Indium gallium zinc oxide target material, method for preparing same, and use thereof

Abstract

The application discloses an indium gallium zinc oxide target material and a preparation method and application thereof, and comprises the following preparation raw materials in parts by weight: 15-45 parts of indium oxide, 29-32 parts of gallium oxide, 25-54 parts of zinc oxide powder and 0.01-0.05 parts of antimony pentoxide. The indium gallium zinc oxide target material can effectively reduce the sintering temperature of the target material and the volatilization rate of raw materials without additional oxygen.

Description

Technical Field

[0001] This invention relates to the field of metal target technology, and in particular to an indium gallium zinc oxide target, its preparation method, and its application. Background Technology

[0002] Driven by three waves of application—laptops, monitors, and televisions—display technology has undergone multiple developments, with high-resolution, vibrant, and low-power displays becoming the preferred choice. Thin-film transistor-driven liquid crystal displays (TFT-LCDs) have demonstrated excellent research results, and TFT devices have received widespread attention as a key research focus. Although amorphous silicon (α-Si) TFT devices with active layers are widely used due to their low cost and simple fabrication, the mobility of α-Si TFT devices is insufficient to meet the demands of high-refresh-rate display technologies, and they are gradually being replaced by amorphous indium gallium zinc oxide (α-IGZO) TFTs. α-IGZO TFT devices have a mobility more than 20 times that of α-Si TFT devices, and α-IGZO films exhibit good uniformity, stability, simple processing, and high transparency, meeting the requirements of fast response, large size, and high resolution in displays. Among existing coating technologies, magnetron sputtering is widely used in industry due to its ability to deposit films over large areas, easy control of film growth, stable film quality, and strong film adhesion. High-quality IGZO thin films are generally prepared by magnetron sputtering, and the IGZO target is a key factor determining the quality of the film. Traditional methods for preparing IGZO targets require ultra-high temperature and long-term sintering, which is costly, and indium and zinc are prone to volatilization at high temperatures, severely affecting the composition of the target. Therefore, preparing high-quality IGZO targets at low temperature and low cost is an important problem that urgently needs to be solved. Summary of the Invention

[0003] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention proposes an indium gallium zinc oxide target that can effectively reduce the sintering temperature and raw material volatilization rate without the need for additional oxygen introduction.

[0004] A first aspect of the present invention provides an indium gallium zinc oxide target material, comprising the following raw materials in parts by weight:

[0005]

[0006] 1. With the above composition, indium oxide typically forms conductive free electrons during heating, while zinc oxide enhances electron mobility by increasing oxygen defect density. The oxide solution formed between indium oxide and zinc oxide exhibits good chemical and thermal stability, remaining stable at high temperatures and providing excellent conductivity. Gallium oxide forms a solid solution with indium oxide and zinc oxide, among other oxides, which helps improve the thermal and chemical stability of IGZO. The Ga in gallium oxide... 3+ Ions can modulate the carrier concentration of indium oxide and zinc oxide, and through the doping effect of gallium oxide, adjust the electronic structure of the material, thereby improving its conductivity and transparency. Antimony pentoxide continuously decomposes and releases oxygen during sintering. This oxygen reacts with indium oxide and zinc oxide, preventing their reduction or decomposition, thus stabilizing the target material's composition. By forming a liquid phase, antimony pentoxide not only accelerates the sintering process but also lowers the sintering temperature. Low-temperature sintering helps improve the material's density and reduces excessive evaporation or reduction of indium oxide and zinc oxide, thereby ensuring the stability and uniformity of the target material.

[0007] 2. The combined action of indium oxide (IO), zinc oxide (ZO), gallium oxide (GaO), and antimony pentoxide (STPO) promotes sintering at lower temperatures and reduces potential component decomposition and loss during the sintering process. IO, ZO, and GaO optimize the conductivity of IGZO by adjusting carrier concentration, while STPO provides an oxygen source to prevent the decomposition of IO and ZO, ensuring stable conductivity of the IGZO material. Especially during high-temperature sintering, STPO effectively inhibits the decomposition of IO and ZO. During heating, STPO continuously decomposes and releases oxygen, further suppressing the decomposition of IO and ZO. Simultaneously, its low melting point provides a liquid phase for the sintering process, lowering the target sintering temperature. Specifically, STPO continuously decomposes and releases oxygen during sintering. This oxygen reacts with IO and ZO, preventing their reduction or decomposition, thus stabilizing the target composition. By forming a liquid phase, STPO not only accelerates the sintering process but also lowers the sintering temperature. Low-temperature sintering helps to improve the density of materials and reduce the excessive evaporation or reduction of indium oxide and zinc oxide, thereby ensuring the stability and uniformity of the target material.

[0008] According to some embodiments of the present invention, the purity of the indium oxide is ≥99.99%.

[0009] According to some embodiments of the present invention, the gallium oxide has a purity of ≥99.99%.

[0010] According to some embodiments of the present invention, the purity of the zinc oxide is ≥99.99%.

[0011] According to some embodiments of the present invention, the raw materials for preparing the indium gallium zinc oxide target also include additives; the additives include dispersants and binders.

[0012] According to some embodiments of the present invention, the dispersant includes polyacrylamide.

[0013] According to some embodiments of the present invention, the adhesive comprises polyvinyl alcohol.

[0014] According to some embodiments of the present invention, the indium gallium zinc oxide target material comprises the following raw materials calculated by weight:

[0015]

[0016] According to some embodiments of the present invention, the raw materials for preparing the indium gallium zinc oxide target also include water.

[0017] A second aspect of the present invention provides a method for preparing an indium gallium zinc oxide target, comprising the following steps:

[0018] S1. The indium oxide powder, gallium oxide powder, zinc oxide powder and antimony pentoxide powder are mixed and dispersed, and then spray-granulated to obtain mixed oxide powder;

[0019] S2. The oxide powder is shaped and then sintered.

[0020] According to some embodiments of the present invention, step S1 includes: mixing the indium oxide powder, the gallium oxide powder, the zinc oxide powder, the antimony pentoxide powder, the dispersant and water and then pouring the mixture into a grinding mill to obtain a mixed slurry. The amount of pure water added is consistent with the weight of the powder. A binder is added to the mixed slurry, and after stirring for 1 to 2 hours, spray granulation can be performed to obtain mixed oxide powder.

[0021] According to some embodiments of the present invention, the method for preparing antimony pentoxide includes: mixing antimony trioxide and hydrogen peroxide and then refluxing the mixture.

[0022] This invention synthesizes antimony pentoxide powder with sintering activity, which continuously decomposes and releases oxygen during heating, inhibiting the decomposition of indium oxide and zinc oxide. Simultaneously, this substance has a low melting point, providing a liquid phase for the sintering process and lowering the sintering temperature of the target material.

[0023] According to some embodiments of the present invention, the particle size of the antimony pentoxide powder is 10-12 nm.

[0024] According to some embodiments of the present invention, the preparation method of the indium oxide includes a chemical precipitation method.

[0025] According to some embodiments of the present invention, the method for preparing indium oxide includes dissolving an indium ingot, drying it at room temperature using a chemical precipitation method to obtain indium hydroxide, and then calcining it at high temperature to form indium oxide powder.

[0026] According to some embodiments of the present invention, the specific surface area of ​​the indium oxide powder is 12 m². 2 / g~20m 2 / g.

[0027] The surface area within the above range exhibits high reactivity, excellent dispersibility and processability, and good sintering performance.

[0028] According to some embodiments of the present invention, the molding method includes cold isostatic pressing.

[0029] According to some embodiments of the present invention, the holding time of the cold isostatic pressing is 30 to 40 minutes, and the pressure of the cold isostatic pressing is 200 to 250 MPa.

[0030] According to some embodiments of the present invention, the sintering conditions include: heating the preform obtained after molding to 650-750°C at a heating rate of 1.5-3°C / min, holding at that temperature for 3-4 hours, then heating to 1320-1410°C at a heating rate of 0.5-1°C / min, holding at that temperature for 8-10 hours, and then cooling.

[0031] According to some embodiments of the present invention, the sintering process further includes processing; the processing steps include placing the sintered target material in a lathe, polishing it with 400-grit and 800-grit grinding wheels respectively, fixing the resulting smooth target material to a copper backing plate using an indium layer, and completing the bonding process.

[0032] A third aspect of the present invention provides an application of the aforementioned indium gallium zinc oxide target in reflective films, conductive films, and organic light-emitting diodes. Detailed Implementation

[0033] The following will describe the concept and technical effects of the present invention clearly and completely with reference to embodiments, so as to fully understand the purpose, features and effects of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are all within the scope of protection of the present invention.

[0034] In the description of this invention, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0035] Unless otherwise specified, "room temperature" in this invention means 25℃±5℃.

[0036] Unless otherwise specified, "about" in this invention means that the allowable error is within ±2%.

[0037] Unless otherwise specified in the examples, the procedures should be performed under standard conditions or conditions recommended by the manufacturer. Reagents or instruments whose manufacturers are not specified are all commercially available products.

[0038] Gallium oxide powder and zinc oxide powder were purchased from Shanghai Maclean Biochemical Technology Co., Ltd., with product numbers G810511 and 768612 respectively.

[0039] Antimony trioxide powder and hydrogen peroxide were both purchased from Shanghai McLean Biochemical Technology Co., Ltd., with product numbers 768559 and H792072, respectively.

[0040] A first aspect of the present invention provides an indium gallium zinc oxide target material, comprising the following raw materials in parts by weight:

[0041]

[0042] In conjunction with the first aspect, in some embodiments of the present invention, the purity of the indium oxide is ≥99.99%.

[0043] In conjunction with the first aspect, in some embodiments of the present invention, the gallium oxide has a purity of ≥99.99%.

[0044] In conjunction with the first aspect, in some embodiments of the present invention, the purity of the zinc oxide is ≥99.99%.

[0045] In conjunction with the first aspect, in some embodiments of the present invention, the raw materials for preparing the indium gallium zinc oxide target further include additives; the additives include dispersants and binders.

[0046] In conjunction with the first aspect, in some embodiments of the present invention, the dispersant includes polyacrylamide.

[0047] In conjunction with the first aspect, in some embodiments of the invention, the adhesive comprises polyvinyl alcohol.

[0048] In conjunction with the first aspect, in some embodiments of the present invention, the indium gallium zinc oxide target material comprises the following raw materials calculated by weight:

[0049]

[0050] In conjunction with the first aspect, in some embodiments of the present invention, the raw materials for preparing the indium gallium zinc oxide target also include water.

[0051] A second aspect of the present invention provides a method for preparing an indium gallium zinc oxide target, comprising the following steps:

[0052] S1. The indium oxide powder, gallium oxide powder, zinc oxide powder and antimony pentoxide powder are mixed and dispersed, and then spray-granulated to obtain mixed oxide powder;

[0053] S2. The oxide powder is shaped and then sintered.

[0054] In conjunction with the second aspect, in some embodiments of the present invention, step S1 includes: mixing the indium oxide powder, the gallium oxide powder, the zinc oxide powder, the antimony pentoxide powder, the dispersant, and water, and then pouring the mixture into a grinding mill to obtain a mixed slurry. The amount of pure water added is consistent with the weight of the powder. A binder is added to the mixed slurry, and after stirring for 1 to 2 hours, spray granulation can be performed to obtain mixed oxide powder.

[0055] In conjunction with the second aspect, in some embodiments of the present invention, the method for preparing antimony pentoxide includes: mixing antimony trioxide and hydrogen peroxide and then refluxing the mixture.

[0056] This invention synthesizes antimony pentoxide powder with sintering activity, which continuously decomposes and releases oxygen during heating, inhibiting the decomposition of indium oxide and zinc oxide. Simultaneously, this substance has a low melting point, providing a liquid phase for the sintering process and lowering the sintering temperature of the target material.

[0057] In conjunction with the second aspect, in some embodiments of the present invention, the particle size of the antimony pentoxide powder is 10-12 nm.

[0058] In conjunction with the second aspect, in some embodiments of the present invention, the preparation method of the indium oxide includes a chemical precipitation method.

[0059] In conjunction with the second aspect, in some embodiments of the present invention, the method for preparing indium oxide includes dissolving an indium ingot, drying it at room temperature using a chemical precipitation method to obtain indium hydroxide, and then calcining it at high temperature to form indium oxide powder.

[0060] In conjunction with the second aspect, in some embodiments of the present invention, the specific surface area of ​​the indium oxide powder is 12 m². 2 / g~20m 2 / g.

[0061] The surface area within the above range exhibits high reactivity, excellent dispersibility and processability, and good sintering performance.

[0062] According to some embodiments of the present invention, in conjunction with a second aspect, in some embodiments of the present invention, the molding method includes cold isostatic pressing.

[0063] In conjunction with the second aspect, in some embodiments of the present invention, the holding time of the cold isostatic pressing is 30 to 40 minutes, and the pressure of the cold isostatic pressing is 200 to 250 MPa.

[0064] In conjunction with the second aspect, in some embodiments of the present invention, the sintering conditions include: heating the preform obtained after molding to 650-750°C at a heating rate of 1.5-3°C / min, holding at that temperature for 3-4 hours, then heating to 1320-1410°C at a heating rate of 0.5-1°C / min, holding at that temperature for 8-10 hours, and then cooling.

[0065] In conjunction with the second aspect, in some embodiments of the present invention, the sintering process further includes processing; the processing steps include placing the sintered target material in a lathe, polishing it with 400-grit and 800-grit grinding wheels respectively, fixing the resulting smooth target material to a copper backing plate using an indium layer, and completing the bonding process.

[0066] A third aspect of the present invention provides an application of the indium gallium zinc oxide target described above in reflective films, conductive films, and organic light-emitting diodes.

[0067] Example 1

[0068] This embodiment provides an IGZO target material and its preparation method. The raw materials for preparing the IGZO target material are composed of the following components by mass fraction:

[0069] 15 parts indium oxide powder, 29 parts gallium oxide powder, 54 parts zinc oxide powder, and 0.05 parts antimony pentoxide powder;

[0070] The steps for preparing IGZO targets are as follows:

[0071] S1, indium oxide powder, gallium oxide powder, zinc oxide powder, antimony pentoxide powder, and 0.4% of the total mass of the above powders as a dispersant are mixed and poured into a grinding mill to obtain a mixed slurry. The amount of pure water added is the same as the weight of the powder. The zirconium beads used have a particle size of 1 mm. 1.5% of the total mass of the above powders as a binder is added to the mixed slurry. After stirring for 1.5 hours, spray granulation can be performed to obtain mixed oxide powder. The powder is then filled into a 1m×0.5m×0.2m mold, sealed, and cold isostatically pressed for 30 minutes at a molding pressure of 220 MPa to obtain the preform.

[0072] S2. Place the preform flat in a sintering furnace, maintain a normal pressure atmosphere, and raise the temperature to 750℃ at a rate of 1.5℃ / min, hold for 3 hours to complete the degreasing process; then raise the temperature to 1410℃ at a rate of 0.5℃ / min, hold for 7 hours to complete the sintering process. Finally, cool to room temperature with the furnace to obtain the IGZO target material.

[0073] S3. Place the sintered target material in a lathe and polish it with 400-grit and 800-grit grinding wheels respectively. Fix the smooth target material to the copper backing plate with an indium layer to complete the bonding process.

[0074] Example 2

[0075] This embodiment provides an IGZO target and its preparation method. The raw materials for preparing the IGZO target are composed of the following components in mass fractions.

[0076] 30 parts indium oxide powder, 30 parts gallium oxide powder, 30 parts zinc oxide powder, and 0.03 parts antimony pentoxide powder;

[0077] S1. Indium oxide powder, gallium oxide powder, zinc oxide powder, and antimony pentoxide powder, along with 0.3% of the total mass of the powders as a dispersant, are mixed and poured into a grinding mill to obtain a mixed slurry. The amount of pure water added is the same as the weight of the powder. The zirconium beads used have a particle size of 1 mm. 1% of the total mass of the powders as a binder is added to the mixed slurry. After stirring for 1 hour, spray granulation can be performed to obtain mixed oxide powder. This powder is then filled into a 1m×0.5m×0.2m mold, sealed, and subjected to cold isostatic pressing for 30 minutes at a molding pressure of 200 MPa.

[0078] S2. Place the preform flat in the sintering furnace, maintain a normal pressure atmosphere, raise the temperature to 700℃ at a heating rate of 1.5℃ / min, hold for 3 hours to complete the degreasing process; then raise the temperature to 1390℃ at a heating rate of 0.5℃ / min, hold for 7 hours to complete the sintering process, and finally cool with the furnace to room temperature to obtain the IGZO target material.

[0079] S3. Place the sintered target material in a lathe and polish it with 400-grit and 800-grit grinding wheels respectively. Fix the smooth target material to the copper backing plate with an indium layer to complete the bonding process.

[0080] Example 3

[0081] This embodiment provides an IGZO target material and its preparation method. The raw materials for preparing the IGZO target material are composed of the following components in mass fractions.

[0082] 45 parts indium oxide powder, 32 parts gallium oxide powder, 25 parts zinc oxide powder, and 0.01 parts antimony pentoxide powder;

[0083] S1. Indium oxide powder, gallium oxide powder, zinc oxide powder, antimony pentoxide powder, and 0.5% of the total mass of the above powders as a dispersant are mixed and poured into a grinding mill to obtain a mixed slurry. The amount of pure water added is the same as the weight of the powder. The zirconium beads used have a particle size of 1 mm. 2% of the total mass of the above powders as a binder is added to the mixed slurry. After stirring for 1.5 hours, spray granulation can be performed to obtain mixed oxide powder. The powder is then filled into a 1m×0.5m×0.2m mold, sealed, and cold isostatically pressed for 30 minutes at a molding pressure of 250 MPa to obtain the preform.

[0084] S2. Place the preform flat in a sintering furnace, maintain a normal pressure atmosphere, raise the temperature to 650°C at a rate of 1.5°C / min, hold for 3 hours to complete the degreasing process; then raise the temperature to 1350°C at a rate of 0.5°C / min, hold for 7 hours to complete the sintering process, and finally cool with the furnace to room temperature to obtain the IGZO target material.

[0085] S3. Place the sintered target material in a lathe and polish it with 400-grit and 800-grit grinding wheels respectively. Fix the smooth target material to the copper backing plate with an indium layer to complete the bonding process.

[0086] Comparative Example 1

[0087] This comparative example provides an IGZO target material and its preparation method. The raw materials for preparing the IGZO target material are composed of the following components by mass fraction:

[0088] The product contains 15 parts indium oxide powder, 29 parts gallium oxide powder, and 54 parts zinc oxide powder, but does not contain antimony pentoxide powder.

[0089] The steps for preparing IGZO targets are as follows:

[0090] S1, indium oxide powder, gallium oxide powder, zinc oxide powder, and 0.4% of the total mass of the above powders as a dispersant are mixed and poured into a grinding mill to obtain a mixed slurry. The amount of pure water added is the same as the weight of the powder. The zirconium beads used have a particle size of 1 mm. 1.5% of the total mass of the above powders as a binder is added to the mixed slurry. After stirring for 1.5 hours, spray granulation can be performed to obtain mixed oxide powder. The powder is then filled into a 1m×0.5m×0.2m mold, sealed, and cold isostatically pressed for 30 minutes at a molding pressure of 220 MPa.

[0091] S2. Place the preform flat in the sintering furnace and maintain a normal pressure atmosphere. Increase the temperature to 750℃ at a rate of 1.5℃ / min and hold for 3 hours to complete the degreasing process; then increase the temperature to 1500℃ at a rate of 0.5℃ / min and hold for 7 hours to complete the sintering process. Finally, cool the furnace to room temperature to obtain the IGZO target material.

[0092] S3. Place the sintered target material in a lathe and polish it with 400-grit and 800-grit grinding wheels respectively. Fix the smooth target material to the copper backing plate with an indium layer to complete the bonding process.

[0093] Comparative Example 2

[0094] This comparative example provides an IGZO target material and its preparation method. The raw materials for preparing the IGZO target material consist of the following components by mass fraction:

[0095] 30 parts indium oxide powder, 30 parts gallium oxide powder, 30 parts zinc oxide powder, excluding antimony pentoxide powder;

[0096] The steps for preparing IGZO targets are as follows:

[0097] S1, indium oxide powder, gallium oxide powder, zinc oxide powder and 0.3% dispersant are mixed and poured into a grinding mill to obtain a mixed slurry. The amount of pure water added is the same as the weight of the powder. The zirconium beads used have a particle size of 1mm. 1% binder is added to the mixed slurry. After stirring for 1 hour, it can be spray granulated to obtain mixed oxide powder. It is then filled into a 1m×0.5m×0.2m mold, sealed, and cold isostatically pressed for 30 minutes at a molding pressure of 200MPa to obtain the preform.

[0098] S2. Place the preform flat in the sintering furnace and maintain a normal pressure atmosphere. Increase the temperature to 700℃ at a rate of 1.5℃ / min and hold for 3 hours to complete the degreasing process; then increase the temperature to 1480℃ at a rate of 0.5℃ / min and hold for 7 hours to complete the sintering process; finally, cool the furnace to room temperature to obtain the IGZO target material.

[0099] S3. Place the sintered target material in a lathe and polish it with 400-grit and 800-grit grinding wheels respectively. Fix the smooth target material to the copper backing plate with an indium layer to complete the bonding process.

[0100] Comparative Example 3

[0101] This comparative example provides an IGZO target material and its preparation method. The raw materials for preparing the IGZO target material are composed of the following components by mass fraction:

[0102] 45 parts indium oxide powder, 32 parts gallium oxide powder, and 25 parts zinc oxide powder, excluding antimony pentoxide powder;

[0103] The steps for preparing IGZO targets are as follows:

[0104] S1, indium oxide powder, gallium oxide powder, zinc oxide powder and 0.5% dispersant are mixed and poured into a grinding mill to obtain a mixed slurry. The amount of pure water added is the same as the weight of the powder. The zirconium beads used have a particle size of 1mm. 2% binder is added to the mixed slurry. After stirring for 1.5 hours, spray granulation can be performed to obtain mixed oxide powder. The powder is then filled into a 1m×0.5m×0.2m mold, sealed, and cold isostatically pressed for 30 minutes at a molding pressure of 250MPa to obtain the preform.

[0105] S2. Place the preform flat in the sintering furnace, maintain the atmospheric pressure atmosphere, raise the temperature to 650℃ at a heating rate of 1.5℃ / min, hold for 3 hours to complete the degreasing process; then raise the temperature to 1450℃ at a heating rate of 0.5℃ / min, hold for 7 hours to complete the sintering process, and finally cool with the furnace to room temperature to obtain the IGZO target material.

[0106] S3. Place the sintered target material in a lathe and polish it with 400-grit and 800-grit grinding wheels respectively. Fix the smooth target material to the copper backing plate with an indium layer to complete the bonding process.

[0107] Comparative Example 4

[0108] This comparative example provides an IGZO target and its preparation method. The only difference between this comparative example and Comparative Example 3 is the mass fraction of some of the raw material components: 45 parts of indium oxide powder, 32.01 parts of gallium oxide powder, and 25 parts of zinc oxide powder, excluding antimony pentoxide powder.

[0109] Comparative Example 5

[0110] This comparative example provides an IGZO target and its preparation method. The only difference between this comparative example and Example 1 is that bismuth pentoxide is used instead of antimony pentoxide, while the other conditions are the same.

[0111] Under the above conditions, excessive liquid phase generated from bismuth pentoxide may lead to poor densification of the target material at lower temperatures, thus affecting its structural stability. If there is too much liquid phase, the sintering process may become unstable, and it may even cause pores or bubbles to appear in the target material, affecting its mechanical and electrical properties.

[0112] Comparative Example 6

[0113] This comparative example provides an IGZO target and its preparation method. The only difference between this comparative example and Example 1 is that the amount of antimony pentoxide is 0.08 parts, and the other conditions are the same.

[0114] Under the above conditions, bismuth pentoxide causes uneven oxygen release, resulting in local over-oxidation of indium oxide and zinc oxide, while other areas may be insufficient, thus leading to material inhomogeneity. Especially during high-temperature sintering, excessive oxygen may promote the volatilization or reduction of components such as indium oxide and zinc oxide, resulting in material loss and affecting the volatilization rate of raw materials.

[0115] Test Example 1:

[0116] The relative density of the indium gallium zinc oxide targets prepared in the examples and comparative examples of this invention was determined by Archimedes' displacement method. The volatilization rate is the weight loss ratio before and after sintering, and its calculation formula is as follows:

[0117] Relative density = actual density / theoretical density × 100%;

[0118] Volatilization rate = (Weight before sintering - Weight after sintering / Weight before sintering) × 100%.

[0119] The mass ratios of In, Ga, and Zn elements before and after sintering were measured using XRF.

[0120] Table 1 Performance test data for the examples and comparative examples

[0121]

[0122]

[0123] As can be seen from the examples and comparative examples, the addition of antimony pentoxide can continuously decompose and release oxygen during the heating process, inhibiting the decomposition of indium oxide and zinc oxide. At the same time, this substance has a low melting point, providing a liquid phase for the sintering process. Lowering the sintering temperature of the target material can effectively reduce the sintering temperature of the target material and reduce the volatilization of In and Zn components in the target material. Without the introduction of additional oxygen, the sintering temperature of the target material and the volatilization rate of raw materials can be effectively reduced.

[0124] The present invention has been described in detail above with reference to the embodiments of the present invention. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. An indium gallium zinc oxide target, characterized in that, The preparation materials include the following ingredients in parts by weight: Indium oxide 15-45 parts; Gallium oxide 29-32 parts; 25-54 parts of zinc oxide powder; Antimony pentoxide 0.01~0.05 parts; The antimony pentoxide is in powder form with a particle size of 10-12 nm.

2. The indium gallium zinc oxide target according to claim 1, characterized in that, The raw materials for preparing the indium gallium zinc oxide target also include additives; the additives include dispersants and binders.

3. The indium gallium zinc oxide target according to claim 2, characterized in that, The preparation materials include the following ingredients in parts by weight: Indium oxide 15-45 parts; Gallium oxide 29-32 parts; 25-54 parts of zinc oxide powder; Antimony pentoxide 0.01~0.05 parts; Dispersant 0.3~0.5 parts; 1-2 parts adhesive.

4. A method for preparing an indium gallium zinc oxide target as described in any one of claims 1 to 3, characterized in that, Includes the following steps: S1. The indium oxide powder, gallium oxide powder, zinc oxide powder and antimony pentoxide powder are mixed and dispersed, and then spray-granulated to obtain mixed oxide powder; S2. The oxide powder is shaped and then sintered.

5. The method for preparing the indium gallium zinc oxide target according to claim 4, characterized in that, The method for preparing antimony pentoxide includes: mixing antimony trioxide and hydrogen peroxide and then refluxing the mixture.

6. The method for preparing the indium gallium zinc oxide target according to claim 4, characterized in that, The forming method includes cold isostatic pressing.

7. The method for preparing the indium gallium zinc oxide target according to claim 6, characterized in that, The holding time for cold isostatic pressing is 30-40 minutes, and the pressure for cold isostatic pressing is 200-250 MPa.

8. The method for preparing the indium gallium zinc oxide target according to claim 5, characterized in that, The sintering conditions include: heating the preform obtained after molding to 650-750°C at a heating rate of 1.5-3°C / min, holding it at that temperature for 3-4 hours, then heating it to 1320-1410°C at a heating rate of 0.5-1°C / min, holding it at that temperature for 8-10 hours, and then cooling it.

9. The application of the indium gallium zinc oxide target as described in any one of claims 1 to 3 in reflective films, conductive films, and organic light-emitting diodes.

Images