Electrostatic chuck and plasma processing apparatus

Abstract

The application relates to the technical field of semiconductor equipment, and provides an electrostatic chuck and a plasma processing device, the electrostatic chuck is applied to the plasma processing device, and the electrostatic chuck comprises an insulating substrate, a heating part and a micro-nano heat conduction part; the insulating substrate has a bearing table for bearing a wafer; the inside of the insulating substrate has a containing cavity; and a heat insulation fluid is stored in the containing cavity; the heating part is arranged in the containing cavity and embedded in the heat insulation fluid, so as to block the heat conduction heat bridge between the heating part and the insulating substrate; the micro-nano heat conduction part is arranged in the insulating substrate and used for connecting the heat conduction heat bridge between the heating part and the bearing table of the insulating substrate; and a first part of the micro-nano heat conduction part arranged in the containing cavity is embedded in the heat insulation fluid, so as to block the radial heat conduction heat bridge between the first part of the micro-nano heat conduction part and the insulating substrate. The electrostatic chuck is used for adjusting the heat conduction path of the wafer surface.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to an electrostatic chuck and plasma processing apparatus. Background Technology

[0002] Currently, electrostatic chucks typically use embedded heating wires in fixed areas within their interiors, allowing temperature control only in these fixed locations. Because this design results in a fixed heat conduction path and distribution, it's difficult to flexibly adjust the speed and range of heat propagation within the substrate according to actual process requirements. This makes precise temperature control of the wafer under different process conditions difficult, thus affecting process consistency and product quality. Summary of the Invention

[0003] The purpose of this invention is to provide an electrostatic chuck and a plasma processing device, wherein the electrostatic chuck is used to adjust the heat conduction path and distribution on the surface of a wafer.

[0004] According to a first aspect of the present invention, an electrostatic chuck is provided for use in a plasma processing apparatus, the electrostatic chuck comprising:

[0005] An insulating substrate having a support stage for supporting a wafer, and an internal cavity containing a thermally insulating fluid.

[0006] A heating element is disposed in the receiving cavity and embedded in the heat-insulating fluid to block the heat conduction thermal bridge between the heating element and the insulating substrate;

[0007] A micro / nano thermally conductive part is disposed within the insulating substrate and serves to connect the heat conduction bridge between the heating part and the support stage of the insulating substrate. The first part of the micro / nano thermally conductive part is embedded in the insulating fluid within the receiving cavity to block the radial heat conduction bridge between the first part of the micro / nano thermally conductive part and the insulating substrate. This allows the heat generated when the heating part is loaded with current to be axially guided through the micro / nano thermally conductive part to the support stage of the insulating substrate to heat the wafer on the support stage.

[0008] Optionally, a plurality of micro / nano thermal conductive parts are provided, and the number of heating parts is set to one, with one heating part connected to a plurality of micro / nano thermal conductive parts.

[0009] Optionally, a plurality of micro / nano thermal conductive parts and a plurality of heating parts are provided; one heating part is connected to a plurality of micro / nano thermal conductive parts, or a plurality of heating parts are connected to a plurality of micro / nano thermal conductive parts in a one-to-one correspondence.

[0010] Optionally, a plurality of the micro-nano thermal conductive parts are arranged in an array; the heating part is located between the rows and columns of the micro-nano thermal conductive part array, wherein each of the heating parts is connected to at least two of the micro-nano thermal conductive parts located in the same row or column.

[0011] Optionally, the insulating substrate has a central axis perpendicular to the bearing surface of the support platform, and a plurality of the micro-nano thermally conductive parts are arranged around the central axis on the insulating substrate, and each heating part is connected to at least two of the micro-nano thermally conductive parts.

[0012] Optionally, there is a gap between the ends of two adjacent micro / nano thermally conductive parts near the support stage, the size of the gap being greater than or equal to 0.5 μm and less than or equal to 1.5 μm.

[0013] Optionally, the end of the micro / nano thermally conductive part near the support stage extends within the support stage in a direction away from the receiving cavity, and the end of the micro / nano thermally conductive part near the support stage is flush with the support surface of the support stage.

[0014] Optionally, the end of the micro / nano thermally conductive part near the support platform extends beyond the top of the support platform, and the end of the micro / nano thermally conductive part near the support platform is flush with the top of the support platform.

[0015] Optionally, the heating element is a heating wire or a heating bar.

[0016] Optionally, the micro / nano thermal conductive part includes a microplate, a first micropile, and a second micropile;

[0017] The microplate is connected to the insulating substrate;

[0018] The first micropile is connected to the microplate, and the first micropile is disposed in a manner that does not contact the insulating substrate;

[0019] The first micropile and the heating unit are connected by the second micropile.

[0020] Optionally, the cross-section of the microplate along the direction perpendicular to the central axis can be any one of a regular polygon structure, a circular structure, or a non-polygon structure.

[0021] Optionally, the number of the second micropillar is set to one, and the number of the first micropillar is set to one or more. When the number of the first micropillar is multiple, the ends of the multiple first micropillars connected to the microplate are arranged in a matrix or in multiple concentric rings.

[0022] Optionally, the insulating substrate further includes a bottom plate and a side plate; the opposite ends of the side plate are connected to the support platform and the bottom plate, and the support platform, the bottom plate and the side plate form the receiving cavity;

[0023] The base plate has an inlet, and the side plate has an outlet at the end near the support platform; the heat insulation fluid flows into the receiving cavity through the inlet and flows out of the receiving cavity through the outlet.

[0024] Optionally, there may be multiple outlets, which are arranged circumferentially around the central axis.

[0025] Optionally, the insulating fluid can be any one of aerogel, insulating gas, dry air, and inert gas.

[0026] Optionally, it also includes a first platform, a second platform, and a thickness adjustment component disposed between the electrostatic chuck and the cooling system;

[0027] The first platform is connected to the base plate of the insulating substrate;

[0028] The first platform and the second platform are connected by the thickness adjustment member, and the second platform is connected to the top of the cooling system;

[0029] The thickness adjustment component includes a cylinder connected to the second platform. The cylinder contains a contraction-expansion liquid, and a piston is movably inserted into the cylinder. The upper end of the piston is fixedly connected to the first platform. The contraction-expansion liquid is located between the lower end of the piston and the inner bottom wall of the cylinder. The contraction-expansion liquid in the cylinder changes its volume due to the heat changes of the insulating substrate and the first platform, according to the thermal expansion and contraction effect. This causes the end of the piston near the first platform to move away from or towards the cylinder, thereby increasing or decreasing the distance between the first platform and the second platform.

[0030] According to a second aspect of the present invention, a plasma processing apparatus is provided, including the aforementioned electrostatic chuck and a cooling system.

[0031] Compared with existing technologies, the advantages of this invention are as follows: by cleverly storing a heat-insulating fluid within the cavity, the thermal bridge between the heating element and the insulating substrate is successfully isolated. Simultaneously, the meticulously designed micro / nano thermally conductive parts can precisely guide heat directly from the heating element to the top plate of the insulating substrate, thereby efficiently heating the wafer. This innovative design enables flexible control over the heat conduction path and distribution within the insulating substrate, effectively overcoming the technical bottleneck of fixed and unadjustable heat conduction paths in traditional electrostatic chucks, representing a significant breakthrough in the field of semiconductor equipment technology. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the structure of one heating part corresponding to multiple micro-nano thermal conductive parts in an embodiment of the present invention.

[0033] Figure 2This is a schematic diagram of the structure of multiple heating parts corresponding to multiple micro-nano thermal conductive parts in an embodiment of the present invention.

[0034] Figure 3 This is a schematic diagram of a structure in which a plurality of first micropillars are provided in the micro-nano heat-conducting part in an embodiment of the present invention.

[0035] Figure 4 This is a schematic diagram of the thickness adjustment component in an embodiment of the present invention.

[0036] Explanation of the reference numerals in the figure:

[0037] 1. Insulating substrate; 11. Support platform; 12. Base plate; 13. Side plate; 14. Receiving cavity; 2. Heating unit; 3. Micro-nano thermally conductive unit; 31. Microplate; 32. First micropile; 33. Second micropile; 4. Thickness adjustment component; 41. Temperature control unit; 42. Cylinder; 43. Piston; 5. Wafer; 6. Central axis; 7. Inlet; 8. Outlet; 9. First platform; 10. Second platform. Detailed Implementation

[0038] Unless otherwise defined, the technical or scientific terms used in this specification shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention pertains. Specific embodiments of the invention will now be described in conjunction with the accompanying drawings.

[0039] To address the problems existing in the prior art, embodiments of the present invention provide an electrostatic chuck applied to a plasma processing device. This chuck cleverly isolates the heat conduction bridge between the heating element 2 and the insulating substrate 1 by storing a heat-insulating fluid within the receiving cavity 14. Simultaneously, a meticulously designed micro / nano heat-conducting part 3 precisely guides heat directly from the heating element 2 to the top plate of the insulating substrate 1, thereby efficiently heating the wafer 5. This innovative design enables flexible control over the heat conduction path and distribution within the insulating substrate 1, effectively overcoming the technical bottleneck of fixed heat conduction paths and unadjustable heat distribution in traditional electrostatic chucks, representing a significant breakthrough in the field of semiconductor equipment technology.

[0040] It is worth noting that in the semiconductor field, the etching equipment, deposition equipment, and resist stripping equipment included in the plasma processing apparatus are typically equipped with electrostatic chucks to fix the wafer 5 and control its temperature. In etching equipment, electrostatic chucks are used to stably fix the wafer 5 during etching, preventing wafer 5 displacement due to high temperature and chemical reactions, while ensuring etching uniformity through precise temperature control. In deposition equipment, electrostatic chucks can precisely control the temperature of the wafer 5 to ensure the uniformity and quality of thin film deposition, especially crucial in multilayer thin film deposition. In resist stripping equipment, electrostatic chucks are used to fix the wafer 5 during resist stripping, preventing wafer 5 drift due to high temperature and solvent effects, while ensuring consistent resist stripping results through temperature control. The electrostatic chuck in this application, with its unique heat conduction controllable design, can flexibly adjust the heat conduction path and distribution, making it suitable for scenarios in the aforementioned equipment where high precision temperature control of the wafer 5 is required, effectively improving process consistency and product quality.

[0041] In one embodiment, such as Figure 1 and Figure 2 As shown, the electrostatic chuck includes an insulating substrate 1, a heating part 2, and a micro / nano thermally conductive part 3.

[0042] In one embodiment, such as Figure 1 and Figure 2 As shown, the insulating substrate 1 has a support stage 11 for supporting the wafer 5, and the interior of the insulating substrate 1 has a receiving cavity 14, which contains a heat-insulating fluid. In this embodiment, by storing the heat-insulating fluid in the receiving cavity 14 inside the insulating substrate 1, a heat-insulating layer is constructed surrounding the heating part 2, thereby effectively limiting the direct conduction of heat generated by the heating part 2 to the insulating substrate 1, thus providing a good thermal environment for subsequent heat transfer processes.

[0043] In one embodiment, the shape design of the insulating substrate 1 is highly flexible and diverse. Specifically, the insulating substrate 1 can be a disk-shaped structure, which is widely used in many applications due to its symmetry and uniformity, ensuring uniform heat distribution on the substrate. Simultaneously, the insulating substrate 1 can also be designed as a regular polygonal structure, such as a cube or hexagon, which has unique advantages in certain process layouts and can better adapt to different equipment spaces and process requirements. Furthermore, the insulating substrate 1 can also be a non-regular polygonal structure, such as an irregular polygon or other customized shapes, to meet the specific needs of particular processes or equipment designs. However, the shape of the insulating substrate 1 of the present invention is not limited to the above-mentioned common structures. Its design can be flexibly adjusted and optimized according to factors such as process requirements, equipment layout, and space constraints in actual applications to achieve optimal performance. Therefore, although several possible structural forms are listed here, the range of shapes for the insulating substrate 1 of the present invention is far greater than these, and its diversity and flexibility provide broad applicability to various complex application scenarios.

[0044] In one embodiment, the shape of the receiving cavity 14 matches the overall shape of the insulating substrate 1. For example, when the insulating substrate 1 is a disc-shaped structure, the receiving cavity 14 can also be a disc-shaped structure to fully utilize the internal space and achieve uniform heat distribution. Simultaneously, the shape of the receiving cavity 14 can be optimized according to the flow characteristics of the insulating fluid and the layout of the micro / nano heat-conducting parts 3. For instance, sidewalls with a certain curvature or tilt angle can be used to promote smooth flow and uniform distribution of the insulating fluid, thereby further improving the insulation effect and the controllability of heat conduction. Furthermore, the shape of the receiving cavity 14 can also be designed to include multiple partitioned areas or have a special geometric structure to meet different process requirements and functional requirements. For example, in some application scenarios, by setting the receiving cavity 14 as multiple partitioned areas, independent control of heat conduction in different areas can be achieved, thereby improving the temperature control accuracy and flexibility of the entire electrostatic chuck.

[0045] In one embodiment, the insulating fluid can be any one of aerogel, insulating gas, dry air, and inert gas. These materials, due to their unique physical and chemical properties, exhibit superior thermal insulation performance, effectively blocking the disordered conduction of heat from the heating element 2 within the electrostatic chuck. This ensures that the heat generated by the heating element 2 is conducted to the mounting area of ​​the micro / nano thermally conductive element 3 corresponding to the support stage 11, thereby enabling thermal control of the corresponding area of ​​the wafer 5 and achieving uniform heating of the wafer 5.

[0046] Specifically, aerogels are materials with extremely low thermal conductivity, whose internal nanoporous structure significantly reduces heat conduction. For example, silica aerogels have a thermal conductivity of only 0.013 W / (m·K), making them excellent for applications requiring high-efficiency insulation. Insulating gases, such as sulfur hexafluoride (SF6), not only have good insulating properties but also excellent thermal insulation due to their high molecular weight and low thermal conductivity. Dry air is a simple and low-cost option, with a thermal conductivity of approximately 0.026 W / (m·K), providing sufficient insulation for many conventional applications. Inert gases, such as argon or helium, are often used in environments requiring high purity and stability due to their chemical stability and low thermal conductivity, such as in high-vacuum or high-cleanliness semiconductor manufacturing processes.

[0047] In practical applications, by selecting different insulating fluids, the insulation effect and heat conduction path of the electrostatic chuck can be optimized according to specific process requirements and equipment conditions. For example, in etching equipment requiring extremely high insulation performance, aerogel can be used as the insulating fluid; while in cost-sensitive deposition equipment, dry air may be a more economical choice. This flexibility allows the electrostatic chuck of this invention to adapt to a variety of different application scenarios, meet the stringent temperature control requirements of different processes, and further improve the performance and applicability of the electrostatic chuck.

[0048] In one embodiment, such as Figure 1 and Figure 2 As shown, the heating element 2 is disposed in the receiving cavity 14 and embedded in the insulating fluid. "Embedded" can be understood as the heating element 2 being placed within the insulating fluid. This blocks the heat conduction bridge between the heating element 2 and the insulating substrate 1. In this embodiment, the heating element 2 is isolated from the insulating substrate 1 by the insulating fluid, preventing direct heat conduction to the insulating substrate 1 and thus preventing disordered heat diffusion within the insulating substrate 1. The presence of the insulating fluid effectively isolates the heat conduction path. This embodiment improves the controllability and efficiency of heat conduction, ensures the temperature uniformity and stability of the wafer 5 during processing, reduces energy loss, and improves the overall performance and reliability of the electrostatic chuck.

[0049] In one embodiment, such as Figure 1 As shown, the portion of the heating element 2 located within the receiving cavity 14 is only at both ends radially of the insulating substrate 1 (in... Figure 1In this embodiment, the two ends (in the front-to-back direction) are in contact with the front and rear sidewalls of the receiving cavity 14, while other parts are not in contact. This configuration minimizes the heat conduction area between the heating element 2 and the insulating substrate 1, thereby reducing the disordered diffusion of heat within the insulating substrate 1. Contact only at both ends allows heat to be primarily conducted axially to the support stage 11 via the micro / nano thermal conductive parts 3, rather than diffusing disorderly within the insulating substrate 1. This design not only improves the efficiency and directionality of heat conduction but also enhances the precision of temperature control, ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process quality and product consistency.

[0050] In one embodiment, a heat insulation layer is provided at the ends of the heating element 2 in the radial direction of the insulating substrate 1 where it contacts the front and rear sidewalls of the receiving cavity 14. The heat insulation layer further reduces heat conduction from the heating element 2 to the insulating substrate 1 through the contact points, thereby effectively reducing disordered heat diffusion and loss. By providing a heat insulation layer at the contact points, it is ensured that most of the heat is precisely conducted to the support stage 11 of the wafer 5 through the micro / nano thermally conductive element 3, rather than being absorbed or lost by other parts of the insulating substrate 1 (parts outside the support stage 11). This design not only improves the efficiency and directionality of heat conduction but also enhances the accuracy and stability of temperature control, ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process quality and product consistency.

[0051] In one embodiment, the thermal insulation layer can be made of various materials with excellent thermal insulation properties, such as aerogel, ceramic fiber, polyimide film, or silica aerogel. These materials are widely used in the field of thermal insulation due to their low thermal conductivity and high thermal stability. For example, aerogel has extremely low thermal conductivity, only 0.013 W / (m·K), which can effectively prevent heat conduction; ceramic fiber has good mechanical strength and high temperature resistance, making it suitable for use in high-temperature environments; and polyimide film, due to its excellent chemical stability and mechanical properties, is suitable for various complex process environments. By selecting appropriate thermal insulation materials, the thermal insulation effect and heat conduction path of the electrostatic chuck can be further optimized according to specific process requirements and equipment conditions, ensuring that wafer 5 can obtain a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0052] In one embodiment, the heating element 2 is connected to two electrodes at its two ends in the radial direction of the insulating substrate 1, and the two electrodes provide the necessary electrical energy to the heating element 2 through an external power source. In another embodiment, the electrodes are located outside the insulating substrate 1, which avoids the heat generated by the electrodes during operation from affecting the overall heat of the insulating substrate 1.

[0053] In one embodiment, the heating element 2 is a heating wire or heating strip. Heating wires or heating strips are widely used due to their good conductivity and ease of processing. However, the heating element 2 of the present invention is not limited to heating wires or heating strips, and can also employ other forms of heating elements, such as heating films, micro heating tubes, or other materials or structures capable of generating heat. These different heating elements can be selected and designed according to specific process requirements, equipment layout, and temperature control accuracy requirements. For example, a heating film can provide a more uniform heat distribution, while a micro heating tube can provide concentrated heating in a specific area. By flexibly selecting and designing the form of the heating element 2, the present invention can meet the temperature control requirements in various application scenarios, further improving the applicability and performance of the electrostatic chuck.

[0054] In one embodiment, such as Figure 1 and Figure 2 As shown, the micro / nano thermally conductive part 3 is disposed within the insulating substrate 1 and is used to connect the heat conduction bridge between the heating part 2 and the support stage 11 of the insulating substrate 1. The first part of the micro / nano thermally conductive part 3 placed in the receiving cavity 14 is embedded in the thermal insulation fluid to block the radial heat conduction bridge between the first part of the micro / nano thermally conductive part 3 and the insulating substrate 1, so that the heat generated when the heating part 2 is loaded with current is axially guided to the support stage 11 of the insulating substrate 1 through the micro / nano thermally conductive part 3 to heat the wafer 5 on the support stage 11 of the insulating substrate 1.

[0055] This embodiment enables precise guidance of heat path and distribution. By embedding the first part of the micro / nano thermally conductive part 3 within the insulating fluid, the disordered radial diffusion of heat is effectively blocked, ensuring that heat can only be conducted axially to the support platform 11 of the insulating substrate 1 through the micro / nano thermally conductive part 3. This design makes heat conduction more concentrated and efficient, avoiding disordered heat propagation and loss within the insulating substrate 1, thereby achieving uniform heating of the wafer 5. Simultaneously, this structure allows for flexible adjustment of the layout and number of the micro / nano thermally conductive parts 3 according to different process requirements, further optimizing the heat conduction path and distribution, improving the accuracy and flexibility of temperature control, ensuring the temperature uniformity and stability of the wafer 5 during processing, and thus improving process consistency and product quality.

[0056] In one embodiment, such as Figure 1 As shown, there are several micro / nano thermal conductive parts 3, and the number of heating parts 2 is set to one. One heating part 2 is connected to several micro / nano thermal conductive parts 3.

[0057] In this embodiment, a heating element 2 is connected to several micro / nano heat-conducting elements 3, enabling multi-path heat conduction. This design not only improves the efficiency of heat conduction but also allows heat to be distributed more evenly across the wafer 5. Specifically, the heat generated by a single heating element 2 can be simultaneously conducted to the support stage 11 of the insulating substrate 1 through multiple micro / nano heat-conducting elements 3, thus avoiding localized overheating caused by heat concentration at a single point. Furthermore, the distribution of the multiple micro / nano heat-conducting elements 3 can be optimized according to the shape and process requirements of the wafer 5, further ensuring uniform heat distribution. This structure not only improves the uniformity of heating the wafer 5 but also enhances the thermal conductivity and reliability of the entire electrostatic chuck, which is particularly important for semiconductor manufacturing processes requiring high-precision temperature control.

[0058] In one embodiment, the number of micro / nano thermal conductive parts 3 is set to 30. Of course, in other embodiments, the number of micro / nano thermal conductive parts 3 can be 20, 25, 35, 40, 45 or 50, but is not limited to 20, 25, 35, 40, 45 or 50.

[0059] This embodiment offers high flexibility and customizability to meet the specific needs of different processes and equipment regarding heat conduction and distribution. By adjusting the number of micro / nano thermally conductive parts 3, the heat conduction path and distribution density can be precisely controlled, thereby achieving fine-tuning of the wafer 5 heating process. For example, the number of micro / nano thermally conductive parts 3 can be increased in areas requiring more concentrated heating, while the number can be reduced in areas with lower heat requirements. This variable number configuration allows the electrostatic chuck to adapt to wafers 5 of different sizes and shapes, as well as different process requirements. For instance, in high-precision etching or deposition processes, optimizing the number of micro / nano thermally conductive parts 3 ensures the uniformity of the wafer 5 surface temperature, improving process consistency and product quality. Furthermore, this design allows for optimization based on energy consumption and cost-effectiveness in actual production, achieving an optimal balance between performance and economy for the electrostatic chuck.

[0060] In one embodiment, such as Figure 1 As shown, the heating element 2 is disposed below several micro / nano thermally conductive elements 3. For example, the heating element 2 is located on the central axis 6 of the insulating substrate 1. The central axis 6 is a straight line perpendicular to the surface of the support platform 11; preferably, the central axis 6 is the central axis of the support platform 11. Figure 1 In this embodiment, the central axis 6 coincides with the vertical central axis of the insulating substrate 1. This embodiment enables efficient heat conduction and precise control. Specifically, placing the heating element 2 below the micro / nano heat-conducting elements 3 ensures that heat can be directly and uniformly transferred to each micro / nano heat-conducting element 3, thereby achieving uniform heating of the wafer 5. This layout reduces heat loss and diffusion during the transfer process, improving the efficiency and directionality of heat conduction.

[0061] Meanwhile, placing the heating element 2 below the micro / nano thermally conductive element 3 facilitates installation and maintenance in practical applications. This layout makes the connection between the heating element 2 and the micro / nano thermally conductive element 3 more stable and reliable, reducing contact problems caused by mechanical vibration or thermal expansion. Furthermore, this design effectively utilizes space, making the overall structure of the electrostatic chuck more compact and suitable for equipment and process environments of various sizes.

[0062] Of course, in other examples, the heating element 2 is not limited to being located only on the central axis 6 of the insulating substrate 1. As long as heat can be effectively conducted to the micro / nano thermally conductive element 3 and further transferred to the support stage 11 of the wafer 5, the heating element 2 can be located at any suitable position within the receiving cavity 14. For example, the heating element 2 can be offset to the left of the central axis 6 of the insulating substrate 1 to adapt to specific process requirements or equipment layouts. This flexible layout allows the electrostatic chuck to be customized according to different application scenarios and process requirements, thereby improving its applicability and performance in various semiconductor manufacturing processes.

[0063] In one embodiment, such as Figure 2 As shown, both the micro / nano thermally conductive part 3 and the heating part 2 are provided in plurality of units. In one embodiment, one heating part 2 is connected to a plurality of micro / nano thermally conductive parts 3. In another embodiment, as shown... Figure 2 As shown, several heating elements 2 are connected one-to-one with several micro / nano thermal conductive elements 3.

[0064] This embodiment enables precise control of heat conduction. Through the flexible combination of multiple heating elements 2 and multiple micro / nano heat-conducting elements 3, the distribution and conduction path of heat can be precisely controlled according to different process requirements. For example, when a specific area of ​​the wafer 5 needs to be heated, the heating element 2 and the micro / nano heat-conducting element 3 corresponding to that area can be activated individually to achieve localized heating. Furthermore, this design can also achieve uniform temperature distribution across the entire wafer 5 by adjusting the power of different heating elements 2, ensuring temperature uniformity and stability of the wafer 5 during processing. This flexible heat regulation method not only improves the applicability and performance of the electrostatic chuck but also enhances process consistency and product quality.

[0065] For example, when there are 30 micro / nano heat-conducting parts 3, there are also 30 heating parts 2, thus achieving a one-to-one correspondence between the heating parts 2 and the micro / nano heat-conducting parts 3. Alternatively, when there are 30 micro / nano heat-conducting parts 3, there are 6 heating parts 2. In this case, the number of micro / nano heat-conducting parts 3 connected to each individual heating part 2 can be the same or different. For example, each heating part 2 can be connected to 5 micro / nano heat-conducting parts 3; or the number of micro / nano heat-conducting parts 3 connected to each heating part 2 can be inconsistent, which will not be elaborated here.

[0066] In one embodiment, a plurality of the micro-nano heat-conducting parts 3 are arranged in an array; the heating parts 2 are located between the rows and columns of the array of micro-nano heat-conducting parts 3, wherein each heating part 2 is connected to at least two micro-nano heat-conducting parts 3 located in the same row or column.

[0067] This embodiment arranges multiple micro-nano heat-conducting parts 3 in an array and places the heating part 2 between the rows and columns of the array of micro-nano heat-conducting parts 3. Each heating part 2 is connected to at least two micro-nano heat-conducting parts 3 in the same row or column, which can achieve a uniform heating effect on the insulating substrate 1. At the same time, this arrangement of micro-nano heat-conducting parts 3 can make the heat-receiving area of ​​the support platform 11 of the insulating substrate 1 larger, so as to ensure that the device can achieve effective temperature control of the wafer 5.

[0068] In one embodiment, the projected area of ​​the heating region formed by the array onto the bearing surface of the bearing platform 11 is greater than or equal to the area of ​​the bearing surface of the bearing platform 11.

[0069] In one embodiment, such as Figure 1 and Figure 2 As shown, the insulating substrate 1 has a central axis 6 perpendicular to the surface of the support platform 11, and a plurality of micro-nano heat-conducting parts 3 are arranged around the central axis 6 on the insulating substrate 1, and each heating part 2 is connected to at least two micro-nano heat-conducting parts 3.

[0070] This layout in this embodiment allows heat to be uniformly conducted from the heating element 2 to the periphery of the support stage 11 via the micro / nano thermal conductive element 3, thereby ensuring that the wafer 5 receives a uniform heat distribution on the support stage 11. This design not only improves the efficiency and uniformity of heat conduction but also enhances the accuracy of temperature control, ensuring that the wafer 5 receives a stable and uniform heat supply during processing, thereby improving process consistency and product quality.

[0071] In one embodiment, a plurality of the micro / nano heat-conducting parts 3 form multiple concentric rings, with the center of each ring located on the central axis 6. The diameters of the multiple concentric rings arranged radially along the support platform 11 and sequentially from the central axis 6 toward the edge of the support platform 11 increase progressively. Furthermore, the number of micro / nano heat-conducting parts 3 forming each ring is also inconsistent, increasing radially along the support platform 11 and from the central axis 6 toward the edge of the support platform 11.

[0072] In one embodiment, a plurality of the micro / nano thermally conductive parts 3 form multiple rings, but the multiple rings are not concentrically arranged. Furthermore, the micro / nano thermally conductive parts 3 forming the same ring are connected to a heating part 2.

[0073] This embodiment achieves independent and precise heating of different regions of the wafer 5 by assembling several micro / nano thermally conductive parts 3 into multiple non-concentric rings, with each micro / nano thermally conductive part 3 forming a ring connected to a heating part 2. This non-concentric ring layout allows for flexible adjustment of the heat distribution in each region according to the specific process requirements of the wafer 5, thereby enabling more complex temperature control modes. For example, when different temperatures are required for the edges and center of the wafer 5, this design allows for independent control of the heating power of each region, ensuring that each region reaches the required temperature. Furthermore, this layout improves heat conduction efficiency and reduces disordered heat diffusion within the insulating substrate 1, thereby enhancing the overall thermal conductivity and temperature control accuracy of the electrostatic chuck. This ensures that the wafer 5 receives a uniform and stable heat supply during processing, ultimately improving process consistency and product quality.

[0074] In one embodiment, there is a gap between the ends of two adjacent micro / nano thermally conductive parts 3 near the support platform 11, the size of the gap being greater than or equal to 0.5 μm and less than or equal to 1.5 μm.

[0075] This embodiment effectively prevents direct heat conduction between adjacent micro / nano thermally conductive parts 3 by setting a gap of a specific size between them, thereby avoiding thermal interference between adjacent micro / nano thermally conductive parts 3. This precise gap control ensures that each micro / nano thermally conductive part 3 can independently conduct heat to a specific area of ​​the wafer 5 without being affected by other micro / nano thermally conductive parts 3. This not only improves the accuracy and uniformity of heat conduction but also enhances the stability of temperature control, ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0076] In one embodiment, the end (which can be understood as the upper end) of the micro / nano thermally conductive part 3 near the support stage 11 is embedded within the support stage 11. This embodiment, by embedding the end of the micro / nano thermally conductive part 3 within the support stage 11, ensures that heat is directly and uniformly conducted to the bottom of the wafer 5, thereby improving the efficiency and uniformity of heat transfer. This structure not only reduces heat loss during transfer but also enhances the thermal contact between the micro / nano thermally conductive part 3 and the support stage 11, allowing heat to be transferred more quickly from the heating part 2 to the surface of the wafer 5. Furthermore, this design improves the structural stability and reliability of the entire electrostatic chuck, ensuring that the connection between the micro / nano thermally conductive part 3 and the support stage 11 remains stable during prolonged high-temperature operation, thereby improving process consistency and product quality.

[0077] It is worth noting that in this embodiment, the micro-nano thermally conductive part 3 includes a first part and a second part, the first part being placed inside the receiving cavity 14, and the second part being disposed inside the support platform 11.

[0078] In one embodiment, such as Figure 1 or Figure 2 As shown, the end (which can be understood as the upper end) of the micro / nano thermally conductive part 3 near the support platform 11 is abutted against the bottom of the support platform 11. In this embodiment, this abutting arrangement ensures good thermal contact between the micro / nano thermally conductive part 3 and the support platform 11, reducing heat loss during transfer and improving heat conduction efficiency. Simultaneously, this structure simplifies the manufacturing process and reduces production costs, as no additional embedding or fixing processes are required. Furthermore, this design enhances the overall structural stability of the electrostatic chuck, ensuring stable thermal conductivity between the micro / nano thermally conductive part 3 and the support platform 11 during high-temperature and long-term operation, thereby improving process consistency and product quality.

[0079] It is worth noting that in this example, the micro-nano thermally conductive part 3 has only a first part, which is placed in the receiving cavity 14, and the end of the first part facing the support platform 11 is abutted against the bottom of the support platform 11.

[0080] In one embodiment, the end of the micro / nano thermally conductive part 3 near the support stage 11 (which can be understood as the upper end) extends within the support stage 11 in a direction away from the receiving cavity, and the end of the micro / nano thermally conductive part 3 near the support stage 11 is flush with the support surface of the support stage 11. This embodiment enables direct and uniform heat conduction to the bottom of the wafer 5, while ensuring more stable and uniform contact between the micro / nano thermally conductive part 3 and the surface of the wafer 5. This design not only improves the efficiency of heat transfer but also reduces heat loss during the transfer process, ensuring that the wafer 5 receives a uniform and stable heat supply during processing. Furthermore, the fact that the end of the micro / nano thermally conductive part 3 near the support stage 11 is flush with the support surface of the support stage 11 prevents the portion of the micro / nano thermally conductive part 3 protruding from the support surface of the support stage 11 from causing scratches or damage to the wafer 5, thereby improving the integrity of the wafer 5 and the product quality.

[0081] In one embodiment, such as Figure 3 As shown, the micro-nano thermal conductive part 3 includes a microplate 31, a first micropile 32, and a second micropile 33; the microplate 31 is connected to the insulating substrate 1; the first micropile 32 is connected to the microplate 31, and the first micropile 32 is disposed without contact with the insulating substrate 1; the first micropile 32 and the heating part 2 are connected through the second micropile 33.

[0082] This embodiment aims to achieve efficient heat conduction and precise temperature control. The connection between the microplate 31 and the insulating substrate 1 ensures the structural stability of the micro / nano heat-conducting part 3. The first micropillar 32 does not contact the insulating substrate 1, preventing disordered heat diffusion through the substrate and ensuring that heat is primarily conducted through the micro / nano heat-conducting part 3. The second micropillar 33 acts as a bridge connecting the first micropillar 32 and the heating part 2, further optimizing the heat conduction path and enabling efficient heat transfer from the heating part 2 to the micro / nano heat-conducting part 3, ultimately conducting it uniformly to the wafer 5. This structural design not only improves the efficiency and uniformity of heat conduction but also enhances the temperature control accuracy and reliability of the entire electrostatic chuck, ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0083] In one embodiment, the cross-section of the microplate 31 along the direction perpendicular to the central axis 6 is any one of a regular polygonal structure, a circular structure, or a non-polygonal structure.

[0084] In this embodiment, the shape can be optimized to improve heat conduction paths and distribution based on different process requirements and equipment layouts. For example, a circular microplate 31 ensures uniform heat conduction in all directions, suitable for heating scenarios requiring high symmetry; a regular polygonal structure provides more concentrated heat conduction in specific directions, suitable for applications requiring directional heating; and a non-polygonal structure offers greater design flexibility, allowing for customized designs based on complex process requirements. This flexible shape selection not only improves the applicability and adaptability of the electrostatic chuck but also further optimizes the efficiency and uniformity of heat conduction, ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0085] In one embodiment, the first micropillar 32 can be cylindrical, prismatic, frustum-shaped, or truncated pyramidal, among other shapes. This diverse shape design allows for optimization of heat conduction paths and distribution based on different process requirements and equipment layouts. For example, cylindrical micropillars ensure uniform heat conduction in all directions, suitable for heating scenarios requiring high symmetry; while prismatic micropillars provide more concentrated heat conduction in specific directions, suitable for applications requiring directional heating. Furthermore, frustum-shaped or truncated pyramidal micropillars can further optimize heat conduction efficiency and reduce heat loss during conduction through their gradually changing cross-sectional shape. This flexible shape selection not only improves the applicability and adaptability of the electrostatic chuck but also further optimizes the efficiency and uniformity of heat conduction, ensuring that wafer 5 receives a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0086] Of course, in other embodiments, the first micropile 32 is not limited to cylindrical, prismatic, frustum-shaped or frustum-shaped.

[0087] In one embodiment, the second micropillar 33 can be cylindrical, prismatic, frustum-shaped, or truncated pyramidal, among other shapes. This diverse shape design allows for optimization of heat conduction paths and distribution based on different process requirements and equipment layouts. For example, a cylindrical second micropillar 33 ensures uniform heat conduction in all directions, suitable for heating scenarios requiring high symmetry; while a prismatic second micropillar 33 provides more concentrated heat conduction in a specific direction, suitable for applications requiring directional heating. Furthermore, the frustum-shaped or truncated pyramidal second micropillar 33 can further optimize heat conduction efficiency and reduce heat loss during conduction through its gradually changing cross-sectional shape. This flexible shape selection not only improves the applicability and adaptability of the electrostatic chuck but also further optimizes the efficiency and uniformity of heat conduction, ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0088] Of course, in other embodiments, the second micropile 33 is not limited to cylindrical, prismatic, frustum-shaped or frustum-shaped.

[0089] In one embodiment, one second micropile 33 and one first micropile 32 are provided, so that the first micropile 32 and the second micropile 33 are provided in a one-to-one correspondence. In this embodiment, the upper end of the first micropile 32 is preferably connected to the middle of the lower end face of the microplate 31. Of course, in other embodiments, the upper end of the first micropile 32 is not limited to being connected to the middle of the lower end face of the microplate 31.

[0090] In one embodiment, such as Figure 3 As shown, multiple first micropillars 32 are provided, and the ends (upper ends) of the multiple first micropillars 32 connected to the microplate 31 are arranged in a matrix. Through this matrix arrangement, the multiple first micropillars 32 can be evenly distributed on the lower surface of the microplate 31, thereby ensuring that heat can be evenly conducted from the heating part 2 through the second micropillars 33 to the first micropillars 32, and then transferred to other parts of the micro / nano heat-conducting part 3. This layout not only improves the efficiency of heat conduction but also enhances the accuracy of temperature control, ensuring that the wafer 5 receives a uniform and stable heat supply during processing. Furthermore, the matrix arrangement design provides structural stability, enabling the entire micro / nano heat-conducting part 3 to maintain reliable performance under high temperatures and long-term operation, thereby improving process consistency and product quality.

[0091] In one embodiment, such as Figure 3 As shown, there are multiple first micropillars 32, and the ends (which can be understood as the upper ends) of the multiple first micropillars 32 connected to the microplate 31 are arranged in multiple concentric rings. The concentric ring arrangement has the same function as the matrix arrangement described above, and will not be repeated here.

[0092] In one embodiment, such as Figure 1 and Figure 2 As shown, the insulating substrate 1 further includes a base plate 12 and a side plate 13; the opposite ends of the side plate 13 are connected to the support platform 11 and the base plate 12, and the support platform 11, the base plate 12, and the side plate 13 form the receiving cavity 14. The base plate 12 is provided with an inlet 7, and the end of the side plate 13 near the support platform 11 is provided with an outlet 8; the heat insulation fluid flows into the receiving cavity 14 through the inlet 7 and flows out of the receiving cavity 14 through the outlet 8.

[0093] In this embodiment, the inlet 7 and outlet 8 serve to circulate the insulating fluid, ensuring its continuous and effective insulation function. Inlet 7 introduces the insulating fluid into the receiving cavity 14, filling the cavity and forming an insulating layer that blocks heat conduction between the heating element 2 and the insulating substrate 1. Outlet 8 allows the insulating fluid to flow out, which not only helps maintain its flow state and prevents performance degradation due to prolonged stagnation (such as viscosity changes and component separation), but also allows for fluid replacement or replenishment as needed, ensuring optimal operating conditions. This design enables the electrostatic chuck to maintain stable insulation during long-term operation, improving heat transfer efficiency and accuracy, thereby enhancing the overall performance and reliability of the device.

[0094] It is worth noting that, in one embodiment, when the support stage 11 of the insulating substrate 1 is heated, the heat insulation fluid can remain stationary within the receiving cavity 14, at which time the heat insulation fluid does not move. This embodiment avoids heat disturbance and uneven distribution caused by flow through static heat insulation, improves the stability and uniformity of heat conduction, and ensures that the wafer 5 can obtain a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0095] In one embodiment, when the support stage 11 of the insulating substrate 1 is heated, the thermal insulation fluid circulates within the receiving cavity 14 through the inlet 7 and outlet 8. In this embodiment, the circulating thermal insulation fluid continuously removes excess heat generated during heating, preventing heat accumulation within the receiving cavity 14 and thus maintaining stable thermal insulation performance. This dynamic thermal management method not only improves the efficiency and uniformity of heat conduction but also enhances the temperature control accuracy and stability of the entire electrostatic chuck. Through circulation, the thermal insulation fluid can better exert its thermal insulation effect, reducing disordered heat diffusion within the insulating substrate 1 and ensuring a uniform and stable heat supply to the wafer 5 during processing.

[0096] In one embodiment, there are multiple outlets 8, which are arranged circumferentially around the central axis 6.

[0097] In one embodiment, such as Figure 1 , Figure 2 and Figure 4 As shown, the electrostatic chuck further includes a first platform 9, a second platform 10, and a thickness adjustment component 4; the first platform 9 is connected to the base plate 12 of the insulating substrate 1; the first platform 9 and the second platform 10 are connected through the thickness adjustment component 4.

[0098] In one embodiment, both the first platform 9 and the second platform 10 adopt a plate-like structure, the specific structure of which can be adapted to the structure of the insulating substrate 1. Furthermore, the dimensions of the first platform 9 and the second platform 10 may be the same or different, but the dimensions of both the first platform 9 and the second platform 10 are larger than the dimensions of the insulating substrate 1.

[0099] In one embodiment, the thickness adjustment member 4 is provided in one unit, and in this embodiment, the thickness adjustment member 4 is disposed on the central axis 6 of the first platform 9 and the second platform 10.

[0100] In one embodiment, the number of thickness adjustment members 4 is set to several, for example, three, four, or five, but not limited to three, four, or five. The several thickness adjustment members 4 can be arranged at equal intervals along the horizontal direction. Alternatively, the several thickness adjustment members 4 can be arranged in a ring at equal intervals around the central axis 6 of the first platform 9.

[0101] In this embodiment, multiple thickness adjustment components 4 ensure more uniform thickness adjustment across the entire platform during temperature changes, preventing platform deformation caused by uneven local expansion or contraction. This design not only improves the temperature regulation accuracy of the electrostatic chuck but also enhances its adaptability and reliability under complex process conditions. Furthermore, the arrangement of multiple thickness adjustment components 4 can be flexibly adjusted according to different process requirements, further optimizing the performance of the electrostatic chuck and ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0102] In one embodiment, such as Figure 4 As shown, the thickness adjustment component 4 also includes a cylinder 42 connected to the second platform 10. The cylinder 42 contains a contraction-expansion liquid, and a piston 43 is movably inserted into the cylinder 42. The upper end of the piston 43 is fixedly connected to the first platform 9. The contraction-expansion liquid is located between the lower end of the piston 43 and the inner bottom wall of the cylinder 42. Due to changes in heat on the insulating substrate and the first platform, the contraction-expansion liquid in the cylinder changes volume according to the thermal expansion and contraction effect, causing the end of the piston near the first platform to move away from or towards the cylinder, thereby increasing or decreasing the distance between the first platform and the second platform.

[0103] In this embodiment, the thickness adjustment component 4 can be dynamically adjusted according to the heat generated by the heating unit 2 and the micro / nano thermally conductive part 3 during operation. When the heating unit 2 is working, the generated heat is conducted to the insulating substrate 1 through the micro / nano thermally conductive part 3 and then to the first platform 9, causing the temperature of the shrinkage liquid to rise. At this time, the shrinkage liquid in the thickness adjustment component 4 expands due to the thermal expansion and contraction effect, causing a change in the distance between the first platform 9 and the second platform 10. This design allows the electrostatic chuck to automatically adjust its thickness according to the actual working temperature. The thickness can be understood as the dimension in the vertical direction, specifically achieved by changing the distance between the first platform 9 and the second platform 10. This ensures that the wafer 5 receives a uniform and stable heat supply during processing, while reducing the risk of wafer 5 deformation or damage due to temperature changes, improving process consistency and product quality.

[0104] Specifically, when the temperature changes, the condensing liquid changes volume due to thermal expansion and contraction. When the temperature rises, the condensing liquid expands, pushing the piston 43 upward, thereby increasing the distance between the first platform 9 and the second platform 10; when the temperature drops, the condensing liquid contracts, and the piston 43 moves downward under external pressure or its own elasticity, reducing the distance between the first platform 9 and the second platform 10. This design allows the thickness adjustment component 4 to automatically adjust the distance between the first platform 9 and the second platform 10 according to temperature changes, thereby achieving dynamic adjustment of the electrostatic chuck thickness and ensuring that the wafer 5 receives a uniform and stable heat supply during processing.

[0105] In one embodiment, such as Figure 4 As shown, the thickness adjustment component 4 also includes a temperature control unit 41, which is fixed to the cylinder body 42, and the heating end of the temperature control unit 41 extends into the contraction-extension liquid. The temperature control unit 41 makes the temperature control of the contraction-extension liquid more precise.

[0106] In one embodiment, the temperature control unit 41 can be a conductive plate that generates heat, but it is not limited to a conductive plate that generates heat.

[0107] In one embodiment, the first platform 9, the second platform 10, and the piston 43 are all made of thermally conductive materials.

[0108] In one embodiment, a cooling system is provided at the bottom of the second platform 10. This cooling system is used to cool the entire electrostatic chuck after the wafer 5 has been processed. It is worth noting that both the cooling system and the electrostatic chuck are located within the process chamber, and the cooling system employs existing technology, which will not be elaborated upon here.

[0109] In this embodiment, when the insulating substrate 1 experiences a temperature change during heating, the first platform 9 and the second platform 10 of the thermally conductive material can respond quickly, effectively transferring heat to the piston 43 and the contractile liquid. This rapid heat conduction ensures that the contractile liquid can change its volume in a timely manner due to thermal expansion and contraction, thereby pushing the piston 43 to move. This increases the distance between the first platform 9 and the second platform 10, thus moving the insulating substrate 1 away from the cooling system. This isolates or reduces the thermal bridge between the insulating substrate 1 and the cooling system, preventing heat loss from the insulating substrate 1 when heat is conducted to the cooling system.

[0110] Specifically, when the temperature of the insulating substrate 1 rises, the distance between the first platform 9 and the second platform 10 increases, moving the insulating substrate 1 away from the cooling system and preventing heat conduction to the cooling system from affecting the temperature of the insulating substrate 1. When the temperature of the insulating substrate 1 decreases, the distance between the first platform 9 and the second platform 10 decreases, moving the insulating substrate 1 closer to the cooling system. Heat on the insulating substrate 1 is then rapidly conducted to the cooling system, improving the cooling process. It should be noted that coolant is circulated into the cooling system during the cooling process of the insulating substrate 1; this is an existing technology and will not be elaborated further. To address the problems of the existing technology, embodiments of the present invention also provide a plasma processing apparatus, including the aforementioned electrostatic chuck.

[0111] In this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0112] The above description of the embodiments is intended to enable those skilled in the art to understand and apply the present invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without creative effort. Therefore, the present invention is not limited to the embodiments described herein, and any improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope and spirit of the invention are within the scope of the present invention.

Claims

1. An electrostatic chuck, comprising: The electrostatic chuck is applied to a plasma processing device, and the electrostatic chuck comprises: An insulating substrate has a supporting table for supporting a wafer, and an inner part of the insulating substrate has a containing cavity in which a heat insulation fluid is stored; A heating part is arranged in the containing cavity and embedded in the heat insulation fluid to block a heat conduction thermal bridge between the heating part and the insulating substrate; A micro-nano heat conduction part is arranged in the insulating substrate and used to connect a heat conduction thermal bridge between the heating part and the supporting table of the insulating substrate, a first part of the micro-nano heat conduction part arranged in the containing cavity is embedded in the heat insulation fluid to block a radial heat conduction thermal bridge between the first part of the micro-nano heat conduction part and the insulating substrate, and heat generated when the heating part is loaded with current is axially guided to the supporting table of the insulating substrate through the micro-nano heat conduction part to heat the wafer on the supporting table.

2. The electrostatic chuck of claim 1, wherein, The micro-nano heat conduction part is arranged in a plurality of numbers, and the heating part is arranged in one number.

3. The electrostatic chuck of claim 1, wherein, The micro-nano heat conduction part and the heating part are arranged in a plurality of numbers, one heating part is connected to a plurality of micro-nano heat conduction parts, or a plurality of heating parts are connected to a plurality of micro-nano heat conduction parts one by one.

4. The electrostatic chuck of claim 3, wherein, The plurality of micro-nano heat conduction parts are arranged in an array, and the heating part is located between rows and columns of the micro-nano heat conduction part array, wherein each heating part is connected to at least two micro-nano heat conduction parts located in the same row or column.

5. The electrostatic chuck of claim 2 or 3, wherein, The insulating substrate has a central axis perpendicular to a supporting surface of the supporting table, and a plurality of micro-nano heat conduction parts are arranged around the insulating substrate with the central axis as the center, and each heating part is connected to at least two micro-nano heat conduction parts.

6. The electrostatic chuck of claim 2 or 3, wherein, There is a gap between end parts of two adjacent micro-nano heat conduction parts close to the supporting table, and the size of the gap is greater than or equal to 0.5 μm and less than or equal to 1.5 μm.

7. The electrostatic chuck of claim 1, wherein, The end part of the micro-nano heat conduction part close to the supporting table is inlaid in the supporting table, or the end part of the micro-nano heat conduction part close to the supporting table is arranged in abutment with the bottom of the supporting table.

8. The electrostatic chuck of claim 7, wherein, The end part of the micro-nano heat conduction part close to the supporting table extends in the supporting table in a direction away from the containing cavity, and the end part of the micro-nano heat conduction part close to the supporting table is arranged in flush with the supporting surface of the supporting table.

9. The electrostatic chuck of claim 1, wherein, The heating part is a heating wire or a heating strip.

10. The electrostatic chuck of claim 5, wherein, The micro-nano heat conduction part includes a micro plate, a first micro pile and a second micro pile. The micro plate is connected to the insulating substrate. The first micro pile is connected to the micro plate, and the first micro pile is arranged in non-contact with the insulating substrate. The first micro pile and the heating part are connected through the second micro pile.

11. The electrostatic chuck of claim 10, wherein, The cross section of the micro plate along the vertical line of the central axis is in any one of a regular polygon structure, a circular structure and a non-polygon structure.

12. The electrostatic chuck of claim 10, wherein, The number of the second micro pile is one, and the number of the first micro pile is one or more. When the number of the first micro pile is multiple, the end parts of the multiple first micro piles connected to the micro plate are arranged in a matrix or multiple concentric circular rings.

13. The electrostatic chuck of claim 10, wherein, The insulating substrate further comprises a bottom plate and a side plate; opposite ends of the side plate are connected to the bearing table and the bottom plate, and the bearing table, the bottom plate and the side plate enclose the accommodating cavity; The bottom plate is provided with an inlet, and the end of the side plate close to the bearing table is provided with an outlet; the heat insulation fluid flows into the accommodating cavity through the inlet and flows out of the accommodating cavity through the outlet.

14. The electrostatic chuck of claim 13, wherein, The number of the outlets is multiple, and the multiple outlets are arranged in a circumferential direction with the central axis as the center.

15. The electrostatic chuck of claim 1, wherein, The heat insulation fluid is any one of aerogel, insulating gas, dry air and inert gas.

16. The electrostatic chuck of claim 10, wherein, Further comprising a first platform, a second platform and a thickness adjusting member arranged between the electrostatic chuck and the cooling system; The first platform is connected to the bottom plate of the insulating substrate; The first platform and the second platform are connected through the thickness adjusting member, and the second platform is connected to the top of the cooling system; The thickness adjusting member comprises a cylinder connected to the second platform, the cylinder stores a shrinkage liquid, a piston is movably inserted into the cylinder, the upper end of the piston is fixedly connected to the first platform, the shrinkage liquid is located between the lower end of the piston and the inner bottom wall of the cylinder, and the shrinkage liquid in the cylinder changes in volume according to the thermal expansion and contraction effect due to the change of heat on the insulating substrate and the first platform, so that the piston moves away from or towards the end of the first platform close to the cylinder, so as to increase or decrease the distance between the first platform and the second platform.

17. A plasma processing apparatus, characterized by, The electrostatic chuck comprises the electrostatic chuck according to any one of claims 1 to 16, and a cooling system.

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