Method for determining breakdown voltage prediction model of capacitor device

Abstract

The embodiment of the invention provides a method for determining a breakdown voltage prediction model of a capacitor device, and the method comprises the steps: carrying out the modeling of the capacitor device according to the size information and technological process of the capacitor device, and determining a simulation model of the capacitor device; performing test design on the simulation model according to influence factors in the manufacturing process of the capacitor, acquiring field intensity distribution of the simulation model by applying a voltage signal to the simulation model in each test design scene, comparing the field intensity distribution with breakdown field intensity, and determining a predicted breakdown voltage value; and applying a voltage signal to the capacitor device to determine an actual breakdown voltage value, and adjusting the influence factors according to a comparison result of the predicted breakdown voltage value and the actual breakdown voltage value to obtain a breakdown voltage prediction model of the capacitor device. According to the embodiment of the invention, the problem that the breakdown voltage of the capacitor cannot be effectively predicted in the prior art is solved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of integrated circuits, and in particular, to a method for determining a breakdown voltage prediction model for a capacitor device. Background Art

[0002] In related technologies, technicians use the Process Design Kit (PDK) provided by the foundry for circuit design. When using devices within the foundry's specifications, there's no need to specifically consider the breakdown reliability of capacitor components. However, when customizing non-standard capacitor components to meet specific circuit requirements, if the customized parameters exceed the foundry specification, resulting in an increased risk of failure, there's no way to effectively guarantee that the capacitor components will meet reliability requirements.

[0003] During the integrated circuit (IC) manufacturing process, the structural dimensions of devices such as capacitors may differ from the ideal layout due to factors such as process flow, material parameters, stress engineering, and optical proximity correction (OPC) effects. Under extreme design conditions, this can further deteriorate local reliability, necessitating further reliability assessment.

[0004] Foundries are the sole source of solutions for capacitor reliability risk assessments. However, to ensure process reliability and protect technical secrets, foundries are less cooperative with custom components and are reluctant to disclose process information. To enhance assessment autonomy and avoid operational limitations, it is crucial to improve in-house capacitor customization and failure analysis capabilities.

[0005] Related art methods for analyzing capacitor reliability primarily rely on applying pressure across the capacitor plates to determine the capacitor's breakdown risk based on hot spots. Beyond this, there are no simulation or testing methods for capacitor breakdown reliability. Summary of the Invention

[0006] The embodiments of the present application provide a method for determining a breakdown voltage prediction model of a capacitor device, so as to at least solve the problem in the related art that the breakdown voltage of the capacitor device cannot be effectively predicted.

[0007] According to one embodiment of the present application, a method for determining a breakdown voltage prediction model of a capacitor device is provided, comprising: modeling the capacitor device according to size information and a process of the capacitor device to determine a simulation model of the capacitor device; performing design of experiments on the simulation model according to influencing factors in a manufacturing process of the capacitor device, obtaining a field intensity distribution of the simulation model by applying a voltage signal to the simulation model under each design of experiment, comparing the field intensity distribution with a breakdown field intensity to determine a predicted breakdown voltage value; determining an actual breakdown voltage value by applying a voltage signal to the capacitor device, and adjusting the influencing factors according to a comparison result of the predicted breakdown voltage value and the actual breakdown voltage value to obtain the breakdown voltage prediction model of the capacitor device.

[0008] According to still another embodiment of the present application, a computer readable storage medium is also provided, and the computer readable storage medium stores a computer program, wherein the computer program is configured to execute the steps in the above method embodiments when running.

[0009] According to still another embodiment of the present application, an electronic device is also provided, comprising a memory and a processor, wherein the memory stores a computer program, and the processor is configured to execute the computer program to perform the steps in the above method embodiments.

[0010] According to still another embodiment of the present application, a computer program product is also provided, comprising a computer program and instructions, wherein the computer program and the instructions are executed by a processor to implement the steps in the above method embodiments.

[0011] The embodiment of the application includes simulation and actual measurement two stages in determining the breakdown voltage prediction model of the capacitor device. In the simulation stage, modeling of the capacitor device is firstly performed. The modeling is based on size information and process of the capacitor device. Since the size information of the capacitor device can be changed according to actual requirements, the simulation model of the capacitor device can be customized. Based on the simulation model of the capacitor device, the influencing factors of the capacitor device in the actual manufacturing process can be simulated to perform test design of the capacitor device, including multiple test design scenarios. In each test design scenario, a voltage signal is applied to the simulation model, so that the field intensity distribution of the simulation model under different voltages is obtained. The obtained field intensity distribution is compared with the preset breakdown field intensity, and the prediction breakdown voltage value can be determined. After the simulation stage, the actual generated capacitor device is applied with the voltage signal consistent with the simulation stage, so that the actual breakdown voltage value is determined. There may be a certain difference between the prediction breakdown voltage value and the actual breakdown voltage value, which indicates that the manufacturing process of the capacitor device cannot be well restored. Therefore, after comparison, the influencing factors are adjusted according to the comparison result, so as to obtain a more accurate breakdown voltage prediction model of the capacitor device. The model includes all the designs and parameters involved in the simulation and actual measurement stages. Therefore, the problem that the breakdown voltage of the capacitor device cannot be effectively predicted in the related art can be solved, and the effect that a model capable of effectively predicting the breakdown voltage of the capacitor device is determined through simulation and actual test can be achieved. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 FIG. 1 is a hardware structure block diagram of a computer terminal for determining a breakdown voltage prediction model of a capacitor device according to an embodiment of the application;

[0013] Figure 2 FIG. 2 is a flowchart of a method for determining a breakdown voltage prediction model of a capacitor device according to an embodiment of the application;

[0014] Figure 3 FIG. 3 is a modeling schematic diagram of capacitor device modeling and test design error analysis according to an embodiment of the application;

[0015] Figure 4 FIG. 4 is a connection schematic diagram of capacitor device simulation test and actual test circuit according to an embodiment of the application;

[0016] Figure 5 FIG. 5 is a current-voltage change curve diagram according to an embodiment of the application;

[0017] Figure 6 FIG. 6 is a structure block diagram of a determination device for a breakdown voltage prediction model of a capacitor device according to an embodiment of the application;

[0018] Figure 7This is a flowchart of a method for determining a breakdown voltage prediction model of a capacitive device according to yet another embodiment of the present application. DETAILED DESCRIPTION

[0019] The embodiments of the present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0020] It should be noted that the terms "first", "second", etc. in the description and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0021] The method embodiments provided in the embodiments of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device. Taking running on a computer terminal as an example, Figure 1 FIG. 1 is a hardware structure block diagram of a computer terminal for determining a breakdown voltage prediction model of a capacitor device according to an embodiment of the present application. Figure 1 As shown, the computer terminal may include one or more ( Figure 1 Only one is shown) a processor 102 (the processor 102 may include but is not limited to a microprocessor MCU or a programmable logic device FPGA and other processing devices) and a memory 104 for storing data. The computer terminal may also include a transmission device 106 and an input / output device 108 for communication functions. It will be understood by those skilled in the art that Figure 1 The structure shown is only for illustration and does not limit the structure of the above-mentioned computer terminal. For example, the computer terminal may also include Figure 1 More or fewer components than shown, or with Figure 1 Different configurations shown.

[0022] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the method for determining the breakdown voltage prediction model of the capacitor device in the embodiment of the present application. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, implementing the above method. The memory 104 may include a high-speed random access memory and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some instances, the memory 104 may further include a memory remotely located relative to the processor 102, and these remote memories may be connected to the computer terminal via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0023] The transmission device 106 is used to receive or transmit data via a network. A specific example of the aforementioned network may include a wireless network provided by a communications provider of a computer terminal. In one embodiment, the transmission device 106 includes a network interface controller (NIC), which can be connected to other network devices via a base station to enable communication with the Internet. In another embodiment, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0024] In this embodiment, a method for determining a breakdown voltage prediction model of a capacitor device running on the above-mentioned computer terminal is provided. Figure 2 is a flow chart of a method for determining a breakdown voltage prediction model of a capacitor device according to an embodiment of the present application, such as Figure 2 As shown, the process includes the following steps:

[0025] Step S202 : Modeling the capacitor device according to the size information and process of the capacitor device to determine a simulation model of the capacitor device.

[0026] In an exemplary embodiment, a capacitor device is modeled based on its size information and process, including: determining a capacitance value of the capacitor device based on a circuit design, and designing a capacitor layout of the capacitor device based on the capacitance value; determining size information of the capacitor device based on the capacitor layout, and modeling the capacitor device based on the size information and process using simulation software.

[0027] In one embodiment, when a non-standard capacitor device is customized to meet the needs of a special circuit, if the customized parameters exceed the Foundry Spec range, the risk of failure may increase. Therefore, in order to meet the reliability requirements of the non-standard capacitor device, the breakdown voltage of the non-standard capacitor device needs to be predicted.

[0028] It should be noted that the method for determining the breakdown voltage prediction model of the capacitor device in the embodiment of the present application can be applied not only to customized non-standard capacitor devices, but also to situations where standard capacitor devices are used beyond the standard usage range. The embodiment of the present application does not limit this.

[0029] In one embodiment, the modeling process mainly includes process simulation and device simulation. According to the size information and process of the capacitor device, the process and device structure used are simulated by the simulation software Electronic Design Automation (Technology Computer Aided Design, TCAD), and a simulation model of the capacitor device close to the actual layout is obtained, which is equivalent to the capacitor device simulation model generated under ideal manufacturing conditions. The process of the capacitor device refers to the manufacturing process of the capacitor device, including the selection of materials, processing technology, etc. This process involves the preparation of materials, the production of electrodes, the filling of dielectrics and other links, and the process parameters of each link need to be strictly controlled to ensure the stable performance and reliability of the capacitor.

[0030] Step S204: Experimentally design the simulation model based on the influencing factors in the manufacturing process of the capacitor device. In each experimental design scenario, a voltage signal is applied to the simulation model to obtain the field strength distribution of the simulation model. The field strength distribution is compared with the breakdown field strength to determine the predicted breakdown voltage value.

[0031] In one embodiment, after determining the capacitor device simulation model generated under ideal manufacturing conditions, different experimental designs are performed for the simulation model by simulating the influencing factors that may occur in the actual manufacturing process. A voltage signal is applied to the simulation model in each experimental design scenario to provide data support and improvement direction for the subsequent analysis of breakdown voltage fluctuations, thereby obtaining a more reasonable range for the correction of the breakdown voltage.

[0032] Different voltage signals are applied to the simulation model to obtain the field strength distribution of the simulation model, and the field strength distribution is compared with the breakdown field strength, where the breakdown field strength is the breakdown field strength of the capacitor device under ideal conditions obtained through theoretical calculation.

[0033] In one exemplary embodiment, the influencing factors include the process of the capacitor device, material parameters, stress engineering, and optical proximity correction (OPC) effects.

[0034] It should be noted that stress engineering for capacitor devices refers to the analysis and design of the stresses experienced by capacitors during operation, ensuring they can withstand stress and maintain stable performance under normal operating conditions. Optical Proximity Correction (OPC) is a technology that corrects photolithographic patterns to improve pattern accuracy and image quality. By optimizing and correcting photolithographic patterns, pattern deformation and dimensional deviations caused by the optical proximity effect can be reduced, thereby improving chip manufacturing quality and performance.

[0035] In an exemplary embodiment, a simulation model is experimentally designed based on influencing factors in the manufacturing process of the capacitor device, including: designing different error scenarios for the simulation model based on the influencing factors in the manufacturing process of the capacitor device, wherein the error scenarios include physical size error, material parameter error and OPC effect error.

[0036] In one embodiment, Figure 3 The diagram below shows the modeling and error analysis of capacitor devices and experimental design. The simulation model's error scenarios include physical scenario errors, material parameter errors, and OPC effect errors. Electrodes 1 and 2 are labeled in the ideal device diagram to set different voltage signals for electrodes 1 and 2 during the simulation process to obtain information about the field intensity distribution within the dielectric.

[0037] In an exemplary embodiment, the field strength distribution is compared with the breakdown field strength to determine the predicted breakdown voltage value, including: determining the maximum field strength value based on the field strength distribution, and when the maximum field strength value is greater than the breakdown field strength, the electrode voltage corresponding to the maximum field strength value is the predicted breakdown voltage value.

[0038] Step S206 , determining the actual breakdown voltage value by applying a voltage signal to the capacitor device, and adjusting the influencing factors according to the comparison result between the predicted breakdown voltage value and the actual breakdown voltage value to obtain a breakdown voltage prediction model for the capacitor device.

[0039] In an exemplary embodiment, the actual breakdown voltage value is determined by applying different voltage signals to the capacitor device, including: applying different voltage signals to two electrodes of the capacitor device through a probe and recording the corresponding current values ​​of the probe; drawing a current-voltage change curve according to the voltage value and current value of the voltage signal, and determining the actual breakdown voltage value according to the current-voltage change curve.

[0040] In one embodiment, the chip is unsealed and the Nanoprobe is operated to locate the position of the capacitor device to be tested. In addition, a suitable test position is selected to facilitate the implantation of the probe. Figure 4 The diagram of the capacitor device simulation test and actual test circuit connection shown in the figure simulates the specific performance of customized voltage in different working scenarios by applying different voltage signals to the two electrodes of the capacitor device (Metal I to Metal N) through the probe and recording the corresponding current values. As the voltage changes, the probe current also changes. At this time, the current and voltage change curves are recorded during the voltage change process. Figure 5 It is a current and voltage change curve.

[0041] In an exemplary embodiment, determining the actual breakdown voltage value according to the current-voltage variation curve graph includes: when a current value in the current-voltage variation curve graph suddenly changes, the corresponding voltage value is the actual breakdown voltage value.

[0042] In one embodiment, Figure 5 As shown in the figure, when the current Current suddenly changes and the corresponding Voltage = 17V, it is considered that the capacitor device has breakdown, and the voltage at this time is Figure 4 The actual breakdown voltage value of the entire capacitor Metal I to Metal N is shown.

[0043] In an exemplary embodiment, the voltage signal includes a steady-state voltage, a transient voltage, or an alternating voltage.

[0044] In one embodiment, in order to simulate the actual use scenario of the capacitor device as closely as possible and obtain a more accurate predicted breakdown voltage value and actual breakdown voltage value of the capacitor device, different voltage signals are set for the capacitor device, including steady-state voltage, transient voltage, or alternating voltage. Steady-state voltage refers to the voltage in a stable state and is the basic voltage during normal operation of the power system; transient voltage refers to the instantaneous voltage fluctuation caused by sudden events (such as lightning strikes, switch operations, etc.) in the power system; alternating voltage refers to the voltage generated by the AC power supply in the power system and is a common voltage form in the power system.

[0045] It should be noted that the method for determining the breakdown voltage prediction model of the capacitor device includes a simulation step and an actual test step, steps S202 to S204 correspond to the simulation step, and step S206 corresponds to the actual test step.

[0046] The breakdown voltage prediction model of the capacitor device determined by the embodiment of the present application includes modeling the capacitor device to determine the design and related parameters of the simulation model of the capacitor device, experimental design of the simulation model and scenario setting and determination of influencing factors when predicting the breakdown voltage.

[0047] Through the description of the above implementation methods, those skilled in the art can clearly understand that the method according to the above embodiment can be implemented by means of software plus the necessary general hardware platform, and of course it can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes a number of instructions for enabling a terminal device (which can be a mobile phone, computer, server, or network device, etc.) to execute the methods described in each embodiment of the present application.

[0048] There is also provided in the embodiment a device for determining a breakdown voltage prediction model of a capacitor device, which is used to implement the above-mentioned embodiments and preferred embodiments, and will not be described again. As used below, the term "module" can be a combination of software and / or hardware that implements a predetermined function. Although the device described in the following embodiments is preferably implemented in software, implementation in hardware, or a combination of software and hardware, is also possible and contemplated.

[0049] Figure 6 is a structural block diagram of a device for determining a breakdown voltage prediction model of a capacitor device according to an embodiment of the present application, as shown in Figure 6 The device includes a modeling module 10, a determining module 20 and an obtaining module 30.

[0050] The modeling module 10 is configured to model the capacitor device according to size information and a process of the capacitor device, and determine a simulation model of the capacitor device.

[0051] The determining module 20 is configured to perform design of experiments on the simulation model according to influencing factors in the manufacturing process of the capacitor device, obtain a field intensity distribution of the simulation model by applying a voltage signal to the simulation model under each design of experiments scenario, compare the field intensity distribution with a breakdown field intensity, and determine a predicted breakdown voltage value.

[0052] The obtaining module 30 is configured to determine an actual breakdown voltage value by applying a voltage signal to the capacitor device, and adjust the influencing factors according to a comparison result of the predicted breakdown voltage value and the actual breakdown voltage value, so as to obtain a breakdown voltage prediction model of the capacitor device.

[0053] It should be noted that each of the above modules can be implemented by software or hardware, and for the latter, the implementation can be achieved by the following ways, but is not limited thereto: all the above modules are located in the same processor; or the above modules are located in different processors in any combination.

[0054] For the convenience of understanding the technical solutions provided by the present application, the following will be described in detail in combination with specific scene embodiments.

[0055] Figure 7 is a flow chart of a method for determining a breakdown voltage prediction model of a capacitor device according to another embodiment of the present application, as shown in Figure 7 The method includes the following steps:

[0056] Step S701, capacitor device structure modeling.

[0057] Specifically, based on the given capacitor device capacitance layout, size and process, TCAD software is used to model the capacitor device under ideal size, and a simulation model of the capacitor device is determined.

[0058] Step S702 : performing experimental design considering the influence of influencing factors on the structure of the simulation model.

[0059] Specifically, the influencing factors include the process, material parameters, stress engineering and optical proximity correction (OPC) effect of the capacitor device.

[0060] Step S703 , performing simulations on the simulation model under different conditions to obtain predicted breakdown voltage values.

[0061] Step S704 , performing actual production of the capacitor device.

[0062] Specifically, the actual production and manufacturing of the capacitor device is performed based on the same capacitor layout and size of the capacitor device as in step S701 .

[0063] Step S705 , unsealing the manufactured capacitor and applying pressure to both ends of the plates.

[0064] Step S706 , plotting current-voltage curves under different conditions, and capturing voltage values ​​when the current suddenly changes.

[0065] Specifically, when a sudden change in current occurs during the pressurization process, the pressurization is stopped, and the voltage value at the time of the sudden change in current is captured as the actual breakdown voltage value.

[0066] Step S707 , determining whether the predicted breakdown voltage value is consistent with the actual breakdown voltage value.

[0067] Specifically, it is determined whether the predicted breakdown voltage value obtained in step S703 is consistent with the actual breakdown voltage obtained in step S706 . If they are consistent, the process proceeds to step S708 ; otherwise, the process proceeds to step S709 .

[0068] Step S708 , summarizing the capacitor modeling and reliability analysis methods under specific process nodes.

[0069] Specifically, the predicted breakdown voltage value is consistent with the actual breakdown voltage value, indicating that the simulation can well restore the actual manufacturing process of the capacitor device. The method for determining the breakdown voltage prediction model of the capacitor device under this process node is summarized, and this method is applied to the subsequent customization of similar capacitor devices to achieve quantitative analysis, thereby achieving reliability control.

[0070] Step S709: Adjust the parameters of the influencing factors.

[0071] Specifically, the predicted breakdown voltage value is inconsistent with the actual breakdown voltage value, indicating that the current simulation process cannot well restore the actual manufacturing process of the capacitor device. It is necessary to adjust the parameters of the influencing factors of the capacitor device and then continue to conduct experimental design on the simulation model of the capacitor device.

[0072] An embodiment of the present application further provides a computer-readable storage medium, in which a computer program is stored. The computer program is configured to execute the steps of any of the above method embodiments when run.

[0073] In an exemplary embodiment, the computer-readable storage medium may include, but is not limited to, various media that can store computer programs, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk, or an optical disk.

[0074] An embodiment of the present application further provides an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0075] In an exemplary embodiment, the electronic device may further include a transmission device and an input / output device, wherein the transmission device is connected to the processor, and the input / output device is connected to the processor.

[0076] For specific examples in this embodiment, reference may be made to the examples described in the above embodiments and exemplary implementation modes, and this embodiment will not be described in detail here.

[0077] The embodiments of the present application can effectively solve the problem of reliability risk control in customized capacitor devices and special applications; for simulation modeling, by performing physical modeling and finite element simulation on the underlying devices of the integrated circuit, the anti-breakdown characteristics of non-standard capacitor devices under different application conditions are predicted, which has the characteristics of high efficiency and wide range; for actual measurement and calibration, the produced capacitor devices are actually tested by unsealing and Nanoprobe to obtain accurate process limits, so as to confirm whether there is a breakdown risk; the anti-breakdown characteristics of non-standard capacitor devices are summarized and corrected through simulation results and measured data, and finally the breakdown risk estimation of customized non-standard capacitors and the subsequent reliable application needs are realized, while ensuring the accuracy of the results, greatly reducing costs and time.

[0078] Obviously, those skilled in the art should understand that the modules or steps of the present application described above can be implemented using a general-purpose computing device, they can be concentrated on a single computing device, or distributed across a network composed of multiple computing devices, they can be implemented using program code executable by the computing device, and thus, they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be performed in a different order than herein, or they can be fabricated into separate integrated circuit modules, or multiple modules or steps can be fabricated into a single integrated circuit module for implementation. Thus, the present application is not limited to any specific combination of hardware and software.

[0079] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. made within the principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A method for determining a breakdown voltage prediction model for a capacitor device, characterized in that: include: Modeling the capacitor device according to the size information and process of the capacitor device to determine a simulation model of the capacitor device; Conducting an experiment design on the simulation model based on influencing factors in the manufacturing process of the capacitive device, obtaining a field intensity distribution of the simulation model by applying a voltage signal to the simulation model in each experiment design scenario, comparing the field intensity distribution with a breakdown field intensity, and determining a predicted breakdown voltage value; The actual breakdown voltage value is determined by applying the voltage signal to the capacitor device, and the influencing factors are adjusted according to a comparison result between the predicted breakdown voltage value and the actual breakdown voltage value to obtain a breakdown voltage prediction model for the capacitor device.

2. The method according to claim 1, characterized in that The modeling of the capacitor device according to the size information and process of the capacitor device includes: Determining a capacitance value of the capacitor device according to a circuit design, and designing a capacitance layout of the capacitor device according to the capacitance value; The size information of the capacitor device is determined according to the capacitor layout, and the capacitor device is modeled according to the size information and the process using simulation software.

3. The method according to claim 1, characterized in that The influencing factors include the process, material parameters, stress engineering and optical proximity correction (OPC) effect of the capacitor device.

4. The method according to claim 1, wherein The experimental design of the simulation model according to the influencing factors in the manufacturing process of the capacitor device includes: Different error scenarios are designed for the simulation model according to the influencing factors in the manufacturing process of the capacitive device, wherein the error scenarios include physical size error, material parameter error and OPC effect error.

5. The method according to claim 1, wherein Comparing the field intensity distribution with the breakdown field intensity to determine a predicted breakdown voltage value includes: A maximum field intensity value is determined according to the field intensity distribution. When the maximum field intensity value is greater than the breakdown field intensity, the electrode voltage corresponding to the maximum field intensity value is the predicted breakdown voltage value.

6. The method according to claim 1, characterized in that Determining the actual breakdown voltage value by applying different types of voltage signals to the capacitive device includes: Applying different types of voltage signals to the two electrodes of the capacitor device through a probe and recording the corresponding current values ​​of the probe; A current-voltage variation curve diagram is drawn according to the voltage value of the voltage signal and the current value, and the actual breakdown voltage value is determined according to the current-voltage variation curve diagram.

7. The method according to claim 6, characterized in that The determining the actual breakdown voltage value according to the current-voltage variation curve diagram includes: When a current value suddenly changes in the current-voltage variation curve, the corresponding voltage value is an actual breakdown voltage value.

8. The method according to claim 6, characterized in that The voltage signal may be a steady-state voltage, a transient voltage, or an alternating voltage.

9. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, wherein when the computer program is executed by a processor, the steps of the method described in any one of claims 1 to 8 are implemented.

10. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 8 are implemented.

11. A computer program product comprising a computer program and instructions, characterized in that: When the computer program or instruction is executed by a processor, the steps of the method described in any one of claims 1 to 8 are implemented.

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