Component carrier and method for manufacturing same

Abstract

The present application provides a component carrier (100) having a stack (102) and a method of manufacturing the same wherein the stack (102) comprises: i) at least one electrically insulating layer structure (106) and at least one electrically conductive layer structure (104); ii) a stack side wall (107) wherein at least a portion (110) of the stack side wall tapers with respect to the stack direction (Z); and iii) at least one inorganic layer structure (108), the inorganic layer structure (108) being exposed in the lateral direction and at least partially forming the stack side wall (107).

Description

Technical Field

[0001] The present invention relates to a component carrier having a stack comprising at least one electrically insulating layer structure and at least one electrically conductive layer structure. The stack further comprises stack sidewalls, wherein at least a portion of the stack sidewalls tapers relative to the stacking direction. The stack further comprises at least one inorganic layer structure that is laterally exposed and at least partially forms the stack sidewalls. Furthermore, the present invention relates to a method for manufacturing the component carrier. Furthermore, the present invention relates to a method for manufacturing the component carrier by dividing a component carrier preform into a plurality of component carriers.

[0002] The present invention may therefore relate to the technical field of component carriers, such as printed circuit boards or IC substrates, and the production of component carriers. Background Art

[0003] Against the backdrop of the ever-increasing product functionality of component carriers equipped with one or more electronic components, the increasing miniaturization of such electronic components, and the increasing number of electronic components to be mounted on component carriers, such as printed circuit boards, increasingly powerful array-like components or packages with a plurality of electronic components are being used. These array-like components or packages have a plurality of contacts or connections, with the spacing between these contacts becoming increasingly smaller. At the same time, component carriers must be mechanically robust and electrically reliable in order to be able to operate even under harsh conditions.

[0004] In particular, when using inorganic layer structures, forming an efficient and reliable stack with respect to the component carrier can still be considered a challenge. From a technical and economic perspective, such inorganic layer structures are becoming increasingly interesting. For example, glass layer structures (glass cores) can offer particularly advantageous thermal properties. Because glass is insensitive to heat, it is unlikely to change due to heat, and therefore has little expansion or contraction.

[0005] Component carriers, such as printed circuit boards, are often manufactured as part of a component carrier preform (so-called panel), wherein a plurality of component carriers are manufactured (e.g. laminated) simultaneously. After this process, the component carrier preform is separated (also called singulated, cut) into a plurality of individual component carriers.

[0006] However, inorganic layer structures (especially glass) as described above are still considered to be a challenge in such separation processes.

[0007] Figure 2A schematic cross-section of two separate component carriers 200, which have been penetrated after separation according to the prior art, is shown. Each component carrier 200 comprises an electrically insulating layer structure 206 and an electrically conductive layer structure 204 arranged between the electrically insulating layer structures 206. An inorganic layer structure 208 is arranged to be positioned 204 between the electrically insulating layer structure 206 and at least two electrically conductive layer structures and to form a core layer. The side walls of the stack are straight relative to one another in the stacking direction Z. Separation is accomplished, for example, by a cutting / drilling process. As can be seen, the inorganic layer structure 208 is not exposed at the side walls of the stack. Instead, another material portion 210, such as a resin portion, is provided. However, this other material portion 210 represents additional but necessary cost and effort to avoid cracks in the inorganic layer structure 208 during the separation process.

[0008] Current stacks formed using conventional techniques can be susceptible to dielectric degradation, delamination, and difficulty mitigating glass damage, particularly cracking. There is a continuing industry trend toward smaller structures on the one hand and higher signal rates / frequencies on the other. Therefore, the quality and performance of the component carrier's formed stack, particularly the inorganic layer structures, can be critical. Summary of the Invention

[0009] It may be desirable to provide a component carrier having an inorganic layer structure in an efficient and robust manner.

[0010] A component carrier and a method of production are described.

[0011] According to an aspect of the present invention, there is provided a component carrier having a stack, wherein the stack comprises:

[0012] i) at least one electrically insulating layer structure;

[0013] ii) at least one electrically conductive layer structure;

[0014] iii) a stack sidewall (lateral wall), wherein at least a portion of the stack sidewall (e.g., a portion of the insulating layer structure / conductive layer structure and / or inorganic layer structure) tapers relative to the stacking direction (thickness direction of the stack, along Z); and

[0015] iv) at least one inorganic layer structure (eg, a glass core) that is laterally exposed and at least partially forms the stack sidewalls.

[0016] According to another aspect of the present invention, a method for manufacturing a component carrier is provided, wherein the method comprises:

[0017] i) providing a stack having at least one electrically insulating layer structure and at least one electrically conductive layer structure; ii) providing the stack with a stack sidewall (during the separation process), wherein at least a portion of the stack sidewall is tapered relative to the stacking direction (in particular caused by laser drilling); and

[0018] iii) providing the stack with at least one inorganic layer structure, wherein the inorganic layer structure is formed so as to be exposed in the laterally direction and at least partially forms the sidewalls of the stack (in particular also separated by a laser drilling process).

[0019] According to another aspect of the invention, a method for producing a component carrier is described, the method comprising:

[0020] Providing component carrier prefabrication (e.g., panels);

[0021] Dividing the component carrier preform into a plurality of component carriers,

[0022] Therein, at least one component carrier as described above is provided and / or in which a method as described above is carried out.

[0023] In the present context, the term "component carrier" can refer to the final component carrier product. The term "component carrier preform" can refer to a component carrier in production, in other words, a semi-finished product. In one example, a component carrier preform can be a panel consisting of multiple semi-finished component carriers manufactured together. In the final stage, the panel can be separated / cut / diced into multiple final component carrier products.

[0024] In an embodiment, the "stack" of a component carrier comprises at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier can be a laminate of the mentioned electrically insulating layer structure and the electrically conductive layer structure, the laminate being formed in particular by applying mechanical pressure and / or heat energy. The mentioned stack can provide a plate-like component carrier that can provide a large mounting surface for additional components. In an example, the stack can still be very thin and compact. In another example, the stack can be very thick for high-density products. The stacking direction (height / thickness) can be arranged in the vertical direction z. In addition, the stacking direction can be perpendicular to the main extension of the (plate-like) component carrier in two directions (along x and y). In an example, all layers of the component carrier can form a stack. In another example, only a portion of the layers of the component carrier forms a stack.

[0025] In this document, the term "sidewall" may particularly refer to the lateral boundaries of the stack. The lateral boundaries may also include boundaries of the stack, in particular boundaries of the stack that are exposed in the lateral direction. The lateral boundaries of the stack may also include boundaries that are not exposed in the lateral direction, in particular boundaries that are formed in a manner adjacent to, preferably abutting, another material portion. Specifically, the term "stack sidewall" may also include edge structures of the (glass) substrate and / or edge structures of (parts of) the stacked layers of the stack.

[0026] In this context, the term "layer structure" may particularly refer to a continuous or discontinuous layer (or separate islands in the same plane) of electrically conductive and / or insulating material. A plurality of such layers placed parallel to one another may form a stack in the vertical direction.

[0027] In the context of this document, the term "inorganic layer structure" can particularly refer to a layer structure comprising an inorganic material, such as an inorganic compound. In particular, the dielectric material of the inorganic layer structure or even the entire inorganic layer structure can be made solely of inorganic material or at least exclusively of inorganic material. In another embodiment, the inorganic layer structure can include an inorganic dielectric material and another dielectric material. The inorganic compound can be a compound lacking carbon-hydrogen bonds or a compound that is not an organic compound. In an example, the inorganic layer structure can include glass, such as silicon-based glass, particularly soda-lime glass, and / or borosilicate glass, and / or aluminosilicate glass, and / or lithium silicate glass, and / or alkali-free glass or quartz. In another example, the inorganic layer structure can include ceramic materials such as aluminum nitride and / or aluminum oxide and / or silicon nitride and / or boron nitride and / or tungsten containing ceramic materials. However, in another example, the inorganic layer structure can include semiconductor materials such as silicon and / or germanium and / or silicon oxide and / or germanium oxide and / or silicon carbide and / or gallium nitride. In another embodiment, the inorganic layer structure may include (elemental) metals and / or metal alloys such as copper and / or tin and / or bronze. In yet another embodiment, the inorganic layer structure may include inorganic materials not listed in the above examples, such as: MoS2, CuGaO2, AgAlO2, LiGaTe2, AgInSe2, CuFeS2, BeO.

[0028] According to an exemplary embodiment, the present invention may be based on the following concept: when at least a portion of the sidewall of the stack is tapered relative to the stacking direction, and the inorganic layer structure is exposed in the lateral direction (compared to the prior art), the inorganic layer structure is exposed in the lateral direction. Figure 2 ) and at least partially forming the stack sidewalls, a component carrier with an inorganic layer structure can be provided / produced in a cost-effective and robust (smooth) manner.

[0029] The specific architecture of the sidewalls of the component carrier described above reflects a particularly advantageous manufacturing process for laser cutting from two different sides of the panel being produced (from above and from below). As described in detail, for example, with reference to FIG3 , various methods are possible, depending on the desired application. For example, the laser cutting can first be performed only through the stacked layers and then through the inorganic layer structure (core layer).

[0030] The inventors were surprised to find that this method can achieve an efficient and reliable cutting process for stacked parts of component carriers including inorganic layer structures, because this method can change the high stress point from the center of the inorganic layer structure to the joint between the inorganic layer structure and the electrical insulation layer structure, so that the stress inside the inorganic layer structure is lower, and thus the risk of cracking of the inorganic layer structure, especially horizontal cracking inside the inorganic layer structure, can be significantly reduced after the component carrier is singulated (for example, during cutting, milling (routing), and laser drilling).

[0031] At the same time, the method can also reduce the stress of the joint, thereby reducing the risk of cracks in the joint and / or surface of the inorganic structure. In addition, the method and product structure can also reduce the risk of delamination between the electrically insulating structure and the inorganic layer structure. At the same time, it can provide the important advantage of reducing the saw street distance (the cutting width can be reduced from 250μm-300μm to less than 100μm), so there is no need for an additional reference design for cutting.

[0032] Conventionally, either the breakage of the inorganic layer structure during separation had to be accepted or expensive additional protective materials had to be provided (see e.g. Figure 2 ). However, by the method proposed herein, efficient cutting can be achieved, thereby forming lateral sidewalls of the stack that are (at least partially) tapered and comprise exposed inorganic layer structures.

[0033] The method described can be implemented in a simple manner into existing production lines.

[0034] Exemplary embodiments

[0035] Generally speaking, it is known to those skilled in the art that CTE mismatch can lead to internal stress in materials. In component carrier stacks comprising inorganic and organic materials, there may be a large CTE mismatch, particularly a CTE mismatch between the inorganic layer structure and the electrical insulating layer structure (the mismatch difference can be as little as 15 ppm). When the inorganic layer structure and the electrical insulating layer structure are heat treated, the electrical insulating layer structure is prone to expansion and contraction, but the inorganic layer structure is much more stable, so stress is generated and accumulated in the inorganic material. In addition, cutting can also generate stress due to mechanical strength.

[0036] In an embodiment, the tapered portion of the stack sidewall includes or consists of an exposed portion of the inorganic layer structure. By tapering the stack sidewall including the exposed portion of the inorganic layer structure, the lateral extent of the inorganic layer structure in the direction of the junction between the inorganic layer structure and the electrically insulating layer structure can be reduced. This can have the advantage of reducing stress in the inorganic material and shifting the high stress point to the junction between the inorganic layer structure and the electrically insulating layer structure.

[0037] In an embodiment, the tapered portion of the stack sidewall includes two sub-portions arranged adjacent to each other, wherein the surface of each sub-portion is tapered, in particular wherein the surfaces taper away from each other. In particular, the sub-portions may meet at the point portion of the maximum lateral extension of the stack sidewall. By tapering the surfaces away from each other, the lateral extent of the stack sidewall may be reduced in particular in the direction of the junction between the inorganic layer structure and the electrically insulating layer structure. Thus, it is possible to reduce the stress generated in the inorganic layer structure due to high stress points and transferred to the junction between the various sub-portions between the inorganic layer structure and the electrically insulating layer structure. This can bring the advantage of reducing horizontal cracks in the glass substrate after dicing.

[0038] By adopting the component carrier structure of the cutting method, the high stress point is changed to the joint between the inorganic layer structure and the electrical insulating layer structure of the stacked parts, and cracks will not be generated inside the inorganic layer structure. In addition, the cutting method can also reduce the stress accumulated on the joint, which means that damage to the joint can be avoided, especially when the cutting method is applied by laser ablation. Even if the joint is damaged, it will not cause damage to the entire product because the method is only used for segmentation and the damaged area is an inactive area. In addition, the damage should be small and can be alleviated by other methods for final packaging. In addition, the high stress point inside the inorganic layer structure is changed to the two joints joined to the front side surface and the back side surface, and the accumulated stress can be distributed and divided into these two points.

[0039] In an embodiment, the lateral extension profile of the inorganic layer structure follows the thickness direction of the stack. In other words, when the profile of the lateral extension of the inorganic layer structure is parallel to the thickness direction of the stack, the profile does not taper. In particular, the sidewalls of the inorganic layer structure can be vertically straight. This embodiment also allows the sidewalls to be flush with the electrically insulating layer structure at the junction. On the other hand, it may also be advantageous to offset the sidewalls at the junction with the electrically insulating layer structure. In particular, the lateral extent of the inorganic layer structure can be greater or less than the lateral extent of the electrically insulating layer structure. This can bring the advantage of exhibiting the uniform lateral extent of the inorganic layer structure. For example, this can facilitate more uniform propagation of electromagnetic signals at the sidewall junction. Cutting using this structure and method means that a high-precision and wide processing cutting window or a larger tolerance of the cutting process can be achieved. In particular, laser ablation can achieve a cutting width accuracy of 1 micron and an overall cutting tolerance of up to 250 microns, which is not achievable with traditional methods and structures.

[0040] In an embodiment, the tapered portion is at least partially formed on at least one layer structure in the layer structure of the stacking piece. In other words, the tapered portion may not be provided for straight stacking pieces, and the tapered portion may be provided on one side of the stacking piece with straight sidewalls and the other side of the stacking piece. This can bring the advantage of the stacking piece with uneven tapered characteristics and the high stress point variation at the junction between the inorganic layer structure and the electrical insulating layer structure, wherein one side of the stacking piece has the tapered portion, and on the other hand, also brings the advantage of keeping the side of the stacking piece having uniform lateral range. Therefore, people can obtain more targeted features in the stacking piece for different technical advantages. Considering the brittleness of the inorganic material (such as glass) that is easy to break, this method and product structure have brought greater flexibility, to ensure the segmentation quality of the component carrier with inorganic material.

[0041] In an embodiment, the tapered portion is defined by the multiple layer structures of the stack. In other words, it is possible to have a mixed portion of an inorganic layer structure, an electrically conductive layer structure, and an electrically insulating layer structure. This can bring the advantage of customizing the stack with different numbers of various layer structures to meet specific needs. This means that the tapered portions can be aligned or misaligned. With this structure, cracks will not appear in the inorganic layer structure, and delamination will not occur between the inorganic layer structure and the stack having the electrically conductive layer structure and the electrically insulating layer structure. In addition, there can be no damaged areas caused by cutting, particularly damaged areas caused by laser ablation, on at least one surface of the inorganic material. Due to the transparency of the inorganic layer structure, laser ablation causes heat energy and laser energy to be transferred from one surface of the inorganic layer structure to the opposite surface of the inorganic layer structure.

[0042] In an embodiment, at least one electrically insulating layer structure defining the tapered portion is different from at least one inorganic layer structure, particularly wherein the at least one electrically insulating layer structure comprises an organic material. In other words, the electrically insulating layer may comprise an organic material such as an epoxy-based stacked material or a polymer compound, while the inorganic layer structure may comprise a material made of glass or quartz. This can bring the advantages of using both inorganic and organic materials to form the stack, combining the organic and inorganic materials in the stack. This can provide the functions required by the electrical material and facilitate shaping. This can provide excellent insulating properties as well as excellent processing characteristics. Therefore, favorable properties can be selectively used.

[0043] Furthermore, from a product functionality and manufacturing perspective, hybrid inorganic and organic materials for the design and production of component carriers can offer significant advantages, as inorganic materials are very flat and thermally stable, meaning finer circuit structures can be achieved with less expansion and contraction. This is highly advantageous for high-performance computing.

[0044] In addition, from an electrical point of view, inorganic materials also have good performance. However, organic materials are traditionally dielectric layers with good dielectric properties in component carriers, but organic materials are sensitive to heat treatment, which means that organic materials are prone to warping and expansion and contraction. The combination of inorganic and organic materials can give play to the advantages of inorganic and organic materials and make up for the shortcomings of the two materials to achieve a balance between production and product functions. Nevertheless, there are still some insurmountable shortcomings, such as the CTE mismatch between the two materials and the brittleness of the inorganic material in some processes. Therefore, the present invention provides a component carrier with a tapered portion at different areas of a product to alleviate the problems caused by the CTE mismatch and the brittleness of the inorganic material, and even compensate for the expansion and contraction of the organic material, and finally obtain a good single product unit after cutting for segmentation by different methods.

[0045] In embodiments, the tapered portion is defined solely by the electrically insulating layer structure. In particular, the tapered portion is uniquely defined by the electrically insulating layer structure. In other words, the stack can be formed without the electrically conductive layer structure. This can result in a stack with excellent insulating properties, depending on the specific application being implemented. Furthermore, this can simplify the manufacturing process, reduce costs, and improve efficiency.

[0046] In an embodiment, the inorganic layer structure includes a lateral extension that is different from the other layer structures of the stack, wherein the lateral extension forms at least one protrusion at the side wall of the stack. In other words, the protrusion can have a lateral extension that is larger than the surrounding layer structure. In particular, the vertical range of the protrusion in the layer structure is equal to or less than the total thickness of the layer structure. The protrusion can be a material portion similar to the surrounding layer structure, or a material portion different from the surrounding layer structure. This means that the protrusion can also be a part of the joint between the layer structure forming the protrusion and the surrounding layer structure of different components. This can bring the advantage of reducing stress even in a layer structure that can include a homogeneous material composition.

[0047] More importantly, this structure and method provide different cutting edges on a component carrier. Not only does it shift the high stress point within the inorganic layer structure to the junction between the inorganic layer structure and the electrically insulating layer structure, significantly reducing the stress within the inorganic layer structure caused by CTE mismatch, but it also eliminates the stress caused by mechanical strength by cutting the component carrier from top to bottom (through milling, dicing, laser drilling, etc.).

[0048] In an embodiment, the protrusion forms at least one step at the edge of the inorganic layer structure. In other words, the protrusion can also form multiple steps at the edge of the inorganic layer structure, so that the inorganic layer structure has the characteristics of a stepped structure. This can bring the advantage of gradually reducing stress, especially for situations where higher manufacturing tolerances are required. This can especially form a profile with a more evenly distributed stress reduction at the edge of the inorganic layer structure. In addition, this provides a solution to eliminate the damage to the opposite surface caused by the heat and energy of the laser ablation transmitted from the other surface due to the transparency of the inorganic material (particularly glass).

[0049] In an embodiment, the stack sidewall includes at least two tapered portions, wherein the tapered portions are arranged along the thickness direction Z of the stack, and in particular, the tapered portions are arranged adjacent to each other along the thickness direction Z of the stack. The stack sidewall may include multiple tapered portions, which can be arranged so that a non-tapered layer structure can be placed between two tapered portions. Preferably, the tapered portions are arranged adjacent to each other. This can bring the advantage of customizing the stress distribution using changes in two-dimensional (2D) stress distribution customization, which can include advanced crack mitigation measures for high-precision manufacturing.

[0050] In an embodiment, the tapered portion is continuously or discontinuously arranged along the thickness direction Z of the stack. In other words, in the discontinuous stack variation, the stack may include a tapered portion, followed by a straight portion or a non-tapered portion, and then another tapered portion is formed at the junction of the straight portion. In a continuous stack formation, the tapered portion can taper in the same or different directions. This can bring the advantage of being able to realize multiple profile changes along the thickness direction of the stack. This can also realize the profile changes of the two-dimensional (2D) or three-dimensional (3D) of the stack sidewall. Such high flexibility can save a lot of additional investment costs for inorganic component manufacturing. This can be achieved through ordinary component manufacturing processes.

[0051] In an embodiment, at least two tapered portions are separated from each other by at least one layer structure in the laminate. In other words, the at least two tapered portions are arranged non-adjacently, and a different layer structure, such as an electrically insulating layer structure or an inorganic layer structure, may be arranged between the two tapered portions. This can result in the laminate exhibiting improved mechanical properties or performance, and can enable more specific customization to meet specific manufacturing requirements.

[0052] In an embodiment, at least two of the tapered portions taper in the same direction or in opposite directions. In other words, when the at least two tapered portions taper in opposite directions, the two tapered portions may form an arrowhead-like shape when viewed in a lateral direction, or may form an inverted arrowhead-like shape when viewed in a lateral direction. This may provide the advantage of reducing stress at the joint, or even increasing stress in the vertical direction, if desired.

[0053] In an embodiment, a first portion of the stack (first layer stacking portion) is arranged on a first major surface of the inorganic layer structure; a second portion of the stack (second layer stacking portion) is arranged on a second major surface of the inorganic layer structure opposite to the first major surface. In other words, the stack may include more than one major surface opposite to each other. In particular, the two opposite major surfaces may be formed as part of a singulation process step, which may also be a unified manufacturing process. This may bring the advantage of a more efficient quality control process when both major surfaces can be inspected after the singulation process step. On the other hand, the first major surface and the second major surface may also be opposite to each other with respect to the stacking direction, which means that the first major surface and the second major surface may also be arranged adjacent to each other on the same side of the stack. Preferably, the first major surface and the second major surface are arranged opposite to each other with respect to the stacking direction, which may also mean that the first major surface and the second major surface form corresponding joints with the layer structure, for example an electrically insulating layer structure and / or an electrically conductive layer structure.

[0054] In an embodiment, the first and second portions of the stack each include a tapered sidewall, particularly wherein each portion of the tapered sidewall of the stack tapers in opposite directions. In other words, the stack can be formed from two distinct portions, each of which can include a tapered sidewall. For example, when viewed in a lateral direction, the tapered sidewall of the stack can be arrow-shaped when both portions include tapered sidewalls that taper in opposite directions and the junction of the two portions defines the maximum lateral extent of the sidewall. This can have the advantage of reducing stress in two opposing directions when reference is made to the point of the maximum lateral extent of the stack.

[0055] In an embodiment, the inorganic layer structure includes at least a lateral extension that is different from the lateral extension of the first portion of the stack and the lateral extension of the second portion, wherein the lateral extension of the first portion of the stack and the lateral extension of the second portion are each formed with an edge that is spaced apart from each other by a portion of the stack side wall. Specifically, the edge of the first portion of the stack formed by a portion of the stack side wall - which edge is a different lateral extension - can be different from the edge of the second portion of the stack formed by a portion of the stack side wall. However, the two edges of the first portion and the second portion of the stack can also have the same lateral extension. This can bring the advantages of all-glass processing, where the edge of the corresponding portion is formed by a portion of the stack side wall. This can reduce the need to embed additional material to form the edge.

[0056] In an embodiment, the distance between the first portion of the stack and the adjacent edge of the stack sidewall is different from the distance between the second portion of the stack and the adjacent edge of the stack sidewall. This can have the advantage of having different distances between the two portions of the stack and the adjacent edge of the stack sidewall, thereby achieving more differentiated stress characteristics in each respective portion.

[0057] In an embodiment, the inorganic layer structure is configured as a core layer in a stack. In other words, the electrically insulating layer structure and / or the electrically conductive layer structure can be arranged at the periphery with reference to the inorganic layer structure. In particular, the inorganic layer structure can be arranged to be positioned between at least a portion of the electrically insulating layer structure and / or at least a portion of the electrically conductive layer structure. This can provide the advantage of structurally shielding the inorganic layer structure in the stacking direction.

[0058] The inorganic layer structure as the core provides good mechanical stability for the entire component carrier, which means that the inorganic layer structure can compensate for the warping caused by heat treatment of organic materials. In addition, the flat surface of the inorganic layer structure can facilitate the formation of fine-line structures and high density for high-performance computing.

[0059] In an embodiment, the inorganic layer structure includes at least one of glass, ceramic, semiconductor material, and quartz.

[0060] In an embodiment, the inorganic layer structure formed by cutting the stack is formed to be laterally exposed and at least partially form the sidewalls of the stack. In particular, cutting the stack can be performed by dicing the material portion and / or performing laser separation. This can bring advantages such as reduced dicing block distance and / or reduced combined dimensional tolerance.

[0061] In exemplary embodiments, the present invention can mitigate the effects of glass damage on dielectric materials, such as delamination and glass cracking. This can be caused by shifting the maximum stress point from the glass wall to the Ajinomoto buildup film (ABF) or glass joint. The present invention can provide additional advantages, such as reducing and improving the risk of glass crack propagation caused by solidification / residual expansion stresses in the front and back ABFs.

[0062] In an embodiment, the segmentation of the component carrier and the tapered portion with exposed inorganic side edges is achieved by three-step cutting, particularly by laser ablation. By this method and structure, the stress point is changed, and the stress around the entire inorganic layer structure (the interior and surface of the inorganic layer structure) can be reduced, thereby avoiding cracks. The CTE mismatch of different materials in the component carrier can be compensated, and even the stress caused by cutting strength can be significantly reduced. Product quality and manufacturing efficiency are improved. In addition, this method and structure contribute to the mass production of inorganic components on the market.

[0063] In some embodiments, the separation / singulation (of the component carrier preform or panel) includes a first laser drilling step, followed by a second mechanical drilling step. For example, laser ablation can be used to laser cut a portion of the inorganic layer structure (glass), and then mechanical cutting / drilling can be used to finally separate the inorganic material (glass). From a manufacturing perspective, this can reduce the time required for laser ablation and improve efficiency.

[0064] In an embodiment, the separation / splitting (of a component carrier preform, panel) includes a first step of laser drilling or another material removal process (e.g., wet etching or plasma etching) to modify the properties / characteristics (physical / chemical properties) of the inorganic material. This can modify the brittleness of the inorganic material, thereby avoiding cracks, and the modification can make drilling / cutting more efficient.

[0065] In an embodiment, the separation / splitting comprises at least two drilling steps, in particular when forming an hourglass shape (see Figure 1 For example, compared to forming a straight or tapered shape (see Figures 3 and Figure 4), forming the hourglass shape may include one or more steps. Another step (e.g., drilling holes from above and below the inorganic layer structure) can reduce stress during cutting.

[0066] In one embodiment, the component carrier is formed as a plate. This facilitates a compact design, wherein the component carrier still provides a large base for the components mounted thereon. Furthermore, bare chips, in particular, as an example of embedded electronic components, can be easily embedded in thin boards such as printed circuit boards due to their low thickness.

[0067] In an embodiment, the component carrier is configured as one of a printed circuit board, a substrate (particularly an IC substrate) and an interposer.

[0068] In the context of the present application, the term "printed circuit board" (PCB) may particularly denote a plate-like component carrier formed by laminating a plurality of electrically conductive layer structures with a plurality of electrically insulating layer structures, the lamination being performed, for example, by applying pressure and / or by supplying heat. As a preferred material for PCB technology, the electrically conductive layer structures are made of copper, while the electrically insulating layer structures may comprise resin and / or fiberglass, so-called prepregs or FR4 materials. The individual electrically conductive layer structures may be connected to one another in the desired manner by forming holes through the laminate, for example by laser drilling or mechanical drilling, and by partially or completely filling the holes with an electrically conductive material, in particular copper, thereby forming vias or any other through-hole connections. A filled hole connecting the entire stack (a through-hole connection extending through multiple layers or the entire stack) or connecting at least two electrically conductive layers is referred to as a via. Similarly, optical interconnects may be formed through the various layers of the stack to receive an electro-optical circuit board (EOCB). In addition to one or more components that can be embedded in a printed circuit board, a printed circuit board is typically configured to accommodate one or more components on one or both opposing surfaces of the plate-shaped printed circuit board. The one or more components can be connected to the corresponding major surfaces by soldering. The dielectric portion of the PCB may include a resin with reinforcing fibers (such as glass fibers).

[0069] In the context of the present application, the term "substrate" can particularly refer to a small component carrier. Relative to a PCB, a substrate can be a relatively small component carrier on which one or more components can be mounted, and can be used as a connection medium between one or more chips and another PCB. For example, a substrate can have approximately the same size as the components (particularly electronic components) to be mounted on the substrate (for example, in the case of a chip scale package (CSP)). More specifically, a substrate can be understood as a component carrier for electrical connectors or electrical networks and for connectors that are comparable to a printed circuit board (PCB) but have a relatively high density of lateral and / or vertical arrangements. Lateral connectors are, for example, conductive paths, while vertical connectors can be, for example, drill holes. These lateral connectors and / or vertical connectors are arranged in the substrate and can be used to provide electrical, thermal, and / or mechanical connections between accommodated components or unaccommodated components (such as bare wafers), particularly IC chips and printed circuit boards or intermediate printed circuit boards. Therefore, the term "substrate" also includes "IC substrates." The dielectric portion of the substrate may comprise a resin with reinforcing particles such as reinforcing spheres, particularly glass spheres.

[0070] In the context of this application, the term "inorganic layer structure" may particularly refer to a layer structure comprising an inorganic material, such as an inorganic compound. In particular, the dielectric material of the inorganic layer structure, or even the entire inorganic layer structure, may be made solely of an inorganic material, or at least substantially exclusively of an inorganic material. In another embodiment, the inorganic layer structure may include an inorganic dielectric material and another additional dielectric material. The inorganic compound may be a compound lacking carbon-hydrogen bonds or a compound that is not an organic compound. In an example, the inorganic layer structure may include glass, such as silicon-based glass, particularly soda-lime glass, and / or borosilicate glass and / or aluminosilicate glass and / or lithium silicate glass and / or alkali-free glass. In another example, the inorganic layer structure may include a ceramic material, such as aluminum nitride and / or aluminum oxide and / or silicon nitride and / or boron nitride and / or tungsten including a ceramic material. However, in another example, the inorganic layer structure may include a semiconductor material, such as silicon and / or germanium and / or silicon oxide and / or germanium oxide and / or silicon carbide and / or gallium nitride. In another embodiment, the inorganic layer structure may include (elemental) metals and / or metal alloys, such as copper and / or tin and / or bronze. In yet another embodiment, the inorganic layer structure may include inorganic materials not listed in the above examples, such as: MoS2, CuGaO2, AgAlO2, LiGaTe2, AgInSe2, CuFeS2, BeO.

[0071] The substrate or interposer may include or be composed of at least a glass layer, silicon (Si), and / or a photoimageable or dry-etchable organic material such as an epoxy-based build-up material (e.g., an epoxy-based build-up film), or a polymer composite such as polyimide or polybenzoxazole (the polymer composite may or may not include photosensitive and / or heat-sensitive molecules).

[0072] In an embodiment, at least one electrically insulating layer structure (and / or a curable dielectric element) comprises at least one of the following: a resin or polymer, such as an epoxy resin, a cyanate resin, a benzocyclobutene resin, a bismaleimide triazine resin, a polyphenylene derivative (e.g., based on polyphenylene ether, PPE), a polyimide (PI), a polyamide (PA), a liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), and / or a combination thereof. Reinforcement structures such as meshes, fibers, spheres, or other types of filler particles, made of, for example, glass (multilayer glass) to form a composite material, may also be used. Semi-cured resins combined with reinforcing agents, such as fibers impregnated with the above resins, are referred to as prepregs. These prepregs are typically named after their properties, such as FR4 or FR5, to describe their flame retardant properties. While prepregs, particularly FR4, are generally preferred for rigid PCBs, other materials, particularly epoxy-based buildup materials (e.g., buildup films) or photoimageable dielectric materials, may also be used. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymers, and / or cyanate ester resins may be preferred. In addition to these polymers, low-temperature co-fired ceramics (LTCC) or other low-DK materials, relatively low-DK materials, or ultra-low-DK materials can be used as the electrical insulation layer structure in the component carrier.

[0073] In an embodiment, at least one electrically conductive layer structure comprises at least one of copper, aluminum, nickel, silver, gold, palladium, tungsten, carbon, platinum, (doped) silicon, and magnesium. Although copper is generally preferred, other materials or other types of coatings thereof are also possible, in particular coated with a superconducting material or an electrically conductive polymer, such as graphene or poly (3,4-ethylenedioxythiophene) (PEDOT), respectively.

[0074] At least one component can be embedded in the component carrier and / or surface-mounted on the component carrier. Such a component can be selected from: a non-electrically conductive inlay, an electrically conductive inlay (such as a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (such as a heat pipe), an optical element (such as an optical waveguide or optical conductor connector), an electronic component, or a combination thereof. The inlay can be, for example, a metal block with or without a coating of insulating material (IMS-inlay), which can be embedded or surface-mounted to promote heat dissipation. Suitable materials are defined according to their thermal conductivity, which should be at least 2 W / mK. Such materials are typically based on, but not limited to, metals, metal oxides, and / or ceramics, such as copper, aluminum oxide (Al2O3), or aluminum nitride (AlN). Other geometric structures with increased surface area are also often used to increase the heat exchange capacity. Furthermore, the component may be an active electronic component (implementing at least one pn junction), a passive electronic component such as a resistor, an inductor or a capacitor, an electronic chip, a memory device (e.g., a DRAM or other data memory), a filter, an integrated circuit (e.g., a field programmable gate array (FPGA), a programmable array logic (PAL), a general array logic (GAL) and a complex programmable logic device (CPLD)), a signal processing component, a power management component (e.g., a field effect transistor (FET), a metal oxide semiconductor field effect transistor (MOSFET), a complementary metal oxide semiconductor (CMOS), a junction field effect transistor (JFET), or an insulated-gate transistor (IGFET)). Field effect transistors (IGFETs), all of the above power management components are based on semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (Ga2O3), indium gallium arsenide (InGaAs), and / or any other suitable inorganic compound), optoelectronic interface elements, light-emitting diodes, optocouplers, voltage converters (e.g., DC / DC converters or AC / DC converters), cryptographic components, transmitters and / or receivers, electromechanical transducers, sensors, actuators, microelectromechanical systems (MEMS), microprocessors, capacitors, resistors, inductors, batteries, switches, cameras, antennas, logic chips, and energy harvesting units. However, other components can be embedded in the component carrier. For example, a magnetic element can be used as a component. Such a magnetic element can be a permanent magnetic element (e.g., a ferromagnetic element, an antiferromagnetic element, a multiferroic element, or a ferrimagnetic element, such as a ferrite core), or such a magnetic element can be a paramagnetic element. However, the component can also be an IC substrate, an interposer, or another component carrier, for example in a board-in-board configuration. The components can be surface mounted on the component carrier and / or can be embedded in the interior of the component carrier. In addition, other components can also be used as components, in particular those that generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagated from the environment.

[0075] In an embodiment, the component carrier is a laminated component carrier. In this embodiment, the component carrier is a composite of multiple layers that are stacked and connected together by applying pressure and / or heat.

[0076] After processing the internal layer structure of the component carrier, one or both main surfaces of the processed layer structure can be covered symmetrically or asymmetrically with one or more further electrically insulating and / or electrically conductive layer structures (in particular by lamination). In other words, the stacking can be continued until the desired number of layers is obtained.

[0077] After the formation of the stack of electrically insulating and electrically conductive layer structures has been completed, the resulting layer structure or component carrier can be subjected to a surface treatment.

[0078] In particular, with regard to surface treatment, an electrically insulating solder resist can be applied to one or both opposing main surfaces of a laminate or component carrier. For example, such a solder resist can be formed over the entire main surface and then patterned to expose one or more electrically conductive surface portions used to electrically connect the component carrier to an electronic peripheral. Surface portions of the component carrier that remain covered with the solder resist, particularly those containing copper, can be effectively protected from oxidation or corrosion.

[0079] In terms of surface treatment, a surface treatment can also be selectively applied to exposed electrically conductive surface portions of the component carrier. This surface treatment can be an electrically conductive covering material on exposed electrically conductive layer structures (such as pads, conductive traces, etc., particularly comprising or consisting of copper) on the surface of the component carrier. If such exposed electrically conductive layer structures are not protected, the exposed electrically conductive component carrier material (particularly copper) can oxidize, making the component carrier less reliable.

[0080] The surface treatment can be formed, for example, as a joint between a surface-mounted component and a component carrier. The surface treatment has the function of protecting the exposed electrically conductive layer structure (particularly copper circuits) and enabling a joining process with one or more components, for example, by soldering. Examples of suitable materials for the surface treatment are organic solderability preservative (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium immersion gold (ENIPIG), gold (particularly hard gold), chemical tin (chemical and electroplated), nickel-gold, nickel-palladium, and the like. BRIEF DESCRIPTION OF THE DRAWINGS

[0081] The aspects defined above and further aspects of the invention are apparent from the examples of embodiment described hereinafter and are explained with reference to these examples of embodiment.

[0082] Figure 1 Shown is a cross section through two component carriers according to an exemplary embodiment of the present invention after penetration.

[0083] Figure 2 A cross section through two component carriers according to the prior art is shown.

[0084] Figures 3a to 3d The production process of separating a component carrier preform into component carriers according to an exemplary embodiment of the present invention is shown.

[0085] Figure 4 A cross section through a component carrier according to an exemplary embodiment of the invention is shown. DETAILED DESCRIPTION

[0086] Figure 1 A schematic cross-section of two component carriers 100 (after separation) after being penetrated according to an exemplary embodiment of the present invention is shown. Each component carrier 100 includes a stack 102 having an electrically insulating layer structure 106 and an electrically conductive layer structure 104 disposed between the electrically insulating layer structures 106 (layer stack). The stacked electrically conductive layer structures 104 are patterned so that the electrically conductive layer structures 104 are arranged spaced apart in the stacking direction by the electrically insulating layer structures 106. An inorganic layer structure 108, exemplarily made of glass, forms the core layer of the stack 102 and is disposed between the layer stack of the electrically insulating layer structures 106 and the electrically conductive layer structures 104.

[0087] The glass core layer constituting the inorganic layer structure 108 is laterally exposed at the distal end of the arrangement of the electrically conductive layer structure 104 within the stack 102. The laterally exposed surface (here, at the distal end of the electrically conductive layer structure 104) can be seen from the stack sidewall 107 of the stack 102. The stack sidewall 107 can be seen as tapering in the lateral direction with an arrow-like shape, wherein the lateral extension is greatest in the middle of the stack 102.

[0088] As can be seen, the inorganic layer structure 108 is exposed in the lateral direction as described above, and is also exposed on two sides perpendicular to the lateral direction in the stacking direction. The tapered portion 110 of the stack sidewall includes two portions 107a and 107b arranged adjacent to each other. When the two portions 107a and 107b are formed in opposite directions parallel to the stacking direction, the location where the two portions 107a and 107b form the maximum point of the lateral extension is reduced by the tapering of the stack sidewall. In other words, the surfaces of the sub-portions 107a and 107b are tapered in a manner that deviates from each other (in opposite directions).

[0089] A tapered portion 110 for the inorganic layer structure 108 is formed on the inorganic layer structure 108 and also on the electrically insulating layer structure 106 of the stack 102 .

[0090] The tapered portion 110 is Figure 1 The structure 104 can be considered to be defined by one inorganic layer structure 108 and two layer stacking portions (electrically insulating layer structures 106 ), both of which are arranged adjacent to the inorganic layer structure 108 in the stacking direction.

[0091] like Figure 1 In this example, both electrically insulating layer structures 106 of the stack are made of Ajinomoto built-up film (ABF). In contrast, the glass inorganic layer structure 108 also serves as a stabilizing core structure. Consequently, the junction between the electrically insulating layer structure 106 and the inorganic layer structure 108 causes a high stress point shift during cutting. Consequently, the cutting process tapers the electrically insulating layer structure 106 and the glass inorganic layer structure 108, mitigating horizontal cracking in the glass substrate caused by the shift in high stress points and the reduced stress within and on the surface of the inorganic structure.

[0092] The inorganic layer structure 108 has a different lateral extension than the electrically insulating layer structure 106. Figure 1 In the exemplary embodiment of the present invention, the inorganic layer structure 108 has a larger lateral extension than the two adjacently arranged electrically insulating layer structures 106 of the stack. The larger lateral extension of the inorganic layer structure 108 constitutes Figure 1 The protrusion formed in the example.

[0093] The formed protrusion forms two steps at the stack sidewall 107 , one step on each side of the protrusion in the stacking direction. The steps are formed at the edge 112 of the inorganic layer structure 108 .

[0094] The stack sidewall 107 has two tapered portions 107a and 107b. As can be seen, the two tapered portions 107a and 107b are arranged adjacent to each other, thereby forming an arrow-like shape when viewed in a lateral direction. It can be seen that the two tapered portions 107a and 107b are arranged continuously with each other along the thickness direction of the stack and are not interrupted by non-tapered portions. The arrow-like shape of the tapered portions can be attributed to the fact that the tapered portions 107a and 107b taper in opposite directions.

[0095] In an exemplary embodiment, the stack 102 includes a first portion 102a and a second portion 102b, which are respectively disposed on a first major surface and a second major surface (in other words, a top stacking portion and a bottom stacking portion). These major surfaces are formed to be opposite to each other in the stacking direction. It can be seen that the two major surfaces form the junctions between the inorganic layer structure 108, the electrically insulating layer structure 106, and the electrically conductive layer structure 104, wherein the junction between the inorganic layer structure 108 and the electrically insulating layer structure 106 is arranged close to the stack sidewall 107, and the junction between the inorganic layer structure 108 and the electrically conductive layer structure 104 is arranged away from the stack sidewall 107.

[0096] The first portion 102a and the second portion 102b of the stack 102 each include Figure 1 The tapered sidewalls 107a and 107b shown are tapered in opposite directions as described above, thereby forming an arrow-like shape when viewed in a lateral direction. The tapering can also be seen as being in an hourglass shape when viewed in a lateral direction.

[0097] The lateral extensions of the first and second portions 102a, 102b of the stack are each formed with an edge 112, 113 that are spaced apart from one another by a portion of the stack sidewall 107.

[0098] The distance between the first portion 102a of the stack 102 and the adjacent edge 114 of the stack sidewall 107 is also different than the distance between the second portion 102b of the stack 102 and the adjacent edge 115 of the stack sidewall 107. Figure 1 In particular, the distance between the first portion 102a of the stack 102 and the adjacent edge 114 of the stack sidewall 107 is greater than the distance between the second portion 102b of the stack 102 and the adjacent edge 115 of the stack sidewall 107 .

[0099] In other words, first portion 102a of stack 102 extends a first distance along the upper major surface of inorganic layer structure 108 and second portion 102b of stack extends a second distance along the lower major surface of inorganic layer structure 108, wherein the first distance is greater than the second distance.

[0100] Figures 3a to 3d A cross-sectional view showing a component carrier manufacturing process using a laser according to an exemplary embodiment of the present invention.

[0101] Figure 3a A component carrier preform (panel) is illustrated having a top buildup and a bottom buildup with a glass core in the middle of the stack.

[0102] Figure 3bA laser process is illustrated for forming a top dielectric material opening with tapered sidewalls at the top electrical insulating layer structure 106. The top dielectric opening has a width of, for example, about 5 μm to 300 μm. In subsequent steps, Figure 3c The step of forming a bottom dielectric material opening by the manufacturing laser is also illustrated. This step forms a tapered sidewall at the bottom dielectric material. The bottom dielectric opening has a width of, for example, about 10 μm to 500 μm. At this time, in the case of forming the top dielectric material and the bottom dielectric material with the tapered sidewall, Figure 3d The subsequent steps in FIG. 1 illustrate laser cutting the glass core to form a glass cutting width of, for example, approximately 1 μm to 250 μm.

[0103] The width of this structure provides greater tolerance and precision for different cutting methods, so different cutting methods can be selected to achieve different precisions. As exemplified in the present invention, by Figure 3b and Figure 3c The first two laser manufacturing process steps shown in the figure reduce stress on the glass core, significantly reducing lateral or horizontal cracks in the glass substrate. It can also be seen that during laser cutting, due to the transparency of the inorganic layer structure, the heat and energy of the laser damage the bottom side, resulting in more material being removed there than from the top side, while laser ablation treats the opposite side. This can offer specific advantages depending on the desired application. Finally, two component carriers 100 are obtained by separating the component carrier preform.

[0104] Figure 4 1 shows a cross section through two component carriers 100 according to an exemplary embodiment of the invention. Figure 1 compared to, Figure 4 Only one tapered portion 107a is shown, which tapers in only one direction. Figure 4 The lateral extension of the inorganic layer structure 108 in φ is now at its greatest at the lower edge 112 , which joins the lower electrically insulating layer structure 106 of the bottom build-up part.

[0105] Reference Signs List

[0106] 100-component carrier

[0107] 102 stacked pieces

[0108] 102a, 102b first and second parts of the stack

[0109] 104 electrical conductive layer structure

[0110] 106 Electrical insulation layer structure

[0111] 107 side wall

[0112] 107a, 107b Sub-portions of the side walls

[0113] 108 Inorganic layer structure

[0114] 110 tapered portion of the side wall

[0115] 111 protrusion of inorganic layer structure

[0116] 112, 113 Inorganic layer structure sidewall edge

[0117] 114 , 114 , 115 are adjacent edges of the sidewalls of the inorganic layer structure.

Claims

1. A component carrier (100) having a stack of components (102), wherein: The stack (102) includes: at least one electrically insulating layer structure (106); at least one electrically conductive layer structure (104); a stack sidewall (107), wherein at least a portion of the stack sidewall (107) tapers relative to a stacking direction; and At least one inorganic layer structure (108) is laterally exposed and at least partially forms the stack sidewall (107).

2. The component carrier (100) according to claim 1, in, The tapered portion (110) of the stack sidewall (107) includes an exposed portion of the inorganic layer structure (108), or the tapered portion of the stack sidewall (107) is composed of an exposed portion of the inorganic layer structure (108).

3. The component carrier (100) according to claim 1 or 2, in, The tapered portion (110) of the stack side wall (107) comprises two sub-portions arranged adjacent to each other, wherein the surface of each sub-portion is tapered, In particular, wherein the surfaces taper away from each other.

4. The component carrier (100) according to one of the preceding claims, wherein The lateral extension profile of the inorganic layer structure (108) follows the thickness direction of the stack.

5. The component carrier (100) according to one of the preceding claims, wherein The tapered portion (110) of the stack sidewall (107) is at least partially formed on at least one of the electrically insulating layer structure (106) and the inorganic layer structure (108) of the stack (102).

6. Component carrier (100) according to one of the preceding claims, in, The tapered portion (110) of the stack sidewall (107) is defined by a multi-layer structure formed by the electrically insulating layer structure (106) and the inorganic layer structure (108) of the stack (102).

7. Component carrier (100) according to one of the preceding claims, in, at least one of the electrically insulating layer structures (106) defining the tapered portion (110) of the stack sidewall (107) is different from at least one of the inorganic layer structures (108), In particular, At least one of the electrically insulating layer structures (106) comprises an organic material.

8. Component carrier (100) according to one of the preceding claims, in, The tapered portion (110) of the stack sidewall (107) is defined solely by the electrically insulating layer structure (106).

9. Component carrier (100) according to one of the preceding claims, in, The inorganic layer structure (108) comprises a lateral extension different from the electrically insulating layer structure (106) and the electrically conductive layer structure (104) of the stack (102), wherein the lateral extension forms at least one protrusion (111) at the stack sidewall (107).

10. The component carrier (100) according to claim 9, in, The protrusion (111) forms at least one step portion at an edge (112) of the inorganic layer structure (108).

11. Component carrier (100) according to one of the preceding claims, in, The stacking side wall (107) includes at least two tapered portions (107a, 107b), wherein the at least two tapered portions (107a, 107b) are arranged along the thickness direction of the stacking, and in particular, the at least two tapered portions (107a, 107b) are arranged adjacent to each other along the thickness direction of the stacking.

12. The component carrier (100) according to claim 11, in, The at least two tapered portions (107a, 107b) are disposed continuously with each other along the thickness direction of the stacked piece, or the at least two tapered portions (107a, 107b) are disposed discontinuously with each other along the thickness direction of the stacked piece.

13. Component carrier (100) according to claim 11 or 12, in, The at least two tapered portions (107a, 107b) are spaced apart from each other by at least one layer structure of the electrically insulating layer structure (106) and the inorganic layer structure (108) of the stack (102).

14. Component carrier (100) according to one of claims 11 to 13, in, The at least two tapered portions (107a, 107b) taper in the same direction or in opposite directions.

15. The component carrier (100) according to one of the preceding claims, wherein The first portion (102a) of the stack (102) is disposed on a first major surface of the inorganic layer structure (108); and The second portion (102b) of the stack (102) is disposed on a second major surface of the inorganic layer structure (108) opposite to the first major surface.

16. Component carrier (100) according to claim 15, in, The first portion (102a) and the second portion (102b) of the stack (102) both include tapered sidewalls, In particular, Each portion of the tapered ply stack sidewall (107) tapers in opposite directions.

17. Component carrier (100) according to claim 15 or 16, in, The inorganic layer structure (108) includes at least one lateral extension that is different from the lateral extension of the first portion (102a) and the lateral extension of the second portion (102b) of the stack (102), wherein the lateral extensions of the first portion (102a) and the second portion (102b) of the stack (102) are each formed with edges (112, 113) spaced apart from each other by a portion of the stack sidewall (107).

18. Component carrier (100) according to claim 17, in, The distance (112a) between the first portion (102a) of the stack (102) and the adjacent edge (114) of the stack sidewall (107) is different from the distance between the second portion (102b) of the stack (102) and the adjacent edge (115) of the stack sidewall (107).

19. Component carrier (100) according to one of the preceding claims, in, The inorganic layer structure (108) is configured as a core layer in the stack (102).

20. Component carrier (100) according to one of the preceding claims, in, The inorganic layer structure (108) includes at least one of glass, ceramic, semiconductor material, and quartz material.

21. A method for manufacturing a component carrier (100), wherein: The method comprises: Providing a stack (102) having at least one electrically insulating layer structure (106) and at least one electrically conductive layer structure (104); Providing the stack (102) with a stack sidewall (107), wherein at least a portion (107a, 107b) of the stack sidewall (107) tapers relative to a stacking direction; and At least one inorganic layer structure (108) is provided for the stack (102), wherein the inorganic layer structure is formed to be exposed in a laterally direction and at least partially forms the stack sidewall (107).

22. Method for producing a component carrier (100) according to claim 21, in, The inorganic layer structure (108) is formed by cutting the stack so as to be exposed in a lateral direction and at least partially form the stack sidewall (107).

23. A method of manufacturing a component carrier (100), the method comprising: Providing component carrier prefabrication; dividing the component carrier preform into a plurality of component carriers (100), wherein at least one component carrier according to one of claims 1 to 20 is provided; and / or Wherein, the method according to claim 21 or 22 is performed.

24. The method according to claim 23, wherein Dividing the component carrier preform into a plurality of component carriers (100) comprises laser drilling and / or another material removal process, in particular, the other material removal process is at least one of mechanical drilling, wet etching, plasma etching.

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