Wafer supporting ring, wafer bearing device and MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial equipment

Abstract

The invention discloses a wafer supporting ring, a wafer bearing device and MOCVD epitaxy equipment, the wafer supporting ring comprises a peripheral edge, an extension part and an annular connecting part, the peripheral edge extends upwards along the radial outer end of the connecting part, the extension part extends downwards along the radial inner end of the connecting part, and the extension part extends downwards along the radial outer end of the connecting part. The radial outer side of the extending part and the bottom of the connecting part form a mounting groove, the periphery is bent towards the radial outer side of the connecting part, a clamping groove is formed in the bent position of the back face of the periphery, and the plane where the top of the clamping groove is located is higher than the plane where the top of the mounting groove is located. Through the structural design of the clamping grooves and the mounting grooves, the precision and reliability of the wafer supporting ring are improved, damage or position deviation caused by touching the edge of the wafer bearing disc when a mechanical arm takes and places the wafer is avoided, and the wafer supporting ring has remarkable advantages.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing equipment, in particular to a wafer carrier ring of a MOCVD epitaxial equipment, a wafer bearing device and a MOCVD epitaxial equipment. BACKGROUND

[0002] MOCVD equipment (Metal-Organic Chemical Vapor Deposition) is a core process equipment for growing high-quality semiconductor thin films. Its principle is to transport metal organic sources (such as trimethyl gallium TMGa and trimethyl indium TMIn) and hydrides (such as ammonia NH3 and phosphine PH3) into the reaction chamber under the action of carrier gas (hydrogen or nitrogen) through high-temperature chemical reaction, and then deposit on the substrate surface layer by layer after thermal decomposition to form III-V compound semiconductor epitaxial structure (such as GaN, GaAs, InP). The MOCVD equipment includes a reaction chamber, which usually includes a susceptor, a bearing disc and a wafer carrier ring arranged on the susceptor. The susceptor outputs gas upward and blows to the bearing disc and the wafer carrier ring, so that the bearing disc and the wafer carrier ring are suspended and rotate at a predetermined speed together. The wafer carrier ring is a core component of the MOCVD equipment for carrying substrates (such as sapphire and silicon wafers). In a multi-wafer MOCVD equipment, the wafer carrier ring needs to carry wafers and suspend and rotate with the wafers under the action of gas flow. It needs to uniformly transmit heat, and uniformly transmit heat to the substrate through high-heat-conducting materials (such as high-purity graphite and silicon carbide coated graphite). In the high-end manufacturing of Mini / Micro LED, third-generation semiconductor (SiC / GaN) and the like, the precision and reliability of the wafer carrier ring become one of the core elements to improve the performance of the device. The size of the edge of the existing wafer carrier ring is usually only a few millimeters, and the clamping position of the traditional mechanical hand is usually at the same horizontal plane as the bearing disc. Due to vibration or long-term wear, the positioning accuracy of the mechanical hand decreases, which causes the wafer carrier ring to be placed and taken to easily touch the edge of the bearing disc, causing damage to the bearing disc or position deviation, which needs to be frequently calibrated and seriously affects the production efficiency of thin film deposition. In view of the above problems, the existing technology needs to be improved. SUMMARY

[0003] The purpose of the present application is to provide a wafer carrier ring of a MOCVD epitaxial equipment, a wafer bearing device and a MOCVD epitaxial equipment, which has the advantages of improving the precision and reliability of the wafer carrier ring, reducing gas consumption, and avoiding damage or position deviation caused by the mechanical hand when placing and taking the wafer carrier ring.

[0004] The first aspect of the present application provides a wafer holder ring of a MOCVD epitaxial device, and the technical scheme is as follows: the wafer holder ring comprises a peripheral edge, an extension part, and a ring-shaped connecting part, the peripheral edge extends upwards along a radially outer end of the connecting part, the extension part extends downwards along a radially inner end of the connecting part, the extension part and a bottom of the connecting part form a mounting groove radially outside the extension part, the peripheral edge is bent radially outside the connecting part, and a clamping groove is formed at the bent part on the back of the peripheral edge, wherein the height of a plane where a top of the clamping groove is located is higher than the height of a plane where a top of the mounting groove is located.

[0005] Further, the peripheral edge comprises a first wall and a second wall, an outer surface of the first wall is perpendicular to a lower surface of the second wall, a transition area between the first wall and the second wall is chamfered, the outer surface of the first wall is a side surface of the clamping groove, and the lower surface of the second wall is an upper end surface of the clamping groove.

[0006] Further, the connecting part comprises an upper support surface extending radially from a radially inner boundary of the peripheral edge to a radially inner edge of the connecting part, and a lower support surface extending radially from a radially outer boundary of the extension part to a radially outer edge of the connecting part, a transition area between the lower support surface and an inner surface of the extension part is chamfered, an outer surface of the extension part is a side surface of the mounting groove, and the lower support surface is an upper end surface of the side surface of the mounting groove.

[0007] Further, the outer surface of the first wall is adjacent to the lower support surface, and a transition area between the outer surface of the first wall and the lower support surface is chamfered.

[0008] Further, the height of a horizontal plane where a lower end of the outer surface of the first wall is located is lower than the height of the upper support surface. Further, the present application further provides that a radially outer surface of the second wall transitions to an upper horizontal surface of the second wall in the form of an extended inclined surface, and an edge of the upper horizontal surface transitions to a radially inner surface of the first wall in the form of a curved surface.

[0009] Further, an edge of the upper support surface transitions to an inner surface of the extension part in the form of a round chamfer, the inner surface of the extension part is an inclined surface that is inwardly recessed from top to bottom, and the inner surface of the extension part is adjacent to a lower horizontal surface of the extension part.

[0010] Further, the radial width of the upper support surface is smaller than the radial width of the lower horizontal surface of the extension part.

[0011] The second aspect of the present application provides a wafer carrying device of a MOCVD epitaxial equipment, comprising any one of the wafer rings and a wafer carrying disc, wherein the wafer carrying disc comprises a central boss, a support flange arranged around the central boss, and a limiting groove clamped between the central boss and the support flange, when the wafer ring is installed on the wafer carrying disc, the top of the support flange abuts against the lower support surface, the extension part extends into the limiting groove, and the lower horizontal surface of the extension part abuts against the bottom of the limiting groove, wherein the height of the support flange is less than the height of the central boss, and the height difference between the central boss and the support flange is equal to the height difference between the upper support surface and the lower support surface.

[0012] The third aspect of the present application provides a MOCVD epitaxial equipment comprising any one of the wafer rings.

[0013] The present application provides a wafer ring, a wafer carrying device and a MOCVD epitaxial equipment, which improves the precision and reliability of the wafer ring through the structural design of the clamping groove and the mounting groove, and avoids damage or position deviation caused by the mechanical hand touching the edge of the wafer carrying disc when taking and placing. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 A structural schematic diagram of a wafer ring provided by the present application is shown in the figure;

[0015] Figure 2 A structural schematic diagram of a base provided by the present application is shown in the figure, wherein the base is installed with a wafer ring and a wafer carrying disc;

[0016] Figure 3 A wafer ring provided by the present application is shown in the figure; Figure 2 A sectional view along the A-A direction.

[0017] In the figure: 1, base; 2, wafer ring; 20, mounting groove; 21, connecting part; 211, upper support surface; 212, lower support surface; 213, transition area; 22, peripheral edge; 221, outer surface; 222, lower surface; 23, extension part; 231, outer side surface; 24, lower horizontal surface; 25, inner side surface; 26, clamping groove; 27, radial outer side surface; 271, second wall; 28, upper horizontal surface; 29, first wall; 291, radial inner side surface; 3, wafer carrying disc; 31, central boss; 32, support flange; 33, limiting groove; 34, cavity; 35, outer side surface; 4, coating layer; 41, gap. DETAILED DESCRIPTION

[0018] The technical solutions in the present application will be described clearly and completely in the present application in combination with the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. The components of the present application described and shown in the drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative work belong to the scope of protection of the present application. It should be noted that: similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. Meanwhile, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0019] Please refer to Figures 1-3 The present application provides a wafer holder ring 2 of MOCVD epitaxial equipment, which comprises a peripheral edge 22, an extension 23 and a ring-shaped connecting portion 21. The peripheral edge 22 extends upward along the radially outer end of the connecting portion 21, and the extension 23 extends downward along the radially inner end of the connecting portion 21. The radially outer side of the extension 23 and the bottom of the connecting portion 21 form a mounting groove 20, and the peripheral edge 22 is bent towards the radially outer side of the connecting portion 21, and a clamping groove 26 is formed at the bent part on the back of the peripheral edge 22. The height of the plane where the top of the clamping groove 26 is located is higher than the height of the plane where the top of the mounting groove 20 is located.

[0020] Specifically, the peripheral edge 22 extends upward along the connecting portion 21 to form a ring-shaped continuous wall. On the one hand, the upwardly extending peripheral edge 22 forms a shielding wall to prevent the wafer from flying out under the action of centrifugal force during rotation, and on the other hand, it can block excessive deposition of reaction gas on the edge of the wafer, which helps to ensure the thickness consistency of the wafer edge and the central film deposition. The downwardly extending extension 23 can better cooperate with the limiting groove 33 of the carrier disc to ensure the positioning accuracy of the wafer holder ring 2 during rotation. The formation of the mounting groove 20 enables the wafer holder ring 2 to be stably mounted on the carrier disc, which helps to provide additional support and stability when the wafer holder ring 2 cooperates with the carrier disc. The peripheral edge 22 is bent towards the radially outer side of the connecting portion 21, and the clamping groove 26 is formed at the bent part on the back of the peripheral edge 22, which facilitates the clamping operation of the mechanical hand when taking and placing the wafer holder ring 2. Moreover, the top plane of the clamping groove 26 is higher than the top plane of the mounting groove 20, which separates the positions of the mounting groove 20 and the clamping groove 26 in space in terms of inside and outside and up and down, ensuring that the mechanical hand will not touch the carrier disc during operation, thereby reducing the risk of damage to the carrier disc.

[0021] In some embodiments, the periphery 22 of the wafer holder ring 2 comprises a first wall 29 and a second wall 271, the outer surface 221 of the first wall 29 is perpendicular to the lower surface 222 of the second wall 271, the transition area 213 between the first wall 29 and the second wall 271 is chamfered, the outer surface 221 of the first wall 29 is the side surface of the clamping groove 26, and the lower surface 222 of the second wall 271 is the upper end surface of the clamping groove 26.

[0022] Specifically, the design that the outer surface 221 of the first wall 29 is perpendicular to the lower surface 222 of the second wall 271 ensures the structural stability of the clamping groove 26, facilitating the clamping and fixing of the wafer. The chamfered transition area between the first wall 29 and the second wall 271 can effectively reduce stress concentration and avoid material fatigue or fracture caused by stress concentration during long-term use. The outer surface 221 of the first wall 29 as the side surface of the clamping groove 26 is a vertical surface, which can save materials and maximize the operation space of the robot, ensuring the accurate positioning of the wafer holder ring 2 during picking and placing. The lower surface 222 of the second wall 271 as the upper end surface of the clamping groove 26 can provide a stable support surface for the robot, preventing it from falling off during operation.

[0023] In some embodiments, the angle of the chamfer can be adjusted according to actual application requirements, for example, a 45-degree chamfer can be used to further optimize stress distribution while ensuring structural strength. In addition, the perpendicularity of the outer surface 221 of the first wall 29 and the lower surface 222 of the second wall 271 can be achieved through precision machining processes, ensuring the accuracy and reliability of the clamping groove 26.

[0024] The technical solution optimizes the structure of the periphery 22 of the wafer holder ring 2, solving the problem that the wafer carrier disk 3 is damaged or positionally offset due to the decreased positioning accuracy of the robot during picking and placing in the prior art. Through the chamfer design and the cooperation of the vertical surface, the structural stability and service life of the wafer holder ring 2 are improved, the frequency of equipment maintenance is reduced, and the production efficiency is improved.

[0025] In some embodiments, the connecting portion 21 comprises an upper support surface 211 extending radially from the radially inner boundary of the periphery 22 to the radially inner edge of the connecting portion 21, and a lower support surface 212 extending radially from the radially outer boundary of the extension portion 23 to the radially outer edge of the connecting portion 21. The transition area 213 between the lower support surface 212 and the inner surface of the extension portion 23 is chamfered, the outer surface 221 of the extension portion 23 is the side surface of the mounting groove 20, and the lower support surface 212 is the upper end surface of the mounting groove 20.

[0026] Specifically, the upper support surface 211 extends radially from the radially inner boundary of the peripheral edge 22 to the radially inner edge of the connecting portion 21, forming a support structure. The lower support surface 212 extends radially from the radially outer boundary of the extension portion 23 to the radially outer edge of the connecting portion 21. The outer surface 221 of the extension portion 23 serves as the side surface of the mounting groove 20, and the lower support surface 212 serves as the upper end surface of the mounting groove 20, ensuring stability and accuracy during installation.

[0027] In some embodiments, the radially outer edge of the upper support surface 211 is closer to the radially outer side than the radially inner edge of the lower support surface 212. This design allows the peripheral edge 22 and the extension portion 23 to be radially offset from each other, resulting in a narrower radial width of the peripheral edge 22 and the extension portion 23, thereby reducing the weight of the peripheral edge 22 and the extension portion 23, and further reducing the weight of the entire wafer carrier ring 2, solving the problem of excessive weight of the wafer carrier ring 2 in the prior art, which causes more gas consumption during rotation and unstable rotation posture.

[0028] Further, the radial distance between the radially outer edge of the upper support surface 211 and the radially inner edge of the lower support surface 212 is 2-20mm, further 2-10mm, and further 2-5mm.

[0029] In some embodiments, the radial width of the first wall 29 of the peripheral edge 22 is 2-10mm, and the radial width of the bottom of the extension portion 23 is 2-15mm.

[0030] In some embodiments, the height of the first wall 29 of the peripheral edge 22 is 5-20mm, and the radial width of the second wall 271 is 5-20mm.

[0031] By increasing the height of the first wall 29 and the radial width of the second wall 271, the size of the clamping groove 26 is large enough to solve the problem of reduced mechanical hand operation precision caused by small edge size.

[0032] The present application improves the installation stability of the wafer carrier ring 2 by matching the mounting groove 20 and the clamping groove 26, and reduces the damage to the wafer carrier plate 3 caused by improper operation of the mechanical hand, thereby improving the production efficiency and reliability of the MOCVD equipment.

[0033] In some embodiments, the transition area 213 between the lower support surface 212 and the inner surface of the extension portion 23 is designed as a chamfer, which can greatly reduce weight and stress concentration while improving structural strength.

[0034] In some embodiments, the radial width of the upper support surface 211 is greater than the radial width of the lower horizontal surface 24 of the extension 23 to optimize the stress distribution of the support structure. Optionally, the radial width of the upper support surface 211 is 4-20mm, and the radial width of the lower horizontal surface 24 is 2-10mm.

[0035] Thus, the technical solution optimizes the design of the support surface of the connecting portion 21, solving the problems of stress concentration and structural instability of the wafer holder ring 2 during installation in the prior art. The reasonable layout of the upper support surface 211 and the lower support surface 212, combined with the chamfer design, effectively improves the strength and stability of the installation groove 20, ensuring the accurate installation and reliable operation of the wafer holder ring 2 in the MOCVD equipment. Compared with the prior art, this scheme significantly improves the structural performance and service life of the wafer holder ring 2, reduces equipment failures and maintenance costs caused by improper installation.

[0036] In some embodiments, the outer surface 221 of the first wall 29 is adjacent to the lower support surface 212, and the transition area 213 between the outer surface 221 of the first wall 29 and the lower support surface 212 has a chamfer.

[0037] Specifically, the outer surface 221 of the first wall 29 is adjacent to the lower support surface 212, which means that the outer surface 221 of the first wall 29 is in direct contact or close to the lower support surface 212, forming a continuous surface structure. The chamfer design plays a role in smooth transition in the transition area 213, reducing stress concentration and improving the mechanical strength and durability of the structure. The specific implementation of the chamfer can be a circular chamfer or an inclined chamfer, where the circular chamfer can better disperse stress, and the inclined chamfer is convenient for processing and manufacturing.

[0038] Further, the radius or angle of the chamfer can be adjusted according to actual application requirements to ensure that the structural strength is met while not affecting the overall size and function of the wafer holder ring 2. For example, the radius of the chamfer can be selected between 0.5mm and 2mm, and the specific value depends on the material properties and processing technology. By setting the chamfer in the transition area 213 between the outer surface 221 of the first wall 29 and the lower support surface 212, stress concentration is effectively reduced, and the mechanical strength and durability of the wafer holder ring 2 are improved. Compared with the prior art, this technical solution not only simplifies the manufacturing process, but also improves the stability and reliability of the wafer holder ring 2 during use, and significantly reduces the weight, thereby solving the problems of large gas consumption and instability in suspension rotation.

[0039] In some embodiments, the height of the horizontal plane where the lower end of the outer surface 221 of the first wall 29 is located is lower than the height of the upper support surface 211. Specifically, there is a height difference between the lower end of the outer surface 221 of the first wall 29 and the upper support surface 211, which makes the outer surface 221 of the first wall 29 form a certain sinking structure in the vertical direction relative to the upper support surface 211. Thus, better structural stability and fitting accuracy are provided during installation and use.

[0040] In some embodiments, the radially outer side surface 27 of the second wall 271 transitions to the upper horizontal surface 28 of the second wall 271 in an extended inclined surface manner, and the edge of the upper horizontal surface 28 transitions to the radially inner side surface 291 of the first wall 29 in a curved surface manner. Among them, the inclined surface transition design between the radially outer side surface 27 of the second wall 271 and the upper horizontal surface 28 can effectively reduce stress concentration and improve the overall strength of the structure, and more importantly, can reduce the weight of the wafer holder ring 2. The edge of the upper horizontal surface 28 transitions to the radially inner side surface 291 of the first wall 29 in a curved surface manner, which further optimizes the stress distribution of the structure, avoids the problem of local stress concentration caused by sharp edges, and at the same time can be more smoothly put into the wafer, playing a role in guiding the wafer into. By optimizing the transition structure between the second wall 271 and the first wall 29, the stress concentration and insufficient structural strength caused by unreasonable edge design in the prior art are solved, the weight is reduced, and the problem of large gas consumption and unstable rotation caused by the overall overweight of the wafer holder ring 2 is further solved.

[0041] In some embodiments, the edge of the upper support surface 211 transitions to the inner side surface 25 of the extension 23 in a round chamfer, and the inner side surface 25 of the extension 23 is an inclined surface that is inwardly recessed from top to bottom, and the inner side surface 25 of the extension 23 is adjacent to the lower horizontal surface 24 of the extension 23.

[0042] Specifically, the edge of the upper support surface 211 smoothly transitions to the inner side surface 25 of the extension 23 through a round chamfer, which can effectively reduce stress concentration and improve the overall strength of the structure. The inner side surface 25 of the extension 23 is designed as an inclined surface that is inwardly recessed from top to bottom, which helps to achieve better positioning and fixing during installation of the wafer holder ring 2, plays a guiding role and reduces friction with the wafer carrier disc 3. The inner side surface 25 of the extension 23 is adjacent to the lower horizontal surface 24, which ensures that the extension 23 can be stably embedded in the limiting groove 33 of the wafer carrier disc 3 during installation, avoiding positioning deviation caused by vibration or wear.

[0043] The technical scheme optimizes the transition mode of the upper supporting surface 211 and the inner side surface 25 of the extension part 23, and the slope design of the inner side surface 25 of the extension part 23, solves the structural damage or position deviation problem of the wafer ring 2 caused by stress concentration or inaccurate positioning in the installation process in the prior art. This design not only improves the installation accuracy and stability of the wafer ring 2, but also prolongs the service life of the equipment and reduces the frequency of maintenance and calibration.

[0044] In some embodiments, the radial width of the upper supporting surface 211 is greater than the radial width of the lower horizontal surface 24 of the extension part 23. Specifically, the upper supporting surface 211 is a part of the connecting part 21, which extends radially from the radially inner boundary of the peripheral edge 22 to the radially inner edge of the connecting part 21, and the radial width of the upper supporting surface 211 refers to its radial dimension. The lower horizontal surface 24 of the extension part 23 is a part of the extension part 23, which is located at the bottom of the extension part 23, and the radial width of the lower horizontal surface 24 refers to its radial dimension. By making the radial width of the upper supporting surface 211 greater than the radial width of the lower horizontal surface 24 of the extension part 23, it can be ensured that there is space next to the upper supporting surface 211 and the lower horizontal surface 24 as the lower supporting surface 212, so that the upper supporting surface 211 has enough area to support the wafer and facilitate better positioning and fixing support of the wafer ring 2 during installation.

[0045] Further, the radial width of the lower horizontal surface 24 can be designed to be 40% to 80% of the radial width of the upper supporting surface 211, to ensure that the relative size of the upper supporting surface 211 and the lower horizontal surface 24 is moderate, neither too different to affect the stability of the structure, nor too small to cause the size of the extension part 23 to be too large and increase the overall weight of the wafer ring 2. In addition, the transition area 213 between the upper supporting surface 211 and the lower horizontal surface 24 can be designed as a round chamfer to reduce stress concentration and improve the durability of the structure.

[0046] To this end, the technical scheme of the present application optimizes the radial width relationship between the upper supporting surface 211 and the lower horizontal surface 24, and solves the problem of instability of the wafer ring 2 in the suspension process in the prior art. Since the radial width of the upper supporting surface 211 is less than the radial width of the lower horizontal surface 24, the wafer ring 2 can be positioned more stably on the wafer supporting disc 3 during installation, avoiding the decline in positioning accuracy caused by vibration or wear. In addition, this design also simplifies the installation process of the wafer ring 2 and improves production efficiency. Compared with the prior art, the technical scheme of the present application further improves the installation accuracy and reliability of the wafer ring 2 while ensuring the stability of the structure.

[0047] Further, the application also proposes a wafer bearing device of a MOCVD epitaxial equipment, which comprises a wafer holder ring 2 and a wafer bearing disc 3. The wafer bearing disc 3 comprises a central boss 31 and a support flange 32 arranged around the central boss 31, and a limiting groove 33. The limiting groove 33 is formed by downwardly recessing the top surface of the support flange 32 close to the central boss 31. When the wafer holder ring 2 is installed on the wafer bearing disc 3, the top of the support flange 32 abuts against the lower support surface 212, the extension 23 extends into the limiting groove 33, and the lower horizontal surface 24 of the extension 23 abuts against the bottom of the limiting groove 33. The height of the support flange 32 is less than the height of the central boss 31, and the height difference between the central boss 31 and the support flange 32 is equal to the height difference between the upper support surface 211 and the lower support surface 212.

[0048] Specifically, the design of the wafer bearing disc 3 ensures the stable installation of the wafer holder ring 2 through the cooperation of the central boss 31 and the support flange 32. The setting of the limiting groove 33 enables the accurate embedding of the extension 23, avoiding the deviation or loosening of the wafer holder ring 2 during the installation process. The abutment of the support flange 32 and the lower support surface 212 further enhances the stability of the structure. The height difference design between the central boss 31 and the support flange 32 enables the accurate matching of the height difference between the upper support surface 211 and the lower support surface 212, thereby ensuring the levelness and stability of the wafer holder ring 2 on the bearing disc.

[0049] In some embodiments, the outer side surface 35 of the central boss 31 is a vertical surface, and the inner side surface 25 of the extension 23 is an inclined surface, leaving a cavity 34 between the vertical surface and the inclined surface. On the one hand, the extension 23 can be better guided into the limiting groove 33, and on the other hand, the cavity 34 between the central boss 31 and the extension 23 reduces the overall weight of the structure, solving the problem of large gas consumption and unstable rotation caused by the overall overweight of the wafer bearing device.

[0050] In some embodiments, the top of the support flange 32 can be designed as a flat surface to ensure sufficient contact with the lower support surface 212. The bottom of the limiting groove 33 can also be designed as a flat surface to tightly fit with the lower horizontal surface 24 of the extension 23. In addition, the height difference between the central boss 31 and the support flange 32 can be achieved through precision machining to ensure the accurate matching of the height difference between the upper support surface 211 and the lower support surface 212. The outer side surface 231 of the extension 23 is radially limited by the support flange 32 to prevent the wafer holder ring 2 from flying out during rotation.

[0051] Therefore, the technical scheme optimizes the structural design of the wafer carrier disc 3, solves the problems of possible deviation and loosening of the wafer retaining ring 2 during installation, and improves the installation precision and stability of the wafer retaining ring 2. Compared with the prior art, the scheme realizes accurate positioning and stable installation of the wafer retaining ring 2 through cooperation of the central boss 31, the supporting flange 32 and the limiting groove 33, reduces errors in the installation process, and improves the overall performance and reliability of the MOCVD epitaxial equipment.

[0052] Further, the present application also provides a MOCVD epitaxial equipment, which comprises the wafer retaining ring 2 and the wafer carrier disc 3 according to any one of the above embodiments. The MOCVD epitaxial equipment comprises a susceptor 1, and the wafer carrier disc 3 and the wafer retaining ring 2 arranged on the susceptor 1. The susceptor 1 outputs gas upward and blows to the wafer carrier disc 3 and the wafer retaining ring 2, so that the wafer carrier disc 3 and the wafer retaining ring 2 are suspended and rotate at a predetermined speed.

[0053] In some embodiments, the susceptor 1 is coated with a coating layer 4, such as tantalum carbide or silicon carbide, and a gap 41 is left between the coating layer 4 and the wafer carrier device. The gap 41 at a specific position can be used for a mechanical arm to insert and lift the wafer retaining ring 2. The specific position can be selected as two opposite sides of the wafer retaining ring 2.

[0054] The MOCVD epitaxial equipment of the present application optimizes the structural design of the wafer retaining ring 2, solves the problem of excessive weight of the wafer retaining ring 2 in the prior art affecting the rotation precision and increasing gas consumption. At the same time, by improving the size of the edge of the wafer retaining ring 2 and the design of the clamping groove 26, the problem of damage or position deviation caused by the mechanical hand touching the edge of the wafer carrier disc 3 when taking and placing the wafer retaining ring 2 is avoided, thereby improving the production efficiency of thin film deposition.

[0055] The above only describes the embodiments of the present application and is not used to limit the protection scope of the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A wafer support ring for MOCVD epitaxial equipment, characterized in that: The wafer support ring includes a periphery, an extension portion, and an annular connecting portion, wherein the periphery extends upward along the radial outer end of the connecting portion, and the extension portion extends downward along the radial inner end of the connecting portion. The radial outer side of the extension portion and the bottom of the connecting portion form a mounting groove, and the periphery is bent toward the radial outer side of the connecting portion, and a clamping groove is formed at the bending portion on the back side of the periphery, wherein the height of the plane where the top of the clamping groove is located is higher than the height of the plane where the top of the mounting groove is located.

2. The wafer support ring of the MOCVD epitaxial equipment according to claim 1, wherein: The periphery includes a first wall and a second wall, the outer surface of the first wall and the lower surface of the second wall are perpendicular to each other, the transition area between the first wall and the second wall has a chamfer, the outer surface of the first wall is the side surface of the clamping groove, and the lower surface of the second wall is the upper end surface of the clamping groove.

3. The wafer support ring of the MOCVD epitaxial equipment according to claim 2, wherein: The connecting portion includes an upper supporting surface radially extending from the radial inner boundary of the periphery to the radial inner edge of the connecting portion, and a lower supporting surface radially extending from the radial outer boundary of the extension portion to the radial outer edge of the connecting portion, the transition area between the lower supporting surface and the inner surface of the extension portion has a chamfer, the outer surface of the extension portion is the side surface of the mounting groove, and the lower supporting surface is the upper end surface of the side surface of the mounting groove.

4. The wafer support ring of the MOCVD epitaxial equipment according to claim 3, wherein: The outer surface of the first wall is adjacent to the lower support surface, and a transition area between the outer surface of the first wall and the lower support surface has a chamfer.

5. The wafer support ring of the MOCVD epitaxial equipment according to claim 3, wherein: The height of the horizontal plane where the lower end of the outer surface of the first wall is located is lower than the height of the upper supporting surface.

6. The wafer support ring of the MOCVD epitaxial equipment according to claim 3, wherein: The radially outer side surface of the second wall transitions to the upper horizontal surface of the second wall in the form of an extended inclined surface, and the edge of the upper horizontal surface transitions to the radially inner side surface of the first wall in the form of a curved surface.

7. The wafer support ring of the MOCVD epitaxial equipment according to claim 3, wherein: The edge of the upper support surface transitions to the inner side surface of the extension portion with a round chamfer. The inner side surface of the extension portion is an inclined surface that contracts inward from top to bottom. The inner side surface of the extension portion is adjacent to the lower horizontal surface of the extension portion.

8. The wafer support ring of the MOCVD epitaxial equipment according to claim 7, wherein: The radial width of the upper supporting surface is greater than the radial width of the lower horizontal surface of the extension portion.

9. A wafer carrier for MOCVD epitaxial equipment, characterized in that: The wafer support ring comprises any one of claims 3 to 8, and a wafer carrier, wherein the wafer carrier comprises a central boss and a supporting flange arranged around the central boss, and a limiting groove sandwiched between the central boss and the supporting flange, wherein the limiting groove is formed by a downward depression of the top surface of the supporting flange close to the central boss, and when the wafer support ring is mounted on the wafer carrier, the top of the supporting flange abuts the lower supporting surface, the extension extends into the limiting groove, and the lower horizontal surface of the extension abuts the bottom of the limiting groove, wherein the height of the supporting flange is less than the height of the central boss, and the height difference between the central boss and the supporting flange is equal to the height difference between the upper supporting surface and the lower supporting surface.

10. A MOCVD epitaxial device, characterized in that: The wafer support ring comprises the wafer support ring according to any one of claims 1 to 8.

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