Semiconductor film manufacturing machine and semiconductor film preparation method

Abstract

According to the semiconductor thin film manufacturing machine and the semiconductor thin film preparation method provided by the invention, the cleaning chamber, the cooling chamber, the PVD titanium chamber and the ALD-like titanium nitride chamber are integrated in the same machine, and an adhesive layer and a barrier layer of a CT structure are integrated in the same machine, so that the idle time between manufacturing procedures is greatly shortened, and the productivity is effectively guaranteed; in addition, the barrier layer made of the titanium nitride material is prepared by adopting the ALD-like titanium nitride chamber, so that the step covering uniformity of the barrier layer can be effectively ensured; and finally, performing in-situ plasma treatment on the titanium nitride barrier layer prepared by adopting the ALD-like process by adopting an in-situ plasma treatment chamber, so that impurity elements, such as carbon and hydrogen impurity elements, especially carbon impurity elements in the titanium nitride barrier layer can be discharged, and the purity of the film layer is effectively improved, thereby improving the barrier capability of the titanium nitride barrier layer and improving the yield of the film layer. The volcanic effect is effectively inhibited.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a semiconductor thin film manufacturing machine and a semiconductor thin film preparation method. Background Art

[0002] In semiconductor manufacturing, thin films are deposited onto wafer surfaces using appropriate deposition methods. These deposition methods are typically used to grow silicon oxide, silicon nitride, or polysilicon. Recently, they have also been used to grow metal layers such as tungsten, titanium, copper, aluminum, and their alloys, as well as barrier layers such as titanium nitride and tantalum nitride. These processes can be performed in cluster tools with multiple reaction chambers, integrating different processes into a single system, reducing idle time between processes and increasing throughput.

[0003] At present, in the MEOL CT process of semiconductor manufacturing, titanium is generally used as the adhesion layer 11, titanium nitride is used as the barrier layer 12, and tungsten is used as the connecting metal wire 13. Figure 3 Tungsten is deposited by CVD reaction, and the reaction gas contains fluorine. Fluorine reacts with titanium to generate titanium fluoride gas, forming a "volcano effect" defect, which affects the quality of the film layer. Figure 4 A in the figure is a volcanic eruption-like defect produced on the surface of the titanium nitride film layer. To avoid this "volcano effect" defect, the thickness of the titanium nitride barrier layer is generally increased by sacrificing CD to prevent fluorine-containing gases from passing through the titanium nitride barrier layer and reacting with the titanium adhesion layer. However, as the size of semiconductor devices continues to shrink, the requirements for the structure are becoming increasingly higher. It is necessary to further thin the thickness of the titanium nitride barrier layer while ensuring step coverage uniformity and production capacity. However, this places severe demands on the barrier capability of the titanium nitride barrier layer. Summary of the Invention

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a semiconductor thin film manufacturing machine and a semiconductor thin film preparation method, which are used to solve the problem in the prior art that as the size of semiconductor devices continues to shrink, in the structure of using titanium as an adhesion layer, titanium nitride as a barrier layer, and tungsten as a connecting metal wire when preparing MEOLCT, the increasingly thin titanium nitride barrier layer cannot effectively prevent the fluorine-containing gas from reacting with the titanium adhesion layer to form a "volcano effect" defect.

[0005] To achieve the above-mentioned and other related objectives, the present invention provides a semiconductor thin film manufacturing machine, comprising: a first vacuum transfer chamber, a second vacuum transfer chamber, at least one cleaning chamber, at least one cooling chamber, a PVD titanium chamber, an ALD-like titanium nitride chamber, and an in-situ plasma processing chamber; wherein:

[0006] The cleaning chamber is disposed outside the first vacuum transfer chamber; the PVD titanium chamber, the ALD-like titanium nitride chamber, and the in-situ plasma processing chamber are disposed outside the second vacuum transfer chamber; and the at least one cooling chamber is disposed between the first vacuum transfer chamber and the second vacuum transfer chamber.

[0007] The first vacuum transfer chamber and the second vacuum transfer chamber are used to transfer the wafer to be processed to the required chamber;

[0008] The cleaning chamber is used to clean the wafer to be processed;

[0009] The at least one cooling chamber is used to cool the wafer to be processed;

[0010] The PVD titanium chamber is used to deposit a titanium adhesion layer in a PVD process on the surface of the wafer to be processed;

[0011] The ALD-like titanium nitride chamber is used for depositing a titanium nitride barrier layer on the surface of a wafer to be processed in an ALD-like process;

[0012] The in-situ plasma processing chamber is used to perform in-situ plasma treatment on a wafer to be processed having a titanium nitride barrier layer deposited on its surface after being processed in the ALD-like titanium nitride chamber.

[0013] Optionally, the in-situ plasma processing chamber comprises: a cavity, a cover, a base accommodated in the cavity, a radio frequency bias power supply, a radio frequency starting power supply, an inductor coil, a pressure controlled pump and a plurality of air inlet pipes; wherein,

[0014] The cover is buckled over the cavity to form a sealed cavity between the two, and the inner side of the cover has a receiving cavity, which can accommodate the wafer to be processed; the inductor coil is embedded in the interior of the cover and connected to an external RF starting power supply; the base is used to support the wafer to be processed and can be raised and lowered in the vertical direction;

[0015] The pressure control pump is connected to the cavity to control the vacuum degree of the cavity;

[0016] A plurality of the air inlet pipes are in communication with the cavity to introduce different types of required gases into the cavity;

[0017] The radio frequency bias power supply is arranged at the bottom of the base to attract the charged particles in the sealed cavity and make them move toward the surface of the base.

[0018] Furthermore, the in-situ plasma processing chamber also includes an impedance point automatic switching device arranged on the outside, and the impedance point automatic switching device is connected to the inductor coil and the RF ignition power supply respectively to automatically adjust the impedance of the inductor coil as required, so that the RF ignition power supply and the inductor coil impedance are matched to realize the ignition of the gas in the sealed cavity.

[0019] Optionally, the cover body includes a metal shielding cover and a quartz cover; the metal shielding cover has a cavity inside, and the cavity is adapted to the shape of the quartz cover; the metal shielding cover is adapted to cover the outside of the quartz cover.

[0020] Furthermore, the outer contour of the metal shielding cover is a rectangular parallelepiped; and the quartz cover is an arc-shaped cover with consistent inner and outer shapes.

[0021] Furthermore, the inductor coil is embedded in the metal shielding cover through an insulating bracket.

[0022] Optionally, the top contour of the accommodating cavity inside the cover body is arc-shaped.

[0023] The present invention also provides a method for preparing a semiconductor thin film, the method comprising the following steps:

[0024] Providing a semiconductor thin film manufacturing machine as described in any one of the above;

[0025] transferring the wafer to be processed transferred to the first vacuum transfer chamber to the at least one cleaning chamber to clean the wafer to be processed at least once;

[0026] The first vacuum transfer chamber transfers the cleaned wafer to be processed to the cooling chamber for cooling;

[0027] The second vacuum transfer chamber transfers the cooled wafer to be processed to the PVD titanium chamber to deposit a titanium adhesion layer on the surface of the wafer to be processed;

[0028] The second vacuum transfer chamber transfers the wafer to be processed with the titanium adhesion layer deposited thereon to the ALD-like titanium nitride chamber to deposit a titanium nitride barrier layer on the surface of the titanium adhesion layer;

[0029] The second vacuum transfer chamber transfers the wafer to be processed on which the titanium nitride barrier layer is deposited to the in-situ plasma processing chamber, so as to perform in-situ plasma processing on the titanium nitride barrier layer.

[0030] Optionally, the plasma used in the in-situ plasma treatment step of the titanium nitride barrier layer includes hydrogen plasma or a mixture of hydrogen plasma and nitrogen plasma, and the purge gas of the in-situ plasma treatment chamber includes argon.

[0031] Furthermore, when the plasma used in the in-situ plasma treatment step of the titanium nitride barrier layer is hydrogen plasma, the parameters of the in-situ plasma treatment chamber stabilization phase in the in-situ plasma treatment step are: stabilization time is 5s to 20s, chamber pressure is 25mtorr, RF energy of the RF starting power supply is 0W, RF energy of the RF bias power supply is 0W, and hydrogen flow rate is 70sccm to 90sccm; the parameters of the in-situ plasma treatment chamber ignition phase in the in-situ plasma treatment step are: ignition time is 4s to 6s, chamber pressure is 2 5mtorr, the RF energy of the RF starting power supply is 340W~460W, the RF energy of the RF bias power supply is 765W~1035W, and the hydrogen flow rate is 70sccm~90sccm; in the in-situ plasma treatment step, the parameters of the plasma treatment stage of the in-situ plasma treatment chamber are: plasma sub-treatment time is 10s~35s, the chamber pressure is 2mtorr, the RF energy of the RF starting power supply is 340W~460W, the RF energy of the RF bias power supply is 765W~1035W, and the hydrogen flow rate is 25sccm~35sccm;

[0032] When the plasma used in the in-situ plasma treatment step of the titanium nitride barrier layer is a mixture of hydrogen plasma and nitrogen plasma, the parameters of the in-situ plasma treatment chamber stabilization phase in the in-situ plasma treatment step are: stabilization time is 5s to 20s, chamber pressure is 10mtorr, RF energy of the RF starting power supply is 0W, RF energy of the RF bias power supply is 0W, hydrogen flow rate is 70sccm to 90sccm, and nitrogen flow rate is 5sccm to 15sccm; the parameters of the in-situ plasma treatment chamber ignition phase in the in-situ plasma treatment step are: ignition time is 4s to 6s, chamber pressure is 10mtorr, RF energy of the RF starting power supply is 0W, The amount is 25W~35W or 127.5W~172.5W, the RF energy of the RF bias power supply is 765W~1035W, the hydrogen flow rate is 70sccm~90sccm, and the nitrogen flow rate is 5sccm~15sccm; in the in-situ plasma treatment step, the parameters of the plasma treatment stage of the in-situ plasma treatment chamber are: plasma sub-treatment time is 10s~35s, the chamber pressure is 2mtorr, the RF energy of the RF starting power supply is the same as the RF energy of the RF starting power supply in the starting stage, the RF energy of the RF bias power supply is 765W~1035W, the hydrogen flow rate is 25sccm~35sccm, and the nitrogen flow rate is 5sccm~15sccm.

[0033] As described above, the semiconductor thin film manufacturing machine and semiconductor thin film preparation method of the present invention integrate the cleaning chamber, cooling chamber, PVD titanium chamber and ALD-like titanium nitride chamber into the same machine, and integrate the adhesion layer and barrier layer of the CT structure into one machine, thereby greatly reducing the idle time between processes and effectively ensuring production capacity; in addition, the use of an ALD-like titanium nitride chamber to prepare the barrier layer of titanium nitride material can effectively ensure the step coverage uniformity of the barrier layer; finally, the titanium nitride barrier layer prepared by the ALD-like process is subjected to in-situ plasma treatment in an in-situ plasma treatment chamber, which can remove impurity elements in the titanium nitride barrier layer, such as carbon and hydrogen impurity elements, especially carbon impurity elements, thereby effectively improving the purity of the film layer, thereby improving the barrier capability of the titanium nitride barrier layer and effectively suppressing the "volcano effect". BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figures 1 to 3 It shows a schematic cross-sectional structure diagram of the deposition of adhesion layer, barrier layer and connecting metal wires after cleaning the substrate.

[0035] Figure 4 An SEM image showing the "volcano effect" generated during the process of filling grooves in a substrate in the prior art.

[0036] Figure 5Shown is a simplified structural diagram of the semiconductor thin film manufacturing machine of the present invention.

[0037] Figure 6 Display as Figure 4 Schematic diagram of the structure of the in-situ plasma processing chamber.

[0038] Figures 7 to 10 Shown are SEM images of the wafer to be processed after in-situ plasma treatment of the titanium nitride barrier layer film using four sets of different parameters and forming tungsten connecting metal wires using a CVD process.

[0039] Component number description

[0040] 10 base

[0041] 100 grooves

[0042] 11 Adhesion layer

[0043] 12 Barrier layer

[0044] 13 Connecting Metal Wires

[0045] 20 Semiconductor thin film manufacturing equipment

[0046] 21. First vacuum transfer chamber

[0047] 22. Second vacuum transfer chamber

[0048] 230 Plasma Physical Cleaning Chamber

[0049] 231 Chemical Cleaning Chamber

[0050] 232 Degassing cleaning chamber

[0051] 24 First cooling chamber

[0052] 25 Second cooling chamber

[0053] 26 PVD titanium chamber

[0054] 27 Type ALD titanium nitride chamber

[0055] 28 In-situ plasma processing chamber

[0056] 280 cavity

[0057] 281 cover

[0058] 282 Metal Shield

[0059] 283 Quartz Cover

[0060] 284 base

[0061] 285 RF bias power supply

[0062] 286 RF Starter Power Supply

[0063] 287 Inductor

[0064] 288 Pressure Control Pump

[0065] 289 intake pipe

[0066] 30 front-end interface module

[0067] 31 Load lock chamber

[0068] 32 Robotic Arm

[0069] 33 Sealed cavity

[0070] 34 accommodating cavity

[0071] 35 Impedance point automatic switching device

[0072] 36 wafers to be processed

[0073] 37 Gas Source DETAILED DESCRIPTION

[0074] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0075] See also Figures 1 to 10 It should be noted that the diagrams provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Therefore, the diagrams only show components related to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the type, quantity, and proportion of each component may be changed arbitrarily, and the component layout may also be more complex.

[0076] Example 1

[0077] As described in the background art, in the MEOL CT process of semiconductor manufacturing, Figure 1 and Figure 2 As shown, an adhesion layer 11 of titanium material and a barrier layer 12 of titanium nitride material are generally formed on the surface of the substrate 10 having the groove 100; Figure 3 As shown, tungsten material is then used to fill the groove 100 as the connecting metal wire 13. However, when the tungsten material is used to deposit the connecting metal wire 13 by CVD reaction, since the reaction gas contains fluorine, fluorine will react with titanium to generate titanium fluoride gas to form the following Figure 4 The "volcano effect" defect shown seriously affects the quality of the CT structure, and as the size of existing semiconductor devices continues to shrink, this problem becomes particularly prominent. Therefore, it is necessary to effectively improve the blocking ability of the barrier layer 12 of the titanium nitride material, and at the same time ensure the production capacity and the better step coverage uniformity of the barrier layer 12.

[0078] Based on this, Figure 5 As shown, this embodiment provides a semiconductor thin film manufacturing machine, the semiconductor thin film manufacturing machine 20 includes: a first vacuum transfer chamber 21, a second vacuum transfer chamber 22, at least one cleaning chamber, at least one cooling chamber, such as Figure 5 The first cooling chamber 24 and the second cooling chamber 25, the PVD titanium chamber 26, the ALD-like titanium nitride chamber 27, and the in-situ plasma treatment chamber 28; wherein,

[0079] The cleaning chamber is disposed on the periphery of the first vacuum transfer chamber 21; the PVD titanium chamber 26, the ALD-like titanium nitride chamber 27, and the in-situ plasma processing chamber 28 are disposed on the periphery of the second vacuum transfer chamber 22; and the cooling chambers (e.g., the first cooling chamber 24 and the second cooling chamber 25) are disposed between the first vacuum transfer chamber 21 and the second vacuum transfer chamber 22.

[0080] The first vacuum transfer chamber 21 and the second vacuum transfer chamber 22 are used to transfer the wafers to be processed to the desired chamber. It should be noted that the first vacuum transfer chamber 21 and the second vacuum transfer chamber 22 are generally provided with a robotic arm 32, which can transfer the wafers to be processed to the desired chamber.

[0081] The cleaning chamber is used to clean the wafer to be processed;

[0082] The cooling chambers (such as the first cooling chamber 24 and the second cooling chamber 25 ) are used to cool down the wafers to be processed;

[0083] The PVD titanium chamber 26 is used to deposit a titanium adhesion layer in a PVD process on the surface of the wafer to be processed;

[0084] The ALD-like titanium nitride chamber 27 is used for depositing a titanium nitride barrier layer on the surface of the wafer to be processed in an ALD-like process;

[0085] The in-situ plasma processing chamber 28 is used to perform in-situ plasma treatment on the wafer to be processed, on which a titanium nitride barrier layer is deposited after being processed in the ALD-like titanium nitride chamber.

[0086] It should be noted that the ALD-like titanium nitride chamber 27 is used to deposit a titanium nitride material layer using an ALD-like process. The precursor used in this ALD-like process is tetrakis(dimethylamino)titanium (TDMAT for short). TDMAT can decompose into titanium nitride material through thermal reaction. In each deposition step, the thermal decomposition temperature is controlled to be lower than the temperature required for thermal decomposition of TDMAT using the CVD process, and the time for TDMAT to be introduced is controlled. After multiple deposition steps and purge steps are repeated in a cycle, the titanium nitride material layer of the desired thickness is deposited. The ALD-like process greatly improves the film formation rate of the titanium nitride material layer deposited compared to the ALD process, and has sidewall coverage uniformity that cannot be matched by the CVD process.

[0087] The semiconductor thin film manufacturing machine of this embodiment integrates a cleaning chamber, a cooling chamber, a PVD titanium chamber, and an ALD-like titanium nitride chamber into the same machine, thereby integrating the adhesion layer and barrier layer of the CT structure into one machine, thereby greatly reducing the idle time between processes and effectively ensuring production capacity. In addition, the use of an ALD-like titanium nitride chamber to prepare the barrier layer of titanium nitride material can effectively ensure the step coverage uniformity of the barrier layer. Finally, the titanium nitride barrier layer prepared by the ALD-like process is subjected to in-situ plasma treatment in an in-situ plasma treatment chamber, which can remove impurity elements in the titanium nitride barrier layer, such as carbon and hydrogen impurities, especially carbon impurities, thereby effectively improving the purity of the film layer, thereby improving the barrier capability of the titanium nitride barrier layer and effectively suppressing the "volcano effect".

[0088] As an example, Figure 5 As shown, the cleaning chamber of the semiconductor thin film manufacturing machine generally includes three types of cleaning chambers: a plasma physical cleaning chamber 230, a chemical cleaning chamber 231, and a degassing cleaning chamber 232 (referred to as a degas chamber). First, the plasma physical cleaning chamber 230 uses plasma bombardment to pre-treat the wafer to be processed to remove oxides attached to the wafer to be processed; then the chemical cleaning chamber 231 uses the Siconi process to chemically etch and clean the wafer to be processed, so as to further clean the oxides after the plasma physical cleaning chamber 230 cleans them; finally, the degassing cleaning chamber 232 removes water vapor and impurities on the surface of the wafer to be processed by increasing the temperature, for example, to a temperature of about 200°C to 250°C. Preferably, in order to improve the utilization rate of other chambers, two degassing cleaning chambers 232, which consume more time, can be set.

[0089] like Figure 5 Therefore, as another preferred example, in order to improve the utilization rate of other chambers, two ALD-like titanium nitride chambers 27 that consume more time can also be set.

[0090] like Figure 5As shown, the semiconductor thin film manufacturing machine also includes a basic loading platform 29, a front-end interface module 30, and a load lock chamber 31. The front-end interface module 30 uses a robotic arm 32 to transfer wafers to be processed between the loading platform 29 and the load lock chamber 31. The number of load lock chambers 31 can be set according to actual needs. For example, in this embodiment, two load lock chambers 31 are provided.

[0091] like Figure 6 As shown, as a specific example, the in-situ plasma processing chamber 28 includes: a cavity 280, a cover 281, a base 284 accommodated in the cavity 280, an RF bias power supply 285, an RF starting power supply 286, an inductor 287, a pressure controlled pump 288 and a plurality of air inlet pipes 289; wherein,

[0092] The cover 281 is buckled over the cavity 280 to form a sealed cavity 33 between the two. The cover 281 has a cavity 34 inside, which can accommodate the wafer 36 to be processed. The inductor 287 is embedded in the cover 281 and connected to the external RF starting power supply 286. The base 284 is used to support the wafer 36 to be processed and can be raised and lowered in the vertical direction.

[0093] The pressure control pump 288 is in communication with the cavity 280 to control the vacuum level of the cavity 280 ;

[0094] The plurality of air inlet pipes 289 are in communication with the cavity 280 to introduce different types of required gases into the cavity 280;

[0095] The RF bias power supply 285 is disposed at the bottom of the base 284 to attract the charged particles in the sealed cavity 33 and move them toward the surface of the base 284 .

[0096] The working process of the in-situ plasma processing chamber 28 is as follows: the base 284 carries the wafer to be processed 36 and rises upward to the accommodating cavity 34 in the cover body 281 where the wafer to be processed 36 is located; the required gas source 37 enters the sealed cavity 33 through the air inlet pipe 289, the RF starting power supply 286 is turned on to ionize the gas entering the accommodating cavity 34 to form plasma, and at the same time, the RF bias power supply 285 is turned on to make the formed plasma move toward the base 284, so that the plasma can process the surface of the wafer to be processed 36.

[0097] like Figure 6As shown, the in-situ plasma processing chamber 28 further includes an externally mounted automatic impedance point switching device 35. The automatic impedance point switching device 35 is connected to the inductor 287 and the RF ignition power supply 286, respectively, to automatically adjust the impedance of the inductor 287 to achieve impedance matching between the RF ignition power supply 286 and the inductor 287, thereby igniting the gas in the sealed chamber 33. The inductor 287 is generally provided with an impedance adjustment button. By configuring the automatic impedance point switching device 35, the button on the inductor 287 can be automatically adjusted as needed to match the impedance of the inductor 287 with the RF ignition power supply 286, thereby igniting the gas. The automatic impedance point switching device 35 can be a conventional automatic control device.

[0098] like Figure 6 As shown, preferably, the cover body 281 is composed of a metal shielding cover 282 and a quartz cover 283; wherein, the metal shielding cover 282 has a cavity inside, and the cavity is adapted to the shape of the quartz cover 283, and the metal shielding cover 282 is adapted to cover the outside of the quartz cover 283. The quartz cover 283 serves as the inner cover and cooperates with the cavity 280 to form the sealed cavity 33. The inductor coil 287 is embedded in the metal shielding cover 282. Specifically, the inductor coil 287 is embedded in the metal shielding cover 282 through an insulating bracket. The metal shielding cover 282 can effectively prevent radio frequency leakage, ensure the personal safety of operators, and reduce the impact on the process.

[0099] As another example, the top contour of the accommodating cavity 34 inside the cover 281 can be set to an arc shape, that is, the side of the cover 281 facing the accommodating cavity 34 can be set to an arc shape. The arc shape is more conducive to the confinement of the plasma field formed by the ignition in the accommodating cavity 34, and is also conducive to the adhesion of by-products generated during the process and is not easy to fall off. Figure 6 As shown, when the cover body 281 is composed of the metal shielding cover 282 and the quartz cover 283, the outer contour of the metal shielding cover 282 is set to be a rectangular parallelepiped, and the quartz cover 283 is set to be an arc-shaped cover with the same inner and outer shapes.

[0100] As an example, the gases introduced into the in-situ plasma processing chamber 28 generally include at least hydrogen and argon, which enter through respective gas sources 37 and respective gas inlet lines 289. The hydrogen gas can be converted into hydrogen ions, which can react with carbon and hydrogen impurities in the titanium nitride to generate gases that are discharged, thereby improving the purity of the titanium nitride film. The argon gas is used to purge the interior of the chamber.

[0101] Example 2

[0102] This embodiment provides a method for preparing a semiconductor thin film. The method is implemented based on the semiconductor thin film manufacturing machine of the first embodiment. Figure 5 As shown, the preparation method comprises the following steps:

[0103] S1, providing the semiconductor thin film manufacturing machine 20 described in the first embodiment;

[0104] S2, transferring the wafer to be processed transferred to the first vacuum transfer chamber 21 to the cleaning chamber to clean the wafer to be processed;

[0105] S3, the first vacuum transfer chamber 21 transfers the cleaned wafer to be processed to the first cooling chamber 24 or the second cooling chamber 25 for cooling;

[0106] S4, the second vacuum transfer chamber 22 transfers the cooled wafer to be processed to the PVD titanium chamber 26 to deposit a titanium adhesion layer on the surface of the wafer to be processed;

[0107] S5, the second vacuum transfer chamber 22 transfers the wafer to be processed with the titanium adhesion layer deposited thereon to the ALD-like titanium nitride chamber 27 to deposit a titanium nitride barrier layer on the surface of the titanium adhesion layer;

[0108] S6 , the second vacuum transfer chamber 22 transfers the wafer to be processed with the titanium nitride barrier layer deposited thereon to the in-situ plasma processing chamber 28 , so as to perform in-situ plasma treatment on the titanium nitride barrier layer.

[0109] As an example, after step S6 , the second vacuum transfer chamber 22 also transfers the wafer to be processed after in-situ plasma treatment to the first cooling chamber 24 or the second cooling chamber 25 for cooling, and then transfers it out through the first vacuum transfer chamber 21 .

[0110] As an example, in step S6, the plasma used in the in-situ plasma treatment of the titanium nitride barrier layer includes hydrogen plasma. The hydrogen plasma can react with carbon and hydrogen impurities in the titanium nitride to generate gases that are discharged, thereby improving the purity of the titanium nitride film layer. The purge gas in the in-situ plasma treatment chamber includes argon. Preferably, the plasma used in the in-situ plasma treatment of the titanium nitride barrier layer also includes nitrogen plasma. The nitrogen plasma has a relatively large but not very large size, which can compact the titanium nitride film layer during the in-situ plasma treatment, making the film layer more dense, but not generating a large enough force to cause the film layer to rupture.

[0111] In order to further illustrate that the in-situ plasma treatment chamber described in the semiconductor film preparation method of this embodiment can effectively reduce the "volcano effect" after the titanium nitride barrier layer film is subjected to in-situ plasma treatment. Three groups of experiments in the following three tables were carried out for verification. When the titanium nitride barrier layer film is subjected to in-situ plasma treatment, the in-situ plasma treatment chamber will go through 6 stages: stabilization stage - ignition stage - plasma treatment stage - power-off stage - purge stage - exhaust stage. The plasma treatment gases used in the two groups of experiments in Table 1 and Table 2 are the same, both hydrogen and nitrogen, and the purge gas is argon. The parameters used in the two groups of experiments are basically the same, with the difference that the RF energy of the RF ignition power supply used in Table 1 is 25W~35W, and the RF energy of the RF ignition power supply used in Table 2 is 127.5W~172.5W. Under these parameters, the titanium nitride barrier layer film is subjected to in-situ plasma treatment and the tungsten connecting metal wire is formed by the CVD process, and the SEM image of the wafer to be processed is shown as follows. Figure 8 and Figure 9 As shown, Figure 8 Corresponding to the parameters in Table 1, Figure 9 Corresponding to the parameters in Table 2, in order to form a comparison of the effects, Figure 7 This is the SEM image of the wafer to be processed after the titanium nitride barrier film is not subjected to in-situ plasma treatment and the tungsten metal connecting metal wire is formed by CVD process. By comparison, it can be seen that Figure 8 The "volcano effect" phenomenon has been effectively improved. Figure 9 The significant beneficial effect of basically eliminating the "volcano effect" was achieved. The plasma treatment gas used in the experiment in Table 3 was hydrogen, and the purge gas was argon. Figure 10 The SEM image of the wafer to be processed after in-situ plasma treatment of the titanium nitride barrier film under the parameters and forming the tungsten connecting metal wire by CVD process is shown. Figure 7 By comparison, it can be seen that the "volcano effect" phenomenon has achieved the obvious beneficial effect of basically eliminating it.

[0112] Table 1 Parameters of in-situ plasma treatment in the in-situ plasma treatment chamber

[0113]

[0114] Table 2 Parameters of in-situ plasma treatment in the in-situ plasma treatment chamber

[0115]

[0116]

[0117] Table 3 Parameters of in-situ plasma treatment in the in-situ plasma treatment chamber

[0118]

[0119] In summary, the present invention provides a semiconductor thin film manufacturing machine and method for preparing semiconductor thin films. By integrating a cleaning chamber, a cooling chamber, a PVD titanium chamber, and an ALD-like titanium nitride chamber into the same machine, the adhesion layer and barrier layer of the CT structure are integrated into a single machine, significantly reducing downtime between processes and effectively ensuring production capacity. Furthermore, the use of an ALD-like titanium nitride chamber to prepare the titanium nitride barrier layer effectively ensures uniform step coverage of the barrier layer. Finally, an in-situ plasma treatment chamber is used to treat the titanium nitride barrier layer prepared using an ALD-like process. This removes impurities such as carbon and hydrogen, particularly carbon, from the titanium nitride barrier layer, effectively improving the purity of the film and thereby enhancing the barrier capability of the titanium nitride barrier layer and suppressing the "volcano effect." Therefore, the present invention effectively overcomes the shortcomings of the prior art and has high industrial value.

[0120] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A semiconductor thin film manufacturing machine, characterized in that: The semiconductor thin film manufacturing machine includes: a first vacuum transfer chamber, a second vacuum transfer chamber, at least one cleaning chamber, at least one cooling chamber, a PVD titanium chamber, an ALD-like titanium nitride chamber, and an in-situ plasma processing chamber; wherein, The cleaning chamber is disposed outside the first vacuum transfer chamber; the PVD titanium chamber, the ALD-like titanium nitride chamber, and the in-situ plasma processing chamber are disposed outside the second vacuum transfer chamber; and the at least one cooling chamber is disposed between the first vacuum transfer chamber and the second vacuum transfer chamber. The first vacuum transfer chamber and the second vacuum transfer chamber are used to transfer the wafer to be processed to the required chamber; The cleaning chamber is used to clean the wafer to be processed; The at least one cooling chamber is used to cool the wafer to be processed; The PVD titanium chamber is used to deposit a titanium adhesion layer in a PVD process on the surface of the wafer to be processed; The ALD-like titanium nitride chamber is used to deposit a titanium nitride barrier layer on the surface of the wafer to be processed in an ALD-like process; The in-situ plasma processing chamber is used to perform in-situ plasma treatment on a wafer to be processed having a titanium nitride barrier layer deposited on its surface after being processed in the ALD-like titanium nitride chamber.

2. The semiconductor thin film manufacturing machine according to claim 1, wherein: The in-situ plasma processing chamber includes: a cavity, a cover, a base accommodated in the cavity, a radio frequency bias power supply, a radio frequency starting power supply, an inductor coil, a pressure controlled pump and a plurality of air inlet pipes; wherein, The cover is buckled over the cavity to form a sealed cavity between the two, and the inner side of the cover has a receiving cavity, which can accommodate the wafer to be processed; the inductor coil is embedded in the interior of the cover and connected to an external RF starting power supply; the base is used to support the wafer to be processed and can be raised and lowered in the vertical direction; The pressure control pump is connected to the cavity to control the vacuum degree of the cavity; A plurality of the air inlet pipes are in communication with the cavity to introduce different types of required gases into the cavity; The radio frequency bias power supply is arranged at the bottom of the base to attract the charged particles in the sealed cavity and make them move toward the surface of the base.

3. The semiconductor thin film manufacturing machine according to claim 2, wherein: The in-situ plasma processing chamber also includes an impedance point automatic switching device arranged on the outside, and the impedance point automatic switching device is connected to the inductor coil and the RF ignition power supply respectively to automatically adjust the impedance of the inductor coil as required, so that the RF ignition power supply and the inductor coil impedance are matched to realize the ignition of the gas in the sealed cavity.

4. The semiconductor thin film manufacturing machine according to claim 2, wherein: The cover body includes a metal shielding cover and a quartz cover; the metal shielding cover has a cavity inside, and the cavity is adapted to the shape of the quartz cover; the metal shielding cover is adapted to cover the outside of the quartz cover.

5. The semiconductor thin film manufacturing machine according to claim 4, wherein: The outer contour of the metal shielding cover is a rectangular parallelepiped; the quartz cover is an arc-shaped cover with the same inner and outer shapes.

6. The semiconductor thin film manufacturing machine according to claim 4, wherein: The inductor coil is embedded in the metal shielding cover through an insulating bracket.

7. The semiconductor thin film manufacturing machine according to claim 2, wherein: The top contour of the accommodating cavity inside the cover body is arc-shaped.

8. A method for preparing a semiconductor thin film, characterized in that: The preparation method comprises the following steps: Providing a semiconductor thin film manufacturing machine according to any one of claims 1 to 7; transferring the wafer to be processed transferred to the first vacuum transfer chamber to the at least one cleaning chamber to clean the wafer to be processed at least once; The first vacuum transfer chamber transfers the cleaned wafer to be processed to the cooling chamber for cooling; The second vacuum transfer chamber transfers the cooled wafer to be processed to the PVD titanium chamber to deposit a titanium adhesion layer on the surface of the wafer to be processed; The second vacuum transfer chamber transfers the wafer to be processed with the titanium adhesion layer deposited thereon to the ALD-like titanium nitride chamber to deposit a titanium nitride barrier layer on the surface of the titanium adhesion layer; The second vacuum transfer chamber transfers the wafer to be processed on which the titanium nitride barrier layer is deposited to the in-situ plasma processing chamber, so as to perform in-situ plasma processing on the titanium nitride barrier layer.

9. The method for preparing a semiconductor thin film according to claim 8, wherein: The plasma used in the step of performing in-situ plasma treatment on the titanium nitride barrier layer includes hydrogen plasma or a mixture of hydrogen plasma and nitrogen plasma, and the purge gas of the in-situ plasma treatment chamber includes argon gas.

10. The method for preparing a semiconductor thin film according to claim 9, wherein: When the plasma used in the in-situ plasma treatment step of the titanium nitride barrier layer is hydrogen plasma, the parameters of the in-situ plasma treatment chamber stabilization phase in the in-situ plasma treatment step are: stabilization time is 5s to 20s, chamber pressure is 25mtorr, RF energy of the RF ignition power supply is 0W, RF energy of the RF bias power supply is 0W, and hydrogen flow rate is 70sccm to 90sccm; the parameters of the in-situ plasma treatment chamber ignition phase in the in-situ plasma treatment step are: ignition time is 4s to 6s, chamber pressure is 25mtorr, and hydrogen flow rate is 70sccm to 90sccm. orr, the RF energy of the RF starting power supply is 340W~460W, the RF energy of the RF bias power supply is 765W~1035W, and the hydrogen flow rate is 70sccm~90sccm; in the in-situ plasma treatment step, the parameters of the plasma treatment stage of the in-situ plasma treatment chamber are: plasma sub-treatment time is 10s~35s, the chamber pressure is 2mtorr, the RF energy of the RF starting power supply is 340W~460W, the RF energy of the RF bias power supply is 765W~1035W, and the hydrogen flow rate is 25sccm~35sccm; When the plasma used in the in-situ plasma treatment step of the titanium nitride barrier layer is a mixture of hydrogen plasma and nitrogen plasma, the parameters of the in-situ plasma treatment chamber stabilization phase in the in-situ plasma treatment step are: stabilization time is 5s to 20s, chamber pressure is 10mtorr, RF energy of the RF starting power supply is 0W, RF energy of the RF bias power supply is 0W, hydrogen flow rate is 70sccm to 90sccm, and nitrogen flow rate is 5sccm to 15sccm; the parameters of the in-situ plasma treatment chamber ignition phase in the in-situ plasma treatment step are: ignition time is 4s to 6s, chamber pressure is 10mtorr, RF energy of the RF starting power supply is 0W, The amount is 25W~35W or 127.5W~172.5W, the RF energy of the RF bias power supply is 765W~1035W, the hydrogen flow rate is 70sccm~90sccm, and the nitrogen flow rate is 5sccm~15sccm; in the in-situ plasma treatment step, the parameters of the plasma treatment stage of the in-situ plasma treatment chamber are: plasma sub-treatment time is 10s~35s, the chamber pressure is 2mtorr, the RF energy of the RF starting power supply is the same as the RF energy of the RF starting power supply in the starting stage, the RF energy of the RF bias power supply is 765W~1035W, the hydrogen flow rate is 25sccm~35sccm, and the nitrogen flow rate is 5sccm~15sccm.

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