Intelligent power module, converter and vehicle-mounted charger

Abstract

The invention discloses an intelligent power module, a converter and a vehicle-mounted charger, the intelligent power module comprises a DBC substrate, and a heat-conducting medium layer and a plurality of groups of power assemblies which are sequentially placed on the same side of the DBC substrate, and the DBC substrate comprises a power side provided with a plurality of power pins and a signal side provided with a plurality of signal pins which are opposite to each other; and the power device is electrically connected with the control pin through a bonding wire or the power pin. Compared with the prior art, eight transistor wafers and eight diode wafers are integrated, different isolated or non-isolated converters with four bridge arm structures can be adapted through internal bonding wires or external power pins and control pins, and different user design requirements are met.

Description

TECHNICAL FIELD

[0001] The present application relates to an on-board charger for an electric vehicle, and in particular to an intelligent power module, a converter and an on-board charger. BACKGROUND

[0002] An on-board charger (OBC) for an electric vehicle, as a core component of an electric vehicle, needs to have multiple electric energy conversion functions. To achieve the electric energy conversion functions required by the OBC charger, the key power electronic devices in the OBC include power semiconductor devices.

[0003] In the prior art, power devices are mostly used in independent packaging schemes. Such discrete device schemes have the following defects in the application field of OBC chargers: 1. The production line assembly cost increases, and each device needs to be separately mounted and welded, and the cost will further increase as the number of devices increases. 2. The utilization rate of the structure space is low: discrete devices involve a three-level structure stacking mode, and considering the safety distance and crosstalk problems, the effective area of the PCB utilization is reduced and the proportion of the invalid area is increased. 3. The circuit loop is increased, which increases the parasitic parameters, especially in the high-power application scenarios such as chargers, which significantly affects the efficiency and increases the voltage stress of the device. In addition, the independent packaging scheme used in the prior art can only adapt to limited circuit topologies, and cannot meet the needs of different user circuit designs.

[0004] Therefore, how to design an intelligent power module integrating multiple groups of power devices is a technical problem that needs to be solved in the industry. SUMMARY

[0005] In view of the defects of the independent packaging scheme of the power device in the prior art, the present application proposes an intelligent power module, a converter and an on-board charger.

[0006] The technical scheme of the present application is to propose an intelligent power module, which includes a DBC substrate, and a heat-conducting medium layer and multiple groups of power components placed in sequence on the same side of the DBC substrate. The DBC substrate includes a power side opposite to a signal side, and the power side is provided with multiple power pins, and the signal side is provided with multiple signal pins.

[0007] The power device is electrically connected through the bonding wire or the power pin and the control pin.

[0008] Further, the DBC substrate includes an upper copper layer for welding the power device, an insulating layer for insulation and electrical isolation, and a lower copper layer for heat dissipation, which are placed in sequence. The power device transmits heat to the upper copper layer through the heat-conducting medium layer.

[0009] Further, the power device is welded on the DBC substrate through a reflow soldering and eutectic soldering composite process.

[0010] Furthermore, the outer shell of the DBC substrate is made of epoxy resin with a low dielectric constant.

[0011] Furthermore, each group of power devices includes transistor wafers and diode wafers arranged in an upper and lower arrangement. The transistor wafers and diode wafers are connected by bonding wires to form a single-tube unit, and adjacently arranged single-tube units are connected in series by bonding wires to form a bridge arm.

[0012] Furthermore, the number of power devices is 8 groups, and the 8 groups of power devices constitute four bridge arm structures.

[0013] Furthermore, isolation zones for electrical isolation are provided between the first bridge arm and the second bridge arm and the third bridge arm and the fourth bridge arm of the four bridge arm structure.

[0014] Furthermore, each bridge arm of the four bridge arm structures includes a high-side power tube and a low-side power tube;

[0015] The control pin connected to the high-side power tube is connected to the driving ground and the driving signal, and the driving ground corresponding to each high-side power tube is connected to the midpoint of the corresponding phase bridge arm where the high-side power tube is located;

[0016] The power pin connected to the high-side power tube is connected to the positive end of the DC bus;

[0017] The control pin connected to the low-side power tube is connected to the drive ground and the drive signal, and the drive ground corresponding to each low-side power tube is connected to the negative end of the DC bus;

[0018] The power pin connected to the low-side power tube is connected to the midpoint of the corresponding phase bridge arm where the low-side power tube is located inside the intelligent power module through a DBC substrate or a PCB, and is connected in series with the high-side power tube through a bonding wire.

[0019] Furthermore, the transistor wafer may adopt any one of IGBT, MOSFET, SiC MOSFET, and GaN; the diode wafer may adopt any one of FRD, SBD, and SiC FBD.

[0020] Furthermore, when the transistor wafer adopts an IGBT, the emitter of the transistor wafer is connected to the power pin, and the collector and gate of the transistor wafer are connected to the control pin;

[0021] When the transistor wafer is a MOSFET or SiC MOSFET, the drain of the transistor wafer is connected to the power pin, and the source and gate of the transistor wafer are connected to the control pin.

[0022] Furthermore, it also includes a plurality of driver chips integrated on the DBC substrate, and the driver chips are connected to the power devices, power pins, and control pins through a micro PCB or bonding wires.

[0023] The application further provides a converter comprising the intelligent power module.

[0024] The application further provides a vehicle-mounted charger comprising the converter.

[0025] Compared with the prior art, the application has at least the following beneficial effects:

[0026] 1. The application adopts four-bridge-arm eight-transistor wafers and eight-diode wafers for packaging, so that the design cost of the concentrated packaging heat sink is reduced, meanwhile, higher-density PCB layout is supported, SMT mounting process is compatible, and automatic production time is shortened; the integrated packaging design provided by the application is very suitable for the current OBC multi-stage complex circuit structure, for example, only two modules are needed for the current 6.6kW-OBC to complete the construction of the entire high-voltage circuit (normal 16 independent switching tubes are needed); the integrated scheme design can reduce and shorten the circuit loop path, and effectively suppress the switching tube voltage stress problem caused by parasitic parameters; 3. The application is electrically connected through internal bonding wires and external control pins and power pins, and can provide flexible circuit design and upgrade scheme; 4. The application can also integrate a driving IC, compared with external driving switching loss, the system design is more simple and convenient, the reliability is increased, and the development efficiency is improved; 5. In the application, the power pins and the control pins are arranged on one side of the DBC substrate, so that the coupling crosstalk between the power side and the control side is reduced, which is beneficial to the heat conduction of the power pins to the power devices, and the heat dissipation performance of the power devices is improved; 6. In the application, the DBC substrate adopts a three-layer structure, so that the heat conduction performance from the power device to the DBC substrate is improved. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description only some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0028] Figure 1 It is a plan view of the intelligent power module without integrated driving IC of the application;

[0029] Figure 2 It is a plan view of the intelligent power module with integrated driving IC of the application;

[0030] Figure 3 It is a simplified circuit schematic diagram of the intelligent power module without integrated driving IC of the application;

[0031] Figure 4 Simplified circuit diagram of the application for the connection mode of internal bonding wires of two bridge arms;

[0032] Figure 5 Simplified circuit diagram of the application for the connection mode of internal bonding wires of four bridge arms;

[0033] Figure 6 Simplified circuit diagram of the application for the connection mode of internal bonding wires of four bridge arms;

[0034] Figure 7 Voltage stress waveform diagram of each switch tube before the application of the application;

[0035] Figure 8 Voltage stress waveform diagram of each switch tube after the application of the application;

[0036] Figure 9 Simplified circuit diagram of 6.6kW-OBC high-voltage battery charging;

[0037] Figure 10 Simplified equivalent circuit diagram of DC bus voltage to high-voltage battery charging;

[0038] Figure 11 Simplified circuit diagram of the application of the intelligent power module of the application without integrated drive IC to 6.6kW-OBC circuit (PFC+DAB primary side);

[0039] Figure 12 Simplified circuit diagram of the application of the intelligent power module of the application with integrated drive IC to 6.6kW-OBC circuit (PFC+DAB primary side);

[0040] Figure 13 Simplified circuit diagram of the application of the intelligent power module of the application without integrated drive IC to 6.6kW-OBC-DAB circuit;

[0041] Figure 14 Simplified circuit diagram of the application of the intelligent power module of the application with integrated drive IC to 6.6kW-OBC-DAB circuit;

[0042] Figure 15 Simplified circuit diagram of high-voltage battery charging low-voltage battery;

[0043] Figure 16 Simplified circuit diagram of the application of the intelligent power module of the application without integrated drive IC to high-voltage battery charging low-voltage battery circuit;

[0044] Figure 17The implementation schematic diagram of the intelligent power module of the application applied to the high-voltage battery charging low-voltage battery circuit when the driving IC is integrated;

[0045] Figure 18 The simplified circuit schematic diagram of the three-phase OBC front stage (three-phase four-bridge arm);

[0046] Figure 19 The implementation schematic diagram of the intelligent power module of the application in the three-phase OBC front stage PFC circuit when the driving IC is not integrated;

[0047] Figure 20 The implementation schematic diagram of the intelligent power module of the application in the three-phase OBC front stage PFC circuit when the driving IC is integrated;

[0048] Figure 21 The simplified circuit schematic diagram of the series-parallel combined output module;

[0049] Figure 22 The implementation schematic diagram of the intelligent power module of the application applied to the series-parallel combined output module when the driving IC is not integrated;

[0050] Figure 23 The implementation schematic diagram of the intelligent power module of the application applied to the series-parallel combined output module when the driving IC is integrated;

[0051] Figure 24 The simplified circuit schematic diagram of the series-parallel combined input module;

[0052] Figure 25 The implementation schematic diagram of the intelligent power module of the application applied to the series-parallel combined input module when the driving IC is not integrated;

[0053] Figure 26 The implementation schematic diagram of the intelligent power module of the application applied to the series-parallel combined input module when the driving IC is integrated;

[0054] Figure 27 The simplified circuit schematic diagram of the single-phase single-stage OBC;

[0055] Figure 28 The implementation schematic diagram of the intelligent power module of the application applied to the single-phase single-stage OBC when the driving IC is not integrated;

[0056] Figure 29 The implementation schematic diagram of the intelligent power module of the application applied to the single-phase single-stage OBC when the driving IC is integrated;

[0057] Figure 30 The simplified circuit schematic diagram of a four-bridge arm structure;

[0058] Figure 31The embodiment schematic diagram of the intelligent power module of the application applied to four bridge arm structures when the driving IC is not integrated;

[0059] Figure 32 The embodiment schematic diagram of the intelligent power module of the application applied to four bridge arm structures when the driving IC is integrated. DETAILED DESCRIPTION

[0060] In order to make the technical problems, technical solutions and beneficial effects of the application clearer, the application is further described in detail below in combination with the drawings and embodiments.

[0061] The principles and structures of the application are described in detail below in combination with the drawings and embodiments.

[0062] The application provides an intelligent power module, which is integrated with eight transistor wafers and eight diode wafers and is connected through internal bonding wires and external power pins and control pins, is suitable for different isolation / non-isolation converters with four bridge arm structure characteristics, and can be further integrated with a driving IC to meet different circuit needs.

[0063] Specifically, the intelligent power module provided by the application comprises a DBC substrate and a plurality of power assemblies placed on the same side of the DBC substrate in sequence, and the DBC substrate comprises a power side opposite to a signal side, wherein the power side is provided with a plurality of power pins, and the signal side is provided with a plurality of signal pins.

[0064] The power devices are electrically connected through the bonding wires or the power pins and the control pins.

[0065] As can be seen from the above arrangement, the application is integrated with a plurality of power devices, that is, a plurality of power devices are centrally packaged, and compared with the independent packaging scheme, the volume of the heat sink can be saved by more than 30% during specific implementation; in addition, the scheme of integrating a plurality of power devices can support a higher density of PCB layout, optimize the three-dimensional space structure of the charger, and is compatible with the SMT mounting process, shortens the automatic production line time, and only two integrated modules are needed to complete most of the multi-stage high-voltage conversion circuit requirements of the charger.

[0066] The application can cross different bridge arms inside the package through the bonding wires to form an isolation and non-isolation solution, and can form an electrical connection with the external PCB through the external power pins and control pins, and flexibly design the circuit according to needs.

[0067] In the application, each group of power devices includes transistor wafers and diode wafers arranged in an up-down manner, and the transistor wafers and the diode wafers are connected by bonding wires to form a single tube unit, and adjacent single tube units are connected in series by bonding wires to form a bridge arm.

[0068] In the application, the number of power devices is 8 groups, and the 8 groups of power devices form four bridge arm structures, and the four bridge arms of the four bridge arm structures are arranged in sequence laterally on the DBC substrate. An isolation belt for electrical isolation is arranged between the first bridge arm and the second bridge arm and between the third bridge arm and the fourth bridge arm of the four bridge arm structures.

[0069] According to the above arrangement, please refer to Figure 1 The intelligent power module proposed in the application is composed of four bridge arm structures, adopts a multi-chip module (MCM) packaging technology, and includes 8 transistor wafers and 8 diode wafers for integrated packaging, wherein the power transistor wafers and the diode wafers are connected in parallel.

[0070] Specifically, the intelligent power module includes a copper-clad ceramic DBC substrate, 8 groups of power devices (each group of power devices includes a transistor wafer and a diode wafer), and a heat-conducting medium layer.

[0071] All the power devices are arranged on the same side of the DBC substrate together with the heat-conducting medium layer, and the DBC substrate and the heat-conducting medium layer are arranged in a stack. The heat-conducting medium layer is in contact with the power devices and the DBC substrate, respectively, so that the heat generated by the 8 groups of power devices can be transferred to the DBC substrate through the heat-conducting medium layer and dissipated through the DBC substrate. The heat-conducting medium layer can reduce the thermal resistance between the power devices and the DBC substrate, which is conducive to improving the heat dissipation efficiency.

[0072] In the stacking arrangement direction, the area of the heat-conducting medium layer is greater than the area of the power devices, so that the power devices and the heat-conducting medium layer are in full contact, and the DBC substrate also has a large contact area, thereby improving the heat transfer efficiency from the power devices to the DBC substrate.

[0073] As can be seen from Figure 1 Each transistor wafer (T) corresponds to a diode wafer (D) arranged in an up-down manner, and is connected by bonding wires to form a single tube unit.

[0074] The high-side power transistor (the single tube unit located in the upper part of the same bridge arm, for example, the high-side power transistor of the first bridge arm is the single tube unit composed of the transistor wafer T1 and the diode wafer D1) and the low-side power transistor (the single tube unit located in the lower part of the same bridge arm, for example, the low-side power transistor of the first bridge arm is the single tube unit composed of the transistor wafer T3 and the diode wafer D3) are arranged adjacent to each other, as shown in Figure 1As shown, bonding wires are connected in series to form a bridge arm. In the present invention, 8 groups of power devices are composed of 4 bridge arms (respectively, the first bridge arm, the second bridge arm, the third bridge arm, and the fourth bridge arm), which are distributed laterally symmetrically along the DBC substrate; an isolation belt is provided between the first bridge arm, the second bridge arm and the third bridge arm, and the fourth bridge arm for electrical isolation.

[0075] The four bridge arms can be electrically connected to the PCB through external power pins and control pins, or they can be electrically connected inside the package through internal bonding wires, meeting the flexible design requirements of the circuit.

[0076] like Figure 4 In the present invention, the first bridge arm and the second bridge arm are connected via bonding wires to form a pair of bridge arms, and the third bridge arm and the fourth bridge arm are connected via bonding wires to form a pair of bridge arms, thereby forming two sets of isolated full-bridge arm structures.

[0077] Figure 5 This is an embodiment of the present invention in which the first to fourth bridge arms are all bridged together by bonding wires to form a non-isolated four-bridge arm structure.

[0078] See Figure 1 , on the first side of both sides of the plastic package ( Figure 1 The upper part of the) is the control side, the second side ( Figure 1 The lower part of the power side is provided with a plurality of external pins, the control side is a control pin, and the power side is a power pin. The different phase bridge arms of the present invention can also be connected to the PCB or other components through the power pins and control pins for electrical connection;

[0079] The present invention provides an electrical connection method:

[0080] Each bridge arm of the four bridge arm structures includes a high-side power tube and a low-side power tube;

[0081] Connect the control pins corresponding to the high-side power tubes to the drive ground and the drive signal, where the drive ground is connected to the midpoint of the corresponding phase bridge arm through the control pins and bonding wires, and the power pins corresponding to the high-side power tubes are used to connect to the positive terminal of the common DC bus;

[0082] The control pins corresponding to the low-side power tubes are connected to the driving ground and the driving signal, wherein the driving ground is connected to the negative end of the common DC bus through the control pins, and the power pins corresponding to the low-side power tubes are connected to the corresponding midpoints of the bridge arms and are connected in series with the high-side power tubes through bonding wires.

[0083] Optionally, in other embodiments of the application, the power pins of the high-side power tubes of the four bridge arm structures can be connected to the positive end of the common DC bus, and the control pins of the low-side power tubes of the four bridge arms can be connected to the negative end of the common DC bus, which can be electrically connected internally by bonding wires or externally by PCB wires or components.

[0084] In the application, each group of power devices includes a transistor wafer and a diode wafer, wherein the transistor wafer can be any one of an insulated bipolar transistor (IGBT), a metal-oxide semiconductor field effect transistor (MOSFET), a silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET), or a gallium nitride device (GaN).

[0085] The diode wafer can be any one of a fast recovery diode (FRD) or a Schottky diode (SBD) matched with the transistor, or a silicon carbide diode (SiC SBD).

[0086] When the transistor wafer is an IGBT, the emitter of the transistor wafer is connected to the power pin, and the collector and the gate of the transistor wafer are connected to the control pin.

[0087] When the transistor wafer is a MOSFET or a SiC MOSFET, the drain of the transistor wafer is connected to the power pin, and the source and the gate of the transistor wafer are connected to the control pin.

[0088] Please refer to Figure 2 The application can also integrate a driving chip, i.e., a driving IC, on the basis of the above, which can be connected to the power devices, the power pins, and the control pins through a micro-PCB or bonding wires. In this way, the driving IC is packaged on the DBC substrate together with the power devices, thereby shortening the gate wire length, reducing the interference of the driving signals, and further improving the power density.

[0089] The difference after the integration of the driving IC is that the control pin changes, please refer to Figure 6 Each driving IC drives one bridge arm and corresponds to two single-tube units. A single driving IC is connected to the external pins on the control side through bonding wires or a micro-PCB.

[0090] Each driving chip includes pins VHI, VLI, and VDD for driving power supply, a pin VSS for driving ground, pins VS(11) and VS(12) for isolating the driving ground, a pin ITRIP for overcurrent protection, a pin VFO for temperature sampling, and pins HIN and LIN for PWM signal ports. It should be noted that Figure 6Some basic function pins of the driving IC are described, and more extension pins are needed for more functions.

[0091] In the application, the DBC substrate comprises an upper copper layer for welding power devices, an insulation layer for insulation and electricity isolation, and a lower copper layer for heat dissipation, and the power devices transmit heat to the upper copper layer through the heat-conducting medium layer.

[0092] The power devices are welded on the DBC substrate through a reflow soldering and eutectic soldering composite process, the sintering process of the transistor wafer and the diode wafer is carried out in a nitrogen environment, and the shell of the DBC substrate is made of epoxy resin with low dielectric constant.

[0093] Specifically, the DBC substrate is composed of three layers, i.e., an upper copper layer (for welding power devices), an insulation layer (aluminum oxide Al2O3 or aluminum nitride AlN), and a lower copper layer (heat dissipation coating), wherein the upper copper layer is etched to form a high-voltage isolation belt, and the lower copper layer is an integral heat dissipation surface, which is a substrate with good heat conduction performance. All heat sources, i.e., the transistor wafer and the diode wafer, are mounted on the DBC substrate to fully utilize the heat dissipation capacity of the package. This centralized packaging scheme can effectively reduce the size of the PCB and the ASCI, simplify the assembly process, and improve the efficiency of the production line.

[0094] The heat-conducting medium layer is in close contact with the upper copper layer of the DBC, so that the heat generated by the power devices is transmitted to the upper copper layer of the DBC through the heat-conducting medium, and then transmitted to the lower copper layer through the insulation layer in the DBC, thereby achieving the heat dissipation target of the DBC substrate for the power devices.

[0095] In other embodiments of the application, the heat-conducting medium layer is welded or bonded with the upper copper layer of the DBC substrate, so that the heat-conducting medium layer and the upper copper layer of the DBC substrate are integrally formed.

[0096] The material of the heat-conducting medium layer is not limited, and it can be a copper layer.

[0097] To ensure the heat conduction efficiency between the power devices and the DBC substrate, the heat-conducting medium layer should fully cover the projection of the power devices along the stacking direction to increase the effective contact area between the power devices and the heat-conducting medium layer. At the same time, the heat-conducting medium layer should have a large enough contact area with the upper copper layer of the DBC substrate to effectively reduce the thermal resistance between the power devices and the upper copper layer of the DBC substrate, thereby improving the heat dissipation performance of the power devices. It should be noted that the size of the heat-conducting medium layer is not specifically limited and is determined by the internal space. The larger the projection area of the heat-conducting medium layer along the stacking direction, the better the heat dissipation effect.

[0098] Please refer to Figure 1In the present application, there are totally 8 groups of power devices, which are composed of 8 transistor wafers (T1-T8) and 8 diode wafers (D1-D8), wherein QxH is defined as a high-side tube, and QxL is defined as a low-side tube;

[0099] Power pin: located on one side of the intelligent power module, all high-side tubes and low-side tubes are connected at the drain in the intelligent power module, the drain of the high-side tube is usually connected with the positive end of the DC bus, and the drain of the low-side tube is the bridge arm midpoint.

[0100] Control pin: located on the other side of the intelligent power module, including gate drive signals (PWM1-PWM8) and drive ground GND, wherein the drive ground of the high-side tube is electrically connected with the bridge arm midpoint, and the drive ground of the low-side tube is connected with the negative end of the DC bus.

[0101] Taking MOSFET as an example, please refer to Figure 3 , the drain of the high-side tube Q1H is connected with the power pin through copper wiring, the source of the high-side tube Q1H is connected with the drain of the low-side tube Q1L, and is connected with the power pin and the control pin respectively, the gate of the high-side tube Q1H is connected with the control pin, and the gate and the source of the low-side tube Q1L are connected with the control pin, and the high-side tube Q1H and the low-side tube Q1L constitute a group of half-bridge bridge arms, the whole power module contains four groups of half-bridge bridge arms, and the four groups of bridge arms are connected with the PCB through external pins, and the electrical connection mode of the four groups of half-bridge bridge arms can be designed freely outside.

[0102] In the package, in addition to the independent four groups of half-bridge bridge arms, the electrical connection between different bridge arms can also be completed in the package through bonding wires. Figure 4 A possible implementation is shown, the drains of the high-side tubes of the first bridge arm and the second bridge arm and the sources of the low-side tubes of the first bridge arm and the second bridge arm are connected respectively to constitute a group of full-bridge, and similarly, the drains of the high-side tubes of the third bridge arm and the fourth bridge arm and the sources of the low-side tubes of the third bridge arm and the fourth bridge arm are connected respectively to constitute a group of full-bridge. Figure 5 Another possible internal bonding mode is shown, the drains of the high-side tubes of the four groups of bridge arms and the sources of the low-side tubes are connected respectively to constitute a group of four-bridge bridge arm structure.

[0103] The power pins and control pins are placed on both sides of the intelligent power module, and the pin spacing adopts a differentiated design. Reasons: 1. During operation, a large current flows into the power device through the power port and is connected to the other power port (placed on the control side as the control ground). The large current is the main reason for the heat generated by the power device. The placement of the pins on both sides is conducive to the dissipation of the heat generated by the power device; 2. The intelligent power module is divided into control pins and power pins, which is conducive to ensuring the integrity of the drive signal and reducing aberration and distortion; 3. The control pins include the drive signal pin and the drive ground pin. The two are set close to ensure the integrity of the drive signal, and the spacing between different power pins should be large enough to meet the requirements of creepage spacing and insulation distance.

[0104] Based on the above configuration, the present invention further proposes a converter having the above intelligent power module;

[0105] Furthermore, the present invention also provides an on-vehicle charger having the above-mentioned converter.

[0106] In summary, the present invention has at least the following features and beneficial effects:

[0107] 1. The present invention integrates four bridge arms, eight transistor wafers (T1-T8), and diode wafers (D1-D8) for packaging. The power terminals of each component face one side of the intelligent power module and are connected to the power pins via copper traces. Compared with independent packaging solutions, this design saves more than 30% of the heat sink volume, supports a higher-density PCB layout, and optimizes the three-dimensional structure of the charger. In addition, the above design is compatible with SMT mounting processes, shortening automated production time. Only two integrated modules are required to meet most of the multi-stage high-voltage conversion circuit requirements of the charger.

[0108] 2. The present invention is provided with an internal bonding wire and an external power pin and control pin connection scheme, which can bridge different bridge arms inside the package through bonding wires to form an isolated or non-isolated solution. The control pin and power pin are electrically connected to the external PCB, and the circuit can be flexibly designed as needed, providing a flexible circuit design and upgrade solution.

[0109] 3. The present invention also provides a solution for integrating a driver IC, which is directly integrated on the DBC substrate and connected to the power tube, control pin, and power pin through bonding wires. A temperature sensor is built in, which can report the internal temperature of the package through the signal interface. The above arrangement has a shorter gate loop, which is conducive to reducing path parasitic parameters. Compared with external driver switching losses, the switching loss is reduced (about 22%). Figure 7 and Figure 8The intelligent power module of the application can effectively reduce the parasitic parameters and further reduce the voltage peak of the switching tube without considering additional absorption circuits.

[0110] The above setting has an integrated scheme with deep integration, so that the system design is more simple and the reliability is increased, the external driving switch is omitted, the effective utilization area of the PCB is improved, and the development efficiency is improved.

[0111] 4, the power pin and the control pin are respectively arranged on different sides of the intelligent power module, and the pin spacing is designed differently; this setting can reduce the coupling crosstalk between the power pin and the control pin, and at the same time, the heat generated by each power side pin to the power device is led out, improving the heat dissipation performance of the power device;

[0112] 5, the DBC substrate is composed of three layers; this design improves the heat dissipation performance of the power device to the DBC substrate, and the upper copper layer also bears most of the power device connection needs.

[0113] Among them, the intelligent power module of the application also has a deformation scheme:

[0114] The core of the application is to adopt 8 transistor wafer integration, which is placed on the DBC substrate combined with the bonding wire to provide heat dissipation and electrical connection, mainly for 6.6kW-OBC, 11 / 22kW-OBC. Deformation 1: The wafer arrangement mode may be different, for example, two in a group from top to bottom, arranged in 4 columns horizontally; Deformation 2: The bonding wire connection mode may be different, as mentioned in the foregoing, through the bonding wire, the four bridge arms can be realized independently in the module; two bridge arms are electrically connected, and an isolation belt is arranged in the middle of the two groups of full-bridge bridge arms, and the four-phase bridge arms are directly electrically connected inside the module. Deformation 3: Similarly, 8 wafer integrations are packaged, but the high-side and low-side power tubes do not adopt the series connection mode of the first part being connected, but adopt the mode of the first part being connected or the tail part being connected through the change of the bonding wire connection mode, which is used for multi-level topology.

[0115] Further, the intelligent power module proposed by the application can also form different topological structures by adjusting the connection mode of each external pin on the intelligent power module, that is, adapt to different circuit needs.

[0116] Specifically, the above-mentioned intelligent power module is integrated with four bridge arm structures, and the intelligent power module of the application is correspondingly provided with the pin HO1, the pin LO1 and the pin SS1 corresponding to the first group of bridge arms in the four bridge arm structures, the pin HO2, the pin LO2 and the pin SS2 corresponding to the second group of bridge arms in the four bridge arm structures, the pin HO3, the pin LO3 and the pin SS3 corresponding to the third group of bridge arms in the four bridge arm structures, and the pin HO4, the pin LO4 and the pin SS4 corresponding to the fourth group of bridge arms in the four bridge arm structures.

[0117] Pin HO1 is connected to the upper end of the bridge arm of the first group of bridge arms, pin LO1 is connected to the middle point of the bridge arm of the first group of bridge arms, and pin SS1 is connected to the lower end of the bridge arm of the first group of bridge arms;

[0118] Pin HO2 is connected to the upper end of the bridge arm of the second group of bridge arms, pin LO2 is connected to the middle point of the bridge arm of the second group of bridge arms, and pin SS2 is connected to the lower end of the bridge arm of the second group of bridge arms;

[0119] Pin HO3 is connected to the upper end of the bridge arm of the third group of bridge arms, pin LO3 is connected to the middle point of the bridge arm of the third group of bridge arms, and pin SS3 is connected to the lower end of the bridge arm of the third group of bridge arms;

[0120] Pin HO4 is connected to the upper end of the bridge arm of the fourth group of bridge arms, pin LO4 is connected to the middle point of the bridge arm of the fourth group of bridge arms, and pin SS4 is connected to the lower end of the bridge arm of the fourth group of bridge arms.

[0121] The above-mentioned pins HO1, HO2, HO3, HO4, LO1, LO2, LO3, LO4, SS1, SS2, SS3, and SS4, that is, the above-mentioned external pins, can be adjusted by the connection mode of the above-mentioned pins, so that different circuit structures can be adapted.

[0122] The connection mode of the application for adapting to different circuit structures will be described below:

[0123] The application can be adapted to a 6.6kW-OBC high-voltage battery charging circuit. The key AC-DC conversion circuit of the 6.6kW-OBC high-voltage battery charging circuit includes a front-stage totem pole PFC and a rear-stage DAB circuit, including six bridge arms corresponding to twelve power tubes. The intelligent power module of the application can be used in the PFC and DAB primary circuit (four non-isolated bridge arms) as shown in Figure 9 , and can also be used in the DAB primary and secondary circuit implementation (four isolated bridge arms) as shown in Figure 10 ;

[0124] Please refer to Figure 9 , the input side includes an alternating current input, which is connected to the first bridge arm and the second bridge arm of the intelligent power module through the input terminal and the EMC filter, and the PFC inductor, and the PFC output is provided with a 1200μF capacitor to provide a stable DC bus voltage.

[0125] Please refer to Figure 11 , which is applied to Figure 9The connection mode of the circuit is that, under the connection mode, the pin HO1, the pin HO2, the pin HO3 and the pin HO4 are connected to the positive end of the DC bus, the pin SS1, the pin SS2, the pin SS3 and the pin SS4 are connected to the negative end of the DC bus, the pin LO1 is connected to the positive end of the AC input, the pin LO2 is connected to the negative end of the AC input, the pin LO3 is connected to the same end of the primary winding of the transformer, and the pin LO4 is connected to the different end of the primary winding of the transformer.

[0126] Please refer to Figure 12 , which is applied to Figure 9 the connection mode of the circuit, the specific connection mode is consistent with Figure 11 , except that the smart power module is integrated with a driving IC, which is not described here;

[0127] Please refer to Figure 13 , which is applied to Figure 10 the connection mode of the circuit, under the connection mode, the pin HO1 and the pin HO2 are connected to the positive end of the DC bus, the pin SS1 and the pin SS2 are connected to the negative end of the DC bus, the pin HO3 and the pin HO4 are connected to the positive end of the high-voltage battery, the pin SS3 and the pin SS4 are connected to the negative end of the high-voltage battery, the pin LO1 is connected to the same end of the primary winding of the transformer after being connected to the impedance element, the pin LO2 is connected to the different end of the primary winding of the transformer, the pin LO3 is connected to the same end of the secondary winding of the transformer, and the pin LO4 is connected to the different end of the secondary winding of the transformer.

[0128] There is an electrical connection between the four bridge arms of the smart power module used, that is, all high-side power tubes are connected to the positive end of the DC bus, and all low-side power tubes are connected to the negative end of the DC bus, so the four bridge arms can be connected inside the package by bonding wires or can be electrically connected by external PCB wiring.

[0129] The above connection mode does not integrate a driving IC, and an external isolation driving IC is provided on the control side, and the driving IC controls the power device to act according to the PWM signal issued by the control IC; optionally, the circuit structure can also be further integrated with a driving IC package. Please refer to Figure 14 , which is different from Figure 13 in that the control pins of the package module are different: the control signals, chip power supply, temperature sampling and other non-isolation signals issued by the control IC according to the working state of the charger are connected to the driving IC through the external pins of the package, and a single driving IC issues two-way isolation driving output to control the PFC two-phase bridge arm and the DAB primary side bridge arm to act.

[0130] Figure 13 Different from Figure 11The circuit implementation operation of the application is that, since there is no electrical connection between the first bridge arm, the second bridge arm and the third bridge arm and the fourth bridge arm, the first bridge arm and the second bridge arm should not be bonded in the integrated package, and meanwhile, the isolation band (distance ≥ 8 mm) should meet the creepage distance and the space gap (≥ 5 mm) to meet the insulation requirement and the voltage breakdown between the primary side bridge arm and the secondary side bridge arm.

[0131] Optionally, since there is electrical isolation between the first bridge arm, the second bridge arm and the third bridge arm and the fourth bridge arm, the first bridge arm and the second bridge arm can be electrically connected through the bonding wire in the integrated package, the third bridge arm and the fourth bridge arm can be electrically connected through the bonding wire, and the flexible circuit design can also be directly realized through the external PCB.

[0132] Further, the application can also be applied to the high-voltage battery charging low-voltage battery circuit as shown in Figure 15 Figure 16 The application intelligent power module topology includes: a high-voltage side charging circuit and a low-voltage side charging circuit, and the high-voltage side charging circuit and the low-voltage side charging circuit share the high-voltage battery charging.

[0133] The pin HO1 and the pin HO2 are connected to the positive end of the high-voltage battery, the pin SS1 and the pin SS2 are connected to the negative end of the high-voltage battery, the pin LO1 is connected to the same end of the secondary winding of the high-voltage side transformer, and the pin LO2 is connected to the opposite end of the secondary winding of the high-voltage side transformer.

[0134] The pin HO3 and the pin HO4 are connected to the positive end of the high-voltage battery, the pin SS3 and the pin SS4 are connected to the negative end of the high-voltage battery, the pin LO3 is connected to the same end of the primary winding of the low-voltage side transformer, and the pin LO4 is connected to the opposite end of the primary winding of the low-voltage side transformer.

[0135] Please refer to Figure 15 The low-voltage side charging circuit and the high-voltage side charging circuit share the positive end HV+ and the negative end HV- of the high-voltage battery, and are directly electrically connected, so that the four bridge arms can be directly connected in the integrated package or electrically connected through the PCB and the external elements. Optionally, the pin HO3 is connected to the positive end HV+ of the high-voltage battery, the pin LO3 is connected to the same end of the primary winding of the low-voltage side transformer, and the pin SS3 is connected to the negative end HV- of the high-voltage battery.

[0136] Optionally, the pin HO4 is connected to the positive end HV+ of the high-voltage battery, the pin LO4 is connected to the opposite end of the primary winding of the low-voltage side transformer, and the pin SS4 is connected to the negative end HV- of the high-voltage battery.

[0137] Please refer to Figure 17 , which is an intelligent power module integrated with a driving IC and applied to Figure 15 ​The connection mode of the circuit is consistent with the specific connection mode shown in the above embodiment, except that the intelligent power module is integrated with a driving IC, which is not described herein. Figure 16

[0138] Further, the application can also be adapted to an 11kW / 22kW-OBC supporting three-phase AC input, which has the following functions: three-phase PFC mode: three-phase AC is converted into DC to charge the high-voltage battery; single-phase PFC mode: single-phase AC is converted into DC to charge the high-voltage battery; single-phase inversion (V2L) mode: in-vehicle inversion, similar to single-phase PFC, but the power flow is reversed; three-wire inversion mode (V2H) mode; DC-DC mode: the high-voltage battery charges the low-voltage battery.

[0139] To realize the functions of the three-phase OBC, unlike the single-phase OBC, the front-stage PFC needs to adopt a four-bridge-arm structure as shown in Figure 18 The circuit structure includes four bridge arms, which can be realized by the intelligent power module of the application, and by configuring different relay working states and controlling different PWM driving waveforms, the conversion of various working modes can be realized.

[0140] Please refer to Figure 19 Under the application circuit, the pin HO1, the pin HO2, the pin HO3, and the pin HO4 are connected to the positive end of the DC bus, the pin SS1, the pin SS2, the pin SS3, and the pin SS4 are connected to the negative end of the DC bus, the pin LO1 is connected to the A-phase AC input, the pin LO2 is connected to the B-phase AC input, the pin LO3 is connected to the C-phase AC input, and the pin LO4 is connected to the N-wire interface terminal.

[0141] The application circuit further includes a relay connected at one end to the midpoint of the bus capacitor and connected at the other end to the pin LO4 and the N-wire interface terminal.

[0142] When the relay is open, the topology structure of the intelligent power module operates in the single-phase mode, and when the relay is closed, the topology structure of the intelligent power module operates in the three-phase mode.

[0143] In the single-phase mode, the relay connected at the midpoint of the bus capacitor is open, and optionally, the fourth bridge arm is used as a slow tube to form a totem pole PFC circuit structure; optionally, no slow tube is set, and the operation is performed according to the working principle of the single-phase Boost PFC, and the different circuit working modes are determined by the way in which the driving IC drives the power tube.

[0144] In the three-phase inversion (V2H) mode, the relay connected at the midpoint of the bus capacitor is closed, and the fourth bridge arm participates in high-frequency operation to control the zero-sequence and negative-sequence currents caused by unbalanced loads.

[0145] Please refer to Figure 20 ​, which is the application of intelligent power module with integrated driver IC Figure 18 The connection method of the circuit is as follows: Figure 19 The only difference is that the intelligent power module has an integrated driver IC, which will not be described here.

[0146] Furthermore, the present invention can also be applied to a series-parallel combined output module, and the functions of the converter include: low-voltage parallel mode: reducing the current stress of the switching device on the HV DC output side; high-voltage series mode: reducing the voltage stress of the switching device on the HV DC output side;

[0147] In order to realize the many functions of the series-parallel combination output module, four bridge arm structures are used. Figure 21 As shown, the circuit structure includes four groups of bridge arms, which can be implemented by the intelligent power module designed by the present invention, and the conversion of multiple working modes can be achieved by configuring different relay working states;

[0148] See Figure 22 In this application circuit, the topological structure of the intelligent power module proposed by the present invention further includes a first connection terminal and a second connection terminal. The topological structure of the intelligent power module has a low-voltage parallel mode and a high-voltage series mode. In the low-voltage parallel mode, the first connection terminal is connected to the negative DC output terminal, and the second connection terminal is connected to the positive DC output terminal. In the high-voltage series mode, the first connection terminal and the second connection terminal are connected.

[0149] Pins HO1 and HO2 are connected to the DC output positive terminal, pins SS1 and SS2 are connected to the first connection terminal, pins HO3 and HO4 are connected to the second connection terminal, pins SS3 and SS4 are connected to the DC output negative terminal, pin LO1 is connected to the same-name terminal of the secondary winding of the high-side transformer, pin LO2 is connected to the opposite-name terminal of the secondary winding of the high-side transformer, pin LO3 is connected to the same-name terminal of the secondary winding of the low-side transformer, and pin LO4 is connected to the opposite-name terminal of the secondary winding of the low-side transformer.

[0150] Here the first connection terminal corresponds to the Figure 21 , Attachment Figure 22 , and attached Figure 23 The upper terminal connected to state 1 and state 2, the second connection terminal corresponds to the attached Figure 21 , Attachment Figure 22 , and attached Figure 23 The lower terminal connected to state 1 and state 2, when the above circuit needs to operate in low-voltage parallel mode, the first connection terminal and the second connection terminal are connected to state 1 accordingly. At this time, pin HO1 is connected to the DC output positive terminal HV+, pin LO1 is connected to the same-name terminal of the secondary winding of the high-side transformer, and pin SS1 is connected to the DC output negative terminal HV-;

[0151] Pin HO2 is connected to the positive terminal HV+ of the DC output, pin LO2 is connected to the opposite terminal of the secondary winding of the high-side transformer, and pin SS2 is connected to the negative terminal HV- of the DC output;

[0152] Pin HO3 is connected to the positive terminal HV+ of the DC output, pin LO3 is connected to the same terminal of the secondary winding of the low-side transformer, and pin SS3 is connected to the negative terminal HV- of the DC output;

[0153] Pin HO4 is connected to the positive terminal HV+ of the DC output, pin LO4 is connected to the opposite terminal of the secondary winding of the low-side transformer, and pin SS4 is connected to the negative terminal HV- of the DC output.

[0154] When it is required to make the above-mentioned circuit operate in the high-voltage series mode, the first connection terminal and the second connection terminal are correspondingly connected to state 2, at this time pin HO1 is connected to the positive terminal HV+ of the DC output, and pin LO1 is connected to the same terminal of the secondary winding of the high-side transformer;

[0155] Pin HO2 is connected to the positive terminal HV+ of the DC output, and pin LO2 is connected to the opposite terminal of the secondary winding of the high-side transformer;

[0156] Pin LO3 is connected to the same terminal of the secondary winding of the low-side transformer, and pin SS3 is connected to the negative terminal HV- of the DC output;

[0157] Pin LO4 is connected to the opposite terminal of the secondary winding of the low-side transformer, and pin SS4 is connected to the negative terminal HV- of the DC output;

[0158] Pin SS1 and pin SS2 are connected to pin HO3 and pin HO4.

[0159] Please refer to Figure 23 , which is the connection mode of the intelligent power module integrated with the driving IC applied to the circuit Figure 21 , the specific connection mode of which is consistent with Figure 22 , except that the intelligent power module is integrated with the driving IC, which is not described here.

[0160] Further, the present application can also be adapted to a series-parallel combined input module, the transformer has the functions of: low-voltage parallel mode: reducing the current stress of the switch device on the HV DC input side; high-voltage series mode: reducing the voltage stress of the switch device on the HV DC input side;

[0161] In order to realize the functions of the series-parallel combined input module, a four-bridge-arm structure is adopted as shown in Figure 24 , which includes four groups of bridge arms, realized by the integrated module designed by the present application, and the conversion of multiple working modes is realized by configuring different relay working states.

[0162] See Figure 25 In this application circuit, pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus, pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus, pin LO1 is connected to the same-name terminal of the primary winding of the high-side transformer, pin LO2 is connected to the opposite-name terminal of the primary winding of the high-side transformer, pin LO3 is connected to the same-name terminal of the primary winding of the low-side transformer, and pin LO4 is connected to the opposite-name terminal of the primary winding of the low-side transformer.

[0163] See Figure 26 , which is the application of intelligent power module with integrated driver IC Figure 24 The connection method of the circuit is as follows: Figure 25 The only difference is that the intelligent power module has an integrated driver IC, which will not be described here.

[0164] Furthermore, the present invention can also be adapted to single-phase single-stage OBC, see Figure 27 , which includes a total of 4 groups of back-to-back bridge arms, with different bridge arms sharing the high-voltage DC bus. Figure 28 In this application circuit, the topological structure of applying the intelligent power module proposed by the present invention further includes four groups of inductors, including a first group of inductors connected in series between the positive terminal of the AC input and the same-name end of the primary winding of the high-side transformer, a second group of inductors connected in series between the positive terminal of the AC input and the opposite-name end of the primary winding of the high-side transformer, a third group of inductors connected in series between the negative terminal of the AC input and the same-name end of the primary winding of the low-side transformer, and a fourth group of inductors connected in series between the negative terminal of the AC input and the opposite-name end of the primary winding of the low-side transformer.

[0165] Pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus, pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus, pin LO1 is connected between the first group of inductors, pin LO2 is connected between the second group of inductors, pin LO3 is connected between the third group of inductors, and pin LO4 is connected between the fourth group of inductors.

[0166] See Figure 29 , which is the application of intelligent power module with integrated driver IC Figure 27 The connection method of the circuit is as follows: Figure 28 The only difference is that the intelligent power module has an integrated driver IC, which will not be described here.

[0167] In addition, other topologies such as Figure 30 As shown, it can be adapted and applied through the intelligent power module of the present invention, see Figure 31In this application circuit, pins HO1 and HO2 are connected to the DC input positive terminal, pins SS1 and SS2 are connected to the DC input negative terminal, pin LO1 is connected to the same-name terminal of the primary winding of the transformer, pin LO2 is connected to the opposite-name terminal of the primary winding of the transformer, pin HO3 is connected to the DC output positive terminal, pin LO3 is connected to the same-name terminal of the secondary winding of the transformer after connecting an impedance element in series, pins SS3 and HO4 are connected to the midpoint of the bus capacitor connected in series between the DC output positive terminal and the DC output negative terminal, pin LO4 is connected to the opposite-name terminal of the secondary winding of the transformer, and pin SS4 is connected to the DC output negative terminal.

[0168] See Figure 32 , which is the application of intelligent power module with integrated driver IC Figure 30 The connection method of the circuit is as follows: Figure 31 The only difference is that the intelligent power module has an integrated driver IC, which will not be described here.

[0169] From the above configuration, it can be seen that the topological structure of the intelligent power module proposed in the present invention can adapt to different circuit structures and meet different user circuit design needs by adjusting the connection mode of the external pins because it has multiple external pins.

[0170] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An intelligent power module, characterized in that: The DBC substrate comprises a DBC substrate, a heat-conducting medium layer and a plurality of power components sequentially placed on the same side of the DBC substrate, wherein the DBC substrate comprises a power side with a plurality of power pins and a signal side with a plurality of signal pins. The power device is electrically connected via a bonding wire or the power pin and the control pin.

2. The intelligent power module according to claim 1, characterized in that: The DBC substrate includes an upper copper layer for soldering the power device, an insulating layer for electrical insulation, and a lower copper layer for heat dissipation, which are placed in sequence. The power device transfers heat to the upper copper layer through the thermal conductive medium layer.

3. The intelligent power module according to claim 2, characterized in that: The power device is welded on the DBC substrate through a reflow soldering and eutectic soldering composite process.

4. The intelligent power module according to claim 2, characterized in that: The shell of the DBC substrate is made of epoxy resin with low dielectric constant.

5. The intelligent power module according to claim 1, wherein: Each group of power devices includes a transistor wafer and a diode wafer arranged in an upper and lower arrangement. The transistor wafer and the diode wafer are connected to form a single-tube unit through the bonding wire. The adjacently arranged single-tube units are connected in series through the bonding wire to form a bridge arm.

6. The intelligent power module according to claim 5, characterized in that: The number of the power devices is 8 groups, and the 8 groups of power devices form four bridge arm structures.

7. The intelligent power module according to claim 6, characterized in that: An isolation zone for electrical isolation is provided between the first bridge arm and the second bridge arm and the third bridge arm and the fourth bridge arm of the four bridge arm structures.

8. The intelligent power module according to claim 6, characterized in that: Each bridge arm of the four bridge arm structures includes a high-side power tube and a low-side power tube; The control pin connected to the high-side power tube is connected to the driving ground and the driving signal, and the driving ground corresponding to each high-side power tube is connected to the midpoint of the corresponding phase bridge arm where the high-side power tube is located; The power pin connected to the high-side power tube is connected to the positive end of the DC bus; The control pin connected to the low-side power tube is connected to the drive ground and the drive signal, and the drive ground corresponding to each low-side power tube is connected to the negative end of the DC bus; The power pin connected to the low-side power tube is connected to the midpoint of the corresponding phase bridge arm where the low-side power tube is located inside the intelligent power module through the DBC substrate or PCB, and is connected in series with the high-side power tube through the bonding wire.

9. The intelligent power module according to claim 5, characterized in that: The transistor wafer may be any one of IGBT, MOSFET, SiC MOSFET, and GaN; The diode wafer adopts any one of FRD, SBD and SiC FBD.

10. The intelligent power module according to claim 9, characterized in that: When the transistor wafer adopts an IGBT, the emitter of the transistor wafer is connected to the power pin, and the collector and gate of the transistor wafer are connected to the control pin; When the transistor wafer is a MOSFET or a SiC MOSFET, the drain of the transistor wafer is connected to the power pin, and the source and gate of the transistor wafer are connected to the control pin.

11. The intelligent power module according to any one of claims 1 to 10, characterized in that: It also includes a plurality of driver chips integrated on the DBC substrate, and the driver chips are connected to the power device, the power pins, and the control pins through a micro PCB or the bonding wires.

12. A converter, characterized in that: The intelligent power module comprises the intelligent power module according to any one of claims 1 to 11.

13. A vehicle-mounted charger, characterized in that: Comprising the converter according to claim 12.

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