Double-wafer processing cavity and control method thereof

Abstract

The invention discloses a double-wafer processing cavity and a control method thereof. The double-wafer processing cavity comprises a cavity assembly provided with a closed cavity; the supporting assembly is arranged in the cavity and comprises a supporting base, a lifting shaft and wafer supporting plates, and the wafer supporting plates are stacked on the supporting base in a layered mode and support the first wafer and the second wafer respectively; the upper lamp array assembly and the lower lamp array assembly are arranged corresponding to the first wafer and the second wafer in the axial direction and are installed on the outer side of the cavity; the temperature sensor is used for monitoring the temperature of the wafer; the lifting shaft drives the supporting assembly to ascend and descend through the transmission mechanism, and the distance between the wafer and the lamp array assembly is adjusted. Through the arrangement of the upper lamp array assembly, the lower lamp array assembly and the wafer supporting plates which are arranged in a layered mode, two wafers are synchronously heated in the same cavity, the wafer heating efficiency is improved, through the arrangement of the supporting assemblies which can be adjusted in a lifting mode, the temperature difference of the two wafers can be reduced, and the temperature uniformity of the two wafers is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a dual-wafer processing chamber and a control method thereof. Background Art

[0002] In the semiconductor manufacturing field, PVD (physical vapor deposition) and CVD (chemical vapor deposition) are two critical thin-film deposition technologies. In PVD equipment, the loadlock chamber, heated degassing chamber, and cooling chamber are essential components. The loadlock chamber is used to transition the equipment from atmospheric to vacuum, maintaining a high cleanliness and high vacuum environment within the process chamber to ensure smooth process execution. The heated degassing chamber heats and removes moisture and volatile impurities from the wafer surface, ensuring the quality of the film coating. The cooling chamber cools the coated wafers to ensure they remain within a reasonable temperature range before being transferred to the wafer boat. Existing technologies typically separate the loadlock chamber, heated degassing chamber, and cooling chamber. During use, wafers must be transferred to each chamber sequentially for processing. For example, after placing the wafer in the load-lock chamber, it is evacuated, changing the chamber pressure from atmospheric to vacuum. The wafer is then transferred to a heated degassing chamber for heating and degassing. After degassing, the wafer is transferred to the process chamber by a robot for the next thin film deposition process. After the process is completed, the wafer is transferred to a cooling chamber for cooling. After cooling, it is transferred to the load-lock chamber, where air is introduced to change the pressure from vacuum to atmospheric, and the wafer is transferred to the Foup (material box). Due to the large number of processing chambers required, the thin film deposition equipment is bulky, and the preheating and cooling chambers are independent, resulting in low chamber utilization, low equipment efficiency, and high production costs.

[0003] In the Chinese patent document with publication number CN113981416A, a multifunctional wafer pretreatment chamber is disclosed, which includes a chamber body, a wafer carrying device, a preheating device, a heat conducting device, a cooling device, a first drive device, a second drive device and a controller; the wafer carrying device includes a carrying plate and a plurality of support pins; the heat conducting device is located directly above the wafer, and the cooling device is located in the carrying plate; the controller is connected to the first drive device and the second drive device; when in the preheating mode, the support pins rise to support the wafer and the preheating device starts; when in the cooling mode, the support pins descend and the wafer is placed on the carrying plate.

[0004] In the above-mentioned patent documents, although the preheating device and the cooling device are integrated into one chamber, so that one chamber can be used for multiple purposes, the number of chambers used in the wafer processing equipment is reduced, and the problem of the large size of the equipment is alleviated to a certain extent, the existing thin film deposition equipment includes multiple chambers, and the processing of a wafer can only be completed after passing through multiple chambers, and the equipment production capacity is often limited by the time-consuming process. In actual production, the wafer preheating process is a bottleneck process, which affects the WPH (Wafers Per Hour) efficiency of the equipment. Since the chamber only supports the heating or cooling of one wafer at a time, the problem of low efficiency of the wafer preheating process is still not solved. Therefore, it is necessary to improve the wafer heating efficiency, that is, to reduce the time consumed in heating a single wafer, so as to improve the overall production capacity of the equipment. Summary of the Invention

[0005] The object of the present invention is to provide a dual-wafer processing chamber and a control method thereof, which can heat two wafers simultaneously in the same chamber, improve the wafer heating efficiency and reduce the temperature difference between the two wafers.

[0006] To solve the above technical problems, an embodiment of the present invention provides a technical solution as follows: a dual-wafer processing chamber, comprising: a chamber assembly, the chamber assembly having a sealed chamber; a support assembly, arranged in the chamber, comprising a support base, a lifting shaft and a wafer support plate; one end of the lifting shaft is connected to the support base, and the other end is connected to a transmission mechanism; the wafer support plates are stacked on the support base, respectively supporting a first wafer and a second wafer; an upper lamp array assembly and a lower lamp array assembly are installed on the outer sides of the axial ends of the chamber and are axially arranged corresponding to the first wafer and the second wafer, for heating the first wafer and the second wafer; a temperature monitoring unit comprises a first temperature sensor and a second temperature sensor fixed to the wafer support plate, the first temperature sensor being used to monitor the temperature of the first wafer, and the second temperature sensor being used to monitor the temperature of the second wafer; wherein the lifting shaft drives the support assembly to rise and fall through the transmission mechanism, and adjusts the distance between the first wafer and the second wafer and the upper lamp array assembly and the lower lamp array assembly to optimize the temperature uniformity of the first wafer and the second wafer.

[0007] Furthermore, the cavity assembly includes a cavity, a cavity cover installed on the top of the cavity, an upper mounting plate and a lower mounting plate installed on the cavity cover and the bottom of the cavity respectively, an upper light-transmitting plate and a lower light-transmitting plate connected to the upper mounting plate and the lower mounting plate respectively, and the cavity, cavity cover, upper mounting plate, upper light-transmitting plate, lower mounting plate, and lower light-transmitting plate form a closed cavity, and the upper lamp array assembly and the lower lamp array assembly are respectively installed on the outside of the upper mounting plate and the lower mounting plate.

[0008] Furthermore, the light radiated by the upper lamp array assembly and the lower lamp array assembly penetrates the upper light-transmitting plate and the lower light-transmitting plate respectively to heat the first wafer and the second wafer, and the light transmittance of the light-transmitting plate to the energy radiated by the lamp array is greater than 90%.

[0009] Furthermore, the upper light-transmitting plate and the lower light-transmitting plate are made of quartz, sapphire or transparent ceramic.

[0010] Furthermore, the upper lamp array assembly includes first lamp beads arranged toward the first wafer, and the lower lamp array assembly includes second lamp beads arranged toward the second wafer, and the first lamp beads and the second lamp beads are arranged in concentric circles or in a matrix array.

[0011] Furthermore, the lifting shaft is coaxially arranged with the support base, and the lifting shaft can drive the support assembly to rotate with the lifting shaft as the rotation axis through the transmission mechanism.

[0012] Furthermore, the dual-wafer processing chamber supports three operating modes: Dual wafer mode: heating the first wafer and the second wafer simultaneously; Single wafer mode: only the upper lamp array component or the lower lamp array component is turned on to heat a single wafer; Double-sided heating mode: the upper lamp array assembly and the lower lamp array assembly heat the same wafer simultaneously.

[0013] To solve the above technical problems, the present invention further provides a dual-wafer processing chamber control method for controlling the heating of the built-in wafers in the dual-wafer processing chamber, comprising the following steps: monitoring the temperatures of the first wafer and the second wafer in real time by using a temperature sensor; The temperature difference between the first wafer and the second wafer is calculated based on the feedback signal of the temperature sensor, and the lifting movement of the support component is controlled according to preset conditions to adjust the distance between the wafer and the lamp array component.

[0014] Furthermore, according to the wafer processing requirements, the temperature deviation allowable range of the first wafer and the second wafer is set to , the preset condition configuration is: when When, and When the temperature of the first wafer is higher than that of the second wafer, the support assembly moves downward by X mm, that is, the distance between the first wafer and the upper lamp array assembly increases by X mm, and the distance between the second wafer and the lower lamp array assembly decreases by X mm, and heating continues; when When, and When the temperature of the first wafer is lower than that of the second wafer, the wafer support assembly moves upward by X mm, that is, the distance between the first wafer and the upper lamp array assembly decreases by X mm, and the distance between the second wafer and the lower lamp array assembly increases by X mm, and heating continues, wherein 0<X≤3; when When , it indicates that the temperature difference between the first wafer and the second wafer is within the process tolerance range, the support assembly is not adjusted and heating continues; in, The temperature of the first wafer is The difference between The temperature of the second wafer is The difference, is the average value of the first wafer temperature and the second wafer temperature.

[0015] Furthermore, the lifting control interval period of the support assembly is t seconds, wherein 0<t≤10.

[0016] The dual-wafer processing chamber provided by the present invention, compared with the prior art, provides stable support for the loading of dual wafers by means of wafer support plates stacked in layers on a support base, and the upper and lower lamp array components are arranged axially corresponding to the first and second wafers, so that the dual wafers can be heated synchronously in the same chamber, effectively improving the heating efficiency of the wafers, and the distance between the wafers and the lamp array component is adjusted by driving the support component up and down through a lifting shaft, which can reduce the temperature difference between the two wafers and improve the temperature uniformity of the two wafers. The dual-wafer processing chamber control method provided by the present invention monitors the temperature of the first wafer and the second wafer through a built-in temperature sensor in the chamber, and based on the temperature difference between the first wafer and the second wafer, controls the lifting and lowering of the support component in real time, adjusts the distance between the wafer and the lamp array component, and can effectively improve the uniformity of the heating temperature of the two wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings. These exemplifications do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements. Unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0018] Figure 1 Schematic diagram of the cross-sectional structure of a dual-wafer processing chamber in an embodiment of the present invention; Figure 2 This is a schematic diagram of the support assembly structure in one embodiment of the present invention; Figure 3 This is a schematic structural diagram of a support assembly in another embodiment of the present invention; Figure 44 is a flow chart of the steps of the dual wafer processing chamber control method in an embodiment of the present invention.

[0019] Explanation of the accompanying drawings: 1. Cavity; 100. Chamber; 2. Cavity cover; 3. Upper mounting plate; 4. Upper light-transmitting plate; 5. Upper lamp array assembly; 51. First lamp bead; 6. Lower lamp array assembly; 61. Second lamp bead; 7. Lower mounting plate; 8. Lower light-transmitting plate; 9. First wafer; 10, 16. First wafer supporting plate; 11, 13, 17, 19. Wafer support; 12, 18. Second wafer supporting plate; 14, 14', supporting base; 15. Second wafer; 20, 20', lifting axis; 21. First cover plate; 22. First temperature sensor; 23. Second cover plate; 24. Second temperature sensor. DETAILED DESCRIPTION

[0020] To make the objectives, technical solutions, and advantages of the present invention more apparent, various embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in various embodiments of the present invention to facilitate a better understanding of the present application. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the claims of this application can be implemented.

[0021] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back, etc.), such directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0022] like Figure 1-3 As shown, one embodiment of the present invention relates to a dual-wafer processing chamber, comprising: a chamber assembly, including a chamber 1, a vacuum pump connected to the bottom, a chamber cover 2 mounted on the top of the chamber 1, an upper mounting plate 3 and a lower mounting plate 7 mounted on the chamber cover 2 and the bottom of the chamber 1, respectively. The upper mounting plate 3 is correspondingly mounted on the upper light-transmitting plate 4, and the lower mounting plate 7 is correspondingly mounted on the lower light-transmitting plate 8. The chamber 1, the chamber cover 2, the upper mounting plate 3, the upper light-transmitting plate 4, the lower mounting plate 7, and the lower light-transmitting plate 8 form a closed chamber 100. To enhance the sealing effect of the chamber 100, O-rings are used to form a sealed connection between the chamber 1 and the chamber cover 2, the chamber cover 2 and the upper mounting plate 3, the upper mounting plate 3 and the upper light-transmitting plate 4, the chamber 1 and the lower mounting plate 7, and the lower mounting plate 7 and the lower light-transmitting plate 8. A vacuum pump (not shown) is connected to the bottom of the chamber 1 to evacuate the chamber 100, so that the vacuum level of the chamber 100 meets the process requirements of wafer processing.

[0023] The support assembly, located within chamber 100, includes support bases 14, 14', lifting shafts 20, 20', and wafer support plates. One end of the lifting shafts 20, 20' is connected to the support bases 14, 14', and the other end is connected to a transmission mechanism (not shown). The lifting shafts 20 are connected and sealed to chamber 1 via bellows. The wafer support plates are stacked on the support bases 14, 14', supporting the first wafer 9 and the second wafer 15, respectively. To increase wafer placement stability, each wafer is supported by multiple wafer support plates, with the contact surfaces of the wafer support plates coplanar with the wafer. In one example, the first wafer 9 is supported by first wafer support plates 10 and 16, and the second wafer 15 is supported by second wafer support plates 12 and 18. The first wafer 9 and the second wafer 15 are arranged parallel and spaced apart. The first wafer support plates 10 and 12 are fixed to one side of the support base via wafer supports 11 and 13, while the first wafer support plates 16 and the second wafer support plates 18 are fixed to the other side of the support base 14 and 14' via wafer supports 17 and 19. The contact surfaces of the first wafer support plates 10 and 16 with the first wafer are in the same plane, and the contact surfaces of the second wafer support plates 12 and 18 with the second wafer are in the same plane. In one example, the first wafer support plates 10, 12 and the second wafer support plates 16, 18 are made of stainless steel or aluminum alloy. Preferably, the first wafer support plates 10, 12 and the second wafer support plates 16, 18 are made of glass, sapphire, transparent ceramic, etc. to reduce their obstruction of radiation from the lamp array assembly and improve wafer heating efficiency and temperature uniformity. The first wafer 9 and the second wafer 15 can also be supported and positioned by three, four, or other wafer support plates evenly distributed around them.

[0024] The upper lamp array assembly 5 and the lower lamp array assembly 6 are installed on the outer sides of the axial ends of the chamber 100. The upper lamp array assembly 5 is installed on the outer side of the upper mounting plate 3, and the lower lamp array assembly 6 is installed on the outer side of the lower mounting plate 7. They are arranged axially corresponding to the first wafer 9 and the second wafer 15, and are used for heating the first wafer 9 and the second wafer 15.

[0025] Among them, the lifting shafts 20, 20' drive the support assembly to rise and fall through the transmission mechanism, adjust the distance between the wafer and the lamp array assembly to optimize the temperature uniformity of the wafer, that is, adjust the distance between the first wafer 9 and the second wafer 15 and the upper lamp array assembly 5 and the lower lamp array assembly 6 to optimize the temperature uniformity of the first wafer 9 and the second wafer 15. For example, when the temperature of the first wafer 9 is higher than that of the second wafer 15, the support assembly can be lowered so that the first wafer 9 is away from the upper lamp array assembly 5 and the second wafer 15 is close to the lower lamp array assembly 6, so that the energy of radiation received by the second wafer 15 is higher than that of the first wafer 9, thereby increasing the heating rate of the second wafer 15 and reducing the heating rate of the first wafer 9, so that the temperatures of the first wafer 9 and the second wafer 15 are close, and the temperature uniformity between the two is improved. Through the setting of the lifting shafts 20, 20', during the wafer radiation heating process, the lifting movement can be performed according to the temperature feedback of the upper and lower wafers to adjust the temperature difference between the two wafers in real time, thereby improving the temperature uniformity of the two wafers.

[0026] The temperature monitoring unit includes a first temperature sensor 22 fixed to the first wafer support plate 10, 16 and a second temperature sensor 24 fixed to the second wafer support plate 12, 18. The first temperature sensor 22 is used to monitor the temperature of the first wafer 9, and the second temperature sensor 24 is used to monitor the temperature of the second wafer 15. In order to improve the accuracy of the temperature sensor's feedback on wafer temperature, the end of the first temperature sensor 22 is set as close to the first wafer 9 as possible and is fixed to the first wafer support plates 10, 16 through the first cover plate 21. The end of the second temperature sensor 24 is set as close to the second wafer 15 as possible and is fixed to the second wafer support plates 12, 18 through the second cover plate 23 to improve the accuracy of the temperature signal feedback of the temperature sensor. Preferably, the distance between the temperature measuring point at the end of the first temperature sensor 22 and the edge of the first wafer 9 is 3-6mm, and the distance between the temperature measuring point at the end of the second temperature sensor 24 and the edge of the second wafer 15 is 3-6mm; the signal line of the temperature sensor is connected to the external PLC through the through hole in the middle of the lifting shaft 20, 20', and the temperature signal is fed back to the external control device (not shown in the drawings) for transmission of wafer temperature signals and control of wafer temperature. Preferably, in order to further improve the stability and safety of temperature monitoring, multiple temperature sensors can also be added, such as a first temperature sensor 22 is set at each end of the first wafer support plate 10, 16, that is, the first wafer 9 uses four temperature sensors for control and feedback. Similarly, a second temperature sensor 24 is set at each end of the first wafer support plate 12, 18, that is, the second wafer 15 uses four temperature sensors for control and feedback.

[0027] The functional interface includes a wafer loading port (not shown in the figure) and a wafer transfer port (not shown in the figure) respectively arranged on both sides of the cavity 1. The wafer loading port is used to connect with the EFEM (Equipment Front End Module) to receive the wafers sent by the EFEM robot; the wafer transfer port is used to connect with the TM (Transfer Module) to facilitate the transfer of wafers between multiple chambers inside the equipment.

[0028] In one embodiment, a dual-wafer processing chamber is provided. A gas inlet device (not shown) is connected to the chamber body. This provides the chamber with not only heating and degassing functions, but also load lock functionality and wafer cooling using gas. Furthermore, during radiant heating using the lamp array, a small amount of inert gas, such as N2 or Ar, can be injected into chamber 100 through the gas inlet device to enhance the wafer heating and degassing effects.

[0029] In one embodiment, a dual-wafer processing chamber is provided, wherein an upper lamp array assembly 5 is mounted above a chamber 1, and a lower lamp array assembly 6 is mounted below the chamber 1. The lamp array assembly radiates light through a light-transmitting plate onto the surface of a wafer within a chamber 100, thereby heating the wafer. The light-transmitting plate has a transmittance of greater than 90% for the light radiated by the lamp array assembly. Specifically, the light radiated by the upper lamp array assembly 5 penetrates the upper light-transmitting plate 4 to heat a first wafer 9, while the light radiated by the lower lamp array assembly 6 penetrates the lower light-transmitting plate 8 to heat a second wafer 15. Thus, by synchronizing the upper and lower lamp array assemblies 5 and 6 to radiate and heat the first and second wafers 9 and 15, simultaneous heating of two wafers within the same chamber 100 is achieved. Compared to the prior art in which the same chamber can only process a single wafer, the dual-wafer processing chamber provided by the present invention can simultaneously heat two wafers within the same timeframe, effectively improving the efficiency of wafer pre-processing heating and thereby improving the WPH (Wafers Per Hour) efficiency of semiconductor processing equipment. The upper lamp array assembly 5 includes a first lamp bead 51 arranged toward the first wafer 9, and the lower lamp array assembly 6 includes a second lamp bead 61 arranged toward the second wafer 15. Preferably, the first lamp bead 51 and the second lamp bead 61 are arranged in concentric circles or in a matrix array to enhance the uniformity of the radiation heating of the lamp array assembly.

[0030] In one exemplary embodiment, the upper mounting plate 3 and the lower mounting plate 7 have identical structural designs, and the upper light-transmitting plate 4 and the lower light-transmitting plate 8 have identical structural designs to enhance versatility. The upper light-transmitting plate 4 and the lower light-transmitting plate 8 have a transmittance greater than 90% for the lamp array radiation band. The upper light-transmitting plate 4 and the lower light-transmitting plate 8 are preferably made of a translucent material such as quartz, sapphire, or transparent ceramic. The structure and radiation energy of the upper lamp array assembly 5 and the lower lamp array assembly 6 can be identical to enhance versatility, or they can be different to match the installation space in the upper and lower portions of the cavity 1, without limitation.

[0031] In one embodiment, a dual wafer processing chamber is provided, including a chamber assembly and a support assembly disposed in a chamber 100 of the chamber assembly, such as Figure 3 As shown, the support assembly includes a coaxially arranged support base 14' and a lifting shaft 20', and wafer support plates are stacked on the support base 14' to support the first wafer 9 and the second wafer 15 respectively. The contact surface of the wafer support plate and the same wafer is located in the same plane. Preferably, the first wafer 9 and the second wafer 15 are arranged in parallel and spaced apart. The lifting shaft 20' passes through one end of the bottom of the cavity 1 and is connected to the transmission mechanism. The lifting shaft 20' can not only drive the support assembly to rise and fall through the transmission mechanism, but also drive the support assembly to rotate with the lifting shaft 20' as the rotation axis, thereby driving the wafer loaded on the wafer support plate to rotate, further improving the uniformity of the heating temperature of the two wafers. The support base 14' and the lifting shaft 20' are made of stainless steel or aluminum alloy. Preferably, the support base 14' and the lifting shaft 20' are made of highly light-transmitting materials such as quartz, sapphire glass, transparent ceramics, etc., to avoid the radiation energy being blocked and affecting the heating of the wafer, thereby improving the temperature uniformity; the wafer support plate is made of quartz glass. In the prior art, when the wafer support plate adopts a metal structure, there are two problems. One is that the thermal conductivity of the metal is relatively large. For example, the thermal conductivity of stainless steel is 18W / (m·K), which will cause the heat in the contact area between the edge of the wafer and the wafer support plate to be quickly conducted away by the metal support plate, causing the temperature of the wafer near the contact area to drop, resulting in poor wafer temperature uniformity. By adopting quartz glass as the material for the wafer support plate, the thermal conductivity of the wafer support plate can be greatly reduced, and at the same time, the transmittance of the wafer support plate can be improved, which is beneficial to improving the uniformity of the wafer temperature.

[0032] The dual-wafer processing chamber provided by the present invention can provide three operating modes when used according to actual conditions: Dual wafer mode: The wafer support plate is loaded with the first wafer 9 and the second wafer 15 at the same time. The upper lamp array assembly 5, the first wafer 9, the second wafer 15, and the lower lamp array assembly 6 are coaxially arranged. The upper lamp array assembly 5 and the lower lamp array assembly 6 are turned on at the same time to heat the first wafer 9 and the second wafer 15 synchronously. In this working mode, the upper lamp array assembly 5 is the main heating source for the first wafer 9, and the lower lamp array assembly 6 is the main heating source for the second wafer 15. Single wafer mode: The wafer holder in the chamber 100 is loaded with only one wafer. When the first wafer 9 is loaded, the corresponding upper lamp array assembly 5 is turned on to heat it. When the second wafer 15 is loaded, the lower lamp array assembly 6 is turned on to heat it. Only the upper lamp array assembly 5 or the lower lamp array assembly 6 is turned on to heat a single wafer to save energy. Double-sided heating mode: In order to improve the efficiency of heating a single wafer, when the wafer holder in the chamber 100 is loaded with only one wafer, the upper lamp array assembly 5 and the lower lamp array assembly 6 are turned on at the same time to heat the same wafer, so as to increase the wafer heating rate and improve the efficiency of wafer heating.

[0033] In order to solve the technical problem raised by the present invention, realize simultaneous heating treatment of two wafers in the same chamber 1, improve wafer heating efficiency and reduce the temperature difference between the two wafers, an embodiment provided by the present invention relates to a dual-wafer processing chamber control method, which is used for the dual-wafer processing chamber to control the heating of two wafers therein, comprising the following steps: The temperature of the first wafer 9 and the second wafer 15 is monitored in real time by a temperature sensor built into the chamber 100; The temperature sensor feeds back the temperature signals of the first wafer 9 and the second wafer 15 to the control device. The control device calculates the temperature difference between the first wafer 9 and the second wafer 15 based on the feedback signal of the temperature sensor. According to the temperature difference between the first wafer 9 and the second wafer 15, the control device controls the lifting and lowering movement of the support assembly according to preset conditions and adjusts the distance between the wafer and the lamp array assembly.

[0034] According to the wafer processing requirements, the temperature deviation allowable range of the first wafer 9 and the second wafer 15 is set to , the preset conditions for the control device to control the movement of the support assembly are as follows: when When, and When the temperature of the first wafer 9 is higher than that of the second wafer 15, the support assembly moves downward by X mm, that is, the distance between the first wafer 9 and the upper lamp array assembly 5 increases by X mm, and the distance between the second wafer 15 and the lower lamp array assembly 6 decreases by X mm, and heating continues; when When, and When the temperature of the first wafer 9 is lower than that of the second wafer 15, the support assembly moves upward by X mm, that is, the distance between the first wafer 9 and the upper lamp array assembly 5 decreases by X mm, and the distance between the second wafer 15 and the lower lamp array assembly 6 increases by X mm, and heating continues; preferably, 0<X≤3; when When , it indicates that the temperature difference between the first wafer 9 and the second wafer 15 is within the process tolerance range, the support assembly is not adjusted and heating continues; in, The temperature of the first wafer is The difference between The temperature of the second wafer is The difference, is the average value of the first wafer temperature and the second wafer temperature.

[0035] The lifting and lowering control interval period of the support component is t seconds, 0<t≤10, that is, during the wafer heating process, the control device judges the preset conditions every t seconds, and controls the movement of the support component based on the judgment result, and adjusts the distance between the wafer and the lamp array component to improve the uniformity of the heating temperature between the two wafers.

[0036] In one embodiment, a dual-wafer processing chamber control method is provided. Since the temperature sensor is spaced apart from the wafer and does not directly contact the wafer, the wafer temperature value measured by the temperature sensor has a certain error compared to the actual wafer temperature. Therefore, the temperature sensor measurement data needs to be calibrated. The temperature sensor calibration process is as follows: Step 1: Place two wafers in the chamber and place temperature detectors on each wafer. The temperature measured by the temperature detector is equivalent to the actual wafer temperature. With a temperature gradient of 10°C, record the temperature data of the temperature sensor and the temperature detector, as shown in Table 1, the temperature calibration data record table, and find the functional relationship between the temperature sensor and the actual wafer temperature.

[0037] Table 1 Temperature calibration data record table

[0038] Based on the above table data, the functional relationship is calculated as follows: The relationship between the temperature of the first temperature sensor and the temperature of the first wafer, that is, the calibration function of the first temperature sensor is: A=f(TA); The relationship between the temperature of the second temperature sensor and the temperature of the second wafer, that is, the calibration function of the second temperature sensor is: B=g(TB).

[0039] Step 2: Heat the wafer and collect the temperature of the temperature sensor with a time gradient of 1s, as shown in Table 2, the temperature sensor time-sharing data recording table.

[0040] Table 2 Temperature sensor time-sharing data record table

[0041] The temperature sensor time-sharing data is calibrated according to the temperature sensor calibration function, and the data after calibration is recorded as shown in Table 3 Temperature Calibration Data Record Table.

[0042] Table 3 Temperature calibration data record table

[0043] During the wafer heating process, the average temperature of the first wafer 9 and the second wafer 15 at any time t is:

[0044] At any time t, the difference between the temperature of the first wafer 9 and the average temperature is:

[0045] At any time t, the difference between the temperature of the second wafer 15 and the average temperature is:

[0046] During the wafer heating process, the measurement data of the first temperature sensor 22 and the second temperature sensor 24 are calibrated to obtain the temperature of the first wafer 9 and the second wafer 15 at any time t, and the movement of the support assembly is judged based on the temperature difference between the first wafer 9 and the second wafer 15, and the lifting and lowering of the support assembly is controlled according to the preset conditions.

[0047] In one exemplary embodiment, the pre-condition is performed as follows: when When, and When the temperature of the first wafer 9 is higher than that of the second wafer 15, the support assembly moves downward by 1 mm, that is, the distance between the first wafer 9 and the upper lamp array assembly 5 increases by 1 mm, and the distance between the second wafer 15 and the lower lamp array assembly 6 decreases by 1 mm, and heating continues; when When, and When the temperature of the first wafer 9 is lower than that of the second wafer 15, the wafer support assembly moves upward by 1 mm, that is, the distance between the first wafer 9 and the upper lamp array assembly 5 decreases by 1 mm, and the distance between the second wafer 15 and the lower lamp array assembly 6 increases by 1 mm, and heating continues; when When , it indicates that the temperature difference between the first wafer 9 and the second wafer 15 is within the process tolerance range, the support assembly is not adjusted and heating continues; in, For any heating time t, the temperature of the first wafer 9 is The difference between The temperature of the second wafer 15 at any heating time t is The difference, is the average value of the temperature of the first wafer 9 and the temperature of the second wafer 15 at any heating time t.

[0048] In one embodiment, a dual-wafer processing chamber control method is provided, in which the movement of a support assembly is judged every 1-10 seconds, and the lifting and lowering of the support assembly are controlled according to preset conditions until the average temperature of the wafers reaches the temperature required by the process and the temperature deviation of the two wafers is within the allowable deviation range of the process.

[0049] A dual-wafer processing chamber provided in an embodiment of the present invention provides stable support for dual wafer loading through wafer support plates stacked in layers on a support base. The upper and lower lamp array components are arranged axially corresponding to the first and second wafers, so that the dual wafers can be heated synchronously in the same chamber, effectively improving the heating efficiency of the wafers. The lifting shaft drives the support component to rise and fall, and the distance between the wafer and the lamp array component is adjusted, which can reduce the temperature difference between the two wafers and improve the temperature uniformity of the two wafers. A dual-wafer processing chamber control method provided by the present invention monitors the temperature of the first wafer and the second wafer through a built-in temperature sensor in the chamber. Based on the temperature difference between the first wafer and the second wafer, the support component is lifted and lowered in real time to adjust the distance between the wafer and the lamp array component, which can effectively improve the uniformity of the heating temperature of the two wafers.

[0050] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the claims.

Claims

1. A dual wafer processing chamber, characterized in that: include: A cavity assembly, wherein the cavity assembly is provided with a sealed chamber (100); A support assembly is arranged in the chamber (100), comprising a support base (14, 14'), a lifting shaft (20, 20') and a wafer support plate; one end of the lifting shaft (20, 20') is connected to the support base (14, 14'), and the other end is connected to a transmission mechanism; the wafer support plates are stacked on the support base (14, 14') in layers, respectively supporting a first wafer (9) and a second wafer (15); An upper lamp array assembly (5) and a lower lamp array assembly (6) are mounted on the outer sides of the axial ends of the chamber (100) and are arranged axially corresponding to the first wafer (9) and the second wafer (15), and are used for heating the first wafer (9) and the second wafer (15); A temperature monitoring unit, comprising a first temperature sensor (22) and a second temperature sensor (24) fixed to the wafer support plate, wherein the first temperature sensor (22) is used to monitor the temperature of the first wafer (9), and the second temperature sensor (24) is used to monitor the temperature of the second wafer (15); The lifting shaft (20, 20') drives the support assembly to rise and fall through the transmission mechanism, and adjusts the spacing between the first wafer (9), the second wafer (15), the upper lamp array assembly (5), and the lower lamp array assembly (6) to optimize the temperature uniformity of the first wafer (9) and the second wafer (15).

2. The dual wafer processing chamber according to claim 1, wherein: The cavity assembly comprises a cavity (1), a cavity cover (2) installed on the top of the cavity (1), an upper mounting plate (3) and a lower mounting plate (7) installed on the bottom of the cavity cover (2) and the cavity (1), respectively, an upper light-transmitting plate (4) and a lower light-transmitting plate (8) connected to the upper mounting plate (3) and the lower mounting plate (7), respectively; the cavity (1), the cavity cover (2), the upper mounting plate (3), the upper light-transmitting plate (4), the lower mounting plate (7), and the lower light-transmitting plate (8) form a closed chamber (100); the upper lamp array assembly (5) and the lower lamp array assembly (6) are installed on the outer sides of the upper mounting plate (3) and the lower mounting plate (7), respectively.

3. The dual wafer processing chamber according to claim 2, wherein: The upper lamp array assembly (5) and the lower lamp array assembly (6) radiate light that penetrates the upper light-transmitting plate (4) and the lower light-transmitting plate (8) respectively to heat the first wafer (9) and the second wafer (15), and the light transmittance of the light-transmitting plate to the energy radiated by the lamp array is greater than 90%.

4. The dual wafer processing chamber according to claim 3, wherein: The upper light-transmitting plate (4) and the lower light-transmitting plate (8) are made of quartz, sapphire or transparent ceramic.

5. The dual wafer processing chamber according to claim 3, wherein: The upper lamp array assembly (5) includes a first lamp bead (51) arranged toward the first wafer (9), and the lower lamp array assembly (6) includes a second lamp bead (61) arranged toward the second wafer (15), wherein the first lamp bead (51) and the second lamp bead (61) are arranged in concentric circles or in a matrix array.

6. The dual wafer processing chamber according to claim 1, wherein: The lifting shaft (20') is coaxially arranged with the support base (14'), and the lifting shaft (20') can drive the support assembly to rotate with the lifting shaft (20') as the rotation axis through the transmission mechanism.

7. The dual wafer processing chamber according to claim 1, wherein: The dual-wafer processing chamber supports three operating modes: Dual wafer mode: heating the first wafer (9) and the second wafer (15) simultaneously; Single wafer mode: only the upper lamp array component (5) or the lower lamp array component (6) is turned on to heat a single wafer; Double-sided heating mode: the upper lamp array component (5) and the lower lamp array component (6) heat the same wafer simultaneously.

8. A dual wafer processing chamber control method, characterized in that: The heating control of the built-in wafer in the dual wafer processing chamber according to any one of claims 1 to 7 comprises the following steps: monitoring the temperatures of the first wafer (9) and the second wafer (15) in real time through a temperature sensor; The temperature difference between the first wafer (9) and the second wafer (15) is calculated based on the feedback signal of the temperature sensor, and the lifting movement of the support component is controlled according to preset conditions to adjust the distance between the wafer and the lamp array component.

9. The dual wafer processing chamber control method according to claim 8, wherein: According to the wafer processing process requirements, the temperature deviation allowable range of the first wafer (9) and the second wafer (15) is set to , the preset condition configuration is: when When, and When the temperature of the first wafer (9) is higher than the temperature of the second wafer (15), the support assembly moves downward by X millimeters, that is, the distance between the first wafer (9) and the upper lamp array assembly (5) increases by X millimeters, and the distance between the second wafer (9) and the lower lamp array assembly (6) decreases by X millimeters, and heating continues; when When, and When the temperature of the first wafer is lower than the temperature of the second wafer (9), the support assembly moves upward by X millimeters, that is, the distance between the first wafer (9) and the upper lamp array assembly (5) decreases by X millimeters, and the distance between the second wafer (15) and the lower lamp array assembly (6) increases by X millimeters, and heating continues; when When , it indicates that the temperature difference between the first wafer (9) and the second wafer (15) is within the process tolerance range, the support assembly is not adjusted and continues to heat, wherein 0<X≤3; in, is the temperature of the first wafer (9) and The difference between is the temperature of the second wafer (15) and The difference, is the average value of the temperature of the first wafer (9) and the temperature of the second wafer (15).

10. The dual wafer processing chamber control method according to claim 9, wherein: The lifting control interval period of the support assembly is t seconds, wherein 0<t≤10.

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