Compression ring assembly, semiconductor process chamber and control method thereof

Abstract

The invention provides a compression ring assembly, a semiconductor process chamber and a control method thereof. The pressing ring assembly comprises an annular body. An annular negative pressure channel is arranged in the annular body in a surrounding mode in the circumferential direction of the annular body, and a suction inlet and a suction outlet are formed in the annular negative pressure channel in the annular body. The annular body can move between a first position and a second position in a lifting mode, and the annular body is used for pressing the edge area of the upper surface of the wafer under the condition that the annular body is located at the first position; in the process that the annular body moves between the first position and the second position, the annular body is used for providing vacuum adsorption force capable of adsorbing the wafer at the suction port, so that the wafer can ascend and descend along with ascending and descending of the annular body, and the wafer adhesion phenomenon caused by residual charges is avoided.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to, but are not limited to, the field of semiconductor processing technology, and in particular, to a pressure ring assembly, a semiconductor process chamber, and a control method thereof. Background Art

[0002] In the semiconductor wafer processing industry, plasma etching equipment uses plasma to etch wafers, typically placed on a process pedestal within a process chamber. To secure the wafer to the pedestal and prevent helium leaks, mechanical clamps, pressing units, or adhesive plates can be used. However, these fixing structures have limited effect on the wafer's stability and temperature control.

[0003] To address these issues, a fixed structure can utilize an electrostatic chuck and a pressure ring. The electrostatic chuck supports, secures, and controls the temperature of the wafer, while the pressure ring further secures the wafer to the electrostatic chuck. The electrostatic chuck is connected to an external power source. Before processing, an electrostatic voltage is supplied to the electrostatic electrodes of the electrostatic chuck to create an electrostatic field on the chuck, thereby attracting the wafer and securing it to the chuck. After processing, the electrostatic voltage is removed to remove the electric field, allowing the wafer to desorb from the chuck.

[0004] However, after the electrostatic voltage is removed from the electrostatic chuck, static charges may remain on both the wafer and the electrostatic chuck due to the varying abilities of wafers made of different materials to accumulate and release charge. This can cause the wafer and chuck to remain attached to each other, leading to wafer sticking. This can easily lead to wafer breakage or wafer tilt when the pneumatic ejector subsequently lifts the wafer. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a pressure ring assembly, a semiconductor process chamber and a control method thereof. The pressure ring assembly controls the air pressure at the suction port through an annular negative pressure channel arranged in the annular body to provide vacuum adsorption force to the upper surface of the wafer, thereby avoiding the wafer sticking due to residual charge, and solving the problem in the related art that the wafer and the electrostatic chuck are still adsorbed to each other due to the electrostatic charge on the wafer and the electrostatic chuck.

[0006] In order to achieve the purpose of the present invention, a pressure ring assembly is provided, which includes an annular body; an annular negative pressure channel is arranged in the annular body along its circumference, and the annular negative pressure channel forms an extraction port and an extraction port on the annular body; the annular body can be raised and lowered and moved between a first position and a second position, and when the annular body is in the first position, the annular body is used to press the edge area of ​​the upper surface of the wafer; during the movement of the annular body between the first position and the second position, the annular body is used to provide a vacuum adsorption force at the extraction port that can adsorb the wafer, so that the wafer can be raised and lowered together with the annular body.

[0007] In some embodiments, it further includes: a negative pressure pipeline, which is connected to the extraction port and extends along the axial direction of the annular body; and a driving member, which is used to drive the negative pressure pipeline to rise or fall, thereby driving the annular body to rise or fall together.

[0008] In some embodiments, it further includes: an air inlet pipeline, one end of which is connected to the annular body, and at least one air outlet is provided on the air inlet pipeline, and the air outlet is used to provide purge gas when the annular body moves to the second position.

[0009] In some embodiments, the gas outlet faces the axis of the annular body.

[0010] In some embodiments, the pressure ring assembly includes a plurality of air inlet pipes connected to the lower surface of the annular body; and the connection points of the plurality of air inlet pipes on the annular body are located on the same circumference.

[0011] In some embodiments, the pressure ring assembly further includes a level detection mechanism for determining the levelness of the wafer, and the level detection mechanism is disposed at a position on the annular body that presses the wafer.

[0012] In some embodiments, an annular cooling channel is arranged around the annular body along its circumference, and the annular body is cooled by transporting a cooling medium to the annular cooling channel; the pressure ring assembly also includes an input pipeline and an output pipeline for inputting and outputting the cooling medium to the annular cooling channel.

[0013] The present invention also provides a semiconductor process chamber, comprising a chamber body, a process base and the above-mentioned pressure ring assembly, wherein the annular body is located on the process base, and the process base is used to carry wafers.

[0014] The present invention also provides a control method for a semiconductor process chamber, which is used for the above-mentioned semiconductor process chamber; the control method includes: controlling the process base to be in a desorption state to release the wafer; driving the pressure ring assembly to rise to move away from the wafer; judging whether the process base is desorbing the wafer normally; the pressure ring assembly is used to provide a vacuum adsorption force at the suction port that can adsorb the wafer when the process base is desorbing the wafer abnormally so that the wafer can rise and fall together with the annular body.

[0015] In some embodiments, the pressure ring assembly is further configured to provide a purge gas into the chamber when the process base abnormally desorbs the wafer.

[0016] The present invention has the following beneficial effects:

[0017] The present application relates to a pressure ring assembly, which includes an annular body with an annular negative pressure channel provided therein, and the annular body can be raised and lowered between a first position and a second position. When the annular body is in the first position, the annular body is used to press the edge area of ​​the upper surface of the wafer to realize the function of the pressure ring assembly to fix the wafer. During the movement of the annular body between the first position and the second position, the annular body is used to provide a vacuum adsorption force capable of adsorbing the wafer at the suction port, so that the wafer can be raised and lowered together with the annular body. Compared with the traditional function of the pressure ring assembly that only uses the pressure ring assembly to fix the wafer in the prior art, the present application expands other functions by deeply exploring the multiple potential functions of the pressure ring assembly. In the present application, the pressure ring assembly is not limited to the role of fixing the wafer, but can provide a vacuum adsorption force capable of adsorbing the wafer at the suction port formed on the annular body through an annular negative pressure channel, so that the wafer can rise and fall together with the annular body, avoiding the wafer sticking due to the adsorption force of the process base due to residual charge, thereby effectively avoiding the wafer sticking caused by incomplete desorption, and further avoiding the problem of wafer damage or tilt deviation caused by the subsequent rise of the ejector pin and the wafer rising.

[0018] Other objects and features of the present invention will become clear by reading the specification, claims and drawings of this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments with reference to the following drawings, in which:

[0020] Figure 1 It is a structural schematic diagram of the annular body and the negative pressure pipeline according to an embodiment of the present invention.

[0021] Figure 2 It is a structural schematic diagram of the annular body and the negative pressure pipeline in another viewing direction according to an embodiment of the present invention.

[0022] Figure 3 It is a structural schematic diagram of an annular negative pressure channel on an annular body according to an embodiment of the present invention.

[0023] Figure 4 It is a structural schematic diagram of a wafer according to an embodiment of the present invention at a first viewing angle.

[0024] Figure 53 is a schematic structural diagram of a wafer according to an embodiment of the present invention at a second viewing angle.

[0025] Figure 6 It is a structural schematic diagram of a wafer according to an embodiment of the present invention from a third viewing angle.

[0026] Figure 7 It is a structural schematic diagram of a negative pressure pipeline according to an embodiment of the present invention.

[0027] Figure 8 It is a structural schematic diagram of the intake pipe according to an embodiment of the present invention.

[0028] Figure 9 Schematic diagram of the lower surface of the annular body according to an embodiment of the present invention.

[0029] Figure 10 Schematic diagram of the relative positional relationship between the reflective sensor and the annular negative pressure channel on the annular body according to an embodiment of the present invention.

[0030] Figure 11 It is a structural schematic diagram of an annular cooling channel on an annular body according to an embodiment of the present invention.

[0031] Figure 12 It is a structural schematic diagram of the input pipeline of an embodiment of the present invention.

[0032] Figure 13 It is a structural schematic diagram of a pressure ring assembly of a semiconductor process chamber according to an embodiment of the present invention rising to a position away from a wafer.

[0033] Figure 14 It is a structural schematic diagram of a pressure ring assembly of a semiconductor process chamber according to an embodiment of the present invention, which is lowered to press the edge area of ​​the upper surface of the wafer.

[0034] Figure 15 Schematic diagram of the connection between the pressure ring assembly and the lower electrode of the semiconductor process chamber according to an embodiment of the present invention.

[0035] Description of main component symbols:

[0036] 10. Semiconductor process chamber; 20. Wafer; 21. Frame; 22. Support member; 23. Bare wafer;

[0037] 200, process base;

[0038] 300, pressing ring assembly; 310, annular body; 320, air intake pipe;

[0039] 311. Annular negative pressure channel; 3111. Extraction inlet; 3112. Extraction outlet;

[0040] 312, annular cooling channel; 3121, inlet; 3122, outlet;

[0041] 313, lower surface;

[0042] 321, air outlet; 322, connection; 323, connection end;

[0043] 331, input pipeline; 3311, connection end; 332, output pipeline; 333, negative pressure pipeline; 3331, negative pressure cavity; 3332, connection end;

[0044] 340, lifting rod;

[0045] 400, reflective sensor; 500, lower electrode; 510, bottom cover; 600, cantilever structure. DETAILED DESCRIPTION

[0046] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limiting the present invention.

[0047] In order to solve the above technical problems, an embodiment of the present application proposes a pressure ring assembly 300. In the related art, the desorption of the wafer mainly relies on reducing the adsorption force of the process base 200 to achieve the release of the wafer 20. However, in some high-precision processes, especially for thin and fragile wafers 20, this method may cause incomplete release of the desorption when there is adhesion between the wafer 20 and the process base 200, that is, the phenomenon of wafer sticking occurs. The embodiment of the present application provides a vacuum adsorption force to the upper surface of the wafer 20 through the pressure ring assembly 300 to avoid the phenomenon of wafer 20 sticking, making the desorption process more controllable.

[0048] In order to better explain this embodiment, the following is described in combination with the accompanying drawings. It should be noted that the structure in the accompanying drawings is only for schematic illustration and does not specifically limit the structure in this embodiment. Other structures derived therefrom are also within the scope of protection of the present invention.

[0049] The pressure ring assembly 300 includes an annular body 310, which can be moved between a first position and a second position. When the annular body 310 is in the first position, the annular body 310 is used to press the edge area of ​​the upper surface of the wafer 20. It should be noted that the wafer 20 in this application includes a frame 21, a support 22 and a bare wafer 23. The frame 21 is provided with a through hole arranged along its axial direction, and a support 22 is provided at the through hole to carry the bare wafer 23 for process processing. For details, please refer to Figures 4 to 6 . Optionally, the annular body 310 is provided with an axial through hole, which is used to expose the bare wafer 23. The annular body 310 is used to press the edge area of ​​the upper surface of the frame 21. Optionally, the support member 22 can be a film. It can be understood that the above-mentioned film has high temperature resistance and a high temperature resistant material can be selected, such as a UV film. The frame 21 can be an annular structure with a certain thickness. For example, the frame 21 can be made of stainless steel. The frame 21 made of stainless steel is more likely to exhibit the characteristic of sticking to the wafer after process treatment in a plasma environment.

[0050] An annular negative pressure channel 311 is disposed circumferentially within the annular body 310 and has an inlet 3111 and an outlet 3112 formed therein. In some embodiments, the inlet 3111 of the annular negative pressure channel 311 is located on the annular body 310 to press against the wafer 20.

[0051] During the movement of the annular body 310 between the first position and the second position, the annular body 310 is used to provide a vacuum suction force at the suction port 3111 to suck the wafer 20, so that the wafer 20 can rise and fall along with the annular body 310. It should be noted that the first position is lower than the second position.

[0052] Compared to the traditional function of only using the pressure ring assembly 300 to fix the wafer 20 in the prior art, the present application has expanded other functions by deeply exploring the multiple potential functions of the pressure ring assembly 300. In this embodiment, the pressure ring assembly 300 is not limited to the function of fixing the wafer 20, but can extract the gas in the annular negative pressure channel 311 through a vacuum pump to provide a vacuum adsorption force that can adsorb the wafer 20 at the suction port 3111 formed on the annular body 310, so that the wafer 20 can rise and fall together with the annular body 310, thereby solving the sticking phenomenon of the wafer 20, thereby effectively avoiding the sticking phenomenon of the wafer 20 caused by incomplete desorption. The advantages of the embodiments of the present application are reflected in many aspects. First, the pressure ring assembly 300 is used to provide a vacuum adsorption force to the wafer 20, which effectively avoids the sticking phenomenon that may occur in the desorption process of the wafer 20, thereby improving the production yield of the wafer 20. Secondly, the function of the pressure ring assembly 300 is expanded without introducing additional complex mechanisms, thereby reducing the production cost.

[0053] The pressure ring assembly 300 further includes a negative pressure pipe 333, which is connected to the extraction port 3112. The extraction port 3112 of the annular negative pressure channel 311 is connected to a vacuum device through the negative pressure pipe 333. For details, see Figures 1 to 3 Optionally, a seal, such as a sealing ring, is provided at the connection between the negative pressure pipeline 333 and the annular body 310 to enhance the adsorption force of the annular negative pressure channel 311 .

[0054] Optionally, the vacuum pump is located outside the semiconductor process chamber 10. The vacuum pump is used to generate a vacuum suction force on the upper surface of the wafer 20 that can adsorb the wafer 20, so that the wafer 20 can rise along with the annular body 310 to leave the process base 200.

[0055] In some embodiments, the pressure ring assembly 300 further includes a driving member, which is used to drive the negative pressure pipeline 333 to rise or fall, thereby driving the annular body 310 to rise or fall together.

[0056] In a specific embodiment, after the wafer 20 completes adsorption and desorption on the process base 200, when the robot is about to take the wafer 20 from the process base 200, the driving component drives the negative pressure pipeline to rise or fall, thereby driving the annular body to rise or fall together, thereby allowing the wafer 20 to rise and fall together with the annular body 310 under the action of the vacuum adsorption force, so as to solve the problem of wafer sticking.

[0057] The negative pressure pipe 333 is arranged to extend along the axial direction of the annular body 310 to ensure the stable rise or fall of the annular body 310, thereby providing a more reliable vacuum adsorption force for the wafer 20 during the process, improving the process efficiency and the preparation quality of the wafer 20. The negative pressure pipe 333 can be set as a rod-shaped structure, which can be seen in FIG. Figure 1 、 2 and 7. By extending it in an axial direction parallel to the annular body 310, the stable rise or fall of the annular body 310 during the process is effectively guaranteed. The rod-shaped structure makes the negative pressure pipeline 333 not only an exhaust pipeline, but also a supporting structure, which not only enhances the structural stability of the entire pressure ring assembly 300, but also improves the precise control of the wafer 20 during the rise or fall process, thereby ensuring the efficiency and reliability of the process. Specifically, a negative pressure cavity 3331 is provided inside the negative pressure pipeline 333, and the negative pressure cavity 3331 is used for gas flow.

[0058] Optionally, a connection end 3332 is provided at one-Nth of the axial length of the negative pressure pipeline 333 , the connection end 3332 being connected to a flexible tube, which in turn is connected to a vacuum pump. Optionally, the connection end 3332 may be provided at one-half of the negative pressure pipeline 333 .

[0059] In this embodiment, the purge gas that is freed to the wafer 20 produces a dynamic effect, that is, through the direction and speed of the gas flow, local high-pressure and low-pressure areas are formed on the surface of the wafer 20, thereby producing a physical flushing effect to disturb the residual charge on the wafer 20, thereby avoiding the wafer 20 from sticking.

[0060] Optionally, the purge gas may include, but is not limited to, inert gases such as argon or nitrogen. For the sake of convenience, nitrogen (N2) is used as the purge gas to explain the embodiments of the present invention. In an embodiment of the present invention, the pressure ring assembly 300 can provide purge gas to the inside of the cavity at a preset flow rate for a preset time. The preset time can be determined according to actual needs. Specifically, the preset duration can be set to 0.5s to 10s. Preferably, the preset duration is set to 3s. In an embodiment of the present invention, the preset flow rate of the purge gas can be 100sccm to 2000sccm.

[0061] In the embodiment of the present application, the excavation pressure ring assembly 300 not only secures the wafer 20 to the process pedestal 200, but also provides a purge gas to the interior of the semiconductor process chamber 10, effectively preventing wafer 20 from sticking. The introduction of the purge gas through the pressure ring assembly 300 allows for more precise control of the process, ensuring the reliable fixation of the wafer 20 on the process pedestal 200 while reducing the adhesion between the wafer 20 and the process pedestal 200 and minimizing the resistance to wafer 20 desorption.

[0062] The pressure ring assembly 300 further includes an air inlet pipe 320, one end of which is connected to a gas source capable of providing a purge gas, and the other end of which is connected to the annular body 310. Figure 1 and Figure 2 The air inlet pipe 320 is provided with at least one air outlet 321, and the air outlet 321 is used to provide purge gas when the annular body 310 moves to the second position. Figure 8 .

[0063] In some embodiments, the air inlet pipe 320 is configured as a rod-shaped structure extending in parallel to the axial direction of the annular body 310. For details, see Figure 8 Specifically, a cavity is provided inside the rod-shaped structure for the purge gas to flow. By providing the cavity inside the rod-shaped structure, the purge gas is effectively transferred and evenly distributed.

[0064] In addition, a connecting end 323 is provided at one Nth of the axial length of the air inlet pipe 320, and the connecting end 323 is connected to a flexible tube, and the flexible tube is connected to a gas source capable of providing a purge gas. A flexible connection is established between the air inlet pipe 320 and the external gas source, which provides the possibility for the adjustability and flexibility of the pressure ring assembly 300. The position of the connecting end 323 can be adjusted according to specific needs to adapt to different process conditions and wafer 20 sizes. In addition, the choice of the position of the connecting end 323 can also affect the flow characteristics of the purge gas to a certain extent, making the device more adaptable to diverse process requirements. Optionally, the connecting end 323 can also be provided at one-half of the air inlet pipe 320 to further optimize the flow of the purge gas. The flexibility of the connecting end 323 on the air inlet pipe 320 enables staff to make adjustments according to specific circumstances to achieve the best process effect.

[0065] The air inlet line 320 may be provided with a plurality of air outlets 321, which are sequentially and spaced apart along the axial direction of the air inlet line 320. Optionally, the plurality of air outlets 321 are located on a side of the air inlet line 320 close to the annular body 310. Optionally, the plurality of air outlets 321 are evenly spaced apart to provide uniform airflow. Preferably, the air outlets 321 face the axis of the annular body 310 to allow the purge gas to flow more quickly toward the wafer 20.

[0066] The pressure ring assembly 300 includes a plurality of air inlet pipes 320, and the air inlet pipes 320 are connected to the lower surface 313 of the annular body 310. Figure 9 The connections 322 of the multiple air inlet pipes 320 on the annular body 310 are located on the same circumference. Optionally, the center of the circle on which the connections 322 of the multiple air inlet pipes 320 are located is coaxial with the axis of the through hole in the annular body 310. In some embodiments, each air inlet pipe 320 is connected to a flow meter for controlling the flow rate of the purge gas from the gas source to each air inlet pipe 320.

[0067] Each air intake pipe 320 is connected to the driving member through a lifting rod 340. The air intake pipe 320 can rise or fall together with the rising or falling of the driving member. Figure 13 Optionally, the driving member may include a motor.

[0068] In a specific embodiment, the pressure ring assembly 300 includes three air inlet pipes 320 . The connections 322 of the three air inlet pipes 320 on the annular body 310 are located on the same circle, and the three connections 322 are evenly spaced.

[0069] The pressure ring assembly 300 also includes a level detection mechanism, which is used to determine the levelness of the wafer 20 to determine whether the wafer 20 is sticking. If the wafer 20 is tilted, it indicates that the wafer 20 is sticking. The level detection mechanism is located on the annular body 310 where it presses against the wafer 20.

[0070] The level detection mechanism includes a plurality of reflective sensors 400, which can be found in Figure 10. The reflective sensor 400 is a type of sensor that uses a reflected signal to detect a target object, including a transmitter and a receiver, and determines whether the wafer 20 is tilted by measuring the reflection of the signal at the emission point on the frame 21 of the wafer 20. The reflective sensor 400 is used to emit light to the frame 21 of the wafer 20 and receive the reflected light reflected back by the frame 21. The reflective sensor 400 is used to determine whether the wafer 20 is tilted or exists based on the relationship between the light intensity value of the reflected light and a preset threshold set in advance. Specifically, when the intensity of the reflected light is less than the preset threshold, an alarm can be triggered. It can be understood that if one of the multiple reflective sensors 400 triggers an alarm, it can be determined that the state of the wafer 20 is abnormal.

[0071] See also Figure 10 Multiple reflective sensors 400 are located near the annular negative pressure channel 311. In some embodiments, the multiple reflective sensors 400 are located on the same circle, and the center of the circle is coaxial with the axis of the through hole in the annular body 310. In one specific embodiment, the level detection mechanism includes three reflective sensors 400.

[0072] See also Figure 11 An annular cooling channel 312 is provided in the annular body 310 along its circumference. By supplying a cooling medium to the annular cooling channel 312 , the annular body 310 is cooled, thereby reducing the temperature of the annular body 310 .

[0073] In actual application, the annular body 310 uses its own gravity to press the edge area of ​​the upper surface of the wafer 20, and fixes the wafer 20 on the process base 200 by mechanical fixation. The annular cooling channel 312 in the annular body 310 is a closed annular structure. An inlet 3121 and an outlet 3122 connected to the annular cooling channel 312 are provided on the bottom surface of the annular body 310, and the two are respectively located at different positions on the annular cooling channel 312. After the cooling medium flows into the annular cooling channel 312 from the inlet 3121, it will automatically split into two paths, and then converge at the outlet 3122, and then flow out of the annular cooling channel 312, thereby realizing the circulation of the cooling medium.

[0074] The number of the above-mentioned annular cooling channels 312 is one, but the present application is not limited thereto. In practical applications, the number of the annular cooling channels 312 can also be two, three or more than four, and the annular cooling channels 312 are concentric rings with each other.

[0075] The pressure ring assembly 300 also includes a delivery pipeline for inputting and outputting a cooling medium to the above-mentioned annular cooling channel 312. In this embodiment, since the annular body 310 will rise or fall, this requires that the delivery pipeline be able to rise and fall with the annular body 310 to ensure that the delivery pipeline and the annular body 310 are always connected together. The delivery pipeline includes an input pipeline 331 and an output pipeline 332, which are respectively connected to the inlet 3121 and the outlet 3122, and are respectively connected to the output end and the input end of the heat exchanger. The heat exchanger provides cooling medium to the input pipeline 331 through the output end and recovers and re-cools the cooling medium from the output pipeline 332 through the input end. In a specific embodiment, a seal is provided at the connection between the input pipeline 331 and the output pipeline 332 and the annular body 310 to prevent leakage of the cooling medium.

[0076] See also Figure 12 Input pipeline 331 is configured as a rod-shaped structure extending axially parallel to process base 200 and having an internal cavity for the flow of cooling medium. A connection end 3311 is provided at one-Nth of the axial length of input pipeline 331. Connection end 3311 is connected to a flexible tube, which is connected to the output end of the heat exchanger. Optionally, connection end 3311 can be provided at one-half of input pipeline 331. It should be noted that the structure of output pipeline 332 is identical to that of input pipeline 331 and will not be further described here.

[0077] Optionally, the heat exchanger is located outside the semiconductor process chamber 10. The temperature of the cooling medium is always at room temperature 25°C to ensure that the reflective sensor 400 is in an optimal working environment and to avoid failure of the reflective sensor 400 due to changes in ambient temperature.

[0078] The semiconductor processing chamber 10 includes a chamber body, a process pedestal 200, and the pressure ring assembly 300 of the above-described embodiment. The annular body 310 is positioned on the process pedestal 200. The process pedestal 200 is used to support the wafer 20 and has a support surface for supporting the wafer 20. The process pedestal 200 is used to secure the wafer 20 in an adsorption state and to release the wafer 20 in a desorption state. The pressure ring assembly 300 is used to assist the process pedestal 200 in securing and releasing the wafer 20.

[0079] Specifically, the pressure ring assembly 300 is used to assist the process base 200 in releasing the wafer 20 when it rises to leave the edge area of ​​the upper surface of the wafer 20. Figure 13 The pressure ring assembly 300 is used to assist the process base 200 in fixing the wafer 20 when it descends to press the edge area of ​​the upper surface of the wafer 20. Figure 14 .

[0080] The semiconductor process chamber 10 further includes a lower electrode 500 and a cantilever structure 600. The annular body 310 is located above the lower electrode 500. The cantilever structure 600 is used to fix the lower electrode 500. The negative pressure pipe 333 is set through the cantilever structure 600 and is connected to the vacuum device outside. Figure 15 . It can be understood that the specific function of the lower electrode 500 depends on the process requirements of the semiconductor process chamber 10. For example, in the etching process, the lower electrode 500 is used to apply an electric field or a heat source. In some processes, the lower electrode 500 can be used to generate an electric field to affect the movement and distribution of the etching material. In other processes, the lower electrode 500 may be used to heat the wafer 20 to promote the diffusion or reaction of the etching material. Optionally, the lower electrode 500 is connected to the process base 200 through the bottom cover 510.

[0081] The semiconductor process chamber 10 further includes an abnormality detection mechanism disposed on the process pedestal 200. The pressure ring assembly 300 is used to assist the process pedestal 200 in releasing the wafer 20 when the abnormality detection mechanism determines that the process pedestal 200 is abnormal in desorption of the wafer 20.

[0082] In a specific embodiment, the abnormality detection mechanism includes a helium flow component, a flow detection component, and a control component. The helium flow component is used to pass helium into the gap between the wafer 20 and the process base 200 when the pressure ring assembly 300 rises. The flow detection component is used to measure the helium flow value around the wafer 20 after a certain period of helium flow, and compare the measured helium flow value with a preset first preset threshold and a second preset threshold. When the helium flow value is less than the first preset threshold, the wafer 20 is completely adhered; when the helium flow value is less than or equal to the second preset threshold and greater than or equal to the second preset threshold, the wafer 20 is partially adhered; when the helium flow value is greater than the second preset threshold, the wafer 20 is not adhered.

[0083] In some embodiments, the semiconductor process chamber 10 further includes ejector pins. The pressure ring assembly 300 provided in the embodiments of the present application can assist the process base 200 in releasing the wafer 20, thereby preventing the wafer 20 from being deflected by the pins due to wafer sticking, thereby greatly ensuring the stable lifting of the wafer 20 and improving the transmission stability.

[0084] The embodiment of the present application further provides a control method for a semiconductor process chamber 10, wherein the semiconductor process chamber 10 includes a cavity and a process base 200. The control method includes steps 1 to 4.

[0085] Step 1: Control the process base 200 to be in a desorption state to release the wafer 20 .

[0086] Step 2: driving the pressure ring assembly 300 upward to move away from the wafer 20 .

[0087] Step 3: Determine whether the process base 200 desorbs the wafer 20 normally.

[0088] Step 4: The pressure ring assembly 300 is used to provide a vacuum adsorption force at the suction port 3111 to adsorb the wafer 20 when the process base 200 desorbs the wafer 20 abnormally, so that the wafer 20 can rise and fall together with the annular body 310.

[0089] It should be noted that the pressure ring assembly 300 is mainly used after the process is completed and before the ejector pin rises to prevent the wafer 20 from sticking (including partial sticking and full sticking) and causing the ejector pin to support the wafer 20 to be damaged or tilted when rising, thereby causing the robot to be unable to remove the wafer 20 normally, or the wafer 20 can be removed but the offset of the wafer 20 is too large, resulting in a transfer failure, or even causing the wafer 20 to be damaged.

[0090] In an optional embodiment, the control method may further include step 5. Step 5: The pressure ring assembly 300 is further configured to provide a purge gas into the chamber when the process base 200 desorbs the wafer 20 abnormally. It should be noted that steps 4 and 5 may be performed either or simultaneously.

[0091] The following is an illustrative example. After the process is completed, the pressing ring assembly 300 is raised, and the abnormality detection mechanism is used to determine whether the wafer is stuck and the sticking condition.

[0092] 1: When the film is not sticky, the ejector rises and the robot takes the film.

[0093] 2: When the wafer is stuck, the pressure ring assembly 300 provides nitrogen at a first preset flow rate for a first preset time. Subsequently, the abnormality detection mechanism is used again to determine whether the wafer is stuck and the extent of the sticking.

[0094] The first preset flow rate is greater than or equal to 60 sccm and less than or equal to 140 sccm. Preferably, the first preset flow rate is equal to 100 sccm. The first preset time is greater than or equal to 25 seconds and less than or equal to 35 seconds. Preferably, the first preset time can be set to 30 seconds.

[0095] 2.1: When the film is not sticky, the ejector rises and the robot takes the film.

[0096] 2.2: During partial wafer bonding, the pressure ring assembly 300 provides nitrogen gas at a first preset flow rate for a second preset time and the ejector pin rises. Subsequently, the level detection mechanism is used to determine the level of the wafer 20.

[0097] 2.2.1: When the wafer 20 is level, the robot takes the wafer.

[0098] 2.2.2: When the wafer 20 is abnormally level, the ejector pins descend until the wafer 20 lands on the process pedestal 200. The pressure ring assembly 300 descends to press against the edge area of ​​the upper surface of the wafer 20. After the pressure inside the semiconductor process chamber 10 is controlled to stabilize, the vacuum pumping device is turned on, allowing the annular body 310 to provide vacuum suction to the wafer 20. For a period of time, such as 5 seconds, the pressure ring assembly 300 rises and the air inlet line 320 provides purge gas. The rise of the pressure ring assembly 300 drives the wafer 20 upwards. At the same time, the air inlet line 320 provides purge gas to prevent subsequent wafers 20 from sticking. The air inlet line 320 stops providing purge gas, and the pressure ring assembly 300 descends, driving the wafer 20 downwards. After the wafer 20 lands on the process pedestal 200, the vacuum pumping device stops and stops controlling the pressure inside the chamber. The ejector pins rise, and the robot arm removes the wafer.

[0099] When the levelness of the wafer 20 is abnormal, it usually means that the wafer 20 is in a tilted state or has deviated from the detection range of the level detection mechanism.

[0100] 2.3: When the wafer is fully bonded, the air inlet line 320 provides purge gas at a second preset flow rate and controls the internal pressure of the chamber until it stabilizes. The vacuum pump is activated, and the pressure ring assembly 300 rises, lifting the wafer 20 along with it. After a period of time, for example, 5 seconds, the ring body 310 descends until the wafer 20 lands on the process pedestal 200. The vacuum pump is shut down, and pressure control within the chamber ceases. The ejector pins rise, and the robotic arm removes the wafer.

[0101] The second preset flow rate is greater than or equal to 400 sccm and less than or equal to 600 sccm. Preferably, the second preset flow rate is 500 sccm.

[0102] In an embodiment of the present invention, a hierarchical control method is provided to achieve three-level system control of the pressure ring assembly 300, providing significant advantages in stability and energy efficiency during the transfer of the wafer 20. Typically, the first level of control is for the pressure ring assembly 300 to provide N2 at a relatively low flow rate, the second level of control is for the pressure ring assembly 300 to provide N2 at a relatively low flow rate + vacuum adsorption of the wafer 20, and the third level of control is for the pressure ring assembly 300 to provide N2 at a relatively high flow rate + vacuum adsorption of the wafer 20. This multi-level control method not only achieves charge removal and smooth needle lifting, but also responds to different process requirements in a highly flexible manner, ensuring transmission stability while effectively reducing energy consumption and achieving the goal of energy conservation.

[0103] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features specified as "first" or "second" may explicitly or implicitly include one or more of the specified features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0104] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections, or mutual communication; direct connections or indirect connections through an intermediate medium; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0105] Throughout this specification, reference to terms such as "one embodiment," "certain embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, illustrative descriptions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0106] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A pressure ring assembly, used in semiconductor equipment, characterized in that: The pressure ring assembly includes an annular body, An annular negative pressure channel is provided in the annular body along its circumference, and the annular negative pressure channel is formed with an extraction inlet and an extraction outlet on the annular body; The annular body can be lifted and moved between a first position and a second position. When the annular body is in the first position, the annular body is used to press the edge area of ​​the upper surface of the wafer. During the movement of the annular body between the first position and the second position, the annular body is used to provide a vacuum adsorption force at the suction port that can adsorb the wafer, so that the wafer can be lifted and lowered together with the annular body.

2. The pressure ring assembly according to claim 1, characterized in that Also includes: a negative pressure pipeline, connected to the extraction port and extending along the axial direction of the annular body; A driving member is used to drive the negative pressure pipeline to rise or fall, so as to drive the annular body to rise or fall together.

3. The pressure ring assembly according to claim 1, characterized in that Also includes: An air inlet pipeline, one end of which is connected to the annular body, and at least one air outlet is provided on the air inlet pipeline, and the air outlet is used to provide purge gas when the annular body moves to the second position.

4. The pressure ring assembly according to claim 3, characterized in that The air outlet faces the axis of the annular body.

5. The pressure ring assembly according to claim 3, characterized in that: The pressure ring assembly includes a plurality of the air intake pipelines, and the air intake pipelines are connected to the lower surface of the annular body; the connection points of the plurality of air intake pipelines on the annular body are located on the same circumference.

6. The pressure ring assembly according to claim 1, characterized in that The pressure ring assembly further includes a level detection mechanism for determining the levelness of the wafer, and the level detection mechanism is arranged at a position on the annular body that presses the wafer.

7. The pressure ring assembly according to claim 1, characterized in that An annular cooling channel is provided in the annular body along its circumference, and cooling of the annular body is achieved by supplying a cooling medium to the annular cooling channel; The pressure ring assembly further includes an input pipeline and an output pipeline for inputting and outputting cooling medium to and from the annular cooling channel.

8. A semiconductor process chamber, characterized in that: It comprises a cavity, a process base and the pressure ring assembly according to any one of claims 1 to 7, wherein the annular body is located on the process base, and the process base is used to carry a wafer.

9. A method for controlling a semiconductor process chamber, characterized in that: For the semiconductor process chamber according to claim 8; the control method comprises: Controlling the process base to be in a desorption state to release the wafer; driving the pressure ring assembly to rise and away from the wafer; Determining whether the process base desorbs the wafer normally; The pressure ring assembly is used to provide a vacuum adsorption force capable of adsorbing the wafer at the suction port when the process base desorbs the wafer abnormally so that the wafer can be lifted and lowered together with the annular body.

10. The control method according to claim 9, characterized in that: Also includes: The pressure ring assembly is further used to provide purge gas into the chamber when the process base desorbs the wafer abnormally.

Images