechanism 460 drives the collection tank 420 to rotate so that the positions of the collection tank 420 and the wafer 300 are relatively fixed during the process of the edge washing machine 410 cleaning the wafer 300; the controller 440 is controlled and connected to the first driving mechanism 450 and the second driving mechanism 460 respectively. The controller 440 associates the first driving mechanism 450 and the second driving mechanism 460 so that the second driving mechanism 460 drives the collection tank 420 and the wafer 300 to rotate at the same speed.

[0133] In this way, it can be ensured that during the edge washing process of the wafer 300, the positions of the collection tank 420 and the wafer 300 are relatively fixed, so that the cleaning liquid dripping from the wafer 300 can fall into the collection tank 420, and avoid the cleaning liquid dripping outside the collection tank 420 to affect the detection results.

[0134] In this embodiment, Figure 9 As shown, the wafer edge cleaning equipment also includes:

[0135] The wafer support mechanism 470 is used to support the wafer 300. The first drive mechanism 450 is drivably connected to the wafer support mechanism 470. During the edge cleaning process of the wafer 300, the first drive mechanism 450 drives the wafer support mechanism 470 to rotate, thereby rotating the wafer 300, thereby enabling the edge cleaning machine 410 to evenly clean the first area 310 of the edge of the wafer 300 and remove copper metal from the first area 310.

[0136] In some embodiments, the second driving mechanism 460 can also drive the collecting tank 420 to move up and down relative to the wafer supporting mechanism 470 .

[0137] For example, after the wafer 300 is transferred and placed on the wafer supporting mechanism 470, the controller 440 controls the second driving mechanism 460 to drive the collection tank 420 to rise, and the collection tank 420 rises to the same height as the wafer 300, and the collection tank 420 surrounds and rests on the outer edge of the wafer 300. Then, the controller 440 controls the edge cleaning machine 410 to spray cleaning liquid onto the first area 310 of the wafer 300, performing an edge cleaning operation on the wafer 300 and removing copper from the first area 310. Simultaneously, the controller 440 controls the first drive mechanism 450 to rotate the wafer support mechanism 470 to rotate the wafer 300, allowing the edge cleaning machine 410 to evenly clean the first area 310 of the edge of the wafer 300. The controller 440 controls the second drive mechanism 460 to rotate the collection tank 420. The collection tank 420 and the wafer 300 rotate at the same speed to keep the collection tank 420 and the wafer 300 relatively stationary. Each sub-collection tank 421 of the collection tank 420 collects cleaning liquid dripping from each sub-area 311. After the wafer edge cleaning is completed, the controller 440 controls the second drive mechanism 460 to lower the collection tank 420, transferring the cleaned wafer 300 and draining the cleaning liquid in the collection tank 420 to the outside of the equipment.

[0138] In some embodiments, as Figure 9 As shown, the collecting tank 420 has a retractable baffle, which can be extended when collecting the cleaning liquid and retracted after stopping collecting the cleaning liquid.

[0139] In some embodiments, as Figure 9 As shown, controller 440 is controllably connected to edge cleaning machine 410. When controller 440 determines that the edge cleaning uniformity test result of wafer 300 is unqualified, controller 440 adjusts the cleaning parameters of edge cleaning machine 410 for cleaning the wafer based on the current volume deviation of the cleaning solution in the multiple sub-regions 311, the first preset deviation range, the current concentration deviation of copper ions in the cleaning solution in the multiple sub-regions 311, and the second preset deviation range. Controller 440 adjusts edge cleaning machine 410 based on the adjusted cleaning parameters, so that edge cleaning machine 410 cleans the first region 310 according to the adjusted cleaning parameters (e.g., power, flow rate, time).

[0140] Based on the same inventive concept, the embodiments of the present disclosure also provide a wafer edge cleaning device for implementing the aforementioned wafer edge cleaning method. The solution provided by this device is similar to the solution described in the aforementioned method. Therefore, the specific limitations of one or more wafer edge cleaning device embodiments provided below can be found in the above-mentioned limitations of the wafer edge cleaning method and will not be repeated here.

[0141] According to an exemplary embodiment, the present disclosure provides a wafer edge cleaning device, such as Figure 10As shown, the wafer edge cleaning device includes:

[0142] A driving module 501 is configured to drive an edge cleaning machine to clean a first area of ​​an edge of a wafer, where the first area includes a plurality of sub-areas uniformly arranged along the circumference of the wafer;

[0143] A detection module 502 is configured to detect the cleaning fluid collected from each sub-region and obtain current data information of the cleaning fluid in the multiple sub-regions, wherein the current data information includes current volume information of the cleaning fluid in the sub-region and current concentration information of copper ions in the cleaning fluid;

[0144] The determination module 503 is configured to determine the edge cleaning uniformity of the wafer according to the current data information of the cleaning liquid in the plurality of sub-areas.

[0145] In some embodiments, the determination module 503 includes:

[0146] a first acquiring unit, configured to acquire current volume deviations of the cleaning fluids of the plurality of sub-regions and current concentration deviations of copper ions of the cleaning fluids of the plurality of sub-regions;

[0147] The first comparison unit is used to judge that the detection result of the wafer edge cleaning uniformity is unqualified when the current volume deviation of the cleaning fluid in at least two sub-areas exceeds the first preset deviation range, or the current concentration deviation of copper ions in the cleaning fluid in at least two sub-areas exceeds the second preset deviation range.

[0148] In some embodiments, the wafer edge cleaning device further includes:

[0149] The control module is used to adjust the cleaning parameters of the edge cleaning machine for cleaning the wafer according to the detection result when the detection result of the edge cleaning uniformity of the wafer is unqualified.

[0150] In some embodiments, the detection module 502 is further configured to obtain information on the total amount of copper in the cleaning solution of the plurality of sub-regions;

[0151] The determination module 503 is further configured to detect the edge cleaning width of the wafer according to the total amount of copper information.

[0152] In some embodiments, the determination module 503 further includes:

[0153] A second acquiring unit is configured to acquire total amount information of copper in the first area;

[0154] The second comparison module is used to compare the total amount of copper in the cleaning solution of the multiple sub-areas with the total amount of copper in the first area. When the comparison result exceeds the third preset deviation range, the detection result of the edge width of the wafer is unqualified.

[0155] According to an exemplary embodiment, the present disclosure provides an electronic device including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the steps of the wafer edge cleaning method in the above-mentioned method embodiments are implemented.

[0156] In an exemplary embodiment, an electronic device is provided. The electronic device may be a terminal, and its internal structure diagram may be as shown in FIG. Figure 11 As shown. The electronic device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are connected to the system bus via the input / output interface. The processor of the electronic device is used to provide computing and control capabilities. The memory of the electronic device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer program in the non-volatile storage medium. The input / output interface of the electronic device is used to exchange information between the processor and an external device. The communication interface of the electronic device is used to communicate with an external terminal in a wired or wireless manner. The wireless manner can be implemented through WIFI, a mobile cellular network, NFC (near field communication), or other technologies. When the computer program is executed by the processor, a wafer edge cleaning method is implemented.

[0157] Those skilled in the art will understand that Figure 11 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the electronic device to which the solution of the present application is applied. The specific electronic device may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0158] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in the above-mentioned method embodiments are implemented.

[0159] In one embodiment, a computer program product is provided, including a computer program, which implements the steps in the above method embodiments when executed by a processor.

[0160] It should be noted that the edge washing information and data involved in this application (including but not limited to data used for analysis, stored data, displayed data, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant regulations.

[0161] Those skilled in the art will appreciate that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the above-mentioned embodiments. In particular, any reference to memory, database, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The databases involved in the various embodiments provided herein may include at least one of a relational database and a non-relational database. Non-relational databases may include, but are not limited to, distributed databases based on blockchains. The processors involved in the various embodiments provided herein may be, but are not limited to, general-purpose processors, central processing units (CPUs), graphics processing units (GPUs), digital signal processors (DSPs), programmable logic devices (PLDs), data processing logic devices based on quantum computing, and the like.

[0162] The unexpected effects of the present disclosure are: cleaning a first area of ​​the edge of a wafer by a side cleaning machine, detecting the cleaning liquid collected from each sub-area, obtaining current data information of the cleaning liquid in multiple sub-areas, the current data information including current volume information of the cleaning liquid in the sub-area and current concentration information of copper ions in the cleaning liquid, and determining the uniformity of the wafer side cleaning based on the current data information of the cleaning liquid in the multiple sub-areas; utilizing the current data information of the cleaning liquid in each sub-area during the wafer side cleaning process, performing real-time detection of the side cleaning uniformity of each sub-area, quantifying the side cleaning effect of each sub-area based on the current data information of the cleaning liquid in the multiple sub-areas, without the need for optical detection, and the detection process will not be affected by the surface quality and smoothness of the wafer, thereby reducing the detection difficulty and improving the detection reliability; the above-mentioned wafer side cleaning method can monitor the changing trend of the cleaning effect in real time by regularly collecting and analyzing the current data information of the cleaning liquid in each sub-area, which is conducive to timely discovering potential quality problems so as to facilitate the adoption of effective preventive measures.

[0163] The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0164] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A wafer edge cleaning method, characterized in that: The edge washing method comprises: Cleaning a first area at an edge of a wafer, wherein the first area includes a plurality of sub-areas uniformly arranged along a circumference of the wafer; detecting the cleaning fluid collected from each of the sub-regions to obtain current data information of the cleaning fluid in the sub-regions, the current data information including current volume information of the cleaning fluid in the sub-regions and current concentration information of copper ions in the cleaning fluid; The edge cleaning uniformity of the wafer is determined based on the current data information of the cleaning liquid in the plurality of sub-areas.

2. The wafer edge cleaning method according to claim 1, characterized in that: Determining the detection result of the edge cleaning uniformity of the wafer according to the current data information of the cleaning liquid of the plurality of sub-areas includes: Acquire current volume deviations of the cleaning solutions in the plurality of sub-areas, and current concentration deviations of copper ions in the cleaning solutions in the plurality of sub-areas; If the current volume deviation of the cleaning fluid in at least two of the sub-areas exceeds the first preset deviation range, or the current concentration deviation of copper ions in the cleaning fluid in at least two of the sub-areas exceeds the second preset deviation range, the detection result of the edge cleaning uniformity of the wafer is unqualified.

3. The wafer edge cleaning method according to claim 2, characterized in that: Also includes: When the detection result of the edge cleaning uniformity of the wafer is unqualified, the cleaning parameters of the wafer are adjusted according to the detection result.

4. The wafer edge cleaning method according to claim 1, wherein: Also includes: Obtaining information on the total amount of copper in the cleaning solution of the plurality of sub-areas; The edge cleaning width of the wafer is detected based on the total amount of copper information.

5. The wafer edge cleaning method according to claim 4, characterized in that: The step of determining the wafer edge cleaning completion degree detection result based on the total amount of copper includes: Obtaining total amount information of copper in the first area; The total amount of copper in the cleaning solution of the plurality of sub-areas is compared with the total amount of copper in the first area. When the comparison result exceeds a third preset deviation range, the detection result of the edge cleaning width of the wafer is unqualified.

6. A wafer edge cleaning device, characterized in that: include: An edge cleaning machine is used to clean a first area of ​​an edge of a wafer, wherein the first area includes a plurality of sub-areas uniformly arranged along the circumference of the wafer; A collecting tank, the collecting tank comprising a plurality of sub-collecting tanks distributed along the circumference of the wafer, wherein during the edge washing process, the plurality of sub-collecting tanks correspondingly collect the cleaning liquid dripping from the plurality of sub-areas; a plurality of data acquisition mechanisms, respectively provided in the plurality of sub-collecting tanks, for detecting current data information of the cleaning liquid collected by the sub-collecting tanks, the data information including current volume information of the cleaning liquid in the sub-regions and current concentration information of copper ions in the cleaning liquid; A controller is communicatively connected to the plurality of data acquisition mechanisms, and is used to receive the current data information of the cleaning fluid in the sub-areas detected by the plurality of data acquisition mechanisms, and determine the edge cleaning uniformity of the wafer based on the current data information of the cleaning fluid in the plurality of sub-areas.

7. The wafer edge cleaning equipment according to claim 6, characterized in that: The data collection mechanism includes: a liquid level sensor, disposed in the sub-collecting tank, for detecting current volume information of the cleaning liquid collected in the sub-collecting tank; A copper ion detection sensor is provided in the sub-collecting tank, and is used to detect current copper ion concentration information of the cleaning liquid in the sub-collecting tank.

8. The wafer edge cleaning equipment according to claim 6, characterized in that: The wafer edge cleaning equipment further includes: a first driving mechanism, configured to drive the wafer to rotate so that the edge cleaning machine cleans the first area; a second driving mechanism, drivingly connected to the collecting trough, and driving the collecting trough to rotate, so that the positions of the collecting trough and the wafer are relatively fixed during the process of the wafer cleaning machine; The controller is respectively connected to the first driving mechanism and the second driving mechanism, and the controller associates the first driving mechanism and the second driving mechanism so that the second driving mechanism drives the collecting trough and the wafer to rotate at the same speed.

9. A wafer edge cleaning device, characterized in that: include: A driving module, configured to drive the edge cleaning machine to clean a first area of ​​an edge of the wafer, wherein the first area includes a plurality of sub-areas uniformly arranged along the circumference of the wafer; a detection module, configured to detect the cleaning fluid collected from each of the sub-regions, and obtain current data information of the cleaning fluid of the plurality of sub-regions, wherein the current data information includes current volume information of the cleaning fluid in the sub-regions and current concentration information of copper ions in the cleaning fluid; A determination module is used to determine the edge cleaning uniformity of the wafer according to the current data information of the cleaning liquid in the multiple sub-areas.

10. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the wafer edge cleaning method according to any one of claims 1 to 5 are implemented.

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