Air inlet disc structure and semiconductor equipment

Abstract

The invention discloses an air inlet disc structure and semiconductor equipment. The air inlet disc structure comprises an air inlet disc main body, an air inlet unit, an air supply unit and an air uniformizing unit, the air inlet unit comprises at least two mutually independent air inlet channels, the air supply unit comprises at least two circles of independent air supply channels, the number of the air uniformizing units is at least two, and the air inlet channels, the air supply channels and the air uniformizing units are in one-to-one correspondence; each gas uniformizing unit comprises a plurality of hole channels distributed in the circumferential direction, the hole diameter of each hole channel is gradually increased in the first direction, and the first direction is the direction from the position close to an inlet of the corresponding gas inlet channel to the position away from the inlet of the corresponding gas inlet channel. According to the invention, the gas inlet unit is provided with at least two independent gas inlet channels which are respectively and uniquely communicated with at least two circles of independent gas supply channels in the gas supply unit, so that gas types and flows in different circumferential areas of the wafer can be independently controlled and adjusted; the problem that in the background technology, a single channel cannot independently regulate and control gas distribution of a secondary outer ring is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an air intake disk structure and semiconductor equipment. Background Art

[0002] In semiconductor thin film deposition equipment, film uniformity directly affects device performance and process stability. The existing gas inlet disk device only has a single gas inlet channel on the side. This channel can only regulate the gas distribution in the outermost area of ​​the wafer, and cannot independently adjust the gas distribution in the sub-outer area, resulting in limited freedom of process control from the edge of the wafer to the sub-edge area. At the same time, due to the lack of a uniform gas structure, the gas is unevenly distributed circumferentially when it enters the cavity directly from the gas inlet. The gas concentration is too high near the gas inlet and insufficient in the area far away, resulting in a decrease in the circumferential uniformity of the film deposition. Especially for advanced processes that require the single deposition of multiple layers of thin films, the existing device cannot achieve precise adjustment of local film performance by independently controlling the gas parameters of the outer and sub-outer rings, which becomes a technical bottleneck for improving deposition uniformity. Summary of the Invention

[0003] Embodiments of the present invention provide an air intake disk structure and a semiconductor device, which solve the technical problem of uneven circumferential distribution of gas when gas directly enters a cavity from an air inlet in a conventional air intake disk structure.

[0004] To solve the above problems, according to one aspect of the present application, an embodiment of the present invention provides an air intake disk structure, comprising an air intake disk body, an air intake unit, an air supply unit, and an air uniforming unit, wherein the air intake unit is disposed on a side of the air intake disk body, the air supply unit is disposed within the air intake disk body and communicates with the air intake unit, and the air uniforming unit is disposed within the air supply unit;

[0005] The air intake unit includes at least two independent air intake channels, the air supply unit includes at least two circles of independent air supply channels, the air uniforming unit has at least two groups, and the air intake channels, the air supply channels and the air uniforming units correspond to each other one by one; wherein, the air uniforming unit includes a plurality of channels distributed along the circumferential direction, and the aperture of each of the channels gradually increases along a first direction, and the first direction is from close to the corresponding air intake channel entrance to away from the corresponding air intake channel entrance.

[0006] In some embodiments, the gas uniformity unit includes a primary gas uniformity section and a secondary gas uniformity section, the primary gas uniformity section includes a plurality of channels with gradually changing apertures, the secondary gas uniformity section includes two branch channels, and the output end of each channel is divided into two branch channels; and the flow resistance gradually decreases when the gas flows through the channel to the branch channel.

[0007] In some embodiments, the pore size of the branch channel is larger than the pore size of the corresponding channel.

[0008] In some embodiments, the gas injection direction of the branch channel forms an angle of 30°-45° with the horizontal plane of the air inlet disk body.

[0009] In some embodiments, the air intake unit includes a first air intake channel and a second air intake channel, and the air supply unit includes an outer ring air supply channel and a sub-outer ring air supply channel; the first air intake channel is connected to the outer ring air supply channel, and the second air intake channel is connected to the sub-outer ring air supply channel.

[0010] In some embodiments, the gas outlet of the outer ring gas supply channel covers the edge area of ​​the wafer, and the gas outlet of the secondary outer ring gas supply channel covers the secondary edge area of ​​the wafer; wherein, the edge area corresponds to an area with a radius between R1-R2, and the secondary edge area corresponds to an area with a radius between R3-R4, 120mm≤R1≤125mm, 145mm≤R2≤150mm, 60mm≤R3≤65mm, 85mm≤R4≤90mm.

[0011] In some embodiments, the outer ring gas supply channel and the sub-outer ring gas supply channel are independent of each other, so as to respectively introduce gas media with independently controlled flow or composition.

[0012] In some embodiments, the apertures of the channels increase linearly along the first direction, and the increase coefficient of the apertures of adjacent channels is 0.05-0.2 mm.

[0013] In some embodiments, the holes of the air homogenizing unit are symmetrically distributed on both sides of the corresponding air inlet channel, and the number of holes on a single side is 15-25.

[0014] According to another aspect of the present application, an embodiment of the present invention provides a semiconductor device, which includes the above-mentioned air intake disk structure.

[0015] Compared with the prior art, the air intake disc structure of the present invention has at least the following beneficial effects:

[0016] The air intake disk structure provided by the present invention includes an air intake disk body, an air intake unit, an air supply unit, and an air uniforming unit. The air intake unit is arranged on the side of the air intake disk body, the air supply unit is arranged in the air intake disk body and is connected to the air intake unit, and the air uniforming unit is arranged in the air supply unit. The air intake unit includes at least two independent air intake channels, the air supply unit includes at least two circles of independent air supply channels, the air uniforming unit has at least two groups, and the air intake channels, the air supply channels, and the air uniforming units correspond to each other one by one; wherein, the air uniforming unit includes a plurality of channels distributed along the circumferential direction, and the aperture of each channel gradually increases along a first direction, and the first direction is the direction from close to the corresponding air intake channel entrance to away from the corresponding air intake channel entrance.

[0017] The present invention provides at least two independent air inlet channels within the air inlet unit, each uniquely connecting to at least two independent air supply channels within the air supply unit. This allows for independent control and adjustment of the gas types and flow rates in different circumferential regions of the wafer, resolving the prior art issue of a single channel being unable to independently regulate the gas distribution in the sub-outer circle. Furthermore, by providing a gas leveling unit within each air supply channel and gradually increasing the channel diameter from near the air inlet channel entrance to further away, the flow resistance difference is utilized to balance the gas output flow rates at different circumferential locations of the air supply channel, overcoming the problem of uneven circumferential gas distribution within the annular channel and thereby improving the uniformity of thin film deposition along the circumference of the wafer.

[0018] The semiconductor device provided by the present invention is designed based on the above-mentioned air intake disk structure. Its beneficial effects can be found in the beneficial effects of the above-mentioned air intake disk structure, which will not be described in detail here.

[0019] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 A transverse cross-sectional view of an air intake disk structure at an air uniforming unit provided by an embodiment of the present invention is shown;

[0022] Figure 2 yes Figure 1 A partial enlarged view of point A in the middle;

[0023] Figure 3 A transverse cross-sectional view of an air intake plate structure at a first air intake channel provided by an embodiment of the present invention is shown;

[0024] Figure 4 A transverse cross-sectional view of an air intake plate structure provided by an embodiment of the present invention at a second air intake channel is shown;

[0025] Figure 5 A longitudinal cross-sectional view of an air intake plate structure provided by an embodiment of the present invention at a first air intake channel is shown;

[0026] Figure 6 A longitudinal cross-sectional view of an air intake plate structure provided by an embodiment of the present invention at a second air intake channel is shown;

[0027] Figure 7 A schematic structural diagram of an air intake disk structure provided by an embodiment of the present invention is shown;

[0028] Reference numerals:

[0029] 1. Air intake disc body; 2. Air intake unit; 21. First air intake channel; 22. Second air intake channel; 3. Air supply unit; 31. Outer ring air supply channel; 32. Secondary outer ring air supply channel; 4. Air uniformity unit; 41. First-level air uniformity section; 42. Second-level air uniformity section; 421. Branch channel. DETAILED DESCRIPTION

[0030] To further illustrate the technical means and effects employed by the present invention to achieve its intended objectives, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention is provided in conjunction with the accompanying drawings and preferred embodiments. In the following description, different references to "one embodiment" or "embodiment" do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics of one or more embodiments may be combined in any suitable manner.

[0031] In the description of the present invention, it should be clarified that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence; the terms "vertical", "transverse", "longitudinal", "front", "back", "left", "right", "up", "down", "horizontal", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, and do not mean that the devices or elements referred to must have a specific direction or position, and therefore cannot be understood as limiting the present invention.

[0032] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; and direct or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0033] In order to better understand the above technical solution, the above technical solution will be described in detail below with reference to the accompanying drawings and specific implementation methods.

[0034] Example 1

[0035] This embodiment provides an air intake disk structure, such as Figure 1-Figure 7 As shown, the air intake disk structure includes an air intake disk body 1, an air intake unit 2, an air supply unit 3 and an air uniforming unit 4. The air intake unit 2 is arranged on the side of the air intake disk body 1, the air supply unit 3 is arranged in the air intake disk body 1 and communicates with the air intake unit 2, and the air uniforming unit 4 is arranged in the air supply unit 3;

[0036] The air intake unit 2 includes at least two independent air intake channels, the air supply unit 3 includes at least two circles of independent air supply channels, the air uniforming unit 4 has at least two groups, and the air intake channels, the air supply channels and the air uniforming units 4 correspond to each other one by one; wherein, the air uniforming unit 4 includes a plurality of channels distributed along the circumferential direction, and the aperture of each of the channels gradually increases along a first direction, and the first direction is from close to the corresponding air intake channel entrance to away from the corresponding air intake channel entrance.

[0037] An air intake unit 2 is provided on the side of the air intake disk body 1, and the air intake unit 2 includes at least two independent air intake channels. Each air intake channel is connected to an independent air supply channel in the corresponding air supply unit 3 within the air intake disk body 1. An air leveling unit 4 is provided within each air supply channel, so that an air intake channel, an air supply channel, and an air leveling unit 4 form a set of independent air path systems, and the groups are not connected to each other. The air leveling unit 4 includes multiple channels arranged in a circumferential direction. For each group of systems, the aperture of the channels gradually increases from the position close to the entrance of the group of air intake channels to the direction away from the entrance (i.e., along the circumferential direction).

[0038] The main body of the gas inlet disk 1 constitutes the core support and gas flow carrier of the device. The gas inlet unit 2 introduces external gas separately through its at least two independent gas inlet channels. The gas supply unit 3 transports gas to the target annular area above the wafer through its at least two circles of independent gas supply channels. The gas uniformity unit 4 adjusts the circumferential distribution uniformity of the gas in the gas supply channel through its apertures with gradually changing apertures. The gas inlet channel is the entrance path for gas to enter the device. The gas supply channel is the chamber inside the device that transmits gas to the target area. The aperture is the specific airflow regulation structure of the gas uniformity unit 4, which produces different flow resistances through its aperture changes.

[0039] In this embodiment, external gas enters the device through different air inlet channels of the air inlet unit 2 respectively. The gas in each air inlet channel flows into a specific air supply channel of the air supply unit 3 that is uniquely connected to it. The gas flows in the air supply channel and reaches the gas uniformity unit 4 embedded therein. When the gas flows through the pores of the gas uniformity unit 4, the pores close to the entrance of the air inlet channel limit the gas flow due to their smaller pore size and larger flow resistance, while the pores away from the entrance of the air inlet channel allow more gas to pass through due to their larger pore size and smaller flow resistance. This aperture gradient design automatically compensates for the air pressure difference in the circumferential direction, so that the gas eventually flows out evenly from the outlet of the air supply channel along the entire circumference, covering the target annular area of ​​the wafer.

[0040] This embodiment provides at least two independent air inlet channels through the air inlet unit 2, each of which is uniquely connected to at least two independent air supply channels in the air supply unit 3. This allows the gas types and flow rates in different circumferential regions of the wafer to be independently controlled and adjusted, resolving the problem in the prior art where a single channel cannot independently regulate the gas distribution in the sub-outer circle. At the same time, by providing a gas leveling unit 4 in each air supply channel and gradually increasing the aperture of the channel from near the air inlet channel entrance to the farther away point, the flow resistance difference is utilized to balance the gas output flow rates at different circumferential positions of the air supply channel, overcoming the defect of uneven circumferential distribution of gas in the annular channel, thereby improving the uniformity of thin film deposition in the circumferential direction of the wafer.

[0041] In a specific embodiment, Figure 1 and Figure 2 As shown, the gas uniformity unit 4 includes a primary gas uniformity portion 41 and a secondary gas uniformity portion 42. The primary gas uniformity portion 41 includes a plurality of channels with gradually changing apertures, and the secondary gas uniformity portion 42 includes two branch channels 421. The output end of each channel is divided into two branch channels 421; and the flow resistance gradually decreases when the gas flows through the channel to the branch channel 421.

[0042] In the gas homogenizing unit 4, the first-level gas homogenizing section 41 includes multiple channels with gradually changing apertures distributed along the circumferential direction. The output end of each channel is connected to the second-level gas homogenizing section 42, which is composed of two branch channels 421. That is, the output end of each channel is evenly divided into two to connect the two branch channels 421. The gas flow path is characterized by first passing through the channel of the first-level gas homogenizing section 41 and then entering the corresponding two branch channels 421. During this process, because the flow cross-sectional area of ​​the branch channel 421 is larger than the channel upstream of it, the flow resistance gradually decreases as the gas flows through the channel to the branch channel 421.

[0043] The primary gas homogenizing section 41 achieves initial circumferential flow distribution and gas homogenization through a circumferentially varying aperture (smaller near the air inlet and larger farther from the air inlet). The secondary gas homogenizing section 42 performs secondary distribution and diffusion of the gas after the initial distribution by the primary gas homogenizing section 41. Branch channels 421, as a specific component of the secondary gas homogenizing section 42, receive and divert gas from a single aperture, further promoting uniform gas distribution by expanding the flow path, and reducing the gas flow rate for smoother flow.

[0044] In this embodiment, the gas first flows through the pores of the first-level gas homogenizing section 41, and the pore gradient (small near and large far) is used to compensate for the circumferential pressure difference to achieve the initial balance of the circumferential flow. Subsequently, the gas flowing out of each pore is evenly distributed to the two branch channels 421 downstream thereof. Since the flow cross-sectional area of ​​the branch channel 421 is larger than that of the upstream pore, the flow resistance is further reduced when the gas flows through here, the flow rate is reduced, and the turbulence is weakened. The coordinated work of the two-stage gas homogenizing structure causes the gas to undergo two distribution and diffusion processes. The final effect is to significantly improve the uniformity of the gas distribution in the circumferential direction and the smoothness of the flow when entering the reaction chamber.

[0045] In a specific embodiment, the aperture of the branch channel 421 is larger than the aperture of the corresponding channel.

[0046] The aperture size of the branch channel 421 is designed to be larger than the aperture of the corresponding channel in the first-level gas homogenizing section 41 directly connected to it upstream. This feature means that when the gas flows out from a single channel of the first-level gas homogenizing section 41 and enters the two branch channels 421 of the second-level gas homogenizing section 42, the flow cross-sectional area is significantly increased. This aperture relationship directly leads to the flow resistance encountered by the gas when flowing through the branch channel 421 being further reduced compared to when flowing through the upstream channel, thereby achieving a flow resistance reduction effect of the gas in the second-level gas homogenizing process. The flow resistance of the gas when entering the branch channel 421 from the channel is significantly reduced. Due to the expansion of the flow cross-section, the gas flow rate is reduced, the flow state is more stable, and the turbulence is reduced. This helps to promote the uniform diffusion and distribution of the gas in the branch channel 421, and is a further optimization and consolidation of the preliminary gas homogenizing effect of the first-level gas homogenizing section 41, and ultimately jointly improves the uniformity and stability of the gas output in the entire circumferential direction.

[0047] In a specific embodiment, the gas injection direction of the branch channel 421 forms an angle of 30°-45° with the horizontal plane of the air inlet disk body 1 .

[0048] The outlet direction of the branch channel 421 is set to form an inclined angle of 30° to 45° with the horizontal reference plane of the air inlet disk main body 1. This means that the gas ejected from the end of the branch channel 421 is not vertically downward, but enters the reaction chamber at an inclined angle of 30°-45°. Its core effect is to optimize the flow state of the gas after entering the reaction chamber. The inclined injection can reduce the vertical impact force of the gas on the wafer surface and avoid local airflow disturbances. At the same time, this angle prompts the gas to produce radial and circumferential diffusion components, enhancing the mixing and distribution uniformity of the gas in the target annular area on the wafer. The final effect is to further improve the deposition uniformity and process stability of the thin film from the edge to the sub-edge area of ​​the wafer.

[0049] In a specific embodiment, Figure 3-Figure 6 As shown, the air intake unit 2 includes a first air intake channel 21 and a second air intake channel 22, and the air supply unit 3 includes an outer ring air supply channel 31 and a sub-outer ring air supply channel 32; the first air intake channel 21 is connected to the outer ring air supply channel 31, and the second air intake channel 22 is connected to the sub-outer ring air supply channel 32.

[0050] The air intake unit 2 includes a first air intake channel 21 and a second air intake channel 22 that are independent of each other, and the air supply unit 3 includes an outer ring air supply channel 31 and a sub-outer ring air supply channel 32 that are independent of each other; wherein the first air intake channel 21 is directly connected with the outer ring air supply channel 31 inside the air intake disk body 1 to form an independent first air path system, and the second air intake channel 22 is directly connected with the sub-outer ring air supply channel 32 inside the air intake disk body 1 to form an independent second air path system, and the two air path systems are structurally not connected to each other.

[0051] This embodiment achieves precise and independent control of different edge areas of the wafer. Through the exclusive connection between the first air inlet channel 21 and the outer ring air supply channel 31, the type and flow of gas acting on the outermost area of ​​the wafer can be independently adjusted. Through the exclusive connection between the second air inlet channel 22 and the sub-outer ring air supply channel 32, the type and flow of gas acting on the sub-outer ring area of ​​the wafer can be independently adjusted. This physically isolated dual-channel design completely solves the problem in the background technology that a single channel cannot independently control the sub-outer ring gas distribution, and provides a differentiated process control method for the wafer edge to sub-edge area.

[0052] In a specific embodiment, Figures 1-4 As shown, the gas outlet of the outer ring gas supply channel 31 covers the edge area of ​​the wafer, and the gas outlet of the secondary outer ring gas supply channel 32 covers the secondary edge area of ​​the wafer; wherein, the edge area corresponds to an area with a radius between R1 and R2, and the secondary edge area corresponds to an area with a radius between R3 and R4, 120mm≤R1≤125mm, 145mm≤R2≤150mm, 60mm≤R3≤65mm, 85mm≤R4≤90mm.

[0053] The gas outlet of the outer ring gas supply channel 31 faces the annular area at the outermost edge of the wafer, while the gas outlet of the sub-outer ring gas supply channel 32 faces the annular area at the sub-outer edge of the wafer. The gas output from the outer ring gas supply channel 31 precisely covers the process adjustment area at the wafer edge (i.e., the outermost ring), while the gas output from the sub-outer ring gas supply channel 32 precisely covers the process adjustment area at the sub-edge of the wafer (i.e., the sub-outer ring). The core effect of this feature is that the physically isolated dual-channel design enables independent gas supply to the wafer edge and sub-edge areas. This allows the gas from the outer ring gas supply channel 31 to act only on the thin film deposition process in the edge area, while the gas from the sub-outer ring gas supply channel 32 to act only on the thin film deposition process in the sub-edge area, thereby providing differentiated gas environment control capabilities for different radial positions of the wafer.

[0054] The optimal radius range for the edge region is R1 = 122.5mm to R2 = 147.5mm, and the optimal radius range for the sub-edge region is R3 = 62.5mm to R4 = 87.5mm. This numerical range produces two benefits: First, the outer ring gas supply channel 31 covers a 25mm-wide annular area of ​​122.5-147.5mm, precisely corresponding to the high-uniformity sensitive area at the outermost edge of the wafer; the sub-outer ring gas supply channel 32 covers a 25mm-wide annular area of ​​62.5-87.5mm, precisely corresponding to the critical control area at the sub-outer edge of the wafer. Second, the 25mm ring width design ensures effective gas coverage of the target area while avoiding overlap with adjacent functional areas. The 122.5mm starting point avoids the sensitive area at the center of the wafer, the 147.5mm ending point covers the entire edge, the 62.5mm starting point connects to the central uniform area, and the 87.5mm ending point precisely separates the edge from the sub-edge, collectively enabling refined and independent control of the wafer edge-to-sub-edge gradient process.

[0055] In a specific embodiment, the outer ring gas supply channel 31 and the sub-outer ring gas supply channel 32 are independent of each other, so as to respectively introduce gas media with independently controlled flow rates or components.

[0056] The outer ring gas supply channel 31 and the secondary outer ring gas supply channel 32 maintain physically isolated independent cavity structures inside the gas inlet disk main body 1, and there is no gas communication path between the two; based on this structural characteristic, the outer ring gas supply channel 31 can be independently connected to the external gas source system A and pass a gas medium with a specific flow rate and component (such as a reaction gas or an inert gas), and the secondary outer ring gas supply channel 32 can be independently connected to the external gas source system B and pass a gas medium with the same or different flow rate and the same or different component as the channel (such as another reaction gas or an inert gas), and the gas parameters of the two channels are respectively regulated by independent gas source control systems. The core effect of this feature is to achieve decoupled control of process parameters in the wafer edge area and the sub-edge area: a customized gas environment is independently input to the wafer edge area (such as 122.5-147.5mm) through the outer ring gas supply channel 31, and at the same time, a differentiated gas environment is independently input to the wafer sub-edge area (such as 62.5-87.5mm) through the sub-outer ring gas supply channel 32, thereby accurately controlling the concentration distribution of reactants in different annular areas, solving the technical defect that a single channel cannot perform zoned control, and significantly improving the deposition uniformity of the thin film in the radial direction of the wafer.

[0057] In a specific embodiment, the apertures of the channels increase linearly along the first direction, and the increase coefficient of the apertures of adjacent channels is 0.05-0.2 mm.

[0058] The apertures of all the channels in the gas uniformity unit 4 increase linearly and uniformly along the first direction (i.e., from the circumferential direction close to the corresponding air inlet channel entrance to the circumferential direction away from the entrance), and the aperture increase value between adjacent channels is a fixed difference, and the difference range is set to 0.05mm to 0.2mm. Among them, 0.1mm is used as the optimal increase coefficient, then the aperture of the first channel closest to the air inlet channel entrance is the smallest, and the aperture of each channel thereafter increases by 0.1mm in sequence until the aperture of the last channel away from the air inlet channel entrance is the largest. The core effect of this feature is to achieve regular compensation for the circumferential air pressure attenuation in the air supply channel through precisely controlled linear aperture gradients: a smaller increase coefficient is suitable for high-precision fine-tuning scenarios and can generate a smooth flow resistance transition; a larger increase coefficient is suitable for processes that require significant flow compensation and can produce obvious step changes in flow resistance; the optimal 0.1mm increase coefficient has been verified to achieve the best balance in gas uniformity. This quantifiable linear growth design ensures that the gas flow rate is highly consistent when it is output from the channels along the entire circumference, completely solving the problem of uneven circumferential distribution of gas in the background technology.

[0059] In a specific embodiment, the holes of the gas homogenizing unit 4 are symmetrically distributed on both sides of the corresponding air inlet channel, and the number of holes on a single side is 15-25.

[0060] In this embodiment, all the channels are symmetrically distributed in the circumferential direction with the inlet axis of the corresponding air inlet channel (such as the first air inlet channel 21 or the second air inlet channel 22) as the symmetry center. At the same time, the number of channels distributed on a single side (i.e., on one side of the symmetry center) is set to 15 to 25, with the optimal number being 20. The core effects of this feature are reflected in three aspects: first, the symmetrical distribution design ensures that the airflow distribution on both sides of the air inlet channel is completely balanced, eliminating the circumferential flow deviation caused by the asymmetric layout; second, the range of 15-25 channels on a single side takes into account both gas uniformity accuracy and processing feasibility. 15 holes can meet basic gas uniformity requirements and reduce processing complexity, 25 holes can improve gas distribution resolution, and the optimal 20-hole design can achieve fine flow regulation in the circumferential direction with a reasonable density; third, the symmetrical and optimized number of channel groups work together on the gas uniformity unit 4, so that the gas obtains a highly consistent mass flow output at the entire circumferential outlet of the air supply channel, completely solving the defect of uneven circumferential distribution of gas in the background technology.

[0061] In this embodiment, the gas first enters the air inlet disk body 1 independently through the first air inlet channel 21 and the second air inlet channel 22 of the air inlet unit 2. The gas in the first air inlet channel 21 flows into the outer ring air supply channel 31 connected to it, and the gas in the second air inlet channel 22 flows into the secondary outer ring air supply channel 32 connected to it, with the gases in the two channels completely isolated. Within the outer ring air supply channel 31, the gas flows to the primary air uniformity section 41 of the air uniformity unit 4. The channels in this section are symmetrically distributed along the circumference, and the aperture increases linearly from the entrance of the first air inlet channel 21 to the distal direction. The gas is initially evenly distributed around the circumference by limiting the flow rate with a small aperture and high flow resistance at the proximal end and increasing the flow rate with a large aperture and low flow resistance at the distal end. The gas is then diverted from the output end of each channel of the primary air uniformity section 41 to the two branch channels 421 of the secondary air uniformity section 42. Because the aperture of the branch channel 421 is larger than that of the corresponding channel, the flow cross-section is expanded, further reducing the flow resistance, reducing the gas flow rate, and making the flow more stable. The branch channel 421 sprays gas into the chamber at an angle of 30°-45°, reducing airflow impact and enhancing diffusion. Ultimately, the gas in the outer ring gas supply channel 31 evenly covers the wafer edge area of ​​122.5-147.5mm. At the same time, the gas in the secondary outer ring gas supply channel 32 undergoes the same process: after being homogenized by the aperture gradient channel of the first-level gas uniformity section 41, it is diverted to the branch channel 421 of the secondary gas uniformity section 42 to reduce resistance and speed, and then ejected at an inclined angle, evenly covering the secondary edge area of ​​62.5-87.5mm of the wafer. The flow rate or composition of the gas medium introduced into the two gas supply channels can be independently controlled to achieve differentiated and precise regulation of different annular areas of the wafer.

[0062] Example 2

[0063] This embodiment provides a semiconductor device, which includes the air intake disk structure described in Embodiment 1.

[0064] By integrating the gas inlet disk structure of Example 1, this semiconductor device achieves a breakthrough optimization of the wafer edge process: its outer ring gas supply channel 31 and sub-outer ring gas supply channel 32 can independently introduce gas media of different flow rates or compositions, accurately regulating the reactant concentration distribution in the wafer edge area (122.5-147.5mm) and the sub-edge area (62.5-87.5mm), solving the defect that a single channel cannot be zonal controlled. At the same time, the first-level gas uniformity section 41 of the gas uniformity unit 4 compensates for the circumferential gas pressure attenuation through a linear gradient aperture channel, and the branch channel 421 of the second-level gas uniformity section 42 reduces the flow resistance by enlarging the aperture and injects at an inclination angle of 30°-45°. The two stages work together to ensure uniform and smooth gas output in the circumferential direction. The ultimate effect is to significantly improve the uniformity of thin film deposition from the wafer edge to the sub-edge area, especially meeting the advanced process requirements of single-pass deposition of multi-layer thin films, and enhancing device performance and production yield.

[0065] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. An air intake disc structure, characterized in that: The air intake disk structure includes an air intake disk body, an air intake unit, an air supply unit, and an air uniforming unit. The air intake unit is arranged on the side of the air intake disk body, the air supply unit is arranged in the air intake disk body and communicated with the air intake unit, and the air uniforming unit is arranged in the air supply unit. The air intake unit includes at least two independent air intake channels, the air supply unit includes at least two circles of independent air supply channels, the air uniforming unit has at least two groups, and the air intake channels, the air supply channels and the air uniforming units correspond to each other one by one; wherein, the air uniforming unit includes a plurality of channels distributed along the circumferential direction, and the aperture of each of the channels gradually increases along a first direction, and the first direction is from close to the corresponding air intake channel entrance to away from the corresponding air intake channel entrance.

2. The air intake disc structure according to claim 1, characterized in that: The gas homogenizing unit includes a primary gas homogenizing portion and a secondary gas homogenizing portion, wherein the primary gas homogenizing portion includes a plurality of channels with gradually varying apertures, and the secondary gas homogenizing portion includes two branch channels, wherein the output end of each channel is divided into two branch channels; Furthermore, the flow resistance gradually decreases when the gas flows through the hole to the branch channel.

3. The air intake disk structure according to claim 1, characterized in that: The pore size of the branch channel is larger than the pore size of the corresponding channel.

4. The air intake disk structure according to claim 2, characterized in that: The gas injection direction of the branch channel forms an angle of 30°-45° with the horizontal plane of the air inlet disk body.

5. The air intake disk structure according to claim 1, characterized in that: The air intake unit includes a first air intake channel and a second air intake channel, and the air supply unit includes an outer ring air supply channel and a sub-outer ring air supply channel; the first air intake channel is connected to the outer ring air supply channel, and the second air intake channel is connected to the sub-outer ring air supply channel.

6. The air intake disk structure according to claim 5, characterized in that: The gas outlet of the outer ring gas supply channel covers the edge area of ​​the wafer, and the gas outlet of the secondary outer ring gas supply channel covers the secondary edge area of ​​the wafer; wherein, the edge area corresponds to the area with a radius between R1-R2, and the secondary edge area corresponds to the area with a radius between R3-R4, 120mm≤R1≤125mm, 145mm≤R2≤150mm, 60mm≤R3≤65mm, 85mm≤R4≤90mm.

7. The air intake disk structure according to claim 5, characterized in that: The outer ring gas supply channel and the sub-outer ring gas supply channel are independent of each other, so as to respectively introduce gas media with independently controlled flow or components.

8. The air intake disk structure according to claim 1, characterized in that: The apertures of the pores increase linearly along the first direction, and the increase coefficient of the apertures of adjacent pores is 0.05-0.2 mm.

9. The air intake disk structure according to claim 1, characterized in that: The holes of the air homogenizing unit are symmetrically distributed on both sides of the corresponding air inlet channel, and the number of holes on a single side is 15-25.

10. A semiconductor device, characterized in that: The semiconductor device comprises the air intake disk structure according to any one of claims 1 to 9.

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