Heterogeneous composite substrate and preparation method and application thereof

Abstract

The invention provides a heterogeneous composite substrate and a preparation method and application thereof. The preparation method comprises the following steps: providing a to-be-processed substrate and a glass substrate, wherein the to-be-processed substrate comprises a silicon substrate layer, a silicon oxide layer and a silicon carbide layer which are sequentially arranged from bottom to top; carrying out ion implantation on one side of the silicon carbide layer of the to-be-processed substrate to form an ion implantation layer in the silicon oxide layer, and then bonding the ion implantation surface of the to-be-processed substrate with the surface of one side of the glass substrate to obtain a bonding body; stripping the bonding body along the ion implantation layer, and then removing the residual silicon oxide layer on the surface of the silicon carbide layer to obtain a heterogeneous composite substrate; the heterogeneous composite substrate comprises a glass substrate and a silicon carbide layer which are arranged in a stacked mode. The purpose of transferring the silicon carbide layer to the glass substrate is achieved, the temperature in the stripping process is low, it can be guaranteed that the glass substrate is not broken, and the silicon carbide layer on the prepared heterogeneous composite substrate has good uniformity and good application prospects.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor material processing, and in particular relates to a heterogeneous composite substrate and a preparation method and application thereof. Background Art

[0002] Silicon carbide (SiC), as a third-generation semiconductor material, has outstanding properties such as wide bandgap, high thermal conductivity, low loss in the visible to near-infrared band, wide transparency window (0.37-5.6μm), large second-order / third-order nonlinear coefficients, compatibility with CMOS processes, rich solid-state quantum light sources and excellent mechanical hardness. It shows great potential in high-power electronic devices, high-temperature and high-frequency devices, optoelectronics and optics.

[0003] Although semi-insulating SiC heterojunction substrates (i.e., heterojunction substrates combining semi-insulating SiC with glass substrates) have a large market application in the future, the use of ion implantation and stripping to produce heterojunction substrates often faces a major problem, namely, the high stripping temperature, which can easily cause deformation and fragmentation of the glass substrate, and ultimately make it impossible to obtain a heterojunction substrate that can be used normally.

[0004] Therefore, how to transfer the SiC film onto a glass substrate without breaking the glass substrate and ensuring that the SiC film has good uniformity is a technical problem that needs to be solved urgently. Summary of the Invention

[0005] In response to the shortcomings of the prior art, the present invention aims to provide a heterogeneous composite substrate, its preparation method, and its application. This invention uses the substrate to be processed as the carrier to which the silicon carbide layer is transferred. By ion implanting the substrate, bonding it to a glass substrate, and then peeling it off, the present invention not only achieves the goal of transferring the silicon carbide layer to the glass substrate, but also maintains a low temperature during the peeling process, ensuring that the glass substrate does not fragment. Furthermore, the resulting silicon carbide layer on the heterogeneous composite substrate has good uniformity, and has promising application prospects.

[0006] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a method for preparing a heterogeneous composite substrate, the method comprising the following steps:

[0008] A substrate to be processed and a glass substrate are provided. The substrate to be processed comprises a silicon base layer, a silicon oxide layer and a silicon carbide layer arranged in sequence from bottom to top.

[0009] Ion implantation is performed on one side of the silicon carbide layer of the substrate to be processed to form an ion implantation layer in the silicon oxide layer, and then the ion implantation surface of the substrate to be processed is bonded to one side surface of the glass substrate to obtain a bonded body.

[0010] The bonded body is subjected to a stripping process along the ion implantation layer, and then the residual silicon oxide layer on the surface of the silicon carbide layer is removed to obtain the heterogeneous composite substrate; the heterogeneous composite substrate comprises a glass substrate and a silicon carbide layer stacked.

[0011] The present invention uses the substrate to be processed as the carrier to which the silicon carbide layer is to be transferred, performs ion implantation on it, and bonds and peels off with the glass substrate. This not only achieves the goal of transferring the silicon carbide layer to the glass substrate, but also the temperature during the peeling process is low, which can ensure that the glass substrate is not broken. In addition, the silicon carbide layer on the obtained heterogeneous composite substrate has good uniformity and has good application prospects.

[0012] In the present invention, ion implantation is performed to form an ion implantation layer in the silicon oxide layer rather than in the silicon carbide layer, which can facilitate subsequent stripping at a lower temperature and achieve stripping at a lower temperature without deforming or breaking the glass substrate.

[0013] In the heterogeneous composite substrate obtained by the preparation method provided by the present invention, it can be effectively ensured that the silicon carbide layer on the surface of the glass substrate has single crystal properties.

[0014] It should be noted that ion implantation is a process in which compound molecules containing impurities are ionized into impurity ions, which are then gathered into beams and accelerated with a strong electric field to become high-energy ion beams. After being screened by a magnetic field, the beams are directly bombarded on semiconductor materials. The advantage of ion implantation is that the implantation concentration and depth can be precisely controlled.

[0015] It should be noted that after the stripping process, in addition to obtaining a heterogeneous composite substrate with a residual silicon oxide layer on the surface of the silicon carbide layer, a donor substrate consisting of the remaining silicon base layer and the silicon oxide layer is also obtained, and the donor substrate can be reused.

[0016] Preferably, the silicon carbide layer is a semi-insulating silicon carbide layer. It should be noted that the semi-insulating silicon carbide layer has a relatively high resistivity, usually greater than 1×10 8 Ω·cm, with excellent optical properties, such as low loss in the visible to near-infrared band, a wide transparent window (0.37-5.6μm), and large second-order / third-order nonlinear coefficients.

[0017] Preferably, the ion species of the ion implantation include hydrogen ions and helium ions.

[0018] Preferably, the implantation energy of the hydrogen ions and the helium ions is independently 1-1000kev, for example, 1kev, 10kev, 100kev, 300kev, 500kev, 700kev, 900kev or 1000kev.

[0019] Preferably, the implantation dose of hydrogen ions and helium ions is independently 1×10 16 -1×10 18 Ions / cm 2 , for example, it can be 1×10 16 Ions / cm 2 , 5×10 16 Ions / cm 2 , 1×10 17 Ions / cm 2 , 5×101 7 Ions / cm 2 or 1×10 18 Ions / cm 2 wait.

[0020] Preferably, the Tilt angles of the hydrogen and helium ion implantations are independently 0-60°, for example, 0°, 5°, 7°, 10°, 15°, or 45°. It should be noted that the Tilt angle refers to the inclination angle, i.e., the angle between the substrate surface normal and the ion beam.

[0021] Preferably, the Twist angles of the hydrogen and helium ion implantations are independently 0-90°, for example, 0°, 22°, 23°, 45°, or 90°. It should be noted that the Twist angle refers to the torsion angle, i.e., the angle between a plane containing the ion beam and the substrate normal and a plane perpendicular to the substrate principal plane and containing the substrate normal.

[0022] Preferably, the implantation temperature of the hydrogen ions and the helium ions is independently 20-800°C, for example, 20°C, 50°C, 100°C, 200°C, 400°C, 600°C or 800°C.

[0023] Preferably, the order of ion implantation is: helium ion implantation first, and hydrogen ion implantation later.

[0024] In the present invention, the ion implantation method of first implanting helium ions and then implanting hydrogen ions can significantly reduce the stripping temperature of the subsequent stripping process, so that the glass substrate will not be broken during the stripping process.

[0025] Preferably, the implantation dose ratio of helium ions to hydrogen ions is 1:(4-8), for example, it may be 1:4, 1:5, 1:6, 1:7 or 1:8.

[0026] In the present invention, helium ions and hydrogen ions are synergistically coordinated with an appropriate injection dose ratio, which is beneficial to optimizing the stripping effect. An appropriate ratio can optimize the injection dose. If the dose is too small, stripping cannot be achieved. If the dose is too large, the injection time and cost are wasted, which is not conducive to reducing costs and increasing efficiency.

[0027] Preferably, the bonding method includes a room temperature bonding method or a hydrophilic bonding method.

[0028] Preferably, the parameters of the room temperature bonding method include:

[0029] The bonding temperature is 20-30°C, for example, 20°C, 22°C, 24°C, 26°C, 28°C or 30°C, and the absolute vacuum degree is ≤1×10 -6 Pa, for example, can be 8×10 -7 Pa, 5×10 -7 Pa, 3×10 -7 Pa or 1×10 -7 Pa, etc., and the bonding pressure is 20-80 kN, for example, it can be 20 kN, 30 kN, 40 kN, 50 kN, 60 kN, 70 kN or 80 kN.

[0030] Preferably, the parameters of the hydrophilic bonding method include:

[0031] The activation gas includes oxygen and nitrogen, the power is 50-150W, for example, it can be 50W, 75W, 100W, 125W or 150W, etc., the bonding pressure is 200-8000N, for example, it can be 200N, 500N, 1000N, 2000N, 3000N, 4000N, 5000N, 6000N, 7000N or 8000N, etc., and the bonding time is 10-100s, for example, it can be 10s, 30s, 50s, 70s, 90s or 100s, etc.

[0032] In the hydrophilic bonding method of the present invention, the use of activated gas can not only clean the bonding surface to a certain extent, but also make the bonding surface easier to perform bonding operations.

[0033] Preferably, the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , for example, it can be 1.4 J / m 2 , 1.6J / m 2 , 1.8J / m 2 , 2J / m 2 , 2.2J / m 2 or 2.4 J / m 2 wait.

[0034] Preferably, the stripping treatment includes thermal treatment stripping.

[0035] Preferably, the temperature of the heat treatment peeling is 300-500°C, for example, 300°C, 350°C, 400°C, 450°C or 500°C.

[0036] The present invention only requires a temperature of 300-500° C. to achieve the peeling effect. At this temperature, the glass substrate will not be damaged and will not cause problems such as fragmentation.

[0037] Preferably, the heat treatment peeling time is 1-60 min, for example, it can be 1 min, 5 min, 10 min, 20 min, 30 min, 40 min, 50 min or 60 min.

[0038] Preferably, the atmosphere for the heat treatment stripping is an inert atmosphere, for example, a nitrogen atmosphere or an argon atmosphere.

[0039] Preferably, the method of removing the residual silicon oxide layer on the surface of the silicon carbide layer includes a polishing method.

[0040] The present invention does not limit the time and removal amount of the polishing method, as long as the residual silicon oxide layer on the surface of the silicon carbide layer can be removed. For example, the polishing time of the polishing method is 30-300s, such as 30s, 50s, 100s, 200s or 300s, and the removal amount of the polishing method can be, for example, like or wait.

[0041] Preferably, the polishing treatment method includes a chemical mechanical polishing method.

[0042] Preferably, the step of preparing the substrate to be processed comprises:

[0043] A first donor and a second donor are provided, wherein the first donor includes a stacked silicon base layer and a silicon oxide layer, and the second donor is a silicon carbide integral structure, wherein a weakened layer is formed inside the silicon carbide integral structure for separating and forming a silicon carbide layer and a silicon carbide residual layer.

[0044] The silicon oxide layer of the first donor and the silicon carbide layer of the second donor are bonded, and then a splitting process is performed along the weakened layer to obtain the substrate to be processed.

[0045] It should be noted that after the splitting process, in addition to obtaining the substrate to be processed, a remaining silicon carbide residual layer is also obtained, which can be reused.

[0046] Preferably, the silicon oxide layer of the first donor and the silicon carbide layer of the second donor are bonded, and the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , for example, it can be 1.4 J / m 2 , 1.6J / m 2 , 1.8J / m 2 , 2J / m 2 , 2.2J / m2 or 2.4 J / m 2 wait.

[0047] Preferably, the temperature of the splitting treatment is 800-1200°C, for example, 800°C, 900°C, 1000°C, 1100°C or 1200°C.

[0048] Preferably, the fragmentation treatment time is 1-60 min, for example, 1 min, 5 min, 10 min, 20 min, 30 min, 40 min, 50 min or 60 min.

[0049] Preferably, the atmosphere for the splitting process is an inert atmosphere, for example, a nitrogen atmosphere or an argon atmosphere.

[0050] Preferably, after the splitting process, an annealing repair process is also performed.

[0051] Preferably, the temperature range of the annealing repair process is 100-1300°C, for example, it can be 100°C, 300°C, 500°C, 800°C, 900°C, 1000°C, 1100°C, 1200°C or 1300°C, and the time is 10-660min, for example, it can be 10min, 30min, 50min, 100min, 200min, 300min, 400min, 500min, 600min or 660min, etc.

[0052] Preferably, the annealing repair process is a one-step annealing process or a gradient temperature annealing process, for example, 300°C for 1 hour, 500°C for 1 hour, 700°C for 1 hour, 900°C for 1 hour, and 1100°C for 1 hour.

[0053] Preferably, the atmosphere of the annealing repair process is an inert atmosphere, such as a nitrogen atmosphere or an argon atmosphere.

[0054] In the present invention, the implantation damage is repaired through an annealing repair process, and deformation can be slowed down, so that the heterogeneous composite substrate can withstand higher temperatures without significant deformation.

[0055] It should be noted that, in the present invention, a polishing process may be performed after the annealing repair process is completed. The polishing process may obtain a smooth surface, which is convenient for bonding the substrate to be processed with the glass substrate.

[0056] Preferably, the preparation method comprises the following steps:

[0057] (1) Providing a silicon substrate and a semi-insulating silicon carbide substrate;

[0058] Oxidation is performed on one side surface of the silicon substrate to form a silicon oxide layer to obtain a first donor; and first ion implantation is performed on one side surface of the semi-insulating silicon carbide substrate to form a weakened layer to obtain a second donor.

[0059] The ion species of the first ion implantation include hydrogen ions, and the parameters of the first ion implantation include: an implantation energy of 1-1000kev, for example, 1kev, 10kev, 100kev, 300kev, 500kev, 700kev, 900kev or 1000kev, etc., and an implantation dose of 1×10 16 -1×10 18 Ions / cm 2 , for example, it can be 1×10 16 Ions / cm 2 , 5×10 16 Ions / cm 2 , 1×10 17 Ions / cm 2 , 5×101 7 Ions / cm 2 or 1×10 18 Ions / cm 2 etc., the Tilt angle is 0-60°, for example, it can be 0°, 5°, 7°, 10°, 15° or 45°, etc., the Twist angle is 0-90°, for example, it can be 0°, 22°, 23°, 45° or 90°, etc., and the injection temperature is 20-800°C, for example, it can be 20°C, 50°C, 100°C, 200°C, 400°C, 600°C or 800°C, etc.

[0060] (2) performing a first bonding between the silicon oxide layer of the first donor and the semi-insulating silicon carbide layer of the second donor, wherein the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , then a splitting process is performed along the weakened layer, followed by an annealing repair process and a polishing process to obtain a substrate to be processed and a semi-insulating silicon carbide residual layer; wherein the substrate to be processed includes a silicon base layer, a silicon oxide layer and a semi-insulating silicon carbide layer arranged in sequence from bottom to top.

[0061] The first bonding method includes a room temperature bonding method or a hydrophilic bonding method; the parameters of the room temperature bonding method include: a bonding temperature of 20-30°C, an absolute vacuum degree of ≤1×10 -6Pa, the bonding pressure is 20-80kN; the parameters of the hydrophilic bonding method include: the activation gas includes oxygen and nitrogen, the power is 50-150W, the bonding pressure is 200-8000N, and the bonding time is 10-100s; the temperature of the splitting treatment is 800-1200°C, the time of the splitting treatment is 1-60min, and the atmosphere of the splitting treatment is an inert atmosphere; the annealing repair treatment process is a gradient temperature annealing process, the temperature range is 100-1300°C, the time is 10-660min, and the atmosphere is an inert atmosphere.

[0062] (3) Providing a glass substrate; performing a second ion implantation on one side of the semi-insulating silicon carbide layer of the substrate to be processed, so as to form an ion implantation layer in the silicon oxide layer; and then performing a second bonding between the ion implantation surface of the substrate to be processed and one side surface of the glass substrate, wherein the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , and obtain a bonded body.

[0063] The ion species of the second ion implantation include hydrogen ions and helium ions. The order of the second ion implantation is: first helium ion implantation, then hydrogen ion implantation. The implantation energy of the hydrogen ions and helium ions is independently 1-1000keV, and the implantation dose is independently 1×10 16 -1×10 18 Ions / cm 2 The injection tilt angle is independently 0-60°, the injection twist angle is independently 0-90°, and the injection temperature is independently 20-800°C; the injection dose ratio of helium ions to hydrogen ions is 1:(4-8); the second bonding method includes a room temperature bonding method or a hydrophilic bonding method; the parameters of the room temperature bonding method include: a bonding temperature of 20-30°C, an absolute vacuum degree of ≤1×10 -6 Pa, bonding pressure is 20-80kN; the parameters of the hydrophilic bonding method include: activation gas includes oxygen and nitrogen, power is 50-150W, bonding pressure is 200-8000N, and bonding time is 10-100s.

[0064] (4) The bonded body is subjected to heat treatment and peeled along the ion implantation layer, and then the residual silicon oxide layer on the surface of the semi-insulating silicon carbide layer is removed by polishing to obtain the heterogeneous composite substrate; the heterogeneous composite substrate includes a stacked glass substrate and a semi-insulating silicon carbide layer.

[0065] The temperature of the heat treatment stripping is 300-500° C., the time of the heat treatment stripping is 1-60 min, and the atmosphere of the heat treatment stripping is an inert atmosphere.

[0066] In a second aspect, the present invention provides a heterogeneous composite substrate, which is prepared by the preparation method described in the first aspect.

[0067] In a third aspect, the present invention provides an application of the heterogeneous composite substrate as described in the second aspect, wherein the heterogeneous composite substrate is used for preparing a semiconductor device.

[0068] The numerical range described in the present invention includes not only the point values ​​listed above, but also any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0069] Compared with the prior art, the present invention has the following beneficial effects:

[0070] (1) The present invention uses the substrate to be processed as the carrier to which the silicon carbide layer is to be transferred. By performing ion implantation on the substrate and bonding and peeling it with the glass substrate, not only the goal of transferring the silicon carbide layer to the glass substrate is achieved, but also the temperature during the peeling process is low, which can ensure that the glass substrate is not broken. In addition, the silicon carbide layer on the obtained heterogeneous composite substrate has good uniformity and good application prospects.

[0071] (2) The preparation method provided by the present invention has simple process and low cost, and the obtained heterogeneous composite substrate is of excellent quality and has good performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0072] Figure 1 This is a schematic flow chart of the preparation method provided in Example 1 of the present invention.

[0073] Among them, 10 is a silicon substrate; 11 is a silicon oxide layer; 12 is a first donor; 20 is a semi-insulating silicon carbide substrate; 21 is a weakened layer; 22 is a second donor; 23 is a semi-insulating silicon carbide layer; 24 is a semi-insulating silicon carbide residual layer; 30 is a substrate to be processed; 31 is an ion implantation layer; 40 is a glass substrate; and 50 is a heterogeneous composite substrate. DETAILED DESCRIPTION

[0074] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0075] Example 1

[0076] This embodiment provides a method for preparing a heterogeneous composite substrate, the flow diagram of which is shown in FIG. Figure 1 As shown, the preparation method comprises the following steps:

[0077] (1) Providing a silicon substrate 10 and a semi-insulating silicon carbide substrate 2010;

[0078] Oxidation is performed on one side surface of the silicon substrate 10 to form a silicon oxide layer 11 to obtain a first donor 12; a first ion implantation is performed on one side surface of the semi-insulating silicon carbide substrate 2010 to form a weakened layer 21 to obtain a second donor 22.

[0079] The ion type of the first ion implantation is hydrogen ion, and the parameters of the first ion implantation include: implantation energy of 100keV, implantation dose of 6×10 16 Ions / cm 2 , the Tilt angle is 7°, the Twist angle is 23°, and the injection temperature is 60℃.

[0080] (2) The silicon oxide layer 11 of the first donor 12 and the semi-insulating silicon carbide layer 23 of the second donor 22 are first bonded, and the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , then a splitting process is performed along the weakened layer 21, followed by an annealing repair process and a polishing process to obtain a substrate to be processed 30 and a semi-insulating silicon carbide residual layer 24; wherein, the substrate to be processed 30 includes a silicon base layer, a silicon oxide layer 11 and a semi-insulating silicon carbide layer 23 arranged in sequence from bottom to top.

[0081] The first bonding method is a room temperature bonding method; the parameters of the room temperature bonding method include: bonding temperature of 25°C, absolute vacuum of 1×10 -7 Pa, the bonding pressure is 50kN; the temperature of the splitting treatment is 800℃, the time of the splitting treatment is 60min, and the atmosphere of the splitting treatment is a nitrogen atmosphere; the annealing repair treatment process is a gradient temperature annealing process, that is, 300℃ for 1h, 500℃ for 1h, 700℃ for 1h, 900℃ for 1h, and 1100℃ for 1h, and the atmosphere is an argon atmosphere; the polishing treatment method is chemical mechanical polishing, the treatment time is 100s, and the removal amount of the semi-insulating silicon carbide layer 23 on the surface of the silicon oxide layer 11 is

[0082] (3) Providing a glass substrate 40; performing a second ion implantation on one side of the semi-insulating silicon carbide layer 23 of the substrate to be processed 30, so as to form an ion implantation layer 31 in the silicon oxide layer 11; and then performing a second bonding between the ion implantation surface of the substrate to be processed 30 and one side surface of the glass substrate 40, wherein the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , and obtain a bonded body.

[0083] The ion types of the second ion implantation include hydrogen ions and helium ions. The order of the second ion implantation is: first helium ion implantation, then hydrogen ion implantation. The implantation energy of helium ions is 160keV, and the implantation dose is 1×10 16 Ions / cm2 The injection tilt angle is 7°, the injection twist angle is 23°, the injection temperature is 60°C, the hydrogen ion injection energy is 120keV, and the injection dose is 6×10 16 Ions / cm 2 The injection tilt angle is 7°, the injection twist angle is 23°, and the injection temperature is 60°C; the injection dose ratio of helium ions and hydrogen ions is 1:6; the second bonding method is a hydrophilic bonding method, and the parameters of the hydrophilic bonding method include: activation gases including oxygen and nitrogen, power of 100W, bonding pressure of 1000N, and bonding time of 60s.

[0084] (4) The bonded body is heat-treated and peeled along the ion implantation layer 31, and then the residual silicon oxide layer 11 on the surface of the semi-insulating silicon carbide layer 23 is removed by chemical mechanical polishing to obtain a heterogeneous composite substrate 50; the heterogeneous composite substrate 50 includes a stacked glass substrate 40 and a semi-insulating silicon carbide layer 23.

[0085] The temperature of the heat treatment stripping is 300℃, the time of the heat treatment stripping is 30min, and the atmosphere of the heat treatment stripping is nitrogen atmosphere; the processing time of the chemical mechanical polishing method is 80s, and the removal amount is

[0086] Example 2

[0087] This embodiment provides a method for preparing a heterogeneous composite substrate, the method comprising the following steps:

[0088] (1) Providing a silicon substrate and a semi-insulating silicon carbide substrate;

[0089] Oxidation is performed on one side surface of a silicon substrate to form a silicon oxide layer to obtain a first donor; and first ion implantation is performed on one side surface of a semi-insulating silicon carbide substrate to form a weakened layer to obtain a second donor.

[0090] The ion type of the first ion implantation is hydrogen ion, and the parameters of the first ion implantation include: implantation energy of 60keV, implantation dose of 6×10 16 Ions / cm 2 , the Tilt angle is 7°, the Twist angle is 23°, and the injection temperature is 60℃.

[0091] (2) The silicon oxide layer of the first donor and the semi-insulating silicon carbide layer of the second donor are first bonded, and the bonding strength of the bonding interface after bonding is ≥1.4J / m 2, then a splitting process is performed along the weakened layer, followed by an annealing repair process and a polishing process to obtain a substrate to be processed and a semi-insulating silicon carbide residual layer; wherein the substrate to be processed includes a silicon base layer, a silicon oxide layer and a semi-insulating silicon carbide layer arranged in sequence from bottom to top.

[0092] The first bonding method is a room temperature bonding method; the parameters of the room temperature bonding method include: bonding temperature of 25°C, absolute vacuum of 1×10 -7 Pa, the bonding pressure is 30kN; the temperature of the splitting treatment is 900℃, the time of the splitting treatment is 60min, and the atmosphere of the splitting treatment is nitrogen atmosphere; the temperature of the annealing repair treatment is 900℃, the time is 60min, and the atmosphere is argon atmosphere; the polishing method is chemical mechanical polishing, the processing time is 100s, and the removal amount of the semi-insulating silicon carbide layer on the surface of the silicon oxide layer is

[0093] (3) Providing a glass substrate; performing a second ion implantation on one side of the semi-insulating silicon carbide layer of the substrate to be processed, so as to form an ion implantation layer in the silicon oxide layer; and then performing a second bonding between the ion implantation surface of the substrate to be processed and one side surface of the glass substrate, wherein the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , and obtain a bonded body.

[0094] The ion types of the second ion implantation include hydrogen ions and helium ions. The order of the second ion implantation is: first helium ion implantation, then hydrogen ion implantation. The implantation energy of helium ions is 90keV, and the implantation dose is 1×10 16 Ions / cm 2 The injection tilt angle is 7°, the injection twist angle is 23°, the injection temperature is 60°C, the hydrogen ion injection energy is 70keV, and the injection dose is 5×10 16 Ions / cm 2 The injection tilt angle is 7°, the injection twist angle is 23°, and the injection temperature is 60°C; the injection dose ratio of helium ions and hydrogen ions is 1:5; the second bonding method is a hydrophilic bonding method, and the parameters of the hydrophilic bonding method include: activation gases including oxygen and nitrogen, power of 50W, bonding pressure of 200N, and bonding time of 10s.

[0095] (4) The bonded body is subjected to heat treatment and peeled along the ion implantation layer, and then the residual silicon oxide layer on the surface of the semi-insulating silicon carbide layer is removed by chemical mechanical polishing to obtain a heterogeneous composite substrate; the heterogeneous composite substrate includes a stacked glass substrate and a semi-insulating silicon carbide layer.

[0096] The temperature of the heat treatment stripping is 400℃, the time of the heat treatment stripping is 30min, and the atmosphere of the heat treatment stripping is nitrogen atmosphere; the processing time of the chemical mechanical polishing method is 80s, and the removal amount is

[0097] Example 3

[0098] This embodiment provides a method for preparing a heterogeneous composite substrate, the method comprising the following steps:

[0099] (1) Providing a silicon substrate and a semi-insulating silicon carbide substrate;

[0100] Oxidation is performed on one side surface of a silicon substrate to form a silicon oxide layer to obtain a first donor; and first ion implantation is performed on one side surface of a semi-insulating silicon carbide substrate to form a weakened layer to obtain a second donor.

[0101] The ion type of the first ion implantation is hydrogen ion, and the parameters of the first ion implantation include: implantation energy of 200keV, implantation dose of 1×10 17 Ions / cm 2 , the Tilt angle is 7°, the Twist angle is 23°, and the injection temperature is 80°C.

[0102] (2) The silicon oxide layer of the first donor and the semi-insulating silicon carbide layer of the second donor are first bonded, and the bonding strength of the bonding interface after bonding is ≥1.4J / m 2 , then a splitting process is performed along the weakened layer, followed by an annealing repair process and a polishing process to obtain a substrate to be processed and a semi-insulating silicon carbide residual layer; wherein the substrate to be processed includes a silicon base layer, a silicon oxide layer and a semi-insulating silicon carbide layer arranged in sequence from bottom to top.

[0103] The first bonding method is a room temperature bonding method; the parameters of the room temperature bonding method include: bonding temperature of 25°C, absolute vacuum of 1×10 -7 Pa, the bonding pressure is 70kN; the temperature of the splitting treatment is 1100℃, the time of the splitting treatment is 30min, and the atmosphere of the splitting treatment is nitrogen atmosphere; the temperature of the annealing repair treatment is 1300℃, the time is 60min, and the atmosphere is argon atmosphere; the polishing method is chemical mechanical polishing, the processing time is 100s, and the removal amount of the semi-insulating silicon carbide layer on the surface of the silicon oxide layer is

[0104] (3) Providing a glass substrate; performing a second ion implantation on one side of the semi-insulating silicon carbide layer of the substrate to be processed, so as to form an ion implantation layer in the silicon oxide layer; and then performing a second bonding between the ion implantation surface of the substrate to be processed and one side surface of the glass substrate, wherein the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2, and obtain a bonded body.

[0105] The ion types of the second ion implantation include hydrogen ions and helium ions. The order of the second ion implantation is: first helium ion implantation, then hydrogen ion implantation. The implantation energy of helium ions is 450keV, and the implantation dose is 2×10 16 Ions / cm 2 The injection tilt angle is 7°, the injection twist angle is 23°, the injection temperature is 80°C, the hydrogen ion injection energy is 210keV, and the injection dose is 1.6×10 17 Ions / cm 2 The injection tilt angle is 7°, the injection twist angle is 23°, and the injection temperature is 80°C; the injection dose ratio of helium ions and hydrogen ions is 1:8; the second bonding method is a hydrophilic bonding method, and the parameters of the hydrophilic bonding method include: activation gases including oxygen and nitrogen, power of 150W, bonding pressure of 5000N, and bonding time of 100s.

[0106] (4) The bonded body is subjected to heat treatment and peeled along the ion implantation layer, and then the residual silicon oxide layer on the surface of the semi-insulating silicon carbide layer is removed by chemical mechanical polishing to obtain a heterogeneous composite substrate; the heterogeneous composite substrate includes a stacked glass substrate and a semi-insulating silicon carbide layer.

[0107] The temperature of the heat treatment stripping is 500℃, the time of the heat treatment stripping is 30min, and the atmosphere of the heat treatment stripping is nitrogen atmosphere; the processing time of the chemical mechanical polishing method is 80s, and the removal amount is

[0108] Example 4

[0109] The difference between this embodiment and embodiment 1 is that the ion species of the second ion implantation in step (3) is only helium ions.

[0110] The rest of the preparation methods and parameters remained the same as in Example 1.

[0111] Example 5

[0112] The difference between this embodiment and embodiment 1 is that the order of the second ion implantation in step (3) is: hydrogen ion implantation first, then helium ion implantation.

[0113] The rest of the preparation methods and parameters remained the same as in Example 1.

[0114] Example 6

[0115] The difference between this embodiment and embodiment 1 is that the implantation dose ratio of helium ions and hydrogen ions in step (3) is 1:2.

[0116] The rest of the preparation methods and parameters remained the same as in Example 1.

[0117] Example 7

[0118] The difference between this embodiment and embodiment 1 is that the implantation dose ratio of helium ions and hydrogen ions in step (3) is 1:10.

[0119] The rest of the preparation methods and parameters remained the same as in Example 1.

[0120] Example 8

[0121] The difference between this embodiment and embodiment 1 is that the temperature of the heat treatment peeling in step (4) is 200°C.

[0122] The rest of the preparation methods and parameters remained the same as in Example 1.

[0123] Example 9

[0124] The difference between this embodiment and embodiment 1 is that the temperature of the heat treatment peeling in step (4) is 700°C.

[0125] The rest of the preparation methods and parameters remained the same as in Example 1.

[0126] Comparative Example 1

[0127] This comparative example provides a method for preparing a heterogeneous composite substrate, the preparation method comprising the following steps:

[0128] A glass substrate is provided, and a silicon carbide layer is prepared on one surface of the glass substrate by plasma enhanced chemical vapor deposition. The deposition temperature is 300°C, the radio frequency power is 200W, the gas used is a combination of SiH4+CH4, the deposition time is 45 minutes, and the deposition thickness is 250nm, thereby obtaining a heterogeneous composite substrate.

[0129] Performance Testing

[0130] The glass substrate fragmentation situation of the heterogeneous composite substrates prepared in the above embodiments and comparative examples was counted, and the refractive index and extinction coefficient of the heterogeneous composite substrates were tested using a gyroscopic instrument.

[0131] The statistical and test results are shown in Table 1.

[0132] Table 1

[0133]

[0134]

[0135] analyze:

[0136] As can be seen from Table 1, the present invention uses the substrate to be processed as the carrier to which the silicon carbide layer is to be transferred, performs ion implantation on it, and bonds and peels off with the glass substrate. This not only achieves the goal of transferring the silicon carbide layer to the glass substrate, but also the temperature during the peeling process is low, which can ensure that the glass substrate is not broken. In addition, the silicon carbide layer on the obtained heterogeneous composite substrate has good uniformity and has good application prospects.

[0137] From the comparison between Example 1 and Example 4, it can be seen that if the ion type of the second ion implantation is only helium ions, it is not conducive to stripping at low temperature. If the silicon carbide is to be stripped off, the temperature needs to be increased, which will cause the glass substrate to deform or break.

[0138] By comparing Example 1 with Example 5, it can be seen that if the order of the second ion implantation is: hydrogen ion implantation first, then helium ion implantation, it is not conducive to stripping at low temperatures. Generally, it is easier to form a cavity if helium is injected first, thereby making it easier for subsequent hydrogen implantation to aggregate and strip. Therefore, if stripping is to be achieved by first injecting hydrogen ions and then helium ions, the temperature needs to be increased, but this will cause the glass substrate to deform or break.

[0139] By comparing Example 1 with Examples 6-7, it can be seen that if the injection dose ratio of helium ions and hydrogen ions is too small, the injection time will be extended, which is not conducive to production and the subsequent test performance will be poor; if the injection dose ratio of helium ions and hydrogen ions is too large, it will not be easy to peel off in a low temperature environment.

[0140] By comparing Example 1 with Examples 8-9, it can be seen that if the temperature of the heat treatment peeling in step (4) is too low, peeling cannot be performed and the desired structure cannot be obtained; if the temperature of the heat treatment peeling in step (4) is too high, it is easy to cause the glass substrate to be broken or deformed.

[0141] From the comparison between Example 1 and Comparative Example 1, it can be seen that if a semi-insulating silicon carbide layer is directly deposited on a glass substrate to obtain a heterogeneous composite substrate, single-crystalline silicon carbide cannot be obtained, and the prepared film layer has poor performance and cannot meet the use requirements.

[0142] It should be noted that while the present invention illustrates the process method through the above-described embodiments, the present invention is not limited to the above-described process steps, and does not necessarily rely on the above-described process steps for implementation. Those skilled in the art will appreciate that any improvements to the present invention, equivalent replacements for the raw materials used, additions of auxiliary components, and selection of specific methods, etc., fall within the scope of protection and disclosure of the present invention.

Claims

1. A method for preparing a heterogeneous composite substrate, characterized in that: The preparation method comprises the following steps: Providing a substrate to be processed and a glass substrate, wherein the substrate to be processed comprises a silicon base layer, a silicon oxide layer and a silicon carbide layer arranged in sequence from bottom to top; Performing ion implantation on one side of the silicon carbide layer of the substrate to be processed to form an ion implantation layer in the silicon oxide layer, and then bonding the ion implantation surface of the substrate to be processed to one side surface of the glass substrate to obtain a bonded body; The bonded body is subjected to a stripping process along the ion implantation layer, and then the residual silicon oxide layer on the surface of the silicon carbide layer is removed to obtain the heterogeneous composite substrate; the heterogeneous composite substrate comprises a glass substrate and a silicon carbide layer stacked.

2. The preparation method according to claim 1, characterized in that The ion species of the ion implantation include hydrogen ions and helium ions; Preferably, the order of the ion implantation is: first implanting helium ions, then implanting hydrogen ions; Preferably, the implantation dose ratio of helium ions to hydrogen ions is 1:(4-8).

3. The preparation method according to claim 1 or 2, characterized in that The bonding method includes a room temperature bonding method or a hydrophilic bonding method; Preferably, the parameters of the room temperature bonding method include: The bonding temperature is 20-30℃ and the absolute vacuum degree is ≤1×10 -6 Pa, bonding pressure is 20-80kN; Preferably, the parameters of the hydrophilic bonding method include: The activation gas includes oxygen and nitrogen, the power is 50-150W, the bonding pressure is 200-8000N, and the bonding time is 10-100s.

4. The preparation method according to any one of claims 1 to 3, characterized in that The stripping treatment method includes thermal treatment stripping; Preferably, the temperature of the heat treatment peeling is 300-500°C; Preferably, the heat treatment peeling time is 1-60min; Preferably, the atmosphere for the heat treatment stripping is an inert atmosphere.

5. The preparation method according to any one of claims 1 to 4, characterized in that The method of removing the residual silicon oxide layer on the surface of the silicon carbide layer includes a polishing method; Preferably, the polishing treatment method includes a chemical mechanical polishing method.

6. The preparation method according to any one of claims 1 to 5, characterized in that The steps of preparing the substrate to be processed include: Providing a first donor and a second donor, wherein the first donor includes a stacked silicon base layer and a silicon oxide layer, and the second donor is a silicon carbide integral structure, wherein a weakened layer is formed inside the silicon carbide integral structure for separating and forming a silicon carbide layer and a silicon carbide residual layer; The silicon oxide layer of the first donor and the silicon carbide layer of the second donor are bonded, and then a splitting process is performed along the weakened layer to obtain the substrate to be processed.

7. The preparation method according to claim 6, characterized in that The temperature of the splitting treatment is 800-1200°C; Preferably, the time for the splitting treatment is 1-60 min; Preferably, the atmosphere for the splitting treatment is an inert atmosphere; Preferably, after the splitting process, an annealing repair process is also performed; Preferably, the temperature range of the annealing repair process is 100-1300°C and the time is 10-660min; Preferably, the annealing repair process is a one-step annealing process or a gradient temperature rising annealing process.

8. The preparation method according to any one of claims 1 to 7, characterized in that The preparation method comprises the following steps: (1) Providing a silicon substrate and a semi-insulating silicon carbide substrate; Oxidation is performed on one side surface of the silicon substrate to form a silicon oxide layer to obtain a first donor; first ion implantation is performed on one side surface of the semi-insulating silicon carbide substrate to form a weakened layer to obtain a second donor; The ion species of the first ion implantation include hydrogen ions, and the parameters of the first ion implantation include: an implantation energy of 1-1000kev, an implantation dose of 1×10 16 -1×10 18 Ions / cm 2 , Tilt angle is 0-60°, Twist angle is 0-90°, injection temperature is 20-800℃; (2) performing a first bonding between the silicon oxide layer of the first donor and the semi-insulating silicon carbide layer of the second donor, wherein the bonding strength of the bonding interface after bonding is ≥1.4 J / m 2 , then performing a splitting process along the weakened layer, followed by an annealing repair process and a polishing process to obtain a substrate to be processed and a semi-insulating silicon carbide residual layer; wherein the substrate to be processed includes a silicon base layer, a silicon oxide layer and a semi-insulating silicon carbide layer arranged in sequence from bottom to top; The first bonding method includes a room temperature bonding method or a hydrophilic bonding method; the parameters of the room temperature bonding method include: a bonding temperature of 20-30°C, an absolute vacuum degree of ≤1×10 -6 Pa, bonding pressure is 20-80 kN; the parameters of the hydrophilic bonding method include: activation gas including oxygen and nitrogen, power is 50-150 W, bonding pressure is 200-8000 N, bonding time is 10-100 s; the temperature of the splitting treatment is 800-1200 ° C, the time of the splitting treatment is 1-60 min, and the atmosphere of the splitting treatment is an inert atmosphere; the annealing repair process is a gradient temperature annealing process, the temperature range is 100-1300 ° C, the time is 10-660 min, and the atmosphere is an inert atmosphere; (3) Providing a glass substrate; performing a second ion implantation on one side of the semi-insulating silicon carbide layer of the substrate to be processed, so as to form an ion implantation layer in the silicon oxide layer; and then performing a second bonding between the ion implantation surface of the substrate to be processed and one side surface of the glass substrate, wherein the bonding strength of the bonding interface after bonding is ≥ ≥ 1.4 J / m 2 , to obtain a bonded body; The ion species of the second ion implantation include hydrogen ions and helium ions. The order of the second ion implantation is: first helium ion implantation, then hydrogen ion implantation. The implantation energy of the hydrogen ions and helium ions is independently 1-1000keV, and the implantation dose is independently 1×10 16 -1×10 18 Ions / cm 2 The injection tilt angle is independently 0-60°, the injection twist angle is independently 0-90°, and the injection temperature is independently 20-800°C; the injection dose ratio of helium ions to hydrogen ions is 1:(4-8); the second bonding method includes a room temperature bonding method or a hydrophilic bonding method; the parameters of the room temperature bonding method include: a bonding temperature of 20-30°C, an absolute vacuum degree of ≤1×10 -6 Pa, bonding pressure is 20-80kN; the parameters of the hydrophilic bonding method include: activation gas including oxygen and nitrogen, power is 50-150W, bonding pressure is 200-8000N, bonding time is 10-100s; (4) performing heat treatment and peeling on the bonded body along the ion implantation layer, and then removing the residual silicon oxide layer on the surface of the semi-insulating silicon carbide layer by polishing to obtain the heterogeneous composite substrate; the heterogeneous composite substrate includes a glass substrate and a semi-insulating silicon carbide layer stacked together; The temperature of the heat treatment stripping is 300-500° C., the time of the heat treatment stripping is 1-60 min, and the atmosphere of the heat treatment stripping is an inert atmosphere.

9. A heterogeneous composite substrate, characterized in that: The heterogeneous composite substrate is prepared by the preparation method according to any one of claims 1 to 8.

10. An application of the heterogeneous composite substrate according to claim 9, characterized in that: The heterogeneous composite substrate is used for preparing semiconductor devices.

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