Wafer bearing assembly for etching and etching equipment

Abstract

The invention relates to the technical field of semiconductor manufacturing, and provides a wafer bearing assembly for etching and etching equipment, and the wafer bearing assembly for etching comprises a bearing part and a first ring body; the bearing part is used for bearing a wafer, the first ring body is sleeved with the bearing part, and the outer wall of the bearing part is attached to the inner wall of the first ring body in a conformal mode; the bearing part is provided with a first binding face, the first binding face is perpendicular to the axial direction of the first ring body and surrounds the bearing cavity to form a closed annular structure, the first ring body is provided with a second binding face, and the second binding face is perpendicular to the axial direction of the first ring body and surrounds the bearing cavity to form a closed annular structure. The first binding face is attached to the second binding face. The above-mentioned assembly can improve the phenomenon of polymer adhesion to a component below a wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a wafer carrying assembly for etching and etching equipment. Background Art

[0002] Dry etching is a thin film etching technique using plasma. On the one hand, the chemical activity of the gases in the plasma is much stronger than under normal conditions. Choosing the right gas, depending on the material being etched, allows for a faster reaction with the material, achieving the desired removal. On the other hand, an electric field can be used to guide and accelerate the plasma, giving it a certain amount of energy. When it strikes the surface of the material being etched, it knocks out atoms from the material, thereby achieving the desired etching effect through physical energy transfer.

[0003] Traditional etching processes involve etching a metal layer to create metal conductors, followed by filling with a dielectric layer. This method etches aluminum well. However, copper, which has a lower resistivity, has halides with a high boiling point, making them difficult to remove in a vaporous form, necessitating new techniques. Damascene technology involves first etching the required three-dimensional space for the metal conductors in the dielectric layer, then filling with metal to form the conductors. This technique is suitable for producing conductors made from materials with higher-boiling-point halides.

[0004] For existing dielectric layer etching equipment (such as TEL Vigus etching equipment), multiple rings for carrying wafers are provided in the etching chamber, and there are gaps between the rings so that the polymer above the wafer will pass through the gaps and adhere to the components below the wafer. At this time, the corresponding components need to be disassembled regularly for cleaning and maintenance. On the one hand, this will affect the service life of the corresponding components. On the other hand, the etching equipment needs to be frequently shut down for maintenance, which affects the production capacity of the etching equipment.

[0005] To this end, the present invention provides a wafer carrying assembly and etching equipment for etching to improve the phenomenon of the polymer adhering to the components below the wafer. Summary of the Invention

[0006] The object of the present invention is to provide a wafer carrying assembly and etching equipment for etching, so as to improve the phenomenon of the above-mentioned polymer adhering to the components below the wafer.

[0007] The present invention provides a wafer carrying assembly for etching, comprising: a carrying member and a first ring body;

[0008] The carrier is used to carry the wafer, and the carrier is sleeved inside the first ring body, and the outer wall of the carrier is conformally fitted with the inner wall of the first ring body;

[0009] The carrier has a first fitting surface, which is perpendicular to the axial direction of the first ring body and forms a closed annular structure around the carrier cavity. The first ring body has a second fitting surface, which is perpendicular to the axial direction of the first ring body and forms a closed annular structure around the carrier cavity. The first fitting surface and the second fitting surface are fitted together.

[0010] Optionally, the bearing member has a bearing cavity that passes through the axial direction of the first ring body, and the inner wall of the bearing cavity has a bearing plane. The bearing plane forms an annular closed structure around the bearing cavity, and the bearing plane is perpendicular to the axial direction of the first ring body.

[0011] Optionally, the inner wall of the bearing cavity includes a first diameter segment and a second diameter segment arranged along the axial direction of the first ring body, the inner diameter of the first diameter segment is larger than the inner diameter of the second diameter segment, and the first diameter segment and the second diameter segment are connected by the bearing plane.

[0012] Optionally, the end face of the carrier close to one end of the first diameter segment along the axial direction of the first ring body is parallel to the carrier plane, and the distance between the end face and the carrier plane along the axial direction of the first ring body is equal to the thickness of the wafer to be carried.

[0013] Optionally, the outer wall of the carrier includes a third diameter segment and a fourth diameter segment arranged along the axial direction of the first ring body, the outer diameter of the third diameter segment is smaller than the outer diameter of the fourth diameter segment, and the third diameter segment and the fourth diameter segment are connected via the first abutting surface;

[0014] The inner wall of the first ring body includes a fifth diameter segment and a sixth diameter segment arranged along the axial direction of the first ring body, the inner diameter of the fifth diameter segment is smaller than the inner diameter of the sixth diameter segment, and the fifth diameter segment and the sixth diameter segment are connected by the second abutting surface;

[0015] The third diameter segment is conformably fitted with the fifth diameter segment, and the fourth diameter segment is conformably fitted with the sixth diameter segment.

[0016] Optionally, the inner wall of the first ring body further includes a seventh diameter segment;

[0017] The inner diameter of the seventh diameter section is greater than the inner diameter of the sixth diameter section;

[0018] Along the axial direction of the first ring body, the sixth diameter segment is located between the fifth diameter segment and the seventh diameter segment. The sixth diameter segment and the seventh diameter segment are connected via a third fitting surface. The third fitting surface forms a closed annular structure around the bearing cavity.

[0019] The present invention also provides an etching device, comprising a second ring body and the above-mentioned wafer carrying assembly for etching;

[0020] The second ring body has an annular fourth fitting surface and a fifth fitting surface at one end thereof along the axial direction, and the fourth fitting surface and the fifth fitting surface have a height difference along the axial direction of the second ring body;

[0021] The fourth fitting surface is fitted with one axial end of the first ring body, and the fifth fitting surface is fitted with the third fitting surface.

[0022] Optionally, when the outer wall of the bearing member includes a third diameter section and a fourth diameter section,

[0023] The outer diameter of the fourth diameter section is greater than the inner diameter of the second ring body, and the end surface portion of the bearing component close to the fourth diameter section along its axial direction is in contact with the fifth contact surface.

[0024] Optionally, the etching equipment also includes a third ring body, which is placed in the second ring body, the outer wall of the third ring body is conformally fitted with the inner wall of the second ring body, and one end of the third ring body along its axial direction is fitted with one end of the carrier along its axial direction.

[0025] Optionally, the etching device further comprises a chuck, at least a portion of the chuck is built into the second ring body, and the chuck has an adsorption surface, and the adsorption surface is used to adsorb the wafer carried on the carrier;

[0026] When the supporting member has a supporting plane, the adsorption surface is coplanar with the supporting plane.

[0027] With this configuration, when the carrier is inserted into the first ring, the outer circumferential wall of the carrier conforms to the inner circumferential wall of the first ring, and the first and second bonding surfaces are in contact, ensuring that there is no gap between the carrier and the first ring. Therefore, polymer on top of the wafer will not pass between the carrier and the first ring and adhere to the components below the wafer. This eliminates the need for regular disassembly of the corresponding components for cleaning and maintenance, which not only helps extend the service life of the corresponding components but also reduces the need for frequent shutdown of the etching equipment for maintenance, helping to increase the etching equipment's production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 FIG1 is a schematic structural diagram of a wafer support assembly for etching according to an embodiment of the present invention;

[0029] Figure 2 is a structural schematic diagram of a carrier according to an embodiment of the present invention;

[0030] Figure 3is a schematic structural diagram of a first ring body according to an embodiment of the present invention;

[0031] Figure 4 A schematic diagram of a partial structure of an etching device according to an embodiment of the present invention;

[0032] Figure 5 Schematic diagram of the structure of the second ring body according to an embodiment of the present invention.

[0033] Among them, in the accompanying drawings:

[0034] 101 - first diameter segment; 102 - second diameter segment; 103 - third diameter segment; 104 - fourth diameter segment; 105 - fifth diameter segment; 106 - sixth diameter segment; 107 - seventh diameter segment; 108 - eighth diameter segment; 109 - ninth diameter segment;

[0035] 10-carrying member; 11-first bonding surface; 12-carrying cavity; 13-carrying plane; 14-upper end surface of the carrier; 15-lower end surface of the carrier;

[0036] 20-first ring body; 21-second fitting surface; 22-third fitting surface; 23-lower end surface of the first ring body;

[0037] 30-second ring body; 31-fourth fitting surface; 32-fifth fitting surface;

[0038] 40-third ring body;

[0039] 50-chuck; 51-adsorption surface;

[0040] 60-wafer. DETAILED DESCRIPTION

[0041] The following is a further detailed description of the wafer carrier assembly and etching apparatus for etching according to the present invention, in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the accompanying drawings are highly simplified and not to exact scale, and are intended solely to facilitate and clearly illustrate the embodiments of the present invention.

[0042] As used in the present invention, the singular forms "a", "an", and "the" include plural referents. The term "or" is generally used to include the meaning of "and / or", the term "several" is generally used to include the meaning of "at least one", and the terms "at least two" or "a plurality" are generally used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features specified as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features. In addition, as used in the present invention, "mounted", "connected", "connected", and one element "disposed" on another element should be understood broadly and generally only indicate that there is a connection, coupling, mating, or transmission relationship between the two elements, and the connection, coupling, mating, or transmission between the two elements can be direct or indirect through an intermediate element. It should not be understood to indicate or imply a spatial positional relationship between the two elements, that is, one element can be in any orientation such as inside, outside, above, below, or to the side of another element, unless the content clearly indicates otherwise. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the figures, with the upward or upper direction being toward the top of the corresponding figure and the downward or lower direction being toward the bottom of the corresponding figure.

[0043] This embodiment provides a wafer carrier assembly for etching, comprising: a carrier 10 and a first ring body 20;

[0044] The carrier 10 is used to carry the wafer 60 to perform the etching process. The carrier 10 has a carrying cavity 12 that passes through the axial direction of the first ring body 20. The carrier 10 is inserted into the first ring body 20, and the outer wall of the carrier 10 is conformally fitted with the inner wall of the first ring body 20.

[0045] The carrier 10 has a first fitting surface 11, which is perpendicular to the axial direction a of the first ring body 20 and forms a closed annular structure around the carrier cavity 12. The first ring body 20 has a second fitting surface 21, which is perpendicular to the axial direction of the first ring body 20 and forms a closed annular structure around the carrier cavity 12. The first fitting surface 11 and the second fitting surface 21 are fitted together.

[0046] Combine Figure 1 and Figure 2As shown, in this embodiment, the outer contour of the carrier 10 is a cylindrical structure, and the first ring body 20 is an annular structure as a whole. Therefore, the first bonding surface 11 and the second bonding surface 21 are annular planes.

[0047] When the carrier 10 is inserted into the first ring body 20, the outer circumferential wall of the carrier 10 conforms to the inner circumferential wall of the first ring body 20, and the first bonding surface 11 and the second bonding surface 21 are bonded to ensure that there is no gap between the carrier 10 and the first ring body 20. Therefore, the polymer on the wafer will not pass between the carrier 10 and the first ring body 20 and adhere to the components below the wafer. In this case, there is no need to regularly disassemble the corresponding components for cleaning and maintenance. On the one hand, this helps to extend the service life of the corresponding components. On the other hand, it does not require frequent shutdown of the etching equipment for maintenance, which helps to improve the production capacity of the etching equipment.

[0048] Please refer to Figure 1 and Figure 2 As shown, the inner wall of the bearing cavity 12 has a bearing plane 13 , and the bearing plane 13 forms an annular closed structure around the bearing cavity 12 . The bearing plane 13 is perpendicular to the axial direction of the first ring body 20 .

[0049] In this embodiment, the carrying cavity 12 is adapted to the existing wafer shape and is set to a circular structure, so the carrying plane 13 is set to a circular ring to support the edge of the wafer. When the wafer is carried on the carrying plane 13, a sealing effect is formed to prevent the polymer above the wafer from moving downward through the carrying cavity 12 and adhering to the components below the wafer.

[0050] like Figure 2 As shown, the inner wall of the bearing cavity 12 includes a first diameter section 101 and a second diameter section 102 arranged along the axial direction of the first ring body 20. In this embodiment, the first diameter section 101 and the second diameter section 102 are both cylindrical surfaces and are coaxially arranged.

[0051] The inner diameter of the first diameter section 101 is greater than the inner diameter of the second diameter section 102. Figure 2 The first diameter section 101 is located above the second diameter section 102 , so the bearing cavity 12 forms a stepped structure with a larger upper portion and a smaller lower portion. The first diameter section 101 and the second diameter section 102 are connected by the bearing plane 13 .

[0052] The end surface of the bearing member 10 close to one end of the first diameter section 101 along the axial direction a of the first ring body 20 ( Figure 2 The upper end surface 14 of the middle bearing member 10 is parallel to the bearing plane 13, and the end surface ( Figure 2The distance between the upper end face 14 of the middle carrier 10 and the carrying plane 13 along the axial direction a of the first ring body 20 is equal to the thickness of the wafer 60 to be carried. That is, when the wafer 60 is carried on the carrying plane 13, the upper surface of the wafer 60 is flush with the upper end face 14 of the carrier 10. The outer diameter of the wafer 60 should be the same as the inner diameter of the first diameter section 101, so there is no gap between the wafer 60 and the first diameter section 101. At this time, the upper surface of the wafer 60 and the upper end face 14 of the carrier 10 form a large plane, which helps to improve the magnetic field distribution during the etching process, so that the ionized electron edge remains vertically in contact with the wafer, thereby improving the etching effect. In addition, the first diameter section 101 of the carrier 10 is conformally matched with the outer peripheral surface of the wafer 60, and is also used to fix the wafer 60 in an appropriate position to maintain the plasma density, and this matching method also forms a sealing effect, which helps to prevent the outer peripheral surface of the wafer 60 and the lower surface of the wafer 60 from being contaminated.

[0053] In this embodiment, the cavity 12 has a stepped shaft-like structure, with both the first diameter section 101 and the second diameter section 102 being cylindrical. This structure can adapt to the shape of existing wafers. In other alternative embodiments, the internal shape of the cavity 12 can be adjusted based on the shape of the wafer to be loaded. For example, the first diameter section 101 and the second diameter section 102 can be configured as an elliptical cylindrical ring or other shapes.

[0054] Furthermore, the outer wall of the carrier 10 includes a third diameter segment 103 and a fourth diameter segment 104 arranged along the axial direction a of the first ring body 20. The outer diameter of the third diameter segment 103 is smaller than the outer diameter of the fourth diameter segment 104. The third diameter segment 103 and the fourth diameter segment 104 are connected via the first abutting surface 11.

[0055] like Figure 2 As shown, in this embodiment, the third diameter section 103 is located above the fourth diameter section 104, and the third diameter section 103 and the fourth diameter section 104 are both cylindrical surfaces. The third diameter section 103 and the fourth diameter section 104 are coaxially arranged, so the outer wall of the carrier 10 is a stepped shaft structure with a smaller upper part and a larger lower part.

[0056] Please refer to Figure 1 and Figure 3 As shown, the inner wall of the first ring body 20 includes a fifth diameter segment 105 and a sixth diameter segment 106 arranged along the axial direction a of the first ring body 20, the inner diameter of the fifth diameter segment 105 is smaller than the inner diameter of the sixth diameter segment 106, and the fifth diameter segment 105 and the sixth diameter segment 106 are connected by the second fitting surface 21.

[0057] like Figure 3As shown, in this embodiment, the fifth diameter section 105 is located above the sixth diameter section 106. The fifth diameter section 105 and the sixth diameter section 106 are both cylindrical surfaces. The fifth diameter section 105 and the sixth diameter section 106 are coaxially arranged, so the inner circumference formed by the fifth diameter section 105 and the sixth diameter section 106 has a stepped structure with a smaller upper portion and a larger lower portion.

[0058] The outer diameter of the third diameter section 103 is the same as the inner diameter of the fifth diameter section 105 , and the two are conformally fitted. The outer diameter of the fourth diameter section 104 is the same as the inner diameter of the sixth diameter section 106 , and the two are conformally fitted.

[0059] The above arrangement forms a three-way seal between the carrier 10 and the first ring body 20: the fit between the third and fifth diameter segments 103 and 105, the fit between the first and second bonding surfaces 11 and 21, and the fit between the fourth and sixth diameter segments 104 and 106. Furthermore, the bonding surface between the outer wall of the carrier 10 and the inner wall of the first ring body 20 forms a curved structure. Even if a local gap exists between the outer wall of the carrier 10 and the inner wall of the first ring body 20 due to manufacturing errors, this curved bonding structure prevents polymer on top of the wafer from passing between the carrier 10 and the first ring body 20 and underneath the wafer.

[0060] In this embodiment, the third diameter segment 103, the fourth diameter segment 104, the fifth diameter segment 105, and the sixth diameter segment 106 are all cylindrical surfaces. In other alternative embodiments, the third diameter segment 103, the fourth diameter segment 104, the fifth diameter segment 105, and the sixth diameter segment 106 can be configured as elliptical cylinders, polygonal surfaces, or other structures.

[0061] Furthermore, the inner wall of the first ring body 20 further includes a seventh diameter section 107;

[0062] The inner diameter of the seventh diameter section 107 is greater than the inner diameter of the sixth diameter section 106;

[0063] Along the axial direction of the first ring body 20 , the sixth diameter segment 106 is located between the fifth diameter segment 105 and the seventh diameter segment 107 . The sixth diameter segment 106 and the seventh diameter segment 107 are connected via a third fitting surface 22 . The third fitting surface 22 forms a closed annular structure around the bearing cavity 12 .

[0064] Combine Figure 3 As shown, the seventh diameter section 107 is a cylindrical surface, and the seventh diameter section 107 is coaxially arranged with the sixth diameter section 106. Therefore, the third contact surface 22 between the two is a circular plane structure.

[0065] The third bonding surface 22 is configured to cooperate with other components of the etching equipment, which will be further described below in conjunction with the etching equipment.

[0066] In this embodiment, an etching device is further provided, including a second ring body 30 and the above-mentioned wafer supporting assembly for etching.

[0067] Combine Figure 4 and Figure 5 As shown, the second ring body 30 has an annular fourth fitting surface 31 and a fifth fitting surface 32 along one axial end thereof. The fourth fitting surface 31 and the fifth fitting surface 32 are coaxially arranged, and the inner diameter of the fourth fitting surface 31 and the outer diameter of the fifth fitting surface 32 are the same.

[0068] In addition, the outer wall of the second ring body 30 has an eighth diameter segment 108 and a ninth diameter segment 109 , wherein the outer diameter of the eighth diameter segment 108 is smaller than the outer diameter of the ninth diameter segment 109 , and the eighth diameter segment 108 and the ninth diameter segment 109 are arranged along the axial direction of the second ring body 30 .

[0069] Combine Figure 5 As shown, the eighth diameter segment 108 is located above the ninth diameter segment 109. This structure results in the overall outer contour of the second ring body 30 being a stepped shaft structure with a smaller top and a larger bottom. The fourth abutting surface 31 and the fifth abutting surface 32 are connected via the eighth diameter segment 108, and the eighth diameter segment 108 and the ninth diameter segment 109 are connected via the fourth abutting surface 31.

[0070] The fourth fitting surface 31 and the fifth fitting surface 32 have a height difference along the axial direction of the second ring body 30 , and the fourth fitting surface 31 and the fifth fitting surface 32 are perpendicular to the axial direction of the second ring body 30 .

[0071] When the second ring body 30 is matched with the wafer carrier assembly for etching, the second ring body 30 and the carrier 10 are coaxial.

[0072] like Figure 4 and Figure 5 As shown, the upper end portion of the second ring body 30 is matched with the lower end portion of the wafer supporting assembly for etching. Figure 4 The lower end surface 23 of the first ring body 20 is in contact with the fifth contact surface 32, and the third contact surface 22 is in contact with the fifth contact surface 32.

[0073] The inner diameter of the lower end surface 23 of the first ring body 20 is the same as the inner diameter of the fourth contact surface 31, that is, the outer diameter of the eighth diameter section 108 is the same as the inner diameter of the seventh diameter section 107. In addition, the outer diameter of the lower end surface 23 of the first ring body 20 is the same as the outer diameter of the fourth contact surface 31.

[0074] In addition, the outer diameter of the fourth diameter section 104 is larger than the inner diameter of the second ring body 30, and the end surface of the bearing member 10 close to the fourth diameter section 104 along its axial direction ( Figure 4 The lower end surface 15 of the carrier 10 is partially attached to the fifth bonding surface 32.

[0075] The above structure enables the lower end surface 15 of the carrier 10 to cover and be located directly above the inner wall of the second ring body 30 , thereby acting as a barrier to prevent the polymer above the wafer from adhering to the inner wall of the second ring body 30 .

[0076] Combine Figure 4 As shown, the etching device further includes a third ring body 40, which is, for example, an aluminum ring, which can have a heat conducting effect. The third ring body 40 is built into the second ring body 30, and the outer wall of the third ring body 40 conforms to the inner wall of the second ring body 30. The third ring body 40 is axially connected to one end ( Figure 4 The upper end of the third ring body 40 is attached to one end of the bearing member 10 along its axial direction ( Figure 4 The lower end surface 15 of the carrier 10).

[0077] Specifically, a portion of the lower end surface 15 of the carrier 10 is adhered to the upper end surface of the third ring body 40, and a portion is adhered to the fifth bonding surface 32, that is, the lower end surface 15 of the carrier 10 covers the gap between the inner wall of the second ring body 30 and the outer wall of the third ring body 40, which can prevent the polymer above the wafer from entering the gap between the inner wall of the second ring body 30 and the outer wall of the third ring body 40.

[0078] Combine Figure 4 As shown, the etching apparatus further includes a chuck 50 having a stepped cylindrical structure. A portion of the chuck 50 is internally disposed within the second ring body 30, while another portion extends upwardly into the carrier 10. The chuck 50 has an adsorption surface 51 coplanar with the carrier plane 13 and configured to adsorb and secure a wafer 60 supported on the carrier plane 13. The chuck 50 is, for example, an electrostatic chuck. The chuck 50 and the third ring body 40 may be connected via thermally conductive adhesive to enhance thermal conductivity.

[0079] In addition, the etching equipment also includes an etching chamber, a gas supply system, a radio frequency system, a vacuum system, etc. The etching equipment of the present invention is different from the existing etching equipment in the above-mentioned difference in the wafer supporting assembly used for etching and the difference in the way the assembly cooperates with the second ring body 30, the third ring body 40 and the chuck 50. The other structures are consistent with the existing etching equipment and will not be repeated here.

[0080] The various embodiments described in this specification are intended to be exemplary only. The same or similar features can be combined in any combination. The various embodiments described in this specification can be implemented in any combination.

[0081] The above description is only the preferred embodiment of the present application, and is not intended to limit the scope of the present application. Any modification, amendment, or improvement made by those skilled in the art based on the above disclosure should be within the scope of the claims of the present application.

Claims

1. A wafer carrying assembly for etching, characterized in that: include: a bearing member and a first ring body; The carrier is used to carry the wafer, and the carrier has a carrying cavity that passes through the first ring body in the axial direction. The carrier is sleeved inside the first ring body, and the outer wall of the carrier is conformally fitted with the inner wall of the first ring body; The carrier has a first fitting surface, which is perpendicular to the axial direction of the first ring body and forms a closed annular structure around the carrier cavity. The first ring body has a second fitting surface, which is perpendicular to the axial direction of the first ring body and forms a closed annular structure around the carrier cavity. The first fitting surface and the second fitting surface are fitted together.

2. The wafer carrier assembly for etching according to claim 1, wherein: The inner wall of the bearing cavity has a bearing plane, which is an annular closed structure surrounding the bearing cavity. The bearing plane is perpendicular to the axial direction of the first ring body and is used to bear wafers.

3. The wafer carrier assembly for etching according to claim 2, wherein: The inner wall of the bearing cavity includes a first diameter segment and a second diameter segment arranged along the axial direction of the first ring body, the inner diameter of the first diameter segment is larger than the inner diameter of the second diameter segment, and the first diameter segment and the second diameter segment are connected by the bearing plane.

4. The wafer carrier assembly for etching according to claim 2, wherein: The end face of the carrier close to one end of the first diameter segment along the axial direction of the first ring body is parallel to the carrier plane, and the distance between the end face and the carrier plane along the axial direction of the first ring body is equal to the thickness of the wafer to be carried.

5. The wafer carrier assembly for etching according to claim 1, wherein: The outer wall of the bearing member includes a third diameter segment and a fourth diameter segment arranged along the axial direction of the first ring body, the outer diameter of the third diameter segment is smaller than the outer diameter of the fourth diameter segment, and the third diameter segment and the fourth diameter segment are connected via the first abutting surface; The inner wall of the first ring body includes a fifth diameter segment and a sixth diameter segment arranged along the axial direction of the first ring body, the inner diameter of the fifth diameter segment is smaller than the inner diameter of the sixth diameter segment, and the fifth diameter segment and the sixth diameter segment are connected by the second abutting surface; The third diameter segment is conformably fitted with the fifth diameter segment, and the fourth diameter segment is conformably fitted with the sixth diameter segment.

6. The wafer carrier assembly for etching according to claim 5, wherein: The inner wall of the first ring body further includes a seventh diameter segment; The inner diameter of the seventh diameter section is greater than the inner diameter of the sixth diameter section; Along the axial direction of the first ring body, the sixth diameter segment is located between the fifth diameter segment and the seventh diameter segment. The sixth diameter segment and the seventh diameter segment are connected via a third fitting surface. The third fitting surface forms a closed annular structure around the bearing cavity.

7. An etching device, characterized in that: comprising a second ring body and a wafer carrying assembly for etching according to any one of claims 1 to 6; The second ring body has an annular fourth fitting surface and a fifth fitting surface at one end thereof along the axial direction, and the fourth fitting surface and the fifth fitting surface have a height difference along the axial direction of the second ring body; The fourth fitting surface is fitted with one axial end of the first ring body, and the fifth fitting surface is fitted with the third fitting surface.

8. The etching device according to claim 7, wherein: When the outer wall of the bearing member includes a third diameter section and a fourth diameter section, The outer diameter of the fourth diameter section is greater than the inner diameter of the second ring body, and the end surface portion of the bearing component close to the fourth diameter section along its axial direction is in contact with the fifth contact surface.

9. The etching device according to claim 7, characterized in that: The etching equipment also includes a third ring body, which is placed in the second ring body. The outer wall of the third ring body is conformally fitted with the inner wall of the second ring body, and one end of the third ring body along its axial direction is fitted with one end of the carrier along its axial direction.

10. The etching device according to claim 9, characterized in that: The etching device further includes a chuck, at least a portion of which is built into the second ring body, and the chuck has an adsorption surface, and the adsorption surface is used to adsorb the wafer carried on the carrier; When the supporting member has a supporting plane, the adsorption surface is coplanar with the supporting plane.

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