Electrostatic discharge protection circuit and electronic device

Abstract

The present disclosure provides an electrostatic discharge protection circuit and an electronic device. The electrostatic discharge protection circuit comprises: a current discharge transistor; the current discharge transistor is connected between a first node and a second node; wherein the current discharge transistor is used to discharge an electrostatic pulse between the first node and the second node in a conducting state; a driving module; the driving module comprises a driving transistor, and the driving transistor is used to generate a saturation current based on the electrostatic pulse; a voltage generation module; the voltage generation module is used to generate a driving voltage signal based on the saturation current to drive the current discharge transistor to conduct.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronics, and in particular to an electrostatic discharge protection circuit and an electronic device. BACKGROUND

[0002] Electrostatic discharge (ESD) is the main factor causing most electronic components to be damaged by excessive electrical stress. For example, gallium nitride high electron mobility transistors (GaN HEMTs) are more susceptible to ESD damage due to their device structure, so ESD protection circuits are generally required.

[0003] Therefore, how to provide ESD protection for electronic components is a problem to be solved. SUMMARY

[0004] In view of this, the present application provides an electrostatic discharge protection circuit and an electronic device.

[0005] According to a first aspect of the present application, an electrostatic discharge protection circuit is provided, comprising:

[0006] a current discharge transistor, connected between a first node and a second node, wherein the current discharge transistor is configured to discharge an electrostatic pulse between the first node and the second node in a conducting state;

[0007] a driving module, comprising a driving transistor, wherein the driving transistor is configured to generate a saturation current based on the electrostatic pulse;

[0008] a voltage generation module, configured to generate a driving voltage signal based on the saturation current to drive the current discharge transistor to conduct.

[0009] In some embodiments, the voltage generation module comprises a first resistor, and the driving module further comprises a second resistor corresponding to the driving transistor, wherein:

[0010] a first end of the second resistor, a first end of the driving transistor, and the first node are connected;

[0011] a second end of the second resistor and a control end of the driving transistor are connected;

[0012] a first end of the first resistor, a second end of the driving transistor, and a control end of the current discharge transistor are connected as a third node;

[0013] a second end of the first resistor and the second node are connected;

[0014] The first terminal of the current discharge transistor is connected to the first node, and the second terminal of the control terminal of the current discharge transistor is connected to the second node;

[0015] The driving transistor is used to generate the saturation current at the first and second terminals of the driving transistor based on the electrostatic pulse on the first node.

[0016] The first resistor is used to generate a drive voltage signal at the first end of the first resistor based on the saturation current, which drives the current discharge transistor to turn on, so as to discharge the electrostatic pulse on the first node to the second node.

[0017] In some embodiments, the electrostatic discharge protection circuit further includes at least one voltage divider unit, wherein the voltage divider unit is configured in at least one of the following:

[0018] Between the first node and the first terminal of the driving transistor;

[0019] Between the second terminal of the driving transistor and the third node;

[0020] Between the third node and the control terminal of the current discharge transistor;

[0021] The first resistor is connected in series between the third node and the second node.

[0022] In some embodiments, the voltage divider unit includes at least one of a diode sequence and a third resistor;

[0023] The diode sequence includes at least one diode connected in series in the same direction, wherein...

[0024] The anode of the diode sequence is connected to the first node, and the cathode of the diode sequence is connected to the first terminal of the driving transistor; and / or

[0025] The anode of the diode sequence is connected to the second terminal of the driving transistor, and the cathode of the diode sequence is connected to the third node; and / or

[0026] The anode of the diode sequence is connected to the third node, and the cathode of the diode sequence is connected to the control terminal of the current discharge transistor; and / or

[0027] The anode of the diode sequence is connected to the second end of the first resistor, and the cathode of the diode sequence is connected to the third node.

[0028] In some embodiments, the driving module includes: a transistor sequence comprising N driving transistors, and a second resistor corresponding to each driving transistor; wherein,

[0029] The N driving transistors are connected in series, with the first end of the driving transistor at one end of the transistor sequence connected to the first node, and the second end of the driving transistor at the other end of the transistor sequence connected to the third node.

[0030] The first end of each second resistor is connected to the first node; the second end of each second resistor is connected to the control terminal of the corresponding driving transistor.

[0031] In some embodiments, the driving module includes a first driving module and a second driving module, and the voltage generation module includes a first voltage generation module and a second voltage generation module; wherein...

[0032] The first driving module includes a first driving transistor, which is used to generate a first saturation current based on a first electrostatic pulse on the first node;

[0033] The first voltage generation module is used to generate a first driving voltage signal based on the first saturation current to drive the current discharge transistor to turn on;

[0034] The second driving module includes a second driving transistor, which is used to generate a second saturation current based on a second electrostatic pulse on the second node;

[0035] The second voltage generation module is used to generate a second driving voltage signal based on the second saturation current to drive the current discharge transistor to turn on.

[0036] In some embodiments, the first driving module further includes a fourth resistor corresponding to the first driving transistor, and the first voltage generation module includes a fifth resistor and a first diode, wherein...

[0037] The first end of the fourth resistor, the first end of the first driving transistor, and the first node are connected;

[0038] The second terminal of the fourth resistor is connected to the control terminal of the first driving transistor;

[0039] The first terminal of the fifth resistor, the second terminal of the first driving transistor, and the control terminal of the current discharge transistor are connected;

[0040] The second end of the fifth resistor is connected to the anode of the first diode, and the cathode of the first diode is connected to the second node;

[0041] The second driving module further includes a sixth resistor corresponding to the second driving transistor, and the second voltage generation module includes a seventh resistor and a second diode, wherein,

[0042] The second end of the sixth resistor, the first end of the second driving transistor, and the second node are connected;

[0043] The first terminal of the sixth resistor is connected to the control terminal of the second driving transistor;

[0044] The second terminal of the seventh resistor, the second terminal of the second driving transistor, and the control terminal of the current discharge transistor are connected;

[0045] The first end of the seventh resistor is connected to the anode of the second diode, and the cathode of the second diode is connected to the first node.

[0046] In some embodiments, the first driving module further includes a fourth resistor corresponding to the first driving transistor, and the first voltage generation module includes a fifth resistor, a seventh resistor, and a first diode, wherein...

[0047] The first end of the fourth resistor, the first end of the first driving transistor, and the first node are connected;

[0048] The second terminal of the fourth resistor is connected to the control terminal of the first driving transistor;

[0049] The first end of the seventh resistor is connected to the second end of the first driving transistor;

[0050] The second end of the seventh resistor, the first end of the fifth resistor, and the control terminal of the current discharge transistor are connected;

[0051] The second end of the fifth resistor is connected to the anode of the first diode, and the cathode of the first diode is connected to the second node;

[0052] The second driving module further includes a sixth resistor corresponding to the second driving transistor, and the second voltage generation module includes the fifth resistor, the seventh resistor, and the second diode, wherein,

[0053] The second end of the sixth resistor, the first end of the second driving transistor, and the second node are connected;

[0054] The first terminal of the sixth resistor is connected to the control terminal of the second driving transistor;

[0055] The second end of the fifth resistor is connected to the second end of the second driving transistor;

[0056] The first end of the seventh resistor is connected to the anode of the second diode, and the cathode of the second diode is connected to the first node.

[0057] In some embodiments, the first diode has a plurality of first diodes connected in series;

[0058] The second diode has multiple diodes, which are connected in series.

[0059] In some embodiments, the current discharge transistor includes a bidirectional conduction transistor.

[0060] According to a second aspect of the present disclosure, an electronic device is provided, the electronic device comprising the electrostatic discharge protection circuit described in the first aspect.

[0061] According to an embodiment of this disclosure, an electrostatic discharge (ESD) protection circuit and electronic device are disclosed. The ESD protection circuit includes: a current discharge transistor connected between a first node and a second node; wherein the current discharge transistor is used to discharge electrostatic pulses between the first node and the second node in a conducting state; a driving module including a driving transistor for generating a saturation current based on the electrostatic pulse; and a voltage generation module for generating a driving voltage signal based on the saturation current to drive the current discharge transistor to conduct. Thus, by generating a relatively stable saturation current based on the electrostatic pulse through the driving module, and generating a stable driving voltage signal through the voltage generation module to control the conduction of the current discharge transistor, electrostatic discharge can be achieved. Furthermore, the relatively stable driving voltage signal improves the reliability of the current discharge transistor control, thereby enhancing the reliability and stability of the ESD protection circuit control. Attached Figure Description

[0062] Figure 1 This is one of the schematic diagrams of an electrostatic discharge protection circuit structure according to an embodiment;

[0063] Figure 2 This is a second schematic diagram of an electrostatic discharge protection circuit structure according to an embodiment;

[0064] Figure 3 This is a schematic diagram of an electrostatic discharge protection circuit structure shown in one embodiment;

[0065] Figure 4 This is a schematic diagram of a diode sequence structure according to one embodiment;

[0066] Figure 5 This is the fourth schematic diagram of an electrostatic discharge protection circuit structure according to an embodiment;

[0067] Figure 6 This is the fifth schematic diagram of an electrostatic discharge protection circuit structure shown in one embodiment;

[0068] Figure 7 This is a schematic diagram of an electrostatic discharge protection circuit structure shown in one embodiment;

[0069] Figure 8 This is the seventh schematic diagram of an electrostatic discharge protection circuit structure according to an embodiment;

[0070] Figure 9 This is the eighth schematic diagram of an electrostatic discharge protection circuit structure according to an embodiment;

[0071] Figure 10 This is the ninth schematic diagram of an electrostatic discharge protection circuit structure according to an embodiment;

[0072] Figure 11 This is a schematic diagram of an electrostatic discharge protection circuit structure shown in one embodiment;

[0073] Figure 12 This is a schematic diagram of the architecture of an electronic device according to an exemplary embodiment. Detailed Implementation

[0074] To make the technical solution and beneficial effects of the present invention more apparent and understandable, a detailed description is provided below by listing specific embodiments. The accompanying drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application pertains.

[0075] This disclosure is not exhaustive, but merely illustrative of some embodiments, and is not intended to limit the scope of protection of this disclosure. Unless otherwise specified, each step in a particular embodiment can be implemented as an independent embodiment, and the steps can be arbitrarily combined. For example, a solution after removing some steps in a particular embodiment can also be implemented as an independent embodiment, and the order of the steps in a particular embodiment can be arbitrarily interchanged. Furthermore, the optional implementation methods in a particular embodiment can be arbitrarily combined; moreover, the embodiments can be arbitrarily combined, for example, some or all steps of different embodiments can be arbitrarily combined, and a particular embodiment can be arbitrarily combined with the optional implementation methods of other embodiments.

[0076] In each of the disclosed embodiments, unless otherwise specified or in case of logical conflict, the terminology and / or descriptions of the embodiments are consistent and can be referenced by each other. Technical features in different embodiments can be combined to form new embodiments based on their inherent logical relationships.

[0077] The terminology used in the embodiments of this disclosure is for the purpose of describing particular embodiments only and is not intended to limit the scope of this disclosure.

[0078] In this disclosure, unless otherwise stated, elements expressed in the singular form, such as "a," "an," "the," "the," "the," "the," "the," "the," "this," etc., can mean "one and only one," or "one or more," "at least one," etc. For example, when using articles such as "a," "an," "the," etc. in translation, the noun following the article can be understood as either a singular or a plural expression.

[0079] In the embodiments disclosed herein, "multiple" refers to two or more.

[0080] In some embodiments, the terms “at least one of”, “one or more”, “a plurality of”, “multiple”, etc., may be used interchangeably.

[0081] In some embodiments, the notation "at least one of A and B", "A and / or B", "A in one case, B in another", "A in one case, B in another", etc., may include the following technical solutions depending on the situation: in some embodiments, A (A is executed regardless of B); in some embodiments, B (B is executed regardless of A); in some embodiments, execution is selected from A and B (A and B are selectively executed); in some embodiments, both A and B are executed. The same applies when there are more branches such as A, B, C, etc.

[0082] In some embodiments, the notation "A or B" may include the following technical solutions, depending on the situation: in some embodiments, A (execution of A regardless of B); in some embodiments, B (execution of B regardless of A); in some embodiments, selective execution from A and B (A and B are selectively executed). The same applies when there are more branches such as A, B, and C.

[0083] The prefixes "first," "second," etc., used in the embodiments of this disclosure are merely for distinguishing different descriptive objects and do not impose restrictions on the position, order, priority, value, or content of the descriptive objects. The description of the descriptive objects should be found in the claims or the context of the embodiments, and the use of prefixes should not constitute unnecessary restrictions. For example, if the descriptive object is a "field," the ordinal numbers preceding "field" in "first field" and "second field" do not restrict the position or order of the "fields." "First" and "second" do not restrict whether the "fields" they modify are in the same message, nor do they restrict the order of "first field" and "second field." Similarly, if the descriptive object is a "level," the ordinal numbers preceding "level" in "first level" and "second level" do not restrict the priority between "levels." Furthermore, the value of the descriptive object is not limited by ordinal numbers and can be one or more. For example, in "first device," the value of "device" can be one or more. Furthermore, the objects modified by different prefixes can be the same or different. For example, if the object being described is "device", then "first device" and "second device" can be the same device or different devices, and their types can be the same or different. Similarly, if the object being described is "information", then "first information" and "second information" can be the same information or different information, and their content can be the same or different.

[0084] In some embodiments, “including A,” “containing A,” “for indicating A,” and “carrying A” can be interpreted as directly carrying A or indirectly indicating A.

[0085] In some embodiments, terms such as “…”, “determine…”, “in the case of…”, “when…”, “when…”, “if…”, etc. can be used interchangeably.

[0086] In some embodiments, the terms “greater than,” “greater than or equal to,” “not less than,” “more than,” “more than or equal to,” “not less than,” “higher than,” “higher than or equal to,” “not lower than,” and “above” can be used interchangeably, as can the terms “less than,” “less than or equal to,” “not greater than,” “less than,” “less than or equal to,” “not more than,” “lower than,” “lower than or equal to,” “not higher than,” and “below”.

[0087] Furthermore, each element, each row, or each column in the table of this disclosure can be implemented as an independent embodiment, and any combination of any element, any row, or any column can also be implemented as an independent embodiment.

[0088] It should be noted that, unless contradictory, the transistors (such as current discharge transistors and drive transistors) in the embodiments of this application can be N-type transistors, P-type transistors, enhancement-mode transistors, depletion-mode transistors, etc. For N-type transistors, enhancement-mode transistors, or depletion-mode transistors, the on-state level is high and the off-state level is low. That is, when the gate of an N-type transistor is high, its first and second terminals are connected; when the gate of an N-type transistor is low, its first and second terminals are off. For P-type transistors, the on-state level is low and the off-state level is high. That is, when the control terminal of a P-type transistor is low, its first and second terminals are connected; when the control terminal of a P-type transistor is high, its first and second terminals are off. In specific implementation, the gate of each transistor is used as its control terminal. Furthermore, depending on the signal and type of the gate of each transistor, its first terminal can be used as the source and its second terminal as the drain (such as a P-type transistor), or its first terminal can be used as the drain and its second terminal as the source (such as an N-type transistor). In addition, the on-level and off-level in the embodiments of this invention are general terms. The on-level refers to any level that can turn on the transistor, and the off-level refers to any level that can turn off / turn off the transistor.

[0089] like Figure 1 As shown, this disclosure provides an electrostatic discharge protection circuit 100, which includes:

[0090] A current discharge transistor S1 is connected between a first node and a second node; wherein, the current discharge transistor S1 is used to discharge electrostatic pulses between the first node and the second node when it is in the on state;

[0091] Drive module 110; the drive module 110 includes a drive transistor, the drive transistor being used to generate a saturation current based on the electrostatic pulse;

[0092] Voltage generation module 120; the voltage generation module 120 is used to generate a drive voltage signal based on the saturation current to drive the current discharge transistor S1 to turn on.

[0093] In one possible implementation, the first node is the node in the electrostatic discharge protection circuit 100 that performs electrostatic protection, and the second node is the target node for electrostatic discharge. For example, as shown... Figure 1 The first node shown is the gate of the transistor S0 that needs to be protected by the electrostatic discharge protection circuit 100. The second node can be the target node for gate electrostatic discharge, such as power ground.

[0094] In one possible implementation, the second node is the node in the electrostatic discharge protection circuit 100 that performs electrostatic protection, and the first node is the target node for electrostatic discharge.

[0095] In one possible implementation, the first node and the second node are each other's target nodes for electrostatic discharge.

[0096] In one possible implementation, the electrostatic pulse can be an electrostatic pulse on the first node or an electrostatic pulse on the second node.

[0097] In one possible implementation, the saturation current can include the current between the drain and source of the driving transistor in the saturation region. For example, the saturation current can include the drain current of an N-type driving transistor in the saturation region.

[0098] Under certain conditions, the saturation current can remain within a certain range even when the voltage between the drain and source of the driving transistor changes. Therefore, the driving module 110 can be configured to maintain a stable output saturation current for the duration of the electrostatic pulse.

[0099] In one possible implementation, the drive module 110 can be configured to: saturate the drive transistor in the saturation region when there is an electrostatic pulse at the first or second node, thereby generating a saturation current; and saturate the drive transistor in the cutoff or amplification region when there is a normal signal at the first or second node.

[0100] Understandably, when the driving transistor is in the saturation region, the current between the drain and source is the largest compared to the cutoff and amplification regions; that is, the saturation current is the maximum current.

[0101] Here, the voltage generation module 120 can be configured to generate a driving voltage signal when the current between the drain and source of the driving transistor is the saturation current, thereby driving the current discharge transistor S1 to conduct and discharge the electrostatic current; when the current between the drain and source of the driving transistor is less than the saturation current, the generated voltage signal can keep the current discharge transistor S1 in the off state to reduce the impact on the first node and / or the second node.

[0102] The current between the drain and source of the driving transistor corresponds to the voltage value of the driving voltage signal. For example, the current between the drain and source of the driving transistor is positively correlated with the voltage value of the driving voltage signal. The voltage value of the driving voltage signal can be set based on the on-state voltage and / or off-state voltage of the gate of the current discharge transistor S1. The voltage value of the driving voltage signal under saturation current can be set to be greater than or equal to the on-state voltage of the gate of the current discharge transistor S1. Therefore, when an electrostatic pulse arrives, the driving module 110 generates a saturation current, and the driving voltage signal generated by the voltage generation module 120 based on the saturation current can turn on the current discharge transistor S1 to discharge the electrostatic current. When no electrostatic pulse arrives, the current generated by the driving module 110 is less than the saturation current, and the driving voltage signal generated by the voltage generation module 120 is less than the on-state voltage of the gate of the current discharge transistor S1, causing the current discharge transistor S1 to be in the off state.

[0103] Thus, the drive module 110 generates a relatively stable saturated current based on electrostatic pulses, and the voltage generation module 120 generates a stable drive voltage signal to control the conduction of the current discharge transistor S1. On the one hand, electrostatic discharge can be achieved; on the other hand, since the drive voltage signal is relatively stable, the reliability of the control of the current discharge transistor S1 can be improved, and the reliability and stability of the control of the electrostatic discharge protection circuit 100 can be improved.

[0104] In some embodiments, such as Figure 2 As shown, the voltage generation module 120 includes a first resistor R1, and the driving module 110 further includes a second resistor R2 corresponding to the driving transistor S2, wherein...

[0105] The first terminal of the second resistor R2, the first terminal of the driving transistor S2, and the first node are connected;

[0106] The second terminal of the second resistor R2 is connected to the control terminal of the driving transistor S2;

[0107] The first end of the first resistor R1, the second end of the driving transistor S2, and the control end of the current discharge transistor S1 are connected to form a third node;

[0108] The second end of the first resistor R1 is connected to the second node;

[0109] The first terminal of the current discharge transistor S1 is connected to the first node, and the second terminal of the control terminal of the current discharge transistor S1 is connected to the second node.

[0110] The driving transistor S2 is used to generate the saturation current at the first and second terminals of the driving transistor S2 based on the electrostatic pulse on the first node.

[0111] The first resistor R1 is used to generate a driving voltage signal at the first end of the first resistor R1 based on the saturation current, driving the current discharge transistor S1 to conduct, so as to discharge the electrostatic pulse on the first node to the second node.

[0112] In one possible implementation, the driving transistor S2 and the current discharge transistor S1 can be implemented using group III nitride transistors.

[0113] In one possible implementation, the driving transistor S2 and the current discharge transistor S1 can be N-type transistors.

[0114] The saturation current of the driving transistor S2 in the saturation region can be expressed by expression (1):

[0115]

[0116] in, Indicates saturation current. Indicates electron mobility. Indicates the gate oxide capacitance. This indicates the aspect ratio of the driving transistor S2. This represents the threshold voltage of the driving transistor S2. This represents the gate-source voltage difference of the driving transistor S2.

[0117] The voltage generation module 120 generates a drive voltage signal at the control terminal (i.e., the third node) of the current discharge transistor S1 based on the saturation current flowing through the first resistor R1. It can be represented by expression (2):

[0118]

[0119] in, This indicates the resistance value of the first resistor, R1.

[0120] Here, the first resistor R1 can be set based on the gate on-state voltage of the current discharge transistor S1. This allows the drive voltage signal to be adjusted. It is greater than or equal to the gate on-state voltage of the current discharge transistor S1.

[0121] Here, the drive voltage signal The voltage can be greater than or equal to the gate turn-on voltage of the current discharge transistor S1, and less than or equal to the gate withstand voltage of the current discharge transistor S1.

[0122] Thus, the drive module 110 generates a relatively stable saturated current based on electrostatic pulses, and the voltage generation module 120 generates a stable drive voltage signal to control the conduction of the current discharge transistor S1. On the one hand, electrostatic discharge can be achieved; on the other hand, since the drive voltage signal is relatively stable, the reliability of the control of the current discharge transistor S1 can be improved, and the reliability and stability of the control of the electrostatic discharge protection circuit 100 can be improved.

[0123] In some embodiments, such as Figure 3 As shown, the electrostatic discharge protection circuit 100 further includes at least one voltage divider unit 140, wherein the voltage divider unit 140 is provided in at least one of the following:

[0124] Between the first node and the first terminal of the driving transistor S2;

[0125] Between the second terminal of the driving transistor S2 and the third node;

[0126] Between the third node and the control terminal of the current discharge transistor S1;

[0127] The first resistor R1 is connected in series between the third node and the second node.

[0128] Voltage divider unit 140 is used to withstand at least a portion of the voltage in the circuit.

[0129] In one possible implementation, the voltage divider unit 140 can be based on Ohm's law, such as a resistor voltage divider.

[0130] In one possible implementation, the voltage divider unit 140 can be based on a semiconductor PN junction to achieve voltage division.

[0131] like Figure 2 As shown, the voltage between the drain and source of the driving transistor S2 It can be represented by expression (3):

[0132]

[0133] in, This indicates the operating voltage of the protection circuit under electrostatic pulse.

[0134] Due to the protection action voltage Typically large, and the drive voltage signal That is to say The voltage needs to be greater than the threshold voltage of the current discharge transistor S1; therefore, the voltage between the drain and source of the driving transistor S2 must be... Larger. Therefore, as Figure 3As shown, voltage division can be performed through the voltage divider unit 140 between the first node and the first terminal of the driving transistor S2, and the voltage divider unit 140 between the second terminal of the driving transistor S2 and the third node, to reduce the voltage between the drain and source of the driving transistor S2. This reduces the power consumption of the drive transistor S2 and the likelihood of it breaking down, thereby improving circuit reliability.

[0135] like Figure 3 As shown, the voltage divider unit 140 between the third node and the control terminal of the current discharge transistor S1 can be used to share the voltage difference between the third node and the control terminal of the current discharge transistor S1, so that even when the third node is at a higher voltage, the control terminal of the current discharge transistor S1 can still remain within the withstand voltage range of the gate of the current discharge transistor S1. It is understandable that the higher the voltage of the third node, the lower the voltage required for the same protection operation voltage. The smaller the voltage difference between the drain and source of the driving transistor S2 under certain conditions, the smaller the voltage between the drain and source of the driving transistor S2 can be. This reduces the power consumption of the drive transistor S2 and the likelihood of it breaking down, thereby improving circuit reliability.

[0136] like Figure 3 As shown, the voltage divider unit 140, which is connected in series with the first resistor R1 between the third node and the second node, can share the voltage of the third node and reduce the voltage load on the first resistor R1. On the other hand, the voltage of the third node is not completely determined by the first resistor R1. Therefore, compared with the first resistor R1 with a fixed resistance value, the flexibility of selecting the first resistor R1 can be improved.

[0137] In one possible implementation, the voltage divider unit 140, which is connected in series with the first resistor R1 between the third node and the second node, can be located between the third node and the first end of the first resistor R1, or between the second node and the second end of the first resistor R1.

[0138] In some embodiments, the voltage divider unit 140 includes at least one of a diode sequence and a third resistor R3;

[0139] The diode sequence includes at least one diode connected in series in the same direction, wherein...

[0140] The anode of the diode sequence is connected to the first node, and the cathode of the diode sequence is connected to the first terminal of the driving transistor S2; and / or

[0141] The anode of the diode sequence is connected to the second terminal of the driving transistor S2, and the cathode of the diode sequence is connected to the third node; and / or

[0142] The anode of the diode sequence is connected to the third node, and the cathode of the diode sequence is connected to the control terminal of the current discharge transistor S1; and / or

[0143] The anode of the diode sequence is connected to the second end of the first resistor R1, and the cathode of the diode sequence is connected to the third node.

[0144] In one possible implementation, the anode of the diode sequence is connected to the third node, and the cathode of the diode sequence is connected to the first end of the first resistor R1.

[0145] Understandably, voltage divider unit 140 may include at least one of a diode sequence and a third resistor R3.

[0146] In the diode sequence, the anode of diode 1 is connected to the cathode of diode 2, the anode of diode 2 is connected to the cathode of diode 3, and so on.

[0147] The anode of the diode sequence may include the anode of the diode at the first end of the diode sequence, and the cathode of the diode sequence may include the cathode of the diode at the second end of the diode sequence.

[0148] For example, such as Figure 4 As shown, the diode sequence includes n diodes from 1 to n, where n is an integer greater than or equal to 1. The anode of diode 1 is connected to the cathode of diode 2, the anode of diode 2 is connected to the cathode of diode 3, and so on, until it is connected to diode n. The anode of the diode sequence is the anode of diode n, and the cathode of the diode sequence is the cathode of diode 1.

[0149] Here, voltage division can be achieved using the forward conduction voltage of the diode PN junction. When the diode sequence is forward conducting, the voltage it withstands is the product of the forward conduction voltage of the PN junction of each diode in the diode sequence and the number of diodes in the diode sequence.

[0150] For example, such as Figure 5 As shown, D1 represents the diode sequence between the first node and the first terminal of the driving transistor S2; D2 represents the diode sequence between the second terminal of the driving transistor S2 and the third node; and D3 represents the diode sequence between the third node and the control terminal of the current discharge transistor S1. Figure 5 In the middle, the voltage between the drain and source of the driving transistor S2 It can be represented by expression (4),

[0151]

[0152] in, and Let represent the forward conduction voltages of the PN junctions of diode sequence D1 and diode sequence D2, respectively. Therefore, compared to the case of expression (2), the voltage between the drain and source of driving transistor S2 is... It gets smaller.

[0153] Meanwhile, due to the presence of diode sequence D3, the voltage at the third node can be a higher value, i.e., in expression (4). The voltage increases, therefore, the voltage between the drain and source of the driving transistor S2 increases. The size is further reduced, thereby reducing the power consumption of the drive transistor S2 and the possibility of the drive transistor S2 breaking down and being damaged, thus improving the reliability of the circuit.

[0154] For example, such as Figure 6 As shown, D4 represents a diode sequence connected in series with the first resistor R1 between the third node and the second node.

[0155] In one possible implementation, the diode sequence D4 can be positioned between the third node and the first terminal of the first resistor R1, or it can be positioned between the second node and the second terminal of the first resistor R1.

[0156] The diode sequence D4 can share the voltage of the third node together with the first resistor R1. On the other hand, the diode sequence D4 can reduce the interference of the reverse signal from the second node on the electrostatic discharge protection circuit 100.

[0157] For example, such as Figure 7 As shown, D4 represents a diode sequence connected in series with the first resistor R1 between the third node and the second node. The third resistor R3 is positioned between the second terminal of the driving transistor S2 and the third node for voltage division. The function of the diode sequence D4 is as follows: Figure 6 As described in the embodiment. The voltage across the third resistor R3 is... In this way, the voltage of the driving transistor S2 can be effectively divided, thereby reducing the power consumption of the driving transistor S2 and reducing the possibility of the driving transistor S2 being damaged by breakdown, thus improving the reliability of the circuit.

[0158] In some embodiments, such as Figure 8 As shown, the driving module 110 includes: a transistor sequence comprising N driving transistors S2, and a second resistor R2 corresponding to each driving transistor S2; wherein,

[0159] The N driving transistors S2 are connected in series, with the first end of one transistor at one end of the transistor sequence connected to the first node, and the second end of the transistor at the other end of the transistor sequence connected to the third node.

[0160] The first end of each second resistor R2 is connected to the first node; the second end of each second resistor R2 is connected to the control terminal of the corresponding driving transistor S2.

[0161] Figure 8 The diagram illustrates, by way of example, driving transistors connected in series: driving transistor S2' and driving transistor S2''. A second resistor R2' corresponds to driving transistor S2', and a second resistor R2'' corresponds to driving transistor S2''.

[0162] N driving transistors S2 are connected in series, which may include connecting the second end of driving transistor 1 to the first end of driving transistor 2, connecting the second end of driving transistor 2 to the first end of driving transistor 3, and so on.

[0163] Figure 8 An electrostatic discharge protection circuit 100 with N=2 is illustrated as an example. Figure 8 It can be seen that the voltage between the drain and source of each driving transistor S2 is... It can be represented by expression (5).

[0164]

[0165] That is, the voltage between the drain and source of each driving transistor. It is negatively correlated with N. Therefore, when multiple drive transistors are used in series, the voltage between the first node and the second node can be shared by N drive transistors, thereby reducing the voltage between the drain and source of each drive transistor, which in turn reduces the power consumption of the drive transistors, reduces the possibility of drive transistor breakdown and damage, and improves circuit reliability.

[0166] In some embodiments, such as Figure 9 As shown, the driving module 110 includes a first driving module 111 and a second driving module 112, and the voltage generation module 120 includes a first voltage generation module 121 and a second voltage generation module 122; wherein,

[0167] The first driving module 111 includes a first driving transistor, which is used to generate a first saturation current based on a first electrostatic pulse on the first node;

[0168] The first voltage generation module 121 is used to generate a first driving voltage signal based on the first saturation current to drive the current discharge transistor S1 to turn on;

[0169] The second driving module 112 includes a second driving transistor, which is used to generate a second saturation current based on a second electrostatic pulse on the second node;

[0170] The second voltage generation module 122 is used to generate a second driving voltage signal based on the second saturation current to drive the current discharge transistor S1 to turn on.

[0171] Here, the first node and the second node are target nodes for electrostatic discharge. When a first electrostatic pulse occurs on the first node, the first driving module 111 generates a first driving voltage signal in conjunction with the first driving transistor to drive the current discharge transistor S1 to conduct, discharging the first electrostatic pulse to the second node through the current discharge transistor S1. When a second electrostatic pulse occurs on the second node, the second driving module 112 generates a second driving voltage signal in conjunction with the second driving transistor to drive the current discharge transistor S1 to conduct, discharging the second electrostatic pulse to the first node through the current discharge transistor S1.

[0172] The specific implementation of the first driving module 111 generating a first saturation current based on a first electrostatic pulse and the first voltage generation module 121 generating a first driving voltage signal based on the first saturation current are similar to the implementation of the driving module 110 generating a saturation current based on an electrostatic pulse and the voltage generation module 120 generating a driving voltage signal based on the saturation current described in any of the above embodiments, and will not be described in detail here.

[0173] The specific implementation of the second driving module 112 generating a second saturation current based on the second electrostatic pulse and the second voltage generation module 122 generating a second driving voltage signal based on the second saturation current are similar to the implementation of the driving module 110 generating a saturation current based on the electrostatic pulse and the voltage generation module 120 generating a driving voltage signal based on the saturation current described in any of the above embodiments, and will not be described in detail here.

[0174] In some embodiments, the current discharge transistor S1 includes a bidirectional conduction transistor.

[0175] In one possible implementation, the current discharge transistor S1 can be a group III nitride transistor.

[0176] By employing a bidirectional transistor, the bidirectional transistor can be turned on when the voltage difference between the gate of the current discharge transistor S1 and the first node is greater than the threshold voltage, or when the voltage difference between the gate of the current discharge transistor S1 and the second node is greater than the threshold voltage, so as to discharge the first electrostatic pulse or the second electrostatic pulse respectively.

[0177] Thus, by generating a first driving voltage signal for the first electrostatic pulse through the first driving module 111 and the first voltage generation module 121, the first electrostatic pulse is released; by generating a second driving voltage signal for the second electrostatic pulse through the second driving module 112 and the second voltage generation module 122, the second electrostatic pulse is released, thereby achieving bidirectional electrostatic discharge protection for the first node and the second node.

[0178] In some embodiments, such as Figure 10 As shown, the first driving module 111 further includes a fourth resistor R4 corresponding to the first driving transistor S3, and the first voltage generation module 121 includes a fifth resistor R5 and a first diode D5, wherein,

[0179] The first terminal of the fourth resistor R4, the first terminal of the first driving transistor S3, and the first node are connected;

[0180] The second terminal of the fourth resistor R4 is connected to the control terminal of the first driving transistor S3;

[0181] The first terminal of the fifth resistor R5, the second terminal of the first driving transistor S3, and the control terminal of the current discharge transistor S1 are connected.

[0182] The second end of the fifth resistor R5 is connected to the anode of the first diode D5, and the cathode of the first diode D5 is connected to the second node.

[0183] The second driving module 112 further includes a sixth resistor R6 corresponding to the second driving transistor S4, and the second voltage generation module 122 includes a seventh resistor R7 and a second diode D6, wherein,

[0184] The second terminal of the sixth resistor R6, the first terminal of the second driving transistor S4, and the second node are connected;

[0185] The first terminal of the sixth resistor R6 is connected to the control terminal of the second driving transistor S4;

[0186] The second terminal of the seventh resistor R7, the second terminal of the second driving transistor S4, and the control terminal of the current discharge transistor S1 are connected;

[0187] The first end of the seventh resistor R7 is connected to the anode of the second diode D6, and the cathode of the second diode D6 is connected to the first node.

[0188] like Figure 10 As shown, when the first node experiences a first electrostatic pulse, the first driving transistor S3 is saturated and turned on. The first saturation current of the first driving transistor S3 flows from its second terminal through the fifth resistor R5 and the first diode D5 to the second node. The first saturation current generates a voltage drop across the fifth resistor R5. Combined with the forward conduction voltage of the first diode D5, this generates a first driving voltage signal at the control terminal (gate) of the current discharge transistor S1, driving the current discharge transistor S1 to turn on and discharge the first electrostatic pulse to the second node.

[0189] The first diode D5 can share the voltage of the first driving voltage signal together with the fifth resistor R5. Furthermore, the first diode D5 can reduce the interference of the reverse signal from the second node on the electrostatic discharge protection circuit 100.

[0190] When the second electrostatic pulse occurs at the second node, the second driving transistor S4 is saturated and turned on. The second saturation current of the second driving transistor S4 flows from its second terminal through the seventh resistor R7 and the second diode D6 to the first node. The second saturation current generates a voltage drop across the seventh resistor R7. Combined with the forward voltage of the second diode D6, this generates a second driving voltage signal at the control terminal (gate) of the current discharge transistor S1, driving the current discharge transistor S1 to turn on and discharge the second electrostatic pulse to the first node.

[0191] The second diode D6 can share the voltage of the second driving voltage signal together with the seventh resistor R7. Furthermore, the second diode D6 can reduce the interference of the reverse signal from the first node on the electrostatic discharge protection circuit 100.

[0192] In some embodiments, the first driving module 111 further includes a fourth resistor R4 corresponding to the first driving transistor S3, and the first voltage generation module 121 includes a fifth resistor R5, a seventh resistor R7, and a first diode D5, wherein...

[0193] The first terminal of the fourth resistor R4, the first terminal of the first driving transistor S3, and the first node are connected;

[0194] The second terminal of the fourth resistor R4 is connected to the control terminal of the first driving transistor S3;

[0195] The first terminal of the seventh resistor R7 is connected to the second terminal of the first driving transistor S3;

[0196] The second terminal of the seventh resistor R7, the first terminal of the fifth resistor R5, and the control terminal of the current discharge transistor S1 are connected;

[0197] The second end of the fifth resistor R5 is connected to the anode of the first diode D5, and the cathode of the first diode D5 is connected to the second node.

[0198] The second driving module 112 further includes a sixth resistor R6 corresponding to the second driving transistor S4, and the second voltage generation module 122 includes the fifth resistor R5, the seventh resistor R7, and the second diode D6, wherein,

[0199] The second terminal of the sixth resistor R6, the first terminal of the second driving transistor S4, and the second node are connected;

[0200] The first terminal of the sixth resistor R6 is connected to the control terminal of the second driving transistor S4;

[0201] The second terminal of the fifth resistor R5 is connected to the second terminal of the second driving transistor S4;

[0202] The first end of the seventh resistor R7 is connected to the anode of the second diode D6, and the cathode of the second diode D6 is connected to the first node.

[0203] like Figure 11 As shown, when the first node experiences a first electrostatic pulse, the first driving transistor S3 is saturated and turned on. The first saturation current of the first driving transistor S3 flows from its second terminal through the seventh resistor R7, the fifth resistor R5, and the first diode D5 to the second node. This first saturation current generates a voltage drop across the fifth resistor R5. Combined with the forward voltage of the first diode D5, this generates a first driving voltage signal at the control terminal (gate) of the current discharge transistor S1, driving the current discharge transistor S1 to turn on and discharge the first electrostatic pulse to the second node. The seventh resistor R7 is used to divide the voltage of the first driving transistor S3; the voltage division value of the seventh resistor R7 is the product of the resistance of the seventh resistor R7 and the first saturation current.

[0204] The first diode D5 can share the voltage of the first driving voltage signal together with the fifth resistor R5. Furthermore, the first diode D5 can reduce the interference of the reverse signal from the second node on the electrostatic discharge protection circuit 100. Additionally, by dividing the voltage through the seventh resistor R7, the voltage between the drain and source of the first driving transistor S3 can be reduced, thereby reducing the power consumption of the first driving transistor S3 and the possibility of breakdown damage to the driving transistor S2, thus improving circuit reliability.

[0205] When the second electrostatic pulse occurs at the second node, the second driving transistor S4 is saturated and turned on. The second saturation current of the second driving transistor S4 flows from its second terminal through the fifth resistor R5, the seventh resistor R7, and the second diode D6 to the first node. The second saturation current generates a voltage drop across the seventh resistor R7. Combined with the forward voltage of the second diode D6, this generates a second driving voltage signal at the control terminal (gate) of the current discharge transistor S1, driving the current discharge transistor S1 to turn on and discharge the second electrostatic pulse to the first node. The fifth resistor R5 is used to divide the voltage of the second driving transistor S4. The voltage division value of the fifth resistor R5 is the product of the resistance of the fifth resistor R5 and the second saturation current.

[0206] The second diode D6 can share the voltage of the second driving voltage signal together with the seventh resistor R7. Furthermore, the second diode D6 can reduce the interference of the reverse signal from the first node on the electrostatic discharge protection circuit 100. Additionally, through the voltage division by the fifth resistor R5, the voltage between the drain and source of the second driving transistor S4 can be reduced, thereby reducing the power consumption of the second driving transistor S4 and the possibility of breakdown damage to the driving transistor S2, thus improving circuit reliability.

[0207] In some embodiments, there are multiple first diodes D5, and the multiple first diodes D5 are connected in series.

[0208] There are multiple second diodes D6, and the multiple second diodes D6 are connected in series.

[0209] Here, the diodes are connected in series as follows: Figure 4 The details will not be repeated here.

[0210] When diodes are connected in series, a diode sequence is formed. When the diode sequence is forward-biased, the forward voltage is equal to the sum of the forward voltages of the diodes in the sequence.

[0211] In one possible implementation, the forward conduction voltage of the diode sequence is less than the conduction voltage of the control terminal of the current discharge transistor S1.

[0212] Figure 12 An electronic device 10 is shown according to an embodiment of this disclosure, the electronic device 10 including: an electrostatic discharge protection circuit 100. The electrostatic discharge protection circuit 100 is as follows... Figures 3 to 10 As shown in the examples, they will not be repeated here.

[0213] In some possible implementations, electronic device 10 may include independent electronic devices, such as integrated circuit chips.

[0214] In some possible implementations, the electronic device 10 may be composed of multiple electronic components, and the electrostatic discharge protection circuit 100 may be set in the electronic device 10 in the form of discrete components.

[0215] Other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This disclosure is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of the invention are indicated by the claims.

[0216] It should be understood that the present invention is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.

Claims

1. An electrostatic discharge protection circuit, characterized in that, The electrostatic discharge protection circuit includes: A current discharge transistor; the current discharge transistor is connected between a first node and a second node; wherein, the current discharge transistor is used to discharge electrostatic pulses between the first node and the second node in the on state; The driving module includes a driving transistor, which is used to generate a saturation current based on the electrostatic pulse. A voltage generation module; the voltage generation module is used to generate a drive voltage signal based on the saturation current to drive the current discharge transistor to turn on; The voltage generation module includes a first resistor, and the driving module further includes a second resistor corresponding to the driving transistor, wherein... The first terminal of the second resistor, the first terminal of the driving transistor, and the first node are connected; The second terminal of the second resistor is connected to the control terminal of the driving transistor; The first end of the first resistor, the second end of the driving transistor, and the control end of the current discharge transistor are connected to form a third node; the driving transistor is an N-type transistor, the first end of the driving transistor is the drain, and the second end of the driving transistor is the source; The second end of the first resistor is connected to the second node; The first terminal of the current discharge transistor is connected to the first node, and the second terminal of the control terminal of the current discharge transistor is connected to the second node; The driving transistor is used to generate the saturation current at the first and second terminals of the driving transistor based on the electrostatic pulse on the first node. The first resistor is used to generate a drive voltage signal at the first end of the first resistor based on the saturation current, which drives the current discharge transistor to turn on, so as to discharge the electrostatic pulse on the first node to the second node; The electrostatic discharge protection circuit further includes a diode sequence between the third node and the control terminal of the current discharge transistor, the diode sequence including at least one diode connected in series in the same direction; the anode of the diode sequence is connected to the third node, and the cathode of the diode sequence is connected to the control terminal of the current discharge transistor.

2. The electrostatic discharge protection circuit according to claim 1, characterized in that, The electrostatic discharge protection circuit further includes at least one voltage divider unit, wherein the voltage divider unit is configured in at least one of the following ways: Between the first node and the first terminal of the driving transistor; Between the second terminal of the driving transistor and the third node; The first resistor is connected in series between the third node and the second node.

3. The electrostatic discharge protection circuit according to claim 2, characterized in that, The voltage divider unit includes at least one of a first diode sequence and a third resistor; wherein... The anode of the first diode sequence is connected to the first node, and the cathode of the first diode sequence is connected to the first terminal of the driving transistor; and / or The anode of the first diode sequence is connected to the second terminal of the driving transistor, and the cathode of the first diode sequence is connected to the third node; and / or The anode of the first diode sequence is connected to the second end of the first resistor, and the cathode of the first diode sequence is connected to the third node.

4. The electrostatic discharge protection circuit according to claim 3, characterized in that, The driving module includes: a transistor sequence comprising N driving transistors, and a second resistor corresponding to each driving transistor; wherein, The N driving transistors are connected in series, with the first end of the driving transistor at one end of the transistor sequence connected to the first node, and the second end of the driving transistor at the other end of the transistor sequence connected to the third node. The first end of each second resistor is connected to the first node; the second end of each second resistor is connected to the control terminal of the corresponding driving transistor.

5. The electrostatic discharge protection circuit according to claim 1, characterized in that, The driving module includes a first driving module and a second driving module, and the voltage generation module includes a first voltage generation module and a second voltage generation module; wherein... The first driving module includes a first driving transistor, which is used to generate a first saturation current based on a first electrostatic pulse on the first node; The first voltage generation module is used to generate a first driving voltage signal based on the first saturation current to drive the current discharge transistor to turn on; The second driving module includes a second driving transistor, which is used to generate a second saturation current based on a second electrostatic pulse on the second node; The second voltage generation module is used to generate a second driving voltage signal based on the second saturation current to drive the current discharge transistor to turn on.

6. An electrostatic discharge protection circuit, characterized in that, The electrostatic discharge protection circuit includes: a current discharge transistor, a first driving module, a second driving module, a first voltage generation module, and a second voltage generation module; wherein... The current discharge transistor is connected between the first node and the second node; wherein, the current discharge transistor is used to discharge electrostatic pulses between the first node and the second node when it is in the on state. The first driving module includes a first driving transistor, which is used to generate a first saturation current based on a first electrostatic pulse on the first node; The first voltage generation module is used to generate a first driving voltage signal based on the first saturation current to drive the current discharge transistor to turn on; The second driving module includes a second driving transistor, which is used to generate a second saturation current based on a second electrostatic pulse on the second node; The second voltage generation module is used to generate a second driving voltage signal based on the second saturation current to drive the current discharge transistor to turn on; The first driving module further includes a fourth resistor corresponding to the first driving transistor, and the first voltage generation module includes a fifth resistor and a first diode, wherein, The first end of the fourth resistor, the first end of the first driving transistor, and the first node are connected; The second terminal of the fourth resistor is connected to the control terminal of the first driving transistor; The first terminal of the fifth resistor, the second terminal of the first driving transistor, and the control terminal of the current discharge transistor are connected; The second end of the fifth resistor is connected to the anode of the first diode, and the cathode of the first diode is connected to the second node; The second driving module further includes a sixth resistor corresponding to the second driving transistor, and the second voltage generation module includes a seventh resistor and a second diode, wherein, The second end of the sixth resistor, the first end of the second driving transistor, and the second node are connected; The first terminal of the sixth resistor is connected to the control terminal of the second driving transistor; The second terminal of the seventh resistor, the second terminal of the second driving transistor, and the control terminal of the current discharge transistor are connected; The first end of the seventh resistor is connected to the anode of the second diode, and the cathode of the second diode is connected to the first node; The first driving transistor is an N-type transistor, with its first terminal being the drain and its second terminal being the source; the second driving transistor is an N-type transistor, with its first terminal being the drain and its second terminal being the source.

7. The electrostatic discharge protection circuit according to claim 6, characterized in that, The first diode has multiple diodes, and the multiple first diodes are connected in series; The second diode has multiple diodes, which are connected in series.

8. The electrostatic discharge protection circuit according to claim 6 or 7, characterized in that, The current discharge transistor includes a bidirectional conduction transistor.

9. An electrostatic discharge protection circuit, characterized in that, The electrostatic discharge protection circuit includes: a current discharge transistor, a first driving module, a second driving module, a first voltage generation module, and a second voltage generation module; wherein... The current discharge transistor is connected between the first node and the second node; wherein, the current discharge transistor is used to discharge electrostatic pulses between the first node and the second node when it is in the on state. The first driving module includes a first driving transistor, which is used to generate a first saturation current based on a first electrostatic pulse on the first node; The first voltage generation module is used to generate a first driving voltage signal based on the first saturation current to drive the current discharge transistor to turn on; The second driving module includes a second driving transistor, which is used to generate a second saturation current based on a second electrostatic pulse on the second node; The second voltage generation module is used to generate a second driving voltage signal based on the second saturation current to drive the current discharge transistor to turn on; The first driving module further includes a fourth resistor corresponding to the first driving transistor, and the first voltage generation module includes a fifth resistor, a seventh resistor, and a first diode, wherein, The first end of the fourth resistor, the first end of the first driving transistor, and the first node are connected; The second terminal of the fourth resistor is connected to the control terminal of the first driving transistor; The first end of the seventh resistor is connected to the second end of the first driving transistor; The second end of the seventh resistor, the first end of the fifth resistor, and the control terminal of the current discharge transistor are connected; The second end of the fifth resistor is connected to the anode of the first diode, and the cathode of the first diode is connected to the second node; The second driving module further includes a sixth resistor corresponding to the second driving transistor, and the second voltage generation module includes the fifth resistor, the seventh resistor, and the second diode, wherein, The second end of the sixth resistor, the first end of the second driving transistor, and the second node are connected; The first terminal of the sixth resistor is connected to the control terminal of the second driving transistor; The second end of the fifth resistor is connected to the second end of the second driving transistor; The first end of the seventh resistor is connected to the anode of the second diode, and the cathode of the second diode is connected to the first node; The first driving transistor is an N-type transistor, with its first terminal being the drain and its second terminal being the source; the second driving transistor is an N-type transistor, with its first terminal being the drain and its second terminal being the source.

10. The electrostatic discharge protection circuit according to claim 9, characterized in that, The first diode has multiple diodes, and the multiple first diodes are connected in series; The second diode has multiple diodes, which are connected in series.

11. The electrostatic discharge protection circuit according to claim 9 or 10, characterized in that, The current discharge transistor includes a bidirectional conduction transistor.

12. An electronic device, characterized in that, The electronic device includes the electrostatic discharge protection circuit according to any one of claims 1 to 11.

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