Word line grouping method, electronic equipment and storage medium

Abstract

The invention discloses a word line grouping method, electronic equipment and a storage medium. The word line grouping method comprises the following steps: acquiring voltage distribution data corresponding to a storage unit of each word line in different voltage states; splicing the voltage distribution data in all the voltage states, and determining a target overlapping region between the voltage distribution data in adjacent voltage states; determining the threshold voltage of the default read voltage of each word line in different voltage states based on the target overlapping region; and based on the threshold voltage of the default read voltage of each word line in different voltage states, grouping the word lines by using a clustering algorithm. By means of the word line grouping method, grouping operation on the word lines can be automatically achieved, the grouping time is short, the grouping efficiency is high, and the cost is low.

Description

Technical Field

[0001] The present application relates to the technical field of storage devices, and in particular to a word line grouping method, an electronic device, and a storage medium. Background Art

[0002] The data retention capacity of NAND flash memory is affected by the number of erase / write cycles, data retention time, and read disturb. In actual use, it is necessary to determine the distance between the optimal read voltage and the default read voltage to calculate the read voltage offset and minimize the bit error rate. Therefore, it is necessary to calibrate the default read voltage and group word lines so that word lines within a group have similar default read voltages.

[0003] The word line grouping method in the related art requires controlling variable testing of three factors: the number of erase and write times, data retention time, and read interference, and then mixing different factors for testing. Finally, the changing trends of all word lines under various test conditions are counted, and word lines with the same changing trends are manually summarized into a group.

[0004] In other words, the relevant technology requires extensive experimentation, followed by manual evaluation of the experimental results, and manually grouping word lines with similar results. As semiconductor technology advances, the number of word lines in NAND flash memory will continue to increase, making the entire testing and calibration process time-consuming and labor-intensive. Summary of the Invention

[0005] The present application provides a word line grouping method, electronic device and storage medium, which can automatically implement word line grouping operations with short grouping time, high grouping efficiency and low cost.

[0006] In order to solve the above technical problems, the present application provides a word line grouping method on the one hand, including: obtaining voltage distribution data corresponding to storage cells of each word line under different voltage states; splicing the voltage distribution data under all voltage states to determine the target overlapping area between the voltage distribution data under adjacent voltage states; determining the threshold voltage of the default read voltage of each word line under different voltage states based on the target overlapping area; and grouping the word lines using a clustering algorithm based on the threshold voltage of the default read voltage of each word line under different voltage states.

[0007] In some embodiments, obtaining voltage distribution data corresponding to storage cells of each word line under different voltage states includes: reading all storage cells corresponding to the word line through multiple different read voltages to determine the voltage states of all storage cells under the corresponding read voltages; and determining the voltage distribution data corresponding to storage cells of each word line under different voltage states based on the read voltage and the voltage state.

[0008] In some embodiments, the voltage distribution data under all voltage states are spliced ​​to determine the target overlapping area between the voltage distribution data under adjacent voltage states, including: integrating the voltage distribution data under all voltage states into the same coordinate system; and determining the target overlapping area between the voltage distribution data under adjacent voltage states based on the coordinate system.

[0009] In some embodiments, adjacent voltage states include the i-th voltage state and the i+1-th voltage state; based on the coordinate system, a target overlapping area between the voltage distribution data in adjacent voltage states is determined, including: collecting voltage distribution data of a first array length along the coordinate system based on the default read voltage of the i-th voltage state; and collecting voltage distribution data of a second array length along the coordinate system based on the default read voltage of the i+1-th voltage state; wherein the first array length intersects with the second array length on the coordinate system; and determining a target overlapping area between the voltage distribution data of the first array length and the voltage distribution data of the second array length.

[0010] In some embodiments, determining the target overlapping area between the voltage distribution data of the first array length and the voltage distribution data of the second array length includes: starting from array subscript 1 of the first array, using each array subscript of the first array as a splicing starting point to determine the initial overlapping area with the second array, and obtaining multiple initial overlapping areas; calculating the total error of the one-to-one corresponding voltage distribution data between the first array and the second array in each initial overlapping area; and determining the initial overlapping area corresponding to the minimum total error as the target overlapping area.

[0011] In some embodiments, determining the default read voltage threshold voltage of each word line in different voltage states based on the target overlapping area includes: determining the voltage data corresponding to the first array subscript in the overlapping area as the default read voltage threshold voltage of the i-th voltage state.

[0012] In some embodiments, a clustering algorithm is used to group word lines based on the threshold voltage of the default read voltage of each word line in different voltage states, including: selecting the threshold voltage of the default read voltage of a preset number of word lines in different voltage states from multiple word lines as cluster centers; grouping the remaining word lines according to the cluster centers to obtain a number of cluster clusters; re-determining a new cluster center from each cluster, and iteratively grouping the remaining word lines according to the cluster centers to obtain a number of cluster clusters until the preset conditions are met and the word lines are grouped.

[0013] In some embodiments, the preset condition includes that the clustering error is less than a set value of the clustering error, or the number of iterations exceeds a maximum number of iterations.

[0014] In order to solve the above technical problems, the present application provides an electronic device on the other hand, which includes a processor and a memory, the memory is used to store computer programs, and the processor is used to execute the computer programs to implement the above word line grouping method.

[0015] In order to solve the above technical problems, the present application provides a computer-readable storage medium on the other hand, wherein the computer-readable storage medium stores a computer program, and the computer program is used to implement the above word line grouping method when executed by a processor.

[0016] The wordline grouping method provided in some embodiments of the present application obtains voltage distribution data corresponding to storage cells in each wordline under different voltage states; concatenates the voltage distribution data under all voltage states to determine a target overlap region between the voltage distribution data under adjacent voltage states; determines the default read voltage threshold voltage for each wordline under different voltage states based on the target overlap region; and groups the wordlines using a clustering algorithm based on the default read voltage threshold voltage for each wordline under different voltage states. This wordline grouping method can adaptively complete wordline grouping operations, with short grouping time, high grouping efficiency, and low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without inventive efforts. Among them:

[0018] Figure 1 is a flowchart of a word line grouping method in some embodiments of the present application;

[0019] Figure 2 is a turn-on voltage distribution curve of a memory cell in different voltage states of a word line in some embodiments of the present application;

[0020] Figure 3 is an execution flow chart of the K-means clustering algorithm in some embodiments of the present application;

[0021] Figure 4 is a flowchart of a word line grouping method in some embodiments of the present application;

[0022] Figure 5 is a schematic diagram of an electronic device in some embodiments of the present application;

[0023] Figure 6 is a schematic diagram of a computer-readable storage medium in some embodiments of the present application. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0025] See also Figure 1 , Figure 1 FIG. 1 is a flow chart of a word line grouping method in some embodiments of the present application. The word line grouping method includes:

[0026] Step 11: Obtain voltage distribution data corresponding to memory cells in each word line under different voltage states.

[0027] Each storage device includes multiple storage blocks, each of which includes several storage cells, with one storage cell corresponding to one word line. The storage device may be a NAND flash memory, which stores data by controlling the charge in each storage cell. Storage cells with different charge levels require different turn-on voltages. A read voltage is applied to determine whether a storage cell is on. The on / off state of the storage cell determines the voltage state of the storage cell, and further, the information stored in the storage cell is determined based on the voltage state of the storage cell.

[0028] In some embodiments, all memory cells corresponding to a word line are read using multiple different read voltages to determine the voltage states of all memory cells under the corresponding read voltages, and then based on the read voltages and the voltage states, the voltage distribution data (i.e., the distribution data of the turn-on voltage) corresponding to the memory cells of each word line under different voltage states is determined.

[0029] Step 12: Splice the voltage distribution data under all voltage states to determine the target overlapping area between the voltage distribution data under adjacent voltage states.

[0030] It's understandable that various types of electrical noise in memory cells can cause the amount of charge stored in the memory cells to shift, thereby changing the memory cell's threshold voltage. When the electrical noise is high, the threshold voltages of different voltage states can overlap, leading to read data errors. Different read voltages produce different numbers of data errors, so it's necessary to determine an appropriate read voltage to reduce the number of data errors. This can be done based on voltage distribution data.

[0031] In some embodiments, the voltage distribution data under all voltage states are integrated into the same coordinate system, and then based on the coordinate system, the target overlapping area between the voltage distribution data under adjacent voltage states is determined.

[0032] In an application scenario, such as Figure 2 As shown, Figure 2 This is a curve showing the threshold voltage distribution of memory cells in different voltage states for a word line in some embodiments of the present application. The horizontal axis represents the threshold voltage of the memory cell, and the vertical axis represents the number of memory cells corresponding to the threshold voltage. It is understood that due to the passage of storage time, electrons may be lost from the floating gate (FG) or trap gate (Trap Gate) of the memory cell, causing the corresponding threshold voltage to decrease, and the threshold voltages corresponding to the read voltages in different voltage states to overlap.

[0033] In some embodiments, adjacent voltage states include the i-th voltage state and the i+1-th voltage state. At this time, voltage distribution data of the first array length can be collected along the coordinate system based on the default read voltage of the i-th voltage state; and voltage distribution data of the second array length can be collected along the coordinate system based on the default read voltage of the i+1-th voltage state; wherein the first array length intersects with the second array length on the coordinate system; and the target overlapping area of ​​the voltage distribution data of the first array length and the voltage distribution data of the second array length is determined.

[0034] For example, the i-th voltage state corresponds to the 1st voltage state, the i+1-th voltage state corresponds to the 2nd voltage state, the i+2-th voltage state corresponds to the 3rd voltage state, and the threshold voltage of the default read voltage corresponding to the 1st voltage state corresponds to Figure 2 The threshold voltage of the default read voltage corresponding to the RL1 of the second voltage state corresponds to Figure 2 The threshold voltage of the default read voltage corresponding to the RL2 and the third voltage state shown corresponds to Figure 2 The voltage distribution data of RL3 in the first voltage state corresponds to Figure 2 The voltage distribution data of L1 and the second voltage state corresponds to Figure 2 The voltage distribution data under the L2 and 3 voltage states shown corresponds to Figure 2L3 is shown; wherein, the values ​​of RL1, RL2, and RL3 are unknown, but RL1, RL2, and RL3 can be moved on the turn-on voltage distribution curve within a range of plus or minus 127 decks. Depending on the signal difference of the NAND flash memory, 1 deck = 10mv (millivolts) or 20mv. Specifically, by moving RL1 from left to right and recording the turn-on voltage distribution data that RL1 passes through, it can be understood that as the turn-on voltage increases, the number of memory cells will decrease accordingly. When the number of memory cells approaches 0, it can be determined that the voltage distribution data corresponding to the first voltage state is basically over. When RL1 continues to move to the right and exceeds RL2, it can be determined that the voltage distribution data corresponding to the second voltage state is basically over. Based on this, it can be determined that the entire curve of L1 and a portion of the curve of L2 are sampled. Similarly, by moving RL2 from left to right and recording the turn-on voltage distribution data that RL2 passes through, the entire curve of L2 and a portion of the curve of L3 can be sampled. It can be understood that the latter part of the data recorded by mobile RL1 is similar to the former part of the data recorded by mobile RL2, and a target overlapping area between the two can be determined.

[0035] In some embodiments, starting from array subscript 1 of the first array, each array subscript of the first array can be used as a splicing starting point to determine the initial overlapping area with the second array, thereby obtaining multiple initial overlapping areas; within each initial overlapping area, the total error of the voltage distribution data corresponding one to one between the first array and the second array is calculated; and the initial overlapping area corresponding to the minimum total error is determined as the target overlapping area.

[0036] The element corresponding to each array subscript in the first array is voltage distribution data. That is, as the voltage distribution data is collected from left to right, the array subscripts are aligned accordingly. That is, the voltage distribution data collected first has a smaller array subscript. In other words, the voltage distribution data is written to the array in the order in which it was collected. The element corresponding to each array subscript in the second array is voltage distribution data.

[0037] Here, for example, the first array is A, with an array length of n, and the second array is B, with an array length of n. If there is overlap between the arrays, then A[x]-A[n-1] of the first array overlaps with B[0]-B[nx-1] of the second array. Therefore, the distance between the voltage distribution data of the first array and the voltage distribution data of the second array is x, that is, the distance between the default read voltage of the i-th voltage state and the default read voltage of the i+1-th voltage state is x.

[0038] Based on this, a traversal algorithm can be used to determine the voltage distribution data of the corresponding elements in the first array and the voltage distribution data of the corresponding elements in the second array when the value of x is [1, n-2]. Then, the total error of the voltage distribution data corresponding to the overlapping areas of the first and second arrays is calculated to determine the overlapping area corresponding to the minimum total error as the target overlapping area. It is worth noting that when the length of the first array and the length of the second array are the same, such as n, the value range of x is [1, n-2], that is, at least two elements in the first array and at least two elements in the second array overlap.

[0039] For example, the corresponding voltage distribution data in the first array includes {11, 12, 13, 14, 14}, and the corresponding voltage distribution data in the second array includes {10, 12, 10, 13, 13}. The value range of x is [1, 3]. When x=1, {12, 13, 14, 14} in the first array overlap with {10, 12, 10, 13} in the second array, and the total error is equal to "(12-10)+(13-12)+(14-10)+(14-13)=8"; when x=2, {13, 14, 14} in the first array overlap with {10, 12, 10} in the second array, and the total error is equal to "(13-10)+(14-12)+(14-10)=9"; when x=3, {14, 14} in the first array overlap with {10, 12} in the second array, and the total error is equal to "(14-10)+(14-12)=6". Based on this, it can be determined that the overlapping area corresponding to x=3 is the target overlapping area.

[0040] In other embodiments, the total error can be averaged according to the number of overlaps to obtain an average error, and the initial overlap region corresponding to the minimum average error can be determined as the target overlap region. For example, the corresponding voltage distribution data in the first array includes {11, 12, 13, 14, 14}, and the corresponding voltage distribution data in the second array includes {10, 12, 10, 13, 13}. The value range of x is [1, 3]. When x=1, {12, 13, 14, 14} in the first array overlaps with {10, 12, 10, 13} in the second array, and the total error is equal to "(12-10)+(13-12)+(14-10)+(14-13)=8", and the average error is equal to "8 / 4=2"; when x=2, {13, 14, 14} in the first array overlaps with {10, 12, 10} in the second array, and the total error is equal to "(13-10)+(14-12)+(14-10)=9", and the average error is equal to "9 / 3=3"; when x=3, {14, 14} in the first array overlaps with {10, 12} in the second array, and the total error is equal to "(14-10)+(14-12)=6", and the average error is equal to "6 / 2=3". Based on this, it can be determined that the overlapping area corresponding to x=1 is the target overlapping area.

[0041] Step 13: Determine the threshold voltage of the default read voltage of each word line in different voltage states based on the target overlap area.

[0042] In some embodiments, the voltage data corresponding to the first array index in the overlapping region is determined as the threshold voltage of the default read voltage of the i-th voltage state.

[0043] It can be understood that the first array includes several turn-on voltages, the second array includes several turn-on voltages, the turn-on voltages correspond to the array subscripts one-to-one, and the corresponding turn-on voltage can be determined according to the array subscripts.

[0044] In an application scenario, such as Figure 2 As shown, the i-th voltage state corresponds to the 1st voltage state, and the threshold voltage of the default read voltage corresponding to the 1st voltage state corresponds to Figure 2 As shown in FIG. 1 , the threshold voltage of the default read voltage of RL1 is set to 0. By determining the distance x between the first array and the second array, the threshold voltage of the default read voltage of the second voltage state can be determined, and then the other voltage states (such as RL2 to RL7, where Figure 2 The threshold voltages of the default read voltages under RL4 to RL7 are not shown.

[0045] Step 14: Group the word lines using a clustering algorithm based on the threshold voltage of the default read voltage of each word line in different voltage states.

[0046] In some embodiments, the clustering algorithm can be a K-means clustering algorithm, a Mean-Shift clustering algorithm, a Density-Based Spatial Clustering of Applications with Noise (DBSCAN), an Expectation-Maximization (EM) clustering algorithm using a Gaussian Mixture Model (GMM), an agglomerative hierarchical clustering algorithm, or others, without limitation here.

[0047] In some embodiments, a preset number of word lines with threshold voltages of default read voltages in different voltage states can be selected from multiple word lines as cluster centers; the remaining word lines are grouped according to the cluster centers to obtain a number of cluster clusters; a new cluster center is re-determined from each cluster, and the remaining word lines are iteratively grouped according to the cluster centers to obtain a number of cluster clusters until the preset conditions are met and the word lines are grouped.

[0048] In some embodiments, the preset conditions include the clustering error being less than a set value for the clustering error, or the number of iterations exceeding a maximum number of iterations. The set value for the clustering error can be determined based on actual conditions and is not limited here, such as 0.1, 0.2, or 0.3; the maximum number of iterations can be determined based on actual conditions and is not limited here, such as 2, 3, or 5.

[0049] In one application scenario, the number of categories, the set value of the clustering error, and the set value of the number of iterations are determined, and the threshold voltages of the default read voltages of K word lines are randomly selected from multiple word lines as cluster centers. Then, based on the K cluster centers, a cluster center with the closest distance is assigned to each word line to obtain K cluster clusters. The cluster center is further re-determined for each cluster cluster, and the clustering error is calculated. Then, a new cluster center is re-assigned to the word lines in each cluster cluster and it is iterated. When the cluster error is less than the set value of the cluster error, or the number of iterations is greater than the set value of the number of iterations, the iterative process is exited and the grouping of multiple word lines is completed.

[0050] In one application scenario, the clustering algorithm used in this application is the K-means clustering algorithm. The execution process of the K-means clustering algorithm is as follows: Figure 3 As shown, the specific process may include the following:

[0051] S1: Get the initial cluster center.

[0052] S2: Assign cluster centers to the word line samples to obtain several clusters.

[0053] The word line sample includes a plurality of word lines.

[0054] S3: Determine whether there is a cluster without a corresponding word line.

[0055] If yes, return to step S1, otherwise continue to step S4.

[0056] S4: Calculate the sample mean and clustering error of each cluster, and update the cluster center.

[0057] S5: Determine whether the updated cluster center is the same as the previous cluster center.

[0058] If they are the same, continue to execute step S6, otherwise return to execute step S4.

[0059] S6: Output cluster center, clustering error and cluster category.

[0060] The wordline grouping method provided in some embodiments of the present application obtains voltage distribution data corresponding to storage cells in each wordline under different voltage states; concatenates the voltage distribution data under all voltage states to determine a target overlap region between the voltage distribution data under adjacent voltage states; determines the default read voltage threshold voltage for each wordline under different voltage states based on the target overlap region; and groups the wordlines using a clustering algorithm based on the default read voltage threshold voltage for each wordline under different voltage states. This method automatically completes the wordline grouping operation with short grouping time, high grouping efficiency, and low cost.

[0061] See also Figure 4 , Figure 4 FIG. 1 is a flow chart of a word line grouping method in some embodiments of the present application. The word line grouping method includes:

[0062] Step 401: Read all memory cells corresponding to a word line using a plurality of different read voltages to determine voltage states of all stored cells under the corresponding read voltages.

[0063] Step 402: Based on the read voltage and the voltage state, determine voltage distribution data corresponding to the memory cells in each word line under different voltage states.

[0064] Step 403: Integrate the voltage distribution data under all voltage states into the same coordinate system.

[0065] Step 404 : Collect voltage distribution data of a first array length along a coordinate system based on a default read voltage of the i-th voltage state.

[0066] Step 405 : Collect voltage distribution data of a second array length along the coordinate system based on a default read voltage of the (i+1)th voltage state; wherein the first array length intersects with the second array length on the coordinate system.

[0067] Step 406: Starting from array subscript 1 of the first array, each array subscript of the first array is used as a splicing starting point to determine an initial overlapping area with the second array, thereby obtaining a plurality of initial overlapping areas.

[0068] Step 407 : Calculate the total error of the voltage distribution data in one-to-one correspondence between the first array and the second array in each initial overlapping region.

[0069] Step 408: Determine the initial overlapping area corresponding to the minimum total error as the target overlapping area.

[0070] Step 409 : Determine the voltage data corresponding to the first array index in the overlapping region as the threshold voltage of the default read voltage of the i-th voltage state.

[0071] Step 410 : Select a preset number of word lines from a plurality of word lines, with threshold voltages of default read voltages in different voltage states, as cluster centers.

[0072] Step 411: Group the remaining word lines according to the cluster centers to obtain a number of clusters.

[0073] Step 412: re-determine a new cluster center from each cluster, and iteratively group the remaining word lines according to the cluster center to obtain a number of clusters until the preset conditions are met, thus completing the grouping of the word lines.

[0074] The word line grouping method provided in some embodiments of the present application can adaptively complete the word line grouping operation, and has a short grouping time, high grouping efficiency, and low cost.

[0075] See also Figure 5 , Figure 5 This is a schematic diagram of an electronic device in some embodiments of the present application. The electronic device 10 includes a memory 101 and a processor 102, wherein the memory 101 is used to store computer programs, and the processor 102 is used to execute computer programs to implement the word line grouping method described in any of the above embodiments, which will not be repeated here.

[0076] In some embodiments, the electronic device 10 includes a display interface that can display the voltage distribution data and the final word line grouping result, which is more intuitive and convenient for users to observe and / or record data.

[0077] See also Figure 6 , Figure 6 This is a schematic diagram of a computer-readable storage medium in some embodiments of the present application. The computer-readable storage medium 100 stores a computer program 1001. When the computer program 1001 is executed by the processor 102, it is used to implement the word line grouping method described in any of the above embodiments, which will not be repeated here.

[0078] The processor involved in this application can be called a CPU (Central Processing Unit), which may be an integrated circuit chip, or a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic device, or discrete hardware component.

[0079] The storage media used in this application include various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), or an optical disk.

[0080] In summary, the wordline grouping method provided in some embodiments of the present application calibrates the default read voltage to obtain the absolute value of the read voltage for each page; then, a clustering algorithm is used to automatically group the wordlines. This entire process can be automated, significantly reducing the time and labor required to obtain wordline grouping results.

[0081] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A word line grouping method, characterized in that: The word line grouping method includes: Acquiring voltage distribution data corresponding to the memory cells of each word line under different voltage states; splicing the voltage distribution data under all voltage states to determine a target overlapping area between the voltage distribution data under adjacent voltage states; determining a threshold voltage of a default read voltage of each of the word lines in different voltage states based on the target overlap area; The word lines are grouped using a clustering algorithm based on the threshold voltage of the default read voltage of each of the word lines in different voltage states.

2. The word line grouping method according to claim 1, wherein: The obtaining of voltage distribution data corresponding to the memory cells of each word line in different voltage states includes: Reading all memory cells corresponding to the word line using a plurality of different read voltages to determine voltage states of all memory cells under the corresponding read voltages; Based on the read voltage and the voltage state, voltage distribution data corresponding to memory cells in different voltage states of each word line is determined.

3. The word line grouping method according to claim 1, wherein: The step of splicing the voltage distribution data under all voltage states to determine a target overlapping area between the voltage distribution data under adjacent voltage states includes: Integrating the voltage distribution data under all voltage states into the same coordinate system; Based on the coordinate system, a target overlapping region between the voltage distribution data in adjacent voltage states is determined.

4. The word line grouping method according to claim 3, wherein: The adjacent voltage states include the i-th voltage state and the (i+1)-th voltage state; The determining, based on the coordinate system, a target overlapping area between the voltage distribution data in adjacent voltage states includes: Collecting voltage distribution data of a first array length along the coordinate system based on a default read voltage of the i-th voltage state; and collecting voltage distribution data of a second array length along the coordinate system based on a default read voltage of the (i+1)th voltage state; wherein the first array length intersects with the second array length on the coordinate system; A target overlapping area between the voltage distribution data of the first array length and the voltage distribution data of the second array length is determined.

5. The word line grouping method according to claim 4, wherein: The determining of a target overlapping area between the voltage distribution data of the first array length and the voltage distribution data of the second array length includes: Starting from array subscript 1 of the first array, each array subscript of the first array is used as a splicing starting point to determine an initial overlapping area with the second array, thereby obtaining multiple initial overlapping areas; Calculating a total error of voltage distribution data in one-to-one correspondence between the first array and the second array in each of the initial overlapping regions; The initial overlapping area corresponding to the minimum total error is determined as the target overlapping area.

6. The word line grouping method according to claim 4, wherein: The step of determining a threshold voltage of a default read voltage of each word line in different voltage states based on the target overlap area includes: The voltage data corresponding to the first array subscript in the overlapping area is determined as the threshold voltage of the default read voltage of the i-th voltage state.

7. The word line grouping method according to claim 1, wherein: The grouping of the word lines using a clustering algorithm based on the threshold voltage of the default read voltage of each word line in different voltage states includes: Selecting a preset number of threshold voltages of default read voltages of the word lines in different voltage states from the plurality of word lines as cluster centers; Group the remaining word lines according to the cluster centers to obtain several clusters; A new cluster center is re-determined from each of the clusters, and the remaining word lines are grouped according to the cluster centers in an iterative manner to obtain a plurality of clusters until a preset condition is met, thereby completing the grouping of the word lines.

8. The word line grouping method according to claim 7, wherein: The preset conditions include that the clustering error is less than a set value of the clustering error, or the number of iterations exceeds a maximum number of iterations.

9. An electronic device, characterized in that: The electronic device includes a processor and a memory, wherein the memory is used to store a computer program, and the processor is used to execute the computer program to implement the word line grouping method according to any one of claims 1 to 8.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the computer program is used to implement the word line grouping method according to any one of claims 1 to 8.

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