Magnetic field detection module, magnetic field sensing module, magnetic field detection module and magnetic sensor

Abstract

The application provides a magnetic field detection module, a magnetic field sensing module, a magnetic field detection module and a magnetic sensor. The magnetic field detection module comprises: first to fourth magnetic detection resistors connected in series, and an output node formed between the second magnetic detection resistor and the third magnetic detection resistor; in a first state, the first magnetic detection resistor and the fourth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; the second magnetic detection resistor and the third magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; in a second state, the first magnetic detection resistor and the fourth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; the second magnetic detection resistor and the third magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; in the same state, the direction of the first excitation magnetic field and the direction of the second excitation magnetic field are opposite.

Description

Technical Field

[0001] This invention relates to the field of magnetic field detection technology, and in particular to a magnetic field detection module, a magnetic field sensing module, a magnetic field detection module, and a magnetic sensor. Background Technology

[0002] Magnetic field detection technology has a wide range of applications, particularly in industry and automotive. It can be used to measure the rotation angle of objects such as gears or rotating shafts in mechanical devices, as well as the position and stroke of devices like valves. For the former, a magnetic encoder can be configured to generate a magnetic field, driving the object under test to rotate synchronously in response to the magnetic field, and a magnetic sensor can be used to measure the angle and speed of rotation. Currently, magnetic field-based rotation detection technologies include Hall effect devices (HAL), anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR), and tunneling magnetoresistive (TMR). Compared to GMR and TMR, Hall effect devices and anisotropic magnetoresistive (AMR) have mature technologies and applications, and offer lower production costs and better environmental tolerance. Anisotropic magnetoresistive (AMR) also has a magnetic field sensitivity that is about one to two orders of magnitude higher than Hall effect devices, while also supporting applications with faster response times. This makes this technology irreplaceable in various fields.

[0003] In existing technologies, the rotation of a magnet causes a corresponding rotation in the direction of the magnetic field sensed by the magnetic sensing chip, resulting in an output. Sensing devices constructed using anisotropic magnetoresistive (MMR) technology generate two sine and two cosine wave outputs when the magnetic field direction rotates 360 degrees. This means that anisotropic magnetoresistive magnetic field sensing chips can only measure 180-degree angular changes; the output curve from 0° to 180° is the same as the output curve from 180° to 360°, making it impossible to uniquely determine the magnetic field angle based on the output result. Therefore, improving the magnetic field angle measurement range is a pressing technical problem in this field. Summary of the Invention

[0004] The main objective of this invention is to provide a magnetic field detection module, a magnetic field sensing module, a magnetic field detection module, and a magnetic sensor, which aim to improve the measurement range of magnetic field angles.

[0005] To achieve the above objectives, the present invention proposes a magnetic field detection module, which includes:

[0006] A first magnetic sensing resistor, a second magnetic sensing resistor, a third magnetic sensing resistor, and a fourth magnetic sensing resistor are connected in series. The first current direction at the first magnetic sensing resistor is at an angle to the second current direction at the second magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; the third current direction at the third magnetic sensing resistor is at an angle to the fourth current direction at the fourth magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; and an output node is formed between the second magnetic sensing resistor and the third magnetic sensing resistor.

[0007] In the first state, a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor.

[0008] In the second state, a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor.

[0009] In the same state, the direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field.

[0010] The present invention also proposes a magnetic field sensing module, the magnetic field sensing module comprising:

[0011] A first magnetic sensing resistor, a second magnetic sensing resistor, a third magnetic sensing resistor, and a fourth magnetic sensing resistor are connected in series. The first current direction at the first magnetic sensing resistor is at an angle to the second current direction at the second magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; the third current direction at the third magnetic sensing resistor is at an angle to the fourth current direction at the fourth magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; a first output node is formed between the second magnetic sensing resistor and the third magnetic sensing resistor.

[0012] A fifth, sixth, seventh, and eighth magnetic sensing resistor are connected in series. The fifth current direction at the fifth magnetic sensing resistor is set at an angle to the sixth current direction at the sixth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; the seventh current direction at the seventh magnetic sensing resistor is set at an angle to the eighth current direction at the eighth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; a second output node is formed between the sixth and seventh magnetic sensing resistors.

[0013] The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor, the fourth magnetic detection resistor, and the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor are connected in parallel;

[0014] A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor.

[0015] The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field.

[0016] The present invention also proposes a magnetic field detection module, the magnetic field detection module comprising:

[0017] A first magnetic sensing resistor, a second magnetic sensing resistor, a third magnetic sensing resistor, and a fourth magnetic sensing resistor are connected in series. The first current direction at the first magnetic sensing resistor is at an angle to the second current direction at the second magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; the third current direction at the third magnetic sensing resistor is at an angle to the fourth current direction at the fourth magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; a first output node is formed between the second magnetic sensing resistor and the third magnetic sensing resistor.

[0018] A fifth, sixth, seventh, and eighth magnetic sensing resistor are connected in series. The fifth current direction at the fifth magnetic sensing resistor is set at an angle to the sixth current direction at the sixth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; the seventh current direction at the seventh magnetic sensing resistor is set at an angle to the eighth current direction at the eighth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; a second output node is formed between the sixth and seventh magnetic sensing resistors.

[0019] The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor, the fourth magnetic detection resistor, and the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor are connected in parallel;

[0020] A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor.

[0021] The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is opposite to the direction of the third excitation magnetic field;

[0022] The magnetic field detection module also includes:

[0023] A ninth, tenth, eleventh, and twelfth magnetic sensing resistor are connected in series. The ninth current direction at the ninth magnetic sensing resistor is set at an angle to the tenth current direction at the tenth magnetic sensing resistor; the tenth current direction at the tenth magnetic sensing resistor is set at an angle to the eleventh current direction at the eleventh magnetic sensing resistor; the eleventh current direction at the eleventh magnetic sensing resistor is set at an angle to the twelfth current direction at the twelfth magnetic sensing resistor; the tenth current direction at the tenth magnetic sensing resistor is set at an angle to the eleventh current direction at the eleventh magnetic sensing resistor; a third output node is formed between the tenth and eleventh magnetic sensing resistors.

[0024] A series of thirteenth, fourteenth, fifteenth, and sixteenth magnetic sensing resistors are connected. The thirteenth current direction at the thirteenth magnetic sensing resistor is set at an angle to the fourteenth current direction at the fourteenth magnetic sensing resistor; the fourteenth current direction at the fourteenth magnetic sensing resistor is set at an angle to the fifteenth current direction at the fifteenth magnetic sensing resistor; the fifteenth current direction at the fifteenth magnetic sensing resistor is set at an angle to the sixteenth current direction at the sixteenth magnetic sensing resistor; the fourteenth current direction at the fourteenth magnetic sensing resistor is set at an angle to the fifteenth current direction at the fifteenth magnetic sensing resistor; a fourth output node is formed between the fourteenth and fifteenth magnetic sensing resistors.

[0025] The ninth, tenth, eleventh, and twelfth magnetic detection resistors are connected in parallel with the thirteenth, fourteenth, fifteenth, and sixteenth magnetic detection resistors.

[0026] A signal magnetic field carrying a direction signal and a fifth excitation magnetic field are applied to the ninth and twelfth magnetic detection resistors; a signal magnetic field carrying a direction signal and a sixth excitation magnetic field are applied to the tenth and eleventh magnetic detection resistors; a signal magnetic field carrying a direction signal and a seventh excitation magnetic field are applied to the thirteenth and sixteenth magnetic detection resistors; a signal magnetic field carrying a direction signal and an eighth excitation magnetic field are applied to the fourteenth and fifteenth magnetic detection resistors.

[0027] The direction of the fifth excitation magnetic field is opposite to that of the sixth excitation magnetic field, the direction of the seventh excitation magnetic field is opposite to that of the eighth excitation magnetic field, and the direction of the fifth excitation magnetic field is opposite to that of the seventh excitation magnetic field; the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field.

[0028] The present invention also proposes a magnetic sensor, which includes the magnetic field detection module, the magnetic field sensing module, or the magnetic field detection module.

[0029] This invention proposes a magnetic field detection module, a magnetic field sensing module, a magnetic field detection module, and a magnetic sensor. The magnetic field detection module includes: a first magnetic detection resistor, a second magnetic detection resistor, a third magnetic detection resistor, and a fourth magnetic detection resistor connected in series. A first current direction at the first magnetic detection resistor is angled to a second current direction at the second magnetic detection resistor; a second current direction at the second magnetic detection resistor is angled to a third current direction at the third magnetic detection resistor; a third current direction at the third magnetic detection resistor is angled to a fourth current direction at the fourth magnetic detection resistor; and the second current direction at the second magnetic detection resistor is angled to the third current direction at the third magnetic detection resistor. An output node is formed between the second and third magnetic sensing resistors. In a first state, a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first and fourth magnetic sensing resistors; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second and third magnetic sensing resistors. In a second state, a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the first and fourth magnetic sensing resistors; a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the second and third magnetic sensing resistors. In the same state, the direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field. This invention constructs a Wheatstone half-bridge using the first to fourth magnetic sensing resistors. By setting the first to fourth current directions, the voltage value of the output node does not change with the direction of the signal magnetic field when only a signal magnetic field exists. Furthermore, by acquiring and plotting the ratio curve of the output node voltage value to the supply voltage, replacing the resistance curve of traditional anisotropic magnetoresistive devices, the situation where multiple sine waves are output and cannot be analyzed is avoided. Furthermore, to uniquely obtain the magnetic field angle when a ratio curve image (also known as a state curve) corresponds to multiple magnetic field angles, this invention applies excitation magnetic fields in different directions to the magnetic sensing resistor in a first state and a second state, obtaining the output node voltage values ​​in the first and second states. Since the first and second state curves do not coincide, a unique angle of the signal magnetic field can be obtained by corresponding to the output node voltage values ​​in the first and second states. Specifically, a second state curve is introduced to further determine the multiple magnetic field angles obtained from the first state curve. Based on the above concept and technical steps, this invention can highlight the differences between 0° and 360° of the anisotropic magnetoresistive magnetic field sensing chip through the Wheatstone half-bridge and the output node voltage values ​​in the two states, and correspond the output node voltage values ​​in the two states to the magnetic field angle of the signal magnetic field, thereby improving the measurement range of the magnetic field angle.More specifically, the magnetic field detection range of the anisotropic magnetoresistive magnetic field sensing chip is increased from 0° to 180° to 0° to 360°. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the structure of the first embodiment of the magnetic field detection module of the present invention;

[0032] Figure 2 This is a schematic diagram of the first structure of the second embodiment of the magnetic field detection module of the present invention;

[0033] Figure 3 This is a schematic diagram of the second structure of the magnetic field detection module of the present invention in a second embodiment;

[0034] Figure 4 This is a schematic diagram showing the relationship between the resistance value and the magnetic field angle in the first embodiment of the magnetic field detection module of the present invention;

[0035] Figure 5 This is a schematic diagram of the third structure of the second embodiment of the magnetic field detection module of the present invention;

[0036] Figure 6 This is a schematic diagram of the first curve of the magnetic field detection module of the present invention;

[0037] Figure 7 This is a schematic diagram showing the relationship between the resistance value and the magnetic field angle in the second embodiment of the magnetic field detection module of the present invention;

[0038] Figure 8 This is a schematic diagram of the second curve of the magnetic field detection module of the present invention;

[0039] Figure 9 This is a schematic diagram of the third curve of the magnetic field detection module of the present invention;

[0040] Figure 10 This is a schematic diagram of the fourth curve of the magnetic field detection module of the present invention;

[0041] Figure 11 This is a schematic diagram showing the relationship between the resistance value and the magnetic field angle in the third embodiment of the magnetic field detection module of the present invention;

[0042] Figure 12 This is a schematic diagram of the first structure of the third embodiment of the magnetic field detection module of the present invention;

[0043] Figure 13 This is a schematic diagram of the magnetic field detection module in the first state in the fourth embodiment of the magnetic field detection module of the present invention;

[0044] Figure 14 This is a schematic diagram of the magnetic field detection module in the second state in the fourth embodiment of the magnetic field detection module of the present invention;

[0045] Figure 15 This is a schematic diagram of the fifth curve of the magnetic field detection module of the present invention;

[0046] Figure 16 This is a schematic diagram of the magnetic field detection module in the second state in the fifth embodiment of the magnetic field detection module of the present invention;

[0047] Figure 17 This is a schematic diagram of the sixth curve of the magnetic field detection module of the present invention;

[0048] Figure 18 This is a schematic diagram of the seventh curve of the magnetic field detection module of the present invention;

[0049] Figure 19 This is a schematic diagram of the magnetic field detection module in the first state in the sixth embodiment of the magnetic field detection module of the present invention;

[0050] Figure 20 This is a schematic diagram of the eighth curve of the magnetic field detection module of the present invention;

[0051] Figure 21 This is a schematic diagram of the ninth state curve of the magnetic field detection module of the present invention;

[0052] Figure 22 This is a schematic diagram of the tenth state curve of the magnetic field detection module of the present invention;

[0053] Figure 23 This is a schematic diagram of the structure of an embodiment of the magnetic field sensing module of the present invention;

[0054] Figure 24 This is a schematic diagram of another embodiment of the magnetic field sensing module of the present invention;

[0055] Figure 25 This is a schematic diagram of another embodiment of the magnetic field sensing module of the present invention;

[0056] Figure 26 This is a schematic diagram of the first curve of the magnetic field sensing module of the present invention;

[0057] Figure 27 This is a schematic diagram of another embodiment of the magnetic field sensing module of the present invention;

[0058] Figure 28 This is a schematic diagram of the second curve of the magnetic field sensing module of the present invention;

[0059] Figure 29 This is a schematic diagram of another embodiment of the magnetic field sensing module of the present invention;

[0060] Figure 30 This is a schematic diagram of another embodiment of the magnetic field sensing module of the present invention;

[0061] Figure 31 This is a schematic diagram of the structure of an embodiment of the magnetic field detection module of the present invention;

[0062] Figure 32 This is a schematic diagram of another embodiment of the magnetic field sensing module of the present invention;

[0063] Figure 33 This is a schematic diagram of the first curve of the magnetic field sensing module of the present invention;

[0064] Figure 34 This is a schematic diagram of another embodiment of the magnetic field detection module of the present invention;

[0065] Figure 35 This is a schematic diagram of the second curve of the magnetic field detection module of the present invention.

[0066] Explanation of icon numbers:

[0067]

[0068] The objectives, features, and advantages of this invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0069] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0070] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0071] In this invention, unless otherwise explicitly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0072] Furthermore, in this invention, descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

[0073] This invention proposes a magnetic field detection module for sensing magnetic field information. The module outputs corresponding magnetic field information to characterize the detected magnetic field angle. The magnetic field detection module provided by this invention aims to provide richer magnetic field information and achieve a wider range of magnetic field angle measurements by improving its structure and the corresponding magnetic field application method.

[0074] like Figures 1 to 3 As shown, the magnetic field detection module includes:

[0075] A first magnetic sensing resistor 101, a second magnetic sensing resistor 102, a third magnetic sensing resistor 103, and a fourth magnetic sensing resistor 104 are connected in series. The first current direction at the first magnetic sensing resistor 101 is set at an angle to the second current direction at the second magnetic sensing resistor 102; the second current direction at the second magnetic sensing resistor 102 is set at an angle to the third current direction at the third magnetic sensing resistor 103; the third current direction at the third magnetic sensing resistor 103 is set at an angle to the fourth current direction at the fourth magnetic sensing resistor 104; the second current direction at the second magnetic sensing resistor 102 is set at an angle to the third current direction at the third magnetic sensing resistor 103; and an output node is formed between the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103.

[0076] It should be noted that the first magnetic sensing resistor 101, the second magnetic sensing resistor 102, the third magnetic sensing resistor 103, and the fourth magnetic sensing resistor 104 can each be composed of at least one magnetoresistive element (or magnetoresistive element), defined as a resistive element that is sensitive to magnetic fields and has anisotropic magnetoresistive effect. Of course, in other embodiments, they can be replaced with other components that are sensitive to changes in the magnetic field and have a clear magnetic field sensing direction.

[0077] The first magnetic sensing resistor 101 and the fourth magnetic sensing resistor 104 are connected in series. A first node P1 is formed at the first end of the first magnetic sensing resistor 101, and a second node P2 is formed at the second end of the fourth magnetic sensing resistor 104. One of the first node P1 and the second node P2 is used to connect to the power supply voltage, and the other is used to connect to the reference ground. The voltage value at the output node formed between the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103 is affected by the impedance values ​​of the first magnetic sensing resistor 101, the second magnetic sensing resistor 102, the third magnetic sensing resistor 103, and the fourth magnetic sensing resistor 104. If the first node P1 is connected to the power supply voltage and the second node P2 is connected to the reference ground, the formula for calculating the voltage value at the output node is: Where V is the voltage value at the output node. This is the supply voltage value. to The impedance values ​​of the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104 are respectively. It should be explained that the resistance values ​​of the magnetoresistive elements in the first to fourth magnetic sensing resistors 101 and 104 are affected by the magnetic field applied to them. The resistance value of each magnetoresistive resistor can be changed by altering the magnetic field applied to it, thereby changing the voltage value at the output node. Furthermore, due to the anisotropic magnetoresistive effect of the magnetoresistive element, it is sensitive to the relationship between the magnetic field and the current direction; the resistance of the magnetoresistive element changes with the angle between its magnetization and the current direction. The first magnetic sensing resistor 101 and the second magnetic sensing resistor 102 form a first series connection 11, and the third magnetic sensing resistor 103 and the fourth magnetic sensing resistor 104 form a second series connection 12.

[0078] Based on the above concept, this invention changes the resistance value of a magnetoresistive element by altering the angle between its magnetization and current direction, thereby changing the voltage value at the output node. Specifically, each magnetoresistive resistor is subjected to an excitation magnetic field and a signal magnetic field carrying a direction signal. The excitation magnetic field affects the angle between the magnetization and current direction of the magnetoresistive element. Since the directions of the first to fourth currents are angularly set, changing the excitation magnetic field changes the resistance value of the magnetoresistive element, and the resistance values ​​of each magnetoresistive resistor also change accordingly. The change in the direction of the excitation magnetic field changes the change in the angle between the magnetization and current direction, and the initial angle between the first and fourth current directions determines the initial angle between the magnetization and current direction. The initial angle is the angle between the signal magnetic field and the current direction; both (the change in the direction of the excitation magnetic field and the change from the first current direction to the fourth current direction) jointly determine the resistance values ​​of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 after the excitation magnetic field changes; since the first current direction to the fourth current direction is set at an angle, the magnitude and direction of the change in the resistance value of the first magnetic detection resistor 101 to the resistance value of the fourth magnetic detection resistor 104 are also different, and thus, after the excitation magnetic field changes, the change pattern of the voltage value at the output node is different from that before the excitation magnetic field changes.

[0079] It is easy to understand that after determining the specific nodes in the first node P1 and the second node P2 where the supply voltage is connected, and the angle between the first current direction and the fourth current direction, it can be determined that the first current direction to the fourth current direction is fixed. At this time, for the magnetoresistive element, the initial angle between the magnetization intensity and its current direction is determined by the signal magnetic field carrying the direction signal. Therefore, the curve of the voltage value at the output node changing with the direction of the signal magnetic field before and after the change of the excitation magnetic field can be determined first. From the above, it can be inferred that due to the change of the excitation magnetic field, the change value of the angle between the magnetization intensity and its current direction will change; for example, the change value changes from a positive value to a negative value, or from a negative value to a positive value. Since the first current direction to the fourth current direction remains unchanged, that is, when the direction of the signal magnetic field remains unchanged, the initial angle between the magnetization intensity and its current direction remains unchanged. Obtain the curve of the voltage value at the output node and the direction angle of the signal magnetic field before and after the change of the excitation magnetic field.

[0080] It is easy to determine that the curve before and after the change of the excitation magnetic field are inconsistent. By adjusting the direction change of the excitation magnetic field and the setting angle between the first and fourth current directions, the curves before and after the change of the excitation magnetic field can be adjusted. Thus, without changing the signal magnetic field (specifically, without changing the magnetic field direction angle), the magnetic field direction angle of the signal magnetic field can be uniquely determined by the first output node voltage value corresponding to the magnetic field direction angle in the curve before the change of the excitation magnetic field and the second output node voltage value corresponding to the magnetic field direction angle in the curve after the change of the excitation magnetic field. This invention can determine the 360-degree signal magnetic field direction using the first and second output node voltage values ​​before and after the change of the excitation magnetic field.

[0081] In the first embodiment of the present invention, a feasible scheme for setting the angle between the first current direction and the fourth current direction is proposed. For example... Figure 1 As shown, the first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction.

[0082] It should be noted that since the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104 are connected in series, the first current value to the fourth current value are equal; the impedance value of the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104 is determined by the excitation magnetic field, the signal magnetic field, and the corresponding current direction. In practical applications, the magnetic field detection module, as part of the magnetic field sensor, measures the direction of the signal magnetic field; specifically, the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104 are encapsulated in the magnetic field detection module, and the magnetic field strength and direction of the signal magnetic field at each magnetic sensing resistor can be considered the same. As explained above, the voltage value at the output node is related to the change in the direction of the excitation magnetic field (regardless of whether the signal magnetic field changes), but it should be pointed out that when the signal magnetic field changes, the voltage value at the output node also changes accordingly because the initial angle between the magnetization intensity and its current direction changes. It should be understood that in the curve between the voltage value at the output node and the direction angle of the signal magnetic field, the voltage value at the output node is related not only to the excitation magnetic field but also to the angle of the signal magnetic field. The signal magnetic field needs to work in conjunction with the current direction to affect the voltage value at the output node. This embodiment aims to reduce or eliminate the influence of the direction angle of the signal magnetic field on the voltage value change at the output node by providing the angular relationship between the first current direction and the fourth current direction.

[0083] The first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction. This can be viewed as rotating the first current direction three times in a certain direction, each time by 90 degrees, to form the second, third, and fourth current directions respectively. In a feasible example, the first current direction is consistent with the first direction, the second current direction is consistent with the second direction, the third current direction is consistent with the opposite direction of the first direction, and the fourth current direction is consistent with the opposite direction of the second direction. The first direction is perpendicular to the second direction.

[0084] like Figure 4 As shown, when the angle between the direction of the signal magnetic field and the direction of the first current is... At that time, the angle between the direction of the signal magnetic field and the direction of the second current is . The angle between the direction of the signal magnetic field and the direction of the third current is The angle between the direction of the signal magnetic field and the direction of the fourth current is At this point, the resistance value of the first magnetic detection resistor 101 is calculated as follows: , in, The resistance value of the first magnetic detection resistor 101, This is the resistance value at the first magnetic detection resistor 101 when the direction of the signal magnetic field is parallel to the direction of the current. It is the resistance value at the first magnetic detection resistor 101 when the direction of the signal magnetic field is perpendicular to the direction of the current.

[0085] The formula for calculating the resistance of the second magnetic detection resistor 102 is: , in, The resistance value of the second magnetic detection resistor 102, This is the resistance value at the second magnetic detection resistor 102 when the direction of the signal magnetic field is parallel to the direction of the current. This is the resistance value at the second magnetic detection resistor 102 when the direction of the signal magnetic field is perpendicular to the direction of the current.

[0086] The formula for calculating the resistance of the third magnetic detection resistor 103 is: , in, The resistance value of the third magnetic detection resistor 103. This is the resistance value at the third magnetic detection resistor 103 when the direction of the signal magnetic field is parallel to the direction of the current. This is the resistance value at the third magnetic detection resistor 103 when the direction of the signal magnetic field is perpendicular to the direction of the current.

[0087] The formula for calculating the resistance of the fourth magnetic detection resistor 104 is: , in, The resistance value of the fourth magnetic detection resistor 104, This is the resistance value at the fourth magnetic detection resistor 104 when the direction of the signal magnetic field is parallel to the direction of the current. This is the resistance value at the fourth magnetic detection resistor 104 when the direction of the signal magnetic field is perpendicular to the direction of the current.

[0088] From the above, we can derive the formula for calculating the voltage value at the output node as follows: Combining the calculation formulas for the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104, the voltage value at the output node is obtained as follows:

[0089] When the resistance values ​​of the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104 are the same when the signal magnetic field direction is parallel to the current direction, and the resistance values ​​are the same when the signal magnetic field direction is perpendicular to the current direction, the voltage value at the output node is: That is, the output node voltage value remains unchanged when the direction of the signal magnetic field changes. In the solution proposed in the first embodiment of the present invention, by setting the angle between the first current direction and the fourth current direction, the influence of the direction angle of the signal magnetic field on the voltage value change at the output node is reduced or eliminated.

[0090] It should be noted that this invention uses the first embodiment as an example to provide an angular relationship between current directions, thereby eliminating the influence of the signal magnetic field direction angle on the voltage change at the output node; it does not mean that only the angular relationship in the first embodiment can reduce or eliminate the influence of the signal magnetic field direction angle on the voltage change at the output node. Other angular relationships between the first and fourth current directions can be found through experimental methods or theoretical simulation calculations to reduce the influence of the signal magnetic field direction angle on the voltage change at the output node.

[0091] like Figure 5As shown, in the second embodiment, the first magnetic sensing resistor 101 includes a first magnetoresistive element RA1, a second magnetoresistive element RA2, and a third magnetoresistive element RA3 connected in series. In a feasible embodiment, the first magnetoresistive element RA1, the second magnetoresistive element RA2, and the third magnetoresistive element RA3 have the same magnetoresistive coefficient and / or magnetic sensitivity direction. The first magnetoresistive element RA1 extends from its first end to its second end along a first direction; the second end of the first magnetoresistive element RA1 is coupled to the first end of the second magnetoresistive element RA2, and the second magnetoresistive element RA2 extends from its first end to its second end in the opposite direction of the first direction; the second end of the second magnetoresistive element RA2 is coupled to the first end of the third magnetoresistive element RA3; the third magnetoresistive element RA3 extends from its first end to its second end along the first direction; wherein, the first direction refers to... Figures 1 to 5 The X-direction and its opposite direction.

[0092] When current is applied to the first magnetic sensing resistor 101, the location of the current input and the extension direction of the magnetoresistive element determine the current direction at the corresponding magnetoresistive element. For example, when current is applied to the first end of the first magnetoresistive element RA1, the first magnetoresistive element RA1, the second magnetoresistive element RA2, and the third magnetoresistive element RA3 each form their own current direction according to the aforementioned extension direction. In summary, a first current direction consistent with the first direction will be formed at the first magnetic sensing resistor 101.

[0093] The second magnetic sensing resistor 102 includes a fourth magnetoresistive element RB1, a fifth magnetoresistive element RB2, and a sixth magnetoresistive element RB3 connected in series. In one feasible embodiment, the fourth magnetoresistive element RB1, the fifth magnetoresistive element RB2, and the sixth magnetoresistive element RB3 have the same magnetoresistive coefficient and / or magnetic sensitivity direction. The fourth magnetoresistive element RB1 extends from its first end to its second end along a second direction; the second end of the fourth magnetoresistive element RB1 is coupled to the first end of the fifth magnetoresistive element RB2, and the fifth magnetoresistive element RB2 extends from its first end to its second end in the opposite direction of the second direction; the second end of the fifth magnetoresistive element RB2 is coupled to the first end of the sixth magnetoresistive element RB3; the sixth magnetoresistive element RB3 extends from its first end to its second end along the second direction; wherein, the second direction refers to... Figures 1 to 5 The Y-direction and its opposite direction.

[0094] When current is applied to the second magnetic sensing resistor 102, the location of the current input and the extension direction of the magnetoresistive element determine the current direction at the corresponding magnetoresistive element. For example, when current is applied to the first end of the fourth magnetoresistive element RB1, the fourth magnetoresistive element RB1, the fifth magnetoresistive element RB2, and the sixth magnetoresistive element RB3 each form their own current direction according to the aforementioned extension direction. In summary, a second current direction consistent with the second direction will be formed at the second magnetic sensing resistor 102.

[0095] The third magnetic sensing resistor 103 includes a seventh magnetoresistive element RC1, an eighth magnetoresistive element RC2, and a ninth magnetoresistive element RC3 connected in series. In one feasible embodiment, the seventh magnetoresistive element RC1, the eighth magnetoresistive element RC2, and the ninth magnetoresistive element RC3 have the same magnetoresistive coefficient and / or magnetic sensitivity direction. The seventh magnetoresistive element RC1 extends from its first end to its second end in the opposite direction to the first direction; the second end of the seventh magnetoresistive element RC1 is coupled to the first end of the eighth magnetoresistive element RC2, which extends from its first end to its second end in the first direction; the second end of the eighth magnetoresistive element RC2 is coupled to the first end of the ninth magnetoresistive element RC3; the ninth magnetoresistive element RC3 extends from its first end to its second end in the opposite direction to the first direction; wherein, the second direction refers to... Figures 1 to 5 The Y-direction and its opposite direction.

[0096] When current is applied to the third magnetic sensing resistor 103, the location of the current input and the extension direction of the magnetoresistive element determine the current direction at the corresponding magnetoresistive element. For example, when current is applied to the first end of the seventh magnetoresistive element RC1, the seventh magnetoresistive element RC1, the eighth magnetoresistive element RC2, and the ninth magnetoresistive element RC3 each form their own current direction according to the aforementioned extension direction. In summary, a third current direction, which is opposite to the first direction, will be formed at the third magnetic sensing resistor 103.

[0097] The fourth magnetic sensing resistor 104 includes a tenth magnetoresistive element RD1, an eleventh magnetoresistive element RD2, and a twelfth magnetoresistive element RD3 connected in series. In one feasible embodiment, the tenth magnetoresistive element RD1, the eleventh magnetoresistive element RD2, and the twelfth magnetoresistive element RD3 have the same magnetoresistive coefficient and / or magnetic sensitivity direction. The tenth magnetoresistive element RD1 extends from its first end to its second end in the opposite direction of a second direction; the second end of the tenth magnetoresistive element RD1 is coupled to the first end of the eleventh magnetoresistive element RD2, and the eleventh magnetoresistive element RD2 extends from its first end to its second end in the second direction; the second end of the eleventh magnetoresistive element RD2 is coupled to the first end of the twelfth magnetoresistive element RD3; the twelfth magnetoresistive element RD3 extends from its first end to its second end in the opposite direction of the second direction; wherein, the second direction refers to... Figures 1 to 5 The Y-direction and its opposite direction.

[0098] When current is applied to the fourth magnetic sensing resistor 104, the location of the current input and the extension direction of the magnetoresistive element determine the current direction at the corresponding magnetoresistive element. For example, when current is applied to the first end of the tenth magnetoresistive element RD1, the tenth magnetoresistive element RD1, the eleventh magnetoresistive element RD2, and the twelfth magnetoresistive element RD3 each form their own current direction according to the aforementioned extension direction. In summary, a fourth current direction, which is opposite to the second direction, will be formed at the fourth magnetic sensing resistor 104.

[0099] It should be noted that the second embodiment of the present invention provides a specific configuration of the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104. Divided by current direction, the current direction of the first magnetoresistive element RA1, the third magnetoresistive element RA3, and the eighth magnetoresistive element RC2 is the X direction; the current direction of the second magnetoresistive element RA2, the seventh magnetoresistive element RC1, and the ninth magnetoresistive element RC3 is the opposite direction of the X direction; the current direction of the fourth magnetoresistive element RB1, the sixth magnetoresistive element RB3, and the eleventh magnetoresistive element RD2 is the Y direction; and the current direction of the fifth magnetoresistive element RB2, the tenth magnetoresistive element RD1, and the eleventh magnetoresistive element RD2 is the opposite direction of the Y direction. Similarly, when the angle between the direction of the signal magnetic field and the X direction is... At that time, the angle between the direction of the signal magnetic field and the Y direction is... The angle between the direction of the signal magnetic field and the opposite direction of the X-direction is... The angle between the direction of the signal magnetic field and the opposite direction of the Y direction is... .

[0100] When the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 all have the same magnetoresistive effect coefficient, the relationship between the resistance value of the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 and the angle of the signal magnetic field applied to them is as follows:

[0101] A magnetoresistive element in which the current direction is the same as the X-direction. , ,in, The resistance value of the first magnetoresistive element RA1 is... The resistance value of the third magnetoresistive element RA3 is... The resistance value of the eighth magnetoresistive element RC2 is... This is the resistance value at the magnetoresistive element when the direction of the signal magnetic field is parallel to the direction of the current. This is the resistance value at the magnetoresistive element when the direction of the signal magnetic field is perpendicular to the direction of the current.

[0102] A magnetoresistive element in which the current direction is opposite to the X-direction. , ,in, The resistance value of the seventh magnetoresistive element RC1 is... The resistance value of the ninth magnetoresistive element RC3 is... The resistance value of the second magnetoresistive element RA2.

[0103] A magnetoresistive element in which the current direction is the same as the Y direction. , ,in, The resistance value of the fourth magnetoresistive element RB1 is... The resistance value of the sixth magnetoresistive element RB3 is... This is the resistance value of the eleventh magnetoresistive element RD2.

[0104] A magnetoresistive element in which the current direction is opposite to the Y direction. , ,in, The resistance value of the tenth magnetoresistive element RD1 is... The resistance value of the twelfth magnetoresistive element RD3 is... This is the resistance value of the fifth magnetoresistive element RB2.

[0105] Since the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 are connected in series, the voltage value at the output node is .

[0106] Furthermore, based on the above equation and the current direction of the magnetoresistive element, the voltage value at the output node is... The following conditions must be met: the magnetic field detection module is divided into two parts using the output node, the first node P1, and the second node P2: one from the first node P1 to the output node, and the other from the second node P2 to the output node. It is sufficient that the resistance values ​​in both parts are the same to ensure that the voltage at the output node is [value missing]. .

[0107] Based on the above concept, the present invention proposes the following current direction configuration:

[0108] First, the direction of the first current is the same as the X direction; the direction of the second current is the same as the Y direction; the direction of the third current is the same as the X direction but opposite to it; and the direction of the fourth current is the same as the Y direction but opposite to it.

[0109] II. The direction of the first current is the same as the X direction, the direction of the second current is the same as the Y direction, the direction of the third current is the same as the opposite direction of the Y direction, and the direction of the fourth current is the same as the opposite direction of the X direction.

[0110] Third, the direction of the first current is the same as the X direction, the direction of the second current is the same as the opposite direction of the Y direction, the direction of the third current is the same as the opposite direction of the X direction, and the direction of the fourth current is the same as the Y direction.

[0111] IV. The direction of the first current is the same as the X direction, the direction of the second current is the same as the opposite direction of the Y direction, the direction of the third current is the same as the Y direction, and the direction of the fourth current is the same as the opposite direction of the X direction.

[0112] 5. The direction of the first current is the same as the X direction but opposite to it; the direction of the second current is the same as the Y direction; the direction of the third current is the same as the X direction; and the direction of the fourth current is the same as the Y direction but opposite to it.

[0113] VI. The direction of the first current is the same as the X direction but opposite to it; the direction of the second current is the same as the Y direction; the direction of the third current is the same as the Y direction; and the direction of the fourth current is the same as the X direction but opposite to it.

[0114] VII. The direction of the first current is the same as the X direction but opposite to it; the direction of the second current is the same as the Y direction but opposite to it; the direction of the third current is the same as the X direction; and the direction of the fourth current is the same as the Y direction.

[0115] 8. The direction of the first current is the same as the X direction but opposite to it; the direction of the second current is the same as the Y direction but opposite to it; the direction of the third current is the same as the Y direction; and the direction of the fourth current is the same as the X direction.

[0116] It should be noted that the arrangement and position of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are adjusted accordingly based on the first current direction to the fourth current direction.

[0117] Furthermore, based on the above concept, when the first magnetoresistive element RA1, the second magnetoresistive element RA2, the third magnetoresistive element RA3, the seventh magnetoresistive element RC1, the eighth magnetoresistive element RC2, and the ninth magnetoresistive element RC3 have the same magnetoresistive effect coefficient, and the fourth magnetoresistive element RB1, the fifth magnetoresistive element RB2, the sixth magnetoresistive element RB3, the tenth magnetoresistive element RD1, the eleventh magnetoresistive element RD2, and the twelfth magnetoresistive element RD3 have the same magnetoresistive effect coefficient, it can be determined that under the current direction relationship described in the second embodiment, the voltage value at the output node is... .

[0118] In the first state, a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor 102 and the third magnetic detection resistor 103; in a feasible example, such as Figure 2 As shown.

[0119] In the second state, a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104; a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the second magnetic detection resistor 102 and the third magnetic detection resistor 103; in a feasible example, such as Figure 3 As shown.

[0120] In the same state, the direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field.

[0121] It should be noted that the biggest difference between the first and second states for a magnetically sensing resistor lies in the excitation magnetic field. As easily understood, each magnetically sensing resistor is supplied with a signal magnetic field carrying directional information, which forms a signal magnetization direction at that resistor. Additionally, each magnetically sensing resistor is supplied with an excitation magnetic field, which deflects the signal magnetization direction to form an excitation magnetization direction. The angle between the excitation magnetization direction and the current direction of the magnetically sensing resistor affects its resistance value. For example, in the first state, a signal magnetic field carrying directional information is applied to the first magnetically sensing resistor 101, forming a signal magnetization direction at that resistor. A first excitation magnetic field is also applied to the first magnetically sensing resistor 101, which deflects the signal magnetization direction to form a first excitation magnetization direction.

[0122] It is particularly important to note that the excitation magnetic field causes a deflection in the signal magnetization direction, forming the excitation magnetization direction, which follows the parallelogram law of vector composition. Both the direction and strength of the excitation magnetic field can affect the angle between the excitation magnetization direction and the current direction. This embodiment of the invention avoids interference from changes in magnetic field strength with the excitation magnetization direction by fixing the magnetic field strength. Furthermore, it should be noted that this embodiment of the invention obtains the voltage values ​​of the output node in the first state and the second state by rapidly switching the direction of the excitation magnetic field. During the state switching process, the signal magnetic field can be considered constant.

[0123] like Figure 6 As shown, when the signal magnetic field is a magnetic field with a fixed strength but continuously changing direction, if no excitation magnetic field is applied, the magnetic field detection module will output as shown in the standard state curve state0. It should be noted that the state0 curve is affected by the angle between the first and fourth current directions, the reason for which has been explained above. Specifically, in a feasible example, the voltage value at the output node of the magnetic field detection module is... ,like Figure 6 As shown.

[0124] Furthermore, when no excitation magnetic field is applied, the angle between the signal magnetization direction and the current direction is different in each magnetoresistive element because the current directions through the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 are different. For example... Figure 7 As shown, Figure 7 This demonstrates that when the direction angle of the signal magnetic field is θ, the magnetic field... The resistance value of a resistive element.

[0125] If an excitation magnetic field is applied corresponding to the first state, the magnetic field detection module will output a curve similar to state1 of the first state. Figure 8 As shown, compared to the standard state curve state0, the curve formed by the output data of the magnetic field detection module is distorted under the influence of the excitation magnetic field. It is easy to understand that the output data of the magnetic field detection module is essentially the voltage value of the output node. The distortion of the first state curve state1 compared to the standard state curve state0 is essentially because the resistance values ​​of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 change to different degrees when the direction angle of the signal magnetic field changes. Due to the different degrees of resistance change among the magnetic detection resistors, a distortion similar to the first state curve state1 is formed. Specifically, when the magnetic field detection module includes the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3, the resistance values ​​of each magnetoresistive element change to different degrees when the direction angle of the signal magnetic field changes, causing the curve distortion.

[0126] Correspondingly, if an excitation magnetic field is applied to the second state, the output of the second state curve presented by the magnetic field detection module will also deform under the action of the excitation magnetic field, forming a deformation similar to the second state curve state2. It is easy to understand that the magnetic fields applied to each magnetic detection resistor in the first state are different from those applied to each magnetoresistor in the second state. Compared to the standard state curve, at the same signal magnetic field angle, the deformation direction of the first state curve is different from that of the second state curve. For example... Figure 9 As shown.

[0127] It is easy to understand that the first state curve and the second state curve do not coincide. For the same signal magnetic field angle, the corresponding value of the first state curve is different from the corresponding value of the second state curve. The first state curve and the second state curve differ in at least one dimension (e.g., amplitude). This invention uniquely determines the angle of the signal magnetic field by obtaining the first voltage value and the second voltage value corresponding to the signal magnetic field angle in the first state and the second state curve in the second state.

[0128] It should be noted that this invention does not limit whether the first excitation magnetic field in the first state and the second state are the same / identical, nor does it limit whether the second excitation magnetic field in the first state and the second state are the same / identical. That is, the first excitation magnetic field in the first state and the second state can be the same or different; correspondingly, the second excitation magnetic field in the first state and the second state can be the same or different. The following are two cases:

[0129] 1. The direction of the first excitation magnetic field changes under different states. For example, in the first state, the direction of the first excitation magnetic field is inconsistent with that in the second state. Correspondingly, since the direction of the second excitation magnetic field is opposite to that of the first excitation magnetic field, it is easy to see that the direction of the second excitation magnetic field in the first state is inconsistent with that in the second state. Furthermore, it should be specifically pointed out that the second excitation magnetic field applied at the first magnetic sensing resistor 101 and the fourth magnetic sensing resistor 104 in the second state is different from the second excitation magnetic field applied at the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103 in the first state. Correspondingly, the first excitation magnetic field applied at the first magnetic sensing resistor 101 and the fourth magnetic sensing resistor 104 in the first state is different from the first excitation magnetic field applied at the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103 in the second state. That is, the first excitation magnetic field in the first state and the first excitation magnetic field in the second state cannot be considered equivalent, and the second excitation magnetic field in the first state and the second excitation magnetic field in the second state cannot be considered equivalent.

[0130] As described above, the excitation magnetic field deflects the magnetization direction of the signal, thus forming the excitation magnetization direction. The angle between the excitation magnetization direction and the current direction of the magnetic sensing resistor affects the resistance value of the magnetic sensing resistor. The resistance value of the magnetic sensing resistor, in turn, affects the voltage value of the output node. This invention can determine the magnetic field direction angle of the signal magnetic field by combining the voltage values ​​of the output node in the first state and the voltage values ​​in the second state, along with the first state curve corresponding to the first state and the second state curve corresponding to the second state.

[0131] II. The first excitation magnetic field is the same in both the first and second states. Since the directions of the first and second excitation magnetic fields are opposite, the second excitation magnetic field is the same in both states. Compared to the first state, only the excitation magnetic field at the first to fourth magnetic sensing resistors 104 changes in the second state; specifically, the direction of the excitation magnetic field reverses. The voltage value at the output node is the voltage value obtained by dividing the supply voltage using the voltage divider circuit composed of the first to fourth magnetic sensing resistors 104. When the direction of the excitation magnetic field at the first to fourth magnetic sensing resistors 104 reverses, the state curve of the voltage value at the output node changing with the angle of the signal magnetic field, compared to the state curve before the change in the direction of the excitation magnetic field, shows the voltage value... Symmetry; such as Figure 10 As shown, the image is symmetrical about the vertical axis 0.5.

[0132] For the magnetic field detection module, an excitation magnetic field is first applied to the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 to enter a first state, and the voltage value of the output node in the first state is obtained; then, an excitation magnetic field is applied to the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 to enter a second state, and the voltage value of the output node in the second state is obtained. Although the two state curves before and after the change of the excitation magnetic field direction have different voltage values... Symmetrical; however, after marking the voltage value of the first obtained output node as the voltage value in the first state, the angle value of the signal magnetic field can be uniquely determined based on the voltage values ​​of the two output nodes and the order in which the output node voltage values ​​are obtained.

[0133] The angle value of the signal magnetic field is uniquely determined based on the voltage values ​​of the two output nodes and the order in which these voltage values ​​are acquired. It should be noted that this method of determining the angle value of the signal magnetic field can also be applied to situations where the direction of the first excitation magnetic field changes under different conditions.

[0134] It is easy to understand that although this invention does not limit whether the first excitation magnetic fields in the first state and the second state are the same / identical, in order to subsequently determine the angle value of the signal magnetic field based on the output node voltage value in the first state and the second state, the following two methods can be used: 1. The angle difference between the two first excitation magnetic fields in the first state and the second state is determined in advance by the R&D personnel. 2. The first state curve and the second state curve of the output node under various excitation magnetic field angles are stored in advance. After obtaining the voltage value of the output node in the first state, the first state curve corresponding to the direction of the excitation magnetic field in the first state is called. After obtaining the voltage value of the output node in the second state, the second state curve corresponding to the direction of the excitation magnetic field in the second state is called. Then, the angle value of the signal magnetic field is obtained by combining the voltage values ​​of the output node in the two states with the first state curve and the second state curve.

[0135] In the magnetic field detection module provided by this invention, an excitation magnetic field can be superimposed while a signal magnetic field is applied, thereby causing the magnetization direction formed by the magnetic detection resistor under the action of the signal magnetic field to be deflected. The resistance values ​​between different magnetic detection resistors will be different, and the output of the magnetic field detection module will be deformed corresponding to different angle ranges. Thus, the magnetic field detection module can also have sensitivity to other magnetic field angles outside the original magnetic field angle sensing range, so as to support the sensing of a larger magnetic field angle sensing range and improve the richness of the magnetic field information content that can be obtained.

[0136] This type of excitation magnetic field can be formed using a magnetic field generating module. If different excitation magnetic fields need to be applied to different magnetoresistors, different magnetic field generating modules can be set at different detection resistors. The magnetic field generating module can be an independent component or a conductor segment of a structure such as a coil.

[0137] In the third embodiment of the present invention, a first magnetic field generating module 201 is provided at the first magnetic detection resistor 101, a second magnetic field generating module 202 is provided at the second magnetic detection resistor 102, a third magnetic field generating module 203 is provided at the third magnetic detection resistor 103, and a fourth magnetic field generating module 204 is provided at the fourth magnetic detection resistor 104; each magnetic field generating module is used to generate a first excitation magnetic field or a second excitation magnetic field corresponding to its respective magnetic detection resistor.

[0138] Specifically, such as Figure 2 , Figure 3 and Figure 11As shown, in the first state, the first magnetic field generating module 201 generates a first excitation magnetic field at the first magnetic detection resistor 101, and the fourth magnetic field generating module 204 generates a first excitation magnetic field at the fourth magnetic detection resistor 104. The first excitation magnetic field causes the signal magnetization direction of the signal magnetic field at the first magnetic detection resistor 101 to change by a first angle. The deflection of the first excitation magnetic field causes the signal magnetic field to change at a fourth angle in the signal magnetization direction at the fourth magnetic detection resistor 104. The deflection; both the first and fourth magnetic detection resistors have the same first excitation magnetic field and signal magnetic field. It is easy to understand that the first angle... and the fourth angle Equal. The second magnetic field generating module 202 generates a second excitation magnetic field at the second magnetic detection resistor 102, and the third magnetic field generating module 203 generates a second excitation magnetic field at the third magnetic detection resistor 103. The second excitation magnetic field causes the signal magnetization direction of the signal magnetic field at the second magnetic detection resistor 102 to change by a second angle. The deflection of the second excitation magnetic field causes the signal magnetic field to change at a third angle in the signal magnetization direction at the third magnetic detection resistor 103. The deflection; both the second and third magnetic detection resistors have the same second excitation magnetic field and signal magnetic field, the second angle and the third angle equal.

[0139] It's easy to understand that, based on the fact that the magnetic field strength and direction of the signal magnetic field remain unchanged, and the magnetic field strength of the excitation magnetic field also remains unchanged, we can use the vector addition rule (the angular relationship of a parallelogram) to know that the first and second angles are complementary angles. Only when the direction of the excitation magnetic field is perpendicular to the direction of the signal magnetic field are the first and second angles opposite in number, i.e. .

[0140] In the second state, the first magnetic field generating module 201 generates a second excitation magnetic field at the first magnetic detection resistor 101, the fourth magnetic field generating module 204 generates a second excitation magnetic field at the fourth magnetic detection resistor 104, the second magnetic field generating module 202 generates a first excitation magnetic field at the second magnetic detection resistor 102, and the third magnetic field generating module 203 generates a first excitation magnetic field at the third magnetic detection resistor 103. It is important to note that because the directions of the first and second excitation magnetic fields are opposite, the rotation direction of the signal magnetization direction changes after the excitation magnetic field is replaced, becoming the opposite direction to its original direction. Understandably, because the rotation direction of the signal magnetization direction at the magnetic detection resistor changes before and after the excitation magnetic field is replaced, the state curve constructed by the voltage values ​​of the output nodes in the first state and the state curve constructed by the voltage values ​​of the output nodes in the second state do not coincide. Therefore, the angle value of the signal magnetic field can be uniquely determined based on the voltage values ​​of the output nodes in the first and second states, and the order in which the voltage values ​​of the output nodes are acquired.

[0141] It should be noted that this invention relies on the voltage values ​​of the output nodes in the first state and the second state to uniquely determine the angle value of the signal magnetic field. To achieve this goal, the invention requires the following restriction: the first excitation magnetic field in the first state cannot be in the same direction as the second excitation magnetic field in the second state. This is because, regardless of the first or second state, the directions of the first and second excitation magnetic fields in the same state are opposite. This restriction can be further modified to: the direction of the first excitation magnetic field in the first state cannot be opposite to the direction of the first excitation magnetic field in the second state. It is easy to understand that if the first excitation magnetic field in the first state and the second excitation magnetic field in the second state are in the same direction, and the magnetic field strength of the excitation magnetic field remains unchanged, the deflection angle of the signal magnetization direction of the magnetic detection resistor in the first state is the same as that in the second state. That is, the resistance value of each magnetic detection resistor in the first state is equal to the resistance value in the second state. In this case, the curves of the first and second states coincide, making it impossible to determine the angle of the signal magnetic field using the values ​​on the first and second state curves respectively, based on the same signal magnetic field angle.

[0142] This invention proposes a magnetic field detection module. It utilizes a Wheatstone half-bridge constructed from first to fourth magnetic detection resistors 104. By setting the current directions from the first to the fourth, it ensures that the output node voltage does not change with the direction of the signal magnetic field when only a signal magnetic field exists. Furthermore, by acquiring and plotting the ratio curve of the output node voltage to the supply voltage, it replaces the resistance curve of traditional anisotropic magnetoresistive devices, avoiding the situation where multiple sine waves are output, making analysis impossible.

[0143] Furthermore, to uniquely obtain the magnetic field angle when a ratio curve image (also known as a state curve) corresponds to multiple magnetic field angles, this invention applies excitation magnetic fields in different directions to the magnetic sensing resistor in a first state and a second state, obtaining the output node voltage values ​​in the first and second states. Since the first and second state curves do not coincide, a unique angle of the signal magnetic field can be obtained by corresponding to the output node voltage values ​​in the first and second states. Specifically, a second state curve is introduced to further determine the multiple magnetic field angles obtained from the first state curve. Based on the above concept and technical steps, this invention can highlight the difference between 0° and 360° of the anisotropic magnetoresistive magnetic field sensing chip through the Wheatstone half-bridge and the output node voltage values ​​in the two states, and correspond the output node voltage values ​​in the two states one-to-one with the magnetic field angle of the signal magnetic field, thereby improving the measurement range of the magnetic field angle. More specifically, the magnetic field detection range of the anisotropic magnetoresistive magnetic field sensing chip is increased from 0° to 180° to 0° to 360°. That is, the magnetic field detection module generates a first output node signal in the first state and a second output node signal in the second state; the first output node signal and the second output node signal are used to match the magnetic field detection range to a numerical range of 0 degrees to 360 degrees.

[0144] The first magnetic sensing resistor 101 includes a first magnetoresistive element RA1, a second magnetoresistive element RA2, and a third magnetoresistive element RA3 connected in series and extending along a first direction; the second magnetic sensing resistor 102 includes a fourth magnetoresistive element RB1, a fifth magnetoresistive element RB2, and a sixth magnetoresistive element RB3 connected in series and extending along a second direction; the third magnetic sensing resistor 103 includes a seventh magnetoresistive element RC1, an eighth magnetoresistive element RC2, and a ninth magnetoresistive element RC3 connected in series and extending in the opposite direction of the first direction; the fourth magnetic sensing resistor 104 includes a tenth magnetoresistive element RD1, an eleventh magnetoresistive element RD2, and a twelfth magnetoresistive element RD3 connected in series and extending in the opposite direction of the second direction.

[0145] It should be noted that this invention does not limit the specific extension directions of the second magnetoresistive element RA2, the fifth magnetoresistive element RB2, the eighth magnetoresistive element RC2, and the eleventh magnetoresistive element RD2; it only needs to satisfy that when only a signal magnetic field exists in the magnetic field detection module, the voltage value of the output node remains unchanged when the direction of the signal magnetic field changes. It is easily understood that the extension direction of the second magnetoresistive element RA2 is opposite to that of the eighth magnetoresistive element RC2, and the extension direction of the fifth magnetoresistive element RB2 is opposite to that of the eleventh magnetoresistive element RD2. The extension directions of the second magnetoresistive element RA2 and the sixth magnetoresistive element RB3 can take two forms: 1. The second magnetoresistive element RA2 extends along a first direction, and the eighth magnetoresistive element RC2 extends in the opposite direction to the first direction, such as... Figure 12 As shown. Second, the second magnetoresistive element RA2 extends in the opposite direction to the first direction, and the eighth magnetoresistive element RC2 extends in the first direction, as shown. Figure 5 As shown. Accordingly, the extension directions of the fifth resistive element and the eleventh magnetoresistive element RD2 can take two forms: 1. The fifth magnetoresistive element RB2 extends along the second direction, and the eleventh magnetoresistive element RD2 extends in the opposite direction of the second direction. 2. The fifth magnetoresistive element RB2 extends in the opposite direction of the second direction, and the eleventh magnetoresistive element RD2 extends along the second direction.

[0146] Taking the first magnetic sensing resistor 101 as an example, the first magnetoresistive element RA1, the second magnetoresistive element RA2, and the third magnetoresistive element RA3, which are connected in series and extend along a first direction, represent the entire structure of the first to third magnetoresistive elements RA3 extending along the first direction. Judging from the current flow direction, the current enters from the first end of the first magnetoresistive element RA1 along the first direction, and the current exits from the third end of the third magnetoresistive element RA3 along the first direction. It is easy to understand that the extending direction of the first magnetoresistive element RA1 and the third magnetoresistive element RA3 is the first direction. (Refer to...) Figure 12 As shown, the extension direction of the second magnetoresistive element RA2 is the first direction, referring to... Figure 5 As shown, the extension direction of the second magnetoresistive element RA2 is the opposite direction to the first direction. Figure 5 and Figure 12As shown, when the extension direction of the second magnetoresistive element RA2 is the first direction, the wiring between the first magnetoresistive element RA1 and the second magnetoresistive element RA2 needs to be bent, which increases both the wiring length and the footprint of the first magnetic sensing resistor 101, hindering miniaturization. When the extension direction of the second magnetoresistive element RA2 is the second direction, the wiring between the first magnetoresistive element RA1 and the second magnetoresistive element RA2 is simpler compared to when the extension direction of the second magnetoresistive element RA2 is the first direction. It is particularly important to note that, in order to ensure that the voltage value of the output node remains unchanged when the magnetic field direction of the signal magnetic field changes, the extension direction of the second magnetoresistive element RA2 needs to be opposite to the extension direction of the sixth magnetoresistive element RB3.

[0147] The above description uses the first magnetic detection resistor 101 as an example, which is easy to understand. The second magnetic detection resistor 102 to the fourth magnetic detection resistor 104 are similar to the first magnetic detection resistor 101, and will not be described again here.

[0148] When the first direction is perpendicular to the second direction, the first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction.

[0149] In the same state, the same excitation magnetic field is applied to the first magnetic sensing resistor 101 and the fourth magnetic sensing resistor 104, and the same excitation magnetic field is applied to the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103. However, the directions of the excitation magnetic fields at the first magnetic sensing resistor 101 and the second magnetic sensing resistor 102 are opposite.

[0150] It should be noted that multiple magnetoresistive elements within the same magnetic sensing resistor share a single excitation magnetic field. The direction of the excitation magnetic field at each magnetoresistive element and the direction of the current at that element affect the deflection angle of the signal magnetization direction, thereby changing the resistance value of the magnetoresistive element. The change in resistance value of the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 determines the state curve formed by the voltage value of the output node changing with the angle of the signal magnetic field in that state. Different combinations of excitation magnetic field directions and corresponding current directions result in corresponding state curves. Then, the angle value of the signal magnetic field is uniquely determined by the first and second state curves.

[0151] Specifically, the direction of the first excitation magnetic field in the first state is perpendicular to the direction of the second excitation magnetic field in the second state; the direction of the first excitation magnetic field in the first state is also perpendicular to the direction of the first excitation magnetic field in the second state.

[0152] The following description uses the fourth to seventh embodiments of the present invention as examples. In the fourth to eighth embodiments, the extension direction of the second magnetoresistive element RA2 is the opposite direction of the first direction, the extension direction of the fifth magnetoresistive element RB2 is the opposite direction of the second direction, the extension direction of the eighth magnetoresistive element RC2 is the first direction, and the extension direction of the eleventh magnetoresistive element RD2 is the second direction.

[0153] In the fourth embodiment, in the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

[0154] like Figure 13 As shown, Figure 13 This is a schematic diagram of the magnetic field detection module in the first state of the fourth embodiment. In the first state, the direction of the first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is the second direction (parallel to the positive direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3, and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is the negative direction of the second direction (parallel to the negative direction of the second direction). Figure 8 Show, Figure 8 This is the first state curve of the fourth embodiment; it is denoted as the type-1 output curve.

[0155] like Figure 14 Show, Figure 14 This is a schematic diagram of the magnetic field detection module in the second state of the fourth embodiment. In the second state, the directions of the second excitation magnetic fields at the first magnetoresistive elements RA1 to RA3, and the tenth magnetoresistive elements RD1 to RD3, are the negative direction of the first direction (parallel to the negative direction of the first direction); the directions of the first excitation magnetic fields at the fourth magnetoresistive elements RB1 to RB3, and the seventh magnetoresistive elements RC1 to the ninth magnetoresistive source, are the first direction (parallel to the positive direction of the first direction). Figure 15 As shown, Figure 15 This is the second state curve of the fourth embodiment; it is denoted as the type-2 output curve.

[0156] Will Figure 8 and Figure 15 By combining, we obtain Figure 9 .Depend on Figure 9It can be seen that dividing 360° into 4 regions by using 90° as a region; the first region is from 0° to 90°. The angle value of a signal magnetic field can be uniquely determined within 360° using the values ​​on the first and second state curves (the voltage values ​​of the output nodes in the first and second states). Furthermore, in this embodiment, the angular range of the signal magnetic field can be determined by the voltage values ​​of the output nodes in the first and second states.

[0157] In the fifth embodiment of the present invention, in the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

[0158] It should be explained that the difference between the fifth embodiment and the fourth embodiment lies in the direction of the first excitation magnetic field and the direction of the second excitation magnetic field in the second state; specifically, the direction of the first excitation magnetic field differs by 180° in the first state and the second state, that is, they are in opposite directions. The change in the direction of the second excitation magnetic field is similar.

[0159] like Figure 16 As shown, Figure 16 This is a schematic diagram of the magnetic field detection module in the second state of the fifth embodiment. In the second state, the directions of the second excitation magnetic fields at the first magnetoresistive elements RA1 to RA3, and the tenth magnetoresistive elements RD1 to RD3, are the first direction (parallel to the positive direction of the first direction); the directions of the first excitation magnetic fields at the fourth magnetoresistive elements RB1 to RB3, and the seventh magnetoresistive elements RC1 to the ninth magnetoresistive source, are the negative direction of the first direction (parallel to the negative direction of the first direction). Figure 17 As shown, Figure 17 This is the second state curve of the fifth embodiment, which is denoted as the type-4 output curve.

[0160] It should be noted that, referring to Figure 14 and Figure 16 It can be seen that the excitation magnetic fields applied to the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 have opposite directions in the second state of the fourth and fifth embodiments. Figure 15 and Figure 17 As shown, the output curves of type-2 and type-4 are symmetrical about the 0.5 value on the vertical axis.

[0161] Will Figure 8 and Figure 17 By combining, we obtain Figure 18 ,Depend on Figure 18 Alternatively, a region can be divided into 90° zones, and 360° can be divided into 4 regions, uniquely determining the angle value of a signal magnetic field within 0 to 360°.

[0162] In the sixth embodiment of the present invention, in the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

[0163] It should be noted that the difference between the sixth embodiment and the fourth embodiment lies in the direction of the first excitation magnetic field and the direction of the second excitation magnetic field in the first state. Specifically, the direction of the first excitation magnetic field differs by 180° in the first and second states, that is, they are in opposite directions. The change in the direction of the second excitation magnetic field is similar.

[0164] like Figure 19 As shown, Figure 19 This is a schematic diagram of the magnetic field detection module in the first state of the sixth embodiment. In the first state, the direction of the first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3, and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is the second direction (parallel to the positive direction of the first direction). Figure 20 As shown, Figure 20 This is the first state curve of the sixth embodiment, which is denoted as the type-3 output curve.

[0165] It should be noted that, referring to Figure 13 and Figure 19 It can be seen that the excitation magnetic fields applied to the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 have opposite directions in the first state of the fourth embodiment and the sixth embodiment. Figure 8 , Figure 20 and Figure 10 As shown, the output curves of type-1 and type-3 are symmetrical about the 0.5 value on the vertical axis.

[0166] Will Figure 15 and Figure 20 By combining, we obtain Figure 21 , Figure 21Alternatively, a region can be divided into 90° zones, and 360° can be divided into 4 regions, uniquely determining the angle value of a signal magnetic field within 0 to 360°.

[0167] In the seventh embodiment of the present invention, in the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

[0168] It should be noted that the difference between the seventh embodiment and the fifth embodiment lies in the direction of the first excitation magnetic field and the direction of the second excitation magnetic field in the first state. Specifically, the direction of the first excitation magnetic field differs by 180° in the first and second states, that is, they are in opposite directions. The change in the direction of the second excitation magnetic field is similar.

[0169] like Figure 19 As shown, Figure 19 This is a schematic diagram of the magnetic field detection module in the first state of the seventh embodiment. In the first state, the direction of the first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3, and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is the second direction (parallel to the positive direction of the first direction). Figure 20 As shown, Figure 20 The first state curve of the seventh embodiment is also shown, which is denoted as the type-3 output curve.

[0170] It should be noted that, referring to Figure 16 and Figure 19 , Figure 16 A schematic diagram of the magnetic field detection module in the second state of the seventh embodiment is also shown. Figure 19 The diagram also shows a schematic of the magnetic field detection module in the first state of the seventh embodiment. It can be seen that the excitation magnetic fields applied to the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 have opposite directions in the first states of the fourth and sixth embodiments. Figure 8 and Figure 20 As shown, the output curves of type-1 and type-3 are symmetrical about the 0.5 value on the vertical axis.

[0171] Will Figure 20 and Figure 17 By combining, we obtain Figure 22 . Figure 22Dividing a region into 90° zones allows for the division of 360° into four zones, uniquely determining the angle value of a signal magnetic field within the range of 0 to 360°.

[0172] The magnetic field sensing module generates a first output node signal in the first state and a second output node signal in the second state; the first output node signal and the second output node signal are used to match the sensing direction information of the angle sensor to a numerical range of 0 degrees to 360 degrees.

[0173] Referring to the fourth to seventh embodiments described above, and Figures 8 to 22 The first output node signal is the voltage value of the output node in the first state, which varies with the angle of the signal magnetic field. The second output node signal is the voltage value of the output node in the second state, which varies with the angle of the signal magnetic field. It should be noted that the vertical axis of the type-1 to type-4 output curves represents the ratio of the output node voltage value to the supply voltage, and the horizontal axis represents the angle of the signal magnetic field. The position of the output node in the type-1 to type-4 output curves can be easily determined from the output node voltage values ​​in the first and second states, thus uniquely determining the angle of the signal magnetic field within the 0° to 360° angle range.

[0174] The preceding section described a magnetic field detection module that requires acquiring the voltage values ​​of the output nodes in a first state and a second state to determine the direction of the signal magnetic field. The direction of the excitation magnetic field changes between the first and second states. It should be noted that although the magnetic field detection module can determine the direction of the signal magnetic field, it requires acquiring the voltage values ​​of the output nodes twice. If the direction of the signal magnetic field changes over time, the time interval between these two acquisitions determines the degree of error in the determined angle of the signal magnetic field. Furthermore, since switching from the first state to the second state requires changing the direction of the excitation magnetic field applied to each magnetic detection resistor, the time required to determine the angle of the signal magnetic field is relatively long, making it impossible to quickly acquire the angle value of the signal magnetic field.

[0175] To address the aforementioned problems, this invention also proposes a magnetic field sensing module, such as... Figures 23 to 29 As shown, the magnetic field sensing module includes:

[0176] A first magnetic sensing resistor 101, a second magnetic sensing resistor 102, a third magnetic sensing resistor 103, and a fourth magnetic sensing resistor 104 are connected in series. The first current direction at the first magnetic sensing resistor 101 is set at an angle to the second current direction at the second magnetic sensing resistor 102; the second current direction at the second magnetic sensing resistor 102 is set at an angle to the third current direction at the third magnetic sensing resistor 103; the third current direction at the third magnetic sensing resistor 103 is set at an angle to the fourth current direction at the fourth magnetic sensing resistor 104; the second current direction at the second magnetic sensing resistor 102 is set at an angle to the third current direction at the third magnetic sensing resistor 103; a first output node is formed between the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103.

[0177] A fifth, sixth, seventh, and eighth magnetic sensing resistor are connected in series. The fifth current direction at the fifth magnetic sensing resistor is set at an angle to the sixth current direction at the sixth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; the seventh current direction at the seventh magnetic sensing resistor is set at an angle to the eighth current direction at the eighth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; a second output node is formed between the sixth and seventh magnetic sensing resistors.

[0178] The first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103, and the fourth magnetic detection resistor 104 are connected in parallel with the fifth, sixth, seventh, and eighth magnetic detection resistors.

[0179] It should be noted that the magnetic field sensing module can be considered as a combination of two magnetic field detection modules. Specifically, the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 constitute the first magnetic field detection module, and the fifth to the eighth magnetic detection resistors constitute the second magnetic field detection module. The first and second magnetic field detection modules share the same power supply and ground potential. The beneficial effects of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 constituting the first magnetic field detection module are as described above. Similarly, the fifth to the eighth magnetic detection resistors constituting the second magnetic field detection module also have the same beneficial effects, which will not be elaborated here. When only a signal magnetic field exists, the output values ​​of the first and second magnetic field detection modules remain unchanged.

[0180] Since the first and second magnetic detection modules share the same power supply and ground potential, the first, second, third, and fourth magnetic detection resistors 101, 102, 103, and 104 are connected in parallel with the fifth, sixth, seventh, and eighth magnetic detection resistors. Specifically, the first end of the first magnetic detection resistor 101 and the second end of the fourth magnetic detection resistor 104 form the beginning and end nodes of the first magnetic detection module; the first end of the fifth magnetic detection resistor and the second end of the eighth magnetic detection resistor form the beginning and end nodes of the second magnetic detection module. Either node of the beginning and end nodes of the first magnetic detection module is connected to the power supply, and the other node is grounded; either node of the beginning and end nodes of the second magnetic detection module is connected to the power supply, and the other node is grounded.

[0181] A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor 102 and the third magnetic detection resistor 103; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor.

[0182] The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field.

[0183] It should be noted that, to address the issue of needing to acquire the voltage value of the output node twice, which prevents the rapid determination of the signal magnetic field angle, this invention utilizes a first magnetic detection module and a second magnetic detection module constructed from the first magnetic detection resistor 101 to the eighth magnetic detection resistor to determine the angle value of the signal magnetic field. Specifically, one of the first and second magnetic detection modules is positioned in the first state described above, while the other is in the second state. This allows for the simultaneous determination of the voltage values ​​at the first and second output nodes, directly determining the angle of the signal magnetic field. This reduces the time required to determine the signal magnetic field angle and enables rapid acquisition of the angle value. Furthermore, it avoids errors in the determined signal magnetic field angle caused by the time interval between acquiring the output node values.

[0184] To ensure that either the first magnetic detection module or the second magnetic detection module is in the first state described above, and the other magnetic detection module is in the second state, the direction of the first excitation magnetic field is not the same as the direction of the third excitation magnetic field.

[0185] It should be noted that the various internal structure settings, current direction settings, and excitation magnetic field settings of the first magnetic detection module / second magnetic detection module when it is in the first state or the second state are as shown above, and will not be repeated here.

[0186] In the eighth embodiment of the present invention, the first magnetic detection resistor 101 includes a first magnetoresistive element RA1, a second magnetoresistive element RA2, and a third magnetoresistive element RA3 connected in series and extending along a first direction; the second magnetic detection resistor 102 includes a fourth magnetoresistive element RB1, a fifth magnetoresistive element RB2, and a sixth magnetoresistive element RB3 connected in series and extending along a second direction; the third magnetic detection resistor 103 includes a seventh magnetoresistive element RC1, an eighth magnetoresistive element RC2, and a ninth magnetoresistive element RC3 connected in series and extending along a first direction; the fourth magnetic detection resistor 104 includes a tenth magnetoresistive element RD1, an eleventh magnetoresistive element RD2, and a twelfth magnetoresistive element RD3 connected in series and extending along a second direction.

[0187] The fifth magnetic detection resistor includes a thirteenth, fourteenth, and fifteenth magnetoresistive element connected in series and extending along a first direction; the sixth magnetic detection resistor includes a sixteenth, seventeenth, and eighteenth magnetoresistive element connected in series and extending along a second direction; the seventh magnetic detection resistor includes a nineteenth, twentieth, and twenty-first magnetoresistive element connected in series and extending along a first direction; and the eighth magnetic detection resistor includes a twenty-second, twenty-third, and twenty-fourth magnetoresistive element connected in series and extending along a second direction.

[0188] It should be noted that the various arrangements of the first to twelfth magnetic sensing resistors 101 and their corresponding beneficial effects are as described above, and will not be repeated here. Furthermore, the construction of the thirteenth to twenty-fourth magnetic sensing resistors is similar to that of the first to twelfth magnetic sensing resistors 101, and is readily available; both can have the same arrangement and beneficial effects. Therefore, they will not be described further here.

[0189] Specifically, the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field. The present invention is illustrated by examples from the ninth to the twelfth embodiments.

[0190] In the ninth embodiment of the present invention, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; the direction of the third excitation magnetic field is parallel to the negative direction of the first direction, the direction of the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

[0191] like Figure 25 As shown, Figure 25 This is a schematic diagram of the magnetic field sensing module in the ninth embodiment. The first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is in the second direction (parallel to the positive direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3, and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is in the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the third excitation magnetic field at the thirteenth to the fifteenth magnetoresistive element, and the twenty-second to the twenty-fourth magnetoresistive element is in the negative direction of the first direction (parallel to the negative direction of the first direction); the fourth excitation magnetic field at the sixteenth to the twenty-first magnetoresistive element is in the first direction (parallel to the positive direction of the first direction).

[0192] It is readily apparent that the first magnetic detection module and the second magnetic detection module in the ninth embodiment respectively possess the excitation magnetic field relationship in the first state and the second state of the fourth embodiment. As can be seen from the content of the fourth embodiment above, Figure 26 Two state curves from the ninth embodiment are shown, namely the type-1 output curve and the type-2 output curve. In the ninth embodiment, the angle value of the signal magnetic field is determined by the voltage values ​​of the first output node and the second output node.

[0193] In the tenth embodiment of the present invention, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; the direction of the third excitation magnetic field is parallel to the positive direction of the first direction, the direction of the fourth excitation magnetic field is parallel to the negative direction of the first direction, and the first direction is perpendicular to the second direction.

[0194] In this embodiment, as Figure 27 As shown, Figure 27This is a schematic diagram of the magnetic field sensing module in the tenth embodiment. The first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is in the second direction (parallel to the positive direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3, and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is in the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the third excitation magnetic field at the thirteenth to the fifteenth magnetoresistive element, and the twenty-second to the twenty-fourth magnetoresistive element is in the first direction (parallel to the positive direction of the first direction); the fourth excitation magnetic field at the sixteenth to the twenty-first magnetoresistive element is in the negative direction of the first direction (parallel to the negative direction of the first direction).

[0195] It is readily apparent that the first magnetic detection module and the second magnetic detection module in the tenth embodiment respectively possess the excitation magnetic field relationship in the first state and the second state of the fifth embodiment. As can be seen from the content of the fifth embodiment above, Figure 8 and Figure 17 The tenth embodiment shows two state curves, namely the type-1 output curve and the type-4 output curve; combined with Figure 8 and Figure 17 It can be obtained Figure 28 In the tenth embodiment, the angle value of the signal magnetic field is determined by the voltage value of the first output node and the voltage value of the second output node.

[0196] In the eleventh embodiment of the present invention, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; the direction of the third excitation magnetic field is parallel to the positive direction of the first direction, the direction of the fourth excitation magnetic field is parallel to the negative direction of the first direction, and the first direction is perpendicular to the second direction.

[0197] In this embodiment, as in this embodiment, Figure 29 As shown, Figure 29This is a schematic diagram of the magnetic field sensing module in the eleventh embodiment. The first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is in the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3, and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is in the second direction (parallel to the positive direction of the second direction); the direction of the third excitation magnetic field at the thirteenth to the fifteenth magnetoresistive element, and the twenty-second to the twenty-fourth magnetoresistive element is in the first direction (parallel to the positive direction of the first direction); the fourth excitation magnetic field at the sixteenth to the twenty-first magnetoresistive element is in the negative direction of the first direction (parallel to the negative direction of the first direction).

[0198] It is readily apparent that the first magnetic detection module and the second magnetic detection module in the eleventh embodiment respectively possess the excitation magnetic field relationship in the first state and the second state of the sixth embodiment. As can be seen from the content of the sixth embodiment above, Figure 20 and Figure 15 The tenth embodiment shows two state curves, namely the type-3 output curve and the type-2 output curve; combined with Figure 20 and Figure 15 It can be obtained Figure 21 In the eleventh embodiment, the angle value of the signal magnetic field is determined by the voltage values ​​of the first output node and the second output node.

[0199] In the twelfth embodiment of the present invention, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; the direction of the third excitation magnetic field is parallel to the negative direction of the first direction, the direction of the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

[0200] In this embodiment, in this embodiment, in this embodiment, as Figure 30 As shown, Figure 30This is a schematic diagram of the magnetic field sensing module in the twelfth embodiment. The first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is in the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3, and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is in the second direction (parallel to the positive direction of the second direction); the direction of the third excitation magnetic field at the thirteenth magnetoresistive element to the fifteenth magnetoresistive element, and the twenty-second to twenty-fourth magnetoresistive element is in the negative direction of the first direction (parallel to the negative direction of the first direction); the fourth excitation magnetic field at the sixteenth magnetoresistive element to the twenty-first magnetoresistive element is in the first direction (parallel to the positive direction of the first direction).

[0201] It is readily apparent that the first magnetic detection module and the second magnetic detection module in the twelfth embodiment respectively possess the excitation magnetic field relationship in the first state and the second state of the seventh embodiment. As can be seen from the content of the seventh embodiment above, Figure 17 and Figure 20 The tenth embodiment shows two state curves, namely the type-4 output curve and the type-3 output curve; combined with Figure 17 and Figure 20 It can be obtained Figure 22 In the twelfth embodiment, the angle value of the signal magnetic field is determined by the voltage values ​​of the first output node and the second output node.

[0202] This invention also proposes a magnetic field detection module, such as... Figure 31 As shown, the magnetic field detection module includes:

[0203] A first magnetic sensing resistor 101, a second magnetic sensing resistor 102, a third magnetic sensing resistor 103, and a fourth magnetic sensing resistor 104 are connected in series. The first current direction at the first magnetic sensing resistor 101 is set at an angle to the second current direction at the second magnetic sensing resistor 102; the second current direction at the second magnetic sensing resistor 102 is set at an angle to the third current direction at the third magnetic sensing resistor 103; the third current direction at the third magnetic sensing resistor 103 is set at an angle to the fourth current direction at the fourth magnetic sensing resistor 104; the second current direction at the second magnetic sensing resistor 102 is set at an angle to the third current direction at the third magnetic sensing resistor 103; a first output node is formed between the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103.

[0204] A fifth, sixth, seventh, and eighth magnetic sensing resistor are connected in series. The fifth current direction at the fifth magnetic sensing resistor is set at an angle to the sixth current direction at the sixth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; the seventh current direction at the seventh magnetic sensing resistor is set at an angle to the eighth current direction at the eighth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; a second output node is formed between the sixth and seventh magnetic sensing resistors.

[0205] The first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103, and the fourth magnetic detection resistor 104 are connected in parallel with the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor.

[0206] A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor 102 and the third magnetic detection resistor 103; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor.

[0207] The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is opposite to the direction of the third excitation magnetic field.

[0208] It should be noted that the direction of the first excitation magnetic field is opposite to the direction of the third excitation magnetic field. Furthermore, since the magnetic field strength of each excitation magnetic field is equal, the third excitation magnetic field is the same as the second excitation magnetic field, and the fourth excitation magnetic field is the same as the first excitation magnetic field.

[0209] Therefore, the excitation magnetic fields at the first to eighth magnetic sensing resistors can be represented as follows: a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic sensing resistor 101 and the fourth magnetic sensing resistor 104; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic sensing resistor 102 and the third magnetic sensing resistor 103; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the fifth and eighth magnetic sensing resistors; and a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the sixth and seventh magnetic sensing resistors. The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field.

[0210] It should be noted that the first magnetic sensing resistor 101 to the fourth magnetic sensing resistor 104 are connected in series, with the first magnetic sensing resistor 101 and the fourth magnetic sensing resistor 104 being the first and last nodes; the fifth magnetic sensing resistor to the eighth magnetic sensing resistor are also connected in series, with the fifth magnetic sensing resistor and the eighth magnetic sensing resistor being the first and last nodes. The excitation magnetic field at the first magnetic sensing resistor 101 and the fourth magnetic sensing resistor 104 is in the opposite direction to the excitation magnetic field at the fifth magnetic sensing resistor and the eighth magnetic sensing resistor. It is readily apparent that, when sharing the same power supply and the same ground potential, regardless of which two nodes (first and fifth magnetic sensing resistors, first and eighth magnetic sensing resistors, fourth and fifth magnetic sensing resistors, or fourth and eighth magnetic sensing resistors) are specifically connected to the power supply, the state curves of the first and second output nodes are symmetrical about the vertical axis of 0.5. It is also readily apparent that the voltage values ​​at the first and second output nodes are symmetrical about the vertical axis of 0.5. symmetry, The supply voltage is used. The voltage value at the first output node is subtracted from the voltage value at the second output node, and the result is a first subtracted output curve. This first subtracted output curve is then converted into a state curve (by dividing the voltage value of the first subtracted output curve by the supply voltage, using the ratio to construct the state curve). Compared to the state curves of the first and second output nodes, this state curve has the advantage of improved signal peak-to-peak value. A higher signal peak-to-peak value means a larger signal amplitude. For weak signals, improving the signal peak-to-peak value makes them easier to detect and facilitates subsequent judgment.

[0211] Examples are given by the thirteenth and fourteenth embodiments of the present invention.

[0212] In the thirteenth embodiment of the present invention, the first magnetic detection resistor 101 includes a first magnetoresistive element RA1, a second magnetoresistive element RA2, and a third magnetoresistive element RA3 connected in series and extending along a first direction; the second magnetic detection resistor 102 includes a fourth magnetoresistive element RB1, a fifth magnetoresistive element RB2, and a sixth magnetoresistive element RB3 connected in series and extending along a second direction; the third magnetic detection resistor 103 includes a seventh magnetoresistive element RC1, an eighth magnetoresistive element RC2, and a ninth magnetoresistive element RC3 connected in series and extending along a first direction; and the fourth magnetic detection resistor 104 includes a tenth magnetoresistive element RD1, an eleventh magnetoresistive element RD2, and a twelfth magnetoresistive element RD3 connected in series and extending along a second direction.

[0213] The fifth magnetic sensing resistor includes a thirteenth, fourteenth, and fifteenth magnetoresistive element connected in series and extending along a first direction; the sixth magnetic sensing resistor includes a sixteenth, seventeenth, and eighteenth magnetoresistive element connected in series and extending along a second direction; the seventh magnetic sensing resistor includes a nineteenth, twentieth, and twenty-first magnetoresistive element connected in series and extending along a first direction; the eighth magnetic sensing resistor includes a twenty-second, twenty-third, and twenty-fourth magnetoresistive element connected in series and extending along a second direction. The first direction is perpendicular to the second direction.

[0214] like Figure 32 As shown, when the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, the direction of the first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3, the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3, and the sixteenth magnetoresistive element to the twenty-first magnetoresistive element is parallel to the positive direction of the second direction. The direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the ninth magnetoresistive element RC3, the thirteenth magnetoresistive element to the fifteenth magnetoresistive element, and the twenty-second magnetoresistive element to the twenty-fourth magnetoresistive element is parallel to the negative direction of the second direction.

[0215] It should be noted that arrows MF1 to MF8 in the attached diagram represent the directions of the excitation magnetic fields at the first magnetic detection resistor 101 to the eighth magnetic detection resistor, respectively.

[0216] like Figure 20 and Figure 8 As shown, Figure 8 This is the state curve at the first output node. Figure 20 This is the state curve at the second output node.

[0217] Combination Figure 8 and Figure 20The first subtracted output curve will be obtained based on the state curves at the first and second output nodes, and then converted into a state curve, such as... Figure 33 As shown.

[0218] It should be noted that, in this embodiment, the state curve at the first output node (corresponding to Type-1) is subtracted from the state curve at the second output node (corresponding to Type-3) to obtain the first subtracted output curve, which is then converted into a state curve (as shown in Type-5). If the state curve at the second output node (corresponding to Type-3) is subtracted from the state curve at the first output node (corresponding to Type-1) in this embodiment, the resulting state curve is identified as state curve Type-7. State curves Type-5 and Type-7 are symmetrical about the vertical axis value of 0.5.

[0219] In the fourteenth embodiment of the present invention, the first magnetic detection resistor 101 includes a first magnetoresistive element RA1, a second magnetoresistive element RA2, and a third magnetoresistive element RA3 connected in series and extending along a first direction; the second magnetic detection resistor 102 includes a fourth magnetoresistive element RB1, a fifth magnetoresistive element RB2, and a sixth magnetoresistive element RB3 connected in series and extending along a second direction; the third magnetic detection resistor 103 includes a seventh magnetoresistive element RC1, an eighth magnetoresistive element RC2, and a ninth magnetoresistive element RC3 connected in series and extending along a first direction; and the fourth magnetic detection resistor 104 includes a tenth magnetoresistive element RD1, an eleventh magnetoresistive element RD2, and a twelfth magnetoresistive element RD3 connected in series and extending along a second direction.

[0220] The fifth magnetic sensing resistor includes a thirteenth, fourteenth, and fifteenth magnetoresistive element connected in series and extending along a first direction; the sixth magnetic sensing resistor includes a sixteenth, seventeenth, and eighteenth magnetoresistive element connected in series and extending along a second direction; the seventh magnetic sensing resistor includes a nineteenth, twentieth, and twenty-first magnetoresistive element connected in series and extending along a first direction; the eighth magnetic sensing resistor includes a twenty-second, twenty-third, and twenty-fourth magnetoresistive element connected in series and extending along a second direction. The first direction is perpendicular to the second direction.

[0221] like Figure 34As shown, when the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, the directions of the first excitation magnetic fields at the first magnetoresistive elements RA1 to RA3, the tenth magnetoresistive elements RD1 to RD3, and the sixteenth to twenty-first magnetoresistive elements are parallel to the positive direction of the first direction. The directions of the second excitation magnetic fields at the fourth magnetoresistive elements RB1 to RC3, the thirteenth to fifteenth magnetoresistive elements, and the twenty-second to twenty-fourth magnetoresistive elements are parallel to the negative direction of the first direction.

[0222] like Figure 17 and Figure 15 As shown, Figure 17 This is the state curve at the first output node. Figure 15 This is the state curve at the second output node.

[0223] Combination Figure 15 and Figure 17 The second subtracted output curve will be obtained based on the state curves at the first and second output nodes, and then converted into a state curve, as shown below. Figure 35 As shown.

[0224] It should be noted that, in this embodiment, the state curve at the second output node (corresponding to Type-2) is subtracted from the state curve at the first output node (corresponding to Type-4) to obtain the second subtracted output curve, which is then converted into a state curve (as shown in Type-6). If the state curve at the first output node (corresponding to Type-4) is subtracted from the state curve at the second output node (corresponding to Type-2) in this embodiment, the resulting state curve is identified as state curve Type-8. State curves Type-6 and Type-8 are symmetrical about the vertical axis value of 0.5.

[0225] It should be noted that, since the direction of the first excitation magnetic field in the thirteenth embodiment and the direction of the first excitation magnetic field in the fourteenth embodiment are perpendicular to each other, it can be achieved through... Figure 33 Type-5 curves and Figure 35 The Type-6 curve is used to determine the angle of the signal magnetic field.

[0226] The magnetic field detection module also includes:

[0227] A ninth, tenth, eleventh, and twelfth magnetic sensing resistor are connected in series. The ninth current direction at the ninth magnetic sensing resistor is set at an angle to the tenth current direction at the tenth magnetic sensing resistor; the tenth current direction at the tenth magnetic sensing resistor is set at an angle to the eleventh current direction at the eleventh magnetic sensing resistor; the eleventh current direction at the eleventh magnetic sensing resistor is set at an angle to the twelfth current direction at the twelfth magnetic sensing resistor; the tenth current direction at the tenth magnetic sensing resistor is set at an angle to the eleventh current direction at the eleventh magnetic sensing resistor; a third output node is formed between the tenth and eleventh magnetic sensing resistors.

[0228] A series of thirteenth, fourteenth, fifteenth, and sixteenth magnetic sensing resistors are connected. The thirteenth current direction at the thirteenth magnetic sensing resistor is set at an angle to the fourteenth current direction at the fourteenth magnetic sensing resistor; the fourteenth current direction at the fourteenth magnetic sensing resistor is set at an angle to the fifteenth current direction at the fifteenth magnetic sensing resistor; the fifteenth current direction at the fifteenth magnetic sensing resistor is set at an angle to the sixteenth current direction at the sixteenth magnetic sensing resistor; the fourteenth current direction at the fourteenth magnetic sensing resistor is set at an angle to the fifteenth current direction at the fifteenth magnetic sensing resistor; a fourth output node is formed between the fourteenth and fifteenth magnetic sensing resistors.

[0229] The ninth, tenth, eleventh, and twelfth magnetic detection resistors are connected in parallel with the thirteenth, fourteenth, fifteenth, and sixteenth magnetic detection resistors.

[0230] A signal magnetic field carrying a direction signal and a fifth excitation magnetic field are applied to the ninth and twelfth magnetic detection resistors; a signal magnetic field carrying a direction signal and a sixth excitation magnetic field are applied to the tenth and eleventh magnetic detection resistors; a signal magnetic field carrying a direction signal and a seventh excitation magnetic field are applied to the thirteenth and sixteenth magnetic detection resistors; a signal magnetic field carrying a direction signal and an eighth excitation magnetic field are applied to the fourteenth and fifteenth magnetic detection resistors.

[0231] The direction of the fifth excitation magnetic field is opposite to that of the sixth excitation magnetic field, the direction of the seventh excitation magnetic field is opposite to that of the eighth excitation magnetic field, and the direction of the fifth excitation magnetic field is opposite to that of the seventh excitation magnetic field; the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field.

[0232] It should be noted that the direction of the fifth excitation magnetic field is opposite to the direction of the seventh excitation magnetic field. The structure and beneficial effects of the first to eighth magnetic detection resistors 101 are as described above. Similarly, the structure and beneficial effects of the ninth to sixteenth magnetic detection resistors are the same and will not be repeated here. In the structure composed of the ninth to sixteenth magnetic detection resistors, the second subtraction output curve can be obtained based on the state curves at the third and fourth output nodes, and then converted into a state curve.

[0233] like Figure 31 As shown, the ninth magnetic detection resistor includes a twenty-fifth, a twenty-sixth, and a twenty-seventh magnetoresistive element connected in series and extending along a first direction; the tenth magnetic detection resistor includes a twenty-eighth, a twenty-ninth, and a thirtieth magnetoresistive element connected in series and extending along a second direction; the eleventh magnetic detection resistor includes a thirty-first, a thirty-second, and a thirty-third magnetoresistive element connected in series and extending along a first direction; and the twelfth magnetic detection resistor includes a thirty-fourth, a thirty-fifth, and a thirty-sixth magnetoresistive element connected in series and extending along a second direction.

[0234] The thirteenth magnetic detection resistor includes a thirty-seventh, a thirty-eighth, and a thirty-ninth magnetoresistive element connected in series and extending along a first direction; the fourteenth magnetic detection resistor includes a fortieth, a forty-first, and a forty-second magnetoresistive element connected in series and extending along a second direction; the fifteenth magnetic detection resistor includes a forty-third, a forty-fourth, and a forty-fifth magnetoresistive element connected in series and extending along a first direction; and the sixteenth magnetic detection resistor includes a forty-sixth, a forty-seventh, and a forty-eighth magnetoresistive element connected in series and extending along a second direction.

[0235] It should be noted that, since the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field, refer to the descriptions in the thirteenth and fourteenth embodiments. In the thirteenth embodiment, the direction of the first excitation magnetic field is perpendicular to the direction of the first excitation magnetic field in the fourteenth embodiment. In the magnetic field detection module proposed in this invention, when either the direction of the first excitation magnetic field or the direction of the fifth excitation magnetic field is the positive direction of the second direction, and the other is the positive direction of the first direction, it can be achieved through... Figure 33 Type-5 curves and Figure 35 The Type-6 curve determines the angle of the signal's magnetic field. It's easy to understand that the Type-5 and Type-6 curves can be plotted on the same graph.

[0236] Based on the above concept, and considering the symmetry between the Type-5 and Type-7 curves about the 0.5 value on the vertical axis, as well as the symmetry between the Type-6 and Type-8 curves about the 0.5 value on the vertical axis, the angle of the signal magnetic field can also be determined in the following scenarios.

[0237] 1. Plot the Type-5 curve and the Type-6 curve on the same graph.

[0238] 2. Plot the Type-7 curve and the Type-6 curve on the same graph.

[0239] 3. Plot the Type-5 curve and the Type-8 curve on the same graph.

[0240] 4. Plot the Type-7 curve and the Type-8 curve on the same graph.

[0241] The magnetic field detection module proposed in this invention obtains a signal peak-to-peak boosted state curve by subtracting two state curves symmetrical about the vertical axis of 0.5, making it easier to detect; then, by using two state curves that have undergone signal peak-to-peak boosting (the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field), the angle value of the signal magnetic field is determined, which can improve the success rate of identification and judgment.

[0242] It should be noted that the first magnetic detection resistor 101 to the eighth magnetic detection resistor, as well as the ninth magnetic detection resistor to the tenth magnetic detection resistor, share the same power supply and ground potential.

[0243] The present invention also proposes a magnetic sensor, which includes the magnetic field detection module, or the magnetic field sensing module, or the magnetic field detection module.

[0244] The specific structure and beneficial effects of the magnetic field detection module, magnetic field sensing module, and magnetic field sensing module have been described above and will not be repeated here. Since this magnetic sensor adopts all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be elaborated upon here.

[0245] The above description is merely an optional embodiment of the present invention and does not limit the scope of the present invention. Any equivalent structural transformations made using the contents of the present invention specification and drawings under the inventive concept of the present invention, or direct / indirect applications in other related technical fields, are included within the protection scope of the present invention.

Claims

1. A magnetic field detection module, characterized in that, The magnetic field detection module includes: A first magnetic sensing resistor, a second magnetic sensing resistor, a third magnetic sensing resistor, and a fourth magnetic sensing resistor are connected in series. The first current direction at the first magnetic sensing resistor is at an angle to the second current direction at the second magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; the third current direction at the third magnetic sensing resistor is at an angle to the fourth current direction at the fourth magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; and an output node is formed between the second magnetic sensing resistor and the third magnetic sensing resistor. In the first state, a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor. In the second state, a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor. In the same state, the direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field.

2. The magnetic field detection module as described in claim 1, characterized in that, The first magnetic detection resistor includes a first magnetoresistive element, a second magnetoresistive element, and a third magnetoresistive element connected in series and extending along a first direction; the second magnetic detection resistor includes a fourth magnetoresistive element, a fifth magnetoresistive element, and a sixth magnetoresistive element connected in series and extending along a second direction; the third magnetic detection resistor includes a seventh magnetoresistive element, an eighth magnetoresistive element, and a ninth magnetoresistive element connected in series and extending in the opposite direction to the first direction; the fourth magnetic detection resistor includes a tenth magnetoresistive element, an eleventh magnetoresistive element, and a twelfth magnetoresistive element connected in series and extending in the opposite direction to the second direction.

3. The magnetic field detection module as described in claim 2, characterized in that, In the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

4. The magnetic field detection module as described in claim 2, characterized in that, In the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

5. The magnetic field detection module as described in claim 2, characterized in that, In the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

6. The magnetic field detection module as described in claim 2, characterized in that, In the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

7. The magnetic field detection module as described in claim 1, characterized in that, The first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction.

8. The magnetic field detection module as described in any one of claims 1 to 7, characterized in that, The magnetic field detection module generates a first output node signal in the first state and a second output node signal in the second state; the first output node signal and the second output node signal are used to match the magnetic field detection range to a numerical range of 0 degrees to 360 degrees.

9. A magnetic field sensing module, characterized in that, The magnetic field sensing module includes: A first magnetic sensing resistor, a second magnetic sensing resistor, a third magnetic sensing resistor, and a fourth magnetic sensing resistor are connected in series. The first current direction at the first magnetic sensing resistor is at an angle to the second current direction at the second magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; the third current direction at the third magnetic sensing resistor is at an angle to the fourth current direction at the fourth magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; a first output node is formed between the second magnetic sensing resistor and the third magnetic sensing resistor. A fifth, sixth, seventh, and eighth magnetic sensing resistor are connected in series. The fifth current direction at the fifth magnetic sensing resistor is set at an angle to the sixth current direction at the sixth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; the seventh current direction at the seventh magnetic sensing resistor is set at an angle to the eighth current direction at the eighth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; a second output node is formed between the sixth and seventh magnetic sensing resistors. The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor, the fourth magnetic detection resistor, and the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor are connected in parallel; A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor. The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field.

10. The magnetic field sensing module as described in claim 9, characterized in that, The first magnetic detection resistor includes a first magnetoresistive element, a second magnetoresistive element, and a third magnetoresistive element connected in series and extending along a first direction; the second magnetic detection resistor includes a fourth magnetoresistive element, a fifth magnetoresistive element, and a sixth magnetoresistive element connected in series and extending along a second direction; the third magnetic detection resistor includes a seventh magnetoresistive element, an eighth magnetoresistive element, and a ninth magnetoresistive element connected in series and extending along a first direction; the fourth magnetic detection resistor includes a tenth magnetoresistive element, an eleventh magnetoresistive element, and a twelfth magnetoresistive element connected in series and extending along a second direction. The fifth magnetic detection resistor includes a thirteenth, fourteenth, and fifteenth magnetoresistive element connected in series and extending along a first direction; the sixth magnetic detection resistor includes a sixteenth, seventeenth, and eighteenth magnetoresistive element connected in series and extending along a second direction; the seventh magnetic detection resistor includes a nineteenth, twentieth, and twenty-first magnetoresistive element connected in series and extending along a first direction; and the eighth magnetic detection resistor includes a twenty-second, twenty-third, and twenty-fourth magnetoresistive element connected in series and extending along a second direction.

11. The magnetic field sensing module as described in claim 10, characterized in that, The direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; the direction of the third excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the fourth excitation magnetic field is parallel to the negative direction of the first direction, and the first direction is perpendicular to the second direction.

12. The magnetic field sensing module as described in claim 10, characterized in that, The direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; the direction of the third excitation magnetic field is parallel to the negative direction of the first direction, the direction of the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

13. The magnetic field sensing module as described in claim 10, characterized in that, The direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; the direction of the third excitation magnetic field is parallel to the positive direction of the first direction, the direction of the fourth excitation magnetic field is parallel to the negative direction of the first direction, and the first direction is perpendicular to the second direction.

14. The magnetic field sensing module as described in claim 10, characterized in that, The direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; the direction of the third excitation magnetic field is parallel to the negative direction of the first direction, the direction of the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

15. A magnetic field detection module, characterized in that, The magnetic field detection module includes: A first magnetic sensing resistor, a second magnetic sensing resistor, a third magnetic sensing resistor, and a fourth magnetic sensing resistor are connected in series. The first current direction at the first magnetic sensing resistor is at an angle to the second current direction at the second magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; the third current direction at the third magnetic sensing resistor is at an angle to the fourth current direction at the fourth magnetic sensing resistor; the second current direction at the second magnetic sensing resistor is at an angle to the third current direction at the third magnetic sensing resistor; a first output node is formed between the second magnetic sensing resistor and the third magnetic sensing resistor. A fifth, sixth, seventh, and eighth magnetic sensing resistor are connected in series. The fifth current direction at the fifth magnetic sensing resistor is set at an angle to the sixth current direction at the sixth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; the seventh current direction at the seventh magnetic sensing resistor is set at an angle to the eighth current direction at the eighth magnetic sensing resistor; the sixth current direction at the sixth magnetic sensing resistor is set at an angle to the seventh current direction at the seventh magnetic sensing resistor; a second output node is formed between the sixth and seventh magnetic sensing resistors. The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor, the fourth magnetic detection resistor, and the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor are connected in parallel; A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor. The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is opposite to the direction of the third excitation magnetic field; The magnetic field detection module also includes: A ninth, tenth, eleventh, and twelfth magnetic sensing resistor are connected in series. The ninth current direction at the ninth magnetic sensing resistor is set at an angle to the tenth current direction at the tenth magnetic sensing resistor; the tenth current direction at the tenth magnetic sensing resistor is set at an angle to the eleventh current direction at the eleventh magnetic sensing resistor; the eleventh current direction at the eleventh magnetic sensing resistor is set at an angle to the twelfth current direction at the twelfth magnetic sensing resistor; the tenth current direction at the tenth magnetic sensing resistor is set at an angle to the eleventh current direction at the eleventh magnetic sensing resistor; a third output node is formed between the tenth and eleventh magnetic sensing resistors. A series of thirteenth, fourteenth, fifteenth, and sixteenth magnetic sensing resistors are connected. The thirteenth current direction at the thirteenth magnetic sensing resistor is set at an angle to the fourteenth current direction at the fourteenth magnetic sensing resistor; the fourteenth current direction at the fourteenth magnetic sensing resistor is set at an angle to the fifteenth current direction at the fifteenth magnetic sensing resistor; the fifteenth current direction at the fifteenth magnetic sensing resistor is set at an angle to the sixteenth current direction at the sixteenth magnetic sensing resistor; the fourteenth current direction at the fourteenth magnetic sensing resistor is set at an angle to the fifteenth current direction at the fifteenth magnetic sensing resistor; a fourth output node is formed between the fourteenth and fifteenth magnetic sensing resistors. The ninth, tenth, eleventh, and twelfth magnetic detection resistors are connected in parallel with the thirteenth, fourteenth, fifteenth, and sixteenth magnetic detection resistors. A signal magnetic field carrying a direction signal and a fifth excitation magnetic field are applied to the ninth and twelfth magnetic detection resistors; a signal magnetic field carrying a direction signal and a sixth excitation magnetic field are applied to the tenth and eleventh magnetic detection resistors; a signal magnetic field carrying a direction signal and a seventh excitation magnetic field are applied to the thirteenth and sixteenth magnetic detection resistors; a signal magnetic field carrying a direction signal and an eighth excitation magnetic field are applied to the fourteenth and fifteenth magnetic detection resistors. The direction of the fifth excitation magnetic field is opposite to that of the sixth excitation magnetic field, the direction of the seventh excitation magnetic field is opposite to that of the eighth excitation magnetic field, and the direction of the fifth excitation magnetic field is opposite to that of the seventh excitation magnetic field; the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field.

16. A magnetic sensor, characterized in that, The magnetic sensor includes a magnetic field detection module as described in any one of claims 1 to 8, or a magnetic field sensing module as described in any one of claims 9 to 14, or a magnetic field detection module as described in claim 15.

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