Substrate support and method for regenerating substrate support

Abstract

The invention provides a substrate support capable of suppressing abnormal discharge and a regeneration method of the substrate support. A substrate support is provided with: a body part having a substrate support surface and a back surface positioned on the opposite side of the substrate support surface, and having through-holes extending from the back surface to the substrate support surface, an upper porous plug, a lower porous plug, and a plurality of fluid particles; the upper side porous plug and the lower side porous plug are arranged in the through hole, at least one of the upper side porous plug and the lower side porous plug is detachable relative to the body part, and the flowing particles are arranged in the through hole and filled between the upper side porous plug and the lower side porous plug. Each of the plurality of flowable particles is (i) formed from a Si-containing material, or (ii) formed from a resin material and a Si-containing coating layer on the resin material.

Description

Technical Field

[0001] The present invention relates to a substrate support and a method for regenerating the substrate support. Background Art

[0002] Patent Document 1 discloses a substrate supporting base including an electrostatic chuck, a cooling base, a gas flow path including a cavity formed between the upper surface of the electrostatic chuck and the bottom surface of the cooling base, and a porous plug provided in the cavity.

[0003]

Prior art literature

[0004] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Publication No. 2022-535508 Summary of the Invention

[0006] [Problems to be solved by the invention]

[0007] In one aspect, the present invention provides a substrate supporter and a method for regenerating the substrate supporter that suppress abnormal discharge.

[0008]

Methods for solving the problem

[0009] In order to solve the above-mentioned problems, according to one embodiment, a substrate support is provided, which includes a main body, an upper porous plug and a lower porous plug, and a plurality of fluid particles, the main body having a substrate supporting surface and a back surface located on the opposite side of the substrate supporting surface, and having a through hole extending from the back surface to the substrate supporting surface, the upper porous plug and the lower porous plug are arranged in the through hole, at least one of the upper porous plug and the lower porous plug is detachable relative to the main body, the plurality of fluid particles are filled in the through hole between the upper porous plug and the lower porous plug, and each of the plurality of fluid particles is (i) formed of a Si-containing material, or (ii) formed of a resin material and a Si-containing coating on the resin material.

[0010] Effects of the Invention

[0011] According to one aspect, a substrate supporter and a method for regenerating the substrate supporter that suppress abnormal discharge can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012]

Figure 1

[0013]

Figure 2

[0014]

Figure 3

[0015]

Figure 4

[0016]

Figure 5A

[0017]

Figure 5B

[0018]

Figure 5C

[0019]

Figure 6A

[0020]

Figure 6B

[0021]

Figure 6C

[0022]

Figure 7A

[0023]

Figure 7B

[0024]

Figure 7C

[0025]

Figure 8

[0026]

Figure 9

[0027] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

[0028] [Plasma treatment system]

[0029] An example configuration of a plasma processing system will be described below. Figure 1 This is an example of a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus 1 .

[0030] The plasma processing system includes a capacitively coupled plasma processing device 1 and a control unit 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing device 1 includes a substrate support unit (substrate support) 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 includes at least one gas supply port for supplying at least one processing gas into the plasma processing space 10s and at least one gas exhaust port for exhausting the gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0031] The substrate support portion 11 includes a support base body 111 and an annular component 112. The support base body 111 has a central area 111a for supporting a substrate W, and an annular area 111b for supporting the annular component 112. A wafer is an example of a substrate W. The annular area 111b of the support base body 111 surrounds the central area 111a of the support base body 111 in a plan view. The substrate W is provided on the central area 111a of the support base body 111, and the annular component 112 is provided on the annular area 111b of the support base body 111 so as to surround the substrate W on the central area 111a of the support base body 111. Therefore, the central area 111a is also referred to as a substrate supporting surface for supporting the substrate W, and the annular area 111b is also referred to as an annular supporting surface for supporting the annular component 112.

[0032] In one embodiment, the support platform body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is provided on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b provided in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a further has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular area 111b. In this case, the annular component 112 may be provided on the annular electrostatic chuck or the annular insulating component, or may be provided on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode connected to the RF (radio frequency) power supply 31 and / or DC (direct current) power supply 32 described later may be provided in the ceramic component 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal described later is provided to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0033] The ring assembly 112 includes one or more ring components. In one embodiment, the one or more ring components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0034] In addition, the substrate support portion 11 may include a temperature control module, which is configured to adjust at least one of the electrostatic suction cup 1111, the annular component 112 and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as salt water or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are provided in the ceramic component 1111a of the electrostatic suction cup 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion 17, which is configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central area 111a. The heat transfer gas supply portion 17 is configured to supply heat transfer gas to the through hole 111h (see Figure 2 , through holes 1110h, 1111h) described later supply heat transfer gas (such as He gas).

[0035] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas inlet ports 13c. In addition, the shower head 13 includes at least one upper electrode. In addition, the gas inlet portion may further include, in addition to the shower head 13, one or more side gas injection portions (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0036] The gas supply unit 20 may include at least one gas zone 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from each corresponding gas zone 21 through each corresponding flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include one or more flow control devices that adjust or pulse the flow of the at least one process gas.

[0037] The power supply 30 includes an RF power supply 31 connected to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a portion of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, allowing ion components in the generated plasma to be introduced into the substrate W.

[0038] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is connected to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0039] The second RF generating unit 31b is configured to be connected to at least one lower electrode through at least one impedance matching circuit to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are provided to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0040] Furthermore, the power supply 30 may include a DC power supply 32 connected to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and generates a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and generates a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0041] In various embodiments, at least one of the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or a combination thereof pulse waveforms. In one embodiment, a waveform generator for generating the voltage pulse sequence from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute the voltage pulse generator. When the second DC generator 32b and the waveform generator constitute the voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses can have either positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within a single cycle. Furthermore, the first and second DC generators 32a and 32b can be provided in addition to the RF power supply 31, or the first DC generator 32a can be provided in place of the second RF generator 31b.

[0042] The exhaust system 40 can be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0043] The control unit 2 processes computer-executable commands that cause the plasma processing device 1 to perform the various processes described in the present invention. The control unit 2 can be configured to control the various components of the plasma processing device 1 in a manner that performs the various processes described herein. In one embodiment, part or all of the control unit 2 can be included in the plasma processing device 1. The control unit 2 includes a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and execute the read program, thereby performing various control actions. The program can be stored in the storage unit 2a2 in advance and can be obtained through a medium when necessary. The obtained program is stored in the storage unit 2a2 and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (central processing unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0044] Here, a through hole 111h is formed on the substrate support portion 11 for supplying a heat transfer gas (e.g., He gas) to the back side of the substrate W. When plasma treatment is applied to the substrate W, the space between the back side of the substrate W and the substrate support surface is filled with the heat transfer gas, and the through hole 111h is also filled with the heat transfer gas. In addition, when plasma treatment is applied to the substrate W in the substrate support portion 11, a potential difference in the vertical direction is generated between the substrate W supported by the substrate support surface and the base 1110 serving as the lower electrode. Due to this potential difference, there is a concern that abnormal discharge may occur in the through hole 111h. Due to the generation of abnormal discharge, there is a concern that the electrostatic chuck 1111 may be consumed, and a discharge mark may be formed on the back side of the substrate W.

[0045] An example of a structure for suppressing abnormal discharge is Figure 2 Provide explanation. Figure 2 This is an example of a cross-sectional view of the support base main body 111 of the substrate support portion 11 according to the first embodiment.

[0046] The support base body 111 includes a base 1110, an electrostatic chuck 1111, and an adhesive layer 1112. A ceramic member (also referred to as a main body in the first embodiment) 1111a of the electrostatic chuck 1111 is fixed to the base (conductive base) 1110 including a conductive member via the adhesive layer 1112.

[0047] The ceramic component 1111a of the electrostatic chuck 1111 has a substrate supporting surface (upper surface) 1111S1 and a back surface (lower surface) 1111S2 opposite to the substrate supporting surface 1111S1. The back surface 1111S2 is bonded to the base 1110 via an adhesive layer 1112. A through hole 1111h is formed in the ceramic component 1111a of the electrostatic chuck 1111, extending from the back surface 1111S2 to the substrate supporting surface 1111S1.

[0048] The base 1110 has an upper surface and a lower surface. The upper surface of the base 1110 is bonded to the ceramic component 1111a via an adhesive layer 1112. The lower surface of the base 1110 is the surface opposite to the upper surface of the base 1110. A through hole 1110h is formed in the base 1110, extending from the lower surface to the upper surface.

[0049] The through holes 111h include a through hole 1110h and a through hole 1111h. The through holes 1110h and the through holes 1111h are formed so that heat transfer gas can flow through each other, for example, coaxially.

[0050] An upper porous plug 210 and a lower porous plug 220 are provided in the through hole 1111 h formed in the ceramic member 1111 a .

[0051] The upper porous plug 210 and the lower porous plug 220 have a structure in which heat transfer gas can flow in the axial direction of the through hole 1111h ( Figure 2 In the example of FIG, the porous structure in which the heat transfer gas flows upward (in the vertical direction). Furthermore, the upper porous plug 210 and the lower porous plug 220 can shorten the electron travel distance (mean free path) in the voltage application direction (vertical direction, vertical direction) in the space where the upper porous plug 210 and the lower porous plug 220 are located. This can suppress abnormal discharge of the heat transfer gas within the upper porous plug 210 and the lower porous plug 220.

[0052] In addition, at least one of the upper porous plug 210 and the lower porous plug 220 is provided to be detachable relative to the ceramic member 1111a. Figure 2 In the example shown, the upper porous plug 210 is fixed to the ceramic component 1111a, while the lower porous plug 220 is removable from the ceramic component 1111a. For example, the ceramic component 1111a has an internal thread 1111t. The lower porous plug 220 is formed in a substantially cylindrical shape, and has an external thread 220t formed on its circumference that screws into the internal thread 1111t. Thus, the lower porous plug 220 is removable from the ceramic component 1111a.

[0053] In addition, if Figure 2In the illustrated example, the lower porous plug 220 is detachable, but the present invention is not limited thereto. The upper porous plug 210 may be detachable relative to the ceramic member 1111a. In addition, both the upper porous plug 210 and the lower porous plug 220 may be detachable relative to the ceramic member 1111a.

[0054] Furthermore, within the through-hole 1111h, a plurality of fluid particles 230 are filled between the upper porous plug 210 and the lower porous plug 220. Here, the plurality of fluid particles 230 are particles that can flow along the shape of the filled space. The through-hole 1111h between the upper porous plug 210 and the lower porous plug 220 is filled with a plurality of fluid particles 230. Heat transfer gas can flow through the gaps between the plurality of fluid particles 230. Furthermore, within the through-hole 1111h filled with the plurality of fluid particles 230, the movement distance (mean free path) of electrons in the voltage application direction (vertical, vertical direction) can be shortened. Thus, abnormal discharge of the heat transfer gas within the through-hole 1111h filled with the plurality of fluid particles 230 can be suppressed.

[0055] Next, regarding another example of a structure for suppressing abnormal discharge, Figure 3 Provide explanation. Figure 3 This is an example of a cross-sectional view of the support base main body 111 of the substrate support portion 11 according to the second embodiment.

[0056] The support base body (also referred to as the main body in the second embodiment) 111 includes a base 1110, an electrostatic chuck 1111, and an adhesive layer 1112. A ceramic component 1111a of the electrostatic chuck 1111 is fixed to the base (conductive base) 1110 including a conductive member via the adhesive layer 1112.

[0057] The support table main body 111 has a substrate supporting surface (upper surface) 111S1 and a back surface (lower surface) 111S2 which is a surface on the opposite side of the substrate supporting surface 111S1 .

[0058] The ceramic component 1111a of the electrostatic chuck 1111 has an upper surface (the substrate supporting surface 111S1 of the support base body 111) and a lower surface. Furthermore, the lower surface of the electrostatic chuck 1111 is bonded to the base 1110 via an adhesive layer 1112. A through hole (upper through hole) 1111h is formed in the ceramic component 1111a of the electrostatic chuck 1111, extending from the lower surface to the upper surface (the substrate supporting surface 111S1 of the support base body 111).

[0059] The base 1110 has an upper surface and a lower surface (the back surface 111S2 of the support base body 111). The upper surface of the base 1110 is bonded to the ceramic component 1111a via an adhesive layer 1112. The base 1110 has a through hole (lower through hole) 1110h extending from the lower surface (the back surface 111S2 of the support base body 111) to the upper surface.

[0060] The through holes 111h include a through hole 1110h and a through hole 1111h. The through holes 1110h and the through holes 1111h are formed so that heat transfer gas can flow through each other, for example, coaxially.

[0061] An upper porous plug 210 and a lower porous plug 220 are disposed within a through-hole 111h formed in the support base body 111. Specifically, the upper porous plug 210 is disposed within the through-hole (upper through-hole) 1111h, and the lower porous plug 220 is disposed within the through-hole (lower through-hole) 1110h.

[0062] The upper porous plug 210 and the lower porous plug 220 have a structure in which heat transfer gas can flow in the axial direction ( Figure 3 In the example of FIG, a porous structure in which electrons flow in the vertical direction (in the vertical direction). Furthermore, the upper porous plug 210 and the lower porous plug 220 can shorten the distance (mean free path) that electrons travel in the voltage application direction (vertical direction, vertical direction) within the space where the upper porous plug 210 and the lower porous plug 220 are located. This can suppress abnormal discharge of the heat transfer gas within the upper porous plug 210 and the lower porous plug 220.

[0063] In addition, at least one of the upper porous plug 210 and the lower porous plug 220 is configured to be detachable relative to the support table body 111. Figure 3 In the illustrated example, the upper porous plug 210 is fixed to the ceramic member 1111a, while the lower porous plug 220 is removable from the base 1110. For example, the base 1110 has an internal thread 1110t. The lower porous plug 220 is formed in a substantially cylindrical shape, and has an external thread 220t formed on its circumference that screws into the internal thread 1011t. Thus, the lower porous plug 220 is removable from the base 1110.

[0064] In addition, if Figure 3 In the illustrated example, the lower porous plug 220 is detachable. However, the present invention is not limited thereto. The upper porous plug 210 may be detachable relative to the ceramic member 1111a. Furthermore, both the upper porous plug 210 and the lower porous plug 220 may be detachable relative to the support base body 111 (ceramic member 1111a, base 1110).

[0065] Furthermore, within the through-hole 111h, a plurality of fluid particles 230 are filled between the upper porous plug 210 and the lower porous plug 220. Here, the plurality of fluid particles 230 are particles that can flow along the shape of the filled space. The through-hole 111h between the upper porous plug 210 and the lower porous plug 220 is filled with a plurality of fluid particles 230. Heat transfer gas can flow through the gaps between the plurality of fluid particles 230. Furthermore, within the through-hole 111h filled with the plurality of fluid particles 230, the travel distance (mean free path) of electrons in the voltage application direction (vertical, vertical direction) can be shortened. Thus, abnormal discharge of the heat transfer gas within the through-hole 111h filled with the plurality of fluid particles 230 can be suppressed.

[0066] Figure 4 This is an example of a cross-sectional view of the support base main body 111 of the substrate support portion 11 according to the second embodiment during heat input.

[0067] The through hole 111h passes through the interface between the lower surface of the ceramic component 1111a and the upper surface of the base 1110. During plasma processing, a deviation occurs in the interface due to the thermal expansion difference between the ceramic component 1111a and the base 1110. As a result, a deviation occurs between the position of the axis of the through hole 1110h and the position of the axis of the through hole 1111h, and the shape of the through hole 111h is deformed. In response to this, in the support base body 111 of the substrate support portion 11 involved in the second embodiment, the plurality of fluid particles 230 filled in the through hole 111h can follow the deformation of the shape of the through hole 111h. As a result, when the shape of the through hole 111h is deformed due to heat input, heat transfer gas can flow, and abnormal discharge can be suppressed.

[0068] Next, the support base main body 111 of the substrate support portion 11 according to the first embodiment will be further described (see Figure 2 ) and the support base body 111 of the substrate support portion 11 according to the second embodiment (see Figure 3 、 4 ) in the fluid particles 230. Figures 5A to 5C This is a schematic diagram showing an example of fluid particles 230 , 230A, and 230B.

[0069] like Figure 5A As shown, the fluid particles 230 may be particles formed of a dense (solid, bulk, non-porous) material.

[0070] For example, the fluid particles 230 may be particles formed of a material containing Si. Specifically, the fluid particles 230 may be particles formed of Si as the material containing Si.

[0071] Furthermore, the fluid particles 230 may be particles formed of SiO 2 as a Si-containing material. For example, in a process of etching Si on a substrate W, SiO 2 may be used as the fluid particles 230 , thereby suppressing consumption of the fluid particles 230 .

[0072] In addition, the fluid particles 230 may use SiC, Poly-Si, or the like as a Si-containing material.

[0073] In addition, the material of the fluid particles 230 can include ceramic materials (such as Al 2 O 3 ), metals (such as Al 2 O 3 ), and resin materials (such as polytetrafluoroethylene (PTFE)).

[0074] like Figure 5B As shown, the fluid particle 230A may be a particle including an inner particle 231A and a protective film 232A coated on the surface of the inner particle 231A.

[0075] The material of the internal particles 231A can be a resin material. As the resin material of the internal particles 231A, for example, polytetrafluoroethylene (PTFE) can be used. In addition, as the protective film 232A, a Si-containing coating can be used. In addition, as the material of the Si-containing film, SiC can be used. Thus, the dielectric constant and / or thermal expansion coefficient of the fluid particles 230A are adjusted by the material of the internal particles 231A, and the internal particles 231A are coated with the protective film 232A having free radical resistance, thereby suppressing the consumption of the fluid particles 230A. In one embodiment, the plurality of fluid particles 230 are each (i) a fluid particle 230 formed of a Si-containing material, or (ii) a fluid particle 230A formed of a resin material 231A and a Si-containing coating 232A on the resin material 231A. In one embodiment, the plurality of flowable particles 230 include (i) at least one flowable particle 230 formed of a Si-containing material, and (ii) at least one flowable particle 230A formed of a resin material 231A and a Si-containing coating layer 232A on the resin material 231A.

[0076] like Figure 5CAs shown, the fluidity particles 230C can be particles formed of a porous material (porous material). This can suppress the mean free path and improve the conductivity of the gas flow path. In one embodiment, the plurality of fluidity particles 230 are each (i) fluidity particles 230 formed of a Si-containing material, (ii) fluidity particles 230A formed of a resin material 231A and a Si-containing coating 232A on the resin material 231A, or (iii) fluidity particles 230C formed of a porous material. In one embodiment, the plurality of fluidity particles 230 include (i) fluidity particles 230 formed of a Si-containing material, (ii) fluidity particles 230A formed of a resin material 231A and a Si-containing coating 232A on the resin material 231A, and (iii) fluidity particles 230C formed of a porous material.

[0077] Next, the particle size of the fluid particles 230 (230A, 230B) will be described. Here, the upper porous plug 210 has a first maximum pore diameter. Furthermore, the lower porous plug 220 has a second maximum pore diameter. The fluid particles 230 (230A, 230B) have a particle size larger than both the first and second maximum pore diameters. This relationship prevents the fluid particles 230 filling the space enclosed by the upper and lower porous plugs 210, 220 from flowing out.

[0078] Next, regarding the method for regenerating the substrate support portion 11, Figures 6A to 6C Provide explanation. Figures 6A to 6C FIG. 1 is an example of a cross-sectional view of the electrostatic chuck 1111 in each step of the regeneration process of the substrate support portion 11. Here, the upper porous plug 210, the lower porous plug 220 and the fluid particles 230 are used as shown in FIG. Figure 2 The following description will take the case where the structure shown is set as an example.

[0079] Figure 6A The used electrostatic chuck 1111 of the substrate support 11 is shown. In the used electrostatic chuck 1111, a plurality of used liquid particles 230C are filled in the through-hole 1111h between the upper porous plug 210 and the lower porous plug 220. The used liquid particles 230C may be consumed by, for example, plasma.

[0080] First, the process of removing the detachable porous plug (at least one of the upper porous plug 210 and the lower porous plug 220) from the ceramic member 1111a is performed. Figure 6B As shown, the removable lower porous plug 220 is removed from the ceramic component 1111a.

[0081] Next, the process of removing the used fluid particles 230C from the through-holes 1111h is performed. Figure 6B As shown, a plurality of used fluid particles 230C are removed from the through-holes 1111h. In addition, by applying ultrasonic vibration to the ceramic member 1111a, the discharge of the used fluid particles 230C can be promoted.

[0082] Next, the through-holes 1111h are filled with unused liquid particles 230. A plurality of unused liquid particles 230 are filled into the through-holes 1111h. Furthermore, ultrasonic vibrations can be applied to the ceramic component 1111a while filling the liquid particles 230. This allows the liquid particles 230 to be densely packed. For example, if the liquid particles 230 are spherical, the liquid particles 230 can be filled into the through-holes 1111h while ultrasonic vibrations are applied. This allows the liquid particles 230 to be arranged, for example, in a hexagonal close-packed structure within the through-holes 1111h.

[0083] Next, the removed porous plug (at least one of the upper porous plug 210 and the lower porous plug 220) is mounted on the ceramic member 1111a. Figure 6C As shown, the substrate support portion 11 can be regenerated by replacing the fluid particles 230 .

[0084] In addition, if Figure 3 In the illustrated structure, even when the upper porous plug 210 , the lower porous plug 220 , and the fluid particles 230 are provided, the substrate support portion 11 can be similarly regenerated.

[0085] Furthermore, the detachable porous plug is described using the lower porous plug 220 as an example, but is not limited thereto and may also be the upper porous plug 210. In this case, the fluid particles 230 can be replaced without removing the electrostatic chuck 1111, which is bonded to the base 1110 via the adhesive layer 1112. Alternatively, a configuration can be employed in which, when used fluid particles 230C are removed, gas is supplied from below to suction the used fluid particles 230C discharged from the through-holes 1111h. In this case, the fluid particles 230 can be replaced without removing the base 1110 from the plasma processing chamber 10.

[0086] Furthermore, by making the lower porous plug 220 detachable, it is possible to suppress the adhesion of used fluid particles 230C and unused fluid particles 230 to the substrate mounting surface.

[0087] Figures 7A to 7C This is an example of a cross-sectional view of the support base body 111 of the substrate support portion 11 according to another embodiment. Figure 2 The case where the structure shown is set up is described as an example. In addition, the base 1110 is omitted from the illustration.

[0088] Figure 7A An example of filling with fluidity particles 240 of different particle sizes (the particle size of fluidity particles 240 is less than the particle size of fluidity particles 230) is given in FIG. Figure 7A As shown, by filling the fluidity particles 240 with a smaller particle size than the fluidity particles 230, the gaps between the particles can be changed. In other words, the conductivity of the heat transfer gas can be changed.

[0089] Figure 7B In the embodiment, a plurality of fluidity particles 230 having a first particle size (first fluidity particles) and a plurality of fluidity particles 240 having a second particle size smaller than the first particle size (second fluidity particles) are filled into the through-hole 1111h. In this manner, fluidity particles 230 and 240 having different particle sizes can be filled into the through-hole 1111h.

[0090] For example, it is preferable that the first particle size be within the range of 100 μm to 200 μm, and the second particle size be less than 30 μm. Thus, the fluid particles 240 having the second particle size are filled between the fluid particles 230 having the first particle size, further shortening the mean free path and suppressing the occurrence of abnormal discharge.

[0091] In addition, the fluid particles 230 and the fluid particles 240 may be formed of the same material. In addition, the fluid particles 230 and the fluid particles 240 may also be formed of different materials.

[0092] Figure 7C In the embodiment, the through hole 1111h is curved in the ceramic member 1111a. The fluid particles 230 can be suitably filled in the through hole 1111h having such a shape.

[0093] As described above, in the through holes 111h and 1111h through which the heat transfer gas flows, the plurality of fluid particles 230 are filled between the upper porous plug 210 and the lower porous plug 220. This structure ensures that the mean free path is reduced.

[0094] In addition, if Figure 7C As shown in one example, the fluid particles 230 may be filled in accordance with the shape of the through holes 111h and 1111h. In other words, the shape of the through holes 111h and 1111h may be freely selected.

[0095] Furthermore, as shown in FIG. 5 , the degree of freedom in selecting the material of the fluid particles 230 ( 230A, 230B) can be increased.

[0096] In addition, as shown in FIG. 6 , the fluid particles 230 can be replaced to regenerate the substrate support portion 11 .

[0097] In addition, if Figure 7A and Figure 7BAs shown in one example, by controlling the particle size of the fluid particles 230 and 240, the conductivity of the heat transfer gas can be controlled.

[0098] Furthermore, the structure in which a plurality of fluid particles are filled between an upper porous plug and a lower porous plug in a gas flow path through which gas flows can also be applied to other structures.

[0099] Figure 8 1 is an example of a cross-sectional view showing a structure between the lower electrode of the plasma processing apparatus 1 and the plasma processing chamber 10 .

[0100] A conductive member 1113 formed of a conductive material and a member 1114 formed of an insulating material are provided below the base 1110 functioning as a lower electrode.

[0101] A flow path forming member 300 forming a heat transfer gas flow path is provided between the plasma processing chamber 10 and the conductive member 1113. The flow path forming member 300 is a substantially cylindrical member formed of an insulating material and has a through hole 300h therein.

[0102] Here, plasma processing chamber 10 is grounded. Meanwhile, at least one of a source RF signal, a bias RF signal, and a DC signal is supplied to base 1110, which functions as a lower electrode, and conductive member 1113. This creates a potential difference ΔV between plasma processing chamber 10 and conductive member 1113. This potential difference may cause abnormal discharge within through-hole 300h.

[0103] To this end, the flow path forming member 300 includes an upper porous plug 310 and a lower porous plug 320 disposed within the through-hole 300h, and a plurality of fluid particles 330 filled between the upper porous plug 310 and the lower porous plug 320 within the through-hole 300h. Furthermore, at least one of the upper porous plug 310 and the lower porous plug 320 is detachable from the flow path forming member 300. This structure can suppress abnormal discharge.

[0104] The upper porous plug 310 , the lower porous plug 320 , and the fluid particles 330 are the same as the upper porous plug 210 , the lower porous plug 220 , and the fluid particles 230 ( 230A, 230B, 240 ), and thus redundant descriptions are omitted.

[0105] Figure 9 1 is an example of a cross-sectional view showing a structure between an upper electrode of plasma processing apparatus 1 and plasma processing chamber 10 .

[0106] The shower head 13 serving as an upper electrode includes a cooling plate 131 and an electrode plate 132 formed of a conductive member. The cooling plate 131 and the electrode plate 132 are supported by the plasma processing chamber 10 via an insulating member 133 .

[0107] A flow path forming member 400 forming a process gas flow path is provided between the plasma processing chamber 10 and the cooling plate 131. The flow path forming member 400 is a substantially cylindrical member formed of an insulating material and has a through hole 400h therein.

[0108] Here, plasma processing chamber 10 is grounded. Meanwhile, at least one of a source RF signal, a bias RF signal, and a DC signal is supplied to cooling plate 131 and electrode plate 132, which function as upper electrodes. This creates a potential difference ΔV between plasma processing chamber 10 and cooling plate 131. This potential difference may cause abnormal discharge within through-hole 400h.

[0109] To this end, the flow path forming member 400 includes an upper porous plug 410 and a lower porous plug 420 disposed within the through-hole 400h, and a plurality of fluid particles 430 filled between the upper porous plug 410 and the lower porous plug 420 within the through-hole 400h. Furthermore, at least one of the upper porous plug 410 and the lower porous plug 420 is detachable from the flow path forming member 400. This structure can suppress abnormal discharge.

[0110] The upper porous plug 410 , the lower porous plug 420 , and the fluid particles 430 are the same as the upper porous plug 210 , the lower porous plug 220 , and the fluid particles 230 ( 230A, 230B, 240 ), and thus redundant descriptions are omitted.

[0111] The embodiments disclosed above include, for example, the following aspects.

[0112] (Note 1)

[0113] A substrate support comprising:

[0114] a main body having a substrate supporting surface and a back surface opposite to the substrate supporting surface, and having a through hole extending from the back surface to the substrate supporting surface;

[0115] an upper porous plug and a lower porous plug disposed in the through hole, at least one of the upper porous plug and the lower porous plug being detachable relative to the main body; and

[0116] A plurality of fluid particles are filled in the through hole between the upper porous plug and the lower porous plug,

[0117] Each of the plurality of flowable particles is (i) formed of a Si-containing material, or (ii) formed of a resin material and a Si-containing coating layer on the resin material.

[0118] (Note 2)

[0119] The substrate support according to Supplementary Note 1, wherein the main body is formed of a ceramic material.

[0120] (Note 3)

[0121] According to the substrate support device of Supplementary Note 1, the main body includes a conductive base and a ceramic component provided above the conductive base,

[0122] The through hole includes an upper through hole formed in the ceramic member and a lower through hole formed in the conductive base.

[0123] The upper porous plug is arranged in the upper through hole.

[0124] The lower porous plug is disposed in the lower through hole.

[0125] (Note 4)

[0126] According to any one of Supplementary Notes 1 to 3, the substrate supporter, the Si-containing material comprises Si or SiO 2 .

[0127] (Note 5)

[0128] The substrate support according to any one of Supplementary Notes 1 to 3, wherein the Si-containing coating layer comprises SiC.

[0129] (Note 6)

[0130] The substrate support according to Supplementary Note 5, wherein the resin material includes polytetrafluoroethylene.

[0131] (Note 7)

[0132] The substrate support according to any one of Supplementary Notes 1 to 6, wherein the upper porous plug has a first maximum pore diameter.

[0133] The lower porous plug has a second maximum pore diameter,

[0134] Each of the plurality of fluid particles has a particle size larger than the first maximum pore size and the second maximum pore size.

[0135] (Note 8)

[0136] According to the substrate support according to Supplementary Note 7, the plurality of fluid particles include:

[0137] a plurality of first fluidity particles having a first particle size, and

[0138] A plurality of second fluidity particles having a second particle size smaller than the first particle size.

[0139] (Note 9)

[0140] According to the substrate support according to Supplementary Note 8, the first particle size is within a range of 100 μm to 200 μm.

[0141] The second particle size is less than 30 μm.

[0142] (Note 10)

[0143] The substrate support according to Supplementary Note 8 or Supplementary Note 9, wherein the first fluidity particles and the second fluidity particles are formed of the same material.

[0144] (Note 11)

[0145] The substrate support according to Supplementary Note 8 or Supplementary Note 9, wherein the first fluidity particles and the second fluidity particles are formed of different materials.

[0146] (Note 12)

[0147] A substrate support comprising:

[0148] a main body having a substrate supporting surface and a back surface opposite to the substrate supporting surface, and having a through hole extending from the back surface to the substrate supporting surface;

[0149] an upper porous plug and a lower porous plug disposed in the through hole, at least one of the upper porous plug and the lower porous plug being detachable relative to the main body, the upper porous plug having a first maximum pore diameter, and the lower porous plug having a second maximum pore diameter; and

[0150] A plurality of fluid particles are filled in the through hole between the upper porous plug and the lower porous plug,

[0151] The plurality of fluid particles have:

[0152] a plurality of first fluid particles having a first particle size larger than the first maximum pore size and the second maximum pore size, and

[0153] A plurality of second fluid particles have a second particle size that is larger than the first maximum pore size and the second maximum pore size and smaller than the first particle size.

[0154] (Note 13)

[0155] The substrate support according to Supplementary Note 12, wherein the main body is formed of a ceramic material.

[0156] (Note 14)

[0157] According to the substrate support device of Supplementary Note 12, the main body includes a conductive base and a ceramic component provided above the conductive base,

[0158] The through hole includes an upper through hole formed in the ceramic member and a lower through hole formed in the conductive base.

[0159] The upper porous plug is arranged in the upper through hole.

[0160] The lower porous plug is disposed in the lower through hole.

[0161] (Note 15)

[0162] The substrate support according to any one of Supplementary Notes 12 to 14, wherein the first particle size is within a range of 100 μm to 200 μm.

[0163] The second particle size is less than 30 μm.

[0164] (Note 16)

[0165] The substrate support according to any one of Supplementary Notes 12 to 15, wherein the first fluidity particles and the second fluidity particles are formed of the same material.

[0166] (Note 17)

[0167] The substrate support according to any one of Supplementary Notes 12 to 15, wherein the first fluidity particles and the second fluidity particles are formed of different materials.

[0168] (Note 18)

[0169] A method for regenerating a substrate support, wherein:

[0170] The substrate support comprises:

[0171] a main body having a substrate supporting surface and a back surface opposite to the substrate supporting surface, and having a through hole extending from the back surface to the substrate supporting surface;

[0172] an upper porous plug and a lower porous plug, which are disposed in the through hole, and at least one of the upper porous plug and the lower porous plug is detachable relative to the main body.

[0173] A plurality of fluid particles are filled in the through hole between the upper porous plug and the lower porous plug,

[0174] The regeneration method comprises:

[0175] a step of removing at least one of the detachable upper porous plug and the lower porous plug from the main body;

[0176] The process of removing the plurality of used flowable particles from the through-holes,

[0177] The step of filling the through-holes with a plurality of unused fluid particles,

[0178] and mounting at least one of the removed upper porous plug and the removed lower porous plug on the main body.

[0179] (Note 19)

[0180] According to the substrate support regeneration method described in Appendix 18, the process of removing the plurality of used fluid particles from the through-holes and / or the process of filling the plurality of unused fluid particles into the through-holes is performed while applying ultrasonic vibration to the main body.

[0181] In addition, the structures and the like listed in the above embodiments and the combinations with other elements described here are not intended to limit the present invention. These points can be changed within the scope of the present invention and can be appropriately selected according to the application form.

[0182] In addition, this application claims priority based on Japanese Patent Application No. 2023-20288, filed on February 13, 2023, the entire contents of which are incorporated herein by reference.

[0183] Reference numerals

[0184] W substrate

[0185] 1 Plasma treatment device

[0186] 2 Control Unit

[0187] 10 Plasma processing chamber

[0188] 11. Substrate support part (substrate support)

[0189] 17 Heat transfer gas supply unit

[0190] 111 Support platform main body (main body)

[0191] 111h through hole

[0192] 111S1 substrate support surface

[0193] 111S2 back

[0194] 1110 abutment

[0195] 1110h Through hole (lower through hole)

[0196] 1110t internal thread

[0197] 1111 Electrostatic Chuck

[0198] 1111a Ceramic component (main body)

[0199] 1111h Through hole (upper through hole)

[0200] 1111S1 substrate support surface

[0201] 1111S2 back

[0202] 1111t internal thread

[0203] 220t external thread

[0204] 210 Upper porous plug

[0205] 220 lower porous plug

[0206] 230, 230A, 230B, 240 flowable particles

Claims

1. A substrate support comprising: a main body having a substrate supporting surface and a back surface opposite to the substrate supporting surface, and having a through hole extending from the back surface to the substrate supporting surface; an upper porous plug and a lower porous plug disposed in the through hole, at least one of the upper porous plug and the lower porous plug being detachable relative to the main body; and A plurality of fluid particles are filled in the through hole between the upper porous plug and the lower porous plug, Each of the plurality of flowable particles is (i) formed of a Si-containing material, or (ii) formed of a resin material and a Si-containing coating layer on the resin material. 2 . The substrate supporter according to claim 1 , wherein the body portion is formed of a ceramic material.

3. The substrate support according to claim 1, wherein the main body comprises a conductive base and a ceramic component provided above the conductive base. The through hole includes an upper through hole formed in the ceramic member and a lower through hole formed in the conductive base. The upper porous plug is arranged in the upper through hole. The lower porous plug is disposed in the lower through hole. 4 . The substrate support according to claim 1 , wherein the Si-containing material comprises Si or SiO 2 .

5. The substrate support according to any one of claims 1 to 3, wherein the Si-containing coating comprises SiC. The substrate supporter according to claim 5 , wherein the resin material comprises polytetrafluoroethylene.

7. The substrate support according to any one of claims 1 to 3, wherein the upper porous plug has a first maximum pore diameter. The lower porous plug has a second maximum pore diameter, Each of the plurality of fluid particles has a particle size larger than the first maximum pore size and the second maximum pore size.

8. The substrate support according to claim 7, wherein the plurality of fluid particles comprises: a plurality of first fluidity particles having a first particle size, and A plurality of second fluidity particles having a second particle size smaller than the first particle size.

9. The substrate support according to claim 8, wherein the first particle size is in the range of 100 μm to 200 μm. The second particle size is less than 30 μm. 10 . The substrate support according to claim 8 , wherein the first fluid particles and the second fluid particles are formed of the same material. The substrate support according to claim 8 , wherein the first fluid particles and the second fluid particles are formed of different materials.

12. A substrate support comprising: a main body having a substrate supporting surface and a back surface opposite to the substrate supporting surface, and having a through hole extending from the back surface to the substrate supporting surface; an upper porous plug and a lower porous plug disposed in the through hole, at least one of the upper porous plug and the lower porous plug being detachable relative to the main body, the upper porous plug having a first maximum pore diameter, and the lower porous plug having a second maximum pore diameter; and A plurality of fluid particles are filled in the through hole between the upper porous plug and the lower porous plug, The plurality of fluid particles have: a plurality of first fluid particles having a first particle size larger than the first maximum pore size and the second maximum pore size, and A plurality of second fluid particles have a second particle size that is larger than the first maximum pore size and the second maximum pore size and smaller than the first particle size. The substrate supporter according to claim 12 , wherein the body portion is formed of a ceramic material.

14. The substrate support according to claim 12, wherein the main body comprises a conductive base and a ceramic component provided above the conductive base. The through hole includes an upper through hole formed in the ceramic member and a lower through hole formed in the conductive base. The upper porous plug is arranged in the upper through hole. The lower porous plug is disposed in the lower through hole.

15. The substrate support according to any one of claims 12 to 14, wherein the first particle size is in the range of 100 μm to 200 μm. The second particle size is less than 30 μm. The substrate support according to claim 15 , wherein the first fluid particles and the second fluid particles are formed of the same material. The substrate support according to claim 15 , wherein the first fluid particles and the second fluid particles are formed of different materials.

18. A method for regenerating a substrate support, wherein: The substrate support comprises: a main body having a substrate supporting surface and a back surface opposite to the substrate supporting surface, and having a through hole extending from the back surface to the substrate supporting surface; an upper porous plug and a lower porous plug disposed in the through hole, at least one of the upper porous plug and the lower porous plug being detachable relative to the main body; and A plurality of fluid particles are filled in the through hole between the upper porous plug and the lower porous plug, The regeneration method comprises: a step of removing at least one of the detachable upper porous plug and the lower porous plug from the main body; a step of removing the plurality of used fluid particles from the through-holes, a step of filling the through-holes with a plurality of unused fluid particles, and and mounting at least one of the removed upper porous plug and the removed lower porous plug on the main body.

19. The substrate support regeneration method according to claim 18, further comprising the step of removing the plurality of used fluid particles from the through-holes and / or the step of filling the plurality of unused fluid particles into the through-holes while applying ultrasonic vibration to the main body.

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