Plasma etching device

The design of the lifting frame and adjustable nozzle solves the gas waste and sealing problems of existing plasma etching devices when processing wafers of different sizes, achieving an efficient etching process and improving product quality.

CN120809562AActive Publication Date: 2025-10-17SUZHOU YUNHONG PLASTIC
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Patent Information

Application Number
CN202510841383.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-23
Publication Date
2025-10-17
Estimated Expiration
2045-06-23

AI Technical Summary

Technical Problem

When existing plasma etching devices process semiconductor wafers of different sizes, the size of the jet disk is fixed, resulting in the inability to adjust the nozzle position, causing etching gas waste and affecting equipment performance, affecting production efficiency and product quality.

Method used

The design of a liftable lifting frame and adjustable nozzle position, combined with magnetic connection and blocking components, ensures flexible adjustment of the number and position of nozzles, achieves precise coverage of wafers of different sizes, and improves gas sealing through sealing grooves and sealing rings.

Benefits of technology

It avoids the waste of etching gas, reduces production costs, improves the sealing performance and etching efficiency of the equipment, and ensures product quality and production efficiency.

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Abstract

The invention relates to the technical field of semiconductor etching, in particular to a plasma etching device which comprises a rack, a liftable lifting frame is arranged on the rack, a rotatable air supply main pipe is mounted on the lifting frame, a transverse pipe is arranged below the air supply main pipe, the transverse pipe is communicated with the air supply main pipe through a pipeline, and the transverse pipe is communicated with the air supply main pipe through the pipeline. A plurality of fixing pipes are fixed to the transverse pipe, a servo motor is installed on the lifting frame, and the air supply main pipe is in transmission connection with an output shaft of the servo motor through a transmission piece. When the device is used, a worker can adjust the number of the nozzles on the transverse pipe according to the size of a semiconductor wafer, so that the sprayed plasma etching gas just completely covers the wafer, the gas waste is avoided, and the cost is reduced.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor etching, in particular to a kind of plasma etching device. BACKGROUND

[0002] Semiconductor plasma etching device is the key equipment for accurately removing material to form the required pattern structure in semiconductor manufacturing process, high-energy ions and active radicals in plasma and semiconductor material surface occur chemical and physical reaction, realize the accurate removal of material, plasma is generated by gas ionization under the action of high-energy electric field or magnetic field, include positive ion, negative ion, electron and neutral radical, these high-energy particles have very high chemical activity, can occur reaction with the atom or molecule of semiconductor material surface, form volatile product, to realize material removal.

[0003] According to the search, the Chinese patent with publication number CN115513101A discloses a kind of plasma etching cleaning process, including: etching cavity;Base;Jet mechanism, by air inlet pipe and jet disc, air inlet pipe inside has coaxially arranged first air inlet cavity and second air inlet cavity, jet disc inside has uniform gas cavity, spiral air distribution pipe is arranged in uniform gas cavity, spiral air distribution pipe bottom is uniformly connected with a plurality of first jet pipe, jet disc bottom is connected with the second jet pipe corresponding to the first jet pipe;Gas supply system;Exhaust mechanism, the above-mentioned scheme can effectively increase the gas injection range, while different reaction gases can be realized synchronous injection between different injection points, effectively improve the reaction gas dispersion uniformity, to ensure that the uniform distribution of excited plasma, improve the etching quality; The above-mentioned patent still has some deficiencies in actual use, that is, the size of jet disc is fixed, and the position of nozzle cannot be adjusted, when processing small size semiconductor wafer, the jet pipe beyond wafer range will continue to spray etching gas, and these gases cannot act on wafer surface, not only cause the waste of etching gas, increase production cost, but also may cause adverse effects on equipment performance and service life due to the accumulation of excess gas in the equipment, even may interfere with the accuracy of etching process, affect the quality and production efficiency of final product.

[0004] Based on this, the present application discloses a kind of plasma etching device. SUMMARY

[0005] To solve the problem of poor versatility of the device in the background art, the application provides a plasma etching device, which comprises a rack, a lifter arranged on the rack, a rotatable gas supply main pipe installed on the lifter, a cross pipe arranged below the gas supply main pipe, a communication between the cross pipe and the gas supply main pipe through a pipeline, a plurality of fixed pipes fixed on the cross pipe, a servo motor installed on the lifter, and a transmission connection between the gas supply main pipe and the output shaft of the servo motor through a transmission part. Wherein, the inner surface of each fixed pipe is fixed with a magnetic attraction ring, the inner surface of each fixed pipe is provided with a sealing groove, each sealing groove is provided with a sealing ring, each fixed pipe is connected with a gas jet assembly, and the inside of each fixed pipe is provided with a plugging assembly; when the gas jet assembly is connected with the fixed pipe, the plugging assembly controls the fixed pipe to be in a conductive state. Wherein, a load assembly is arranged below the cross pipe for placing a semiconductor wafer, and the load assembly comprises a base, a rotating shaft I and a load table, the rotating shaft I is rotatably installed on the base, and the load table is fixed on the top end of the rotating shaft I. Since the semiconductor wafers to be processed have different sizes, the nozzle with adjustable position is adopted in the technical solution, so that the gas jetted from the plurality of nozzles can completely cover the semiconductor wafer. As a further improvement of the technical solution, the rotating shaft I, the load table and the gas supply main pipe are coaxially arranged.

[0006] The purpose is to ensure that the semiconductor wafer on the load table can maintain the position coaxial with the gas supply main pipe during rotation. As a further improvement of the technical solution, the gas jet assembly comprises a mounting pipe, the mounting pipe is inserted into the fixed pipe, a magnetic attraction ring II is fixed on one end of the mounting pipe, a connecting pipe is fixed on the other end of the mounting pipe, a nozzle is fixed on the end of the connecting pipe away from the mounting pipe for jetting plasma gas, a fixed plate is fixed inside the mounting pipe and located close to the magnetic attraction ring II, a top rod is fixed on the fixed plate and the end position of the top rod extends to the outside of the mounting pipe, and when the mounting pipe is inserted into the fixed pipe, the top rod just acts on the plugging assembly.

[0007] The mounting pipe and the fixed pipe are connected in a magnetic attraction mode, and the mounting pipe and the fixed pipe are connected when they are assembled in place, and the mounting pipe and the fixed pipe are connected when they are assembled in place. When the mounting pipe is not installed on the fixed pipe, the fixed pipe is blocked under the action of the plugging assembly, which makes only the fixed pipe with the mounting pipe installed can jet gas, and the remaining fixed pipes will not jet gas. As a further improvement of the technical solution, the plugging assembly comprises a bracket, the top of the bracket is provided with an air channel, the bottom surface is provided with an air port, and the air channel is opposite to the air port, a movable plugging piece is arranged on the bracket and is arranged between the air channel and the air port, and the plugging piece is connected with the bracket through a spring.

[0008] In order to enable the staff to flexibly adjust the position of the nozzle, the plugging assembly is used to control the conduction and closure of the fixed pipe.

[0009] As a further improvement of the technical solution, the top surface of the object table is fixed with a plurality of positioning rings, the plurality of positioning rings are concentrically arranged, the ring diameter of the plurality of positioning rings increases in the direction from the center to the outer edge of the object table, and the thickness of the plurality of positioning rings decreases in the direction from the outer edge to the center of the object table.

[0010] In order to ensure the coaxiality between the semiconductor wafer and the object table, a plurality of positioning rings with sizes matched with common semiconductor wafers are used, the ring diameter increases and the thickness decreases, and different sizes of semiconductor wafers can be accurately positioned; As a further improvement of the technical solution, each of the sealing rings is a hollow structure, two adjacent sealing rings are connected through a communication pipe, the two ends of the transverse pipe are arranged with air supply assemblies, the two air supply assemblies are respectively connected with the sealing rings at the two ends, and a guide assembly is arranged above the object table. The guide assembly comprises a mounting ring, the mounting ring is arranged above the object table, and the mounting ring and the object table are coaxially arranged, and the mounting ring is connected with the base through two connecting rods.

[0011] In order to improve the sealing performance of the connection between the mounting pipe and the fixed pipe, the sealing ring is arranged as a hollow structure, and the air supply assembly is used to supply air to the sealing ring, so that the sealing ring only presses the mounting pipe under the action of air pressure; As a further improvement of the technical solution, the inner ring of the mounting ring is provided with an upper convex lip and a lower convex lip, the upper convex lip and the lower convex lip are the same in shape, and the surfaces of the upper convex lip and the lower convex lip are both arc surfaces, and the upper convex lip and the lower convex lip have a spacing.

[0012] The upper convex lip and the lower convex lip enable the air supply assembly to perform the air supply action, and are used to ensure the stability when the transverse pipe rotates; As a further improvement of the technical solution, the sealing cylinder is fixed at the end of the cross rod, the end of the sealing cylinder away from the cross rod is open, a sliding plug is sealingly connected in the sealing cylinder, the sliding plug is connected with the sealing cylinder through a spring two, a fixed rod is fixed on the sliding plug, the end of the fixed rod away from the sliding plug extends to the outside of the sealing cylinder, and a gas supply pipe is connected to the sealing cylinder.

[0013] When the sealing cylinder moves down with the cross pipe, the fixed rod is just clamped between the upper and lower convex lips, and the sliding plug is moved, so that automatic gas supply is realized. As a further improvement of the technical solution, the output shaft of the servo motor is fixed with an elastic telescopic rod, the telescopic end of the elastic telescopic rod is fixed with a clamping block, a rotatable rotating shaft two is arranged below the elastic telescopic rod, a gear one is fixedly sleeved on the rotating shaft two, a gear two is fixedly sleeved on the rotating shaft one, the gear two is engaged with the gear one, and the top end of the rotating shaft two is provided with a clamping groove, and the clamping groove is opposite to the clamping block.

[0014] In order to improve the etching efficiency, the transmission structure of the rotating shaft two, the elastic telescopic rod and the clamping block is arranged, so that the semiconductor wafer can rotate in the opposite direction with the cross pipe during etching. As a further improvement of the technical solution, the rotating shaft two and the output shaft of the servo motor are coaxially arranged.

[0015] The purpose is to ensure the transmission stability between the two.

[0016] Compared with the prior art, the beneficial effects of the present application are: 1. The number of nozzles on the cross pipe can be adjusted according to the size of the semiconductor wafer, so that the ejected plasma etching gas can completely cover the wafer, avoiding gas waste and reducing cost. 2. The sealing groove and the sealing ring are arranged in the fixed pipe to ensure the sealing between the fixed pipe and the mounting pipe, avoid gas leakage, the sealing ring is a hollow structure, and the sealing effect is further improved by cooperation of the gas supply assembly and the guide assembly when the cross pipe is lowered to the working position. 3. When the lifting frame is lowered, the servo motor drives the rotating shaft two to rotate through the elastic telescopic rod, the clamping block and the clamping groove, and then drives the object table to rotate, the gas supply main pipe and the cross pipe rotate in the same direction, the rotating shaft two and the rotating shaft one rotate in opposite directions, so that the cross pipe and the semiconductor wafer on the object table rotate in opposite directions, the whole etching time is shortened, and the etching efficiency is improved. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 The overall structure of the present application is shown Figure 1 ; Figure 2 Structure diagram of the whole structure of the present application Figure 2 Figure 3 Structure diagram of two fixed rods clamped on the mounting ring Figure 4 Structure diagram of the cross pipe and several jet assemblies Figure 5 Structure diagram of the cross pipe, fixed pipe and jet assembly Figure 6 Structure diagram of the fixed pipe and jet assembly Figure 7 Structure diagram of the fixed pipe Figure 8 Structure diagram of the jet assembly Figure 9 Exploded structure diagram of the fixed pipe, magnetic ring one and plugging assembly Figure 10 Structure diagram of the elastic telescopic rod and rotating shaft two Figure 11 Structure diagram of the mounting ring Figure 12 Structure diagram of the Figure 10 Enlarged structure diagram of A of the

[0018] The meanings of the respective reference numerals in the drawings are as follows: 11, frame; 12, lifting frame; 13, air supply main pipe; 14, cross pipe; 15, fixed pipe; 151, magnetic ring one; 152, sealing groove; 153, sealing ring; 16, servo motor; 17, transmission member; 21, mounting pipe; 22, connecting pipe; 23, nozzle; 24, magnetic ring two; 25, fixed plate; 26, top rod; 31, support; 32, plugging piece; 33, spring one; 41, base; 42, rotating shaft one; 43, object table; 51, mounting ring; 511, upper convex lip edge; 512, lower convex lip edge; 52, connecting rod; 53, sealing cylinder; 54, sliding plug; 55, fixed rod; 56, spring two; 57, air supply pipe; 58, communication pipe; 61, elastic telescopic rod; 62, clamping block; 63, rotating shaft two; 64, clamping groove; 65, gear one; 66, gear two. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0020] ​Existing plasma etching machines cannot meet the production needs of chips of different sizes. At the same time, when processing smaller semiconductor chips, the nozzles beyond the chip range will continue to spray etching gas, and these gases cannot act on the chip surface, which not only causes waste of etching gas and increases production costs, but also may cause excess gas to accumulate inside the equipment.

[0021] To this end, the present invention provides a plasma etching device, see Figure 1 As shown, it includes a frame 11, a lift frame 12 that can be raised and lowered is provided on the frame 11, a rotatable gas supply pipe 13 is installed on the lift frame 12, a transverse pipe 14 is arranged below the gas supply pipe 13, and the transverse pipe 14 and the gas supply pipe 13 are connected through a pipeline, a plurality of fixed pipes 15 are fixed on the transverse pipe 14, a servo motor 16 is installed on the lift frame 12, the gas supply pipe 13 and the output shaft of the servo motor 16 are connected through a transmission member 17, a rotary joint is installed on the top of the gas supply pipe 13, and an air pipe for providing etching gas is connected to the rotary joint. The design of the rotary joint allows the gas supply pipe 13 and the air pipe to rotate relative to each other. Because the gas supply pipe 13 is in a rotating state during the etching process, this design can prevent the air pipe from being entangled on the rotating gas supply pipe 13; See also Figure 1 、 2 3, wherein a carrier assembly is arranged below the transverse tube 14 for placing semiconductor wafers, and the carrier assembly includes a base 41, a rotating shaft 42 and a carrier 43. The rotating shaft 42 is rotatably mounted on the base 41, and the carrier 43 is fixed to the top of the rotating shaft 42. The rotating shaft 42, the carrier 43 and the gas supply main pipe 13 are coaxially arranged. A plurality of positioning rings are fixed to the top surface of the carrier 43. The plurality of positioning rings are concentrically arranged. In the direction from the center to the outer edge of the carrier 43, the ring diameters of the plurality of positioning rings increase, and in the direction from the outer edge to the center of the carrier 43, the thicknesses of the plurality of positioning rings decrease. The staff places the semiconductor wafer to be processed on the stage 43. Several positioning rings are fixed on the stage 43. The ring diameters of the positioning rings increase from the center to the outer edge of the stage 43, and the thicknesses of the positioning rings decrease from the outer edge to the center of the stage 43. This enables the positioning rings to provide positioning for the semiconductor wafer. The staff can place the semiconductor wafer in the positioning ring that matches its size. At this time, the outer edge of the semiconductor wafer just contacts the positioning ring to ensure that the semiconductor wafer and the stage 43 remain coaxial. In addition, by providing multiple positioning rings, semiconductor wafers of different sizes can be positioned. The size of the positioning rings matches the size of common semiconductor wafers. See also Figure 6 、 9As shown in the figure, the inner surface of each fixed tube 15 is fixed with a magnetic ring 151, and the inner surface of each fixed tube 15 is provided with a sealing groove 152, and a sealing ring 153 is arranged in each sealing groove 152. In order to ensure the sealing between the fixed tube 15 and the mounting tube 21, the sealing groove 152 is arranged in the fixed tube 15, and the sealing ring 153 is arranged in the sealing groove 152. Figure 6 And Figure 9 As shown in the figure, the sealing groove 152 is arranged with a sealing ring 153, and when the mounting tube 21 is inserted into the fixed tube 15, the sealing ring 153 is tightly pressed against the mounting tube 21, so as to ensure the sealing between the fixed tube 15 and the mounting tube 21, and avoid the gas leakage; As shown in the figure, Figure 8 Each fixed tube 15 is connected with a gas jet assembly, which comprises a mounting tube 21, the mounting tube 21 is inserted into the fixed tube 15, one end of the mounting tube 21 is fixed with a magnetic ring 24, the other end is fixed with a connecting tube 22, and the end of the connecting tube 22 away from the mounting tube 21 is fixed with a nozzle 23 for jetting plasma gas. After placing the semiconductor wafer, the number of nozzles 23 on the cross tube 14 is adjusted according to the size of the semiconductor wafer, so that the plasma etching gas jetted by the nozzles 23 can completely cover the semiconductor wafer, so that the device can process semiconductor wafers of different sizes, and the gas waste phenomenon does not occur; As shown in the figure, Figure 6 , 7 The mounting tube 21 is fixed with a fixed plate 25, and the fixed plate 25 is located near the magnetic ring 24, and the fixed plate 25 is fixed with a top rod 26, and the end of the top rod 26 extends to the outside of the mounting tube 21. The inside of each fixed tube 15 is provided with a plugging assembly, and the plugging assembly controls the fixed tube 15 to be in a conductive state when the gas jet assembly is connected with the fixed tube 15. When the mounting tube 21 is inserted into the fixed tube 15, the top rod 26 acts on the plugging assembly. The plugging assembly comprises a bracket 31, the top of the bracket 31 is provided with an air channel, the bottom surface is provided with an air port, and the air channel is opposite to the air port. The bracket 31 is provided with a movable baffle 32, and the baffle 32 is arranged between the air channel and the air port, and the baffle 32 is connected with the bracket 31 through a spring 33. In the initial state, the blocking piece 32 is blocked under the action of the spring 33. Specifically, when the nozzle 23 is installed, the staff directly inserts the installation pipe 21 on the nozzle 23 into the fixed pipe 15. The fixed pipe 15 is internally provided with a magnetic ring 151, and the installation pipe 21 is fixed with a magnetic ring 24. When the installation pipe 21 is inserted into the fixed pipe 15, the magnetic ring 151 and the magnetic ring 24 are in contact with each other and are attracted to each other. The installation pipe 21 is fixed in the fixed pipe 15 by magnetic attraction, which can realize the rapid installation of the nozzle 23. In addition, when the installation pipe 21 is assembled in place, the top rod 26 will lift the blocking piece 32, so that the blocking piece 32 moves towards the direction of the gas passage. When the blocking piece 32 is lifted, the blocking piece 32 no longer blocks the gas port, so that the gas in the horizontal pipe 14 can enter the installation pipe 21 through the fixed pipe 15, as shown in Figure 6 When the installation pipe 21 is assembled in place, the installation pipe 21 and the fixed pipe 15 are in communication, so that the gas is sprayed out through the nozzle 23. For the fixed pipe 15 without the installation pipe 21, the blocking piece 32 in it will be pressed against the support 31 under the elastic force of the spring 33. At this time, the blocking piece 32 will block the gas port, and the gas in the horizontal pipe 14 cannot be sprayed out from the fixed pipe 15. In summary, the staff only needs to install the nozzle 23 by plugging and unplugging; Based on the above process, the staff can adjust the number and position of the nozzle 23 according to the size of the semiconductor wafer, which can ensure that the device can process semiconductor wafers of different sizes and avoid gas waste; After adjusting the position of the nozzle 23, the staff controls the lifting frame 12 to move downward. When the lifting frame 12 moves downward, it drives the horizontal pipe 14 to move downward, so that the horizontal pipe 14 approaches the semiconductor wafer. During etching, etching gas enters the gas supply main pipe 13, then enters the horizontal pipe 14, and finally is sprayed out through the nozzles 23. In this process, the staff starts the servo motor 16. When the servo motor 16 operates, it can drive the gas supply main pipe 13 to rotate through the transmission member 17, which makes the horizontal pipe 14 slowly rotate, so as to etch the semiconductor wafer; Referring to Figure 3 , 11As shown, each sealing ring 153 is a hollow structure, and two adjacent sealing rings 153 are communicated through the communication pipe 58. The two ends of the horizontal pipe 14 are provided with gas supply assemblies, and the two gas supply assemblies are communicated with the sealing rings 153 at the two ends respectively. The upper portion of the object table 43 is provided with a guide assembly. The guide assembly comprises a mounting ring 51 arranged above the object table 43 and coaxially arranged between the mounting ring 51 and the object table 43. The mounting ring 51 is connected to the base 41 through two connecting rods 52. The inner ring of the mounting ring 51 is provided with an upper convex lip 511 and a lower convex lip 512. The upper convex lip 511 and the lower convex lip 512 are the same shape, and the surfaces of the upper convex lip 511 and the lower convex lip 512 are both arc surfaces. The upper convex lip 511 and the lower convex lip 512 have a spacing therebetween. In the initial state, as shown, Figure 1 As shown, the horizontal pipe 14 is located above the mounting ring 51. As shown, Figure 4 、 5 As shown, the gas supply assembly comprises a sealing cylinder 53 fixed at the end of the horizontal rod. The end of the sealing cylinder 53 away from the horizontal rod is open. A sliding plug 54 is slidingly connected in the sealing cylinder 53, and the sliding plug 54 and the sealing cylinder 53 are connected through a spring 56. A fixed rod 55 is fixed on the sliding plug 54, and the end of the fixed rod 55 away from the sliding plug 54 extends to the outside of the sealing cylinder 53. A gas supply pipe 57 is communicated with the sealing cylinder 53. The end of the gas supply pipe 57 away from the sealing cylinder 53 is communicated with the corresponding sealing ring 153. In order to further improve the sealing between the fixed pipe 15 and the mounting pipe 21, the sealing ring 153 is designed as a hollow structure, and a gas supply assembly and a guide assembly are arranged, so that when the lifting frame 12 drives the cross pipe 14 to descend, the gas supply assembly and the guide assembly cooperate with each other to inflate the sealing ring 153, and under the action of the gas pressure, the sealing effect of the sealing ring 153 on the sealing between the fixed pipe 15 and the mounting pipe 21 is further improved. Specifically, before etching, the cross pipe 14 is lowered, and in this process, the fixed rod 55 in the gas supply assembly first contacts the upper convex lip edge 511 and moves along the upper convex lip edge 511 with an arc surface. When the cross pipe 14 is lowered to the working position, the fixed rod 55 is located between the upper convex lip edge 511 and the lower convex lip edge 512, and under the action of the upper convex lip edge 511 and the lower convex lip edge 512, the fixed rod 55 drives the sliding plug 54 to move. When the sliding plug 54 moves, the gas in the sealing cylinder 53 can be pressed into the corresponding sealing ring 153 through the gas supply pipe 57, and the adjacent two sealing rings 153 are connected through the communication pipe 58. This makes the gas sequentially fill the sealing rings 153. In summary, when the cross pipe 14 is lowered to the working position, the two gas supply assemblies simultaneously perform the gas supply action, so that the sealing rings 153 are filled with gas. The gas pressure can tightly press the sealing ring 153 against the mounting pipe 21, thereby improving the sealing between the fixed pipe 15 and the mounting pipe 21. In addition, during the rotation of the cross pipe 14, the two fixed rods 55 slide between the upper convex lip edge 511 and the lower convex lip edge 512. At this time, the upper convex lip edge 511 and the lower convex lip edge 512 provide a limit for the two fixed rods 55, so that the two fixed rods 55 can only move in a horizontal plane and cannot be offset in the vertical direction, thereby improving the rotation stability of the cross pipe 14 and further improving the etching effect of the device on the semiconductor wafer. Referring to Figure 3 、 10 , as shown in FIG. 12, the output shaft of the servo motor 16 is fixed with an elastic telescopic rod 61, the telescopic end of the elastic telescopic rod 61 is fixed with a clamping block 62, the lower part of the elastic telescopic rod 61 is arranged with a rotatable second rotating shaft 63, the second rotating shaft 63 is fixedly sleeved with a gear one 65, the first rotating shaft 42 is fixedly sleeved with a gear two 66, the gear two 66 is engaged with the gear one 65, the top end of the second rotating shaft 63 is provided with a clamping groove 64, and the clamping groove 64 is opposite to the clamping block 62, the cross section of the clamping block 62 and the clamping groove 64 are both rectangular structures, and the coaxial line between the second rotating shaft 63 and the output shaft of the servo motor 16 is arranged. In order to improve the working efficiency of the device, the structure for driving the rotation of the object table 43 is designed. Specifically, when the lifting frame 12 moves downward, the servo motor 16 mounted on the lifting frame 12 moves downward and drives the elastic telescopic rod 61 to move downward, as Figure 2 、 3As shown in FIGS. 10 and 11, the telescopic end of the elastic telescopic rod 61 is fixed with a clamping block 62, which moves towards the direction of the rotating shaft two 63, the cross section of the clamping block 62 and the clamping groove 64 are both rectangular structures, in this process, the clamping block 62 and the clamping groove 64 have two position states, first, the clamping block 62 is completely aligned with the clamping groove 64, so that the clamping block 62 is inserted into the slot when it moves down, second, there is a misalignment between the clamping block 62 and the clamping groove 64, in this case, the clamping block 62 will press on the top end of the rotating shaft two 63 when it moves down, and the telescopic end of the elastic telescopic rod 61 will retract, in the first case, the servo motor 16 can directly drive the rotating shaft two 63 to rotate through the elastic telescopic rod 61, the clamping block 62 and the clamping groove 64 when it drives the cross pipe 14 to rotate, in the second case, the servo motor 16 can also drive the rotating shaft two 63 to rotate when it drives the cross pipe 14 to rotate, the clamping block 62 can be clamped into the clamping groove 64 under the elastic force of the elastic telescopic rod 61 when the clamping block 62 rotates to the position opposite to the clamping groove 64, therefore, the servo motor 16 can still drive the rotating shaft two 63 to rotate in this case, in summary, no matter how the relative position of the clamping block 62 and the clamping groove 64 is, the servo motor 16 can drive the rotating shaft two 63 to rotate when it drives the cross pipe 14 to rotate, the rotating shaft two 63 and the rotating shaft one 42 are in transmission connection through the gear one 65 and the gear two 66 which are in mesh with each other, therefore, the rotating shaft one 42 rotates along with the rotating shaft two 63 when the rotating shaft two 63 rotates, and drives the object table 43 to rotate, it is worth mentioning that the servo motor 16 and the gas supply main pipe 13 are in transmission connection through the transmission member 17, which makes the rotating direction of the gas supply main pipe 13 the same as the running direction of the servo motor 16, and the rotating direction of the rotating shaft two 63 is also the same as the running direction of the servo motor 16, but the rotating shaft one 42 and the rotating shaft two 63 are in transmission through two gears, which makes the rotating direction of the rotating shaft one 42 opposite to that of the rotating shaft two 63, that is to say, the rotating direction of the cross pipe 14 is also opposite to that of the rotating shaft one 42, in this case, the cross pipe 14 and the semiconductor wafer on the object table 43 can rotate in opposite directions, compared with the case that the cross pipe 14 rotates and the object table 43 is static, this can shorten the overall etching time of the semiconductor wafer, thereby improving the etching efficiency of the semiconductor wafer.

[0022] It should be noted that, in this document, the terms such as first and second are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between such entities or operations. In addition, the terms "comprising", "containing" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment.

[0023] While embodiments of the application have been shown and described, it is to be understood that the embodiments described are merely exemplary of the principles and application of the present application. Numerous modifications and adaptions can be effected without departing from the spirit and scope of the present application, which is not limited to the exact construction and arrangement described. It is intended, therefore, to cover all modifications and adaptions that fall within the scope of the claims and their equivalents.

Claims

1. A plasma etching device, characterized in that: The utility model comprises a frame (11), a lifting frame (12) capable of lifting and lowering is provided on the frame (11), a rotatable air supply pipe (13) is installed on the lifting frame (12), a transverse pipe (14) is arranged below the air supply pipe (13), and the transverse pipe (14) and the air supply pipe (13) are connected through a pipeline, a plurality of fixed pipes (15) are fixed on the transverse pipe (14), a servo motor (16) is installed on the lifting frame (12), and the air supply pipe (13) and the output shaft of the servo motor (16) are connected through a transmission member (17); Wherein, a magnetic ring (151) is fixed on the inner surface of each fixed tube (15), a sealing groove (152) is opened on the inner surface of each fixed tube (15), a sealing ring (153) is provided in each sealing groove (152), each fixed tube (15) is connected to an injection assembly, and a blocking assembly is provided inside each fixed tube (15), and when the injection assembly is connected to the fixed tube (15), the blocking assembly controls the fixed tube (15) to be in a conducting state; A carrier assembly is arranged below the transverse tube (14) for placing semiconductor chips. The carrier assembly includes a base (41), a rotating shaft (42) and a carrier (43). The rotating shaft (42) is rotatably mounted on the base (41), and the carrier (43) is fixed to the top of the rotating shaft (42).

2. The plasma etching device according to claim 1, wherein: The rotating shaft 1 (42), the loading platform (43) and the air supply main pipe (13) are arranged coaxially.

3. The plasma etching device according to claim 2, wherein: The jet assembly includes a mounting tube (21), which is inserted into the fixed tube (15). One end of the mounting tube (21) is fixed with a second magnetic ring (24), and the other end is fixed with a connecting tube (22). The end of the connecting tube (22) away from the mounting tube (21) is fixed with a nozzle (23) for spraying plasma gas. A fixing plate (25) is fixed inside the mounting tube (21), and the fixing plate (25) is located near the second magnetic ring (24). A push rod (26) is fixed on the fixing plate (25), and the end position of the push rod (26) extends to the outside of the mounting tube (21). When the mounting tube (21) is inserted into the fixed tube (15), the push rod (26) just acts on the blocking assembly.

4. The plasma etching device according to claim 3, wherein: The blocking component includes a bracket (31), an airway is provided on the top of the bracket (31), an air port is provided on the bottom, and the airway is arranged opposite the air port. A movable blocking piece (32) is provided on the bracket (31), and the blocking piece (32) is placed between the airway and the air port. The blocking piece (32) is connected to the bracket (31) through a spring (33). In an initial state, the blocking piece (32) blocks the air port under the action of the spring (33).

5. The plasma etching device according to claim 4, wherein: A plurality of positioning rings are fixed to the top surface of the loading platform (43), and the positioning rings are concentrically arranged. In the direction from the center to the outer edge of the loading platform (43), the ring diameters of the positioning rings increase, and in the direction from the outer edge to the center of the loading platform (43), the thicknesses of the positioning rings decrease.

6. The plasma etching device according to any one of claims 1 to 5, characterized in that: Each of the sealing rings (153) is a hollow structure, and two adjacent sealing rings (153) are connected via a connecting pipe (58). Air supply components are arranged at both ends of the transverse tube (14), and the two air supply components are respectively connected to the sealing rings (153) located at both ends. A guide component is arranged above the loading platform (43); The guide assembly includes a mounting ring (51), which is arranged above the stage (43) and is coaxially arranged with the stage (43). The mounting ring (51) is connected to the base (41) via two connecting rods (52).

7. The plasma etching device according to claim 6, wherein: The inner ring of the mounting ring (51) is provided with an upper convex lip edge (511) and a lower convex lip edge (512), the upper convex lip edge (511) and the lower convex lip edge (512) have the same shape, and the surfaces of the upper convex lip edge (511) and the lower convex lip edge (512) are both arc surfaces, and there is a distance between the upper convex lip edge (511) and the lower convex lip edge (512).

8. The plasma etching device according to claim 7, wherein: The air supply assembly includes a sealing cylinder (53), which is fixed at the end position of the cross bar. The end of the sealing cylinder (53) away from the cross bar is open. The sealing cylinder (53) is sealed and slidably connected to a sliding plug (54) inside, and the sliding plug (54) and the sealing cylinder (53) are connected by a spring 2 (56). A fixing rod (55) is fixed on the sliding plug (54), and the end of the fixing rod (55) away from the sliding plug (54) extends to the outside of the sealing cylinder (53). The sealing cylinder (53) is connected to an air supply pipe (57), and the end of the air supply pipe (57) away from the sealing cylinder (53) is connected to a sealing ring (153) at a corresponding position.

9. The plasma etching device according to claim 1, wherein: The output shaft of the servo motor (16) is fixed with an elastic telescopic rod (61), and the telescopic end of the elastic telescopic rod (61) is fixed with a clamping block (62). A rotatable rotating shaft 2 (63) is arranged below the elastic telescopic rod (61). A fixed sleeve on the rotating shaft 2 (63) is provided with a gear 1 (65), and a fixed sleeve on the rotating shaft 1 (42) is provided with a gear 2 (66), and the gear 2 (66) is meshed with the gear 1 (65). A clamping slot (64) is provided at the top end of the rotating shaft 2 (63), and the clamping slot (64) is arranged opposite to the clamping block (62). The cross-sections of the clamping block (62) and the clamping slot (64) are both rectangular structures.

10. The plasma etching device according to claim 9, wherein: The second rotating shaft (63) is coaxially arranged with the output shaft of the servo motor (16).

Citation Information

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