Ultraviolet led epitaxial wafer, preparation method thereof, led chip and light emitting device
By adding a modified graphene layer to the ZnO multi-quantum-well layer and utilizing its plasmon resonance effect, the problem of the influence of defect and impurity energy levels on the radiative luminescence efficiency of ZnO materials was solved, and the ultraviolet luminescence efficiency was improved.
CN120730892BActive Publication Date: 2025-12-23JIANGXI CHANGELIGHT CO LTD
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Patent Information
- Application Number
- CN202511222207.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-29
- Publication Date
- 2025-12-23
- Estimated Expiration
- 2045-08-29
Smart Images
Figure CN120730892B_ABST
Abstract
The application provides an ultraviolet LED epitaxial wafer and a preparation method thereof, an LED chip and a light-emitting device, and relates to the technical field of electronic components.The ultraviolet LED epitaxial wafer comprises a substrate, an N-type layer, a multi-quantum well layer and a P-type layer which are sequentially stacked on the substrate; the multi-quantum well layer comprises a modified graphene layer, a ZnO quantum well layer and a ZnO quantum barrier layer; the modified graphene layer is a graphene layer treated by plasma, and the gas for the plasma treatment is oxygen; and the application can solve the problem that, in the prior art, the existence of many defects and impurity levels in ZnO material affects the radiation light-emitting efficiency.
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