Substrate support assembly and plasma processing apparatus

Abstract

The substrate support assembly includes a base, a substrate support portion on the base, and a supply portion. The base has a first flow path and a second flow path. The first flow path is a flow path for a first heat transfer medium. The second flow path is a flow path for a second heat transfer medium. The supply unit is connected to the second flow path. The second flow path extends between the first flow path and the substrate support portion. The supply unit is connected to the second flow path so as to supply the second heat transfer medium to the second flow path. The second heat transfer medium is a liquid metal.

Description

TECHNICAL FIELD

[0001] Example embodiments of the present disclosure relate to a substrate support assembly and a plasma processing apparatus. BACKGROUND

[0002] A plasma processing apparatus is used to perform plasma processing on a substrate. A plasma processing apparatus described in Patent Document 1 below is provided with a chamber and a chucking device. The chucking device chucks a substrate. A refrigerant flow path is formed inside the chucking device. Refrigerant is supplied from a refrigerant supply port in the refrigerant flow path. The refrigerant supplied in the refrigerant flow path is discharged from a refrigerant discharge port.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENT

[0005] Patent Document 1: Japanese Patent Application Publication No. 2001-110885 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure provides a technique to improve temperature controllability of a substrate support portion.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] A substrate support assembly is provided in one example embodiment. The substrate support assembly is provided with a base, a substrate support portion on the base, and a supply portion. The base has a first flow path and a second flow path. The first flow path is a flow path for a first heat transfer medium. The second flow path is a flow path for a second heat transfer medium. The supply portion is connected to the second flow path. The second flow path extends between the first flow path and the substrate support portion. The supply portion is connected to the second flow path to supply the second heat transfer medium to the second flow path. The second heat transfer medium is a liquid metal.

[0010] EFFECTS OF THE INVENTION

[0011] According to one example embodiment, temperature controllability of a substrate support portion is improved. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a view for explaining a structure example of a plasma processing system.

[0013] Figure 2 is a view for explaining a structure example of a plasma processing apparatus of a capacitively coupled type.

[0014] Figure 3 is a view schematically showing a substrate support assembly of one example embodiment.

[0015] Figure 4 of (a) toFigure 4 (c) is a view showing an operation of the supply section supplying the second heat transfer medium, respectively.

[0016] Figure 5 is a flowchart of a temperature control method of the substrate support section of one illustrative embodiment.

[0017] Figure 6 is a cross-sectional view of a substrate support assembly of another illustrative embodiment.

[0018] Figure 7 (a) of FIG. 1 is a cross-sectional view of a second flow path of one illustrative embodiment, Figure 7 (b) of FIG. 1 is a cross-sectional view of a second flow path of another illustrative embodiment, Figure 7 (c) of FIG. 1 is a cross-sectional view of a second flow path of yet another illustrative embodiment. DETAILED DESCRIPTION

[0019] Hereinafter, various illustrative embodiments will be described in detail with reference to the accompanying drawings. In the drawings, like elements are denoted by like reference numerals.

[0020] Figure 1 is a view for explaining a structure example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control section 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support assembly 11, and a plasma generating section 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply section 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support assembly 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0021] The plasma generation section 12 is configured to generate plasma from at least one kind of processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space can be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. In addition, various types of plasma generation sections including an AC (Alternating Current) plasma generation section and a DC (Direct Current) plasma generation section can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation section has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0022] The control section 2 processes computer executable commands to cause the plasma processing apparatus 1 to perform various processes described in the present disclosure. The control section 2 can be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control section 2 can be included in the plasma processing apparatus 1. The control section 2 can include a processing section 2a1, a storage section 2a2, and a communication interface 2a3. The control section 2 is implemented by, for example, a computer 2a. The processing section 2a1 can be configured to perform various control actions by reading out a program from the storage section 2a2 and executing the read-out program. The program can be pre-stored in the storage section 2a2 or can be acquired via a medium as necessary. The acquired program is stored in the storage section 2a2 and read out from the storage section 2a2 and executed by the processing section 2a1. The medium can be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing section 2a1 can be a CPU (Central Processing Unit). The storage section 2a2 can include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0023] Hereinafter, a structure example of a capacitively coupled plasma processing apparatus will be described. Figure 2 FIG. 1 is a view for explaining a structure example of a capacitively coupled plasma processing apparatus.

[0024] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support assembly 11 and a gas introduction section. The gas introduction section is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction section includes a shower head 13. The substrate support assembly 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support assembly 11. In one embodiment, the shower head 13 constitutes at least a portion of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support assembly 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support assembly 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0025] The substrate support assembly 11 includes a main body section 5 and a ring assembly 112. The main body section 5 has a central region 5a for supporting a substrate W and a ring-shaped region 5b for supporting the ring assembly 112. A wafer is an example of the substrate W. The ring-shaped region 5b of the main body section 5 encloses the central region 5a of the main body section 5 in plan view. The substrate W is disposed on the central region 5a of the main body section 5, and the ring assembly 112 is disposed on the ring-shaped region 5b of the main body section 5 in such a manner as to enclose the substrate W on the central region 5a of the main body section 5. Thus, the central region 5a is also referred to as a substrate support surface for supporting the substrate W, and the ring-shaped region 5b is also referred to as a ring support surface for supporting the ring assembly 112.

[0026] In one embodiment, the main body 5 includes a base 50 and a substrate support 51. The substrate support 51 is, for example, an electrostatic chuck. The base 50 includes an electrically conductive member. The electrically conductive member of the base 50 can function as a lower electrode. The substrate support 51 is disposed on the base 50. The substrate support 51 includes a ceramic member 51a and an electrostatic electrode 51b disposed in the ceramic member 51a. The ceramic member 51a has a central region 5a. In one embodiment, the ceramic member 51a also has a ring-shaped region 5b. Alternatively, another member that surrounds the substrate support 51, such as a ring-shaped electrostatic chuck or a ring-shaped insulating member, can have the ring-shaped region 5b. In this case, the ring assembly 112 can be disposed on the ring-shaped electrostatic chuck or the ring-shaped insulating member, or on both the substrate support 51 and the ring-shaped insulating member. Further, at least one RF / DC electrode coupled to the RF power source 31 and / or the DC power source 32 described later can be disposed in the ceramic member 51a. In this case, the at least one RF / DC electrode functions as a lower electrode. The RF / DC electrode is also referred to as a bias electrode in the case where a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode. Further, the electrically conductive member of the base 50 and the at least one RF / DC electrode can function as a plurality of lower electrodes. Further, the electrostatic electrode 51b can function as a lower electrode. Thus, the substrate support assembly 11 includes at least one lower electrode.

[0027] The ring assembly 112 includes one or more ring-shaped members. In one embodiment, the one or more ring-shaped members include one or more edge rings and at least one cover ring. The edge rings are formed of an electrically conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0028] The showerhead 13 is configured to introduce at least one process gas from the gas supply portion 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. Further, the showerhead 13 includes at least one upper electrode. Further, the gas introduction portion can include one or more side gas injectors (SGIs) installed to one or more opening portions formed in the sidewall 10a in addition to the showerhead 13.

[0029] The gas supply section 20 can include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply section 20 is configured to supply at least one process gas from the respective corresponding gas source 21 to the showerhead 13 via the respective corresponding flow controller 22. Each flow controller 22 can include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply section 20 can include at least one flow modulation device that modulates or pulses the flow of at least one process gas.

[0030] The power supply 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to the at least one lower electrode and / or the at least one upper electrode. Thereby, a plasma is formed from the at least one process gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a portion of the plasma generation section 12. Further, by supplying a bias RF signal to the at least one lower electrode, a bias potential can be generated at the substrate W to introduce ion components in the formed plasma to the substrate W.

[0031] In one embodiment, the RF power source 31 includes a first RF generation section 31a and a second RF generation section 31b. The first RF generation section 31a is configured to generate a source RF signal (source RF power) for plasma generation via the at least one impedance matching circuit coupled to the at least one lower electrode and / or the at least one upper electrode. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation section 31a can also be configured to generate a plurality of source RF signals having different frequencies. The generated source RF signal(s) is / are supplied to the at least one lower electrode and / or the at least one upper electrode.

[0032] The second RF generation section 31b is configured to generate a bias RF signal (bias RF power) via the at least one impedance matching circuit coupled to the at least one lower electrode. The frequency of the bias RF signal can be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation section 31b can also be configured to generate a plurality of bias RF signals having different frequencies. The generated bias RF signal(s) is / are supplied to the at least one lower electrode. Further, in various embodiments, at least one of the source RF signal and the bias RF signal can be pulsed.

[0033] Further, the power supply 30 can include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating portion 32a and a second DC generating portion 32b. In one embodiment, the first DC generating portion 32a is configured to be connected to the at least one lower electrode and generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generating portion 32b is configured to be connected to the at least one upper electrode and generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0034] In various embodiments, the first and second DC signals can be pulsed. In this case, a sequence of voltage pulses is applied to the at least one lower electrode and / or the at least one upper electrode. The voltage pulses can have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generating portion for generating a sequence of voltage pulses from the DC signal is connected between the first DC generating portion 32a and the at least one lower electrode. Thus, the first DC generating portion 32a and the waveform generating portion constitute a voltage pulse generating portion. In the case where the second DC generating portion 32b and the waveform generating portion constitute the voltage pulse generating portion, the voltage pulse generating portion is connected to the at least one upper electrode. The voltage pulses can have a positive polarity or a negative polarity. Further, the sequence of voltage pulses can include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. Further, the first and second DC generating portions 32a, 32b can be provided in addition to the RF power supply 31, or the first DC generating portion 32a can be provided instead of the second RF generating portion 31b.

[0035] The exhaust system 40 can be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 can include a pressure adjusting valve and a vacuum pump. The pressure adjusting valve is used to adjust the pressure in the plasma processing space 10s. The vacuum pump can include a turbo molecular pump, a dry pump, or a combination thereof.

[0036] Figure 3 FIG. 1 is a schematic view showing a substrate support assembly according to one embodiment. As shown in FIG. 1, the substrate support assembly 11 includes a main body portion 5 and a substrate support portion 51. The main body portion 5 includes a base 50 and a substrate support portion 51 on the base 50. The substrate support portion 51 is provided on the base 50. As shown in FIG. 1, the main body portion 5 of the substrate support assembly 11 can be supported by an insulating member 10b in the chamber 10. The insulating member 10b is provided on the bottom 10c of the chamber 10. Figure 3

[0037] ​The base 50 has a first flow path 50a and a second flow path 80. The first flow path 50a is a flow path for a first heat transfer medium. The first flow path 50a is formed, for example, in the base 50. The first heat transfer medium can be, for example, brine or a refrigerant such as a gas. The substrate support assembly 11 can further include a supply portion 70. The supply portion 70 is connected to the first flow path 50a to supply the first heat transfer medium to the first flow path 50a.

[0038] The second flow path 80 is a flow path for a second heat transfer medium. The second heat transfer medium is a liquid metal. In one embodiment, the liquid metal can be a metal or eutectic alloy having a melting point of -10°C or less at normal pressure (atmospheric pressure) and having a thermal conductivity of 5 W / mK or more. The liquid metal can have a melting point of -15°C or less at normal pressure (atmospheric pressure). The liquid metal is, for example, a Ga-In-Sn alloy. In the Ga-In-Sn alloy, the concentration of Ga can be 62% by mass, the concentration of In can be 25% by mass, and the concentration of Sn can be 13% by mass. As an example, the Ga-In-Sn alloy can be Galinstan (registered trademark).

[0039] The second flow path 80 is separate from the first flow path 50a. The second flow path 80 extends between the first flow path 50a and the substrate support portion 51. The substrate support assembly 11 further includes a supply portion 60. The supply portion 60 is connected to the second flow path 80 to supply the second heat transfer medium to the second flow path 80. In Figure 3 In the example, the supply portion 60 is disposed inside the chamber 10 between the bottom portion 10c and the base 50. However, the supply portion 60 can be disposed outside the chamber 10. The supply portion 60 is insulated from the chamber 10.

[0040] In one embodiment, the plasma processing apparatus 1 can further have at least one heater 51c inside the substrate support portion 51 and a heater controller 90. The heater 51c is provided inside the substrate support portion 51. The heater 51c is disposed, for example, inside the ceramic member 51a of the substrate support portion 51. The heater controller 90 is configured to supply electric power to the heater 51c. The substrate support assembly 11 can include a temperature adjustment module configured to adjust at least one of the substrate support portion 51, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module can include the heater 51c, the heater controller 90, the first flow path 50a, the second flow path 80, the supply portion 60, the supply portion 70, or a combination thereof. In addition, the substrate support assembly 11 can include a heat transfer gas supply portion configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 5a.

[0041] Figure 4 (a) to Figure 4(c) are diagrams showing the operation of the supply unit supplying the second heat transfer medium according to an exemplary embodiment. Figure 4 (a)~ Figure 4 As shown in (c), the supply unit 60 may include a first container 62, a second container 63, and a pressure controller 61. The first container 62 is connected to the first end 80a of the second flow path 80. The second container 63 is connected to the second end 80b of the second flow path 80. The second end 80b is the end of the second flow path 80 opposite to the first end 80a. The supply unit 60 is controlled by, for example, the control unit 2.

[0042] In one embodiment, the supply unit 60 may be configured to selectively supply any one of a plurality of heat transfer media, including the second heat transfer medium, to the second flow path 80. The first container 62 and the second container 63 are each configured to store a plurality of heat transfer media therein. The first container 62 and the second container 63 may each be made of non-metal. For example, the first container 62 and the second container 63 may each be made of resin.

[0043] In one embodiment, the plurality of heat transfer media may have mutually different thermal conductivities. The plurality of heat transfer media may have mutually different specific gravities. The plurality of heat transfer media may further include other liquids in addition to the liquid metal as the second heat transfer medium. The plurality of heat transfer media may further include gas. The other liquid may be a liquid that does not chemically react with the liquid metal and does not contain water. In addition, the other liquid may have a melting point lower than the melting point of the liquid metal. Furthermore, the other liquid may have a thermal conductivity lower than the thermal conductivity of the liquid metal and higher than the thermal conductivity of the gas. Figure 4 (a)~ Figure 4 In the examples shown in (c), the multiple heat transfer media include liquid metal L1 as the second heat transfer medium, silicone oil L2 as a liquid other than liquid metal L1, and nitrogen G as a gas. Instead of silicone oil L2, anhydrous ethanol or a fluorine-based refrigerant liquid may be used as the liquid other than liquid metal L1. The gas may be a rare gas. Furthermore, the multiple heat transfer media may include two or four heat transfer media.

[0044] The first container 62 may have a first opening 62a at its lower portion. The second container 63 may have a second opening 63a at its lower portion. The first opening 62a is connected to the first end 80a via a first pipe 62b. The second opening 63a is connected to the second end 80b via a second pipe 63b.

[0045] The pressure controller 61 can be configured to pressurize one of the first container 62 and the second container 63 and depressurize the other. In one embodiment, each of the first container 62 and the second container 63 can include a bellows portion configured to adjust its volume. Specifically, the first container 62 includes a bellows portion 62c. The bellows portion 62c is configured to adjust the volume of the first container 62. The second container 63 includes a bellows portion 63c. The bellows portion 63c is configured to adjust the volume of the second container 63.

[0046] The pressure controller 61 may also include a drive mechanism 64. The drive mechanism 64 is configured to contract the bellows of one of the first container 62 and the second container 63, and to extend the bellows of the other container. This reduces the volume of one container while increasing the volume of the other. The drive mechanism 64 may include a drive portion 64a and a drive portion 64b. The drive portion 64a causes the bellows 62c to expand and contract. The drive portion 64b causes the bellows 63c to expand and contract. The drive portions 64a and 64b may form a seesaw mechanism connected to each other with a fulcrum sandwiched between them. In this case, when the drive portion 64a descends and the drive portion 64b ascends, the bellows 62c contracts and the bellows 63c extends. As a result, the volume of the first container 62 decreases, thereby pressurizing the first container 62, while the volume of the second container 63 increases, thereby depressurizing the second container 63. When the driving part 64a rises and the driving part 64b falls, the bellows 62c expands and the bellows 63c contracts. The volume of the first container 62 increases and the first container 62 is depressurized, while the volume of the second container 63 decreases and the second container 63 is pressurized.

[0047] exist Figure 4 In the example (a), liquid metal L1, silicone oil L2, and nitrogen G are contained in the first container 62. Liquid metal L1, silicone oil L2, and nitrogen G are arranged in the first container 62 in this order from the bottom, based on their specific gravities. Liquid metal L1 is contained in the first container 62 at a lower position than silicone oil L2 and nitrogen G. Nitrogen G is filled in the second flow path 80.

[0048] Figure 4 (b) means Figure 4 The state shown in (a) is compared to the state in which the driving part 64a is lowered and the driving part 64b is raised. As described above, if the driving part 64a is lowered and the driving part 64b is raised, the first container 62 is pressurized and the volume of the second container 63 is depressurized. Therefore, the liquid metal L1 is supplied from the pressurized first container 62 to the second flow path 80 via the first opening 62a and the first piping 62b. The nitrogen G filled in the second flow path 80 is squeezed out by the supplied fluid metal L and is accommodated in the second container 63 after depressurization. As a result,Figure 4 In the state shown in (b), the second flow path 80 is filled with liquid metal L1, and the pressure in the first container 62 is balanced with the pressure in the second container 63. Furthermore, silicone oil L2 and nitrogen G remain in the first container 62. Silicone oil L2 and nitrogen G are arranged in this order from the bottom of the first container 62 based on their specific gravities. Silicone oil L2 is stored in the first container 62 below nitrogen G.

[0049] Figure 4 (c) indicates that Figure 4 The state shown in (b) is a state where the driving part 64a is lowered and the driving part 64b is raised. The silicone oil L2 is supplied from the pressurized first container 62 to the second flow path 80 through the first opening 62a and the first pipe 62b. The liquid metal L1 filled in the second flow path 80 is squeezed out by the supplied silicone oil L2 and is accommodated in the decompressed second container 63. As a result, Figure 5 In the state shown in (c), the second flow path 80 is filled with the silicone oil L2, and the pressure of the first container 62 is balanced with the pressure of the second container 63.

[0050] The drive mechanism 64 can also be operated to Figure 5 In state (c), the driving unit 64a is lowered and the driving unit 64b is raised. As a result, nitrogen G is supplied from the pressurized first container 62 to the second flow path 80 via the first opening 62a and the first pipe 62b. The silicone oil L2 filling the second flow path 80 is squeezed out by the supplied nitrogen G and is stored in the depressurized second container 63.

[0051] Alternatively, the pressure controller 61 may pressurize the second container 63 and depressurize the first container 62 in order to supply any one of the liquid metal L1 , silicone oil L2 , and nitrogen G in the second container 63 from the second container 63 to the second flow path 80 .

[0052] In one embodiment, the controller 2 may control the supply unit 60 during the first period T1 to discharge the liquid metal L1 from the second flow path 80. Alternatively, the controller 2 may control the supply unit 60 during the second period T2 different from the first period T1 to supply the liquid metal L1 to the second flow path 80.

[0053] In one embodiment, the control section 2 can also control the heater controller 90 in the first period Tl to supply electric power to the heater 51c, and control the supply section 60 to discharge the liquid metal Ll from the second flow path 80. In this case, in the first period Tl, heat exchange between the base 50 and the substrate support section 51 is suppressed, and the substrate W is efficiently heated. The control section 2 can also control the supply section 60 in the second period T2 to supply the liquid metal Ll to the second flow path 80. In this case, in the second period T2, heat exchange between the base 50 and the substrate support section 51 is promoted, and the substrate W is efficiently cooled. In addition, the supply section 70 can supply the refrigerant to the first flow path 50a in the first period Tl and the second period T2, respectively. The supply section 70 can also supply the refrigerant to the first flow path 50a only in the second period T2.

[0054] In one embodiment, the supply section 60 can be configured to selectively supply one of a plurality of heat transfer media including the liquid metal Ll and a gas to the second flow path 80. The gas can be nitrogen G. In the first period Tl, the control section 2 can control the supply section 60 to supply the nitrogen G to the second flow path 80.

[0055] Hereinafter, a temperature control method of a substrate support section according to one illustrative embodiment will be described with reference to the drawings. Figure 5 A temperature control method of a substrate support section according to one illustrative embodiment will be described. Figure 6 FIG. 8 is a flowchart of a temperature control method of a substrate support section according to one illustrative embodiment. Figure 6 The temperature control method illustrated in FIG. 8 (hereinafter referred to as "method MT") can be performed in a state where a substrate W is loaded on the substrate support section 51 in the chamber 10. The method MT can include a plasma treatment of the substrate W.

[0056] The method MT starts with a step STa. In the step STa, the liquid metal Ll is discharged from the second flow path 80. In one embodiment, a gas can be supplied to the second flow path 80 in the step STa. The gas can be nitrogen G. It can be that the liquid metal Ll in the second flow path 80 is pushed out from the second flow path 80 by the supplied nitrogen G.

[0057] The step STb is performed in parallel with the step STa or after the step STa. In the step STb, supply of electric power to the heater 51c is started. As a result, the heater 51c generates heat, and the substrate W on the substrate support section 51 is heated. In addition, the method MT can start with the step STb in a case where the liquid metal Ll is not filled in the second flow path 80 even if the step STa is not performed.

[0058] In the step STc, supply of electric power to the heater 51c is stopped. As a result, the generation of heat by the heater 51c is stopped.

[0059] The process STd is performed in parallel with the process STc or after the process STc. In the process STd, the liquid metal L1 is supplied to the second flow path 80. In one embodiment, it can be that, in the process STd, the nitrogen G is exhausted from the second flow path 80. The liquid metal L1 can be filled in the second flow path 80 by being sucked into the second flow path 80 after the nitrogen G is exhausted.

[0060] It can be that the processes STa and STb are performed for heating the substrate W in the first period T1. It can be that the processes STc and STd are performed for cooling the substrate W in the second period T2. Further, the processes STc and STd can be performed after the processes STa and STb or can be performed before the processes STa and STb.

[0061] As described above, in the substrate support assembly 11, the base 50 has the first flow path 50a and the second flow path 80 inside thereof. The second flow path 80 is arranged at a position closer to the substrate support portion 51 than the first flow path 50a. In a state where the liquid metal L1 is supplied to the second flow path 80, the efficiency of heat exchange between the first heat transfer medium and the substrate support portion 51 is high. Therefore, in this state, the temperature of the substrate support portion 51 can be controlled so that the temperature of the substrate support portion 51 approaches the temperature of the first heat transfer medium. In a state where the liquid metal L1 is not supplied to the second flow path 80, the efficiency of heat exchange between the first heat transfer medium and the substrate support portion 51 is low. Therefore, in this state, the temperature of the substrate support portion 51 can be controlled so that the temperature of the substrate support portion 51 deviates from the temperature of the first heat transfer medium. Thus, in the substrate support assembly 11, the temperature control property of the substrate support portion 51 is high.

[0062] Hereinafter, the substrate support assembly according to another example embodiment will be described with reference to the drawings. Figure 6 A substrate support assembly according to another example embodiment will be described. Figure 7 is a cross-sectional view of a substrate support assembly according to another example embodiment. Figure 7 The substrate support assembly 11A shown in the figure can be employed in place of the substrate support assembly 11 in the plasma processing apparatus 1. Hereinafter, the substrate support assembly 11A will be described from the viewpoint of the differences from the substrate support assembly 11.

[0063] In the substrate support assembly 11A, the base 50 can have a first base 52, a second base 53, and a support member 54. The first base 52 supports the substrate support portion 51 provided thereon. The second base 53 has the first flow path 50a inside thereof. The support member 54 supports the first base 52 between the first base 52 and the second base 53. The support member 54 divides the second flow path 80 between the first base 52 and the second base 53.

[0064] In one embodiment, the thermal conductivity of the material of the support member 54 can be lower than the thermal conductivity of the material of the base 50. The thermal conductivity of the material of the support member 54 can be 1 W / mK or less. The support member 54 is made of at least one material selected from the group consisting of a resin material, a ceramic, and a composite material, for example. The support member 54 can also be made of a fluororesin. The support member can also be made of at least one material selected from the group consisting of polytetrafluoroethylene, polyether ether ketone, and porous ceramic. The support member 54 can also be made of a composite material. The composite material is a material made by combining two or more different raw materials. For example, the composite material is a material made by combining two or more raw materials selected from the group consisting of a resin, a metal, glass, and carbon.

[0065] In one embodiment, the substrate support assembly 11A can further have a first protective layer 55a on the first base 52 and a second protective layer 55b on the second base 53. The first protective layer 55a is formed on the surface of the first base 52 in a manner to be interposed between the second flow path 80 and the support member 54, respectively, and the first base 52. The second protective layer 55b is formed on the surface of the second base 53 in a manner to be interposed between the second flow path 80 and the support member 54, respectively, and the second base 53. In this case, the second flow path 80 can be formed by the first protective layer 55a, the second protective layer 55b, and the support member 54. The first protective layer 55a and the second protective layer 55b can each have a higher thermal conductivity than the thermal conductivity of the support member 54. For example, the thermal conductivity of the material of each of the first protective layer 55a and the second protective layer 55b can be higher than the thermal conductivity of the material of the support member 54.

[0066] In one embodiment, the first protective layer 55a and the second protective layer 55b can each be made of at least one material selected from the group consisting of graphite, a carbon nanotube, and columnar aluminum nitride. The first protective layer 55a and the second protective layer 55b can each also be made of a composite material in which a carbon nanotube or columnar aluminum nitride is the main component. The first protective layer 55a and the second protective layer 55b can each also be made of a material having a higher thermal conductivity in the horizontal direction than in the vertical direction. The vertical direction is the thickness direction of each of the first protective layer 55a and the second protective layer 55b. The horizontal direction is a direction orthogonal to the thickness direction of each of the first protective layer 55a and the second protective layer 55b. The thermal conductivity in the horizontal direction of each of the first protective layer 55a and the second protective layer 55b can be, for example, 10 times or more the thermal conductivity in the vertical direction of each of the first protective layer 55a and the second protective layer 55b. The thermal conductivity in the horizontal direction of each of the first protective layer 55a and the second protective layer 55b can also be higher than the thermal conductivity of each of the first base 52 and the second base 53. In addition, graphite has a layered structure. The thermal conductivity in the direction along the layers of graphite (horizontal direction) is higher than the thermal conductivity in the direction orthogonal to the layers of graphite (vertical direction or thickness direction).

[0067] In one embodiment, the first protective layer 55a and the second protective layer 55b can each have electrical conductivity. The first protective layer 55a and the second protective layer 55b can each be made of graphite as a material having electrical conductivity.

[0068] In one embodiment, the first base 52 and the second base 53 can each be made of at least one material selected from the group consisting of SiC, a metal composite, and a metal. The metal can be stainless steel, titanium, or molybdenum. The first base 52 and the second base 53 can each also be made of a metal that is difficult to embrittle due to the liquid metal L1. The first base 52 and the second base 53 can each also be made of a non-metal. The first base 52 and the second base 53 can each also be formed of SiC. SiC is a non-metal and has no electrical conductivity. The metal composite refers to a composite material in which a metal is the main component.

[0069] In one embodiment, the substrate support assembly 11A can further have an electrically conductive layer 56. The electrically conductive layer 56 covers the surface of the base 50. The electrically conductive layer 56 has electrical conductivity. The electrically conductive layer 56 is made of, for example, aluminum that is sputtered on the surface of the base 50. The electrically conductive layer 56 can cover the upper surface of the base 50, the side surface of the base 50, and the bottom surface of the base 50. The electrically conductive layer 56 is electrically connected to the first protective layer 55a and the second protective layer 55b. The electrically conductive layer 56 can also be electrically connected to the power supply 30.

[0070] The substrate support assembly 11A can also have an electrically conductive member 57. The electrically conductive member 57 is electrically connected to the first protective layer 55a and the second protective layer 55b. The electrically conductive member 57 is, for example, a copper tape. The electrically conductive layer 56 covers the electrically conductive member 57. The electrically conductive member 57 is electrically connected to the electrically conductive layer 56.

[0071] The substrate support assembly 11A can also have an insulating layer 58. The insulating layer 58 covers the electrically conductive layer 56. The insulating layer 58 has insulating properties. The insulating layer 58 is made of, for example, yttrium oxide that is sputtered on the electrically conductive layer 56. The insulating layer 58 can also be made of, for example, yttrium oxide. The insulating layer 58 can also be made of another insulating material such as aluminum oxide or yttrium fluoride. The insulating layer 58 can also provide an opening 58a in the lower surface of the base 50. A portion of the electrically conductive layer 56 is exposed from the opening 58a. The electrically conductive layer 56 can be electrically connected to the power supply 30 in the portion of the electrically conductive layer 56 exposed from the opening 58a.

[0072] In the substrate support assembly 11A, the liquid metal L1 supplied to the second flow path 80, the first protective layer 55a, the second protective layer 55b, and the electrically conductive layer 56 are each electrically connected to be at the same potential. Thus, the substrate support assembly 11A can suppress abnormal discharge caused by a potential difference.

[0073] In one embodiment, the substrate support assembly 11A can further include a bonding layer 59 between the base 50 and the substrate support portion 51. The bonding layer 59 is provided between the base 50 and the substrate support portion 51. The bonding layer 59 bonds the base 50 and the substrate support portion 51 to each other. The bonding layer 59 can be provided between the first base 52 and the substrate support portion 51. The bonding layer 59 can bond the first base 52 and the substrate support portion 51 to each other. The bonding layer 59 is made of a material having a thermal conductivity of 2 W / mK or more and 20 W / mK or less. For example, the bonding layer 59 can be an adhesive sheet composed of an organic adhesive containing a thermally conductive filler. The bonding layer 59 can absorb a deformation generated between the base 50 and the substrate support portion 51. The deformation is caused by a difference between a thermal expansion rate of the base 50 and a thermal expansion rate of the substrate support portion 51. In one embodiment, the thickness of the bonding layer 59 can be 25 μm or more and 300 μm or less.

[0074] Next, various exemplary embodiments of the second flow path will be described. Figure 7 FIG. 18 is a cross-sectional view of the second flow path of one exemplary embodiment. Figure 7 FIG. 18(a) shows the shape of the second flow path 80 and the support member 54 as viewed from the vertical direction. The second flow path 80 can include at least one flow path. The at least one flow path extends in a spiral shape between the center of the base 50 and the outer edge of the base 50. As shown in FIG. 18(a), the second flow path 80 can include a single flow path. Figure 7 As shown in FIG. 18(a), the second flow path 80 can include a single flow path. Figure 7 The second flow path 80 shown in FIG. 18(a), i.e., the single flow path, extends in a spiral shape between the center of the base 50 and the outer edge of the base 50. The second flow path 80 can extend in a spiral shape from a first end 80a to a second end 80b. The first end 80a is disposed, for example, at the center of the base 50. The second end 80b is disposed, for example, at the outer edge of the base 50.

[0075] Figure 7 FIG. 19 is a cross-sectional view of the second flow path of another exemplary embodiment. Figure 7 FIG. 19(b) shows the shape of the second flow path 80A and the support member 54A as viewed from the vertical direction. In one embodiment, the base 50 can include a central region 50b and an outer region 50c. The central region 50b includes the center of the base 50. The central region 50b includes, for example, the substrate support surface (central region 5a) of the main body 5. The outer region 50c surrounds the central region 50b. The outer region 50c includes, for example, the ring support surface (ring-shaped region 5b) of the main body 5. The second flow path 80 can include a plurality of flow paths as the at least one flow path. The plurality of flow paths respectively extend in a spiral shape in the central region 50b and the outer region 50c. The plurality of flow paths extend in a spiral shape from respective first ends disposed in the central region 50b to respective second ends disposed in the outer region 50c.

[0076] exist Figure 7 In the example (b), the second flow path 80A includes a flow path 81, a flow path 82, and a flow path 83. The first end 81a of flow path 81, the first end 82a of flow path 82, and the first end 83a of flow path 83 are located in the central region 50b. The second end 81b of flow path 81, the second end 82b of flow path 82, and the second end 83b of flow path 83 are located in the outer region 50c. The flow paths 81, 82, and 83 extend in a spiral shape from the first ends 81a, 82a, and 83a located in the central region 50b to the second ends 81b, 82b, and 83b located in the outer region 50c. In this case, the first container 62 can be connected to the first ends 81a, 82a, and 83a, respectively. Alternatively, the second container 63 can be connected to the second ends 81b, 82b, and 83b, respectively.

[0077] exist Figure 7 In the example of (b), the liquid metal L1 can be supplied to each of the plurality of flow paths 81, 82, and 83 constituting the second flow path 80A. Figure 7 In the embodiment in which liquid metal can be supplied to a plurality of flow paths constituting the second flow path as in the example of (b), both the speed of supplying the liquid metal L1 to the second flow path and the speed of discharging the liquid metal L1 from the second flow path can be increased.

[0078] Figure 7 (c) is a cross-sectional view of the second flow path according to yet another exemplary embodiment. Figure 7 The example of (c) shows the shape of the second flow path 80B and the support member 54B as viewed from the vertical direction. In one embodiment, the base 50 may include a plurality of regions including a central region 50b and an outer region 50c. The second flow path 80B may include a plurality of flow paths as at least one flow path, and the plurality of flow paths may be respectively divided into the plurality of regions of the base 50. In addition, the plurality of regions may also include one or more other regions between the central region 50b and the outer region 50c. The plurality of flow paths may also be respectively divided into the central region 50b, the outer region 50c, and one or more other regions.

[0079] Specifically, in ​ In the example of (c), the second flow path 80B includes a flow path 84 and another flow path 85 as at least one flow path. The flow path 84 extends in a spiral shape in the central region 50b. The other flow path 85 extends in a spiral shape in the outer region 50c.

[0080] The flow path 84 can extend spirally from its first end 84a to its second end 84b. The first end 84a is provided, for example, at the center of the central region 50b. The second end 84b is provided, for example, at the outer edge of the central region 50b. The other flow path 85 can extend spirally from its first end 85a to its second end 85b. The first end 85a is provided, for example, at the inner edge of the outer side region 50c. The second end 85b is provided, for example, at the outer edge of the outer side region 50c.

[0081] In the example of (c) of the embodiment in which the plurality of flow paths are respectively divided in the plurality of regions of the base 50, one or more of the supply portions can be connected to the plurality of flow paths in a manner that enables independent change of the type of heat transfer medium supplied to the plurality of flow paths. In this case, the efficiency of heat exchange between the first heat transfer medium and the substrate support portion 51 can be independently controlled in each of the plurality of regions of the base 50. Thus, the temperature of the plurality of regions of the substrate W located above each of the plurality of regions of the base 50 can be independently controlled. ​

[0082] The above describes various illustrative embodiments, but is not limited to the above-described illustrative embodiments, and various additions, omissions, substitutions, and changes can be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0083] For example, the first container 62 can not have the corrugated portion 62c. In addition, the second container 63 can not have the corrugated portion 63c. The first container 62 and the second container 63 can each be composed of a cylinder and a piston. Each piston can be configured to adjust the volume of each cylinder. The drive mechanism 64 can be configured to operate each piston of the first container 62 and the second container 63. The pressure controller 61 can not have the drive mechanism 64. For example, the pressure controller 61 can be a gas pump. The gas pump can inject nitrogen G into each of the first container 62 and the second container 63 or discharge nitrogen G from each of the first container 62 and the second container 63, thereby directly pressurizing or depressurizing each of the first container 62 and the second container 63.

[0084] In yet another illustrative embodiment, the base can not have the first flow path 50a. The substrate support assembly of the yet another illustrative embodiment includes a base having a second flow path 80, a substrate support portion 51 on the base, a supply portion, and a heat transfer gas supply portion. The supply portion is connected to the second flow path 80. The supply portion is configured to supply a heat transfer medium containing liquid metal L1 to the second flow path 80 and configured to recover the heat transfer medium from the second flow path 80. The heat transfer gas supply portion is configured to supply a heat transfer gas to a gap between the surface of the substrate support portion 51 and a substrate W supported by the substrate support portion 51.

[0085] ​Herein, various exemplary embodiments included in the present disclosure are described in the following [E1] to [E30].

[0086] [E1]

[0087] A substrate support assembly includes a base having a first flow path for a first heat transfer medium and a second flow path for a second heat transfer medium, a substrate support portion on the base, and a supply portion connected to the second flow path, the second flow path extending between the first flow path and the substrate support portion, the supply portion being connected to the second flow path to supply the second heat transfer medium as a liquid metal to the second flow path.

[0088] [E2]

[0089] The substrate support assembly according to [E1], the liquid metal having a melting point of -10°C or lower and a thermal conductivity of 5 W / mK or higher at an atmospheric pressure.

[0090] [E3]

[0091] The substrate support assembly according to [E1] or [E2], the supply portion being configured to selectively supply one of a plurality of heat transfer media including the second heat transfer medium to the second flow path.

[0092] [E4]

[0093] The substrate support assembly according to [E3], the plurality of heat transfer media having mutually different thermal conductivities.

[0094] [E5]

[0095] The substrate support assembly according to [E3] or [E4], the plurality of heat transfer media having mutually different specific gravities.

[0096] [E6]

[0097] The substrate support assembly according to any one of [E3] to [E4], the plurality of heat transfer media including a liquid different from the second heat transfer medium as the liquid metal.

[0098] [E7]

[0099] The substrate support assembly according to any one of [E3] to [E6], the plurality of heat transfer media including a gas.

[0100] [E8]

[0101] The substrate support assembly according to any one of [E3] to [E7], the supply portion having:

[0102] a first container configured to be able to store the plurality of heat transfer media therein, connected to a first end of the second flow path;

[0103] a second container configured to be able to store the plurality of heat transfer media therein, connected to a second end of the second flow path on the opposite side from the first end; and

[0104] a pressure controller configured to pressurize one of the first container and the second container and depressurize the other of the first container and the second container.

[0105] [E9]

[0106] The substrate support assembly according to [E8], the first container and the second container each have a corrugated portion configured to be able to adjust a volume thereof, and the pressure controller has a drive mechanism configured to contract the corrugated portion of one of the first container and the second container to decrease the volume of the one container and elongate the corrugated portion of the other of the first container and the second container to increase the volume of the other container.

[0107] [E10]

[0108] The substrate support assembly according to any one of [El] to [E9], the base table has a first base table on which the substrate support portion is disposed, a second base table having the first flow path inside thereof, and a support member interposed between the first base table and the second base table to support the first base table, the second flow path being divided between the first base table and the second base table.

[0109] [E11]

[0110] The substrate support assembly according to [E10], the support member has a material having a thermal conductivity less than a thermal conductivity of a material of the base table.

[0111] [E12]

[0112] The substrate support assembly according to [E10] or [El l], the support member has a material having a thermal conductivity of 1 W / mK or less.

[0113] [E13]

[0114] The substrate support assembly according to any one of [E10] to [E12], the support member is made of a fluororesin.

[0115] [E14]

[0116] The substrate support assembly according to any one of [E10] to [E12], wherein the support member is made of at least one material selected from the group consisting of a resin material, a ceramic, and a composite material.

[0117] [E15]

[0118] The substrate support assembly according to any one of [E10] to [E14], wherein the first base further has a first protective layer on the first base interposed between the second flow path and the support member each and the first base, and a second protective layer on the second base interposed between the second flow path and the support member each and the second base, the second flow path being formed by the first protective layer, the second protective layer, and the support member, the first protective layer and the second protective layer each having a higher thermal conductivity than that of the support member.

[0119] [E16]

[0120] The substrate support assembly according to [E15], wherein the first base and the second base are each made of a non-metal.

[0121] [E17]

[0122] The substrate support assembly according to [E16], wherein the first protective layer and the second protective layer each have an electrical conductivity.

[0123] [E18]

[0124] The substrate support assembly according to [E17], further comprising an electrically conductive layer covering a surface of the base, the electrically conductive layer being electrically connected to the first protective layer and the second protective layer.

[0125] [E19]

[0126] The substrate support assembly according to [E15], wherein the first base and the second base are each made of at least one material selected from the group consisting of SiC, a metal composite, and a metal.

[0127] [E20]

[0128] The substrate support assembly according to [E15], wherein the first protective layer and the second protective layer are each made of at least one material selected from the group consisting of graphite, a carbon nanotube, and a columnar aluminum nitride.

[0129] [E21]

[0130] The substrate support assembly according to any one of [E1] to [E20], further comprising a joining layer joining the base and the substrate support portion to each other between the base and the substrate support portion, the joining layer being made of a material having a thermal conductivity of 2 W / mK or more and 20 W / mK or less.

[0131] [E22]

[0132] The substrate support assembly according to [E21], the joining layer having a thickness of 25 μm or more and 300 μm or less.

[0133] [E23]

[0134] The substrate support assembly according to any one of [E1] to [E22], the second flow path including at least one flow path extending in a spiral shape between a center of the base and an outer edge of the base.

[0135] [E24]

[0136] The substrate support assembly according to [E23], the base including a central region including a center of the base and an outer region surrounding the central region, the second flow path including, as the at least one flow path, a plurality of flow paths extending in a spiral shape in the central region and the outer region.

[0137] [E25]

[0138] The substrate support assembly according to [E23], the base including a central region including a center of the base and an outer region surrounding the central region, the second flow path including, as the at least one flow path, a flow path extending in a spiral shape in the central region and another flow path extending in a spiral shape in the outer region.

[0139] [E26]

[0140] A substrate support assembly comprising: a base having a flow path; a substrate support portion on the base; a supply portion configured to be connected to the flow path to supply a heat transfer medium including a liquid metal to the flow path and to recover the heat transfer medium from the flow path; and a heat transfer gas supply portion configured to supply a heat transfer gas to a gap between a surface of the substrate support portion and a substrate supported by the substrate support portion.

[0141] [E27]

[0142] A plasma processing apparatus comprising: a chamber; and the substrate support assembly according to any one of [E1] to [E26], the base and the substrate support portion being disposed in the chamber.

[0143] [E28]

[0144] The plasma processing apparatus according to [E27], further comprising a control portion configured to control the supply portion to discharge the second heat transfer medium from the second flow path during a first period, and to control the supply portion to supply the second heat transfer medium to the second flow path during a second period different from the first period.

[0145] [E29]

[0146] The plasma processing apparatus according to [E28], further comprising: a heater within the substrate support portion; and a heater controller configured to supply electric power to the heater, wherein the control portion is configured to control the heater controller to supply electric power to the heater during a period in which the substrate is heated, and to control the supply portion to discharge the second heat transfer medium from the second flow path, and to control the supply portion to supply the second heat transfer medium to the second flow path during a period in which the substrate is cooled.

[0147] [E30]

[0148] The plasma processing apparatus according to [E29], wherein the supply portion is configured to selectively supply one of a plurality of heat transfer media including the second heat transfer medium and a gas to the second flow path, and the control portion is configured to control the supply portion to supply the gas to the second flow path during the period in which the substrate is heated.

[0149] From the above description, it is understood that the various embodiments of the present disclosure are described in the present specification for the purpose of illustration, and various changes can be made without departing from the scope and spirit of the present disclosure. Therefore, the various embodiments disclosed in the present specification are not intended to be limiting, and the true scope and spirit are represented by the appended claims.

[0150] Explanation of Reference Numerals

[0151] 1…plasma processing apparatus, 2…control unit, 10…chamber, 11…substrate support assembly, 50…base, 50b…central region, 50c…outer region, 51…substrate support portion, 51c…heater, 54, 54A, 54B…support member, 55a…first protective layer, 55b…second protective layer, 56…conductive layer, 59…bonding layer, 60…supply portion, 61…pressure controller, 62…first container, 63…second container, 62c, 63c…corrugated portion, 64…drive mechanism, 80, 80A, 80B…second flow path, 81, 82, 83, 84, 85…flow path, 80a, 81a, 82a, 83a, 84a, 85a…first end, 80b, 81b, 82b, 83b, 85b…second end, 90…heater controller, L1…liquid metal, L2…silicone oil, G…nitrogen, T1…first period, T2…second period, W…substrate.

Claims

1. A substrate support assembly, characterized in that: have: a base having a first flow path for a first heat transfer medium and a second flow path for a second heat transfer medium; a substrate support portion on the base; as well as a supply portion connected to the second flow path, The second flow path extends between the first flow path and the substrate support portion, The supply unit is connected to the second flow path to supply the second heat transfer medium, which is liquid metal, to the second flow path.

2. The substrate support assembly according to claim 1, wherein: The liquid metal has a melting point of -10°C or lower and a thermal conductivity of 5 W / mK or higher under atmospheric pressure.

3. The substrate support assembly according to claim 1, wherein: The supply unit is configured to selectively supply any one of a plurality of heat transfer media including the second heat transfer medium to the second flow path.

4. The substrate support assembly according to claim 3, wherein: The plurality of heat transfer media have different thermal conductivities.

5. The substrate support assembly according to claim 4, wherein: The plurality of heat transfer media have different specific gravities.

6. The substrate support assembly according to claim 5, wherein: The plurality of heat transfer media include a liquid different from the second heat transfer medium which is the liquid metal.

7. The substrate support assembly according to claim 5, wherein: The plurality of heat transfer media includes a gas.

8. The substrate support assembly according to any one of claims 3 to 7, wherein: The supply unit includes: a first container configured to store the plurality of heat transfer media therein and connected to the first end of the second flow path; a second container configured to store the plurality of heat transfer media therein and connected to a second end of the second flow path opposite to the first end; as well as The pressure controller is configured to pressurize one of the first container and the second container and to depressurize the other of the first container and the second container.

9. The substrate support assembly according to claim 8, wherein: The first container and the second container each have a bellows portion configured to be able to adjust the volume thereof. The pressure controller has a driving mechanism, which is configured to: contract the corrugated portion of one of the first container and the second container to reduce the volume of the one container, and extend the corrugated portion of the other of the first container and the second container to increase the volume of the other container.

10. The substrate support assembly of claim 1, wherein: The base station has: a first base on which the substrate support portion is disposed; a second base having the first flow path therein; and The support member is interposed between the first base and the second base to support the first base, and defines the second flow path between the first base and the second base.

11. The substrate support assembly of claim 10, wherein: The thermal conductivity of the material of the support member is lower than the thermal conductivity of the material of the base.

12. The substrate support assembly of claim 10, wherein: The thermal conductivity of the material of the supporting member is 1 W / mK or less.

13. The substrate support assembly of claim 10, wherein: The supporting member is made of fluororesin.

14. The substrate support assembly of claim 10, wherein: The support member is made of at least one material selected from the group consisting of resin materials, ceramics, and composite materials.

15. The substrate support assembly of claim 10, wherein: The base station also has: a first protective layer on the first base, interposed between the second flow path and the supporting member and the first base; and The second protective layer on the second base is interposed between the second flow path and the supporting member and the second base. The second flow path is defined by the first protective layer, the second protective layer, and the supporting member. The first protective layer and the second protective layer each have a thermal conductivity higher than a thermal conductivity of the support member.

16. The substrate support assembly of claim 15, wherein: The first base and the second base are respectively made of non-metal.

17. The substrate support assembly of claim 16, wherein: The first protective layer and the second protective layer are both conductive.

18. The substrate support assembly of claim 17, wherein: further comprising a conductive layer covering the surface of the base, The conductive layer is electrically connected to the first protection layer and the second protection layer.

19. The substrate support assembly of claim 15, wherein: The first base and the second base are each made of at least one material selected from the group consisting of SiC, a metal composite material, and metal.

20. The substrate support assembly of claim 15, wherein: The first protection layer and the second protection layer are respectively made of at least one material selected from the group consisting of graphite, carbon nanotubes, and columnar aluminum nitride.

21. The substrate support assembly of claim 1, wherein: A bonding layer for bonding the base and the substrate support to each other is further provided between the base and the substrate support. The bonding layer is made of a material having a thermal conductivity of 2 W / mK or more and 20 W / mK or less.

22. The substrate support assembly of claim 21, wherein: The thickness of the bonding layer is 25 μm or more and 300 μm or less.

23. The substrate support assembly of claim 1, wherein: The second flow path includes at least one flow path extending in a spiral shape between the center of the base and the outer edge of the base.

24. The substrate support assembly of claim 23, wherein: The base includes a central area including the center of the base and an outer area surrounding the central area. The second flow path includes a plurality of flow paths extending in a spiral shape in the central region and the outer region as the at least one flow path.

25. The substrate support assembly of claim 23, wherein: The base includes a central area including the center of the base and an outer area surrounding the central area. The second flow path includes, as the at least one flow path, a flow path extending in a spiral shape in the central region and another flow path extending in a spiral shape in the outer region.

26. A substrate support assembly, characterized in that have: Abutment, with flow path; a substrate support portion on the base; a supply unit configured to be connected to the flow path and capable of supplying a heat transfer medium including liquid metal to the flow path and recovering the heat transfer medium from the flow path; as well as The heat transfer gas supply unit is configured to supply a heat transfer gas to a gap between a surface of the substrate support unit and a substrate supported by the substrate support unit.

27. A plasma processing device, characterized in that: have: chamber; and The substrate support assembly according to claim 1, The base and the substrate support are arranged in the chamber.

28. The plasma processing apparatus according to claim 27, wherein: It also has a control unit. The control unit is composed of: During a first period, the supply unit is controlled to discharge the second heat transfer medium from the second flow path. The supply unit is controlled to supply the second heat transfer medium to the second flow path during a second period different from the first period.

29. The plasma processing apparatus according to claim 28, wherein Also features: A heater within the substrate support; and a heater controller configured to supply electric power to the heater, The control unit is composed of: During heating of the substrate, the heater controller is controlled to supply power to the heater, and the supply unit is controlled to discharge the second heat transfer medium from the second flow path. While the substrate is being cooled, the supply unit is controlled to supply the second heat transfer medium to the second flow path.

30. The plasma processing apparatus according to claim 29, wherein The supply unit is configured to selectively supply one of a plurality of heat transfer media including the second heat transfer medium and gas to the second flow path. The control unit is configured to control the supply unit to supply the gas to the second flow path during the period of heating the substrate.

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