Control method, control device, storage medium, and system for a tank cleaning device

Abstract

The application provides a control method, a control device, a storage medium and a system of a tank cleaning device. The method is applied to the tank cleaning device. The method comprises the following steps: obtaining a total impurity proportion of a to-be-cleaned silicon wafer and a proportion threshold value, the total impurity proportion being the sum of impurity proportions of a plurality of to-be-cleaned silicon wafers, and the proportion threshold value being the maximum value of the area of impurities allowed to be dissolved in the cleaning liquid in the cleaning tank; determining the size relationship between the total impurity proportion and the proportion threshold value; in the case that the total impurity proportion is less than or equal to the proportion threshold value, determining that the liquid replacement period is a predetermined time length, and the liquid replacement period is the time difference between adjacent two times of replacing the cleaning liquid of each cleaning tank; in the case that the total impurity proportion is greater than the proportion threshold value, calculating the liquid replacement period according to the predetermined time length, the total impurity proportion and the proportion threshold value, and the liquid replacement period is less than the predetermined time length; and controlling the tank cleaning device according to the liquid replacement period. The method solves the problem of unsatisfactory cleaning effect of the tank cleaning device in the prior art.

Description

Technical Field

[0001] This application relates to the field of silicon wafer cleaning, and more specifically, to a control method for a tank cleaning apparatus, a control device for a tank cleaning apparatus, a computer-readable storage medium, and a tank cleaning system. Background Technology

[0002] In the photovoltaic industry, silicon wafers, as the basic material for solar cells, require multiple processing steps during manufacturing to achieve predetermined performance indicators. Cleaning is one of the key steps, aiming to remove impurities and contaminants from the silicon wafer surface to ensure the smooth progress of subsequent processing. Traditional cleaning processes often rely on manual experience to adjust cleaning parameters, such as the concentration of the cleaning solution and the frequency of replacement. This not only reduces cleaning efficiency but also increases operating costs.

[0003] Therefore, there is an urgent need for a method to solve the problem of unsatisfactory cleaning effect of existing tank-type cleaning devices. Summary of the Invention

[0004] The main objective of this application is to provide a control method for a tank cleaning device, a control device for a tank cleaning device, a computer-readable storage medium, and a tank cleaning system, so as to at least solve the problem of unsatisfactory cleaning effect of tank cleaning devices in the prior art.

[0005] According to one aspect of this application, a control method for a tank-type cleaning device is provided. The method is applied to a tank-type cleaning device comprising multiple cleaning tanks. The method includes: obtaining a total impurity percentage and a percentage threshold of a silicon wafer to be cleaned, wherein the total impurity percentage is the sum of the impurity percentages of the multiple silicon wafers to be cleaned, and the percentage threshold is the maximum area of ​​the impurities that can be dissolved by the cleaning solution in the cleaning tank; determining the relationship between the total impurity percentage and the percentage threshold; when the total impurity percentage is less than or equal to the percentage threshold, determining a liquid replacement cycle of a predetermined duration, wherein the liquid replacement cycle is the time difference between two adjacent liquid replacements in each of the cleaning tanks, and the predetermined duration is 11.5~12.5 hours; when the total impurity percentage is greater than the percentage threshold, calculating the liquid replacement cycle based on the predetermined duration, the total impurity percentage, and the percentage threshold, wherein the liquid replacement cycle is less than the predetermined duration; and controlling the tank-type cleaning device according to the liquid replacement cycle to replace the cleaning solution in the cleaning tanks.

[0006] Optionally, obtaining the total impurity percentage of the silicon wafer to be cleaned includes: obtaining the wafer routing speed, wherein the wafer routing speed is the cleaning time of one silicon wafer to be cleaned in one production line of the tank-type cleaning device, and the unit of the wafer routing speed is seconds / wafer; according to the formula Calculate the total amount of the silicon wafers to be cleaned. ,in, For the predetermined duration, The wafer stacking speed is specified; the impurity area and surface area of ​​each silicon wafer to be cleaned are obtained, where the surface area is the area of ​​one side surface of the silicon wafer to be cleaned, and the impurity area corresponds one-to-one with the surface area; the ratio of the impurity area to the surface area is calculated to obtain multiple impurity percentages; according to the formula... Calculate the total proportion of the impurities. ,in, For the first The percentage of impurities in each silicon wafer to be cleaned.

[0007] Optionally, obtaining the percentage threshold includes: obtaining the average impurity percentage of the silicon wafer to be cleaned; according to the formula Calculate the percentage threshold, where, The number of production lines in the tank-type cleaning device. The average impurity percentage is... The surface area is... The percentage threshold is denoted as .

[0008] Optionally, obtaining the impurity area of ​​each of the silicon wafers to be cleaned includes: acquiring an image of the silicon wafer to be cleaned to obtain a silicon wafer image; processing the silicon wafer image to extract a target region in the silicon wafer image, wherein the brightness of the target region is different from the brightness of the surface of the silicon wafer to be cleaned; and calculating the area of ​​the target region to obtain the impurity area.

[0009] Optionally, if the total proportion of impurities is greater than the proportion threshold, the liquid replacement cycle is calculated based on the predetermined duration, the total proportion of impurities, and the proportion threshold, including: according to the formula Calculate the fluid exchange cycle ,in, For the predetermined duration, The percentage of impurities is the total amount. The percentage threshold is denoted as .

[0010] Optionally, controlling the tank-type cleaning device according to the fluid replacement cycle to replace the cleaning fluid in the cleaning tank includes: a first control step, controlling the silicon wafer to be cleaned to enter the first cleaning tank for cleaning; a second control step, controlling the first cleaning tank to discharge the cleaning fluid; a third control step, controlling the silicon wafer to be cleaned to enter the second cleaning tank for cleaning, and controlling the first cleaning tank to enter the cleaning fluid, wherein the second cleaning tank is adjacent to the first cleaning tank, and the second cleaning tank is the next cleaning tank after the first cleaning tank; a repetition step, repeating the second control step and the third control step at least once in sequence, and during the repetition, updating the first cleaning tank in the second control step to the second cleaning tank in the previous repetition process, until the first cleaning tank is the last of the plurality of cleaning tanks.

[0011] Optionally, after determining the relationship between the total impurity percentage and the percentage threshold, before controlling the tank cleaning device according to the liquid replacement cycle to replace the cleaning liquid in the cleaning tank, the method further includes: controlling the next silicon wafer to be cleaned to stop entering the first cleaning tank.

[0012] According to another aspect of this application, a control device for a tank-type cleaning apparatus is provided. The apparatus is applied to a tank-type cleaning apparatus comprising multiple cleaning tanks. The device includes: an acquisition unit, configured to acquire the total impurity percentage and a percentage threshold of the silicon wafers to be cleaned, wherein the total impurity percentage is the sum of the impurity percentages of the multiple silicon wafers to be cleaned, and the percentage threshold is the maximum area of ​​the impurities that the cleaning fluid in the cleaning tank can accommodate; a first determining unit, configured to determine the relationship between the total impurity percentage and the percentage threshold; a second determining unit, configured to determine a fluid replacement cycle of a predetermined duration when the total impurity percentage is less than or equal to the percentage threshold, wherein the fluid replacement cycle is the cycle for replacing the cleaning fluid in each of the cleaning tanks, and the predetermined duration is 11.5~12.5 hours; a calculation unit, configured to calculate the fluid replacement cycle based on the predetermined duration, the total impurity percentage, and the percentage threshold when the total impurity percentage is greater than the percentage threshold, wherein the fluid replacement cycle is less than the predetermined duration; and a control unit, configured to control the tank-type cleaning apparatus according to the fluid replacement cycle to replace the cleaning fluid in the cleaning tanks.

[0013] According to another aspect of this application, a computer-readable storage medium is provided, the computer-readable storage medium including a stored program, wherein, when the program is executed, it controls the device on which the computer-readable storage medium is located to perform any of the methods described.

[0014] According to another aspect of this application, a tank cleaning system is provided, comprising: a tank cleaning device; a control device for the tank cleaning device, communicatively connected to the tank cleaning device, and the control device for the tank cleaning device being used to perform any of the methods described.

[0015] This application provides a control method for a tank-type cleaning device. Based on the relationship between the total impurity percentage and a threshold percentage, the degree of contamination of a batch of silicon wafers can be determined. If the total impurity percentage is less than or equal to the threshold percentage, the contamination level of the batch of silicon wafers is not high, and the original liquid replacement cycle can be followed to achieve the desired cleaning effect. If the total impurity percentage is greater than the threshold percentage, the contamination level of the batch of silicon wafers is high, and the liquid replacement cycle needs to be adjusted according to the degree of contamination. Specifically, a new liquid replacement cycle is calculated based on a predetermined duration, the total impurity percentage, and the threshold percentage. Since this new cycle is shorter than the original predetermined duration, the incidence of impurity contamination of the silicon wafers can be reduced, thereby reducing the problem of incomplete cleaning due to excessive impurity content. This solves the problem in the prior art where, when a series of highly contaminated silicon wafers appear, the cleaning solution cannot be replaced in a timely manner, resulting in unsatisfactory cleaning effects. Attached Figure Description

[0016] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0017] Figure 1 A hardware structure block diagram of a mobile terminal for performing a control method of a tank cleaning apparatus according to an embodiment of this application is shown.

[0018] Figure 2 A schematic flowchart of a control method for a tank-type cleaning apparatus according to an embodiment of this application is shown.

[0019] Figure 3 A structural block diagram of a control device for a tank-type cleaning apparatus provided according to an embodiment of this application is shown.

[0020] The above figures include the following reference numerals:

[0021] 102. Processor; 104. Memory; 106. Transmission device; 108. Input / output device. Detailed Implementation

[0022] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0023] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0024] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this application described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0025] As described in the background section, the cleaning effect of existing tank cleaning devices is not ideal. To solve the above problems, embodiments of this application provide a control method for a tank cleaning device, a control device for a tank cleaning device, a computer-readable storage medium, and a tank cleaning system.

[0026] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

[0027] The methods and embodiments provided in this application can be executed on a mobile terminal, computer terminal, or similar computing device. Taking running on a mobile terminal as an example, Figure 1 This is a hardware structure block diagram of a mobile terminal for a control method of a tank-type cleaning device according to an embodiment of the present invention. (See diagram for example.) Figure 1 As shown, a mobile terminal may include one or more ( Figure 1 Only one is shown in the diagram. A processor 102 (which may include, but is not limited to, a microprocessor MCU or a programmable logic device FPGA, etc.) and a memory 104 for storing data are also shown. The mobile terminal may further include a transmission device 106 for communication functions and an input / output device 108. Those skilled in the art will understand that... Figure 1 The structure shown is for illustrative purposes only and does not limit the structure of the mobile terminal described above. For example, the mobile terminal may also include components that are more... Figure 1 The more or fewer components shown, or having the same Figure 1The different configurations shown.

[0028] The memory 104 can be used to store computer programs, such as application software programs and modules, like the computer program corresponding to the control method of the tank cleaning device in this embodiment of the invention. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, thereby implementing the above-described method. The memory 104 may include high-speed random access memory, and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some instances, the memory 104 may further include memory remotely located relative to the processor 102, and these remote memories can be connected to the mobile terminal via a network. Examples of the aforementioned networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof. The transmission device 106 is used to receive or send data via a network. Specific examples of the aforementioned networks may include wireless networks provided by the mobile terminal's communication provider. In one example, the transmission device 106 includes a network interface controller (NIC), which can be connected to other network devices via a base station to communicate with the Internet. In one example, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0029] This embodiment provides a control method for a tank-type cleaning device that operates on a mobile terminal, computer terminal, or similar computing device. It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions. Furthermore, although a logical order is shown in the flowchart, in some cases, the steps shown or described may be executed in a different order than that shown here.

[0030] Figure 2 This is a flowchart of a control method for a tank-type cleaning apparatus according to an embodiment of this application. The method is applied to a tank-type cleaning apparatus, which includes multiple cleaning tanks, such as... Figure 2 As shown, the method includes the following steps:

[0031] Step S201: Obtain the total impurity percentage and percentage threshold of the silicon wafer to be cleaned. The total impurity percentage is the sum of the impurity percentages of the multiple silicon wafers to be cleaned. The percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank is allowed to dissolve.

[0032] Step S202: Determine the relationship between the total proportion of the above-mentioned impurities and the above-mentioned proportion threshold.

[0033] Step S203: When the total proportion of the above-mentioned impurities is less than or equal to the above-mentioned proportion threshold, the liquid replacement cycle is determined to be a predetermined duration, wherein the liquid replacement cycle is the time difference between two adjacent replacements of the cleaning liquid in each of the above-mentioned cleaning tanks, and the predetermined duration is 11.5~12.5h.

[0034] Step S204: When the total proportion of the above-mentioned impurities is greater than the above-mentioned proportion threshold, the above-mentioned liquid replacement cycle is calculated based on the above-mentioned predetermined duration, the above-mentioned total proportion of the above-mentioned impurities and the above-mentioned proportion threshold, wherein the above-mentioned liquid replacement cycle is less than the above-mentioned predetermined duration.

[0035] Step S205: Control the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank.

[0036] Specifically, a tank-type cleaning system is an industrial cleaning device primarily used in industries such as semiconductors, photovoltaics, electronics, and machining, especially for cleaning precision parts. It removes impurities, oil, and particulate matter from workpiece surfaces by circulating cleaning fluid through a series of cleaning tanks, achieving a high level of cleanliness. The tank-type cleaning system comprises multiple cleaning tanks, each containing a specific cleaning solution or medium. Workpieces are automatically or semi-automatically transferred from one tank to another, undergoing different stages such as pre-cleaning, main cleaning, rinsing, and drying. The cleaning tanks may be equipped with auxiliary equipment such as heaters, ultrasonic generators, and agitators to enhance the cleaning effect. Workpieces remain in each tank for a certain period to ensure thorough removal of impurities. In practical applications, some cleaning tanks hold the cleaning agent, while others hold water. The last water-carrying tank on the production line has a continuous pure water overflow outlet, from which water flows out and drains away from the first water-carrying tank.

[0037] The aforementioned impurities can be particulate impurities, organic impurities, and inorganic impurities. Particulate impurities include silicon powder, metal particles, quartz fragments, and environmental dust; organic impurities include colloid residues, grease, and microorganisms; and inorganic impurities include alkaline earth metals, acid and alkali residues, and silicon oxides. If the total proportion of impurities exceeds a certain threshold, it indicates a high degree of contamination of the silicon wafer; conversely, if the proportion is less than a certain threshold, it indicates a low degree of contamination. In practical applications, the predetermined duration can be 11.5 hours, 12 hours, or 12.5 hours, and those skilled in the art can select the appropriate duration based on the specific circumstances. Furthermore, if the total proportion of impurities exceeds the aforementioned threshold, the solution replacement cycle can be calculated based on the difference between the total impurity proportion and the threshold, the threshold value, and the predetermined duration.

[0038] This embodiment provides a control method for a tank-type cleaning device. Based on the relationship between the total impurity percentage and a threshold percentage, the degree of contamination of a batch of silicon wafers can be determined. If the total impurity percentage is less than or equal to the threshold percentage, the contamination level of the batch of silicon wafers is not high, and the original solution replacement cycle can be followed to achieve the desired cleaning effect. If the total impurity percentage is greater than the threshold percentage, the contamination level of the batch of silicon wafers is high, and the solution replacement cycle needs to be adjusted according to the degree of contamination. Specifically, a new solution replacement cycle is calculated based on a predetermined duration, the total impurity percentage, and the threshold percentage. Since this new cycle is shorter than the original predetermined duration, the incidence of impurity contamination of the silicon wafers can be reduced, thereby reducing the problem of incomplete cleaning due to excessive impurity content. This solves the problem in the prior art where, when a series of highly contaminated silicon wafers appear, the cleaning solution cannot be replaced in a timely manner, resulting in unsatisfactory cleaning effects.

[0039] In specific implementation, step S201 can be achieved through the following steps: Step S2011, obtain the wafer arrangement speed, wherein the wafer arrangement speed is the cleaning time of one silicon wafer to be cleaned in one production line of the tank cleaning device, and the unit of the wafer arrangement speed is seconds / wafer; Step S2012, according to the formula Calculate the total amount of the silicon wafers to be cleaned. ,in, For the aforementioned scheduled duration, The above-mentioned wafer arrangement speed; Step S2013, obtain the impurity area and surface area of ​​each of the above-mentioned silicon wafers to be cleaned, wherein the surface area is the area of ​​one side surface of the silicon wafer to be cleaned, and the impurity area corresponds one-to-one with the surface area; Step S2014, calculate the ratio of the impurity area to the surface area to obtain multiple impurity percentages; Step S2015, according to the formula Calculate the total percentage of the above impurities. ,in, For the first The method describes the percentage of impurities in the aforementioned silicon wafers to be cleaned. This method can further improve the accuracy of calculating the total percentage of impurities.

[0040] In practical applications, silicon wafers from the same batch are generally of the same model; therefore, the aforementioned surface areas may also be the same. When silicon wafer models differ, the average surface area of ​​multiple different silicon wafers can be calculated. Specifically, the impurity area of ​​the silicon wafer to be cleaned can be obtained using an image acquisition device.

[0041] To further improve the accuracy of the percentage threshold calculation, step S201 of this application can also be implemented through the following steps: Step S2016, obtaining the average impurity percentage of the silicon wafer to be cleaned; Step S2017, according to the formula... Calculate the above percentage thresholds, where, This refers to the number of production lines in the aforementioned tank-type cleaning apparatus. The above represents the average percentage of impurities. The above surface area, The aforementioned percentage threshold is used. This method can further and quickly calculate the aforementioned percentage threshold using factors such as average impurity percentage, number of production lines, predetermined duration, wafer stacking speed, and surface area.

[0042] Specifically, the aforementioned average impurity percentage is the average impurity percentage on a silicon wafer under normal circumstances. In practical applications, the units for the aforementioned wafer routing speed and predetermined duration can be other types, such as: the unit for wafer routing speed can be minutes / wafer or hour / wafer, and the unit for wafer routing speed can be seconds, minutes, etc. Those skilled in the art can adjust the formula for the aforementioned percentage threshold accordingly based on the actual units of the wafer routing speed and predetermined duration.

[0043] Step S2013 above can also be implemented in other ways, for example: step S20131, acquiring an image of the silicon wafer to be cleaned to obtain a silicon wafer image; step S20132, processing the silicon wafer image to extract a target region in the silicon wafer image, wherein the brightness of the target region is different from the brightness of the surface of the silicon wafer to be cleaned; step S20133, calculating the area of ​​the target region to obtain the impurity area. This method can further quickly obtain the impurity area.

[0044] Specifically, the aforementioned silicon wafer images can be obtained using image acquisition devices, such as cameras and video cameras. In practical applications, these image acquisition devices can be positioned above the wafer stacking end to ensure a comprehensive and clear image of the silicon wafer surface, while avoiding the influence of water mist and chemical splashes generated during the cleaning process on the camera. The specific steps for obtaining the aforementioned impurity area are as follows: Take a picture of each silicon wafer passing through the wafer stacking end using a camera to obtain a surface image; use algorithms to remove random noise from the image to improve the accuracy of subsequent analysis; convert the color image to a grayscale image to simplify subsequent processing complexity; employ image enhancement algorithms, such as brightness enhancement, to ensure good differentiation between the silicon powder area and the silicon wafer background; use algorithms such as the Canny algorithm and the Sobel operator to find edges in the image; based on the brightness difference between the impurities and the silicon wafer, set an appropriate threshold to separate the impurity area from the background. Alternatively, a deep learning model (such as a convolutional neural network CNN) can be trained to identify impurities, improving the accuracy and robustness of identification.

[0045] In some embodiments, step S204 can be implemented by the following steps: Step S2041, according to the formula Calculate the above fluid replacement cycle. ,in, For the aforementioned scheduled duration, This represents the total percentage of the aforementioned impurities. The threshold value mentioned above represents the percentage. This method can further improve the accuracy of the above-mentioned fluid exchange cycle calculation.

[0046] Specifically, the above formula for calculating the liquid replacement cycle calculates the reduction in liquid replacement cycle time compared to the predetermined time by calculating the ratio of the portion of the total impurity percentage exceeding the percentage threshold to the percentage threshold. In other words, for every doubling of the impurity area on the silicon wafer, the liquid replacement cycle is reduced by 1 hour. Thus, the above formula can calculate the accurate liquid replacement cycle.

[0047] Step S205 can also be implemented through the following steps, for example: Step S2051, a first control step, controlling the silicon wafer to be cleaned to enter the first cleaning tank for cleaning; Step S2052, a second control step, controlling the first cleaning tank to discharge cleaning liquid; Step S2053, a third control step, controlling the silicon wafer to be cleaned to enter the second cleaning tank for cleaning, and controlling the first cleaning tank to enter cleaning liquid, wherein the second cleaning tank is adjacent to the first cleaning tank, and the second cleaning tank is the next cleaning tank after the first cleaning tank; Step S2054, a repetition step, repeating the second control step and the third control step at least once, and during the repetition, updating the first cleaning tank in the second control step to the second cleaning tank in the previous repetition, until the first cleaning tank is the last of the plurality of cleaning tanks. This method can further improve the accuracy of the control tank cleaning device.

[0048] Specifically, taking a tank-type cleaning device comprising six cleaning tanks as an example, arranged in the following order: tank 1, tank 2, tank 3, tank 4, tank 5, and tank 6. The specific steps for controlling the tank-type cleaning device according to the above-mentioned liquid replacement cycle are as follows: When the cleaning process time of tank 1 is completed, tank 1 begins to drain; after the tablets are introduced into tank 2, cleaning begins; after the water in tank 1 is drained, the drain valve closes, and water begins to enter; after the water in tank 1 is completed, chemical dosing begins; after the cleaning of tank 2 is completed, drainage begins; after the tablets are introduced into tank 3, cleaning begins; after the tablets are introduced into tank 1, the water in tank 2 is drained and water begins to enter; after the water in tank 3 is drained, the tablets begin to enter tank 4; following the above logic until the water in tank 6 is drained, water in, and chemical dosing is completed, the tablets begin to enter.

[0049] After step S202 and before step S205, the method further includes step S206, controlling the next silicon wafer to be cleaned to stop entering the first cleaning tank. This method can further prevent the impact of the liquid change process of the tank cleaning device on the cleaning of silicon wafers, thereby further improving the cleaning effect of the tank cleaning device.

[0050] Specifically, upon receiving a solution change signal, the wafer inserter stops feeding wafers and then begins solution change. The cleaning tank follows the same logic for draining, filling, and adding chemicals, thus reducing solution change time and increasing production capacity. In practical applications, a large-diameter drainage device can be installed to accelerate the drainage process.

[0051] In practical applications, assuming each water tank contains V liters of solvent, each machine requires changing 6 water tanks, the existing drainage capacity per tank is 10 liters / second, then the drainage time is V / 10. The silicon wafer cleaning process takes 170 seconds, each tank has a water filling capacity of 14 liters / second, so the water filling time is V / 14. The chemical filling time per tank is 30 seconds. The cleaning machine's saturated gravity drainage capacity is 25 liters / second, and the drainage pump in this application has a drainage capacity of 20 liters / second. Therefore, the existing drainage time is (V / 20) seconds < 300 seconds. In the prior art, the total drainage time during the drug replacement cycle is 3×2V / 20+3×V / 14+30×6, while the total drainage time during the drug replacement cycle in this application is 2×V / 20+V / 14+30. The drainage time saved is (3×2V / 20+3×V / 14+30×6)-(2×V / 20+V / 14+30)=(12×V / 35)+150. In other words, the production capacity can be increased by {[(12×V / 35)+150] / 43200}.

[0052] This application also provides a control device for a tank-type cleaning apparatus. It should be noted that the control device for the tank-type cleaning apparatus in this application can be used to execute the control method for the tank-type cleaning apparatus provided in this application. This device is used to implement the above embodiments and preferred embodiments; details already described will not be repeated. As used below, the term "module" can refer to a combination of software and / or hardware that implements a predetermined function. Although the apparatus described in the following embodiments is preferably implemented in software, hardware implementation, or a combination of software and hardware, is also possible and contemplated.

[0053] The control device of the tank cleaning apparatus provided in the embodiments of this application will be described below.

[0054] Figure 3 This is a schematic diagram of a control device for a tank-type cleaning apparatus according to an embodiment of this application. The above-described device is applied to a tank-type cleaning apparatus, which includes multiple cleaning tanks, such as... Figure 3 As shown, the device includes:

[0055] The acquisition unit 10 is used to acquire the total impurity percentage and percentage threshold of the silicon wafer to be cleaned. The total impurity percentage is the sum of the impurity percentages of multiple silicon wafers to be cleaned, and the percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank is allowed to dissolve.

[0056] The first determining unit 20 is used to determine the relationship between the total proportion of the above-mentioned impurities and the above-mentioned proportion threshold.

[0057] The second determining unit 30 is used to determine the liquid replacement cycle as a predetermined duration when the total proportion of the impurities is less than or equal to the proportion threshold, wherein the liquid replacement cycle is the time difference between two adjacent replacements of the cleaning liquid in each of the above-mentioned cleaning tanks, and the predetermined duration is 11.5~12.5h.

[0058] The calculation unit 40 is used to calculate the liquid replacement cycle based on the predetermined duration, the total proportion of impurities, and the proportion threshold when the total proportion of impurities is greater than the predetermined duration.

[0059] The control unit 50 is used to control the tank-type cleaning device according to the above-mentioned fluid replacement cycle, so as to replace the cleaning fluid in the cleaning tank.

[0060] Specifically, a tank-type cleaning system is an industrial cleaning device primarily used in industries such as semiconductors, photovoltaics, electronics, and machining, especially for cleaning precision parts. It removes impurities, oil, and particulate matter from workpiece surfaces by circulating cleaning fluid through a series of cleaning tanks, achieving a high level of cleanliness. The tank-type cleaning system comprises multiple cleaning tanks, each containing a specific cleaning solution or medium. Workpieces are automatically or semi-automatically transferred from one tank to another, undergoing different stages such as pre-cleaning, main cleaning, rinsing, and drying. The cleaning tanks may be equipped with auxiliary equipment such as heaters, ultrasonic generators, and agitators to enhance the cleaning effect. Workpieces remain in each tank for a certain period to ensure thorough removal of impurities. In practical applications, some cleaning tanks hold the cleaning agent, while others hold water. The last water-carrying tank on the production line has a continuous pure water overflow outlet, from which water flows out and drains away from the first water-carrying tank.

[0061] The aforementioned impurities can be particulate impurities, organic impurities, and inorganic impurities. Particulate impurities include silicon powder, metal particles, quartz fragments, and environmental dust; organic impurities include colloid residues, grease, and microorganisms; and inorganic impurities include alkaline earth metals, acid and alkali residues, and silicon oxides. If the total proportion of impurities exceeds a certain threshold, it indicates a high degree of contamination of the silicon wafer; conversely, if the proportion is less than a certain threshold, it indicates a low degree of contamination. In practical applications, the predetermined duration can be 11.5 hours, 12 hours, or 12.5 hours, and those skilled in the art can select the appropriate duration based on the specific circumstances. Furthermore, if the total proportion of impurities exceeds the aforementioned threshold, the solution replacement cycle can be calculated based on the difference between the total impurity proportion and the threshold, the threshold value, and the predetermined duration.

[0062] This embodiment provides a control device for a tank-type cleaning apparatus. Based on the relationship between the total impurity percentage and a threshold percentage, the degree of contamination of a batch of silicon wafers can be determined. If the total impurity percentage is less than or equal to the threshold percentage, the contamination level of the batch of silicon wafers is not high, and the original solution replacement cycle can be followed to achieve the desired cleaning effect. If the total impurity percentage is greater than the threshold percentage, the contamination level of the batch of silicon wafers is high, and the solution replacement cycle needs to be adjusted according to the degree of contamination. Specifically, a new solution replacement cycle is calculated based on a predetermined duration, the total impurity percentage, and the threshold percentage. Since this new cycle is shorter than the original predetermined duration, the incidence of impurity contamination of the silicon wafers can be reduced, thereby reducing the problem of incomplete cleaning due to excessive impurity content. This solves the problem in the prior art where, when a series of highly contaminated silicon wafers appear, the cleaning solution cannot be replaced in a timely manner, resulting in unsatisfactory cleaning effects.

[0063] In specific implementation, the aforementioned acquisition unit includes a first acquisition module, a first calculation module, a second acquisition module, a second calculation module, and a third calculation module. The first acquisition module is used to acquire the wafer arrangement speed, where the wafer arrangement speed is the cleaning time of one silicon wafer to be cleaned in one production line of the aforementioned tank-type cleaning device, and the unit of the wafer arrangement speed is seconds per wafer. The first calculation module is used to calculate the wafer arrangement speed according to the formula... Calculate the total amount of the silicon wafers to be cleaned. ,in, For the aforementioned scheduled duration, The above-mentioned wafer arrangement speed; the second acquisition module is used to acquire the impurity area and surface area of ​​each of the above-mentioned silicon wafers to be cleaned, wherein the surface area is the area of ​​one side surface of the silicon wafer to be cleaned, and the impurity area corresponds one-to-one with the surface area; the second calculation module is used to calculate the ratio of the impurity area to the surface area respectively to obtain multiple impurity percentages; the third calculation module is used to calculate according to the formula Calculate the total percentage of the above impurities. ,in, For the first The device measures the percentage of impurities in the aforementioned silicon wafers to be cleaned. This device can further improve the accuracy of calculating the total percentage of impurities.

[0064] In practical applications, silicon wafers from the same batch are generally of the same model; therefore, the aforementioned surface areas may also be the same. When silicon wafer models differ, the average surface area of ​​multiple different silicon wafers can be calculated. Specifically, the impurity area of ​​the silicon wafer to be cleaned can be obtained using an image acquisition device.

[0065] To further improve the accuracy of the percentage threshold calculation, the acquisition unit of this application further includes a third acquisition module and a fourth calculation module. The third acquisition module is used to acquire the average impurity percentage of the silicon wafer to be cleaned; the fourth calculation module is used to calculate the impurity percentage according to the formula... Calculate the above percentage thresholds, where, This refers to the number of production lines in the aforementioned tank-type cleaning apparatus. The above represents the average percentage of impurities. The above surface area, The aforementioned percentage threshold is used. This device can further and quickly calculate the aforementioned percentage threshold using factors such as average impurity percentage, number of production lines, predetermined duration, stacking speed, and surface area.

[0066] Specifically, the aforementioned average impurity percentage is the average impurity percentage on a silicon wafer under normal circumstances. In practical applications, the units for the aforementioned wafer routing speed and predetermined duration can be other types, such as: the unit for wafer routing speed can be minutes / wafer or hour / wafer, and the unit for wafer routing speed can be seconds, minutes, etc. Those skilled in the art can adjust the formula for the aforementioned percentage threshold accordingly based on the actual units of the wafer routing speed and predetermined duration.

[0067] The second acquisition module includes an acquisition submodule, a processing submodule, and a calculation submodule. The acquisition submodule acquires an image of the silicon wafer to be cleaned, obtaining a silicon wafer image. The processing submodule processes the silicon wafer image to extract a target region, wherein the brightness of the target region differs from the brightness of the surface of the silicon wafer to be cleaned. The calculation submodule calculates the area of ​​the target region to obtain the impurity area. This device can further quickly acquire the impurity area.

[0068] Specifically, the aforementioned silicon wafer images can be obtained using image acquisition devices, such as cameras and video cameras. In practical applications, these image acquisition devices can be positioned above the wafer stacking end to ensure a comprehensive and clear image of the silicon wafer surface, while avoiding the influence of water mist and chemical splashes generated during the cleaning process on the camera. The specific steps for obtaining the aforementioned impurity area are as follows: Take a picture of each silicon wafer passing through the wafer stacking end using a camera to obtain a surface image; use algorithms to remove random noise from the image to improve the accuracy of subsequent analysis; convert the color image to a grayscale image to simplify subsequent processing complexity; employ image enhancement algorithms, such as brightness enhancement, to ensure good differentiation between the silicon powder area and the silicon wafer background; use algorithms such as the Canny algorithm and the Sobel operator to find edges in the image; based on the brightness difference between the impurities and the silicon wafer, set an appropriate threshold to separate the impurity area from the background. Alternatively, a deep learning model (such as a convolutional neural network CNN) can be trained to identify impurities, improving the accuracy and robustness of identification.

[0069] In some embodiments, the above-mentioned calculation unit includes a fifth calculation module, used to calculate according to the formula Calculate the above fluid replacement cycle. ,in, For the aforementioned scheduled duration, This represents the total percentage of the aforementioned impurities. The threshold value is the aforementioned percentage. This device can further improve the accuracy of the above-mentioned fluid change cycle calculation.

[0070] Specifically, the above formula for calculating the liquid replacement cycle calculates the reduction in liquid replacement cycle time compared to the predetermined time by calculating the ratio of the portion of the total impurity percentage exceeding the percentage threshold to the percentage threshold. In other words, for every doubling of the impurity area on the silicon wafer, the liquid replacement cycle is reduced by 1 hour. Thus, the above formula can calculate the accurate liquid replacement cycle.

[0071] The control unit includes a first control module, a second control module, a third control module, and a repeating module. The first control module is used in a first control step to control the silicon wafer to be cleaned to enter a first cleaning tank for cleaning. The second control module is used in a second control step to control the first cleaning tank to discharge cleaning fluid. The third control module is used in a third control step to control the silicon wafer to be cleaned to enter a second cleaning tank for cleaning, and to control the first cleaning tank to enter cleaning fluid. The second cleaning tank is adjacent to the first cleaning tank and is the next cleaning tank after the first cleaning tank. The repeating module is used in a repeating step to sequentially repeat the second and third control steps at least once. During the repeating process, the first cleaning tank in the second control step is updated to the second cleaning tank from the previous repeating process, until the first cleaning tank is the last of a plurality of cleaning tanks. This device can further improve the accuracy of the tank-type cleaning device.

[0072] Specifically, taking a tank-type cleaning device comprising six cleaning tanks as an example, arranged in the following order: tank 1, tank 2, tank 3, tank 4, tank 5, and tank 6. The specific steps for controlling the tank-type cleaning device according to the above-mentioned liquid replacement cycle are as follows: When the cleaning process time of tank 1 is completed, tank 1 begins to drain; after the tablets are introduced into tank 2, cleaning begins; after the water in tank 1 is drained, the drain valve closes, and water begins to enter; after the water in tank 1 is completed, chemical dosing begins; after the cleaning of tank 2 is completed, drainage begins; after the tablets are introduced into tank 3, cleaning begins; after the tablets are introduced into tank 1, the water in tank 2 is drained and water begins to enter; after the water in tank 3 is drained, the tablets begin to enter tank 4; following the above logic until the water in tank 6 is drained, water in, and chemical dosing is completed, the tablets begin to enter.

[0073] The aforementioned device further includes a fourth control module, used to control the next silicon wafer to be cleaned to stop entering the first cleaning tank. This device can further prevent the impact of the liquid change process on the silicon wafer cleaning process in the tank cleaning device, thereby further improving the cleaning effect of the tank cleaning device.

[0074] Specifically, upon receiving a solution change signal, the wafer inserter stops feeding wafers and then begins solution change. The cleaning tank follows the same logic for draining, filling, and adding chemicals, thus reducing solution change time and increasing production capacity. In practical applications, a large-diameter drainage device can be installed to accelerate the drainage process.

[0075] In practical applications, assuming each water tank contains V liters of solvent, each machine requires changing 6 water tanks, the existing drainage capacity per tank is 10 liters / second, then the drainage time is V / 10. The silicon wafer cleaning process takes 170 seconds, each tank has a water filling capacity of 14 liters / second, so the water filling time is V / 14. The chemical filling time per tank is 30 seconds. The cleaning machine's saturated gravity drainage capacity is 25 liters / second, and the drainage pump in this application has a drainage capacity of 20 liters / second. Therefore, the existing drainage time is (V / 20) seconds < 300 seconds. In the prior art, the total drainage time during the drug replacement cycle is 3×2V / 20+3×V / 14+30×6, while the total drainage time during the drug replacement cycle in this application is 2×V / 20+V / 14+30. The drainage time saved is (3×2V / 20+3×V / 14+30×6)-(2×V / 20+V / 14+30)=(12×V / 35)+150. In other words, the production capacity can be increased by {[(12×V / 35)+150] / 43200}.

[0076] The control device of the aforementioned tank-type cleaning apparatus includes a processor and a memory. The acquisition unit, first determination unit, second determination unit, calculation unit, and control unit are all stored as program units in the memory. The processor executes these program units stored in the memory to achieve the corresponding functions. All of the above modules are located in the same processor; alternatively, the modules may be located in different processors in any combination.

[0077] The processor contains a core, which retrieves the corresponding program unit from memory. One or more cores can be configured, and the tank cleaning device is controlled by adjusting the core parameters.

[0078] The memory may include non-permanent memory in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0079] This invention provides a computer-readable storage medium including a stored program, wherein, when the program is executed, it controls the device containing the computer-readable storage medium to perform the control method of the tank cleaning apparatus.

[0080] Specifically, the control methods for the tank-type cleaning device include:

[0081] Step S201: Obtain the total impurity percentage and percentage threshold of the silicon wafer to be cleaned. The total impurity percentage is the sum of the impurity percentages of the multiple silicon wafers to be cleaned. The percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank is allowed to dissolve.

[0082] Step S202: Determine the relationship between the total proportion of the above-mentioned impurities and the above-mentioned proportion threshold.

[0083] Step S203: When the total proportion of the above-mentioned impurities is less than or equal to the above-mentioned proportion threshold, the liquid replacement cycle is determined to be a predetermined duration, wherein the liquid replacement cycle is the time difference between two adjacent replacements of the cleaning liquid in each of the above-mentioned cleaning tanks, and the predetermined duration is 11.5~12.5h.

[0084] Step S204: When the total proportion of the above-mentioned impurities is greater than the above-mentioned proportion threshold, the above-mentioned liquid replacement cycle is calculated based on the above-mentioned predetermined duration, the above-mentioned total proportion of the above-mentioned impurities and the above-mentioned proportion threshold, wherein the above-mentioned liquid replacement cycle is less than the above-mentioned predetermined duration.

[0085] Step S205: Control the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank.

[0086] Optionally, obtaining the total impurity percentage of the silicon wafer to be cleaned includes: obtaining the wafer routing speed, wherein the wafer routing speed is the cleaning time of one silicon wafer to be cleaned in one production line of the tank cleaning device, and the unit of the wafer routing speed is seconds / wafer; according to the formula Calculate the total amount of the silicon wafers to be cleaned. ,in, For the aforementioned scheduled duration, The above-mentioned wafer arrangement speed is used; the impurity area and surface area of ​​each of the above-mentioned silicon wafers to be cleaned are obtained, wherein the surface area is the area of ​​one side surface of each of the silicon wafers to be cleaned, and the impurity area corresponds one-to-one with the surface area; the ratio of the impurity area to the surface area is calculated respectively to obtain multiple impurity percentages; according to the formula Calculate the total percentage of the above impurities. ,in, For the first The percentage of the aforementioned impurities in the aforementioned silicon wafers to be cleaned.

[0087] Optionally, obtaining the impurity area of ​​each of the aforementioned silicon wafers to be cleaned includes: acquiring an image of the silicon wafer to be cleaned to obtain a silicon wafer image; processing the silicon wafer image to extract a target region in the silicon wafer image, wherein the brightness of the target region is different from the brightness of the surface of the silicon wafer to be cleaned; and calculating the area of ​​the target region to obtain the impurity area.

[0088] Optionally, controlling the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank includes: a first control step, controlling the silicon wafer to be cleaned to enter the first cleaning tank for cleaning; a second control step, controlling the first cleaning tank to discharge the cleaning fluid; a third control step, controlling the silicon wafer to be cleaned to enter the second cleaning tank for cleaning, and controlling the first cleaning tank to enter the cleaning fluid, wherein the second cleaning tank is adjacent to the first cleaning tank, and the second cleaning tank is the next cleaning tank after the first cleaning tank; a repetition step, repeating the second control step and the third control step at least once in sequence, and during the repetition, updating the first cleaning tank in the second control step to the second cleaning tank in the previous repetition process, until the first cleaning tank is the last of the plurality of cleaning tanks.

[0089] Optionally, after determining the relationship between the total proportion of impurities and the proportion threshold, before controlling the tank-type cleaning device according to the liquid replacement cycle to replace the cleaning liquid in the cleaning tank, the method further includes: controlling the next silicon wafer to be cleaned to stop entering the first cleaning tank.

[0090] This invention provides a processor for running a program, wherein the program executes the control method of the tank cleaning device.

[0091] Specifically, the control methods for the tank-type cleaning device include:

[0092] Step S201: Obtain the total impurity percentage and percentage threshold of the silicon wafer to be cleaned. The total impurity percentage is the sum of the impurity percentages of the multiple silicon wafers to be cleaned. The percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank is allowed to dissolve.

[0093] Step S202: Determine the relationship between the total proportion of the above-mentioned impurities and the above-mentioned proportion threshold.

[0094] Step S203: When the total proportion of the above-mentioned impurities is less than or equal to the above-mentioned proportion threshold, the liquid replacement cycle is determined to be a predetermined duration, wherein the liquid replacement cycle is the time difference between two adjacent replacements of the cleaning liquid in each of the above-mentioned cleaning tanks, and the predetermined duration is 11.5~12.5h.

[0095] Step S204: When the total proportion of the above-mentioned impurities is greater than the above-mentioned proportion threshold, the above-mentioned liquid replacement cycle is calculated based on the above-mentioned predetermined duration, the above-mentioned total proportion of the above-mentioned impurities and the above-mentioned proportion threshold, wherein the above-mentioned liquid replacement cycle is less than the above-mentioned predetermined duration.

[0096] Step S205: Control the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank.

[0097] Optionally, obtaining the total impurity percentage of the silicon wafer to be cleaned includes: obtaining the wafer routing speed, wherein the wafer routing speed is the cleaning time of one silicon wafer to be cleaned in one production line of the tank cleaning device, and the unit of the wafer routing speed is seconds / wafer; according to the formula Calculate the total amount of the silicon wafers to be cleaned. ,in, For the aforementioned scheduled duration, The above-mentioned wafer arrangement speed is used; the impurity area and surface area of ​​each of the above-mentioned silicon wafers to be cleaned are obtained, wherein the surface area is the area of ​​one side surface of each of the silicon wafers to be cleaned, and the impurity area corresponds one-to-one with the surface area; the ratio of the impurity area to the surface area is calculated respectively to obtain multiple impurity percentages; according to the formula Calculate the total percentage of the above impurities. ,in, For the first The percentage of the aforementioned impurities in the aforementioned silicon wafers to be cleaned.

[0098] Optionally, obtaining the aforementioned percentage threshold includes: obtaining the average impurity percentage of the silicon wafer to be cleaned; according to the formula Calculate the above percentage thresholds, where, This refers to the number of production lines in the aforementioned tank-type cleaning apparatus. The above represents the average percentage of impurities. The above surface area, The above percentage threshold.

[0099] Optionally, obtaining the impurity area of ​​each of the aforementioned silicon wafers to be cleaned includes: acquiring an image of the silicon wafer to be cleaned to obtain a silicon wafer image; processing the silicon wafer image to extract a target region in the silicon wafer image, wherein the brightness of the target region is different from the brightness of the surface of the silicon wafer to be cleaned; and calculating the area of ​​the target region to obtain the impurity area.

[0100] Optionally, if the total proportion of impurities exceeds the aforementioned proportion threshold, the liquid replacement cycle is calculated based on the predetermined duration, the total proportion of impurities, and the aforementioned proportion threshold, including: according to the formula Calculate the above fluid replacement cycle. ,in, For the aforementioned scheduled duration, This represents the total percentage of the aforementioned impurities. The above percentage threshold.

[0101] Optionally, controlling the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank includes: a first control step, controlling the silicon wafer to be cleaned to enter the first cleaning tank for cleaning; a second control step, controlling the first cleaning tank to discharge the cleaning fluid; a third control step, controlling the silicon wafer to be cleaned to enter the second cleaning tank for cleaning, and controlling the first cleaning tank to enter the cleaning fluid, wherein the second cleaning tank is adjacent to the first cleaning tank, and the second cleaning tank is the next cleaning tank after the first cleaning tank; a repetition step, repeating the second control step and the third control step at least once in sequence, and during the repetition, updating the first cleaning tank in the second control step to the second cleaning tank in the previous repetition process, until the first cleaning tank is the last of the plurality of cleaning tanks.

[0102] Optionally, after determining the relationship between the total proportion of impurities and the proportion threshold, before controlling the tank-type cleaning device according to the liquid replacement cycle to replace the cleaning liquid in the cleaning tank, the method further includes: controlling the next silicon wafer to be cleaned to stop entering the first cleaning tank.

[0103] This invention provides a device including a processor, a memory, and a program stored in the memory and executable on the processor. When the processor executes the program, it performs at least the following steps:

[0104] Step S201: Obtain the total impurity percentage and percentage threshold of the silicon wafer to be cleaned. The total impurity percentage is the sum of the impurity percentages of the multiple silicon wafers to be cleaned. The percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank is allowed to dissolve.

[0105] Step S202: Determine the relationship between the total proportion of the above-mentioned impurities and the above-mentioned proportion threshold.

[0106] Step S203: When the total proportion of the above-mentioned impurities is less than or equal to the above-mentioned proportion threshold, the liquid replacement cycle is determined to be a predetermined duration, wherein the liquid replacement cycle is the time difference between two adjacent replacements of the cleaning liquid in each of the above-mentioned cleaning tanks, and the predetermined duration is 11.5~12.5h.

[0107] Step S204: When the total proportion of the above-mentioned impurities is greater than the above-mentioned proportion threshold, the above-mentioned liquid replacement cycle is calculated based on the above-mentioned predetermined duration, the above-mentioned total proportion of the above-mentioned impurities and the above-mentioned proportion threshold, wherein the above-mentioned liquid replacement cycle is less than the above-mentioned predetermined duration.

[0108] Step S205: Control the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank.

[0109] The devices mentioned in this article can be servers, PCs, tablets, mobile phones, etc.

[0110] Optionally, obtaining the aforementioned percentage threshold includes: obtaining the average impurity percentage of the silicon wafer to be cleaned; according to the formula Calculate the above percentage thresholds, where, This refers to the number of production lines in the aforementioned tank-type cleaning apparatus. The above represents the average percentage of impurities. The above surface area, The above percentage threshold.

[0111] Optionally, obtaining the impurity area of ​​each of the aforementioned silicon wafers to be cleaned includes: acquiring an image of the silicon wafer to be cleaned to obtain a silicon wafer image; processing the silicon wafer image to extract a target region in the silicon wafer image, wherein the brightness of the target region is different from the brightness of the surface of the silicon wafer to be cleaned; and calculating the area of ​​the target region to obtain the impurity area.

[0112] Optionally, if the total proportion of impurities exceeds the aforementioned proportion threshold, the liquid replacement cycle is calculated based on the predetermined duration, the total proportion of impurities, and the aforementioned proportion threshold, including: according to the formula Calculate the above fluid replacement cycle. ,in, For the aforementioned scheduled duration, This represents the total percentage of the aforementioned impurities. The above percentage threshold.

[0113] Optionally, controlling the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank includes: a first control step, controlling the silicon wafer to be cleaned to enter the first cleaning tank for cleaning; a second control step, controlling the first cleaning tank to discharge the cleaning fluid; a third control step, controlling the silicon wafer to be cleaned to enter the second cleaning tank for cleaning, and controlling the first cleaning tank to enter the cleaning fluid, wherein the second cleaning tank is adjacent to the first cleaning tank, and the second cleaning tank is the next cleaning tank after the first cleaning tank; a repetition step, repeating the second control step and the third control step at least once in sequence, and during the repetition, updating the first cleaning tank in the second control step to the second cleaning tank in the previous repetition process, until the first cleaning tank is the last of the plurality of cleaning tanks.

[0114] Optionally, after determining the relationship between the total proportion of impurities and the proportion threshold, before controlling the tank-type cleaning device according to the liquid replacement cycle to replace the cleaning liquid in the cleaning tank, the method further includes: controlling the next silicon wafer to be cleaned to stop entering the first cleaning tank.

[0115] This application also provides a computer program product, which, when executed on a data processing device, is suitable for executing an initialization program having at least the following method steps:

[0116] Step S201: Obtain the total impurity percentage and percentage threshold of the silicon wafer to be cleaned. The total impurity percentage is the sum of the impurity percentages of the multiple silicon wafers to be cleaned. The percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank is allowed to dissolve.

[0117] Step S202: Determine the relationship between the total proportion of the above-mentioned impurities and the above-mentioned proportion threshold.

[0118] Step S203: When the total proportion of the above-mentioned impurities is less than or equal to the above-mentioned proportion threshold, the liquid replacement cycle is determined to be a predetermined duration, wherein the liquid replacement cycle is the time difference between two adjacent replacements of the cleaning liquid in each of the above-mentioned cleaning tanks, and the predetermined duration is 11.5~12.5h.

[0119] Step S204: When the total proportion of the above-mentioned impurities is greater than the above-mentioned proportion threshold, the above-mentioned liquid replacement cycle is calculated based on the above-mentioned predetermined duration, the above-mentioned total proportion of the above-mentioned impurities and the above-mentioned proportion threshold, wherein the above-mentioned liquid replacement cycle is less than the above-mentioned predetermined duration.

[0120] Step S205: Control the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank.

[0121] Optionally, obtaining the impurity area of ​​each of the aforementioned silicon wafers to be cleaned includes: acquiring an image of the silicon wafer to be cleaned to obtain a silicon wafer image; processing the silicon wafer image to extract a target region in the silicon wafer image, wherein the brightness of the target region is different from the brightness of the surface of the silicon wafer to be cleaned; and calculating the area of ​​the target region to obtain the impurity area.

[0122] Optionally, if the total proportion of impurities exceeds the aforementioned proportion threshold, the liquid replacement cycle is calculated based on the predetermined duration, the total proportion of impurities, and the aforementioned proportion threshold, including: according to the formula Calculate the above fluid replacement cycle. ,in, For the aforementioned scheduled duration, This represents the total percentage of the aforementioned impurities. The above percentage threshold.

[0123] Optionally, controlling the tank-type cleaning device according to the above-mentioned fluid replacement cycle to replace the cleaning fluid in the cleaning tank includes: a first control step, controlling the silicon wafer to be cleaned to enter the first cleaning tank for cleaning; a second control step, controlling the first cleaning tank to discharge the cleaning fluid; a third control step, controlling the silicon wafer to be cleaned to enter the second cleaning tank for cleaning, and controlling the first cleaning tank to enter the cleaning fluid, wherein the second cleaning tank is adjacent to the first cleaning tank, and the second cleaning tank is the next cleaning tank after the first cleaning tank; a repetition step, repeating the second control step and the third control step at least once in sequence, and during the repetition, updating the first cleaning tank in the second control step to the second cleaning tank in the previous repetition process, until the first cleaning tank is the last of the plurality of cleaning tanks.

[0124] Optionally, after determining the relationship between the total proportion of impurities and the proportion threshold, before controlling the tank-type cleaning device according to the liquid replacement cycle to replace the cleaning liquid in the cleaning tank, the method further includes: controlling the next silicon wafer to be cleaned to stop entering the first cleaning tank.

[0125] It is obvious to those skilled in the art that the modules or steps of the present invention described above can be implemented using general-purpose computing devices. They can be centralized on a single computing device or distributed across a network of multiple computing devices. They can be implemented using computer-executable program code, and thus can be stored in a storage device for execution by a computing device. In some cases, the steps shown or described can be performed in a different order than those described herein, or they can be fabricated as separate integrated circuit modules, or multiple modules or steps can be fabricated as a single integrated circuit module. Thus, the present invention is not limited to any particular combination of hardware and software.

[0126] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0127] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0128] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0129] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0130] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0131] Memory may include non-persistent memory in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0132] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0133] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0134] As can be seen from the above description, the embodiments of this application achieve the following technical effects:

[0135] 1) The control method of the tank-type cleaning device of this application determines the degree of contamination of a batch of silicon wafers based on the relationship between the total impurity percentage and the percentage threshold. If the total impurity percentage is less than or equal to the percentage threshold, it indicates that the contamination level of the batch of silicon wafers is not high, and the original liquid replacement cycle can be followed to achieve the desired cleaning effect. If the total impurity percentage is greater than the percentage threshold, it indicates that the contamination level of the batch of silicon wafers is high, and the liquid replacement cycle needs to be adjusted according to the degree of contamination. That is, a new liquid replacement cycle is calculated based on the predetermined duration, the total impurity percentage, and the percentage threshold. Since this liquid replacement cycle is shorter than the original predetermined duration, the occurrence rate of impurity contamination of silicon wafers can be reduced, thereby reducing the problem of incomplete cleaning caused by excessive impurity content. This solves the problem in the prior art where, when a series of silicon wafers with a high degree of contamination appear, the cleaning solution cannot be replaced in a timely manner, resulting in unsatisfactory cleaning effects.

[0136] 2) The control device of the tank-type cleaning apparatus of this application can determine the degree of contamination of the batch of silicon wafers based on the relationship between the total impurity percentage and the percentage threshold. If the total impurity percentage is less than or equal to the percentage threshold, it indicates that the contamination level of the batch of silicon wafers is not high, and the original liquid replacement cycle can be followed to achieve the desired cleaning effect. If the total impurity percentage is greater than the percentage threshold, it indicates that the contamination level of the batch of silicon wafers is high, and the liquid replacement cycle needs to be adjusted according to the degree of contamination. That is, a new liquid replacement cycle is calculated based on the predetermined duration, the total impurity percentage, and the percentage threshold. Since this liquid replacement cycle is shorter than the original predetermined duration, the occurrence rate of impurity contamination of silicon wafers can be reduced, thereby reducing the problem of incomplete cleaning caused by excessive impurity content. This solves the problem in the prior art where, when a series of silicon wafers with a high degree of contamination appear, the cleaning solution cannot be replaced in a timely manner, resulting in unsatisfactory cleaning effects.

[0137] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A control method for a tank-type cleaning device, characterized in that, The method is applied to a tank-type cleaning device, the tank-type cleaning device comprising multiple cleaning tanks, and the method includes: The total impurity percentage and percentage threshold of the silicon wafers to be cleaned are obtained. The total impurity percentage is the sum of the impurity percentages of multiple silicon wafers to be cleaned, and the percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank is allowed to dissolve. Determine the relationship between the total proportion of impurities and the proportion threshold; When the total proportion of impurities is less than or equal to the proportion threshold, the liquid replacement cycle is determined to be a predetermined duration, wherein the liquid replacement cycle is the time difference between two adjacent replacements of the cleaning liquid in each of the cleaning tanks, and the predetermined duration is 11.5~12.5h; If the total proportion of impurities is greater than the proportion threshold, the liquid replacement cycle is calculated based on the predetermined duration, the total proportion of impurities, and the proportion threshold, wherein the liquid replacement cycle is less than the predetermined duration. The tank-type cleaning device is controlled according to the fluid replacement cycle to replace the cleaning fluid in the cleaning tank. Obtain the total percentage of impurities on the silicon wafer to be cleaned, including: The wafer routing speed is obtained, wherein the wafer routing speed is the cleaning time of one silicon wafer to be cleaned in one production line of the tank cleaning device, and the unit of the wafer routing speed is seconds / wafer; According to the formula Calculate the total amount of the silicon wafers to be cleaned. ,in, For the predetermined duration, The film arrangement speed; Obtain the impurity area and surface area of ​​each silicon wafer to be cleaned, wherein the surface area is the area of ​​one side surface of the silicon wafer to be cleaned, and the impurity area corresponds one-to-one with the surface area; The ratio of the impurity area to the surface area is calculated to obtain multiple impurity percentages; According to the formula Calculate the total proportion of the impurities. ,in, For the first The percentage of impurities in the silicon wafer to be cleaned. Controlling the tank-type cleaning device according to the fluid replacement cycle to replace the cleaning fluid in the cleaning tank includes: The first control step involves controlling the silicon wafer to be cleaned to enter the first cleaning tank for cleaning. The second control step is to control the first cleaning tank to discharge cleaning fluid. The third control step involves controlling the silicon wafer to be cleaned to enter the second cleaning tank for cleaning, and controlling the first cleaning tank to enter the cleaning solution. The second cleaning tank is adjacent to the first cleaning tank, and the second cleaning tank is the next cleaning tank after the first cleaning tank. Repeat the steps, repeating the second control step and the third control step at least once in sequence, and during the repetition, updating the first cleaning tank in the second control step to the second cleaning tank in the previous repetition, until the first cleaning tank is the last of the plurality of cleaning tanks.

2. The method according to claim 1, characterized in that, Obtaining the percentage threshold includes: Obtain the average impurity percentage of the silicon wafer to be cleaned; According to the formula Calculate the percentage threshold, where, For the predetermined duration, The number of production lines in the tank-type cleaning device. The average impurity percentage is... The surface area is... The percentage threshold is denoted as .

3. The method according to claim 1, characterized in that, Obtaining the impurity area of ​​each of the silicon wafers to be cleaned includes: The image of the silicon wafer to be cleaned is acquired to obtain the silicon wafer image; The silicon wafer image is processed to extract a target region from the silicon wafer image, wherein the brightness of the target region is different from the brightness of the surface of the silicon wafer to be cleaned; The area of ​​the target region is calculated to obtain the area of ​​the impurities.

4. The method according to claim 1, characterized in that, When the total proportion of impurities exceeds the threshold, the liquid replacement cycle is calculated based on the predetermined duration, the total proportion of impurities, and the threshold, including: According to the formula Calculate the fluid exchange cycle ,in, For the predetermined duration, The percentage of impurities is the total amount. The percentage threshold is denoted as .

5. The method according to claim 1, characterized in that, After determining the relationship between the total impurity percentage and the percentage threshold, before controlling the tank-type cleaning device according to the liquid replacement cycle to replace the cleaning solution in the cleaning tank, the method further includes: The next silicon wafer to be cleaned is prevented from entering the first cleaning tank.

6. A control device for a tank-type cleaning apparatus, characterized in that, The tank-type cleaning device includes multiple cleaning tanks, and the control device includes: The acquisition unit is used to acquire the total impurity percentage and percentage threshold of the silicon wafer to be cleaned. The total impurity percentage is the sum of the impurity percentages of multiple silicon wafers to be cleaned, and the percentage threshold is the maximum area of ​​the impurities that the cleaning liquid in the cleaning tank can bear. The first determining unit is used to determine the relationship between the total proportion of impurities and the proportion threshold. The second determining unit is used to determine the liquid replacement cycle as a predetermined duration when the total proportion of impurities is less than or equal to the proportion threshold, wherein the liquid replacement cycle is the cycle of replacing the cleaning liquid in each of the cleaning tanks, and the predetermined duration is 11.5~12.5h. A calculation unit is configured to calculate the liquid replacement cycle based on the predetermined duration, the total impurity percentage, and the percentage threshold when the total impurity percentage is greater than the percentage threshold, wherein the liquid replacement cycle is less than the predetermined duration. The control unit is configured to control the tank-type cleaning device according to the fluid replacement cycle, so as to replace the cleaning fluid in the cleaning tank. The acquisition unit includes a first acquisition module, a first calculation module, a second acquisition module, a second calculation module, and a third calculation module. The first acquisition module is used to acquire the wafer stacking speed, where the wafer stacking speed is the cleaning time of one silicon wafer to be cleaned in one production line of the tank-type cleaning device, and the unit of the wafer stacking speed is seconds per wafer. The first calculation module is used to calculate the wafer stacking speed according to the formula... Calculate the total amount of the silicon wafers to be cleaned. ,in, For the predetermined duration, The wafer stacking speed is defined as follows: the second acquisition module is used to acquire the impurity area and surface area of ​​each silicon wafer to be cleaned, wherein the surface area is the area of ​​one side surface of the silicon wafer to be cleaned, and the impurity area corresponds one-to-one with the surface area; the second calculation module is used to calculate the ratio of the impurity area to the surface area to obtain multiple impurity percentages; the third calculation module is used to calculate the impurity percentage according to the formula... Calculate the total proportion of the impurities. ,in, For the first The percentage of impurities in the silicon wafer to be cleaned. The control unit includes a first control module, a second control module, a third control module, and a repeating module. The first control module is used in a first control step to control the silicon wafer to be cleaned to enter a first cleaning tank for cleaning. The second control module is used in a second control step to control the first cleaning tank to discharge cleaning fluid. The third control module is used in a third control step to control the silicon wafer to be cleaned to enter a second cleaning tank for cleaning, and to control the first cleaning tank to enter cleaning fluid. The second cleaning tank is adjacent to the first cleaning tank and is the next cleaning tank after the first cleaning tank. The repeating module is used in a repeating step to sequentially repeat the second control step and the third control step at least once. During the repeating process, the first cleaning tank in the second control step is updated to the second cleaning tank in the previous repeating process, until the first cleaning tank is the last of the plurality of cleaning tanks.

7. A computer-readable storage medium, characterized in that, The computer-readable storage medium includes a stored program, wherein, when the program is executed, it controls the device on which the computer-readable storage medium is located to perform the method according to any one of claims 1 to 5.

8. A tank-type cleaning system, characterized in that, include: Tank-type cleaning equipment; A control device for a trough-type cleaning apparatus is communicatively connected to the trough-type cleaning apparatus, and the control device for the trough-type cleaning apparatus is used to perform the method described in any one of claims 1 to 5.

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