Novel grid type template ultraviolet lithography processing method

Abstract

The invention relates to the field of semiconductor chip methods, and discloses a novel grid-type template ultraviolet lithography processing method, which is technically characterized in that a grid-type template with related patterns covers a substrate, and then photoresist is dropped above the grid-type template; and after the photoresist covers the whole grid type template and permeates into the pattern in the grid to be in contact with the substrate, performing blade coating along the upper part of the grid type template so as to scrape off the redundant photoresist on the grid. And finally, carrying out ultraviolet irradiation and heating, curing the photoresist, and stripping the grid type template. According to the technology, physical and chemical properties are combined, the standing wave effect of a conventional ultraviolet lithography technology is effectively solved, meanwhile, the photoresist column with the high longitudinal-width ratio can be prepared, and the cost is saved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor chips, and more particularly to a novel grid-type template ultraviolet photolithography processing method. Background Art

[0002] In the field of micro- and nanostructure fabrication, traditional UV lithography has long held a prominent position due to its mature process and relatively low cost. However, in actual operation, the standing wave effect remains a persistent problem, severely limiting the further development and application of this technology and significantly negatively impacting pattern clarity and fabrication efficiency.

[0003] Fluctuations in photoresist thickness caused by the standing wave effect can lead to jagged or wavy distortions at the edges of patterns. This distortion prevents the precise replication of the originally designed micro- and nano-patterns onto the substrate, resulting in dimensional deviations and irregular shapes. For example, in the fabrication of fine nanoscale line structures, the standing wave effect can cause line edges to become rough and uneven, making it difficult to maintain consistent spacing between adjacent lines, thereby reducing the resolution and clarity of the pattern. In integrated circuit manufacturing, reduced pattern clarity can directly impact chip performance and yield, leading to unstable electrical performance and even failures such as short circuits or open circuits.

[0004] The standing wave effect also poses numerous problems in terms of production efficiency. The standing wave effect complicates the exposure and development process of photoresist and makes it difficult to precisely control. To achieve ideal image quality, multiple exposure and development tests are often required, with process parameters such as exposure dose and development time constantly adjusted. This not only increases the complexity and operational difficulty of the process, but also significantly extends the preparation cycle and reduces production efficiency. Furthermore, image defects caused by the standing wave effect can prevent subsequent processing steps from proceeding normally, requiring rework or scrapping of a large number of samples, further increasing production costs and wasting resources.

[0005] When traditional ultraviolet lithography technology is used to prepare micro-nanostructures, the standing wave effect has become a key factor restricting the further development and application of this technology by affecting the image clarity and preparation efficiency. Summary of the Invention

[0006] The present invention provides a novel grid-type template ultraviolet photolithography processing method to solve the problems existing in the prior art.

[0007] To achieve the above-mentioned purpose, an embodiment of the present invention provides a novel grid-type template UV lithography processing method, comprising the following steps:

[0008] a. Select the desired graphic substrate;

[0009] b. Preparing a layer of curable liquid material for a grid template on a patterned substrate;

[0010] c. curing the curable liquid material;

[0011] d. The cured grid template is peeled off from the patterned substrate;

[0012] e. Thinning the stripped grid template;

[0013] f. The thinned grid template is fitted with the corresponding substrate;

[0014] g. Apply a layer of photoresist on one side of the grid template;

[0015] h. After all the photoresist has entered the mesh and is in contact with the substrate, scrape off the photoresist above the grid template;

[0016] i. UV irradiation and heating;

[0017] j. Finally, the template is peeled off from the substrate, leaving behind the photoresist pillars.

[0018] Preferably, the surface of the patterned substrate in step (a) is provided with glue columns, and the glue columns are larger than or equal to the photoresist columns to be prepared.

[0019] Preferably, the curable liquid material in step (b) is silica gel, polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA) and other materials with corresponding capabilities; the preparation method can be spin coating, spray coating, spin spray coating, or direct dripping.

[0020] Preferably, the thinning of the grid template in step (e) needs to be performed from the side without pattern, at least to the pattern end, to the desired thinning thickness.

[0021] Preferably, the substrate material in step (f) is glass, silicon wafer, sapphire, or silicon dioxide.

[0022] Preferably, the photoresist in step (g) can be a positive photoresist or a negative photoresist.

[0023] To achieve the above object, the present invention further provides a novel grid-type template UV lithography processing method, characterized in that it comprises the following steps:

[0024] a. Select a flat substrate for preparing a grid-type template;

[0025] b. preparing a corresponding pattern on a planar substrate;

[0026] c. Then etch the planar substrate;

[0027] d. etching the graphic portion of the planar substrate to the desired depth;

[0028] e. The flat substrate used to prepare the grid template is thinned;

[0029] f. The thinned grid template is fitted with the corresponding substrate;

[0030] g. Apply a layer of photoresist on one side of the grid template;

[0031] h. After all the photoresist has entered the mesh and is in contact with the substrate, scrape off the photoresist above the grid template;

[0032] i. UV irradiation and heating;

[0033] j. Finally, the template is peeled off from the substrate, leaving behind the photoresist pillars.

[0034] Preferably, the planar substrate in step (a) can be silicon, silicon dioxide, sapphire, glass-related inorganic materials or silica gel, polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA) organic materials; the substrate material in step (f) is glass, silicon wafer, sapphire, silicon dioxide.

[0035] Preferably, the preparation of the corresponding pattern described in step (b) can be carried out by laser direct writing, nanoimprint lithography, conventional ultraviolet lithography, or other grid template lithography techniques; the etching described in step (c) can be wet etching or dry etching.

[0036] Preferably, the etching depth in step (d) can be etched to the surface layer or etched through the entire substrate; the grid template thinning in step (e) needs to be thinned to at least the graphic end; the photoresist in step (g) can be either positive or negative.

[0037] Compared with the prior art, the present invention has the following advantages:

[0038] The present invention aims to solve the common standing wave effect problem in traditional ultraviolet lithography technology. On the one hand, it can prepare photoresist columns with high aspect ratio, and on the other hand, it can save lithography costs.

[0039] This technology introduces the step of covering the substrate with a grid template. By dripping photoresist on the template and then scraping it, the excess photoresist on the template is effectively eliminated, so that it only remains in the area where the template pattern is located.

[0040] This innovative method combines physical and chemical properties, incorporating UV irradiation and heating steps into the fabrication process to ensure the curing of the photoresist and ultimately release the grid-like template. By cleverly integrating multiple steps, this technique successfully overcomes the standing wave effect found in traditional techniques, providing an efficient and feasible approach for the precise fabrication of micro- and nanostructures.

[0041] Overall, this technology has excellent application prospects. It not only has broad application potential in the manufacture of microelectronic devices, but also can be promoted and applied in other fields of nanotechnology due to its high efficiency and low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 Schematic diagram of the process and structure of specific embodiment 1

[0043] Figure 2 Schematic diagram of the process and structure of specific embodiment 2 DETAILED DESCRIPTION

[0044] The embodiment of the present invention provides a novel grid-type template UV lithography processing method, comprising the following steps:

[0045] a. Select the desired graphic substrate;

[0046] b. Preparing a layer of curable liquid material for a grid template on a patterned substrate;

[0047] c. curing the curable liquid material;

[0048] d. The cured grid template is peeled off from the patterned substrate;

[0049] e. Thinning the stripped grid template;

[0050] f. The thinned grid template is fitted with the corresponding substrate;

[0051] g. Apply a layer of photoresist on one side of the grid template;

[0052] h. After all the photoresist has entered the mesh and is in contact with the substrate, scrape off the photoresist above the grid template;

[0053] i. UV irradiation and heating;

[0054] j. Finally, the template is peeled off from the substrate, leaving behind the photoresist pillars.

[0055] Wherein, the surface of the patterned substrate in step (a) is provided with glue columns, and the glue columns are larger than or equal to the photoresist columns to be prepared.

[0056] Among them, the curable liquid material described in step (b) is silica gel, polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA) and other materials with corresponding capabilities; the preparation method can be spin coating, spray coating, spin spray coating, and direct dripping method.

[0057] The thinning of the grid template in step (e) needs to be performed from the side without patterns, at least to the pattern end, to the desired thinning thickness.

[0058] Wherein, the substrate material described in step (f) is glass, silicon wafer, sapphire, or silicon dioxide.

[0059] The photoresist in step (g) can be either a positive photoresist or a negative photoresist.

[0060] The present invention also provides a novel grid-type template UV lithography processing method, which is characterized by comprising the following steps:

[0061] a. Select a flat substrate for preparing a grid-type template;

[0062] b. preparing a corresponding pattern on a planar substrate;

[0063] c. Then etch the planar substrate;

[0064] d. etching the graphic portion of the planar substrate to the desired depth;

[0065] e. The flat substrate used to prepare the grid template is thinned;

[0066] f. The thinned grid template is fitted with the corresponding substrate;

[0067] g. Apply a layer of photoresist on one side of the grid template;

[0068] h. After all the photoresist has entered the mesh and is in contact with the substrate, scrape off the photoresist above the grid template;

[0069] i. UV irradiation and heating;

[0070] j. Finally, the template is peeled off from the substrate, leaving behind the photoresist pillars.

[0071] Among them, the planar substrate described in step (a) can be silicon, silicon dioxide, sapphire, glass-related inorganic materials or silica gel, polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA) organic materials; the substrate material described in step (f) is glass, silicon wafer, sapphire, silicon dioxide.

[0072] The preparation of the corresponding pattern in step (b) can be carried out by laser direct writing, nanoimprint lithography, conventional ultraviolet lithography, or other grid template lithography techniques; the etching in step (c) can be wet etching or dry etching.

[0073] The etching depth in step (d) can be to the surface layer or to the entire substrate; the thinning of the grid template in step (e) needs to be at least thinned to the graphic end; the photoresist in step (g) can be either positive or negative.

[0074] The above method can, on the one hand, prepare photoresist columns with high aspect ratios, and on the other hand, save photolithography costs. Specific embodiment 1:

[0076] like Figure 1 As shown, a novel inverted extrusion nanoimprint lithography method comprises the following steps:

[0077] 1. Select the desired graphic substrate;

[0078] 2. Prepare a layer of silicone on the patterned substrate;

[0079] 3. Heat and cure the silicone;

[0080] 4. The cured silicone is peeled off from the patterned substrate;

[0081] 5. Thin the peeled silicone;

[0082] 6. The thinned silicone is bonded to the corresponding substrate;

[0083] 7. Apply a layer of photoresist on the side with silicone;

[0084] 8. After the photoresist has completely entered the grid and is in contact with the substrate, scrape off the photoresist on the silicone template;

[0085] 9. Heat and UV irradiate the photoresist;

[0086] 10. Finally, peel the silicone off the substrate, leaving the photoresist column. Specific embodiment 2:

[0088] like Figure 2 As shown, a novel inverted extrusion nanoimprint lithography method comprises the following steps:

[0089] 1. Select a planar silicon dioxide substrate;

[0090] 2. Spin-coat a layer of photoresist on a planar substrate and perform photolithography;

[0091] 3. Then perform ICP etching on the silicon dioxide substrate;

[0092] 4. Etch the pattern of the silicon dioxide substrate to the required depth;

[0093] 5. Thinning a layer of the silicon dioxide substrate plane;

[0094] 6. The thinned silicon dioxide is bonded to the target substrate;

[0095] 7. Apply a layer of photoresist on one side of the silicon dioxide;

[0096] 8. After the photoresist has completely entered the grid and is in contact with the target substrate, scrape off the photoresist on the grid template;

[0097] 9. Heat and UV irradiate the photoresist;

[0098] 10. Finally, the template is peeled off from the substrate, leaving the photoresist column.

Claims

1. A novel grid-type template UV lithography processing method, characterized in that: The following steps are involved: a. Select the desired graphic substrate; b. Preparing a layer of curable liquid material for a grid template on a patterned substrate; c. curing the curable liquid material; d. The cured grid template is peeled off from the patterned substrate; e. Thinning the stripped grid template; f. The thinned grid template is fitted with the corresponding substrate; g. Apply a layer of photoresist on one side of the grid template; h. After all the photoresist has entered the mesh and is in contact with the substrate, scrape off the photoresist above the grid template; i. UV irradiation and heating; j. Finally, the template is peeled off from the substrate, leaving behind the photoresist pillars.

2. The novel grid-type template UV lithography processing method according to claim 1, characterized in that: The surface of the patterned substrate in step (a) is provided with glue columns, which are larger than or equal to the photoresist columns to be prepared.

3. The novel grid-type template UV lithography processing method according to claim 1, characterized in that: The curable liquid material described in step (b) is silica gel, polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA) and other materials with corresponding capabilities; the preparation method can be spin coating, spray coating, spin spray coating, or direct dripping.

4. The novel grid-type template UV lithography processing method according to claim 1, characterized in that: The thinning of the grid template described in step (e) needs to be performed from the side without pattern, at least to the pattern end, to the desired thinning thickness.

5. The novel grid-type template UV lithography processing method according to claim 1, characterized in that: The substrate material in step (f) is glass, silicon wafer, sapphire, or silicon dioxide.

6. The novel grid-type template UV lithography processing method according to claim 1, characterized in that: The photoresist in step (g) can be a positive photoresist or a negative photoresist.

7. A novel grid-type template UV lithography method, characterized in that: The following steps are involved: a. Select a flat substrate for preparing a grid-type template; b. preparing a corresponding pattern on a planar substrate; c. Then etch the planar substrate; d. etching the graphic portion of the planar substrate to the desired depth; e. The flat substrate used to prepare the grid template is thinned; f. The thinned grid template is fitted with the corresponding substrate; g. Apply a layer of photoresist on one side of the grid template; h. After all the photoresist has entered the mesh and is in contact with the substrate, scrape off the photoresist above the grid template; i. UV irradiation and heating; j. Finally, the template is peeled off from the substrate, leaving behind the photoresist pillars.

8. The novel grid-type template UV photolithography processing method according to claim 7, characterized in that: The planar substrate in step (a) can be silicon, silicon dioxide, sapphire, glass-related inorganic materials or silica gel, polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA) organic materials; the substrate material in step (f) is glass, silicon wafer, sapphire, silicon dioxide.

9. The novel grid-type template UV photolithography processing method according to claim 7, characterized in that: The preparation of the corresponding pattern described in step (b) can be carried out by laser direct writing, nanoimprint lithography, conventional ultraviolet lithography, or other grid template lithography techniques; the etching described in step (c) can be wet etching or dry etching.

10. The novel grid-type template UV lithography processing method according to claim 7, characterized in that: The etching depth in step (d) can be to the surface layer or to the entire substrate; the thinning of the grid template in step (e) needs to be thinned to at least the pattern end; the photoresist in step (g) can be either positive or negative.

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