Wafer edge cleaning methods, equipment, devices, and electronic devices

Abstract

This disclosure relates to a wafer edge cleaning method, equipment, apparatus, and electronic device, belonging to the field of semiconductor technology. The wafer edge cleaning method cleans a first region at the edge of the wafer, detects the cleaning solution collected from each sub-region, and obtains current data information of the cleaning solution in multiple sub-regions. This current data information includes the current volume of the cleaning solution in each sub-region and the current concentration of copper ions in the cleaning solution. Based on this current data information, the edge cleaning uniformity of the wafer is determined. By utilizing the current data information of the cleaning solution in each sub-region during the wafer edge cleaning process, the edge cleaning uniformity of each sub-region is detected in real time. The edge cleaning effect of each sub-region is quantified through the current data information of the cleaning solution in multiple sub-regions. This eliminates the need for optical detection methods, and the detection process is not affected by wafer surface quality and smoothness, reducing detection difficulty and improving detection reliability.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a wafer edge washing method, washing equipment, apparatus, and electronic equipment. Background Technology

[0002] In copper plating processes, copper is deposited at the edges of the wafer. To prevent the copper at the wafer edges from affecting the process and causing short circuits in devices, the copper at the wafer edges needs to be removed through a subsequent edge bevel removal (EBR) process. The edge bevel removal process is crucial for ensuring product quality and process stability.

[0003] Currently, optical methods are used to inspect the accuracy and reliability of edge-washing processes. However, the reliability of optical methods for inspecting edge-washing processes is relatively low due to interference from wafer surface quality and smoothness. Summary of the Invention

[0004] Therefore, it is necessary to provide a wafer edge washing method, washing equipment, and electronic equipment to address the problems in the existing technology.

[0005] In a first aspect, this disclosure provides a wafer edge washing method, the edge washing method comprising:

[0006] A first region is cleaned at the edge of the wafer, the first region comprising a plurality of sub-regions uniformly arranged along the circumference of the wafer;

[0007] The cleaning fluid collected from each of the sub-regions is detected to obtain current data information of the cleaning fluid in multiple sub-regions. The current data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid.

[0008] The edge washing uniformity of the wafer is determined based on the current data information of the cleaning fluid in the multiple sub-regions.

[0009] In one embodiment, determining the detection result of the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in the plurality of sub-regions includes:

[0010] Obtain the current volume deviation of the cleaning fluid in the multiple sub-regions, and the current concentration deviation of copper ions in the cleaning fluid in the multiple sub-regions;

[0011] If the current volume deviation of the cleaning solution in at least two of the sub-regions exceeds the first preset deviation range, or if the current concentration deviation of copper ions in the cleaning solution in at least two of the sub-regions exceeds the second preset deviation range, then the test result of the edge washing uniformity of the wafer is unqualified.

[0012] In one embodiment, it further includes:

[0013] When the test result of the edge washing uniformity of the wafer is unqualified, the cleaning parameters for cleaning the wafer are adjusted according to the test result.

[0014] In one embodiment, it further includes:

[0015] Obtain information on the total amount of copper in the cleaning solution of multiple sub-regions;

[0016] The edge-washing width of the wafer is detected based on the total amount of copper.

[0017] In one embodiment, determining the detection result of the wafer's edge-washing completion degree based on the total amount of copper includes:

[0018] Obtain the total amount of copper in the first region;

[0019] If the total amount of copper in the cleaning solution of multiple sub-regions is compared with the total amount of copper in the first region, and the comparison result exceeds a third preset deviation range, then the detection result of the edge washing width of the wafer is unqualified.

[0020] Secondly, this disclosure provides a wafer edge washing apparatus, comprising:

[0021] An edge cleaning machine is used to clean a first region of the edge of a wafer, the first region comprising a plurality of sub-regions uniformly arranged along the circumference of the wafer.

[0022] The collection tank includes multiple sub-collection tanks distributed along the circumference of the wafer. During the edge washing process, the multiple sub-collection tanks collect the cleaning liquid dripping from the multiple sub-regions.

[0023] Multiple data acquisition mechanisms are respectively located in multiple sub-collection tanks, and are used to detect the current data information of the cleaning fluid collected in the sub-collection tanks. The data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid.

[0024] A controller is communicatively connected to multiple data acquisition mechanisms. The controller is used to receive the current data information of the cleaning fluid in the sub-region detected by the multiple data acquisition mechanisms, and to determine the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in the multiple sub-regions.

[0025] In one embodiment, the data acquisition mechanism includes:

[0026] A liquid level sensor is installed in the sub-collection tank, and the liquid level sensor is used to detect the current volume information of the cleaning liquid collected in the sub-collection tank;

[0027] A copper ion detection sensor is installed in the sub-collection tank, and the copper ion detection sensor is used to detect the current copper ion concentration information of the cleaning solution in the sub-collection tank.

[0028] In one embodiment, the wafer edge washing equipment further includes:

[0029] A first driving mechanism is used to drive the wafer to rotate so that the edge washing machine cleans the first area;

[0030] The second driving mechanism is connected to the collection tank and drives the collection tank to rotate so that the position of the collection tank and the wafer is relatively fixed during the process of the edge washing machine cleaning the wafer.

[0031] The controller is connected to the first drive mechanism and the second drive mechanism respectively. The controller associates the first drive mechanism and the second drive mechanism so that the second drive mechanism drives the collection tank and the wafer to rotate at the same speed.

[0032] Thirdly, this disclosure provides a wafer edge washing apparatus, comprising:

[0033] A drive module is used to drive an edge cleaning machine to clean a first region of the edge of a wafer, the first region comprising a plurality of sub-regions uniformly arranged along the circumference of the wafer.

[0034] The detection module is used to detect the cleaning fluid collected from each of the sub-regions and obtain the current data information of the cleaning fluid in the multiple sub-regions. The current data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid.

[0035] The determination module is used to determine the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in the multiple sub-regions.

[0036] In one embodiment, the determining module includes:

[0037] The first acquisition unit is used to acquire the current volume deviation of the cleaning fluid in the multiple sub-regions and the current concentration deviation of copper ions in the cleaning fluid in the multiple sub-regions.

[0038] The first comparison unit is used to determine that the detection result of the edge washing uniformity of the wafer is unqualified if the current volume deviation of the cleaning solution in at least two of the sub-regions exceeds a first preset deviation range, or if the current concentration deviation of copper ions in the cleaning solution in at least two of the sub-regions exceeds a second preset deviation range.

[0039] In one embodiment, the wafer edge washing apparatus further includes:

[0040] The control module is used to adjust the cleaning parameters of the edge washing machine for cleaning the wafer according to the detection result when the edge washing uniformity detection result is unqualified.

[0041] In one embodiment, the detection module is further configured to obtain information on the total amount of copper in the cleaning fluid of the multiple sub-regions;

[0042] The determining module is also used to detect the edge-washing width of the wafer based on the total amount of copper information.

[0043] In one embodiment, the determining module further includes:

[0044] The second acquisition unit is used to acquire information about the total amount of copper in the first region;

[0045] The second comparison module is used to compare the total amount of copper in the cleaning solution of the multiple sub-regions with the total amount of copper in the first region. If the comparison result exceeds the third preset deviation range, the detection result of the edge washing width of the wafer is unqualified.

[0046] Fourthly, this disclosure provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps of the wafer edge washing method described in any one of the first aspects.

[0047] An unexpected benefit of this disclosure is that by cleaning the first region of the wafer edge, the cleaning solution collected from each sub-region is detected, obtaining current data information of the cleaning solution in multiple sub-regions. This current data includes the current volume of the cleaning solution in each sub-region and the current concentration of copper ions in the cleaning solution. Based on this current data information, the edge cleaning uniformity of the wafer is determined. By utilizing the current data information of the cleaning solution in each sub-region during the wafer edge cleaning process, the edge cleaning uniformity of each sub-region can be detected in real time. The edge cleaning effect of each sub-region is quantified using the current data information of the cleaning solution in multiple sub-regions. This eliminates the need for optical methods and the detection process is not affected by wafer surface quality and smoothness, reducing detection difficulty and improving detection reliability. By periodically collecting and analyzing the current data information of the cleaning solution in each sub-region, the changing trend of the cleaning effect can be monitored in real time, facilitating the timely detection of potential quality problems and enabling the implementation of effective preventative measures. Attached Figure Description

[0048] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0049] Figure 1 This is a flowchart of a wafer edge washing method provided in one embodiment;

[0050] Figure 2 This is a schematic diagram of a wafer provided in one embodiment;

[0051] Figure 3 This is a schematic diagram illustrating the arrangement of the collection tank and the wafer in one embodiment;

[0052] Figure 4 This is a schematic diagram of uneven wafer edge washing provided in one embodiment;

[0053] Figure 5 This is a schematic diagram illustrating the acceptable wafer edge washing width in one embodiment;

[0054] Figure 6 This is a schematic diagram illustrating an example of excessively wide wafer edge washing width.

[0055] Figure 7 This is a schematic diagram illustrating an example of wafer edge washing width that is too narrow.

[0056] Figure 8 A flowchart of a wafer edge washing method provided in another embodiment;

[0057] Figure 9 This is a schematic diagram of the structure of a wafer edge washing device provided in one embodiment;

[0058] Figure 10 This is a block diagram of a wafer edge washing apparatus provided in one embodiment;

[0059] Figure 11 This is a block diagram of an electronic device provided in one embodiment. Detailed Implementation

[0060] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate preferred embodiments of the application. However, this application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0061] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0062] As described in the background section, optical methods are used to inspect the edge-washing process in related technologies. However, the reliability of optical methods for inspecting the edge-washing process is low due to interference from wafer surface quality and smoothness.

[0063] In particular, the control of the edge washing width is the key to the edge washing process. If the edge washing is too wide, it will lead to the loss of the effective area of ​​the wafer and affect the yield. If the edge washing is too narrow or the edge washing capacity is insufficient, it will cause copper residue in the edge area of ​​the wafer and increase the risk of copper contamination.

[0064] According to an exemplary embodiment, this disclosure provides a wafer edge washing method. This embodiment illustrates the application of this method to a terminal, where the terminal can be, but is not limited to, an edge washing device, various personal computers, laptops, smartphones, tablets, IoT devices, and portable wearable devices. IoT devices can be smart speakers, smart TVs, smart air conditioners, smart in-vehicle devices, projection devices, etc. Portable wearable devices can be smartwatches, smart bracelets, head-mounted devices, etc. Head-mounted devices can be virtual reality (VR) devices, augmented reality (AR) devices, smart glasses, etc. It is understood that this method can also be applied to a server, and further to a system including both a terminal and a server, and implemented through interaction between the terminal and the server. Figure 1 As shown, the wafer edge washing method includes the following steps S101-S103:

[0065] Step S101: Clean the first region of the edge of the wafer, the first region including a plurality of sub-regions uniformly arranged along the circumference of the wafer.

[0066] In this embodiment, refer to Figure 2 , Figure 3 The terminal controls the edge cleaning machine 410 to clean the first region 310 of the edge of the wafer 300. The edge cleaning machine applies cleaning fluid to the first region 310 of the wafer 300 through the nozzle and cleans the wafer 300 with preset cleaning parameters (such as power, flow rate, time) to remove copper metal from the first region 310.

[0067] The wafer 300 cleaned by the edge washing machine 410 is a wafer 300 that has undergone a copper electroplating process, and a copper metal layer is deposited on the surface of the wafer 300. The first region 310 of the wafer 300 refers to the annular region at the circumferential edge of the wafer 300, and the width of the first region 310 is defined according to process requirements.

[0068] In this embodiment, refer to Figure 2 The first region 310 of wafer 300 is defined as a plurality of sub-regions 311 uniformly arranged along the circumference of wafer 300. The number of sub-regions 311 is greater than or equal to two. For example, the first region 310 may include two sub-regions 311, three sub-regions 311, five sub-regions 311, eight sub-regions 311, or more sub-regions 311. In this embodiment, the first region 310 includes eight sub-regions 311-1 to 311-8.

[0069] Step S102: Detect the cleaning fluid collected from each sub-region to obtain the current data information of the cleaning fluid in multiple sub-regions. The current data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid.

[0070] In this embodiment, the terminal controls a collection device, such as a collection tank 420, to collect the cleaning fluid used to clean the first area 310. (Refer to...) Figure 3 The collection tank 420 has multiple sub-collection tanks 421, the number of which is the same as the number of sub-regions 311 in the first region 310. Each sub-collection tank 421 is used to collect the cleaning fluid dripping from one sub-region 311. In this embodiment, the sub-collection tanks 421 include eight sub-collection tanks 421-1 to 421-8.

[0071] The terminal monitors the current data of the cleaning fluid collected from each sub-region 311 in real time, obtaining the current data of the cleaning fluid in multiple sub-regions 311. In this embodiment, the current data includes the current volume information of the cleaning fluid in the sub-region 311 and the current concentration information of copper ions in the cleaning fluid.

[0072] It is understandable that if the edge cleaning machine 410 cleans the edges of the wafer 300 uniformly, then the cleaning solution in each sub-region 311 and the concentration of copper ions in the cleaning solution should be the same or similar. In this embodiment, the current data information includes the current volume information of the cleaning solution in the sub-region 311 and the current concentration information of copper ions in the cleaning solution. The current data information is a key indicator for evaluating the edge cleaning effect of the edge cleaning machine 410 on the wafer 300.

[0073] Step S103: Determine the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in multiple sub-regions.

[0074] In this embodiment, the terminal compares the current data information of the cleaning solution in multiple sub-regions 311 and determines whether the edge washing width of the wafer 300 is uniform based on the degree of difference in the current data information of the cleaning solution in the multiple sub-regions 311. If the degree of difference in the current data information of the cleaning solution in the multiple sub-regions 311 meets the edge washing uniformity requirement of the wafer 300, the terminal determines that the edge washing width of the wafer 300 is uniform, and the terminal controls the edge washing machine to continue cleaning the first region 310 according to the current cleaning parameters until all the copper metal in the first region 310 is removed. (Refer to...) Figure 4 As shown, if the difference in the current data information of the cleaning solution of at least two sub-regions 311 does not meet the edge washing uniformity requirements of the wafer 300, the terminal determines that the edge washing width of the wafer 300 is not uniform and the edge washing width of each sub-region 311 is different. The terminal adjusts the cleaning parameters of the edge washing machine 410 to optimize the edge washing quality and the consistency of the edge washing width.

[0075] The aforementioned wafer edge cleaning method cleans the first region of the wafer edge, detects the cleaning solution collected from each sub-region, and obtains current data information of the cleaning solution in multiple sub-regions. This current data includes the current volume of the cleaning solution in each sub-region and the current concentration of copper ions in the cleaning solution. Based on this current data, the edge cleaning uniformity of the wafer is determined. By utilizing the current data of the cleaning solution in each sub-region during the wafer edge cleaning process, the edge cleaning uniformity of each sub-region is detected in real time. The edge cleaning effect of each sub-region is quantified using the current data of the cleaning solution in multiple sub-regions. This eliminates the need for optical detection methods, and the detection process is not affected by wafer surface quality and smoothness, reducing detection difficulty and improving detection reliability. Furthermore, by periodically collecting and analyzing the current data of the cleaning solution in each sub-region, the aforementioned wafer edge cleaning method can monitor the changing trend of the cleaning effect in real time, which is beneficial for timely detection of potential quality problems and for taking effective preventive measures.

[0076] In some embodiments, step S103 determines the detection result of the wafer edge washing uniformity based on the current data information of the cleaning solution in multiple sub-regions, including steps S1031-S1032:

[0077] Step S1031: Obtain the current volume deviation of the cleaning solution in multiple sub-regions, and the current concentration deviation of copper ions in the cleaning solution in multiple sub-regions;

[0078] In this embodiment, the terminal compares the current volume information of the cleaning fluid in each sub-region 311, calculates the current volume deviation of the cleaning fluid in each sub-region 311, and obtains the current volume deviation of the cleaning fluid in multiple sub-regions 311. The current volume deviation of the cleaning fluid in multiple sub-regions 311 includes the current volume deviation of the cleaning fluid in any two sub-regions 311.

[0079] The terminal compares the current concentration information of copper ions in the cleaning solution of each sub-region 311, calculates the current concentration deviation of copper ions in the cleaning solution of each sub-region 311, and obtains the current concentration deviation of copper ions in the cleaning solution of multiple sub-regions 311. The current concentration deviation of copper ions in the cleaning solution of multiple sub-regions 311 includes the current concentration deviation of copper ions in the cleaning solution of any two sub-regions 311.

[0080] Step S1032: If the current volume deviation of the cleaning solution in at least two sub-regions exceeds the first preset deviation range, or if the current concentration deviation of copper ions in the cleaning solution in at least two sub-regions exceeds the second preset deviation range, then the test result of the wafer edge washing uniformity is unqualified.

[0081] In this embodiment, the terminal compares the current volume deviation of the cleaning fluid in multiple sub-regions 311 with a first preset deviation range. If the current volume deviation of the cleaning fluid in at least two sub-regions 311 exceeds the first preset deviation range, the terminal determines that the detection result of the edge washing uniformity of the wafer 300 is unqualified. That is, the terminal determines that the width of each sub-region 311 of the first region 310 cleaned by the edge washing machine is not uniform.

[0082] The terminal compares the current concentration deviation of copper ions in the cleaning solution of multiple sub-regions 311 with the second preset deviation range. If the current concentration deviation of copper ions in the cleaning solution of at least two sub-regions 311 exceeds the second preset deviation range, the terminal determines that the detection result of the edge washing uniformity of the wafer 300 is unqualified. That is, the terminal determines that the width of each sub-region 311 of the first region 310 cleaned by the edge washing machine 410 is not uniform.

[0083] In this embodiment, the current volume deviation of the cleaning solution in multiple sub-regions 311 is within the first preset deviation range, and the current concentration deviation of the cleaning solution in multiple sub-regions 311 is within the second preset deviation range. Then, the terminal judges that the detection result of the edge washing uniformity of the wafer 300 is qualified. That is, the terminal judges that the width of each sub-region 311 of the first region 310 cleaned by the edge washing machine 410 is uniform, and the terminal controls the edge washing machine 410 to continue cleaning the first region 310 according to the current cleaning parameters.

[0084] In this embodiment, the terminal can use algorithm models (such as machine learning, deep learning, etc.) to analyze historical edge washing data of the edge washing process, such as the historical volume deviation of the cleaning liquid in each sub-region 311, the historical concentration deviation of copper ions in the cleaning liquid in each sub-region 311, and the historical edge washing detection results. The first deviation range and the second deviation range are set according to the output results of the algorithm model.

[0085] Based on the above scheme, the terminal determines whether the edge washing uniformity of the wafer is qualified based on the current volume deviation of the cleaning fluid and the current concentration deviation of copper ions in each sub-region. This not only improves the accuracy and reliability of the detection, but also provides data support for the performance optimization and fault prediction of the edge washing machine, so as to promptly detect and correct problems in the cleaning process and ensure the cleanliness and consistency of the wafer edges.

[0086] In some embodiments, after step S103 determines the detection result of the wafer edge washing uniformity based on the current data information of the cleaning fluid in multiple sub-regions, if the detection result of the wafer edge washing uniformity is unqualified, the terminal further executes step S104:

[0087] Step S104: If the test result of the edge washing uniformity of the wafer is unqualified, adjust the cleaning parameters of the wafer cleaning according to the test result.

[0088] In this embodiment, when the terminal determines that the detection result of the edge washing uniformity of the wafer 300 is unqualified, the terminal adjusts the cleaning parameters of the edge washing machine 410 for cleaning the wafer based on the current volume deviation of the cleaning solution in multiple sub-regions 311, the first preset deviation range, the current concentration deviation of copper ions in the cleaning solution in multiple sub-regions 311, and the second preset deviation range.

[0089] In this embodiment, the terminal can use algorithm models (such as machine learning, deep learning, etc.) to analyze the unevenness of the edge washing in each sub-region 311, obtain the adjusted cleaning parameters of the edge washing machine 410 for cleaning the wafer, and adjust the edge washing machine 410 according to the adjusted cleaning parameters so that the edge washing machine 410 cleans the first region 310 according to the adjusted cleaning parameters (such as power, flow rate, time).

[0090] In this embodiment, when the detection result of the wafer edge washing uniformity is unqualified, the terminal can improve the uniformity of the wafer edge washing width by adjusting the cleaning parameters of the edge washing machine, thereby improving the quality of the wafer and the reliability of subsequent processing. At the same time, the terminal can accumulate and record edge washing data and optimize cleaning parameters, which can further improve the efficiency and effect of wafer cleaning.

[0091] In some embodiments, the wafer edge washing method of this embodiment further performs steps S105-S106 after edge washing is completed:

[0092] Step S105: Obtain the total amount of copper in the cleaning solution of multiple sub-regions.

[0093] In this embodiment, after the terminal controls the edge washing machine 410 to complete the edge washing of the first region 310 of the wafer 300, the terminal obtains the total amount of copper in the cleaning solution collected in each sub-region 311, wherein the total amount of copper in the cleaning solution is the total mass of metallic copper collected in each sub-region 311.

[0094] In this embodiment, the terminal can obtain the volume of the cleaning fluid in each sub-region 311 and the copper ion concentration of the cleaning fluid in each sub-region 311. Based on the volume of the cleaning fluid in each sub-region 311 and the copper ion concentration of the cleaning fluid in each sub-region 311, the terminal can calculate the mass of copper in the cleaning fluid of each sub-region 311. The total amount of copper in the cleaning fluid of multiple sub-regions 311 can be obtained by summing the mass of copper in the cleaning fluid of each sub-region 311.

[0095] Step S106: Detect the edge washing width of the wafer based on the total amount of copper.

[0096] In this embodiment, the terminal calculates the edge width of the wafer 300 based on the total amount of copper in the cleaning solution of multiple sub-regions 311.

[0097] It is understandable that the total amount of copper in the cleaning solution can reflect the area of ​​metallic copper cleaned from wafer 300 during the edge cleaning process. Since the edge cleaning width is proportional to the area of ​​metallic copper cleaned (under the same cleaning conditions), the edge cleaning width can be estimated by detecting the total amount of copper in the cleaning solution.

[0098] In this embodiment, the terminal can obtain the edge washing width based on the correspondence between the total amount of copper in the cleaning solution and the edge washing width. This correspondence can be stored in an external database, allowing the terminal to directly retrieve the information from the database and calculate the edge washing width accordingly. Alternatively, the terminal can calculate the edge washing width using a mathematical model.

[0099] In this embodiment, the terminal can effectively detect the wafer edge washing width, thereby improving the reliability of wafer edge washing detection.

[0100] In some embodiments, step S106 determines the detection result of the wafer edge washing completion degree based on the total amount of copper information, including steps S1061-S1062:

[0101] Step S1061: Obtain the total amount of copper in the first region.

[0102] In this embodiment, the terminal acquires the thickness information of the copper metal layer in the first region 310. For example, the terminal can obtain the thickness information of the copper metal layer in the first region 310 through physical measurement or optical measurement. The terminal also acquires the area information of the first region 310. For example, the terminal can obtain the area information of the first region 310 through image processing or laser scanning. Based on the thickness information of the copper metal layer in the first region 310 and the area information of the first region 310, the terminal calculates the total amount of copper in the first region 310. The total amount of copper in the first region 310 refers to the total mass of metallic copper in the area to be cleaned during the edge-washing process.

[0103] Step S1062: Compare the total amount of copper in the cleaning solution of multiple sub-regions with the total amount of copper in the first region. If the comparison result exceeds the third preset deviation range, the detection result of the wafer edge washing width is unqualified.

[0104] Reference Figures 5-7 As shown in the figure, the shaded area is the area without edge washing, the white area is the area after edge washing to remove the copper metal layer, and the area between the dashed line and the outer boundary of wafer 300 is the preset edge washing area.

[0105] In this embodiment, as Figure 5 As shown, the terminal compares the total amount of copper in the cleaning solution of multiple sub-regions 311 with the total amount of copper in the first region 310, and determines whether the comparison result exceeds the third preset deviation range. If the deviation between the total amount of copper in the cleaning solution of multiple sub-regions 311 and the total amount of copper in the first region 310 is within the third preset deviation range, then the detection result of the edge washing width of the wafer 300 is qualified.

[0106] The total amount of copper in the cleaning solution of multiple sub-regions 311 differs from the total amount of copper in the first region 310 by a third preset deviation range. For example, ... Figure 7 As shown, if the total amount of copper in the cleaning solution of multiple sub-regions 311 is greater than the total amount of copper in the first region 310 and exceeds the third preset deviation range, the terminal determines that the edge washing width is too wide, and the detection result of the edge washing width of wafer 300 is unqualified; for example Figure 6As shown, if the total amount of copper in the cleaning solution of multiple sub-regions 311 is smaller than the total amount of copper in the first region 310 and exceeds the third preset deviation range, the terminal will determine that the edge washing width is too small, and the detection result of the edge washing width of wafer 300 will be unqualified.

[0107] In this embodiment, the terminal obtains the detection result of the edge washing width of the wafer 300 based on the total amount of copper in the cleaning solution of multiple sub-regions 311 and the total amount of copper in the first region 310. The detection process is simpler and more intuitive, and can effectively detect the edge washing width of the wafer 300, thus improving the detection reliability of the edge washing of the wafer 300.

[0108] In some embodiments, when the detection result of the edge washing width of the wafer 300 is unqualified, the terminal adjusts the starting position of the edge washing machine 410 to clean the wafer 300 according to the detection result of the edge washing width. For example, if the edge washing width is detected to be too large, the terminal can adjust the starting position of the nozzle of the edge washing machine 410 to make it further away from the center of the wafer 300; if the edge washing width is detected to be too small, the starting position of the nozzle of the edge washing machine 410 is adjusted to make it closer to the center of the wafer 300.

[0109] In addition, the terminal can also adjust other edge cleaning parameters, such as the cleaning power of the edge cleaning machine 410, the flow rate of the cleaning fluid, the spray angle of the nozzle, and the rotation speed of the wafer, to further optimize the edge cleaning effect.

[0110] During the next edge washing operation on wafer 300, after adjusting the parameters, the terminal control edge washing machine 410 performs the edge washing process on the next wafer 300 according to the adjusted edge washing parameters, so as to continuously improve and optimize the quality and efficiency of edge washing of wafer 300.

[0111] According to an exemplary embodiment, the wafer edge washing method of this embodiment is as follows: Figure 8 As shown, steps S201-S207 are included:

[0112] Step S201: Clean the first region of the edge of the wafer, the first region including a plurality of sub-regions uniformly arranged along the circumference of the wafer.

[0113] Step S202: Detect the cleaning fluid collected from each sub-region to obtain the current data information of the cleaning fluid in multiple sub-regions. The current data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid.

[0114] Step S203: Determine the wafer edge washing uniformity based on the current data information of the cleaning solution in multiple sub-regions. In this embodiment, the terminal acquires the current volume deviation of the cleaning solution in multiple sub-regions and the current concentration deviation of copper ions in the cleaning solution in multiple sub-regions; if the current volume deviation of the cleaning solution in at least two sub-regions exceeds a first preset deviation range, or if the current concentration deviation of copper ions in the cleaning solution in at least two sub-regions exceeds a second preset deviation range, then the terminal determines that the detection result of the wafer edge washing uniformity is unqualified.

[0115] Step S204: If the test result of the edge washing uniformity of the wafer is unqualified, adjust the cleaning parameters of the wafer cleaning according to the test result.

[0116] Step S205: Obtain information on the total amount of copper in the cleaning solution of multiple sub-regions.

[0117] Step S206: Detect the wafer's edge washing width based on the total copper content information. In this embodiment, the terminal obtains the total copper content information of the first region. The terminal compares the total copper content information in the cleaning solution of multiple sub-regions with the total copper content information of the first region. If the comparison result exceeds a third preset deviation range, the terminal determines that the wafer's edge washing width detection result is unqualified.

[0118] Step S207: If the detection result of the edge washing width of the wafer is unqualified, adjust the initial position of cleaning the wafer according to the detection result of the edge washing width.

[0119] The wafer edge washing method disclosed herein collects the cleaning solution dripping during the edge washing process and detects the removal of copper metal in the first region of the wafer edge during the edge washing process by measuring the volume of the collected cleaning solution and the concentration of copper ions. This enables real-time monitoring of the edge washing width. The monitoring process has the advantages of being non-destructive and highly real-time, and can promptly detect and correct defects such as uneven edge washing width during the production process.

[0120] Meanwhile, by monitoring the copper ion concentration and cleaning solution volume during the wafer edge washing process in real time, this disclosure can obtain more detailed and accurate data related to the edge washing process. This data can not only evaluate the edge washing efficiency (the amount of copper metal removed per unit time), but also detect abnormal fluctuations in the edge washing process in a timely manner, such as sudden increases or decreases in concentration or abnormal changes in volume, thereby effectively avoiding the problem of large-scale product scrapping due to process abnormalities.

[0121] The wafer edge washing method disclosed herein can also construct an Advanced Process Control (APC) model based on the copper ion concentration information and solution volume information of each wafer after edge washing. The APC model is used to analyze the trends and correlations of edge washing data, identify key factors affecting the edge washing effect, and automatically adjust edge washing process parameters such as nozzle position and wafer rotation speed accordingly. Through the APC model, the edge washing process can be finely controlled, improving equipment production efficiency, optimizing process stability, and ultimately improving product quality.

[0122] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0123] According to an exemplary embodiment, this disclosure provides a wafer edge washing apparatus for implementing the wafer edge washing method described above, such as... Figure 9 As shown, the wafer edge washing equipment includes an edge washing machine 410, a collection tank 420, multiple data acquisition mechanisms 430, and a controller 440.

[0124] like Figure 9 As shown, the edge cleaning machine 410 is used to clean a first region 310 of the edge of a wafer 300. The first region 310 includes a plurality of sub-regions 311 uniformly arranged along the circumference of the wafer 300. The wafer cleaned by the edge cleaning machine 410 is a wafer 300 that has undergone a copper plating process, and a copper metal layer is deposited on the surface of the wafer 300. The first region 310 of the wafer 300 refers to the annular region of the circumferential edge of the wafer 300, and the width of the first region 310 is defined according to process requirements. In this embodiment, the first region 310 of the wafer 300 is defined as a plurality of sub-regions 311 uniformly arranged along the circumference of the wafer, and the number of sub-regions 311 is greater than or equal to two. The edge cleaning machine 410 can spray cleaning fluid onto the first region 310 of the wafer 300 through nozzles to clean and remove the copper metal from the first region 310.

[0125] The collection tank 420 includes multiple sub-collection tanks 421 distributed circumferentially along the wafer 300. During the edge washing process of the wafer 300, the multiple sub-collection tanks 421 collect the cleaning fluid dripping from multiple sub-regions 311. When the edge washing machine 410 cleans the wafer, the collection tank 420 is located on the periphery of the wafer 300, and the multiple sub-collection tanks 421 of the collection tank 420 are all close to the peripheral edge of the wafer 300. Each sub-collection tank 421 is used to collect the cleaning fluid dripping from each sub-region 311. The cleaning fluid contains dissolved copper ions.

[0126] Multiple data acquisition units 430 are respectively installed in multiple sub-collection tanks 421 to detect the current data information of the cleaning fluid collected in the sub-collection tanks 421. The data information includes the current volume information of the cleaning fluid in the sub-region 311 and the current concentration information of copper ions in the cleaning fluid.

[0127] The controller 440 is communicatively connected to multiple data acquisition units 430. The controller 440 is used to receive the current data information of the cleaning fluid in the sub-region 311 detected by the multiple data acquisition units 430, and to determine the edge washing uniformity of the wafer 300 based on the current data information of the cleaning fluid in the multiple sub-regions 311.

[0128] The wafer edge washing equipment of this embodiment collects the cleaning fluid dripping from multiple sub-regions 311 during the edge washing process of the wafer 300 through multiple sub-collection tanks 421 of the collection tank 420. The current data information of the cleaning fluid collected by the data acquisition mechanism 430 is detected. The controller 440 obtains the edge washing effect of each sub-region 311 through the current data information of the cleaning fluid in the multiple sub-regions 311. There is no need to use optical methods for detection. The detection process is not affected by the surface quality and smoothness of the wafer 300, which reduces the detection difficulty and improves the detection reliability.

[0129] In some embodiments, such as Figure 9 As shown, the data acquisition mechanism 430 includes a liquid level sensor 431 and a copper ion detection sensor 432; wherein, the liquid level sensor 431 is disposed in the sub-collection tank 421, and the liquid level sensor 431 is used to detect the current volume information of the cleaning fluid collected in the sub-collection tank 421; the copper ion detection sensor 432 is disposed in the sub-collection tank 421, and the copper ion detection sensor is used to detect the current copper ion concentration information of the cleaning fluid in the sub-collection tank 421.

[0130] In some embodiments, such as Figure 9 As shown, the wafer edge washing equipment also includes:

[0131] The first drive mechanism 450 is used to drive the wafer 300 to rotate so that the edge washing machine 410 cleans the first area 310.

[0132] The second drive mechanism 460 is driven to rotate the collection tank 420, so that the positions of the collection tank 420 and the wafer 300 are relatively fixed during the cleaning process of the edge washing machine 410 cleaning the wafer 300. The controller 440 is controlled to the first drive mechanism 450 and the second drive mechanism 460 respectively, and the controller 440 associates the first drive mechanism 450 and the second drive mechanism 460 so that the second drive mechanism 460 drives the collection tank 420 and the wafer 300 to rotate at the same speed.

[0133] This ensures that the position of the collection tank 420 and the wafer 300 is relatively fixed during the edge cleaning process of the wafer 300, so that the cleaning solution dripping from the wafer 300 can fall into the collection tank 420 and avoid the cleaning solution dripping outside the collection tank 420 and affecting the test results.

[0134] In this embodiment, as Figure 9 As shown, the wafer edge washing equipment also includes:

[0135] A wafer carrier mechanism 470 is used to carry a wafer 300. A first driving mechanism 450 is driven to connect with the wafer carrier mechanism 470. During the edge cleaning process of the wafer 300, the first driving mechanism 450 drives the wafer carrier mechanism 470 to rotate, thereby causing the wafer 300 to rotate, so that the edge cleaning machine 410 can uniformly clean the first region 310 of the edge of the wafer 300 and remove the copper metal from the first region 310.

[0136] In some embodiments, the second drive mechanism 460 can also drive the collection groove 420 to move up and down relative to the wafer carrier mechanism 470.

[0137] For example, after the wafer 300 is transferred and placed in the wafer carrier 470, the controller 440 controls the second drive mechanism 460 to drive the collection slot 420 to rise. The collection slot 420 rises to the same height as the wafer 300 and surrounds and abuts the outer peripheral edge of the wafer 300. Then, the controller 440 controls the edge cleaning machine 410 to spray cleaning fluid onto the first region 310 of the wafer 300 to perform an edge cleaning operation on the wafer 300, cleaning and removing copper from the first region 310. Simultaneously, the controller 440 controls the first drive mechanism 450 to drive the wafer carrying mechanism 470 to rotate, causing the wafer 300 to rotate, so that the edge cleaning machine 410 can evenly clean the first region 310 at the edge of the wafer 300. The controller 440 controls the second drive mechanism 460 to drive the collection tank 420 to rotate. The collection tank 420 rotates at the same speed as the wafer 300, keeping the collection tank 420 and the wafer 300 relatively stationary. Each sub-collection tank 421 of the collection tank 420 collects the cleaning fluid dripping from each sub-region 311. After the wafer edge cleaning is completed, the controller 440 controls the second drive mechanism 460 to drive the collection tank 420 to descend, transferring the edge-cleaned wafer 300, and discharging the cleaning fluid in the collection tank 420 to the outside of the equipment.

[0138] In some embodiments, such as Figure 9 As shown, the collection tank 420 has a retractable baffle, which can extend when collecting cleaning fluid and retract when collecting cleaning fluid.

[0139] In some embodiments, such as Figure 9 As shown, the controller 440 is connected to the edge washing machine 410. When the controller 440 determines that the edge washing uniformity test result of the wafer 300 is unqualified, the controller 440 adjusts the cleaning parameters of the edge washing machine 410 for cleaning the wafer based on the current volume deviation of the cleaning solution in multiple sub-regions 311, a first preset deviation range, the current concentration deviation of copper ions in the cleaning solution in multiple sub-regions 311, and a second preset deviation range. The controller 440 adjusts the edge washing machine 410 according to the adjusted cleaning parameters so that the edge washing machine 410 cleans the first region 310 according to the adjusted cleaning parameters (such as power, flow rate, and time).

[0140] Based on the same inventive concept, this disclosure also provides a wafer edge washing apparatus for implementing the wafer edge washing method described above. The solution provided by this apparatus is similar to the solution described in the above method; therefore, the specific limitations in one or more wafer edge washing apparatus embodiments provided below can be found in the limitations of the wafer edge washing method described above, and will not be repeated here.

[0141] According to an exemplary embodiment, this disclosure provides a wafer edge washing apparatus, such as... Figure 10As shown, the wafer edge washing apparatus includes:

[0142] The drive module 501 is used to drive the edge cleaning machine to clean a first region of the edge of the wafer. The first region includes a plurality of sub-regions evenly arranged along the circumference of the wafer.

[0143] The detection module 502 is used to detect the cleaning fluid collected from each sub-region and obtain the current data information of the cleaning fluid in multiple sub-regions. The current data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid.

[0144] The determination module 503 is used to determine the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in multiple sub-regions.

[0145] In some embodiments, the determining module 503 includes:

[0146] The first acquisition unit is used to acquire the current volume deviation of the cleaning fluid in multiple sub-regions and the current concentration deviation of copper ions in the cleaning fluid in multiple sub-regions.

[0147] The first comparison unit is used to determine that the detection result of the wafer edge washing uniformity is unqualified if the current volume deviation of the cleaning solution in at least two sub-regions exceeds a first preset deviation range, or if the current concentration deviation of copper ions in the cleaning solution in at least two sub-regions exceeds a second preset deviation range.

[0148] In some embodiments, the wafer edge washing apparatus further includes:

[0149] The control module is used to adjust the cleaning parameters of the edge washing machine when the test result of the edge washing uniformity of the wafer is unqualified.

[0150] In some embodiments, the detection module 502 is further configured to obtain information on the total amount of copper in the cleaning fluid of multiple sub-regions;

[0151] The determination module 503 is also used to detect the edge washing width of the wafer based on the total amount of copper information.

[0152] In some embodiments, the determining module 503 further includes:

[0153] The second acquisition unit is used to acquire information on the total amount of copper in the first region;

[0154] The second comparison module is used to compare the total amount of copper in the cleaning solution of multiple sub-regions with the total amount of copper in the first region. If the comparison result exceeds the third preset deviation range, the detection result of the wafer edge width is unqualified.

[0155] According to an exemplary embodiment, this disclosure provides an electronic device, including a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the steps of the wafer edge washing method in the above-described method embodiments.

[0156] In one exemplary embodiment, an electronic device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 11 As shown, the electronic device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When the computer program is executed by the processor, it implements a wafer washing method.

[0157] Those skilled in the art will understand that Figure 11 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the electronic device to which the present application is applied. The specific electronic device may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0158] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.

[0159] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.

[0160] It should be noted that the edge-washing information and data involved in this application (including but not limited to data used for analysis, data stored, data displayed, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data must comply with relevant regulations.

[0161] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0162] An unexpected benefit of this disclosure is that by cleaning the first region of the wafer edge using an edge-washing machine, the cleaning solution collected from each sub-region is detected, obtaining current data information of the cleaning solution in multiple sub-regions. This current data includes the current volume of the cleaning solution in each sub-region and the current concentration of copper ions in the cleaning solution. Based on this current data information, the edge-washing uniformity of the wafer is determined. By utilizing the current data information of the cleaning solution in each sub-region during the wafer edge-washing process, the edge-washing uniformity of each sub-region can be detected in real time. The edge-washing effect of each sub-region is quantified using the current data information of the cleaning solution in multiple sub-regions. This eliminates the need for optical detection methods, and the detection process is not affected by wafer surface quality and smoothness, reducing detection difficulty and improving detection reliability. Furthermore, by periodically collecting and analyzing the current data information of the cleaning solution in each sub-region, the above wafer edge-washing method can monitor the changing trend of the cleaning effect in real time, which is beneficial for timely detection of potential quality problems and for taking effective preventive measures.

[0163] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0164] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A wafer edge washing method, characterized in that, The edge washing method includes: A first region is cleaned at the edge of the wafer, the first region comprising a plurality of sub-regions uniformly arranged along the circumference of the wafer; The cleaning fluid collected from each of the sub-regions is detected to obtain current data information of the cleaning fluid in multiple sub-regions. The current data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid. The edge washing uniformity of the wafer is determined based on the current data information of the cleaning fluid in the multiple sub-regions.

2. The wafer edge washing method according to claim 1, characterized in that, The step of determining the detection result of the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in the plurality of sub-regions includes: Obtain the current volume deviation of the cleaning fluid in the multiple sub-regions, and the current concentration deviation of copper ions in the cleaning fluid in the multiple sub-regions; If the current volume deviation of the cleaning solution in at least two of the sub-regions exceeds the first preset deviation range, or if the current concentration deviation of copper ions in the cleaning solution in at least two of the sub-regions exceeds the second preset deviation range, then the test result of the edge washing uniformity of the wafer is unqualified.

3. The wafer edge washing method according to claim 2, characterized in that, Also includes: When the test result of the edge washing uniformity of the wafer is unqualified, the cleaning parameters of the wafer are adjusted according to the test result.

4. The wafer edge washing method according to claim 1, characterized in that, Also includes: Obtain information on the total amount of copper in the cleaning solution of multiple sub-regions; The edge-washing width of the wafer is detected based on the total amount of copper.

5. The wafer edge washing method according to claim 4, characterized in that, The step of determining the detection result of the wafer edge washing completion degree based on the total amount of copper includes: Obtain the total amount of copper in the first region; If the total amount of copper in the cleaning solution of multiple sub-regions is compared with the total amount of copper in the first region, and the comparison result exceeds a third preset deviation range, then the detection result of the edge washing width of the wafer is unqualified.

6. A wafer edge washing device, characterized in that, include: An edge cleaning machine is used to clean a first region of the edge of a wafer, the first region comprising a plurality of sub-regions uniformly arranged along the circumference of the wafer. The collection tank includes multiple sub-collection tanks distributed along the circumference of the wafer. During the edge washing process, the multiple sub-collection tanks collect the cleaning liquid dripping from the multiple sub-regions. Multiple data acquisition mechanisms are respectively located in multiple sub-collection tanks, and are used to detect the current data information of the cleaning fluid collected in the sub-collection tanks. The data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid. A controller is communicatively connected to multiple data acquisition mechanisms. The controller is used to receive the current data information of the cleaning fluid in the sub-region detected by the multiple data acquisition mechanisms, and to determine the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in the multiple sub-regions.

7. The wafer edge washing equipment according to claim 6, characterized in that, The data acquisition mechanism includes: A liquid level sensor is installed in the sub-collection tank, and the liquid level sensor is used to detect the current volume information of the cleaning liquid collected in the sub-collection tank; A copper ion detection sensor is installed in the sub-collection tank, and the copper ion detection sensor is used to detect the current copper ion concentration information of the cleaning solution in the sub-collection tank.

8. The wafer edge washing equipment according to claim 6, characterized in that, The wafer edge washing equipment also includes: A first driving mechanism is used to drive the wafer to rotate so that the edge washing machine cleans the first area; The second driving mechanism is connected to the collection tank and drives the collection tank to rotate so that the position of the collection tank and the wafer is relatively fixed during the process of the edge washing machine cleaning the wafer. The controller is connected to the first drive mechanism and the second drive mechanism respectively. The controller associates the first drive mechanism and the second drive mechanism so that the second drive mechanism drives the collection tank and the wafer to rotate at the same speed.

9. A wafer edge washing apparatus, characterized in that, include: A drive module is used to drive an edge cleaning machine to clean a first region of the edge of a wafer, the first region comprising a plurality of sub-regions uniformly arranged along the circumference of the wafer. The detection module is used to detect the cleaning fluid collected from each of the sub-regions and obtain the current data information of the cleaning fluid in the multiple sub-regions. The current data information includes the current volume information of the cleaning fluid in the sub-region and the current concentration information of copper ions in the cleaning fluid. The determination module is used to determine the edge washing uniformity of the wafer based on the current data information of the cleaning fluid in the multiple sub-regions.

10. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the wafer edge washing method according to any one of claims 1 to 5.

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