LED full-color device and manufacturing method of LED full-color device

Abstract

The invention discloses an LED full-color device and a manufacturing method of the LED full-color device. The LED full-color device comprises a color conversion layer, a bonding layer and a chip array which are stacked in sequence. The color conversion layer comprises a plurality of quantum dot color conversion structures, and any quantum dot color conversion structure comprises a light conversion layer; the chip array comprises a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer and an ITO (Indium Tin Oxide) conductive layer which are stacked in sequence to form a plurality of chip units; and the chip units and the quantum dot color conversion structures are correspondingly arranged in the vertical direction. The color conversion layer composed of a plurality of quantum dot color conversion structures and the chip array composed of a plurality of P electrodes and N electrodes are arranged, the color conversion layer and the chip array are bonded through the bonding layer, the formed LED full-color device is more simplified in structure, more concise in preparation process and lower in manufacturing cost, and the light-emitting efficiency and the light-emitting precision of the device are effectively optimized.

Description

Technical Field

[0001] The present invention relates to the technical field of display devices, and in particular to an LED full-color device and a method for manufacturing the LED full-color device. Background Art

[0002] With the continuous development of digitalization and intelligence, the display functions of display devices are gradually shifting from traditional displays to digital and personalized displays. Correspondingly, the performance requirements for display devices are also gradually increasing. Existing MIP (Mini / Micro LED in Package) full-color devices use a mass transfer process to selectively arrange the red, green, and blue chips on a carrier board. The chip electrodes are then amplified and connected through fan-out packaging technology, making them compatible with the subsequent PCB board die bonding process. These devices are manufactured using a mass transfer process to selectively arrange the light-emitting chips on the carrier board. Wire bonding is performed through a rewiring process, and the chip electrodes are then amplified and connected through fan-out packaging technology, making them compatible with the subsequent PCB board die bonding process. However, the existing device structure and manufacturing process have significant shortcomings. After the light-emitting chips are arranged on the carrier board through the mass transfer process, the rewiring process is cumbersome and complex, resulting in a complex device structure, a tedious manufacturing process, and increased manufacturing costs. Furthermore, it is difficult to ensure the device's luminous efficiency and luminous accuracy. Summary of the Invention

[0003] The purpose of the present invention is to overcome the shortcomings of the existing technology. The present invention provides an LED full-color device and a method for manufacturing an LED full-color device. A color conversion layer composed of a plurality of quantum dot color conversion structures and a chip array composed of a plurality of P electrodes and N electrodes are provided. The two are bonded through a bonding layer. The formed LED full-color device has a simpler structure, a simpler preparation process, and a lower production cost, and effectively optimizes the luminous efficiency and luminous accuracy of the device.

[0004] The present invention provides an LED full-color device, comprising a color conversion layer, a bonding layer, and a chip array stacked in sequence, wherein the color conversion layer and the chip array are bonded together based on the bonding layer;

[0005] The color conversion layer includes a plurality of quantum dot color conversion structures, and any one of the quantum dot color conversion structures includes a light conversion layer;

[0006] The chip array includes a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer and an ITO conductive layer stacked in sequence, and a plurality of chip units are formed on the buffer layer, the N-type semiconductor layer, the multi-quantum well layer, the P-type semiconductor layer and the ITO conductive layer;

[0007] The positions of the plurality of chip units and the plurality of quantum dot color conversion structures are arranged correspondingly in the vertical direction.

[0008] Furthermore, the quantum dot color conversion structure further includes a light filtering layer and a protective layer, and the light filtering layer, the light conversion layer and the protective layer are stacked in sequence.

[0009] Furthermore, the plurality of quantum dot color conversion structures include a red light quantum dot color conversion structure and a green light quantum dot color conversion structure;

[0010] The color conversion layer also includes a blue light filtering structure, which includes a blue light filtering layer, a transparent light blocking layer and a blue light protection layer stacked in sequence.

[0011] Furthermore, the area of ​​the light conversion layer of the green light quantum dot color conversion structure is larger than the area of ​​the light conversion layer of the red light quantum dot color conversion structure.

[0012] Furthermore, the color conversion layer also includes a transparent substrate and a first encapsulation layer. The transparent substrate is pressed onto the surface of the light filtering layer of the quantum dot color conversion structure, and is pressed onto the surface of the blue light filtering layer of the blue light filtering structure. The first encapsulation layer covers the several quantum dot color conversion structures and the blue light filtering structures.

[0013] Furthermore, the plurality of chip units include a plurality of P-pole chip units and a plurality of N-pole chip units, a P-electrode is formed on the P-pole chip unit, and an N-electrode is formed on the N-pole chip unit.

[0014] Furthermore, the chip array further includes a plurality of P-pole pin electrodes and a plurality of N-pole pin electrodes, wherein the P-pole pin electrodes are formed on the P-electrodes, and the N-pole pin electrodes are formed on the N-electrodes.

[0015] Furthermore, a plurality of first wire grooves are opened in the N-type semiconductor layer, and the plurality of first wire grooves are filled with optical waveguide blocking layers.

[0016] Furthermore, a plurality of second wire grooves are opened in the buffer layer, and explosion relief channels are formed in the plurality of second wire grooves.

[0017] Furthermore, the LED full-color device also includes a second packaging layer, and the second packaging layer covers the chip array.

[0018] Furthermore, a metal reinforcement layer is provided on the second packaging layer.

[0019] The present invention also provides a method for manufacturing a full-color LED device, which is used to manufacture the above-mentioned full-color LED device, and the method comprises:

[0020] forming a plurality of quantum dot color conversion structures and a blue light filtering structure on a transparent substrate to form a color conversion layer;

[0021] Perform deep etching on the LED epitaxial wafer to form a chip array consisting of several P-pole chip units and several N-pole chip units;

[0022] A bonding layer is formed on the chip array, and the color conversion layer and the chip array are heat-pressed and bonded to form a finished LED full-color device consisting of the color conversion layer, the bonding layer and the chip array stacked in sequence.

[0023] Furthermore, the step of forming a plurality of quantum dot color conversion structures and a blue light filtering structure on a transparent substrate to form a color conversion layer includes:

[0024] A light filtering layer, a light conversion layer and a protective layer are sequentially prepared on the transparent substrate, and a blue light filtering layer, a transparent light blocking layer and a blue light protective layer are sequentially prepared, and then a first encapsulation layer is formed to form a color conversion layer composed of a plurality of quantum dot color conversion structures and a blue light filtering structure.

[0025] Furthermore, the step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units includes:

[0026] Deep etching is performed on the buffer layer, N-type semiconductor layer, multi-quantum well layer, and P-type semiconductor layer of the LED epitaxial wafer, and an ITO conductive layer is prepared on the surface of the P-type semiconductor layer to form a plurality of chip units;

[0027] Preparing a P-electrode layer on a P-pole chip unit among the plurality of chip units to form a P-electrode;

[0028] An N-electrode layer is prepared on the N-pole chip units among the plurality of chip units to form an N-electrode.

[0029] Furthermore, the step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P electrodes and a plurality of N electrodes further includes:

[0030] A plurality of second wire grooves are formed by etching on the buffer layer of the LED epitaxial wafer, and explosion relief channels are formed in the plurality of second wire grooves.

[0031] Furthermore, the step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes:

[0032] A plurality of first grooves are formed by etching in the N-type semiconductor layer of the LED epitaxial wafer, and optical waveguide blocking layers are formed in the plurality of first grooves.

[0033] Furthermore, the step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes:

[0034] A second packaging layer is formed to cover the chip array and expose the P electrode and the N electrode.

[0035] Furthermore, the step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes:

[0036] A P-pole lead electrode is formed on the P-electrode exposed by the second packaging layer, and an N-pole lead electrode is formed on the N-electrode exposed by the second packaging layer.

[0037] The present invention provides an LED full-color device and a method for manufacturing the same. By providing a color conversion layer composed of a plurality of quantum dot color conversion structures and a chip array composed of a plurality of P electrodes and N electrodes, and bonding the two together through a bonding layer, the LED full-color device formed has a simpler structure, a simpler preparation process, and a lower production cost, effectively optimizing the luminous efficiency and luminous precision of the device. The manufacturing method replaces the mass transfer process and the rewiring process by forming the color conversion layer and the chip array separately and then bonding them. The manufacturing process is simpler. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0039] Figure 1 This is a cross-sectional structural diagram of the LED full-color device in Example 1 of the present invention;

[0040] Figure 2 This is an exploded structural diagram of the LED full-color device in Example 1 of the present invention;

[0041] Figure 3 This is a surface structure diagram of the LED full-color device in Example 1 of the present invention;

[0042] Figure 4 This is a top view of the full-color LED device in Example 1 of the present invention;

[0043] Figure 5 This is a flow chart of a method for manufacturing a full-color LED device in the second embodiment of the present invention;

[0044] Figure 6This is a cross-sectional structural diagram of a semi-finished product after step S501 is completed in the second embodiment of the present invention;

[0045] Figure 7 is a flow chart of forming a chip array in the second embodiment of the present invention;

[0046] Figure 8 This is a cross-sectional structural diagram of a semi-finished product after step S701 is completed in the second embodiment of the present invention;

[0047] Figure 9 This is a cross-sectional structural diagram of a semi-finished product after step S703 is completed in the second embodiment of the present invention;

[0048] Figure 10 This is a cross-sectional structural diagram of a semi-finished product after step S705 is completed in the second embodiment of the present invention;

[0049] Figure 11 It is a cross-sectional structural diagram of the finished product after completing step S503 in the second embodiment of the present invention. DETAILED DESCRIPTION

[0050] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0051] In the present invention, it should be understood that terms such as "include" or "have" are intended to indicate the presence of features, numbers, steps, behaviors, components, parts or their combinations disclosed in this specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, behaviors, components, parts or their combinations exist or are added.

[0052] It should also be noted that, in the absence of conflict, the embodiments and features of the embodiments of the present invention can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0053] Example 1

[0054] Embodiment 1 of the present invention provides an LED full-color device, which includes a color conversion layer, a bonding layer and a chip array stacked in sequence, and the color conversion layer and the chip array are bonded together based on the bonding layer; the color conversion layer includes a plurality of quantum dot color conversion structures, and any one of the quantum dot color conversion structures includes a light conversion layer; the chip array includes a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer and an ITO conductive layer stacked in sequence, and a plurality of chip units are formed on the buffer layer, the N-type semiconductor layer, the multi-quantum well layer, the P-type semiconductor layer and the ITO conductive layer; the positions of the plurality of chip units and the plurality of quantum dot color conversion structures are arranged correspondingly in the vertical direction.

[0055] In an optional implementation of this embodiment, as Figure 1 、 Figure 2 and Figure 3 As shown, Figure 1 The cross-sectional structure diagram of the LED full-color device in the first embodiment of the present invention is shown. Figure 2 The exploded structure diagram of the LED full-color device in the first embodiment of the present invention is shown. Figure 3 The surface structure diagram of the LED full-color device in Example 1 of the present invention is shown. The LED full-color device includes a color conversion layer 1, a bonding layer 2 and a chip array 3 stacked in sequence. The color conversion layer 1 and the chip array 3 are bonded together based on the bonding layer 2.

[0056] In an optional implementation of this embodiment, the color conversion layer 1 includes a plurality of quantum dot color conversion structures, and any one of the quantum dot color conversion structures includes a light conversion layer.

[0057] Specifically, the color conversion layer refers to the technology that uses QDCC (Quantum Dot Color Converter) color film technology to directly form quantum dots into red and green sub-pixels, replacing the color filter film. Blue light OLED or blue light LED is used as the excitation light source to excite the red and green quantum dots, converting the blue light into red and green light. The three primary colors of RGB can be realized without the use of color filter films, thereby realizing full-color display.

[0058] Furthermore, the quantum dot color conversion structure further includes a light filtering layer and a protective layer, and the light filtering layer, the light conversion layer and the protective layer are stacked in sequence.

[0059] In an optional implementation of this embodiment, as Figure 1 and Figure 3 As shown, the color conversion layer 1 includes two quantum dot color conversion structures.

[0060] Furthermore, the plurality of quantum dot color conversion structures include a red light quantum dot color conversion structure 11 and a green light quantum dot color conversion structure 12 .

[0061] Specifically, such as Figure 1 and Figure 3 As shown, the two quantum dot color conversion structures include a red light quantum dot color conversion structure 11 and a green light quantum dot color conversion structure 12;

[0062] The red light quantum dot color conversion structure 11 includes a red light filter layer 111 , a red light conversion layer 112 and a red light protection layer 113 , and the green light quantum dot color conversion structure 12 includes a green light filter layer 121 , a green light conversion layer 122 and a green light protection layer 123 .

[0063] Furthermore, the red light filter layer 111 is a red light filter or a red light filter coating, and the green light filter layer 121 is a green light filter or a green light filter layer;

[0064] The red light conversion layer 112 is a red light quantum dot layer, and the green light conversion layer 122 is a green light quantum dot layer;

[0065] The red light protection layer 113 and the green light protection layer 123 are water- and oxygen-blocking protection layers.

[0066] It should be noted that the area of ​​the light conversion layer of the green quantum dot color conversion structure 13 is larger than the area of ​​the light conversion layer of the red quantum dot color conversion structure 11 .

[0067] Here, since the conversion efficiency of the green light quantum dot layer is relatively low, its area needs to be larger than that of the red light quantum dot layer to ensure balanced light output.

[0068] In an optional implementation of this embodiment, the color conversion layer 1 further includes a blue light filter structure 13 , and the blue light filter structure 13 includes a blue light filter layer 131 , a transparent photoresist layer 132 , and a blue light protection layer 133 stacked in sequence.

[0069] A blue light filtering structure and a transparent photoresist layer are set here because the GaN gallium nitride vertical structure chip used emits blue light. Therefore, only red light conversion layer and green light conversion layer need to be set to convert them into red light and green light. The blue light emitted by the chip only needs to be filtered.

[0070] In an optional implementation of this embodiment, the color conversion layer 1 also includes a transparent substrate 14, which is pressed onto the surface of the light filtering layer of the quantum dot color conversion structure, including the surfaces of the red light filter layer 111 and the green light filter layer 121, and pressed onto the surface of the blue light filter layer 131 of the blue light filter structure 13.

[0071] Specifically, the transparent substrate 14 is used to carry the plurality of quantum dot color conversion structures and the blue light filtering structure.

[0072] In an optional implementation of this embodiment, the color conversion layer 1 further includes a first encapsulation layer 15 , and the first encapsulation layer 15 covers the plurality of quantum dot color conversion structures and the blue light filtering structure.

[0073] Furthermore, the color of the first encapsulation layer 15 is black, which can protect the quantum dot color conversion structure while increasing the device's light output contrast and preventing interference from side light.

[0074] In an optional implementation of this embodiment, the material of the bonding layer 2 is transparent adhesive, the refractive index is less than 2 (GaN refractive index > 2, the bonding layer refractive index must be less than the GaN refractive index), the thickness is 2um-3um, and can be one or more values ​​of 2um, 2.2um, 2.5um, 2.8um, 3um.

[0075] In an optional implementation of this embodiment, the chip array 3 includes a buffer layer 31, an N-type semiconductor layer 32, a multi-quantum well layer 33, a P-type semiconductor layer 34 and an ITO conductive layer 35 stacked in sequence, and a number of chip units are formed on the buffer layer 31, the N-type semiconductor layer 32, the multi-quantum well layer 33, the P-type semiconductor layer 34 and the ITO conductive layer 35. The number of chip units includes a number of P-pole chip units 4 and a number of N-pole chip units 5. A P electrode 41 is formed on the P-pole chip unit 4, and an N electrode 51 is formed on the N-pole chip unit 5.

[0076] Specifically, the buffer layer 31 is a U-type GaN layer, the N-type semiconductor layer 32 is an N-type GaN layer, the multi-quantum well layer 33 is an MQW (Multiple Quantum Well) layer, and the P-type semiconductor layer 34 is a P-type GaN layer.

[0077] Furthermore, the plurality of chip units are arranged in a matrix.

[0078] More, such as Figure 1 As shown, three P-pole chip units 4 and one N-pole chip unit 5 are formed on the chip array 3 .

[0079] Furthermore, the ITO conductive layer is a thin film made of ITO (Indium Tin Oxide), which has transparent and conductive properties.

[0080] In an optional implementation of this embodiment, the P-pole chip unit 4 includes a P-electrode 41 and a first insulating layer 42 , the P-electrode 41 is arranged on the top surface of the P-pole chip unit 4 , and the first insulating layer 42 is covered on the side wall of the P-pole chip unit 4 .

[0081] In an optional implementation of this embodiment, the N-pole chip unit 5 includes an N-electrode 51 and a second insulating layer 52, the N-electrode 51 is arranged on the top surface of the N-pole chip unit 5, the second insulating layer 52 is covered on the side wall of the N-pole chip unit 5, and on one side of the N-pole chip unit 5, the N-electrode 51 is covered on the second insulating layer 52.

[0082] In an optional implementation of this embodiment, the chip array 3 further includes several P-pole pin electrodes 43 and several N-pole pin electrodes 53, the P-pole pin electrodes 43 are formed on the top surface of the P-electrode 41, and the N-pole pin electrodes 53 are arranged on the top surface of the N-electrode 51.

[0083] Specifically, the full-color LED device in the embodiment of the present invention includes three P-pole pin electrodes 43 and one N-pole pin electrode 53 , which are respectively disposed on the top surfaces of three P-electrodes 41 and one N-electrode 51 .

[0084] Furthermore, the P-pole pin electrodes 43 and the N-pole pin electrodes 53 are arranged in a matrix.

[0085] Furthermore, the P-pole pin electrode 43 and the N-pole pin electrode 53 are pin electrodes for communicating with external signals.

[0086] In an optional implementation of this embodiment, a plurality of first grooves are opened in the N-type semiconductor layer 32 , and the plurality of first grooves are filled with an optical waveguide blocking layer 36 .

[0087] Specifically, the optical waveguide blocking layer 36 is a metal grid.

[0088] An optical waveguide blocking layer is provided here, which can serve as an interconnection path between the P electrode 41 of the P-pole chip unit 4 and the N electrode 51 of the N-pole chip unit 5 to achieve the function of current uniformity, and at the same time realize the light blocking function, blocking the lateral propagation of light in the N-type semiconductor layer 32, and reducing the optical crosstalk between chips.

[0089] It should be noted that the N-electrode 51 extends on the sidewall of the second insulating layer 52 and is connected to the optical waveguide blocking layer 36 .

[0090] In an optional implementation of this embodiment, a plurality of second wire grooves are opened in the buffer layer 31 , and explosion relief channels 37 are formed in the plurality of second wire grooves.

[0091] Specifically, the explosion relief channel 37 is filled with bonding glue.

[0092] Here we consider setting up an explosion-proof channel in the buffer layer to dredge and discharge the gas generated when GaN decomposes or changes phase during the laser stripping process, reduce the damage caused by laser stripping to the chip, and improve the laser stripping yield. Subsequently, bonding glue is filled in the explosion-proof channel to avoid the cross-light problem caused by large-angle light emitting to adjacent pixels.

[0093] In an optional implementation of this embodiment, the full-color LED device further includes a second packaging layer 6 , which covers the chip array 3 .

[0094] It should be noted that the P-pole pin electrode 43 and the N-pole pin electrode 53 protrude out of the second packaging layer 6 .

[0095] Specifically, the second packaging layer 6 is provided with a plurality of openings, one end of the P-pole pin electrode 43 is buried in the opening of the second packaging layer 6 and is connected to the P-electrode 41, and the other end extends out of the second packaging layer 6 and is exposed to the outside. Similarly, one end of the N-pole pin electrode 53 is buried in the opening of the second packaging layer 6 and is connected to the N-electrode 51, and the other end extends out of the second packaging layer 6 and is exposed to the outside.

[0096] In an optional implementation of this embodiment, a metal strengthening layer 61 is provided on the second packaging layer 6 .

[0097] Specifically, such as Figure 4 As shown, Figure 4 The top view of the full-color LED device in the first embodiment of the present invention is shown. A metal strengthening layer 61 in one area is provided on the second packaging layer 6 .

[0098] A metal strengthening layer is provided here. When the LED full-color device is subsequently laminated, the ejector pin of the die bonding machine can act on the device through the metal strengthening layer 61 to prevent damage to other parts of the device.

[0099] It should be noted that the metal strengthening layer 61 needs to be provided in the area of ​​the second packaging layer 6 except the P-pole pin electrode 44 and the N-pole pin electrode 54 to prevent damage to the P-pole pin electrode 44 and the N-pole pin electrode 54 .

[0100] Preferably, the metal strengthening layer 61 is arranged at the center of the second packaging layer 6, so that when the film group is subsequently attached, the force exerted by the device on the ejector pins of the die bonder is more uniform.

[0101] In summary, embodiment 1 of the present invention provides an LED full-color device. By setting a color conversion layer composed of several quantum dot color conversion structures and a chip array composed of several P electrodes and N electrodes, and bonding the two together through a bonding layer, the formed LED full-color device has a simpler structure, a simpler preparation process, and a lower production cost, effectively optimizing the luminous efficiency and luminous accuracy of the device.

[0102] Example 2

[0103] Embodiment 2 of the present invention provides a method for manufacturing an LED full-color device, which is used to manufacture the LED full-color device described in Embodiment 1. The method includes: forming a plurality of quantum dot color conversion structures and blue light filtering structures on a transparent substrate to form a color conversion layer; performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units; forming a bonding layer on the chip array, and performing hot-press bonding on the color conversion layer and the chip array to form a finished LED full-color device consisting of a color conversion layer, a bonding layer, and a chip array stacked in sequence.

[0104] In an optional implementation of this embodiment, as Figure 5 As shown, Figure 5 The flowchart of the method for manufacturing a full-color LED device in the second embodiment of the present invention is shown, which includes the following steps:

[0105] S501, forming a plurality of quantum dot color conversion structures and a blue light filtering structure on a transparent substrate to form a color conversion layer;

[0106] In an optional implementation of this embodiment, a light filtering layer, a light conversion layer and a protective layer are sequentially prepared on the transparent substrate to form a plurality of quantum dot color conversion structures.

[0107] In an optional implementation of this embodiment, a blue light filter layer, a transparent photoresist layer and a blue light protection layer are sequentially prepared on the transparent substrate to form a blue light filter structure.

[0108] Specifically, inkjet printing or photolithography is used to sequentially prepare a light filter layer (including a red light filter layer and a green light filter layer), a light conversion layer (including a red light conversion layer and a green light conversion layer), and a protective layer (including a red light protective layer and a green light protective layer) on the transparent substrate to form a red light quantum dot color conversion structure and a green light quantum dot color conversion structure, and a blue light filter layer, a transparent photoresist layer, and a blue light protective layer are sequentially prepared to form a blue light filter structure.

[0109] In an optional implementation of this embodiment, the first encapsulation layer is formed after the red light quantum dot color conversion structure, the green light quantum dot color conversion structure and the blue light filtering structure are formed.

[0110] In an optional implementation of this embodiment, as Figure 6 As shown, Figure 6 The figure shows a cross-sectional structure diagram of a semi-finished product after completing step S501 in the second embodiment of the present invention. The color conversion layer 1 includes a transparent substrate 15, a red quantum dot color conversion structure 11, a green quantum dot color conversion structure 12, and a blue light filtering structure 13 provided on the transparent substrate 15, and a first encapsulation layer 15 covering the red quantum dot color conversion structure 11, the green quantum dot color conversion structure 12, and the blue light filtering structure 13;

[0111] The red light quantum dot color conversion structure 11 includes a red light filter layer 111, a red light conversion layer 112 and a red light protection layer 113; the green light quantum dot color conversion structure 12 includes a green light filter layer 121, a green light conversion layer 122 and a green light protection layer 123; the blue light filter structure 13 includes a blue light filter layer 131, a transparent photoresist layer 132 and a blue light protection layer 133.

[0112] S502, performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units;

[0113] In an optional implementation of this embodiment, as Figure 7 As shown, Figure 7 A flow chart of forming a chip array in a second embodiment of the present invention is shown, including the following steps:

[0114] S701, performing deep etching on the buffer layer, N-type semiconductor layer, multi-quantum well layer, and P-type semiconductor layer of the LED epitaxial wafer, and preparing an ITO conductive layer on the surface of the P-type semiconductor layer to form a plurality of chip units;

[0115] In an optional implementation of this embodiment, after deep etching is performed on the N-type semiconductor layer, multi-quantum well layer, and P-type semiconductor layer of the LED epitaxial wafer, an ITO conductive layer is prepared on the surface of the P-type semiconductor layer to form four chip units, including three P-pole chip units and one N-pole chip unit.

[0116] In an optional implementation of this embodiment, as Figure 8 As shown, Figure 8 The cross-sectional structure diagram of the semi-finished product after completing step S701 in the second embodiment of the present invention is shown. On the LED epitaxial wafer 7, there are three P-pole chip units 4 and one N-pole chip unit 5. Any chip unit includes a buffer layer 31, an N-type semiconductor layer 32, a multi-quantum well layer 33, a P-type semiconductor layer 34 and an ITO conductive layer 35.

[0117] In an optional implementation of this embodiment, a plurality of second grooves are formed by etching on the buffer layer of the LED epitaxial wafer, and explosion relief channels are formed in the plurality of second grooves.

[0118] Specifically, such as Figure 8 As shown, a plurality of second grooves are etched on the buffer layer 31, and explosion relief channels are formed in the plurality of second grooves. The manufacturing process includes: setting a plurality of concave points on the substrate 71 of the LED epitaxial wafer 7, and when bonding the substrate 71 to the buffer layer 31, the convex points are pressed on the buffer layer 31 to form a plurality of second grooves. After the bonding is completed, the convex points are corroded by a convex wet method to form second grooves, and then the second grooves are filled with bonding glue to form explosion relief channels 37.

[0119] In an optional implementation of this embodiment, a plurality of first grooves are formed by etching in the N-type semiconductor layer of the LED epitaxial wafer, and an optical waveguide blocking layer is formed in the plurality of first grooves.

[0120] Specifically, such as Figure 8 As shown, a plurality of first grooves are formed by etching in the N-type semiconductor layer 32 , and metal grids are placed in the first grooves to form an optical waveguide blocking layer 36 .

[0121] S702, preparing a P electrode layer on a P-pole chip unit among the plurality of chip units to form a P electrode;

[0122] In an optional implementation of this embodiment, metal is deposited on the top surface of the P-pole chip unit 4 to prepare a P-electrode layer to form a P-electrode 41 .

[0123] Furthermore, a first insulating layer 42 is formed on the sidewall of the P-pole chip unit 4 .

[0124] S703, preparing an N electrode layer on an N-pole chip unit among the plurality of chip units to form an N electrode;

[0125] In an optional implementation of this embodiment, metal is deposited on the top surface of the N-pole chip unit 5 to prepare an N-electrode layer to form the N-electrode 51 .

[0126] Furthermore, a second insulating layer 52 is formed on the sidewall of the N-pole chip unit 5 .

[0127] Furthermore, metal is deposited again on the surface of the second insulating layer 52 on the side wall of the N-pole chip unit 5 close to the optical waveguide blocking layer 36 to form an N-electrode 51 , so that the N-electrode 51 extends and connects to the optical waveguide blocking layer 36 .

[0128] In an optional implementation of this embodiment, as Figure 9 As shown, Figure 9 A cross-sectional structural diagram of the semi-finished product after completing step S703 in the second embodiment of the present invention is shown, including three P-pole chip units 4 and one N-pole chip unit 5, a P electrode 41 and a first insulating layer 42 are formed on the P-pole chip unit 4, and an N electrode 51 and a second insulating layer 52 are formed on the N-pole chip unit 5.

[0129] In an optional implementation of this embodiment, the step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes step S704.

[0130] S704, forming a second packaging layer covering the chip array and exposing the P electrode and the N electrode;

[0131] In an optional implementation of this embodiment, a packaging glue is used to form a second packaging layer covering the chip array, and an opening is left to expose the P electrode of the P-pole chip unit and the N electrode of the N-pole chip unit.

[0132] In an optional implementation of this embodiment, a metal reinforcement layer is formed on the second packaging layer.

[0133] Specifically, a metal strengthening layer is provided in the area of ​​the second packaging layer except for the four pin electrodes.

[0134] Preferably, a metal reinforcement layer is provided at the center of the second packaging layer.

[0135] In an optional implementation of this embodiment, the step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes step S705 .

[0136] S705 , forming a P-pole pin electrode on the P-electrode exposed by the second packaging layer, and forming an N-pole pin electrode on the N-electrode exposed by the second packaging layer.

[0137] In an optional implementation of this embodiment, a P-pole pin electrode is set on the P-electrodes of three P-pole chip units exposed in the opening of the second packaging layer, and an N-pole pin electrode is set on the N-electrode of one N-pole chip unit exposed in the opening of the second packaging layer.

[0138] In an optional implementation of this embodiment, as Figure 10 As shown, Figure 10 The cross-sectional structure diagram of the semi-finished product after completing step S705 in the second embodiment of the present invention is shown. P-pole pin electrodes 43 are set on the P electrodes 41 of the three P-pole chip units 4, and an N-pole pin electrode 53 is set on the N electrode 51 of one N-pole chip unit 5.

[0139] S503 , forming a bonding layer on the chip array, and performing hot-press bonding on the color conversion layer and the chip array to form a finished LED full-color device consisting of the color conversion layer, the bonding layer, and the chip array stacked in sequence.

[0140] In an optional implementation of this embodiment, a bonding layer is formed on one side of the buffer layer of the chip array, and the protective layer side of the quantum dot color conversion structure of the color conversion layer is hot-pressed bonded to the bonding layer on the chip array to form a finished LED full-color device consisting of a color conversion layer, a bonding layer and a chip array stacked in sequence.

[0141] It should be noted that before performing this step, the substrate 71 of the chip array needs to be peeled off and then a bonding layer is formed.

[0142] In an optional implementation of this embodiment, as Figure 11 As shown, Figure 11 The cross-sectional structure diagram of the finished product after completing step S503 in the second embodiment of the present invention is shown. The color conversion layer 1 and the chip array 3 are bonded together based on the bonding layer 2 to form the finished product.

[0143] In summary, embodiment 2 of the present invention provides a method for manufacturing an LED full-color device, which is used to manufacture the LED full-color device in embodiment 1. By forming a color conversion layer and a chip array separately and then bonding them, it replaces the mass transfer process and the rewiring process, and the preparation process is simpler. The LED full-color device manufactured is formed by setting a color conversion layer composed of several quantum dot color conversion structures and a chip array composed of several P electrodes and N electrodes, and bonding the two together through a bonding layer. The LED full-color device has a simpler structure, a simpler preparation process, and a lower production cost, and effectively optimizes the luminous efficiency and luminous accuracy of the device.

[0144] The above is a detailed introduction to an LED full-color device and a method for manufacturing an LED full-color device provided by the present invention. A person skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be completed by instructing related hardware through a program. The program can be stored in a computer-readable storage medium, and the storage medium may include: read-only memory (ROM), random access memory (RAM), disk or optical disk, etc.

[0145] In addition, the embodiments of the present invention are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A full-color LED device, characterized in that: The LED full-color device includes a color conversion layer, a bonding layer and a chip array stacked in sequence, wherein the color conversion layer and the chip array are bonded together based on the bonding layer; The color conversion layer includes a plurality of quantum dot color conversion structures, and any one of the quantum dot color conversion structures includes a light conversion layer; The chip array includes a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer and an ITO conductive layer stacked in sequence, and a plurality of chip units are formed on the buffer layer, the N-type semiconductor layer, the multi-quantum well layer, the P-type semiconductor layer and the ITO conductive layer; The positions of the plurality of chip units and the plurality of quantum dot color conversion structures are arranged correspondingly in the vertical direction.

2. The full-color LED device according to claim 1, characterized in that: The quantum dot color conversion structure further includes a light filtering layer and a protective layer, and the light filtering layer, the light conversion layer and the protective layer are stacked in sequence.

3. The full-color LED device according to claim 2, characterized in that: The plurality of quantum dot color conversion structures include a red light quantum dot color conversion structure and a green light quantum dot color conversion structure; The color conversion layer also includes a blue light filtering structure, which includes a blue light filtering layer, a transparent light blocking layer and a blue light protection layer stacked in sequence.

4. The full-color LED device according to claim 3, characterized in that: The area of ​​the light conversion layer of the green light quantum dot color conversion structure is greater than the area of ​​the light conversion layer of the red light quantum dot color conversion structure.

5. The full-color LED device according to claim 3, characterized in that: The color conversion layer also includes a transparent substrate and a first encapsulation layer. The transparent substrate is pressed onto the surface of the light filtering layer of the quantum dot color conversion structure, and is pressed onto the surface of the blue light filtering layer of the blue light filtering structure. The first encapsulation layer covers the multiple quantum dot color conversion structures and the blue light filtering structures.

6. The full-color LED device according to claim 1, characterized in that: The plurality of chip units include a plurality of P-pole chip units and a plurality of N-pole chip units. P electrodes are formed on the P-pole chip units, and N electrodes are formed on the N-pole chip units.

7. The full-color LED device according to claim 6, characterized in that: The chip array further includes a plurality of P-pole pin electrodes and a plurality of N-pole pin electrodes, wherein the P-pole pin electrodes are formed on the P-electrodes, and the N-pole pin electrodes are formed on the N-electrodes.

8. The full-color LED device according to claim 1, wherein: A plurality of first wire grooves are opened in the N-type semiconductor layer, and the plurality of first wire grooves are filled with optical waveguide blocking layers.

9. The full-color LED device according to claim 1, characterized in that: A plurality of second wire grooves are provided in the buffer layer, and explosion relief channels are formed in the plurality of second wire grooves.

10. The full-color LED device according to claim 1, wherein: The LED full-color device further includes a second packaging layer, which covers the chip array.

11. The full-color LED device according to claim 11, characterized in that: A metal strengthening layer is provided on the second packaging layer.

12. A method for manufacturing a full-color LED device, characterized in that: The manufacturing method is used to manufacture the LED full-color device according to any one of claims 1 to 11, and the method comprises: forming a plurality of quantum dot color conversion structures and a blue light filtering structure on a transparent substrate to form a color conversion layer; Perform deep etching on the LED epitaxial wafer to form a chip array consisting of several P-pole chip units and several N-pole chip units; A bonding layer is formed on the chip array, and the color conversion layer and the chip array are heat-pressed and bonded to form a finished LED full-color device consisting of the color conversion layer, the bonding layer and the chip array stacked in sequence.

13. The method for manufacturing a full-color LED device according to claim 12, wherein: The step of forming a plurality of quantum dot color conversion structures and a blue light filtering structure on a transparent substrate to form a color conversion layer includes: A light filtering layer, a light conversion layer and a protective layer are sequentially prepared on the transparent substrate, and a blue light filtering layer, a transparent light blocking layer and a blue light protective layer are sequentially prepared, and then a first encapsulation layer is formed to form a color conversion layer composed of a plurality of quantum dot color conversion structures and a blue light filtering structure.

14. The method for manufacturing a full-color LED device according to claim 12, wherein: The step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units includes: Deep etching is performed on the buffer layer, N-type semiconductor layer, multi-quantum well layer, and P-type semiconductor layer of the LED epitaxial wafer, and an ITO conductive layer is prepared on the surface of the P-type semiconductor layer to form a plurality of chip units; Preparing a P-electrode layer on a P-pole chip unit among the plurality of chip units to form a P-electrode; An N-electrode layer is prepared on the N-pole chip units among the plurality of chip units to form an N-electrode.

15. The method for manufacturing a full-color LED device according to claim 12, wherein: The step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P electrodes and a plurality of N electrodes further comprises: A plurality of second wire grooves are formed by etching on the buffer layer of the LED epitaxial wafer, and explosion relief channels are formed in the plurality of second wire grooves.

16. The method for manufacturing a full-color LED device according to claim 12, wherein: The step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes: A plurality of first grooves are formed by etching in the N-type semiconductor layer of the LED epitaxial wafer, and optical waveguide blocking layers are formed in the plurality of first grooves.

17. The method for manufacturing a full-color LED device according to claim 14, wherein: The step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes: A second packaging layer is formed to cover the chip array and expose the P electrode and the N electrode.

18. The method for manufacturing a full-color LED device according to claim 17, wherein: The step of performing deep etching on the LED epitaxial wafer to form a chip array consisting of a plurality of P-pole chip units and a plurality of N-pole chip units further includes: A P-pole lead electrode is formed on the P-electrode exposed by the second packaging layer, and an N-pole lead electrode is formed on the N-electrode exposed by the second packaging layer.

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