Intelligent control system of semiconductor single crystal furnace

Abstract

The invention relates to the field of semiconductor control, in particular to an intelligent control system of a semiconductor single crystal furnace, which comprises a data acquisition module used for measuring the liquid level and crystal in the single crystal furnace in real time and acquiring data of the surface smoothness and roughness of the crystal; the crystal analysis and evaluation module is used for collecting morphology and defect distribution data of the surface roughness of the crystal forming the roughness; and the crystal acquisition and prediction module is used for analyzing the collected defect distribution data. After single crystals in the inner container furnace are formed, a motor is matched to rotate a transmission rod, a transmission crawler belt and a limiting winding rod are driven to rotate, two groups of pull ropes are wound and locked on the surface of the limiting winding rod, and the pull ropes connected to the surface of a limiting ferrule can drive the limiting ferrule to swing; and when the other pull rope is wound and shortened, the sealing cover can be pulled out of the inner container furnace by pulling the sealing cover.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor control technology, specifically an intelligent control system for semiconductor single crystal furnaces. Background Technology

[0002] Semiconductors are used in fields such as consumer electronics, communication systems, photovoltaic power generation, lighting, and high-power power conversion. For example, devices made of semiconductors are very important from both a technological and economic development perspective. Most electronic products, such as computers, mobile phones, or digital recorders, have core components that are closely related to semiconductors. Silicon is the most influential of all semiconductor materials.

[0003] A patent with publication number CN219157039U discloses a semiconductor material crystallization furnace, including a crystallization furnace body, a control valve at the top of the crystallization furnace body, a feeding funnel at the top of the control valve, a stirring device at the top of the feeding funnel, a screening device at the top of the stirring device, a stirring roller on the inner side of the screening device, a crystallization furnace top cover at the top of the crystallization furnace body, an installation hole at the top of the crystallization furnace top cover, an installation base at the top of the crystallization furnace top cover, a heating device on the inner side of the crystallization furnace body, a valve body switch at the front end of the control valve, a valve body blocking device on the inner side of the control valve, a feeding port at the top of the feeding funnel, and a feeding pipe at the bottom end of the feeding funnel. This utility model, by incorporating a screening device and a stirring device, can screen out larger particles before crystallization in the semiconductor material crystallization furnace, thereby improving the working efficiency of the crystallization furnace during the crystallization process.

[0004] Currently, existing crystal growth control systems lack methods for evaluating crystal growth. Single crystal furnaces struggle to accurately assess the crystal lattice structure and defect distribution, resulting in an inability to timely understand and control the crystal's structure and properties, such as lattice type, crystal orientation, defect type, and defect distribution. Furthermore, the crystallization process at different stages affects the subsequent degree of crystallization, making it impossible to perform preliminary control over crystallization during the current crystallization process.

[0005] Therefore, the present invention provides an intelligent control system for semiconductor single crystal furnaces. Summary of the Invention

[0006] In order to overcome the shortcomings of the prior art, at least one technical problem raised in the background art is solved.

[0007] The technical solution adopted by this invention to solve its technical problem is: the intelligent control system for semiconductor single crystal furnace of this invention includes: The data acquisition module is used to measure the liquid level and crystal inside the single crystal furnace in real time, and to collect data on the smoothness and roughness of the crystal surface. The crystal analysis and evaluation module is used to collect data on the morphology and defect distribution of surface roughness in crystals that form roughness. The crystal acquisition and prediction module is used to analyze the collected defect distribution data, build mathematical models through machines, and predict and process the subsequent growth of the crystal. The growth quality detection module is used to analyze and process the collected data, compare the analyzed data with the preset target data, and predict the subsequent crystal growth quality. The parameter adjustment module is used to intelligently and dynamically adjust the parameters inside the single crystal furnace based on the current predicted crystal growth data. The constant temperature control module is used to intelligently and dynamically adjust the temperature inside the single crystal furnace, and then intelligently process the temperature changes of the single crystal furnace. The parameter adjustment module includes a real-time data acquisition unit and a parameter optimization calculation unit. The real-time data acquisition unit is used to take pictures of the single crystal inside the single crystal furnace at different times using an industrial camera, and calibrate the current picture according to the 1.2...n sequence. While the industrial camera is taking pictures, it uses infrared light to measure the temperature of the single crystal and perform single crystal surface detection processing. It collects the current single crystal temperature and the detection data on the single crystal surface, and matches them one-to-one with the corresponding sequence. The parameter optimization calculation unit is used to analyze the detected single crystal and data, and to detect and control the temperature, stirring speed and sealing of the inside and outside of the single crystal furnace according to the corresponding sequence.

[0008] Preferably, the data acquisition module includes an infrared emitting unit and an infrared collecting unit. The infrared emitting unit is used to detect the liquid surface temperature inside the single crystal furnace, and the infrared collecting unit detects the shape, defect density, resistivity, and geometric dimensions of the crystal, thereby maintaining the stability of the liquid surface.

[0009] Preferably, the crystal analysis and evaluation module includes a crystal identification unit, a crystal defect detection unit, and a detection and evaluation unit. The crystal identification unit is used to perform overall crystal identification on the surface morphology of the crystal and to identify the crystal lattice type and crystal growth direction using mathematical model learning techniques.

[0010] Preferably, the crystal defect detection unit is used to detect defects in the roughness of the crystal surface and to detect the type and distribution of defects in the crystal using image processing technology.

[0011] Preferably, the detection and evaluation unit is used to evaluate the crystal lattice type and defect distribution of the crystal based on the detection results of the crystal identification unit and the defect detection unit.

[0012] Preferably, the crystal acquisition and prediction module includes a crystal morphology acquisition unit and a crystal growth prediction unit, wherein the crystal morphology acquisition unit is used to collect data on the crystallization process of the crystal.

[0013] Preferably, the crystal growth prediction unit performs operational analysis on the crystallization data of the crystal, and predicts the subsequent growth process and degree of crystallization of the crystal through the crystal growth prediction unit, and collects and stores the predicted data.

[0014] Preferably, the crystal data collected by the real-time data acquisition unit is systematically compared with the data pre-stored in the crystal growth prediction unit, and compared one by one with the corresponding sequence to check whether the crystal data collected by the real-time data acquisition unit is the same as the data in the crystal growth pre-stored unit. If they are different, the system returns to the crystal acquisition and prediction module to collect data for the current crystal growth process and perform secondary prediction processing based on the current crystallization process. If they are the same, the system proceeds to the next step, in which the single crystal inside the single crystal furnace is poured out by the lifting device.

[0015] Preferably, the lifting device includes an overlapping support plate, four sets of support frames are fixedly installed on the top surface of the overlapping support plate, motors are fixedly installed on the outer surfaces of two sets of support frames, two sets of transmission rods are fixedly connected to the output end of the motors and movably sleeved on the outer surfaces of the support frames, transmission tracks are movably sleeved on the outer surfaces of the two sets of transmission rods, a limiting winding rod is movably sleeved on the top outer surface of the support frame and disposed on the outer surface of the transmission track, two sets of tension ropes are movably sleeved on the outer surface of the limiting winding rod, a limiting collar is movably sleeved on the outer surfaces of the other two sets of support frames, and one end of the other set of tension ropes is fixedly connected to the bottom outer surface of the limiting collar.

[0016] Preferably, a crystallization furnace is provided on the inner wall of the limiting ring, an inner furnace is provided on the inner wall of the crystallization furnace, two sets of limiting rods are fixedly connected to the top surface of the crystallization furnace, a second limiting rod is movably sleeved on the top surface of the first limiting rod, the outer surface of the tension rope is movably overlapped on the outer surface of the second limiting rod, a sealing cover is movably sleeved on the inner wall of the inner furnace, a pull-out sliding arm is fixedly connected to the top surface of the sealing cover, both ends of the pull-out sliding arm are movably sleeved on the outer surface of the first limiting rod, and the other end of the tension rope is fixedly connected to the outer surface of the pull-out sliding arm.

[0017] The beneficial effects of the present invention are as follows: 1. The intelligent control system for semiconductor single crystal furnace of the present invention, after the single crystal is formed inside the inner furnace, the motor rotates the transmission rod, which in turn drives the transmission track and the limiting winding rod to rotate, and the two sets of tension ropes are wound and locked on the surface of the limiting winding rod. The tension rope connected to the surface of the limiting ring will drive the limiting ring to swing, thereby causing the limiting ring to flip and tilt. When the other tension rope is wound and shortened, it will pull the sealing cover out from the inside of the inner furnace, thereby extending the top of the inner furnace, so as to facilitate the single crystal inside the inner furnace to be guided and poured out. 2. The intelligent control system for semiconductor single crystal furnace described in this invention, when the sealing cover is pulled out from inside the inner furnace, is positioned by a pair of sliding arms with a limiting rod, so that the sealing cover and the inner furnace are always in an opposing state. When the limiting winding rod rotates, as long as the limiting ring is slightly tilted, the first limiting rod will be at an angle. The sliding arms in the tilted state will form an angle with the first limiting rod due to the tilt, thus preventing the sealing cover from retracting into the inner furnace in time. At this time, new crystallization raw materials can be poured into the inner furnace. After the limiting ring is in a completely vertical state, the sealing cover will slide vertically into the inner furnace under its own gravity. 3. The intelligent control system for semiconductor single crystal furnace described in this invention uses an industrial camera to take pictures of the single crystal inside the furnace at different times, and calibrates the current picture according to the 1.2...n sequence. While the industrial camera is taking pictures, infrared light is used to measure the temperature of the single crystal and detect the surface of the single crystal. The current single crystal temperature and the detection data on the single crystal surface are collected and matched one-to-one with the corresponding sequence. The parameter optimization calculation unit is used to analyze the detected single crystal and data, and to detect and control the temperature, stirring speed and sealing of the inside and outside of the single crystal furnace according to the corresponding sequence. Attached Figure Description

[0018] The invention will now be further described with reference to the accompanying drawings.

[0019] Figure 1 This is a flowchart illustrating the present invention; Figure 2 This is a perspective view of the overlapping support plate in this invention; Figure 3 This is a three-dimensional view of the oscillating crystallization furnace in this invention; Figure 4 This is a three-dimensional cross-sectional view of the oscillating crystallization furnace in this invention.

[0020] In the diagram: 11. Overlapping support plate; 111. Support frame; 112. Transmission rod; 113. Motor; 114. Limiting winding rod; 115. Transmission track; 116. Tension rope; 12. Limiting collar; 121. Crystallization furnace; 122. Inner furnace; 123. Sealing cover; 124. Limiting rod one; 125. Pull-out sliding arm; 126. Limiting rod two. Detailed Implementation

[0021] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0022] like Figure 1 As shown, the intelligent control system for a semiconductor single crystal furnace according to an embodiment of the present invention includes: The data acquisition module is used to measure the liquid level and crystal inside the single crystal furnace in real time, and to collect data on the smoothness and roughness of the crystal surface. The crystal analysis and evaluation module is used to collect data on the morphology and defect distribution of surface roughness in crystals that form roughness. The crystal acquisition and prediction module is used to analyze the collected defect distribution data, build mathematical models through machines, and predict and process the subsequent growth of the crystal. The growth quality detection module is used to analyze and process the collected data, compare the analyzed data with the preset target data, and predict the subsequent crystal growth quality. The parameter adjustment module is used to intelligently and dynamically adjust the parameters inside the single crystal furnace based on the current predicted crystal growth data. The constant temperature control module is used to intelligently and dynamically adjust the temperature inside the single crystal furnace, and then intelligently process the temperature changes of the single crystal furnace. The parameter adjustment module includes a real-time data acquisition unit and a parameter optimization calculation unit. The real-time data acquisition unit is used to take pictures of the single crystal inside the single crystal furnace at different times using an industrial camera, and calibrate the current picture according to the 1.2...n sequence. While the industrial camera is taking pictures, infrared light is used to measure the temperature of the single crystal and detect the surface of the single crystal. The current single crystal temperature and the detection data on the single crystal surface are collected and matched one-to-one with the corresponding sequence. The parameter optimization calculation unit is used to analyze the detected single crystal and data, and to detect and control the temperature, stirring speed and sealing of the inside and outside of the single crystal furnace according to the corresponding sequence.

[0023] like Figure 1As shown, the data acquisition module includes an infrared emitting unit and an infrared collecting unit. The infrared emitting unit is used to detect the liquid surface temperature inside the single crystal furnace, while the infrared collecting unit detects the crystal's shape, defect density, resistivity, and geometric dimensions to maintain liquid surface stability. The crystal analysis and evaluation module includes a crystal identification unit, a crystal defect detection unit, and a detection and evaluation unit. The crystal identification unit performs overall crystal identification by analyzing the surface morphology of the crystal, using mathematical model learning techniques to identify the crystal lattice type and growth direction. The crystal defect detection unit detects surface roughness defects by using image processing techniques to detect the defect type and distribution. The detection and evaluation unit evaluates the crystal lattice type and defect distribution based on the detection results from the crystal identification unit and the defect detection unit. The crystal acquisition and prediction module includes a crystal... The system consists of a morphology acquisition unit and a crystal growth prediction unit. The morphology acquisition unit collects data on the crystallization process, while the crystal growth prediction unit analyzes the crystallization data and predicts the subsequent growth process and degree of crystallization. The predicted data is then collected and stored. The crystal data acquired by the real-time data acquisition unit is systematically compared with the data stored in the crystal growth prediction unit, and compared one by one with the corresponding sequences to check whether the crystal data acquired by the real-time data acquisition unit is the same as the data in the crystal growth pre-storage unit. If they are different, the system returns to the crystal acquisition and prediction module to collect data on the current crystal growth process a second time and perform a second prediction process based on the current crystallization process. If they are the same, the system proceeds to the next step, where the single crystal inside the single crystal furnace is tilted out using a lifting device.

[0024] like Figures 2 to 4As shown, the lifting device includes an overlapping support plate 11. Four sets of support frames 111 are fixedly installed on the top surface of the overlapping support plate 11. Motors 113 are fixedly installed on the outer surfaces of two sets of support frames 111. Two sets of transmission rods 112 are fixedly connected to the output end of the motors 113 and movably sleeved on the outer surfaces of the support frames 111. A transmission track 115 is movably sleeved on the outer surfaces of the two sets of transmission rods 112. A limiting winding rod 114, which is provided on the outer surface of the transmission track 115, is movably sleeved on the top outer surface of the support frame 111. Two sets of tension ropes 116 are movably sleeved on the outer surface of the limiting winding rod 114. Limiting collars 12 are movably sleeved on the outer surfaces of the other two sets of support frames 111. One end of the other set of tension ropes 116 is fixed. A crystallization furnace 121 is fixedly connected to the bottom outer surface of the limiting sleeve 12. An inner furnace 122 is provided on the inner wall of the limiting sleeve 12. Two sets of limiting rods 124 are fixedly connected to the top surface of the crystallization furnace 121. A limiting rod 126 is movably sleeved on the top surface of the limiting rod 124. The outer surface of the tension rope 116 is movably overlapped on the outer surface of the limiting rod 126. A sealing cover 123 is movably sleeved on the inner wall of the inner furnace 122. A pull-out sliding arm 125 is fixedly connected to the top surface of the sealing cover 123. Both ends of the pull-out sliding arm 125 are movably sleeved on the outer surface of the limiting rod 124. The other end of the tension rope 116 is fixedly connected to the outer surface of the pull-out sliding arm 125.

[0025] After the single crystal inside the inner furnace 122 is formed, the motor 113 rotates the transmission rod 112, which in turn drives the transmission track 115 and the limiting winding rod 114 to rotate. This causes the two sets of tension ropes 116 to be wound and locked on the surface of the limiting winding rod 114. The tension ropes 116 connected to the surface of the limiting collar 12 will cause the limiting collar 12 to swing, thereby causing the limiting collar 12 to flip and tilt. When the other tension rope 116 is wound and shortened, it will pull the sealing cover 123 out from the inside of the inner furnace 122, thereby causing the top of the inner furnace 122 to extend out, so as to facilitate the single crystal inside the inner furnace 122 to be guided and poured out. After the sealing cover 123 is pulled out from inside the inner furnace 122, it works in conjunction with the limiting rod 124 to limit the position of the pull-out sliding arm 125, so that the sealing cover 123 and the inner furnace 122 are always in an opposing state. When the limiting winding rod 114 rotates, as long as the limiting ring 12 is in a slightly tilted state, the limiting rod 124 will be in a tilted angle. The pull-out sliding arm 125 in the tilted state will form an angle with the limiting rod 124 due to the tilt, which makes it impossible for the sealing cover 123 to retract into the inner furnace 122 in time. At this time, new crystallization raw materials can be poured into the inner furnace 122. After the limiting ring 12 is in a completely vertical state, the sealing cover 123 will slide vertically into the inner furnace 122 under its own gravity.

[0026] Working principle: After the single crystal is formed inside the inner furnace 122, the motor 113 rotates the transmission rod 112, which in turn drives the transmission track 115 and the limiting winding rod 114 to rotate. This causes the two sets of tension ropes 116 to wind and lock on the surface of the limiting winding rod 114. The tension ropes 116 connected to the surface of the limiting collar 12 will drive the limiting collar 12 to swing, thereby causing the limiting collar 12 to flip and tilt. When the other tension rope 116 is wound and shortened, it will pull the sealing cover 123 out from the inside of the inner furnace 122, thereby extending the top of the inner furnace 122 to facilitate the single crystal inside the inner furnace 122 to be guided and poured out. After the sealing cover 123 is pulled out from inside the inner furnace 122, it works in conjunction with the limiting rod 124 to limit the position of the pull-out sliding arm 125, so that the sealing cover 123 and the inner furnace 122 are always in an opposing state. When the limiting winding rod 114 rotates, as long as the limiting ring 12 is in a slightly tilted state, the limiting rod 124 will be in a tilted angle. The pull-out sliding arm 125 in the tilted state will form an angle with the limiting rod 124 due to the tilt, which makes it impossible for the sealing cover 123 to retract into the inner furnace 122 in time. At this time, new crystallization raw materials can be poured into the inner furnace 122. After the limiting ring 12 is in a completely vertical state, the sealing cover 123 will slide vertically into the inner furnace 122 under its own gravity.

[0027] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. An intelligent control system for a semiconductor single crystal furnace, characterized in that: include: The data acquisition module is used to measure the liquid level and crystal inside the single crystal furnace in real time, and to collect data on the smoothness and roughness of the crystal surface. The crystal analysis and evaluation module is used to collect data on the morphology and defect distribution of surface roughness in crystals that form roughness. The crystal acquisition and prediction module is used to analyze the collected defect distribution data, build mathematical models through machines, and predict and process the subsequent growth of the crystal. The growth quality detection module is used to analyze and process the collected data, compare the analyzed data with the preset target data, and predict the subsequent crystal growth quality. The parameter adjustment module is used to intelligently and dynamically adjust the parameters inside the single crystal furnace based on the current predicted crystal growth data. The constant temperature control module is used to intelligently and dynamically adjust the temperature inside the single crystal furnace, and then intelligently process the temperature changes of the single crystal furnace. The parameter adjustment module includes a real-time data acquisition unit and a parameter optimization calculation unit. The real-time data acquisition unit is used to take pictures of the single crystal inside the single crystal furnace at different times using an industrial camera, and calibrate the current picture according to the 1.2...n sequence. While the industrial camera is taking pictures, it uses infrared light to measure the temperature of the single crystal and perform single crystal surface detection processing. It collects the current single crystal temperature and the detection data on the single crystal surface, and matches them one-to-one with the corresponding sequence. The parameter optimization calculation unit is used to analyze the detected single crystal and data, and to detect and control the temperature, stirring speed and sealing of the inside and outside of the single crystal furnace according to the corresponding sequence.

2. The intelligent control system for a semiconductor single crystal furnace according to claim 1, characterized in that: The data acquisition module includes an infrared emitting unit and an infrared collecting unit. The infrared emitting unit is used to detect the liquid surface temperature inside the single crystal furnace, and the infrared collecting unit detects the shape, defect density, resistivity and geometric dimensions of the crystal, thereby maintaining the stability of the liquid surface.

3. The intelligent control system for a semiconductor single crystal furnace according to claim 1, characterized in that: The crystal analysis and evaluation module includes a crystal identification unit, a crystal defect detection unit, and a detection and evaluation unit. The crystal identification unit is used to perform overall crystal identification on the surface morphology of the crystal and to identify the crystal lattice type and crystal growth direction using mathematical model learning technology.

4. The intelligent control system for a semiconductor single crystal furnace according to claim 3, characterized in that: The crystal defect detection unit is used to detect defects in the roughness of the crystal surface and to detect the type and distribution of defects in the crystal using image processing technology.

5. The intelligent control system for a semiconductor single crystal furnace according to claim 4, characterized in that: The detection and evaluation unit is used to evaluate the crystal lattice type and defect distribution of the crystal based on the detection results of the crystal identification unit and the defect detection unit.

6. The intelligent control system for a semiconductor single crystal furnace according to claim 1, characterized in that: The crystal acquisition and prediction module includes a crystal morphology acquisition unit and a crystal growth prediction unit. The crystal morphology acquisition unit is used to collect data on the crystallization process of the crystal.

7. The intelligent control system for a semiconductor single crystal furnace according to claim 6, characterized in that: The crystal growth prediction unit performs operational analysis on the crystallization data of the crystal, and predicts the subsequent growth process and degree of crystallization of the crystal through the crystal growth prediction unit, and collects and stores the predicted data.

8. The intelligent control system for a semiconductor single crystal furnace according to claim 7, characterized in that: The crystal data collected by the real-time data acquisition unit is systematically compared with the data pre-stored in the crystal growth prediction unit, and compared one by one with the corresponding sequence to check whether the crystal data collected by the real-time data acquisition unit is the same as the data in the crystal growth pre-stored unit. If they are different, the system returns to the crystal acquisition and prediction module to collect data for the current crystal growth process and perform secondary prediction processing based on the current crystallization process. If they are the same, the system proceeds to the next step, and the single crystal inside the single crystal furnace is poured out by the lifting device.

9. The intelligent control system for a semiconductor single crystal furnace according to claim 8, characterized in that: The lifting device includes an overlapping support plate (11). Four sets of support frames (111) are fixedly installed on the top surface of the overlapping support plate (11). Motors (113) are fixedly installed on the outer surfaces of two sets of support frames (111). Two sets of transmission rods (112) are fixedly connected to the output end of the motors (113) and are movably sleeved on the outer surfaces of the support frames (111). Transmission tracks (115) are movably sleeved on the outer surfaces of the two sets of transmission rods (112). A limiting winding rod (114) is movably sleeved on the top outer surface of the support frame (111) and is provided on the outer surface of the transmission track (115). Two sets of tension ropes (116) are movably sleeved on the outer surface of the limiting winding rod (114). A limiting collar (12) is movably sleeved on the outer surfaces of the other two sets of support frames (111). One end of the other set of tension ropes (116) is fixedly connected to the bottom outer surface of the limiting collar (12).

10. The intelligent control system for a semiconductor single crystal furnace according to claim 9, characterized in that: A crystallization furnace (121) is provided on the inner wall of the limiting ring (12), and an inner furnace (122) is provided on the inner wall of the crystallization furnace (121). Two sets of limiting rods (124) are fixedly connected to the top surface of the crystallization furnace (121). A limiting rod (126) is movably sleeved on the top surface of the limiting rod (124). The outer surface of the tension rope (116) is movably overlapped on the outer surface of the limiting rod (126). A sealing cover (123) is movably sleeved on the inner wall of the inner furnace (122). A pull-out sliding arm (125) is fixedly connected to the top surface of the sealing cover (123). Both ends of the pull-out sliding arm (125) are movably sleeved on the outer surface of the limiting rod (124), and the other end of the tension rope (116) is fixedly connected to the outer surface of the pull-out sliding arm (125).

Images