Auxiliary device in processing process of large-size lithium niobate wafer

Abstract

The invention discloses an auxiliary device in a large-size lithium niobate wafer processing process, which comprises a shell, a double-discharge-port liquid collecting tank is fixed at one end in the shell, and a hollow communicating pipe is integrally formed at the center position of the bottom of the double-discharge-port liquid collecting tank; a vacuum multi-point adsorption platform communicating with the upper end of the hollow communicating pipe is installed at the top end of the double-outlet liquid collecting tank, and a gap part is arranged between the outer wall of the periphery of the vacuum multi-point adsorption platform and the inner wall of the shell. Stable clamping is provided under the condition that the surface of the wafer is not damaged, displacement or deformation of the wafer in the machining process is avoided, the defects of edge breakage, cracks and the like are effectively reduced, meanwhile, waste liquid and waste chips generated in the grinding and polishing process flow into the double-discharging-opening liquid collecting groove through the vacuum multi-point-position adsorption platform under the gravity effect, and the machining efficiency is improved. Chippings and waste liquid generated in the machining process are timely discharged, the chippings are prevented from scratching the surface of the wafer, and the waste liquid is prevented from polluting the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal material processing equipment, and in particular to an auxiliary device for use in the processing of large-size lithium niobate wafers, which is suitable for processing steps such as cutting, grinding, and polishing of lithium niobate wafers. Background Art

[0002] During the processing of large lithium niobate wafers, auxiliary fixtures play a critical supporting and positioning role. Their primary function is to ensure the wafer maintains a stable and precise position during cutting, grinding, and polishing, thereby improving processing quality and efficiency. Due to the high hardness and brittleness of lithium niobate wafers, they are prone to cracking or deformation. A properly designed fixture can effectively mitigate these problems. The auxiliary fixture typically consists of a clamping mechanism, a support platform, guides, and protective measures. The clamping mechanism utilizes mechanical clamping, applying a controlled clamping force via mechanical elements such as screws, springs, or levers to securely secure the wafer to the support platform. The design must consider the wafer's size, thickness, and material properties to ensure the clamping force is sufficient to stabilize the wafer without causing excessive stress that could damage it. The support platform provides a flat, sturdy foundation for the wafer, preventing it from shifting or deforming during processing. Guides guide the movement of cutting tools or grinding wheels, ensuring machining accuracy and consistency. Currently, conventional clamping devices mostly use mechanical clamping, which can be prone to insufficient positioning accuracy when clamping large lithium niobate wafers. Mechanical clamping devices typically rely on mechanical components such as screws, springs, or levers. While simple in structure, they are limited by machining precision and assembly errors, making it difficult to achieve extremely high positioning accuracy. Furthermore, the clamping force is often concentrated in certain areas, causing localized stress on the wafer surface and even cracking or deformation. Especially for large wafers, even slight deviations can cause the wafer to shift or deform during clamping, affecting subsequent machining accuracy. Furthermore, existing fixtures lack dedicated chip and liquid removal channels. The grinding and polishing process generates a large amount of debris and liquid waste. If these debris and waste liquid are not removed promptly, they can easily scratch the wafer surface, affecting surface quality. If waste liquid remains for extended periods, it can contaminate the wafer surface and even cause corrosion or chemical reactions, seriously affecting machining accuracy and wafer performance. Summary of the Invention

[0003] The purpose of the present invention is to provide an auxiliary device for the processing of large-size lithium niobate wafers. The large-size lithium niobate wafers to be processed are placed on a vacuum multi-point adsorption platform at the top of a double-row liquid collection tank and kept stable. Then, multiple threaded presses simultaneously apply force downward and press out the edge of the lithium niobate wafer. Then, four flexible pneumatic clamping mechanisms press against the edge of the lithium niobate wafer at the side to provide stable clamping without damaging the surface of the wafer. At the same time, the waste liquid and waste chips generated during the grinding and polishing process flow into the double-row liquid collection tank through the vacuum multi-point adsorption platform under the action of gravity, and the debris and waste liquid generated during the processing are discharged in time, thereby solving the problems raised in the above-mentioned background technology.

[0004] To achieve the above-mentioned object, the present invention provides the following technical solution: an auxiliary device for processing large-size lithium niobate wafers, comprising: A shell, a double-row liquid collecting tank is fixed at one end of the interior of the shell, and a hollow connecting pipe is integrally formed at the center position of the bottom of the double-row liquid collecting tank, a vacuum multi-point adsorption platform connected to the upper end of the hollow connecting pipe is installed on the top of the double-row liquid collecting tank, a gap is provided between the outer wall of the vacuum multi-point adsorption platform and the inner wall of the shell, a lower chassis is fixed to one side of the bottom of the shell, and a vacuum negative pressure station connected to the lower end of the hollow connecting pipe is installed inside the lower chassis; Flexible pneumatic clamping mechanism, four of the flexible pneumatic clamping mechanisms are installed at the edge of the top of the vacuum multi-point adsorption platform, a threaded press is installed on the top of the vacuum multi-point adsorption platform between two adjacent flexible pneumatic clamping mechanisms, and a jet chip removal structure is installed on the left and right outer walls of the shell. A PLC control panel is installed on one side of the shell surface, and the output end of the PLC control panel is electrically connected to the vacuum negative pressure station and the input end of the flexible pneumatic clamping mechanism respectively.

[0005] Preferably, the vacuum multi-point adsorption platform includes an upper closing hollow platform installed at the top opening position of the double-row liquid collecting tank, a circular protrusion integrally formed at the center position of the top of the upper closing hollow platform, and a conical connecting cover integrally formed at the center position of the bottom end of the upper closing hollow platform. The lower end of the conical connecting cover and the upper end of the hollow connecting tube are concentrically connected, and a plurality of vacuum suction cups are provided in an internal annular array of the circular protrusion, and the lower end of the vacuum suction cup extends to the interior of the conical connecting cover.

[0006] Preferably, a cross calibration groove is provided on the upper surface of the circular protrusion, and a scale line is inlaid on the upper surface of the circular protrusion on one side of the cross calibration groove.

[0007] Preferably, pads are fixed at the corners of the top of the double-row liquid collecting trough, the top of the pads and the bottom of the upper hollow platform are connected to each other, and a liquid inlet is provided between the upper hollow platform and the double-row liquid collecting trough.

[0008] Preferably, downwardly recessed chip collecting cavities are provided on both sides of the double-row liquid collecting trough, drainage pipes communicating with the chip collecting cavities are installed on both sides of the bottom end of the double-row liquid collecting trough, and a filter disc is installed at the bottom of the chip collecting cavity.

[0009] Preferably, the vacuum negative pressure station includes a gas tank installed on the inner wall of one side of the lower chassis, a vacuum pump installed on the outer wall of one side of the gas tank, and a pressure gauge installed on one side of the bottom end of the lower chassis. The air inlet end of the pressure gauge is installed with an air guide pipe, one end of the air guide pipe extends to the interior of the gas tank, the air inlet end of the vacuum pump is connected to the air outlet end on the outer wall of the gas tank through a pipeline, and the upper end of the gas tank is fixedly connected to the lower end of the hollow connecting pipe.

[0010] Preferably, the upper hollow platform is made of aluminum alloy, and the upper surface of the upper hollow platform is anodized.

[0011] Preferably, the jet-type chip removal structure includes a blow pipe movably installed on both sides of the top of the shell, a bellows installed at the air inlet end of the blow pipe, and a U-shaped tube group installed on the outer wall of the shell, and the blow pipe is located above the upper hollow platform.

[0012] Preferably, a disc-shaped two-way joint is fixed on the left and right outer walls of the shell, one end of the disc-shaped two-way joint is connected to one end of the bellows, and the other end of the disc-shaped two-way joint is connected to one end of the U-shaped tube group, and switch valves are installed on both sides of the surface of the U-shaped tube group through three-way pipes.

[0013] Preferably, the flexible pneumatic clamping mechanism includes a base installed at the top edge of the circular protrusion, a cylinder installed on the outer wall of one side of the base, and a T-shaped plate fixed to the top of the cylinder piston rod. A silicone chuck is fixed on the outer wall of one side of the T-shaped plate through two steel columns, and an inner recess is provided on the outer wall of the silicone chuck away from the T-shaped plate.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows: the auxiliary device for the processing of large-sized lithium niobate wafers is provided with a double-row liquid collection tank, a vacuum multi-point adsorption platform, a vacuum negative pressure station, a PLC control panel, and four threaded presses at the corners of the platform, four flexible pneumatic clamping mechanisms and other structures that cooperate with each other. The large-sized lithium niobate wafer to be processed is placed on the vacuum multi-point adsorption platform at the top of the double-row liquid collection tank and kept stable. After that, the multiple threaded presses simultaneously apply force downward and press out the edge of the lithium niobate wafer. Then, the four flexible pneumatic clamping mechanisms press against the edge of the lithium niobate wafer from the side to provide stable clamping without damaging the wafer surface, thereby avoiding displacement or deformation of the wafer during processing and effectively reducing the occurrence of defects such as edge chipping and cracks. At the same time, the waste liquid and waste chips generated during the grinding and polishing process flow into the double-row liquid collection tank through the vacuum multi-point adsorption platform under the action of gravity, so as to timely discharge the debris and waste liquid generated during the processing, thereby avoiding the debris scratching the wafer surface and the waste liquid from polluting the wafer, and providing a clean environment for wafer processing; The vacuum negative pressure station and vacuum multi-point adsorption platform first provide a large-area, evenly distributed negative pressure adsorption force. This force acts on the entire lower surface of the wafer, "gently" attaching the wafer to the platform, effectively overcoming the slight bending caused by the wafer's own weight and providing preliminary anti-translational and anti-rotation capabilities. Multiple threaded hold-down tools simultaneously apply downward pressure to the wafer edge. Their core function is to precisely control the wafer's position on the Z axis (vertical direction) and prevent it from tilting or jumping, reducing the tendency of the wafer to twist and deform due to uneven pressure. Four flexible pneumatic clamping mechanisms press against the wafer edge from the side to cope with the tangential force (friction) and vibration generated during processing, allowing the wafer to have slight thermal expansion or elastic deformation space, avoiding stress concentration and potential edge chipping and cracking caused by rigid clamping. By combining lateral constraints with vacuum adsorption and downward pressure constraints, all-round, low-stress constraints on the wafer in the X, Y, and Z axes and around the axis of rotation are achieved, ensuring the wafer maintains a stable position during dynamic processes such as high-speed rotation and high-pressure grinding and polishing. Secondly, a gap is designed between the vacuum multi-point adsorption platform and the outer shell to allow liquid and small debris to pass through. The waste liquid and debris generated during the grinding and polishing process naturally fall under the action of gravity and flow through the gap to the inlet of the double-row liquid collection tank, so as to physically isolate the waste liquid and debris from the chip processing surface and quickly remove them. Once the waste debris is generated, it is guided away from the chip area and discharged through the liquid collection tank, completely avoiding the surface scratches caused by the flying hard debris rolling and crushing between the tool and the chip in the traditional open fixture environment. At the same time, the waste liquid containing chemical substances is discharged in time to prevent its continuous corrosion, pollution or chemical reaction on the chip surface, thereby ensuring the chemical purity of the chip and the ultimate electro-optical performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of the three-dimensional structure of the present invention Figure 1 ; Figure 2 Schematic diagram of the three-dimensional structure of the present invention Figure 2 ; Figure 3 Schematic diagram of the three-dimensional structure of the present invention Figure 3 ; Figure 4 It is a schematic diagram of the side cross-sectional structure of the present invention; Figure 5 It is a schematic diagram of the three-dimensional cross-sectional structure of the present invention; Figure 6 This is a schematic diagram of a three-dimensional cross-sectional structure of the lower chassis according to the second embodiment of the present invention; Figure 7 Schematic diagram of the three-dimensional structure of the double-row liquid collecting tank of the second embodiment of the present invention Figure 1 ; Figure 8 Schematic diagram of the three-dimensional structure of the double-row liquid collecting tank of the second embodiment of the present invention Figure 2 ; Figure 9 This is a schematic diagram of the three-dimensional structure of the air jet chip removal structure according to the third embodiment of the present invention; Figure 10 This is a schematic diagram of the three-dimensional structure of the flexible pneumatic clamping mechanism of Example 4 of the present invention.

[0016] Figure: 1, housing; 2, lower chassis; 3, vacuum negative pressure station; 301, gas tank; 302, vacuum pump; 303, pressure gauge; 304, air guide tube; 4, double-drain liquid collection tank; 401, liquid inlet; 402, foot pad; 403, chip collection chamber; 404, filter plate; 405, liquid discharge pipe; 5, vacuum multi-point adsorption platform; 501, upper hollow platform; 502, circular raised part; 5021, cross calibration groove; 5022, engraved Degree line; 503, vacuum suction cup; 504, tapered connection cover; 6, hollow connecting pipe; 7, flexible pneumatic clamping mechanism; 701, base; 702, cylinder; 703, T-plate; 704, silicone chuck; 8, threaded press; 9, jet chip removal structure; 901, U-shaped pipe group; 902, switch valve; 903, disc-shaped two-way joint; 904, bellows; 905, blowpipe; 10, PLC control panel; 11, gap part. DETAILED DESCRIPTION

[0017] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0018] Embodiment 1, by Figures 1 to 5 The present invention includes a shell 1, a double-row liquid collecting tank 4 is fixed at one end inside the shell 1, and a hollow connecting pipe 6 is integrally formed at the center position of the bottom of the double-row liquid collecting tank 4, a vacuum multi-point adsorption platform 5 connected to the upper end of the hollow connecting pipe 6 is installed on the top of the double-row liquid collecting tank 4, and a gap 11 is provided between the outer wall of the vacuum multi-point adsorption platform 5 and the inner wall of the shell 1, a lower chassis 2 is fixed to one side of the bottom of the shell 1, and a vacuum negative pressure station 3 connected to the lower end of the hollow connecting pipe 6 is installed inside the lower chassis 2; Flexible pneumatic clamping mechanism 7, four flexible pneumatic clamping mechanisms 7 are installed at the edge position of the top of the vacuum multi-point adsorption platform 5, and a threaded press 8 is installed on the top of the vacuum multi-point adsorption platform 5 between two adjacent flexible pneumatic clamping mechanisms 7. Jet-type chip removal structures 9 are installed on the left and right outer walls of the outer shell 1, and a PLC control panel 10 is installed on one side of the surface of the outer shell 1. The output end of the PLC control panel 10 is electrically connected to the input end of the vacuum negative pressure station 3 and the flexible pneumatic clamping mechanism 7 respectively.

[0019] Example 2, based on Example 1, Figure 6 、 Figure 7 and Figure 8 It is given that the vacuum multi-point adsorption platform 5 includes an upper closing hollow platform 501 installed at the top opening position of the double-row liquid collecting tank 4, a circular protrusion 502 integrally formed at the center position of the top of the upper closing hollow platform 501, and a cone-shaped connecting cover 504 integrally formed at the center position of the bottom end of the upper closing hollow platform 501. The lower end of the cone-shaped connecting cover 504 is concentrically connected to the upper end of the hollow connecting pipe 6. The upper closing hollow platform 501 is made of aluminum alloy. The upper surface of the upper closing hollow platform 501 is anodized. The internal annular array of the circular protrusion 502 is provided with a number of vacuum suction cups 503. The vacuum suction cups 503 The lower end extends to the interior of the tapered connection cover 504. The staff places the lithium niobate wafer to be clamped and fixed at the center position of the top of the circular protrusion 502. When the vacuum negative pressure station 3 is controlled by the PLC control panel 10 to generate vacuum negative pressure suction, since the air inlet end of the vacuum suction cup 503 is located in the tapered connection cover 504 and connected to the hollow connecting pipe 6, each vacuum suction cup 503 generates negative pressure suction, thereby achieving non-mechanical contact initial fixation of multiple positions of the wafer through multi-point adsorption technology, providing a stable reference surface for subsequent mechanical clamping, and ensuring that the wafer will not deviate or vibrate during the processing process, thereby improving processing accuracy; A cross calibration groove 5021 is formed on the upper surface of the circular protrusion 502. A scale line 5022 is inlaid on the upper surface of the circular protrusion 502 on one side of the cross calibration groove 5021. By adjusting the positional relationship between the wafer and the cross calibration groove 5021 so that the edge of the wafer is parallel to the edge of the cross calibration groove 5021, fast and accurate positioning is achieved. The scale line 5022 is used to intuitively display the placement position of the wafer, helping the operator to determine whether the wafer is properly placed. The corners of the top of the double-row liquid collecting tank 4 are all fixed with pads 402. The top of the pads 402 and the bottom of the upper hollow platform 501 are connected to each other. A liquid inlet 401 is provided between the upper hollow platform 501 and the double-row liquid collecting tank 4. The pads 402 are used to raise the vacuum multi-point adsorption platform 5 and form a liquid inlet 401 between the upper hollow platform 501 and the double-row liquid collecting tank 4. Both sides of the double-row liquid collecting tank 4 are provided with a downwardly concave chip collecting chamber 403, and both sides of the bottom end of the double-row liquid collecting tank 4 are installed with a drainage pipe 405 that is interconnected with the chip collecting chamber 403. A filter plate 404 is installed at the bottom of the chip collecting chamber 403. A gap portion 11 is formed between the outer wall of the upper closing hollow platform 501 and the inner wall of the shell 1. The waste liquid and waste chips generated during the processing enter the double-row liquid collecting tank 4 through the gap portion 11 and the liquid inlet portion 401. At this time, the waste liquid and waste chips pass through the double-row liquid collecting tank 4. The waste liquid flows through the chip collection chamber 403 to the filter plate 404, which separates the waste liquid and waste chips into solid and liquid forms. That is, the waste chips are retained in the chip collection chamber 403, while the waste liquid continues to be discharged through the filter plate 404 and the drain pipe 405, thereby achieving effective separation and treatment of the chips and waste liquid. The waste liquid and chips containing abrasive particles are immediately removed from the wafer processing area, completely preventing the hard particles from rolling and scratching the wafer surface during the grinding and polishing process, and preventing surface corrosion pollution caused by the retention of chemical waste liquid. The vacuum negative pressure station 3 includes a gas tank 301 mounted on the inner wall of one side of the lower chassis 2, a vacuum pump 302 mounted on the outer wall of one side of the gas tank 301, and a pressure gauge 303 mounted on one side of the bottom end of the lower chassis 2. An air guide pipe 304 is installed at the air inlet end of the pressure gauge 303, one end of the air guide pipe 304 extends into the interior of the gas tank 301, the air inlet end of the vacuum pump 302 is connected to the air outlet end on the outer wall of the gas tank 301 through a pipeline, and the upper end of the gas tank 301 is fixedly connected to the lower end of the hollow connecting pipe 6; The vacuum pump 302 is controlled by the PLC control panel 10 to operate. The vacuum pump 302 continuously extracts air from the gas tank 301, the hollow connecting tube 6, and the tapered connecting cover 504, so that each vacuum suction cup 503 generates negative pressure suction. During this process, the pressure gauge 303 is connected to the gas tank 301 through the air guide tube 304 to determine the pressure in the gas tank 301, ensuring that the vacuum pressure of the vacuum multi-point adsorption platform 5 and the gas tank 301 remains within a stable range during the processing, avoiding the impact of unstable pressure on the chip processing quality.

[0020] Example 3, based on Example 2, Figure 9 It is given that the jet-type chip removal structure 9 includes a blowpipe 905 movably mounted on both sides of the top of the shell 1, a bellows 904 mounted on the air inlet end of the blowpipe 905, and a U-shaped tube group 901 mounted on the outer wall of the shell 1. The blowpipe 905 is located above the upper hollow platform 501. A disc-shaped two-way joint 903 is fixed on the left and right outer walls of the shell 1. One end of the disc-shaped two-way joint 903 is interconnected with one end of the bellows 904, and the other end of the disc-shaped two-way joint 903 is interconnected with one end of the U-shaped tube group 901. Both sides of the surface of the U-shaped tube group 901 are A switch valve 902 is installed through a three-way pipe. After completing the processing, the staff can connect the switch valve 902 to an external air pump and use the external air pump to generate a high-speed airflow. This part of the high-speed airflow enters the U-shaped tube group 901 through the switch valve 902, and enters the blowpipe 905 through the disc-shaped two-way joint 903 and the bellows 904, and is ejected from the blowpipe 905. The blowpipe 905 is manually controlled to impact the edge of the chip and the circular protrusion 502 at a specific angle, and the kinetic energy of the airflow is used to roll up the residual particles, thereby reducing pollution or water mark defects caused by liquid residue.

[0021] Example 4, based on Example 2, Figure 10 It is given that the flexible pneumatic clamping mechanism 7 includes a base 701 installed at the top edge of the circular protrusion 502, a cylinder 702 installed on the outer wall of one side of the base 701, and a T-shaped plate 703 fixed to the top of the piston rod of the cylinder 702. A silicone chuck 704 is fixed to the outer wall of one side of the T-shaped plate 703 through two steel columns. The silicone chuck 704 is provided with an inner recess on the outer wall away from the T-shaped plate 703. The cylinder 702 is controlled by the PLC control panel 10 to push the T-shaped plate 703 and the silicone chuck 704 toward the edge of the outer wall of the chip until multiple flexible pneumatic clamping mechanisms 7 complete the clamping of the chip.

[0022] When the embodiment of the present application is in use, the staff first thoroughly cleans the surface of the vacuum multi-point adsorption platform 5 and the double-row liquid collection tank 4 to ensure that there are no residual debris, water stains or oil stains to prevent contamination of the lithium niobate wafer or blockage of the drainage channel. At the same time, the operating status of the vacuum negative pressure station 3 and the sealing of the pipeline are checked. Then, the vacuum negative pressure station 3 is activated through the PLC control panel 10 to make the vacuum multi-point adsorption platform 5 generate a uniformly distributed negative pressure adsorption force. The surface of the vacuum multi-point adsorption platform 5 forms a stable "air cushion" adsorption effect on standby; the lithium niobate wafer is stably placed on the central area of ​​the vacuum multi-point adsorption platform 5 on the top of the double-row liquid collection tank 4. The staff should ensure that the wafer is correctly aligned to avoid deviation , the lower surface of the wafer is evenly fitted to the platform under the action of negative pressure, overcoming its own weight deformation and achieving preliminary fixation. At this time, the wafer has been restricted from moving in the X / Y plane and rotating around the Z axis, but the vertical direction and the edge are still in a free state; the staff manually controls the four threaded presses 8 at the corners of the vacuum multi-point adsorption platform 5 to rotate downward synchronously and slowly until the lower end of the threaded press 8 gently contacts the upper surface of the wafer edge, and controls the downward pressure through the precise feed of the thread to evenly apply a vertical downward restraining force to prevent the wafer from warping or jumping in subsequent processing, while avoiding excessive point load; after confirming that the vertical pressing is in place, the four flexible pneumatic clamping mechanisms 7 are started through the PLC control panel 10, The flexible pneumatic clamping mechanism 7 slowly and steadily presses against the edge of the wafer horizontally from the side to provide a continuous, uniform and buffered lateral restraint force, effectively resisting the tangential friction and vibration generated during processing, suppressing the risk of displacement and not causing stress concentration. Finally, visually and lightly check whether the wafer is completely flat against the vacuum multi-point adsorption platform 5, each threaded press 8 and the flexible pneumatic clamping mechanism 7 to see whether they are in uniform contact without overhang, and whether there is no visible deformation or pressure on the edge of the wafer. After completing the above verification, the staff starts the grinding or polishing procedure, and the waste liquid and debris generated during processing immediately flow into the double-row liquid collection tank 4 through the gap 11 between the vacuum multi-point adsorption platform 5 and the shell 1, and are collected under the action of gravity. The liquid is efficiently discharged into the double-discharge liquid collection tank 4; after the processing is completed, the four flexible pneumatic clamping mechanisms 7 are released through the PLC control panel 10, so that they are smoothly retracted and separated from the edge of the wafer, and the four threaded presses 8 are synchronously and slowly loosened until their lower ends are completely lifted off the surface of the lithium niobate wafer. Finally, the vacuum negative pressure station 3 is closed, the adsorption force of the vacuum multi-point adsorption platform 5 on the wafer is released, and a manual jet chip removal structure 9 is used to spray clean dry gas from a safe distance onto the edge of the lithium niobate wafer and the surface of the vacuum multi-point adsorption platform 5 to purge any trace dust or droplets that may remain, further ensuring that there is no pollution when taking the wafer. Finally, the lithium niobate wafer is carefully removed with special tools to complete the entire clamping and processing cycle.

[0023] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0024] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. An auxiliary device for processing large-size lithium niobate wafers, characterized in that: include: A shell (1), wherein a double-row liquid collecting tank (4) is fixed at one end inside the shell (1), and a hollow connecting pipe (6) is integrally formed at the center position of the bottom of the double-row liquid collecting tank (4), a vacuum multi-point adsorption platform (5) connected to the upper end of the hollow connecting pipe (6) is installed at the top of the double-row liquid collecting tank (4), a gap portion (11) is provided between the outer wall of the vacuum multi-point adsorption platform (5) and the inner wall of the shell (1), a lower case (2) is fixed on one side of the bottom of the shell (1), and a vacuum negative pressure station (3) connected to the lower end of the hollow connecting pipe (6) is installed inside the lower case (2); A flexible pneumatic clamping mechanism (7), four of the flexible pneumatic clamping mechanisms (7) are installed at the edge of the top of the vacuum multi-point adsorption platform (5), a threaded press (8) is installed on the top of the vacuum multi-point adsorption platform (5) between two adjacent flexible pneumatic clamping mechanisms (7), an air jet chip removal structure (9) is installed on the left and right outer walls of the shell (1), a PLC control panel (10) is installed on one side of the surface of the shell (1), and the output end of the PLC control panel (10) is electrically connected to the vacuum negative pressure station (3) and the input end of the flexible pneumatic clamping mechanism (7), respectively.

2. The auxiliary device for processing large-size lithium niobate wafers according to claim 1, characterized in that: The vacuum multi-point adsorption platform (5) comprises an upper closing hollow platform (501) installed at the top opening position of the double-row liquid collecting tank (4), a circular protrusion (502) integrally formed at the center position of the top of the upper closing hollow platform (501), and a cone-shaped connecting cover (504) integrally formed at the center position of the bottom end of the upper closing hollow platform (501), the lower end of the cone-shaped connecting cover (504) and the upper end of the hollow connecting pipe (6) are concentrically connected, and a plurality of vacuum suction cups (503) are provided in an annular array inside the circular protrusion (502), and the lower ends of the vacuum suction cups (503) extend to the interior of the cone-shaped connecting cover (504).

3. The auxiliary device for processing large-size lithium niobate wafers according to claim 2, characterized in that: A cross calibration groove (5021) is provided on the upper surface of the circular protrusion (502), and a scale mark (5022) is inlaid on the upper surface of the circular protrusion (502) on one side of the cross calibration groove (5021).

4. The auxiliary device for processing large-size lithium niobate wafers according to claim 2, characterized in that: The corners of the top of the double-row liquid collecting trough (4) are all fixed with pads (402), the top of the pads (402) and the bottom of the upper closing hollow platform (501) are connected to each other, and a liquid inlet (401) is provided between the upper closing hollow platform (501) and the double-row liquid collecting trough (4).

5. The auxiliary device for processing large-size lithium niobate wafers according to claim 4, characterized in that: Both sides of the double-row liquid collecting trough (4) are provided with downwardly recessed chip collecting cavities (403), and both sides of the bottom end of the double-row liquid collecting trough (4) are provided with drainage pipes (405) that are interconnected with the chip collecting cavities (403), and a filter disc (404) is installed at the bottom of the chip collecting cavity (403).

6. The auxiliary device for processing large-size lithium niobate wafers according to claim 2, characterized in that: The vacuum negative pressure station (3) comprises a gas tank (301) mounted on the inner wall of one side of the lower chassis (2), a vacuum pump (302) mounted on the outer wall of one side of the gas tank (301), and a pressure gauge (303) mounted on one side of the bottom end of the lower chassis (2). An air guide pipe (304) is mounted on the air inlet end of the pressure gauge (303), one end of the air guide pipe (304) extends into the interior of the gas tank (301), the air inlet end of the vacuum pump (302) is connected to the air outlet end on the outer wall of the gas tank (301) through a pipeline, and the upper end of the gas tank (301) is fixedly connected to the lower end of the hollow connecting pipe (6).

7. The auxiliary device for processing large-size lithium niobate wafers according to claim 2, characterized in that: The upper hollow platform (501) is made of an aluminum alloy component, and the upper surface of the upper hollow platform (501) is anodized.

8. The auxiliary device for processing large-size lithium niobate wafers according to claim 2, characterized in that: The jet-type chip removal structure (9) comprises a blowpipe (905) movably mounted on both sides of the top end of the housing (1), a bellows (904) mounted on the air inlet end of the blowpipe (905), and a U-shaped tube group (901) mounted on the outer wall of the housing (1), wherein the blowpipe (905) is located above the upper hollow platform (501).

9. The auxiliary device for processing large-size lithium niobate wafers according to claim 8, characterized in that: A disc-shaped two-way joint (903) is fixed to both the left and right outer walls of the housing (1); one end of the disc-shaped two-way joint (903) is connected to one end of the bellows (904); the other end of the disc-shaped two-way joint (903) is connected to one end of the U-shaped tube group (901); and switch valves (902) are installed on both sides of the surface of the U-shaped tube group (901) via three-way pipes.

10. The auxiliary device for processing large-size lithium niobate wafers according to claim 2, characterized in that: The flexible pneumatic clamping mechanism (7) comprises a base (701) mounted at the top edge of the circular protrusion (502), a cylinder (702) mounted on the outer wall of one side of the base (701), and a T-shaped plate (703) fixed to the top end of the piston rod of the cylinder (702), a silicone chuck (704) being fixed to the outer wall of one side of the T-shaped plate (703) via two steel columns, and an inner concave portion being provided on the outer wall of the silicone chuck (704) away from the T-shaped plate (703).

Images