Wafer processing compensation method and device

Abstract

The invention relates to the technical field of semiconductor processing, in particular to a wafer processing compensation method and device, and the method comprises the steps: collecting the position of a second cutter mechanism on a cross beam; based on the collected position of the second tool mechanism, determining a first deformation influence factor of the second tool mechanism on the first tool mechanism; and based on the first deformation influence factor, determining a first compensation amount of a first cutter mechanism. The corresponding compensation amount is made based on the deformation amount, and the technical effect of improving the machining precision is achieved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a wafer processing compensation method and device. Background Art

[0002] The cutting tools of the wafer processing device are generally movably connected to a structure such as a gantry, and the cutting tools can move on the gantry to change the working position.

[0003] In the prior art, the tool at the processing station often causes the gantry to be subjected to force and deformed during movement, resulting in a deviation between the actual feed depth and the preset feed depth, thereby affecting the processing accuracy.

[0004] Therefore, the technical problem of the prior art is that the processing accuracy is low. Summary of the Invention

[0005] The present application provides a wafer processing compensation method and device, which achieves the technical effect of improving processing accuracy by making corresponding compensation amounts based on deformation amounts.

[0006] On the one hand, the present application provides a wafer processing compensation method, which adopts the following technical solutions:

[0007] A wafer processing compensation method is applied to a processing device, the processing device comprising:

[0008] A gantry, the gantry comprising a first support column and a second support column, wherein a crossbeam is connected between the first support column and the second support column;

[0009] a first tool mechanism, the first tool mechanism being movably connected to the crossbeam, the first tool mechanism having at least a degree of freedom of movement along the crossbeam and a degree of freedom of movement about a vertical direction; and

[0010] a second tool mechanism, the second tool mechanism being movably connected to the crossbeam, the second tool mechanism having at least a degree of freedom of movement along the crossbeam and a degree of freedom of movement about a vertical direction;

[0011] The method comprises:

[0012] collecting a position of the second tool mechanism on the beam;

[0013] determining a first deformation influence factor of the second tool mechanism on the first tool mechanism based on the acquired position of the second tool mechanism;

[0014] Based on the first deformation influencing factor, a first compensation amount of the first tool mechanism is determined.

[0015] Preferably, the “determining a first deformation influence factor of the second tool mechanism on the first tool mechanism based on the position of the second tool mechanism” includes:

[0016] Determine a first vertical displacement Δh(i) of the first tool mechanism based on the position i of the second tool mechanism;

[0017] The first displacement Δh(i) is the vertical displacement of the first tool mechanism caused by the second tool mechanism deforming the beam.

[0018] Preferably, the “determining a first displacement Δh(i) of the first tool mechanism in the vertical direction” includes:

[0019] Define the benchmark platform;

[0020] Collecting a first height from the first tool mechanism to the reference platform as h0;

[0021] enabling the second tool mechanism to slide on the beam;

[0022] The second height from the first tool mechanism to the reference platform is h i ;

[0023] Based on the collected first height h0 and second height h i , determine the first displacement as △h(i)=h0-h i .

[0024] Preferably, i sampling points are set on the crossbeam along the travel of the second tool mechanism;

[0025] When the second tool mechanism is at each sampling point, the first displacement △h(i) of the first tool mechanism is collected to establish a discrete data set (y i ,△h(i)).

[0026] Preferably, the discrete data set is fitted into a continuous function by an interpolation method, wherein the interpolation method includes linear interpolation and / or cubic spline interpolation, so as to determine the first displacement Δh(i) of the first tool mechanism based on any position i of the second tool mechanism.

[0027] Preferably, the first tool mechanism comprises a first tool, and the first tool has a rotational freedom of rotation about a vertical direction;

[0028] The method further includes: the first tool is formed at an angular position θ relative to the wafer, and the first tool mechanism performs, at each angular position θ:

[0029] collecting a position of the second tool mechanism on the beam;

[0030] determining a first deformation influence factor of the second tool mechanism on the first tool mechanism based on a position of the second tool mechanism;

[0031] Based on the first deformation influencing factor, a first compensation amount of the first tool mechanism is determined.

[0032] As an option, it also includes:

[0033] Collect the actual cutting depth of the previous wafer;

[0034] determining, based on the collected actual feed depth of the last wafer, a second deformation influence factor of the first tool mechanism on the first tool mechanism;

[0035] determining a second compensation amount of the first tool mechanism based on the second deformation influencing factor;

[0036] Based on the first compensation amount and the second compensation amount, a comprehensive compensation amount of the first tool mechanism is determined.

[0037] Preferably, the “determining the second deformation influence factor of the first tool mechanism on the first tool mechanism based on the actual feed depth of the previous wafer collected” includes:

[0038] Determining a second vertical displacement Δz of the first tool mechanism based on an actual feed depth of a previous wafer;

[0039] Therefore, the second displacement Δz is the vertical offset of the first tool mechanism caused by the deformation of the beam by the first tool mechanism.

[0040] Preferably, the “determining the comprehensive compensation amount of the first tool mechanism based on the first compensation amount and the second compensation amount” includes:

[0041] The comprehensive compensation amount C is:

[0042] C=C1+C2

[0043] Wherein, C1 is the first compensation amount;

[0044] C2 is the second compensation amount.

[0045] On the other hand, the present application provides a wafer processing device, which adopts the following technical solution:

[0046] A wafer processing device, comprising:

[0047] A gantry, the gantry comprising a first support column and a second support column, wherein a crossbeam is connected between the first support column and the second support column;

[0048] a first tool mechanism, the first tool mechanism being movably connected to the crossbeam, the first tool mechanism having at least a degree of freedom of movement along the crossbeam and a degree of freedom of movement about a vertical direction;

[0049] a second tool mechanism, the second tool mechanism being movably connected to the crossbeam, the second tool mechanism having at least a degree of freedom of movement along the crossbeam and a degree of freedom of movement about a vertical direction; and

[0050] A turntable is located below the first tool mechanism and the second tool mechanism. The turntable is used to carry the wafer. The turntable has a rotational freedom around an axis so that the turntable drives the wafer to rotate.

[0051] In summary, this application includes at least one of the following beneficial technical effects:

[0052] This application can make corresponding compensation based on the deformation amount based on the mutual deformation influence between the associated first tool mechanism and the second tool mechanism, so as to achieve the actual feed depth meeting the process requirements and improve the wafer processing accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 is a schematic diagram of the wafer processing apparatus described in this application;

[0054] Figure 2 It is a schematic diagram of the wafer processing compensation method described in this application;

[0055] Figure 3 Schematic diagram of the position i of the second tool mechanism in the wafer processing compensation method described in this application;

[0056] Figure 4 This is a schematic diagram of the angular position θ of the first tool mechanism in the wafer processing compensation method described in this application.

[0057] Explanation of reference numerals: 100, gantry; 110, first support column; 120, second support column; 130, crossbeam; 200, first tool mechanism; first tool; 300, second tool mechanism; 400, turntable. DETAILED DESCRIPTION

[0058] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application include direct and indirect connections (couplings) unless otherwise specified. In the description of this application, it should be understood that the orientations or positional relationships indicated by the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0059] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0060] The embodiments of the present application provide a wafer processing compensation method and device, which achieve the technical effect of improving processing accuracy by making corresponding compensation amounts based on deformation amounts.

[0061] In order to better understand the above technical solution, the following will be described in detail with reference to the accompanying drawings and specific implementation methods. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0062] In the wafer processing equipment and actual production application process, the tools on the processing stations are generally slidably connected to the gantry structure, such as trimming machines and other equipment. The tool's moving module and spindle structure will cause a certain deformation of the gantry structure due to the action of gravity, causing a deviation between the actual feed depth of the tool on the wafer and the preset feed depth, affecting the processing accuracy.

[0063] When the tool is located at different positions of the gantry structure, the center of gravity position of the tool's moving module changes accordingly, causing the gantry structure to produce different degrees of deformation. Therefore, in a single-station processing device, it is necessary to consider the deformation influence of the tool itself on the gantry structure; in a double-station processing device, it is necessary not only to consider the deformation influence of the tool itself on the gantry structure, but also to consider the influence of the other tool causing the gantry structure to deform and on the current tool. In other words, the actual feed depth of one of the tools is affected by the position change of the other tool on the gantry structure, that is, the two groups of tools affect each other.

[0064] Furthermore, the research and development of dual-station equipment is to improve the production rhythm. The actions of the two stations will be misaligned in time sequence, that is, there is a situation where one tool is processing while the other tool is moving sideways, resulting in great uncertainty in the feed depth error of the tool being processed, which will seriously affect the processing accuracy; based on this, the present application provides a wafer processing compensation method and device, which can improve the wafer processing accuracy, realize the compensation of processing errors caused by gravity deformation of the equipment structure, and overcome the mutual influence between the two groups of tools.

[0065] The present application provides a wafer processing compensation method, which is applied to a processing device, such as Figure 1 As shown, the processing device includes a gantry 100, a first tool mechanism 200, a second tool mechanism 300 and a turntable 400; the gantry 100 includes a first column 110 and a second column 120, and a beam 130 is connected between the first column 110 and the second column 120; the first tool mechanism 200 is movably connected to the beam 130, and the first tool mechanism 200 has at least the freedom of movement along the direction of the beam 130 and the freedom of movement around the vertical direction; the second tool mechanism 300 is movably connected to the beam 130, and the second tool mechanism 300 has at least the freedom of movement along the direction of the beam 130 and the freedom of movement around the vertical direction; the turntable 400 is arranged below the first tool mechanism 200 and the second tool mechanism 300, and the turntable 400 is provided with two groups and corresponds one to one with the first tool mechanism 200 and the second tool mechanism 300. The turntable 400 is used to carry and adsorb wafers so that the first tool mechanism 200 and the second tool mechanism 300 can process the wafers on the turntable 400.

[0066] like Figure 2 As shown, the wafer processing compensation method includes:

[0067] S1: Acquire the position of the second tool mechanism 300 on the beam 130;

[0068] S2: determining a first deformation influence factor of the second tool mechanism 300 on the first tool mechanism 200 based on the acquired position of the second tool mechanism 300;

[0069] S3: Determine a first compensation amount of the first tool mechanism 200 based on the first deformation influencing factor.

[0070] It can be understood that the first compensation amount for the first tool mechanism 200 is determined based on the second tool mechanism 300, and the position of the second tool mechanism 300 on the beam 130 has different degrees of influence on the first tool mechanism 200, so the first tool mechanism 200 needs to be compensated accordingly; more specifically, "determining the first deformation influence factor of the second tool mechanism 300 on the first tool mechanism 200 based on the collected position of the second tool mechanism 300" includes: based on the position i of the second tool mechanism 300, determining the first displacement △h(i) of the first tool mechanism 200 in the vertical direction; the first displacement △h(i) is the vertical offset of the first tool mechanism 200 caused by the second tool mechanism 300 deforming the beam 130.

[0071] It is understandable that if Figure 1 、 2 As shown, the first tool mechanism 200 and the second tool mechanism 300 act as loads on the beam 130. When the second mechanism moves on the beam 130, the bending moment distribution of the beam 130 changes with the position of the second tool mechanism 300, thereby causing the beam 130 to deform to varying degrees; the second tool mechanism 300 causes the beam 130 to deform. Since the first tool mechanism 200 and the second tool mechanism 300 are both slidingly connected to the same beam 130, the deformation of the beam 130 caused by the second tool mechanism 300 will act on the first tool mechanism 200. In other words, the vertical position change of the first tool mechanism 200 is due to the displacement caused by the deformation of the beam 130. The offset is the first displacement △h(i). The first displacement △h(i) will directly affect the machining accuracy of the first tool mechanism 200, such as the feed depth.

[0072] Specifically, “determining the first displacement Δh(i) of the first tool mechanism 200 in the vertical direction” includes:

[0073] Define the reference platform; collect the first height of the first tool mechanism 200 to the reference platform as h0; make the second tool mechanism 300 slide on the beam 130; collect the second height of the first tool mechanism 200 to the reference platform as h i ; Based on the collected first height h0 and second height h i , determine the first displacement as △h(i)=h0-h i .

[0074] Specifically, a measurement reference system is established and a reference platform is defined to provide a measurement reference to ensure that the reference for height measurement is consistent. In one embodiment, the reference platform can be the top surface of the wafer or the top surface of the turntable 400 .

[0075] Measure the initial height of the first tool mechanism 200, that is, the first height is h0, first move the second tool mechanism 300 to the initial position, the initial position can be close to the end of the beam 130; collect the distance from the first tool mechanism 200 to the reference platform through the laser position sensor, that is, the first height is h0.

[0076] Then, the second tool mechanism 300 is moved to measure the height of the first tool mechanism 200 to the second height of the reference platform after the deformation of the beam 130. i , move the second tool mechanism 300 to position i. At this time, the crossbeam 130 is deformed due to the gravity load of the second tool mechanism 300, causing the first tool mechanism 200 to deviate in the vertical direction. The laser displacement sensor is used to collect the distance from the first tool mechanism 200 to the reference platform, that is, the second height is h i .

[0077] Based on the first height h0 and the second height h i Determine the first displacement △h(i)=h0-h i If h1 < h0, the beam 130 bends downward, and the first tool mechanism 200 deflects downward along with the beam 130, with an offset of h0-h i is a positive value, that is, upward compensation is required; if h1>h0, the beam 130 bends upward, and the first tool mechanism 200 deflects upward along with the beam 130, and the deflection amount is h0-h i A negative value indicates that downward compensation is required. It is understood that generally, when the first tool mechanism 200 deflects downward in the vertical direction, upward compensation is required. This direct quantification of the causal relationship between "second tool mechanism 300 position → beam 130 deformation → first tool mechanism 200 deflection" through two height differences avoids complex mechanical calculations and adapts to the nonlinear deformation of actual equipment.

[0078] Furthermore, the full range of stroke compensation is covered by discrete sampling and continuous interpolation. Figure 3 As shown, i sampling points are set on the travel of the second tool mechanism 300 on the beam 130; when the second tool mechanism 300 is at each sampling point, the first displacement △h(i) of the first tool mechanism 200 is collected to establish a discrete data set (y i , △h(i)). The discrete data set is fitted into a continuous function through an interpolation method, where the interpolation method includes but is not limited to linear interpolation, cubic spline interpolation, etc., so as to determine the first displacement △h(i) of the first tool mechanism 200 based on any position i of the second tool mechanism 300.

[0079] Specifically, such as Figure 3As shown, the second tool mechanism 300 sets i sampling points within the moving range of the beam 130. Preferably, the sampling points can be evenly and equidistantly set;

[0080] For each sampling point of the second tool mechanism 300, the above process of “collecting the first displacement △h(i) of the first tool mechanism 200” is repeated to obtain a discrete data set (y i ,△h(i)).

[0081] In the discrete data set (y i , △h(i)), the discrete data set can be fitted into a continuous function by interpolation to determine the first displacement △h(i) of the first tool mechanism 200 based on any position i of the second tool mechanism 300. In one embodiment, a linear interpolation method can be used: for △h(i) at any position between adjacent sampling points i1 and i2, if:

[0082] In other embodiments, a cubic spline interpolation method may be used: a cubic polynomial is constructed to fit discrete points, so that the curve is second-order continuous and differentiable, adapting to the nonlinear deformation of the beam 130 with "large deflection in the middle and small deflection at both ends", thereby improving compensation accuracy.

[0083] In this way, the discrete “position-offset” relationship is converted into a continuous function, supporting real-time compensation during dynamic movement of the second tool mechanism 300 .

[0084] It can be understood that at each position where the first tool mechanism 200 moves, it is necessary to consider the error influence of the second tool mechanism 300 on the first tool mechanism 200 at the current position; that is, it is necessary to repeat the above-mentioned "sampling, interpolation, and modeling" process, and during processing, call the △h(θ,i) model to determine the first compensation amount.

[0085] On the basis of the above-mentioned first deformation influencing factor, that is, the deformation of the beam 130 by the second tool mechanism 300 causes the processing error of the first tool mechanism 200; on this basis, the present application introduces the second deformation influencing factor. The second deformation influencing factor refers to the deformation of the beam 130 by the gravity of the first tool mechanism 200 itself, which will also cause the processing error of the first tool mechanism 200.

[0086] The wafer processing compensation method also includes: the first tool mechanism 200 performs wafer processing after compensation for the first deformation influence factor, and collects the actual feed depth of the wafer after processing; based on the collected actual feed depth of the wafer after processing, determines the second deformation influence factor of the first tool mechanism 200 on the first tool mechanism 200; based on the second deformation influence factor, determines the second compensation amount of the first tool mechanism 200; based on the first compensation amount and the second compensation amount, determines the comprehensive compensation amount of the first tool mechanism 200; the comprehensive compensation amount C is: C=C1+C2, C1 is the first compensation amount; C2 is the second compensation amount.

[0087] It should be understood that the second deformation influencing factor includes the error effect caused by the deformation of the first tool mechanism on the beam; further, the second deformation influencing factor also includes error effects such as equipment installation accuracy error and grinding wheel wear error, all of which are taken into account in the second deformation influencing factor.

[0088] Among them, "determining the second deformation influencing factor of the first tool mechanism 200 on the first tool mechanism 200 based on the actual feed depth of the processed wafer collected" includes: determining the second displacement △z of the first tool mechanism 200 in the vertical direction based on the actual feed depth of the processed wafer; so the second displacement △z is the vertical offset of the first tool mechanism 200 caused by the first tool mechanism 200 causing the beam 130 to deform.

[0089] Specifically, after the wafer processing is completed, the actual cutting depth on the wafer is obtained by optical measurement to reflect the actual processing condition of the first tool mechanism 200, which is defined as D 实际 At the same time, the feed depth is preset in the processing device logic and defined as D 预设 ; Thus, after wafer processing, D 实际 , while reading D 预设 By calculating the difference, the influence of the first tool mechanism 200 on the deformation of the beam 130 is determined, including the influence of errors such as equipment installation accuracy error and grinding wheel wear error. More specifically, the second vertical displacement of the first tool mechanism 200 caused by the deformation of the beam 130 by the first tool mechanism 200 is defined as △z, △z=D 实际 -D 预设 , if D 实际 >D 预设 This indicates that the actual feed depth is greater than the preset feed depth, which means that the first tool mechanism 200 itself is deformed and deflected downward, so Δz>0.

[0090] Furthermore, Figure 4As shown, the first tool mechanism 200 includes a first tool 210, and the turntable 400 has a rotational freedom of rotation around the vertical direction; during the rotation of the turntable 400, the first tool 210 forms an angular position θ compared to the wafer or the turntable 400, and for each θ, the cutting depth of the first tool 210 is different, that is, the first tool 210 will produce different △z at different angular positions θ. Therefore, the method also includes: the first tool 210 forms an angular position θ compared to the wafer through the rotation of the turntable 400, and at each angular position θ, executing: collecting the actual feed depth of the wafer processed by the first tool 210 after compensation for the first deformation influence factor; determining the second deformation influence factor of the first tool mechanism 200 on the first tool mechanism 200 based on the collected actual feed depth of the processed wafer; and determining the second compensation amount of the first tool mechanism 200 based on the second deformation influence factor.

[0091] Specifically, the above process of “sampling, interpolation, and modeling” is repeated for each key lateral position y of the first tool. The actual feed depth of the wafer processed when the first tool is at y is collected, and a further △z model corresponding to the key lateral position y of the first tool is established. During processing, the lateral position y and the angle position θ are obtained, and the △z corresponding to the lateral position y is called. 实际 -D 预设 model, and determine the second compensation amount.

[0092] The load exerted by the first tool mechanism 200 on the beam 130 causes the beam 130 to bend, ultimately causing the first tool mechanism 200 itself to produce an offset in the vertical direction. That is, the first tool mechanism 200 causes the beam 130 to deform and react on itself. In this way, the macro-machining error (feed depth difference) is mapped to the micro-deformation (△z), breaking through the technical bottleneck of the difficulty in directly measuring the deformation itself, and realizing low-cost, high-correlation deformation reverse deduction.

[0093] Furthermore, since △z represents the second offset of the first tool mechanism 200 in the vertical direction, the compensation amount needs to offset the offset in the opposite direction: C2 = -△z; for example, if △z = +3μm, the first tool mechanism 200 is offset downward by 3μm, then C2 = -3μm, and the vertical upward movement of the first tool mechanism 200 is controlled by 3μm to offset the error caused by itself in the load on the beam 130.

[0094] Based on the first compensation amount and the second compensation amount, a comprehensive compensation amount is determined to comprehensively and accurately compensate for the error of the first tool mechanism 200. The first compensation amount C1 and the second compensation amount C2 are added together to obtain a comprehensive compensation amount C=C1+C2.

[0095] The present application also provides a wafer processing device, which is applicable to the above-mentioned wafer processing compensation method, such as Figure 1 As shown, the processing device includes a gantry 100, a first tool mechanism 200, a second tool mechanism 300 and a turntable 400; the gantry 100 includes a first column 110 and a second column 120, and a beam 130 is connected between the first column 110 and the second column 120; the first tool mechanism 200 is movably connected to the beam 130, and the first tool mechanism 200 has at least the freedom of movement along the direction of the beam 130 and the freedom of movement around the vertical direction; the second tool mechanism 300 is movably connected to the beam 130, and the second tool mechanism 300 has at least the freedom of movement along the direction of the beam 130 and the freedom of movement around the vertical direction; the turntable 400 is arranged below the first tool mechanism 200 and the second tool mechanism 300, and the turntable 400 is provided with two groups and corresponds one to one to the first tool mechanism 200 and the second tool mechanism 300. The turntable 400 is used to carry and adsorb wafers so that the first tool mechanism 200 and the second tool mechanism 300 can process the wafers on the turntable 400.

[0096] Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0097] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A wafer processing compensation method, characterized in that: Applicable to a processing device, the processing device comprising: A gantry (100), the gantry (100) comprising a first support column (110) and a second support column (120), wherein a crossbeam (130) is connected between the first support column (110) and the second support column (120); a first tool mechanism (200), the first tool mechanism (200) being movably connected to the crossbeam (130), the first tool mechanism (200) having at least a degree of freedom of movement along the crossbeam (130) and a degree of freedom of movement about a vertical direction; and a second tool mechanism (300), the second tool mechanism (300) being movably connected to the crossbeam (130), the second tool mechanism (300) having at least a degree of freedom of movement along the crossbeam (130) and a degree of freedom of movement about a vertical direction; The method comprises: collecting the position of the second tool mechanism (300) on the beam (130); determining a first deformation influence factor of the second tool mechanism (300) on the first tool mechanism (200) based on the acquired position of the second tool mechanism (300); Based on the first deformation influencing factor, a first compensation amount of the first tool mechanism (200) is determined.

2. The wafer processing compensation method according to claim 1, characterized in that: The step of “determining a first deformation influence factor of the second tool mechanism (300) on the first tool mechanism (200) based on the position of the second tool mechanism (300)” includes: Determining a first displacement Δh(i) of the first tool mechanism (200) in the vertical direction based on a position i of the second tool mechanism (300); The first displacement Δh(i) is the vertical offset of the first tool mechanism (200) caused by the second tool mechanism (300) deforming the beam (130).

3. The wafer processing compensation method according to claim 2, characterized in that: The step of “determining a first displacement Δh(i) of the first tool mechanism (200) in the vertical direction” includes: Define the benchmark platform; Collecting a first height of the first tool mechanism (200) to the reference platform as h0; enabling the second tool mechanism (300) to slide on the crossbeam (130); The second height h from the first tool mechanism (200) to the reference platform is collected. i ; Based on the collected first height h0 and second height h i , determine the first displacement as △h(i)=h0-h i .

4. The wafer processing compensation method according to claim 2, characterized in that: On the crossbeam (130), i sampling points are set on the travel of the second tool mechanism (300); When the second tool mechanism (300) is at each sampling point, the first displacement Δh(i) of the first tool mechanism (200) is collected to establish a discrete data set (y i ,△h(i)).

5. The wafer processing compensation method according to claim 4, characterized in that: The discrete data set is fitted into a continuous function by an interpolation method to determine a first displacement Δh(i) of the first tool mechanism (200) based on an arbitrary position i of the second tool mechanism (300).

6. A wafer processing compensation method according to claims 1 to 5, characterized in that: The first tool mechanism (200) comprises a first tool (210), wherein the first tool (210) has a rotational freedom of rotation about a vertical direction; The method further comprises: the first tool (210) forms an angular position θ relative to the wafer, and the first tool (210) performs, at each angular position θ: collecting the position of the second tool mechanism (300) on the beam (130); determining a first deformation influence factor of the second tool mechanism (300) on the first tool mechanism (200) based on the position of the second tool mechanism (300); Based on the first deformation influencing factor, a first compensation amount of the first tool mechanism (200) is determined.

7. The wafer processing compensation method according to claim 1, characterized in that: Also includes: Collect the actual cutting depth of the previous wafer; Determining a second deformation influence factor of the first tool mechanism (200) on the first tool mechanism (200) based on the actual cutting depth of the last wafer collected; determining a second compensation amount of the first tool mechanism (200) based on the second deformation influencing factor; Based on the first compensation amount and the second compensation amount, a comprehensive compensation amount of the first tool mechanism (200) is determined.

8. The wafer processing compensation method according to claim 7, characterized in that: The “determining the second deformation influence factor of the first tool mechanism (200) on the first tool mechanism (200) based on the actual cutting depth of the previous wafer collected” includes: Determining a second displacement Δz of the first tool mechanism (200) in the vertical direction based on an actual cutting depth of a previous wafer; Therefore, the second displacement Δz is the vertical offset of the first tool mechanism (200) caused by the first tool mechanism (200) deforming the beam (130).

9. A wafer processing compensation method according to claim 7 or 8, characterized in that: The “determining the comprehensive compensation amount of the first tool mechanism (200) based on the first compensation amount and the second compensation amount” includes: The comprehensive compensation amount C is: C=C1+C2 Wherein, C1 is the first compensation amount; C2 is the second compensation amount.

10. A wafer processing device, characterized in that: include: A gantry (100), the gantry (100) comprising a first support column (110) and a second support column (120), wherein a crossbeam (130) is connected between the first support column (110) and the second support column (120); a first tool mechanism (200), the first tool mechanism (200) being movably connected to the crossbeam (130), the first tool mechanism (200) having at least a degree of freedom of movement along the crossbeam (130) and a degree of freedom of movement about a vertical direction; a second tool mechanism (300), the second tool mechanism (300) being movably connected to the crossbeam (130), the second tool mechanism (300) having at least a degree of freedom of movement along the crossbeam (130) and a degree of freedom of movement about a vertical direction; as well as A turntable (400) is located below the first tool mechanism (200) and the second tool mechanism (300). The turntable (400) is used to carry a wafer. The turntable (400) has a rotational freedom around an axis so that the turntable (400) drives the wafer to rotate.

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