Switch assembly and conductive structure

Abstract

The invention provides a switch assembly and a conductive structure, the switch assembly comprises a series substrate, and the series substrate is provided with a first flow path for current circulation; at least two switch substrates, wherein each switch substrate is provided with a second flow path for current circulation; the second flow path of each switch substrate is communicated with the first flow path; at least one switch component is arranged on each switch substrate; the switch component is used for controlling the connection and disconnection of the second flow path; wherein the switch substrate is provided with a connecting part used for installing the switch component, and the connecting part and the series substrate are arranged in a spaced mode. According to the switch assembly, the problem that the parasitic inductance of a series switch of a semiconductor switch in the related technology is relatively high is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor switch, in particular to a switch assembly and a conductive structure. BACKGROUND

[0002] Semiconductor switches are gradually replacing gas switches to become discharge switches of pulse power devices, but the working voltage of semiconductor switches is lower than that of gas switches, and multiple levels are required to be used in series to meet the voltage withstand requirement. The parasitic inductance of the series switch module realized by using the traditional power module packaging structure is large, which cannot meet the fast front requirement in the pulse power application. Some advanced packaging forms can realize low parasitic inductance, but the process and equipment requirements are higher.

[0003] Therefore, the existing semiconductor switch has the problem of strong parasitic inductance of the series switch. SUMMARY

[0004] The present application aims to overcome the above technical deficiencies, and provides a switch assembly and a conductive structure. In order to achieve the above technical purpose, the present application adopts the following technical scheme: a switch assembly is provided, comprising: a series substrate, the series substrate is provided with a first flow path for current flow; at least two switch substrates, each of the switch substrates is provided with a second flow path for current flow; the second flow path of each switch substrate and the first flow path are in communication; at least one switch component is provided on each switch substrate; the switch component is used to control the communication and disconnection of the second flow path; wherein the switch substrate is provided with a connecting portion for mounting the switch component, and the connecting portion is spaced apart from the series substrate.

[0005] Further, the extension direction of the series substrate and the extension direction of the switch substrate are different; and / or, the at least two switch substrates are spaced apart, and the adjacent two switch substrates have a containing space for mounting the switch substrate.

[0006] Further, the connecting portion is provided with a first conductive material; the side of the switch substrate away from the connecting portion is provided with a second conductive material; the switch substrate is provided with a first via hole; the first conductive material and the second conductive material are connected with each other through the first via hole; the first conductive material and the second conductive material are connected with the series substrate respectively.

[0007] Further, the first via hole is a plurality of first via holes, and the plurality of first via holes are spaced apart.

[0008] Further, one end of the switch substrate is connected with the series substrate; the other end of the switch substrate extends away from the series substrate.

[0009] Further, the switch assembly comprises a connecting structure; the connecting structure is connected with the switch substrate; the connecting structure is connected with the series substrate.

[0010] Further, the connecting structure comprises an insulating part, the insulating part is attached with the switch substrate, and the insulating part is connected with the series substrate.

[0011] Further, the switch part further comprises a first conductive surface and a second conductive surface arranged oppositely; the connecting structure comprises a first connecting part and a second connecting part; the first connecting part is connected with the first conductive surface and the series substrate; the second connecting part is connected with the second conductive surface and the series substrate.

[0012] Further, the first connecting part is parallel to the switch substrate; the first connecting part is attached with the first conductive surface, and one end of the first connecting part is connected with the series substrate; the second connecting part has a first connecting plate attached with the second conductive surface and a second connecting plate attached with the series substrate; the first connecting plate is parallel to the switch substrate, and the second connecting plate is parallel to the series substrate.

[0013] A conductive structure comprises: the switch assembly as described above; a shell, the shell has an inner; the switch part of the switch assembly is located in the inner; the inner is provided with a filling material, so as to encapsulate the switch part and the switch substrate of the switch assembly in the filling material.

[0014] Advantages: The switch assembly comprises a series substrate, the series substrate is provided with a first flow path for current flow; at least two switch substrates, each of the switch substrates is provided with a second flow path for current flow; the second flow path of each of the switch substrates is in communication with the first flow path; at least one switch part is arranged on each of the switch substrates; the switch part is used for controlling the communication and disconnection of the second flow path; wherein, the switch substrate is provided with a connecting part for mounting the switch part, and the connecting part is arranged in a spaced manner with the series substrate. The switch assembly solves the problem of strong parasitic inductance of the series switch in the related art. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 is a structural schematic diagram of the switch assembly adopted by the embodiment of the present application; Figure 2 is a structural schematic diagram of the conductive structure adopted by the embodiment of the present application; Figure 3 is a structural schematic diagram of the switch substrate adopted by the embodiment of the present application.

[0016] wherein the above figures include the following reference signs: 10, series substrate; 20, switch substrate; 22, switch component; 23, connecting part; 31, first conductive material; 32, second conductive material; 33, first via hole; 331, second via hole; 40, connecting structure; 41, insulating component; 51, first conductive surface; 52, second conductive surface; 53, first connecting component; 54, second connecting component; 55, first connecting plate; 56, second connecting plate; 60, housing; 62, filling material; 100, switch assembly. DETAILED DESCRIPTION

[0017] In order to enable persons skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by persons skilled in the art without creative labor should fall within the scope of protection of the present application.

[0018] Reference is made to Figures 1 to 3 According to the embodiment of the present application, a switch assembly is provided, which comprises a series substrate 10, wherein the series substrate 10 is provided with a first flow path for current flow; at least two switch substrates 20, wherein each of the switch substrates 20 is provided with a second flow path for current flow; the second flow path of each of the switch substrates 20 is in communication with the first flow path; at least one switch component 22 is arranged on each of the switch substrates 20; the switch component 22 is used for controlling the communication and disconnection of the second flow path; wherein the switch substrate 20 is provided with a connecting part 23 for mounting the switch component 22, and the connecting part 23 is arranged in a spaced manner with the series substrate 10.

[0019] Specifically, in actual use, the substrate dielectric thickness H should meet the voltage withstand requirement, the electrolyte thickness of the switch substrate meets the voltage withstand requirement of a single high-voltage switch, and the minimum thickness is D, and the dielectric layer thickness of the series substrate needs to meet the total voltage withstand requirement of the series switch. For the structure of n high-voltage switches in series, the minimum thickness of the series substrate is nD. The dielectric thickness H and the substrate length L jointly determine the switch current loop area, thereby affecting the parasitic inductance, thereby affecting the switch front edge. The greater the thickness H, the greater the parasitic inductance. In the existing research, the series is generally realized by a planar low-inductance structure, that is, there is only one substrate, which serves as both a switch substrate and a series substrate. The substrate thickness needs to meet the total voltage withstand requirement of the series switch, and the minimum thickness of the substrate dielectric is H=nD. The length is mainly determined by the switch structure and the number, thereby causing the substrate to be too thick and too long in the prior art, which can generate a very high parasitic inductance.

[0020] In the embodiment, the switch component 22 is arranged on the connecting part 23, and the connecting part 23 is spaced from the series substrate 10, thereby reducing the burden of the series substrate 10, and the size of the series substrate 10 can be shortened, and the parasitic inductance is reduced.

[0021] Referring to Figures 1 to 3 In the switch assembly of the embodiment, the extension direction of the series substrate 10 is different from the extension direction of the switch substrate 20; and / or, at least two switch substrates 20 are arranged spacedly, and the adjacent two switch substrates 20 have a containing space for mounting the switch substrate 20.

[0022] With the above arrangement, the series substrate 10 and the switch substrate 20 are non-parallel, thereby providing a larger arrangement space for the switch substrate 20, and the size of the series substrate 10 is reduced. The containing space provides a position for arranging the switch component 22, and can provide a heat dissipation gap for the adjacent switch substrate 20, thereby avoiding heat accumulation.

[0023] In the switch assembly of the embodiment, referring to Figures 1 to 3 , the connecting part 23 is provided with a first conductive material 31; the side of the switch substrate 20 away from the connecting part 23 is provided with a second conductive material 32; the switch substrate 20 is provided with a first via 33; the first conductive material 31 and the second conductive material 32 are connected with each other through the first via 33; and the first conductive material 31 and the second conductive material 32 are connected with the series substrate 10 respectively.

[0024] Specifically, the first conductive material 31 and the second conductive material 32 are connected vertically through the first via 33, thereby forming a low-impedance path.

[0025] Referring to Figures 1 to 3 In the switch assembly of the embodiment, the first via 33 is a plurality of first vias 33, and the plurality of first vias 33 are arranged spacedly.

[0026] With the above arrangement, the plurality of spaced first vias 33 disperse the current density, reduce local heating, and improve reliability.

[0027] In the switch assembly of the embodiment, referring to Figures 1 to 3 , one end of the switch substrate 20 is connected with the series substrate 10; and the other end of the switch substrate 20 extends away from the series substrate 10.

[0028] With the above arrangement, the switch substrate 20 extends away from the series substrate 10, thereby expanding the mounting space of the switch component 22.

[0029] Specifically, the switch substrate 20 only needs to bear the voltage resistance of a single switch, the dielectric thickness is only D, the thickness of the series substrate is nD, but the length is short, which does not significantly increase the substrate length L, reduces the substrate thickness, reduces the current loop area, and thus realizes low parasitic inductance.

[0030] Referring to Figures 1 to 3 In the switch assembly of the embodiment, the switch assembly comprises a connecting structure 40; the connecting structure 40 is connected with the switch substrate 20; and the connecting structure 40 is connected with the series substrate 10.

[0031] With the above arrangement, the strength of the connection between the switch substrate 20 and the series substrate 10 can be enhanced. Thus, the thickness of each plate body can be reduced, thereby reducing the parasitic inductance.

[0032] Referring to Figures 1 to 3 In the switch assembly of the embodiment, the connecting structure 40 comprises an insulating component 41, the insulating component 41 is attached to the switch substrate 20, and the insulating component 41 is connected with the series substrate 10.

[0033] The insulating component 41 of the connecting structure 40 isolates the switch substrate 20 from the series substrate 10, preventing breakdown.

[0034] In the switch assembly of the embodiment, referring to Figures 1 to 3 The switch component 22 further comprises a first conductive surface 51 and a second conductive surface 52 arranged oppositely; the connecting structure 40 comprises a first connecting component 53 and a second connecting component 54; the first connecting component 53 is connected with the first conductive surface 51 and the series substrate 10; and the second connecting component 54 is connected with the second conductive surface 52 and the series substrate 10. In this way, the connection between the switch substrate 20 and the series substrate 10 on the opposite sides is strengthened. Thus, the thickness of each plate body can be reduced, thereby reducing the parasitic inductance.

[0035] In the switch assembly of the embodiment, referring to Figures 1 to 3 The first connecting component 53 is parallel to the switch substrate 20; the first connecting component 53 is attached to the first conductive surface 51, one end of the first connecting component 53 is connected with the series substrate 10; the second connecting component 54 has a first connecting plate 55 attached to the second conductive surface 52 and a second connecting plate 56 attached to the series substrate 10; the first connecting plate 55 is parallel to the switch substrate 20, and the second connecting plate 56 is parallel to the series substrate 10.

[0036] In this way, the occupied area of the plate body on one side of the switch component 22 can be reduced, thereby reducing the size of the switch substrate 20.

[0037] A conductive structure comprises the switch assembly 100 described above; a housing 60, the housing 60 having; the switch components 22 of the switch assembly 100 located in the housing; the housing being provided with a filling material 62 to encapsulate the switch components 22 and the switch substrate 20 of the switch assembly 100 in the filling material.

[0038] Embodiment one The present application provides a low-inductance packaging structure of series high-voltage semiconductor switches, which comprises a switch substrate 20, a series substrate 10, an I-shaped copper sheet connecting piece, an L-shaped copper sheet connecting piece, an L-shaped insulating paper, a filling material, a housing 60, and high-voltage semiconductor switches. The high-voltage switches can be discrete devices in the form of standard packaging of patches or bare chips. The structure can realize series connection of n-level (n≥2) high-voltage semiconductor switches, achieve low parasitic inductance while achieving high withstand voltage, and can be used in high-voltage, fast-front pulse generating devices.

[0039] Referring to Figures 1 to 3 , the first connecting piece 53 is an I-shaped copper sheet connecting piece, the second connecting piece 54 is an L-shaped copper sheet connecting piece, and the insulating piece 41 is an L-shaped insulating paper. The L-shaped copper sheet connecting piece is used to press the L-shaped insulating paper on the series substrate 10 and the switch substrate 20, so that the structure is more reasonable.

[0040] Embodiment two The packaging structure is shown in Figure 3 , the high-voltage switches are welded on the switch substrate 20, and a plurality of switch substrates 20 are welded on the side surface of the series substrate through the connecting pieces. The connected substrate is placed in the housing, and the filling material is poured into the housing to form a switch module.

[0041] The switch substrate 20 is at least a two-layer structure, which can be a PCB board or a DBC board. The copper foil on the upper surface is drawn according to the shape of the high-voltage switch, and the high-voltage switch is welded on the pad. The copper foil on the upper surface is connected to the copper foil on the lower surface through a large number of holes in the pad (first via hole 33). The I-shaped copper sheet connecting piece on the upper surface is welded to the series substrate, and the L-shaped insulating paper is placed at the contact position between the lower surface of the switch substrate 20 and the series substrate. The lower surface copper foil is welded to the series substrate through the L-shaped copper sheet. The series substrate has copper foils on both sides. The copper foil on the switch side is discontinuous and is disconnected at the position of the switch substrate 20. The copper foil on the reflow side is continuous, and finally the copper foil on the switch side of the series substrate under the last switch substrate 20 is connected to the copper foil on the reflow side through the second via hole 331.

[0042] Embodiment three Referring to Figure 1 Figure 3In the embodiment, the first via hole 33 is multiple, and the multiple via holes are arranged at intervals. The inner diameter of the first via hole 33 close to the series substrate 10 gradually increases. Thus, when the current is small, the current is concentrated through the larger via hole, thereby reducing the current flow path, thereby reducing the loss of electric energy.

[0043] In some embodiments, the greater the spacing between different first via holes 33 close to the series substrate 10, thereby ensuring the balance of the overall current flow when the current is large, avoiding local heating.

[0044] Embodiment four The conductive structure of the embodiment connects the 8-level Mos control thyristor switch of the TOLL package in series, the single switch working voltage is 2kV, the total working voltage after series connection is 16kV, a double-sided PCB board is used as a substrate, the dielectric thickness of the switch substrate 20 is 0.15mm, and the dielectric thickness of the series substrate is 0.6mm. The parasitic inductance after series connection of the plane low-inductance structure is 16.32nH, and the parasitic inductance after series connection of the low-inductance structure proposed in the application is 9.71nH.

[0045] It should be noted that the terms "first", "second" and the like in the description and claims of the application and the above-mentioned accompanying drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0046] Optionally, the specific examples in the embodiment can refer to the examples described in the above embodiments, and the embodiment will not be described here.

[0047] The above-mentioned serial numbers of the embodiments of the application are only for description, and do not represent the advantages and disadvantages of the embodiments.

[0048] In the above-mentioned embodiments of the application, the description of each embodiment has its own emphasis, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0049] The above-mentioned only is the preferred embodiment of the application, it should be pointed out, for ordinary skilled in the art, without departing from the principle of the application, can make a number of improvements and refinements, these improvements and refinements also should be regarded as the protection scope of the application.

Claims

1. A switch assembly, characterized in that: include: A series connection substrate (10), wherein a first flow path for current flow is provided on the series connection substrate (10); At least two switch substrates (20), each of the switch substrates (20) being provided with a second flow path for current flow; the second flow path of each of the switch substrates (20) being connected to the first flow path; each of the switch substrates (20) being provided with at least one switch component (22); the switch component (22) being used to control the connection and disconnection of the second flow path; Wherein, a connecting portion (23) for mounting the switch component (22) is provided on the switch substrate (20), and the connecting portion (23) is spaced apart from the series connection substrate (10).

2. The switch assembly according to claim 1, wherein: The extension direction of the series connection substrate (10) is different from the extension direction of the switch substrate (20); and / or, At least two of the switch substrates (20) are arranged at intervals, and an accommodation space for installing the switch substrates (20) is provided between two adjacent switch substrates (20).

3. The switch assembly according to claim 1, wherein: A first conductive material (31) is provided on the connecting portion (23); a second conductive material (32) is provided on a side of the switch substrate (20) away from the connecting portion (23); a first via hole (33) is provided on the switch substrate (20); the first conductive material (31) and the second conductive material (32) are connected to each other through the first via hole (33); and the first conductive material (31) and the second conductive material (32) are respectively connected to the series connection substrate (10).

4. The switch assembly according to claim 3, characterized in that There are a plurality of first via holes (33), and the plurality of first via holes (33) are arranged at intervals.

5. The switch assembly according to claim 1, wherein: One end of the switch substrate (20) is connected to the series connection substrate (10); the other end of the switch substrate (20) extends in a direction away from the series connection substrate (10).

6. The switch assembly according to claim 1, wherein: The switch assembly comprises a connection structure (40); the connection structure (40) is connected to the switch substrate (20); and the connection structure (40) is connected to the series connection substrate (10).

7. The switch assembly according to claim 6, characterized in that The connection structure (40) includes an insulating component (41), the insulating component (41) is attached to the switch substrate (20), and the insulating component (41) is connected to the series connection substrate (10).

8. The switch assembly according to claim 6, wherein: The switch component (22) further comprises a first conductive surface (51) and a second conductive surface (52) arranged opposite to each other; the connection structure (40) comprises a first connection component (53) and a second connection component (54); the first connection component (53) is connected to both the first conductive surface (51) and the series substrate (10); and the second connection component (54) is connected to both the second conductive surface (52) and the series substrate (10).

9. The switch assembly according to claim 8, characterized in that The first connecting component (53) is parallel to the switch substrate (20); the first connecting component (53) is attached to the first conductive surface (51), and one end of the first connecting component (53) is connected to the series substrate (10); the second connecting component (54) has a first connecting plate (55) attached to the second conductive surface (52) and a second connecting plate (56) attached to the series substrate (10); the first connecting plate (55) is parallel to the switch substrate (20), and the second connecting plate (56) is parallel to the series substrate (10).

10. A conductive structure, characterized in that: include: The switch assembly (100) according to any one of claims 1 to 9; A housing (60) is provided therein; the switch component (22) of the switch assembly (100) is located therein; and a filling material (62) is provided therein to encapsulate the switch component (22) and the switch substrate (20) of the switch assembly (100) within the filling material (62).

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