Laser generator and forming process thereof

Abstract

The embodiment of the invention provides a laser generator and a forming process thereof. The laser generator comprises a laser generating structure, an antireflection film, a reflecting film, a first electrode and a second electrode, the top of the laser generating structure is provided with a ridge waveguide structure, the antireflection film and the reflecting film are arranged on the front end face and the rear end face of the laser generating structure respectively, and a resonant cavity is formed between the antireflection film and the reflecting film; the first electrode and the second electrode are arranged at the bottom of the laser generating structure and the top of the ridge waveguide structure respectively, forward bias voltage can be applied to the laser generating structure, the laser generator is further provided with the current non-injection layer and the third electrode, and the current non-injection layer is separated from the antireflection film and the reflecting film, so that forward bias voltage can be applied to the laser generating structure. Therefore, the effect of the third electrode is ensured, the phenomenon that the current non-injection layer introduces cavity surface defects can be effectively avoided, and the stability of the laser generator is remarkably improved.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a laser generator and a forming process thereof. Background Art

[0002] Semiconductor laser generators are core components of optoelectronic technology. With their advantages of small size, high conversion efficiency and easy integration, they play an irreplaceable role in optical communications, laser processing and other fields.

[0003] However, as the output power of the laser generator increases, the temperature of the laser generator rises sharply, especially in the cavity surface area. Excessively high temperature and optical power density can cause the cavity surface to melt and recrystallize, generating a large number of lattice defects and causing catastrophic damage to the optical mirror surface. This damage is irreversible and therefore seriously affects the service life and operating stability of the laser generator. To this end, a series of new structures have been proposed, including the establishment of aluminum-free quantum well structures to reduce the easy oxidation of aluminum in the active region and the generation of dark line defects, thereby alleviating the cavity surface catastrophic problem. Large optical cavity technology is also used to broaden the light field distribution and reduce the light field energy density in the active region and the confinement layer. Although the problem of excessively high temperature in the cavity surface area can be solved to a certain extent, there are problems such as high technical difficulty and complex process.

[0004] To reduce the difficulty of forming a laser generator, the existing method for controlling the cavity surface temperature mainly involves preparing a third electrode at the cavity surface end. The third electrode can effectively form a depletion structure, maximally suppressing the heat generated by non-radiative recombination at the cavity surface, thereby improving the thermal stability of the laser generator. However, the third electrode requires the introduction of a non-current injection layer. The dielectric layer is a polycrystalline structure. The introduction of a non-current injection layer will cause cavity surface defects and exacerbate non-radiative recombination at the cavity surface end, resulting in overheating. This will cause the laser generator to easily crack and fall off during cleavage. This not only increases the cavity surface photon absorption loss, but also exacerbates the overheating problem caused by non-radiative recombination at the cavity surface, seriously affecting the effectiveness of the third electrode. Summary of the Invention

[0005] An embodiment of the present application provides a laser generator and a forming process thereof, which ensures the compatibility of the cleavage process by keeping the current non-injection layer away from the cavity surface, thereby improving the reliability of the laser generator and solving the technical problem of cavity surface defects caused by the introduction of the current non-injection layer, which affects the effect of the third electrode.

[0006] In a first aspect, an embodiment of the present application provides a laser generator, comprising:

[0007] A laser generating structure having a front end face and a rear end face, wherein the top of the laser generating structure has a ridge waveguide structure;

[0008] an antireflection film, disposed on the front end surface of the laser generating structure;

[0009] A reflective film is provided on the rear end surface of the laser generating structure;

[0010] A first electrode is provided at the bottom of the laser generating structure;

[0011] a second electrode disposed on the top of the ridge waveguide structure;

[0012] a current non-injection layer, disposed on top of the ridge waveguide structure and located on both sides of the second electrode close to the anti-reflection film and the reflective film, and spaced apart from the anti-reflection film and the reflective film;

[0013] The third electrode is disposed on the current non-injection layer.

[0014] In some embodiments, a deposition groove is opened on the top of the ridge waveguide structure, and the deposition groove is located on both sides of the second electrode close to the anti-reflection film and the reflective film and is separated from the end face of the ridge waveguide structure, and the current non-injection layer is deposited in the deposition groove.

[0015] In some embodiments, the tops of the anti-reflection film and the reflective film extend to the front end face and the rear end face of the ridge waveguide structure respectively, and a partition wall is formed between the deposition groove and the anti-reflection film and the reflective film, and the partition wall separates the current non-injection layer and the anti-reflection film and the reflective film.

[0016] In some embodiments, a first step is formed on the front and rear faces of the ridge waveguide structure, the antireflection film and the reflective film extend to the bottom of the first step, and the current non-injection layer is located on a side of the first step close to the second electrode.

[0017] In some embodiments, a second step is formed on the top surface of the ridge waveguide structure. The second step is located on a side of the first step close to the second electrode. The current non-injection layer is deposited on the second step.

[0018] In some embodiments, a top portion of the first step extends to the top surface of the ridge waveguide structure and connects with the second step.

[0019] In some embodiments, the laser generating structure further has an upper confinement layer located at the bottom of the ridge waveguide structure, and the bottom of the first step extends to the upper confinement layer.

[0020] In a second aspect, a laser generator forming process comprises the following steps:

[0021] forming an epitaxial structure having a ridge waveguide layer by epitaxial growth;

[0022] Obtaining a laser generating structure having a ridge waveguide structure by etching the ridge waveguide layer of the epitaxial structure;

[0023] depositing a current non-injection layer on top of the ridge waveguide structure;

[0024] forming an antireflection film spaced apart from the current non-injection layer on the front end face of the laser generating structure, and forming a reflective film spaced apart from the current non-injection layer on the rear end face of the laser generating structure;

[0025] A first electrode is formed on the bottom of the laser generating structure, a second electrode is formed on the top of the ridge waveguide structure, and a third electrode is formed on the current non-injection layer.

[0026] In some embodiments, the laser generator forming process further comprises: before depositing the current non-injection layer on the top of the ridge waveguide structure, etching a deposition groove spaced apart from an end face of the ridge waveguide structure on the top of the ridge waveguide structure;

[0027] Depositing a current non-injection layer on top of the ridge waveguide structure comprises:

[0028] A current non-injection layer is deposited in the deposition tank.

[0029] In some embodiments, the laser generator forming process further comprises: before depositing the current non-injection layer on the top of the ridge waveguide structure, etching a first step extending to the top surface of the ridge waveguide structure on the front and rear facets of the ridge waveguide structure, and etching a second step connected to the first step on the top surface of the ridge waveguide structure;

[0030] Depositing a current non-injection layer on top of the ridge waveguide structure comprises:

[0031] A current non-injection layer is deposited on the second step.

[0032] The laser generator provided in the embodiment of the present application includes a laser generating structure, an anti-reflection film, a reflective film, a first electrode and a second electrode. The laser generating structure has a ridge waveguide structure on the top, which can limit the light field, thereby limiting the propagation range of the laser. The anti-reflection film and the reflective film are respectively arranged on the front end face and the rear end face of the laser generating structure, and a resonant cavity is formed between the anti-reflection film and the reflective film. The first electrode and the second electrode are respectively arranged at the bottom of the laser generating structure and the top of the ridge waveguide structure. A forward bias voltage can be applied to the laser generating structure to form a light field of the laser generating structure. The light field is enhanced in the resonant cavity and finally emitted from the anti-reflection film to form a high-intensity laser.

[0033] Since the laser generator is also provided with a current non-injection layer and a third electrode, the current non-injection layer is arranged on the top of the ridge waveguide structure and is located on both sides of the second electrode close to the anti-reflection film and the reflective film, and the third electrode is arranged on the current non-injection layer, the third electrode and the current non-injection layer can significantly reduce the heat generated by non-radiative recombination of the cavity surface of the resonant cavity, thereby improving the thermal stability of the laser generator. Moreover, since the current non-injection layer is separated from the anti-reflection film and the reflective film, it can be far away from the cavity surface of the resonant cavity. Therefore, while ensuring the effect of the third electrode, it can effectively avoid the current non-injection layer from introducing cavity surface defects, thereby significantly improving the stability of the laser generator. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0035] Figure 1 This is a schematic diagram of the structure of the laser generator provided in the present application for depositing the current non-injection layer in the deposition tank;

[0036] Figure 2 This is a schematic structural diagram of a laser generator provided in this application in which the current non-injection layer is deposited on the second step;

[0037] Figure 3 A process flow chart of the laser generator provided for this application;

[0038] Figure 4 A schematic diagram of the structure formed by process step A1 provided in this application;

[0039] Figure 5 A schematic diagram of the structure formed by process step A2 provided in this application;

[0040] Figure 6 A schematic diagram of the structure formed by process step A3 provided in this application;

[0041] Figure 7 A schematic diagram of the structure formed by process step A4 provided in this application;

[0042] Figure 8 A schematic diagram of the structure formed by process step A5 provided in this application;

[0043] Figure 9 A schematic diagram of the structure formed by process step A6 provided in this application;

[0044] Figure 10 A schematic diagram of the structure formed by process step A7 provided in this application;

[0045] Figure 11 A schematic diagram of the structure formed by process step A9 provided in this application;

[0046] Figure 12 A schematic diagram of the structure formed by process step B1 provided in this application;

[0047] Figure 13 A schematic diagram of the structure formed by process step B2 provided in this application;

[0048] Figure 14 A schematic diagram of the structure formed by process step B3 provided in this application;

[0049] Figure 15 A schematic diagram of the structure formed by process step B4 provided in this application;

[0050] Figure 16 A schematic diagram of the structure formed by process step B5 provided in this application;

[0051] Figure 17 A schematic diagram of the structure formed by process step B6 provided in this application;

[0052] Figure 18 A schematic diagram of the structure formed by process step B7 provided in this application;

[0053] Figure 19 A schematic diagram of the structure formed by process step B8 provided in this application;

[0054] Figure 20 This is a schematic diagram of the structure formed by process step B10 provided in this application.

[0055] Reference numerals:

[0056] 10—laser generating structure; 10a—front facet; 10b—rear facet; 11—substrate layer; 12—lower confinement layer; 13—lower waveguide layer; 14—quantum well active layer; 15—upper waveguide layer; 16—upper confinement layer; 17—ridge waveguide structure; 171—deposition groove; 172—second step; 173—first step;

[0057] 20—antireflection film; 30—reflection film; 40—second electrode; 50—first electrode; 60—current non-injection layer; 70—third electrode; 80—epitaxial structure; 81—ridge waveguide layer; a—first mask; b—second mask.

[0058] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0059] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0060] As the output power of the laser generator increases, the cavity surface temperature of the semiconductor laser generator will rise sharply, causing the cavity surface to melt and recrystallize, resulting in a large number of lattice defects. In order to suppress the temperature of the cavity surface area of ​​a high-power semiconductor laser generator, the relevant technology mainly prepares a third electrode at the cavity surface end. The third electrode can form a depletion structure well, maximizing the suppression of the heat generated by non-radiative recombination of the cavity surface. However, the third electrode needs to introduce a current non-injection layer. When introducing the current non-injection layer, it is necessary to etch the cavity surface end of the laser generating structure, and then form the current non-injection layer through a deposition process. During the etching process, cavity surface etching defects are inevitably introduced, causing the cavity surface to overheat. Moreover, the deposited current non-injection layer will be located at the cavity surface end. Since the current non-injection layer is a polycrystalline material, it does not have the same cleavage plane as the cavity surface end of the laser generating structure. Therefore, during the cleavage process of the cavity surface end of the laser generating structure, it is easy to cause the current non-injection layer to collapse and fall off.

[0061] In combination with the above scenario, it can be seen that in the related technology, the technical means of suppressing the cavity surface temperature by introducing a third electrode has a technical problem that the cavity surface defects are caused by the introduction of a current non-injection layer by the third electrode, which affects the effect of the third electrode.

[0062] In order to solve the technical problem that the non-current injection layer causes cavity surface defects and affects the effect of the third electrode, the laser generator and its forming process provided in this application solve the technical problem of cavity surface defects caused by the non-current injection layer by technical means of keeping the non-current injection layer away from the cavity surface, thereby avoiding cavity surface defects and ensuring the compatibility of the cleavage process, thereby solving the technical problem of cavity surface defects caused by the non-current injection layer.

[0063] The following specific embodiments describe in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0064] In order to better understand this application, Figures 1 to 20 The technical solution of this application is described in detail:

[0065] The laser generator provided in the embodiment of the present application is as follows: Figure 1 and Figure 2 As shown, the laser generating structure 10 includes a laser generating structure 10, which is used to generate laser light through electric current. The laser generating structure 10 has a front face 10a and a rear face 10b. The front face 10a and the rear face 10b of the laser generating structure 10 are perpendicular to the propagation direction of photons in the laser generating structure 10. The laser generating structure 10 is provided with an active region and a waveguide structure. The active region is the core area for photon generation and amplification. By injecting current, electrons and holes recombine here to generate photons. The waveguide structure is used to limit the propagation of photons in the lateral direction, reduce light leakage, and improve beam quality and output power.

[0066] The laser generator provided in the embodiment of the present application also includes an anti-reflection film 20, a reflective film 30, a first electrode 50, a second electrode 40, a current non-injection layer 60 and a third electrode 70. The laser generating structure 10 has a ridge waveguide structure 17 on the top, the anti-reflection film 20 is arranged on the front end face 10a of the laser generating structure 10, the reflective film 30 is arranged on the rear end face 10b of the laser generating structure 10, the first electrode 50 is arranged at the bottom of the laser generating structure 10, the second electrode 40 is arranged on the top of the ridge waveguide structure 17, the current non-injection layer 60 is arranged on the top of the ridge waveguide structure 17 and is located on both sides of the second electrode 40 close to the anti-reflection film 20 and the reflective film 30, and is spaced apart from the anti-reflection film 20 and the reflective film 30, and the third electrode 70 is arranged on the current non-injection layer 60.

[0067] Specifically, the laser generator passes through a laser generating structure 10, an anti-reflection film 20, a reflective film 30, a first electrode 50 and a second electrode 40. The laser generating structure 10 has a ridge waveguide structure 17 on the top. The ridge waveguide structure 17 can limit the light field, thereby limiting the propagation range of the laser. The anti-reflection film 20 and the reflective film 30 are respectively arranged on the front end face 10a and the rear end face 10b of the laser generating structure 10. A resonant cavity is formed between the anti-reflection film 20 and the reflective film 30. The front end face 10a and the rear end face 10b of the laser generating structure 10 form the cavity surface of the resonant cavity. The front and rear ends of the laser generating structure 10 are the cavity surface ends of the resonant cavity.

[0068] The first electrode 50 and the second electrode 40 are respectively arranged at the bottom of the laser generating structure 10 and the top of the ridge waveguide structure 17, and a forward bias voltage can be applied to the laser generating structure 10. After the current is passed into the active area of ​​the laser generating structure 10, the electrons and holes are recombined in the active area to generate photons. The photons oscillate repeatedly in the resonant cavity and are continuously amplified to form a light field. The light field is enhanced in the resonant cavity and finally emitted from the anti-reflection film 20 to form a high-intensity laser.

[0069] Since the laser generator is also provided with a current non-injection layer 60 and a third electrode 70, the current non-injection layer 60 is provided on the top of the ridge waveguide structure 17 and is located on both sides of the second electrode 40 close to the anti-reflection film 20 and the reflective film 30, and the third electrode 70 is provided on the current non-injection layer 60. The third electrode 70 applies a forward bias to the current non-injection layer 60 to block carriers from being injected into the cavity surface of the resonant cavity, so that the carrier concentration at the cavity surface is reduced, the non-radiative recombination is reduced, and the heat generation at the cavity surface is reduced, thereby achieving the effect of reducing the heat generated by the non-radiative recombination of the cavity surface of the resonant cavity, thereby improving the thermal stability of the laser generator.

[0070] This embodiment spaced the non-current injection layer 60 from the anti-reflection film 20 and the reflective film 30, thereby allowing the non-current injection layer 60 to be away from the cavity facets of the resonant cavity. Consequently, during the deposition of the non-current injection layer 60, there is no need to etch the cavity facet ends of the resonant cavity, thereby preventing etching defects from forming at the cavity facet ends and introducing cavity facet defects. Furthermore, the non-current injection layer 60 does not act as a cleavage plane, preventing the cleavage plane from collapsing and falling off, and thus preventing defects in the cleavage plane structure. While ensuring the effectiveness of the third electrode 70, the non-current injection layer 60 can be effectively prevented from introducing cavity facet defects, significantly improving the stability of the laser generator.

[0071] In some embodiments, as Figure 1 and Figure 2 As shown, the laser generating structure 10 includes a substrate layer 11, a lower confinement layer 12, a lower waveguide layer 13, a quantum well active layer 14, an upper waveguide layer 15, an upper confinement layer 16 and a ridge waveguide structure 17 arranged in sequence.

[0072] Specifically, the substrate layer 11 serves as the foundation of the entire laser generating structure 10. The quantum well active layer 14 can effectively capture electrons and holes, improve the recombination efficiency of carriers, and thus generate more photons. It is the core area of ​​photon generation, where electrons and holes recombine to generate photons. The lower confinement layer 12 limits the vertical expansion of photons and carriers, ensuring that photons and carriers are concentrated in the quantum well active layer 14. The lower waveguide layer 13 has a lower refractive index, forming a refractive index difference with the lower confinement layer 12, to further guide the propagation of photons in the quantum well active layer 14 and reduce light leakage. The upper waveguide layer 15 is similar to the lower waveguide layer 13 and has a lower refractive index. It forms a refractive index difference with the upper confinement layer 16, further guiding the propagation of photons and reducing light leakage. The upper confinement layer 16 has a higher refractive index, which limits the vertical expansion of photons and carriers and ensures that photons and carriers are concentrated in the quantum well active layer 14.

[0073] It can be understood that the materials and dimensions of the substrate layer 11 , the lower confinement layer 12 , the lower waveguide layer 13 , the quantum well active layer 14 , the upper waveguide layer 15 , the upper confinement layer 16 and the ridge waveguide structure 17 can be adaptively set according to actual needs.

[0074] The substrate layer 11 needs to have good crystal quality and low defect density. In some embodiments, the substrate layer 11 is GaN (gallium nitride) or GaAs (gallium arsenide), and its thickness is between 200 nm and 3000 nm. For example, the thickness of the substrate layer 11 can be 200 nm, 3000 nm, or any value between 200 nm and 3000 nm, such as 500 nm, 1000 nm, and 2000 nm.

[0075] In some embodiments, the material of the lower confinement layer 12 can be AlInGaN (aluminum indium gallium nitride) or AlGaAs (aluminum gallium arsenide), and its thickness is between 0.3-1 μm. For example, the thickness of the lower confinement layer 12 can be 0.3 μm, 1 μm, and any value between 0.3-1 μm, such as 0.5 μm, 0.7 μm, and 0.9 μm.

[0076] In some embodiments, the lower waveguide layer 13 is made of AlInGaN (aluminum indium gallium nitride) or AlGaAs (aluminum gallium arsenide), and has a thickness between 0.1 and 3 μm. For example, the thickness of the lower waveguide layer 13 can be 0.1 μm, 3 μm, or any value between 0.1 and 3 μm, such as 0.2 μm, 2 μm, and 2.5 μm.

[0077] In some embodiments, the material of the quantum well active layer 14 is an alternately grown AlInGaN (aluminum indium gallium nitride) well layer-AlInGaN (aluminum indium gallium nitride) barrier layer, or an alternately grown InGaAs (indium gallium arsenide) well layer AlGaAs (aluminum gallium arsenide) barrier layer, and its thickness is between 0.02-0.5 μm. For example, the thickness of the quantum well active layer 14 can be 0.02 μm, 0.5 μm, and any value between 0.02-0.5 μm, such as 0.1 μm, 0.25 μm, and 0.4 μm.

[0078] In some embodiments, the upper waveguide layer 15 is made of AlInGaN (aluminum indium gallium nitride) or AlGaAs (aluminum gallium arsenide), and has a thickness between 0.1 and 3 μm. For example, the thickness of the lower waveguide layer 13 can be 0.1 μm, 3 μm, or any value between 0.1 and 3 μm, such as 0.21 μm, 1.2 μm, and 2.5 μm.

[0079] In some embodiments, the upper confinement layer 16 is made of AlInGaN (aluminum indium gallium nitride) or AlGaAs (aluminum gallium arsenide), and its thickness is between 0.3 and 1 μm. For example, the thickness of the upper confinement layer 16 can be 0.3 μm, 1 μm, and any value between 0.3 and 1 μm, such as 0.4 μm, 0.6 μm, and 0.9 μm.

[0080] In this embodiment, the ridge waveguide structure 17 limits the expansion of the light field in the lateral direction, reduces light leakage, and improves the output quality and output power of the light beam. In some embodiments, the material of the ridge waveguide structure 17 is AlInGaN (aluminum indium gallium nitride) or AlGaAs (aluminum gallium arsenide), and the thickness is between 250 nm and 350 nm. For example, the thickness of the ridge waveguide structure 17 can be 250 nm, 350 nm, and any value between 250 nm and 350 nm, such as 208 nm and 300 nm.

[0081] In some embodiments, the laser generating structure 10 further includes a passivation layer (not shown in the figure). The passivation layer is disposed on the periphery of the ridge waveguide structure 17. The passivation layer can isolate substances such as water vapor, oxygen, and corrosive gases (such as hydrogen sulfide). The material and size of the passivation layer can be adaptively set according to actual needs. It is mainly used to prevent the surface of the ridge waveguide structure 17 from mechanical damage, scratches, or contamination. In some embodiments, the passivation layer is made of materials such as silicon dioxide (SiO2), silicon nitride (Si3N4), and aluminum oxide (Al2O3). The thickness of the passivation layer is between 10 nm and 500 nm. For example, the thickness of the passivation layer can be 10 nm, 500 nm, or any value between 100 nm and 500 nm, such as 100 nm and 400 nm.

[0082] As will be appreciated, the antireflection film 20 is primarily used to reduce surface reflection, improve transmittance, and lower cavity surface loss. It can be made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), or titanium dioxide (TiO2). Its transmittance and size can be adaptively set based on the size of the laser generating structure 10 and actual needs. It only needs to allow laser emission and form a gap with the current non-injection layer 60. In some embodiments, the transmittance of the antireflection film 20 is less than 10%.

[0083] As will be appreciated, the reflective film 30 is primarily used to form a highly reflective mirror, enabling optical feedback and maintaining laser oscillation. It is a multilayer dielectric film, which can be made of materials such as a combination of silicon dioxide (SiO2) and titanium dioxide (TiO2), a combination of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5), or a combination of silicon dioxide (SiO2) and hafnium dioxide (HfO2). Its transmittance and size can be adaptively configured based on the size of the laser generating structure 10 and actual needs. It only needs to be able to efficiently reflect photons and form a gap with the non-current injection layer 60. In some embodiments, the transmittance of the anti-reflection film 20 is greater than 50%.

[0084] In this embodiment, the first electrode 50 and the second electrode 40 are core structures for current injection. The first electrode 50 and the second electrode 40 are respectively connected to the P-type region and the N-type region of the chip to realize carrier injection so that the laser generating structure generates laser.

[0085] In some embodiments, the first electrode 50 is a negative electrode plate, which is the outflow end of the current and can be made of metals such as titanium (Ti), aluminum (Al) or gold (Au). The second electrode 40 is a positive electrode plate, which is the injection end of the current and can be made of metals such as titanium (Ti), platinum (Pt) or gold (Au).

[0086] As will be appreciated, the non-current injection layer 60 is an insulating dielectric, which may be aluminum oxide (Al2O3), silicon nitride (SiN), or silicon dioxide (SiO2). The non-current injection layer 60 is formed on the top surface of the ridge waveguide structure 17 through a deposition process. Its surface is flush with the top surface of the ridge waveguide structure 17, and its thickness should be less than that of the ridge waveguide structure 17. In some embodiments, the thickness of the non-current injection layer 60 ranges from 10 nm to 50 nm. For example, the thickness of the non-current injection layer 60 may be 10 nm, 20 nm, 25 nm, or 50 nm.

[0087] In order to space the current non-injection layer 60 from the anti-reflection film 20 and the reflective film 30, in some embodiments, as shown in FIG. Figure 1 As shown, a deposition groove 171 is opened on the top of the ridge waveguide structure 17. The deposition groove 171 is located on both sides of the second electrode 40 close to the anti-reflection film 20 and the reflective film 30 and is separated from the end face of the ridge waveguide structure 17. The current non-injection layer 60 is deposited in the deposition groove 171. Specifically, the current non-injection layer 60 is formed on the top of the ridge waveguide structure 17 by being deposited in the deposition groove 171. Since the deposition groove 171 is arranged on the top surface of the ridge waveguide structure 17 and is separated from the end face of the ridge waveguide structure 17, during the forming process of the deposition groove 171, only the top surface of the ridge waveguide structure 17 needs to be etched, and the end face of the ridge waveguide structure 17 will not be etched. As part of the cavity surface, the end face will not form defects due to the etching of the deposition groove 171, so the cavity surface defects will not be caused by the deposition of the current non-injection layer 60, and the current non-injection layer 60 will be away from the end face of the ridge waveguide structure 17, and then the end face of the current non-injection layer 60 will be away from the cleavage surface, so that the cleavage surface defects will not be caused by the cleavage process.

[0088] In order to reduce the difficulty of forming the antireflection film 20 and the reflective film 30 and to increase the power of the laser generator, in some embodiments, as Figure 1As shown, the tops of the anti-reflection film 20 and the reflective film 30 extend to the front and rear facets of the ridge waveguide structure 17, respectively. A partition wall is formed between the deposition groove 171 and the anti-reflection film 20 and the reflective film 30. The partition wall separates the current non-injection layer 60 from the anti-reflection film 20 and the reflective film 30. Specifically, since the current injection layer is away from the front and rear facets of the ridge waveguide structure 17, by extending the anti-reflection film 20 and the reflective film 30 to the front and rear facets of the ridge waveguide structure 17, the integrity of the cavity surface can be ensured, the power of the laser generator can be improved, and the anti-reflection film 20 and the reflective film 30 can always be separated from the current non-injection layer 60 by the partition wall.

[0089] In order to space the current non-injection layer 60 from the anti-reflection film 20 and the reflective film 30, in some embodiments, as shown in FIG. Figure 2 As shown, the front and rear facets of the ridge waveguide structure 17 are provided with first steps 173, the anti-reflection film 20 and the reflective film 30 extend to the bottom of the first step 173, and the current non-injection layer 60 is located on the side of the first step 173 close to the second electrode 40. Specifically, only the portions of the front and rear facets 10a, 10b of the laser generating structure 10 below the first step 173 serve as the cavity facets and cleavage facets, while the current non-injection layer 60 is deposited on the top surface of the ridge waveguide structure 17, thereby forming a gap with the cavity facets and the cleavage facets through the first step 173. This keeps the current non-injection layer 60 away from the cavity facets and the cleavage facets, thereby avoiding cavity facet defects caused by the deposition of the current non-injection layer 60 and cleavage facet collapse during the cleavage process.

[0090] In some embodiments, as Figure 2 As shown, a second step 172 is defined on the top surface of the ridge waveguide structure 17. The second step 172 is located on the side of the first step 173 close to the second electrode 40, and the current non-injection layer 60 is deposited on the second step 172. Specifically, the second step 172 allows for the deposition of the current non-injection layer 60, thereby forming the current non-injection layer 60 on the top of the ridge waveguide structure 17 away from the cavity surface. Because the second step 172 is separated from the cavity by the first step 173, no cavity surface defects are caused during the etching process of the second step 172.

[0091] In some embodiments, as Figure 2 As shown, the top of the first step 173 extends to the top surface of the ridge waveguide structure 17 and connects with the second step 172. Specifically, since the first step 173 and the second step 172 are connected, during the etching process of the first step 173 and the second step 172, the second step 172 extending to the end surface of the ridge waveguide structure 17 can be etched first, and then the edge of the second step 172 can be etched downward to form the first step 173, effectively simplifying the etching process of the first step 173 and the second step 172.

[0092] In some embodiments, as Figure 2As shown, the laser generating structure 10 further includes an upper confinement layer 16 located at the bottom of the ridge waveguide structure 17, and the bottom of the first step 173 extends to the upper confinement layer 16. Specifically, the first step 173 extends to the bottom of the upper confinement layer 16, so that the front and rear facets of the substrate layer 11, the lower confinement layer 12, the lower waveguide layer 13, the quantum well active layer 14, and the upper waveguide layer 15 located below the upper confinement layer 16 will form cavity facets, while the front and rear facets of the ridge waveguide structure 17 do not form cavity facets, thereby reducing the risk of end face damage of the ridge waveguide structure 17 and reducing cavity facet defects, thereby suppressing cavity facet overheating.

[0093] In this embodiment, the third electrode 70 is configured as a positive plate. A positive voltage is applied to the third electrode 70 to repel carriers away from the cavity surface, thereby reducing heat generated by non-radiative recombination and light absorption at the cavity surface. The third electrode 70 can be made of a metal such as titanium (Ti), aluminum (Al), or gold (Au).

[0094] The present application also provides a laser generator forming process, such as Figure 3 As shown, the following steps are included:

[0095] S100: forming an epitaxial structure 80 having a ridge waveguide layer 81 by epitaxial growth;

[0096] S200: Obtaining a laser generating structure 10 having a ridge waveguide structure 17 by etching the ridge waveguide layer 81 of the epitaxial structure 80;

[0097] S300: depositing a current non-injection layer 60 on the top of the ridge waveguide structure 17;

[0098] S400: forming an antireflection film 20 spaced apart from the current non-injection layer 60 on the front end face 10a of the laser generating structure 10, and forming a reflective film 30 spaced apart from the current non-injection layer 60 on the rear end face 10b of the laser generating structure 10;

[0099] S500 : forming a first electrode 50 on the bottom of the laser generating structure 10 , forming a second electrode 40 on the top of the ridge waveguide structure 17 , and forming a third electrode 70 on the current non-injection layer 60 .

[0100] Specifically, through the above process, a current non-injection layer 60 separated from the anti-reflection film 20 and the reflective film 30 can be formed, which can effectively prevent the current non-injection layer 60 from introducing cavity surface defects and significantly improve the stability of the laser generator.

[0101] In some embodiments, the laser generator forming process further includes: before depositing the current non-injection layer 60 on the top of the ridge waveguide structure 17 , etching a deposition groove 171 spaced apart from the end surface of the ridge waveguide structure 17 on the top of the ridge waveguide structure 17 ;

[0102] A current non-injection layer 60 is deposited on top of the ridge waveguide structure 17, comprising:

[0103] The current non-injection layer 60 is deposited in the deposition tank 171 .

[0104] Specifically, through the above process, the current non-injection layer 60 away from the cavity surface can be deposited through the deposition groove 171 .

[0105] In some embodiments, the laser generator forming process further includes: before depositing the current non-injection layer 60 on the top of the ridge waveguide structure 17, etching a first step 173 extending to the top surface of the ridge waveguide structure 17 on the front and rear facets of the ridge waveguide structure 17, and etching a second step 172 on the top surface of the ridge waveguide structure 17 that connects to the first step 173;

[0106] A current non-injection layer 60 is deposited on top of the ridge waveguide structure 17, comprising:

[0107] The current non-injection layer 60 is deposited on the second step 172 .

[0108] Specifically, through the above process, the current non-injection layer 60 away from the cavity surface can be deposited through the second step 172 .

[0109] In this embodiment, the laser generator forming process includes a process A of depositing the non-current injection layer 60 through the deposition groove 171 , and a process B of depositing the non-current injection layer 60 through the second step 172 .

[0110] Process A of depositing the non-current injection layer 60 through the deposition tank 171 includes:

[0111] A1: If Figure 4 As shown, an epitaxial structure 80 having a ridge waveguide layer 81 is formed by epitaxial growth. The epitaxial structure 80 having a ridge waveguide layer 81 is formed by epitaxial growth, which includes placing a substrate in a growth chamber of a MOCVD (Metal-Organic Chemical Vapor Deposition) device, and sequentially growing a lower confinement layer 12, a lower waveguide layer 13, a quantum well active layer 14, an upper waveguide layer 15, an upper confinement layer 16 and the ridge waveguide layer 81.

[0112] A2: If Figure 5 As shown, the laser generating structure 10 having the ridge waveguide structure 17 is obtained by etching the ridge waveguide layer 81 of the epitaxial structure 80, and the etching process includes photolithography and dry etching.

[0113] A3: If Figure 6 As shown, a photoresist is coated on the top of the ridge waveguide structure 17 as a first mask a. The first mask a exposes the etched portion of the deposition groove 171 . The etched portion is spaced apart from the front and rear end surfaces of the ridge waveguide structure 17 .

[0114] A4: If Figure 7 As shown, a deposition groove 171 is etched in the etching portion by dry etching.

[0115] A5: If Figure 8 As shown, a current non-injection layer 60 matching the step depth is deposited on the deposition groove 171 .

[0116] A6: If Figure 9 As shown, the first mask a is removed.

[0117] A7: If Figure 10 As shown, the first electrode 50, the second electrode 40 and the third electrode 70 are manufactured by using photolithography technology and evaporation process.

[0118] A8: Deposit a passivation layer, and remove the passivation layer on the first electrode 50, the second electrode 40 and the third electrode 70 as well as the front end face 10a and the rear end face 10b of the laser generating structure 10 by photolithography technology and using an etching solution to expose the electrical injection window.

[0119] A9: If Figure 11 As shown, a reflective film 30 is plated on the rear end face 10b of the laser generating structure 10 by chemical plating, electroplating or the like, and an anti-reflection film 20 is plated on the front end face 10a of the laser generating structure 10, thereby obtaining a laser generator in which a current non-injection layer 60 is deposited on the deposition tank 171.

[0120] Process B of depositing the non-current injection layer 60 through the deposition tank 171 includes:

[0121] B1: If Figure 12 As shown, an epitaxial structure 80 having a ridge waveguide layer 81 is formed by epitaxial growth. The epitaxial structure 80 having a ridge waveguide layer 81 is formed by epitaxial growth, which includes placing a substrate in a growth chamber of a MOCVD (Metal-Organic Chemical Vapor Deposition) device, and sequentially growing a lower confinement layer 12, a lower waveguide layer 13, a quantum well active layer 14, an upper waveguide layer 15, an upper confinement layer 16 and the ridge waveguide layer 81.

[0122] B2: If Figure 13 As shown, the laser generating structure 10 having the ridge waveguide structure 17 is obtained by etching the ridge waveguide layer 81 of the epitaxial structure 80, and the etching process includes photolithography and dry etching.

[0123] B3: If Figure 14 As shown, a photoresist is coated on the top of the ridge waveguide structure 17 as a second mask b. The second mask b exposes the etched portion of the first step 173 , and the etched portion is connected to the front and rear end surfaces of the ridge waveguide structure 17 .

[0124] B4: If Figure 15 As shown, a second step 172 is etched in the etching portion by dry etching.

[0125] B5: If Figure 16 As shown, a first step 173 extending to the bottom of the upper confinement layer 16 is etched from the second step 172 by dry etching.

[0126] B6: If Figure 17 As shown, a current non-injection layer 60 is deposited on the second step 172 to match the step depth.

[0127] B7: If Figure 18 As shown, the second mask b is removed.

[0128] B8: If Figure 19 As shown, the first electrode 50, the second electrode 40 and the third electrode 70 are manufactured by using photolithography technology and evaporation process.

[0129] B9: Deposit a passivation layer, and remove the passivation layer on the first electrode 50, the second electrode 40 and the third electrode 70 as well as the front end face 10a and the rear end face 10b of the laser generating structure 10 by photolithography technology and using an etching solution to expose the electrical injection window.

[0130] B10: If Figure 20 As shown, a reflective film 30 is plated on the rear end face 10b of the laser generating structure 10 by chemical plating, electroplating or the like, and an anti-reflection film 20 is plated on the front end face 10a of the laser generating structure 10, thereby obtaining a laser generator with a current non-injection layer 60 deposited on the second step 172.

[0131] Finally, it should be noted that those skilled in the art will readily identify other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. The present invention is intended to cover any variations, uses, or adaptations of the present invention that follow the general principles of the present invention and include common knowledge or customary techniques in the art not disclosed herein. The present invention is not limited to the precise structure described above and illustrated in the accompanying drawings, and various modifications and variations may be made without departing from the scope thereof. The scope of the present invention is limited solely by the appended claims.

Claims

1. A laser generator, characterized in that: include: A laser generating structure having a front end face and a rear end face, wherein the top of the laser generating structure has a ridge waveguide structure; an antireflection film, disposed on the front end surface of the laser generating structure; A reflective film is provided on the rear end surface of the laser generating structure; A first electrode is provided at the bottom of the laser generating structure; a second electrode disposed on the top of the ridge waveguide structure; a current non-injection layer, disposed on top of the ridge waveguide structure and located on both sides of the second electrode close to the anti-reflection film and the reflective film, and spaced apart from the anti-reflection film and the reflective film; The third electrode is disposed on the current non-injection layer.

2. The laser generator according to claim 1, characterized in that A deposition groove is provided on the top of the ridge waveguide structure. The deposition groove is located on both sides of the second electrode close to the antireflection film and the reflective film and is spaced apart from the end face of the ridge waveguide structure. The current non-injection layer is deposited in the deposition groove.

3. The laser generator according to claim 2, characterized in that The tops of the antireflection film and the reflective film extend to the front end face and the rear end face of the ridge waveguide structure respectively, and a partition wall is formed between the deposition groove and the antireflection film and the reflective film, and the partition wall separates the current non-injection layer and the antireflection film and the reflective film.

4. The laser generator according to claim 1, characterized in that The front and rear faces of the ridge waveguide structure are provided with first steps, the antireflection film and the reflective film extend to the bottom of the first step, and the current non-injection layer is located on a side of the first step close to the second electrode.

5. The laser generator according to claim 4, characterized in that: A second step is formed on the top surface of the ridge waveguide structure. The second step is located on a side of the first step close to the second electrode. The current non-injection layer is deposited on the second step.

6. The laser generator according to claim 5, characterized in that: The top of the first step extends to the top surface of the ridge waveguide structure and connects with the second step.

7. The laser generator according to claim 4, characterized in that The laser generating structure further includes an upper confinement layer located at the bottom of the ridge waveguide structure, and the bottom of the first step extends to the upper confinement layer.

8. A laser generator forming process, characterized in that: The following steps are involved: forming an epitaxial structure having a ridge waveguide layer by epitaxial growth; Obtaining a laser generating structure having a ridge waveguide structure by etching the ridge waveguide layer of the epitaxial structure; depositing a current non-injection layer on top of the ridge waveguide structure; forming an antireflection film spaced apart from the current non-injection layer on the front end face of the laser generating structure, and forming a reflective film spaced apart from the current non-injection layer on the rear end face of the laser generating structure; A first electrode is formed on the bottom of the laser generating structure, a second electrode is formed on the top of the ridge waveguide structure, and a third electrode is formed on the current non-injection layer.

9. The laser generator forming process according to claim 8, characterized in that: The present invention also includes: before depositing the current non-injection layer on the top of the ridge waveguide structure, etching a deposition groove spaced apart from the end face of the ridge waveguide structure on the top of the ridge waveguide structure; A current non-injection layer is deposited on top of the ridge waveguide structure, comprising: A current non-injection layer is deposited in the deposition tank.

10. The laser generator forming process according to claim 8, characterized in that: Also includes: Before depositing the current non-injection layer on the top of the ridge waveguide structure, etching a first step extending to the top surface of the ridge waveguide structure on the front and rear facets of the ridge waveguide structure, and etching a second step connected to the first step on the top surface of the ridge waveguide structure; A current non-injection layer is deposited on top of the ridge waveguide structure, comprising: A current non-injection layer is deposited on the second step.

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