Chip substrate performance detection device and method thereof

Abstract

The invention provides a chip substrate performance detection device and method, and belongs to the technical field of chip detection.The chip substrate performance detection device is characterized in that a partition plate is arranged in a detection shell to form a containing cavity and an equipment cavity, a detection isolation hood forming a detection cavity is arranged at the top of the partition plate, and a heating isolation hood forming a heating cavity is arranged at the bottom of the partition plate; the impedance tester is electrically connected with four groups of test chip probes mounted on the chip clamp and is used for acquiring an impedance spectrum sequence; the alternating current and direct current parameter tester is electrically connected with a probe matrix installed at the top of the detection isolation cover to obtain a bonding pad electrical performance matrix sequence, and the probe matrix is provided with a plurality of groups of displacement sensors used for obtaining vertical displacement feedback data; the control module is used for acquiring a substrate performance comprehensive evaluation report and transmitting the report to the display terminal; the chip substrate does not need to be transferred among different devices, a high-temperature and corrosion composite environment can be synchronously simulated, performance detection can be realized, and interference of environment change or mechanical contact on detection data in the transfer process is avoided.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of chip detection, more particularly relates to a chip substrate performance detection device and method. BACKGROUND

[0002] Chip substrate is the core component of electronic equipment, which bears the key functions of supporting chips, connecting circuits and conducting signals. With the rapid development of electronic technology, the integration of chips is continuously improved, and the working frequency continues to rise. Chip substrate needs to maintain stable performance in complex working conditions such as high temperature, humidity, vibration and corrosive environment. Therefore, it is necessary to detect its thermal stability and corrosion resistance.

[0003] The existing chip substrate performance detection device is mainly for single function detection. Its thermal stability and corrosion resistance need to be detected separately, and it cannot realize the dynamic coupling of heating and corrosion environment. It can only simulate single environmental stress in steps. The substrate needs to be transferred multiple times during the detection process, which not only increases the operation steps, but also may cause detection data distortion due to environmental changes or mechanical contact during the transfer process, and it is difficult to track the dynamic changes of the substrate performance with the detection process. SUMMARY

[0004] In order to solve the above technical problems, the present application provides a chip substrate performance detection device and method to solve the technical problems in the prior art that the traditional chip substrate performance detection device mainly detects single function, and the substrate needs to be transferred multiple times during the detection process, which may cause detection data distortion due to environmental changes or mechanical contact during the transfer process, and it is difficult to track the dynamic changes of the substrate performance with the detection process.

[0005] The purpose and effect of the chip substrate performance detection device and method of the present application are achieved by the following specific technical means: A chip substrate performance detection device comprises: A detection shell, a placing cavity and an equipment cavity are formed in the detection shell by arranging a partition plate. The top of the partition plate is provided with a detection isolation cover forming a detection cavity, and the bottom of the partition plate is provided with a heating isolation cover forming a heating cavity. The detection cavity and the heating cavity are communicated; A chip clamp is installed in the detection cavity. The chip clamp is used to fix the chip substrate to be detected; An impedance tester is electrically connected with four groups of test chip probes installed on the chip clamp. The four groups of test chip probes are connected with the electrodes on the chip substrate. The impedance tester is used to obtain impedance spectrum sequence; The alternating current and direct current parameter tester is electrically connected with the probe matrix installed on the top of the detection isolation cover, the bottom end of the probe matrix is in contact with the pads on the chip substrate, and the alternating current and direct current parameter tester is used to obtain the pad electrical performance matrix sequence, a plurality of displacement sensors for obtaining vertical displacement feedback data are arranged on the probe matrix, and the detection ends of the plurality of displacement sensors respectively face a plurality of detection probes in the probe matrix; The control module is installed on one side of the detection shell and is used to obtain a substrate performance comprehensive evaluation report and transmit the report to a display terminal.

[0006] According to a preferred embodiment, the chip clamp comprises a clamp mounting block installed on the top of the partition plate, the detection isolation cover comprises a detection partition plate, the clamp mounting block is provided with the detection partition plate on the side, the detection partition plate is provided with a detection shell on one side, the detection shell is provided with a pulling shell for opening and closing the detection isolation cover on the side away from the detection partition plate, a detection cavity is formed between the detection partition plate, the detection shell and the pulling shell, a lifting frame is arranged on the bottom of the heating isolation cover and is used to move the four groups of bearing closed columns to the bearing position in the detection cavity or the ventilation position in the heating cavity, four groups of air outlet holes are arranged on the partition plate, and the first sealing sleeve is arranged in the four groups of air outlet holes and the through holes. When the lifting frame is located at the bearing position, the top ends of the four groups of bearing closed columns respectively pass through the four groups of through holes and the air outlet holes and are in contact with the bottom of the chip substrate, and the detection cavity and the heating cavity are not communicated. When the lifting frame is located at the ventilation position, the four groups of bearing closed columns are respectively arranged in the four groups of through holes, and the detection cavity and the heating cavity are communicated through the four groups of air outlet holes.

[0007] According to a preferred embodiment, the pulling shell is provided with a sliding block on each side, sliding grooves are arranged on the two groups of sliding blocks, limiting columns on the two sides of the detection shell are respectively arranged in the two groups of sliding grooves, limiting strip plates are further arranged on the two sides of the detection shell, and the two groups of limiting strip plates are respectively in sliding connection with the top of the two groups of sliding blocks. Two groups of through grooves are arranged on the partition plate, rotating seats are arranged on one side of the two groups of through grooves, linkage gears are arranged on the rotating seats, driving racks are arranged on the bottom of the sliding blocks, the lifting frame is connected with the two groups of lifting racks through the two groups of connecting frames on the two sides, the linkage gears are in meshing connection with the lifting racks on one side and in meshing connection with the driving racks on the top. When the pulling shell is located at the opening position to open the detection isolation cover, the lifting frame moves to the bearing position. When the pulling shell is located at the closing position to close the detection isolation cover, the lifting frame moves to the ventilation position.

[0008] According to a preferred embodiment, an ultrasonic humidifier for outputting the etching gas is arranged in the device cavity, a joint for communicating with the heating cavity is arranged on one side of the heating isolation cover, the gas outlet end of the ultrasonic humidifier is connected with the joint through a pipeline, a heating module for heating the etching gas in the heating cavity is arranged on the periphery of the heating isolation cover, a gas sensor for detecting the concentration of the etching gas is arranged in the detection cavity, and a temperature sensor is also arranged in the detection cavity; A gas pressure sensor is arranged in the detection cavity, two groups of backflow holes are arranged on the top of the partition plate and correspond to the detection cavity, a horn-shaped gas collecting cover is arranged at the top end of each group of backflow holes, a filter screen is arranged in the horn-shaped gas collecting cover, an electromagnetic regulating valve is arranged at the bottom end of each group of backflow holes, the two groups of electromagnetic regulating valves are connected with one end of the backflow pipe through a three-way pipe, a backflow check valve is arranged at the backflow end of the ultrasonic humidifier, the other end of the backflow pipe is connected with the backflow check valve, a diaphragm vacuum pump is arranged on the backflow pipe, and a heat preservation layer is arranged on the periphery of the backflow pipe.

[0009] According to a preferred embodiment, two groups of sliding channels are arranged on one side of the clamp mounting block, two groups of symmetrical sliding racks are arranged in the two groups of sliding channels, a limiting plate is arranged on one side of the clamp mounting block and corresponds to the two groups of sliding channels, a clamping block for clamping the chip substrate is arranged on one side of each group of sliding racks, a transmission hole is arranged between the two groups of sliding channels, a clamping gear is arranged at one end of the transmission hole, the top and bottom of the clamping gear are engaged with the two groups of sliding racks respectively, one end of the transmission shaft is connected with the clamping gear, the other end is connected with the output shaft of the clamping servo motor, a second sealing sleeve is arranged at the other end of the transmission hole, the second sealing sleeve is sleeved on the periphery of the transmission shaft, a mounting bracket is arranged on the side of the clamp mounting block away from the detection cavity, the clamping servo motor is mounted on one side of the mounting bracket, two groups of bearings are arranged on the mounting bracket, and the transmission shaft is arranged in the two groups of bearings.

[0010] According to a preferred embodiment, two groups of sliding holes are arranged on each of the two groups of clamping blocks, one end of the four groups of test chip probes is respectively arranged in the four groups of sliding holes, a protective shell is arranged at one end of the sliding hole, the other end of the test chip probe is arranged in the protective shell, a take-up reel is arranged on both sides of the detection shell, a corrosion-resistant connecting line is wound on the take-up reel, one end of the corrosion-resistant connecting line passes through the through hole on one side of the protective shell and is connected with the test chip probe, a connecting socket is arranged on one side of the take-up reel, the corrosion-resistant connecting line is electrically connected with the connecting socket, a third sealing sleeve is arranged in the through hole, a first spring is arranged in the protective shell, one end of the first spring is in contact with the test chip probe, the take-up force of the take-up reel is greater than the minimum elastic force of the first spring, and an impedance tester is arranged in the placement cavity, and the impedance tester is connected with the two groups of connecting sockets through wires.

[0011] According to a preferred embodiment, the probe matrix comprises a plurality of groups of probes, the detection isolation cover is provided with a plurality of groups of mounting barrels, the bottom ends of the plurality of groups of detection probes are respectively arranged in the plurality of groups of mounting barrels, the top of the detection isolation cover is provided with a mounting bracket, a plurality of grooves are formed in the bottom of the mounting bracket and correspond to the plurality of groups of detection probes, a plurality of second springs are arranged between the plurality of grooves and the plurality of groups of detection probes, and the plurality of second springs are respectively in contact with the top ends of the plurality of groups of detection probes; A plurality of mounting holes are formed in the top of the mounting bracket, a displacement sensor is arranged in each of the plurality of mounting holes, each of the plurality of groups of detection probes is provided with a sensing protrusion, the plurality of displacement sensors are respectively directed to the plurality of sensing protrusions, the top of the mounting bracket is provided with a data connector, a pinhole socket is arranged on each side of the data connector, and the plurality of displacement sensors and the probe matrix are connected to the two groups of pinhole sockets through wires and two groups of pinhole plugs respectively.

[0012] A detection method of a chip substrate performance detection device, which applies the chip substrate performance detection device, comprising: An impedance spectrum sequence is obtained based on a test chip probe, a pad electrical performance matrix sequence is obtained based on an AC / DC electrical parameter tester, and a topography point cloud sequence is obtained based on a displacement sensor; A detection environment parameter log is obtained based on dynamic control operation of an environmental cabin according to a preset corrosion gas concentration and temperature curve; A degradation feature vector set is obtained based on the impedance spectrum sequence, the pad electrical performance matrix sequence, the topography point cloud sequence, and the detection environment parameter log, a substrate performance comprehensive evaluation report is obtained based on the degradation feature vector set, and the substrate performance comprehensive evaluation report is transmitted to a display terminal.

[0013] According to a preferred embodiment, an impedance spectrum sequence is obtained based on a test chip probe, a pad electrical performance matrix sequence is obtained based on an AC / DC electrical parameter tester, and a topography point cloud sequence is obtained based on a displacement sensor, comprising: An impedance tester injects an AC test signal to electrodes at two ends of a chip substrate through two groups of test chip probes, and simultaneously measures a phase difference and an amplitude response of a voltage and a current to obtain an impedance spectrum sequence; Each probe in the probe matrix corresponds to a pad on the substrate, an AC / DC electrical parameter tester sends a row selection signal to the probe matrix, selects all probes in the first row of the probe matrix, and sequentially activates the probes in the current row to apply a micro-current to the pads on the chip substrate in column order, measures a conduction resistance value between the pads and a ground leakage current value, completes scanning of the first row, jumps to the second row to repeat column scanning, and until all rows are scanned, a pad electrical performance matrix sequence is obtained; Real-time acquisition of the Z-axis displacement of each probe in the probe matrix based on the displacement sensor, generation of a substrate grid based on the top surface of the chip substrate, mapping of the X, Y coordinates of each probe to the substrate grid to obtain a plurality of substrate grid nodes, and assigning a height value to each substrate grid node based on the initial Z-axis coordinate of the probe and the Z-axis displacement value, and storing each substrate grid node as a topography point cloud sequence in (X, Y, Z) format.

[0014] According to a preferred embodiment, a degradation feature vector set is obtained based on the impedance spectrum sequence, the pad electrical performance matrix sequence, the topography point cloud sequence and the detection environment parameter log, a substrate performance comprehensive evaluation report is obtained based on the degradation feature vector set and is transmitted to a display terminal, including: The feature frequency point amplitude attenuation rate is extracted from the impedance spectrum sequence as a material degradation index, the pad failure ratio and the average resistance change rate are extracted from the electrical performance matrix sequence as electrical degradation indexes, and the surface curvature change amount is fitted from the topography point cloud sequence as a mechanical deformation index; Based on the detection environment parameter log, the maximum temperature value and the corrosion gas exposure time are extracted, the material degradation index, the electrical degradation index and the mechanical deformation index are associated with the maximum temperature value and the corrosion gas exposure time, the associated stress data are obtained, and the material degradation index, the electrical degradation index, the mechanical deformation index and the associated stress data constitute the degradation feature vector set; The degradation feature vector set is input into a pre-trained random forest classification model, the random forest classification model outputs an anti-corrosion grade classification result and a confidence according to a preset grading rule, an anti-thermal deformation index in the [0, 100] interval is obtained based on the mechanical deformation index, and the position coordinates of the failed pads on the chip substrate are marked; Based on the anti-corrosion grade, the anti-thermal deformation index and the position coordinates of the failed pads, a substrate performance comprehensive evaluation report is generated and transmitted to a display terminal.

[0015] Compared with the prior art, the present application has the following beneficial effects: 1. By connecting the detection cavity and the heating cavity, combining the impedance tester, the AC / DC electrical parameter tester and the displacement sensor, the impedance spectrum sequence, the pad electrical performance matrix sequence and the topography point cloud sequence of the chip substrate can be obtained synchronously, the high temperature and corrosion environment can be simulated dynamically, and the detection data can truly reflect the performance state of the chip substrate under actual working conditions, solving the problem that the traditional chip substrate performance detection device needs to be transferred multiple times during detection, so that the chip substrate does not need to be transferred between different detection equipment, avoiding the interference of environmental changes or mechanical contact on the detection data during the transfer process.

[0016] 2. During the detection process, gas sensors, temperature sensors, and air pressure sensors collect detection environment parameters in real time. The displacement sensor continuously obtains the probe Z-axis displacement data to update the morphology point cloud sequence. The impedance tester and AC / DC parameter tester synchronously record the changes in electrical parameters to obtain the pad electrical performance matrix sequence and morphology point cloud sequence. All data are integrated by timestamp to obtain the degradation feature vector set to capture the performance degradation trajectory of the chip substrate under different temperatures and corrosion concentrations. This solves the problem that traditional detection is difficult to track dynamic performance changes, and can track the dynamic changes of chip substrate performance as the detection process progresses in real time.

[0017] 3. The chip fixture can clamp substrates of different sizes through the transmission structure of the sliding rack and the clamping gear, eliminating the need for frequent fixture replacement; the test chip probe uses the cooperation of the first spring and the take-up reel to ensure stable contact with the substrate electrode, avoiding poor contact or damage to the substrate; the probe matrix uses the guidance of the second spring and the mounting tube to enable the bottom of the probe to fit the pad on the chip substrate. At the same time, the displacement sensor faces the sensing protrusion on the side of the probe to monitor the probe status in real time, improving the reliability of the detection device.

[0018] 4. By pulling the linkage structure between the shell and the lifting frame through the driving rack, linkage gear and lifting rack, the synchronous linkage of the opening and closing action of the detection isolation cover and the position switching of the load-bearing closing column is realized. There is no need to set up an additional independent driving component to adjust the lifting frame, which improves the convenience of device operation and the continuity of the detection process. When the operator pushes and pulls the shell to move it from the open position to the closed position to close the detection isolation cover, the driving rack at the bottom of the sliding block will synchronously drive the linkage gear on the rotating seat to rotate, and the linkage gear further drives the lifting racks on both sides of the lifting frame to move, so that the lifting frame switches from the load-bearing position to the ventilation position, allowing the detection The cavity and the heating cavity are connected through the air outlet, so that the corrosive gas in the heating cavity can enter the detection cavity; and when the shell is pulled from the closed position to the open position to open the detection isolation cover, the driving rack will reversely drive the lifting rack through the linkage gear, so that the lifting frame is reset to the bearing position, allowing the bearing sealing column to pass through the air outlet and contact the bottom of the chip substrate, thereby achieving stable support for the substrate and blocking the connection between the detection cavity and the heating cavity. The linkage structure reduces the preparation steps before detection, avoids gas leakage and unstable substrate support caused by the asynchronous movement of the detection isolation cover and the lifting frame, and improves the safety of the detection process. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the structure of the present invention after assembly; Figure 2 It is a schematic diagram of the structure of the present invention after expansion; Figure 3 It is a structural diagram of the AC and DC parameter tester and the impedance tester in the present invention; Figure 4 is a structure schematic diagram of the clamp block and the sliding rack after assembly in the application; Figure 5 is a structure schematic diagram of the clamp block and the sliding rack after disassembly in the application; Figure 6 is a structure schematic diagram of the mounting bracket and the detection probe after assembly in the application; Figure 7 is a structure schematic diagram of the mounting bracket and the detection probe after disassembly in the application; Figure 6 is a structure schematic diagram of the mounting bracket and the detection probe after disassembly in the application; Figure 8 is a structure schematic diagram of the protective shell and the clamp block after assembly in the application; Figure 9 is a structure schematic diagram of the test chip probe and the protective shell after disassembly in the application; Figure 10 is a structure schematic diagram of the bearing closed column and the heating isolation cover after disassembly in the application; Figure 11 is a structure schematic diagram of the ultrasonic humidifier and the diaphragm vacuum pump after assembly in the application; Figure 12 Figure 11 is a structure schematic diagram of the ultrasonic humidifier and the diaphragm vacuum pump after disassembly in the application; Figure 13 is a step flow chart of the detection method of the chip substrate performance detection device in the application; Figure 14 is a step flow chart of obtaining the substrate performance comprehensive evaluation report in the detection method of the chip substrate performance detection device in the application.

[0020] In the figure, the corresponding relationship between the component name and the figure number is as follows: ​101, detection housing; 102, partition plate; 103, placement cavity; 105, detection cavity; 107, heating cavity; 108, heating isolation cover; 109, chip substrate; 115, control module; 116, display terminal; 117, detection partition plate; 118, detection shell; 119, pulling housing; 120, bearing closed column; 121, lifting frame; 122, air outlet hole; 123, through hole; 124, first sealing sleeve; 125, sliding block; 126, sliding channel; 127, limiting column; 128, limiting strip; 129, rotating seat; 130, linkage gear; 131, driving rack; 132, connecting frame; 133, lifting rack; 134, gas sensor; 135, temperature sensor; 136, air pressure sensor; 201, clamp mounting block; 202, sliding groove; 203, sliding rack; 204, limiting plate; 205, clamping block; 206, transmission hole; 207, clamping gear; 208, transmission shaft; 209, clamping servo motor; 210, second sealing sleeve; 211, mounting frame; 212, bearing; 301, ultrasonic humidifier; 302, joint; 303, heating module; 305, backflow hole; 306, horn-shaped gas collection cover; 307, filter screen; 308, electromagnetic regulating valve; 309, tee; 310, backflow pipe; 311, backflow check valve; 312, diaphragm vacuum pump; 313, thermal insulation layer; 401, sliding hole; 402, test chip probe; 403, impedance tester; 404, protective shell; 405, take-up reel; 406, corrosion-resistant connecting line; 407, connecting socket; 408, first spring; 501, detection probe; 502, AC / DC electrical parameter tester; 503, displacement sensor; 504, mounting cylinder; 505, mounting bracket; 506, second spring; 507, mounting hole; 508, induction protrusion; 509, data joint; 510, pinhole socket; 511, pinhole plug. DETAILED DESCRIPTION

[0021] The embodiments of the present application will be further described in details below with reference to the accompanying drawings and examples. The following examples are used to illustrate the technical solutions of the present application, but cannot be used to limit the protection scope of the present application.

[0022] Embodiment: as shown in the accompanying drawings Figures 1 to 12 The present application provides a chip substrate performance detection device, comprising: The detection housing 101, the detection housing 101 is provided with a partition plate 102 to form a placement cavity 103 and a device cavity, the top of the partition plate 102 is provided with a detection isolation cover forming a detection cavity 105, the bottom of the partition plate 102 is provided with a heating isolation cover 108 forming a heating cavity 107, and the detection cavity 105 and the heating cavity 107 are communicated; ​A chip clamp is installed in the detection cavity 105, and the chip clamp is used to fix the chip substrate 109 to be detected. In use, the chip substrate 109 is placed in the clamping area of the chip clamp, and the chip substrate 109 is kept stable by the chip clamp to avoid displacement of the substrate affecting data acquisition during detection. An impedance tester 403 is electrically connected with the four sets of test chip probes 402 installed on the chip clamp. The four sets of test chip probes 402 are connected with the electrodes on the chip substrate 109. The impedance tester 403 is used to obtain an impedance spectrum sequence. During detection, the impedance tester 403 outputs an alternating current test signal to the four sets of test chip probes 402. The signal is transmitted to the electrodes of the chip substrate 109 through the test chip probes 402. The impedance tester 403 synchronously collects the voltage and current responses at both ends of the electrodes, and generates an impedance spectrum sequence according to the phase difference and amplitude change of the voltage and current. An AC / DC electrical parameter tester 502 is electrically connected with the probe matrix installed at the top of the detection isolation cover. The bottom end of the probe matrix is in contact with the pads on the chip substrate 109. The AC / DC electrical parameter tester 502 is used to obtain a pad electrical performance matrix sequence. In use, the AC / DC electrical parameter tester 502 sends a row selection signal to the probe matrix to activate the detection probes 501 in the probe matrix row by row. The activated detection probes 501 apply a micro-current to the corresponding pads. The AC / DC electrical parameter tester 502 measures the on-resistance and ground leakage current between the pads in real time, and arranges the test data of all pads in rows and columns to form a pad electrical performance matrix sequence. A plurality of displacement sensors 503 for obtaining vertical displacement feedback data are arranged on the probe matrix. The detection ends of the plurality of displacement sensors 503 are respectively directed to the plurality of detection probes 501 in the probe matrix. During detection, the displacement sensors 503 continuously monitor the Z-axis displacement of the corresponding detection probes 501, and judge the changes in the topography of the chip substrate 109 according to the displacement changes. A control module 115 is installed on one side of the detection housing 101, and is used to obtain a substrate performance comprehensive evaluation report and transmit the report to a display terminal 116. The control module 115 receives all data transmitted by the impedance tester 403, the AC / DC electrical parameter tester 502, and the displacement sensor 503, analyzes the data in combination with the environmental parameters during detection, generates a comprehensive evaluation report containing the heat resistance, corrosion resistance, and electrical stability of the chip substrate 109, and transmits the report to the display terminal 116. The operator can check the detection results through the display terminal 116.

[0023] Specifically, by connecting the detection chamber 105 with the heating chamber 107, the heating module 303 on the side of the heating isolation cover 108 heats the corrosive gas in the heating chamber 107 during detection, and the heated corrosive gas enters the detection chamber 105 through the air outlet 122 opened on the partition plate 102, thereby realizing a dynamic simulation of the high temperature and corrosion composite environment in which the chip substrate 109 is located; in combination with the impedance tester 403, the AC and DC parameter tester 502 and the displacement sensor 503, the impedance spectrum sequence, the pad electrical performance matrix sequence and the morphology point cloud sequence of the chip substrate 109 can be obtained synchronously, and the impedance spectrum sequence, the pad electrical performance matrix sequence and the morphology point cloud sequence can be converted into the impedance spectrum sequence and the pad electrical performance matrix sequence. The morphological point cloud sequence is synchronously transmitted to the control module 115 to ensure that the detection data can truly reflect the performance status of the chip substrate 109 under actual working conditions; it solves the problem that the traditional chip substrate performance detection device must first complete the high-temperature treatment of the substrate in the heating equipment during the detection process, and then transfer it to the electrical detection equipment for parameter testing. During the transfer process, the substrate temperature drops and the surface may be contaminated with impurities. The device connects the detection chamber 105 with the heating chamber 107 and integrates multiple detection modules, so that the chip substrate 109 is always in the same detection environment to complete multi-dimensional testing, avoiding interference with the detection data due to environmental changes or mechanical contact during the transfer process.

[0024] Please refer to Figure 10 As shown, the chip fixture includes a fixture mounting block 201 mounted on the top of the partition plate 102, and the detection isolation cover includes a detection partition 117. The detection partition 117 is provided on the periphery of the fixture mounting block 201, and a detection housing 118 is provided on one side of the detection partition 117. A pull housing 119 for opening and closing the detection isolation cover is provided on the side of the detection housing 118 away from the detection partition 117. The operator can open and close the detection isolation cover by pulling or pushing the pull housing 119; when opened, it is used to place or remove the chip substrate 109. After closing, a closed detection chamber 105 can be formed between the detection partition 117, the detection shell 118 and the pulling shell 119, providing a closed environment for the detection of the chip substrate 109, and preventing external environmental factors from interfering with the detection process; a sealing gasket is provided between the detection isolation cover and the heating isolation cover 108 and the partition plate 102, and a sealing layer is provided at the gap between the detection partition 117, the detection shell 118 and the pulling shell 119; prevent the corrosive gas in the detection chamber 105 or the corrosive gas in the heating chamber 107 from leaking from the gap; A lifting frame 121 is provided at the bottom of the heating isolation cover 108 for moving the four groups of carrying and sealing columns 120 to the carrying position in the detection chamber 105 or the ventilation position in the heating chamber 107. The four groups of carrying and sealing columns 120 correspond to the four groups of positioning grooves at the bottom of the chip substrate 109, respectively. Four groups of air outlet holes 122 are provided on the partition plate 102. The air outlet holes 122 are used to achieve gas circulation between the detection chamber 105 and the heating chamber 107. Four groups of through holes 123 are provided at the bottom of the heating isolation cover 108. A first sealing sleeve 124 is provided in each of the four groups of air outlet holes 122 and the through holes 123 to prevent corrosive gas from leaking from the gap between the hole wall and the carrying and sealing columns 120. Furthermore, when the lifting frame 121 is in the carrying position, the lifting frame 121 drives the four groups of carrying closed columns 120 to move upward, so that the top ends of the four groups of carrying closed columns 120 pass through the four groups of through holes 123 and the air outlet holes 122 respectively and contact the bottom of the chip substrate 109. At this time, the carrying closed columns 120 can support the chip substrate 109, and at the same time, the carrying closed columns 120 block the air outlet holes 122, so that the detection chamber 105 and the heating chamber 107 are not connected; when the lifting frame 121 is in the ventilation position, the lifting frame 121 drives the four groups of carrying closed columns 120 to move downward, so that the four groups of carrying closed columns 120 are respectively arranged in the four groups of through holes 123. At this time, the air outlet holes 122 are no longer blocked, and the detection chamber 105 and the heating chamber 107 are connected through the four groups of air outlet holes 122. The corrosive gas heated by the heating module 303 in the heating chamber 107 can enter the detection chamber 105 through the air outlet holes 122, simulating a high-temperature corrosion environment for the chip substrate 109.

[0025] Specifically, when conducting high-temperature corrosion performance testing of the chip substrate 109, the operator first pulls the shell 119 to open the detection isolation cover, places the positioning grooves at the bottom of the chip substrate 109 on the four sets of supporting sealing columns 120, starts the chip clamp to clamp the chip substrate 109, and then pushes the shell 119 to close the detection isolation cover, the lifting frame 121 moves to the ventilation position, the supporting sealing column 120 moves down to the through hole 123, the air outlet 122 is connected, and the heating module 303 on the side of the heating isolation cover 108 heats the corrosive gas in the heating chamber 107. The heated corrosive gas enters the detection chamber 105 through the air outlet 122, so that a high-temperature corrosion environment is formed in the detection chamber 105.

[0026] Please refer to Figure 10As shown, the two sides of the pulling shell 119 are each provided with a sliding block 125, and the two groups of sliding blocks 125 are each provided with a sliding groove 126, and the limiting columns 127 on the two sides of the detection shell 118 are respectively arranged in the two groups of sliding grooves 126, and the two sides of the detection shell 118 are each provided with a limiting strip plate 128, and the two groups of limiting strip plates 128 are respectively and slidably connected with the top of the two groups of sliding blocks 125, so as to provide a guide for pulling or pushing the pulling shell 119, limit the up-down displacement of the sliding block 125, and ensure the stability of the movement of the pulling shell 119; the dividing plate 102 is provided with two groups of through grooves, and the two groups of through grooves are each provided with a rotating seat 129, and the rotating seat 129 is provided with a linkage gear 130, and the linkage gear 130 is rotatable on one side of the rotating seat 129, and the bottom of the sliding block 125 is provided with a driving gear rack 131, and the two sides of the lifting frame 121 are respectively connected with two groups of lifting gear racks 133 through two groups of connecting frames 132, and the connecting frame 132 integrally fixes the lifting frame 121 and the lifting gear rack 133, so that the movement of the lifting gear rack 133 can directly drive the lifting frame 121 to move synchronously, and one side of the linkage gear 130 is engaged with the lifting gear rack 133, and the top is engaged with the driving gear rack 131, when the driving gear rack 131 moves with the sliding block 125, the linkage gear 130 is driven to rotate, and in turn drives the lifting gear rack 133 to move up and down.

[0027] Specifically, when the pulling shell 119 is located at the opening position to open the detection isolation cover, the operator can place the chip substrate 109 on the clamp mounting block 201 or take it out, at this time, the lifting frame 121 moves to the bearing position, and the four groups of bearing closed columns 120 pass through the air outlet holes 122 and contact the bottom of the chip substrate 109, thereby stably supporting the chip substrate 109; when the pulling shell 119 is located at the closing position to close the detection isolation cover, the detection cavity 105 forms a closed space, at this time, the lifting frame 121 moves to the ventilation position, and the bearing closed column 120 is withdrawn into the through hole 123, and the detection cavity 105 is communicated with the heating cavity 107 through the air outlet hole 122.

[0028] Furthermore, by pulling the shell 119 and the lifting frame 121 through the linkage structure of driving the rack 131, the linkage gear 130 and the lifting rack 133, the synchronous linkage of the opening and closing action of the detection isolation cover and the position switching of the load-bearing sealing column 120 is achieved, without the need to set up an additional independent driving component to adjust the lifting frame 121, thereby improving the convenience of device operation and the consistency of the detection process; when the operator pushes and pulls the shell 119 to move it from the open position to the closed position to close the detection isolation cover, the sliding block 125 slides along the limiting column 127 and the limiting strip plate 128, and the driving rack 131 at the bottom of the sliding block 125 will synchronously drive the linkage gear 130 on the rotating seat 129 to rotate, and the linkage gear 130 further drives the lifting racks 133 on both sides of the lifting frame 121 to move downward, and drives the lifting racks 133 on both sides of the lifting frame 121 to move downward through the connecting frame 132 The lifting frame 121 switches from the carrying position to the ventilation position, allowing the detection chamber 105 and the heating chamber 107 to be connected through the air outlet 122, so that the heated corrosive gas in the heating chamber 107 can smoothly enter the detection chamber 105, providing a high-temperature corrosion detection environment for the chip substrate 109; and when the shell 119 is pulled from the closed position to the open position to open the detection isolation cover, the sliding block 125 moves in the opposite direction, driving the rack 131 to reversely drive the lifting rack 133 upward through the linkage gear 130, so that the lifting frame 121 is reset to the carrying position, allowing the carrying sealing column 120 to pass through the air outlet 122 and contact the bottom of the chip substrate 109, thereby achieving stable support for the chip substrate and blocking the connection between the detection chamber 105 and the heating chamber 107, preventing the gas in the heating chamber 107 from leaking when the detection isolation cover is opened.

[0029] Please refer to Figure 8 、 Figure 11 and Figure 12 As shown, an ultrasonic humidifier 301 for outputting corrosive gas is provided in the equipment cavity. When in use, a corrosive liquid of a preset concentration is added to the container on the top of the ultrasonic humidifier 301. After the ultrasonic humidifier 301 is started, it atomizes the corrosive liquid into corrosive gas through ultrasonic vibration. A joint 302 communicating with the heating chamber 107 is provided on one side of the heating isolation cover 108. The gas outlet end of the ultrasonic humidifier 301 is connected to the joint 302 through a pipeline. The atomized corrosive gas can enter the heating chamber 107 along the pipeline through the joint 302. A heating module 303 for heating the corrosive gas in the heating chamber 107 is provided on the peripheral side of the heating isolation cover 108. The heating module 303 heats the corrosive gas entering the heating chamber 107 to the temperature required for detection, thereby meeting the detection requirements of the chip substrate 109 in a high-temperature corrosive environment. A gas sensor 134 for detecting the concentration of the corrosive gas is provided in the detection chamber 105, and a temperature sensor 135 is also provided in the detection chamber 105.

[0030] The detection cavity 105 is provided with an air pressure sensor 136, and two groups of backflow holes 305 are arranged on the top of the partition plate 102 corresponding to the detection cavity 105, which are used to realize the backflow of the corrosion gas in the detection cavity 105. The top end of the two groups of backflow holes 305 is provided with a horn-shaped gas collecting cover 306, and the horn-shaped gas collecting cover 306 is provided with a filter screen 307. The filter screen 307 can filter the impurities that may be carried in the corrosion gas, so as to prevent the impurities from flowing back into the ultrasonic humidifier 301 and causing blockage or pollution. The bottom end of the two groups of backflow holes 305 is provided with an electromagnetic regulating valve 308, which is controlled by the control module 115 to open and close and adjust the opening degree, so as to adjust the flow of the backflow gas. The two groups of electromagnetic regulating valves 308 are connected with one end of a backflow pipe 310 through a three-way pipe 309. The corrosion gas filtered by the filter screen 307 can enter the electromagnetic regulating valve 308 through the backflow hole 305, and then be collected into the backflow pipe 310 through the three-way pipe 309. The backflow end of the ultrasonic humidifier 301 is provided with a backflow check valve 311, which can prevent the corrosive liquid or the backflow corrosion gas in the ultrasonic humidifier 301 from flowing back into the backflow pipe 310, so as to ensure the one-way backflow of the gas. The other end of the backflow pipe 310 is connected with the backflow check valve 311, and a diaphragm vacuum pump 312 is arranged on the backflow pipe 310, which provides the backflow power for the corrosion gas in the detection cavity 105, so as to realize the recycling of the corrosion gas. The backflow pipe 310 is provided with a heat preservation layer 313 on the side, which can reduce the heat loss of the corrosion gas in the backflow pipe 310, so as to prevent the gas from condensing into liquid due to the temperature drop in the backflow process.

[0031] Specifically, the environmental parameters in the detection process are recorded by the gas sensor 134, the temperature sensor 135 and the air pressure sensor 136. The gas sensor 134 collects the concentration data of the corrosion gas in the detection cavity 105 every 1 minute, the temperature sensor 135 collects the temperature data in the detection cavity 105 every 30 seconds, and the air pressure sensor 136 collects the pressure data in the cavity every 2 minutes. These data are transmitted to the control module 115 in real time according to the time stamp, and the control module 115 integrates the data into a detection environmental parameter log.

[0032] Please refer to Figure 4 and Figure 5As shown, the clamp mounting block 201 is provided with two groups of sliding channels 202 on one side, and two groups of symmetrical sliding racks 203 are arranged in the two groups of sliding channels 202 respectively. The two groups of sliding channels 202 provide a moving track for the two groups of sliding racks 203. In use, the two groups of sliding racks 203 can slide along the extension direction of the sliding channels 202. The clamp mounting block 201 is also provided with a limiting plate 204 corresponding to the two groups of sliding channels 202 on one side, which can limit the sliding racks 203 in the sliding channels 202 to prevent them from falling out. The two groups of sliding racks 203 are provided with clamping blocks 205 for clamping the chip substrate 109 on one side. The inner side of the clamping block 205 is provided with a buffer layer in contact with the two side edges of the chip substrate 109. The relative movement of the clamping block 205 realizes the clamping or loosening of the chip substrate 109. The two groups of sliding channels 202 are provided with a transmission hole 206 therebetween. The transmission hole 206 is provided with a clamping gear 207 at one end. The top and bottom of the clamping gear 207 are engaged with the two groups of sliding racks 203 respectively. When the clamping gear 207 rotates, the two groups of sliding racks 203 can be driven to move relatively at the same time through the gear transmission. The transmission shaft 208 is connected with the clamping gear 207 at one end and connected with the output shaft of the clamping servo motor 209 at the other end. After the clamping servo motor 209 is energized and started, the rotary power of the output shaft can be directly transmitted to the clamping gear 207 through the transmission shaft 208, driving the clamping gear 207 and the transmission shaft 208 to rotate synchronously. The clamping servo motor 209 is a servo motor, which can obtain a rotary torque through force feedback. The other end of the transmission hole 206 is provided with a second sealing sleeve 210, which is sleeved on the side of the transmission shaft 208 to fill the gap between the transmission shaft 208 and the hole wall of the transmission hole 206, preventing the corrosive gas in the detection cavity 105 from leaking out of the transmission hole 206 to the outside of the clamp mounting block 201, avoiding the corrosive gas from contacting and damaging the clamping servo motor 209 or other external components. The side of the clamp mounting block 201 away from the detection cavity 105 is provided with a mounting frame 211, which provides support for the clamping servo motor 209. The clamping servo motor 209 is installed on one side of the mounting frame 211. The mounting frame 211 is provided with two groups of bearings 212. The transmission shaft 208 is arranged in the two groups of bearings 212, which reduces the resistance when the transmission shaft 208 rotates, makes the rotation of the transmission shaft 208 more smooth, and reduces the error of the rotary torque obtained by the clamping servo motor 209.

[0033] Specifically, the clamping servo motor 209 is started to drive the transmission shaft 208 and the clamping gear 207 to rotate. The rotation of the clamping gear 207 causes the two groups of sliding racks 203 engaged with it to move relatively, so as to adjust the distance between the two groups of clamping blocks 205 to clamp the chip substrate 109.

[0034] Please refer to Figure 8 and Figure 9As shown, two groups of clamping blocks 205 are provided with two groups of sliding holes 401, and four groups of test chip probes 402 are respectively arranged in the four groups of sliding holes 401. The sliding holes 401 provide axial movement space for the test chip probes 402, so that the test chip probes 402 can be extended or retracted along the axial direction of the sliding holes 401, and the one end of the test chip probes 402 can be flexibly contacted or separated from the electrodes on the chip substrate 109. The sliding hole 401 is provided with a protective shell 404, and the first spring 408 is arranged in the protective shell 404. One end of the first spring 408 is in contact with the test chip probe 402. When the test chip probe 402 is in contact with the electrodes of the chip substrate 109, the first spring 408 will be compressed and generate a reverse elastic force, so that the probe always maintains the adhesion with the electrode. The protective shell 404 wraps the other end of the test chip probe 402 and the first spring 408, which can block the corrosive gas in the detection cavity 105 from directly contacting the first spring 408 and the rear end of the test chip probe 402. The other end of the test chip probe 402 is arranged in the protective shell 404, so that it can be stably moved under the joint guidance of the protective shell 404 and the sliding hole 401. The detection shell 118 is provided with a take-up reel 405 on both sides. The take-up reel 405 can wind or release the corrosion-resistant connecting line 406 through the spring structure of the take-up reel 405. The corrosion-resistant connecting line 406 is wound on the take-up reel 405 and is made of acid and alkali resistant material, which can maintain stable conductivity in a corrosive environment. One end of the corrosion-resistant connecting line 406 is connected with the test chip probe 402 through the through hole on one side of the protective shell 404, so as to realize the electrical connection between the test chip probe 402 and the external equipment. The winding force of the take-up reel 405 is greater than the minimum elastic force of the first spring 408, so that when the test chip probe 402 is extended or retracted due to the change of the substrate thickness or the movement of the clamping block, the corrosion-resistant connecting line 406 can be wound in time by the take-up reel 405, so as to avoid the relaxation and winding of the connecting line. One side of the take-up reel 405 is provided with a connecting socket 407, and the corrosion-resistant connecting line 406 is electrically connected with the connecting socket 407. The connecting socket 407 serves as an intermediate interface, which facilitates the connection between the corrosion-resistant connecting line 406 and the lead wire of the impedance tester 403. A third sealing sleeve is arranged in the through hole to prevent the corrosive gas in the detection cavity 105 from leaking from the through hole. The impedance tester 403 is arranged in the placement cavity 103, and the impedance tester 403 is connected with the two groups of connecting sockets 407 through lead wires, so that the impedance tester 403 can obtain the impedance spectrum sequence of the chip substrate 109 through the test chip probe 402.

[0035] Specifically, when the clamping block 205 clamps the chip substrate 109, the end of the test chip probe 402 facing the substrate will contact the electrode on the chip substrate 109, the test chip probe 402 will retract into the protective shell 404 along the sliding hole 401, the compression amount of the first spring 408 increases, and the elastic force increases accordingly, but the test chip probe 402 can still ensure contact with the electrode, and the elastic force pushes the test chip probe 402 to maintain contact with the electrode, ensuring stable transmission of electrical signals; at the same time, the corrosion-resistant connecting line 406 is pulled out due to the retraction of the probe, and the take-up reel 405 will generate a winding force under the action of its own spring, so that the connecting line remains taut and does not relax.

[0036] Please refer to FIGS. 1-3 Figure 6 and Figure 7 As shown in the drawings, the probe matrix includes a plurality of detection probes 501, the detection isolation cover is provided with a plurality of mounting barrels 504, the bottom ends of the plurality of detection probes 501 are respectively arranged in the plurality of mounting barrels 504, and the mounting barrels 504 provide vertical movement guidance for the detection probes 501; the detection isolation cover is provided with a mounting bracket 505 at the top, a plurality of grooves are formed in the bottom of the mounting bracket 505 and correspond to the plurality of detection probes 501, a plurality of second springs 506 are arranged between the plurality of grooves and the plurality of detection probes 501, respectively, the plurality of second springs 506 are in contact with the top ends of the plurality of detection probes 501, respectively, when the bottom ends of the detection probes 501 contact the pads on the chip substrate 109, the second springs 506 will be compressed and generate a downward elastic force, so that the detection probes 501 always maintain close contact with the pads, ensuring stable transmission of electrical signals; a plurality of mounting holes 507 are formed in the top of the mounting bracket 505, the plurality of mounting holes 507 provide mounting positions for the displacement sensors 503, the displacement sensors 503 are arranged in the plurality of mounting holes 507, respectively, the displacement sensors 503 are used to detect the vertical displacement of the detection probes 501, a sensing protrusion 508 is arranged on one side of the plurality of detection probes 501, the sensing protrusion 508 moves synchronously with the detection probes 501, the plurality of displacement sensors 503 are directed towards the plurality of sensing protrusions 508, respectively, when the detection probes 501 move up and down, the positions of the sensing protrusions 508 change accordingly, and the displacement sensors 503 monitor the position changes of the sensing protrusions 508; a data connector 509 is arranged on the top of the mounting bracket 505, the data connector 509 is used to collect signals of the detection probes 501 and the displacement sensors 503, needle hole sockets 510 are arranged on both sides of the data connector 509, the plurality of displacement sensors 503 and the probe matrix are connected to the two groups of needle hole sockets 510 through wires and two groups of needle hole plugs 511, respectively; the data connector 509 is electrically connected to the AC / DC electrical parameter tester 502 arranged in the placement cavity 103, so that the AC / DC electrical parameter tester 502 can obtain the pad electrical performance matrix sequence through the detection probes 501.

[0037] Specifically, when the detection cover is closed, the bottom ends of the multiple sets of detection probes 501 are in one-to-one correspondence with the multiple pads on the chip substrate 109 under the elastic force of the second springs 506. During the detection process, the AC / DC electrical parameter tester 502 sends a row selection signal to the detection probes 501 to activate the probes row by row. The activated detection probes 501 apply a micro-current to the corresponding pads, and then transmit the detected on-resistance, leakage current and other signals back to the AC / DC electrical parameter tester 502 to form a pad electrical performance matrix sequence. At the same time, if the chip substrate 109 deforms during the detection process, the detection probes 501 at the corresponding positions will move accordingly. The displacement sensor 503 monitors the position of the sensing protrusion 508 in real time. The chip substrate 109 deforms to cause the detection probes 501 to produce vertical displacement, and the sensing protrusion 508 moves accordingly. After the displacement sensor 503 captures the displacement, the data is transmitted to the data connector 509 through the wire, the pinhole plug 511 and the pinhole socket 510, and then fed back to the control module 115 to generate a topography point cloud sequence.

[0038] As shown in Figure 13 and Figure 14 The present application also provides a detection method of a chip substrate performance detection device, which is applied to the chip substrate performance detection device and comprises the following steps. S10: Based on the test chip probe, an impedance spectrum sequence is obtained, based on the AC / DC electrical parameter tester, a pad electrical performance matrix sequence is obtained, and based on the displacement sensor, a topography point cloud sequence is obtained.

[0039] Specifically, the impedance tester 403 injects AC test signals into the electrodes at both ends of the chip substrate 109 through the two sets of test chip probes 402. During the injection process covering multiple frequency points from 1 kHz to 1 MHz, the test chip probes 402 simultaneously receive the electrical signals fed back by the electrodes of the chip substrate 109. The impedance tester 403 synchronously measures the phase difference and amplitude response of voltage and current at each frequency point, and arranges these data in frequency order to form an impedance spectrum sequence.

[0040] Each detection probe 501 in the probe matrix corresponds to a pad on the chip substrate 109. The AC / DC electrical parameter tester 502 sends a row selection signal to the probe matrix, which activates all detection probes 501 in the first row to be in a standby state, and then sends an activation signal to the detection probes 501 in the current row in sequence by column. The activated detection probes 501 apply current to the corresponding pad, and at the same time the AC / DC electrical parameter tester 502 measures the conduction resistance value between adjacent pads and the leakage current value between the pad and the ground through other detection probes 501. After scanning all columns in the first row, the row selection signal is switched to the second row, and the above column scanning process is repeated until all detection probes 501 in all rows are scanned. The conduction resistance values and leakage current values of all pads are recorded according to the row and column positions to form a pad electrical performance matrix sequence.

[0041] The displacement sensor 503 is used to obtain the Z-axis displacement of each detection probe 501 in the probe matrix in real time, and a substrate grid is generated according to the actual size of the chip substrate 109. The X and Y coordinates of each detection probe 501 in the probe matrix are mapped to the specific substrate grid nodes. The initial Z-axis coordinate of the detection probe 501 when it does not contact the chip substrate 109 is used as the initial Z-axis coordinate, and the real-time Z-axis displacement value is subtracted from the initial Z-axis coordinate to obtain the height value of each substrate grid node. The X coordinate, Y coordinate and height value of each substrate grid node are stored in the format of (X, Y, Z) in sequence to form a topography point cloud sequence.

[0042] For example, when the internal circuit of the chip substrate 109 is oxidized in a high-temperature corrosion environment, the amplitude response of a certain frequency band will decrease significantly. The impedance spectrum sequence can capture this change, and if the conduction resistance value at a certain position in the probe matrix is much higher than the surrounding values, it indicates that the pad at this position may have a virtual welding or oxidation problem. When the chip substrate 109 is locally warped at high temperature, the Z value of the substrate grid nodes in the corresponding area will increase or decrease, and the topography point cloud sequence can locate the warped area and deformation degree.

[0043] S11: Perform dynamic control operation on the environmental chamber based on the preset corrosion gas concentration and temperature curve to obtain a detection environment parameter log. The preset corrosion gas concentration curve and temperature curve need to be set according to the actual application scenario of the chip substrate 109.

[0044] Specifically, when the corrosion gas is injected into the detection cavity 105 based on the preset corrosion gas concentration curve, the control module 115 will adjust the atomization amount of the ultrasonic humidifier 301 according to the concentration requirement of the current stage of the corrosion gas concentration curve. If the concentration of the current stage of the curve needs to be increased, the ultrasonic humidifier 301 increases the atomization amount to generate more corrosion gas. The gas enters the heating cavity 107 through the pipeline and the joint 302, and then enters the detection cavity 105 through the connected gas outlet hole 122. In this process, the gas sensor 134 in the detection cavity 105 continuously monitors the concentration of the corrosion gas in the cavity, collects real-time corrosion gas concentration data every 1 minute, and transmits the data to the control module 115. If the real-time concentration is lower than the preset value of the curve, the control module 115 further increases the atomization amount of the ultrasonic humidifier 301. If the real-time concentration is higher than the preset value, the atomization amount is reduced or the atomization is suspended, so that the concentration of the corrosion gas in the detection cavity 105 always fits the preset curve. When the heating module 303 is activated to heat the corrosion gas in the heating cavity 107 based on the preset temperature curve, the control module 115 adjusts the output power of the heating module 303 according to the temperature requirement of the current stage of the temperature curve. If the temperature curve needs to be heated, the heating module 303 increases the power to quickly heat the corrosion gas entering the heating cavity 107. The heated gas carries heat into the detection cavity 105 through the gas outlet hole 122, so that the temperature in the detection cavity 105 gradually rises. The temperature sensor 135 in the detection cavity 105 captures the real-time temperature of the cavity environment every 30 seconds, and feeds back the real-time temperature data to the control module 115. If the real-time temperature does not reach the preset value of the curve, the control module 115 increases the power of the heating module 303. If the temperature exceeds the preset value, the power is reduced, so that the temperature in the detection cavity 105 stably follows the preset curve. When the real-time corrosion gas concentration data and the real-time environmental temperature are integrated into the detection environment parameter log, the control module 115 adds the corresponding time stamp for each set of collected real-time concentration data and temperature data, and records the operation node and adjustment amplitude of each adjustment of the atomization amount of the ultrasonic humidifier 301 and the power of the heating module 303.

[0045] For example, at a certain moment, the gas sensor 134 collects a concentration of 48ppm, and the control module 115 instructs the ultrasonic humidifier 301 to increase the atomization amount by 10%. The time, real-time concentration, and adjustment instruction in this process are recorded completely. If the detection lasts for 100 hours, the log will store all the real-time concentration, real-time temperature, and equipment adjustment information within 100 hours in chronological order, forming a complete detection environment parameter log. When analyzing the performance change of the chip substrate 109 later, the log can be used to trace the environmental conditions of the substrate in a certain period of time.

[0046] S12: Based on the impedance spectrum sequence, the pad electrical performance matrix sequence, the topography point cloud sequence, and the detection environment parameter log, a degradation feature vector set is obtained, a substrate performance comprehensive evaluation report is obtained based on the degradation feature vector set, and is transmitted to a display terminal.

[0047] The substrate performance comprehensive evaluation report includes: S20: Extracting the amplitude attenuation rate of the characteristic frequency point from the impedance spectrum sequence as the material degradation index, extracting the failure ratio of the solder joint and the average resistance change rate from the electrical performance matrix sequence as the electrical degradation index, and fitting the surface curvature change from the morphology point cloud sequence as the mechanical deformation index; Specifically, when the amplitude attenuation rate of the characteristic frequency point is extracted from the impedance spectrum sequence as the material degradation index, the key frequency points commonly used by the chip substrate 109 in actual work are obtained from the database, the initial amplitude and the amplitude after detection of these characteristic frequency points at the initial stage and at the end of detection are extracted, and the amplitude attenuation rate is obtained according to the initial amplitude and the amplitude after detection. For example, the initial 1 MHz frequency point amplitude is 12V, and the amplitude of the frequency point after detection is 9.6V. After calculation by "(initial amplitude-detection amplitude) / initial amplitude*100%", the amplitude attenuation rate is 20%, reflecting the degradation degree of the conductive material inside the chip substrate 109 in the detection environment. The higher the attenuation rate, the more obvious the decrease in material conductivity.

[0048] When the failure ratio of the solder joint and the average resistance change rate are extracted from the pad electrical performance matrix sequence as the electrical degradation index, the preset solder joint failure judgment standard is obtained from the database, and the failure ratio of the number of failed pads in the matrix to the total number of pads is calculated. At the same time, the difference between the on-resistance before and after detection of all pads is calculated, and the average value of the difference is divided by the average value of the initial on-resistance to obtain the average resistance change rate. The failure ratio and the average resistance change rate respectively reflect the overall reliability of the pad connection and the overall change trend of the electrical performance.

[0049] When the surface curvature change is fitted from the morphology point cloud sequence as the mechanical deformation index, the least squares method is used to fit the surface of the chip substrate 109 top surface grid node (X, Y, Z) data, and the surface curvature values before and after detection are obtained. The difference between the two is the surface curvature change, which can quantify the mechanical deformation degree of the chip substrate 109 in the detection environment. The greater the change, the more obvious the substrate warping or depression.

[0050] S21: Based on the detection environment parameter log, the highest temperature value and the corrosion gas exposure time are extracted, the material degradation index, the electrical degradation index and the mechanical deformation index are associated with the highest temperature value and the corrosion gas exposure time, the associated stress data are obtained, and the material degradation index, the electrical degradation index, the mechanical deformation index and the associated stress data form a degradation feature vector set.

[0051] Specifically, based on the detection of environmental parameter logs, the highest temperature value and the corrosion gas exposure time are extracted. From the timestamp data of the logs, the highest temperature during the entire detection process is selected, and the total time of the chip substrate 109 from the start of contact with the corrosion gas to the end of the detection is counted. The material degradation index, electrical degradation index, and mechanical deformation index are associated with the highest temperature value and the corrosion gas exposure time one by one to form the associated stress data.

[0052] For example, under the condition of 85°C and 100 hours of corrosion exposure, the feature frequency point amplitude attenuation rate is 20%, the solder joint failure rate is 10%, the average resistance change rate is 20%, and the surface curvature change amount is 0.002 / mm. Based on these material degradation indexes, electrical degradation indexes, and mechanical deformation indexes and the associated stress data, the degradation feature vector set [20%, 10%, 20%, 0.002 / mm, 85°C, 100h] is combined in a fixed format, and the degradation feature vector set is input into the pre-trained random forest classification model.

[0053] S22: The degradation feature vector set is input into the pre-trained random forest classification model, and the random forest classification model outputs the corrosion resistance grade classification result and the confidence according to the preset grading rule. The thermal deformation index in the [0, 100] interval is obtained based on the mechanical deformation index, and the position coordinates of the failed pads on the chip substrate are marked.

[0054] Specifically, the random forest classification model needs to be trained in advance with a large amount of chip substrate detection data under different environmental stresses, and has the ability to judge the corrosion resistance according to the degradation index. The preset grading rule, for example, divides the corrosion resistance grade into 1-5 levels, with level 1 being the best and level 5 being the worst.

[0055] Among them, the feature frequency point amplitude attenuation rate ≤5%, the corrosion resistance grade is represented as level 1; the feature frequency point amplitude attenuation rate 5%-15%, the corrosion resistance grade is represented as level 2; the feature frequency point amplitude attenuation rate 15%-25%, the corrosion resistance grade is represented as level 3; the feature frequency point amplitude attenuation rate 25%-35%, the corrosion resistance grade is represented as level 4; the feature frequency point amplitude attenuation rate > 35%, the corrosion resistance grade is represented as level 5.

[0056] The random forest classification model outputs the corrosion resistance grade classification result according to the built-in rules after receiving the above set of degradation feature vectors, and the confidence is based on the mechanical deformation index to obtain the thermal deformation index in the [0, 100] interval. The preset conversion rule is that when the surface curvature change amount is 0, the thermal deformation index is 100, and when the surface curvature change amount reaches 0.004 / mm, the thermal deformation index is 0. The above 0.002 / mm surface curvature change amount corresponds to the thermal deformation index 50. The index directly reflects the ability of the chip substrate 109 to resist thermal deformation. When marking the position coordinates of the failed pads on the chip substrate 109, the row and column numbers of the failed pads in the matrix are determined from the pad electrical performance matrix sequence, and the row and column numbers are converted into the actual X and Y coordinates of the substrate according to the division rule of the substrate grid.

[0057] For example, the failure of the pad in the 8th row and 12th column of the matrix corresponds to the coordinates (12mm, 8mm) on the chip substrate 109. Based on the corrosion resistance grade 3, the thermal deformation index 50, and the position coordinates of the failed pads (12mm, 8mm) and (15mm, 20mm), a comprehensive evaluation report of the substrate performance is generated. The report also needs to include the trend chart of each degradation index and the correlation stress data control table.

[0058] S23: Based on the corrosion resistance grade, the thermal deformation index, and the position coordinates of the failed pads, a comprehensive evaluation report of the substrate performance is generated and transmitted to the display terminal.

[0059] The above-described embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent replacements for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A chip substrate performance detection device, characterized in that: include: A detection housing is provided, wherein a placement cavity and an equipment cavity are formed in the detection housing by setting a partition plate, a detection isolation cover is provided on the top of the partition plate to form the detection cavity, and a heating isolation cover is provided on the bottom of the partition plate to form the heating cavity, and the detection cavity and the heating cavity are connected; A chip fixture is installed in the detection chamber and is used to fix the chip substrate to be detected; An impedance tester, the impedance tester is electrically connected to four sets of test chip probes mounted on the chip fixture, the four sets of test chip probes are connected to electrodes on the chip substrate, and the impedance tester is used to obtain an impedance spectrum sequence; An AC / DC parameter tester is electrically connected to a probe matrix mounted on top of a detection isolation cover. The bottom of the probe matrix contacts the pads on the chip substrate. The AC / DC parameter tester is used to obtain a matrix sequence of electrical properties of the pads. The probe matrix is ​​provided with multiple sets of displacement sensors for obtaining vertical displacement feedback data. The detection ends of the multiple sets of displacement sensors are respectively directed toward the multiple sets of detection probes in the probe matrix. The control module is installed on one side of the detection housing and is used to obtain a comprehensive evaluation report on the substrate performance and transmit it to the display terminal.

2. A chip substrate performance detection device according to claim 1, characterized in that: The chip fixture includes a fixture mounting block installed on the top of the partition plate, the detection isolation cover includes a detection partition, the detection partition is provided on the periphery of the fixture mounting block, a detection shell is provided on one side of the detection partition, a pulling shell for opening and closing the detection isolation cover is provided on the side of the detection shell away from the detection partition, a detection cavity is formed between the detection partition, the detection shell and the pulling shell, a lifting frame for moving four groups of bearing and sealing columns to the bearing position in the detection cavity or the ventilation position in the heating cavity is provided at the bottom of the heating isolation cover, four groups of air outlet holes are opened on the partition plate, four groups of through holes are opened at the bottom of the heating isolation cover, and first sealing sleeves are provided in the four groups of air outlet holes and the through holes; When the lifting frame is in the carrying position, the top ends of the four groups of carrying sealing columns pass through the four groups of through holes and the air outlet holes and contact the bottom of the chip substrate, and the detection cavity and the heating cavity are not connected; When the lifting frame is located at the ventilation position, the four groups of bearing and sealing columns are respectively arranged in the four groups of through holes, and the detection cavity and the heating cavity are communicated with each other through the four groups of air outlet holes.

3. The chip substrate performance detection device according to claim 2, characterized in that: There are sliding blocks on both sides of the pulling shell, and sliding grooves are opened on the two sets of sliding blocks. The limit columns on both sides of the detection shell are respectively inserted into the two sets of sliding grooves. There are also limit strips on both sides of the detection shell. The two sets of limit strips are respectively slidably connected with the top of the two sets of sliding blocks; There are two sets of through slots on the partition plate. One side of each set of through slots is provided with a rotating seat. A linkage gear is provided on the rotating seat. A driving rack is provided at the bottom of the sliding block. The two sides of the lifting frame are connected to the two sets of lifting racks through two sets of connecting frames. One side of the linkage gear is engaged with the lifting rack, and the top is engaged with the driving rack. When the shell is pulled to the open position to open the detection isolation cover, the lifting frame moves to the bearing position; When the shell is pulled to the closed position to close the detection isolation cover, the lifting frame moves to the ventilation position.

4. The chip substrate performance detection device according to claim 2, characterized in that: An ultrasonic humidifier for outputting corrosive gas is provided in the equipment cavity. A joint communicating with the heating cavity is provided on one side of the heating isolation cover. The gas outlet of the ultrasonic humidifier is connected to the joint through a pipeline. A heating module for heating the corrosive gas in the heating cavity is provided on the periphery of the heating isolation cover. A gas sensor for detecting the concentration of corrosive gas is provided in the detection cavity. A temperature sensor is also provided in the detection cavity. An air pressure sensor is provided in the detection chamber, and two groups of reflux holes are opened on the top of the partition plate corresponding to the detection chamber. A trumpet-shaped gas gathering cover is provided on the top of the two groups of reflux holes, and a filter is provided in the trumpet-shaped gas gathering cover. An electromagnetic regulating valve is provided at the bottom of the two groups of reflux holes, and the two groups of electromagnetic regulating valves are connected to one end of the reflux pipe through a three-way pipe. A reflux check valve is provided at the reflux end of the ultrasonic humidifier, and the other end of the reflux pipe is connected to the reflux check valve. A diaphragm vacuum pump is provided on the reflux pipe, and an insulation layer is provided around the reflux pipe.

5. The chip substrate performance detection device according to claim 2, characterized in that: Two sets of sliding channels are provided on one side of the fixture mounting block, and two sets of symmetrical sliding racks are provided in the two sets of sliding channels. A limit plate is also provided on one side of the fixture mounting block corresponding to the two sets of sliding channels. A clamping block for clamping the chip substrate is provided on one side of the two sets of sliding racks. A transmission hole is provided between the two sets of sliding channels, and a clamping gear is provided at one end of the transmission hole. The top and bottom of the clamping gear are respectively engaged with the two sets of sliding racks. One end of the transmission shaft is connected to the clamping gear, and the other end is connected to the output shaft of the clamping servo motor. A second sealing sleeve is provided at the other end of the transmission hole, and the second sealing sleeve is arranged on the circumference of the transmission shaft. A mounting frame is provided on the side of the fixture mounting block away from the detection chamber, and the clamping servo motor is installed on one side of the mounting frame. Two sets of bearings are provided on the mounting frame, and the transmission shaft is passed through the two sets of bearings.

6. The chip substrate performance detection device according to claim 5, characterized in that: Two groups of sliding holes are provided on both groups of clamping blocks, and one end of the four groups of test chip probes are respectively inserted into the four groups of sliding holes, and a protective shell is provided at one end of the sliding hole. The other end of the test chip probe is inserted into the protective shell. A take-up reel is provided on both sides of the detection shell, and an anti-corrosion connecting wire is wound around the take-up reel. One end of the anti-corrosion connecting wire passes through the through hole on one side of the protective shell and is connected to the test chip probe. A connecting socket is provided on one side of the take-up reel, and the anti-corrosion connecting wire is electrically connected to the connecting socket. A third sealing sleeve is provided in the through hole, and a first spring is provided in the protective shell. One end of the first spring is in contact with the test chip probe. The winding force of the take-up reel is greater than the minimum elastic force of the first spring. An impedance tester is provided in the placement cavity, and the impedance tester is connected to the two groups of connecting sockets through a wire.

7. The chip substrate performance detection device according to claim 2, characterized in that: The probe matrix includes multiple groups of probes. Multiple groups of mounting tubes are provided in the detection isolation cover. The bottom ends of the multiple groups of detection probes are respectively inserted into the multiple groups of mounting tubes. A mounting bracket is installed on the top of the detection isolation cover. Multiple groups of grooves are provided on the bottom of the mounting bracket corresponding to the multiple groups of detection probes. Multiple groups of second springs are respectively provided between the multiple groups of grooves and the multiple groups of detection probes. The multiple groups of second springs are respectively in contact with the top ends of the multiple groups of detection probes. Multiple groups of mounting holes are provided on the top of the mounting bracket, and displacement sensors are installed in the multiple groups of mounting holes. Sensing protrusions are provided on one side of the multiple groups of detection probes, and the multiple groups of displacement sensors are respectively facing the multiple groups of sensing protrusions. A data connector is provided on the top of the mounting bracket, and pinhole sockets are provided on both sides of the data connector. The multiple groups of displacement sensors and the probe matrix are connected to the two groups of pinhole plugs and the two groups of pinhole sockets respectively through wires, and the data connector is electrically connected to the AC and DC parameter tester installed in the placement cavity.

8. A method for detecting a chip substrate performance detection device, applied to a chip substrate performance detection device according to any one of claims 1 to 7, characterized in that: include: Obtain impedance spectrum sequence based on test chip probe, obtain pad electrical performance matrix sequence based on AC / DC parameter tester, and obtain topography point cloud sequence based on displacement sensor; Perform dynamic control of the environmental chamber based on the preset corrosive gas concentration and temperature curve, and obtain the detection environment parameter log; A degradation feature vector set is obtained based on the impedance spectrum sequence, pad electrical performance matrix sequence, morphology point cloud sequence and detection environment parameter log. A comprehensive evaluation report on substrate performance is obtained based on the degradation feature vector set and transmitted to the display terminal.

9. The method for detecting chip substrate performance according to claim 8, characterized in that: Obtain impedance spectrum sequence based on test chip probe, obtain pad electrical performance matrix sequence based on AC / DC parameter tester, and obtain topography point cloud sequence based on displacement sensor, including: The impedance tester injects AC test signals into the electrodes at both ends of the chip substrate through two sets of test chip probes, synchronously measures the phase difference and amplitude response of voltage and current, and obtains the impedance spectrum sequence; Each probe in the probe matrix corresponds to a pad on the substrate. The AC / DC parameter tester sends a row selection signal to the probe matrix, selects all probes in the first row of the probe matrix, activates the probes in the current row in column order, applies a microcurrent to the pads on the chip substrate, and measures the on-resistance value and ground leakage current value between the pads. After completing the first row scan, jump to the second row and repeat the column scan until all rows are scanned, obtaining the pad electrical performance matrix sequence; Based on the displacement sensor, the Z-axis displacement of each probe in the probe matrix is ​​obtained in real time. The substrate grid is generated based on the top surface of the chip substrate. The X and Y coordinates of each probe are mapped to the substrate grid to obtain multiple substrate grid nodes. A height value is assigned to each substrate grid node based on the initial Z-axis coordinate and Z-axis displacement value of the probe. Each substrate grid node is stored as a topographic point cloud sequence in the (X, Y, Z) format.

10. The method for detecting chip substrate performance according to claim 8, wherein: Obtain a degradation feature vector set based on the impedance spectrum sequence, pad electrical performance matrix sequence, topography point cloud sequence, and detection environment parameter log. Obtain a comprehensive evaluation report on substrate performance based on the degradation feature vector set and transmit it to the display terminal, including: The characteristic frequency amplitude attenuation rate is extracted from the impedance spectrum sequence as a material degradation index. The solder joint failure ratio and average resistance change rate are extracted from the electrical performance matrix sequence as electrical degradation indicators. The surface curvature change is fitted from the topography point cloud sequence as a mechanical deformation index. Extract the maximum temperature value and the duration of exposure to corrosive gas based on the detection environment parameter log, associate the material degradation index, electrical degradation index, and mechanical deformation index with the maximum temperature value and the duration of exposure to corrosive gas, obtain associated stress data, and construct a degradation feature vector set based on the material degradation index, electrical degradation index, mechanical deformation index, and associated stress data; The degradation feature vector set is input into a pre-trained random forest classification model. The random forest classification model outputs the corrosion resistance classification result and confidence level according to the preset classification rules. The thermal deformation resistance index in the range of [0, 100] is obtained based on the mechanical deformation index, and the location coordinates of the failed pads on the chip substrate are marked. A comprehensive evaluation report on substrate performance is generated based on the corrosion resistance level, thermal deformation resistance index and position coordinates of the failed pad and transmitted to the display terminal.

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