Anisotropic conductive member and joined body

Abstract

The invention provides an anisotropic conductive member and a bonded body in which buckling of a conductive path is suppressed. This anisotropic conductive member is provided with: an insulating substrate having electrical insulating properties; and a plurality of conductive paths that penetrate in the thickness direction of the insulating substrate, are provided in a state of being electrically insulated from each other, and have protruding portions that protrude from at least one surface of the insulating substrate. In a cross-section in the thickness direction of the insulating base material, the surface of the insulating base material on which the protruding parts of the conductive paths protrude has a plurality of top parts and contact parts at which the plurality of protruding parts are in contact with the insulating base material, respectively. The arithmetic average distance between the plurality of contact parts and the plurality of top parts in the thickness direction is 2-200 nm.

Description

Technical Field

[0001] The present invention relates to an anisotropic conductive component and a joint body having multiple conductive paths, the multiple conductive paths being arranged to penetrate along the thickness direction of an insulating substrate and having protrusions protruding from at least one surface of the insulating substrate. In particular, the present invention relates to an anisotropic conductive component and a joint body in which the surface of the insulating substrate from which the protrusions protrude has multiple tops and multiple contact portions where the protrusions contact the insulating substrate. Background Art

[0002] There is an anisotropic conductive component having a conductive path in which a plurality of through-holes provided in an insulating base material are filled with a conductive material such as metal.

[0003] Anisotropic conductive components achieve electrical connection between electronic components such as semiconductor elements and circuit boards simply by inserting them between them and applying pressure. Therefore, they are widely used as electrical connection components for electronic components such as semiconductor elements and as inspection connectors for functional inspections.

[0004] In particular, the miniaturization of electronic components, such as semiconductor elements, is becoming increasingly prominent. Conventional methods for directly connecting to wiring substrates, such as wire bonding, flip-chip bonding, and thermocompression bonding, sometimes fail to guarantee sufficient electrical connection stability. Consequently, anisotropic conductive components are attracting attention as electronic connection components.

[0005] For example, Patent Document 1 describes an anisotropically conductive bonding component comprising an insulating substrate made of an inorganic material, a plurality of conductive paths formed of a conductive component, and a resin layer disposed over the entire surface of the insulating substrate. The conductive paths are insulated from each other and extend through the thickness of the insulating substrate. The conductive paths are parallel to each other and have protrusions extending from the surface of the insulating substrate, with the ends of the protrusions embedded in the resin layer.

[0006] Previous technical literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2018-037509 Summary of the Invention

[0009] Technical issues to be solved by the invention

[0010] When the anisotropic conductive bonding component of Patent Document 1 is used as an electronic connection component, the conductive path of the anisotropic conductive bonding component is bonded to an electrode of a semiconductor element to be connected. During bonding, the protruding portion of the conductive path protruding from the surface of the insulating substrate may be buckled.

[0011] If the protruding portion of the conductive path buckles during bonding, the bonding between the conductive path and the electrode of the semiconductor element may be insufficient, and sufficient bonding strength may not be achieved. Therefore, it is desirable to avoid buckling of the conductive path.

[0012] An object of the present invention is to provide an anisotropic conductive member and a bonded body in which buckling of a conductive path is suppressed.

[0013] Means for solving technical problems

[0014] In order to achieve the above-mentioned object, the invention [1] is an anisotropic conductive component comprising: an insulating substrate having electrical insulation properties; and a plurality of conductive paths extending through the insulating substrate in a thickness direction and arranged in an electrically insulated state from one another and having protrusions protruding from at least one surface of the insulating substrate, wherein, in a cross section in the thickness direction of the insulating substrate, the surface of the insulating substrate from which the protrusions of the conductive paths protrude has a plurality of tops and contact portions where the plurality of protrusions are in contact with the insulating substrate, respectively, and the arithmetic mean distance between the plurality of contact portions and the plurality of tops in the thickness direction is 2 nm to 200 nm.

[0015] Invention [2] is the anisotropic conductive component according to invention [1], wherein:

[0016] The conductive path is composed of Cu, Au or Al.

[0017] Invention [3] is the anisotropic conductive component according to invention [1] or [2], wherein:

[0018] When the diameter of the protrusion is d and the length of the protrusion in the thickness direction of the insulating base material is h, d / h is 0.1 to 20.

[0019] Invention [4] is the anisotropic conductive component according to any one of Inventions [1] to [3], wherein

[0020] The length of the protrusion in the thickness direction of the insulating base material is 6 to 6000 nm.

[0021] Invention [5] is a bonded body, which is formed by bonding an anisotropic conductive component and a bonded component, wherein a resin is filled between the anisotropic conductive component and the bonded component, and the anisotropic conductive component comprises: an insulating substrate having electrical insulation properties; and a plurality of conductive paths penetrating the insulating substrate in a thickness direction and arranged in an electrically insulated state from each other and having protrusions protruding from at least one surface of the insulating substrate, wherein, in a cross section in the thickness direction of the insulating substrate, the surface of the insulating substrate from which the protrusions of the conductive paths protrude has a plurality of tops and contact portions in which the plurality of protrusions are in contact with the insulating substrate, respectively, and the arithmetic mean distance between the plurality of contact portions and the plurality of tops in the thickness direction is 2 nm to 200 nm.

[0022] Invention [6] is the conjugate according to invention [5], wherein:

[0023] The member to be joined includes a metal layer and a resin layer, and the metal layer is exposed from the resin layer.

[0024] Invention [7] is the conjugate according to invention [5], wherein:

[0025] The member to be joined has a plurality of metal layers, and at least one of the plurality of metal layers has a different height.

[0026] Invention [8] is the conjugate according to invention [6], wherein:

[0027] The member to be joined has a joining surface provided with a plurality of metal layers, and the area of ​​the joining surface is wider than the area of ​​the surface where the protruding portion of the anisotropic conductive member protrudes.

[0028] Effects of the Invention

[0029] According to the present invention, an anisotropic conductive member and a bonded body in which buckling of a conductive path is suppressed can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a schematic cross-sectional view showing an example of an anisotropic conductive member according to an embodiment of the present invention.

[0031] Figure 2 This is a schematic plan view showing an example of an anisotropic conductive member according to an embodiment of the present invention.

[0032] Figure 3 This is a schematic cross-sectional view showing an enlarged portion of an example of an anisotropic conductive member according to an embodiment of the present invention.

[0033] Figure 4 This is a schematic cross-sectional view showing a first example of a bonded structure according to an embodiment of the present invention.

[0034] Figure 5This is a schematic cross-sectional view showing an enlarged portion of a first example of a bonded structure according to an embodiment of the present invention.

[0035] Figure 6 It is a schematic cross-sectional view showing a method for manufacturing a first example of a bonded body according to an embodiment of the present invention.

[0036] Figure 7 This is a schematic cross-sectional view showing an enlarged portion of a second example of a bonded structure according to an embodiment of the present invention.

[0037] Figure 8 This is a schematic cross-sectional view showing one step of an example of a method for manufacturing an anisotropic conductive member according to an embodiment of the present invention.

[0038] Figure 9 This is a schematic cross-sectional view showing one step of an example of a method for manufacturing an anisotropic conductive member according to an embodiment of the present invention.

[0039] Figure 10 This is a schematic cross-sectional view showing one step of an example of a method for manufacturing an anisotropic conductive member according to an embodiment of the present invention.

[0040] Figure 11 This is a schematic cross-sectional view showing one step of an example of a method for manufacturing an anisotropic conductive member according to an embodiment of the present invention.

[0041] Figure 12 This is a schematic cross-sectional view showing one step of an example of a method for manufacturing an anisotropic conductive member according to an embodiment of the present invention.

[0042] Figure 13 This is a schematic cross-sectional view showing one step of an example of a method for manufacturing an anisotropic conductive member according to an embodiment of the present invention.

[0043] Figure 14 This is a schematic cross-sectional view showing one step of an example of a method for manufacturing an anisotropic conductive member according to an embodiment of the present invention. DETAILED DESCRIPTION

[0044] Hereinafter, the anisotropic conductive member and the bonded body of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

[0045] The drawings described below are illustrative drawings for explaining the present invention and are simplified or exaggerated for the purpose of explaining the present invention. Therefore, the present invention is not limited to the drawings shown below.

[0046] In addition, the following "to" indicating a numerical range includes the values ​​listed on both sides. For example, "ε is a value εα to a value εβ" means that the range of ε is the range including the value εα and the value εα, and in mathematical notation, it is εα≤ε≤εα.

[0047] Unless otherwise specified, parallelism and orthogonality include the error range generally allowed in the technical field.

[0048] Unless otherwise specified, the temperature, time, and pressure include the error range generally allowed in this technical field.

[0049] Furthermore, “same” includes the error range generally allowed in the technical field. Furthermore, “entire surface” and the like include the error range generally allowed in the technical field.

[0050] Hereinafter, the anisotropic conductive member and the bonded body will be described in detail.

[0051] [An example of anisotropic conductive member]

[0052] Figure 1 This is a schematic cross-sectional view showing an example of an anisotropic conductive member according to an embodiment of the present invention. Figure 2 This is a schematic plan view showing an example of an anisotropic conductive member according to an embodiment of the present invention. Figure 3 This is a schematic cross-sectional view showing an enlarged portion of an example of an anisotropic conductive member according to an embodiment of the present invention.

[0053] exist Figure 1 and Figure 3 : shows a cross section of the insulating substrate 20 in the thickness direction Dt. Figure 2 It is from Figure 1 2 is a plan view of the insulating base material 20 when viewed from the surface 20 a side, and shows a state in which the resin layer 24 is not present.

[0054] Figure 1 The illustrated anisotropically conductive component 10 includes an electrically insulating base material 20, and a plurality of electrically insulated conductive paths 22 extending through the insulating base material 20 in the thickness direction Dt. The conductive paths 22 have protrusions extending from at least one surface. Furthermore, the component 10 includes a resin layer 24 covering at least one surface of the insulating base material 20. The anisotropically conductive component 10 exhibits electrical conductivity in the thickness direction Dt of the insulating base material 20.

[0055] In addition, the anisotropic conductive member 10 does not necessarily require the resin layer 24 , and may have a structure in which the resin layer 24 does not exist.

[0056] Multiple conductive pathways 22 are provided on an insulating substrate 20 in a state electrically insulated from one another. For example, the insulating substrate 20 has multiple pores 21 extending through the insulating substrate 20 in the thickness direction Dt. The conductive pathways 22 are provided in the pores 21. The conductive pathways 22 protrude from the front surface 20a of the insulating substrate 20. Furthermore, the conductive pathways 22 protrude from the back surface 20b of the insulating substrate 20.

[0057] The conductive path 22 only needs to protrude from one surface in the thickness direction Dt of the insulating base material 20. For example, a resin layer 24 is provided on the surface of the insulating base material 20 where the conductive path 22 protrudes. The resin layer 24 covers the protruding portion 22a of the conductive path 22, and the protruding portion 22a is embedded in the resin layer 24. In addition, the resin layer 24 covers the protruding portion 22b of the conductive path 22, and the protruding portion 22b is embedded in the resin layer 24.

[0058] The insulating base material 20 is composed of, for example, an anodic oxide film. The anodic oxide film is formed by, for example, anodizing a valve metal.

[0059] The front surface 20 a of the insulating base material 20 and the back surface 20 b of the insulating base material 20 are surfaces facing each other in the thickness direction Dt of the insulating base material 20 .

[0060] The anisotropic conductive member 10 has anisotropic conductivity and is conductive in the thickness direction Dt as described above, but has very low conductivity in the direction x parallel to the surface 20a of the insulating substrate 20. The direction x is perpendicular to the thickness direction Dt.

[0061] like Figure 2 As shown, the anisotropic conductive member 10 has a circular outer shape, for example. The outer shape and size of the anisotropic conductive member 10 are appropriately determined according to the application, etc., and the outer shape may be, for example, rectangular.

[0062] For example, the anisotropic conductive member 10 is bonded in a state where the resin layer 24 is not present, or in a state where the resin layer 24 is present but nothing is present on the surface 24 a .

[0063] like Figure 3 As shown, the surface 20a of the insulating substrate 20 is uneven and has a concavo-convex structure. A plurality of concave portions 20d are provided on the surface 20a of the insulating substrate 20. A concave portion 20d is provided in each conductive path 22. The concave portions 20d are arranged so as to surround the conductive path 22 with the conductive path 22 as the center.

[0064] exist Figure 3 In the cross section of the insulating base material 20 in the thickness direction Dt shown in FIG. 1 , the surface of the insulating base material 20 where the protrusion 22a protrudes, that is, Figure 3 The surface 20a in FIG. 1 has a plurality of top portions Pc and a plurality of contact portions Vc.

[0065] The top portion Pc is a portion where the surface of the insulating base 20 on the protrusion 22a side is higher in a cross section in the thickness direction Dt of the insulating base 20. The top portion Pc is, for example, a boundary portion between adjacent recesses 20d.

[0066] The contact portion Vc is the portion where each of the plurality of protrusions 22a contacts the insulating substrate 20 in a cross section taken along the thickness direction Dt of the insulating substrate 20. The contact portion Vc is located at the end of the protrusion 22a on the insulating substrate 20 side. More specifically, the contact portion Vc is located at the bottom of the recess 20d on the back surface 20b side of the insulating substrate 20.

[0067] In the anisotropic conductive component 10 , the arithmetic mean distance between the plurality of contact portions Vc and the plurality of top portions Pc in the thickness direction Dt is 2 nm to 200 nm, preferably 2 nm to 150 nm, more preferably 20 nm to 100 nm, and even more preferably 20 nm to 60 nm.

[0068] In the anisotropic conductive component 10, by setting the arithmetic mean distance δ between the plurality of contact portions Vc and the plurality of top portions Pc in the thickness direction Dt of the insulating substrate 20 where the protrusions 22a protrude, in the structure, to 2 nm to 200 nm, when a force is applied to the protrusions 22a in a direction parallel to the thickness direction Dt, the protrusions 22a are allowed to bend more in the direction x than in a case where the surface 20a of the insulating substrate 20 has a arithmetic mean distance of less than 2 nm. In other words, the side surfaces 22c of the protrusions 22a are allowed to displace more in the direction x within the recesses 20d than in a case where the surface 20a of the insulating substrate 20 has a flat surface. This prevents buckling of the protrusions 22a, thereby achieving sufficient bonding strength to the connected object and ensuring sufficient electrical conductivity with the connected object. Furthermore, contact with adjacent protrusions is prevented, thus suppressing the occurrence of short circuits.

[0069] Furthermore, when a force is applied to the protrusion 22a in a direction parallel to the thickness direction Dt, and the protrusion 22a deforms so that its diameter increases in the direction x, the protrusion 22a is allowed to deform so that its diameter increases in the direction x, compared to a case where the surface 20a of the insulating substrate 20 is flat. In this case, the diameter of the protrusion 22a is allowed to increase in the direction x within the recess 20d. Therefore, buckling of the protrusion 22a is suppressed. This also ensures sufficient bonding strength to the connected object, ensuring sufficient electrical conductivity with the connected object. Furthermore, contact with adjacent protrusions is prevented, thus suppressing the occurrence of short circuits.

[0070] When the arithmetic mean distance δ is less than 2 nm, when a force is applied to the protrusion 22a in a direction parallel to the thickness direction Dt, the amount of displacement of the protrusion 22a in the direction x is small, causing the protrusion 22a to buckle. Consequently, sufficient bonding strength cannot be achieved with the connection partner. If the protrusion 22a buckles, it may come into contact with adjacent protrusions, preventing sufficient electrical conductivity with the connection partner.

[0071] When the arithmetic mean distance δ exceeds 200 nm, the end portion on the insulating substrate 20 side is positioned closer to the center of the insulating substrate 20 in the thickness direction Dt, the recess 20d becomes deeper, and the protrusion 22a becomes substantially longer. Consequently, the protrusion is susceptible to buckling. When a force is applied to the protrusion 22a in a direction parallel to the thickness direction Dt, the protrusion buckles and contacts adjacent protrusions, failing to ensure sufficient electrical conductivity with the connected object.

[0072] The arithmetic mean distance δ can be calculated as follows, for example.

[0073] First, the anisotropic conductive member 10 is cut using a focused ion beam (FIB) to expose a cross section of the insulating base material 20 in the thickness direction Dt.

[0074] A field emission scanning electron microscope (FE-SEM) was used to obtain a photographic image of a cross section of the insulating base material 20 in the thickness direction Dt at a magnification of 150k.

[0075] In the photographic image, a reference point Pb is set at an arbitrary position on the back surface 20b side opposite to the front surface 20a of the insulating substrate 20. A reference line Ls is set parallel to the direction x passing through the reference point Pb.

[0076] In the photographic image, 10 top points Pc are selected from the top points Pc in descending order relative to the reference line Ls. Also, 10 contact points Vc are selected from the top points Vc in descending order relative to the reference line Ls.

[0077] In the photographic image, the distance from the reference line Ls is calculated for each of the 10 points corresponding to the selected tops Pc. The least squares method is used to calculate the average of the 10 distances between the points corresponding to the 10 tops Pc and the reference line Ls. The average value calculated using the least squares method is displayed as a dot in the photographic image. A line Lc is calculated that is parallel to the direction x passing through the points representing the average value of the tops Pc. The plane containing this parallel line Lc is the average plane of the surface 20a of the insulating substrate 20. Furthermore, the average plane of the surface 20a of the insulating substrate 20 serves as the basis for the length of the protrusion 22a.

[0078] In the photographic image, the distance from the reference line Ls is calculated for each of the ten points corresponding to the selected contact portions Vc. The least squares method is used to calculate the average of the ten distances between the ten points corresponding to the contact portions Vc and the reference line Ls. The average value calculated using the least squares method is displayed as a dot in the photographic image. A line Lb is calculated that is parallel to the direction x passing through the points representing the average value of the contact portions Vc. The plane containing this parallel line Lb is the average plane of the contact portions Vc.

[0079] The arithmetic mean distance δ is the absolute value of the difference between the average value of the top portion Pc, calculated using the least squares method, and the average value of the contact portion Vc, calculated using the least squares method. Specifically, the arithmetic mean distance δ is the distance between parallel lines Lc and Lb in the thickness direction Dt. Therefore, the arithmetic mean distance δ is obtained by calculating the distance between parallel lines Lc and Lb in the thickness direction Dt.

[0080] Although not shown in detail, the back surface 20b of the insulating substrate 20 is also Figure 3 The structure is the same as that of the front surface 20a of the insulating base material 20 shown in FIG. The arithmetic mean distance δ is also calculated for the back surface 20b of the insulating base material 20 in the same manner as that for the front surface 20a of the insulating base material 20 described above.

[0081] [First example of a conjugate]

[0082] Figure 4 This is a schematic cross-sectional view showing a first example of a bonded structure according to an embodiment of the present invention. Figure 5 This is a schematic cross-sectional view showing an enlarged portion of a first example of a bonded structure according to an embodiment of the present invention.

[0083] In addition, Figure 4 and Figure 5 In, with Figures 1 to 3 Components having the same structure as the anisotropic conductive member 10 shown are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0084] Figure 4 The bonded structure 12 shown is formed by bonding the anisotropic conductive member 10 to the bonded members, which are the semiconductor element 30 and the semiconductor element 31. The bonded members are the connection objects.

[0085] The bonded structure 12 is formed by filling a space between the anisotropic conductive member 10 and the bonded member with resin.

[0086] The semiconductor element 30 includes, for example, three electrodes 34 and an insulating layer 36 for preventing conduction between the three electrodes 34 on a surface 32 a of an element substrate 32 . The three electrodes 34 are at the same height from the surface 32 a of the element substrate 32 .

[0087] The semiconductor element 31 includes, for example, three electrodes 38 and an insulating layer 39 for preventing conduction between the three electrodes 38 on a surface 37 a of an element substrate 37 . The three electrodes 38 are at the same height from the surface 37 a of the element substrate 37 .

[0088] The electrodes 34 and 38 are connected to the conductive path 22 of the anisotropic conductive component 10. For example, Figure 5 As shown, the surfaces 34a of the electrodes 34 and the protrusions 22a of the conductive paths 22 are bonded together in a state of contact. At this point, the protrusions 22a of the conductive paths 22 are pressed by the surfaces 34a of the electrodes 34, causing them to deform. This, as described above, suppresses buckling of the protrusions 22a. Consequently, sufficient bonding strength can be achieved between the semiconductor elements 30 and 31 in the bonded structure 12. Furthermore, suppressing buckling of the protrusions 22a ensures sufficient electrical conductivity with the connected components. Furthermore, the protrusions 22a are prevented from contacting adjacent protrusions, thus preventing the occurrence of short circuits.

[0089] Electrodes 34 and 38 are used to exchange signals with the outside or to transfer voltage or current, and are made of, for example, copper or solder. Electrodes made of solder are also called solder bumps.

[0090] The structure of insulating layer 39 is not particularly limited as long as it can prevent conduction between the electrodes, and can be formed of any known insulating layer used in semiconductor devices. Examples of insulating layer 39 include silicon oxide (SiO2), silicon nitride (Si3N4), PSG (Phospho Silicate Glass), BPSG (Boron Phospho Silicate Glass), and SOG (Spin-On Glass).

[0091] The resin layer 33 is formed of, for example, the resin layer 24 of the anisotropic conductive member 10. At this time, the anisotropic conductive member 10 having the resin layer 24 is used for bonding.

[0092] Furthermore, the resin layer 33 may be formed of a resin layer (not shown) provided on the surface 34 a of the electrode 34 of the semiconductor element 30 and a resin layer (not shown) provided on the surface 38 a of the electrode 38 of the semiconductor element 31 .

[0093] Alternatively, after the conductive path 22 of the anisotropic conductive member 10 is bonded to the electrodes 34 and 38 , a resin agent may be supplied between the conductive path 22 and the electrode 34 and between the conductive path 22 and the electrode 38 to form the resin layer 33 .

[0094] (Method for Manufacturing the First Example of a Joined Body)

[0095] Figure 4 The junction body 12 shown is, for example, Figure 6 The joining is performed as shown.

[0096] Figure 6 It is a schematic cross-sectional view showing a method for manufacturing a first example of a bonded body according to an embodiment of the present invention.

[0097] In addition, Figure 6 In, with Figure 4 and Figure 5 The same components of the illustrated joint 12 are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0098] like Figure 6 As shown, the semiconductor element 30 and the semiconductor element 31 are arranged with the anisotropic conductive member 10 interposed therebetween. At this time, for example, alignment marks (not shown) provided on the semiconductor elements 30 and 31 and the anisotropic conductive member 10 are used for alignment.

[0099] Furthermore, the alignment using the alignment marks is not particularly limited as long as, for example, an image or a reflected image of the alignment marks can be acquired and the positional information of the alignment marks can be determined, and a known alignment method can be appropriately used.

[0100] like Figure 6 As shown, the anisotropic conductive member 10 is provided with a resin layer 24, and the resin layer 24 is formed Figure 4 The resin layer 33 of the bonded body 12 is shown.

[0101] Next, the semiconductor element 30 and the anisotropic conductive member 10 are bonded together, and the semiconductor element 31 and the anisotropic conductive member 10 are bonded together. Figure 4 The joint 12 is shown.

[0102] The steps of bonding the semiconductor element 30 and the anisotropically conductive component 10, and the semiconductor element 31 and the anisotropically conductive component 10, are referred to as bonding steps. In the bonding steps, for example, bonding can be performed in a provisional bonding state under pre-set conditions, but provisional bonding can also be omitted. The bonding in the bonding steps is also referred to as final bonding.

[0103] Provisional bonding refers to fixing the semiconductor elements 30 and 31 and the anisotropic conductive member 10 in a state where they are aligned.

[0104] The temperature conditions in the temporary bonding step are not particularly limited, but are preferably 0°C to 300°C, more preferably 10°C to 200°C, and particularly preferably room temperature (23°C) to 100°C.

[0105] Likewise, the pressurizing conditions in the provisional joining step are not particularly limited, but are preferably 10 MPa or less, more preferably 5 MPa or less, and particularly preferably 1 MPa or less.

[0106] The temperature conditions in the final joining are not particularly limited, but are preferably a temperature higher than the temperature in the temporary joining. Specifically, 120°C to 350°C is more preferable, and 200°C to 300°C is particularly preferable.

[0107] Furthermore, the pressurizing conditions during the final joining are not particularly limited, but are preferably 30 MPa or less, and more preferably 0.1 MPa to 20 MPa.

[0108] The time for the main joining is not particularly limited, but is preferably 1 second to 60 minutes, more preferably 5 seconds to 10 minutes.

[0109] By performing the final bonding under the above conditions, protrusion 22a of conductive path 22 bonds to surface 34a of electrode 34, and protrusion 22b of conductive path 22 bonds to surface 38a of electrode 38. At this time, as described above, both protrusions 22a and 22b of conductive path 22 are prevented from buckling. For example, protrusions 22a and 22b are prevented from collapsing and contacting adjacent protrusions 22a and 22b. This ensures sufficient bonding strength and electrical conductivity with the connected object, while also preventing the occurrence of short circuits.

[0110] [Second example of a conjugate]

[0111] Figure 7 This is a schematic cross-sectional view showing an enlarged portion of a second example of a bonded structure according to an embodiment of the present invention.

[0112] In addition, Figure 7 In, with Figure 4 and Figure 5 The same components of the illustrated joint 12 are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0113] and Figure 4 and Figure 5 Compared with the joint 12 shown, Figure 7 The difference of the junction body 13 shown is that the semiconductor element 30 has electrodes 35 of different heights. The other structures are the same as those of FIG. Figure 4 and Figure 5 The structure is the same as that of the joint body 12 shown. The height of the electrode 35 is higher than that of the electrode 34.

[0114] In the bonded structure 13, the electrode 34 and the tall electrode 35 are bonded to the anisotropically conductive component 10. In the bonded structure 13, of the electrodes 34 and 35, the electrode 35 is closer to the anisotropically conductive component 10, causing the protrusion 22a of the conductive path 22 to deform more. In this case, as described above, buckling of the protrusion 22a can be suppressed. This ensures sufficient bonding strength between the semiconductor element 30 and the semiconductor element 31, even in a structure where the semiconductor element 30 has a relatively tall electrode 35. Furthermore, buckling of the protrusion 22a can be suppressed, thereby ensuring sufficient conductivity and preventing the occurrence of short circuits.

[0115] In the bonded bodies 12 and 13 , the bonded members have bonding surfaces provided with a plurality of metal layers, and the area of ​​the bonding surfaces is preferably larger than the area of ​​the protruding surfaces of the protruding portions of the anisotropic conductive member.

[0116] Here, in the semiconductor elements 30 and 31, a plurality of electrodes are provided on the surface of the element substrate, which corresponds to the bonding surface. The surface area of ​​the element substrate is preferably larger than the surface area of ​​the front face 20a and back face 20b of the insulating base material 20 where the protrusions 22a and 22b of the anisotropic conductive member 10 protrude.

[0117] Hereinafter, the structure of the anisotropic conductive member will be described in more detail.

[0118] (Insulating base material)

[0119] The insulating substrate 20 has electrical insulation properties and maintains a plurality of conductive paths 22 made of a conductive material in an electrically isolated state. The insulating substrate 20 has a plurality of pores 21 that form the conductive paths 22. The composition of the insulating substrate will be described later.

[0120] The length of the insulating substrate 20 in the thickness direction Dt, i.e., the thickness ht of the insulating substrate 20, is preferably in the range of 1 to 1000 μm, more preferably in the range of 5 to 500 μm, further preferably in the range of 10 to 300 μm, and particularly preferably in the range of 10 μm to 30 μm. When the thickness of the insulating substrate 20 is within this range, the handling of the insulating substrate 20 is improved.

[0121] The thickness of the insulating substrate is determined by calculating the line Lc for each of the front surface 20a and back surface 20b of the insulating substrate 20. The distance between the line Lc on the front surface 20a and the line Lc on the back surface 20b in the thickness direction Dt is defined as the thickness of the insulating substrate.

[0122] The insulating substrate 20 may be made of an inorganic material and have a resistivity (1014 Ω·cm), there is no particular limitation.

[0123] In addition, "composed of inorganic materials" is a provision used to distinguish it from the polymer material constituting the resin layer described later. It is a provision that uses inorganic materials as the main component (50% by mass or more), rather than a provision limited to an insulating substrate composed only of inorganic materials.

[0124] Examples of the insulating substrate include metal oxide substrates, metal nitride substrates, glass substrates, ceramic substrates such as silicon carbide and silicon nitride, carbon substrates such as diamond-like carbon, polyimide substrates, and composite materials thereof. In addition to these, the insulating substrate may be a substrate in which a film is formed of an inorganic material containing 50% by mass or more of a ceramic material or a carbon material on an organic material having through-holes.

[0125] Micropores having a desired average opening diameter are formed as through-holes in the insulating substrate. From the perspective of facilitating formation of a conductive path, the insulating substrate is preferably a metal oxide substrate, more preferably an anodic oxide film of a valve metal.

[0126] Here, as valve metals, specifically, aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, and antimony can be cited. Among these, aluminum anodic oxide films (substrates) are preferred because they have good dimensional stability and are relatively inexpensive. Therefore, it is preferred to use an aluminum substrate to form the anodic oxide film as an insulating substrate and manufacture an anisotropic conductive component.

[0127] The thickness of the anodic oxide film is equal to the thickness of the insulating base material 20 .

[0128] <Aluminum substrate>

[0129] The aluminum substrate used to form the anodized film as an insulating substrate is not particularly limited. Specific examples include a pure aluminum plate; an alloy plate with aluminum as the main component and containing trace amounts of foreign elements; a substrate with high-purity aluminum vapor-deposited on low-purity aluminum (such as recycled materials); a substrate with high-purity aluminum coated on the surface of a silicon wafer, quartz, glass, etc. by vapor deposition, sputtering, etc.; a resin substrate obtained by laminating aluminum; and the like.

[0130] In an aluminum substrate, the aluminum purity of the surface on which the anodic oxide film is formed by the anodizing treatment step is preferably 99.5% by mass or greater, more preferably 99.9% by mass or greater, and even more preferably 99.99% by mass or greater. When the aluminum purity is within the above range, the orderliness of the through-hole arrangement becomes sufficient. Micropores are pores that have become fine holes.

[0131] The aluminum substrate is not particularly limited as long as an anodic oxide film can be formed thereon. For example, a JIS (Japanese Industrial Standards) 1050 material can be used.

[0132] Furthermore, it is preferable that the surface of the aluminum substrate on the side to be subjected to the anodizing treatment step is subjected to heat treatment, degreasing treatment, and mirror finishing treatment in advance.

[0133] Here, regarding the heat treatment, degreasing treatment, and mirror finishing treatment, the same treatments as those described in paragraphs

[0044] to

[0054] of Japanese Patent Application Laid-Open No. 2008-270158 can be performed.

[0134] The mirror finishing treatment before the anodizing treatment is, for example, electrolytic polishing. For the electrolytic polishing, an electrolytic polishing solution containing phosphoric acid can be used.

[0135] <Average Pore Diameter>

[0136] The average diameter of the pores 21 is preferably 1 μm or less, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm. The average diameter d of the pores 21 is 1 μm or less. Within this range, conductive paths 22 having the above average diameter can be obtained.

[0137] The average diameter of the pores 21 can be determined, for example, as follows. First, a scanning electron microscope (SEM) is used to photograph the surface of the insulating substrate 20 from above at a magnification of 100 to 10,000 times to obtain a photographic image. From the photographic image, at least 20 pores connected in a ring are extracted, and their diameters are measured as the opening diameters. The average of these opening diameters is then calculated as the average pore diameter.

[0138] Furthermore, the magnification can be appropriately selected within the above range to obtain a photographic image capable of capturing 20 or more pores. Furthermore, the opening diameter is measured as the maximum distance between the ends of the pores. That is, the shape of the pore opening is not limited to being roughly circular. Therefore, if the opening is non-circular, the maximum distance between the ends of the pores is used as the opening diameter. Therefore, even in the case of a pore with a shape that integrates two or more pores, these are considered a single pore, and the opening diameter is the maximum distance between the ends of the pores.

[0139] <Conductive Path>

[0140] As described above, the plurality of conductive paths 22 are provided on the insulating base material 20 (eg, an anodic oxide film) in a state of being electrically insulated from each other.

[0141] The plurality of conductive paths 22 are respectively columnar conductors having conductivity and are made of a conductive material. The conductive material is not particularly limited, and metals can be cited as examples. As specific examples of metals, gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), zinc (Zn) and cobalt (Co) can be preferably cited. As the conductive material, copper (Cu), gold (Au), aluminum (Al), nickel (Ni) and cobalt (Co) are preferably cited from the viewpoint of conductivity and formation based on electroplating. o ), more preferably copper (Cu), gold (Au) and aluminum (Al), further preferably copper (Cu).

[0142] Metals are superior in ductility and other properties compared to oxide conductors and are easily deformed, even when compressed during joining. Therefore, the conductive path is preferably made of metal.

[0143] The average diameter d of the conductive paths 22 is preferably 1 μm or less, more preferably 5 to 500 nm, further preferably 20 to 400 nm, further preferably 40 to 200 nm, and most preferably 50 to 100 nm.

[0144] The density of the conductive paths 22 is preferably 20,000 / mm 2 More than 2 million / mm 2 More than 10 million pieces / mm 2 More than 50 million / mm 2 More than 100 million / mm is most preferred 2 above.

[0145] Furthermore, the center-to-center distance p between adjacent conductive paths 22 is preferably 20 nm to 500 nm, more preferably 40 nm to 200 nm, and even more preferably 50 nm to 140 nm.

[0146] Regarding the conductive path 22, the interval w between adjacent protrusions (refer to Figure 1 ) is 20 nm to 200 nm, preferably 40 nm to 100 nm. When the spacing between adjacent protrusions is within this range, the spacing between conductive paths 22 can be maintained even on the front surface 20a or back surface 20b of the insulating substrate 20. This prevents short circuits in the conductive paths 22 during bonding, improving bonding reliability.

[0147] The average diameter of the conductive paths can be determined, for example, as follows. First, a scanning electron microscope is used to photograph the surface of the insulating substrate from directly above at a magnification of 100 to 10,000 times to obtain a photographic image. From the photographic image, at least 20 conductive paths connected in a ring are selected, and their diameters are measured as the opening diameters. The average of these opening diameters is then calculated as the average diameter of the conductive paths.

[0148] Furthermore, the magnification can be appropriately selected within the above range to obtain a photographic image capable of extracting 20 or more conductive pathways. Furthermore, if the opening is non-circular, the maximum distance between the ends of the conductive pathway is used as the opening diameter. Therefore, even in the case of a conductive pathway with a shape such as two or more conductive pathways integrated, these pathways are considered a single conductive pathway, and the maximum distance between the ends of the conductive pathways is used as the opening diameter. The average diameter d of the conductive pathway 22 is the same as the average diameter of the protrusion.

[0149] If the shape of the conductive path 22 on the surface 20a side of the insulating substrate 20 is not circular, the average diameter on the surface 20a side of the insulating substrate 20 is the average diameter of the equivalent circle diameter. Furthermore, if the shape of the conductive path 22 on the back surface 20b side of the insulating substrate 20 is not circular, the average diameter on the back surface 20b side of the insulating substrate 20 is the average diameter of the equivalent circle diameter.

[0150] The average diameter d of the conductive path 22 on the surface 20a side of the insulating substrate 20 can be measured from a surface image of the surface 20a of the insulating substrate 20 obtained using a scanning electron microscope. The average diameter d of the conductive path 22 on the back surface 20b of the insulating substrate 20 can be measured from a back surface image of the back surface 20b of the insulating substrate 20 obtained using a scanning electron microscope.

[0151] As described above, when using images of the front and back surfaces, if protrusions make it difficult to measure the average diameter, the protrusions can be removed by dissolution or other means. This will reveal pores. In this state, the opening diameters of multiple pores in the front image can be measured, and the average opening diameter of the pores on the front surface can be used instead of the average diameter on the front surface. Similarly, the opening diameters of multiple pores in the back image can be measured, and the average opening diameter of the pores on the back surface can be used instead of the average diameter on the back surface.

[0152] The average opening diameter of the pores can be measured, for example, as follows. First, 20 sites corresponding to pores are selected from the surface image. The diameters of the sites corresponding to the pore openings are measured for each of the 20 selected sites. The average value of the measured diameters of the sites corresponding to the pore openings is calculated, and this average value is used as the average opening diameter of the pores on the surface side.

[0153] Then, 20 sites corresponding to pores were selected from the backside image, and the diameters of sites corresponding to the openings of the pores were measured for these 20 selected sites. The average of the measured diameters of the sites corresponding to the openings of the pores was calculated, and this average was used as the average opening diameter of the pores on the backside.

[0154] The center distance p between adjacent conductive pathways 22 is determined by further determining the center position of the conductive pathways (not shown) in the photographic image of the insulating substrate 20 obtained in the above manner. The distance between the center positions of adjacent conductive pathways is calculated at 10 locations. The average value is defined as the center distance p between adjacent conductive pathways 22. The center position is the center position of the region corresponding to the conductive pathway 22 in the photographic image. Known image analysis methods can be used to calculate the center position of the region in the photographic image.

[0155] <<Protrusion>>

[0156] The protrusion is a part of the conductive path and is columnar. From the viewpoint of increasing the contact area with the joined member, the protrusion is preferably columnar.

[0157] The length h of the protrusion 22a and the length h of the protrusion 22b in the thickness direction Dt of the insulating substrate 20 are preferably 2 nm to 6000 nm, more preferably 5 nm to 3000 nm. When the length h is 10 nm to 1000 nm, good bonding with the bonding member is possible.

[0158] The length h of the protrusion 22 a and the length h of the protrusion 22 b are based on the average surface of the surface 20 a of the insulating base material 20 .

[0159] If the length h of the protrusions 22a and 22b in the thickness direction Dt of the insulating substrate 20 is 2 nm to 6000 nm, the bumps on the object side can follow the bump height distribution well, and the height accuracy of the bump surface on the object side does not need to be required.

[0160] Regarding the length h of the protrusion 22a and the length h of the protrusion 22b, a field emission scanning electron microscope (FE-SEM) was used to obtain a photographic image at a magnification of 100,000 times of a cross section in the thickness direction Dt of the insulating substrate 20. In the photographic image, the line Lc on the front side of the insulating substrate and the line Lc on the back side of the insulating substrate were determined in the manner described above.

[0161] Next, ten protrusions 22a are selected from the photographic image. Points corresponding to the tops of the ten selected protrusions 22a are identified. For each of the ten protrusions 22a, the distance between the points corresponding to the tops of the identified protrusions 22a and the line Lc on the surface side of the insulating substrate in the thickness direction Dt of the insulating substrate 20 is calculated. The average of these distances for the points corresponding to the tops of the ten protrusions 22a is calculated. This average is defined as the length h of the protrusion 22a.

[0162] Then, ten protrusions 22b are selected from the photographic image. Points corresponding to the tops of the ten selected protrusions 22b are identified. For each of the ten protrusions 22b, the distance between the points corresponding to the tops of the ten selected protrusions 22b and the line Lc on the back side of the insulating substrate in the thickness direction Dt of the insulating substrate 20 is calculated. The average of these distances for the points corresponding to the tops of the ten protrusions 22b is calculated. This average is defined as the length h of the protrusion 22b.

[0163] When the diameter of the protrusion is d and the length of the protrusion in the thickness direction of the insulating substrate is h, the aspect ratio d / h is preferably 0.1 to 20. An aspect ratio d / h of 0.1 to 20 enables stable production and excellent bonding strength.

[0164] 〔Resin layer〕

[0165] As described above, the resin layer covers at least one of the front and back surfaces of the insulating substrate and protects the insulating substrate and the conductive path. For example, if the conductive path has a protruding portion, the resin layer embeds the protruding portion. In other words, the resin layer covers the end of the conductive path protruding from the insulating substrate and protects the protruding portion.

[0166] To achieve the above functions, the resin layer preferably exhibits fluidity in a temperature range of 50° C. to 200° C. and cures at a temperature of 200° C. or higher. The resin layer is, for example, a thermoplastic layer composed of a thermoplastic resin, and the resin layer will be described in detail later.

[0167] The average thickness hm of the resin layer 24 is preferably 10 μm or less, more preferably 5 μm or less, and even more preferably 1 μm or less. When the average thickness hm of the resin layer 24 is 10 μm or less, the protruding portion of the conductive path 22 can be fully protected and the surrounding area of ​​the filling electrode can be fully utilized when bonding to a connection object such as a semiconductor device.

[0168] The average thickness hm of the resin layer 24 is the average distance from the surface 20a of the insulating substrate 20 or the average distance from the back surface 20b of the insulating substrate 20. The average thickness hm of the resin layer 24 is determined by cutting the resin layer along the thickness direction Dt of the anisotropic conductive member 10 and taking a photographic image of the cut cross section using a scanning electron microscope. In the photographic image, the line Lc on the surface 20a side of the insulating substrate 20 and the line Lc on the back surface side of the insulating substrate are determined as described above.

[0169] Next, ten locations corresponding to the surface 24a of the resin layer 24 are selected from the photographic image. The distances between each of the ten selected locations and the line Lc on the surface 20a side of the insulating substrate 20 are calculated. The average of the distances at these ten locations is calculated. This average is defined as the average thickness hm of the resin layer 24 on the surface 20a side of the insulating substrate 20.

[0170] Similarly, for the resin layer on the back surface 20b side of the insulating substrate 20, ten locations corresponding to the surface 24a of the resin layer 24 are selected from the photographic image. The distances between each of the ten selected locations and the line Lc on the back surface 20b side of the insulating substrate 20 are calculated. The average value of the distances at these ten locations is calculated. This average value is defined as the average thickness hm of the resin layer 24 on the back surface 20b side of the insulating substrate 20.

[0171] The resin layer can also have the following composition. The composition of the resin layer is described below. For example, the resin layer contains a polymer material and may also contain an antioxidant material.

[0172] As the resin material constituting the resin layer, specifically, for example, thermoplastic resins such as ethylene copolymers, polyamide resins, polyester resins, polyurethane resins, polyolefin resins, acrylic resins, acrylonitrile resins and cellulose resins can be enumerated. As the resin material constituting the resin layer, polyacrylonitrile can also be used. As the resin material constituting the resin layer, epoxy resins, phenolic resins, polyimide resins, melamine resins, isocyanate resins etc. can be enumerated. Wherein, from the reason of further improving insulation reliability and excellent chemical resistance, it is preferred to use polyimide resins and / or epoxy resins.

[0173] As the resin layer, in addition to the above, for example, a material containing a main composition including an acrylic polymer, an acrylic monomer, and a maleimide compound as described in International Publication No. 2022 / 163260 can be used.

[0174] ((Member to be joined of anisotropic conductive member))

[0175] When anisotropically conductive components are used as electronic connectors, the components to be connected are, for example, semiconductor elements, electrodes, or components having element regions. Examples of components having electrodes include semiconductor elements that individually perform specific functions, but also include components where multiple elements are aggregated to perform specific functions. Furthermore, components that merely transmit electrical signals, such as wiring components, are also included, and printed wiring boards are also included in components having electrodes.

[0176] The component area is an area where various components that function as electronic components constitute circuits. The component area is, for example, an area where memory circuits such as flash memory are formed, logic circuits such as microprocessors and FPGAs (field-programmable gate arrays), and areas where communication modules such as wireless tags and wiring are formed. In addition, MEMS (Micro Electro Mechanical Systems) can also be formed in the component area. Examples of MEMS include sensors, actuators, and antennas. Examples of sensors include various sensors such as acceleration, sound, and light. Regarding light sensors, there is no particular limitation as long as they can detect light. For example, CCD (Charge Coupled Device) image sensors or CMOS (Complementary Metal Oxide Semiconductor) image sensors can be used.

[0177] As described above, components constituting a circuit are formed in the component region, and electrodes (not shown) are provided to electrically connect the semiconductor chip to the outside. The component region has an electrode region in which electrodes are formed. In addition, the electrodes in the component region are, for example, Cu columns. The electrode region basically refers to a region containing all the electrodes formed. However, if the electrodes are provided separately, the region in which each electrode is provided is also referred to as an electrode region.

[0178] The connection object may be in the form of a single-chip device such as a semiconductor chip, a semiconductor wafer, or a wiring layer.

[0179] Furthermore, the anisotropic conductive member is bonded to a connection object, but the connection object is not particularly limited to the semiconductor element, and for example, a semiconductor element in a wafer state, a semiconductor element in a chip state, a printed wiring board, a heat sink, etc. can be the connection object.

[0180] ((Semiconductor Components))

[0181] In addition to the above, semiconductor elements include logic LSI (Large Scale Integration) (for example, ASIC (Application Specific Integrated Circuit), FPGA (Field Programmable Gate Array), ASSP (Application Specific Standard Product), etc.), microprocessors (for example, CPU (Central Processing Unit), GPU (Graphics Processing Unit), etc.), memories (for example, DRAM (Dynamic Random Access Memory), HMC (Hybrid Memory Cube), MRAM (Magnetic RAM) and PCM (Phase-Change Memory), ReRAM (Resistive RAM), FeRAM (Ferroelectric RAM), flash memory (NAND (Not AND) flash), etc.), LED (Light Emitting Diode). Emitting Diode (LED), (e.g., micro flash memory for mobile terminals, automotive applications, projector light sources, LCD backlights, general lighting, etc.), power / devices, analog IC (Integrated Circuit), (e.g., DC (Direct Current)-DC (Direct Current) converters, insulated gate bipolar transistors (IGBTs), etc.), MEMS (Micro Electro Mechanical Systems), (e.g., acceleration sensors, pressure sensors, vibrators, gyroscope sensors, etc.), wireless (e.g.,GPS (Global Positioning System), FM (Frequency Modulation), NFC (Nearfield Communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), discrete components, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, CMOS (Complementary Metal Oxide Semiconductor), passive devices, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, RFIPD (Radio Frequency Integrated Passive Devices), BB (Broadband), etc.

[0182] For example, a single semiconductor element can be used to independently perform a specific function, such as a circuit or sensor. A semiconductor element can also function as an interposer. Furthermore, multiple devices, such as logic chips and memory chips with logic circuits, can be stacked on top of a device with an interposer function. Furthermore, this allows bonding even if the electrodes of the individual devices have different sizes.

[0183] (An Example of a Method for Manufacturing an Anisotropic Conductive Member)

[0184] Next, a method for manufacturing the anisotropic conductive member will be described. Figures 8 to 14 Schematic cross-sectional views showing an example of a method for manufacturing an anisotropic conductive component according to an embodiment of the present invention in order of steps. Figures 8 to 14 In, with Figures 1 to 3 Components having the same structure as the anisotropic conductive member 10 shown are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0185] In one example of a method for manufacturing an anisotropic conductive member, Figure 1The anisotropic conductive component 10 shown in FIG. 1 is described as an example in which the insulating base material 20 is composed of an aluminum anodic oxide film. To form the aluminum anodic oxide film, an aluminum substrate is used. Therefore, in one example of a method for manufacturing an anisotropic conductive component, first, as shown in FIG. Figure 8 As shown, an aluminum substrate 40 is prepared.

[0186] The aluminum substrate 40 is formed according to the anisotropic conductive component 10 (refer to Figure 1 ) of the insulating substrate 20 (reference Figure 1 The size and thickness are appropriately determined by the thickness of the substrate, the processing equipment, and the like. The aluminum substrate 40 is, for example, a plate having a circular outer shape. Furthermore, the substrate is not limited to aluminum; a metal substrate capable of forming an electrically insulating insulating film may also be used. Valve metals capable of forming an anodic oxide film through anodization may also be used.

[0187] Next, the surface 40a on one side of the aluminum substrate 40 (reference Figure 8 ) is anodized. Thus, the surface 40a of one side of the aluminum substrate 40 (reference Figure 8 ) is anodized, so that Figure 9 As shown, an anodized film 44 having a plurality of fine pores 21 extending in the thickness direction Dt of the aluminum substrate 40 is formed.

[0188] The anodic oxide film 44 is the insulating substrate 20 (refer to Figure 1 ).like Figure 9 As shown, a barrier layer 43 exists at the bottom of each pore 21. The above-mentioned anodizing step is referred to as an anodizing treatment step.

[0189] In the anodized film 44 having a plurality of pores 21, the barrier layer 43 is present at the bottom of each pore 21 as described above, but the barrier layer 43 is removed. Thus, an anodized film 44 having a plurality of pores 21 without the barrier layer 43 is obtained (see Figure 10 ) In addition, the process of removing the barrier layer 43 is referred to as a barrier layer removal process.

[0190] In the barrier layer removal step, an alkaline aqueous solution containing ions of a metal M1 having a higher hydrogen overvoltage than aluminum is used to remove the barrier layer 43 of the anodic oxide film 44 and simultaneously remove the bottom 42c of the pore 21 (see FIG. Figure 10 ) of the surface 42d (reference Figure 10 ) is formed on the metal layer 45a (reference Figure 10). Thus, the aluminum substrate 40 exposed in the pores 21 is covered with the metal layer 45a. As a result, when the pores 21 are filled with metal by electroplating, the electroplating is facilitated, and insufficient filling of the pores with metal can be prevented, and the pores 21 can be prevented from being left unfilled, thereby preventing the conductive paths 22 (see Figure 1 ) is poorly formed.

[0191] The alkaline aqueous solution containing the metal M1 ions may further contain an aluminum ion-containing compound (sodium aluminate, aluminum hydroxide, aluminum oxide, etc.). The content of the aluminum ion-containing compound is preferably 0.1 to 20 g / L, more preferably 0.3 to 12 g / L, and even more preferably 0.5 to 6 g / L, in terms of aluminum ions.

[0192] Next, electroplating is performed from the surface 44a of the anodic oxide film 44 having a plurality of pores 21 extending in the thickness direction Dt. In this case, the metal layer 45a can be used as an electrode for electrolytic plating. The metal 45b is used during electroplating to form a bottom 42c of the pores 21 (see FIG. Figure 10 ) of the surface 42d (reference Figure 10 ) is electroplated starting from the metal layer 45a on the substrate. Figure 11 As shown, metal 45b is filled inside the pores 21 of the anodized film 44 as a conductive material constituting the conductive path 22. By filling the pores 21 with metal 45b, the conductive path 22 having conductivity is formed. In addition, the metal layer 45a and the metal 45b are collectively referred to as the filled metal 45.

[0193] The process of filling the plurality of pores 21 of the anodized film 44 with metal 45b to form a plurality of conductive paths 22 is referred to as a metal filling process. As described above, the conductive paths 22 are composed of a conductive material and are not limited to the filled metal. In the metal filling process, electroplating can be used, and the metal filling process will be described in detail later. In addition, the surface 44a of the anodized film 44 is equivalent to one surface of the insulating substrate 20. The process of filling the plurality of pores 21 of the anodized film 44 with metal and a conductive material containing a substance other than metal to form a plurality of conductive paths 22 is referred to as a filling process.

[0194] After the metal filling process, Figure 11 The surface 44a of the anodized film 44 is polished to make it smooth. For example, a CMP (Chemical Mechanical Polishing) process can be used for polishing.

[0195] Then, after the polishing process, as Figure 12As shown, a portion of the surface 44a of the anodized film 44 on the side where the aluminum substrate 40 is not provided is removed along the thickness direction Dt, so that the metal 45 filled in the metal filling step is made to protrude further than the surface 44a of the anodized film 44. In other words, the conductive path 22 is made to protrude further than the surface 44a of the anodized film 44. In this way, the protruding portion 22a can be obtained. The step of making the conductive path 22 protrude further than the surface 44a of the anodized film 44 is referred to as a surface protruding step.

[0196] In addition, in the surface protrusion process, for example, a solution that does not dissolve the metal constituting the conductive path 22 but dissolves the anodic oxide film 44 is used to dissolve the surface 44a of the anodic oxide film 44. At this time, a spray etching method can be used in which the dissolved solution is made into droplets and sprayed onto the surface 44a of the anodic oxide film 44. In this way, a Figure 3 The surface 20a of the insulating substrate 20 is shown.

[0197] After the surface protrusion process, such as Figure 13 As shown, the aluminum substrate 40 is removed. The process of removing the aluminum substrate 40 is called a substrate removal process. In the case of a structure with only one protruding portion, Figure 13 The component in the state shown is an anisotropic conductive component 10. Figure 13 In the state shown, the resin layer 24 (refer to Figure 1 ) and set it as an anisotropic conductive component 10.

[0198] Then, if Figure 13 As shown, after the substrate removal step, a polishing step is performed to smoothen the surface of the anodized film 44 on the side where the aluminum substrate 40 is provided, that is, the back surface 44b of the anodized film 44. For example, a CMP process can be used for polishing.

[0199] Next, after the polishing process of the back surface 44b of the anodized film 44, as shown in FIG. Figure 14 As shown, a portion of the back surface 44b of the anodized film 44 is removed along the thickness direction Dt, so that the metal 45 filled in the metal filling step, that is, the conductive path 22, protrudes further than the back surface 44b of the anodized film 44. In this way, the protrusion 22b can be obtained. The process of making the conductive path 22 protrude further than the back surface 44b of the anodized film 44 is called the back surface protrusion step. In addition, the back surface protrusion step is not necessarily required. If the back surface protrusion step is not performed, the protrusion 22b is not formed.

[0200] In the back protrusion process, similarly to the surface protrusion process, a solution that does not dissolve the metal constituting the conductive path 22 but dissolves the anodic oxide film 44 is used to dissolve the back surface 44b of the anodic oxide film 44. In this case, a spray etching method can be used in which the dissolved solution is made into droplets and sprayed onto the back surface 44b of the anodic oxide film 44. In this way, the same as the surface protrusion process can be obtained. Figure 3 The insulating substrate 20 shown has a front surface 20a and a back surface 20b.

[0201] The above-mentioned surface protrusion step and back protrusion step may be a method comprising both steps, or may be a method comprising only one of the two steps. The surface protrusion step and back protrusion step correspond to the "protrusion step," and both the surface protrusion step and back protrusion step are protrusion steps. The protrusion step is also called a finishing step.

[0202] When the protrusion step is performed, the thickness of the anodized film 44 after the protrusion step is equal to the thickness of the insulating base material.

[0203] Then, if Figure 14 As shown, a resin layer 24 (see FIG. 2 ) is formed to cover the entire surface 44a of the anodic oxide film 44 where the protrusion 22a protrudes. Figure 1 ). Then, a resin layer 24 is formed to cover the entire back surface 44b of the anodized film 44 where the protrusion 22b protrudes (refer to Figure 1 ). Thus, manufacturing Figure 1 The anisotropic conductive component 10 is shown.

[0204] 〔Anodizing process〕

[0205] Anodic oxidation can be performed using conventionally known methods, but from the perspective of increasing the orderliness of the micropore arrangement and ensuring the anisotropic conductivity of the structure, a self-ordering method or a constant voltage treatment is preferably used. Thus, for example, the micropores and the conductor are arranged in a hexagonal shape.

[0206] Here, regarding the self-ordering method and constant pressure treatment of the anodic oxidation treatment, the same method as in paragraphs

[0056] to

[0108] and [ Figure 8 ] are the same as the processes described in .

[0207] 〔Maintaining process〕

[0208] When manufacturing an anisotropically conductive component, a holding step may be included. The holding step is a step in which, after the anodizing step, the material is held at a voltage of 95% to 105% of a holding voltage selected from a range of 1V to less than 30% of the voltage used in the anodizing step for a total of 5 minutes or more. In other words, the holding step is a step in which, after the anodizing step, electrolysis is performed at a voltage of 95% to 105% of a holding voltage selected from a range of 1V to less than 30% of the voltage used in the anodizing step for a total of 5 minutes or more.

[0209] Here, the “voltage during anodizing treatment” refers to the voltage applied between the aluminum substrate and the counter electrode. For example, if the electrolysis time during anodizing treatment is 30 minutes, it refers to the average value of the voltage maintained during 30 minutes.

[0210] From the perspective of controlling the thickness of the barrier layer to an appropriate thickness relative to the side wall thickness of the anodized film, i.e., the depth of the pores, the voltage in the holding step is preferably 5% to 25% of the voltage in the anodizing treatment, more preferably 5% to 20%.

[0211] Furthermore, from the perspective of further improving in-plane uniformity, the total holding time in the holding step is preferably 5 minutes to 20 minutes, more preferably 5 minutes to 15 minutes, and even more preferably 5 minutes to 10 minutes.

[0212] Furthermore, the holding time in the holding step may be 5 minutes or more in total, but is preferably 5 minutes or more continuously.

[0213] Moreover, the voltage in the holding process can be set to be continuously or stepwise reduced from the voltage in the anodizing treatment process to the voltage in the holding process, but from the perspective of further improving the in-plane uniformity, it is preferably set to a voltage of not less than 95% and not more than 105% of the above-mentioned holding voltage within 1 second after the end of the anodizing treatment process.

[0214] For example, by lowering the electrolysis potential at the end of the anodizing treatment step, the holding step can be performed continuously with the anodizing treatment step.

[0215] In the holding step, the same electrolyte solution and treatment conditions as those in the above-mentioned conventionally known anodizing treatment can be employed with respect to conditions other than the electrolytic potential.

[0216] In particular, when the holding step and the anodizing treatment step are performed continuously, it is preferable to perform the treatment using the same electrolyte solution.

[0217] In the anodic oxide film having a plurality of pores (micropores), as described above, a barrier layer (not shown) exists at the bottom of the pores, and a barrier layer removal step is provided for removing the barrier layer.

[0218] [Barrier layer removal process]

[0219] The barrier layer removal step is a step of removing the barrier layer of the anodized film using, for example, an alkaline aqueous solution containing ions of a metal M1 having a higher hydrogen overvoltage than aluminum.

[0220] The barrier layer is removed by the barrier layer removal step, and a conductive layer made of the metal M1 is formed at the bottom of the pore.

[0221] Here, hydrogen overvoltage refers to the voltage required to generate hydrogen. For example, the hydrogen overvoltage of aluminum (Al) is -1.66 V (Journal of the Chemical Society of Japan, 1982, (8), pp. 1305-1313). Examples of metals M1 having a higher hydrogen overvoltage than aluminum and their hydrogen overvoltage values ​​are shown below.

[0222] <Metal M1 and Hydrogen (1N H2SO4) Overvoltage>

[0223] Platinum (Pt): 0.00V

[0224] Gold (Au): 0.02V

[0225] Silver (Ag): 0.08V

[0226] Nickel (Ni): 0.21V

[0227] Copper (Cu): 0.23V

[0228] Tin (Sn): 0.53V

[0229] Zinc (Zn): 0.70V

[0230] In the barrier layer removal step, the barrier layer is removed using an alkaline aqueous solution containing ions of the metal M1, which has a higher hydrogen overvoltage than aluminum. This not only removes the barrier layer 43 but also forms a metal layer 45a of the metal M1, which is less susceptible to hydrogen generation than aluminum, on the aluminum substrate 40 exposed at the bottom of the pore 21. This results in improved in-plane uniformity of the metal filling. This is believed to be because hydrogen generation by the plating solution is suppressed, facilitating metal filling by electrolytic plating.

[0231] Furthermore, it was discovered that, in the barrier layer removal step, a holding step is provided, wherein the holding step is performed for a total of 5 minutes or more at a voltage selected from a range less than 30% of the voltage in the anodizing step (holding voltage), and an alkaline aqueous solution containing ions of the metal M1 is applied in combination, thereby significantly improving the uniformity of metal filling during the electroplating process. Therefore, the inclusion of the holding step is preferred.

[0232] Although the detailed mechanism is not yet clear, it is believed that this is because, in the barrier layer removal process, an alkaline aqueous solution containing ions of metal M1 is used to form a layer of metal M1 under the barrier layer, thereby suppressing damage to the interface between the aluminum substrate and the anodized film, thereby improving the uniformity of the dissolution of the barrier layer.

[0233] In the barrier layer removal step, a metal layer 45a made of metal (metal M1) is formed at the bottom of the fine hole 21. However, the present invention is not limited to this. Only the barrier layer 43 is removed to expose the aluminum substrate 40 at the bottom of the fine hole 21. When the aluminum substrate 40 is exposed, it can be used as an electrode for electrolytic plating.

[0234] The pores 21 can also be formed by expanding the micropores and removing the barrier layer. In this case, a pore enlargement treatment can be used to expand the micropores. The pore enlargement treatment is a treatment in which the anodic oxide film is immersed in an acidic aqueous solution or an alkaline aqueous solution to dissolve the anodic oxide film and expand the pore diameter of the micropores. In the pore enlargement treatment, an aqueous solution of an inorganic acid such as sulfuric acid, phosphoric acid, nitric acid, hydrochloric acid, or a mixture thereof, or an aqueous solution of sodium hydroxide, potassium hydroxide, or lithium hydroxide can be used.

[0235] In addition, the barrier layer at the bottom of the micropores can also be removed during the pore diameter expansion treatment. By using an aqueous sodium hydroxide solution in the pore diameter expansion treatment, the micropores are expanded and the barrier layer is removed.

[0236] 〔Filling process〕

[0237] The filling step involves filling the pores of an anodic oxide film (i.e., an insulating substrate) with a plurality of pores extending in the thickness direction with a conductive material to form a plurality of conductive pathways. The conductive pathways are, for example, columnar conductors. When metal is added during the filling step, this is referred to as the metal filling step.

[0238] <Metals used in the filling process>

[0239] In the filling step, in order to form a conductive path, the metal as the conductive material filled in the pores 21 of the anodized film 44 is preferably a metal having a resistivity of 10 3Specific examples of the metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), zinc (Zn), and cobalt (Co).

[0240] In addition, as a conductive material, from the viewpoint of conductivity and formation based on electroplating method, copper (Cu), gold (Au), aluminum (Al), nickel (Ni) and cobalt (Co) are preferred, copper (Cu) and gold (Au) are more preferred, and copper (Cu) is further preferred.

[0241] <Electroplating method>

[0242] As a plating method for filling the inside of the pores 21 of the anodized film 44 having the plurality of pores 21 extending in the thickness direction Dt with metal, for example, electrolytic plating or electroless plating can be used.

[0243] Here, in the conventional electrolytic plating method used in coloring, it is difficult to selectively deposit (grow) metal in the hole with high vertical and horizontal selectivity. This is because the deposited metal is consumed in the hole, and even if electrolysis is performed for a certain period of time or more, the plating will not grow.

[0244] Therefore, when metal is filled by electrolytic plating, a pause time must be set during pulse electrolysis or constant potential electrolysis. The pause time must be at least 10 seconds, preferably 30 to 60 seconds.

[0245] Furthermore, in order to promote stirring of the electrolyte solution, it is also preferable to apply ultrasonic waves.

[0246] And, electrolysis voltage is generally below 20V, is preferably below 10V, but preferably measures the precipitation potential of the target metal in the employed electrolytic solution in advance, carries out constant potential electrolysis in this current potential+1V.In addition, when carrying out constant potential electrolysis, preferably can and use cyclic voltammetry, can use the constant potential device of Solartron company, BAS Co., Ltd., HOKUTO DENKOCORPORATION, IVIUM company etc.

[0247] (Electroplating solution)

[0248] As the plating solution, a conventionally known plating solution can be used.

[0249] Specifically, when copper is precipitated, a copper sulfate aqueous solution is generally used, but the concentration of the copper sulfate is preferably 1 to 300 g / L, more preferably 100 to 200 g / L. Furthermore, the addition of hydrochloric acid to the electrolyte can promote precipitation. In this case, the hydrochloric acid concentration is preferably 10 to 20 g / L.

[0250] Furthermore, when gold is deposited, it is preferable to perform electroplating by alternating current electrolysis using a sulfuric acid solution of gold tetrachloride.

[0251] The plating solution preferably contains a surfactant.

[0252] As the surfactant, any known surfactant can be used. Sodium lauryl sulfate, which is known as a surfactant conventionally added to electroplating solutions, can also be used directly. The hydrophilic portion can be either ionic (cationic / anionic / amphoteric) or nonionic. However, cationic surfactants are preferred from the perspective of avoiding bubbles on the surface of the electroplated object. The concentration of the surfactant in the electroplating solution is preferably 1% by mass or less.

[0253] In addition, in the electroless plating method, it takes a long time to completely fill the pores consisting of vertically and horizontally tall pores with metal. Therefore, it is preferable to use the electrolytic plating method to fill the pores with metal.

[0254] [Substrate removal process]

[0255] The substrate removal step is a step of removing the aluminum substrate after the filling step. The method for removing the aluminum substrate is not particularly limited, and for example, a method of removing by dissolution can be preferably used.

[0256] <Dissolution of Aluminum Substrate>

[0257] Regarding the dissolution of the aluminum substrate, it is preferable to use a treatment liquid that hardly dissolves the anodized film but easily dissolves aluminum.

[0258] The dissolution rate of the aluminum by the treatment liquid is preferably 1 μm / minute or more, more preferably 3 μm / minute or more, and further preferably 5 μm / minute or more. Similarly, the dissolution rate of the anodized film is preferably 0.1 nm / minute or less, more preferably 0.05 nm / minute or less, and further preferably 0.01 nm / minute or less.

[0259] Specifically, the treatment liquid preferably contains at least one metal compound having a lower ionization tendency than aluminum and has a pH of 4 or less or 8 or more, more preferably 3 or less or 9 or more, and even more preferably 2 or less or 10 or more.

[0260] As a treatment liquid for dissolving aluminum, a compound obtained by mixing, for example, compounds of manganese, zinc, chromium, iron, cadmium, cobalt, nickel, tin, lead, antimony, bismuth, copper, mercury, silver, palladium, platinum, and gold (for example, chloroplatinic acid), their fluorides, their chlorides, etc., based on an acidic aqueous solution or an alkaline aqueous solution.

[0261] Among them, an acidic aqueous solution base is preferred, and mixed chlorides are preferred.

[0262] In particular, from the viewpoint of the treatment range, a treatment liquid in which mercuric chloride is mixed in a hydrochloric acid aqueous solution (hydrochloric acid / mercuric chloride) or a treatment liquid in which copper chloride is mixed in a hydrochloric acid aqueous solution (hydrochloric acid / copper chloride) is preferred.

[0263] The composition of the treatment liquid for dissolving aluminum is not particularly limited, and for example, a bromine / methanol mixture, a bromine / ethanol mixture, aqua regia, or the like can be used.

[0264] Furthermore, the concentration of the acid or alkali in the treatment liquid for dissolving aluminum is preferably 0.01 to 10 mol / L, more preferably 0.05 to 5 mol / L.

[0265] Furthermore, the treatment temperature using the treatment liquid in which aluminum is dissolved is preferably -10°C to 80°C, more preferably 0°C to 60°C.

[0266] Furthermore, the aluminum substrate is dissolved by contacting the aluminum substrate after the electroplating step with the treatment solution. The contact method is not particularly limited, and examples thereof include immersion and spraying. Immersion is preferred. The contact time is preferably 10 seconds to 5 hours, more preferably 1 minute to 3 hours.

[0267] Furthermore, when forming the anisotropic conductive component, a supporting substrate may be provided on the anodic oxide film 44. The supporting substrate preferably has the same outer shape as the anodic oxide film 44. Attaching the supporting substrate improves the handling of the anodic oxide film 44 when forming the anisotropic conductive component.

[0268] 〔Highlight process〕

[0269] The protruding step is a step of causing the conductive path to protrude from at least one of the one surface and the other surface of the insulating base material after the polishing step.

[0270] In a specific example, a portion of the anodized film 44 is removed. When removing a portion of the anodized film 44, for example, an acidic aqueous solution or an alkaline aqueous solution can be used that dissolves the anodized film 44, i.e., aluminum oxide (Al2O3), but does not dissolve the metal constituting the conductive path 22. The acidic aqueous solution or alkaline aqueous solution is formed into droplets and brought into contact with the anodized film 44 having the metal-filled pores 21, thereby removing a portion of the anodized film 44. As a method for forming the acidic aqueous solution or alkaline aqueous solution into droplets and bringing them into contact with the anodized film 44, a spray etching method can be used, in which the dissolved solution is formed into droplets as described above and sprayed onto the insulating substrate, i.e., the anodized film 44.

[0271] When using an acidic aqueous solution, an aqueous solution of an inorganic acid such as sulfuric acid, phosphoric acid, nitric acid, or hydrochloric acid, or a mixture thereof, is preferably used. Of these, aqueous solutions that do not contain chromic acid are preferred for safety reasons. The concentration of the acidic aqueous solution is preferably 1 to 10% by mass. The temperature of the acidic aqueous solution is preferably 25 to 60°C.

[0272] When using an alkaline aqueous solution, it is preferably an aqueous solution of at least one alkali selected from the group consisting of sodium hydroxide, potassium hydroxide, and lithium hydroxide. The concentration of the alkaline aqueous solution is preferably 0.1 to 5% by mass. The temperature of the alkaline aqueous solution is preferably 20 to 35°C.

[0273] Specifically, for example, a 50 g / L, 40°C phosphoric acid aqueous solution, a 0.5 g / L, 30°C sodium hydroxide aqueous solution, or a 0.5 g / L, 30°C potassium hydroxide aqueous solution can be preferably used.

[0274] The immersion time in the acidic or alkaline aqueous solution is preferably 8 to 120 minutes, more preferably 10 to 90 minutes, and even more preferably 15 to 60 minutes. When repeated immersion treatments of shorter duration are performed, the immersion time refers to the total of each immersion time. Washing may be performed between each immersion treatment.

[0275] Furthermore, regarding the extent to which the metal 45, i.e., the conductive path 22, protrudes beyond the surface 44a or the back surface 44b of the anodized film 44, as described above, the conductive path 22 preferably protrudes by 10 nm to 1000 nm beyond the surface 44a or the back surface 44b of the anodized film 44. Specifically, in order to achieve good bonding with the member to be bonded, the length h of the protrusion 22a in the thickness direction Dt is preferably 10 nm to 1000 nm, and more preferably 50 nm to 500 nm.

[0276] While strictly controlling the length h of the protruding portion of the conductive path 22 in the thickness direction Dt, it is preferred to fill the interior of the pore 21 with a conductive material such as metal, process the ends of the anodized film 44 and the conductive material such as metal into the same plane, and then selectively remove the insulating substrate such as the anodized film.

[0277] Furthermore, after the metal filling or after the protrusion step, a heat treatment may be performed in order to reduce the strain in the conductive path 22 caused by the metal filling.

[0278] From the perspective of suppressing metal oxidation, the heat treatment is preferably carried out in a reducing environment, specifically, preferably in an environment with an oxygen concentration of 20 Pa or less, and more preferably in a vacuum. Here, vacuum refers to a state in which at least one of the gas density and gas pressure is lower than that of the atmosphere.

[0279] Furthermore, the heat treatment is preferably performed while applying stress to the anodized film 44 for correction.

[0280] [Resin layer formation process]

[0281] The resin layer 18 can be formed using, for example, an inkjet method, a transfer method, a spray method, or a screen printing method. In the inkjet method, resin layer 18 is formed directly on insulating substrate 20, thereby simplifying the process of forming resin layer 18 and being preferred. Furthermore, resin layer 18 can be formed using, for example, a conventionally known surface protection tape application device and a laminator. Furthermore, in the resin layer formation process, the resin layer is formed over the entire surface of the insulating substrate. The resin material constituting resin layer 18 is as described above.

[0282] As a method for forming the resin layer 18, in addition to the above-mentioned method, the following method can also be cited: a resin composition containing the antioxidant material described later, a polymer material, a solvent (for example, methyl ethyl ketone, etc.) is applied to the entire surface of the insulating substrate and dried, and calcined as needed.

[0283] The coating method of the resin composition is not particularly limited, and conventionally known coating methods such as gravure coating, reverse coating, die coating, knife coating, roll coating, air knife coating, screen coating, rod coating, and curtain coating can be used.

[0284] The drying method after coating is not particularly limited, and examples thereof include heating at 0°C to 100°C for several seconds to several tens of minutes in the atmosphere, and heating at 0°C to 80°C for more than ten minutes to several hours under reduced pressure.

[0285] Furthermore, the calcination method after drying varies depending on the polymer material used and is not particularly limited. When a polyimide resin is used, for example, a treatment of heating at a temperature of 160°C to 240°C for 2 minutes to 60 minutes can be mentioned. When an epoxy resin is used, for example, a treatment of heating at a temperature of 30°C to 80°C for 2 minutes to 60 minutes can be mentioned.

[0286] The anisotropic conductive member and the bonded body of the present invention have been described in detail above, but the present invention is not limited to the above-described embodiments, and various improvements and modifications are possible without departing from the spirit of the present invention.

[0287] Example

[0288] The following examples are given to more specifically describe the features of the present invention. About the materials, reagents, amounts of substances and their ratios and operations shown in the following examples, as long as they do not depart from the purpose of the present invention, just can suitably change. Therefore, the scope of the present invention is not limited to the following examples.

[0289] In this example, joined bodies of Examples 1 to 12 and joined bodies of Comparative Examples 1 and 2 were produced. The dimensions and the like of the joined bodies of Examples 1 to 12 and Comparative Examples 1 and 2 are shown in Table 1 below.

[0290] The joint strength and the state of the protruding portion after joining were evaluated for the joints of Examples 1 to 12 and the joints of Comparative Examples 1 and 2. The evaluation results of the joint strength and the state of the protruding portion after joining are shown in Table 2 below.

[0291] Next, the bonding strength and the state of the protruding portion after bonding will be described.

[0292] (Evaluation of bonding strength)

[0293] Regarding the bonding strength, the Stellar 4000 bond tester (Nordson Advanced Techn o The shear strength of the bonded bodies of the TEG chip, the anisotropic conductive component, and the interposer of each Example and Comparative Example was measured and evaluated.

[0294] Regarding the bonding strength, the bonding strength value (MPa) per unit area of ​​the TEG chip was calculated based on the obtained breaking load. The bonding strength value was evaluated according to the evaluation criteria shown below. The evaluation results are shown in the bonding strength column of Table 2 below.

[0295] Evaluation Benchmarks

[0296] A: 10MPa≤bonding strength value

[0297] B: 3MPa≤bonding strength value<10MPa

[0298] C: Bonding strength value <3MPa

[0299] <Preparation of Joint for Evaluation>

[0300] A TEG chip (Test Element Group chip) with a Cu pad and an interposer were prepared. The insulating layer was SiN. The step difference between the insulating layer and the Cu pad surface was 1 μm. A TEG chip with a chip size of 8 mm square and an electrode area (copper pillar) ratio of 25% to the chip area was prepared. Since the interposer included lead wiring around it, a 10 mm square interposer was prepared. Anisotropic conductive components were 10 mm square.

[0301] In addition, during the bonding process, the TEG chip, anisotropic conductive components and intermediate layers were stacked in sequence, and temporary bonding was performed using a room temperature bonding device (WP-100 (model), manufactured by PMT CORPORATION) under the conditions of a temporary bonding step with a heating temperature of 80°C, a time of 1 minute and a pressure of 10 MPa.

[0302] Next, the provisionally bonded samples were pressed at a pressure of 10 MPa using a room temperature bonding apparatus (model number ), manufactured by PMT CORPORATION, and then formally bonded at a heating temperature of 140° C. for 10 seconds.

[0303] Next, the resin layer of the permanently bonded sample was cured under the conditions of a resin curing step of heating at 250° C. for 180 seconds and a pressure of 10 MPa, thereby producing a bonded body for evaluation.

[0304] A laminated body in which a TEG chip, an anisotropic conductive member, and an interposer are laminated in this order is referred to as a type 1 laminated structure.

[0305] In addition, the TEG chip, anisotropic conductive component, TEG chip, anisotropic conductive component and intermediate layer were stacked in sequence, and temporary bonding was performed using a room temperature bonding device (WP-100 (model), manufactured by PMT C0RPORATION) as described above, under the conditions of a temporary bonding step with a heating temperature of 80°C, a time of 1 minute and a pressure of 10 MPa.

[0306] Next, the provisionally bonded samples were pressed at a pressure of 10 MPa using a room temperature bonding apparatus (Model No. , manufactured by PMT CORPORATION), followed by final bonding at a heating temperature of 140°C for 10 seconds. The resin layer of the final bonded samples was then cured in a resin curing step at a heating temperature of 250°C for 180 seconds and a pressure of 10 MPa, thereby producing bonded products for evaluation.

[0307] A laminated body in which a TEG chip, an anisotropic conductive component, a TEG chip, an anisotropic conductive component, and an interposer are laminated in this order is referred to as a type 2 laminated structure.

[0308] (State of the protruding portion after joining)

[0309] The state of the protruding portion after joining will be described.

[0310] For the bonded bodies of the TEG chip, the anisotropic conductive member, and the interposer in each of the Examples and Comparative Examples, the anodic oxide film was cut in the thickness direction using a focused ion beam (FIB).

[0311] Next, a photographic image at a magnification of 100,000 times was acquired using a field emission scanning electron microscope (S-4800 (model) manufactured by Hitachi High-Technologies Corporation).

[0312] In the acquired photographic image, 100 locations corresponding to the protrusions were identified. For the 100 identified protrusions, the presence or absence of contact with adjacent protrusions was determined. For the 100 identified protrusions, the state of the protrusions after joining was evaluated based on the presence or absence of contact with adjacent protrusions according to the evaluation criteria shown below. The evaluation results are shown in the column "State of the protrusion after joining" in Table 1 below. In addition, the state of the protrusion after joining is an indicator for evaluating the degree of buckling of the protrusion.

[0313] Evaluation Benchmarks

[0314] A: Among 100 protrusions, the number of protrusions in contact with adjacent protrusions is 0

[0315] B: Among 100 protrusions, the number of protrusions in contact with adjacent protrusions is 1 or more and 10 or less

[0316] C: Among 100 protrusions, the number of protrusions in contact with adjacent protrusions is 11 or more

[0317] In addition, regarding the presence or absence of contact with the adjacent protrusion, it is determined that there is contact as long as there is partial contact with the adjacent protrusion.

[0318] Hereinafter, Examples 1 to 12 and Comparative Examples 1 and 2 will be described.

[0319] (Example 1)

[0320] The following describes the bonded body of Example 1. In Example 1, an anodic oxide film of aluminum was used on an insulating substrate.

[0321] [Structure]

[0322] <Production of aluminum substrate>

[0323] Molten metal was prepared using an aluminum alloy containing 0.06 mass% Si, 0.30 mass% Fe, 0.005 mass% Cu, 0.001 mass% Mn, 0.001 mass% Mg, 0.001 mass% Zn, and 0.03 mass% Ti, with the remainder being Al and inevitable impurities. After molten metal treatment and filtration, an ingot having a thickness of 500 mm and a width of 1200 mm was produced by a DC (Direct Chill) casting method.

[0324] Next, the surface was cut to an average thickness of 10 mm by a face cutting machine, and then soaked at 550° C. for about 5 hours and then cooled to 400° C. before being formed into a rolled sheet with a thickness of 2.7 mm using a hot rolling mill.

[0325] Then, after heat treatment at 500° C. using a continuous annealing machine, the aluminum substrate was finished by cold rolling to a thickness of 1.0 mm, thereby obtaining a JIS 1050 material aluminum substrate.

[0326] After forming the aluminum substrate into a wafer shape having a diameter of 200 mm (8 inches), the following processes were performed.

[0327] <Electrolytic polishing treatment>

[0328] The aluminum substrate was subjected to electrolytic polishing treatment using an electrolytic polishing liquid having the following composition under the conditions of a voltage of 25 V, a liquid temperature of 65° C., and a liquid flow rate of 3.0 m / min.

[0329] The cathode was a carbon electrode, and the power supply used was GP0110-30R (manufactured by TAKASAGO LTD.). The flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

[0330] (Electrolytic polishing liquid composition)

[0331] 85% by mass phosphoric acid (reagent manufactured by FUJIFILM Wako Pure Chemical Corporation) 660 mL

[0332] 160 mL of pure water

[0333] 150 mL of sulfuric acid

[0334] 30mL of ethylene glycol

[0335] <Anodizing Process>

[0336] Next, the aluminum substrate after the electrolytic polishing was subjected to an anodic oxidation treatment using a self-ordering method according to the procedure described in Japanese Patent Application Laid-Open No. 2007-204802.

[0337] The aluminum substrate after electrolytic polishing was subjected to a preliminary anodization treatment for 5 hours using an electrolyte solution of 0.50 mol / L oxalic acid at a voltage of 40 V, a liquid temperature of 16° C., and a liquid flow rate of 3.0 m / min.

[0338] Then, the aluminum substrate after the preliminary anodizing treatment was subjected to a film removal treatment by immersing it in a mixed aqueous solution of 0.2 mol / L chromic anhydride and 0.6 mol / L phosphoric acid (liquid temperature: 50° C.) for 12 hours.

[0339] Then, re-anodization treatment was performed for 10 hours using an electrolyte solution of 0.50 mol / L oxalic acid at a voltage of 40 V, a liquid temperature of 16° C., and a liquid flow rate of 3.0 m / min to obtain an anodic oxide film with a film thickness of 80 μm.

[0340] In both the pre-anodization and re-anodization treatments, a stainless steel electrode was used as the cathode, and a GP0110-30R (manufactured by Takasago Ltd.) was used as the power supply. Furthermore, a NeoCool BD36 (manufactured by Yamato Scientific Co., Ltd.) was used as the cooling device, and a twin stirrer PS-100 (manufactured by Tokyo Rikakikaico Ltd.) was used as the stirring and heating device. Furthermore, the flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

[0341] <Barrier layer removal process>

[0342] Next, electrolysis treatment (electrolytic removal treatment) was performed using the same treatment solution and treatment conditions as those for the above-mentioned anodizing treatment while continuously decreasing the voltage from 40 V to 0 V at a voltage decreasing rate of 0.2 V / sec.

[0343] Then, etching treatment (etching removal treatment) was performed by immersing in 5 mass % phosphoric acid at 30° C. for 30 minutes to remove the barrier layer located at the bottom of the micropores of the anodized film, thereby exposing aluminum through the micropores.

[0344] Here, the average opening diameter of the micropores present in the anodized film after the barrier layer removal process is 60 nm. In addition, regarding the average opening diameter, a surface image with a magnification of 50,000 times was obtained using a field emission scanning electron microscope (FE-SEM), and 50 sites equivalent to micropores were selected from the surface image. For the selected 50 sites equivalent to micropores, the diameter of the site equivalent to the opening was measured. The average value of the diameters of the sites equivalent to the micropore openings was calculated. This average value was set as the average opening diameter.

[0345] Furthermore, the average thickness of the anodized film after the barrier layer removal process is 80 μm. In addition, regarding the average thickness, the anodized film is cut along the thickness direction using a focused ion beam (FIB), and a cross-sectional image with a magnification of 50,000 times is obtained for its cross section using a field emission scanning electron microscope (FE-SEM). In the cross-sectional image, the length of the portion corresponding to the thickness of the anodized film is measured at 10 locations, and the average value of the lengths of the 10 locations measured is obtained. This average value is set as the average thickness of the anodized film after the barrier layer removal process.

[0346] In addition, the density of micropores in the anodic oxide film is about 100 million per mm 2 The density of micropores was measured and calculated by the method described in paragraphs

[0168] and

[0169] of Japanese Patent Application Laid-Open No. 2008-270158.

[0347] The ordered degree of the micropores in the anodic oxide film was 92%. The ordered degree was determined by using a field emission scanning electron microscope (FE-SEM) to obtain a surface image at a magnification of 20,000 times, and by using the method described in paragraphs

[0024] to

[0027] of Japanese Patent Application Laid-Open No. 2008-270158.

[0348] <Metal Filling Process>

[0349] Next, an electrolytic plating process was performed using the aluminum substrate as a cathode and platinum as a positive electrode.

[0350] Specifically, constant current electrolysis was performed using a copper electroplating solution having the composition shown below to produce a metal-filled microstructure in which the interiors of pores (micropores) were filled with copper to form conductive paths.

[0351] Here, regarding constant current electrolysis, a plating apparatus manufactured by YAMAMOTTO-MS CO., LTD. and a power supply (HZ-3000) manufactured by HOKUTO DENKO CORPORATION were used. Cyclic voltammetry was performed in the plating solution to confirm the deposition potential, and then treatment was performed under the conditions shown below.

[0352] (Copper plating solution composition and conditions)

[0353] Copper sulfate 100g / L

[0354] Sulfuric acid 50g / L

[0355] Hydrochloric acid 15g / L

[0356] Temperature 25℃

[0357] Current density 10A / dm 2

[0358] <Polishing process>

[0359] Next, the surface of the metal-filled microstructure filled with metal to form a conductive path was subjected to CMP treatment and polished 5 μm from the surface to smooth the surface. PNANERLITE-7000 manufactured by Fujimi Incorporated was used as the CMP slurry.

[0360] A field emission scanning electron microscope (FE-SEM) was used to observe the surface of the anodized film after filling the pores (micropores) with metal. The presence of metal-based sealing in 1000 micropores was observed, and the sealing rate (number of sealed micropores / 1000) was calculated, and the result was 96%.

[0361] In addition, the anodized film after the pores (micropores) were filled with metal was cut in the thickness direction using FIB, and a field emission scanning electron microscope (FE-SEM) was used to obtain a cross-sectional image of the cross section at a magnification of 50,000 times to confirm the interior of the pores (micropores). As a result, it was confirmed that the interior of the sealed pores (micropores) was completely filled with metal.

[0362] <Finishing process>

[0363] For the metal-filled microstructure after the polishing process, a spray etching method was used to spray a sodium hydroxide aqueous solution (concentration: 5% by mass, liquid temperature: 20°C) into droplets and sprayed onto the surface of the anodized film. Figure 3 ) is 100 nm, the amount of sodium oxide aqueous solution sprayed is adjusted to selectively dissolve the surface of the aluminum anodic oxide film, followed by water washing and drying, so that the copper column serving as the conductive path protrudes. As a result, the length h of the protrusion (reference Figure 1 ) is 1000nm.

[0364] As for the spray etching method, ADE-3000S (product name) manufactured by Actes Kyosan Inc. was used.

[0365] Regarding the arithmetic mean distance δ in the thickness direction on the surface side of the anodized film (refer to Figure 3 ), and was measured using photographic images in the above-mentioned manner.

[0366] <Substrate Removal Process>

[0367] Next, the aluminum substrate was dissolved and removed by immersing the substrate in a 20% by mass aqueous solution of mercuric chloride (mercuric chloride) at 20° C. for 3 hours, thereby producing a structure.

[0368] <Polishing process>

[0369] Next, the back surface of the anodic oxide film formed by removing the aluminum substrate of the structure was subjected to CMP treatment to smooth the metal-filled microstructure. PNANERLITE-7000 manufactured by Fujimi Incorporated was used as the CMP slurry.

[0370] <Finishing process>

[0371] After the polishing process, a sodium hydroxide aqueous solution (concentration: 5% by mass, liquid temperature: 20°C) was made into droplets and sprayed onto the back of the anodized film of the structure using a spray etching method. Figure 3 ) is 100 nm, the amount of sodium oxide aqueous solution sprayed is adjusted to selectively dissolve the surface of the aluminum anodic oxide film, followed by water washing and drying, so that the copper column serving as the conductive path protrudes. As a result, the length h of the protrusion (reference Figure 1 ) is 1000nm.

[0372] As for the spray etching method, ADE-3000S (product name) manufactured by Actes Kyosan Inc. was used.

[0373] The arithmetic mean distance δ in the thickness direction of the back surface side of the anodized film was measured using the photographic image in the above-mentioned manner.

[0374] <Resin Layer Formation Step>

[0375] With respect to the structure after the trimming step, resin layers were formed on the front and back surfaces of the anodic oxide film by the method described below, thereby producing an anisotropic conductive bonding member.

[0376] The resin layer was formed using a resin composition containing a non-conductive epoxy thermosetting resin (BST001A, curing temperature 150° C., manufactured by NAMICS CORPORATION) and diethylene glycol diethyl ether as a diluent, while adjusting the rotation speed of the spin coater to a thickness of 1.5 μm.

[0377] Next, the produced anisotropic conductive bonding member was cut into 10 mm square pieces. DAD3230 (product name) manufactured by DISCO Corporation was used for cutting the anisotropic conductive member.

[0378] The arithmetic mean distance δ is calculated as follows.

[0379] The produced anisotropic conductive member was cut using a focused ion beam (FIB) to expose a cross section in the thickness direction of the anodic oxide film serving as the insulating base material.

[0380] Next, a field emission scanning electron microscope (FE-SEM) was used to obtain a photographic image of a cross section in the thickness direction of the anodized film at a magnification of 150k.

[0381] In the photographic image, a reference point Pb (reference point Pb) is set at an arbitrary position on the back surface 20b side of the insulating substrate 20, which is located on the opposite side of the front surface 20a. Figure 3 ). A reference line Ls is set parallel to the direction x passing through the reference point Pb (reference Figure 3 ).

[0382] Next, in the photographic image, the top Pc (reference Figure 3 ) are selected from the points corresponding to the reference line Ls in descending order. Figure 3 ) corresponding to the points 10 contact portions Vc are selected in ascending order relative to the reference line Ls.

[0383] In the photographic image, the distance from the reference line Ls to each of the points corresponding to the selected 10 tops Pc is calculated. The average of the 10 distances between the points corresponding to the 10 tops Pc and the reference line Ls is calculated using the least squares method. The average value calculated using the least squares method is displayed as a dot in the photographic image. A line Lc (referenced to the direction x) parallel to the point passing through the average value of the tops Pc is calculated. Figure 3 ).

[0384] In the photographic image, the distance from the reference line Ls was calculated for each of the 10 points corresponding to the selected contact portions Vc. The average value of the 10 distances between the points corresponding to the 10 contact portions Vc and the reference line Ls was calculated using the least squares method. The average value calculated using the least squares method was displayed as a dot in the photographic image. A line Lb (reference line) parallel to the direction x passing through the point representing the average value of the contact portion Vc was calculated. Figure 3 ).

[0385] Next, the distance between the parallel line Lc and the parallel line Lb in the thickness direction Dt is determined to obtain the arithmetic mean distance δ.

[0386] (Example 2)

[0387] Compared with Example 1, Example 2 is different in that the arithmetic mean distance δ (reference Figure 3 ) were all 20 nm, and the amount of sodium oxide aqueous solution sprayed was adjusted to selectively dissolve the surface and back of the aluminum anodic oxide film. Other than this, the process was the same as in Example 1.

[0388] (Example 3)

[0389] Compared with Example 1, Example 3 is different in that the arithmetic mean distance δ (reference Figure 3 ) were all 60 nm, and the amount of sodium oxide aqueous solution sprayed was adjusted to selectively dissolve the surface and back of the aluminum anodic oxide film. Other than this, the process was the same as in Example 1.

[0390] (Example 4)

[0391] Compared with Example 1, Example 4 is different in that the arithmetic mean distance δ (reference Figure 3 The amount of sodium oxide aqueous solution sprayed was adjusted so that the surface and back surfaces of the aluminum anodic oxide film were selectively dissolved. The same procedures as in Example 1 were used in addition to these steps.

[0392] (Example 5)

[0393] Example 5 differs from Example 3 in that the resin is located on the CNP surface, but otherwise is the same as Example 2. The resin being located on the CNP surface refers to a state where epoxy resin is applied to the protrusions of the anisotropic conductive member.

[0394] (Example 6)

[0395] Compared with Example 3, Example 6 is different in that the resin is located on the electrode surface, and otherwise is the same as Example 2. The resin being located on the electrode surface refers to a state where epoxy resin is applied to the Cu pad surface of the TEG chip.

[0396] (Example 7)

[0397] Compared with Example 2, Example 7 is different in that the conductive path is made of Ni. Other than this, the method is the same as Example 2.

[0398] The conductive path was formed by electrolytic plating using a mixed solution of nickel sulfate / nickel chloride / boric acid = 300 / 60 / 40 (g / L) as the electrolyte, with the nickel electrode as the cathode and platinum as the positive electrode. During the electrolytic plating process, the electrolyte was kept at a temperature of 50°C and constant current electrolysis (5A / dm 2 ).

[0399] (Example 8)

[0400] Compared with Example 2, Example 8 is different in that the length h of the protrusion (reference Figure 1 ) is set to 10000nm, except for this, it is the same as Example 2.

[0401] (Example 9)

[0402] Compared with Example 2, Example 9 is different in that the length h of the protrusion (reference Figure 1 ) is set to 3nm, and other than this, it is the same as Example 2.

[0403] (Example 10)

[0404] Compared with Example 3, Example 10 is different in that the size of the TEG chip is set to 4 mm square. Other than this, it is the same as Example 3.

[0405] (Example 11)

[0406] Compared with Example 3, Example 11 is different in that the size of the anisotropic conductive member is set to 8 mm square. Other than this, the method is the same as Example 3.

[0407] (Example 12)

[0408] Compared with Example 3, Example 12 is different in that a type 2 stacking structure is used in which a TEG chip, an anisotropic conductive component, a TEG chip, an anisotropic conductive component and an intermediate layer are stacked in sequence, and the size of the anisotropic conductive component is set to 8 mm square. Other than this, it is the same as Example 3.

[0409] (Comparative Example 1)

[0410] Comparative Example 1 differs from Example 1 in that either of the aforementioned trimming steps was performed using an immersion method rather than a spray etching method. Furthermore, Comparative Example 1 differs in that the provisionally bonded samples were pressed at a pressure of 10 MPa using a room-temperature bonding apparatus (Model No. 500000, manufactured by PMT Corporation), followed by final bonding at a heating temperature of 120°C for 10 seconds. Other than these, the process was identical to Example 1.

[0411] In Comparative Example 1, the arithmetic mean distance δ in the thickness direction (reference Figure 3 ) is 1nm.

[0412] (Comparative Example 2)

[0413] Compared with Example 1, Comparative Example 2 is different in that the arithmetic mean distance δ (reference Figure 3 ) were all 250 nm, and the amount of sodium oxide aqueous solution sprayed was adjusted to selectively dissolve the surface and back of the aluminum anodic oxide film. Other than this, the process was the same as in Example 1.

[0414] [Table 1]

[0415]

[0416] [Table 2]

[0417]

[0418] As shown in Table 2, compared with Comparative Examples 1 and 2, Examples 1 to 12 had better bonding strength and the state of the protruding portion after bonding.

[0419] In Comparative Example 1, the arithmetic mean distance δ was short, the bonding strength was low, and there were many protrusions in contact with adjacent protrusions.

[0420] In Comparative Example 2, the arithmetic mean distance δ is long, and many protrusions are in contact with adjacent protrusions.

[0421] According to Examples 1 to 12, Examples 2, 3, 5, 6, 10, and 11 were more excellent in the bonding strength and the state of the protruding portion after bonding.

[0422] According to Examples 1 to 4, when the arithmetic mean distance δ was 20 to 100 nm, the bonding strength and the state of the protrusions after bonding were more excellent, and when the arithmetic mean distance δ was 20 to 60 nm, the bonding strength and the state of the protrusions after bonding were further excellent.

[0423] According to Example 2 and Example 7, when the conductive path is composed of Cu, the bonding strength and the state of the protruding portion after bonding are more excellent than when the conductive path is composed of Ni.

[0424] According to Examples 2, 8, and 9, Example 2 in which the protrusion was 300 nm in thickness had better bonding strength and a better state of the protrusion after bonding.

[0425] Explanation of symbols

[0426] 10-Anisotropic conductive component, 12, 13-Joint body, 18-Resin layer, 20-Insulating base material, 20a, 24a, 40a, 32a, 34a, 37a, 44a-Surface, 20b, 44b-Back surface, 20d-Concave portion, 21-Pores, 22-Conductive path, 22a, 22b-Protrusion, 22c-Side surface, 24-Resin layer, 30, 31-Semiconductor element, 32, 37-Element substrate, 33-Resin layer, 34, 35, 38-electrodes, 36, 39-insulating layer, 40-aluminum substrate, 42c-bottom, 42d-surface, 43-barrier layer, 44-anodized film, 45, 45b-metal, 45a-metal layer, Dt-thickness direction, Ls-reference line, Pb-reference point, Pc-top, Vc-contact part, d-average diameter, hm-average thickness, ht-thickness, p-center-to-center distance, x-direction, δ-arithmetic mean distance, w-interval.

Claims

1. An anisotropic conductive component comprising: Insulating substrate with electrical insulating properties; and a plurality of conductive paths penetrating the insulating base material in a thickness direction and provided in an electrically insulated state from one another and having protrusions protruding from at least one surface of the insulating base material; In a cross section of the insulating base material in the thickness direction, the surface of the insulating base material where the protruding portion of the conductive path protrudes has a plurality of tops and contact portions where each of the plurality of protruding portions contacts the insulating base material. An arithmetic mean distance between the plurality of contact portions and the plurality of top portions in the thickness direction is 2 nm to 200 nm.

2. The anisotropic conductive component according to claim 1, wherein The conductive path is composed of Cu, Au or Al.

3. The anisotropic conductive component according to claim 1, wherein When the diameter of the protrusion is d and the length of the protrusion in the thickness direction of the insulating base is h, d / h is 0.1 to 20.

4. The anisotropic conductive component according to any one of claims 1 to 3, wherein The length of the protrusion in the thickness direction of the insulating base material is 6 nm to 6000 nm.

5. A bonded body, which is formed by bonding an anisotropic conductive member and a bonded member. A resin is filled between the anisotropic conductive member and the member to be joined, The anisotropic conductive component has: Insulating substrate with electrical insulating properties; and a plurality of conductive paths penetrating the insulating base material in a thickness direction and provided in an electrically insulated state from one another and having protrusions protruding from at least one surface of the insulating base material; In a cross section of the insulating base material in the thickness direction, the surface of the insulating base material where the protruding portion of the conductive path protrudes has a plurality of tops and contact portions where each of the plurality of protruding portions contacts the insulating base material. An arithmetic mean distance between the plurality of contact portions and the plurality of top portions in the thickness direction is 2 nm to 200 nm. The junction body according to claim 5 , wherein The bonded member includes a metal layer and a resin layer, and the metal layer is exposed from the resin layer. The junction body according to claim 5 , wherein: The bonded member includes a plurality of the metal layers, and at least one of the plurality of metal layers has a different height. The junction body according to claim 6 , wherein The joined member has a joining surface provided with a plurality of metal layers, and an area of ​​the joining surface is wider than an area of ​​a surface of the anisotropic conductive member where the protruding portion protrudes.

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