Novel silicon-based OLED surface layer packaging structure and packaging method thereof

Abstract

The invention discloses a novel silicon-based OLED surface layer packaging structure and a packaging method thereof. The novel silicon-based OLED surface layer packaging structure is provided with a substrate layer, an OLED layer, a TFE layer, a photoresist layer and a color film layer which are sequentially arranged, a waterproof layer is further arranged, the waterproof layer is arranged on the substrate layer, and the OLED layer, the TFE layer, the photoresist layer and the color film layer are covered with the waterproof layer; a surface protection layer is further arranged, and the waterproof layer is covered with the surface protection layer. The waterproof layer replaces the waterproof layer of glass, the surface protection layer replaces the glass to protect the whole device, the purpose of waterproof protection of internal devices is achieved, the light transmittance is high, and the weight is light.

Description

Technical Field

[0001] The present invention belongs to the field of silicon-based OLEDs, and in particular relates to a novel silicon-based OLED surface packaging structure and a packaging method thereof. Background Art

[0002] In the process of implementing the present invention, the inventors discovered that the prior art has at least the following problems:

[0003] Current packaging methods for silicon-based OLEDs:

[0004] The current surface packaging method of silicon-based OLEDs is Dam glue + Fill glue + Cover Glass, and the Cover Glass mainly relies on the protection of the underlying devices.

[0005] Current product disadvantages of silicon-based OLED glass cover packaging:

[0006] (1) The thickness of the glass cover is 0.7mm, which causes the thickness of the entire silicon-based OLED screen to reach 1.5mm. When used in virtual reality products, the volume is relatively large.

[0007] (2) The thickness of the glass cover is 0.7mm, and the thickness of the silicon wafer is 0.775mm. The weight of the entire silicon-based OLED screen will also be heavier.

[0008] (3) Glass transmittance is about 90%, which will reduce the overall brightness by 10%

[0009] (4) The current cover glass packaging production line for silicon-based OLEDs requires a vacuum bonding process to complete, and the equipment investment is relatively high.

[0010] CN108365124A - OLED Packaging Method and OLED Packaging Structure discloses an OLED packaging method and OLED packaging structure. The OLED packaging method of the present invention provides an oleophilic film in the filler area of ​​the packaging cover. Because the oleophilic film has good lipophilicity, it attracts low-viscosity thermosetting filler, allowing the filler applied to the filler area to spread evenly to several corners of the filler area. However, this method fails to resolve the aforementioned technical issues. Summary of the Invention

[0011] The technical problem to be solved by the present invention is to provide a new silicon-based OLED surface packaging structure and its packaging method, in which the waterproof layer replaces the waterproof function of glass, and the surface protective layer replaces the glass to protect the entire device, thereby achieving the purpose of waterproof protection of the internal device, while having high light transmittance and light weight.

[0012] In order to solve the above technical problems, the technical solution adopted by the present invention is: a new silicon-based OLED surface packaging structure and packaging method thereof, comprising: a substrate layer, an OLED layer, a TFE layer, a photoresist layer and a color filter layer arranged in sequence;

[0013] A waterproof layer is also provided, which is arranged on the substrate layer and covers the OLED layer, the TFE layer, the photoresist layer and the color film layer;

[0014] A surface protection layer is also provided, which covers the waterproof layer.

[0015] The waterproof layer is made of fluorine-containing waterproof material.

[0016] The surface protection layer is made of a material with a hardness of 3H; and the visible light transmittance of the surface protection layer is greater than 98.5%.

[0017] The packaging method of the above-mentioned novel silicon-based OLED surface packaging structure includes the following steps: 1) OLED product preparation; 2) waterproof layer coating; 3) waterproof layer curing; 4) surface protection layer coating; 5) first curing; 6) second curing.

[0018] In the above step 2), the silicon wafer substrate after the previous process is sent to the waterproof layer coating machine. The coating process adopts IJP spraying, the coating amount accuracy is ±0.5%, and the waterproof layer is a fluorine-containing material.

[0019] In the above step 3), the coated silicon wafer substrate is transferred to a hot plate furnace for heating and curing; the curing temperature is 90° C. and the curing time is 15 minutes.

[0020] In the above step 4), the coated silicon wafer substrate is fed into a surface protective layer coater, and the coating process adopts IJP spraying, with a coating amount accuracy of ±0.5%.

[0021] In step 5) above, the coated silicon wafer substrate is transported to a UV curing furnace. At this time, the glass surface faces the UV lamp and the curing energy reaches 3000mj / cm2.

[0022] In the above step 6), the UV-cured silicon wafer substrate is transferred to a hot plate furnace for heating and curing at a curing temperature of 90° C. for 30 minutes.

[0023] One of the above technical solutions has the following advantages or beneficial effects: Dam & Fill (frame glue and filler) and glass cover are replaced with a waterproof layer and a surface protection layer. The waterproof layer replaces the waterproofing of the glass, and the surface protection layer replaces the glass to protect the entire device. It also has high light transmittance and is lightweight. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a schematic structural diagram of a novel silicon-based OLED surface encapsulation structure provided in an embodiment of the present invention;

[0025] Figure 2 for Figure 1 The processing principle diagram of the new silicon-based OLED surface encapsulation structure;

[0026] The marks in the above figure are: 1. Substrate layer (CMOS driving circuit layer), 2. OLED layer (organic light-emitting layer), 3. TFE layer (thin film encapsulation layer), 4. Photoresist layer (planarization layer), 5. Color film layer (color filter layer), 6. Waterproof layer, 7. Surface protection layer. DETAILED DESCRIPTION

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0028] Example 1

[0029] See also Figures 1-2 A novel silicon-based OLED surface encapsulation structure and encapsulation method thereof comprises, in order: a substrate layer 1, an OLED layer 2, a TFE layer 3, a photoresist layer 4, and a color filter layer 5; a waterproof layer 6 disposed on the substrate layer 1 and covering the OLED layer 2, TFE layer 3, photoresist layer 4, and color filter layer 5; and a surface protective layer 7 covering the waterproof layer 6. The waterproof layer 6 replaces the glass for waterproofing, and the surface protective layer replaces the glass for protecting the entire device, achieving the purpose of waterproofing the internal components while also having high light transmittance and light weight.

[0030] The waterproof layer 6 is made of fluorine-containing waterproof material (fluorine-containing epoxy resin).

[0031] The surface protection layer 7 is made of a material with a hardness of 3H (such as acrylic resin or epoxy resin); the visible light transmittance of the surface protection layer 7 is greater than 98.5%.

[0032] The beneficial effects are as follows:

[0033] (1) The transmittance of the glass cover used in the current technology is 90%, while the light transmittance of the organic materials used in the present invention is 98%, totaling 96%. This can improve the device brightness by about 6%, or save energy by an equivalent amount.

[0034] (2) The glass and silicon wafers used in current silicon-based OLED technology are the main sources of weight for the display screen. In the present invention, the glass wafer is eliminated, and the corresponding device weight is reduced by 40%.

[0035] (3) The glass and silicon wafers used in current silicon-based OLED technology have a thickness of about 1.5 mm for the entire micro-display device, which will occupy valuable space in AR products. In the present invention, the thickness of the micro-display device is 0.8 mm, and the volume of the entire device is reduced by 46%.

[0036] (4) Currently, the equipment required for the cover plate packaging of silicon-based OLEDs includes a frame glue coater, a fill coater, a vacuum laminating machine, a glue curing device, etc., which requires a lot of equipment and has complicated process steps. The process flow in the present invention has simple equipment layout, mainly including a fill coater and a glue curing device, and the process steps are simple.

[0037] Example 2

[0038] The above-mentioned novel encapsulation method of silicon-based OLED surface encapsulation structure includes the following steps: 1) OLED product preparation; 2) waterproof layer 6 coating; 3) waterproof layer 6 curing; 4) surface protection layer 7 coating; 5) first curing; 6) second curing. The whole process requires the coating of waterproof layer 6, curing of waterproof layer 6, coating of surface protection layer, curing of surface protection layer, and finally forming Figure 1 The structure shown. The required waterproof layer 6 in this invention is made of an inkjet-printable waterproof organic material; the surface protective layer is made of an inkjet-printable surface-hardened material with a hardness of up to 3H. The waterproof layer 6 replaces the waterproofing of glass, and the surface protective layer replaces the glass to protect the entire device, achieving the purpose of waterproof protection of internal components while also having high light transmittance and light weight.

[0039] In step 2), the silicon wafer substrate, having undergone the previous process, is fed into the waterproof layer 6 coating machine. The coating process uses IJP spraying with a coating accuracy of ±0.5%. The waterproof layer 6 is made of a fluorine-containing material. This step aims to evenly coat the waterproof layer solution onto the substrate. Using IJP technology for pattern control, a coating accuracy of ±0.5% ensures uniform thickness of the waterproof layer.

[0040] In step 3), the coated silicon wafer substrate is transferred to a hot plate furnace for curing at 90°C for 15 minutes. The 90°C high temperature evaporates the solvent in the waterproof layer, allowing the solute to polymerize, resulting in a polymeric waterproof film. 90°C is a temperature that the organic light-emitting layer can withstand and meets the energy requirements for solute polymerization. A 15-minute curing period ensures complete solute reaction.

[0041] In step 4), the coated silicon wafer substrate is fed into the surface protective layer coater 7, where the coating is applied using IJP spraying with a coating accuracy of ±0.5%. This step ensures a uniform coating of the surface protective layer solution onto the substrate. Using IJP technology for pattern control, a coating accuracy of ±0.5% ensures a uniform thickness of the waterproof layer.

[0042] In step 5), the coated silicon wafer is transferred to a UV curing oven. The glass surface is facing the UV lamp, and curing is completed when the energy reaches 3000 mj / cm². This step primarily hardens the surface protective layer, and 3000 mj / cm² ensures that the protective layer is fully cured.

[0043] In step 6), the UV-cured silicon wafer substrate is transferred to a hot plate furnace for heat curing at 90°C for 30 minutes. This step is primarily intended to fully crosslink the surface protective layer, forming the final surface protective layer. The 30-minute temperature at 90°C provides sufficient energy and reaction time for the crosslinking process, allowing for a more complete monomer reaction.

[0044] The beneficial effects are as follows:

[0045] (1) The transmittance of the glass cover used in the current technology is 90%, while the light transmittance of the organic materials used in the present invention is 98%, totaling 96%. This can improve the device brightness by about 6%, or save energy by an equivalent amount.

[0046] (2) The glass and silicon wafers used in current silicon-based OLED technology are the main sources of weight for the display screen. In the present invention, the glass wafer is eliminated, and the corresponding device weight is reduced by 40%.

[0047] (3) The glass and silicon wafers used in current silicon-based OLED technology have a thickness of about 1.5 mm for the entire micro-display device, which will occupy valuable space in AR products. In the present invention, the thickness of the micro-display device is 0.8 mm, and the volume of the entire device is reduced by 46%.

[0048] (4) Currently, the equipment required for the cover plate packaging of silicon-based OLEDs includes a frame glue coater, a fill coater, a vacuum laminating machine, a glue curing device, etc., which requires a lot of equipment and has complicated process steps. The process flow in the present invention has simple equipment layout, mainly including a fill coater and a glue curing device, and the process steps are simple.

[0049] Example 3

[0050] The process flow of the surface encapsulation in the present invention is as follows ( Figure 2 ):

[0051] Waterproof layer 6 coating → Waterproof layer 6 curing → Hard Coat (surface protection layer 7) coating → Hard Coat curing;

[0052] The specific process steps are as follows:

[0053] In the first step, the robot (robotic arm) sends the silicon wafer substrate after the previous process into the waterproof layer 6 coating machine. The coating process adopts IJP spraying, and the coating amount accuracy is ±0.5%. The waterproof layer 6 is a special fluorine-containing material.

[0054] In the second step, the robot moves the coated silicon wafer substrate to a hot plate furnace for heating and curing at 90°C for 15 minutes.

[0055] In the third step, the robot feeds the coated silicon wafer substrate into the Hard Coat coater. The coating process uses IJP spraying, with a coating accuracy of ±0.5%. The Hard Coat is a special material with a hardness of 3H and a visible light transmittance of >98.5%.

[0056] In the fourth step, the robot moves the coated silicon wafer substrate to the UV curing furnace. At this time, the glass surface needs to face the UV lamp, and the curing ends when the curing energy reaches 3000mj / cm2.

[0057] In the fifth step, the robot moves the UV-cured silicon wafer substrate to a hot plate furnace for heating and curing at 90°C for 30 minutes.

[0058] The whole process requires the coating of waterproof layer 6, curing of waterproof layer 6, coating of surface protective layer, curing of surface protective layer, and finally forming Figure 1 The structure shown.

[0059] The waterproof layer 6 required in this invention is a waterproof organic material that can be inkjet printed; the surface protection layer is a surface hardening material that can be inkjet printed, and the hardness can reach 3H.

[0060] The beneficial effects are as follows:

[0061] (1) The transmittance of the glass cover used in the current technology is 90%, while the light transmittance of the organic materials used in the present invention is 98%, totaling 96%. This can improve the device brightness by about 6%, or save energy by an equivalent amount.

[0062] (2) The glass and silicon wafers used in current silicon-based OLED technology are the main sources of weight for the display screen. In the present invention, the glass wafer is eliminated, and the corresponding device weight is reduced by 40%.

[0063] (3) The glass and silicon wafers used in current silicon-based OLED technology have a thickness of about 1.5 mm for the entire micro-display device, which will occupy valuable space in AR products. In the present invention, the thickness of the micro-display device is 0.8 mm, and the volume of the entire device is reduced by 46%.

[0064] (4) Currently, the equipment required for the cover plate packaging of silicon-based OLEDs includes a frame glue coater, a fill coater, a vacuum laminating machine, a glue curing device, etc., which requires a lot of equipment and has complicated process steps. The process flow in the present invention has simple equipment layout, mainly including a fill coater and a glue curing device, and the process steps are simple.

[0065] In the description of the present invention, it should be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "the other end", "upper", "one side", "top", "inside", "front", "center", "both ends", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0066] In the present invention, unless otherwise clearly stipulated and limited, the terms "install", "set", "connect", "fix", "screw" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. Unless otherwise clearly defined, ordinary technicians in this field can understand the specific meanings of the above terms in the present invention according to the specific circumstances.

[0067] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A novel silicon-based OLED surface encapsulation structure and encapsulation method thereof, characterized in that: The method comprises the following steps: a substrate layer, an OLED layer, a TFE layer, a photoresist layer and a color filter layer; A waterproof layer is also provided, which is arranged on the substrate layer and covers the OLED layer, the TFE layer, the photoresist layer and the color film layer; A surface protection layer is also provided, which covers the waterproof layer.

2. The novel silicon-based OLED surface encapsulation structure and encapsulation method thereof according to claim 1, characterized in that: The waterproof layer is made of fluorine-containing waterproof material.

3. The novel silicon-based OLED surface encapsulation structure according to claim 2, characterized in that: The surface protection layer is made of a material with a hardness of 3H; and the visible light transmittance of the surface protection layer is greater than 98.5%.

4. The novel encapsulation method of the silicon-based OLED surface encapsulation structure according to claim 3, wherein: The method comprises the following steps: 1) preparing OLED products; 2) coating a waterproof layer; 3) curing the waterproof layer; 4) coating a surface protection layer; 5) first curing; and 6) second curing.

5. The novel encapsulation method of the silicon-based OLED surface encapsulation structure according to claim 4, characterized in that: In the above step 2), the silicon wafer substrate after the previous process is sent to the waterproof layer coating machine. The coating process adopts IJP spraying, the coating amount accuracy is ±0.5%, and the waterproof layer is a fluorine-containing material.

6. The novel encapsulation method of the silicon-based OLED surface encapsulation structure according to claim 5, characterized in that: In the above step 3), the coated silicon wafer substrate is transferred to a hot plate furnace for heating and curing; the curing temperature is 90° C. and the curing time is 15 minutes.

7. The novel encapsulation method of the silicon-based OLED surface encapsulation structure according to claim 6, characterized in that: In the above step 4), the coated silicon wafer substrate is fed into a surface protective layer coater, and the coating process adopts IJP spraying, with a coating amount accuracy of ±0.5%.

8. The novel encapsulation method of the silicon-based OLED surface encapsulation structure according to claim 7, wherein: In step 5) above, the coated silicon wafer substrate is transported to the UV curing furnace. At this time, the glass surface is facing the UV lamp and the curing energy reaches 3000mj / cm 2 Then it ends.

9. The novel encapsulation method of the silicon-based OLED surface encapsulation structure according to claim 8, wherein: In the above step 6), the UV-cured silicon wafer substrate is transferred to a hot plate furnace for heating and curing at a curing temperature of 90° C. for 30 minutes.

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