Method for replacing conventional CVL + SM with PIC for wireless charging project manufacturing
Patent Information
- Application Number
- CN202510808412.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-17
- Publication Date
- 2025-09-16
AI Technical Summary
[0003]然而,这种工艺存在诸多问题,例如油墨经过两次热烘烤后耐化金效果差,容易脆化脱落,且在不做油墨的情况下容易出现CVL下藏药水的问题
[0021] 1. By adopting the PIC material process, the use of ink is directly avoided, eliminating the problem of ink becoming brittle and falling off after multiple heat baking in traditional processes, which leads to a decrease in product surface quality;
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Figure CN120659245A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of wireless charging projects, and in particular to a method for replacing conventional CVL+SM with PIC in manufacturing wireless charging projects. Background Art
[0002] With the increasing popularity and miniaturization of electronic devices, wireless charging technology has attracted widespread attention due to its convenience and aesthetics. Traditional wireless charging product manufacturing typically utilizes a CVL+SM process, with SM being the first step followed by CVL. This process includes pretreatment, ink printing, pre-baking, exposure, development, baking, pretreatment, cover film application, lamination, and baking.
[0003] However, this process presents numerous challenges. For example, the ink's resistance to metal oxides is poor after two thermal bakes, leading to brittleness and shedding. Furthermore, without the ink, the CVL coating can easily harbor chemicals. These issues severely impact the quality and stability of wireless charging products, increasing production costs. Summary of the Invention
[0004] The purpose of the present invention is to provide a method for replacing conventional CVL+SM with PIC in the manufacturing of wireless charging projects. PIC is used to directly perform vacuum lamination, pre-baking, exposure, development and curing, replacing the traditional CVL+SM process. Through this new process, the problems of ink embrittlement and shedding and the hidden solution under CVL in the traditional process can be effectively avoided, significantly improving the quality, stability and reliability of wireless charging products while reducing production costs.
[0005] In order to achieve the above object, the present invention provides the following technical solution: a method for replacing conventional CVL+SM with PIC in wireless charging project manufacturing, comprising the following steps:
[0006] S1: Pre-treatment, cleaning the copper surface of the substrate where the circuit patterning has been completed;
[0007] S2: PIC vacuum lamination, using vacuum lamination process to attach the photosensitive PIC material to the surface of the copper substrate;
[0008] S3: Pre-bake, pre-bake the substrate covered with PIC material;
[0009] S4: exposure processing, the PIC layer is patterned by an exposure machine to form a predetermined pattern;
[0010] S5: Development process to remove the unexposed part of the PIC and form a window;
[0011] S6: High temperature curing to solidify the PIC and form a soft and bend-resistant insulating protective layer.
[0012] Furthermore, in S1, a sandblasting + micro-etching cleaning technology is used to remove the oxide layer and contaminants on the copper surface of the substrate.
[0013] Furthermore, in S2, the PIC material is uniformly attached to the copper surface by vacuum lamination to form a uniform and dense covering layer.
[0014] Furthermore, in said S2, the pressure range of the vacuum lamination is 0.5-1.2 MPa, the temperature is 60-90°C, and the lamination time is 30-120 seconds.
[0015] Furthermore, in S3, the pre-baking temperature is 80-100°C for 5-10 minutes, which is used to remove residual solvent inside the PIC and improve exposure accuracy.
[0016] Furthermore, in S4, the exposure process is performed in an ultraviolet light exposure machine.
[0017] Furthermore, in said S5, the development adopts a weak alkaline water-based developer with a pH of 9.5-10.5.
[0018] Furthermore, in S5 , after the development is completed, the copper surface is immediately cleaned with deionized water or purified water to remove the residual developer and dissolved PIC material on the surface.
[0019] Furthermore, in S6, the high temperature curing temperature is 150-180°C and the time is 30-60 minutes, so that the PIC is cross-linked to form a protective layer with both mechanical strength and flexibility, providing good insulation performance and physical protection, and can effectively protect the copper circuit from the influence of the external environment.
[0020] In the above technical solution, the technical effects and advantages provided by the present invention are:
[0021] 1. By adopting the PIC material process, the use of ink is directly avoided, eliminating the problem of ink becoming brittle and falling off after multiple heat baking in traditional processes, which leads to a decrease in product surface quality;
[0022] 2. PIC directly forms a covering layer through vacuum lamination and exposure and development, avoiding the risk of chemical residue;
[0023] 3. After curing, the PIC material forms a soft and bend-resistant covering layer, allowing wireless charging products to withstand more physical deformation during use without damaging the covering layer or internal circuits, thereby improving product durability;
[0024] 4. Compared with the multiple steps of traditional processes, this process only includes pre-treatment, vacuum lamination, pre-bake, exposure, development and baking curing, which greatly reduces the production steps, improves production efficiency, reduces material waste and reduces production costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments described in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.
[0026] Figure 1 Schematic diagram of the production method of the present invention. DETAILED DESCRIPTION
[0027] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.
[0028] The present invention provides Figure 1 The method for manufacturing a wireless charging project using PIC to replace conventional CVL+SM includes the following steps:
[0029] S1: Pre-treatment, cleaning the copper surface of the substrate where the circuit patterning has been completed. The cleaning adopts the sandblasting + micro-etching technology to remove the oxide layer and contaminants on the copper surface of the substrate;
[0030] S2: PIC vacuum lamination, using vacuum lamination process to evenly adhere the photosensitive PIC material to the copper surface to form a uniform and dense covering layer. The pressure range of vacuum lamination is 0.5-1.2MPa, the temperature is 60-90℃, and the lamination time is 30-120 seconds;
[0031] S3: Pre-bake the substrate covered with PIC material at a temperature of 80-100°C for 5-10 minutes to remove residual solvent inside the PIC and improve exposure accuracy.
[0032] S4: exposure processing, the PIC layer is patterned by a UV exposure machine to form a predetermined pattern;
[0033] S5: Development treatment, using a weak alkaline water-based developer with a pH of 9.5-10.5 to remove the unexposed PIC and form a window. After development, the copper surface is immediately cleaned with deionized water or purified water to remove the residual developer and dissolved PIC material on the surface.
[0034] S6: High-temperature curing, at a temperature of 150-180°C for 30-60 minutes, allows the PIC to cross-link to form a protective layer with both mechanical strength and flexibility, providing good insulation performance and physical protection, and can effectively protect copper lines from the influence of the external environment.
[0035] Through the above steps, the present invention successfully solves the problems of ink embrittlement and shedding, and the hiding of chemicals under CVL in the traditional CVL+SM process, significantly improving the quality, stability and reliability of the wireless charging module. At the same time, it simplifies the process flow, reduces material usage and production steps, reduces production costs, improves production efficiency, and meets the needs of modern electronic devices for high-performance wireless charging modules.
[0036] The above description is merely illustrative of certain exemplary embodiments of the present invention. It goes without saying that those skilled in the art will be able to modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and description are illustrative in nature and should not be construed as limiting the scope of protection of the claims.
Claims
1. A method for manufacturing wireless charging projects using PIC to replace conventional CVL+SM, characterized in that: The following steps are involved: S1: Pre-treatment, cleaning the copper surface of the substrate where the circuit patterning has been completed; S2: PIC vacuum lamination, using vacuum lamination process to attach the photosensitive PIC material to the surface of the copper substrate; S3: Pre-bake, pre-bake the substrate covered with PIC material; S4: exposure processing, the PIC layer is patterned by an exposure machine to form a predetermined pattern; S5: Development process to remove the unexposed part of the PIC and form a window; S6: High temperature curing to solidify the PIC and form a soft and bend-resistant insulating protective layer.
2. The method for replacing conventional CVL+SM with PIC in manufacturing a wireless charging project according to claim 1, characterized in that: In the above-mentioned S1, a sandblasting + micro-etching cleaning technology is used to remove the oxide layer and contaminants on the copper surface of the substrate.
3. The method for replacing conventional CVL+SM with PIC in manufacturing a wireless charging project according to claim 1, characterized in that: In the above-mentioned S2, the PIC material is evenly attached to the copper surface by vacuum lamination to form a uniform and dense covering layer.
4. The method for manufacturing a wireless charging project by using PIC to replace conventional CVL+SM according to claim 1, characterized in that: In the step S2 , the pressure range of the vacuum lamination is 0.5-1.2 MPa, the temperature is 60-90° C., and the lamination time is 30-120 seconds.
5. The method for manufacturing a wireless charging project by using PIC to replace conventional CVL+SM according to claim 1, characterized in that: In the step S3 , the pre-baking temperature is 80-100° C. for 5-10 minutes, which is used to remove residual solvent inside the PIC and improve exposure accuracy.
6. The method of replacing conventional CVL+SM with PIC in manufacturing a wireless charging project according to claim 1, characterized in that: In the step S4 , the exposure process is performed in a UV light exposure machine.
7. The method of replacing conventional CVL+SM with PIC in manufacturing a wireless charging project according to claim 1, characterized in that: In the step S5 , a weakly alkaline water-based developer with a pH of 9.5-10.5 is used for development.
8. The method of replacing conventional CVL+SM with PIC in manufacturing a wireless charging project according to claim 1, characterized in that: In S5 , after the development is completed, the copper surface is immediately cleaned with deionized water or purified water to remove the residual developer and dissolved PIC material on the surface.
9. The method for manufacturing a wireless charging project by using PIC to replace conventional CVL+SM according to claim 1, characterized in that: In the step S6 , the high temperature curing temperature is 150-180° C. and the curing time is 30-60 minutes, so that the PIC is cross-linked to form a protective layer having both mechanical strength and flexibility.
Citation Information
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