Power semiconductor module with pressure contact element

Abstract

The invention relates to a power semiconductor module having at least one power semiconductor element (ch HS / LS) in a housing (h), the housing (h) containing at least one liquid cooling medium (liq), the housing (h) being connected to the power semiconductor element (ch HS / LS) in a heat-conducting manner by means of the cooling medium (liq), the cooling medium (liq) being in particular a dielectric liquid and being inert, and the cooling medium (liq) being in the form of a liquid coolant. The power semiconductor module comprises a pressure contact element (buf) for the at least one semiconductor element (ch HS / LS), which pressure contact element is pressed against the at least one semiconductor element (ch HS / LS) by means of at least one pressing device (sp) in order to establish an electrical contact, and wherein the pressure contact element (buf) is pressed against the at least one semiconductor element (ch HS / LS) by means of at least one pressing device (sp). The pressure contact part (buf) is pressed against the at least one semiconductor element (ch HS / LS) by means of at least one pressing device (sp) via the housing (h) and forms a power converter.

Description

Technical Field

[0001] The invention relates to a power semiconductor module with a pressure contact component and a power converter having at least one such power semiconductor module. Background Art

[0002] Environmental design aspects and product implementation are also becoming increasingly important in the electronics sector. There is a growing trend towards implementing more so-called eco-design elements in products. Eco-design is particularly important in power electronics, driven by e-mobility, and in economically important sectors such as industrial drives and energy conversion, where its economic and environmental significance is increasing.

[0003] In particular, in power modules, a specific area of ​​power electronics, the cyclic switching of semiconductor components (such as transistors and thyristors) is used to convert voltage, current, or frequency, for example to drive an electric motor. Power modules contain a variety of problematic properties and materials from the perspective of recyclability or overall environmental friendliness.

[0004] Ecodesign generally avoids the use of bonded, inseparable, and energy-intensive connections and materials. This has been difficult to achieve in power electronics due to the critical functions of the components and the extremely high demands on high electrical insulation, good thermal management, and high reliability.

[0005] To this end, a first method, for example, adopts the so-called SharC technology, as described in WO2021254679A1, or by pressurizing the lead frame, as disclosed in DE102016217007A1.

[0006] Here, the conductive contact is created via pressure contact elements. This connection can be removed again for recycling or repair. Due to the high currents flowing in power electronics and the resulting low contact resistance required, high pressure must be applied to the contacts. For this reason, the connection to the chip bottom is often still a material-bonded solder or sintered connection to ensure good cooling of the chip or power module. The known structure described still uses a potting material made of insulating silicone to ensure electrical insulation.

[0007] Therefore, from a technical point of view, it is necessary to propose an improved solution that avoids the disadvantages known in the prior art. In particular, the proposed solution should enable detachable pressure contact components while ensuring efficient cooling capabilities for the power semiconductors.

[0008] The above-mentioned object to be achieved by the present invention is achieved by a power semiconductor module according to claim 1. Advantageous embodiments of the invention form the subject matter of the dependent claims. Summary of the Invention

[0009] The power semiconductor module according to the present invention comprises at least one power semiconductor element in a housing, wherein the housing contains at least one liquid cooling medium. The power semiconductor module is thermally connected to the housing via a cooling medium, the cooling medium in particular comprising a dielectric liquid. Preferably, a chemically inert liquid is used as the cooling medium, the liquid being chemically inert at least to the materials used. The power semiconductor module further comprises a pressure contact part for at least one power semiconductor element, the pressure contact part being pressed onto the at least one semiconductor element by at least one pressing device, thereby achieving electrical contact. In particular, the pressure contact part is pressed onto the at least one semiconductor element by the housing. Thus, the housing applies a mechanical force to the at least one pressing device. In particular, mechanical force is applied to the pressing device and thereby to the pressure contact part by closing the housing. Alternatively, there may be a pressure mechanism that can be activated independently of the closing of the housing, such as a screw mechanism. The heat to be discharged can be released outwards by heat conduction.

[0010] The pressure contact component has advantages including, but not limited to, the following, for example, that conventional wire bonding can be avoided.

[0011] In a particularly advantageous embodiment of the invention, the housing of the power semiconductor module has at least one cooling element, via which heat is transferred to the heat sink. The at least one cooling element is in an electrically insulating and thermally conductive connection to a cooling medium, in particular via the housing.

[0012] In another embodiment of the present invention, the inert coolant and the housing can be electrically insulated from each other. Alternatively, they can also be at the same potential, which is isolated from other potentials.

[0013] In conventional wire-bonded power modules with a baseplate, the first production step involves forming a material-bonded solder connection between the semiconductor chip and the circuit carrier, typically a so-called DCB (direct copper bonded ceramic). The production of the ceramic itself is already very energy-intensive, involving both the sintering of the ceramic itself at temperatures exceeding 1500°C and the application of the conductive copper layers. These two copper layers form a material-bonded connection to the upper and lower surfaces of the ceramic. The connection between the copper layers and the ceramic is formed under high-energy conditions at 1065°C.

[0014] Thus, such energy-intensive production steps are avoided in the power module according to the invention. Since the electrical insulation is achieved by the dielectric liquid, insulating ceramics are no longer necessary.

[0015] Furthermore, in the prior art, after chip soldering, so-called system soldering is performed. In this process, the chip and DCB assembly is again bonded to a relatively thick metal base plate in a material-bonded manner. In a further step, the top contacting of the chip is achieved via a large number of wire bonds, which are micro-soldered to corresponding mating contacts on the chip metallization and the DCB. Therefore, another advantage of the power semiconductor module according to the present invention is that a large number of material-bonded connections are also avoided. Consequently, the proposed recyclable semiconductor module does not require inseparable or difficult-to-separate material connections.

[0016] Another advantage is provided by the cooling medium: with the proposed power semiconductor device, encapsulation of the entire circuit with silicone is unnecessary, as the cooling medium also acts as an electrical insulator. Furthermore, gluing the plastic housing to the base plate, as is common in the prior art, is avoided, as the housing can advantageously be sealed, for example, instead of being glued.

[0017] In the context of this patent application, a power semiconductor module refers to a power semiconductor device in which voltage, current, or frequency conversion is achieved by periodically switching semiconductor elements (such as transistors or thyristors). For example, this frequency conversion can be used to drive an electric motor.

[0018] The power module may in particular be a power semiconductor unit. For example, in a modular structure composed of a plurality of power module units, a converter with scalable power may be formed.

[0019] Power semiconductor components can be, for example: switching elements, such as diodes in power converters; thyristors, for example for switching, controlling and regulating, in particular thyristors with control electrodes; bidirectional thyristors (Triacs), for example for switching alternating current; transistors, such as (power type) MOSFETs or IGBTs.

[0020] The semiconductor component, in particular the power semiconductor component, is preferably a semiconductor chip. The semiconductor chip is mounted as an unpackaged bare die. For example, it can be a semiconductor wafer with devices arranged thereon, such as transistors, MOSFETs, or diodes.

[0021] In a preferred embodiment of the present invention, the power semiconductor module includes a pressure contact element for at least one semiconductor component, which is particularly designed as a spacer and / or pressure column. Furthermore, a stress compensation layer may be provided on the semiconductor component and / or the pressure contact element. In particular, the compensation layer and / or the spacer mechanically positions the chip, i.e., the semiconductor component, due to its geometric structure. Alternatively or additionally, the compensation layer and / or the spacer may be provided with a volatile temporary adhesive material.

[0022] In another preferred embodiment of the power semiconductor module according to the invention, the pressure contact element (buf) is pressed onto the at least one semiconductor component via the housing (h) by at least one pressing device (sp). For this purpose, the housing is particularly preferably adapted for the pressure contact element, in particular by means of mechanical retaining and / or guiding means, such as grooves, slots, guide rails, threads and / or hooks.

[0023] In particular, to close the housing, a corresponding force is applied, thereby ensuring that there is sufficient pressure to achieve good electrical contact.

[0024] In an alternative embodiment, the preload force is applied after the housing is closed, for example by intrinsic deformation of the housing or housing segments, in particular by thermal deformation, material shrinkage or preload. In another exemplary embodiment, the housing segments are applied by external deformation, for example by tightening external preload screws on the housing parts.

[0025] The power semiconductor module according to the invention is particularly preferably designed to include at least one pressure device, for example a spring, a screw, a bracket and / or a pressure compensation layer.

[0026] In another advantageous embodiment of the invention, the power semiconductor module is further designed to establish electrical contact between at least one semiconductor element (ch HS / LS) and at least one load terminal (loa) via a contact element (buf).

[0027] In a further advantageous embodiment of the power semiconductor module according to the invention, the housing (h) hermetically encapsulates the semiconductor elements (ch HS / LS) and the cooling medium (liq).

[0028] In another advantageous embodiment of the power semiconductor module according to the invention, the housing (h) has seals, via which the load terminals (IoA) and / or the gate terminals (GHS / LS) are led out of the housing. In another exemplary embodiment of the power semiconductor module according to the invention, the housing (h) has further mechanical connections, in particular slots and / or plug connections.

[0029] In another preferred embodiment of the power semiconductor module according to the present invention, the housing wall of the housing (h) is designed to exert a contact pressure on the pressing device (sp) and the electrical contact member (buf) when the housing (h) is in a closed state, the pressure required to achieve electrical contact. In particular, structures can be provided on and / or within the housing to strengthen or reinforce the housing so as to enable the necessary pressure to be exerted.

[0030] The housing of one embodiment of the power semiconductor module according to the present invention can advantageously include at least one sealable inlet and / or outlet device for a liquid coolant (Liq). This has the advantage that the inert liquid can be recycled. Even components can be repaired while the housing is open. The inert coolant selected must ensure that the components of the power semiconductor module are not chemically attacked.

[0031] In an exemplary embodiment of the power semiconductor module according to the present invention, at least one surface within the housing (h), in particular the surface of the pressing means (sp), or at least a portion of the housing inner wall, has a surface structure. Particularly preferred are structures with increased surface area, such as grooves, columnar structures, or trenches, thereby ensuring particularly efficient heat transfer with the liquid cooling medium. This embodiment has the further advantage of promoting efficient boiling.

[0032] In another exemplary embodiment of the power semiconductor module according to the present invention, the housing material consists of a chemical compound material having thermal and chemical stability in a temperature range of -200°C to 400°C.

[0033] In particularly preferred variations of the power semiconductor module according to the present invention, the housing material and / or housing components are recyclable. Specifically, the material used is typically a single material, i.e., non-composite, unfilled, and flame retardant-free. Recyclable plastics may also be used. Metallic materials are preferred, and more preferably, single metallic materials. These offer advantages in terms of mechanical and thermal properties. Furthermore, the housing components are preferably connected using removable components, preferably with markings for recycling.

[0034] In another preferred embodiment of the power semiconductor module according to the invention, the module comprises a plurality of power semiconductor elements which are arranged in a stacked manner such that they can be electrically contacted simultaneously by means of the same pressing device(s) via the electrical contacting elements.

[0035] In a further exemplary embodiment of the power semiconductor module according to the invention, the housing has predetermined breaking points and / or markings for simplified opening.

[0036] In another particularly advantageous embodiment of the power semiconductor module according to the invention, the housing has means for fill level monitoring and / or temperature monitoring. These may be sensors for temperature and / or fill level monitoring, for example.

[0037] The power converter according to the present invention has at least one power semiconductor module according to the present invention. Therefore, a combination of multiple power semiconductor modules is also advantageous. Such a power converter can advantageously utilize modularity to achieve scalability of its power.

[0038] In summary, the proposed solution avoids drawbacks in particular with regard to recyclability and energy balance:

[0039] As far as possible, connections made with high-value materials such as solder, metals and semiconductors that are difficult to separate are eliminated or at least their number is significantly reduced.

[0040] Energy consumption during the manufacturing process is reduced, especially compared to previous chip manufacturing, DCB processing, soldering, and thermal curing of adhesives and silicone gels.

[0041] At the same time, a new standard module structure was proposed, which is competitive with existing manufacturing processes and products in terms of manufacturability and quality. The high electrical insulation previously achieved with ceramic or silicone gel is now achieved with liquid insulation. The good thermal management previously achieved with soldered connections and a baseplate is now also ensured by the liquid insulation and housing structure. The required high component reliability is achieved with force-fitting electrical connections that are ideally matched in terms of material technology and mechanics.

[0042] To this end, the chip, with pressure contact components on the upper and lower surfaces, is immersed in an inert and insulating cooling medium, and the heat loss of the chip is dissipated through an external housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Examples and embodiments of the present invention will be described in conjunction with the accompanying Figures 1 to 6 Described by way of example:

[0044] Figure 1 A half-bridge circuit topology with two MOSFET transistors is shown.

[0045] Figure 2 A top view of a power module, for example a half-bridge power module, is shown.

[0046] Figure 3 Shown along Figure 2 Section III of the power module is shown.

[0047] Figure 4 Shown along Figure 2 Section IV of the power module is shown.

[0048] Figure 5 A cross section of an alternative arrangement of a power module is shown.

[0049] Figure 6 A modular converter arrangement is shown.

[0050] In the embodiments and drawings, identical or functionally identical elements may be denoted by the same reference numerals. The illustrated elements and their relative size ratios should not be considered to be drawn to scale. Instead, individual elements may be shown enlarged for better illustration and / or understanding. DETAILED DESCRIPTION

[0051] Figure 1 A half-bridge circuit topology is shown, comprising two MOSFET transistors, corresponding to a top view of a power module (eg, an inverter), as shown in FIG. Figure 2 In an exemplary embodiment of the power module, each topology switch uses two MOSFET transistors. HS represents high side and LS represents low side. Figure 1 and Figure 2 The operating mode of the power module shown is based on the fact that both the top and bottom contacting of the chip ch HS / LS is produced by means of compression springs sp. Figure 3 and Figure 4 As shown in the cross-sectional views III / IV of FIG, multiple chip layers can be stacked on top of each other and simultaneously contacted. The entire stack is enclosed in an inert liquid, such as 3M Fluorinert or 3M Novec, which serves as an insulating and cooling medium. Figure 5 An alternative lateral arrangement of the power modules is shown.

[0052] The power semiconductor modules shown each contain a semiconductor chip ch provided with a stress compensation layer (so-called buffer layer) and / or a spacer buf. Additionally or alternatively, the chip ch can also be electrically contacted directly via the pressure pillar buf, or the stress compensation layer can be located on the pressure pillar.

[0053] The buffers, spacers, and / or pressure pins (buf) can have various geometric shapes, such as cylindrical or continuous free-form surfaces. They can also have varying thicknesses. This allows, for example, adjusting the insulation distance. When using pressure pins for direct contact, they can be made of different conductive materials.

[0054] The buffers, spacers and / or pressure pillars buf may be implemented in such a way that they mechanically position the chip ch by their geometry and / or be provided with a volatile adhesive material.

[0055] The buffer, spacer and / or pressure column buf can be connected to the semiconductor element ch in a material-fitting manner or formed on the load terminal loa and / or the gate terminal G HS / LS. Alternatively, they can also be arranged as an independent layer between the semiconductor chip ch and the load terminal loa.

[0056] The buffers, spacers, and / or pressure pillars (buf) can have a coefficient of thermal expansion that matches that of the chip (ch). They can, for example, be made of molybdenum or a composite material such as CuCNF. Alternatively or additionally, the buffers, spacers, and / or pressure pillars (buf) can also have a deformable, subdivided geometry that compensates for thermal stresses.

[0057] For example, pressure can be applied to the buffer buf and the chip ch by suitable means sp, such as springs, screws, brackets or a pressure compensation layer (eg made of silicone), thereby forming electrical contacts on the upper and lower sides of the chip ch.

[0058] exist Figures 3 to 5 As shown in FIG, the power module includes a housing h containing an inert dielectric liquid liq for cooling and insulation, in which the pressure-contacted chip ch is immersed. Ideally, all free surfaces of the pressure device sp, which absorbs heat from the chip ch and transfers it to the dielectric liquid liq, are provided with a surface structure optimized for efficient boiling. For example, this surface structure can include trenches or pins.

[0059] For better thermal management, heat spreading layers, typically made of copper or a highly thermally conductive composite material, can be integrated into the structure close to the chip. Such a heat spreading layer increases the surface area to be cooled in the boiling bath.

[0060] Sensors for temperature monitoring and / or for level monitoring can be conveniently provided. The housing h is particularly designed to hermetically enclose the cooling medium liq and the chip ch. For this purpose, the housing is preferably hermetically sealed by a sealing member.

[0061] Furthermore, the housing primarily consists of a material or chemical compound or primarily includes a material or chemical compound that is soluble at a specific temperature and / or a substance that is not normally present during use. To this end, the housing surface preferably includes instructions or diagrams regarding recycling regulations and the materials on the housing. This instruction is particularly preferably printed in the form of a machine-readable code that points to centrally available recycling instructions.

[0062] The housing h can also be designed particularly advantageously to derive the required contact pressure completely or partially from the contact pressure of the external connecting conductors. For example, for this purpose, the housing h is pushed into the slot, thereby exerting a corresponding compressive force on the housing half shells.

[0063] Furthermore, insulating subareas iso, for example made of ceramic, are provided within the housing h or within the housing material. These serve to isolate different potentials on the housing shell or between the load terminals loa. The housing h typically comprises at least two housing shells, which are combined to form the housing h. Seals are provided at the contact edges of the housing shells. Furthermore, the housing is preferably designed to ensure that the chip ch is always completely covered by the liquid liq, regardless of its orientation or the orientation of the entire power module.

[0064] The inert liquid Liq is used to cool and insulate the crimped circuits, achieving efficient double-sided liquid immersion cooling or boiling bath cooling. This efficient heat dissipation enables extremely high chip utilization. This in turn saves semiconductor and module area, resulting in economic and ecological benefits. The efficient cooling also extends the service life of the components. The housing may also include one or more closures for filling and / or emptying the housing H with the dielectric liquid Liq. These closures are preferably screw caps, and the sealing method ensures that the required sealing properties of the housing are not compromised.

[0065] Cooling structures (co) placed directly on the housing surface can be designed as fins, needles, cooling channels, or other structures that increase the surface area for dissipating module heat loss. Consequently, heat loss is dissipated through the housing (h) to a conductive or external contact medium. This enables simple heat dissipation within the inverter without the need for additional heat transfer. Avoiding such heat transfer advantageously reduces or eliminates the need for thermal paste, eliminates the need for large and expensive heat sinks, and allows for modular and scalable power units, such as in inverters.

[0066] An exemplary embodiment of a housing h with predetermined breaking points and / or markings is particularly advantageous for recycling, wherein the housing h can be simply opened. When the components need to be disassembled and processed, the individual components can be removed as quickly and simply as possible. If the components need to be repaired, the simple accessibility ensures that no further irreparable damage is caused to the individual components, especially the semiconductor chip ch, when the housing h is opened. In order to be able to reach the internal components as easily as possible, this simpler housing opening can be achieved, for example, by incorporating a housing structure that breaks in a targeted manner when the module is attached but does not open the housing h or affect its sealing and contact pressure function for pressure contact. Due to the targeted pre-damage, the module is easier to disassemble and decompose after the "first service life". At the same time or as an alternative, the housing h can include some structures that increase the rigidity of the housing so that the compressive force required for pressure contact can be applied.

[0067] In this particularly advantageous embodiment of the arrangement, the electrical conductors located within the housing h are immersed in the dielectric liquid liq. For example, the gate terminals GLS / HS or the load terminals Ioa, such as the AC terminals, DC+ terminals, or DC- terminals of a transistor, can have channels, for example, they can be perforated, so that they can pass through the lateral flow of the dielectric liquid liq. This further improves thermal management, promotes heat dissipation, and increases the surface area of ​​the components that need to be cooled.

[0068] For connecting the gate structures GLS / HS or for potential contacting on the upper and lower sides of the chip ch, wire bonds can be provided, but more preferably separately provided pressure contacts can be provided. These contacts can be designed in particular as spring contact pins.

[0069] like Figures 3 to 5 As shown, multiple chips ch can be contacted simultaneously by compressive forces in a stacked arrangement. The number of layers of semiconductor components ch that can be realized here is greater than that shown in the figure.

[0070] Alternatively, however, a power module structure comprising a hermetically encapsulated housing and liquid cooling and insulation can also include semiconductor chips ch, which are contacted only on one side by compression forces and whose second side is typically placed on a DCB (direct copper bonding) or printed circuit board. However, an important advantage of the proposed power semiconductor module structure is that the electrical contacts in as many or all components as possible, in particular the contacts of the power electronic chips, can be achieved on one or both sides by compression forces without the need for material-bonded connections. This allows easy disassembly for repair, refurbishment or recycling. Material, such as solder material, and energy-intensive manufacturing processes are saved. Particularly advantageous multilayer low-inductance structures can be achieved. The pressure contacts have a longer service life, which helps to increase the overall service life of the components.

[0071] Figure 6 This diagram shows a modular inverter arrangement. To achieve this, multiple partial power module units are interconnected in a modular arrangement, similar to battery cells. This design allows for the creation of inverters with scalable power. Generally, this system is structurally simple and easy to install. Alternatively, the modular cells can be inserted into spring contacts, or pressure contacts, to achieve electrical contact.

[0072] The proposed technology thus provides a method for manufacturing power modules with a very low percentage of material-bonded connections and overall reduced material and energy consumption. High electrical insulation is maintained during the manufacturing process, and cooling of the semiconductor chips is significantly improved. By minimizing the number of material-bonded connections in the power module, as well as its overall mass and volume, a module is created that can be easily disassembled into its individual components, making it highly suitable for recycling and repair.

[0073] Furthermore, the stacked 3D structure makes it possible to realize power modules with almost ideal ultra-low inductance. The stacked structure allows the chips to be arranged in an electrically advantageous manner. This allows for faster switching and more efficient utilization of the chips due to improved cooling.

[0074] Although the present invention has been described in detail and by way of preferred embodiments, the present invention is not limited to the disclosed embodiments and modifications may be made thereto by those skilled in the art without departing from the scope of protection of the present invention as defined by the following claims.

[0075] Reference Number List

[0076] G HS Gate high side

[0077] G LS Gate low side

[0078] AC AC terminal

[0079] DC+ DC+ terminal

[0080] DC-DC-Terminal

[0081] A Section A

[0082] Section B

[0083] b Bonding wire

[0084] h Airtight housing

[0085] buf stress buffer

[0086] liq inert liquid

[0087] iso insulation

[0088] sp spring

[0089] loa load terminal

[0090] ch HS chip HS

[0091] ch LS Chip LS

[0092] co cooling ribs

[0093] sen sensor.

Claims

1. A power semiconductor module, having at least one power semiconductor component (ch HS / LS) in a housing (h), in, The housing (h) contains at least one liquid cooling medium (liq), wherein the housing (h) and the power semiconductor element (ch HS / LS) are connected in a heat-conducting manner via the cooling medium (liq), Wherein, the cooling medium (liq) is especially a dielectric liquid, wherein the power semiconductor module comprises a pressure contact part (buf) for at least one semiconductor element (chHS / LS), the pressure contact part being pressed onto the at least one semiconductor element (chHS / LS) by means of at least one pressing device (sp) so as to establish electrical contact, and wherein the housing (h) is designed to connect the pressure contact part (buf) to at least one of the power semiconductor components in a force-fitting manner by means of the at least one pressing device (sp), and In this case, an electrical contact is established between the at least one semiconductor component (ch HS / LS) and a load terminal (loa) by means of the pressure contact element (buf).

2. The power semiconductor module according to claim 1, wherein: The pressure contact element (buf) for the at least one semiconductor component (chHS / LS) is designed as a stress compensation layer, a spacer or a pressure column.

3. The power semiconductor module according to claim 2, wherein: The at least one pressure device (sp) comprises in particular a spring, a screw, a bracket or a pressure compensation layer.

4. The power semiconductor module according to claim 1, wherein: The housing (h) hermetically encapsulates the semiconductor element (ch HS / LS) and the cooling medium (liq).

5. The power semiconductor module according to claim 6, wherein: The housing (h) has a seal through which the load terminal (loa) and / or the gate terminal (G HS / LS) are led out.

6. The power semiconductor module according to claim 1, wherein: The housing wall of the housing (h) is designed such that, when the housing (h) is closed, it exerts the contact pressure required for establishing the electrical contact on the pressing device (sp) and the contact element (buf). 7 . The power semiconductor module according to claim 1 , comprising at least one sealable filling and / or discharge device for the liquid cooling medium (liq) in the housing (h).

8. The power semiconductor module according to claim 1, wherein: At least one surface located within the housing (h), in particular the surface of the pressing device (sp) or at least part of the inner wall of the housing, has a surface structure, in particular grooves, pins, grooves, to ensure particularly efficient heat transfer to or from the liquid cooling medium.

9. The power semiconductor module according to claim 1, wherein: The housing (h) has a thermally and chemically stable connection in a temperature range of -200°C to 400°C.

10. The power semiconductor module according to claim 9, wherein: The shell compound is recyclable.

11. The power semiconductor module according to claim 1, comprising a plurality of semiconductor elements (ch) arranged in a stacked manner such that they are electrically contacted simultaneously via contact elements (buf) by means of the same pressing device (sp).

12. The power semiconductor module according to claim 1, wherein: The housing (h) has predetermined breaking points and / or markings for simplified opening.

13. The power semiconductor module according to claim 1, wherein: The housing (h) has means (sen) for level monitoring and / or temperature monitoring. 14 . A power converter comprising at least one power semiconductor module according to claim 1 .

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